CN111549332A - Atomic layer deposition apparatus - Google Patents

Atomic layer deposition apparatus Download PDF

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Publication number
CN111549332A
CN111549332A CN201910384724.3A CN201910384724A CN111549332A CN 111549332 A CN111549332 A CN 111549332A CN 201910384724 A CN201910384724 A CN 201910384724A CN 111549332 A CN111549332 A CN 111549332A
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Prior art keywords
gas
atomic layer
process chamber
layer deposition
deposition apparatus
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Chinese (zh)
Inventor
申雄澈
崔圭政
白敏�
杨澈勋
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Ncd Corp
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Ncd Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

The present invention relates to an atomic layer deposition apparatus which is not a dual chamber but has a single chamber structure and is capable of performing a uniform thin film forming process on a plurality of substrates arranged in a plurality of rows, including: a process chamber having an opening formed at one side thereof and having a certain inner space, thereby performing an atomic layer deposition process; a plurality of process cartridges loaded inside the process chamber to perform an atomic layer deposition process, and unloaded to the outside after the completion of the process; a gas supply device for supplying a gas to the front end portions of the substrates so that the spaces between the substrates form a laminar flow, for all the substrates loaded in the cassette; an exhaust-side laminar-flow forming portion that maintains a laminar flow of the process gas injected by the gas supply device to a rear end portion of the substrate; an exhaust device for sucking gas inside the process chamber and exhausting the gas; a heating device for heating the process chamber; and a door opening and closing the opening portion.

Description

Atomic layer deposition apparatus
Technical Field
The present invention relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus having a single chamber structure instead of a dual chamber and capable of performing a uniform thin film formation process on a plurality of substrates arranged in a plurality of rows.
Background
In general, the manufacture of semiconductor devices, flat panel display devices, and the like is subject to multiple manufacturing processes, wherein a process of depositing a predetermined thin film on a wafer or glass (hereinafter referred to as a 'substrate') is required. Such a thin film deposition process mainly uses a sputtering method (sputtering), a chemical vapor deposition method (CVD), an atomic layer deposition method (ALD), and the like.
First, in the sputtering method, for example, an inert gas such as argon is injected into a process chamber in a state where a high voltage is applied to a target in order to generate argon ions in a plasma state. At this time, the argon ions are sputtered onto the surface of the target, and the target atoms are desorbed from the surface of the target and deposited on the substrate.
Although a high-purity thin film having excellent adhesion to a substrate can be formed by such a sputtering method, it is difficult to ensure uniformity of the entire thin film when a highly integrated thin film having a process variation is deposited by the sputtering method. Therefore, there is a limitation in the application of the sputtering method to the fine pattern forming process.
Second, the chemical vapor deposition method is the most widely used deposition technique, and is a method of depositing a thin film having a desired thickness on a substrate using a reaction gas and a decomposition gas. For example, the chemical vapor deposition method first injects a plurality of gases into a reaction chamber, so that chemical reactions are generated between the plurality of gases induced by high energy such as heat, light or plasma, thereby depositing a thin film of a desired thickness on a substrate.
In addition, in the chemical vapor deposition method, the reaction conditions are controlled by the ratio (ratio) amount (atmosphere) of plasma or gas applied as reaction energy to increase the deposition rate.
However, the chemical vapor deposition method has a problem that the reaction speed is very high, and thus it is difficult to control the thermodynamic stability of atoms, thereby degrading the physical, chemical, and electrical characteristics of a thin film.
Finally, the Atomic Layer Deposition method is a method in which two or more reactants are sequentially charged into a reaction chamber (chamber) for forming a thin film, and the thin film is deposited in units of Atomic layers by decomposition and adsorption of each reactant. That is, after the first reaction gas is supplied in a pulse (pulsing) manner and chemically deposited on the lower film in the chamber, the physically combined residual first reaction gas is removed in a purge (purge) manner. Then, the second reaction gas is also chemically combined with the first reaction gas (first reactant) in part through a pulse (pulsing) and purge (purge) process, thereby depositing a desired thin film on the substrate. In the atomic layer deposition process, the time during which each reaction gas is pulsed (pulsing) and purged (purge) is referred to as a cycle (cycle). A typical thin film that can be formed by such atomic layer deposition is Al2O3，HfO2，ZrO2，TiO2And ZnO.
The atomic layer deposition can form a thin film having excellent step coverage (stepcoverage) at a relatively low temperature of 60 ℃ or less, and thus the process technology is expected to be used more in the manufacturing processes of new-generation semiconductor devices, displays, solar cells, and the like.
In order to expand the use of such atomic layer deposition techniques to the fields of displays, solar cells, and the like other than the semiconductor field, it is necessary to form a uniform thin film on a large-area substrate and to process a plurality of large-area substrates by one process to secure sufficient productivity.
However, the conventional atomic layer deposition apparatus has a dual chamber structure of an inner chamber and an outer chamber, and has problems in that the apparatus structure is complicated and manufacturing and maintenance are difficult, and in addition, since the atomic layer deposition process is performed in a state where a plurality of cassettes in which a plurality of substrates are loaded in order to process a plurality of substrates through one process, a process time is lengthened due to a long process gas passing interval, and it is difficult to form uniform thin films on a plurality of substrates.
Therefore, it is urgently required to develop an atomic layer deposition apparatus having a simple structure and performing a uniform process on all substrates in a short process time in a state of being loaded in a plurality of columns of cassettes.
Disclosure of Invention
(technical problem to be solved)
The present invention is directed to provide an atomic layer deposition apparatus which has a single chamber structure instead of a dual chamber and is capable of performing a uniform thin film formation process on a plurality of substrates arranged in a plurality of rows.
(means for solving the problems)
The atomic layer deposition apparatus of the present invention for solving the aforementioned technical problem includes: a process chamber having an opening formed at one side thereof and having a certain inner space, thereby performing an atomic layer deposition process; a plurality of process cassettes configured to load a plurality of substrates arranged in a plurality of rows in parallel, to make the interval between the substrates flow in a layer shape, to load the substrates into the process chamber in a state of being loaded to perform an atomic layer deposition process, and to unload the substrates to the outside after the process is completed; a gas supply device which is provided on the opening portion side of the process chamber and supplies a gas to the front end portion of the substrates so that the space between the substrates forms a laminar flow in a direction parallel to the arrangement direction of the substrates for all the substrates loaded in the cassette; an exhaust-side laminar-flow forming portion provided on an opposite side of the opening portion in the process chamber so that a laminar flow of the process gas injected by the gas supply device is maintained to a rear end portion of the substrate; an exhaust device which is arranged at the rear side of the exhaust side laminar flow forming part in the process chamber, sucks the gas in the process chamber and exhausts the gas; a heating device formed outside the process chamber to surround the outside of the process chamber, for heating the process chamber; and a door opening and closing the opening portion.
Also, preferably, the heating means of the present invention are a plurality of sheath heaters enclosing the process chamber.
Also, preferably, the atomic layer deposition apparatus of the present invention has a front heating device capable of heating a front surface portion of the process chamber outside or inside the door.
In the present invention, it is preferable that the gas supply device is a plurality of gas supply ports which are formed through a side wall or a corner of the process chamber adjacent to the opening, and which uniformly diffuse and supply gas to the entire width of the opening.
In the present invention, it is preferable that the plurality of gas supply ports are formed in the process chamber at corners adjacent to the opening, and a pipe is connected to a first corner and a second corner in a diagonal direction of the first corner to supply the raw material gas and the purge gas, and a pipe is connected to a third corner adjacent to the first corner and a fourth corner in the diagonal direction to supply the reaction gas and the purge gas.
Further, it is preferable that the atomic layer deposition apparatus of the present invention further includes a gas laminar flow forming part located at a front end portion of the substrate loaded to the cassette in the process chamber so as to induce the process gas injected from the gas supply device to form a laminar flow before reaching the substrate.
In the present invention, it is preferable that the process cartridge includes one or both of an exhaust-side laminar flow forming portion formed at a rear end portion of the process cartridge and a gas laminar flow forming portion formed at a front end portion of the process cartridge.
Further, it is preferable that the atomic layer deposition apparatus of the present invention further includes an additional gas supply device which supplies a process gas at a position between a specific substrate among the plurality of substrates loaded in the process chamber in the sidewall or corner of the process chamber.
Also, it is preferable that the atomic layer deposition apparatus of the present invention has two or more process chambers in a vertical direction or a horizontal direction.
Further, preferably, according to the atomic layer deposition apparatus of the present invention, two or more columns of the process cartridges are disposed in a vertical direction or a horizontal direction inside the process chamber.
Also, preferably, according to the atomic layer deposition apparatus of the present invention, a plurality of sealing members are further provided between the opening portion of the process chamber and the door.
Also, preferably, according to the atomic layer deposition apparatus of the present invention, the sealing member disposing section further has a cooling device.
Also, preferably, the atomic layer deposition apparatus forms a spacing space between an upper end of a substrate loaded to the process cassette and the inner wall of the process chamber and between a lower end of the substrate and the inner wall of the process chamber in a state where the process cassette is loaded.
Further, in the present invention, it is preferable that the gas supply device includes: a gas supply port provided in the door to supply a process gas to an inside of the door; and a distribution plate for spraying the process gas supplied from the gas supply port in a state of being uniformly diffused in the substrate direction while being heated by a front heating part provided inside the door.
Also, preferably, the atomic layer deposition apparatus of the present invention further has a cassette mounting part provided at an inner lower side of the process chamber, supporting a lower portion of a cassette mounted at a lowermost side among the plurality of cassettes.
Also, preferably, the process cartridge of the present invention has a structure in which the lower surface is open.
In addition, preferably, according to the atomic layer deposition apparatus of the present invention, two substrates are loaded in a back-to-back (back-to-back) configuration into one groove of the process cartridge.
(Effect of the invention)
The atomic layer deposition apparatus of the present invention is advantageous in that it has a single chamber structure instead of a dual chamber and is capable of performing a uniform thin film formation process with excellent throughput and process efficiency for a plurality of substrates arranged in a plurality of rows.
Drawings
Fig. 1 is a sectional view showing a structure of an atomic layer deposition apparatus of an embodiment of the present invention.
Fig. 2 is a diagram showing the structure of a gas supply device according to an embodiment of the present invention.
Fig. 3 is a diagram showing the structure of a process cartridge according to an embodiment of the present invention.
Fig. 4 is a view showing the structure of a process cartridge according to another embodiment of the present invention.
Fig. 5 is a view illustrating a state in which a process cartridge is loaded inside a process chamber according to an embodiment of the present invention.
Fig. 6 is a view illustrating a state in which a process cartridge is loaded into the interior of a process chamber according to another embodiment of the present invention.
Fig. 7 is a diagram illustrating a configuration state of a process chamber according to an embodiment of the present invention.
Fig. 8 is a view showing a configuration state of a process chamber according to another embodiment of the present invention.
Fig. 9 is a diagram showing the structure of a door of one embodiment of the present invention.
Fig. 10 is a diagram illustrating a state in which a process cartridge is loaded in a process chamber according to an embodiment of the present invention.
Fig. 11 and 12 are views showing the structures of a door and a gas supply device according to another embodiment of the present invention.
Description of the symbols
100: atomic layer deposition apparatus of one embodiment of the invention
110: the process chamber 120: art box
130: gas supply device 140: exhaust side laminar flow forming part
150: exhaust device 160: heating device
170: a door S: substrate
Detailed Description
Specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
< example 1>
As shown in fig. 1, the ald apparatus 100 of the present embodiment includes a process chamber 110, a process cartridge 120, a gas supply device 130, an exhaust-side laminar flow forming part 140, an exhaust device 150, a heating device 160, and a door 170.
First, as shown in fig. 1, the process chamber 110 is a member having an opening 111 formed at one side thereof and having a certain internal space so as to perform an atomic layer deposition process. For example, the process chamber 110 may have an elongated square barrel shape.
Also, the front end of the process chamber 110 of the present embodiment preferably further includes a gas laminar flow forming portion 180. As shown in fig. 1, the gas laminar flow forming part 180 is a member that is formed at the front end of the substrate S loaded in the process chamber 110 to the cassette 120, and induces the process gas injected from the gas supply device 130 to form a laminar flow before reaching the substrate.
Thus, the laminar flow of the gas is smoothly formed in front of the front end of the substrate S by the gas laminar flow forming portion 180, and there is an advantage that a uniform thin film can be formed in all regions of all the substrates.
In addition, for the efficiency of the process, the atomic layer deposition apparatus 100 of the embodiment may also have a structure in which two or more process chambers 110 are disposed in the vertical direction, two or more process chambers are disposed in the horizontal direction, or 4 or more process chambers are disposed in the vertical, horizontal, and vertical directions, as shown in fig. 7 and 8.
Next, the process cartridge 120 has a structure in which the lower surface is open as shown in fig. 1, and a plurality of substrates S are mounted in parallel such that the interval between the substrates becomes a laminar flow interval. The process cassette 120 is loaded (loading) into the process chamber 110 in a state where the plurality of substrates S are loaded to perform the atomic layer deposition process, and unloaded (unloading) to the outside after the completion of the process.
At this time, in a state where the process cassette 120 is loaded, as shown in fig. 10, the space 101 and 102 is formed between the upper end of the substrate S loaded in the process cassette 120 and the inner wall of the process chamber 110 and between the lower end of the substrate S and the inner wall of the process chamber 110, so that the uniform gas flow can be maintained in the space where the substrates are arranged.
In addition, in this embodiment, two substrates are loaded in a back-to-back (back-to-back) manner into one groove of the process cartridge. The term "back-to-back" refers to a state in which the back surfaces of the two substrates are in close contact with each other, and the back surfaces of the substrates are surfaces on which no atomic layer deposition process is performed. Since two substrates are loaded in one tank in a back-to-back manner, there is an advantage that the process can be performed in a state where more substrates are loaded in one cassette.
Therefore, it is preferable that the process chamber further has a cartridge mounting part 190 inside. As shown in fig. 10, the cartridge mounting unit 190 is provided in the form of a plurality of mounting rods at a lower side of the process chamber 110, and supports a lower portion of the cartridge mounted at the lowermost side among the plurality of cartridges 120 so as to be spaced apart from a lower surface of the process chamber 110.
The cassette mounting part 190 may ensure a moving space of a cassette moving device (not shown) during loading/unloading of the process cassette 120, and may also ensure the aforementioned interval space 101 between the lower end of the substrate S and the inner wall of the process chamber 110.
In the present embodiment, the process cassette 120 has a structure in which a plurality of substrates S are arranged in a plurality of rows, the substrates arranged in each row are maintained at the same position and interval, and the gas supplied from the gas supply device 130 passes through the space between the plurality of rows of substrates S while maintaining a laminar flow and a substantially straight path, as shown in fig. 3.
In addition, as shown in fig. 4, the process cartridge 120 of the present embodiment may be formed with one or both of the exhaust-side laminar flow forming portion 122 and the gas laminar flow forming portion 124. The exhaust-side laminar flow forming portion 122 is formed at a rear end portion of the process cassette 120, and the gas laminar flow forming portion 124 is formed at a front end portion of the process cassette 120, so that a uniform thin film is formed on all regions of the plurality of rows of substrates S loaded in the process cassette 120.
Also, in order to shorten the process time and improve the process efficiency, the atomic layer deposition apparatus 100 of the present embodiment may have a structure in which two or more columns of the process cartridges 120 are disposed in the vertical direction or the horizontal direction inside one process chamber 110, as shown in fig. 5 and 6.
As shown in fig. 1, the gas supply device 130 is provided on the opening 111 side of the process chamber 110, and supplies a gas to the front end of the substrate S in a direction parallel to the arrangement direction of the substrates S, so that the space between the substrates flows in a laminar manner, for all the substrates S loaded on the cassette 120. That is, the gas supply device 130 supplies the source gas, the reaction gas, and the purge gas to the space between the substrates S in a laminar flow, so that the atomic layer deposition process can be performed on all the substrates S loaded in the process chamber 110.
As shown in fig. 1 and 2, the gas supply device 130 of the present embodiment is formed by a plurality of gas supply ports 130a to 130d that penetrate through the side wall or corner of the process chamber 110 adjacent to the opening 111 and uniformly diffuse and supply the gas to the entire width of the opening 111.
At this time, the same gas may be supplied to the plurality of gas supply ports 130a to 130d in the same manner at the same time period, or different gases may be supplied in different manners at different time periods. For example, as shown in fig. 2, the plurality of gas supply ports 130a to 130d are connected to two pipes, respectively, one pipe 134a to 134d supplies the purge gas identically, and the other pipe 132a to 132d supplies the raw material gas or the reaction gas identically or differently.
In particular, the gas supply ports 130a and 130c formed in the process chamber 110 adjacent to the corner of the opening 111 are connected to the gas supply ports 132a and 132c and the purge gas supply ports 134a and 134c provided in the first corner and the second corner in the diagonal direction of the first corner, respectively, and the gas supply ports 130b and 130d provided in the third corner adjacent to the first corner and the fourth corner in the diagonal direction of the first corner are connected to the reactant gas supply ports 132b and 132d and the purge gas supply ports 134b and 134d, respectively, so that the gas can be uniformly and rapidly diffused.
In addition, the atomic layer deposition apparatus of the present embodiment may further have an additional gas supply device 136. As shown in fig. 1, the additional gas supply device 136 is a member that is provided at a position between a specific substrate and a substrate among the plurality of substrates S loaded into the process chamber 110 in the sidewall or corner of the process chamber 110, and additionally supplies a source gas and a process gas.
When a plurality of rows of substrates are loaded into one process chamber 110, the additional gas supply device 136 additionally supplies gas because the gas flow at the rear end may be weakened or changed, unlike the front end of the chamber.
Then, the exhaust-side laminar-flow forming portion 140 is provided on the opposite side of the opening portion 111 in the process chamber 110 as shown in fig. 1, and is a member that maintains the laminar flow of the process gas injected by the gas supply device 130 to the rear end portion of the substrate S.
That is, the exhaust-side laminar flow forming portion 140 performs the same function as the exhaust-side laminar flow forming portion 122 provided in the process cartridge 120.
Then, as shown in fig. 1, the exhaust unit 150 is provided behind the exhaust-side laminar flow forming unit 140 in the process chamber 110, and sucks and exhausts the gas inside the process chamber 110. The exhaust unit 150 sucks and exhausts the gas existing in the process chamber interior 110 in addition to the gas supplied by the gas supply unit 130. For this purpose, the exhaust device 150 in the present embodiment is specifically composed of a gas collecting and discharging unit 152 and an exhaust pump 154 as shown in fig. 1.
In the air discharging device 150 of the present embodiment, the powder trap is not shown to be disposed between the collection and discharge portion 152 and the discharge pump portion 154 to perform a function.
Then, the heating device 160 is formed outside the process chamber 110 to heat the components of the process chamber 110 in such a manner as to surround the outside of the process chamber 110, as shown in fig. 1 and 10. In this embodiment, the heating apparatus 160 heats the process chamber 110 in order to maintain the temperature inside the process chamber 110 at a temperature suitable for the ald process, and particularly, preferably includes a plurality of jacket heaters (j acketteaters) which externally surround the process chamber 110.
Then, the door 170 is a member that closes the opened opening 111 of the process chamber 110, as shown in fig. 1. It is required to completely close the opening portion 111 during a process and to open during loading or unloading of the process cassette 120, and thus the door 170 opens and closes the opening portion 111 according to the implemented process.
Accordingly, a sealing member 174 is provided along an inner face edge of the door 170, thereby maintaining airtightness in a state of being closely attached to the process chamber 110. In this case, as shown in fig. 9, the sealing member 174 may be provided in a double manner to ensure airtightness of the process chamber 110.
Secondly, it is preferable that the sealing member 174 is provided in the interior of the door 170 with a cooling device 176, as shown in fig. 9, so that the sealing member 174 can be prevented from being thermally damaged during the operation of the apparatus.
In addition, in this embodiment, the door 170 may further have a front heating device 172 outside or inside for heating the front surface of the process chamber 110. The front heating device 172 can heat the front of the process chamber 110 that cannot be heated by the heating device 160, so that the temperature inside the process chamber 110 is maintained uniform.
< example 2>
In this embodiment, since the components other than the gas supply device 230 and the door 270 are substantially the same as those in embodiment 1, the repetitive description thereof will be omitted, and only the gas supply device 230 and the door 270 will be described. The gas supply device 230 of the present embodiment is different from that of embodiment 1 in that it is disposed not on the sidewall of the process chamber but on the gate 270. Therefore, the gas supply device 230 includes a gas supply port 232 and a distribution plate 234, as shown in fig. 11 and 12.
First, the gas supply port 232 is provided in the door 270 to supply a process gas to the inside of the door, and the distribution plate 234 is a member that diffuses and distributes the process gas supplied from the gas supply port 232 in a state where the process gas is uniformly diffused in the substrate direction. A front heating part 272 is provided in the door 270, and the gas supplied from the gas supply port 232 is supplied into the process chamber through a distribution plate 234 while being heated by the front heating part 272.

Claims (17)

1. An atomic layer deposition apparatus, comprising:
a process chamber having an opening formed at one side thereof and having a certain inner space, thereby performing an atomic layer deposition process;
a plurality of process cassettes configured to load a plurality of substrates arranged in a plurality of rows in parallel, to make the interval between the substrates flow in a layer shape, to load the substrates into the process chamber in a state of being loaded to perform an atomic layer deposition process, and to unload the substrates to the outside after the process is completed;
a gas supply device which is provided on the opening portion side of the process chamber and supplies a gas to the front end portion of the substrates so that the space between the substrates forms a laminar flow in a direction parallel to the arrangement direction of the substrates for all the substrates loaded in the cassette;
an exhaust-side laminar-flow forming portion provided on an opposite side of the opening portion in the process chamber so that a laminar flow of the process gas injected by the gas supply device is maintained to a rear end portion of the substrate;
an exhaust device which is arranged at the rear side of the exhaust side laminar flow forming part in the process chamber, sucks the gas in the process chamber and exhausts the gas;
a heating device formed outside the process chamber to surround the outside of the process chamber, for heating the process chamber; and
and a door opening and closing the opening portion.
2. The atomic layer deposition apparatus according to claim 1,
the heating means is a plurality of sheath heaters enclosing the process chamber.
3. The atomic layer deposition apparatus according to claim 2,
there is also a front heating device outside or inside the door capable of heating the front portion of the process chamber.
4. The atomic layer deposition apparatus according to claim 1,
the gas supply device is a plurality of gas supply ports which are formed through a sidewall or a corner of the process chamber adjacent to the opening and which uniformly diffuse and supply gas to the entire width of the opening.
5. The atomic layer deposition apparatus according to claim 4,
the plurality of gas supply ports are formed in the process chamber at corners adjacent to the opening, and pipes are connected to a first corner and a second corner in a diagonal direction of the first corner to supply the raw material gas and the purge gas, and pipes are connected to a third corner adjacent to the first corner and a fourth corner in the diagonal direction of the first corner to supply the reaction gas and the purge gas.
6. The atomic layer deposition apparatus according to claim 1,
the apparatus further includes a gas laminar flow forming unit located at a front end portion of the substrate loaded in the cassette in the process chamber, for inducing the process gas injected from the gas supply unit to form a laminar flow before reaching the substrate.
7. The atomic layer deposition apparatus according to claim 1,
the process cartridge includes either an exhaust-side laminar flow forming portion formed at a rear end portion of the process cartridge or a gas laminar flow forming portion formed at a front end portion of the process cartridge, or both.
8. The atomic layer deposition apparatus according to claim 1,
the apparatus further includes an additional gas supply device for supplying a process gas to a location between a substrate and a specific substrate among the plurality of substrates loaded in the process chamber at a sidewall or corner of the process chamber.
9. The atomic layer deposition apparatus according to claim 1,
more than two process chambers are arranged in the up-down direction or the left-right direction.
10. The atomic layer deposition apparatus according to claim 1,
more than two rows of the process cartridges are placed in the process chamber in the up-down direction or the left-right direction.
11. The atomic layer deposition apparatus according to claim 1,
a plurality of sealing members are also provided between the opening of the process chamber and the door.
12. The atomic layer deposition apparatus according to claim 1,
the sealing member disposing section further has a cooling device.
13. The atomic layer deposition apparatus according to claim 1,
in a state where the process cassette is loaded, a spacing space is formed between an upper end of the substrate loaded to the process cassette and the inner wall of the process chamber and between a lower end of the substrate and the inner wall of the process chamber.
14. The atomic layer deposition apparatus according to claim 3,
the gas supply device includes: a gas supply port provided in the door to supply a process gas to an inside of the door; and a distribution plate for spraying the process gas supplied from the gas supply port in a state of being uniformly diffused in the substrate direction while being heated by a front heating part provided inside the door.
15. The atomic layer deposition apparatus according to claim 1,
and a cartridge mounting part disposed at a lower side of the inside of the process chamber and supporting a lower portion of a cartridge mounted at a lowermost side among the plurality of cartridges.
16. The atomic layer deposition apparatus according to claim 1,
the process cartridge has a structure that is open below.
17. The atomic layer deposition apparatus according to claim 1,
two substrates are loaded in a back to back (back to back) configuration into one slot of the process cassette.
CN201910384724.3A 2019-02-08 2019-05-09 Atomic layer deposition apparatus Pending CN111549332A (en)

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FI20225272A1 (en) * 2022-03-30 2023-10-01 Beneq Oy Reaction chamber, atomic layer deposition apparatus and method

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KR20170036348A (en) * 2015-09-24 2017-04-03 주식회사 엔씨디 The system for depositing a atomic layer

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US20140165910A1 (en) * 2012-11-29 2014-06-19 Ncd Co., Ltd. Apparatus for large-area atomic layer deposition
KR20170036348A (en) * 2015-09-24 2017-04-03 주식회사 엔씨디 The system for depositing a atomic layer

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CN116682893B (en) * 2023-07-28 2023-10-13 无锡松煜科技有限公司 Al with different thicknesses on front and back of silicon wafer 2 O 3 Method for producing film

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