KR20170036348A - The system for depositing a atomic layer - Google Patents

The system for depositing a atomic layer Download PDF

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Publication number
KR20170036348A
KR20170036348A KR1020150135406A KR20150135406A KR20170036348A KR 20170036348 A KR20170036348 A KR 20170036348A KR 1020150135406 A KR1020150135406 A KR 1020150135406A KR 20150135406 A KR20150135406 A KR 20150135406A KR 20170036348 A KR20170036348 A KR 20170036348A
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South Korea
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cassette
substrate
module
general
atomic layer
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KR1020150135406A
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Korean (ko)
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KR101760667B1 (en
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신웅철
최규정
백민
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주식회사 엔씨디
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/6773—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention relates to an atomic layer deposition system capable of performing a thin film deposition process with high productivity while a plurality of wafers are inserted into one process chamber by adopting an automated distribution system easily and quickly transferring substrates between a general cassette and a process cassette with a different substrate arrangement pitch without damage or contamination of the substrates. The atomic layer deposition system comprises: an atomic layer deposition process unit having a plurality of process boxes installed therein to perform an atomic layer deposition process in a state where a plurality of process cassettes are loaded; a cassette loading unit for loading and unloading a plurality of process cassettes for each of the plurality of process boxes; a substrate transfer unit installed on a side of the cassette loading unit, transferring substrates before process from the general cassette to the process cassette, and transferring substrates after process from the process cassette to the general cassette; and a cassette buffer unit installed between the cassette loading unit and the substrate transfer unit, allowing the process cassettes into which the substrates before process are inserted to stand by or to be transferred to the cassette loading unit and allowing the cassettes into which the substrates after process are inserted to stand by or to be transferred to the substrate transfer unit.

Description

TECHNICAL FIELD The present invention relates to an atomic layer deposition system capable of depositing a high productivity thin film,

The present invention relates to an atomic layer deposition system, and more particularly, to an automated atomic layer deposition system capable of smoothly and rapidly transferring a substrate between a process cassette having a different substrate arrangement pitch and a general cassette without contamination or damage, 0001] The present invention relates to an atomic layer deposition system capable of performing an atomic layer deposition process while maintaining high productivity while a single wafer is loaded into one process chamber.

BACKGROUND ART [0002] In general, a semiconductor device, a flat panel display device, or the like is subjected to various manufacturing processes. In particular, a process for depositing a predetermined thin film on a wafer or glass (hereinafter referred to as a " substrate " The thin film deposition process is mainly performed by sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD).

First, the sputtering method injects an inert gas such as argon into the process chamber while applying a high voltage to the target, for example, to generate argon ions in a plasma state. At this time, the argon ions are sputtered on the surface of the target, and the atoms of the target are separated from the surface of the target and deposited on the substrate.

Although a high purity thin film excellent in adhesiveness to a substrate can be formed by such a sputtering method, when a highly integrated thin film having a process difference is deposited by a sputtering method, it is very difficult to secure uniformity for the entire thin film. There are limits to the application of the ring method.

Next, chemical vapor deposition (CVD) is the most widely used deposition technique, in which a thin film having a desired thickness is deposited on a substrate using a reaction gas and a decomposition gas. For example, the chemical vapor deposition method first deposits a thin film having a desired thickness on a substrate by injecting various gases into a reaction chamber and chemically reacting gases induced by high energy such as heat, light or plasma.

In addition, the chemical vapor deposition method increases the deposition rate by controlling the reaction conditions through the ratio and amount of the plasma or gases applied as the reaction energy.

However, in the chemical vapor deposition method, since the reactions are rapid, it is very difficult to control the thermodynamic stability of the atoms, and the physical, chemical and electrical characteristics of the thin film are deteriorated.

Atomic Layer Deposition (ALD) is an atomic layer deposition method in which two or more reactants are sequentially introduced into a reaction chamber to form a thin film, By volume. That is, the first reaction gas is supplied in a pulsing manner and is chemically deposited on the lower film in the chamber, and then the remaining first reaction gas physically bonded is removed in a purge manner. Then, the second reaction gas is also chemically bonded to the first reaction gas (first reaction material) through pulsing and purge processes, so that a desired thin film is deposited on the substrate. In the above-described atomic layer deposition process, the time during which each reaction gas is subjected to pulsing and purge is referred to as a cycle. Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2, and ZnO are typical examples of thin films that can be formed by the atomic layer deposition method.

Since the atomic layer deposition can form a thin film having an excellent step coverage even at a low temperature of 60 ° C or lower, it is possible to form a thin film having a step coverage that is expected to be used in a process for manufacturing a next- Technology.

In order to use this atomic layer deposition technology not only in the semiconductor field but also in the field of display and solar cell, it is necessary to obtain a uniform thin film on a large area substrate, Sufficient productivity should be ensured.

However, when a plurality of cassettes loaded with a plurality of substrates are packed in a long length in order to process a plurality of substrates by a single process, when the atomic layer deposition process is performed, the process gas passage length becomes longer, However, there is a problem that it is difficult to uniformly form a thin film on a plurality of substrates.

Therefore, it is urgently required to develop an atomic layer deposition apparatus capable of performing a uniform process on all substrates in a short process time even when a plurality of cassettes are loaded.

An object of the present invention is to provide an automated distribution system capable of smoothly and quickly transferring a substrate between a process cassette having a different substrate arrangement pitch and a general cassette without contamination or damage, And to provide an atomic layer deposition system capable of carrying out an atomic layer deposition process while maintaining high productivity in a chamber.

According to an aspect of the present invention, there is provided an atomic layer deposition system including a plurality of process boxes capable of performing an atomic layer deposition process in a state where a plurality of process cassettes are loaded, ; A cassette loading unit for loading and unloading a plurality of process cassettes for each of the plurality of process boxes; A substrate transfer part provided on a side of the cassette loading part, for transferring a substrate from a process cassette to a process cassette and transferring the substrate from the process cassette to a general cassette; The process cassettes loaded between the cassette carry-in part and the substrate transfer part are waiting or are transferred to the cassette carry-in part, and the cassettes loaded with the substrate after the process are waiting or transferred to the substrate transfer part And a cassette buffer unit.

In the present invention, the cassette loading unit may include: a cassette loading unit that is mounted in a straight line in a longitudinal direction in a state in which a plurality of process cassettes are in close contact with each other; And a door part coupled to the front end of the cassette mounting part and blocking the gate of the process box.

In the present invention, the substrate transfer part may include: a cassette lifting and lowering module for the process in which the process cassette is seated on the cassette, and the half of the plurality of substrates mounted on the process cassette are alternately lifted and lowered; A general cassette lifting and lowering module installed adjacent to the process cassette lifting and lowering module for lifting and lowering a half of the substrates placed on one side of the plurality of substrates mounted on the upper side of the general cassette; A substrate grapping module installed over the process cassette elevation module and the general cassette elevation module for gripping and transporting a substrate raised by the process cassette elevation module or a substrate raised by the general cassette elevation module; .

Further, in the present invention, the substrate gripping module may include: a substrate gripper supporting both lower corners of the substrate; Gripper driving means for moving the substrate gripper back and forth; A substrate guide unit installed on the gripper driving unit and supporting a side surface of the substrate transferred to the substrate gripper; And a transfer robot for moving the gripper driving means in the vertical and horizontal directions.

Further, in the present invention, the general cassette lifting and lowering module may further include a tilting module for tilting the general cassette to one side,

And a substrate adsorption module provided above the general cassette lifting and lowering module for adsorbing and discharging or loading the cassette loaded in the general cassette.

According to another aspect of the present invention, there is provided a substrate adsorption module including: a plurality of substrate adsorption pads arranged side by side in a space between substrates to adsorb a side surface of the substrate; A pad portion elevating and lowering module for moving the adsorption pad portion up and down; A rotation module for rotating the pad portion elevation module; A pad tilting module tilting the pad portion elevating module; And a pad unit horizontally moving module for horizontally moving the sandwiching pad elevating and lowering module.

Further, in the present invention, it is preferable that the substrate adsorption module is charged with the substrate of one half of the general cassette for back-to-back deposition so that the non-deposition surface of the substrate adheres closely to the charging groove filled with the substrate for cutting the other side Do.

According to the present invention, there is provided an automated material distribution system capable of rapidly transferring a substrate between a process cassette having different pitches on which a substrate is mounted and a general cassette without causing damage or contamination to the substrate, There is an advantage that it can be carried out in a state in which the productivity is maintained.

1 is a layout diagram showing a configuration of an atomic layer deposition system according to an embodiment of the present invention.
2 is a view showing a structure of a substrate transfer apparatus according to an embodiment of the present invention.
3 is a view showing a structure of a substrate gripping module according to an embodiment of the present invention.
4 is a view showing a structure of a process cassette according to an embodiment of the present invention.
FIGS. 5 and 6 are views showing the process of raising and lowering the substrate by the cassette lifting and lowering module for process.
7 is a view showing a structure of a general cassette according to an embodiment of the present invention.
8 is a view showing a structure of a substrate transfer apparatus according to another embodiment of the present invention.
9 is a view showing the operation of the adsorption pad unit according to an embodiment of the present invention.
FIGS. 10 to 13 are views illustrating a substrate loading process by the adsorption pad unit according to an embodiment of the present invention.
FIGS. 14 and 15 are views showing a state before and after a substrate is loaded by a suction pad unit according to an embodiment of the present invention.

Hereinafter, a specific embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1, the high productivity atomic layer deposition system 1 according to the present embodiment includes an atomic layer deposition unit 100, a cassette loading unit 200, a substrate transfer unit 300, a cassette buffer unit 400).

The atomic layer deposition unit 100 is a component in which a plurality of process boxes 120 capable of performing an atomic layer deposition process are installed in a state where a plurality of process cassettes Cp are charged. 1, one or more process boxes 120 are installed side by side in one vacuum chamber 110, and each process box 120 is provided with a plurality of A space in which cassettes Cp for processing can be loaded can be formed.

The vacuum chamber 110 is evacuated and various components such as a gas supply unit (not shown in the figure) and exhaust units 130 and 140 are installed in the process box 120 so that an atomic layer deposition process can be performed. And they are not shown in FIG.

Next, the cassette loading unit 200 is a component for loading and unloading a plurality of process cassettes Cp for each of the plurality of process boxes 120. [ 1, the cassette loading unit 200 is installed in front of the atomic layer deposition apparatus 100, and a plurality of process cassettes Cp are moved back and forth in a state in which the cassettes Cp are loaded side by side A plurality of process cassettes Cp can be carried into or out of the process box 120 at the same time.

Specifically, in the present embodiment, the cassette loading unit 200 may include a cassette loading unit (not shown) and a door unit 210. The cassette mounting part has a structure capable of supporting a lower portion of the process cassette Cp. The door part 210 is coupled to the front end of the cassette mounting part and blocks the gate of the process box 120 Lt; / RTI > Accordingly, the process box 120 is hermetically closed by the door part 210, and thus an atomic layer deposition process is performed.

1, the substrate transfer part 300 is installed on the side of the cassette loading part 200 and transfers the substrate from the general cassette Cs to the process cassette Cp, It is a component that transfers the substrate from the process cassette (Cp) to the general cassette (Cs) after the process.

The atomic layer deposition process is advantageous because the space between the substrates is very narrow and the volume in the chamber is small, which results in high process efficiency. Therefore, as shown in FIG. 4, the process cassette Cp, which is carried into the process box 120 and on which the atomic layer deposition process is performed, has a very small pitch, that is, a pitch between the substrates when the substrates are mounted. On the other hand, a general cassette Cs used in a general distribution system has a pitch two or three times larger than that of the cassette Cp for insertion or ejection of a smooth substrate.

In the present embodiment, the substrate transfer part 300 serves to transfer the substrate between the process cassette Cp and the general cassette Cs having different pitches. This operation is different from the process of transferring the substrate from the process cassette Cp to the general cassette Cs and the process of transferring the substrate from the general cassette Cs to the process cassette Cp. The optimized structure is presented.

2, the substrate transfer apparatus installed in the substrate transfer part 300 according to the present embodiment includes a process cassette lifting and lowering module 310, a general cassette lifting and lowering module 320, a substrate gripping module 330 ). ≪ / RTI >

2, the process cassette Cp is mounted on the cassette Cp, and a plurality of substrates W mounted on the process cassette Cp are mounted on the process cassette Cp, And half of the substrates are alternately raised and lowered.

Here, 'alternately elevating and lowering' means that, as shown in FIG. 5, one of the plurality of substrates mounted on the process cassette Cp is not elevated and lowered continuously, The substrate is moved up and down in such a manner that one adjacent substrate is skipped and then the substrate is moved up and down. Therefore, according to the process cassette lifting and lowering module 310 according to the present embodiment, as shown in FIG. 6, half of the substrates contained in one process cassette Cp are raised and lowered while the neighboring substrates are raised and lowered staggeredly. The reason why the cassette Cp is alternately raised and lowered is that the pitch of the process cassette Cp is small so that the substrate interval is equal to the pitch of the general cassette Cs when the cassette Cp is transferred to a general cassette.

2, the general cassette lifting and lowering module 320 is installed adjacent to the process cassette lifting and lowering module 310, and the general cassette Cs is seated on the upper portion thereof, Cs) of the plurality of substrates (W). That is, unlike the cassette lifting and lowering module for process 310 described above, the general cassette lifting and lowering module 320 simply raises and lowers cassettes of one half.

Therefore, in the present embodiment, as shown in FIG. 2, the general cassette lifting and lowering module 320 is provided with elevating portions 322 and 324 on the left and right sides, respectively, to raise and lower the substrates disposed in the respective magnetic regions. The reason why the half substrates are raised and lowered independently is that, in the process of transferring the substrate from the general cassette Cs to the process cassette Cp, first half of the substrates are transferred to the process cassette Cp, This is because the substrate can be quickly transferred between the cassettes having different pitches without damaging the substrate by transferring the substrate between the transferred substrates.

2, the substrate grinding module 330 is installed on the upper side of the process cassette lifting and lowering module 310 and the general cassette lifting and lowering module 320, and the process cassette lifting and lowering module 310 ) Or the substrate elevated by the general cassette lifting module 320 and transports them to the opposite side. That is, the substrate gripping module 330 rips the substrates lifted by the process cassette lifting module 310 or the general cassette lifting module 320, and transports the substrates to the opposite side.

3, the substrate gripping module 330 includes a gripper 332, a gripper driving unit 334, a substrate guide unit 336, and a transfer robot 338 .

As shown in FIG. 3, the substrate grippers 332 are arranged in parallel to each other and support two lower corners of both sides of the substrate W to grip the substrates. Therefore, the substrate insertion grooves 331 are formed in the substrate gripper 332 at intervals corresponding to the substrate pitch. Since the substrate gripper 332 moves the substrate W in contact with only a lower edge portion of the substrate W, which is a very small portion of the substrate W, the possibility of the substrate being damaged or contaminated during the transfer process is very low.

Next, the gripper driving means 334 is a component for moving the substrate gripper 332 forward and backward, as shown in FIG. The substrate gripper 332 moves downward from the upper side of the substrate W in a state of keeping a wide gap to move downward to narrow the interval between the substrate grippers 332 in a descending state to the correct gripping position, W). Therefore, the gap between the pair of substrate grippers 332 is adjusted by the gripper driving means 334.

3, the substrate guide unit 336 is installed on the gripper driving unit 334, and the substrate guide unit 336 is mounted on the substrate gripper 332, It is a component that supports the side.

3, the transfer robot 338 is a component that moves the gripper driving means 334 in the vertical and horizontal directions. The transfer robot 334 transfers the gripped substrates to the horizontal And vertically.

On the other hand, there is a case where a thin film is formed only on one surface during an operation of performing an atomic layer deposition process on a substrate. In this case, a back-to-back deposition method is used in which only the deposition surface of the substrate is exposed to the outside, and the non-deposition surfaces are mated to prevent deposition. Thus, in order to deposit the back-to-back method, additional components are required in addition to the above-described substrate transfer part. This will be described below.

In order to deposit the back-to-back method, the substrates W are to be attached to the process cassette Cp as described above. For this purpose, the substrate transfer part 300 according to the present embodiment is further provided with a tilting module 340 and a substrate adsorption module 350 as shown in FIG.

10, the tilting module 340 is a component that tilts the general cassette Cs mounted on the general cassette lifting and lowering module 320 to one side by a predetermined angle?. The reason for tilting the cassette in this way is to make it easier for the substrate absorption module, which will be described later, to enter the space between the substrates in order to insert two substrates into one insertion groove formed in a common cassette.

As shown in FIG. 10, when the ordinary cassette Cs is inclined at a certain angle, all of the substrates W mounted thereon are inclined in the same direction so that the intervals between the substrates are set to be the same. Therefore, as shown in FIG. 9, when the adsorption pad 352 to be described later enters the space between the substrates W, it is possible to prevent a problem such as a collision with a specific substrate.

8, the substrate adsorption module 350 is installed above the general cassette lifting and lowering module 320, and adsorbs and discharges or charges the r-substrate packed in the general cassette Cs Lt; / RTI > That is, as shown in FIG. 10, the substrate adsorption module 350 enters between the substrates W inserted in the general cassette Cs inclined at a predetermined angle, Together, lifts. Then, as shown in Fig. 12, the raised substrate is rotated 180 degrees to change the direction of the substrate.

Then, as shown in Fig. 13, it is put down between the substrates remaining in the general cassette Cs. 14, in a state where only one substrate W is inserted into one insertion groove 3, two insertion holes 3 are formed in one insertion groove 3 as shown in Fig. W) are inserted in a state in which the non-deposited surfaces are in close contact with each other.

8, the substrate adsorption module 350 includes a suction pad unit 354, a pad portion elevation and lowering module 355, a rotation module 356, and a pad tilting module And a pad unit horizontal movement module 357. The pad unit horizontal movement module 357 may be formed of a flexible material. 9, the plurality of adsorption pads 352 are arranged at a pitch of the substrate pitch, as shown in FIG. 9, And each of the absorption pads 352 has a width smaller than the substrate pitch.

The pad portion elevating and lowering module 355, the rotation module 356, the pad portion tilting module and the pad portion horizontally moving module 357 are configured to lift, rotate, tilt, and horizontally move the adsorption pad portion 354 As the elements can be employed in general techniques, detailed description thereof will be omitted.

1, the cassette buffer unit 400 is installed between the cassette carry-in unit 200 and the substrate transfer unit 300, and the process cassettes Cp loaded with the substrate before the process The process cassettes Cp are transferred to the cassette loading unit 200 and then transferred to the substrate transfer station 300 or to the process cassettes Cp loaded with the substrates after the process.

In the high-productivity atomic layer deposition system 1 according to the present embodiment, a plurality of substrates are transferred to and discharged from the process chamber 110 for each process cassette (Cp) unit. Therefore, for proper interlocking of the time for inserting the substrate into the process cassette Cp and the time for mounting the process cassette Cp in the cassette carry-in unit 200, (400) is required. The same is true of the process of taking out the process cassette Cp.

The cassette buffer unit 400 is provided with feeding means (not shown) for horizontally feeding the process cassette Cp and mounting means (not shown) for attaching or detaching the process cassette Cp to the cassette loading unit 200 Separately.

1: High productivity atomic layer deposition system according to one embodiment of the present invention
100: atomic layer deposition apparatus 200: cassette loading unit
300: substrate transfer part 400: cassette buffer part
Cp: Process cassette Cs: Conventional cassette
W: substrate

Claims (7)

An atomic layer deposition facility in which a plurality of process boxes capable of carrying out an atomic layer deposition process are installed in a state where a plurality of process cassettes are loaded;
A cassette loading unit for loading and unloading a plurality of process cassettes for each of the plurality of process boxes;
A substrate transfer part provided on a side of the cassette loading part, for transferring a substrate from a process cassette to a process cassette and transferring the substrate from the process cassette to a general cassette;
The process cassettes loaded between the cassette carry-in part and the substrate transfer part are waiting or are transferred to the cassette carry-in part, and the cassettes loaded with the substrate after the process are waiting or transferred to the substrate transfer part And a cassette buffer portion. The apparatus according to claim 1, wherein the cassette-
A cassette mounting part mounted in a straight line in a longitudinal direction in a state in which a plurality of process cassettes are in close contact with each other;
And a door part coupled to a front end of the cassette mounting part and blocking a gate of the process box. The substrate processing apparatus according to claim 1,
A cassette lifting and lowering module for mounting the process cassette on an upper portion of the process cassette, the cassette lifting and lowering module including:
A general cassette lifting and lowering module installed adjacent to the process cassette lifting and lowering module for lifting and lowering a half of the substrates placed on one side of the plurality of substrates mounted on the upper side of the general cassette;
A substrate grapping module installed over the process cassette elevation module and the general cassette elevation module for gripping and transporting a substrate raised by the process cassette elevation module or a substrate raised by the general cassette elevation module; Wherein the at least one atomic layer deposition system comprises: 4. The apparatus of claim 3, wherein the substrate gripping module comprises:
A substrate gripper supporting both lower edges of the substrate;
Gripper driving means for moving the substrate gripper back and forth;
A substrate guide unit installed on the gripper driving unit and supporting a side surface of the substrate transferred to the substrate gripper;
And a transfer robot for moving the gripper driving means in the vertical and horizontal directions. The cassette lifting and lowering module according to claim 3,
A tilting module for tilting the general cassette to one side,
Further comprising a substrate adsorption module installed on the upper side of the general cassette lifting module for adsorbing and discharging a cassette loaded in the general cassette and loading or discharging the cassette. 6. The apparatus of claim 5, wherein the substrate adsorption module comprises:
A plurality of substrate adsorption pads for entering a space between the substrates and adsorbing one side surface of the substrate, the adsorption pad portions being arranged in parallel;
A pad portion elevating and lowering module for moving the adsorption pad portion up and down;
A rotation module for rotating the pad portion elevation module;
A pad tilting module tilting the pad portion elevating module;
And a pad portion horizontally moving module for horizontally moving the sac-pad portion elevating module. 6. The apparatus of claim 5, wherein the substrate adsorption module comprises:
Wherein the substrate of one half of the general cassette is charged in such a manner that the non-deposited surface of the substrate adheres closely to the charging groove filled with the substrate of the other side for back to back deposition.
KR1020150135406A 2015-09-24 2015-09-24 The system for depositing a atomic layer KR101760667B1 (en)

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KR20190125040A (en) * 2018-04-27 2019-11-06 주식회사 엔씨디 A automatic system for depositing the atomic layer
CN111549332A (en) * 2019-02-08 2020-08-18 Ncd株式会社 Atomic layer deposition apparatus
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