JP2009218249A - Wafer cleaning equipment and production process of semiconductor device - Google Patents

Wafer cleaning equipment and production process of semiconductor device Download PDF

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JP2009218249A
JP2009218249A JP2008057400A JP2008057400A JP2009218249A JP 2009218249 A JP2009218249 A JP 2009218249A JP 2008057400 A JP2008057400 A JP 2008057400A JP 2008057400 A JP2008057400 A JP 2008057400A JP 2009218249 A JP2009218249 A JP 2009218249A
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wafer
holding
semiconductor wafer
pure water
chemical
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Kazunori Ueno
和紀 上野
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Seiko Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide wafer cleaning equipment which can remove polymer or contamination surely with chemical or deionized water, and to provide a production process of a semiconductor device. <P>SOLUTION: Wafer cleaning equipment comprises a wafer holding mechanism 1 for holding a semiconductor wafer 3, a rotary mechanism for rotating the wafer holding mechanism 1, a chemical nozzle 5 or a deionized water nozzle 4 provided above the wafer holding mechanism 1 and delivering chemical or deionized water to the surface of the semiconductor wafer 3, and a chemical holding tool 6 arranged on the outside of the wafer holding mechanism 1 to cover the bevel portion of the semiconductor wafer 3 and holding the chemical or deionized water temporarily at the bevel portion. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ウェハ洗浄装置及び半導体装置の製造方法に係わり、特に、薬液によってポリマー又は異物を確実に除去できるウェハ洗浄装置及び半導体装置の製造方法に関する。   The present invention relates to a wafer cleaning apparatus and a semiconductor device manufacturing method, and more particularly to a wafer cleaning apparatus and a semiconductor device manufacturing method capable of reliably removing a polymer or a foreign substance with a chemical solution.

従来の枚葉式のウェハ洗浄装置は、半導体製造工程において半導体ウェハの表面に薬液を供給し、その薬液によって半導体ウェハ表面に付着したポリマーを洗浄し、その後、半導体ウェハを回転させて前記薬液を半導体ウェハ表面から除去するようになっている。   A conventional single wafer cleaning apparatus supplies chemical liquid to the surface of a semiconductor wafer in a semiconductor manufacturing process, cleans the polymer adhering to the surface of the semiconductor wafer with the chemical liquid, and then rotates the semiconductor wafer to remove the chemical liquid. The semiconductor wafer is removed from the surface.

しかしながら、上記従来のウェハ洗浄装置では、半導体ウェハのベベル部(ウェハの外周部)に薬液がかかる前に半導体ウェハの外方へ薬液が飛んでしまい、半導体ウェハのベベル部に薬液が溜まることがない。このため、半導体ウェハのベベル部に付着したポリマーを確実に除去することができなかった。   However, in the above-described conventional wafer cleaning apparatus, the chemical liquid may flow to the outside of the semiconductor wafer before the chemical liquid is applied to the bevel portion (outer peripheral portion of the wafer) of the semiconductor wafer, and the chemical solution may accumulate on the bevel portion of the semiconductor wafer. Absent. For this reason, the polymer adhering to the bevel portion of the semiconductor wafer could not be reliably removed.

また、他の従来のウェハ洗浄装置は、半導体ウェハのベベル部に付着したポリマーをブラシスクラブの洗浄技術で処理を行い、物理力によってポリマーを除去するものである(例えば特許文献1参照)。   In another conventional wafer cleaning apparatus, a polymer adhering to a bevel portion of a semiconductor wafer is processed by a brush scrub cleaning technique, and the polymer is removed by physical force (see, for example, Patent Document 1).

特開平6−45302号公報(段落0011、図2)JP-A-6-45302 (paragraph 0011, FIG. 2)

上述したように従来のウェハ洗浄装置では、半導体ウェハのベベル部に付着したポリマーを確実に除去することができないため、半導体ウェハのベベル部にポリマーが残るという問題がある。   As described above, the conventional wafer cleaning apparatus has a problem that the polymer remains on the bevel portion of the semiconductor wafer because the polymer attached to the bevel portion of the semiconductor wafer cannot be reliably removed.

また、上記他の従来のウェハ洗浄装置では、ブラシによって半導体ウェハのベベル部に付着したポリマーをブラシによって除去するため、ポリマーが除去されてもパーティクルが発生するという問題がある。また、ポリマーを除去する場合は、ブラシスクラブよりもポリマー剥離液のような薬液を用いるほうが除去効率を良くすることができる。   Further, in the other conventional wafer cleaning apparatus, since the polymer attached to the bevel portion of the semiconductor wafer is removed by the brush with the brush, there is a problem that particles are generated even if the polymer is removed. Moreover, when removing a polymer, the removal efficiency can be improved by using a chemical solution such as a polymer stripping solution rather than a brush scrub.

本発明は上記のような事情を考慮してなされたものであり、その目的は、薬液又は純水によってポリマー又は異物を確実に除去できるウェハ洗浄装置及び半導体装置の製造方法を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a wafer cleaning apparatus and a semiconductor device manufacturing method capable of reliably removing a polymer or a foreign substance with a chemical solution or pure water. .

上記課題を解決するため、本発明に係るウェハ洗浄装置は、半導体ウェハを保持するウェハ保持機構と、
前記ウェハ保持機構を回転させる回転機構と、
前記ウェハ保持機構の上方に設けられ、薬液又は純水を前記半導体ウェハの表面に吐出する薬液ノズル又は純水ノズルと、
前記ウェハ保持機構の外側であって前記半導体ウェハのベベル部を覆うように配置され、前記ベベル部に前記薬液又は前記純水を一時的に保持する保持治具と、
を具備することを特徴とする。
In order to solve the above problems, a wafer cleaning apparatus according to the present invention includes a wafer holding mechanism for holding a semiconductor wafer,
A rotating mechanism for rotating the wafer holding mechanism;
A chemical nozzle or pure water nozzle that is provided above the wafer holding mechanism and discharges the chemical liquid or pure water to the surface of the semiconductor wafer;
A holding jig that is disposed outside the wafer holding mechanism and covers the bevel portion of the semiconductor wafer, and temporarily holds the chemical or pure water on the bevel portion;
It is characterized by comprising.

上記本発明に係るウェハ洗浄装置によれば、半導体ウェハのベベル部を保持治具によって覆い、洗浄が困難な半導体ウェハのベベル部に薬液又は純水を一時的に保持することにより、前記ベベル部に付着したポリマー又は異物を前記薬液又は純水によって確実に除去することができる。   According to the wafer cleaning apparatus of the present invention, the bevel portion of the semiconductor wafer is covered with a holding jig, and the bevel portion is temporarily held by the chemical solution or pure water on the bevel portion of the semiconductor wafer that is difficult to clean. The polymer or foreign matter adhering to can be reliably removed with the chemical solution or pure water.

また、本発明に係るウェハ洗浄装置において、前記保持治具は薬液又は純水を一時的に保持する保持部を有しており、前記保持部の内部形状は断面がコ字形を有しており、前記保持部は上面部材と下面部材とこれらを連結する連結部材を有していることも可能である。   Moreover, in the wafer cleaning apparatus according to the present invention, the holding jig has a holding part for temporarily holding a chemical solution or pure water, and the internal shape of the holding part has a U-shaped cross section. The holding portion may include an upper surface member, a lower surface member, and a connecting member that connects them.

また、本発明に係るウェハ洗浄装置において、前記上面部材の内面と前記下面部材の内面が互いに略平行であることも可能である。
また、本発明に係るウェハ洗浄装置において、前記下面部材の内面が下方に傾斜していることも可能である。
また、本発明に係るウェハ洗浄装置において、前記上面部材の内面が上方又は下方に傾斜していることも可能である。
In the wafer cleaning apparatus according to the present invention, the inner surface of the upper surface member and the inner surface of the lower surface member may be substantially parallel to each other.
In the wafer cleaning apparatus according to the present invention, the inner surface of the lower surface member may be inclined downward.
In the wafer cleaning apparatus according to the present invention, the inner surface of the upper surface member may be inclined upward or downward.

また、本発明に係るウェハ洗浄装置において、前記上面部材の内面に、前記薬液又は前記純水が前記保持部の内部から前記半導体ウェハの表面へ飛散するのを防止するための凸部からなる飛散防止部が設けられていることも可能である。   Further, in the wafer cleaning apparatus according to the present invention, the inner surface of the upper surface member is a scatter that includes a convex portion for preventing the chemical solution or the pure water from being scattered from the inside of the holding portion to the surface of the semiconductor wafer. It is also possible that a prevention part is provided.

また、本発明に係るウェハ洗浄装置において、前記連結部材に、前記薬液又は前記純水を前記保持部の外に排出するための開孔が設けられていることも可能である。   In the wafer cleaning apparatus according to the present invention, the connecting member may be provided with an opening for discharging the chemical solution or the pure water out of the holding unit.

本発明に係る半導体装置の製造方法は、半導体ウェハをウェハ保持機構によって保持し、前記ウェハ保持機構と共に前記半導体ウェハを回転させる工程と、
前記半導体ウェハの表面に薬液又は純水を供給する工程と、
前記半導体ウェハのベベル部を覆うように保持治具を配置し、前記薬液又は前記純水を前記保持治具に一時的に保持しながら前記半導体ウェハのベベル部を前記薬液又は前記純水によって洗浄する工程と、
を具備することを特徴とする。
A method of manufacturing a semiconductor device according to the present invention includes a step of holding a semiconductor wafer by a wafer holding mechanism and rotating the semiconductor wafer together with the wafer holding mechanism;
Supplying a chemical or pure water to the surface of the semiconductor wafer;
A holding jig is disposed so as to cover the bevel portion of the semiconductor wafer, and the bevel portion of the semiconductor wafer is cleaned with the chemical solution or the pure water while temporarily holding the chemical solution or the pure water on the holding jig. And the process of
It is characterized by comprising.

上記本発明に係る半導体装置の製造方法によれば、半導体ウェハのベベル部を保持治具によって覆うことにより、洗浄が困難な半導体ウェハのベベル部に付着したポリマー又は異物を薬液又は純水によって確実に除去することができる。   According to the method for manufacturing a semiconductor device of the present invention, the bevel portion of the semiconductor wafer is covered with the holding jig, so that the polymer or foreign matter adhering to the bevel portion of the semiconductor wafer that is difficult to clean can be surely secured with chemicals or pure water. Can be removed.

本発明に係る半導体装置の製造方法は、半導体ウェハをウェハ保持機構によって保持し、前記ウェハ保持機構と共に前記半導体ウェハを回転させる工程と、
前記半導体ウェハの表面に薬液を供給する工程と、
前記半導体ウェハのベベル部を覆うように保持治具を配置し、前記薬液を前記保持治具に一時的に保持しながら前記半導体ウェハのベベル部を前記薬液によって洗浄する工程と、
前記薬液の供給を停止し、前記半導体ウェハの表面に純水を供給し、前記純水を前記保持治具に一時的に保持しながら前記半導体ウェハのベベル部を前記純水によってリンスする工程と、
前記半導体ウェハのベベル部から前記保持治具を離し、前記純水の供給を停止し、前記半導体ウェハの表面を乾燥させる工程と、
を具備することを特徴とする。
A method of manufacturing a semiconductor device according to the present invention includes a step of holding a semiconductor wafer by a wafer holding mechanism and rotating the semiconductor wafer together with the wafer holding mechanism;
Supplying a chemical to the surface of the semiconductor wafer;
Placing a holding jig so as to cover the bevel portion of the semiconductor wafer, and cleaning the bevel portion of the semiconductor wafer with the chemical solution while temporarily holding the chemical solution in the holding jig;
Suspending the supply of the chemical solution, supplying pure water to the surface of the semiconductor wafer, and rinsing the bevel portion of the semiconductor wafer with the pure water while temporarily holding the pure water in the holding jig; ,
Separating the holding jig from the bevel portion of the semiconductor wafer, stopping the supply of the pure water, and drying the surface of the semiconductor wafer;
It is characterized by comprising.

以下、図面を参照して本発明の実施の形態について説明する。
本発明の実施の形態によるウェハ洗浄装置について図1、図3及び図5(A)を参照しつつ説明する。
図1(A)及び図3(A)は本発明の実施の形態によるウェハ洗浄装置を模式的に示す断面図であり、図1(B)及び図3(B)は図1(A)及び図3(A)に示すウェハ洗浄装置の平面図である。図5(A)は、図1及び図3に示すウェハ洗浄装置の薬液保持治具を示す断面図である。
Embodiments of the present invention will be described below with reference to the drawings.
A wafer cleaning apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1, 3, and 5A.
1A and 3A are cross-sectional views schematically showing a wafer cleaning apparatus according to an embodiment of the present invention. FIGS. 1B and 3B are FIGS. FIG. 4 is a plan view of the wafer cleaning apparatus shown in FIG. FIG. 5A is a cross-sectional view showing a chemical holding jig of the wafer cleaning apparatus shown in FIGS.

図1及び図3に示すように、ウェハ洗浄装置は半導体ウェハ3を保持するウェハ保持機構1を有しており、このウェハ保持機構1は回転軸2の一端に取り付けられている。この回転軸2の他端はモータなどの回転駆動機構(図示せず)が取り付けられており、この回転駆動機構によって回転軸2を回転させるようになっている。   As shown in FIGS. 1 and 3, the wafer cleaning apparatus has a wafer holding mechanism 1 that holds a semiconductor wafer 3, and the wafer holding mechanism 1 is attached to one end of a rotating shaft 2. A rotary drive mechanism (not shown) such as a motor is attached to the other end of the rotary shaft 2, and the rotary shaft 2 is rotated by this rotary drive mechanism.

ウェハ保持機構1の外側には、薬液又は純水を一時的に保持する薬液保持治具6が配置されている。この薬液保持治具6は、半導体ウェハ3のベベル部3aに薬液又は純水を保持する薬液保持部9と、この薬液保持部9を支持する支持部8とを有している。薬液保持部9は、断面が図5(A)に示すようにコ字形からなり、平面が図3(B)に示すように半導体ウェハ3の外周に沿った形状を有している。このため、薬液保持治具6を移動機構(図示せず)によって図3に示す位置に移動させると、半導体ウェハ3のベベル部3aが薬液保持部9によって覆われる。   A chemical holding jig 6 that temporarily holds a chemical or pure water is disposed outside the wafer holding mechanism 1. The chemical liquid holding jig 6 includes a chemical liquid holding part 9 that holds a chemical liquid or pure water on the bevel portion 3 a of the semiconductor wafer 3 and a support part 8 that supports the chemical liquid holding part 9. The chemical liquid holding unit 9 has a U-shaped cross section as shown in FIG. 5A, and the plane has a shape along the outer periphery of the semiconductor wafer 3 as shown in FIG. Therefore, when the chemical solution holding jig 6 is moved to the position shown in FIG. 3 by a moving mechanism (not shown), the bevel portion 3 a of the semiconductor wafer 3 is covered with the chemical solution holding portion 9.

ウェハ保持機構1の上方には薬液を吐出させる薬液ノズル5が配置されており、この薬液ノズル5によって半導体ウェハ3の表面に薬液が吐出されるようになっている。また、ウェハ保持機構1の上方には純水ノズル4が配置されており、この純水ノズル4によって半導体ウェハ3の表面に純水が吐出されるようになっている。   Above the wafer holding mechanism 1, a chemical solution nozzle 5 that discharges the chemical solution is disposed, and the chemical solution is discharged onto the surface of the semiconductor wafer 3 by the chemical solution nozzle 5. A pure water nozzle 4 is disposed above the wafer holding mechanism 1, and pure water is discharged onto the surface of the semiconductor wafer 3 by the pure water nozzle 4.

次に、本発明の実施の形態によるウェハ洗浄装置によって半導体ウェハを薬液で洗浄する工程について図1〜図4を参照しつつ説明する。   Next, a process of cleaning a semiconductor wafer with a chemical solution by the wafer cleaning apparatus according to the embodiment of the present invention will be described with reference to FIGS.

まず、図1に示すように、ウェハ保持機構1に半導体ウェハ3の裏面を吸着保持させた状態で、回転軸2を前記回転駆動機構によって回転させることによりウェハ保持機構1と共に半導体ウェハ3を矢印7のように回転させる。   First, as shown in FIG. 1, with the wafer holding mechanism 1 holding the back surface of the semiconductor wafer 3 by suction, the rotary shaft 2 is rotated by the rotation driving mechanism to move the semiconductor wafer 3 together with the wafer holding mechanism 1 to an arrow. Rotate as in 7.

次に、図2に示すように、半導体ウェハ3の中央上方に薬液ノズル5を移動させ、この薬液ノズル5から半導体ウェハ3の表面中央に薬液を吐出させる。この吐出された薬液は、半導体ウェハ3の回転により半導体ウェハ3の表面中央から外周へ向けて広げられる。これにより、半導体ウェハ3の表面が薬液によって洗浄される。この処理の時間は1〜300秒程度とする。   Next, as shown in FIG. 2, the chemical solution nozzle 5 is moved above the center of the semiconductor wafer 3, and the chemical solution is discharged from the chemical solution nozzle 5 to the center of the surface of the semiconductor wafer 3. The discharged chemical solution is spread from the center of the surface of the semiconductor wafer 3 toward the outer periphery by the rotation of the semiconductor wafer 3. Thereby, the surface of the semiconductor wafer 3 is cleaned with the chemical solution. The processing time is about 1 to 300 seconds.

次に、図3に示すように、半導体ウェハ3の回転速度を10〜1000rpm程度まで低くし、半導体ウェハのベベル部3aに薬液保持治具6を近づけ、ベベル部3aを薬液保持部9によって覆う。これにより、半導体ウェハ3のベベル部3aから遠心力で外側に飛ばされた薬液が薬液保持部9によって一時的に保持されて溜まり、その溜められた薬液によってベベル部3aが洗浄される。この薬液処理の時間は1〜300秒程度とする。尚、薬液保持部9で一時的に溜められた薬液は、薬液保持部9の外側に飛ばされる。   Next, as shown in FIG. 3, the rotation speed of the semiconductor wafer 3 is lowered to about 10 to 1000 rpm, the chemical holding jig 6 is brought close to the bevel portion 3 a of the semiconductor wafer, and the bevel portion 3 a is covered with the chemical holding portion 9. . As a result, the chemical solution blown outward from the bevel portion 3a of the semiconductor wafer 3 by the centrifugal force is temporarily held and stored by the chemical solution holding portion 9, and the bevel portion 3a is washed by the stored chemical solution. The time for this chemical treatment is about 1 to 300 seconds. The chemical solution temporarily stored in the chemical solution holding unit 9 is blown to the outside of the chemical solution holding unit 9.

次に、図4(A)に示すように、薬液ノズル5から薬液を吐出するのを停止し、薬液ノズル5を半導体ウェハ3の中央上方から外側に移動させる。この際、薬液保持治具6は移動させない。   Next, as shown in FIG. 4A, the discharge of the chemical solution from the chemical solution nozzle 5 is stopped, and the chemical solution nozzle 5 is moved from the upper center of the semiconductor wafer 3 to the outside. At this time, the chemical solution holding jig 6 is not moved.

次に、図4(B)に示すように、半導体ウェハ3の中央上方に純水ノズル4を移動させ、この純水ノズル4から半導体ウェハ3の表面中央に純水を吐出させる。この吐出された純水は、半導体ウェハ3の回転により半導体ウェハ3の表面中央から外周へ向けて広げられる。そして、半導体ウェハ3のベベル部3aから遠心力で外側に飛ばされた純水が薬液保持部9によって一時的に保持されて溜まり、その溜められた純水によってベベル部3a及びウェハ外周裏面に付着した薬液が除去される。このリンス処理の時間は1〜300秒程度とする。尚、薬液保持部9で一時的に溜められた純水は、薬液保持部9の外側に飛ばされる。   Next, as shown in FIG. 4B, the pure water nozzle 4 is moved above the center of the semiconductor wafer 3, and pure water is discharged from the pure water nozzle 4 to the center of the surface of the semiconductor wafer 3. The discharged pure water is spread from the center of the surface of the semiconductor wafer 3 toward the outer periphery by the rotation of the semiconductor wafer 3. Then, the pure water blown outward from the bevel portion 3a of the semiconductor wafer 3 by the centrifugal force is temporarily held and collected by the chemical solution holding portion 9, and adheres to the bevel portion 3a and the wafer outer peripheral back surface by the stored pure water. The removed chemical is removed. The rinsing time is about 1 to 300 seconds. The pure water temporarily stored in the chemical solution holding unit 9 is blown to the outside of the chemical solution holding unit 9.

次に、図4(C)に示すように、半導体ウェハのベベル部3aから薬液保持治具6を遠ざける。これにより、半導体ウェハ3のベベル部3aに薬液が一時的に溜まりベベル部3aを洗浄していた状態から、通常のリンス処理の状態に切り替えられる。このリンス処理の時間は1〜300秒程度とする。   Next, as shown in FIG. 4C, the chemical holding jig 6 is moved away from the bevel portion 3a of the semiconductor wafer. As a result, the state in which the chemical solution is temporarily accumulated in the bevel portion 3a of the semiconductor wafer 3 and the bevel portion 3a is cleaned is switched to the normal rinse treatment state. The rinsing time is about 1 to 300 seconds.

次に、図4(D)に示すように、純水ノズル4から純水を吐出するのを停止し、純水ノズル4を半導体ウェハ3の中央上方から外側に移動させ、半導体ウェハ3の回転速度を3000〜6000rpm程度まで高くし、半導体ウェハ3の乾燥処理を行う。その後、ウェハ保持機構1の回転を停止する。   Next, as shown in FIG. 4D, the discharge of pure water from the pure water nozzle 4 is stopped, the pure water nozzle 4 is moved from the upper center of the semiconductor wafer 3 to the outside, and the semiconductor wafer 3 is rotated. The speed is increased to about 3000 to 6000 rpm, and the semiconductor wafer 3 is dried. Thereafter, the rotation of the wafer holding mechanism 1 is stopped.

上記実施の形態によれば、図3〜図4(B)に示す工程で、半導体ウェハのベベル部3aに薬液保持治具6を近づけ、ベベル部3aを薬液保持部9によって覆うことにより、洗浄が困難な半導体ウェハのベベル部3aに付着したポリマー又は異物又はパーティクルを確実に除去することができる。   According to the above embodiment, in the steps shown in FIGS. 3 to 4B, cleaning is performed by bringing the chemical holding jig 6 close to the bevel portion 3a of the semiconductor wafer and covering the bevel portion 3a with the chemical holding portion 9. It is possible to reliably remove the polymer, foreign matter or particles adhering to the bevel portion 3a of the semiconductor wafer which is difficult to perform.

また、上記実施の形態では、ベベル部3aの洗浄として特別な洗浄フローが必要なく、従来の洗浄フローを用いても、ベベル部も十分に洗浄できる。また、半導体ウェハ3の表面を洗浄した薬液又は純水を薬液保持部9に溜めることでベベル部3aを洗浄するため、薬液又は純水を再利用することになる。従って、薬液又は純水のコストを低減することができる。   Moreover, in the said embodiment, a special washing | cleaning flow is not required as washing | cleaning of the bevel part 3a, and even if it uses the conventional washing | cleaning flow, a bevel part can also be fully wash | cleaned. Further, the chemical solution or pure water that has cleaned the surface of the semiconductor wafer 3 is stored in the chemical solution holding unit 9 to clean the bevel portion 3a, so that the chemical solution or pure water is reused. Therefore, the cost of the chemical solution or pure water can be reduced.

尚、本発明は上記実施の形態に限定されず、種々変更して実施することが可能である。例えば、半導体ウェハ3に付着したパーティクルを除去する目的でウェハ洗浄装置を用いる場合は、図4(B)に示す工程以降の純水リンス処理のみとすることも可能である。また、薬液保持治具6は、PFAやPTFEなどの耐薬液性や耐湿性に優れた材質を用いることが好ましいが、使用する薬液に対する耐性があれば、種々の材質を用いることも可能である。また、薬液保持治具6の形状に応じて、半導体ウェハ3のベベル部3aと薬液保持部9との距離、薬液又は純水の吐出量、半導体ウェハ3の回転速度などを適宜適切な条件に調整して実施することが好ましい。   The present invention is not limited to the above embodiment, and can be implemented with various modifications. For example, when a wafer cleaning apparatus is used for the purpose of removing particles adhering to the semiconductor wafer 3, it is possible to perform only pure water rinsing after the step shown in FIG. The chemical holding jig 6 is preferably made of a material having excellent chemical resistance and moisture resistance such as PFA and PTFE, but various materials can be used as long as they have resistance to the chemical used. . Further, depending on the shape of the chemical holding jig 6, the distance between the bevel portion 3a of the semiconductor wafer 3 and the chemical holding unit 9, the discharge amount of the chemical or pure water, the rotation speed of the semiconductor wafer 3, and the like are appropriately set appropriately. It is preferable to carry out the adjustment.

また、上記実施の形態では、薬液保持部9の内部形状を図5(A)に示すような断面コ字形としているが、これに限定されるものではなく、薬液又は純水を一時的に保持できる形状であれば、種々変更して実施することも可能であり、例えば図5(B)〜(F)に示すような形状とすることも可能である。   Moreover, in the said embodiment, although the internal shape of the chemical | medical solution holding | maintenance part 9 is made into the cross-sectional U shape as shown to FIG. 5 (A), it is not limited to this, A chemical | medical solution or a pure water is hold | maintained temporarily. Various shapes can be used as long as the shape can be changed. For example, the shapes shown in FIGS. 5B to 5F can be used.

図5(B)〜(F)は、薬液保持治具の変形例を示す断面図である。
図5(B)に示す薬液保持治具は、図5(A)に示す薬液保持治具と同一部分には同一符号を付し、異なる部分についてのみ説明する。
5B to 5F are cross-sectional views showing modifications of the chemical liquid holding jig.
In the chemical liquid holding jig shown in FIG. 5B, the same parts as those in the chemical liquid holding jig shown in FIG.

薬液保持部9aの内部形状は上面部材19aと下面部材19bとこれらを連結する連結部材19cからなる断面コ字形を有するものである。上面部材19aは上方に傾斜した内部形状を有しており、下面部材19bは下方に傾斜した内部形状を有している。   The internal shape of the chemical liquid holding part 9a has a U-shaped cross section composed of an upper surface member 19a, a lower surface member 19b, and a connecting member 19c for connecting them. The upper surface member 19a has an internal shape inclined upward, and the lower surface member 19b has an internal shape inclined downward.

図5(C)に示す薬液保持治具は、図5(B)に示す薬液保持治具と同一部分には同一符号を付し、異なる部分についてのみ説明する。
薬液保持部9bは、その上面部材19aの内面と下面部材19bの内面が互いに略平行とされており、連結部材19cには薬液又は純水を薬液保持部9bの外に排出するための開孔10a,10bが設けられている。
In the chemical solution holding jig shown in FIG. 5C, the same parts as those in the chemical solution holding jig shown in FIG.
The inner surface of the upper surface member 19a and the inner surface of the lower surface member 19b of the chemical liquid holding portion 9b are substantially parallel to each other, and the connecting member 19c has an opening for discharging the chemical liquid or pure water to the outside of the chemical liquid holding portion 9b. 10a and 10b are provided.

図5(D)に示す薬液保持治具は、図5(C)に示す薬液保持治具と同一部分には同一符号を付し、異なる部分についてのみ説明する。
薬液保持部9cの上面部材19aの内面には凸部からなる飛散防止部119aが設けられており、この飛散防止部119aは、薬液又は純水が薬液保持部の内部から半導体ウェハの表面へ飛散するのを防止するものである。また、薬液保持部9cの下面部材19bは図5(B)と同様の形状とされている。これにより、薬液保持部9cの内部から薬液又は純水を半導体ウェハ3の外周部の下方へ逃がし易くすることができる。
In the chemical solution holding jig shown in FIG. 5D, the same parts as those in the chemical solution holding jig shown in FIG.
The inner surface of the upper surface member 19a of the chemical solution holding portion 9c is provided with a scattering prevention portion 119a formed of a convex portion, and this scattering prevention portion 119a splashes the chemical solution or pure water from the inside of the chemical solution holding portion to the surface of the semiconductor wafer. This is to prevent this from happening. Further, the lower surface member 19b of the chemical liquid holding portion 9c has the same shape as that shown in FIG. Thereby, the chemical solution or pure water can be easily released from the inside of the chemical solution holding unit 9 c to the lower side of the outer peripheral portion of the semiconductor wafer 3.

図5(E)に示す薬液保持治具は、図5(D)に示す薬液保持治具と同一部分には同一符号を付し、異なる部分についてのみ説明する。
薬液保持部9dの連結部材19cには開孔が設けられていない。
In the chemical solution holding jig shown in FIG. 5E, the same parts as those in the chemical solution holding jig shown in FIG.
No opening is provided in the connecting member 19c of the chemical liquid holding part 9d.

図5(F)に示す薬液保持治具は、図5(E)に示す薬液保持治具と同一部分には同一符号を付し、異なる部分についてのみ説明する。
薬液保持部9eの上面部材19aは下方に傾斜した内面を有している。
In the chemical liquid holding jig shown in FIG. 5 (F), the same parts as those in the chemical liquid holding jig shown in FIG.
The upper surface member 19a of the chemical solution holding part 9e has an inner surface inclined downward.

上記の図5(B)〜図5(F)に示す変形例においても上記実施の形態と同様の効果を得ることができる。また、図5(A)〜(F)に示す薬液保持治具の形状を互いに組み合わせることも可能である。   In the modified examples shown in FIGS. 5B to 5F, the same effects as those of the above embodiment can be obtained. Moreover, it is also possible to combine the shape of the chemical | medical solution holding jig shown to FIG. 5 (A)-(F) mutually.

本発明の実施の形態によるウェハ洗浄装置によって半導体ウェハを洗浄する方法を示すものであって、(A)はウェハ洗浄装置を模式的に示す断面図、(B)はウェハ洗浄装置の平面図。BRIEF DESCRIPTION OF THE DRAWINGS The method to wash | clean a semiconductor wafer with the wafer cleaning apparatus by embodiment of this invention is shown, Comprising: (A) is sectional drawing which shows a wafer cleaning apparatus typically, (B) is a top view of a wafer cleaning apparatus. ウェハ洗浄装置を模式的に示すものであって、図1の次の工程を示す断面図。Sectional drawing which shows a wafer cleaning apparatus typically, Comprising: The next process of FIG. 半導体ウェハを洗浄する方法を示すものであって、(A)はウェハ洗浄装置を模式的に示す断面図、(B)はウェハ洗浄装置の平面図。表面実装基板に素子を実装する工程の流れを示す図。1A and 1B show a method for cleaning a semiconductor wafer, wherein FIG. 1A is a cross-sectional view schematically showing a wafer cleaning apparatus, and FIG. 1B is a plan view of the wafer cleaning apparatus. The figure which shows the flow of the process of mounting an element on a surface mounting board. (A)〜(D)は、半導体ウェハを洗浄する方法を示すものであってウェハ洗浄装置を模式的に示す断面図。(A)-(D) is a sectional view showing a method for cleaning a semiconductor wafer and schematically showing a wafer cleaning apparatus. (A)は、図1〜図4に示すウェハ洗浄装置の薬液保持治具を示す断面図、(B)〜(F)は薬液保持治具の変形例を示す断面図。(A) is sectional drawing which shows the chemical | medical solution holding jig of the wafer cleaning apparatus shown in FIGS. 1-4, (B)-(F) is sectional drawing which shows the modification of a chemical | medical solution holding jig.

符号の説明Explanation of symbols

1…ウェハ保持機構、2…回転軸、3…半導体ウェハ、3a…ベベル部、4…純水ノズル、5…薬液ノズル、6…薬液保持治具、7…矢印、8…支持部、9…薬液保持部、10a,10b…開孔、19a…上面部材、19b…下面部材、19c…連結部材、119a…飛散防止部   DESCRIPTION OF SYMBOLS 1 ... Wafer holding mechanism, 2 ... Rotating shaft, 3 ... Semiconductor wafer, 3a ... Bevel part, 4 ... Pure water nozzle, 5 ... Chemical solution nozzle, 6 ... Chemical solution holding jig, 7 ... Arrow, 8 ... Support part, 9 ... Chemical solution holding portion, 10a, 10b ... opening, 19a ... upper surface member, 19b ... lower surface member, 19c ... connecting member, 119a ... scattering prevention portion

Claims (9)

半導体ウェハを保持するウェハ保持機構と、
前記ウェハ保持機構を回転させる回転機構と、
前記ウェハ保持機構の上方に設けられ、薬液又は純水を前記半導体ウェハの表面に吐出する薬液ノズル又は純水ノズルと、
前記ウェハ保持機構の外側であって前記半導体ウェハのベベル部を覆うように配置され、前記ベベル部に前記薬液又は前記純水を一時的に保持する保持治具と、
を具備することを特徴とするウェハ洗浄装置。
A wafer holding mechanism for holding a semiconductor wafer;
A rotating mechanism for rotating the wafer holding mechanism;
A chemical nozzle or pure water nozzle that is provided above the wafer holding mechanism and discharges the chemical liquid or pure water to the surface of the semiconductor wafer;
A holding jig that is disposed outside the wafer holding mechanism and covers the bevel portion of the semiconductor wafer, and temporarily holds the chemical or pure water on the bevel portion;
A wafer cleaning apparatus comprising:
請求項1において、前記保持治具は薬液又は純水を一時的に保持する保持部を有しており、前記保持部の内部形状は断面がコ字形を有しており、前記保持部は上面部材と下面部材とこれらを連結する連結部材を有していることを特徴とするウェハ洗浄装置。   In Claim 1, the said holding jig has a holding part which hold | maintains a chemical | medical solution or a pure water temporarily, The cross-section has a U-shaped cross section, and the said holding part is an upper surface. A wafer cleaning apparatus comprising a member, a lower surface member, and a connecting member for connecting them. 請求項2において、前記上面部材の内面と前記下面部材の内面が互いに略平行であることを特徴とするウェハ洗浄装置。   3. The wafer cleaning apparatus according to claim 2, wherein an inner surface of the upper surface member and an inner surface of the lower surface member are substantially parallel to each other. 請求項2において、前記下面部材の内面が下方に傾斜していることを特徴とするウェハ洗浄装置。   3. The wafer cleaning apparatus according to claim 2, wherein an inner surface of the lower surface member is inclined downward. 請求項2又は4において、前記上面部材の内面が上方又は下方に傾斜していることを特徴とするウェハ洗浄装置。   5. The wafer cleaning apparatus according to claim 2, wherein an inner surface of the upper surface member is inclined upward or downward. 請求項2乃至5のいずれか一項において、前記上面部材の内面に、前記薬液又は前記純水が前記保持部の内部から前記半導体ウェハの表面へ飛散するのを防止するための凸部からなる飛散防止部が設けられていることを特徴とするウェハ洗浄装置。   6. The convex portion for preventing the chemical liquid or the pure water from scattering from the inside of the holding portion to the surface of the semiconductor wafer on the inner surface of the upper surface member according to claim 2. A wafer cleaning apparatus, comprising a scattering prevention unit. 請求項2乃至6のいずれか一項において、前記連結部材に、前記薬液又は前記純水を前記保持部の外に排出するための開孔が設けられていることを特徴とするウェハ洗浄装置。   7. The wafer cleaning apparatus according to claim 2, wherein the connecting member is provided with an opening for discharging the chemical solution or the pure water to the outside of the holding unit. 8. 半導体ウェハをウェハ保持機構によって保持し、前記ウェハ保持機構と共に前記半導体ウェハを回転させる工程と、
前記半導体ウェハの表面に薬液又は純水を供給する工程と、
前記半導体ウェハのベベル部を覆うように保持治具を配置し、前記薬液又は前記純水を前記保持治具に一時的に保持しながら前記半導体ウェハのベベル部を前記薬液又は前記純水によって洗浄する工程と、
を具備することを特徴とする半導体装置の製造方法。
Holding a semiconductor wafer by a wafer holding mechanism, and rotating the semiconductor wafer together with the wafer holding mechanism;
Supplying a chemical or pure water to the surface of the semiconductor wafer;
A holding jig is disposed so as to cover the bevel portion of the semiconductor wafer, and the bevel portion of the semiconductor wafer is cleaned with the chemical solution or the pure water while temporarily holding the chemical solution or the pure water on the holding jig. And the process of
A method for manufacturing a semiconductor device, comprising:
半導体ウェハをウェハ保持機構によって保持し、前記ウェハ保持機構と共に前記半導体ウェハを回転させる工程と、
前記半導体ウェハの表面に薬液を供給する工程と、
前記半導体ウェハのベベル部を覆うように保持治具を配置し、前記薬液を前記保持治具に一時的に保持しながら前記半導体ウェハのベベル部を前記薬液によって洗浄する工程と、
前記薬液の供給を停止し、前記半導体ウェハの表面に純水を供給し、前記純水を前記保持治具に一時的に保持しながら前記半導体ウェハのベベル部を前記純水によってリンスする工程と、
前記半導体ウェハのベベル部から前記保持治具を離し、前記純水の供給を停止し、前記半導体ウェハの表面を乾燥させる工程と、
を具備することを特徴とする半導体装置の製造方法。
Holding a semiconductor wafer by a wafer holding mechanism, and rotating the semiconductor wafer together with the wafer holding mechanism;
Supplying a chemical to the surface of the semiconductor wafer;
Placing a holding jig so as to cover the bevel portion of the semiconductor wafer, and cleaning the bevel portion of the semiconductor wafer with the chemical solution while temporarily holding the chemical solution in the holding jig;
Suspending the supply of the chemical solution, supplying pure water to the surface of the semiconductor wafer, and rinsing the bevel portion of the semiconductor wafer with the pure water while temporarily holding the pure water in the holding jig; ,
Separating the holding jig from the bevel portion of the semiconductor wafer, stopping the supply of the pure water, and drying the surface of the semiconductor wafer;
A method for manufacturing a semiconductor device, comprising:
JP2008057400A 2008-03-07 2008-03-07 Wafer cleaning equipment and production process of semiconductor device Withdrawn JP2009218249A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013071341A (en) * 2011-09-28 2013-04-22 Du Pont Mitsui Fluorochem Co Ltd Fluororesin molded article
JP2015220369A (en) * 2014-05-19 2015-12-07 東京エレクトロン株式会社 Substrate liquid treatment device, substrate liquid treatment method and storage medium
KR20210092297A (en) 2018-11-22 2021-07-23 샌트랄 글래스 컴퍼니 리미티드 Bevel treatment agent composition and manufacturing method of wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013071341A (en) * 2011-09-28 2013-04-22 Du Pont Mitsui Fluorochem Co Ltd Fluororesin molded article
US10265922B2 (en) 2011-09-28 2019-04-23 Chemours-Mitsui Fluoroproducts Co., Ltd. Fluoropolymer molded article
JP2015220369A (en) * 2014-05-19 2015-12-07 東京エレクトロン株式会社 Substrate liquid treatment device, substrate liquid treatment method and storage medium
KR20210092297A (en) 2018-11-22 2021-07-23 샌트랄 글래스 컴퍼니 리미티드 Bevel treatment agent composition and manufacturing method of wafer
US11817310B2 (en) 2018-11-22 2023-11-14 Central Glass Company, Limited Bevel portion treatment agent composition and method of manufacturing wafer

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