KR20150081596A - The apparatus for depositing the atomic layer - Google Patents

The apparatus for depositing the atomic layer Download PDF

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Publication number
KR20150081596A
KR20150081596A KR1020140001245A KR20140001245A KR20150081596A KR 20150081596 A KR20150081596 A KR 20150081596A KR 1020140001245 A KR1020140001245 A KR 1020140001245A KR 20140001245 A KR20140001245 A KR 20140001245A KR 20150081596 A KR20150081596 A KR 20150081596A
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KR
South Korea
Prior art keywords
process chamber
gas
unit
atomic layer
substrates
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KR1020140001245A
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Korean (ko)
Inventor
신웅철
최규정
백민
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주식회사 엔씨디
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Priority to KR1020140001245A priority Critical patent/KR20150081596A/en
Publication of KR20150081596A publication Critical patent/KR20150081596A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to an atomic layer deposition apparatus capable of continuously carrying out an atomic layer deposition process in a state where a plurality of large-area substrates are loaded in a chamber at a layered flow interval, A process chamber in which a deposition process is performed; A substrate loading unit for loading a plurality of substrates into the process chamber at a laminar flow interval; A gate formed on one side wall of the process chamber; A process gas supply unit installed in front of the process chamber for supplying a process gas to a plurality of substrates stacked in the process chamber; And exhaust means installed in the rear of the process chamber for sucking and discharging the gas inside the process chamber.

Description

TECHNICAL FIELD [0001] The present invention relates to an atomic layer deposition apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atomic layer deposition apparatus, and more particularly, to an atomic layer deposition apparatus capable of continuously carrying out an atomic layer deposition process in which a plurality of large-area substrates are loaded in a chamber at a laminar flow interval.

BACKGROUND ART [0002] In general, a semiconductor device, a flat panel display device, or the like is subjected to various manufacturing processes. In particular, a process for depositing a predetermined thin film on a wafer or glass (hereinafter referred to as a " substrate " The thin film deposition process is mainly performed by sputtering, chemical vapor deposition (CVD), or atomic layer deposition (ALD).

First, the sputtering method injects an inert gas such as argon into the process chamber while applying a high voltage to the target, for example, to generate argon ions in a plasma state. At this time, the argon ions are sputtered on the surface of the target, and the atoms of the target are separated from the surface of the target and deposited on the substrate.

Although a high purity thin film excellent in adhesiveness to a substrate can be formed by such a sputtering method, when a highly integrated thin film having a process difference is deposited by a sputtering method, it is very difficult to secure uniformity for the entire thin film. There are limits to the application of the ring method.

Next, chemical vapor deposition (CVD) is the most widely used deposition technique, in which a thin film having a desired thickness is deposited on a substrate using a reaction gas and a decomposition gas. For example, the chemical vapor deposition method first deposits a thin film having a desired thickness on a substrate by injecting various gases into a reaction chamber and chemically reacting gases induced by high energy such as heat, light or plasma.

In addition, the chemical vapor deposition method increases the deposition rate by controlling the reaction conditions through the ratio and amount of the plasma or gases applied as the reaction energy.

However, in the chemical vapor deposition method, since the reactions are rapid, it is very difficult to control the thermodynamic stability of the atoms, and the physical, chemical and electrical characteristics of the thin film are deteriorated.

Atomic Layer Deposition (ALD) is an atomic layer deposition method in which two or more reactants are sequentially introduced into a reaction chamber to form a thin film, By volume. That is, the first reaction gas is supplied in a pulsing manner and is chemically deposited on the lower film in the chamber, and then the remaining first reaction gas physically bonded is removed in a purge manner. Subsequently, the second reaction gas is also chemically bonded to the first reaction gas (first reaction material) through pulsing and purge processes, so that a desired thin film is deposited on the substrate. In the above-described atomic layer deposition process, the time during which each reaction gas is subjected to pulsing and purge is referred to as a cycle. Al 2 O 3 , HfO 2 , ZrO 2 , TiO 2, and ZnO are typical examples of thin films that can be formed by the atomic layer deposition method.

Since the atomic layer deposition can form a thin film having an excellent step coverage even at a low temperature of 600 ° C or lower, it is possible to form a thin film having a step coverage that is expected to be used in a process for manufacturing a next- Technology.

In order to use the atomic layer deposition process not only in the semiconductor field but also in the field of display, solar cell, etc., it is necessary to obtain a uniform thin film on a large-area substrate, Sufficient productivity should be ensured.

Accordingly, it is urgently required to develop an atomic layer deposition apparatus capable of simultaneously forming a uniform thin film while loading a plurality of large-area substrates into a single chamber.

An object of the present invention is to provide an atomic layer deposition apparatus capable of continuously performing an atomic layer deposition process while supplying a process gas in a pulse form while loading a plurality of large-area substrates in a chamber at a layered flow interval .

According to an aspect of the present invention, there is provided an atomic layer deposition apparatus including: a process chamber in which an atomic layer deposition process is performed; A substrate loading unit for loading a plurality of substrates into the process chamber at a laminar flow interval; A gate formed on one side wall of the process chamber; A process gas supply unit installed in front of the process chamber for supplying a process gas to a plurality of substrates stacked in the process chamber; And exhaust means installed in the rear of the process chamber for sucking and discharging the gas inside the process chamber.

According to an aspect of the present invention, the process gas supply unit may include a gas injection unit that is formed over the entire front wall of the process chamber and injects gas into the process chamber; A gas diffusion unit disposed behind the gas injection unit and diffusing a gas injected by the gas injection unit over the entire surface of the gas injection unit; And a gas supply line connected to an external gas supply source and supplying a process gas to the gas diffusion unit.

In addition, in the atomic layer deposition apparatus of the present invention, it is preferable that the process gas supply unit is further provided with a driving unit that is installed to be detachable from the process chamber and drives the process gas supply unit.

The substrate loading portion is preferably a cassette for loading a plurality of substrates at a laminar flow interval.

The process chamber may further include a cassette moving unit for horizontally moving the cassette in the process chamber.

According to the present invention, there is an advantage in that the atomic layer deposition process can be uniformly performed without moving the substrate with respect to each substrate in a state that a large number of large-area substrates are loaded in the process chamber. In particular, Layer deposition process is performed, and the throughput is very high.

1 is a view showing a structure of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view showing a structure of a process gas supply unit according to an embodiment of the present invention.
3 is a perspective view showing a structure of a process gas supply unit according to an embodiment of the present invention.
4 is a view showing a structure of an atomic layer deposition apparatus according to another embodiment of the present invention.
5 is a view showing movement of a cassette in an atomic layer deposition apparatus according to another embodiment of the present invention.

Hereinafter, a specific embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1, the atomic layer deposition apparatus 1 according to the present embodiment includes a process chamber 10, a gate portion 20, a process gas supply portion 30, an exhaust means 40, (50).

First, the process chamber 10 is a component for providing a space for performing an atomic layer deposition process, and forms the overall appearance of the atomic layer deposition apparatus 1 according to the present embodiment. The process chamber 10 may have various shapes depending on the shape of the substrate to be processed and has a closed structure in order to maintain a vacuum inside the process chamber 10 during the process. In addition, an opening 12 for a gate unit 20, which will be described later, is formed on one side wall of the process chamber.

Next, the gate 20 is formed on one side wall of the process chamber 10 and provides a path for carrying in and carrying out a substrate to be subjected to an atomic layer deposition process in the process chamber 10. Therefore, the gate unit 20 has a structure capable of opening and closing the opening 12 formed in the process chamber 10, for example, as shown in FIG. 1, 12). ≪ / RTI >

Next, the substrate loading unit 50 is a component for loading a plurality of substrates S in the process chamber 10 at a laminar flow interval. In the atomic layer deposition apparatus 1 according to the present embodiment, an atomic layer deposition process is performed in a state where a plurality of large-area substrates S are stacked at a laminar flow interval. Therefore, the substrate loading unit 50 is to load a large-area substrate to be loaded from the outside into the process chamber 10 while keeping the space between the substrates to be maintained at a laminar flow interval.

In the present embodiment, the substrate loading section 50 may be constituted by a cassette for loading a plurality of substrates S at a laminar flow interval, as shown in Fig. When the cassette is composed of a cassette, the cassette is manufactured to a size such that the cassette can be accurately loaded into the inner space of the process chamber 10. The plurality of large- Is loaded. Since the substrate S is loaded into or discharged from the cassette 50 into the process chamber 10 and the atomic layer deposition process is performed, the process time can be greatly shortened.

Of course, the substrate mounting portion may not have a cassette structure, but may be composed of a substrate insertion groove formed inside the process chamber so that a plurality of substrates can be simply stacked at a laminar flow interval, as described above.

1, the process gas supply unit 30 is installed in front of the process chamber 10 to process a plurality of substrates S loaded in the process chamber 10, . Particularly, in the present embodiment, the process gas supply unit 30 is configured to allow the process gas to pass through the space between the substrates while uniformly maintaining the layer flow gap for the plurality of substrates stacked in the process chamber 10 at the layer- The process gas is supplied.

Herein, the term "laminar flow" refers to a flow of gas which flows in a direction with almost no disturbance in a certain direction without being freely diffused by being injected into a space between narrow spaces.

The term "layer flow spacing" as used herein refers to a distance between two plate materials in which a gas moves in a layered flow form. In this embodiment, the layer flow spacing is preferably 0.2 to 10 mm. When the layer flow interval is less than 0.2 mm, there is a problem that processing and manufacturing are difficult and control of supply of gas is difficult. In the case where the layer flow interval is more than 10 mm, the layer flow of the gas is broken, .

The process gas supply unit 30 may include a gas injection unit 32, a gas diffusion unit 34 and a gas supply line 36 as shown in FIG. 2 . First, the gas injection portion 32 is formed over the entire front wall of the process chamber 10, and is a component that injects gas into the process chamber 10 to maintain a layer flow. 3, the gas injection unit 32 includes a plurality of gas injection openings 32a formed to be spaced apart from each other in correspondence with the distance between the substrates S mounted on the process chamber 10, And the process gas is supplied in a state in which the layer flow is uniformly maintained in the space between the substrates by the gas injection openings 32a.

2, the gas diffusion part 34 is installed behind the gas injection part 32 and injects gas injected by the gas injection part 32 into the gas injection part 32, And spread over the entire surface. In order for the process gas to be uniformly supplied to the spaces between the substrates by the gas injecting unit 32, the gas diffusing unit 34 diffuses the process gas in advance to uniformly pressurize the plurality of gas injection openings 32a It is sprayed.

The gas supply line 36 is connected to an external gas supply source 38 as shown in FIG. 1, and is a component for supplying a process gas to the gas diffusion unit 34. The first and second process gases and the purging gas supplied from the external gas supply source 38 are supplied by the gas supply line 36 in the form of pulses and supplied into the process chamber 10 to perform an atomic layer deposition process .

Meanwhile, in the present embodiment, the process gas supply unit 30 may be installed to be detachable from the process chamber 10. The openings 12 and the gate portions 20 for carrying the substrates in and out of the atomic layer deposition apparatus 1 according to the present embodiment are formed in such a manner as to avoid the side walls of the process gas supply portion 30 The process gas supply unit 30 itself may serve as the gate unit. In this case, as described above, the process gas supply unit itself is detachably installed from the process chamber 10, and a driving unit (not shown in the figure) drives the process gas supply unit in accordance with the loading / unloading operation of the substrate .

1, the exhaust means 40 is installed behind the process chamber 10 and sucks and discharges the gas inside the process chamber 10. The exhaust means 40 performs a function of sucking and discharging the gas in the process chamber 10 to form a vacuum state in the process chamber 10 and discharging the gas in the process chamber 10 during the atomic layer deposition process, (30) sucks the process gas supplied in a pulse form into the process chamber (10), and moves in a state where the process gas maintains a layered flow in a space between the substrates loaded in the process chamber And also serves to exhaust air.

In this embodiment, the atomic layer deposition apparatus 100 may be configured such that only one cassette is loaded, but a structure in which an atomic layer deposition process is performed in a state in which a plurality of cassettes are simultaneously loaded as shown in FIG. 4 It is possible. In order to accommodate the plurality of cassettes 150, a cassette moving unit 160 for horizontally moving the cassette 150 in the process chamber 110 is further provided in the process chamber 110 desirable. As shown in FIG. 5, the cassette moving unit 160 moves the cassette 150, which is brought in through the gate unit 120 from the outside, to the correct position in the process chamber 110 will be. The cassette moving unit 160 may include a cassette moving shuttle that horizontally moves the cassette 150 in the process chamber and a lift pin (not shown) that receives the cassette moved from the cassette moving shuttle .

As shown in Fig. 5, the plurality of cassettes 150 carried in the process chamber 110 are placed in close contact with one another so that the substrates loaded on each cassette are arranged in a straight line, The atomic layer deposition process is continuously performed while the process gas passing between the substrates is passed through the space between the substrates mounted on the adjacent cassettes.

When the atomic layer deposition process is performed in a state where a plurality of cassettes are mounted in the process chamber, it is possible to process a larger number of substrates in a single process, which is advantageous in that the throughput can be formed.

1: An atomic layer deposition apparatus according to an embodiment of the present invention
10: process chamber 20:
30: process gas supply unit 40: exhaust means
50: substrate mounting part S: substrate

Claims (5)

A process chamber in which an atomic layer deposition process is performed;
A substrate loading unit for loading a plurality of substrates into the process chamber at a laminar flow interval;
A gate formed on one side wall of the process chamber;
A process gas supply unit installed in front of the process chamber for supplying a process gas to a plurality of substrates stacked in the process chamber;
And exhaust means installed at the rear of the process chamber for sucking and discharging gas inside the process chamber. The process gas supply system according to claim 1,
A gas injecting portion formed over the entire front wall of the process chamber, the gas injecting portion injecting gas into the process chamber;
A gas diffusion unit disposed behind the gas injection unit and diffusing a gas injected by the gas injection unit over the entire surface of the gas injection unit;
And a gas supply line connected to an external gas supply source and supplying a process gas to the gas diffusion unit. 3. The method of claim 2,
Wherein the process gas supply unit is installed to be detachable from the process chamber,
And a driving unit for driving the process gas supply unit. The substrate processing apparatus according to claim 1,
Wherein the cassette is a cassette for stacking a plurality of substrates at a laminar flow interval. 5. The process chamber according to claim 4,
Further comprising a cassette moving unit for horizontally moving the cassette in the process chamber.
KR1020140001245A 2014-01-06 2014-01-06 The apparatus for depositing the atomic layer KR20150081596A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023187257A1 (en) * 2022-03-30 2023-10-05 Beneq Oy Reaction chamber, atomic layer deposition apparatus and a method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023187257A1 (en) * 2022-03-30 2023-10-05 Beneq Oy Reaction chamber, atomic layer deposition apparatus and a method

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