CN107210213B - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
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- CN107210213B CN107210213B CN201680005004.6A CN201680005004A CN107210213B CN 107210213 B CN107210213 B CN 107210213B CN 201680005004 A CN201680005004 A CN 201680005004A CN 107210213 B CN107210213 B CN 107210213B
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- 239000000758 substrate Substances 0.000 title claims abstract description 213
- 238000012545 processing Methods 0.000 title claims abstract description 63
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 191
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004140 cleaning Methods 0.000 claims description 28
- 239000011800 void material Substances 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 11
- 239000013618 particulate matter Substances 0.000 description 35
- 230000007246 mechanism Effects 0.000 description 29
- 230000008569 process Effects 0.000 description 16
- 239000000126 substance Substances 0.000 description 13
- 238000001035 drying Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000006870 function Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Abstract
Provided are a substrate processing method capable of satisfactorily removing particles and the like adhering to the upper surface of a substrate, and a substrate processing apparatus for performing the method. Sequentially executing: a pool forming step S3 of forming a liquid film F of a rinse liquid on the upper surface of the substrate W; a contacting step S4 of contacting the member 13 having the mesh member 134 formed with the plurality of voids 135 with the liquid film F; in the particle capturing step S5, the particle capturing step is performed to capture the particles on the side surface 134b of the mesh member 134 by generating convection in the liquid film F of the rinse liquid by using interfacial free energy generated at a three-phase boundary where the rinse liquid, the ambient gas a and the inner edge of the mesh member 134 of the member 13 intersect.
Description
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using a processing liquid. Examples of the substrate to be processed include a semiconductor substrate, a substrate for a liquid crystal display device, a substrate for a plasma display device, a substrate for an FED (field emission display), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical disk, and a substrate for a photomask. And more particularly, to a substrate cleaning technique for removing foreign substances adhering to the surface of a substrate.
Background
Generally, the substrate is cleaned in the following manner. First, a chemical solution such as SC1 is supplied to the surface of the rotating substrate so that the particles adhering to the surface of the substrate are dissolved or peeled off and detached (chemical solution supply step). Next, a rinse liquid such as pure water is supplied onto the surface of the substrate so that a liquid film of the rinse liquid is formed on the surface of the substrate, and the particles are dissolved in the liquid film of the rinse liquid (a rinse step). Finally, the substrate is rotated at a high speed, and a centrifugal force is applied to the liquid film of the rinse liquid, thereby removing the liquid film from the surface of the substrate. Thereby, the particles are removed from the surface of the substrate together with the rinse liquid (spin-drying process).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2003-209087
Disclosure of Invention
Problems to be solved by the invention
Fig. 7 is a schematic view of the surface of the substrate before the spin drying process is started. A convex circuit pattern W2 is formed on the upper surface W1 of the substrate W. The liquid film F of the rinse liquid is held on the upper surface W1. The liquid film F contains the particulate matter P released from the upper surface W1 of the substrate W.
Fig. 8 is a schematic view of the substrate W in the spin drying step. Since the centrifugal force acts on the upper region F2 of the liquid film, the liquid film is scattered and removed from the substrate W. However, the lower layer region F1 near the substrate rotates in the same direction and at substantially the same speed as the substrate W in conjunction with the substrate W. Therefore, the treatment liquid does not flow and remains in the lower layer region F1. As a result, the lower layer region F1 is not removed from the substrate, and the particulate matter P in the lower layer region F1 remains on the substrate W. Therefore, the substrate W cannot be cleaned with high accuracy.
An object of the present invention is to solve the above-described problems, and to provide a substrate processing method and a substrate processing apparatus capable of satisfactorily removing particles present in a liquid near a substrate.
Means for solving the problems
In order to solve the above problem, a substrate processing method of a first aspect includes:
a treatment liquid supply step of supplying a treatment liquid to one main surface of the substrate in a state where the substrate is supported so that the one main surface faces upward;
a liquid film holding step of holding a liquid film of a treatment liquid on the one main surface of the substrate;
and a contact step of bringing one surface of a member having one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings into contact with the upper surface of the liquid film.
A substrate processing method according to a second aspect, wherein in the substrate processing method according to the first aspect,
in the contacting step, two or more first openings among the plurality of first openings are in contact with the upper surface of the liquid film.
A substrate processing method according to a third aspect is the substrate processing method according to the first or second aspect,
in the contact step, the member is heated.
A substrate processing method according to a fourth aspect is the substrate processing method according to any one of the first to third aspects,
in the contacting step, the height position of the member is adjusted according to the thickness of the liquid film.
A substrate processing apparatus according to a fifth aspect includes:
a substrate support portion that supports the substrate such that a main surface thereof faces upward;
a processing liquid supply unit configured to supply a processing liquid to the one main surface of the substrate supported by the substrate support unit;
a member having one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings;
a member moving unit that moves the member;
and a control unit configured to control the treatment liquid supply unit to form a liquid film of the treatment liquid on the one main surface, and to control the member moving unit to bring one surface of the member into contact with an upper surface of the liquid film.
A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to the fifth aspect,
the member includes a flat plate provided with a plurality of through holes penetrating in a thickness direction.
A substrate processing apparatus according to a seventh aspect, wherein in the substrate processing apparatus according to the fifth aspect,
the member includes a mesh member having a plurality of void portions communicating in a thickness direction.
The substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to any one of the fifth to seventh aspects,
further comprises an applying unit for applying a voltage to the member,
the member includes a heat generating body that generates heat in response to application of a voltage.
A substrate processing apparatus according to a ninth aspect of the present invention is the substrate processing apparatus according to any one of the fifth to eighth aspects,
the component cleaning device further comprises a component cleaning part for cleaning the component.
In another aspect, a substrate processing method is performed in a predetermined atmosphere, wherein,
the method comprises the following steps:
a processing liquid supply step of supplying a processing liquid to an upper surface of a substrate in a state where the substrate is supported in a substantially horizontal state, and performing a predetermined substrate processing on the substrate;
a liquid film holding step of holding a liquid film of the treatment liquid on the upper surface of the substrate;
a plate contact step of bringing a plate having a plurality of through holes formed therein into contact with the liquid film.
According to this aspect, in the plate contact step, the plate is brought into contact with the liquid film. At this time, convection from the vicinity of the substrate to the liquid surface is formed by the interface free energy generated at the three-phase interface where the processing liquid, the ambient gas, and the inner edge of the through hole intersect. By this convection, the processing liquid near the substrate is moved to the surface of the liquid film and brought into contact with the inner edge of the through-hole. Thereby, the particulate matter in the treatment liquid is captured by the flat plate. In this way, the particulate matter in the vicinity of the substrate, which cannot be eliminated by the conventional spin drying, can be effectively removed.
A substrate processing method according to another aspect is characterized in that,
in the plate contact step, the plate is brought into contact with the liquid film of the treatment liquid so that three-phase interfaces where the treatment liquid, the ambient gas, and the inner edge of the through hole intersect with each other are generated at a plurality of portions on the surface of the liquid film.
According to this aspect, since the three-phase interface is generated at a plurality of portions of the liquid film, a plurality of portions of the treatment liquid in contact with the through-holes of the flat plate are increased. As a result, the flat plate can effectively trap the particulate matter.
A substrate processing method according to another aspect is characterized in that,
in the plate heating step, the plate is heated.
According to this aspect, since stronger convection can be generated in the liquid film, the particulate matter can be captured more effectively.
A substrate processing method according to another aspect is characterized in that,
in the plate contact step, the position of the plate is set according to the thickness of the liquid film in the liquid film holding step.
According to this aspect, the position of the flat plate in the flat plate contact step can be set to a position corresponding to the thickness of the liquid film.
In another aspect, a substrate processing apparatus is provided that is performed in a predetermined atmosphere,
the disclosed device is provided with:
a substrate supporting device for supporting the substrate in a substantially horizontal state;
a processing liquid supply device for supplying a processing liquid to the upper surface of the substrate supported by the substrate support device to form a liquid film of the processing liquid for processing the substrate;
a flat plate having a mesh member formed with a plurality of through holes;
a plate moving device that moves the plate between a position in contact with the liquid film and a distant position not in contact with the liquid film;
and a controller configured to control the plate moving device to move the plate to a position where the plate comes into contact with the liquid film after a liquid film of the treatment liquid is formed, so that the particulate matter present in the liquid film is attached to and captured by the side surfaces of the through holes of the mesh member.
According to this aspect, the treatment liquid near the substrate moves to the surface of the liquid film and comes into contact with the inner edges of the through holes of the mesh member. Thereby, the particulate matter in the treatment liquid is captured by the flat plate. In this way, the particulate matter in the vicinity of the substrate, which cannot be eliminated by the conventional spin drying, can be effectively removed.
Effects of the invention
According to the invention of each aspect, particulate matter near the substrate can be removed satisfactorily.
Drawings
Fig. 1 is a schematic view showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a top view of the member 13.
Fig. 3 is a cross-sectional schematic view of the member 13 as viewed from the III-III section in fig. 2.
Fig. 4 is a flowchart for explaining the substrate cleaning process.
Fig. 5 is a schematic diagram for explaining the operation of the present invention.
Fig. 6 is a plan view of a member 13A according to a modification.
Fig. 7 is a schematic diagram for explaining a problem of the prior art.
Fig. 8 is a schematic diagram for explaining a problem of the related art.
Detailed Description
A substrate processing apparatus according to an embodiment of the present invention will be described below with reference to the drawings.
Fig. 1 is a cross-sectional view schematically showing the structure of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 1 includes: a substrate rotating mechanism 2 for rotating a substrate W, which is an example of a substrate, while holding the substrate W in a substantially horizontal posture; a liquid supply mechanism 3 for selectively supplying the chemical liquid and the rinse liquid to the upper surface (front surface) of the substrate W held by the substrate rotation mechanism 2; and a housing 1 a. The housing 1a accommodates a substrate rotation mechanism 2, a liquid supply mechanism 3, an arm 11 (described later), a nozzle movement mechanism 12 (described later), an arm 14 (described later), a member movement unit 15 (described later), a member cleaning unit 17 (described later), and the like.
As the substrate rotation mechanism 2, for example, a substrate rotation mechanism of a chucking type is used. Specifically, the substrate rotation mechanism 2 includes: a motor 4; a rotary shaft 5 integrated with a drive shaft of the motor 4; a disk-shaped rotary base 6 attached substantially horizontally to an upper end of the rotary shaft 5; and a plurality of clamping members 7 provided at substantially equal angular intervals at a plurality of locations on the peripheral edge of the spin base 6.
The substrate W can be held in a substantially horizontal posture by the plurality of holding members 7. In this state, when the motor 4 is driven, the spin base 6 is rotated around the center axis of the rotation shaft 5 together with the substrate W in a substantially horizontal posture by the driving force.
The substrate rotation mechanism 2 functions as a substrate support portion that supports the substrate W with a main surface thereof facing upward. The substrate W may be supported by a vacuum suction system in which the lower surface of the substrate W is vacuum-sucked, in addition to the above-described chucking system. The posture of the substrate W to be supported is not limited to a strictly horizontal posture, and may be a posture inclined from the horizontal. If the liquid film of the processing liquid is held on the upper surface of the substrate W, the particulate matter near the substrate W can be removed efficiently by the substrate processing method described later. Therefore, the degree of the inclination of the substrate W is determined by the affinity of the substrate W for the processing liquid and the viscosity of the processing liquid.
The liquid supply mechanism 3 includes: a nozzle 8; a supply pipe 9a connected to the nozzle 8; branch pipes 9b and 9c connected to the supply pipe 9 a; a valve 10b attached to a middle portion of the branch pipe 9 b; and a valve 10c attached to a middle portion of the branch pipe 9 c. A chemical liquid such as a cleaning liquid is supplied from a chemical liquid supply device not shown to the branch pipe 9 b. Rinse liquid such as DIW (Deionized water) is supplied to the branch pipe 9c from a rinse liquid supply device (not shown). By opening one of the valves 10b and 10c and closing the other, the chemical liquid and the rinse liquid can be selectively supplied to the nozzle 8.
In the present embodiment, the rinse liquid is used as a treatment liquid to be brought into contact with the member 13 described later. Therefore, the liquid supply mechanism 3 functions as a processing liquid supply unit that supplies the processing liquid to the upper surface of the substrate W supported by the substrate support unit.
The nozzle 8 is attached to the tip end of the arm 11. The arm 11 extends horizontally above the substrate rotation mechanism 2. A nozzle moving mechanism 12 including a motor and the like is coupled to the arm 11. The arm 11 can be swung in a horizontal plane about an axis set on the substrate rotation mechanism 2 side by the nozzle movement mechanism 12. The nozzle 8 moves horizontally above the substrate rotation mechanism 2 in accordance with the swing of the arm 11.
A member 13 is provided above the substrate rotation mechanism 2. The member 13 is a circular member having an outer diameter slightly smaller than the substrate W, and has a plurality of voids 135 (see fig. 2 described later). A boss 133 is fixed to the upper surface of the member 13. The member 13 is detachably attached to the distal end portion of the arm portion 14 extending horizontally above the substrate rotation mechanism 2 via the boss portion 133. A member moving portion 15 including a motor and the like is coupled to the arm portion 14. The member moving unit 15 can swing the arm unit 14 in a horizontal plane about an axis set on the substrate rotation mechanism 2 side. By swinging the arm 14, the member 13 can be moved horizontally above the substrate rotation mechanism 2, and the member 13 can be moved between a standby position in which it is separated to one side from the substrate rotation mechanism 2 and a position in which the center of the member 13 coincides with the rotation center C of the substrate W on the spin base 6.
The arm portion 14 can be raised and lowered by the member moving portion 15. The member 13 is moved up and down in accordance with the movement of the arm 14, and the lower surface of the member 13 can be positioned at a height close to the upper surface of the substrate W. This enables the member 13 to be superposed on the liquid film of the substrate W during substrate processing.
The substrate processing apparatus 1 includes a member cleaning unit 17. The member cleaning unit 17 is a hollow housing for cleaning the member 13, and includes an openable and closable carrying-in/out port, not shown, for carrying in/out the member 13. A plurality of sprayers 18 for spraying the cleaning liquid onto the member 13 are disposed inside the member cleaning unit 17. The member moving unit 15 can move the member 13 from above the substrate rotation mechanism 2 to the inside of the member cleaning unit 17 by swinging and raising the arm unit 14. When the member 13 is accommodated inside the member cleaning portion 17, the holding of the member 13 by the arm portion 14 is released.
The substrate processing apparatus 1 includes a control unit 16 formed of a microcomputer. The control unit 16 controls the driving of the motor 4, the nozzle moving mechanism 12, and the member moving unit 15 according to a predetermined program, and also controls the opening and closing of the valves 10b and 10 c. The control unit 16 controls the timing of discharging the cleaning liquid from the sprayer 18.
The control unit 16 is electrically connected to each unit included in the substrate processing apparatus 1, and controls the operation of each unit of the substrate processing apparatus 1 while executing various arithmetic processes. The control unit 16 is constituted by a general computer such as a CPU, ROM, RAM, and storage device, which are connected to each other via a bus. The ROM stores basic programs and the like, and the RAM is a work area for the CPU to perform predetermined processing. The storage device is constituted by a nonvolatile storage device such as a flash memory or a hard disk device. A program is stored in the storage device, and a CPU as a main control unit performs arithmetic processing in the order described in the program, thereby realizing various functions. The program is usually stored in advance in a memory such as a storage device and used, but may be provided in the form of a recording medium (program product) recorded in a CD-ROM, a DVD-ROM, an external flash memory, or the like (or may be provided by downloading from an external server via a network or the like) and additionally stored in a memory such as a storage device. Some or all of the functions implemented by the control unit 16 may be implemented in hardware by a dedicated logic circuit or the like.
In addition, the input unit, the display unit, and the communication unit are also connected to the bus in the control unit. The input unit is configured by various switches, a touch panel, and the like, and receives various input setting instructions from the operator. The display unit is constituted by a liquid crystal display device, a lamp, and the like, and displays various kinds of information under the control of the CPU. The communication unit has a data communication function via a LAN or the like.
In the later-described pool (paddle) forming step S3 and the contact step S4, the controller 16 controls the liquid supply mechanism 3 to form a liquid film of the processing liquid on the upper surface of the substrate W, and the control member moving unit 15 controls the lower surface of the member 13 to contact the upper surface of the liquid film of the processing liquid.
Fig. 2 is a plan view schematically showing the structure of the member 13. The member 13 is composed of a circular frame 131 in a plan view, a support portion 132 disposed inside the frame 131 so as to be orthogonal to the radial direction of the frame 131, a boss portion 133 fixed to the support portion 132, and a mesh member 134 supported by the support portion 132 inside the frame 131. The mesh member 134 is formed by intersecting a plurality of rods 134 a.
Fig. 3 is a cross-sectional schematic view of the member 13 as viewed from the III-III section in fig. 2. Each rod 134a has a rectangular shape in cross section and has a side surface 134 b. The side surface 134b is used for capturing particulate matter in a liquid film on the substrate W. In order to allow the trapping of the particulate matter to proceed well, it is preferable that the side 134b is hydrophilic. The frame 131 is also rectangular in cross section and has a side surface 131 b. The support portion 132 is also rectangular in cross section and has a side surface 132 b. The side 131b of the frame 131 and the side 132b of the support 132 are also used for capturing particulate matter, similarly to the side 134b of the rod 134a, and the manner in which the side 134b of the rod 134a, which is representative of the above, is used for capturing particulate matter will be described in detail below.
The member 13 has a lower surface provided with a plurality of first openings and an upper surface provided with a plurality of second openings communicating with the plurality of first openings. A plurality of gaps 135 are provided between the first openings and the second openings, respectively. Specifically, a gap 135 is formed between the upper surface and the lower surface of the member 13 at a portion surrounded by the adjacent rod 134a and rod 134a, a portion surrounded by the rod 134a and frame 131, a portion surrounded by the rod 134a and support 132, and a portion surrounded by the rod 134a, frame 131, and support 132.
As can be seen from fig. 3, the width of the frame 131 and the support portion 132 is larger than the width of the rod 134a, and the rigidity of the frame 131 and the support portion 132 is higher than the rigidity of the rod 134 a. Then, the boss 133 is attached to the support 132 having high rigidity. Therefore, even in the case where the member 13 is moved with the boss 133 attached to the arm portion 14, the member 13 is hard to be deformed.
Fig. 4 is a flowchart when the substrate processing according to the present embodiment is performed. The substrate W is already fixed to the spin base 6, and the member 13 is located at a standby position away from the upper side of the substrate W.
First, the control unit 16 executes the chemical solution process S1. Specifically, the controller 16 rotates the substrate W at a predetermined chemical processing speed (for example, 1000 rpm). At the same time, the nozzle moving mechanism 12 is controlled to move the arm 11, thereby moving the nozzle 8 to a position directly above the rotation center C of the substrate W. In this state, the valve 10b is opened. Thereby, the chemical solution is supplied from the nozzle 8 to the rotation center C of the substrate W. The supplied chemical solution spreads and flows from the rotation center C of the substrate W toward the peripheral edge of the substrate W by a centrifugal force, and the chemical solution treatment is performed on the entire upper surface of the substrate W.
After a predetermined time has elapsed from the start of the chemical solution process S1, the controller 16 executes a flushing process step S2. Specifically, the controller 16 closes the valve 10b and opens the valve 10 c. Thereby, the rinse liquid is supplied from the nozzle 8 to the rotation center C of the substrate W. The supplied rinse liquid spreads from the rotation center C of the substrate W toward the peripheral edge of the substrate W, and is scattered from the peripheral edge of the substrate W to the outside. As a result, the chemical solution adhering to the upper surface of the substrate W is replaced with the rinse solution.
The rinsing process S2 corresponds to a process liquid supply process of supplying a process liquid to one main surface of the substrate W while supporting the substrate W with the one main surface facing upward.
After the flushing process S2 is completed, the controller 16 starts a pool forming process S3. That is, the motor 4 is controlled to decelerate and stop the rotation of the substrate W. Alternatively, it is decelerated to a rotation speed (e.g., 10rpm) that can be regarded as the same degree as the stop. The controller 16 continues to supply the rinse liquid to the rotation center C of the substrate W. Accordingly, the rinse liquid is caused to stay on the upper surface of the substrate W by the surface tension of the rinse liquid, thereby forming a liquid film in the form of a pool (puddle). After the liquid film is formed on the upper surface of the substrate W, the controller 16 closes the valve 10c to stop the supply of the rinse liquid to the substrate W.
As described above, the pool forming step S3 corresponds to a liquid film holding step of holding the liquid film of the processing liquid on the upper surface of the substrate W.
Next, the control unit 16 performs a contact step S4. Specifically, the controller 16 controls the member moving unit 15 to horizontally move the arm 14 until the member 13 is positioned directly above the substrate W while maintaining the pool-like liquid film on the upper surface of the substrate W. Next, the controller 16 controls the member moving unit 15 to lower the arm 14 to a height at which the lower surface of the member 13 comes into contact with the upper surface of the liquid film on the substrate W.
Fig. 5 is a schematic view showing a state where the member 13 is in contact with the liquid film F. The liquid film F is held on the substrate W. In the gap 135 of the member 13, the liquid surface F12 of the liquid film F is exposed to the ambient gas a in the housing 1a of the substrate processing apparatus 1. The lower surface of the member 13 is in contact with the liquid surface F12 in a liquid-tight state. The fluid level F12 is also continuous with the side 134b of the member 13. At the contact portion 134c between the liquid surface F12 and the side surface 134b, a three-phase interface is formed where the liquid film F intersects with the ambient gas a directly above the liquid film F and the rod 134 a. The interface free energy is generated at the contact portion 134 c. As a result, convection currents S are generated between the rod 134a and the substrate W, and a flow from the liquid surface F12 to the vicinity of the substrate W and a flow from the vicinity of the substrate W to the liquid surface F12 are formed. The particulate matter contained in the processing liquid near the upper surface of the substrate W is moved toward the liquid surface F12 by the liquid flow, and is brought into contact with and captured at the contact portion 134c of the side surface 134 b. Further, as the rinse liquid evaporates, the liquid level F12 falls as indicated by a broken line F11. Thereby, the particles caught by the side surface 134b are sequentially left on the side surface 134b, so that the particles can be prevented from being introduced into the liquid film F again.
As described above, the member 13 is a circular member having an outer diameter slightly smaller than the substrate W. Therefore, in the contacting step S4, all of the plurality of first openings of the member 13 are in contact with the upper surface of the liquid film F (the liquid surface F12), and the liquid surface F12 reaches the inner wall of all the gaps. Thereby, the above-mentioned convection currents S are generated in all parts near the first opening, and the particulate matter is captured particularly effectively. In addition, as in the present embodiment, even when all of the plurality of first openings are not in contact with the liquid surface F12, in the contact step S4, two or more of the plurality of first openings of the member 13 are preferably in contact with the liquid surface F12. Thereby, the above-described convection S is generated at two or more locations, thereby effectively trapping the particulate matter.
The evaporation of the rinse liquid at the contact portion 134c is promoted as the temperature of the member 13 (e.g., the rod 134a) is higher. Thereby, since the liquid flow from the bottom to the top in the liquid film F can be made stronger, the amount of the particulate matter captured by the side surface 134b can be increased. Therefore, in the contact step S4 and the particulate matter trapping step S5, the rod 134a is preferably heated to maintain a temperature higher than the normal temperature.
For example, when the member 13 includes a heat generating body that generates heat in response to the application of voltage, the member 13 is heated by applying voltage to the member 13 by an application unit not shown. As the structure of such a member 13, a structure in which the member 13 includes an electric heating wire can be cited.
In addition, when the water repellency of the upper surface of the substrate W is low (i.e., when the hydrophilicity is high), the liquid film F becomes thin, and conversely, when the water repellency is high (i.e., when the hydrophilicity is low), the liquid film F becomes thick. Therefore, in the contact step S4, the height position of the member 13 may be determined according to the water repellency of the substrate W. Specifically, when the water repellency of the upper surface of the substrate W is low, the height of the member 13 is set to be low, and conversely, when the water repellency is high, the height of the member 13 is set to be high. In this manner, in the contact step S4, the height position of the member 13 is adjusted according to the thickness of the liquid film F. In addition, in the case where the thickness of the liquid film F changes during the contacting step S4 and the particulate matter trapping step S5, the height position of the member 13 may be adjusted in accordance with the change in the thickness of the liquid film F.
Next, the control unit 16 executes a member detaching step S6. That is, the control unit 16 controls the member moving unit 15 to raise the arm unit 14. Thereby, the member 13 is disengaged from the liquid surface F12. Next, the controller 16 controls the member moving unit 15 to rotate the arm 14 so that the member 13 moves from a position directly above the substrate W.
Next, the control unit 16 executes the component cleaning process S7. That is, the control unit 16 controls the member moving unit 15 to move up and down and rotate the arm unit 14 so that the member 13 is accommodated in the member cleaning unit 17. Next, a predetermined cleaning fluid such as a cleaning liquid is sprayed from the sprayer 18 to the member 13 to remove the particulate matter adhering to the member 13 at the time of performing the particulate matter trapping step S5. The cleaned member 13 may be dried inside the member cleaning unit 17.
The controller 16 performs the spin-drying process S8 immediately after the component cleaning process S7 or in parallel with the component cleaning process S7. That is, the controller 16 controls the motor 4 to rotate the spin base 6 at a high speed. Thereby, the liquid film F held on the substrate W is scattered by the centrifugal force and recovered by a not-shown cup surrounding the spin base 6. As described above, even when spin drying is performed, it is difficult to scatter and remove the liquid film region (the lower layer region F1) near the substrate W from the substrate W, but in the present embodiment, the particulate matter trapping step S5 is performed before the spin drying step S8 is performed. Thereby, the particulate matter contained in the lower layer region F1 can be removed from the substrate W. Therefore, even if the rinse liquid in the lower region F1 remains on the substrate W after the spin drying process S8 is performed, the residual liquid contains almost no particulate matter. Therefore, no particulate matter remains on the upper surface of the substrate W. This enables high substrate cleaning performance to be achieved.
In the above embodiment, the particulate matter trapping step S5 is executed only once. However, the steps from the pool forming step S3 to the member detaching step S6 may be repeatedly performed. In this way, the particulate matter can be removed from the liquid film F held on the substrate W a plurality of times. Thereby, the amount of the particulate matter contained in the liquid film F can be further reduced. As a result, the cleaning performance of the substrate can be improved.
In addition, in the above embodiment, the contacting process S4 and the particulate matter trapping process S5 are performed in a state where the member 13 is held by the arm 14. However, the spin base 6 may be provided with the clamp member 7 for fixing the substrate W and the fixing member 13 separately. Thus, in the contact step S4, the member 13 can be detached from the arm portion 14 and fixed to the spin base 6. Then, the particulate matter trapping process S5 can be performed with the member 13 placed on the spin base 6.
Further, the rinse liquid may be supplied from the nozzle 8 to the liquid film F in parallel with the particle capturing step S5. In the particulate matter trapping step S5, the rotation speed of the substrate W may be changed. By adding such a step, vibration can be applied to the liquid film F in performing the particulate matter trapping step S5. This enables the particulate matter present near the substrate W to be more effectively attached to the side surface 134b of the mesh member 134.
In the above embodiment, the embodiment in which the member 13 has the lower surface provided with the plurality of first openings and the upper surface provided with the plurality of second openings communicating with the plurality of first openings has been described, but the present invention is not limited to this. The member may have a structure different from the above embodiment as long as it has one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings.
For example, the member may have one surface provided with a plurality of first openings and the other surface provided with one second opening communicating with the plurality of first openings, and a branched void portion may be formed inside the member.
In another embodiment, the member may have one surface (for example, a lower surface) provided with the plurality of first openings and another plurality of surfaces (a plurality of surfaces such as an upper surface and a side surface) provided with one second opening communicating with the plurality of first openings.
In the above embodiment, the lower surface of the member (the surface of the member that contacts the processing liquid) has a flat shape, but the present invention is not limited to this. The lower surface of the member may have a concave-convex shape or a curved shape.
Fig. 6 is a plan view of a member 13A according to a modification. In the above embodiment, the embodiment in which the member 13 is the mesh member 134 having the plurality of void portions 135 communicating in the thickness direction has been described, but the present invention is not limited to this. As in this modification, the member 13A may be a flat plate 139 (so-called punched plate) in which a plurality of through holes 135A penetrating in the thickness direction are bored. As in the modification, the member 13A may have a rectangular outer shape in plan view.
Industrial applicability
The present invention can be effectively used for substrate processing.
Description of the reference numerals:
1 substrate processing apparatus
2 substrate rotating mechanism
3 liquid supply mechanism
4 Motor
5 rotating shaft
6 rotating base
7 clamping member
8 spray nozzle
11. 14 arm part
12 nozzle moving mechanism
13. 13A member
133 boss
134 net component
134a rod
134b side surface
134c contact site
135 space part
135A through hole
139 plate
15 moving part of component
16 control part
17 member cleaning part
18 sprayer
F liquid film
F12 liquid level
S convection
W substrate
Claims (7)
1. A method for processing a substrate, wherein,
the method comprises the following steps:
a treatment liquid supply step of supplying a treatment liquid to the one main surface of the substrate in a state where the substrate is supported with the one main surface thereof facing upward;
a liquid film holding step of holding a liquid film of a treatment liquid on the one main surface of the substrate;
a contact step of bringing one surface of a member having one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings into contact with the upper surface of the liquid film,
the member is a flat plate provided with a plurality of through holes penetrating in the thickness direction or a net shape having a plurality of void parts communicating in the thickness direction,
in the contacting step, the upper surface of the liquid film is exposed to an atmosphere in a space where the substrate processing is performed, in the plurality of through holes or the plurality of gaps of the member.
2. The substrate processing method according to claim 1, wherein,
in the contacting step, two or more first openings among the plurality of first openings are in contact with the upper surface of the liquid film.
3. The substrate processing method according to claim 1, wherein,
in the contacting step, the height position of the member is adjusted according to the thickness of the liquid film.
4. A method for processing a substrate, wherein,
the method comprises the following steps:
a treatment liquid supply step of supplying a treatment liquid to the one main surface of the substrate in a state where the substrate is supported with the one main surface thereof facing upward;
a liquid film holding step of holding a liquid film of a treatment liquid on the one main surface of the substrate;
a contact step of bringing one surface of a member having one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings into contact with the upper surface of the liquid film,
in the contact step, the member is heated.
5. A substrate processing apparatus, wherein,
the disclosed device is provided with:
a substrate support portion that supports the substrate with a main surface thereof facing upward;
a processing liquid supply unit configured to supply a processing liquid to the one main surface of the substrate supported by the substrate support unit;
a member having one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings;
a member moving unit that moves the member;
a control unit configured to control the treatment liquid supply unit to form a liquid film of the treatment liquid on the one main surface, and to control the member moving unit to bring one surface of the member into contact with an upper surface of the liquid film,
the member is a flat plate provided with a plurality of through holes penetrating in the thickness direction or a net shape having a plurality of void parts communicating in the thickness direction,
the upper surface of the liquid film is exposed to an ambient gas in a space where a substrate is processed, through the plurality of through holes or the plurality of gaps of the member, in a state where one surface of the member is brought into contact with the upper surface of the liquid film.
6. The substrate processing apparatus of claim 5, wherein,
the component cleaning device further comprises a component cleaning part for cleaning the component.
7. A substrate processing apparatus, wherein,
the disclosed device is provided with:
a substrate support portion that supports the substrate with a main surface thereof facing upward;
a processing liquid supply unit configured to supply a processing liquid to the one main surface of the substrate supported by the substrate support unit;
a member having one surface provided with a plurality of first openings and the other surface provided with one or more second openings communicating with the plurality of first openings;
a member moving unit that moves the member;
a control unit configured to control the treatment liquid supply unit to form a liquid film of the treatment liquid on the one main surface, and to control the member moving unit to bring one surface of the member into contact with an upper surface of the liquid film,
an applying section that applies a voltage to the member,
the member includes a heat generating body that generates heat in response to application of a voltage,
the applying unit applies a voltage to the member in a state where one surface of the member is brought into contact with the upper surface of the liquid film.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015068537 | 2015-03-30 | ||
| JP2015-068537 | 2015-03-30 | ||
| JP2016-004974 | 2016-01-14 | ||
| JP2016004974A JP2016192538A (en) | 2015-03-30 | 2016-01-14 | Substrate treatment method and substrate treatment device |
| PCT/JP2016/058155 WO2016158386A1 (en) | 2015-03-30 | 2016-03-15 | Substrate treatment method and substrate treatment device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107210213A CN107210213A (en) | 2017-09-26 |
| CN107210213B true CN107210213B (en) | 2020-08-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680005004.6A Expired - Fee Related CN107210213B (en) | 2015-03-30 | 2016-03-15 | Substrate processing method and substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2016192538A (en) |
| KR (1) | KR101953046B1 (en) |
| CN (1) | CN107210213B (en) |
| TW (1) | TWI603165B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491770B (en) * | 2018-05-15 | 2024-04-09 | 东京毅力科创株式会社 | Substrate processing method, storage medium, and substrate processing apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373706A (en) * | 2007-08-21 | 2009-02-25 | 大日本网屏制造株式会社 | Substrate cleaning apparatus and substrate cleaning method |
| JP2012174964A (en) * | 2011-02-23 | 2012-09-10 | Sumco Corp | Method for analyzing metallic contamination of silicon wafer |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243807A (en) * | 1999-02-19 | 2000-09-08 | Dainippon Screen Mfg Co Ltd | Substrate processing device |
| JP3892792B2 (en) | 2001-11-02 | 2007-03-14 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate cleaning apparatus |
| JP4678665B2 (en) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| US7354869B2 (en) * | 2004-04-13 | 2008-04-08 | Kabushiki Kaisha Toshiba | Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method |
| JP2008541413A (en) * | 2005-09-15 | 2008-11-20 | 株式会社荏原製作所 | Cleaning member, substrate cleaning device, substrate processing device |
| JP5528927B2 (en) * | 2010-07-09 | 2014-06-25 | 東京エレクトロン株式会社 | Substrate cleaning apparatus and substrate cleaning method |
| JP2012174974A (en) * | 2011-02-23 | 2012-09-10 | Toppan Printing Co Ltd | Development method and development device |
| WO2014050941A1 (en) * | 2012-09-27 | 2014-04-03 | 大日本スクリーン製造株式会社 | Processing fluid supply device, substrate processing device, processing fluid supply method, substrate processing method, processing fluid processing device, and processing fluid processing method |
-
2016
- 2016-01-14 JP JP2016004974A patent/JP2016192538A/en active Pending
- 2016-03-15 CN CN201680005004.6A patent/CN107210213B/en not_active Expired - Fee Related
- 2016-03-15 KR KR1020177016675A patent/KR101953046B1/en active IP Right Grant
- 2016-03-28 TW TW105109689A patent/TWI603165B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101373706A (en) * | 2007-08-21 | 2009-02-25 | 大日本网屏制造株式会社 | Substrate cleaning apparatus and substrate cleaning method |
| JP2012174964A (en) * | 2011-02-23 | 2012-09-10 | Sumco Corp | Method for analyzing metallic contamination of silicon wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016192538A (en) | 2016-11-10 |
| KR101953046B1 (en) | 2019-02-27 |
| KR20170085115A (en) | 2017-07-21 |
| TWI603165B (en) | 2017-10-21 |
| TW201706720A (en) | 2017-02-16 |
| CN107210213A (en) | 2017-09-26 |
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