CN110071200A - Resonator light emitting diode and its manufacturing method - Google Patents
Resonator light emitting diode and its manufacturing method Download PDFInfo
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- CN110071200A CN110071200A CN201910215605.5A CN201910215605A CN110071200A CN 110071200 A CN110071200 A CN 110071200A CN 201910215605 A CN201910215605 A CN 201910215605A CN 110071200 A CN110071200 A CN 110071200A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
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- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention discloses a kind of resonator light emitting diode and its manufacturing methods, belong to technical field of semiconductors.The resonator light emitting diode includes substrate and stacks gradually N-type layer, active layer, P-type layer, transparency conducting layer, passivation layer over the substrate, P-type electrode is equipped on the P-type layer and the transparency conducting layer, the N-type layer is equipped with N-type electrode, the one side far from the N-type layer of the substrate is equipped with lower mirror layer, and the passivation layer is equipped with upper reflector layer.It can be at this time that can reach the requirement of lower high specular reflectivity of reflector by improving doping concentration of the Al in GaN.Since lower mirror layer is arranged in the one side of separate N-type layer of substrate, the concentration for improving Al will not influence the epitaxial quality of RCLED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of resonator light emitting diode and its manufacturing method.
Background technique
Resonator light emitting diode (Resonant Cavity Light Emitting Diode, abbreviation RCLED) is one
The advantages of planting novel light-emitting diode (LED) structure, being provided simultaneously with traditional LED and planar laser with vertical cavity (VCSEL), tool
There are good application value and vast market prospect, is now chiefly used in fiber optic communication field.
The basic structure of RCLED includes upper reflector layer, lower mirror layer, is clipped in upper reflector layer and lower mirror layer
Between active layer and conducting electrode.Wherein, upper reflector layer and lower mirror layer generally use alternately stacked AlGaN layer
And GaN layer or alternately stacked InAlGaN layers and GaN layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
For from the RCLED for going out light above, the reflectivity of upper reflector layer is less than lower mirror layer.Existing lower reflection
Mirror layer, which mainly passes through, improves the requirement that doping concentration of the Al in GaN reaches lower mirror layer high reflectance, but high-dopant concentration
Al will affect the epitaxial quality of RCLED, cause RCLED lattice mismatch, a large amount of dislocations and defect, extreme influence RCLED occur
Application.
Summary of the invention
The embodiment of the invention provides a kind of resonator light emitting diode and its manufacturing methods, can be in reflecting mirror under raising
Reflectivity while, guarantee the epitaxial quality of RCLED.The technical solution is as follows:
On the one hand, the present invention provides a kind of resonator light emitting diode, the resonator light emitting diode include substrate,
And stack gradually N-type layer, active layer, P-type layer, transparency conducting layer, passivation layer over the substrate, the P-type layer and institute
It states and is equipped with P-type electrode on transparency conducting layer, the N-type layer is equipped with N-type electrode,
The one side far from the N-type layer of the substrate is equipped with lower mirror layer, and the passivation layer is equipped with upper reflector
Layer.
Further, in the one side equipped with the lower mirror layer of the substrate and the passivation layer be equipped with institute
It states and is equipped with multiple triangle pits in the one side of upper reflector layer, the part lower mirror layer and the part lower mirror layer
On the side wall of the triangle pit.
Further, the width of each triangle pit is 2.7~2.8um, and depth is 1.6~1.8um, tilt angle
It is 70~80 °.
Further, the distance between center line of the adjacent two triangle pits is 2.9~3.1um.
On the other hand, the present invention provides a kind of manufacturing method of resonator light emitting diode, the manufacturing method includes:
N-type layer, active layer and P-type layer are successively grown on substrate；
The groove that the N-type layer is extended to from the P-type layer is opened up in the P-type layer；
Transparency conducting layer is formed in the P-type layer；
Passivation layer is formed in the transparency conducting layer, the N-type layer；
Upper reflector layer is formed on the passivation layer；
The upper reflector layer, the passivation layer, the transparency conducting layer are performed etching, the P-type layer, described is made
Bright conductive layer and the N-type layer are exposed；
P-type electrode is set in the P-type layer and the transparency conducting layer, N-type electrode is set in the N-type layer；
Mirror layer under being formed in the one side far from the N-type layer of the substrate.
Further, it is described formed in one side of the substrate far from the N-type layer under mirror layer, comprising:
Multiple triangle pits are set in the one side far from the N-type layer of the substrate；
Reflecting mirror under being formed in the one side far from the N-type layer of the substrate and on the side wall of the triangle pit
Layer.
It is further, described that upper reflector layer is formed on the passivation layer, comprising:
Multiple triangle pits are set in the one side far from the substrate of the passivation layer；
Upper reflector is formed in the one side far from the substrate of the passivation layer and on the side wall of the triangle pit
Layer.
Further, the width of each triangle pit is 2.7~2.8um, depth is 1.6~1.8um, tilt angle
It is 70~80 °.
Further, the distance between adjacent center line of two triangle pits is 2.9~3.1um.
Further, under being formed in the one side far from the N-type layer of the substrate before mirror layer, the manufacture
Method further include:
The substrate is thinned.
Technical solution provided in an embodiment of the present invention has the benefit that
It, at this time can be by improving Al in GaN by the way that lower mirror layer to be arranged in the one side of separate N-type layer of substrate
In doping concentration be that can reach the requirement of lower high specular reflectivity of reflector.Since the separate N-type of substrate is arranged in lower mirror layer
In the one side of layer, therefore the concentration for improving Al will not influence the epitaxial quality of RCLED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of resonator light emitting diode provided in an embodiment of the present invention；
Fig. 2 is a kind of manufacturing method flow chart of resonator light emitting diode provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of resonator light emitting diode provided in an embodiment of the present invention, as shown in Figure 1, humorous
The chamber light emitting diode that shakes includes substrate 1 and the N-type layer being sequentially laminated on substrate 12, active layer 3, P-type layer 4, electrically conducting transparent
Layer 5, passivation layer 6, P-type electrode 7 is equipped in P-type layer 4 and transparency conducting layer 5, and N-type layer 2 is equipped with N-type electrode 8.
Passivation layer 6 is equipped with upper reflector layer 9, and the one side of the separate N-type layer 2 of substrate 1 is equipped with lower mirror layer 10.
The embodiment of the present invention can be led at this time by the way that lower mirror layer to be arranged in the one side of separate N-type layer of substrate
Crossing doping concentration of the raising Al in GaN can reach the requirement of lower high specular reflectivity of reflector.Since the setting of lower mirror layer exists
In the one side of the separate N-type layer of substrate, therefore the concentration for improving Al will not influence the epitaxial quality of RCLED.
Further, the one side equipped with upper reflector layer 9 of passivation layer 6 is equipped with multiple upper triangle pit 6a, on part
Mirror layer 9 is located on the side wall of multiple upper triangle pit 6a.
The one side equipped with lower mirror layer 10 of substrate 1 is equipped with multiple lower triangle pit 1a, the lower mirror layer 10 in part
On the side wall of multiple lower triangle pit 6a.
Due to the RCLED of existing not set triangle pit, behind reflecting layer, then meeting vertical exit passes through light
Active layer, part reflected light can be absorbed by active layer, cause the light extraction efficiency of RCLED lower.Therefore, the present invention passes through setting three
Angle pit, and reflecting layer is arranged on triangle pit, can form diffusing reflection structure, so that by upper reflector layer and lower anti-
The reflected light for penetrating mirror layer is emitted from all directions, reduces the probability that reflected light is absorbed by active layer, and improve RCLED goes out light
Efficiency.The surface roughness of substrate and passivation layer, the surface phase with smooth flat type are increased by the way that triangle pit is arranged simultaneously
There is higher adhesiveness than, the surface equipped with triangle pit, it is possible to reduce upper reflector layer and lower mirror layer fall off.
Optionally, as shown in Figure 1, the width d of each triangle pit is 2.7~2.8um, height h is 1.6~1.8um, incline
Rake angle θ is 70~80 DEG C.At this point, the light extraction efficiency highest of RCLED, the luminous efficiency of RCLED are best.
Further, the distance between adjacent center line of two triangle pits L is 2.9~3.1um.
In the present embodiment, upper reflector layer 9 and lower mirror layer 10 include multiple alternately stacked AlGaN layers and
GaN layer or alternately stacked InAlGaN layers and GaN layer.
In another implementation of the invention, upper reflector layer 9 and lower mirror layer 10 include multiple alternating layers
Folded Ti3O5Layer and SiO2Layer.Ti3O5Ti simple substance more more than the oxide of remaining Ti, energy and O can be resolved into2Sufficiently reaction, shape
At TiO2, be conducive to the efficient utilization of Ti.Wherein, Ti3O5Layer is high-index material, SiO2Layer is low-index material.
Optionally, upper reflector layer 9 is equal with the number of plies of lower mirror layer 10, is 48 layers.
Optionally, upper reflector layer 9 is identical with the thickness of lower mirror layer 10, is 3.7~4.7um.
Preferably, the thickness of upper reflector layer 9 and lower mirror layer 10 is 4.2um.
Optionally, the last layer SiO in upper reflector layer 9 and lower mirror layer 102Layer with a thickness of 5000 angstroms.
Optionally, the distance between upper reflector layer and lower mirror layer D0It can satisfy following formula:
Wherein, k is odd number, and Σ i is λ when taking all values to i0/niSummation, i take different value to represent 9 He of upper reflector layer
Different layers between lower mirror layer 10, λ0The central wavelength of light, n are generated for resonator light emitting diodeiFor upper reflector layer 9
The refractive index of each layer between lower mirror layer 10.
It is readily apparent that, the condition for forming resonant cavity is to form standing wave, and standing wave requires back wave and outgoing wave cancellation, i.e., instead
The phase difference of ejected wave and back wave is π.Since wavelength/refractive index is the effective wavelength of light in the medium, k is odd number, therefore on
The distance between mirror layer 9 and lower mirror layer 10 are equal to 1/2 wavelength, 3/2 wavelength, 5/2 wavelength etc., can satisfy resonant cavity
Condition (phase difference of back wave and back wave be π).
Specifically, N-type layer 2 is N-type GaN layer, and active layer 3 includes alternately stacked InGaN layer and GaN layer, and P-type layer 4 is P
Type GaN layer.
Optionally, substrate 1 can be 002 surface sapphire substrate, SiC substrate or Si substrate.
Optionally, the material that transparency conducting layer 5 uses may include tin indium oxide (ITO), the tin oxide for adulterating fluorine
(FTO), at least one of graphene and zinc oxide (ZnO).
Preferably, the material that transparency conducting layer 5 uses can be ITO, most commonly used.
Optionally, the thickness of passivation layer 6 can be 10nm~500nm.
Preferably, the thickness of passivation layer 6 can be 80nm.
Optionally, the material that passivation layer 6 uses may include silica, silicon nitride, aluminium oxide, at least one in magnesium fluoride
Kind, the problems such as protecting to light emitting diode, avoid reverse leakage, improve the reliability of light emitting diode.
Preferably, the material that passivation layer 6 uses can be silica, to use etchant solution aperture to form electrode.
Optionally, the material that P-type electrode 7 uses may include at least one of gold, silver, aluminium, nickel, platinum, titanium.
Preferably, P-type electrode 7 can be the layers of chrome stacked gradually, aluminium layer, layers of chrome, titanium layer, layers of chrome, be contacted, instead with being applicable in
The effects of light, conduction.
Optionally, the material that N-type electrode 8 uses may include at least one of gold, silver, aluminium, chromium, nickel, platinum, titanium.
Fig. 2 is a kind of manufacturing method flow chart of resonator light emitting diode provided in an embodiment of the present invention, such as Fig. 2 institute
Show, which includes:
Step 201 successively grows N-type layer, active layer and P-type layer on substrate.
Optionally, substrate 1 can be 002 surface sapphire substrate.
Specifically, N-type layer 2 is N-type GaN layer, and active layer 3 includes alternately stacked InGaN layer and GaN layer, and P-type layer 4 is P
Type GaN layer.
Specifically, which may include:
Using metallo-organic compound chemical gaseous phase deposition (Metal-organicChemicalVapor Deposition,
Abbreviation MOCVD) technology successively grows N-type layer 2, active layer 3, P-type layer 4 on substrate 1.
In another implementation of the present embodiment, step 201 may include:
At least one layer AlN buffer layer is formed on substrate 1；
N-type layer 2, active layer 3 and P-type layer 4 are sequentially formed on AlN buffer layer.
It is to be appreciated that being initially formed AlN buffer layer between substrate 1 and N-type layer 2, be conducive to N-type layer 2, active layer 3 and P
The growth of type layer 4 improves crystal quality.
Step 202 opens up the groove that N-type layer is extended to from P-type layer in P-type layer.
Specifically, which may include:
The groove that N-type layer 2 is extended to from P-type layer 4 is opened up in P-type layer 4 using photoetching process.
More specifically, opening up the groove for extending to N-type layer 2 from P-type layer 4 in P-type layer 4 using photoetching process, can wrap
It includes:
A layer photoresist is formed in P-type layer 4；
Photoresist is exposed and is developed, the photoresist of setting figure is formed；
Under the protection of photoresist, using sense coupling (Inductive Coupled Plasma, letter
Claiming ICP) technology opens up the groove that N-type layer 2 is extended to from P-type layer 4 in P-type layer 4；
Stripping photoresist.
Wherein, the depth of groove be greater than the sum of P-type layer 4 and the thickness of active layer 3, and the depth of groove be less than P-type layer 4,
The sum of active layer 3 and the thickness of N-type layer 2.
Step 203 forms transparency conducting layer in P-type layer.
Optionally, transparency conducting layer use material may include tin indium oxide (ITO), adulterate fluorine tin oxide (FTO),
At least one of graphene and zinc oxide (ZnO).
Preferably, the material that transparency conducting layer uses can be ITO, most commonly used.
Specifically, which may include:
Using physical vapour deposition (PVD) (Physical Vapor Deposition, abbreviation PVD) method N-type layer 2, groove,
Transparency conducting layer 5 is formed in P-type layer 4；
Using the transparency conducting layer 5 in photoetching process removal N-type layer 2, the transparency conducting layer 5 in P-type layer 4 is left.
More specifically, leaving the electrically conducting transparent in P-type layer 4 using the transparency conducting layer 5 in photoetching process removal N-type layer 2
Layer 5, may include:
A layer photoresist is formed on transparency conducting layer 5；
Photoresist is exposed and is developed, the photoresist of setting figure is formed；
Under the protection of the photoresist of setting figure, corrosion cleaning is carried out to transparency conducting layer 5, is left saturating in P-type layer 4
Bright conductive layer 5；
Stripping photoresist.
Step 204 forms passivation layer in transparency conducting layer, N-type layer.
Optionally, the thickness of passivation layer 6 can be 10nm~500nm.
Preferably, the thickness of passivation layer 6 can be 80nm.
Optionally, the material that passivation layer 6 uses may include silica, silicon nitride, aluminium oxide, at least one in magnesium fluoride
Kind, the problems such as protecting to RCLED, avoid reverse leakage, improve the reliability of RCLED.
Preferably, the material that passivation layer 6 uses can be silica, to use etchant solution aperture to form electrode.
Specifically, which may include:
Using plasma enhances chemical vapor deposition (Plasma Enhanced Chemical Vapor
Deposition, abbreviation PECVD) technology forms passivation layer 6 in N-type layer 4 and transparency conducting layer 5.
Step 205 forms upper reflector layer on the passivation layer.
Optionally, in conjunction with Fig. 1, step 205 includes:
Multiple upper triangle pit 6a are set in the one side of the separate substrate 1 of passivation layer 6；
In the one side of the separate substrate 1 of passivation layer 6 and the side wall of upper triangle pit 6a forms upper reflector layer 9.
Further, each the width d of upper triangle pit 6a is 2.7~2.8um, height h is 1.6~1.8um, inclination angle
Spending θ is 70~80 DEG C.At this point, the light extraction efficiency highest of RCLED, the luminous efficiency of RCLED are best.
Further, the distance between adjacent center line of two triangle pit 6a L is 2.9~3.1um.
In the present embodiment, upper reflector layer 9 includes multiple alternately stacked AlGaN layers and GaN layer or alternately laminated
InAlGaN layer and GaN layer.
Optionally, upper reflector layer 9 includes multiple alternately stacked Ti3O5Layer and SiO2Layer.
Step 206 performs etching upper reflector layer, passivation layer, transparency conducting layer, makes P-type layer, transparency conducting layer and N
Type layer exposes.
Specifically, step 206 may include:
A layer photoresist is formed on upper reflector layer 9；
Part photoresist is dissolved using photoetching process；
Under the protection of photoresist, ICP etching is carried out to upper reflector layer 9, formation extends to transparent from upper reflector layer 9
The through-hole that N-type layer 2 is extended to the through-hole of P-type layer 4 and from upper reflector layer 9 of conductive layer 5.
P-type electrode is arranged in P-type layer and transparency conducting layer in step 207, and N-type electrode is arranged in N-type layer.
Optionally, the material that P-type electrode 7 uses may include at least one of gold, silver, aluminium, nickel, platinum, titanium.
Preferably, P-type electrode 7 can be the layers of chrome stacked gradually, aluminium layer, layers of chrome, titanium layer, layers of chrome, be contacted, instead with being applicable in
The effects of light, conduction.
Optionally, the material that N-type electrode 8 uses may include at least one of gold, silver, aluminium, chromium, nickel, platinum, titanium.
Preferably, electrode can be formed using evaporation technique, rate is very fast.
Optionally, electrode can also be formed using sputtering technology.
Further, after executing step 207, before executing step 208, which can also include:
Organic semiconductor device, to improve chip cooling effect.
It is alternatively possible to by substrate thinning to 180-200um.
Step 208, in the one side of the separate N-type layer of substrate formed under mirror layer.
Specifically, in conjunction with Fig. 1, step 208 may include:
Multiple triangle pits are set in the one side of the separate N-type layer of substrate；
Mirror layer under being formed in the one side of the separate N-type layer of substrate and on the side wall of triangle pit.
Further, the width d of each triangle pit is 2.7~2.8um, height h is 1.6~1.8um, tilt angle theta
It is 70~80 DEG C.
Further, the distance between adjacent center line of two triangle pits L is 2.9~3.1um.
In the present embodiment, lower mirror layer includes multiple alternately stacked AlGaN layers and GaN layer or alternately laminated
InAlGaN layer and GaN layer.
Optionally, lower mirror layer includes multiple alternately stacked Ti3O5Layer and SiO2Layer.
The embodiment of the present invention can be led at this time by the way that lower mirror layer to be arranged in the one side of separate N-type layer of substrate
Crossing doping concentration of the raising Al in GaN can reach the requirement of lower high specular reflectivity of reflector.Since the setting of lower mirror layer exists
In the one side of the separate N-type layer of substrate, therefore the concentration for improving Al will not influence the epitaxial quality of RCLED.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of resonator light emitting diode, the resonator light emitting diode includes substrate and is sequentially laminated on the lining
P is equipped on N-type layer, active layer on bottom, P-type layer, transparency conducting layer, passivation layer, the P-type layer and the transparency conducting layer
Type electrode, the N-type layer are equipped with N-type electrode, it is characterised in that:
The one side far from the N-type layer of the substrate is equipped with lower mirror layer, and the passivation layer is equipped with upper reflector layer.
2. resonator light emitting diode according to claim 1, which is characterized in that the substrate is equipped with the lower reflection
Mirror layer on and the passivation layer be equipped with the upper reflector layer while on be equipped with multiple triangle pits, portion
The lower mirror layer and the part lower mirror layer is divided to be located on the side wall of the triangle pit.
3. resonator light emitting diode according to claim 2, which is characterized in that the width of each triangle pit is
2.7~2.8um, depth are 1.6~1.8um, and tilt angle is 70~80 °.
4. resonator light emitting diode according to claim 2, which is characterized in that the triangle pit of adjacent two
The distance between center line is 2.9~3.1um.
5. a kind of manufacturing method of resonator light emitting diode, which is characterized in that the manufacturing method includes:
N-type layer, active layer and P-type layer are successively grown on substrate；
The groove that the N-type layer is extended to from the P-type layer is opened up in the P-type layer；
Transparency conducting layer is formed in the P-type layer；
Passivation layer is formed in the transparency conducting layer, the N-type layer；
Upper reflector layer is formed on the passivation layer；
The upper reflector layer, the passivation layer, the transparency conducting layer are performed etching, makes the P-type layer, described transparent lead
Electric layer and the N-type layer are exposed；
P-type electrode is set in the P-type layer and the transparency conducting layer, N-type electrode is set in the N-type layer；
Mirror layer under being formed in the one side far from the N-type layer of the substrate.
6. manufacturing method according to claim 5, which is characterized in that the separate N-type layer in the substrate
It is upper on one side to form lower mirror layer, comprising:
Multiple triangle pits are set in the one side far from the N-type layer of the substrate；
Mirror layer under being formed in the one side far from the N-type layer of the substrate and on the side wall of the triangle pit.
7. manufacturing method according to claim 5, which is characterized in that described to form upper reflector on the passivation layer
Layer, comprising:
Multiple triangle pits are set in the one side far from the substrate of the passivation layer；
Upper reflector layer is formed in the one side far from the substrate of the passivation layer and on the side wall of the triangle pit.
8. manufacturing method according to claim 6 or 7, which is characterized in that the width of each triangle pit be 2.7~
2.8um, depth are 1.6~1.8um, and tilt angle is 70~80 °.
9. manufacturing method according to claim 6 or 7, which is characterized in that the center line of two adjacent triangle pits it
Between distance be 2.9~3.1um.
10. according to the described in any item manufacturing methods of claim 5~7, which is characterized in that in the substrate far from the N
It is formed in the one side of type layer before lower mirror layer, the manufacturing method further include:
The substrate is thinned.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910215605.5A CN110071200B (en) | 2019-03-21 | 2019-03-21 | Resonant cavity light emitting diode and manufacturing method thereof |
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| CN201910215605.5A CN110071200B (en) | 2019-03-21 | 2019-03-21 | Resonant cavity light emitting diode and manufacturing method thereof |
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| CN110071200B CN110071200B (en) | 2021-04-27 |
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