CN108878600A - The flip-chip and its manufacturing method of light emitting diode - Google Patents
The flip-chip and its manufacturing method of light emitting diode Download PDFInfo
- Publication number
- CN108878600A CN108878600A CN201810644024.9A CN201810644024A CN108878600A CN 108878600 A CN108878600 A CN 108878600A CN 201810644024 A CN201810644024 A CN 201810644024A CN 108878600 A CN108878600 A CN 108878600A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- type layer
- flip
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011265 semifinished product Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 17
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000001272 nitrous oxide Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000001351 cycling effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
- 239000011651 chromium Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 238000001459 lithography Methods 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 12
- 239000010931 gold Substances 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H01L33/48—
-
- H01L33/005—
-
- H01L33/10—
-
- H01L33/38—
-
- H01L33/54—
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses the flip-chip of a light emitting diode and its manufacturing methods, wherein the flip-chip includes a substrate, one N-type layer, one active area, one P-type layer, an at least reflecting layer, one insulating layer, one Distributed Bragg Reflection layer, one N-type electrode and a P-type electrode, the substrate, the N-type layer, the active area and the P-type layer stack gradually, the exposed portion of a N-type layer of the flip-chip extends to the N-type layer from active area described in the p-type Cheng Jing, the reflecting layer is grown on the P-type layer, the insulating layer growth is in the N-type layer, the active area, the P-type layer and the reflecting layer, the Distributed Bragg Reflection layer is grown on the insulating layer, the N-type electrode and the P-type electrode are electrically connected in the N-type layer and the P-type layer.
Description
Technical field
The present invention relates to a LED chip, the in particular to flip-chips and its manufacturing method of a light emitting diode.
Background technique
As the field of light emitting diode (Light-Emitting diode, LED) illumination application is more and more extensive, make
It has also obtained advancing by leaps and bounds the development of formula for the chip technology of the core component of light emitting diode.Currently, the one kind generallyd use
The chip of light emitting diode is positive cartridge chip, its main feature is that light-emitting surface and conductive electrode are located at the same side of positive cartridge chip, this makes
Obtaining conductive electrode can shut out the light and cause the area of the light-emitting surface of positive cartridge chip limited.In order to increase the core of light emitting diode
The lighting area of piece, a kind of flip-chip come into being, and unlike positive cartridge chip, the conductive electrode of flip-chip and go out
Smooth surface is located at the not ipsilateral of flip-chip, shuts out the light to avoid conductive electrode.Although this flip-chip overcomes positive cored
The conductive electrode of piece shuts out the light and the problem that causes the area of light-emitting surface limited, but this flip-chip using P electrode and
N electrode the structure of formula and is interspersed on the surface of flip-chip straight up and down, this leads to the Welder in production flip-chip
High-precision Alignment Process is required during skill, difficulty is bigger, and yield is lower.Existing flip-chip uses electrode two
P electrode and N electrode, are distributed in the both ends of flip-chip by the structure of secondary distribution, will to be conducive to the downstream manufacturers of chip
It is encapsulated as final products, and this structure of existing flip-chip overcomes the fault of construction of the flip-chip of early stage, and
Because existing flip-chip is convenient for being encapsulated by downstream manufacturers and being become very popular.Nevertheless, existing flip-chip
Still the reliability and product yield of flip-chip are influenced with defect.Specifically, in production P electrode and N electrode distribution
The critical process during flip-chip at the both ends of flip-chip is the insulating layer production of electrode quadratic distribution, conventional
Insulating layer distributed bragg reflector mirror (Distributed Bragg Reflector, DBR) is made using vapor deposition mode,
It can play insulating effect and albedo, but be deposited distributed bragg reflector mirror that mode makes by
It is limited to the directionality and vapor deposition vapour particle size of vapor deposition, causes the step coverage of distributed bragg reflector mirror poor,
It is easy to cause the bad phenomenon leaked electricity at Step Coverage, once and distributed bragg reflector mirror occurs at Step Coverage
The bad phenomenon of electric leakage, then cause flip-chip to fail.Since it is desired that P electrode and N electrode are distinguished in the same side of flip-chip
P-type layer and N-type layer is connected, so that there is very more steps in the structure of existing flip-chip, due to distributed Bradley
The step coverage of lattice reflecting mirror is poor, to be easier to occur leaking electricity not in the structure of the numerous flip-chip of step
Good phenomenon.
Summary of the invention
It is an object of the present invention to provide the flip-chip of a light emitting diode and its manufacturing methods, wherein described
Flip-chip provides a Distributed Bragg Reflection layer, wherein the step coverage of the Distributed Bragg Reflection layer is big
It improves to amplitude, the bad phenomenon leaked electricity occurs to avoid the flip-chip, to guarantee the reliability of the flip-chip
With the product yield for improving the flip-chip.
It is an object of the present invention to provide the flip-chip of a light emitting diode and its manufacturing methods, wherein described
Flip-chip provides an insulating layer, and the Distributed Bragg Reflection is laminated on the insulating layer layer by layer, by the insulating layer every
The distribution can be significantly increased in mode from the Distributed Bragg Reflection layer and the step of the flip-chip
The step coverage of Bragg reflecting layer.
It is an object of the present invention to provide the flip-chip of a light emitting diode and its manufacturing methods, wherein described
Insulating layer is light-transmitting insulating layer, thus Distributed Bragg Reflection layer described in the even described insulator separation and the upside-down mounting
The reflecting properties of the step of chip, the Distributed Bragg Reflection layer will not be affected.
It is an object of the present invention to provide the flip-chip of a light emitting diode and its manufacturing methods, wherein being formed
The material of the insulating layer is close with the material for forming the Distributed Bragg Reflection layer, to guarantee the distributed cloth
Caking property between glug reflecting layer and the insulating layer, and then guarantee the reliability of the flip-chip.
It is an object of the present invention to provide the flip-chip of a light emitting diode and its manufacturing methods, wherein described
Distributed Bragg Reflection layer provides at least a pair of of film layer, wherein the pair of film layer includes one first film layer and is laminated in institute
One second film layer of the first film layer is stated, first film layer and second film layer have different refractive index.
One aspect under this invention, the present invention provide the flip-chip of a light emitting diode comprising：
One transparent substrate；
One extension unit, wherein the extension unit includes a N-type layer, an active area and a P-type layer, wherein described
Substrate, the N-type layer, the active area and the P-type layer stack gradually, wherein the extension unit has an at least N-type layer
Exposed portion, the exposed portion of N-type layer extend to the N-type layer through the active area from the P-type layer；
An at least reflecting layer, wherein the reflecting layer is grown on the P-type layer of the extension unit；
One transparent insulating layer, wherein the P-type layer of the transparent insulating layer growth in the extension unit, institute
It states active area and the N-type layer and is grown on the reflecting layer；
One Distributed Bragg Reflection layer, wherein the Distributed Bragg Reflection layer is grown on the insulating layer；And
One electrode unit, wherein the electrode unit includes an at least N-type electrode and an at least P-type electrode, wherein described
N-type electrode is electrically connected to the N-type layer of the extension unit, and the P-type electrode is electrically connected to the extension unit
The P-type layer.
According to one embodiment of present invention, the flip-chip further comprises an at least current extending, wherein institute
It states current extending and is grown on the N-type layer, and the current extending is electrically connected to the N type layer, wherein described exhausted
Edge layer is grown on the current extending, wherein the N-type electrode of the electrode unit is electrically connected to the current expansion
Layer.
According to one embodiment of present invention, the flip-chip further has an at least N-type layer channel and at least one
P-type layer channel, wherein the N-type layer channel extends to the N-type through the insulating layer from the Distributed Bragg Reflection layer
Layer, the N-type electrode needle of the N-type electrode is electrically connected to the N-type layer after penetrating the N-type layer channel, wherein the P
Type layer channel extends to the P-type layer, the p-type of the P-type electrode through the insulating layer from the Distributed Bragg Reflection layer
Electrode needle is electrically connected to the P-type layer after penetrating the P-type layer channel.
According to one embodiment of present invention, the flip-chip further has an at least N-type layer channel and at least one
P-type layer channel, wherein the N-type layer channel extends to the electricity through the insulating layer from the Distributed Bragg Reflection layer
Extension layer is flowed, the N-type electrode needle of the N-type electrode is electrically connected to the current expansion after penetrating the N-type layer channel
Layer, wherein the P-type layer channel extends to the P-type layer through the insulating layer from the Distributed Bragg Reflection layer, it is described
The P-type electrode needle of P-type electrode is electrically connected to the P-type layer after penetrating the P-type layer channel.
According to one embodiment of present invention, the Distributed Bragg Reflection layer includes at least a pair of of film layer, wherein institute
Stating a pair of of film layer includes one first film layer for being grown on the insulating layer and one second film layer for being grown on first film layer,
Wherein first film layer and second film layer have different refractive index.
According to one embodiment of present invention, the refractive index of first film layer is greater than the refractive index of second film layer.
According to one embodiment of present invention, the refractive index of second film layer is greater than the refractive index of first film layer.
According to one embodiment of present invention, the Distributed Bragg Reflection layer includes 5-40 to the film layer.
According to one embodiment of present invention, the material of the insulating layer is selected from：Silica, silicon nitride, silicon oxynitride,
The material group of aluminium oxide composition, wherein the material of the Distributed Bragg Reflection layer is silica or titanium oxide or silica
With the combination of titanium oxide.
According to one embodiment of present invention, the thickness range of the insulating layer is 500 angstroms -20000 angstroms.
Other side under this invention, the present invention further provides the manufacturers of the flip-chip of a light emitting diode
Method, wherein the manufacturing method includes the following steps：
(a) one N-type layer of growth is in a transparent substrate；
(b) one active area of growth is in the N-type layer；
(c) one P-type layer of growth is in the active area；
(d) the exposed portion of an at least N-type layer for extending to the N-type layer through the active area from the P-type layer is formed；
(e) a growth at least reflecting layer is in the P-type layer；
(f) one transparent insulating layer of growth is in the reflecting layer, the P-type layer, the active area and the N type layer；
(g) one Distributed Bragg Reflection layer of growth is in the insulating layer；And
(h) one N-type electrode of electrical connection in the N-type layer and is electrically connected a P-type electrode in the P-type layer, to be made described
Flip-chip.
It according to one embodiment of present invention, further comprise step before the step (f)：At least one electricity of growth
Extension layer is flowed in the N-type layer, wherein the current extending is electrically connected to the N-type layer, thus in the step (f)
In, for the insulating layer growth in the current extending, and in the step (h), the N-type electrode is electrically connected to institute
State current extending.
According to one embodiment of present invention, it before the step (h), is formed from the Distributed Bragg Reflection
Layer extends to an at least N-type layer channel for the N-type layer through the insulating layer and is formed from the Distributed Bragg Reflection layer
An at least P-type layer channel for the P-type layer is extended to through the insulating layer, thus in the step (h), the N-type electrode
N-type electrode needle the P-type electrode needle of the N-type layer and the P-type electrode is electrically connected to after penetrating the N-type layer channel
The P-type layer is electrically connected to after penetrating the p-type into channel.
It according to one embodiment of present invention, further comprise step in the step (f)：It is passed through silane and an oxygen
Change phenodiazine in a depositing device, by by the silane and nitrous oxide in the depositing device by deposition in a manner of
The insulating layer is grown in the reflecting layer, the P-type layer, the active area and the N type layer.
According to one embodiment of present invention, the range for being passed into the flow of the silane of the depositing device is
500sccm-900sccm, the range of the flow of nitrous oxide are 800sccm-2000sccm, wherein the depositing device
The range of depositing temperature is 100 DEG C -299 DEG C, wherein the range of the deposition pressure of the depositing device is 10mTorr-
1000mTorr。
According to one embodiment of present invention, in the step (g), there is difference in the insulating layer cycling deposition
One first film layer and one second film layer of refractive index, to grow the Distributed Bragg Reflection layer in the insulating layer, wherein
First film layer and second film layer form a pair of of film layer.
According to one embodiment of present invention, the Distributed Bragg Reflection layer includes 5-40 to film layer.
Other side under this invention, the present invention further provides the manufacturers of the flip-chip of a light emitting diode
Method, wherein the manufacturing method includes the following steps：
(A) semi-finished product of a flip-chip are provided, wherein the semi-finished product of the flip-chip have multiple steps；
(B) it is grown in such a way that a transparent insulating layer covers these described steps of the semi-finished product of the flip-chip
The insulating layer is in the semi-finished product of the flip-chip；
(C) one Distributed Bragg Reflection layer of growth is in the insulating layer；And
(D) N-type electrode and a P-type electrode are electrically connected in the different layers of the semi-finished product of the flip-chip, with system
Obtain the flip-chip.
According to one embodiment of present invention, in the step (C), further comprise：It recycles and gives birth in the insulating layer
Length has one first film layer and one second film layer of different refractivity, wherein these described first film layers and second film layer
Form the Distributed Bragg Reflection layer.
It according to one embodiment of present invention, further comprise step before the step (D)：
Form the semi-finished product for extending to the flip-chip through the insulating layer from the Distributed Bragg Reflection layer
An at least N-type layer channel for one N-type layer；
Form the semi-finished product for extending to the flip-chip through the insulating layer from the Distributed Bragg Reflection layer
An at least P-type layer channel for one P-type layer；
To which in the step (D), the N-type electrode needle of the N-type electrode is to be formed in the side in the N type layer channel
Formula is electrically connected to the P-type electrode needle of the N-type layer and the P-type electrode quilt in a manner of being formed in the P-type layer channel
It is electrically connected to the P-type layer.
Detailed description of the invention
Fig. 1 is one of manufacturing process of flip-chip of a light emitting diode of a preferred embodiment under this invention
Schematic cross-sectional view.
Fig. 2 is the two section view signal of the manufacturing process of the flip-chip of above-mentioned preferred embodiment under this invention
Figure.
Fig. 3 is the three section view signal of the manufacturing process of the flip-chip of above-mentioned preferred embodiment under this invention
Figure.
Fig. 4 is the four section view signal of the manufacturing process of the flip-chip of above-mentioned preferred embodiment under this invention
Figure.
Fig. 5 is four or the five section views signal of the manufacturing process of the flip-chip of above-mentioned preferred embodiment under this invention
Figure.
Six schematic cross-sectional view of the manufacturing process of the flip-chip of Fig. 6 above-mentioned preferred embodiment under this invention.
Seven schematic cross-sectional view of the manufacturing process of the flip-chip of Fig. 7 above-mentioned preferred embodiment under this invention.
Eight schematic cross-sectional view of the manufacturing process of the flip-chip of Fig. 8 above-mentioned preferred embodiment under this invention.
Nine schematic cross-sectional view of the manufacturing process of the flip-chip of Fig. 9 above-mentioned preferred embodiment under this invention,
Wherein attached drawing 9 shows the internal structure of the flip-chip.
Specific embodiment
It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.In being described below
Preferred embodiment is only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.Boundary in the following description
Fixed basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and not have
There is the other technologies scheme away from the spirit and scope of the present invention.
It will be understood by those skilled in the art that in exposure of the invention, term " longitudinal direction ", " transverse direction ", "upper",
The orientation or position of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside"
Relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, rather than
The device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, therefore above-mentioned
Term is not considered as limiting the invention.
It is understood that term " one " is interpreted as " at least one " or " one or more ", i.e., in one embodiment
In, the quantity of an element can be one, and in a further embodiment, the quantity of the element can be multiple, term
" one " should not be understood as the limitation to quantity.
With reference to Figure of description of the invention attached drawing 1 to Fig. 9, the one of a preferred embodiment under this invention shines two
The flip-chip of pole pipe is disclosed for and is set forth in following description, wherein of the invention with elaboration in order to facilitate understanding
The flip-chip of the light emitting diode is referred to as a flip-chip, but ability in following description by content and feature
It is that field technique personnel should understand that but, the flip-chip of the light emitting diode is referred to as to the purpose of the flip-chip
Merely to keeping specification of the invention more succinct and being easy to understand, so that the present invention in following description will be described
The flip-chip of light emitting diode, which is referred to as the flip-chip, should not be considered as limit to the contents of the present invention and range
System.Specifically, the flip-chip of the invention includes a substrate 10, an extension unit 20, at least a reflecting layer 30, one
Insulating layer 40, a Distributed Bragg Reflection layer 50 and an electrode unit 60.
The extension unit 20 further comprises 21, one active area 22 of a N-type layer (N-type conductive layer) and a P-type layer (P
Type conductive layer) 23, wherein the N-type layer 21 is grown on the substrate 10, so that the N-type layer 21 is laminated in the substrate 10,
Wherein the active area 22 is grown on the N-type layer 21, so that the active area 22 is laminated in the N-type layer 21, wherein described
P-type layer 23 is grown on the active area 22, so that the P-type layer 23 is laminated in the active area 22.That is, the lining
Bottom 10, the N type layer 21, the active area 22 and the P-type layer 23 stack gradually.
The extension unit 20 further has the exposed portion 24 of a N-type layer, wherein the exposed portion 24 of the N-type layer is from the P
Type layer 23 extends to the N-type layer 21 through the active area 22, so that a part of the N-type layer 21 is exposed on the N-type
The exposed portion 24 of layer.That is, the N-type layer 21 and the P-type layer 23 all have in the same side of the extension unit 20
Exposure.The exposed portion 24 of N-type layer makes the flip-chip have step.Specifically, the exposed portion 24 of N-type layer
Being formed such that between the exposure of the P-type layer 23 and the exposure of the N-type layer 21 has difference in height, so that institute
Flip-chip is stated with step.
Preferably, the N-type layer 21 forms a part in the exposed portion 24 of the N-type layer, that is, the N type layer 21 is in correspondence
Thickness in the region in the exposed portion 24 of the N-type layer is less than the N-type layer 21 in the region for corresponding to the active area 22
Thickness.That is, the exposed portion 24 of N-type layer extends from the exposure of the P-type layer 23 through the active area 22
To the middle part of the N-type layer 21, to form the exposure of the N-type layer 21, and the exposure of the N-type layer 21 is sudden and violent
It is exposed at the exposed portion 24 of the N-type layer, to make the N-type layer 21 in the thickness in the region for corresponding to the exposed portion 24 of the N-type layer
Size is less than the N-type layer 21 in the thickness in the region for corresponding to the active area 22.
The reflecting layer 30 is grown on the P-type layer 23 of the extension unit 20, so that the reflecting layer 30 is laminated in
The P-type layer 23 of the extension unit 20.With reference to attached drawing 9, the reflecting layer 30 does not cover the institute of the extension unit 20
The whole region of the exposure of P-type layer 23 is stated, so that the exposure of the upper surface in the reflecting layer 30 and the P-type layer 23
There is difference in height, so that the flip-chip has step between face.
The insulating layer 40 is grown on the P-type layer 23, the active area 22 and the N-type of the extension unit 20
The layer 21 and reflecting layer 30 so that the insulating layer 40 can be incorporated into the extension unit 20 the P-type layer 23,
The active area 22 and the N-type layer 21 and it is incorporated into the reflecting layer 30, in this way, the insulating layer 40
The step of the flip-chip can be covered.Preferably, the insulating layer 50 is light-transmitting insulating layer.
The Distributed Bragg Reflection layer 50 is grown on the insulating layer 40, so that the distributed Bragg is anti-
Penetrate layer 50 and be laminated in the insulating layer 40 so that the insulating layer 40 be isolated the Distributed Bragg Reflection layer 50 with
The extension unit 20 and the isolation Distributed Bragg Reflection layer 50 and the reflecting layer 30.Because of the insulating layer 40
The step of the flip-chip is covered, so that the Distributed Bragg Reflection layer 50 can be with the distributed Bradley
Lattice reflecting layer 50 is covered the step of the flip-chip by the mode that the insulating layer 40 is isolated, in this way, described
The step coverage of Distributed Bragg Reflection layer 50 is significantly increased, and occurs leaking electricity to avoid the flip-chip
Bad phenomenon, to guarantee the reliability of the flip-chip and improve the product yield of the flip-chip.That is,
These steps of the flip-chip can be covered by secondary insulating, so as to avoid the flip-chip in these step positions
The bad phenomenon for occurring leaking electricity is set, and then the product of the reliability of the guarantee flip-chip and the raising flip-chip is good
Rate.
The electrode unit 60 further comprises an at least N-type electrode 61 and an at least P-type electrode 62, wherein the N-type
Electrode 61 is electrically connected to the N-type layer 21 of the extension unit 20, and the P-type electrode 62 is electrically connected to the extension
The P-type layer 23 of unit 20.
Further, the flip-chip has an at least N-type layer channel 100 and an at least P-type layer channel 200.It is described
N-type layer channel 100 extends to the institute of the extension unit 20 from the Distributed Bragg Reflection layer 50 through the insulating layer 40
N-type layer 21 is stated, the N-type electrode 61 has a N-type electrode needle 611, wherein the N-type electrode needle of the N-type electrode 61
611 extend to and are electrically connected to the N-type layer 21 of the extension unit 20 through the N-type layer channel 100, that is, the N
The N-type electrode needle 611 of type electrode 61 is electrically connected to the N-type layer 21 after penetrating the N-type layer channel 100.Accordingly
Ground, the P-type layer channel 200 extend to the extension list through the insulating layer 40 from the Distributed Bragg Reflection layer 50
The P-type layer 23 of member 20, the P-type electrode 62 has a P-type electrode needle 621, wherein the P of the p-type with the age 62
Type electrode needle 621 extends to and is electrically connected to the P-type layer 23 of the extension unit 20 through the P-type layer channel 200,
That is, the P-type electrode needle 621 of the P-type electrode 62 is electrically connected to the p-type after penetrating the P-type layer channel 200
Layer 23.
Specifically, the N-type electrode 61 is formed in the Distributed Bragg Reflection layer 50, and the N type electrode 61
The N-type electrode needle 611 extend to and be electrically connected to the N of the extension unit 20 through the N-type layer channel 100
Type layer 21.Correspondingly, the P-type electrode 62 is formed in the Distributed Bragg Reflection layer 50, and the P-type electrode 62
The P-type electrode needle 621 extends to and is electrically connected to the p-type of the extension unit 20 through the P-type layer channel 200
Layer 23.
Further, with reference to attached drawing 9, the flip-chip includes an at least current extending 70, wherein the electric current expands
Exhibition layer 70 is grown on the exposure of the N-type layer 21 of the extension unit 20, so that the current extending 70 is laminated in institute
The exposure of the N-type layer 21 of extension unit 20 is stated, and the current extending 70 is electrically connected to the N-type layer 21.?
That is the current extending 70 is maintained at the exposed portion 24 of the N-type layer, and the current extending 70 with it is described
Active area 22 and the P-type layer 23 all have safe distance, and this structure forms the step of the flip-chip.The insulation
Layer 40 is grown on the current extending 70, so that the insulating layer 40 is laminated in the current extending 70.The upside-down mounting core
The N-type layer channel 100 of piece extends to the electric current through the insulating layer 40 from the Distributed Bragg Reflection layer 50
Extension layer 70, wherein the N-type electrode 61 is formed in the Distributed Bragg Reflection layer 50, and the institute of the N-type electrode 61
It states N-type electrode needle 611 and extends to and be electrically connected to the current extending 70 through the N-type layer channel 100.
When the N-type electrode 61 of excitation current from the electrode unit 60 of the flip-chip expands through the electric current
Exhibition layer 70 acts on the N-type layer 21 of the extension unit 20 and acts on the extension unit 20 from the P-type electrode 62
The P-type layer 23 when, the active area 22 can generate light, and a part of light energy that the active area 22 generates
Enough directly outwardly to radiate via the substrate 10, another part light that the active area 22 generates can be through the reflection
Layer 20 and pass through the insulating layer 40 after by the reflection of the Distributed Bragg Reflection layer 50.And again pass through the lining
Bottom 10 outwardly radiates, so that the flip-chip of the invention is by providing the side of the Distributed Bragg Reflection layer 50
Formula can increase the area of the reflecting surface of the Distributed Bragg Reflection layer 50 and the formation of the reflecting layer 30, thus substantially
The area that the P-type layer 23 for the extension unit 20 that degree ground increases the flip-chip is not covered by the reflecting layer 30
The reflectivity in domain, and then improve the brightness of the light emitting diode.
That is, the substrate 10 is transparent substrates in the flip-chip of the invention, to have described in permission
Source region 22, which is checked and accepted, returns your light and can outwardly radiate through the substrate 10.For example, the substrate 10 can be but not
It is limited to Sapphire Substrate.Preferably, the N-type layer 21 of the extension unit 20 can be but not limited to n type gallium nitride layer,
The P-type layer 23 can be but not limited to p-type gallium nitride layer.
Further, the attached drawing 1 of Figure of description of the invention shows the manufacturing process of the flip-chip to Fig. 9.
In the attached stage shown in fig. 1, the transparent substrate 10 is provided, to allow the flip-chip to generate subsequent
Light pass through after the substrate 10 to external radiation.It is noted that the material of the substrate 10 is fallen described in of the invention
It is unrestricted in cartridge chip, as long as being capable of light transmission.For example, one in the flip-chip of the invention is specifically shown
In example, the substrate 10 of the flip-chip can be but not limited to Sapphire Substrate.
It is attached Fig. 2 shows stage, successively grown on the substrate 10 the extension unit 20 the N type layer 21,
The active area 22 and the P-type layer 23, so that the substrate 10, the N-type layer 21, the active area 22 and the P
Type layer 23 stacks gradually.For example, can use but be not limited in a preferable examples of the flip-chip of the invention
Metallo-organic compound chemical gaseous phase deposition equipment (Metal-Organic Chemical Vapor Deposition,
MOCVD the N-type layer 21 successively) is grown from the substrate 10, the active area 22 is grown from the N-type layer 21 and described in
Active area 22 grows the P-type layer 23, so that the substrate 10, the N-type layer 21, the active area 22 and the P
Type layer 23 stacks gradually.
In the stage shown in attached drawing 3, the exposed portion 24 of the N-type layer is formed on the extension unit 20, so that the N
The exposed portion 24 of type layer extends to the N-type layer 21 through the active area 22 from the exposure of the P-type layer 23, so that institute
N-type layer 21 is stated with exposure.It is understood that the exposure of the N-type layer 21 is exposed to the institute of the extension unit 20
State the exposed portion 24 of N-type layer.Have the N-type layer of exposure exposed for the N-type layer 21 because the extension unit 20 is formed
Portion 24, so that the flip-chip has step.
It is noted that forming the mode in the exposed portion 24 of the N-type layer on the extension unit 20 of the invention
It is unrestricted in the flip-chip.For example, can pass through in a preferable examples of the flip-chip of the invention
Etch process forms the exposed portion 24 of the N-type layer in the extension unit 20.Specifically, using positive photoresist photoresist pair first
The extension unit 20 carries out photoetching, so that the region that the needs of the extension unit 20 are etched is exposed.Using positive photoresist light
Photoresist to the extension unit 20 carry out photoetching when, set photoresist with a thickness of 3 μm -5 μm (including 3 μm and 5 μm).It is preferred that
Ground can toast the extension unit 20 after carrying out photoetching to the extension unit 20 using positive photoresist photoresist.
Then, dry etching is carried out to the region that the needs of the extension unit 20 are etched, for example, can use but be not limited to electricity
Feeling coupled plasma board, ((Inductive Coupled Plasma Emission Spectrometer, ICP) is to institute
State the region progress dry etching that the needs of extension unit 20 are etched.When carrying out dry etching to the extension unit 20
Using to gas can be chlorine (Cl2), boron chloride (BCl3), argon gas (Ar).Dry method is carried out to the extension unit 20
The etch depth of etching can be 0.9 μm -2 μm (including 0.9 μm and 2 μm), to obtain the P from the extension unit 20
The exposed portion 24 of the N-type layer that the exposure of type layer 23 extends to the N-type layer 21 through the active area 22.
It's also worth mentioning that the extension depth in the exposed portion 24 of the N-type layer of the extension unit 20 is of the invention
It is unrestricted in the flip-chip, make the N-type layer 21 that there is exposure as long as the N-type layer 21 can be exposed.
It is formed in the extension unit 20 from described in the P-type layer 23 warp to the extension unit 20 completion etching
Active area 22 extends to after the exposed portion 24 of the N-type layer of the N-type layer 21, removes the surface of the extension unit 20
Remaining photoresist, to obtain the semi-finished product of the flip-chip shown in attached drawing 3.
With reference to attached drawing 4, the reflecting layer 30 is grown in the exposure of the P-type layer 23 of the extension unit 20, so that
The reflecting layer 30 is laminated in the P-type layer 23 of the extension unit 20.Preferably, the reflecting layer 20 is argentum reflecting layer,
To improve the reflectivity in the reflecting layer 20, to guarantee the brightness of the light emitting diode.Specifically, first described
The exposure of the P-type layer 23 of extension unit 20 determines the region for needing to be laminated the reflecting layer 30, then in the region shape
At the reflecting layer 30, so that the reflecting layer 30 is laminated in the P-type layer 23 of the extension unit 20.Preferably,
It, can be with after the exposure of the P-type layer 23 of the extension unit 20 determines and needs to be laminated the region in the reflecting layer 30
The reflecting layer 30 is formed in the region in the way of precipitating, so that the reflecting layer 30 is laminated in the extension unit 20
The P-type layer 23 exposure.With reference to attached drawing 4, the reflecting layer 30 does not cover the p-type of the extension unit 20
The whole region of the exposure of layer 23, so that the flip-chip has step.
More specifically, negtive photoresist can be used and make what needs deposited by lithography in the P-type layer 23 of the extension unit 20
The figure in reflecting layer, then the figure using the mode of vapor deposition or sputter coating in the reflecting layer made by lithography deposits described
Reflecting layer 30, at this point, the reflecting layer 30 is formed in the exposure of the P type layer 23 of the extension unit 20.For example,
In the more specific example of one of the flip-chip of the invention, negtive photoresist can be used in the P of the extension unit 20
Type layer 23 makes the figure for needing the Mirror structure deposited by lithography, then using the mode of vapor deposition or sputter coating described
The exposure of the P-type layer 23 of extension unit 20 deposits a Mirror layers.That is, in the upside-down mounting of the invention
In the specific example of one of chip, it is formed in the reflecting layer of the exposure of the P-type layer 23 of the extension unit 20
30 can be formed in the Mirror layers of the exposure of the P-type layer 23 of the extension unit 20.
Preferably, the reflecting layer 30 uses the stepped construction of silver (Ag) and titanium tungsten (TiW), wherein the thickness of silver-colored (Ag)
Having a size of 100 angstroms -5000 angstroms (including 100 angstroms and 5000 angstroms), the thickness of titanium tungsten (TiW) be 200 angstroms -5000 angstroms (including
200 angstroms and 5000 angstroms).
When making the figure in reflecting layer for needing to deposit by lithography in the P-type layer 23 of the extension unit 20 using negtive photoresist,
It, can be with after using the figure of vapor deposition or sputter coating process in the reflecting layer made by lithography to deposit the reflecting layer 30
The semi-finished product of the flip-chip are further processed.For example, peeling off extra metal layer first, then remove again described
The photoresist remained on surface of the semi-finished product of flip-chip.In the flip-chip of the invention, the upside-down mounting core is peeled off
The mode of the extra metal layer of the semi-finished product of piece is unrestricted, such as can peel off the upside-down mounting core using blue membrane process
The photoresist remained on surface of the semi-finished product of piece.
With reference to attached drawing 5, the current extending 70 is grown in the exposure of the N-type layer 21 of the extension unit 20,
So that the current extending 70 is laminated in the exposure of the N-type layer 21, and the current extending 70 is electrically connected to
The N-type layer 21.It is noted that the material of the current extending 70 in the flip-chip of the invention not by
Limitation, such as the current extending 70 can be but not limited to current expansion metal layer.Because being grown on the N-type layer 21
The current extending 70 of exposure be maintained at the exposed portion 24 of the N-type layer, and the current extending 70 and institute
It states and is respectively provided with safe distance between active area 22 and the P-type layer 23, so that the flip-chip has step.
Specifically, negtive photoresist, which can be used, makes the electricity for needing to deposit by lithography in the N-type layer 21 of the extension unit 20
The figure of extension layer is flowed, then the figure using the mode of vapor deposition or sputter coating in the current extending made by lithography deposits
The current extending 70 out, wherein there is safe distance between the peripheral wall of the current extending 70 and the active area 22,
And safe distance between the peripheral wall and the P-type layer 23 of the current extending 70, to avoid the current extending 70 contact
The active area 22 and the current extending 70 is avoided to contact the P-type layer 23.For example, in the upside-down mounting core of the invention
In the more specific example of one of piece, negtive photoresist can be used, and in the N-type layer 21 of the extension unit 20 to make needs by lithography heavy
Then the figure of long-pending current extending is deposited in the N-type layer 21 using the mode of vapor deposition or sputter coating and is kept
The current extending 70 in the exposed portion 24 of the N-type layer.Preferably, the structure of the current extending 70 is chromium
(Cr), aluminium (Al), titanium (Ti) platinum (Pt) gold (Au), nickel (Ni) electrode structure.That is, forming the current extending 70
Material be selected from：The material group of chromium (Cr), aluminium (Al), titanium (Ti) platinum (Pt) golden (Au), nickel (Ni) composition.Specifically, described
The material of current extending 70 can choose one of chromium (Cr), aluminium (Al), titanium (Ti) platinum (Pt) golden (Au), nickel (Ni) material
Material also can choose chromium (Cr), aluminium (Al), titanium (Ti) platinum (Pt) golden (Au), the two or more materials in nickel (Ni).
When making the current extending for needing to deposit by lithography in the N-type layer 21 of the extension unit 20 using negtive photoresist
Figure, and the current expansion is deposited in the figure of the current extending made by lithography using vapor deposition or sputter coating process
After layer 70, the semi-finished product of the flip-chip can be further processed.For example, peeling off extra metal layer first, so
Remove the photoresist remained on surface of the semi-finished product of the flip-chip again afterwards.In the flip-chip of the invention, removing
The mode for falling the extra metal layer of the semi-finished product of the flip-chip is unrestricted, such as can be using blue membrane process removing
Fall the photoresist remained on surface of the semi-finished product of the flip-chip.
Because being maintained at the exposed portion of the N-type layer in the exposure growth of the N-type layer 21 of the extension unit 20
24 current extending 70, so that the flip-chip has step.
With reference to attached drawing 6, the insulating layer 40 is grown on the semi-finished product of the flip-chip, so that the insulating layer 40
Cover these steps of the flip-chip.Specifically, the extension unit 20 the N type layer 21 exposure and
Exposure, the reflecting layer 30 and the current extending 70 of the P-type layer 22 grow the insulating layer 40 respectively, with
These steps of the flip-chip are covered by the insulating layer 40.
Specifically, can use a plasma enhanced chemical vapor deposition equipment (Plasma Enhanced
Chemical Vapor Deposition, PECVD) the extension unit 20 the N-type layer 21 exposure and the P
The exposure of type layer 22, the reflecting layer 30 and the current extending 70 grow the insulating layer 40 respectively.The insulation
The material of layer 40 is unrestricted in the flip-chip of the invention, such as the insulating layer 40 can be but not limited to
SiO2。
More specifically, silane (SiH4) and nitrous oxide (N2O) are passed through the plasma enhanced chemical vapor
Depositing device, wherein the flow of silane is 500sccm-900sccm (including 500sccm and 900sccm), wherein an oxidation two
The flow of nitrogen is 800sccm-2000sccm (including 800sccm and 2000sccm), and wherein precipitation temperature is 100 DEG C -299 DEG C
(including 100 DEG C and 299 DEG C), deposition pressure is 10mTorr-1000mTorr (including 10mTorr and 1000mTorr), upper
State it is such under the conditions of, silane and nitrous oxide being capable of exposure in the N-type layer 21 of the extension unit 20 and institutes
Exposure, the reflecting layer 30 and the current extending 70 for stating P type layer 22 grow the insulating layer 40, by institute
State these steps that insulating layer 40 covers the flip-chip.
The thickness of the insulating layer 40 is unrestricted in the flip-chip of the invention, such as in institute of the invention
It states in a preferable examples of flip-chip, the thickness range of the insulating layer 40 can be 500 angstroms -2000 angstroms (including 500
Angstrom and 2000 angstroms).
With reference to attached drawing 7, the Distributed Bragg Reflection layer 50 is grown in the insulating layer 40, so that the distribution
Formula Bragg reflecting layer 50 is laminated in the insulating layer 40, so that the distributed Bragg is isolated in the insulating layer 40
Reflecting layer 50 and the extension unit 20 and the Distributed Bragg Reflection layer 50 and the reflecting layer 30 is isolated.Because institute
These steps that insulating layer 40 covers the flip-chip are stated, so that the Distributed Bragg Reflection layer 50 can be with
The Distributed Bragg Reflection layer 50 is covered these steps of the flip-chip by the mode that the insulating layer 40 is isolated,
In this way, the step coverage of the Distributed Bragg Reflection layer 50 is significantly increased, to avoid described
There is the bad phenomenon leaked electricity in flip-chip, to guarantee the reliability of the flip-chip and improve the flip-chip
Product yield.
In a preferable examples of the flip-chip of the invention, vapor deposition mode can be used in the insulating layer
The 40 growth Distributed Bragg Reflection layers 50, so that the Distributed Bragg Reflection layer 50 is laminated in the insulating layer
40.Preferably, the Distributed Bragg Reflection layer 50 is using the stepped construction using silica, titanium oxide, described in improving
The reflectivity of Distributed Bragg Reflection layer 50, to be conducive to improve the overall brightness of the light emitting diode.Specifically
It says, the Distributed Bragg Reflection layer 50 includes at least a pair of of film layer 51, wherein the pair of film layer 51 includes being grown on institute
It states one first film layer 51a of insulating layer 40 and is grown on the one second film layer 51b of the first film layer 51a, wherein described first
Film layer 51a and the second film layer 51b has different refractive index.For example, one of the flip-chip of the invention compared with
In good example, the refractive index of the first film layer 51a of the Distributed Bragg Reflection layer 50 is greater than second film layer
The refractive index of 51b.And in another preferable examples of the flip-chip of the invention, the Distributed Bragg Reflection
The refractive index of the first film layer 51a of layer 50 is less than the refractive index of the second film layer 51b.It is noted that for institute
The different wave length for stating flip-chip can be designed that the film layer of different pairs, such as the one of the flip-chip of the invention
In a specific example, the logarithm of the film layer of the Distributed Bragg Reflection layer 50 can be but not limited to 5 p- 40 to (including
5 pairs and 40 pairs).
Because the material of the Distributed Bragg Reflection layer 50 is adjacent with the material of the insulating layer 40, to guarantee
Caking property between the Distributed Bragg Reflection layer 50 and the insulating layer 40, so guarantee the flip-chip can
By property and stability.
In addition, because the reflecting layer 30 of the P-type layer 23 that is laminated in the extension unit 20 can not cover it is described
The whole region of the exposure of P-type layer 23, this makes at least part even cotton of the P-type layer 23 be that cannot reflect institute
State the light of the generation of active area 22.In the flip-chip of the invention, the P-type layer 23 not by the reflection
The regions of 30 covering of layer are further covered by the Distributed Bragg Reflection layer 50, to increase the reflecting layer 30 and described
The area for the reflecting surface that Distributed Bragg Reflection layer 50 is formed, this mode can be improved the reflectivity of the flip-chip,
This is very important for the overall brightness of the light emitting diode is significantly increased.
With reference to attached drawing 8, the N-type layer channel 100 and the P-type layer channel 200 of the flip-chip are formed, wherein
The N-type layer channel 100 extends to the current extending through the insulating layer 40 from the Distributed Bragg Reflection layer 50
70, the P-type layer channel 200 extends to the P-type layer through the insulating layer 40 from the Distributed Bragg Reflection layer 50
23。
Specifically, using positive photoresist photoresist pair first in a preferable examples of the flip-chip of the invention
The Distributed Bragg Reflection layer 50 carries out photoetching, so that the needs of the Distributed Bragg Reflection layer 50 were etched
Region is exposed.Then, the Distributed Bragg Reflection layer 50 and the insulating layer 40 are etched using ICP board, with
It is respectively formed the p-type corresponding to the N-type layer channel 100 of the current extending 70 and corresponding to the P-type layer 23
Layer channel 200.
With reference to attached drawing 9, the N is respectively formed in the different zones of the lateral surface of the Distributed Bragg Reflection layer 50
Type electrode 61 and the P-type electrode 62, wherein the N-type electrode needle 611 of the N-type electrode 61 is through the N-type layer channel
100 extend to and are electrically connected to the current extending 70, the p-type of the P-type electrode 62 of the P-type electrode 72
Electrode needle 621 extends to and is electrically connected to the P-type layer 23 through the P-type layer channel 200, the flip-chip is made.
Specifically, in a specific example of the flip-chip of the invention, it can be by the distribution
The lateral surface of formula Bragg reflecting layer 50 carries out negative-working photoresist and the mode of removing forms the N-type electrode 61 and p-type electricity
Pole 62.More specifically, negtive photoresist can be used and made by lithography in the lateral surface of the Distributed Bragg Reflection layer 50 and need to deposit
Electrode figure, then deposit the N-type in the figure of the electrode made by lithography using vapor deposition or the mode of sputter coating
Electrode 61 and the P-type electrode 62, wherein the N-type electrode needle 611 of the N type electrode 61 is through the N-type layer channel 100
The current extending 70 is extended to and is electrically connected to, correspondingly, the P-type electrode needle 621 of the P-type electrode 62 passes through
The P-type layer channel 200 extends to and is electrically connected to the P-type layer 23.When use negtive photoresist is in the distributed Bragg
The lateral surface in reflecting layer 50 makes the figure for needing the electrode deposited by lithography, and using the technique of vapor deposition or sputter coating in light
It, can be to the flip-chip after the figure of the electrode carved deposits the N-type electrode 61 and the P-type electrode 62
Semi-finished product are further processed, to obtain the flip-chip.For example, peeling off extra metal layer first, then go again
Except the photoresist remained on surface of the semi-finished product of the flip-chip.In the flip-chip of the invention, peel off described
The mode of the extra metal layer of the semi-finished product of flip-chip is unrestricted, such as can be peeled off using blue membrane process described
The photoresist remained on surface of the semi-finished product of flip-chip, to obtain the flip-chip.
Preferably, the structure of the N-type electrode 61 and the P-type electrode 62 is chromium (Cr), aluminium (Al), titanium (Ti), platinum
(Pt), golden (Au), nickel (Ni), golden tin (AuSn) electrode structure.That is, the N-type electrode 60 and the P-type electrode 70
The material of electrode structure be selected from：Chromium (Cr), aluminium (Al), titanium (Ti), platinum (Pt), golden (Au), tin (Sn), nickel (Ni), golden tin
(AuSn) the material group formed.Specifically, the material of the electrode structure of the N-type electrode 60 and the P-type electrode 70 can
To select one of chromium (Cr), aluminium (Al), titanium (Ti), platinum (Pt), golden (Au), tin (Sn), nickel (Ni), golden tin (AuSn) material
Material, also can choose chromium (Cr), aluminium (Al), titanium (Ti), platinum (Pt), golden (Au), tin (Sn), nickel (Ni), in golden tin (AuSn)
Two or more materials.The thickness of the N-type electrode 61 and the thickness range of the P-type electrode 62 are 0 μm of -7 μ
M (including 7 μm).
One aspect under this invention, the present invention provide the manufacturing method of the flip-chip of a light emitting diode, wherein institute
Manufacturing method is stated to include the following steps：
(a) one N-type layer 21 of growth is in a transparent substrate 10；
(b) one active area 22 of growth is in the N-type layer 21；
(c) one P-type layer 23 of growth is in the active area 22；
(d) it is exposed to form at least N-type layer for extending to the N-type layer 21 through the active area 22 from the P-type layer 23
Portion 24；
(e) a growth at least reflecting layer 30 is in the P-type layer 23；
(f) one transparent insulating layer 40 of growth is in the reflecting layer 30, the P-type layer 23, the active area 22 and described
N-type layer 21；
(g) one Distributed Bragg Reflection layer 50 of growth is in the insulating layer 40；And
(h) one N-type electrode 61 of electrical connection in the N-type layer 21 and one P-type electrode 62 of electrical connection in the P-type layer 23, with
The flip-chip is made.
Further, before the step (f), the manufacturing method further comprises step：Grow an at least electric current
Extension layer 70 is in the N-type layer 21, wherein the current extending 70 is electrically connected to the N type layer 21, thus in the step
Suddenly in (f), the insulating layer 40 is grown on the current extending 70, and in the step (h), 61 quilt of N-type electrode
It is electrically connected to the current extending 70.
One aspect under this invention, the present invention provide the manufacturing method of the flip-chip of a light emitting diode, wherein institute
Manufacturing method is stated to include the following steps：
(A) semi-finished product of a flip-chip are provided, wherein the semi-finished product of the flip-chip have multiple steps；
(B) raw in such a way that a transparent insulating layer 40 covers these described steps of the semi-finished product of the flip-chip
The long insulating layer 40 is in the semi-finished product of the flip-chip；
(C) one Distributed Bragg Reflection layer 50 of growth is in the insulating layer 40；And
(D) N-type electrode 61 and a P-type electrode 62 are electrically connected in the different layers of the semi-finished product of the flip-chip,
The flip-chip is made.
It is worth noting that, Figure of description of the invention attached drawing 1 to the substrate 10 shown in Fig. 9, described
N-type layer 21, the active area 22, the P-type layer 23, the reflecting layer 30, the insulating layer 40, the distributed Bragg
The exemplary only explanation of the thickness of reflecting layer 50 and the current extending 70, is not offered as the substrate 10, the N
Type layer 21, the active area 22, the P-type layer 23, the reflecting layer 30, the insulating layer 40, the distributed Bragg are anti-
Penetrate the actual thickness of layer 50 and the current extending 70.And the substrate 10, the N-type layer 21, the active area 22,
The P-type layer 23, the reflecting layer 30, the insulating layer 40, the Distributed Bragg Reflection layer 50 and the electric current expand
The actual thickness ratio between layer 70 is opened up also unlike attached drawing 1 is to illustrated in Fig. 9.In addition, 61 He of N-type electrode
The dimension scale of other layers of the size and flip-chip of the P-type electrode 62 is also not limited to attached drawing 1 into Fig. 9
Illustrated by.
It will be appreciated by those skilled in the art that above embodiments are only for example, wherein the feature of different embodiments
It can be combined with each other, be readily conceivable that with the content that is disclosed according to the present invention but do not explicitly point out in the accompanying drawings
Embodiment.
It should be understood by those skilled in the art that foregoing description and the embodiment of the present invention shown in the drawings are only used as lifting
Example and be not intended to limit the present invention.The purpose of the present invention has been fully and effectively achieved.Function and structural principle of the invention is
It shows and illustrates in embodiment, under without departing from the principle, embodiments of the present invention can have any deformation or repair
Change.
Claims (20)
1. the flip-chip of a light emitting diode, which is characterized in that including：
One transparent substrate；
One extension unit, wherein the extension unit includes a N-type layer, an active area and a P-type layer, wherein the substrate,
The N-type layer, the active area and the P-type layer stack gradually, wherein the extension unit has an at least N-type layer exposed
Portion, the exposed portion of N-type layer extend to the N-type layer through the active area from the P-type layer；
An at least reflecting layer, wherein the reflecting layer is grown on the P-type layer of the extension unit；
One transparent insulating layer, wherein the transparent insulating layer growth is in the P-type layer, described active of the extension unit
Area and the N-type layer and it is grown on the reflecting layer；
One Distributed Bragg Reflection layer, wherein the Distributed Bragg Reflection layer is grown on the insulating layer；And
One electrode unit, wherein the electrode unit includes an at least N-type electrode and an at least P-type electrode, wherein the N-type is electric
Pole is electrically connected to the N-type layer of the extension unit, and the P-type electrode is electrically connected to the P of the extension unit
Type layer.
2. flip-chip according to claim 1 further comprises an at least current extending, wherein the current expansion
Layer is grown on the N-type layer, and the current extending is electrically connected to the N-type layer, wherein the insulating layer growth in
The current extending, wherein the N-type electrode of the electrode unit is electrically connected to the current extending.
3. flip-chip according to claim 1 further has an at least N-type layer channel and an at least P-type layer channel,
Wherein the N-type layer channel extends to the N-type layer, the N-type through the insulating layer from the Distributed Bragg Reflection layer
The N-type electrode needle of electrode is electrically connected to the N-type layer after penetrating the N-type layer channel, wherein the P-type layer channel is from institute
It states Distributed Bragg Reflection layer and extends to the P-type layer through the insulating layer, the P-type electrode needle of the P-type electrode is penetrating
The P-type layer is electrically connected to behind the P-type layer channel.
4. flip-chip according to claim 3 further has an at least N-type layer channel and an at least P-type layer channel,
Wherein the N-type layer channel extends to the current extending, institute through the insulating layer from the Distributed Bragg Reflection layer
The N-type electrode needle for stating N-type electrode is electrically connected to the current extending after penetrating the N-type layer channel, wherein the p-type
Layer channel extends to the P-type layer, the p-type electricity of the P-type electrode through the insulating layer from the Distributed Bragg Reflection layer
Pole needle is electrically connected to the P-type layer after penetrating the P-type layer channel.
5. according to claim 1 to any flip-chip in 4, wherein the Distributed Bragg Reflection layer includes at least
A pair of of film layer, wherein the pair of film layer includes being grown on one first film layer of the insulating layer and being grown on first film layer
One second film layer, wherein first film layer and second film layer have different refractive index.
6. flip-chip according to claim 5, wherein the refractive index of first film layer is greater than second film layer
Refractive index.
7. flip-chip according to claim 5, wherein the refractive index of second film layer is greater than first film layer
Refractive index.
8. flip-chip according to claim 5, wherein the Distributed Bragg Reflection layer includes 5-40 to the film
Layer.
9. according to claim 1 to any flip-chip in 8, wherein the material of the insulating layer is selected from：Silica, nitrogen
The material group of SiClx, silicon oxynitride, aluminium oxide composition, wherein the material of the Distributed Bragg Reflection layer is silica or oxygen
Change the combination of titanium or silica and titanium oxide.
10. according to claim 1 to the flip-chip any in 8, wherein the thickness range of the insulating layer be 500 angstroms-
20000 angstroms.
11. the manufacturing method of the flip-chip of a light emitting diode, which is characterized in that the manufacturing method includes the following steps：
(a) one N-type layer of growth is in a transparent substrate；
(b) one active area of growth is in the N-type layer；
(c) one P-type layer of growth is in the active area；
(d) the exposed portion of an at least N-type layer for extending to the N-type layer through the active area from the P-type layer is formed；
(e) a growth at least reflecting layer is in the P-type layer；
(f) one transparent insulating layer of growth is in the reflecting layer, the P-type layer, the active area and the N-type layer；
(g) one Distributed Bragg Reflection layer of growth is in the insulating layer；And
(h) one N-type electrode of electrical connection in the N-type layer and is electrically connected a P-type electrode in the P-type layer, the upside-down mounting is made
Chip.
12. manufacturing method according to claim 11, wherein further comprising step before the step (f)：Growth
An at least current extending is in the N-type layer, wherein the current extending is electrically connected to the N-type layer, thus described
In step (f), in the current extending, and in the step (h), the N-type electrode is electrically connected the insulating layer growth
It is connected to the current extending.
13. manufacturing method according to claim 11, wherein being formed before the step (h) from the distributed cloth
Glug reflecting layer extends to an at least N-type layer channel for the N-type layer through the insulating layer and is formed from the distributed Bradley
Lattice reflecting layer extends to an at least P-type layer channel for the P-type layer through the insulating layer, thus in the step (h), it is described
The N-type electrode needle of N-type electrode is electrically connected to the p-type of the N-type layer and the P-type electrode after penetrating the N-type layer channel
Electrode needle is electrically connected to the P-type layer after penetrating the p-type into channel.
14. any manufacturing method in 1 to 13 according to claim 1, wherein further comprising in the step (f)
Step：Silane and nitrous oxide are passed through in a depositing device, to set by the silane and nitrous oxide in the deposition
The insulating layer is grown by way of deposition in the reflecting layer, the P-type layer, the active area and the N-type layer in standby.
15. manufacturing method according to claim 14, wherein being passed into the range of the flow of the silane of the depositing device
For 500sccm-900sccm, the range of the flow of nitrous oxide is 800sccm-2000sccm, wherein the depositing device
The range of depositing temperature is 100 DEG C -299 DEG C, wherein the range of the deposition pressure of the depositing device is 10mTorr-
1000mTorr。
16. any manufacturing method in 1 to 15 according to claim 1, wherein in the step (g), in the insulation
Layer cycling deposition has one first film layer and one second film layer of different refractivity, to grow the Distributed Bragg Reflection layer
In the insulating layer, wherein first film layer and second film layer form a pair of of film layer.
17. the manufacturing method according to claim 16, wherein the Distributed Bragg Reflection layer includes 5-40 to film layer.
18. the manufacturing method of the flip-chip of a light emitting diode, which is characterized in that the manufacturing method includes the following steps：
(A) semi-finished product of a flip-chip are provided, wherein the semi-finished product of the flip-chip have multiple steps；
(B) it is grown in such a way that a transparent insulating layer covers these described steps of the semi-finished product of the flip-chip described exhausted
Edge layer is in the semi-finished product of the flip-chip；
(C) one Distributed Bragg Reflection layer of growth is in the insulating layer；And
(D) N-type electrode and a P-type electrode are electrically connected in the different layers of the semi-finished product of the flip-chip, institute is made
State flip-chip.
19. manufacturing method according to claim 18, wherein further comprising in the step (C)：In the insulation
Layer cycling deposition has one first film layer and one second film layer of different refractivity, wherein these described first film layers and described the
Two film layers form the Distributed Bragg Reflection layer.
20. manufacturing method described in 8 or 19 according to claim 1, wherein further comprising step before the step (D)：
Form the N-type for extending to the semi-finished product of the flip-chip through the insulating layer from the Distributed Bragg Reflection layer
An at least N-type layer channel for layer；
Form the p-type for extending to the semi-finished product of the flip-chip through the insulating layer from the Distributed Bragg Reflection layer
An at least P-type layer channel for layer；
To, in the step (D), the N-type electrode needle of N-type electrode quilt in a manner of being formed in the N-type layer channel
The P-type electrode needle for being electrically connected to the N-type layer and the P-type electrode is electrically connected in a manner of being formed in the P-type layer channel
In the P-type layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810644024.9A CN108878600A (en) | 2018-06-21 | 2018-06-21 | The flip-chip and its manufacturing method of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810644024.9A CN108878600A (en) | 2018-06-21 | 2018-06-21 | The flip-chip and its manufacturing method of light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108878600A true CN108878600A (en) | 2018-11-23 |
Family
ID=64340158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810644024.9A Pending CN108878600A (en) | 2018-06-21 | 2018-06-21 | The flip-chip and its manufacturing method of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108878600A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671829A (en) * | 2018-12-13 | 2019-04-23 | 合肥彩虹蓝光科技有限公司 | A kind of flip-over type light-emitting diode chip for backlight unit preparation method |
| CN113410364A (en) * | 2021-06-18 | 2021-09-17 | 聚灿光电科技（宿迁）有限公司 | Micro LED and preparation method thereof |
| WO2023274357A1 (en) * | 2021-07-01 | 2023-01-05 | 厦门乾照光电股份有限公司 | Micro light-emitting element and preparation method therefor |
| CN116230733A (en) * | 2023-05-09 | 2023-06-06 | 江西兆驰半导体有限公司 | Micro LED chip and preparation method thereof |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090315965A1 (en) * | 2006-10-27 | 2009-12-24 | Canon Kabushiki Kaisha | Led array manufacturing method, led array and led printer |
| JP2012104730A (en) * | 2010-11-12 | 2012-05-31 | Hitachi Cable Ltd | Semiconductor light-emitting element |
| KR20130030178A (en) * | 2011-09-16 | 2013-03-26 | 서울옵토디바이스주식회사 | Light emitting diode and method of fabricating the same |
| CN104576858A (en) * | 2013-10-15 | 2015-04-29 | 上海工程技术大学 | Novel flip LED chip structure and manufacturing method thereof |
| KR20150055390A (en) * | 2013-11-13 | 2015-05-21 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN104882523A (en) * | 2014-02-27 | 2015-09-02 | 山东浪潮华光光电子股份有限公司 | GaN-based light-emitting diode chip with gradually-changed refractive index of passivation layer, and manufacturing method of GaN-based light-emitting diode chip |
| CN105304786A (en) * | 2015-11-13 | 2016-02-03 | 杭州士兰明芯科技有限公司 | Light emitting diode (LED) chip and fabrication method thereof |
| KR101609763B1 (en) * | 2015-01-16 | 2016-04-07 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| US20160329461A1 (en) * | 2015-02-17 | 2016-11-10 | Genesis Photonics Inc. | Light emitting diode |
| KR20170027490A (en) * | 2015-09-02 | 2017-03-10 | 서울바이오시스 주식회사 | LIGHT-EMITTING apparatus AND METHOD OF FABRICATING THE SAME |
| US20170108937A1 (en) * | 2015-10-16 | 2017-04-20 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip, light emitting device and electronic device including the same |
| KR20170052900A (en) * | 2015-11-05 | 2017-05-15 | 서울바이오시스 주식회사 | LIGHT-EMITTING apparatus WITH HIGH EFFICIENCY |
| CN107863434A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of highlighted flip LED chips with insulation protection structure and preparation method thereof |
| US20180145224A1 (en) * | 2015-07-10 | 2018-05-24 | Seoul Viosys Co., Ltd. | Light emitting diode, method for manufacturing the same, and light emitting device module having the same |
| KR20180059406A (en) * | 2015-10-16 | 2018-06-04 | 서울바이오시스 주식회사 | Compact light emitting diode chip, light emitting device and electronic device including the same |
| CN208478364U (en) * | 2018-06-21 | 2019-02-05 | 厦门乾照光电股份有限公司 | The flip-chip of light emitting diode |
-
2018
- 2018-06-21 CN CN201810644024.9A patent/CN108878600A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090315965A1 (en) * | 2006-10-27 | 2009-12-24 | Canon Kabushiki Kaisha | Led array manufacturing method, led array and led printer |
| JP2012104730A (en) * | 2010-11-12 | 2012-05-31 | Hitachi Cable Ltd | Semiconductor light-emitting element |
| KR20130030178A (en) * | 2011-09-16 | 2013-03-26 | 서울옵토디바이스주식회사 | Light emitting diode and method of fabricating the same |
| CN104576858A (en) * | 2013-10-15 | 2015-04-29 | 上海工程技术大学 | Novel flip LED chip structure and manufacturing method thereof |
| KR20150055390A (en) * | 2013-11-13 | 2015-05-21 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| CN104882523A (en) * | 2014-02-27 | 2015-09-02 | 山东浪潮华光光电子股份有限公司 | GaN-based light-emitting diode chip with gradually-changed refractive index of passivation layer, and manufacturing method of GaN-based light-emitting diode chip |
| KR101609763B1 (en) * | 2015-01-16 | 2016-04-07 | 주식회사 세미콘라이트 | Semiconductor light emitting device |
| US20160329461A1 (en) * | 2015-02-17 | 2016-11-10 | Genesis Photonics Inc. | Light emitting diode |
| US20180145224A1 (en) * | 2015-07-10 | 2018-05-24 | Seoul Viosys Co., Ltd. | Light emitting diode, method for manufacturing the same, and light emitting device module having the same |
| KR20170027490A (en) * | 2015-09-02 | 2017-03-10 | 서울바이오시스 주식회사 | LIGHT-EMITTING apparatus AND METHOD OF FABRICATING THE SAME |
| US20170108937A1 (en) * | 2015-10-16 | 2017-04-20 | Seoul Viosys Co., Ltd. | Compact light emitting diode chip, light emitting device and electronic device including the same |
| KR20180059406A (en) * | 2015-10-16 | 2018-06-04 | 서울바이오시스 주식회사 | Compact light emitting diode chip, light emitting device and electronic device including the same |
| KR20170052900A (en) * | 2015-11-05 | 2017-05-15 | 서울바이오시스 주식회사 | LIGHT-EMITTING apparatus WITH HIGH EFFICIENCY |
| CN105304786A (en) * | 2015-11-13 | 2016-02-03 | 杭州士兰明芯科技有限公司 | Light emitting diode (LED) chip and fabrication method thereof |
| CN107863434A (en) * | 2017-11-13 | 2018-03-30 | 佛山市国星半导体技术有限公司 | A kind of highlighted flip LED chips with insulation protection structure and preparation method thereof |
| CN208478364U (en) * | 2018-06-21 | 2019-02-05 | 厦门乾照光电股份有限公司 | The flip-chip of light emitting diode |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671829A (en) * | 2018-12-13 | 2019-04-23 | 合肥彩虹蓝光科技有限公司 | A kind of flip-over type light-emitting diode chip for backlight unit preparation method |
| CN113410364A (en) * | 2021-06-18 | 2021-09-17 | 聚灿光电科技（宿迁）有限公司 | Micro LED and preparation method thereof |
| CN113410364B (en) * | 2021-06-18 | 2022-11-25 | 聚灿光电科技（宿迁）有限公司 | Micro LED and preparation method thereof |
| WO2023274357A1 (en) * | 2021-07-01 | 2023-01-05 | 厦门乾照光电股份有限公司 | Micro light-emitting element and preparation method therefor |
| CN116230733A (en) * | 2023-05-09 | 2023-06-06 | 江西兆驰半导体有限公司 | Micro LED chip and preparation method thereof |
| CN116230733B (en) * | 2023-05-09 | 2023-07-21 | 江西兆驰半导体有限公司 | Micro LED chip and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103988322B (en) | Light emitting semiconductor device | |
| CN108878600A (en) | The flip-chip and its manufacturing method of light emitting diode | |
| CN205159352U (en) | Light emitting apparatus | |
| CN106340576B (en) | Light emitting element and light emitting device | |
| CN110224050A (en) | Semiconductor light-emitting apparatus | |
| WO2016177335A1 (en) | Group iii semiconductor light emitting device flip-chip structure | |
| US20150380609A1 (en) | Light Emitter With Coating Layers | |
| CN106415859B (en) | Semiconductor light-emitting elements and its manufacturing method | |
| TWI601312B (en) | Optoelectronic semiconductor chip | |
| CN103975451A (en) | Method for manufacturing semiconductor light-emitting element | |
| CN108365074A (en) | Light emitting semiconductor device | |
| CN101901862A (en) | Semiconductor light emitting element | |
| CN103946994A (en) | Semiconductor light emitting device | |
| CN103178179A (en) | Silicide compound substrate GaN based LED (Light-Emitting Diode) chip with two patterned sides and manufacturing method thereof | |
| TW202029533A (en) | Light-emitting device and manufacturing method thereof | |
| CN206834196U (en) | A kind of micron-scale flip LED chips | |
| CN208478364U (en) | The flip-chip of light emitting diode | |
| CN104037294B (en) | GaN-based light-emitting diode and manufacturing method thereof | |
| CN110100319A (en) | Opto-electronic semiconductor chip and method for manufacturing opto-electronic semiconductor chip | |
| CN105070799B (en) | An LED chip manufacture method | |
| US20100237372A1 (en) | Light emitting device | |
| CN110071200A (en) | Resonator light emitting diode and its manufacturing method | |
| CN113555484B (en) | High-luminous-efficiency flip LED chip and preparation method thereof | |
| CN113410364B (en) | Micro LED and preparation method thereof | |
| CN208797027U (en) | The flip-chip of light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |