KR101746818B1 - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR101746818B1
KR101746818B1 KR1020150188369A KR20150188369A KR101746818B1 KR 101746818 B1 KR101746818 B1 KR 101746818B1 KR 1020150188369 A KR1020150188369 A KR 1020150188369A KR 20150188369 A KR20150188369 A KR 20150188369A KR 101746818 B1 KR101746818 B1 KR 101746818B1
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South Korea
Prior art keywords
electrode
light emitting
contact
semiconductor layer
groove
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KR1020150188369A
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Korean (ko)
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오세종
채종현
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서울바이오시스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and including at least one groove; A contact electrode comprising a light-transmitting conductive oxide; A light-reflective first insulating layer including a plurality of first and second openings exposing the contact electrode and a fourth opening exposing the first conductive type semiconductor layer exposed in the groove; A first electrode that makes an ohmic contact with the first conductivity type semiconductor layer through the fourth opening; A second electrode electrically connected to the contact electrode through the first and second openings; A second insulating layer; A first pad electrode; And a second pad electrode, wherein the plurality of first openings are located below the first pad electrode, the plurality of second openings are located below the second pad electrode, and the average distance of the first openings is smaller than the average distance of the second openings Is greater than the average separation distance.

Description

[0001] LIGHT EMITTING DEVICE [0002]

The present invention relates to a light emitting device, and more particularly to a light emitting device having improved current dispersion efficiency and light reflection efficiency.

Recently, there is an increasing demand for small size high power light emitting devices, and demand for large area flip chip type light emitting diodes with high heat dissipation efficiency applicable to high power light emitting devices is increasing. Since the electrode of the flip chip type light emitting device is directly bonded to the secondary substrate and the wire for supplying external power to the flip chip type light emitting device is not used, the heat emission efficiency is much higher than that of the horizontal type light emitting device. Therefore, even when a high-density current is applied, the heat can be effectively conducted to the secondary substrate side, so that the flip chip type light emitting device is suitable as the light emitting source of the high output light emitting device.

In the light emitting device, the current concentration may cause deterioration of the device in which the current is concentrated, unevenness of the emission pattern, and deterioration of the electron hole recombination efficiency due to current concentration. Such current concentration, that is, deterioration of the current dispersion efficiency, may deteriorate the reliability and lifetime of the light emitting device, resulting in a decrease in luminous efficiency. Further, the forward voltage and the luminous efficiency may be decreased or increased due to the contact characteristics between the semiconductor layer of the light emitting device and the electrode, that is, the contact resistance.

Such contact characteristics and current dispersion efficiency have a greater influence on a high-output, large-area light emitting device. Therefore, in order to realize a light emitting device driven with high efficiency at a high current, a light emitting device having an optimal structure is required in consideration of electrical characteristics and optical characteristics.

A problem to be solved by the present invention is to provide a light emitting device having an excellent electrical contact property between a second conductivity type semiconductor layer and a contact electrode, an improved current dispersion efficiency, and an improved optical characteristic.

A light emitting device according to an aspect of the present invention includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed between the first and second conductive semiconductor layers A light emitting structure including at least one groove for partially exposing the first conductivity type semiconductor layer; A contact electrode at least partially located on the second conductivity type semiconductor layer, the contact electrode comprising a light-transmitting conductive oxide that is in ohmic contact with the second conductivity type semiconductor layer; And a fourth opening exposing the first conductive type semiconductor layer exposed in the groove, the first and second openings covering the light emitting structure and the contact electrode, the first and second openings exposing the contact electrode, 1 insulating layer; A first electrode located on the at least one groove and making an ohmic contact with the first conductive semiconductor layer through the fourth opening; A second electrode located on the first insulating layer and electrically connected to the contact electrode through the first and second openings; A second insulating layer covering the first and second electrodes and including a fifth opening partially exposing the first electrode and a sixth opening partially exposing the second electrode; A first pad electrode located on the second insulating layer and electrically in contact with the first electrode through the fifth opening; And a second pad electrode located on the second insulating layer and in electrical contact with the second electrode through the sixth opening, the plurality of first openings being located under the first pad electrode The plurality of second openings are located below the second pad electrode, and the average distance of the first openings is larger than the average distance of the second openings.

According to embodiments, the contact characteristics between the contact electrode and the second conductivity type semiconductor layer can be improved to improve the electrical characteristics of the light emitting device, and the first insulating layer having the light reflectivity can cover the contact electrode almost entirely, And the contact electrode formed of the conductive oxide is superior to the metallic electrode in bonding properties with the nitride semiconductor so that the increase of the forward voltage of the light emitting device and deterioration of the current dispersion efficiency due to the peeling of the contact electrode can be prevented, The reliability of the light emitting device can be improved, and the decrease in the light emission efficiency can be prevented.

Further, by controlling the spacing distance and arrangement position between the openings through which the first insulating layer exposes the contact electrodes, it is possible to improve the current dispersion efficiency and improve the luminous efficiency and lifetime of the light emitting device.

1 to 5 are plan views illustrating a light emitting device according to embodiments of the present invention.
6 to 8 are cross-sectional views illustrating a light emitting device according to embodiments of the present invention.
9 is a cross-sectional view illustrating a light emitting device according to various embodiments of the present invention.
10 is a plan view illustrating a light emitting device according to various embodiments of the present invention.
11 is a plan view illustrating a light emitting device according to various embodiments of the present invention.
12 is a plan view illustrating a light emitting device according to various embodiments of the present invention.
13A and 13B are a partial plan view and a partial cross-sectional view for illustrating a light emitting device according to various other embodiments of the present invention.
14A and 14B are a partial plan view and a partial cross-sectional view for explaining a light emitting device according to various other embodiments of the present invention.
15A and 15B are a partial plan view and a partial cross-sectional view for explaining a light emitting device according to various other embodiments of the present invention.
16 is a partial cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.
17 is a partial cross-sectional view illustrating a light emitting device according to still another embodiment of the present invention.
18 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting apparatus.
19 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
20 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
21 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

The light emitting device and the light emitting device manufacturing method according to embodiments of the present invention can be implemented in various aspects.

The light emitting device according to various embodiments of the present invention includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the first conductive semiconductor layer, A light emitting structure including an active layer disposed between the first conductive semiconductor layer and the first conductive semiconductor layer and partially exposing the first conductive semiconductor layer; A contact electrode at least partially located on the second conductivity type semiconductor layer, the contact electrode comprising a light-transmitting conductive oxide that is in ohmic contact with the second conductivity type semiconductor layer; And a fourth opening exposing the first conductive type semiconductor layer exposed in the groove, the first and second openings covering the light emitting structure and the contact electrode, the first and second openings exposing the contact electrode, 1 insulating layer; A first electrode located on the at least one groove and making an ohmic contact with the first conductive semiconductor layer through the fourth opening; A second electrode located on the first insulating layer and electrically connected to the contact electrode through the first and second openings; A second insulating layer covering the first and second electrodes and including a fifth opening partially exposing the first electrode and a sixth opening partially exposing the second electrode; A first pad electrode located on the second insulating layer and electrically in contact with the first electrode through the fifth opening; And a second pad electrode located on the second insulating layer and in electrical contact with the second electrode through the sixth opening, the plurality of first openings being located under the first pad electrode The plurality of second openings are located below the second pad electrode, and the average distance of the first openings is larger than the average distance of the second openings.

The first electrode may include a first ohmic contact electrode located under the first pad electrode, and at least a portion of the first ohmic contact electrode may be located between the first openings.

The first electrode may include a second ohmic contact electrode extending in a direction from the first ohmic contact electrode toward the second pad electrode and at least a part of the second ohmic contact electrode being located under the space between the first and second pad electrodes .

The first ohmic contact electrode may include a main electrode, and at least a portion of the main electrode may be exposed to the fifth opening to contact the first pad electrode.

The first ohmic contact electrode may include a plurality of main electrodes and a sub electrode connecting the plurality of main electrodes and having a line width narrower than the main electrode, and the sub electrode may be covered with the second insulating layer .

The first electrode may have a shape extending from the first pad electrode toward the second pad electrode, and at least a part of the first openings may be a line extending along the direction in which the first electrode extends, As shown in FIG.

Wherein a shortest distance from a region where the contact electrode and the second electrode are in contact through the first opening to an outer side face of the active layer is a distance from a region where the contact electrode and the second electrode are in contact through the first opening, May be shorter than the shortest distance to the region where the first electrode and the first conductivity type semiconductor layer are in ohmic contact.

The first insulating layer may further include a third opening positioned below a space between the first pad electrode and the second pad electrode.

The at least one groove may have a shape that is recessed from a side surface of the light emitting structure and extends in a direction from the first pad electrode toward the second pad electrode.

The at least one groove may include a plurality of first grooves and a second groove connecting the plurality of first grooves and having a width smaller than the first groove, And may be positioned below the first pad electrode.

The at least one groove may further include a third groove extending from the first groove and having a width smaller than that of the first groove and at least a part of the third groove may be formed on the first and second pad electrodes And can be located at the bottom of the space between them.

The light emitting structure may include a plurality of grooves and at least two of the plurality of grooves may be arranged symmetrically with respect to any line located therebetween.

The at least one groove may include at least one hole penetrating the second conductive type semiconductor layer and the active layer.

The at least one hole may include a first hole located below the first pad electrode and a second hole extending from the first hole toward the second pad electrode.

The contact electrode may cover 90% or more of the upper surface of the second conductive type semiconductor layer.

The second electrode may be located on an outer edge region of the contact electrode.

The light emitting device may further include a current blocking layer interposed between the contact electrode and the second conductive type semiconductor layer, the current blocking layer being located under the contact area between the contact electrode and the second electrode.

The contact electrode may include a seventh opening located in at least one of the first and second openings and exposing the second conductive type semiconductor layer.

The light emitting device may further include a supporting electrode located under at least one of the first and second openings and interposed between the second electrode and the contact electrode.

The first insulating layer may comprise a distributed Bragg reflector, and the second insulating layer may comprise SiN x .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.

FIGS. 1 to 5 are plan views illustrating a light emitting device according to embodiments of the present invention, and FIGS. 6 to 8 are cross-sectional views illustrating a light emitting device according to embodiments of the present invention.

2 is a plan view showing the first and second pad electrodes 181 and 183 and the second insulating layer 170 omitted for convenience of explanation. FIG. 3 is a plan view illustrating the first and second pad electrodes 181 and 183, the second insulating layer 170, the first electrode 150, and the second electrode 160, The first electrode 150 and the second electrode 160 are formed on the first insulating layer 170 and the second insulating layer 170. The first and second pad electrodes 181 and 183, the second insulating layer 170, the first electrode 150, 140 are omitted. 5 is a plan view for explaining the arrangement relationship among the configurations for convenience of explanation.

6 is a cross-sectional view showing a section corresponding to the line A-A 'in the plan views of FIGS. 1 to 4, and FIG. 7 is a cross-sectional view of the portion corresponding to the line B-B' Fig. 8 is a cross-sectional view showing a section of a portion corresponding to line C-C 'in plan views of FIGS. 1 to 4. FIG.

1 to 8, the light emitting device includes a light emitting structure 120, a contact electrode 130, a first insulating layer 140, a first electrode 150, and a second electrode 160. The light emitting device may further include at least one of a second insulating layer 170, a first pad electrode 181, a second pad electrode 183, a current blocking layer 190, and a supporting electrode 165 have. In addition, the light emitting device may have a rectangular planar shape. In this embodiment, the light emitting device may have a generally rectangular planar shape and may have a first side 101, a second side 102, a third side 103 located opposite the first side 101, And a fourth side 104 that is opposite the second side 102. The second side 102 may include a first side 104, However, the present invention is not limited thereto.

The substrate 110 is not limited as long as it can grow the light emitting structure 120 and may be, for example, a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. In this embodiment, the substrate 110 may be a patterned sapphire substrate (PSS). In the light emitting device, the substrate 110 may be omitted. When the substrate 110 is used as a growth substrate of the light emitting structure, the substrate 110 can be separated and removed from the light emitting structure 120 using a known technique. In addition, the substrate 110 may be a supporting substrate for supporting the light emitting structure 120 grown on a separate growth substrate.

The light emitting structure 120 includes a first conductivity type semiconductor layer 121, an active layer 123 located on the first conductivity type semiconductor layer 121, and a second conductivity type semiconductor layer 125). The first conductivity type semiconductor layer 121, the active layer 123 and the second conductivity type semiconductor layer 125 may include a III-V compound semiconductor, for example, (Al, Ga, In) N, And may include the same nitride-based semiconductor. The first conductivity type semiconductor layer 121 may include an n-type impurity (for example, Si) and the second conductivity type semiconductor layer 125 may include a p-type impurity (for example, Mg) have. It may also be the opposite. The active layer 123 may comprise a multiple quantum well structure (MQW). In particular, in this embodiment, the second conductivity type semiconductor layer 125 may be a p-type semiconductor layer.

The light emitting structure 120 may include a region through which the first conductivity type semiconductor layer 121 is partially exposed through the second conductivity type semiconductor layer 125 and the active layer 123. The light emitting structure 120 may include at least one groove 120g through the second conductive semiconductor layer 125 and the active layer 123 to expose a portion of the first conductive semiconductor layer 121, . ≪ / RTI >

Of the light emitting structure 120 groove (120g) may include at least one first groove (120g. 1) having a relatively large width. Further, when the groove 120g includes a plurality of first grooves 120g 1 , the groove 120g connects at least two of the plurality of first grooves 120g 1 to each other and has a relatively small width a second groove having may include (120g 2). Further, the groove (120g) may further include a third recess (120g 3) extending from the at least one first groove (120g 1). The position of the at least one groove 120g is not limited, but at least a part of the at least one groove 120g may be located under the first pad electrode 181. [ The first conductive semiconductor layer 121 exposed in the at least one groove 120g may be electrically connected to the first pad electrode 181. For example, at least a portion of the first electrode 150 may be electrically connected to the groove 120g and the first pad electrode 181 to form an electrical connection.

3 to 7, a plurality of grooves 120g may be formed, and a plurality of grooves 120g may be formed on one surface of the light emitting structure 120 from one side of the light emitting structure 120. In other words, And may be formed into a shape indented inside. As shown, the plurality of grooves 120g may be formed in a shape that is depressed from the first side face 101 and extends in the direction toward the third side face 103. [ Also, at least one groove 120g of the plurality of grooves 120g may include a plurality of first grooves 120g 1 , and the plurality of first grooves 120g 1 may have a shape extending long 2 grooves 120g 2 . At this time, the second groove 120g 2 may have a smaller line width than the first groove 120g 1 . The plurality of first grooves 120g 1 may be located below the first pad electrode 181 and may be disposed in a region overlapping the first pad electrode 181 vertically. Accordingly, the second grooves 120g 2 may also be arranged in a region overlapping with the first pad electrode 181 vertically.

In addition, at least one groove (120g) may include a third recess (120g 3) extending from the first groove (120g 1). The distance from the third groove 120g 3 to the second pad electrode 183 may be shorter than the distance from the first groove 120g 1 to the second pad electrode 183. At least a part of the third groove 120g 3 may be located under the space between the first pad electrode 181 and the second pad electrode 183. A region where the first conductivity type semiconductor layer 121 is exposed is provided under the space between the first pad electrode 181 and the second pad electrode 183 by the third groove 120g 3 , The current dispersion efficiency can be improved.

The shapes of the first to third grooves 120g 1 , 120g 2 , and 120g 3 are not limited. For example, the first groove 120g 1 may have a generally circular or polygonal planar shape. The second grooves 120g 2 and the third grooves 120g 3 may have substantially the same line width and different line widths. In addition, the line widths of the second groove 120g 2 and the third groove 120g 3 may be constant or vary.

In some embodiments, the light emitting structure 120 may include a mesa 120m that includes a second conductive semiconductor layer 125 and an active layer 123. In some embodiments, The mesa 120m may be located on the first conductivity type semiconductor layer 121. In this embodiment, a region where the active layer 123 is formed may be formed of a mesa 120m, in addition to a portion where the first conductive semiconductor layer 121 is exposed by the groove 120g. In addition, the first conductivity type semiconductor layer 121 may be partially exposed at least partially around the mesa 120m side. The light emitting structure 120 of this embodiment can include a single mesa 120m, and therefore, the light emitting region (region where the active layer 123 is formed) is also formed singly, so that the current dispersion efficiency can be improved. However, the present invention is not limited thereto, and the light emitting structure 120 may include a region where the first conductivity type semiconductor layer 121 is exposed by the at least one groove 120g without including the mesa 120m. can do.

The contact electrode 130 is located on the second conductive type semiconductor layer 125. The contact electrode 130 may be in ohmic contact with the second conductivity type semiconductor layer 125. The contact electrode 130 may include a transparent electrode. For example, the transparent electrode may be formed of indium tin oxide (ITO), zinc oxide (ZnO), zinc tin oxide (ZITO), zinc tin oxide (ZTO), gallium indium tin oxide (GITO) , A light transmitting conductive oxide such as GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum Doped Zinc Oxide), FTO (Fluorine Tin Oxide) and the like and a light transmitting metal layer such as Ni / Au It is possible. The conductive oxide may further include various dopants.

In particular, the contact electrode 130 including the light-transmitting conductive oxide has high ohmic contact efficiency with the second conductivity type semiconductor layer 125. That is, the contact resistance between the conductive oxide such as ITO or ZnO and the second conductive type semiconductor layer 125 is lower than the contact resistance with the second conductive type semiconductor layer 125 with the metallic electrode, By applying the electrode 130, the forward voltage V f of the light emitting device can be reduced to improve the luminous efficiency. In particular, when the light emitting device of this embodiment is driven at a high current, the contact resistance between the contact electrode 130 and the second conductivity type semiconductor layer 125 is lowered to improve the ohmic characteristics, Can be minimized. In addition, since the conductive oxide is less likely to be peeled from the nitride-based semiconductor layer than the metallic electrode (since the bonding property is excellent), it is possible to prevent increase of the forward voltage and deterioration of current dispersion efficiency due to peeling of the contact electrode 130 .

Although the thickness of the contact electrode 130 is not limited, for example, the contact electrode 130 including ITO may have a thickness of about 1 to 5000 ANGSTROM to have a light transmittance of about 90% or more. In addition, when the contact electrode 130 includes ZnO, the contact electrode 130 may have a thickness of about 1 nm to 10 占 퐉 so as to have a light transmittance of about 90% or more.

The contact electrode 130 may be formed to cover the upper surface of the second conductivity type semiconductor layer 125 as a whole. For example, the side surfaces of the contact electrode 130 may be formed along the outer side surfaces of the second conductive type semiconductor layer 125. The contact electrode 130 may be formed to cover at least 80% of the upper surface of the second conductive type semiconductor layer 125, and more than 90% of the upper surface thereof. Accordingly, it is possible to improve the current dispersion efficiency when driving the light emitting element.

The first insulating layer 140 covers the upper surface and side surfaces of the light emitting structure 120 and also covers the contact electrodes 130. The first insulating layer 140 may extend to the upper surface of the substrate 110 exposed to the periphery of the light emitting structure 120. Accordingly, the first insulating layer 140 can be in contact with the upper surface of the substrate 110, so that the first insulating layer 140 covering the side surface of the light emitting structure 120 can be more stably disposed. The first insulating layer 140 may have light reflective properties. The first insulating layer 140 includes first and second openings 141 and 143 partially exposing the contact electrode 130 and a first conductive semiconductor layer 121 exposed in the at least one groove 120g. And a fourth opening 147 partially exposing the second opening 147. [ Furthermore, the first insulating layer 140 may further include a third opening 145.

The first to third openings 141, 143 and 145 of the first insulating layer 140 expose the contact electrodes 130. The first opening 141 is positioned below the first pad electrode 181 and the second opening 143 is located below the second pad electrode 183. [ The third opening 145 may be located under the space between the first and second pad electrodes 181 and 183. Each of the first to third openings 141, 143, and 145 may be formed in a plurality of holes, and their shapes are not limited. The first to third openings 141, 143, and 145 may be disposed such that the first to third openings 141, 143, and 145 have a predetermined distance. When the separation distance of the first openings 141 is defined as D1 and the separation distance of the second openings 143 is defined as D2, the average value of D1 is larger than the average value of D2. That is, the average spacing distance of the first openings 141 may be larger than the average spacing distance of the second openings 143. The spacing between the first, second, and third openings 141, 143, and 145 may be 200 탆 or less, for example, 130 탆 to 150 탆.

By controlling the spacing distance of the first to third openings 141, 143, and 145 and the positions where the first to third openings 141, 143, and 145 are disposed as described above, The current distribution efficiency can be improved and current density can be minimized. This will be described in more detail later.

The fourth opening 147 of the first insulating layer 140 at least partially exposes the first conductivity type semiconductor layer 121 exposed in the at least one groove 120g. At this time, the side surface of the groove 120g is covered with the first insulating layer 140, and electrical short-circuiting is prevented. The fourth opening 147 may be used as a path for allowing electrical connection between the first conductive semiconductor layer 121 and the first pad electrode 181. The fourth openings 147 may be formed to substantially correspond to the shapes of the grooves 120g and may be formed in the first through third grooves 120g 1 , 120g 2 , 120g 3 through the fourth openings 147, The first conductive type semiconductor layer 121 exposed to each of the first conductive type semiconductor layers 121 may be at least partially exposed. In some embodiments, the fourth opening 147 may expose only a portion of the groove 120g, for example, the first groove 120g 1 may be exposed by the fourth opening 147, The three grooves 120g 2 and 120g 3 may be covered with the first insulating layer 140.

The first insulating layer 140 may include a distributed Bragg reflector. The distributed Bragg reflector may be formed by repeatedly stacking dielectric layers having different refractive indices. For example, the dielectric layers may include TiO 2 , SiO 2 , HfO 2 , ZrO 2 , Nb 2 O 5 , MgF 2 , and the like. In some embodiments, the first insulating layer 140 may have a structure of an alternately stacked TiO 2 layer / SiO 2 layer. Each layer of the distributed Bragg reflector may have an optical thickness of 1/4 of a particular wavelength and may be formed of 4 to 40 pairs. The uppermost layer of the first insulating layer 140 may be formed of SiN x . The layer formed of SiN x is excellent in moisture-proof property and can protect the light emitting diode chip from moisture.

When the first insulating layer 140 includes a distributed Bragg reflector, the lowermost layer of the first insulating layer 140 may serve as a base layer or an interface layer capable of improving the film quality of the distributed Bragg reflector. For example, the first insulating layer 140 may include a stacked structure of dielectric layers having different relative refractive indexes located on the interface layer and the interface layer having a relatively thick thickness. For example, the first insulating layer 140 may include a laminate structure in which an interface layer formed of SiO 2 having a thickness of about 0.2 μm to 1.0 μm and a TiO 2 layer / SiO 2 layer are repeatedly stacked on the interface layer at predetermined intervals .

The distributed Bragg reflector may have a reflectivity for relatively high visible light. The distributed Bragg reflector may be designed to have a reflectance of 90% or more with respect to light having an incident angle of 0 to 60 ° and a wavelength of 400 to 700 nm. The above-described distributed Bragg reflector having reflectance can be provided by controlling the type, thickness, stacking period, etc. of a plurality of dielectric layers forming the distributed Bragg reflector. Thus, it is possible to form a distributed Bragg reflector having a high reflectance for light of a relatively long wavelength (for example, 550 nm to 700 nm) and light of a relatively short wavelength (for example, 400 nm to 550 nm).

As such, the distributed Bragg reflector may include multiple laminate structures such that the distributed Bragg reflector has a high reflectance for light of a broad wavelength band. That is, the distributed Bragg reflector may include a first lamination structure in which dielectric layers having a first thickness are laminated, and a second lamination structure in which dielectric layers having a second thickness are laminated. For example, the distributed Bragg reflector has a first laminated structure in which dielectric layers having a thickness smaller than 1/4 of the optical thickness with respect to light having a center wavelength of visible light (about 550 nm) are laminated, and a first laminated structure having a center wavelength (about 550 nm) Lt; RTI ID = 0.0 > 1/4 < / RTI > optical thickness with respect to the light of the second layer stack. Furthermore, the above-mentioned distributed Bragg reflector has a dielectric layer having a thickness greater than 1/4 of the optical thickness with respect to light having a center wavelength (about 550 nm) of visible light and a dielectric layer having a thickness smaller than 1/4 of the optical thickness And may further include a third stacked structure repeatedly stacked.

The light passing through the contact electrode 130 by the first insulating layer 140 may be reflected to the lower portion of the first conductivity type semiconductor layer 121 to improve the luminous efficiency of the light emitting device. In particular, the first insulation layer 140 using the distributed Bragg reflector can have a reflection efficiency close to 100% as compared with the metallic reflection material, and thus the luminous efficiency can be further improved.

The first electrode 150 may be electrically connected to the first conductivity type semiconductor layer 121 and further may be in ohmic contact with the first conductivity type semiconductor layer 121. The first electrode 150 may be located on at least a portion of the groove 120g. The first electrode 150 may be formed to at least partially fill the fourth opening 147 of the first insulating layer 140 and may be electrically connected to the first conductive semiconductor layer 121. The first electrode 150 may include a metallic material or may be formed of a metallic material such as Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag, Cr, can do.

The first electrode 150 may include a first ohmic contact electrode 151 and a second ohmic contact electrode 153 including a main electrode 151a and a sub electrode 151b. The main electrode 151a, the sub electrode 151b and the second ohmic contact electrode 153 can be located on the first groove 120g 1 , the second groove 120g 2 and the third groove 120g 3, respectively have. The first ohmic contact electrode 151 may be located under the first pad electrode 181 and at least a portion of the first ohmic contact electrode 151 may be in contact with the first pad electrode 181. The second ohmic contact electrode 153 may extend from the first ohmic contact electrode 151 and extend in the direction toward the second pad electrode 183 and at least a portion of the second ohmic contact electrode 153 may extend And may be located under the space between the first and second pad electrodes 181 and 183.

The width of the main electrode 151a may be greater than the width of the sub-electrode 151b or the second ohmic contact electrode 153. [ The main electrode 151a may be a main electrode that contacts the first pad electrode 181 and injects a current into the first conductive type semiconductor layer 121. [ However, the present invention is not limited thereto. The second ohmic contact electrode 153 may be formed to extend along the direction in which the third groove 120g 3 extends. The second ohmic contact electrode 153 may extend from the main electrode 151a and extend in the direction from the first side face 101 toward the third side face 103. In this embodiment, Accordingly, the main electrode 153a may be in contact with the first pad electrode 181, and the second ohmic contact electrode 153 may extend in the second pad electrode 183 side. In some embodiments, the second ohmic contact electrode 153 may extend further to the bottom of the second pad 183.

Electrons injected through the main electrode 153a in contact with the first pad electrode 181 can be easily dispersed into the region around the second pad electrode 183 through the second ohmic contact electrode 153 have. Therefore, concentration of current in the first conductive type semiconductor layer 121 located under the main electrode 153a is mitigated, and the current dispersion efficiency can be improved. The main electrode 153a is in contact with the first pad electrode 181 and the sub electrode 151b is separated from the first pad electrode 181 so that the sub electrode 151b functions as a current dispersion path, It is possible to prevent the current from concentrating only on the ohmic contact electrode 151.

The first electrode 150 may be formed to cover the side surface of the second conductive type semiconductor layer 125 and further may be formed on the upper surface of the second conductive type semiconductor layer 125 Or may be extended. As shown in FIG. 9, a first insulating layer 140 may be interposed between the first electrode 150 and the side surfaces of the second conductive type semiconductor layer 125. A first insulating layer 140 may be interposed between the first electrode 150 and the upper surface of the second conductive type semiconductor layer 125. The first insulating layer 140 may be interposed between the first electrode 150 and the second conductive type semiconductor layer 125, The first insulating layer 140 and the contact electrode 130 may be interposed between the upper surfaces of the first insulating layer 125 and the second insulating layer 140. In this case, since the area of the first electrode 150 that is in contact with the first insulating layer 140 is relatively large, the first electrode 150 is stably formed and the peeling of the first electrode 150 is effectively prevented And it is possible to prevent the deterioration of the electrical characteristics due to the peeling of the first electrode 150.

Referring again to FIGS. 1 to 8, the second electrode 160 is positioned on the contact electrode 130 and electrically connected to the contact electrode 130. The second electrode 160 covers the upper surface of the contact electrode 130 and contacts the contact electrode 130 through the first to third openings 141, 143, and 145 of the first insulating layer 140. / RTI > The second electrode 160 may include a metallic material or may be formed of a metallic material such as Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag, Cr, can do.

The second electrode 160 may have a smaller area than the contact electrode 130 so that a part of the upper surface of the contact electrode 130 may be exposed without being covered with the second electrode 160. 5, the substrate 110, the first conductivity type semiconductor layer 121, the second conductivity type semiconductor layer 125, the contact electrode 130, and the second electrode 160 may be formed as shown in FIG. Can have a placement relationship. However, the present invention is not limited thereto.

A current is injected into the contact electrode 130 through a region where the second electrode 160 and the contact electrode 130 are in contact with each other. Accordingly, the current injected into the second electrode 160 can be smoothly dispersed in the horizontal direction through the second electrode 160, and the current can flow smoothly through the first to third openings 141, 143, ). Therefore, the average distance (corresponding to the average value of D1) of the regions where the second electrode 160 and the contact electrode 130 are in contact with each other is lower than that of the second pad electrode 181 (Corresponding to the average value of D2) of the regions where the second electrode 160 located at the bottom and the contact electrode 130 are in contact with each other.

The current injection through the region where the second electrode 160 and the contact electrode 130 are in contact is made more denser than the lower region of the first pad electrode 181 in the lower region of the second pad electrode 183 . When driving the light emitting device, electrons are injected into a region where the first electrode 150 and the first conductivity type semiconductor layer 121 are in contact with each other, and the second electrode 160 and the contact electrode 130 are in contact with each other It passes. Accordingly, the average distance of the first groove 120g 1 located at the lower portion of the first pad electrode 181, which is located relatively close to the first electrode 150, is relatively increased, The current spreading efficiency over the entire light emitting region can be improved by making the average spacing distance of the second grooves 120g 2 located under the second pad electrode 183 relatively small, The light emission pattern can be made uniform over the entire light emitting region.

The spacing between the first, second, and third openings 141, 143, and 145 may be 200 탆 or less, for example, 130 탆 to 150 탆. The spacing distance between the second electrode 160 and the contact electrode 130 corresponds to the distance between the first to third openings 141, 143 and 145. The first to third openings 141, 143, 145 can be controlled in the above-described range to optimize the current dispersion efficiency.

The first electrode 150 and the first conductivity type semiconductor layer 121 are in contact with each other from a region where the second electrode 160 and the contact electrode 130 are in contact with each other through the first opening 141 The shortest distance to the region may be larger than the shortest distance from the region where the second electrode 160 and the contact electrode 130 are in contact through the first opening 141 to the outer side face of the light emitting region (the active layer 123) . That is, by forming the first opening 141 closer to the outer side surface of the light emitting region than the region where the first electrode 150 and the first conductive type semiconductor layer 121 are in contact with each other, It can be evenly dispersed. As a result, the current can be uniformly dispersed throughout the light emitting region and the light emitting pattern can be uniformly formed.

In addition, a part of the groove 120g may be disposed between the first openings 141. [ Accordingly, a part of the first electrode 150 may be disposed between the areas where the contact electrode 130 and the second electrode 160 contact with each other through the first opening 141. In some embodiments, at least some of the first openings 141 may be arranged to be symmetrical with respect to a groove 120g extending from the first side 101 to the third side 103. By arranging the first openings 141 symmetrically with respect to the grooves 120g, the current can be more uniformly dispersed.

The second insulating layer 170 covers the first electrode 150, the second electrode 160, the contact electrode 130 and the first insulating layer 140. The second insulating layer 170 covers the first electrode 150, 5 opening 171, and a sixth opening 173 that partially exposes the second electrode 160. [0064] The fifth opening 171 partially exposes the first electrode 150 and may expose the main electrode 151a of the first electrode 150 in particular. The sixth opening 173 exposes a portion of the second electrode 160, but may be located adjacent to the third side 103.

The second insulating layer 170 provides openings 171 and 173 for allowing electrical connection between the first and second pad electrodes 181 and 183 and the first and second electrodes 150 and 160, And may be formed for electrical insulation between the first electrode pad 181 and the second electrode 160. The second insulating layer 170 may include an insulating material, for example, SiO 2 , SiN x , MgF 2, or the like. When the second insulating layer 170 is formed of SiN x , moisture resistance of the light emitting element can be improved. In some embodiments, the second insulating layer 170 may comprise a distributed Bragg reflector. The distributed Bragg reflector may be formed by repeatedly stacking dielectric layers having different refractive indexes, and the dielectric layers may include TiO 2 , SiO 2 , HfO 2 , ZrO 2 , Nb 2 O 5 , MgF 2 , and the like.

The first pad electrode 181 and the second pad electrode 183 are electrically connected to the first electrode 150 and the second electrode 160, respectively. The first and second pad electrodes 181 and 183 may be located on the second insulating layer 170. The first pad electrode 181 may be in contact with the first electrode 150 through the fifth opening 171 and the second pad electrode 183 may be in contact with the second electrode 160 through the sixth opening 173. [ As shown in FIG.

The first pad electrode 181 may be located on the first openings 141 and the second pad electrode 183 may be located on the second openings 143. [ The first pad electrode 181 may be in contact with the main electrode 151a of the first electrode 150 and in some embodiments the first pad electrode 181 may be in contact with the sub- And may be insulated by the contact electrode 153 and the second insulating layer 170. Electrons injected through the first pad electrode 181 flow into the first electrode 150 through the main electrode 151a and the electrons flow into the sub electrode 151b and the second ohmic contact electrode 153).

The first pad electrode 181 and the second pad electrode 183 may be formed of a conductive material, a metallic material, or a metallic material, respectively. For example, the metallic material may include Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag, The first pad electrode 181 and the second pad electrode 183 may be formed of a single layer or multiple layers and the first pad electrode 181 and the second pad electrode 183 may have a thickness of several μm to several tens of μm However, the present invention is not limited thereto.

According to the above-described embodiments, a light emitting device including a contact electrode 130 formed of a conductive oxide may be provided. In this case, contact characteristics between the contact electrode 130 and the second conductivity type semiconductor layer 125 may be improved The electrical characteristics of the light emitting device can be improved and the first insulating layer 140 can cover the contact electrode 130 almost entirely to improve the optical characteristics of the light emitting device. In addition, the contact electrode 130 formed of a conductive oxide is superior to the metallic electrode in bonding properties with the nitride-based semiconductor, thereby preventing increase of the forward voltage of the light emitting device and deterioration of the current dispersion efficiency due to peeling of the contact electrode 130 The reliability of the light emitting element is improved, and the deterioration of the light emitting efficiency is prevented.

The current injection into the contact electrode 130 through the second electrode 160 can be performed by controlling the distance and arrangement position between the openings in which the first insulating layer 140 exposes the contact electrode 130, It can be made even throughout. Therefore, even if the contact electrode 130 formed of the conductive oxide has a lower current dispersion efficiency in the horizontal direction as compared with the metallic electrode, the current distribution in the horizontal direction can be sufficiently achieved through the second electrode 160. Therefore, it is possible to improve the current dispersion efficiency and prevent the current crowding, thereby improving the luminous efficiency and lifetime of the light emitting device.

That is, through the structure according to the embodiments, a light emitting device having improved contact characteristics, optical characteristics, and current dispersion efficiency can be provided, and the light emitting device can be usefully used as a high output light emitting device.

10 to 12 are plan views illustrating a light emitting device according to various embodiments of the present invention. The light emitting devices of FIGS. 10 to 12 are substantially similar to the light emitting device described with reference to FIGS. 1 to 8, but differ in the shape and arrangement of the grooves.

Referring to FIG. 10, the light emitting device of this embodiment includes a first groove 120h 1 and a second groove 120h 2 that are spaced apart from each other. The first grooves 120h 1 and the second grooves 120h 2 are different from the shapes recessed from the side surfaces of the light emitting structure 120 like the grooves 120g of Figures 1 to 8, The conductive semiconductor layer 121 and the active layer 123 may be formed. The first ohmic contact electrode 151 may be located on the first groove 120h 1 and the second ohmic contact electrode 151 may be located on the second groove 120h 2 from the first ohmic contact electrode 151 and the first ohmic contact electrode 151, A second ohmic contact electrode 153 extending in a direction toward the pad electrode 183 may be located. On the other hand, the arrangement of the first to third openings 141, 143, and 145 may be substantially similar to the light emitting device of FIGS. In the case of this embodiment, the current dispersion at the lower portion of the first pad electrode 181 is different from that of the light emitting elements of Figs. 1 to 8, and a wider light emitting region can be ensured.

Referring to FIGS. 11 and 12, the light emitting device of the present embodiment has an aspect ratio different from that of the light emitting device of FIGS. 1 to 8. Accordingly, the light emitting device of FIG. 11 includes fewer grooves 120g than the light emitting devices of FIGS. 1 to 8, and the light emitting device of FIG. 12 includes a larger number Groove 120g. The grooves 120g of the present embodiments may be positioned between the first openings 141 and at least a part of the first openings 141 may be symmetrical with respect to a line corresponding to the direction in which the grooves 120g extend As shown in FIG. As described above, the arrangement of the grooves 120g and the openings of the first insulating layer 140 can be variously modified depending on the aspect ratio of the plane shape of the light emitting device, the area of the light emitting region, and the like.

13A to 15B are partial plan views and partial sectional views for explaining a light emitting device according to various other embodiments. The light emitting device according to the present embodiments is substantially similar to the light emitting device of FIGS. 1 to 8, but differs in the lower structure of the first to third openings 141, 143, and 145 of the first insulating layer 140 .

13A and 13B, the light emitting device of this embodiment further includes a current blocking layer 190. The current blocking layer 190 may be interposed between the second conductive semiconductor layer 125 and the contact electrode 130 and the first to third openings 141, 190). ≪ / RTI > The current blocking layer 190 may be located under at least some of the first to third openings 141, 143, and 145. That is, the current blocking layer 190 is formed below the first to third openings 141, 143, and 145 in consideration of the current dispersion and the light emission pattern, and the remaining portions of the first to third openings 141 and 143 And 145 may be omitted. This prevents the current from directly conducting to the region of the second conductivity type semiconductor layer 125 immediately below the portion where the second electrode 160 and the contact electrode 130 are in contact with each other, And current dispersion efficiency can be improved.

14A and 14B, the contact electrode 130 of the light emitting device of the present embodiment includes an opening 130a for exposing the second conductivity type semiconductor layer 125. [ The second electrode 160 fills at least a portion of the opening 130a and may contact the second conductive semiconductor layer 125. [ In this case, the contact resistance between the second pad electrode 183 and the second conductivity type semiconductor layer 125 is higher than the contact resistance between the second pad electrode 183 and the contact electrode 130, The current flowing through the contact electrode 130 is high. For example, the second pad electrode 183 and the second conductive semiconductor layer 125 may form a Schottky contact. Accordingly, it is possible to prevent the current from directly conducting to the region of the second conductivity type semiconductor layer 125 immediately below the portion where the second electrode 160 and the contact electrode 130 are in contact with each other, It is possible to prevent the current concentration at the portion and improve the current dispersion efficiency.

15A and 15B, the light emitting device of the present embodiment further includes a current blocking layer 190, and the contact electrode 130 includes an opening 130a for exposing the second conductive semiconductor layer 125 do. In this case, the second electrode 160 and the second conductivity type semiconductor layer 125 form a Schottky contact, and the region around the opening 130a of the contact electrode 130 is electrically connected to the current blocking layer 190 The current is prevented from being directly conducted to the region of the second conductivity type semiconductor layer 125 immediately below the portion where the second electrode 160 and the contact electrode 130 are in contact with each other. Therefore, the current dispersion efficiency of the light emitting device can be further improved.

A current cut-off in the above-described embodiment layer 190 may comprise an insulating material, for example, SiO x and SiN x Or may include a distributed Bragg reflector in which layers of insulating material having different refractive indices are stacked.

16 is a partial cross-sectional view illustrating a light emitting device according to another embodiment of the present invention. 17 is a partial cross-sectional view illustrating a light emitting device according to still another embodiment of the present invention.

Referring to Fig. 16, the light emitting device of this embodiment further includes a supporting electrode 165. Fig. The supporting electrode 165 may be interposed between the contact electrode 130 and the second electrode 160. Particularly, the second electrode 160 may be located at a portion where the second electrode 160 and the contact electrode 130 are electrically connected through the first to third openings 141, 143, and 145, And the contact electrode 130 may be in contact with the receiving electrode 165, respectively. At this time, the supporting electrode 165 may be positioned below at least one of the first to third openings 141, 143, and 145. The first insulating layer 140 may at least partially cover the side surface of the supporting electrode 165 and may cover a part of the upper surface of the supporting electrode 165. [ At least a portion of the support electrode 165 is exposed through the first to third openings 141, 143 and 145 of the first insulation layer 140. The supporting electrode 165 may be formed of a metallic material, or may include a metallic material. In particular, the supporting electrode 165 may be formed of a metallic material having excellent adhesion with the contact electrode 130 including a conductive oxide. The supporting electrode 165 is interposed between the contact electrode 130 and the second electrode 160 to prevent the deterioration of the electrical characteristics that may occur due to the peeling of the second electrode 160 from the contact electrode 130 .

Also, in various embodiments, the light emitting device may further include a current blocking layer 190 as shown in FIG. In this case, the area of the current blocking layer 190 may be larger than the area of the supporting electrode 165, and the area of the supporting electrode 165 may be larger than the area of the first to third openings 141, 143, have.

18 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting apparatus.

Referring to FIG. 18, the illumination device according to the present embodiment includes a diffusion cover 1010, a light emitting device module 1020, and a body part 1030. The body 1030 may receive the light emitting module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the light emitting module 1020.

The body part 1030 is not limited as long as it can receive and support the light emitting element module 1020 and supply the electric power to the light emitting element module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [

The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the light emitting device module 1020, and may include at least one IC chip. The IC chip may control, convert, or control the characteristics of the power supplied to the light emitting device module 1020. The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 . The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 1037 is electrically connected to the power supply unit 1033 in the power supply case 1035 so that external power can be supplied to the power supply unit 1033.

The light emitting element module 1020 includes a substrate 1023 and a light emitting element 1021 disposed on the substrate 1023. The light emitting device module 1020 is provided on the body case 1031 and can be electrically connected to the power supply device 1033.

The substrate 1023 is not limited as long as it is a substrate capable of supporting the light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [ The light emitting device 1021 may include at least one of the light emitting devices according to the embodiments of the present invention described above.

The diffusion cover 1010 is disposed on the light emitting element 1021 and may be fixed to the body case 1031 to cover the light emitting element 1021. [ The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.

19 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.

The display device of this embodiment includes a display panel 2110, a backlight unit for providing light to the display panel 2110, and a panel guide for supporting the lower edge of the display panel 2110.

The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate.

The backlight unit includes a light source module including at least one substrate and a plurality of light emitting elements (2160). Furthermore, the backlight unit may further include a bottom cover 2180, a reflective sheet 2170, a diffusion plate 2131, and optical sheets 2130.

The bottom cover 2180 may open upward to accommodate the substrate, the light emitting element 2160, the reflective sheet 2170, the diffusion plate 2131, and the optical sheets 2130. Further, the bottom cover 2180 can be engaged with the panel guide. The substrate may be disposed below the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface. In addition, the substrate may be formed in a plurality, and the plurality of substrates may be arranged in a side-by-side manner, but not limited thereto, and may be formed of a single substrate.

The light emitting device 2160 may include at least one of the light emitting devices according to the embodiments of the present invention described above. The light emitting elements 2160 may be regularly arranged in a predetermined pattern on the substrate. In addition, a lens 2210 is disposed on each light emitting element 2160, so that the uniformity of light emitted from the plurality of light emitting elements 2160 can be improved.

The diffusion plate 2131 and the optical sheets 2130 are placed on the light emitting element 2160. The light emitted from the light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.

20 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment is applied to a display device.

The display device including the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit disposed on the back surface of the display panel 3210 and configured to emit light. The display device further includes a frame 240 supporting the display panel 3210 and receiving the backlight unit and covers 3240 and 3280 surrounding the display panel 3210.

The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate. The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit.

The backlight unit for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the top surface, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 that converts light into light. The backlight unit of the present embodiment includes optical sheets 3230 positioned on the light guide plate 3250 and diffusing and condensing light, light directed downward of the light guide plate 3250 disposed below the light guide plate 3250 And a reflective sheet 3260 that reflects light toward the display panel 3210. [

The light source module includes a substrate 3220 and a plurality of light emitting devices 3110 disposed on a surface of the substrate 3220 at predetermined intervals. The substrate 3220 is not limited as long as it supports the light emitting element 3110 and is electrically connected to the light emitting element 3110, for example, it may be a printed circuit board. The light emitting device 3110 may include at least one light emitting device according to the embodiments of the present invention described above. The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. Through the light guide plate 3250 and the optical sheets 3230, the point light source emitted from the light emitting elements 3110 can be transformed into a surface light source.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the edge display device as in the present embodiment.

21 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

Referring to FIG. 21, the headlamp includes a lamp body 4070, a substrate 4020, a light emitting element 4010, and a cover lens 4050. Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.

Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070. The substrate 4020 is not limited as long as it can support the light emitting element 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [ Also, the light emitting device 4010 may be electrically connected to an external power source through the conductive pattern of the substrate 4020. In addition, the light emitting device 4010 may include at least one light emitting device according to the embodiments of the present invention described above.

The cover lens 4050 is located on the path through which light emitted from the light emitting element 4010 travels. For example, as shown, the cover lens 4050 may be disposed apart from the light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is to be emitted from the light emitting device 4010 . The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted. The connecting member 4040 may serve as a light guide for fixing the cover lens 4050 to the substrate 4020 and for arranging the light emitting element 4010 to provide the light emitting path 4045. [ At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate heat generated when the light emitting device 4010 is driven.

As described above, the light emitting device according to the embodiments of the present invention can be applied to a head lamp, particularly, a headlamp for a vehicle as in the present embodiment.

As described above, the various features described above are not limited to the respective embodiments, and the respective features may be combined, changed, and replaced with each other in various embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made without departing from the technical idea of the present invention.

Claims (20)

A first conductivity type semiconductor layer, a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first and second conductivity type semiconductor layers, A light emitting structure including at least one groove for partially exposing the semiconductor layer;
A contact electrode at least partially located on the second conductivity type semiconductor layer, the contact electrode comprising a light-transmitting conductive oxide that is in ohmic contact with the second conductivity type semiconductor layer;
And a fourth opening exposing the first conductive type semiconductor layer exposed in the groove, the first and second openings covering the light emitting structure and the contact electrode, the first and second openings exposing the contact electrode, 1 insulating layer;
A first electrode located on the at least one groove and making an ohmic contact with the first conductive semiconductor layer through the fourth opening;
A second electrode located on the first insulating layer and electrically connected to the contact electrode through the first and second openings;
A second insulating layer covering the first and second electrodes and including a fifth opening partially exposing the first electrode and a sixth opening partially exposing the second electrode;
A first pad electrode located on the second insulating layer and electrically in contact with the first electrode through the fifth opening; And
And a second pad electrode located on the second insulating layer and electrically in contact with the second electrode through the sixth opening,
Wherein the plurality of first openings are located below the first pad electrode and the plurality of second openings are located below the second pad electrode,
Wherein an average spacing distance of the first openings is greater than an average spacing distance of the second openings. The method according to claim 1,
Wherein the first electrode includes a first ohmic contact electrode located under the first pad electrode,
And at least a part of the first ohmic contact electrode is located between the first openings. The method of claim 2,
Wherein the first electrode comprises:
And a second ohmic contact electrode extending in a direction from the first ohmic contact electrode toward the second pad electrode and at least a part of the second ohmic contact electrode being located under the space between the first and second pad electrodes. The method of claim 2,
Wherein the first ohmic contact electrode comprises a main electrode,
And at least a part of the main electrode is exposed to the fifth opening to be in contact with the first pad electrode. The method of claim 4,
Wherein the first ohmic contact electrode includes a plurality of main electrodes and a sub electrode connecting the plurality of main electrodes and having a line width narrower than the main electrode,
And the sub electrode covers the second insulating layer. The method according to claim 1,
Wherein the first electrode has a shape extending from the first pad electrode toward the second pad electrode,
Wherein at least a part of the first openings are symmetrically arranged with respect to a line along a direction in which the first electrode extends. The method according to claim 1,
Wherein a shortest distance from a region where the contact electrode and the second electrode are in contact through the first opening to an outer side face of the active layer is a distance from a region where the contact electrode and the second electrode are in contact through the first opening, Emitting element is shorter than the shortest distance to the region where the first electrode and the first conductivity type semiconductor layer are in ohmic contact. The method according to claim 1,
Wherein the first insulating layer further includes a third opening located below a space between the first pad electrode and the second pad electrode. The method according to claim 1,
Wherein the at least one groove has a shape that is recessed from a side surface of the light emitting structure and extends in a direction from the first pad electrode toward the second pad electrode. The method of claim 9,
Wherein the at least one groove comprises a plurality of first grooves and a second groove connecting the plurality of first grooves and having a width smaller than the first groove,
Wherein the first groove and the second groove are located below the first pad electrode. The method of claim 10,
The at least one groove further comprises a third groove extending from the first groove and having a width smaller than that of the first groove,
And at least a part of the third groove is located below a space between the first and second pad electrodes. The method of claim 9,
Wherein the light emitting structure includes a plurality of grooves, and at least two of the plurality of grooves are symmetrically disposed with respect to any line located therebetween. The method according to claim 1,
Wherein the at least one groove includes at least one hole penetrating the second conductivity type semiconductor layer and the active layer. 14. The method of claim 13,
Wherein the at least one hole includes a first hole located below the first pad electrode and a second hole extending from the first hole toward the second pad electrode. The method according to claim 1,
And the contact electrode covers at least 90% of the upper surface of the second conductive type semiconductor layer. 16. The method of claim 15,
And the second electrode is located on an outer edge region of the contact electrode. The method according to claim 1,
And a current blocking layer interposed between the contact electrode and the second conductive type semiconductor layer, the current blocking layer being located below an area where the contact electrode and the second electrode are in contact with each other. The method according to claim 1,
And the contact electrode includes a seventh opening located in at least one of the first and second openings and exposing the second conductive type semiconductor layer. The method according to claim 1,
And a supporting electrode located under at least one of the first and second openings and interposed between the second electrode and the contact electrode. The method according to claim 1,
Wherein the first insulating layer comprises a distributed Bragg reflector, and the second insulating layer comprises SiN x .
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066304A (en) 2009-09-18 2011-03-31 Toyoda Gosei Co Ltd Light-emitting element
JP2012049366A (en) 2010-08-27 2012-03-08 Toyoda Gosei Co Ltd Light-emitting element
JP2014011275A (en) 2012-06-28 2014-01-20 Toshiba Corp Semiconductor light-emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011066304A (en) 2009-09-18 2011-03-31 Toyoda Gosei Co Ltd Light-emitting element
JP2012049366A (en) 2010-08-27 2012-03-08 Toyoda Gosei Co Ltd Light-emitting element
JP2014011275A (en) 2012-06-28 2014-01-20 Toshiba Corp Semiconductor light-emitting device

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