JP2016192538A - Substrate treatment method and substrate treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treatment method that is capable of properly removing particles adhering to the upper surface of a substrate and a substrate treatment device that executes the method.SOLUTION: The following processes are sequentially executed: a paddle formation process for forming a liquid film of a rinsing solution on the upper surface of a substrate W; a contact process for bringing a member 13 which is provided with a mesh member having multiple gap parts formed therein into contact with the liquid film; and a particle capturing process for causing side surfaces of the mesh member to capture the particles by creating convection inside the liquid film of the rinsing solution using interfacial free energy that is generated at three-phase interfaces where the rinsing solution, the atmosphere A, and inner edges of the mesh member of the member 13 intersect with one another.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing using a processing liquid for a substrate. Examples of substrates to be processed include semiconductor substrates, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photo A mask substrate is included. More specifically, the present invention relates to a substrate cleaning technique for removing foreign matter adhering to the surface of the substrate.

  Usually, the substrate is cleaned as follows. First, by supplying a chemical solution such as SC1 to the surface of the rotating substrate, particles adhering to the surface of the substrate are dissolved or lifted off and separated (chemical solution supplying step). Next, by supplying a rinse liquid such as pure water to the surface of the substrate, a liquid film of the rinse liquid is formed on the surface of the substrate, and the particles are dissolved in the liquid film of the rinse liquid (rinsing step). Finally, centrifugal force is applied to the liquid film of the rinsing liquid by rotating the substrate at a high speed, and the liquid film is removed from the surface of the substrate. Thus, the particles are removed from the surface of the substrate together with the rinse liquid (spin dry process).

JP 2003-209087 A

  FIG. 7 is a schematic view of the surface of the substrate before the start of the spin dry process. A convex circuit pattern W2 is formed on the upper surface W1 of the substrate W. A liquid film F of the rinse liquid is held on the upper surface W1. The liquid film F contains particles P separated from the upper surface W1 of the substrate W.

  FIG. 8 is a schematic view of the substrate W during the spin dry process. Centrifugal force acts on the upper layer region F2 of the liquid film, so that it is scattered and excluded from the substrate W. However, the lower layer region F1 in the vicinity of the substrate rotates in the same direction as the substrate W at substantially the same speed in conjunction with the substrate W. For this reason, the flow of the processing liquid does not occur in the lower layer region F1, and the processing liquid stays. As a result, the lower layer region F1 is not excluded from the substrate, and the particles P in the lower layer region F1 remain on the substrate W. Therefore, the substrate W cannot be cleaned with high accuracy.

  The present invention aims to solve the above problems. That is, it is an object of the present invention to provide a substrate processing method and a substrate processing apparatus capable of satisfactorily removing particles present in the liquid near the substrate.

  In order to solve the above problems, a substrate processing method according to a first aspect includes a processing liquid supply step of supplying a processing liquid to the one main surface of the substrate in a state where the substrate is supported with one main surface facing upward. A liquid film holding step for holding a liquid film of a processing solution on the one main surface of the substrate, one surface provided with a plurality of first openings, and one or more second communicating with the plurality of first openings. A contact step of bringing the one surface into contact with the upper surface of the liquid film among members having another surface provided with an opening.

  A substrate processing method according to a second aspect is the substrate processing method according to the first aspect, wherein, in the contacting step, two or more first openings among the plurality of first openings are formed on an upper surface of the liquid film. Contact.

  A substrate processing method according to a third aspect is the substrate processing method according to the first aspect or the second aspect, wherein the member is heated in the contact step.

  A substrate processing method according to a fourth aspect is the substrate processing method according to any one of the first to third aspects, wherein in the contacting step, the member is processed according to the thickness of the liquid film. Adjust the height position.

  A substrate processing apparatus according to a fifth aspect includes a substrate support unit that supports a substrate with one main surface facing upward, and a process of supplying a processing liquid to the one main surface of the substrate supported by the substrate support unit. A member having a liquid supply section, one surface provided with a plurality of first openings, and another surface provided with one or more second openings communicating with the plurality of first openings, and moving the member Forming a liquid film of the processing liquid on the one main surface by controlling the member moving part to be controlled and the processing liquid supply unit, and controlling the member moving part to contact one surface of the member with the upper surface of the liquid film A control unit.

  A substrate processing apparatus according to a sixth aspect is the substrate processing apparatus according to the fifth aspect, wherein the member includes a flat plate provided with a plurality of through holes penetrating in the thickness direction.

  A substrate processing apparatus according to a seventh aspect is the substrate processing apparatus according to the sixth aspect, wherein the member includes a mesh member having a plurality of gap portions communicating in the thickness direction.

  A substrate processing apparatus according to an eighth aspect is the substrate processing apparatus according to any one of the fifth to seventh aspects, further comprising an application unit that applies a voltage to the member, and the member Includes a heating element that generates heat in response to application of a voltage.

  A substrate processing apparatus according to a ninth aspect is the substrate processing apparatus according to any one of the fifth to eighth aspects, further comprising a member cleaning unit that cleans the member.

  A substrate processing method according to another aspect is a substrate processing method executed in a predetermined atmosphere, wherein a processing liquid is supplied to the upper surface of the substrate while the substrate is supported in a substantially horizontal state, and the substrate is supplied to the substrate. A processing liquid supply step for performing predetermined substrate processing, a liquid film holding step for holding a liquid film of the processing liquid on the upper surface of the substrate, and a flat plate for contacting a flat plate having a plurality of through holes formed in the liquid film And a contact process.

  According to this aspect, the flat plate is brought into contact with the liquid film in the flat plate contact step. At this time, convection from the vicinity of the substrate toward the liquid surface is formed by the interface free energy generated at the three-phase interface where the treatment liquid, the atmosphere, and the inner edges of the through holes intersect. By this convection, the processing liquid in the vicinity of the substrate moves to the surface of the liquid film and contacts the inner edge of the through hole. Thereby, the particles in the processing liquid are captured by the flat plate. In this way, it is possible to efficiently remove particles in the vicinity of the substrate that could not be eliminated by conventional spin dry.

  In the substrate processing method according to another aspect, in the flat plate contact step, the three-phase interface where the processing liquid, the atmosphere, and the inner edge of the through hole intersect with each other is generated at a plurality of locations on the surface of the liquid film. The substrate processing method is characterized in that a flat plate is brought into contact with the liquid film of the processing liquid.

  According to this aspect, since the three-phase interface is generated at a plurality of locations of the liquid film, the number of locations where the treatment liquid contacts the flat plate through-holes increases. As a result, particles can be captured more efficiently by the flat plate.

  The substrate processing method concerning another aspect is a substrate processing method characterized by heating the said flat plate in the said flat plate heating process.

  According to this aspect, since stronger convection can be generated in the liquid film, particles can be captured more efficiently.

  A substrate processing method according to another aspect is the substrate processing method, wherein, in the flat plate contact step, the position of the flat plate is set according to the thickness of the liquid film in the liquid film holding step.

  According to this aspect, it is possible to set the position of the flat plate in the flat plate contact step to a position corresponding to the thickness of the liquid film.

  A substrate processing apparatus according to another aspect is a substrate processing apparatus that performs substrate processing in a predetermined atmosphere, and includes a substrate support unit that supports the substrate in a substantially horizontal state, and a substrate that is supported by the substrate support unit. Processing liquid supply means for supplying a processing liquid to the upper surface of the substrate and forming a liquid film of the processing liquid for processing the substrate, a flat plate having a mesh member in which a plurality of through holes are formed, a position in contact with the liquid film, The flat plate moving means for moving the flat plate between the separation positions not in contact with the liquid film, and the liquid film of the treatment liquid is formed, and then the flat plate is moved to the liquid film by controlling the flat plate moving means. And a control means for controlling the particles to move to a position in contact with the surface of the mesh member and attach the particles to the side surface of the through hole of the mesh member.

  According to this aspect, the processing liquid in the vicinity of the substrate moves to the surface of the liquid film and contacts the inner edge of the through hole of the mesh member. Thereby, the particles in the processing liquid are captured by the flat plate. In this way, it is possible to efficiently remove particles in the vicinity of the substrate that could not be eliminated by conventional spin dry.

  According to each aspect of the invention, it is possible to satisfactorily remove particles near the substrate.

It is a schematic diagram which shows the structure of the substrate processing apparatus which concerns on one embodiment of this invention. 3 is a plan view of a member 13. FIG. It is typical sectional drawing of the member 13 seen from the III-III cross section in FIG. It is a flowchart for demonstrating a board | substrate cleaning process. It is a schematic diagram for demonstrating the effect | action of this invention. It is a top view of member 13A concerning a modification. It is a schematic diagram for demonstrating the subject of a prior art. It is a schematic diagram for demonstrating the subject of a prior art.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 1 includes a substrate rotating mechanism 2 for holding and rotating a substrate W as an example of a substrate in a substantially horizontal posture, and a chemical solution and an upper surface (front surface) of the substrate W held by the substrate rotating mechanism 2. It has a liquid supply mechanism 3 for selectively supplying a rinsing liquid and a housing 1a. The housing 1a includes a substrate rotation mechanism 2, a liquid supply mechanism 3, an arm 11 (described later), a nozzle moving mechanism 12 (described later), an arm 14 (described later), a member moving unit 15 (described later), and a member cleaning unit 17 (described later). ) Etc. are stored.

  As the substrate rotating mechanism 2, for example, a sandwiching type is adopted. Specifically, the substrate rotation mechanism 2 includes a motor 4, a spin shaft 5 integrated with a drive shaft of the motor 4, and a disc-shaped spin base 6 attached to the upper end of the spin shaft 5 almost horizontally. And a plurality of clamping members 7 provided at substantially equiangular intervals at a plurality of locations on the periphery of the spin base 6.

  The plurality of clamping members 7 can clamp the substrate W in a substantially horizontal posture. When the motor 4 is driven in this state, the substrate W can be rotated around the central axis of the spin shaft 5 while maintaining the substantially horizontal posture together with the spin base 6 by the driving force.

  The substrate rotation mechanism 2 functions as a substrate support unit that supports the substrate W with one main surface facing upward. The mode of supporting the substrate W may be a suction mode that vacuum-sucks the lower surface of the substrate W in addition to the sandwiching mode described above. Further, the posture of the substrate W to be supported is not limited to a strict horizontal posture, and may be a posture inclined from the horizontal. If the liquid film of the processing liquid is held on the upper surface of the substrate W, particles near the substrate W can be efficiently removed by the substrate processing method described later. For this reason, the tolerance of the inclination of the substrate W is determined according to the lyophilicity of the substrate W with respect to the processing liquid and the viscosity of the processing liquid.

  The liquid supply mechanism 3 includes a nozzle 8, a supply pipe 9a connected to the nozzle 8, a branch pipe 9b and a branch pipe 9c connected to the supply pipe 9a, and a valve 10b interposed in the middle of the branch pipe 9b. And a valve 10c interposed in the middle of the branch pipe 9c. A chemical liquid such as a cleaning liquid is supplied to the branch pipe 9b from a chemical liquid supply means (not shown). A rinsing liquid such as DIW is supplied to the branch pipe 9c from a rinsing liquid supply means (not shown). By opening one of the valve 10b and the valve 10c and closing the other, the chemical liquid and the rinse liquid can be selectively supplied toward the nozzle 8.

  In the present embodiment, the rinsing liquid is used as a processing liquid that comes into contact with the member 13 described later. Therefore, the liquid supply mechanism 3 functions as a processing liquid supply unit that supplies the processing liquid to the upper surface of the substrate W supported by the substrate support unit.

  The nozzle 8 is attached to the tip of the arm 11. The arm 11 extends horizontally above the substrate rotation mechanism 2. A nozzle moving mechanism 12 including a motor and the like is coupled to the arm 11. With the nozzle moving mechanism 12, the arm 11 can be swung in a horizontal plane around the axis set on the side of the substrate rotating mechanism 2. As the arm 11 swings, the nozzle 8 moves horizontally above the substrate rotation mechanism 2.

  A member 13 is provided above the substrate rotation mechanism 2. The member 13 is a circular member having an outer diameter smaller than that of the substrate W, and a large number of gaps 135 (FIG. 2 described later) are formed. A protrusion 133 is fixed to the upper surface of the member 13. The member 13 is detachably attached to the distal end portion of the arm 14 that extends horizontally above the substrate rotation mechanism 2 via the protrusion 133. A member moving unit 15 including a motor or the like is coupled to the arm 14. The member moving unit 15 can swing the arm 14 in a horizontal plane around an axis set to the side of the substrate rotation mechanism 2. By swinging the arm 14, the member 13 can be moved horizontally above the substrate rotation mechanism 2, and the standby position spaced laterally from the substrate rotation mechanism 2 and the center of the member 13 are on the spin base 6. It can be moved between a position coincident with the rotation center C of the substrate W.

  The arm 14 can be moved up and down by the member moving part 15. As the arm 14 moves up and down, the member 13 can be moved up and down, and the lower surface of the member 13 can be positioned at a height close to the upper surface of the substrate W. Thereby, the member 13 can be overlaid on the liquid film of the substrate W during the substrate processing.

  The substrate processing apparatus 1 has a member cleaning unit 17. The member cleaning unit 17 is a hollow housing for cleaning the member 13, and includes a loading / unloading port (not shown) for loading / unloading the member 13. A plurality of sprays 18 that discharge cleaning liquid toward the member 13 are disposed inside the member cleaning unit 17. The member moving unit 15 can move the member 13 from above the substrate rotating mechanism 2 to the inside of the member cleaning unit 17 by swinging and raising the arm 14. When the member 13 is stored in the member cleaning unit 17, the grip of the member 13 by the arm 14 is released.

  The substrate processing apparatus 1 includes a control unit 16 composed of a microcomputer. The control unit 16 controls driving of the motor 4, the nozzle moving mechanism 12, and the member moving unit 15 according to a predetermined program, and controls opening and closing of the valve 10b and the valve 10c. Further, the control unit 16 controls the timing of discharging the cleaning liquid from the spray 18.

  The control unit 16 is electrically connected to each unit included in the substrate processing apparatus 1, and controls the operation of each unit of the substrate processing apparatus 1 while executing various arithmetic processes. The control unit 16 is configured by a general computer in which, for example, a CPU, a ROM, a RAM, a storage device, and the like are interconnected via a bus line. The ROM stores basic programs and the like, and the RAM is used as a work area when the CPU performs predetermined processing. The storage device is configured by a non-volatile storage device such as a flash memory or a hard disk device. A program is stored in the storage device, and various functions are realized when a CPU as a main control unit performs arithmetic processing according to a procedure described in the program. The program is usually stored and used in a memory such as a storage device in advance, but is provided in a form (program product) recorded on a recording medium such as a CD-ROM or DVD-ROM or an external flash memory. (Or provided by downloading from an external server via a network) and may be additionally stored in a memory such as a storage device. Note that some or all of the functions realized in the control unit 16 may be realized in hardware by a dedicated logic circuit or the like.

  In the control unit, an input unit, a display unit, and a communication unit are also connected to the bus line. The input unit includes various switches, a touch panel, and the like, and receives various input setting instructions from an operator. The display unit includes a liquid crystal display device, a lamp, and the like, and displays various types of information under the control of the CPU. The communication unit has a data communication function via a LAN or the like.

  In a paddle formation step S3 and a contact step S4 described later, the control unit 16 controls the liquid supply mechanism 3 to form a liquid film of the processing liquid on the upper surface of the substrate W, and controls the member moving unit 15 to control the member 13 The lower surface is brought into contact with the upper surface of the liquid film of the processing liquid.

  FIG. 2 is a plan view schematically showing the configuration of the member 13. The member 13 includes a circular frame body 131 in a plan view, a support portion 132 disposed inside the frame body 131 so as to be orthogonal to the radial direction of the frame body 131, a projection 133 fixed to the support portion 132, a frame The mesh member 134 is supported by the support portion 132 inside the body 131. The mesh member 134 is formed by intersecting a plurality of bars 134a.

  FIG. 3 is a schematic cross-sectional view of the member 13 viewed from the III-III cross section in FIG. Each bar 134a is rectangular in cross-sectional view and has a side surface 134b. The side surface 134b is used when capturing particles in the liquid film on the substrate W. The side surface 134b is desirably hydrophilic so that particles can be captured well. The frame 131 is also rectangular in cross-sectional view and has a side surface 131b. The support portion 132 is also rectangular in cross-sectional view and has a side surface 132b. The side surface 131b of the frame 131 and the side surface 132b of the support portion 132 are also used for capturing particles in the same manner as the side surface 134b of the bar 134a. However, below, the side surface 134b of the bar 134a is used for capturing particles. An aspect is explained in full detail.

  The member 13 has a lower surface provided with a plurality of first openings and an upper surface provided with a plurality of second openings communicating with the plurality of first openings. A plurality of gaps 135 are provided between the plurality of first openings and the plurality of second openings, respectively. Specifically, a location surrounded by the adjacent bars 134a and 134a, a location surrounded by the bars 134a and the frame 131, a location surrounded by the bars 134a and the support portion 132, and the bar 134a A space 135 is formed between the upper surface and the lower surface of the member 13 at a location surrounded by the frame 131 and the support portion 132.

  As can be seen from FIG. 3, the width of the frame body 131 and the support portion 132 is larger than the width of the bar 134a, and the frame body 131 and the support portion 132 have higher rigidity than the bar 134a. And the projection part 133 is attached to the support part 132 with such high rigidity. For this reason, even when the protrusion 133 is attached to the arm 14 and the member 13 is moved, the member 13 is hardly deformed.

  FIG. 4 is a flowchart when the substrate processing according to the present embodiment is performed. It is assumed that the substrate W is already fixed to the spin base 6 and that the member 13 is located at a standby position separated from the upper side of the substrate W.

  First, the control part 16 performs chemical | medical solution process S1. Specifically, the control unit 16 rotates the substrate W at a predetermined chemical solution processing speed (for example, 1000 rpm). At the same time, the nozzle moving mechanism 12 is controlled to move the arm 11 to move the nozzle 8 to a position immediately above the rotation center C of the substrate W. In this state, the valve 10b is opened. Accordingly, the chemical solution is supplied from the nozzle 8 toward the rotation center C of the substrate W. The supplied chemical solution spreads from the rotation center C of the substrate W toward the periphery of the substrate W by centrifugal force, and the entire upper surface of the substrate W is processed with the chemical solution.

  After a predetermined time has elapsed from the start of the chemical liquid processing S1, the control unit 16 executes a rinsing processing step S2. Specifically, the control unit 16 closes the valve 10b and opens the valve 10c. Accordingly, the rinse liquid is supplied from the nozzle 8 toward the rotation center C of the substrate W. The supplied rinsing liquid diffuses from the rotation center C of the substrate W toward the peripheral edge of the substrate W and scatters from the peripheral edge of the substrate W to the outside. As a result, the chemical liquid that has adhered to the upper surface of the substrate W is replaced with the rinse liquid.

  The rinse treatment step S2 corresponds to a treatment liquid supply step for supplying a treatment liquid to the one principal surface of the substrate W in a state where the substrate W is supported with one principal surface facing upward.

  After completion of the rinsing process S2, the control unit 16 starts the paddle formation process S3. That is, the motor 4 is controlled to decelerate and stop the rotation of the substrate W. Alternatively, the speed is reduced to a rotational speed (for example, 10 rpm) that can be equated with the stop. The controller 16 continues to supply the rinse liquid to the rotation center C of the substrate W. As a result, the rinse liquid stays on the upper surface of the substrate W due to the surface tension of the rinse liquid, and a paddle-like liquid film is formed. After the liquid film is formed on the upper surface of the substrate W, the controller 16 closes the valve 10c to stop the supply of the rinsing liquid to the substrate W.

  Thus, the paddle formation step S3 corresponds to a liquid film holding step for holding a liquid film of the processing liquid on the upper surface of the substrate W.

  Next, the control part 16 performs contact process S4. Specifically, the control unit 16 controls the member moving unit 15 to horizontally move the arm 14 until the member 13 is positioned immediately above the substrate W while maintaining the paddle-like liquid film on the upper surface of the substrate W. . Next, the control unit 16 controls the member moving unit 15 to lower the arm 14 to a height at which the lower surface of the member 13 contacts the upper surface of the liquid film on the substrate W.

  FIG. 5 is a schematic diagram showing a state in which the member 13 is in contact with the liquid film F. A liquid film F is held on the substrate W. The liquid surface F12 of the liquid film F is exposed to the atmosphere A in the housing 1a of the substrate processing apparatus 1 in the gap portion 135 of the member 13. The lower surface of the member 13 is in liquid-tight contact with the liquid surface F12. The liquid level F12 is also in contact with the side surface 134b of the member 13. At the contact portion 134c between the liquid surface F12 and the side surface 134b, a three-phase interface is formed where the liquid film F, the atmosphere A immediately above the liquid film F, and the bar 134a intersect. Interfacial free energy is generated at the contact portion 134c. As a result, convection S is generated between the bar 134a and the substrate W, and a liquid flow from the liquid surface F12 toward the substrate W and a liquid flow from the substrate W toward the liquid surface F12 are formed. Due to this liquid flow, particles contained in the processing liquid in the vicinity of the upper surface of the substrate W move toward the liquid surface F12 and are contacted and captured at the contact portion 134c of the side surface 134b. Further, as the rinsing liquid evaporates, the liquid level F12 descends as indicated by an imaginary line F11. Thereby, the particles captured on the side surface 134b are sequentially left behind on the side surface 134b and can be prevented from being taken in again into the liquid film F.

  Further, as described above, the member 13 is a circular member having an outer diameter smaller than the substrate W by a minute amount. For this reason, in contact process S4, all the some 1st opening which the member 13 has contacts the upper surface (liquid level F12) of the liquid film F, and the liquid level F12 reaches | attains the inner wall of all the cavity parts. As a result, the convection S is generated at all locations in the vicinity of the first opening, and the particles are captured particularly efficiently. Even if not all of the plurality of first openings are in contact with the liquid surface F12 as in the present embodiment, in the contact step S4, two or more first of the plurality of first openings of the member 13 are included. It is desirable that the opening contacts the liquid level F12. This is because the convection S is generated at two or more locations, and the particles are efficiently captured.

  The higher the temperature of the member 13 (for example, the bar 134a), the more the evaporation of the rinse liquid at the contact portion 134c is promoted. As a result, the liquid flow from the bottom to the top in the liquid film F can be made stronger, so that the amount of particles captured by the side surface 134b can be increased. Therefore, in the contact step S4 and the particle capturing step S5, it is desirable to maintain the bar 134a at a temperature higher than room temperature by heating.

  For example, when the member 13 includes a heating element that generates heat in response to application of a voltage, the member 13 is heated by applying a voltage to the member 13 by an application unit (not shown). As a structure of such a member 13, the structure in which the member 13 contains a heating wire is mentioned.

  Further, when the hydrophobicity of the upper surface of the substrate W is low (that is, when the hydrophilicity is high), the liquid film F becomes thin. Conversely, when the hydrophobicity is high (that is, when the hydrophilicity is low), the liquid film F becomes thick. . Therefore, in the contact step S4, the height position of the member 13 may be determined according to the hydrophobicity of the substrate W. Specifically, when the hydrophobicity of the upper surface of the substrate W is low, the height of the member 13 is set low. Conversely, when the hydrophobicity is high, the height of the member 13 is set high. Thus, in the contact step S4, the height position of the member 13 is adjusted according to the thickness of the liquid film F. Further, when the thickness of the liquid film F varies during the contact step S4 and the particle capturing step S5, the height position of the member 13 may be adjusted according to the variation of the thickness of the liquid film F.

  Next, the control part 16 performs member removal process S6. That is, the control unit 16 controls the member moving unit 15 to raise the arm 14. As a result, the member 13 is detached from the liquid surface F12. Next, the control unit 16 controls the member moving unit 15 to rotate the arm 14 to move the member 13 from a position directly above the substrate W.

  Next, the control part 16 performs member cleaning process S7. That is, the control unit 16 controls the member moving unit 15 to raise and lower and rotate the arm 14 to store the member 13 in the member cleaning unit 17. Then, a predetermined cleaning fluid such as a cleaning liquid is sprayed from the spray 18 toward the member 13 to remove particles adhering to the member 13 during the particle capturing step S5. In addition, you may dry the member 13 after washing | cleaning inside the member washing | cleaning part 17. FIG.

  Subsequent to the member cleaning step S7 or in parallel with the member cleaning step S7, the control unit 16 executes the spin dry step S8. That is, the control unit 16 controls the motor 4 to rotate the spin base 6 at a high speed. As a result, the liquid film F held on the substrate W is scattered by centrifugal force and is collected in a cup (not shown) surrounding the spin base 6. As described above, even if spin drying is performed, it is difficult to remove the liquid film region (lower layer region F1) near the substrate W by scattering from the substrate W. However, in this embodiment, the spin drying step S8 is performed. Before executing the particle capturing step S5. Thereby, the particles contained in the lower layer region F1 are removed from the substrate W. For this reason, even if the rinse liquid in the lower layer region F1 remains on the substrate W after the spin dry step S8, the residual liquid contains almost no particles. Therefore, particles do not remain on the upper surface of the substrate W. Thereby, high substrate cleaning performance can be realized.

  In the above-described embodiment, the particle capturing step S5 is executed only once. However, the steps from the paddle formation step S3 to the member removal step S6 may be repeatedly executed. By doing so, particles can be removed from the liquid film F held on the substrate W a plurality of times. Thereby, the amount of particles contained in the liquid film F can be further reduced. As a result, the cleaning performance of the substrate can be improved.

  In the above-described embodiment, the contact process S4 and the particle capturing process S5 are performed with the member 13 held by the arm 14. However, a fixing member for fixing the member 13 may be provided on the spin base 6 separately from the clamping member 7 for fixing the substrate W. Accordingly, the member 13 can be detached from the arm 14 and fixed on the spin base 6 in the contact step S4. And particle capture process S5 can be performed in the state where member 13 was left on spin base 6.

  Further, the rinsing liquid may be supplied from the nozzle 8 toward the liquid film F in parallel with the particle capturing step S5. Further, the rotation speed of the substrate W may be varied during the particle capturing step S5. By adding such a process, the liquid film F can be vibrated during the execution of the particle capturing process S5. Thereby, particles existing in the vicinity of the substrate W can be efficiently attached to the side surface 134b of the mesh member 134.

  In the above-described embodiment, the mode in which the member 13 has the lower surface provided with the plurality of first openings and the upper surface provided with the plurality of second openings communicating with the plurality of first openings has been described. It is not something that can be done. The member only needs to have one surface provided with a plurality of first openings and another surface provided with one or more second openings communicating with the plurality of first openings, and is different from the above embodiment. It may be a configuration.

  For example, the member has one surface provided with a plurality of first openings and another surface provided with one second opening communicating with the plurality of first openings, and a gap portion branched into the inside is formed. May be.

  As another example, the member has one surface (for example, a lower surface) provided with a plurality of first openings and another surface (an upper surface or a top surface) provided with one second opening communicating with the plurality of first openings. A plurality of surfaces such as side surfaces).

  Moreover, although the said embodiment demonstrated the aspect with the flat shape of the lower surface (one surface which contacts a process liquid among members), it is not restricted to this. The shape of the lower surface of the member may be an uneven shape or a curved shape.

  FIG. 6 is a plan view of a member 13A according to a modification. Although the said embodiment demonstrated the aspect which is the mesh member 134 in which the member 13 has the several space part 135 connected in the thickness direction, it is not restricted to this. As in this modification, the member 13A may be a flat plate 139 (so-called punching plate) having a plurality of through holes 135A penetrating in the thickness direction. Further, as in this modification, the outer shape of the member 13A in plan view may be rectangular.

  The present invention can be effectively used for processing a substrate.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Substrate rotation mechanism 3 Liquid supply mechanism 4 Motor 5 Spin shaft 6 Spin base 7 Nipping member 8 Nozzle 11, 14 Arm 12 Nozzle moving mechanism 13, 13A Member 133 Protruding part 134 Mesh member 134a Bar 134b Side surface 134c Contact location 135 void portion 135A through hole 139 flat plate 15 member moving portion 16 control portion 17 member cleaning portion 18 spray F liquid film F12 liquid level S convection W substrate

Claims (9)

A treatment liquid supply step of supplying a treatment liquid to the one principal surface of the substrate in a state where the substrate is supported with one principal surface facing upward;
A liquid film holding step of holding a liquid film of a processing liquid on the one main surface of the substrate;
Among members having one surface provided with a plurality of first openings and another surface provided with one or more second openings communicating with the plurality of first openings, the one surface is an upper surface of the liquid film. A contact process for contacting
A substrate processing method. The substrate processing method according to claim 1,
In the contacting step, the substrate processing method, wherein two or more first openings of the plurality of first openings are in contact with an upper surface of the liquid film. The substrate processing method according to claim 1 or 2, wherein
The substrate processing method which heats the said member in the said contact process. A substrate processing method according to any one of claims 1 to 3, comprising:
The substrate processing method which adjusts the height position of the said member according to the thickness of the said liquid film in the said contact process. A substrate support part for supporting the substrate with one principal surface facing upward,
A processing liquid supply unit that supplies a processing liquid to the one main surface of the substrate supported by the substrate support;
A member having one surface provided with a plurality of first openings and another surface provided with one or more second openings communicating with the plurality of first openings;
A member moving unit for moving the member;
A control unit that controls the processing liquid supply unit to form a liquid film of the processing liquid on the one main surface, and controls the member moving unit to bring one surface of the member into contact with the upper surface of the liquid film;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 5,
The said member is a substrate processing apparatus containing the flat plate in which the some through-hole penetrated in the thickness direction was provided. The substrate processing apparatus according to claim 6,
The substrate processing apparatus, wherein the member includes a mesh member having a plurality of voids communicating in the thickness direction. A substrate processing apparatus according to any one of claims 5 to 7,
An application unit for applying a voltage to the member;
Further comprising
The substrate processing apparatus, wherein the member includes a heating element that generates heat in response to application of a voltage. A substrate processing apparatus according to any one of claims 5 to 8,
A member cleaning section for cleaning the member;
A substrate processing apparatus further comprising:

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