KR20170027490A - LIGHT-EMITTING apparatus AND METHOD OF FABRICATING THE SAME - Google Patents

LIGHT-EMITTING apparatus AND METHOD OF FABRICATING THE SAME Download PDF

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Publication number
KR20170027490A
KR20170027490A KR1020150124187A KR20150124187A KR20170027490A KR 20170027490 A KR20170027490 A KR 20170027490A KR 1020150124187 A KR1020150124187 A KR 1020150124187A KR 20150124187 A KR20150124187 A KR 20150124187A KR 20170027490 A KR20170027490 A KR 20170027490A
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South Korea
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body portion
electrode
insulating layer
semiconductor layer
layer
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KR1020150124187A
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Korean (ko)
Inventor
오세희
이준섭
강민우
김재권
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서울바이오시스 주식회사
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Priority to KR1020150124187A priority Critical patent/KR20170027490A/en
Publication of KR20170027490A publication Critical patent/KR20170027490A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a second conductive semiconductor layer, A light emitting structure including at least one contact hole; A first electrode located on a portion of the first conductive semiconductor layer exposed by the contact hole and including a body portion and an extension extending from the body portion; A first insulation layer located on the upper surface of the light emitting structure and including a first opening exposing the first electrode and a second opening exposing the second conductivity type semiconductor layer; A second electrode located on the second conductive type semiconductor layer and in contact with the second conductive type semiconductor layer through the second opening; And a second insulating layer covering the first insulating layer and partially covering the first electrode and the second electrode, wherein a thickness of the body portion may be greater than a thickness of the extending portion.

Description

TECHNICAL FIELD [0001] The present invention relates to a light-emitting device and a method of manufacturing the same. BACKGROUND ART [0002] LIGHT-EMITTING APPARATUS AND METHOD OF FABRICATING THE SAME [

The present invention relates to a light emitting device, and more particularly, to a light emitting device in which a first electrode includes a body portion and an extended portion, and the thickness of the body portion is larger than the thickness of the extended portion.

Light emitting diodes (LEDs) are solid state devices that convert electrical energy into light. BACKGROUND ART Light emitting diodes (LEDs) are widely used for various light sources, lights, signal devices, large displays, and the like used for backlights and the like, and they can be used in the form of light emitting devices together with circuit boards and encapsulants.

Generally, a part of the n-type semiconductor layer is exposed by removing a part of the p-type semiconductor layer and the active layer, and the n-type electrode is positioned in the exposed region. At this time, there is a height difference between the p-type electrode in contact with the p-type semiconductor layer and the n-type electrode, thereby preventing the light emitting element from being stably mounted at the time of mounting the light emitting element.

On the other hand, an insulating layer may be disposed on the upper surface of the light emitting diode to protect the light emitting diode, and the insulating layer may be a distributed Bragg reflector. However, in the case of a distributed Bragg reflector placed in contact with the side surface of the electrode, a problem arises in that a crack is generated in the distributed Bragg reflector. Accordingly, the reliability of the light emitting diode is lowered, the reflectance is lowered, the forward voltage Vf is increased, and the output voltage is decreased.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device which can be stably mounted on a circuit board by reducing the height difference between the first electrode and the second electrode.

Another problem to be solved by the present invention is to prevent generation of cracks in the distributed Bragg reflector, thereby providing a light emitting device having excellent reliability.

Another object to be solved by the present invention is to provide a light emitting device in which cracking of the distributed Bragg reflector is prevented so that the reflectance is improved and the forward voltage can be reduced and the output voltage can be increased.

The light emitting device according to an embodiment of the present invention includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, and a second conductive semiconductor layer, A light emitting structure including at least one contact hole; A first electrode located on a portion of the first conductive semiconductor layer exposed by the contact hole and including a body portion and an extension extending from the body portion; A first insulation layer located on the upper surface of the light emitting structure and including a first opening exposing the first electrode and a second opening exposing the second conductivity type semiconductor layer; A second electrode located on the second conductive type semiconductor layer and in contact with the second conductive type semiconductor layer through the second opening; And a second insulating layer covering the first insulating layer and partially covering the first electrode and the second electrode, wherein a thickness of the body portion may be greater than a thickness of the extending portion.

And a portion of the first insulating layer extends from a portion located on the upper surface of the light emitting structure to cover a side surface of the first electrode.

And a portion of the second insulating layer may be located on a portion of the first insulating layer located on a side surface of the first electrode.

The first insulating layer may include SiO 2 , and the second insulating layer may include a distributed Bragg reflector.

The second insulating layer may include a structure in which a TiO 2 layer / SiO 2 layer is alternately repeatedly laminated.

The body portion may include: a first body portion contacting the first conductive semiconductor layer; And a second body portion positioned on the first body portion.

The width of the first body may be greater than the width of the extension.

The second body portion and the second electrode may be made of the same material.

A portion of the first insulating layer may be located on the upper surface of the first body portion.

The angle formed between the side surface of the first main body portion and the lower surface of the first main body portion and the angle between the side surface of the extended portion and the lower surface of the extended portion may be from 69 degrees to 76 degrees.

Wherein the first conductive semiconductor layer includes a first side, a second side disposed opposite to the first side, and a third side positioned between the first side and the second side, And the extension extends from the body portion toward the second side and may be parallel to the third side.

The light emitting device further includes a first pad and a second pad which are located on the second insulating layer and are electrically connected to the body and the second electrode, Can be spaced apart.

The main body and the first pad may overlap each other in the vertical direction.

A method of manufacturing a light emitting device according to another embodiment of the present invention includes forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, and partially etching the second conductive semiconductor layer and the active layer, A first main body portion formed on a portion of the first conductivity type semiconductor layer exposed by the contact hole and a second main body portion located on a portion of the first conductivity type semiconductor layer exposed by the contact hole, A first opening portion for exposing the first main body portion and a second opening portion for exposing the second conductivity type semiconductor layer, the first opening portion being formed on an upper surface of the light emitting structure and extending from the first main body portion, Forming a second body portion located on the first body portion to form a body portion including the first body portion and the second body portion, Forming a second electrode on the conductive layer, the second electrode being in contact with the second conductive type semiconductor layer through the second opening; And forming a second insulating layer covering the first insulating layer and partially covering the body portion and the second electrode, wherein the thickness of the body portion may be greater than the thickness of the extended portion.

A portion of the first insulating layer may extend from a portion located on the upper surface of the light emitting structure to cover the side surface of the first electrode.

And a portion of the second insulating layer may be located on a portion of the first insulating layer located on a side surface of the first electrode.

The first insulating layer may include SiO 2 , and the second insulating layer may include a distributed Bragg reflector.

The angle formed between the side surface of the first main body portion and the lower surface of the first main body portion and the angle between the side surface of the extended portion and the lower surface of the extended portion may be from 69 degrees to 76 degrees.

The second body portion and the second electrode may be formed at the same time.

The second body portion and the second electrode may be made of the same material.

According to the present invention, since the height difference between the first electrode and the second electrode can be reduced, the light emitting device can be stably mounted on the circuit board. Furthermore, since the first insulating layer is disposed on the side surface of the first electrode, the second insulating layer does not directly contact the first electrode. Therefore, cracking of the second insulating layer located on the first insulating layer can be prevented. Further, the film quality of the second insulating layer can be improved by the first insulating layer. As a result, the reflectance increases, the forward voltage decreases, the output voltage increases, and the immunity against ESD (Electrostatic discharge) can be improved. In addition, since the first insulating layer is formed after the first electrode is formed, the first insulating layer can cover the side surface and the upper surface of the first electrode, so that when the second electrode is formed, the first electrode is damaged by the etching solution Can be prevented.

1 is a plan view illustrating a light emitting device according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line A-A 'in FIG. 1 and an enlarged view showing an enlarged view of the region C-C' in the sectional view.
3 is a cross-sectional view taken along line B-B 'in Fig.
4 is an enlarged photograph of a part (a) of the light emitting device not using the first insulating layer and a part (b) of the light emitting device according to the embodiment of the present invention.
5 is an enlarged view of a portion of a light emitting device according to another embodiment of the present invention.
6 to 11 are a plan view and a cross-sectional view for explaining a method of manufacturing a light emitting device according to another embodiment of the present invention.
12 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.
13 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
14 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
15 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.

1 to 3 are views for explaining the structure of a light emitting device according to an embodiment of the present invention. 1 is a plan view illustrating a light emitting device according to an exemplary embodiment of the present invention. 1 (a) is an enlarged view of I1 in Fig. 1 (a), and Fig. 1 (c) is a cross- Fig. 2 is an enlarged view of I2 of Fig. FIG. 2 is a cross-sectional view (A) taken along line A-A 'of FIG. 1 and an enlarged view (B) of FIG. 1 taken along line B-B' Sectional view.

Referring to FIG. 1, a light emitting device according to an embodiment of the present invention includes a light emitting structure 110, a first electrode 120, a first insulating layer 130, a second electrode 140, And may further include a substrate 100, a first pad 171, and a second pad 172.

The substrate 100 is not limited as long as it can grow the first conductivity type semiconductor layer 111, the active layer 112 and the second conductivity type semiconductor layer 113. For example, a sapphire substrate, a silicon carbide A substrate, a gallium nitride substrate, an aluminum nitride substrate, a silicon substrate, or the like. In particular, in this embodiment, the substrate 110 may be a patterned sapphire substrate (PSS).

The light emitting structure 110 includes a first conductive semiconductor layer 111, an active layer 112 disposed on the first conductive semiconductor layer 111, and a second conductive semiconductor layer 113 disposed on the active layer. do. The first conductivity type semiconductor layer 111, the active layer 112 and the second conductivity type semiconductor layer 113 may include a III-V compound semiconductor and may include, for example, (Al, Ga, In) And may include the same nitride-based semiconductor. The first conductivity type semiconductor layer 111 may include an n-type impurity (for example, Si). 1, the first conductive semiconductor layer 111 includes a first side surface 111a, a second side surface 111b positioned opposite to the first side surface 111a, and a first side surface 111a. And a third side 111c positioned between the first side 111b and the second side 111b. The second conductivity type semiconductor layer 113 may include a p-type impurity (for example, Mg). It may also be the opposite. The active layer 112 may comprise a multiple quantum well structure (MQW) and its composition ratio may be determined to emit light of a desired peak wavelength.

The light emitting structure 110 may include at least one contact hole H that exposes the first conductive semiconductor layer 111 through the second conductive semiconductor layer 113 and the active layer 112. The contact hole H may be formed by partially removing the second conductive type semiconductor layer 113 and the active layer 112. The side surface of the contact hole H may include an inclined side surface as shown in FIG. The inclined side surface of the contact hole (H) improves the extraction efficiency of the light generated in the active layer (112).

The contact hole H may include at least one first contact hole H1. The first contact hole H1 may include a first contact area H11 and a second contact area H12. The first contact area H11 may be circular but is not necessarily limited thereto. The second contact area H12 extends from the first contact area H11 and may be linear. The contact hole H may further include at least one second contact hole H2. The second contact hole H2 may extend a region where the first electrode 120 and the first conductive type semiconductor layer 111 can be electrically connected. Therefore, the current dispersion efficiency can be improved, and the luminous efficiency can be improved.

The first electrode 120 may be located in the contact hole H. [ The first electrode 120 may be located on the upper surface of the first conductive semiconductor layer 111 exposed by the contact hole H. [ Accordingly, the first electrode 120 can be electrically connected to the first conductive type semiconductor layer 111. The first electrode 120 may be spaced apart from the side surface of the contact hole H. Accordingly, the first electrode 120 may be electrically insulated from the active layer 112 and the second conductive type semiconductor layer 113. The spacing space between the first electrode 120 and the side surface of the contact hole H may be filled with a first insulating layer 130 and a second insulating layer 160, which will be described later. The height of the first electrode 120 may be less than or equal to the height of the contact hole H.

The first electrode 120 may include a highly reflective metal layer such as an Al layer and the highly reflective metal layer may be formed on an adhesive layer such as Ti, Cr, or Ni. Further, a protective layer of a single layer or a multiple layer structure such as Ni, Cr, Au or the like may be formed on the highly reflective metal layer. The first electrode 120 may have a multilayer structure of Ti / Al / Ti / Ni / Au, for example. The first electrode 120 may be formed by depositing a metal material and patterning the metal material. However, the present invention is not limited thereto.

The first electrode 120 may be formed along the shape of the contact hole H. [ 1, when the first contact hole H1 includes a circular first contact area H11 and a linear second contact area H12, the first electrode 120 also has the shape And may thus include portions of circular shape and portions of linear shape. In addition, when the second contact hole H2 is circular, the shape of the first electrode 120 located in the second contact hole H2 may also be circular.

The first electrode 120 may include a body portion 121 and an extension portion 122.

The main body 121 may be located in the first contact hole H1 and the second contact hole H2. Specifically, a portion of the main body 121 located in the first contact hole H1 can be electrically connected to the upper surface of the first conductive type semiconductor layer 111 exposed by the first contact region H11. The main body 121 may be adjacent to the first side 111a rather than the second side 111b.

The extended portion can be electrically connected to the upper surface of the first conductive type semiconductor layer 111 exposed by the second contact region H12. The extension portion 122 extends from the main body portion 121 toward the second side surface 111b and may be parallel to the third side surface 111c. Further, a part of the distal end of the extension portion 122 may be adjacent to the second side surface 111b. Therefore, it is possible to prevent the current from concentrating on the portion of the first conductive type semiconductor layer 111 located under the main body 121 and to smoothly distribute the current to the region adjacent to the second side 111b .

The first electrode 120 is located along the first contact hole H1 so that the main body 121 is circular and the extension 122 is connected to the third side 111c, And may be linear.

The thickness of the body portion 121 may be greater than the thickness of the extension portion 122. The height difference between the first electrode 120 and the second electrode 140 generated by the contact hole H can be reduced so that the distance between the upper surface of the first pad 171 and the lower surface of the second pad 172, The step can be reduced, and the light emitting element can be stably mounted.

The main body 121 may include a first main body 121a and a second main body 121b.

The first main body portion 121a may be in contact with the first conductivity type semiconductor layer 111. The first body portion 121a may have the same thickness as the extension portion 122, but is not limited thereto. The width W1 of the first main body portion 121a may be larger than the width W2 of the extending portion 122. [ Therefore, the current can be easily dispersed around the extension portion 122, and at the same time, the light emission region around the extension portion 122 can be further secured.

The second body 121b may be positioned on the first body 121a. 2, the second main body 121b is positioned on the upper surface of the first main body 121a through the first opening 130a, and electrically connected to the first main body 121a through the first opening 130a. . The second body portion 121b may not be positioned on the extension portion 122. [ 2, since the second main body 121b can be limited on the first main body 121a, the upper surface of the first pad 171, which will be described later, Can be reduced, and the light emitting element can be stably mounted. However, the position of the second main body 121b is not necessarily limited to the above-described position.

The second body portion 121b covers the upper surface of the first body portion 121a, thereby preventing the material of the first pad 171, which will be described later, from diffusing into the first body portion 121a. 2, the angle formed between the side surface of the second main body 121b and the lower surface of the first main body 121a is equal to the angle between the side surface of the first main body 121a and the first main body 121a, The angle of the lower surface of the base plate may be larger than the angle formed by the lower surface of Accordingly, the upper surface of the second main body 121b can be secured over a certain width, so that a smooth electrical connection between the first pad 171 and the second main body 121b is possible. The second body portion 121b may be formed of the same material as the second electrode 140. [ Accordingly, the second body 121b may also reflect light generated in the active layer 112. [

The first insulating layer 130 may be located on the upper surface of the light emitting structure 110. The first insulating layer 130 may extend from a portion located on the upper surface of the light emitting structure 110 to cover the side surface of the first electrode 120. Specifically, the first insulating layer 130 may be located on the side surfaces of the first main body portion 121a and on the side surfaces of the extending portion 122. [ 2, the first insulating layer 130 may be located on the side of the active layer 112 and the side of the second conductive type semiconductor layer 113 in the contact hole H, And may be located on the upper surface of the second conductive type semiconductor layer 113. [ The first insulating layer 130 may extend on the side surface of the first main body portion 121a and may be located on the upper surface of the first main body portion 121a. When the first insulating layer 130 is located on the first main body 121a, the second electrode 140 is formed by a first main body 121a Can be prevented from being damaged. Therefore, the current flow of the first electrode 120 can be improved, so that the luminous efficiency can be improved. Since the second insulating layer 160 does not directly contact the first body 121a by the first insulating layer 130, the side surface of the first body 121a of the second insulating layer 160 The occurrence of cracks in adjacent areas can be reduced.

The first insulating layer 130 may include an insulating material, for example, SiO 2 , SiN x , MgF 2, or the like. In some embodiments, the first insulating layer 130 may serve as a basal layer for the other layers formed on the first insulating layer 130. For example, when the second insulating layer 160, which will be described later, includes a distributed Bragg reflector, the first insulating layer 130 may serve as an underlying layer to allow the distributed Bragg reflector to be stably formed, The cracking of the reflector can be minimized, and the resistance to ESD (Electrostatic discharge) can be improved. When the distributed Bragg reflector has a structure of alternately stacked TiO 2 layer / SiO 2 layer, the first insulating layer 130 may be formed of a SiO 2 layer having a thickness of a predetermined thickness or more. For example, the predetermined thickness may be about 0.2 탆 to 1.0 탆. In order to form a good-quality distributed Bragg reflector, it is preferable that the base layer on which the distributed Bragg reflector is deposited has excellent film quality and surface characteristics. Therefore, the distributed Bragg reflector can be stably manufactured on the first insulating layer 130 by forming the first insulating layer 130 to a thickness of a predetermined thickness or more.

The first insulating layer 130 may include a first opening 130a for exposing the first electrode 120 and a second opening 130b for exposing the second conductivity type semiconductor layer 113. Portions exposed by the first opening 130a and the second opening 130b may correspond to positions of the second main body 121b and the second electrode 160, which will be described later.

The second electrode 140 may be located on the second conductive type semiconductor layer 113. In detail, the second electrode 140 may be in electrical contact with the second conductive type semiconductor layer 113 through the second opening 130b. As shown in FIGS. 2 and 3, the second electrode 140 may be positioned on the upper surface of the second conductive semiconductor layer 113. The second electrode 140 may not be formed in a region corresponding to the contact hole H and thus the second electrode 140 may be insulated from the first conductivity type semiconductor layer 111. [

The second electrode 140 may include a reflective layer and a protective layer covering the reflective layer. The second electrode 140 may be in ohmic contact with the second conductive semiconductor layer 113 and reflect light. Accordingly, the reflective layer may include a metal having high reflectivity and capable of forming ohmic contact with the second conductive type semiconductor layer 113. For example, the reflective layer may include at least one of Ni, Pt, Pd, Rh, W, Ti, Al, Ag and Au. Also, the reflective layer may comprise a single layer or multiple layers.

The protective layer can prevent mutual diffusion between the reflective layer and other materials, and can prevent other external materials from diffusing to the reflective layer and damaging the reflective layer. Therefore, the protective layer may be formed to cover the bottom surface and the side surface of the reflective layer. The protective layer may be electrically connected to the second conductivity type semiconductor layer 113 together with the reflective layer, so that the protective layer may function as an electrode together with the reflective layer. The protective layer may include at least one of, for example, Au, Ni, Ti, and Cr, and may include a single layer or multiple layers.

Alternatively, the second electrode 140 may comprise a transparent conductive material. The transparent conductive material may form an ohmic contact with the second conductive semiconductor layer 113 and may include at least one of ITO, ZnO, IZO, and Ni / Au, for example. When the second electrode 140 includes a transparent conductive material, the second insulating layer 160, which will be described later, is formed to include a reflective layer.

The second insulating layer 160 may cover the first insulating layer 130 and partially cover the second body 121b and the second electrode 140. [ As shown in FIGS. 2 and 3, a part of the second insulating layer 160 may be located on a portion of the first insulating layer 130 located on the side surface of the first electrode 120. In this case, since the second insulating layer 160 does not directly contact the side surface of the first main body portion 121a, the occurrence of cracks can be minimized and the film quality or crystallinity of the second insulating layer 160 can be improved . 4, since the second insulating layer 160 is in direct contact with the first main body 121a in the case of the light emitting device a that does not include the first insulating layer 130, 2 insulating layer 160 contains more and larger cracks. On the other hand, in the light emitting device according to the present embodiment shown in FIG. 4B, since the second insulating layer 160 is located on the first main body 121a and the first insulating layer 130, The first main body portion 121 is separated from the first main body portion 121a.

Further, the second insulating layer 160 may partly cover the upper surface of the second main body 121b and the upper surface of the second electrode 140. The second insulating layer 160 may include a third opening 160a exposing the second body 121b and a fourth opening 160b exposing the second electrode.

The second insulating layer 160 may include an insulating material, for example, SiO 2 , SiN x , MgF 2, or the like. In some embodiments, the second insulating layer 160 may comprise a distributed Bragg reflector. The distributed Bragg reflector may be formed by repeatedly stacking dielectric layers having different refractive indexes, and may have a structure of alternately stacked TiO 2 layer / SiO 2 layer, for example. Each layer of the distributed Bragg reflector may have an optical thickness of 1/4 of a specific wavelength and may be formed of 4 to 20 pairs. However, the present invention is not limited thereto. In addition, when the second insulating layer 160 is formed of multiple layers, the uppermost layer of the second insulating layer 160 may be formed of SiN x . The layer formed of SiNx is excellent in moisture-proof property, so that the light-emitting diode can be protected from moisture.

When the second insulating layer 160 includes a distributed Bragg reflector, the first insulating layer 130 may serve as a base layer or an interface layer capable of improving the film quality of the distributed Bragg reflector. Therefore, the film quality of the second insulating layer 160 is improved by the first insulating layer 130 located on the side surface of the first main body portion 121a and the side surface of the extended portion 122, And resistance to ESD can be enhanced.

The first pad 171 and the second pad 172 may be located on the second insulating layer 160. 1 to 3, the first pad 171 and the second pad 172 are electrically connected to the second body 121b and the second electrode 140, respectively. The first pad 171 may be in contact with the second body 121b through the third opening 160a and the second pad 172 may be in contact with the second electrode 140b through the fourth opening 160b. ). The first pad 171 may be located on at least a portion of the first electrode 120. 1 and 2, the first pad 171 may overlap with the main body 121 in the vertical direction. The second pad 172 may overlap the extending portion 122 in the vertical direction. The first pad 171 and the second pad 172 are spaced apart from each other and electrically insulated. The first pad 171 and the second pad 172 may include an adhesive layer of Ti, Cr, Ni or the like and a high conductivity layer of metal such as Al, Cu, Ag or Au. However, the present invention is not limited thereto.

5 is an enlarged view of a portion of a light emitting device according to another embodiment of the present invention. Referring to FIG. 5, the light emitting device according to the present embodiment is similar to the light emitting device described with reference to FIGS. 1 to 4, except that the angle formed by the side surface of the first main body portion 121a and the lower surface of the first main body portion 121a . Hereinafter, the differences will be mainly described.

The angle between the side surface of the first main body portion 121a and the lower surface of the first main body portion 121a may be 76 degrees or less, specifically, 69 degrees to 76 degrees. When the angular range is satisfied, the height difference between the first electrode 120 and the second electrode 140 is maintained at a certain level, and cracking of the second insulating layer 160 can be minimized. In this embodiment, the angle formed between the side surface of the first main body portion 121a and the lower surface of the first main body portion 121a is 71.7 degrees. As shown in FIG. 5, the second insulating layer 160 has almost no crack Does not occur. Further, when the angular range is satisfied, the height difference between the first electrode 120 and the second electrode 140 can be compensated for by the second body portion 121b, and accordingly, the light emitting element can be stably mounted .

6 to 11 are views for explaining a method of manufacturing a light emitting device according to another embodiment of the present invention.

Referring to FIG. 6, a first conductive semiconductor layer 111, an active layer 112, and a second conductive semiconductor layer 113 are sequentially formed on an upper surface of a substrate 100. Referring to FIG. The substrate 100 is not limited as long as it can grow the light emitting structure 110. For example, the substrate 100 may be a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. The first conductive semiconductor layer 111, the active layer 112 and the second conductive semiconductor layer 113 are formed on the substrate 100 using techniques such as metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) ). ≪ / RTI > The substrate 100 may be removed through a laser lift off (LLO) or the like after the light emitting device is manufactured.

Referring to FIG. 7, a contact hole H may be formed in the light emitting structure 110. Specifically, the contact hole H may be formed by patterning the second conductive type semiconductor layer 113 and the active layer 112 to expose the first conductive type semiconductor layer 111. The side surface of the contact hole H can be formed obliquely by using a technique such as photoresist reflow. 7A, the first contact hole H1 may include a circular first contact area H11 and a linear second contact area H12, and a second contact hole H11 H2 may be circular but are not necessarily limited thereto.

Referring to FIG. 8, the first body 121a and the extension 122 may be formed in the contact hole H. The first body portion 121a and the extension portion 122 may be formed along the shape of the contact hole H using a mask. The first body 121a and the extension 122 may be formed using techniques such as electron beam evaporation, vacuum evaporation, sputtering, or metal organic chemical vapor deposition (MOCVD).

Referring to FIGS. 9A and 9B, the first insulating layer 130 may be formed to cover at least a part of the light emitting structure 110 and the first main body 121a. A part of the first insulating layer 130 may cover the upper surface of the light emitting structure 110 and the side surface of the first body 121a and may include a first opening 130a exposing the first body 121a, And a second opening 130b exposing the conductive type semiconductor layer 113. [ The first insulating layer 130 may be formed as a single layer or multiple layers using a technique such as chemical vapor deposition (CVD). The first opening 130a and the second opening 130b may be formed by using a mask or by etching after deposition of the first insulating layer 130, but are not limited thereto.

Referring to FIGS. 9A and 9B, a second electrode 140 may be formed on the second conductive semiconductor layer 113. In detail, the second electrode 140 may be formed on the upper surface of the second conductive semiconductor layer 113 through the second opening 130b. Also, the second body portion 121b may be formed on the first body portion 121a. Specifically, the second main body 121b may be formed on the upper surface of the first main body 121a through the first opening 130a. The second electrode 140 and the second body 121b may be formed using techniques such as electron beam evaporation, vacuum evaporation, sputtering, or metal organic chemical vapor deposition (MOCVD). The second electrode 140 and the second body 121b may be formed in the same process so that the second electrode 140 and the second body 121b may be simultaneously formed. Accordingly, since the number of masks required to form the second electrode 140 and the second main body 121b can be reduced, the process can be simplified. The second electrode 140 and the second body 121b may be made of the same material.

Referring to FIG. 10, the second insulating layer 160 may cover the first insulating layer 130 and may partially cover the second body 121b and the second electrode 140. Referring to FIG. As shown in FIG. 10, a part of the second insulating layer 160 may be formed on a portion of the first insulating layer 130 located on the side surface of the first electrode 120. Specifically, a part of the second insulating layer 160 may be formed on a portion of the first insulating layer 130 located on the side surface of the first body 121a. Or may be formed as a single layer or multiple layers using techniques such as chemical vapor deposition (CVD). Specifically, when the second insulating layer 160 includes a distributed Bragg reflector, the TiO 2 layer / SiO 2 layer may be formed by alternately repeating layers by a technique such as chemical vapor deposition (CVD). The second insulating layer 160 may include a third opening 160a exposing the second body 121b and a fourth opening 160b exposing the second electrode. The third opening 160a and / The fourth opening 160b may be formed by using a mask or by etching after deposition of the second insulating layer 140, but is not limited thereto.

Referring to FIG. 11, a first pad 171 and a second pad 172 may be formed on the second insulating layer 160. The first and second pads 171 and 172 may be formed on the upper surface of the second insulating layer 160 by an electron beam evaporation method, a vacuum evaporation method, a sputtering method, or a metal organic chemical vapor deposition method (MOCVD).

12 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.

Referring to FIG. 12, the illumination device according to the present embodiment includes a diffusion cover 1010, a light emitting device module 1020, and a body part 1030. The body 1030 may receive the light emitting module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the light emitting module 1020.

The body part 1030 is not limited as long as it can receive and support the light emitting element module 1020 and supply the electric power to the light emitting element module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [

The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the light emitting device module 1020, and may include at least one IC chip. The IC chip may control, convert, or control the characteristics of the power supplied to the light emitting device module 1020. The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 . The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 115 may be electrically connected to the power supply unit 1033 in the power supply case 1035 and may serve as a path through which external power may be supplied to the power supply unit 1033. [

The light emitting element module 1020 includes a substrate 1023 and a light emitting element 1021 disposed on the substrate 1023. The light emitting device module 1020 is provided on the body case 1031 and can be electrically connected to the power supply device 1033.

The substrate 1023 is not limited as long as it is a substrate capable of supporting the light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [ The light emitting device 1021 may include at least one of the light emitting devices according to the embodiments of the present invention described above.

The diffusion cover 1010 is disposed on the light emitting element 1021 and may be fixed to the body case 1031 to cover the light emitting element 1021. [ The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.

13 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.

The display device of this embodiment includes a display panel 2110, a backlight unit BLU1 for providing light to the display panel 2110 and a panel guide 2100 for supporting the lower edge of the display panel 2110. [

The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCBs 2112 and 2113 are not formed on a separate PCB, but may be formed on a thin film transistor substrate.

The backlight unit (BLU1) includes a light source module including at least one substrate (2150) and a plurality of light emitting elements (2160). Further, the backlight unit BLU1 may further include a bottom cover 2180, a reflection sheet 2170, a diffusion plate 2131, and optical sheets 2130. [

The bottom cover 2180 is open at the top and can accommodate the substrate 2150, the light emitting element 2160, the reflection sheet 2170, the diffusion plate 2131 and the optical sheets 2130. In addition, the bottom cover 2180 can be engaged with the panel guide 2100. The substrate 2150 may be disposed under the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface. In addition, a plurality of substrates 2150 may be arranged so that a plurality of substrates 2150 are arranged side by side, but it is not limited thereto and may be formed as a single substrate 2150.

The light emitting device 2160 may include at least one of the light emitting devices according to the embodiments of the present invention described above. The light emitting elements 2160 may be regularly arranged on the substrate 2150 in a predetermined pattern. In addition, a lens 2210 is disposed on each light emitting element 2160, so that the uniformity of light emitted from the plurality of light emitting elements 2160 can be improved.

The diffusion plate 2131 and the optical sheets 2130 are placed on the light emitting element 2160. The light emitted from the light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.

14 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment is applied to a display device.

The display device having the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit BLU2 disposed on the back surface of the display panel 3210 to emit light. The display device further includes a frame 240 supporting the display panel 3210 and storing the backlight unit BLU2 and covers 3240 and 3280 surrounding the display panel 3210. [

The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate. The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit BLU2.

The backlight unit BLU2 for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the upper surface thereof, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 for converting the light into the plane light. The backlight unit BLU2 of the present embodiment is disposed on the light guide plate 3250 and includes optical sheets 3230 for diffusing and condensing light, a light guide plate 3250 disposed below the light guide plate 3250, And a reflective sheet 3260 that reflects the light toward the display panel 3210. [

The light source module includes a substrate 3220 and a plurality of light emitting devices 3110 disposed on a surface of the substrate 3220 at predetermined intervals. The substrate 3220 is not limited as long as it supports the light emitting element 3110 and is electrically connected to the light emitting element 3110, for example, it may be a printed circuit board. The light emitting device 3110 may include at least one light emitting device according to the embodiments of the present invention described above. The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. Through the light guide plate 3250 and the optical sheets 3230, the point light source emitted from the light emitting elements 3110 can be transformed into a surface light source.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the edge display device as in the present embodiment.

15 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

15, the head lamp includes a lamp body 4070, a substrate 4020, a light emitting element 4010, and a cover lens 4050. Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.

Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070. The substrate 4020 is not limited as long as it can support the light emitting element 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [ Also, the light emitting device 4010 may be electrically connected to an external power source through the conductive pattern of the substrate 4020. In addition, the light emitting device 4010 may include at least one light emitting device according to the embodiments of the present invention described above.

The cover lens 4050 is located on the path through which light emitted from the light emitting element 4010 travels. For example, as shown, the cover lens 4050 may be disposed apart from the light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is to be emitted from the light emitting device 4010 . The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted. The connecting member 4040 may serve as a light guide for fixing the cover lens 4050 to the substrate 4020 and for arranging the light emitting element 4010 to provide the light emitting path 4045. [ At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate heat generated when the light emitting device 4010 is driven.

As described above, the light emitting device according to the embodiments of the present invention can be applied to a head lamp as in the present embodiment, particularly, a headlamp for a vehicle.

Claims (20)

A light emitting structure including a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and at least one contact hole penetrating the second conductivity type semiconductor layer and the active layer to expose the first conductivity type semiconductor layer;
A first electrode located on a portion of the first conductive semiconductor layer exposed by the contact hole and including a body portion and an extension extending from the body portion;
A first insulation layer located on the upper surface of the light emitting structure and including a first opening exposing the first electrode and a second opening exposing the second conductivity type semiconductor layer;
A second electrode located on the second conductive type semiconductor layer and in contact with the second conductive type semiconductor layer through the second opening; And
And a second insulating layer covering the first insulating layer and partially covering the first electrode and the second electrode,
Wherein a thickness of the body portion is larger than a thickness of the extension portion.
The method according to claim 1,
And a portion of the first insulating layer extends from a portion located on the upper surface of the light emitting structure to cover a side surface of the first electrode.
The method of claim 2,
And a portion of the second insulating layer is located on a portion of the first insulating layer that is located on a side surface of the first electrode.
The method of claim 3,
The first insulating layer comprises SiO 2,
Wherein the second insulating layer comprises a distributed Bragg reflector.
The method of claim 4,
Wherein the second insulating layer includes a structure in which a TiO 2 layer / an SiO 2 layer are alternately repeatedly laminated.
The method according to claim 1,
Wherein,
A first body portion contacting the first conductive semiconductor layer; And
And a second body portion located on the first body portion.
The method of claim 6,
Wherein a width of the first body portion is larger than a width of the extended portion.
The method of claim 6,
And the second body portion and the second electrode are made of the same material.
The method of claim 6,
And a part of the first insulating layer is located on the upper surface of the first body part.
The method of claim 6,
Wherein an angle formed between a side surface of the first main body portion and a lower surface of the first main body portion and an angle between a side surface of the extending portion and a lower surface of the extending portion is from 69 degrees to 76 degrees.
The method according to claim 1,
Wherein the first conductive semiconductor layer includes a first side, a second side positioned opposite to the first side, and a third side positioned between the first side and the second side,
The body portion being adjacent to the first side than the second side,
Wherein the extension extends from the body portion toward the second side and is in parallel with the third side.
The method according to claim 1,
Further comprising first and second pads located on the second insulating layer and electrically connected to the body portion and the second electrode, respectively, wherein the first pad and the second pad are spaced apart from each other, .
The method of claim 10,
And the main body and the first pad overlap each other in the vertical direction.
A first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are formed on a growth substrate,
Forming a light emitting structure having at least one contact hole for partially etching the second conductivity type semiconductor layer and the active layer to expose the first conductivity type semiconductor layer,
A first main body portion located on a portion of the first conductive type semiconductor layer exposed by the contact hole and an extension extending from the first main body portion,
Forming a first insulating layer on the upper surface of the light emitting structure and including a first opening exposing the first body portion and a second opening exposing the second conductive semiconductor layer,
A second body portion positioned on the first body portion to form a body portion including the first body portion and the second body portion,
Forming a second electrode on the second conductive type semiconductor layer, the second electrode being in contact with the second conductive type semiconductor layer through the second opening; And
Forming a second insulating layer covering the first insulating layer and partially covering the body portion and the second electrode,
Wherein a thickness of the main body portion is larger than a thickness of the extended portion.
15. The method of claim 14,
Wherein a portion of the first insulating layer extends from a portion located on the upper surface of the light emitting structure to cover a side surface of the first electrode.
16. The method of claim 15,
Wherein a portion of the second insulating layer is located on a portion of the first insulating layer that is located on a side surface of the first electrode.
18. The method of claim 16,
The first insulating layer comprises SiO 2,
Wherein the second insulating layer comprises a distributed Bragg reflector.
18. The method of claim 17,
Wherein an angle formed between a side surface of the first main body portion and a lower surface of the first main body portion and an angle between a side surface of the extended portion and a lower surface of the extended portion is from 69 degrees to 76 degrees.
19. The method of claim 18,
Wherein the second body portion and the second electrode are simultaneously formed.
The method of claim 19,
Wherein the second body portion and the second electrode are made of the same material.
KR1020150124187A 2015-09-02 2015-09-02 LIGHT-EMITTING apparatus AND METHOD OF FABRICATING THE SAME KR20170027490A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108878600A (en) * 2018-06-21 2018-11-23 厦门乾照光电股份有限公司 The flip-chip and its manufacturing method of light emitting diode
CN114188447A (en) * 2020-09-14 2022-03-15 厦门乾照光电股份有限公司 LED chip with flattened insulating layer and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108878600A (en) * 2018-06-21 2018-11-23 厦门乾照光电股份有限公司 The flip-chip and its manufacturing method of light emitting diode
CN114188447A (en) * 2020-09-14 2022-03-15 厦门乾照光电股份有限公司 LED chip with flattened insulating layer and manufacturing method thereof

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