KR20170056067A - Method of Cultivating Soybean Sprouts using Water treated with Plasma - Google Patents

Abstract

The present invention relates to a method for cultivating bean sprouts using plasma discharge water, which comprises the following steps: producing the plasma discharge water by discharging plasma in water; and cultivating the bean sprouts by using produced plasma discharge water as cultivation process water for bean sprout cultivation. The present invention can provide the method for cultivating bean sprouts, which allows cultivation water to be circulated and used by lowering the degree of contamination of bean sprout cultivation water and preventing proliferation of microorganisms, and from the method for cultivating bean sprouts, the concentration of bioactive substances of the bean sprouts can be increased, and the growth of the bean sprouts can be improved.

Description

TECHNICAL FIELD The present invention relates to a method for cultivating soybean sprouts using plasma discharge water,

The present invention relates to a method for growing bean sprouts using plasma discharge water, and more particularly, to a method for cultivating bean sprouts using plasma discharge water, The present invention relates to a method for growing bean sprouts using plasma discharge water.

Traditional methods of growing bean sprouts utilize a variety of active ingredients that are released from bean sprouts by reusing the water used to produce bean sprouts. Since there is an endogenous substance which suppresses the occurrence of bean sprouts in the active ingredient, it is possible to exclude the use of pesticides (growth regulators, indole bean) used for promoting the growth of bean sprouts at present and suppressing the occurrence of offspring, Consumer distrust can be solved.

When soybean sprouts are cultivated on commercial scale by using such a method, the density of pesticidal organic compounds or perishable microorganisms secreted from the growing bean sprouts is increased, which causes the spoilage of cultivated bean sprouts to be promoted or the cultivation water becomes excessively turbid. In order to solve this problem, in a manufacturing plant that manufactures bean sprouts on a large scale, the bean sprouts are not circulated, but the fresh water is used as the cultivation water instead of the one used for cultivation. Also, it is impossible to stop the production line for one day due to pollution caused by cultivation process line of bean sprout and microorganism growth, so it is necessary to operate the production line 365 days a year, .

Therefore, there is a growing need for a cultivation method that can maintain the sensory quality of the bean sprouts traditionally cultivated while preventing contamination and microbial growth of the bean sprout cultivated water.

Meanwhile, bean sprouts contain physiologically active substances such as vitamin C, minerals and amino acids. In particular, aspartic acid contained in bean sprouts has the effect of eliminating hangover and restoring fatigue. GABA, one of the neurotransmitters, Prevention, mental stability, and stress relief.

However, conventional bean sprouts manufacturing techniques are often biased against technologies for preventing contamination of agricultural water or technologies for increasing the growth rate. Even if there is an attempt to effectively increase the concentration of nutrients contained in such bean sprouts, In order to enhance the functionality of the food, there has been known a technique of increasing the functionality of soybean sprouts as a food by adding various natural substances to the cultivation water and cultivating them.

Korea Patent Publication No. 2001-0002047 Korea Patent Publication No. 2006-0125096

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a bean sprouts cultivation method capable of circulating a cultivation water by lowering contamination degree of soybean sprout cultivation water and preventing microbial growth.

Another object of the present invention is to provide a method for growing bean sprouts that increases the concentration of a physiologically active substance contained in bean sprouts.

It is still another object of the present invention to provide a method for growing bean sprouts that improves the growth rate of bean sprouts.

In order to achieve the above object, the present invention provides a method of manufacturing a plasma display panel, comprising: discharging a plasma in water to produce plasma discharge water; And culturing the bean sprouts using the produced plasma discharge water as a cultivation process water for cultivation of bean sprouts. The present invention also provides a method for growing bean sprouts using plasma discharge water.

According to an aspect of the present invention, there is provided a plasma processing method comprising the steps of: (a) preparing a plasma discharge water by discharging plasma after putting water into a plasma apparatus; (b) growing the bean sprouts using the produced plasma discharge water as a cultivation process water for growing bean sprouts; (c) recovering the cultivation process water in the step (b), charging the plasma device, and discharging the plasma; (d) cultivating the bean sprouts using the discharge water in the step (c) as circulation growing water for cultivation of bean sprouts; And (e) repeating the steps (c) and (d).

In addition, the concentration of the physiologically active substance of bean sprouts is increased by the cultivation method.

The physiologically active substance may be at least one selected from the group consisting of vitamin C, aspartic acid, and gamma-aminobutyric acid (GABA).

The plasma discharge is characterized by using at least one plasma electrode selected from a dielectric barrier discharge (DBD), a radio frequency (RF), a corona, and a microwave type.

The plasma discharge is characterized in that the plasma electrode is placed in water and the discharge gas is discharged for 3 to 7 minutes at an air speed of 0.5 to 50 L / min.

The circulation rate of the plasma discharge water is circulated irrigation water for 1 to 5 minutes every 30 minutes to 2 hours.

In the case of DC during the plasma generation and discharge, the input voltage is 12 to 48 V and the output voltage is 2000 to 35000 V.

In the case of the AC generation during the plasma generation and discharge, the input voltage is 110 to 380 V and the output voltage is 2000 to 35000 V.

INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a bean sprout cultivation method capable of circulating a cultivated water by lowering contamination degree of bean sprout cultivated water and preventing microbial growth, and can increase the concentration of physiologically active substance of bean sprouts from the bean sprout cultivation method , The growth of bean sprouts can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic diagram of an apparatus for producing plasma discharge water for use as bean sprouts cultivated water. Fig.
FIG. 2 is a graph showing changes in the number of cultivated bean sprout cultured at 25 ° C. at room temperature.
FIG. 3 is a graph showing the change in the number of bacteria in the cultivated water grown with a bean sprout per day according to a plasma treatment time underwater.
FIG. 4 is a graph showing changes in the total number of cultivated cultivars when circulating water was circulated for 5 days in a control at 25 ° C at room temperature and when the cultivated water was supplied by plasma discharge in water twice a day.
FIG. 5 is a photograph of bean sprouts harvested by cultivating 100 beans of selected beans with tap water (a) or plasma water discharge water (b) for 5 days.
FIG. 6 is a photograph of bean sprouts harvested by cultivating 100 beans of selected beans by tap water (Control) or plasma in water for 5 days.

The present invention relates to a method for producing plasma discharge water, comprising the steps of: discharging plasma in water to produce plasma discharge water; And growing the bean sprouts using the produced plasma discharge water as a cultivation process water for growing bean sprouts.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention is applicable to cultivation of bean sprouts in a bean sprouts manufacturing plant. In particular, in a large-scale manufacturing plant, circulation of cultivated water can not be used due to contamination by cultivated water. The pollution degree of the cultivated water can be lowered and the increase of the microorganisms can be prevented thereby not only the above problem can be solved but also the concentration of various physiologically active substances contained in the cultured bean sprouts can be increased, Bean sprouts can be grown.

Since sprouts such as bean sprouts synthesize various nutrients and physiologically active substances for growth at the time of sprouting from the seeds, it is possible to increase the concentration of synthesized physiologically active substances by appropriately controlling cultivation conditions.

In one embodiment of the present invention, the physiologically active substance that can be increased from the cultivation method may be various physiologically active substances contained in bean sprouts, including various kinds of amino acids, vitamins and minerals , Such as aspartic acid, glutamic acid, asparagine, serine, glutamine, histidine, glycine, threonine, arginine, alanine, gamma-amino butyric acid (GABA), tyrosine, valine, methionine, tryptophan, phenylalanine, isoleucine, leucine, lysine , proline, vitamin C, and vitamin B1.

In one embodiment of the present invention, the concentration can be increased by the cultivation method The physiologically active substance is particularly vitamin C, aspartic acid or gamma-aminobutyric acid (GABA).

In an embodiment of the present invention, the plasma generating apparatus that can be used in the step of producing the discharge water using the plasma is not limited as long as it can perform plasma discharge by installing a plasma generating apparatus in water. By controlling the ratio of active species using plasma electrodes such as dielectric barrier discharge (DBD), radio frequency (RF), low frequency (LF), corona, microwave, In particular, it is preferable to use a dielectric barrier discharge (DBD) method.

In one embodiment of the present invention, a method of manufacturing a plasma discharge water using the DBD electrode is a method in which a plasma electrode is placed in water and a discharge gas is discharged for 3 to 7 minutes at an air velocity of 0.5 to 50 L / min A plasma discharge water can be produced.

In an embodiment of the present invention, the plasma discharge water may be circulated when used as cultivation water, and may be discarded after one use. Particularly, the plasma discharge water according to the cultivation method of the present invention can prevent pollution and microbial growth of cultivated water by plasma treatment, so that it can be used without contamination even when circulating water is circulated. Therefore, It is possible to circulate and cultivate the cultivated water to obtain various advantages by circulation cultivation.

As an embodiment of the present invention, the bean sprouts cultivation method for circulating the cultivated water may include the following constitutional steps.

(a) preparing a plasma discharge water by discharging plasma after putting water into a plasma apparatus;

(b) growing the bean sprouts using the produced plasma discharge water as a cultivation process water for growing bean sprouts;

(c) recovering the cultivation process water in the step (b), charging the plasma device, and discharging the plasma;

(d) cultivating the bean sprouts using the discharge water in the step (c) as circulation growing water for cultivation of bean sprouts; And

(e) repeating steps (c) and (d)

In the case of circulating the cultivated water as an embodiment of the present invention, the circulating rate of the cultivated water can be used within the circulating speed range used in culturing the existing soybean sprouts. For example, A method of circulating water for 1 to 5 minutes every 2 hours can be used.

In an embodiment of the present invention, the plasma generation discharge pressure is 12 to 48 V when the input voltage is DC, 110 to 380 V when the DBD electrode is AC, and the output voltage is 2000 to 35000 V when the DBD electrode is used , And the current is preferably less than 2A. When the voltage is lower than the above-mentioned voltage range, the concentration of the active species is low, which is undesirable.

Hereinafter, the present invention will be described in more detail with reference to Examples. It is to be understood by those skilled in the art that these embodiments are only for describing the present invention in more detail and that the scope of the present invention is not limited by these embodiments in accordance with the gist of the present invention .

[Example]

One) plasma Discharge number  Produce

a Plasma discharge method: Dielectric barrier discharge (DBD)

Use a dielectric quartz tube between the powered electrode and the ground electrode.

b. Plasma discharge gas: air (5 L / min)

c. Plasma treated cultivation water for cultivation of soybean sprouts Manufacturing method: Water and plasma discharge device are put into an acryl bath, and plasma discharge is performed for 5 minutes to produce bean sprout cultivation water.

1 is a schematic diagram of an apparatus for producing plasma discharge water for use as bean sprouts cultivated water.

Specific specifications of the above apparatus are as follows.

(1) Input voltage: 220 V (AC power)

(2) Output voltage: 18 kV

(3) Gas: Clean dry air

(4) Gas flow rate: 5 L / min

(5) Quartz tube diameter: 20 mm

(6) Powered electrode diameter: 7mm

(7) Powered electrode length: 360mm

(8) Powered electrode composition: Copper

(9) Ground electrode composition: Copper

(10) Tap water volume: 8L

(11) Dimensions of acryl bath: 450200155 mm ³

(12) Tap water temperature: 20 ° C

2) plasma Underwater discharge water  Sterilization effect of soybean sprout cultivation water

2 L of tap water was placed in an automatic grower of bean sprouts and set to circulate water for 1 minute every 30 minutes. Figure 2 shows the change in the number of cultivated water in the circulating water. The number of cultivated bacilli increased gradually with increasing cultivation time and increased to 7 log CFU / ml at 9 hours cultivation.

2 is a graph showing changes in the number of cultivated bean sprout cultured at 25 ° C at room temperature.

Fig. 3 shows the change in the number of cultivars cultivated with soybean sprouts per day according to the plasma treatment time of underwater discharge. The cultivation water increased to 7.4 log CFU / ml by one day cultivation and decreased to 5.2 log CFU / ml level by 1 minute plasma discharge. As the plasma treatment time increased, the total number of cultivated cells decreased and decreased to 3.1 log CFU / ml level at 5 min treatment time.

For the cultivation of bean sprouts, 100 bean sprouts were placed in an automatic grower, and the number of cultivation was set to be circulated one minute every 30 minutes. FIG. 4 is a graph showing changes in the total number of cultivated cultivars in the case where the culture solution was circulated for 5 days at 25 ° C at a control temperature and when the cultivated water was supplied by plasma discharge in water twice a day.

3) plasma Underwater discharge waterway  Characteristics of cultivated bean sprouts

The results of vitamin C content of soybean sprouts cultivated with tap water (control) and plasma water underwater were divided into cotyledons, hypocotyls and roots. The content of vitamin C in bean sprouts cultivated by plasma water discharge was higher than that of bean sprouts cultivated by tap water.

Tap water Underwater plasma treated water Cotyledon
Hypocotyl
Root 70.30
5.09
2.62 74.15 *
5.65 *
2.86

(Unit: mg / 100 g) ( P < 0.05)

Amino acid contents of cotyledon, dorsiflexion, and root of bean sprout cultivated with tap water (control) and plasma underwater discharge water were measured (Table 2). The contents of asparagine and GABA were higher in the cotyledon, axilla, and root of the bean sprouts grown by plasma water discharge than the control, respectively.

Cotyledon Hypocotyl Root Tap water underwater plasma treated water Tap water underwater plasma treated water Tap water underwater plasma treated water Aspartic acid
Glutamic acid
Asparagine
Serine
Glutamine
Histidine
Glycine
Threonine
Arginine
Alanine
GABA
Tyrosine
Valine
Methionine
Tryptophane
Phenylalanine
Isoleucine
Leucine
Lysine
Proline 0.5
2.6
31.8
1.6
0.4
2.9
0.2
0.7
3.3
0.8
2.1
0.2
1.1
0.1
1.4
2.0
0.8
0.6
0.3
0.5 0.5
3.0
40.6 *
1.9 *
0.4
3.3
0.2
0.9 *
4.6 *
0.9
2.5 *
0.2
1.3
0.2 *
1.7 *
2.6 *
1.0 *
0.8 *
0.4
0.7 0.6
0.5
108.7
7.5
3.1 *
9.2
0.4
4.7
0.3
5.3
1.2
0.2
14.1
0.3
3.1
8.1
7.5
2.4
1.6 *
2.3 0.6
0.5
120.1 *
7.9 *
2.9
9.7 *
0.4
4.9 *
0.3
5.2
1.4 *
0.3 *
14.9
0.3
3.4
8.7
7.7
2.3
1.3
2.1 1.0 *
0.7 *
75.6
3.0
2.4
5.9
0.3
2.9
0.5
1.8
1.6
0.2
5.3
0.2
2.0
1.4
2.4
1.1 *
0.3
0.9 * 0.8
0.5
77.2 *
2.9 *
2.7
5.5
0.3
2.7
0.4
1.7
1.7 *
0.2
4.8
0.1
2.1
1.3
2.2
0.9
0.2
0.6 Total   47.7    50.6  121.8   131.5  99.5   105.5

(Unit: mg / g) ( P < 0.05).

The bean sprouts weighed 100 lips in the shape, color and size of bean particles, and the weight of bean sprouts weighing 100 lips according to the number of cultivated plants (tap water, plasma underwater discharge water) after 5 days was measured and the results are shown in Table 3. As a result, the weight of bean sprouts cultivated with plasma water discharge water increased compared with that of tap water.

Tap water Plasma treated water 100-sprout weight 52.87 2.37 60.34 4.81 *

(Unit: g) ( P < 0.05).

FIG. 5 is a photograph of bean sprouts harvested by cultivating 100 beans of selected beans with tap water (a) or plasma water discharge water (b) for 5 days. The bean sprouts cultivated by the plasma underwater discharge were found to be longer in length and shorter than those in tap water.

FIG. 6 is a photograph of bean sprouts harvested by cultivating 100 beans of selected beans for 5 days by tap water treatment or plasma water treatment. The bean sprouts cultivated with plasma underwater discharge water can be seen to grow longer and more straight than when tap water is used as cultivated water.

Claims (9)

Discharging the plasma in water to produce a plasma discharge water; and
Culturing the bean sprouts using the produced plasma discharge water as the cultivation process water for growing the bean sprouts
Wherein the method comprises the steps of:
(a) preparing a plasma discharge water by discharging plasma after putting water into a plasma apparatus;
(b) growing the bean sprouts using the produced plasma discharge water as a cultivation process water for growing bean sprouts;
(c) recovering the cultivation process water in the step (b), charging the plasma device, and discharging the plasma;
(d) cultivating the bean sprouts using the discharge water in the step (c) as a circulating process water for cultivation of bean sprouts; and
(e) repeating steps (c) and (d)
Wherein the method comprises the steps of:
3. The method according to claim 1 or 2,
Wherein the concentration of the physiologically active substance of the bean sprouts is increased by the cultivation method.
The method of claim 3,
Wherein the physiologically active substance is at least one selected from the group consisting of vitamin C, aspartic acid, and gamma-aminobutyric acid (GABA).
3. The method according to claim 1 or 2,
The plasma discharge uses one or more plasma electrodes selected from a dielectric barrier discharge (DBD), a radio frequency (RF), a low frequency (LF), a corona, and a microwave type A method for culturing bean sprouts using plasma discharge water.
6. The method of claim 5,
Wherein the plasma discharge is performed by discharging the discharge gas at an air speed of 0.5 to 50 L / min for 3 to 7 minutes after inserting the plasma electrode into the water.
3. The method according to claim 1 or 2,
Wherein the circulating rate of the plasma discharge water is circulated for 1 to 5 minutes every 30 minutes to every 2 hours.
3. The method according to claim 1 or 2,
Wherein the input voltage is 12 to 48 V and the output voltage is 2000 to 35000 V in the case of DC during the plasma generation and discharge.
3. The method according to claim 1 or 2,
Wherein an input voltage is 110 to 380 V and an output voltage is 2000 to 35000 V in the case of AC during the plasma generation and discharge.

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