KR20170055858A - In-cell touch type liquid crystal display device and method of manufacturing the same - Google Patents

Abstract

The present invention relates to technology capable of solving an electronic short circuit between a sensing wiring and a pixel electrode caused by foreign substances, and a problem of losing the sensing wiring. The present invention forms a transparent conductive pattern and the pixel electrode which are separated to each other by patterning a transparent conductive layer, an insulating film, and a metal layer which are sequentially laminated through a single mask process; and an insulating pattern and the sensing wiring on an upper part of the transparent conductive pattern. The present invention further performs a dry etching process depending on use of the insulating film. The present invention is provided to further perform the dry etching process depending on the use of the insulating film by adding an ashing process for a photoresist pattern, thereby desirably separating the transparent conductive pattern and the pixel electrode by patterning a lower part of the transparent conductive layer to a desired form. The insulating pattern exists on the transparent conductive pattern separated from the pixel electrode. Therefore, the present invention definitely solves the electronic short circuit between the sensing wiring and the pixel electrode. The insulating film adheres to the lower part of the transparent conductive layer and an upper part of the metal layer with excellent adhesive strength. Therefore, the present invention effectively solves the problem of losing the sensing wiring by increasing the adhesive strength between the sensing wiring and a lower part of a lamination film.

Description

[0001] The present invention relates to an in-cell touch type liquid crystal display device and a manufacturing method thereof,

The present invention relates to an in-cell touch-type liquid crystal display device, and more particularly to an in-cell touch-type liquid crystal display device capable of solving the problem of electrical short circuit between a sensing wire and a pixel electrode due to a foreign object, And a manufacturing method thereof.

2. Description of the Related Art [0002] As an information society develops, there has been a growing demand for display devices for displaying images. Recently, liquid crystal display devices (LCDs), plasma display panels (PDPs) Various flat display devices such as an organic light emitting diode (OLED) have been utilized.

Of these flat panel display devices, liquid crystal display devices are widely used because they have advantages of miniaturization, weight reduction, thinness, and low power driving.

In recent years, a touch function has been added to a liquid crystal display device due to the spread of a smart phone or a tablet. In particular, in order to reduce the size of a liquid crystal display device, in-cell touch method.

In such an in-line touch type liquid crystal display device, a touch block arranged in a matrix form is defined in a display area, a common electrode functioning as a self-cap type touch electrode is arranged in units of touch blocks, A corresponding sensing wiring is connected to the electrode. A display period and a touch sensing period are alternated with respect to the liquid crystal display device constructed as described above. A common voltage is output to the sensing wiring and applied to the corresponding sensing electrode during the touch sensing period, A touch driving signal for touch sensing is output to the sensing wiring and applied to the corresponding touch electrode.

In the conventional liquid crystal display device, the pixel electrode and the sensing wiring are formed by the same mask process in order to reduce the mask process in the manufacture of the array substrate, and in this regard, FIGS. 1A and 1B can be referred to.

1A and 1B are cross-sectional views illustrating a process of forming a sensing wire and a pixel electrode of a conventional in-cell touch-type liquid crystal display device. In FIGS. 1A and 1B, for convenience of explanation, the configuration related to the formation of the pixel electrode and the sensing wiring is mainly shown.

1A, a transparent conductive layer 60 such as ITO and a metal layer 80 made of a metal material having a low resistance characteristic such as copper (Cu) are deposited on a substrate 11, The first and second photoresist patterns 91 and 92 are formed on the metal layer 80. At this time, the first photoresist patterns 91 and 92 are located corresponding to the regions where the sensing wiring is formed, the second photoresist patterns 92 are located corresponding to the regions where the pixel electrodes are formed, The pattern 92 has a lower thickness than the first photoresist pattern 91.

A first wet etching process is performed on the metal layer 80 using the first and second photoresist patterns 91 and 92 formed as described above as an etching mask.

1B, the metal layer 80 located in the exposed region between the first and second photoresist patterns 91 and 92 is removed and the first and second metal patterns 81 and 82, 82 are formed. Next, an ashing process is performed to remove the second photoresist pattern 91 having a low thickness. Next, a second wet etching process is performed on the transparent conductive layer 60 to form the transparent conductive pattern 61 and the pixel electrode 62.

Thereafter, the third wet etching process is performed on the first and second metal patterns 81 and 82 to remove the exposed second metal pattern 82 and the first metal pattern 81 A sensing wiring 81 is formed.

However, the gap between the sensing wiring 81 and the pixel electrode 62 is considerably narrowed to about 2-3 .mu.m so that the sensing wiring 81 and the pixel electrode 62 are electrically short-circuited by foreign matter.

Referring to FIG. 2, if the distance between the first and second photoresist patterns 91 and 92 is very narrow, foreign matter generated during the first wet etching process is not removed in the spacing space It is possible to remain in the state. In this case, the transparent conductive layer 61 under the sensing wiring 81 is not removed by the second wet etching process because the transparent conductive layer 60 below the transparent conductive layer 61 is not removed by the remaining foreign matter, So that they are integrally connected. This causes a problem that the sensing wiring 81 and the pixel electrode 62 are electrically short-circuited.

In general, the adhesion between the transparent conductive layer 60 and the metal layer 80 is poor, so that the metal layer 80 is excited from the transparent conductive layer 60. Accordingly, when the etching process for the metal layer 80 proceeds, the etching liquid penetrates between the transparent conductive layer 60 and the metal layer 80, resulting in the problem that the sensing wiring 81 is separated from the transparent conductive layer 60 .

Disclosure of the Invention Problems to be Solved by the Invention There is a problem to be solved by the present invention to solve the problem of the electrical short between the sensing wiring and the pixel electrode due to the foreign object and the problem of loss of the sensing wiring.

According to an aspect of the present invention, there is provided a display device including a transparent conductive pattern sequentially stacked in the same shape, a first insulating pattern, a sensing wiring, A pixel electrode, and a touch electrode disposed on each of the touch blocks and connected to the sensing line.

Meanwhile, the in-cell touch-type liquid crystal display device may further include a second insulation pattern having the same shape as the pixel electrode and separately located in the same layer as the first insulation pattern.

The transparent conductive pattern and the first insulating pattern may be configured to have a wider width than the sensing wiring.

In addition, a protective film having a touch contact hole to which the touch electrode and the sensing wiring are connected may be further provided.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming first and second photoresist patterns on a transparent conductive layer, an insulation layer, and a metal layer sequentially deposited on a substrate; Forming a first and a second metal patterns on the first and second metal patterns, performing a dry etching process to form first and second insulating patterns, performing an ashing process to remove the second photoresist pattern, Forming a transparent conductive pattern and a pixel electrode under each of the first and second insulating patterns, forming a sensing wiring by performing a third etching process, and forming a sensing wiring, which is connected to the sensing wiring, The method comprising the steps of: forming a liquid crystal layer on a substrate;

Meanwhile, the manufacturing method of an in-cell touch-type liquid crystal display device may further include forming a protective film having a touch contact hole to which a touch electrode and a sensing wiring are connected.

In the present invention, an insulating pattern and a sensing wiring can be formed on a transparent conductive pattern and a pixel electrode separated from each other by patterning a transparent conductive layer, an insulating film, and a metal layer which are sequentially stacked through a single mask process, Depending on the use of the insulating film, a dry etching process is further performed.

As described above, in addition to the ashing process for the photoresist pattern, the dry etching process according to the use of the insulating film is further performed, so that foreign substances generated during the metal layer etching process can be effectively removed, and the lower transparent conductive layer is patterned into a desired shape, Pattern and a pixel electrode. In addition, since the insulating pattern exists on the transparent conductive pattern separated from the pixel electrode, the sensing wiring is electrically insulated from the pixel electrode. Thus, the problem of electrical short-circuiting between the sensing wiring and the pixel electrode can be reliably prevented.

In addition, since the insulating film is excellent in adhesion to the lower transparent conductive layer and the upper metal layer due to its characteristics, the adhesion between the sensing wiring and the lower laminated film is improved, and the sensing wiring is effectively removed.

FIGS. 1A and 1B are cross-sectional views illustrating a process of forming a sensing line and a pixel electrode of a conventional in-cell touch-type liquid crystal display device.
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an in-line touch type liquid crystal display device.
3 is a view schematically illustrating an in-cell touch-type liquid crystal display device according to an embodiment of the present invention.
4 is a plan view showing a pixel region in a touch block of an array substrate of a liquid crystal display device according to an embodiment of the present invention.
5 is a cross-sectional view taken along line VV in Fig.
6A to 6F are cross-sectional views illustrating a method of manufacturing an array substrate for a liquid crystal display according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

3 is a schematic view illustrating an in-cell touch-type liquid crystal display according to an embodiment of the present invention.

Referring to FIG. 3, the liquid crystal display 100 according to the present embodiment is an in-cell touch type liquid crystal display device in which a touch electrode 201, which is a self-cap type touch element, is formed in a liquid crystal display device, i.e., a liquid crystal panel. Such a liquid crystal display device 100 may include, for example, a color filter substrate, a liquid crystal layer positioned between the array substrate and the color filter substrate as an opposing substrate facing the array substrate and the array substrate.

In this case, the touch electrode 201, that is, the common electrode 201 and the pixel electrode (see 162 in FIG. 4) disposed in the pixel region, The liquid crystal layer can be driven during a display period formed on the substrate and displaying an image. The liquid crystal display 100 having the touch electrode 201 may be configured as an AH-IPS (Advanced High Performance In-Plane Switching) scheme, which is a fringe field scheme.

In a display region for displaying an image of the liquid crystal display device 100, pixel regions are arranged in a matrix form along the row direction and the column direction.

On the other hand, in the display area of the liquid crystal display device 100, a plurality of touch blocks TB may be arranged in a matrix form along the row direction and the column direction. At this time, each touch block TB is composed of a plurality of pixel regions neighboring in the row direction and the column direction as a unit group.

A touch electrode 201 is formed on an array substrate of the liquid crystal display device 100 in units of touch blocks (TB). The touch electrode 201 formed on each touch block TB is separated from the touch electrode 201 of the neighboring touch block TB and is patterned in a spaced apart form. That is, the touch electrodes 201 formed in neighboring touch blocks are electrically disconnected from each other.

A sensing wiring 181 connected to each touch block TB is formed on the array substrate of the liquid crystal display device 100 along one direction. For example, the sensing wiring 181 may be formed along the column direction which is the extending direction of the data wiring (see 141 in FIG. 4). The sensing wiring 181 is connected to the touch electrode 201 of the corresponding touch block TB through the touch contact hole CH1 to transmit a driving signal.

In this regard, a common voltage is applied to the sensing wiring 181 and transmitted to the corresponding touch electrode 201 during each frame as a display period. Accordingly, an electric field is generated between the pixel electrode and the touch electrode 201 in each pixel region of the corresponding touch block TB to drive the liquid crystal, thereby displaying an image.

On the other hand, a touch driving signal of a pulse waveform is applied to the sensing wiring 181 and transmitted to the touch electrode 201 during a blank interval between neighboring frames as a touch sensing interval between display periods. In addition, a sensing signal corresponding to the capacitance change amount of each touch block TB depending on the presence or absence of the touch is detected through the touch electrode 201 and applied to the corresponding sensing wiring 181. Thus, it is possible to determine whether or not the user touches the sensing signal.

As described above, the touch electrode 201 formed on the touch block TB functions as a common electrode 201 for generating an electric field and an electrode for sensing a user's touch, thereby forming a thin in-cell touch-type liquid crystal display device 100. [ . ≪ / RTI >

Hereinafter, the structure of the array substrate of the liquid crystal display device according to the present embodiment will be described in detail with reference to FIGS. 4 and 5. FIG.

FIG. 4 is a plan view showing pixel regions in a touch block of an array substrate of a liquid crystal display device according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along a line V-V in FIG. 4, the semiconductor layer 131 under the source and drain electrodes 143 and 145 and the semiconductor pattern 132 under the data line 141 are omitted for convenience of explanation.

4 and 5, on the substrate 111 of the liquid crystal display 100, a plurality of gate wirings 121 extending along the row direction as a first direction are formed. A gate insulating film 130 is formed on the gate wiring 121 and a plurality of data wirings 141 is formed on the gate insulating film 130 as a second direction extending along the column direction.

A plurality of pixel regions P arranged in a matrix form are defined by the gate wirings and data wirings 121 and 141 intersecting with each other in this manner.

In each pixel region P, a thin film transistor T connected to the gate and data lines 121 and 141 is formed.

The thin film transistor T includes a gate electrode 123 connected to the gate wiring 121, a semiconductor layer 131 located on the gate insulating film 130 on the gate electrode 123, And source and drain electrodes 143 and 145 spaced apart from each other. Here, the source electrode 143 is connected to the data line 141. A semiconductor pattern 132 extending along the data line 141 and connected to the semiconductor layer 131 may be formed under the data line 141.

A first passivation layer 150 may be formed on the source and drain electrodes 143 and 145. The first passivation layer 150 may be formed of an organic insulating material such as photo acryl (PAC), but is not limited thereto. At this time, when the first protective layer 145 is formed of an organic insulating material, the substrate surface can be substantially planarized. A drain contact hole CH2 exposing the drain electrode 145 is formed in the first passivation layer 150. [

A pixel electrode 162 connected to the drain electrode 145 of the thin film transistor T through the drain contact hole CH2 is formed for each pixel region P on the first protective layer 150. [ The pixel electrode 162 may be formed in a substantially plate shape in the pixel region P. [ The pixel electrode 162 is formed of a transparent conductive material such as ITO.

On the pixel electrode 162, a second insulation pattern 172 that is in direct contact with the pixel electrode 162 and is patterned in substantially the same shape may be formed. In this regard, the second insulation pattern 172 is formed in the same mask process as the pixel electrode 162, and may be formed substantially in the same shape as the pixel electrode 162 in plan view. As another example, the second insulating pattern 172 may be configured to be removed on the pixel electrode 162. [

The touch electrode 201 or the common electrode 201 is formed in units of touch blocks TB and includes at least one insulating layer such as a second insulating layer 172 and a second protective layer 190 to form a fringe field. The common electrode 201 includes a plurality of electrode patterns 202 in the shape of a bar facing the pixel electrode 162 corresponding to each pixel region P and an opening 203 May be formed.

Here, the plurality of electrode patterns 202 may be formed to extend along the extending direction of the data lines 141. The plurality of electrode patterns 202 includes a first electrode pattern 202a located at the outermost side of the pixel region P in the vicinity of the data line 141 and a second electrode pattern 202b located inside the first electrode pattern 202a And the second electrode pattern 202b.

Here, the first electrode pattern 202a may be formed to have a width larger than that of the data line 141 and substantially obscure the data line 141 below, but the present invention is not limited thereto. The first electrode pattern 202a may have a width larger than that of the sensing wiring 181 overlapping the data wiring 141 so as to cover substantially the corresponding sensing wiring 181 below. But is not limited to.

When the first electrode pattern 202a is formed in this manner, the first electrode pattern 202a functions as a shielding electrode between the data line 141 and the pixel electrode 162 to prevent electrical interference therebetween. Similarly, the first electrode pattern 202a functions as a shielding electrode between the sensing wiring 181 and the pixel electrode 162, thereby preventing electrical interference therebetween.

The second electrode pattern 202b located inside may be formed to have a smaller width than the first electrode pattern 202a, but the present invention is not limited thereto.

The common electrode 201 and the pixel electrode 151 are formed of a transparent conductive material such as ITO, IZO, or ITZO.

The sensing wiring 181 may extend along the extending direction of the data wiring 141 located below the touch block TB and overlap the data wiring 141. If the sensing wiring 181 is arranged so as to overlap with the data wiring 141 which is a non-display element, the opening ratio can be prevented from being lowered by the sensing wiring 181 and the width of the sensing wiring 181 can be increased as much as possible The resistance can be reduced.

The sensing wiring 181 may be disposed between the common electrode 201 and an insulating layer such as a second protective layer 190. These electrodes may be formed in the touch contact hole CH1 formed in the second protective layer 190, As shown in FIG.

A first insulating pattern 171 and a transparent conductive pattern 161 which extend along the extending direction of the sensing wiring 181 and are patterned in substantially the same shape are formed in the lower portion of the sensing wiring 181, 181 are in direct contact with the lower first insulating pattern 171 and the first insulating pattern 171 is in direct contact with the lower transparent conductive pattern 161. [

In this regard, the transparent conductive pattern 161, the first insulation pattern 171, and the sensing wiring 181, which are sequentially stacked, are formed in the same mask process as the second insulation pattern 172 and the pixel electrode 162 . Accordingly, the sensing wiring 181, the first insulation pattern 171, and the transparent conductive pattern 161 can be formed in substantially the same shape.

The first and second insulating patterns 171 and 172 may be formed of the same material, for example, an inorganic insulating material such as silicon oxide or silicon nitride. However, the first and second insulating patterns 171 and 172 may be formed of an organic insulating material . The first and second insulating patterns 171 and 172 are separated from each other. Similarly, the transparent conductive pattern 161 is formed of the same material as that of the pixel electrode 162 and is separated from and separated from each other.

On the other hand, the transparent conductive pattern 161, which is in a state of being insulated from the upper sensing wiring 181 through the first insulating pattern 171, is electrically isolated from the liquid crystal display device 100 It can be configured as an unauthorized floating state. In this case, a separate signal is not applied to the transparent conductive pattern 161, so that electrical interference with surrounding signal wirings can be prevented.

As described above, according to the present embodiment, the insulating patterns 171 and 172 formed under the sensing wiring 181 and the pixel electrodes and the transparent conductive patterns 162 and 161 through the same mask process are disposed. By forming this arrangement structure by a single mask process, an electrical short between the sensing wiring 181 and the pixel electrode 162 can be prevented, and also the loss of the sensing wiring 181 can be prevented.

In this regard, the sensing wiring 181 formed of a metal material has poor adhesion to the transparent conductive pattern 161 formed of a transparent conductive material. Accordingly, when the sensing wiring is directly formed on the transparent conductive pattern as in the conventional art The sensing wiring is removed in the etching process and is lost.

On the other hand, in the present embodiment, the insulating pattern 171 using an insulating material having excellent adhesion to the sensing wiring 181 and the transparent conductive pattern 161 at the bottom is formed. Accordingly, the adhesion between the sensing wiring 181 and the underlying laminated film is improved, and the problem of the sensing wiring 181 being removed and lost due to penetration of the etching solution in the etching process can be effectively improved.

In the related art, as the foreign matter generated in the etching process of the metal layer for forming the sensing wiring remains on the transparent conductive layer between the photoresist patterns, the transparent conductive pattern and the pixel electrode are connected without being separated in the subsequent etching process As a result, there arises a problem that the sensing wiring and the pixel electrode are electrically short-circuited.

On the other hand, in the present embodiment, since the insulating pattern 171 is interposed between the transparent conductive pattern 161 and the sensing wiring 181, the electrical shorting problem between the sensing wiring 181 and the pixel electrode 162 is fundamentally eliminated .

Even if the electric short circuit between the sensing wiring 181 and the pixel electrode 162 is solved by using the insulating pattern 171, the transparent conductive pattern 161 and the pixel electrode 162 are connected without being disconnected as in the conventional case The charge applied to the pixel electrode 162 flows into the transparent conductive pattern 161 and the pixel voltage drops or a problem that the pixel regions arranged along the transparent conductive pattern 161 are electrically short- May occur. On the other hand, in the present embodiment, the dry etching process for the insulating film interposed between the metal layer and the transparent conductive layer further proceeds to form the insulating patterns 171 and 172 separated from each other. By this additional dry etching process, foreign matter existing on the insulating film can be removed more effectively on the transparent conductive layer, and in the subsequent etching process, the transparent conductive pattern 161 and the pixel electrode 162 are preferably formed .

Therefore, according to the present embodiment, problems that occur when the electric short circuit between the sensing wiring 181 and the pixel electrode 162 is solved and the pixel electrode 162 and the transparent conductive pattern 161 are connected are improved .

Hereinafter, a method of manufacturing the array substrate for a liquid crystal display device having the above-described structure will be described in detail with reference to FIG.

6A to 6F are cross-sectional views illustrating a method of manufacturing an array substrate for a liquid crystal display according to an embodiment of the present invention.

6A, a gate wiring (see 121 in FIG. 4) and a gate electrode 123 connected to a gate wiring are formed on a substrate 111 and a gate insulating film 130 is formed on the gate wiring and the gate electrode 123, .

Next, a semiconductor layer 131 corresponding to the gate electrode 123 is formed on the gate insulating film 130, source and drain electrodes 143 and 145 are formed on the semiconductor layer 131, And the data line 141 connected to the electrode 143 is formed. At this time, the semiconductor layer 131, the source and drain electrodes 143 and 145, and the data line 141 may be formed by the same mask process in order to reduce the mask process. In this case, a semiconductor pattern 132 connected to the semiconductor layer 131 is formed under the data line 141.

The gate electrode 123, the semiconductor layer 131 and the source and drain electrodes 143 and 145 formed as described above constitute the thin film transistor T.

Next, a first protective film 150 having drain contact holes CH2 for exposing the drain electrodes 145 is formed on the data lines 141 and the source and drain electrodes 143 and 145.

Next, a transparent conductive layer 160, an insulating film 170, and a metal layer 180 are sequentially formed on the first protective film 150, and a photoresist layer (not shown) is formed on the metal layer 180.

At this time, the transparent conductive layer 160 is formed of a transparent conductive material such as ITO, IZO, or ITZO.

The insulating film 170 may be formed of an inorganic insulating material such as silicon or silicon nitride, but is not limited thereto. The adhesion between the transparent conductive layer 160 and the metal layer 180 can be improved by disposing the insulating layer 170 between the transparent conductive layer 160 and the metal layer 180.

In addition, the metal layer 180 may be formed of a low-resistance metal material such as copper as a metal material having a lower resistance than the transparent conductive layer 160 in consideration of signal transmission.

Next, the photoresist layer is subjected to an exposure process and a development process using a halftone mask to form first and second photoresist patterns 211 and 212 on the metal layer 180.

At this time, the first photoresist pattern 211 is formed corresponding to the region where the sensing wiring is formed, and the second photoresist pattern 212 is formed corresponding to the region where the pixel electrode is formed. The second photoresist pattern 212 has a lower thickness than the first photoresist pattern 211.

Next, referring to FIG. 6B, the first wet etching process is performed on the metal layer 180 using the first and second photoresist patterns 211 and 212 formed as described above as an etching mask. Accordingly, the metal layer 180 located in the exposed region between the first and second photoresist patterns 211 and 212 is removed and the first and second metal patterns 181 and 182 are formed on the lower portions of the first and second photoresist patterns 211 and 212, Is formed.

Next, the dry etching process is performed on the insulating film 170 using the first and second photoresist patterns 211 and 212 as etching masks (that is, using the first and second metal patterns 181 and 182 as etching masks). Accordingly, first and second insulating patterns 171 and 172 are formed under the first and second metal patterns 181 and 182, respectively.

Next, referring to FIG. 6C, the ashing process is performed to remove the second photoresist pattern 212 having a low thickness. By this ashing process, the thickness and the width of the first photoresist pattern 211 are partially removed, thereby exposing the edge of the first metal pattern 181 at the bottom.

Next, referring to FIG. 6D, the second wet etching process is performed on the transparent conductive layer 160 using the first and second metal patterns 181 and 182 as etching masks. Thus, the transparent conductive pattern 161 and the pixel electrode 162 are formed in the lower portions of the first and second metal patterns 181 and 182 (that is, under the first and second insulating patterns 171 and 172, respectively).

Next, referring to FIG. 6E, a third wet etching process is performed on the metal layers, that is, the first and second metal patterns 181 and 182, using the ashed first photoresist pattern 211 as an etching mask. Thus, the second metal pattern 182 is removed, and the exposed portion of the first metal pattern 181 around the first photoresist pattern 211 is removed. As described above, the first metal pattern 181 from which the edges are removed corresponds to the sensing wiring 181.

On the other hand, since the sensing wiring 181 is patterned through an additional etching process after the ashing process, the sensing wiring 181 has a narrower width than the first insulating pattern 171 and the transparent conductive pattern 161 that are the lower laminated layer. That is, the first insulating pattern 171 and the transparent conductive pattern 161 have a shape protruding outside the sensing wiring 181.

Next, a strip process is performed to remove the first photoresist pattern 211.

Next, referring to FIG. 6F, a second protective film 190 having a touch contact hole (see CH1 in FIG. 4) for exposing the sensing wiring 181 is formed on the substrate on which the sensing wiring 181 is formed.

Next, the touch electrode 201 formed on a unit basis of the touch block (TB), that is, the common electrode, is formed on the second protective film 190. The touch electrode 201 is connected to the corresponding sensing wiring 181 through a touch contact hole.

The array substrate for a liquid crystal display according to the present embodiment can be manufactured through the above process.

As described above, in this embodiment, the sensing wiring 181 and the pixel electrode 162 are formed through a single mask process, and the first insulating pattern 171 and the pixel electrode 162 The first insulating pattern 171 and the second insulating pattern 172 separated from each other can be formed on the pixel electrode 162. In addition,

Particularly, in this embodiment, an insulating layer 170 is additionally formed between the transparent conductive layer 160 and the metal layer 180. Accordingly, the lower insulating layer 170 is patterned after the first wet etching process with respect to the metal layer 180 The dry etching process for forming the first and second insulating patterns 171 and 172 is further performed.

Therefore, even if foreign matter is generated between the first and second photoresist patterns 211 and 212 arranged at narrow intervals (for example, 2-3 μm), the dry etching process using the insulating film 170 is further performed in addition to the ashing process Foreign matter existing between the first and second photoresist patterns 211 and 212 can be effectively removed.

The transparent conductive layer 160 is patterned into a desired shape and is preferably used as the transparent conductive pattern 161 and the pixel electrode 162. [ Can be separated. Since the first insulating pattern 171 is present on the transparent conductive pattern 161 separated from the pixel electrode 162, the sensing wiring 181 is electrically insulated from the pixel electrode 162.

As described above, since the insulating film 170 is additionally used, the problem of electrical short-circuiting between the sensing wiring 181 and the pixel electrode 162 can be reliably prevented.

The insulating film 170 is excellent in adhesion to the lower transparent conductive layer 160 and the upper metal layer 180 so that the adhesion between the sensing wiring 181 and the lower laminated film is improved, The problem of being lost can be effectively improved.

As a result, according to the present embodiment, the insulating layer 170 is additionally disposed between the transparent conductive layer 160 for forming the pixel electrode 162 and the metal layer 180 for forming the sensing wiring 181, The electrical short circuit between the sensing wiring 181 and the pixel electrode 162 and the loss of the sensing wiring can be effectively prevented without performing a separate mask process.

The embodiment of the present invention described above is an example of the present invention, and variations are possible within the spirit of the present invention. Accordingly, the invention includes modifications of the invention within the scope of the appended claims and equivalents thereof.

100: liquid crystal display device 111: substrate
121: gate wiring 123: gate electrode
130: gate insulating film 131: semiconductor layer
132: semiconductor pattern 141: data wiring
143: source electrode 145: drain electrode
150: first protective film 160: transparent transparency layer
161: transparent conductive pattern 162: pixel electrode
170: insulating film 171: first insulating pattern
172: second insulation pattern 180: metal layer
181: sensing wiring (first metal pattern) 182: second metal pattern
190: second insulating film 201: touch electrode (common electrode)
202: electrode pattern 202a: first electrode pattern
202b: second electrode pattern 203: opening
211: first photoresist pattern 212: second photoresist pattern
CH1, CH2: Touch contact hole, drain contact hole
TB: Touch block
P: pixel area

Claims (6)

A transparent conductive pattern sequentially formed on the substrate in the same shape; a first insulation pattern; a sensing wiring;
A pixel electrode arranged in the pixel region and separated from the transparent conductive pattern;
A touch electrode disposed on each of the touch blocks and positioned on the sensing wiring and the pixel electrode,
The liquid crystal display device comprising:
The method according to claim 1,
A second insulation pattern having the same shape as that of the pixel electrode on the pixel electrode and separately disposed on the same layer as the first insulation pattern,
The liquid crystal display device further comprising:
The method according to claim 1,
Wherein the transparent conductive pattern and the first insulation pattern have a width wider than the sensing wiring
Insel touch type liquid crystal display device.
The method according to claim 1,
And a touch contact hole which is located above the sensing wiring and the pixel electrode and below the touch electrode and which is connected to the sensing electrode and the touch electrode,
The liquid crystal display device further comprising:
Forming a first photoresist pattern and a second photoresist pattern having a thickness lower than that of the first photoresist pattern on the transparent conductive layer, the insulating film, and the metal layer sequentially stacked on the substrate;
Forming a first metal pattern on each of the first and second photoresist patterns under the first etching process;
Performing a dry etching process on the insulating film after the first etching process to form first and second insulating patterns on the lower portions of the first and second metal patterns;
Performing an ashing process after the first etching process to remove the second photoresist pattern;
Forming a transparent conductive pattern and a pixel electrode under each of the first and second insulating patterns by performing a second etching process on the transparent conductive layer after the ashing process;
Forming a sensing wiring in which the first metal pattern edge is partially removed by performing a third etching process on the first and second metal patterns after the second etching process;
Forming a touch electrode on the sensing wiring and the pixel electrode on the touch block, respectively, the touch electrode being connected to the sensing wiring;
The method of manufacturing an in-line touch-type liquid crystal display device according to claim 1,
6. The method of claim 5,
Forming a protective film on the sensing wiring and the upper portion of the pixel electrode and below the touch electrode and having a touch contact hole to which the touch electrode and the sensing wiring are connected,
Further comprising the steps of:

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