KR20160139182A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
KR20160139182A
KR20160139182A KR1020150073598A KR20150073598A KR20160139182A KR 20160139182 A KR20160139182 A KR 20160139182A KR 1020150073598 A KR1020150073598 A KR 1020150073598A KR 20150073598 A KR20150073598 A KR 20150073598A KR 20160139182 A KR20160139182 A KR 20160139182A
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KR
South Korea
Prior art keywords
light emitting
emitting cell
contact electrode
electrode
insulating layer
Prior art date
Application number
KR1020150073598A
Other languages
Korean (ko)
Inventor
오세희
김재권
김현아
김종규
Original Assignee
서울바이오시스 주식회사
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Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020150073598A priority Critical patent/KR20160139182A/en
Priority to CN201680010257.2A priority patent/CN107223285B/en
Priority to DE112016000731.0T priority patent/DE112016000731T5/en
Priority to CN201910953376.7A priority patent/CN110690242B/en
Priority to CN201911070837.2A priority patent/CN110854250B/en
Priority to EP16749413.7A priority patent/EP3258507A2/en
Priority to CN201911037711.5A priority patent/CN110676286B/en
Priority to PCT/KR2016/001255 priority patent/WO2016129873A2/en
Priority to CN201910175807.1A priority patent/CN110061027B/en
Priority to CN201911073767.6A priority patent/CN110690249B/en
Priority to CN201911074035.9A priority patent/CN110690250A/en
Publication of KR20160139182A publication Critical patent/KR20160139182A/en
Priority to US15/409,306 priority patent/US10438992B2/en
Priority to US16/594,239 priority patent/US11282892B2/en
Priority to US17/697,410 priority patent/US20220208851A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a light emitting device, and a light emitting device according to an embodiment of the present invention includes: a first light emitting cell; A second light emitting cell disposed on the same plane as the first light emitting cell and electrically connected to the first light emitting cell; And a plurality of electrode connection parts electrically connecting the first light emitting cell and the second light emitting cell, wherein the plurality of electrode connection parts extend from the first light emitting cell to cover a part of the upper part of the second light emitting cell, 2 light emitting cells and may be disposed on one side along one side of the plane shape of the second light emitting cells. According to the present invention, when a plurality of light emitting cells are electrically connected in series, the electrode connection portion for electrically connecting the light emitting cells is disposed along one side of the adjacent light emitting cells, So that the light efficiency of the light emitting element can be maximized.

Description

[0001] LIGHT EMITTING DIODE [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly, to a light emitting device having improved light efficiency of the light emitting device.

In recent years, there has been an increasing demand for a large-area flip chip type light emitting device having excellent heat dissipation efficiency, with an increasing demand for a small high power light emitting device. As the electrode is directly bonded to the secondary substrate, the flip chip type light emitting device has a merit that heat dissipation efficiency is higher than that of a horizontal type light emitting device because a wire for supplying external power is not used. That is, even when a high-density current is applied to the flip chip type light emitting device, the heat is transferred to the secondary substrate side, so that the flip chip type light emitting device can be used as a high output light emitting source.

In order to reduce the size of the light emitting device, there is an increasing demand for a chip scale package in which the light emitting device itself is used as a package by omitting the step of separately packaging the light emitting device into a housing or the like. The flip chip type light emitting device can be used in a chip scale package as described above because the electrode can function similarly to the lead of the package.

Recently, as high power products are required, many studies have been made to increase the luminous efficiency of a chip scale package. Even if a light emitting device is manufactured using a plurality of light emitting cells, a technique capable of maximizing the light efficiency of the light emitting device is required.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device capable of increasing light efficiency when a high power is applied using a plurality of light emitting structures.

A light emitting device according to an embodiment of the present invention includes: a first light emitting cell; A second light emitting cell disposed on the same plane as the first light emitting cell and electrically connected to the first light emitting cell; And a plurality of electrode connection parts electrically connecting the first light emitting cell and the second light emitting cell, wherein the plurality of electrode connection parts extend from the first light emitting cell to cover a part of the upper part of the second light emitting cell, 2 light emitting cells and may be disposed on one side along one side of the plane shape of the second light emitting cells.

In this case, the first light emitting cell and the second light emitting cell may be arranged such that one side of the first light emitting cell and the second light emitting cell are adjacent to each other, As shown in Fig.

Alternatively, the first light emitting cell and the second light emitting cell may be arranged such that one edge of the first light emitting cell and the second light emitting cell are adjacent to each other, and the plurality of electrode connections may extend over one side of the second light emitting cell in the first light emitting cell .

Each of the first and second light emitting cells includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer Structure; A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And an insulating layer covering a portion of the first contact electrode and the second contact electrode for insulation between the first contact electrode and the second contact electrode.

The insulating layer may include a first insulating layer formed to cover the second contact electrode and including a first opening and a second opening that partially expose the first conductive type semiconductor layer and the second contact, And a second insulating layer formed to cover the first contact electrode covering the first insulating layer and including a third opening and a fourth opening partially partially exposing the first contact electrode and the second contact electrode, can do.

The first insulating layer may include a preliminary insulating layer covering a top surface or a part of a side surface of the light emitting structure; And a main insulating layer formed to cover the preliminary insulating layer and the second contact electrode.

The first contact electrode of the first light emitting cell may extend above the light emitting structure of the second light emitting cell and may be in ohmic contact with the second contact electrode.

And a mesa including an imaginary second conductivity type semiconductor layer and an active layer, the first insulating layer may include a preliminary insulating layer covering a top portion of the mesa, and the second contact electrode may include a mesa The ohmic contact with the second conductivity type semiconductor layer can be achieved.

The substrate may further include a substrate disposed under the light emitting structure, and the substrate may have a plurality of patterns formed on an upper surface thereof.

At this time, a part of the plurality of patterns formed on the substrate, which is not covered by the light emitting structure but is exposed, may be formed to have a smaller size than the remaining part covered by the light emitting structure.

According to the present invention, when a plurality of light emitting cells are electrically connected in series, the electrode connection portion for electrically connecting the light emitting cells is disposed along one side of the adjacent light emitting cells, So that the light efficiency of the light emitting element can be maximized.

The first contact electrode for electrically connecting the light emitting cells extends to the adjacent light emitting cells and is electrically connected to the second contact electrodes of the adjacent light emitting cells to reflect the light emitted between the light emitting cells, So that the light efficiency of the light emitting device can be maximized.

1 is a plan view showing a light emitting device according to an embodiment of the present invention.
2 is a plan view schematically illustrating a light emitting device according to an embodiment of the present invention.
3 is a cross-sectional view taken along the perforations AA ', BB' and CC 'of FIG.
4 is a plan view showing a light emitting device according to another embodiment of the present invention.
5 is a plan view illustrating a light emitting device according to another embodiment of the present invention.
6 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.
7 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
8 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
9 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

Preferred embodiments of the present invention will be described more specifically with reference to the accompanying drawings.

FIG. 1 is a plan view showing a light emitting device according to an embodiment of the present invention, and FIG. 1 is a plan view schematically illustrating a light emitting device according to an embodiment of the present invention. FIG. 3A is a sectional view taken along the perforated line AA 'of FIG. 1, FIG. 3B is a sectional view taken along BB' of FIG. 1, and FIG. 3C is a sectional view taken along the perforated line CC 'of FIG.

1 to 3, the light emitting device 100 according to an embodiment of the present invention includes first to fourth light emitting cells C1, C2, C3, and C4, first to third electrode connecting portions D1, D2, and D2, a first electrode pad 39, a second electrode pad 41, and a heat radiating pad 43.

1 and 2, in one embodiment of the present invention, the light emitting device 100 includes first through fourth light emitting cells C1, C2, C3, and C4 electrically connected in series, To fourth light emitting cells C1, C2, C3, and C4 are formed to have substantially the same area. Accordingly, in one embodiment of the present invention, four light emitting cells C1, C2, C3, and C4 are disposed adjacent to each other and arranged in a shape similar to a square.

Here, the four light emitting cells C1, C2, C3, and C4 are arranged such that the first light emitting cells C1 are arranged on the upper right side in the plane shape shown in Figs. 1 and 2, And is disposed on the lower right side. The third light emitting cell C3 may be disposed on the upper left side, and the fourth light emitting cell C4 may be disposed on the lower left side.

The first light emitting cell C1 is electrically connected to the second light emitting cell C2 through the first electrode connection D1 and the second light emitting cell C2 is electrically connected to the third light emitting cell C3, And the third light emitting cell C3 is electrically connected by the fourth light emitting cell C4 and the third electrode connecting portion D3. That is, the first to fourth light emitting cells C1, C2, C3, and C4 are electrically connected in series by the first to third electrode connection portions D1, D2, and D3.

At this time, as described above, the first light emitting cell C1 and the second light emitting cell C2 are arranged to correspond to one side according to the arrangement of the first through fourth light emitting cells C1, C2, C3, and C4 , And the third light emitting cell (C3) and the fourth light emitting cell (C4) are arranged to correspond to one side. However, the second light emitting cell C2 and the third light emitting cell C3 are not arranged so that one side of the second light emitting cell C2 and the third light emitting cell C3 are corresponding to each other. The first electrode connection part D1 for electrically connecting the first light emitting cell C1 and the second light emitting cell C2 is disposed on the second light emitting cell C2, And extend from one side to the second light emitting cell C2 side. The third electrode connection part D3 electrically connecting the third light emitting cell C3 and the fourth light emitting cell C4 is connected to the fourth light emitting cell C4.

However, the second light emitting cell C2 and the third light emitting cell C3 are not disposed adjacent to each other so that one side corresponds to the other. The second electrode connection part D2 is disposed on the third light emitting cell C3 so that the second electrode connection part D2 is formed on the third light emitting cell C3. The electrode 31 extends from the second light emitting cell C2 to the second electrode connection D2 disposed in the third light emitting cell C3.

Referring to FIGS. 1 and 2, the second electrode connection part D2 is formed on one side of the right side of the third light emitting cell C3. The first contact electrode 31 of the second light emitting cell C2 The elongated extension 31a extends between the first contact electrode 31 of the first light emitting cell C1 and the first contact electrode 31 of the third light emitting cell C3 and is connected to the second electrode connection portion D2 And is electrically connected. Of course, the extended portion 31a is separated from the first contact electrode 31 of the first light emitting cell C1 and the first contact electrode 31 of the third light emitting cell C3, and is insulated from each other. At this time, the first contact electrodes 31 of the light emitting cells C1, C2, C3, and C4 will be described in detail below.

As described above, the first to third electrode connection parts D1, D2 and D3 are formed on the second to fourth light emitting cells C2, C3 and C4, respectively. The first to third light emitting cells C1, C2, C3) adjacent to the first, second, third, and fourth light emitting cells C2, C3, C4, respectively. In addition, if the first to third electrode connection portions D1, D2, and D3 are plural, the first, second, and third light emitting cells C2, C3, and C4 may be spaced apart from each other along one side .

The first electrode pad 39 and the second electrode pad 41 are formed to cover a part of the fourth light emitting cell C4 and the first light emitting cell C1, respectively. The first electrode pad 39 is disposed at the corner of the fourth light emitting cell C4 and is electrically connected to the fourth light emitting cell C4 while the second electrode pad 41 is connected to the first light emitting cell C1. And is electrically connected to the first light emitting cell C1.

The first electrode pad 39 and the second electrode pad 41 are each formed in a triangular shape and the arrangement position of the first electrode pad 39 and the second electrode pad 41 is a light emitting Are arranged in a state of being maximally spaced apart from the planar shape of the element (100). A heat radiating pad 43 may be formed in a hexagonal shape between the first electrode pad 39 and the second electrode pad 41. The shapes of the first electrode pads 39, the second electrode pads 41 and the heat radiating pads 43 are not limited to those shown in the drawings, and may be variously modified as needed. However, .

The heat dissipation pad 43 is formed so as to cover most of the first to fourth light emitting cells C1, C2, C3 and C4. The first electrode pad 39 and the second electrode pad The second light emitting cell C2 and the third light emitting cell C3 in which the heat dissipation pad 41 is not provided are formed so as to cover the entire heat dissipation pad 43. [ Accordingly, the heat dissipation pad 43 is formed such that at least three surfaces of the heat dissipation pad 100 are exposed to the outside in a planar shape of the light emitting device 100, and an example thereof is a hexagonal shape. As described above, since the heat radiation pad 43 is formed over the entire area of the first to fourth light emitting cells C1, C2, C3, and C4, the first to fourth light emitting cells C1, C2, The heat generated by the applied current can be released more effectively.

The detailed structure of the first to fourth light emitting cells C1, C2, C3, and C4 will be described with reference to FIG.

3A, the first through fourth light emitting cells C1, C2, C3, and C4 are connected to the substrate 21, the light emitting structure 23, the first contact electrode 31, the second contact electrode 33, a first insulating layer 35, a second insulating layer 37, a first electrode pad 39, a second electrode pad 41, and a heat radiating pad 43.

The substrate 21 is not limited as long as it can grow the light emitting structure 23. For example, the substrate 21 may be a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. In an embodiment of the present invention, a plurality of patterns 21a may be formed on the upper surface of the substrate 21. [ A plurality of patterns 21a formed on the upper surface of the substrate 21 may be formed in a plurality of protrusions on the upper surface of the substrate 21 as shown in FIG. May be formed, or may be formed as a flat surface. Here, the plurality of patterns 21a formed on the upper surface of the substrate 21 may have a small size at a position where the light emitting structure 23 is not formed on the upper surface.

Further, the substrate 21 can be separated from the light emitting structure 23 using a known technique, and accordingly, the bottom surface of the light emitting structure 23 can have a surface with increased roughness.

The light emitting structure 23 includes a first conductivity type semiconductor layer 25, an active layer 27 located on the first conductivity type semiconductor layer 25, and a second conductivity type semiconductor layer 29 ). The first conductive semiconductor layer 25, the active layer 27 and the second conductive semiconductor layer 29 may include a Group III-V compound semiconductor. For example, (Al, Ga, In) N Based semiconductor, for example.

The first conductivity type semiconductor layer 25 may include an n-type impurity (for example, Si), the second conductivity type semiconductor layer 29 may include a p-type impurity (for example, Mg) It could be the opposite. The active layer 27 may include a multiple quantum well structure (MQW), and the composition ratio may be determined so as to emit light having a desired peak wavelength.

The light emitting structure 23 may include a region where the second conductivity type semiconductor layer 29 and the active layer 27 are partially removed and the first conductivity type semiconductor layer 25 is partially exposed. 3A, a first hole h1 may be formed through the second conductive semiconductor layer 29 and the active layer 27 to expose the first conductive semiconductor layer 25 . At this time, the shape and arrangement of the first holes h1 may be variously modified.

The light emitting structure 23 may include a mesa including the active layer 27 and the second conductivity type semiconductor layer 29. The mesa may further include a part of the first conductivity type semiconductor layer 25 have. The first hole h1 may be formed in the mesa to expose the first conductivity type semiconductor layer 25 and may include a plurality of first holes h1.

The first contact electrode 31 and the second contact electrode 33 may be in ohmic contact with the first conductivity type semiconductor layer 25 and the second conductivity type semiconductor layer 29, respectively. The second contact electrode 33 is formed to cover the upper portion of the second conductivity type semiconductor layer 29. The second contact electrode 33 is formed on the upper portion of the mesa. .

The second contact electrode 33 may be made of a material capable of ohmic contact with the second conductive semiconductor layer 29. For example, the second contact electrode 33 may include a metallic material or a conductive oxide. When the second contact electrode 33 includes a metallic material, the second contact electrode 33 may be formed of a reflective layer (not shown) which is in ohmic contact with the second conductive type semiconductor layer 29 and a reflective layer And a cover layer (not shown). Here, the reflective layer may include a metal and may be formed as a single layer or a multilayer.

The first insulating layer 35 is formed on the upper surface of the light emitting structure 23 and may be formed to cover the second contact electrode 33. The first insulating layer 35 may be formed to cover the side surface of the first hole h1 formed in the mesa. 3B and 3C, a second hole h2 may be formed in the first insulating layer 35 to partially expose the second contact electrode 33. In addition, as shown in FIGS. The first contact electrode 31 of the light emitting cell adjacent to the second contact electrode 33 through the second hole h2 can be in ohmic contact.

The first insulating layer 35 may include an insulating material and may include, for example, SiO 2 , SiN x , MgF 2 , and the like. The first insulating layer 35 may be formed of multiple layers, and may be formed by alternately stacking materials having different refractive indices Bragg reflectors may also be included.

3A to 3C, the first insulating layer 35 may be formed so as to cover a part of the substrate 21. As shown in FIG. In the manufacturing process of the light emitting device 100, the wafer may be individualized on a chip basis, and then the first insulating layer 35 may be formed on the first insulating layer 35. In this case, The first insulating layer 35 can be formed so as to cover a part of the substrate 21. The first insulating layer 35 may be formed to cover the side surface of the light emitting structure 23 exposed on the side surface of the substrate 21 and cover the substrate 21 to both ends of the light emitting device 100. [ And may be formed to cover the substrate 21 to both ends of the light emitting device 100. [

At this time, the first insulating layer 35 may be formed so as to cover a part of the substrate 21, but it may be formed so as to cover only a part of the substrate 21 without completely covering the plurality of patterns 21a formed on the substrate 21 have. Accordingly, a plurality of patterns 21a of the substrate 21 can be exposed to the upper portion of the first insulating layer 35 at the corresponding positions.

As shown in FIG. 3C, the first insulating layer 35 may be formed to cover part or all of the substrate 21 even in a space between the light emitting cells and the light emitting cells.

Meanwhile, the first insulation layer 35 may include a pre-insulation layer 35a and a main insulation layer 35b. The preliminary insulating layer 35a may be formed before the prebonded layer 35b so that the preliminary insulating layer 35a may be located under the pregion 35b.

The preliminary insulating layer 35a may cover a part of the light emitting structure 23 and may be formed to cover a part of the upper surface of the second contact electrode 33 or a side surface of the second contact electrode 33. [ The preliminary insulating layer 35a is formed to cover the upper surface of the light emitting structure 23, and then a part of the second conductive type semiconductor layer 29 may be exposed through etching. The second contact electrode 33 may be formed on the exposed second conductive semiconductor layer 29. Accordingly, the preliminary insulating layer 35a can be connected to the second contact electrode 33.

Further, the preliminary insulating layer 35a may be formed during the process of forming the second contact electrode 33. [ For example, when the second contact electrode 33 includes a conductive type oxide layer (not shown) and a reflective electrode layer (not shown), a conductive oxide layer is formed on the second conductive type semiconductor layer 29, The preliminary insulating layer 35a can be formed before forming the electrode layer. After forming the reflective electrode layer, the first insulating layer 35 may be formed by forming the passivation layer 35b covering the reflective electrode layer.

Preliminary isolation in one embodiment of the present invention layer (35a) may be formed of the same material as each other, the main clause yeoncheung (35b), for example, may include SiO 2.

The edge of the light emitting device 100 may be etched for chip unit isolation of the light emitting device 100 before the formation of the main split layer 35b. In this process, A plurality of patterns 21a exposed on the side can be etched together. 3A, the exposed plurality of patterns 21a may be formed to have a smaller size than the plurality of patterns 21a covered by the light emitting structure 23. [

The first contact electrode 31 is formed on the first insulating layer 35 and covers the entirety except the part of the first insulating layer 35. So that the first hole h1 formed in the mesa and the second hole h2 formed in the first insulating layer 35 can be filled. The first contact electrode 31 is in ohmic contact with the first conductivity type semiconductor layer 25 through the first hole h1 formed in the mesa as shown in FIG. As shown in FIGS. 3B and 3C, the first contact electrode 31 is electrically connected to the second contact electrode 33 of the adjacent light emitting cell through the second hole h2 formed in the first insulating layer 35, Can be contacted.

The first contact electrode 31 is formed so as to cover the entirety of the first insulating layer 35 except for a part thereof so that light emitted from the light emitting structure 23 is reflected by the first contact electrode 31 . 3A to 3C, the first contact electrode 31 is formed so as to cover the side surface of the substrate 21 and covers the side surface of the space separated between the light emitting cells. Accordingly, the light emitting structure 23 May be reflected by the first contact electrode 31 and may be emitted to the outside. The light efficiency of the light emitting device 100 can be maximized.

1 and 2, the first contact electrode 31 may include first to third electrode connection portions D1 and D2 extending from the first to third light emitting cells C1, C2, and C3, respectively, , D3). 3B, the first contact electrode 31 of the first light emitting cell C1 is extended to the upper portion of the second light emitting cell C2, As shown in FIG. The first contact electrode 31 extended from the first light emitting cell C1 is in ohmic contact with the second contact electrode 33 above the second light emitting cell C2.

3C, the first contact electrode 31 of the first light emitting cell C1 is formed on the first light emitting cell C1, the first contact electrode 31 of the first light emitting cell C1 is formed on the first light emitting cell C1, The extended portion 31a of the first light emitting cell 31 is formed to extend to the upper portion of the third light emitting cell C3 while filling the spaced space between the first light emitting cell C1 and the third light emitting cell C3. The extension 31a of the second light emitting cell C2 is electrically connected to the second contact electrode 33 of the third light emitting cell C3 through the second hole h2 at the top of the third light emitting cell C3, And the second electrode connection part D2 may be formed on the third light emitting cell C3. At this time, the extended portion 31a of the second light emitting cell C2 may be isolated from the first contact electrode 31 of the third light emitting cell C3 and may be isolated from the first light emitting cell C1 But may be isolated from the first contact electrode 31 of the first light emitting cell C1.

As described above, the first contact electrode 31 is in ohmic contact with the first conductivity type semiconductor layer 25 and reflects light. As a result, the first contact electrodes of the first through third light emitting cells C1, C2, and C3 are extended to the second through fourth light emitting cells C2, C3, and C4 for electrical connection, Emitting efficiency of the light-emitting element 100 can be increased.

The first contact electrode 31 may include a highly reflective metal layer such as an Al layer, and may be formed of a single layer or may be formed of multiple layers. The first contact electrode 31 may be formed of a metal such as Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag, and Au ≪ / RTI >

The second insulating layer 37 may be formed to cover the entirety of the first contact electrode 31 except for a part thereof. The second insulating layer 37 may have a first opening op1 for partially exposing the first contact electrode 31 and a second opening op1 for partially exposing the second contact electrode 33 op2 may be formed. The second openings op2 may be formed over the first insulating layer 35, the first contact electrodes 31 and the second insulating layer 37. The first openings op1 and the second openings op2 lt; / RTI > and < RTI ID = 0.0 > op2.

The first electrode pad 39 can make an ohmic contact with the first contact electrode 31 through the first opening op1 formed in the second insulating layer 37 and the second electrode pad 39 can be in ohmic contact with the second contact electrode 31 through the second opening op2, The pad 41 can make an ohmic contact with the second contact electrode 33. [

The second insulating layer 37 may include an insulating material and may include, for example, SiO 2 , SiN x , MgF 2 , and the like, and may include multiple layers, Lt; RTI ID = 0.0 > Bragg reflector. ≪ / RTI > When the second insulating layer 37 is composed of multiple layers, the uppermost layer of the second insulating layer 37 may be formed of SiN x . When the uppermost layer of the second insulating layer 37 is formed of SiN x , it is possible to effectively prevent moisture from penetrating into the light emitting structure 23. [

The first electrode pad 39, the second electrode pad 41 and the heat radiating pad 43 are located on the second insulating layer 37 and the first electrode pad 39 is positioned on the fourth light emitting cell C4 And the second electrode pad 41 may be electrically connected to the second contact electrode 33 of the first light emitting cell C1. As shown in FIG. 3A, the first electrode pad 39 may be in ohmic contact with the first contact electrode 31 through the first opening op1. The second electrode pad 41 may be in ohmic contact with the second contact electrode 33 through the second opening op2. The heat dissipation pad 43 may be disposed above the second insulation layer so as to be insulated from the first electrode pad 39 and the second electrode pad 41.

The first electrode pad 39 is formed on the fourth light emitting cell C4 and the first opening op1 is formed on the fourth light emitting cell C4. The first electrode pad 39 is in ohmic contact with the first contact electrode 31 of the fourth light emitting cell C4. The second electrode pad 41 is formed on the first light emitting cell C1 while being spaced apart from the heat radiation pad 43 by a predetermined distance and the second opening portion op2 is formed on the first light emitting cell C1 do. The second electrode pad 41 is in ohmic contact with the second contact electrode 33 of the first light emitting cell C1.

The heat radiating pad 43 may be formed to fill the space between the first to fourth light emitting cells C1, C2, C3, and C4, respectively, and may have a thickness of several tens of micrometers or more. The first electrode pad 39 and the second electrode pad 41 are formed to have the same thickness as the heat radiation pad 43 so that the light emitting device 100 itself can be used as a chip scale package.

The first electrode pad 39 and the second electrode pad 41 may be formed of a single layer or multiple layers, respectively, and may include a material having electrical conductivity. For example, the first electrode pad 39 and the second electrode pad 41 may include at least one of Cu, Pt, Au, Ti, Cr, Ni, Al, and Ag, Particles and non-metallic materials interposed between the metal particles. Here, the first electrode pad 39 and the second electrode pad 41 may be formed by plating, vapor deposition, dipping, or screen printing. In addition, the heat radiating pad 43 may include the same material as the first and second electrode pads 39 and 41.

The light emitting device 100 described above can be manufactured according to the following method. A light emitting structure 23 is grown on the substrate 21 and a part of the grown light emitting structure 23 is etched to form a mesa. Accordingly, the light emitting structure 23 may include one or more mesas, and the first conductive semiconductor layer 25, the active layer 27, and the second conductive semiconductor layer 29 may be exposed on the sides of the mesa . As described above, when the mesa is formed in the light emitting structure 23, the preliminary insulating layer 35a is formed to cover the top and side surfaces of the mesa.

Next, a part of the mesa top portion of the formed preliminary insulating layer 35a is etched and a second contact electrode 33 is formed on the second conductive type semiconductor layer 29 exposed through etching. In this state, the light emitting device 100 is formed on a chip-by-chip basis through the chip unit singulation process of the light emitting device 100 in the state that the second contact electrode 33 is formed, .

Here, a part of the substrate 21 may be exposed between the light emitting cells together with a part of the substrate 21 at the edge position of the light emitting device 100 by the chip unit singulation process, and a plurality of patterns The size of a part of the first electrode 21a can be reduced by the etching.

As described above, the first insulating layer 35 is formed to cover the entire upper surface of the light emitting device 100 divided into the plurality of light emitting cells and the light emitting structure 23 exposed to the mesa side surface, 35b). The first insulating layer 35 is formed to cover the opening formed in the mesa to expose the first conductive semiconductor layer 25. The first insulating layer 35 formed in the opening may be etched to form a first conductive type The first hole h1 is formed so that the semiconductor layer 25 is exposed. A part of the first insulating layer 35 covering the upper portion of the second contact electrode 33 is also etched to electrically connect the light emitting cell adjacent to the light emitting cell so that a part of the second contact electrode 33 is exposed The second hole h2 is formed.

The first contact electrode 31 is formed so as to cover the upper portion of the first insulating layer 35 formed with the first hole h1 and the second hole h2. The first contact electrode 31 may be formed over the entire area of the light emitting device 100 and may also be formed in a space between the light emitting cells so that light emitted from the light emitting structure 23 is incident on the first contact electrode 31 So that it can be reflected. The first contact electrode 31 of one of the plurality of light emitting cells may be formed to cover an upper portion of the adjacent light emitting cell so that adjacent light emitting cells may be electrically connected. Here, the first contact electrodes 31 formed in each of the plurality of light emitting cells are formed to be insulated from each other.

The second insulating layer 37 may be formed to cover the upper portion where the first contact electrode 31 is formed. The second insulating layer 37 may be formed to cover the entire light emitting device 100 including the first contact electrode 31. One of a plurality of light emitting cells included in the light emitting device 100 for forming the first electrode pad 39 and the second electrode pad 41 in the light emitting device 100 in the state where the second insulating layer 37 is formed The first contact electrode 31 is etched to expose the second insulating layer 37 of the first contact hole 31 to form the first opening op1. And the second contact electrode 33 is exposed to the other of the plurality of light emitting cells to form the second opening op1. Here, a plurality of first openings op1 and second openings op2 may be formed.

The first electrode pad 39 is formed on the second insulating layer 37 so as to make an ohmic contact with the exposed first contact electrode 31 while filling the first opening op1 thus formed, A second electrode pad 41 is formed on the second insulating layer 33 so as to make an ohmic contact with the second contact electrode 33 exposed.

If necessary, a heat-radiating pad may be formed between the first and second electrode pads 39 and 41 on the second insulating layer 37.

4 is a plan view showing a light emitting device according to another embodiment of the present invention.

Referring to FIG. 4, a light emitting device 100 according to another embodiment of the present invention includes first through fourth light emitting cells C1, C2, C3, and C4, first through third electrode connections D1, D2, and D3 A first electrode pad 39, and a second electrode pad 41. The first electrode pad 39 and the second electrode pad 41 are connected to each other. Other embodiments of the present invention will be described while omitting the description of the same configurations as those of the embodiment of the present invention.

As shown in the figure, the first through fourth light emitting cells C1, C2, C3 and C4 are arranged on the same plane and are electrically connected in series, and the first through fourth light emitting cells C1, C2, Are formed to have substantially the same area. The light emitting cells C1, C2, C3 and C4 are connected to the first to third electrode connection parts D1, D2 and D3 so as to connect the first to fourth light emitting cells C1, C2, C3 and C4 in series. Respectively.

In another embodiment of the present invention, the first to fourth light emitting cells C1, C2, C3, and C4 may be formed to be arranged in parallel in one direction.

4, the second light emitting cell C2 is disposed on the right side of the first light emitting cell C1 and electrically connected to the first light emitting cell C1 by the first electrode connecting portion D1 . The third light emitting cell C3 is disposed on the right side of the second light emitting cell C2 and electrically connected to the second light emitting cell C2 through the second electrode connecting portion D2. The fourth light emitting cell C4 is disposed on the right side of the third light emitting cell C3 and electrically connected by the third light emitting cell C3 and the third electrode connecting portion D3.

As described above, since the first to fourth light emitting cells C1, C2, C3, and C4 are formed, the light emitting cells C1, C2, C3, and C4 are electrically connected to each other in series, (100).

The first to third electrode connection parts D1, D2 and D3 are arranged on the second to fourth light emitting cells C2, C3 and C4, respectively. For this purpose, The light extinguished inside the light emitting device 100 can be minimized even if a space is formed between the light emitting cells.

In addition, the first to fourth light emitting cells C1, C2, C3 and C4 are formed to have a directionality in one direction in the other embodiment of the present invention, so that the first to third electrode connection parts D1, D2, And may be formed over one side of the light emitting cell. The first electrode connection part D1 is formed on the second light emitting cell C2 and is formed on one side adjacent to the first light emitting cell C1 and includes a plurality of first electrode connection parts D1, May be disposed apart from one side of the second light emitting cell C2. Accordingly, a current can flow through one side between the first light emitting cell C1 and the second light emitting cell C2.

The first electrode pad 39 is formed so as to cover all or a part of the upper portion of the third light emitting cell C3 and the fourth light emitting cell C4 while the second electrode pad 41 is formed to cover the first light emitting cell C1, And may cover the entire upper part or a part of the second light emitting cell C2. The first electrode pad 39 may be electrically connected to the fourth light emitting cell C4 and the second electrode pad 41 may be electrically connected to the first light emitting cell C1. At this time, the first electrode pad 39 and the second electrode pad 41 may be spaced apart from each other by a predetermined distance.

Alternatively, a heat dissipation pad may be provided between the first electrode pad 39 and the second electrode pad 41, if necessary, as shown in FIG. 4. At this time, the first electrode pad 39, The pads 41 and the heat radiation pads may be disposed apart from each other.

5 is a plan view illustrating a light emitting device according to another embodiment of the present invention.

5, a light emitting device according to another exemplary embodiment of the present invention includes first to eleventh light emitting cells C1 to C11, first to tenth electrode connecting portions D1 to D10, a first electrode pad 39 A second electrode pad 41, and a heat dissipation pad 43. The description of the same configuration as that of the embodiment of the present invention will be omitted while explaining another embodiment of the present invention.

In another embodiment of the present invention, eleven light emitting cells C1 to C11 are used, and the light emitting cells C1 to C11 are connected in series to each other. As shown in FIG. 5, the first to the eleventh light emitting cells C1 to C11 may be formed to have similar areas. In consideration of the arrangement, the first to fifth light emitting cells C1 to C5 have the same shape And the sixth to eleventh light emitting cells C6 to C11 may be formed to have the same rectangular shape as the first to fifth light emitting cells C1 to C5.

The arrangement of the first to eleventh light emitting cells C1 to C11 will be described. In the plan view of the drawing shown in FIG. 5, the first light emitting cells C1 are arranged on the upper right side, The second to fifth light emitting cells C2 to C5 are arranged in this order. The sixth light emitting cell C6 is disposed on the left side of the fifth light emitting cell C5 and the seventh and eighth light emitting cells C7 and C8 are disposed on the upper side of the sixth light emitting cell C6 in order . The ninth light emitting cell C9 is disposed on the left side of the eighth light emitting cell C8 and the tenth and eleventh light emitting cells C10 and C11 are arranged in order on the lower side of the ninth light emitting cell C9.

The first to tenth electrode connection parts D1 to D10 electrically connect the light emitting cells C1 to C11 to each other in a state where the first to eleventh light emitting cells C1 to C11 are sequentially arranged . Accordingly, the first to eleventh light emitting cells C1 to C11 are electrically connected to each other, and may be connected in series in another embodiment of the present invention.

In yet another embodiment of the present invention, the first to tenth electrode connection portions D1 to D10 are formed on the second to eleventh light emitting cells C2 to C11, respectively, and a plurality of the first to tenth electrode connection portions D1 to D10 may be formed. That is, in one embodiment of the present invention, the first to eleventh light emitting cells C1 to C11 are disposed adjacent to each other with one side corresponding to each other, so that each of the first to tenth electrode connecting portions D1 to D10, And may be disposed along one side of the eleventh light emitting cells C2 to C11.

The arrangement of the fifth light emitting cell C5 and the sixth light emitting cell C6 is such that one side of the fifth light emitting cell C5 and a part of one side of the sixth light emitting cell C6 are correspondingly arranged The fifth electrode connection part D5 is not formed on one side of the sixth light emitting cell C6 but is formed on one side of the sixth light emitting cell C6 corresponding to the fifth light emitting cell C5 .

The first electrode pad 39 is formed on the eleventh light emitting cell C11 and is electrically connected to the first contact electrode 31 of the eleventh light emitting cell C11. The second electrode pad 41 is formed on the first light emitting cell C1 and is electrically connected to the first contact electrode 31 of the first light emitting cell C1. Electrical connection between the first electrode pad 39 and the second electrode pad 41 and the 11th light emitting cell C11 and the first light emitting cell C1 is the same as in the embodiment of the present invention, It is omitted.

The heat dissipation pad 43 is disposed between the first and second electrode pads 39 and 41 while being spaced apart from the first electrode pad 39 and the second electrode pad 41. The heat dissipation pad 43 may be formed to cover a part or all of the first to fifth tenth light emitting cells C 1 to C 10 and the first to fifth light emitting cells C 11 and C 11.

6 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.

Referring to FIG. 6, the illumination device according to the present embodiment includes a diffusion cover 1010, a light emitting device module 1020, and a body part 1030. The body 1030 may receive the light emitting module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the light emitting module 1020.

The body part 1030 is not limited as long as it can receive and support the light emitting element module 1020 and supply the electric power to the light emitting element module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [

The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the light emitting device module 1020, and may include at least one IC chip. The IC chip may control, convert, or control the characteristics of the power supplied to the light emitting device module 1020. The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 . The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 115 may be electrically connected to the power supply unit 1033 in the power supply case 1035 and may serve as a path through which external power may be supplied to the power supply unit 1033. [

The light emitting element module 1020 includes a substrate 1023 and a light emitting element 1021 disposed on the substrate 1023. The light emitting device module 1020 is provided on the body case 1031 and can be electrically connected to the power supply device 1033.

The substrate 1023 is not limited as long as it is a substrate capable of supporting the light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [ The light emitting device 1021 may include at least one of the light emitting devices according to the embodiments of the present invention described above.

The diffusion cover 1010 is disposed on the light emitting element 1021 and may be fixed to the body case 1031 to cover the light emitting element 1021. [ The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.

7 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.

The display device of this embodiment includes a display panel 2110, a backlight unit BLU1 for providing light to the display panel 2110 and a panel guide 2100 for supporting the lower edge of the display panel 2110. [

The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCBs 2112 and 2113 are not formed on a separate PCB, but may be formed on a thin film transistor substrate.

The backlight unit (BLU1) includes a light source module including at least one substrate (2150) and a plurality of light emitting elements (2160). Further, the backlight unit BLU1 may further include a bottom cover 2180, a reflection sheet 2170, a diffusion plate 2131, and optical sheets 2130. [

The bottom cover 2180 is open at the top and can accommodate the substrate 2150, the light emitting element 2160, the reflection sheet 2170, the diffusion plate 2131 and the optical sheets 2130. In addition, the bottom cover 2180 can be engaged with the panel guide 2100. The substrate 2150 may be disposed under the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface. In addition, a plurality of substrates 2150 may be arranged so that a plurality of substrates 2150 are arranged side by side, but it is not limited thereto and may be formed as a single substrate 2150.

The light emitting device 2160 may include at least one of the light emitting devices according to the embodiments of the present invention described above. The light emitting elements 2160 may be regularly arranged on the substrate 2150 in a predetermined pattern. In addition, a lens 2210 is disposed on each light emitting element 2160, so that the uniformity of light emitted from the plurality of light emitting elements 2160 can be improved.

The diffusion plate 2131 and the optical sheets 2130 are placed on the light emitting element 2160. The light emitted from the light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.

8 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment is applied to a display device.

The display device having the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit BLU2 disposed on the back surface of the display panel 3210 to emit light. The display device further includes a frame 240 supporting the display panel 3210 and storing the backlight unit BLU2 and covers 3240 and 3280 surrounding the display panel 3210. [

The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate. The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit BLU2.

The backlight unit BLU2 for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the upper surface thereof, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 for converting the light into the plane light. The backlight unit BLU2 of the present embodiment is disposed on the light guide plate 3250 and includes optical sheets 3230 for diffusing and condensing light, a light guide plate 3250 disposed below the light guide plate 3250, And a reflective sheet 3260 that reflects the light toward the display panel 3210. [

The light source module includes a substrate 3220 and a plurality of light emitting devices 3110 disposed on a surface of the substrate 3220 at predetermined intervals. The substrate 3220 is not limited as long as it supports the light emitting element 3110 and is electrically connected to the light emitting element 3110, for example, it may be a printed circuit board. The light emitting device 3110 may include at least one light emitting device according to the embodiments of the present invention described above. The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. Through the light guide plate 3250 and the optical sheets 3230, the point light source emitted from the light emitting elements 3110 can be transformed into a surface light source.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the edge display device as in the present embodiment.

9 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

9, the head lamp includes a lamp body 4070, a substrate 4020, a light emitting element 4010, and a cover lens 4050. Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.

Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070. The substrate 4020 is not limited as long as it can support the light emitting element 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [ Also, the light emitting device 4010 may be electrically connected to an external power source through the conductive pattern of the substrate 4020. In addition, the light emitting device 4010 may include at least one light emitting device according to the embodiments of the present invention described above.

The cover lens 4050 is located on the path through which light emitted from the light emitting element 4010 travels. For example, as shown, the cover lens 4050 may be disposed apart from the light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is to be emitted from the light emitting device 4010 . The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted. The connection member 4040 may serve as a light guide for fixing the cover lens 4050 to the substrate 4020 and for arranging the light emitting element 4010 to provide the light emitting path 4045. [ At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate heat generated when the light emitting device 4010 is driven.

As described above, the light emitting device according to the embodiments of the present invention can be applied to a head lamp, particularly, a headlamp for a vehicle as in the present embodiment.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It should be understood that the scope of the present invention is to be understood as the scope of the following claims and their equivalents.

100: Light emitting element
21: Substrate 21a: Pattern
23: light emitting structure 25: first conductivity type semiconductor layer
27: active layer 29: second conductivity type semiconductor layer
31: first contact electrode 33: second contact electrode
35: first insulation layer 35a: preliminary insulation layer
35b: casting smelting layer 37: second insulating layer
39: first electrode pad 41: second electrode pad
h1: first hole h2: second hole
op1: first opening portion op2: second opening portion
C1 to C11: First to eleventh light emitting cells
D1 to D10: first to tenth electrode connecting portions

Claims (12)

A first light emitting cell;
A second light emitting cell disposed on the same plane as the first light emitting cell and electrically connected to the first light emitting cell; And
And a plurality of electrode connection parts electrically connecting the first light emitting cell and the second light emitting cell,
The plurality of electrode connection portions are disposed on the second light emitting cells to extend from the first light emitting cells to cover a portion of the upper portion of the second light emitting cells, Arranged. The method according to claim 1,
Wherein the first light emitting cell and the second light emitting cell are arranged such that one side of the first light emitting cell and the second light emitting cell are disposed adjacent to each other. The method of claim 2,
Wherein the plurality of electrode connection portions are disposed on one side of the second light emitting cell corresponding to one side of the first light emitting cell. The method according to claim 1,
Wherein the first light emitting cell and the second light emitting cell have planar shapes and are adjacent to each other at one corner,
Wherein the plurality of electrode connection portions extend over one side of the second light emitting cell in the first light emitting cell. The light emitting device of claim 1, wherein each of the first and second light emitting cells comprises:
A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first conductive semiconductor layer and the second conductive semiconductor layer, respectively;
And an insulating layer covering a part of the first contact electrode and the second contact electrode for insulation between the first contact electrode and the second contact electrode. 6. The semiconductor device according to claim 5,
A first insulating layer formed to cover the second contact electrode and including a first opening and a second opening for partially exposing the first conductive type semiconductor layer and the second contact, respectively; And
And a second insulating layer formed to cover the first contact electrode covering the first insulating layer and including a third opening and a fourth opening partially exposing the first contact electrode and the second contact electrode, Light emitting element. The semiconductor device according to claim 6,
A preliminary insulating layer covering a top surface or a part of a side surface of the light emitting structure; And
And a main insulating layer formed to cover the preliminary insulating layer and the second contact electrode. The method of claim 5,
Wherein the first contact electrode of the first light emitting cell extends to an upper portion of the light emitting structure of the second light emitting cell and is in ohmic contact with the second contact electrode. The method of claim 5,
And a mesa including the second conductivity type semiconductor layer and the active layer,
Wherein the first insulating layer comprises a preliminary insulating layer covering a top portion of the mesa. The method of claim 9,
And the second contact electrode is in ohmic contact with the second conductivity type semiconductor layer at an upper portion of the mesa. The method of claim 5,
Further comprising a substrate located below the light emitting structure,
Wherein the substrate has a plurality of patterns formed on an upper surface thereof. The method of claim 11,
Wherein a part of the plurality of patterns formed on the substrate is not covered by the light emitting structure but a portion thereof is smaller than the remaining part covered by the light emitting structure.
KR1020150073598A 2015-02-13 2015-05-27 Light emitting diode KR20160139182A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
KR1020150073598A KR20160139182A (en) 2015-05-27 2015-05-27 Light emitting diode
PCT/KR2016/001255 WO2016129873A2 (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201910175807.1A CN110061027B (en) 2015-02-13 2016-02-04 Light-emitting element
CN201910953376.7A CN110690242B (en) 2015-02-13 2016-02-04 Light-emitting element
CN201911070837.2A CN110854250B (en) 2015-02-13 2016-02-04 Light-emitting element
EP16749413.7A EP3258507A2 (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201911037711.5A CN110676286B (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201680010257.2A CN107223285B (en) 2015-02-13 2016-02-04 Light emitting element and light emitting diode
DE112016000731.0T DE112016000731T5 (en) 2015-02-13 2016-02-04 LIGHT OUTDOOR ELEMENT AND LUMINAIRE DIODE
CN201911073767.6A CN110690249B (en) 2015-02-13 2016-02-04 Light-emitting element
CN201911074035.9A CN110690250A (en) 2015-02-13 2016-02-04 Light emitting element and light emitting diode
US15/409,306 US10438992B2 (en) 2015-02-13 2017-01-18 Light-emitting element and light-emitting diode
US16/594,239 US11282892B2 (en) 2015-02-13 2019-10-07 Light-emitting element including intermediate connection and branches
US17/697,410 US20220208851A1 (en) 2015-02-13 2022-03-17 Light-emitting element and light-emitting diode

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