The light emitting device according to the embodiments of the present disclosure can be implemented in various aspects.
A light emitting device according to embodiments of the present invention includes: a first conductive semiconductor layer; A mesa having an active layer and a second conductivity type semiconductor layer located on the active layer, the mesa being located on the first conductivity type semiconductor layer; A first electrode electrically connected to the first conductive semiconductor layer; A second conductive oxide electrode located on the mesa; And a second electrode located on the second conductive oxide electrode, wherein the first electrode includes a first electrode pad and a first electrode extension extending from the first electrode pad, At least one metal electrode extension and at least one first conductive oxide electrode extension, wherein the metal electrode extension extends from one side of the first electrode pad, and the first conductive oxide electrode extension extends from the first side Extending from one side of the electrode pad to the other side.
The first conductive oxide electrode extension may include at least one of ZnO and ZnO including a metal dopant, and the metal dopant may include Ga.
The first electrode extension may include a plurality of metal electrode extensions and / or a plurality of first conductive oxide electrode extensions.
The metal electrode extension part and the first conductive oxide electrode extension part may extend in directions opposite to each other.
The metal electrode extension part and the first conductive oxide electrode extension part may have different line widths.
The line width of the metal electrode extension portion may be larger than the line width of the first conductive oxide electrode extension portion.
The line width of the first conductive oxide electrode extension portion may be larger than the line width of the metal electrode extension portion.
One side of the first conductive-oxide electrode extension may be flush with one side of the first conductive-type semiconductor layer.
The first electrode pad may include a metal electrode pad and a first conductive oxide electrode pad, and the first conductive oxide electrode extension may extend from the first conductive oxide electrode pad.
The metal electrode pad may be located on the first conductive oxide electrode pad, and the area of the first conductive oxide electrode pad may be larger than the area of the metal electrode pad.
At least a portion of the first conductive oxide electrode extension may contact at least a portion of the metal electrode extension.
A portion of the first conductive oxide electrode extension may be located below the metal electrode extension.
Wherein a portion of the first conductive-oxide-electrode extended portion may be interposed between the first conductive-type semiconductor layer and the metal-electrode extended portion, and a portion of the first conductive- Can be formed.
The first conductive type semiconductor layer may include a region where a part of an upper surface of the first conductive type semiconductor layer formed around the mesa is exposed, and the first conductive oxide electrode extended portion may include a first conductive type semiconductor layer, And can contact the conductive type semiconductor layer.
The first conductive oxide electrode extension may at least partially surround the mesa.
The first conductive oxide electrode extension may form a closed curve surrounding the mesa.
The light emitting device may further include an insulating layer partially disposed on the mesa, wherein a portion of the metal electrode extension portion and at least a portion of the first electrode pad are located on the insulating layer, May include an extension contact portion that is in contact with the first conductive type semiconductor layer.
The mesa may include at least one groove embedded from the side thereof, the top surface of the first conductive type semiconductor layer may be partially exposed through the groove, and the insulating layer may be exposed through the groove, 1 conductive type semiconductor layer, and the extended portion contact portion may be in electrical contact with the upper surface of the first conductive type semiconductor layer through the opening of the insulating layer.
The first conductive oxide electrode extension may partially surround the mesa and may not be located around the groove of the mesa.
A portion of the first conductive-oxide-electrode extending portion may be interposed between an upper surface of the first conductive-type semiconductor layer exposed in the groove and a portion of the metal-electrode extending portion, and the portion of the first conductive- The ohmic contact with the upper surface of the first conductivity type semiconductor layer exposed in the groove can be achieved.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can sufficiently convey the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms, and the technical features described in the respective embodiments may be applied to other embodiments equally or similarly. In the drawings, the width, length, thickness, etc. of components may be exaggerated for convenience. It is also to be understood that when an element is referred to as being "above" or "above" another element, But also includes the case where another component is interposed between the two. Like reference numerals designate like elements throughout the specification.
The respective composition ratios, growth methods, growth conditions, thicknesses, etc. for the semiconductor layers described below are examples, and the present invention is not limited thereto. For example, in the case of being denoted by AlGaN, the composition ratio of Al and Ga can be variously applied according to the needs of ordinary artisans. Further, in the following embodiments, the material referred to as ZnO may include single crystal ZnO having a predetermined crystal structure, and may include ZnO having a wurtzite crystal structure, for example. In addition, the single crystal ZnO can be a single crystal including a thermodynamic intrinsic defect, and can also be a single crystal having a small amount of defects such as a void defect, a dislocation, a grain boundary ), And the like. Further, the single crystal ZnO may be a single crystal containing a small amount of impurities or dopants. That is, monocrystalline ZnO containing unintentional or unavoidable defects or impurities, and monocrystalline ZnO containing dopants may all be included in the single crystal ZnO referred to herein.
1 to 9 are plan views, sectional views, enlarged plan views, and enlarged sectional views for explaining a light emitting device according to embodiments of the present invention. 1 is a plan view showing a plane of the light emitting device, and FIG. 2 is a plan view showing a plane of the light emitting device, with some constructions omitted in order to explain the arrangement of the light transmitting conductive layer 180 And FIG. 3 is a plan view illustrating a plane of the light emitting device, illustrating a predetermined current path region (CPR). FIGS. 4 to 7 are cross-sectional views showing cross sections of portions corresponding to lines A-A ', B-B', C-C ', and D-D', respectively, of FIG. 8 is an enlarged plan view showing an enlarged a region in Fig. 1, and Fig. 9 is an enlarged sectional view showing a cross section of a portion corresponding to E-E 'line and F-F' line in Fig.
1 to 9, the light emitting device includes a light emitting structure 120, a first electrode 200, and a second electrode 160. Furthermore, the light emitting device may further include a substrate 110, a current blocking layer 130, and a second conductive oxide electrode 140. In addition, the light emitting device may include first to fourth sides (101, 102, 103 and 104, respectively). As shown in the figure, the light emitting device may have a rectangular shape in a plan view, but the present invention is not limited thereto.
The substrate 110 may be an insulating or conductive substrate. The substrate 110 may be a growth substrate for growing the light emitting structure 120, and may include a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. For example, the substrate 110 may be a sapphire substrate, and in particular, may be a patterned sapphire substrate (PSS) having an upper surface patterned. When the substrate 110 is a patterned sapphire substrate, the substrate 110 may include a plurality of protrusions 110p formed on the upper surface thereof. However, the present invention is not limited thereto, and the substrate 110 may be a secondary substrate for supporting the light emitting structure 120.
Although the first conductive semiconductor layer 121 is disposed on the substrate 110 in this embodiment, the substrate 110 may be a growth substrate on which the semiconductor layers 121, 123, and 125 may be grown. The semiconductor layers 121, 123, and 125 may be removed after being grown, separated or removed through physical and / or chemical methods.
The light emitting structure 120 includes a first conductive semiconductor layer 121, a second conductive semiconductor layer 125 disposed on the first conductive semiconductor layer 121, a first conductive semiconductor layer 121, And an active layer 123 located between the second conductivity type semiconductor layers 125. [ The light emitting structure 120 may include a mesa 120m disposed on the first conductive semiconductor layer 121 and including an active layer 123 and a second conductive semiconductor layer 125. [
The first conductivity type semiconductor layer 121, the active layer 123, and the second conductivity type semiconductor layer 125 may be grown in the chamber using a known method such as MOCVD. The first conductivity type semiconductor layer 121, the active layer 123, and the second conductivity type semiconductor layer 125 may include a III-V series nitride-based semiconductor. For example, the first conductivity type semiconductor layer 121, the active layer 123, ) N. < / RTI > The first conductivity type semiconductor layer 121 may include n-type impurities (e.g., Si, Ge, Sn) and the second conductivity type semiconductor layer 125 may include p-type impurities (e.g., Mg, Sr, Ba). It may also be the opposite. The active layer 123 may include a multiple quantum well structure (MQW), and the composition ratio of the nitride-based semiconductor may be adjusted so as to emit a desired wavelength. In particular, in this embodiment, the second conductivity type semiconductor layer 125 may be a p-type semiconductor layer.
The mesa 120m is located on a partial region of the first conductivity type semiconductor layer 121 so that the surface of the first conductivity type semiconductor layer 121 is exposed in a region where the mesa 120m is not formed have. For example, as shown in FIGS. 1 to 7, the upper surface of the first conductivity type semiconductor layer 121 may be exposed in at least a portion of the periphery of the mesa 120m. The mesa 120m may be formed by partially etching the second conductive semiconductor layer 125 and the active layer 123. The shape of the mesa 120m is not limited, but, for example, as shown, the mesa 120m may be formed along the side surface of the first conductive type semiconductor layer 121. [ The mesa 120m may have a sloped side surface, but may have a side surface perpendicular to the top surface of the first conductivity type semiconductor layer 121. [
In addition, the mesa 120m may include at least one side including at least one groove 120g embedded from its side. A part of the first conductivity type semiconductor layer 121 may be exposed through the groove 120g. Further, when a plurality of the grooves 120g are formed, the mesa 120m may include at least one protrusion 120p disposed between the grooves 120g.
For example, as shown, the mesa 120m may include first through fourth sides (120a, 120b, 120c, and 120d, respectively). The first to fourth sides 120a, 120b, 120c and 120d of the mesa 120m may be positioned adjacent to the first to fourth sides (101, 102, 103 and 104, respectively) have. For example, the first side 120a of the mesa 120m may be positioned adjacent to the first side 101 of the light emitting device and may be generally formed along the first side 101 of the light emitting device. At this time, at least one of the sides of the mesa 120m may include at least one groove 120g. In this embodiment, the second side 120b of the mesa 120m includes a plurality of grooves 120g can do. The first conductivity type semiconductor layer 121 is exposed through the plurality of grooves 120g and the first conductivity type semiconductor layer 121 exposed through the groove 120g exposes the metal extension contact portion 155, As shown in Fig. Further, a plurality of protrusions 120p are formed between the grooves 120g. The distance between the grooves 120g may be substantially constant, but the present invention is not limited thereto. In various embodiments, the groove 120g may be formed on two or more of the sides of the mesa 120m. For example, the groove 120g may be formed on the second side surface 120b and the third side surface 120c of the mesa 120m.
The mesa 120m may further include a concavo-convex pattern (not shown) to be formed on a side surface thereof. Light is scattered through the concavo-convex pattern, and light extraction efficiency of the light emitting device can be improved.
The current blocking layer 130 is at least partially located on the second conductivity type semiconductor layer 125. The current blocking layer 130 may be positioned on the second conductivity type semiconductor layer 125 in correspondence to a portion where the second electrode 160 is located. The current blocking layer 130 may include a pad current blocking layer 131 and an extended current blocking layer 133. The pad current blocking layer 131 and the extended portion current blocking layer 133 may be positioned corresponding to the positions of the second electrode pad 161 and the second electrode extending portion 163, respectively. As shown, the pad current blocking layer 131 is disposed adjacent to the first side 101 of the light emitting device and the extended current blocking layer 133 extends from the first side 101 to the third side 103, respectively.
The current supplied to the second electrode 160 of the current blocking layer 130 is directly transmitted to the semiconductor layer to prevent current from being concentrated. Accordingly, the current blocking layer 130 may have an insulating property, may include an insulating material, and may be formed of a single layer or a multilayer. For example, the current blocking layer 130 may comprise SiO x or SiN x , or may comprise a distributed Bragg reflector in which layers of insulating material with different refractive indices are stacked. That is, the current blocking layer 130 may have light transmittance, light reflectivity, or selective light reflectivity.
In addition, the current blocking layer 130 may have a larger area than the second electrode 160 formed on the current blocking layer 130. Accordingly, the second electrode 160 may be positioned within the region where the current blocking layer 130 is formed.
The second conductive oxide electrode 140 may be located on the second conductive semiconductor layer 125 and may include a portion of the upper surface of the second conductive semiconductor layer 125 and a portion of the current blocking layer 130 Cover. The second conductive oxide electrode 140 may include an opening 140a that partially exposes the pad current blocking layer 131. The second conductive oxide electrode 140 includes a protrusion 140p projecting from the side surface 140g of the opening 140a. The side surface 140g of the opening 140a may be located on the pad current blocking layer 131 and may be formed along the side surface of the pad current blocking layer 131. On the other hand, the protrusion 140p can protrude from the side surface 140g of the opening 140a. The protrusion 140p may protrude toward the center of the pad current blocking layer 131. [ The protrusions 140p may be formed in plural.
The second conductive oxide electrode 140 may include a material having optical transparency and electrical conductivity and may be formed of a conductive oxide such as ITO, RuOx, RuOx / ITO, MgO, ZnO, or the like and a light- And a metal layer. In addition, the second conductive oxide electrode 140 may form an ohmic contact with the second conductive type semiconductor layer 125. Since the second electrode 160 does not directly contact the second conductive type semiconductor layer 125, the current can be more effectively dispersed through the second conductive oxide electrode 140. When the second conductive oxide electrode 140 includes ZnO, the second conductive oxide electrode 140 may include various dopants. The dopant may include at least one of Ag, In, Sn, Cd, Ga, Al, Mg, Ti, Mo, Ni, Cu, Au, Pt, Rh, Ir, Ru and Pd.
In this embodiment, the second conductive oxide electrode 140 may include at least one of GZO, ZnO, and ITO including a Ga dopant. In addition, the second conductive oxide electrode 140 may include substantially the same material as the first conductive oxide electrode 180 described later, or may be formed of substantially the same material. In another embodiment, the second conductive oxide electrode 140 and the first conductive oxide electrode 180 may be formed of different materials. For example, the second conductive oxide electrode 140 may be formed of ITO And the first conductive oxide electrode 180 may be formed of ZnO including a Ga dopant.
The second electrode 160 is located on the second conductive type semiconductor layer 125 and at least a portion of the second electrode 160 is located on a region where the current blocking layer 130 is located. The second electrode 160 includes a second electrode pad 161 and a second electrode extension 163. The second electrode pad 161 and the second electrode extension 163 include a pad current blocking layer 131 and the extension portion current blocking layer 133. [ Accordingly, a part of the second conductive oxide electrode 140 may be interposed between the second electrode 160 and the current blocking layer 130.
In particular, the second electrode pad 161 may be positioned on the opening 140a of the second conductive oxide electrode 140. The second electrode pad 161 and the side surface 140g of the opening 140a are separated from each other so that at least a part of the protrusion 140p of the conductive oxide electrode 140 is electrically connected to the second electrode pad 161 and the pad current blocking layer 131, respectively. Accordingly, the second electrode pad 161 and the protrusion 140p of the second conductive oxide electrode 140 are in contact with each other and are electrically connected. The shape of the second electrode pad 161 is not limited, but may be generally circular, for example, as shown. The pad current blocking layer 131 of the current blocking layer 130 may also be formed in a circular shape similar to that of the second electrode pad 161 and the opening 140a of the second conductive oxide electrode 140 And may be formed in a similar circle. However, the present invention is not limited thereto. Although the position of the second electrode pad 161 is not limited, the current may be smoothly dispersed so that light is emitted from the front surface of the active layer 123 of the light emitting device. For example, as shown, the second electrode pad 153 may be located adjacent to the first side 101 opposite the third side 103, where the metal electrode pad 151 is located adjacent.
The second electrode extension 163 extends from the second electrode pad 161. In this embodiment, the second electrode extension portion 163 may extend in a direction from the second electrode pad 161 toward the third side face 103 side. Also, the direction in which the second electrode extension part 163 extends may change as it extends to the second electrode extension part 163. For example, the distal end of the second electrode extension 163 may be bent toward the portion between the third side face 103 and the fourth side face 104 of the light emitting element. This can be variously designed in consideration of the distance between the metal electrode pad 151 and the second electrode extension part 163. A second conductive extension electrode 163 is interposed between at least a portion of the second electrode extension 163 and the extension of the current blocking layer 133 so that the second electrode extension 163 has a second conductivity And is electrically connected to the oxide electrode 140.
The end of the second electrode extension 163 may include a portion having a width larger than the average width of the second electrode extension 163. For example, the end of the second electrode extension part 163 may be formed in a circular shape having a diameter larger than the width of the second electrode extension part 163. At this time, the diameter of the end may be about 0.5 to 5 mu m larger than the width of the second electrode extension part 163. However, the present invention is not limited thereto, and the shape of the end of the second electrode extension part 163 may be modified into various shapes such as a polygonal shape, an elliptical shape, and an arc shape.
Meanwhile, the arrangement of the second electrode 160 is not limited thereto, and may be variously modified and changed according to the shape of the light emitting device.
The second electrode 160 may include a conductive material and may include a metallic material such as Ti, Pt, Au, Cr, Ni, Al, Mg, have. A Ti layer / a Pt layer / Au layer, a Cr layer / Au layer, a Cr layer / a Pt layer / Au layer, an Ni layer / Au layer, a Ti layer / Au layer, Ni layer / Pt layer / Au layer, and a metal laminate structure of Cr layer / Al layer / Cr layer / Ni layer / Au layer.
A second conductive oxide electrode 140 is interposed between a portion of the second electrode 160 and the current blocking layer 130 to form the second electrode 160 and the second conductive oxide electrode 140, The current is conducted through the contact portion. Therefore, the area in which the second electrode 160 and the second conductive oxide electrode 140 are in contact can be adjusted so that the current can be effectively dispersed, and in this connection, referring to FIGS. 8 and 9, The structure of the region around the second electrode 160, particularly, the second electrode pad 161 will be described in more detail. 8 is an enlarged view of the area? In Fig. 1, and Figs. 9 (a) and 9 (b) are cross-sectional views of portions corresponding to lines E-E 'and F-F' do.
8A and 8B, for convenience of explanation, the second conductive oxide electrode 140 is shown by a solid line, and the current blocking layer 130 and the second electrode 160 are shown by broken lines Respectively. The opening 140a of the second conductive oxide electrode 140 includes a side surface 140g and the side surface 140g is positioned on the pad current blocking layer 131, (Not shown). The opening 140a of the second conductive oxide electrode 140 is formed along the side surface of the pad current blocking layer 131 and is formed to substantially correspond to the side surface shape of the pad current blocking layer 131. In particular, since the side surface of the opening 140a is located on the pad current blocking layer 131, the top surface of the second conductive type semiconductor layer 125 can be covered by the second conductive oxide electrode 140 without being exposed . Accordingly, it is possible to prevent the static electricity generated around the second electrode pad 161 from being directly conducted to the second conductive type semiconductor layer 125, thereby preventing the failure of the light emitting element more effectively by the electrostatic discharge have.
The second conductive oxide electrode 140 includes at least one protrusion 140p and the protrusion 140p protrudes from the side surface of the opening 140a. As shown in Figs. 8A, 8B, 9A and 9B, the protrusion 140p is formed so that the at least one protrusion 140p is electrically connected to the pad current blocking layer 131 And is sandwiched between the pad current blocking layer 131 and the second electrode pad 161. In addition, Accordingly, the second electrode pad 161 and the protrusion 140p are electrically connected to each other, and current is conducted through the second electrode pad 161 and the protrusion 140p. Thus, the current injection into the region where the protrusion 140p is located can be smoothly performed. The second electrode extension portion 163 of the second electrode 160 contacts the second conductive oxide electrode 140 and the second electrode extension portion 163 contacts the second conductive type semiconductor layer 125 The injection takes place. Therefore, the number and position of the protrusions 140p can be adjusted according to the position of the second electrode extension portion 163.
Specifically, this will be described with reference to Fig. 8 (b). First, a hypothetical plane (virtual coordinate system) having the x axis and the y axis is defined with the center portion 161c of the second electrode pad 161 as the origin. The hypothetical plane includes a first quadrant 1QD, a second quadrant 2QD, a third quadrant 3QD and a fourth quadrant 4QD. The interface between the second electrode extension 161 and the second electrode extension 163 extends from the second electrode pad 161 to the interface between the second electrode extension 161 and the second electrode extension 161 165 is located on at least one of the x (+) axis, the x (-) axis, the y (+) axis, the y (-) axis and the first through fourth quadrants 1QD, 2QD, 3QD, . At least one protrusion 140p may be formed on the remaining x (+) axis, x (-) axis, y (+) axis, y 1 to 4 < th > quadrant 1QD, 2QD, 3QD and 4QD. For example, in this embodiment, the interface 165 between the second electrode pad 161 and the second electrode extension 163 is located on the fourth quadrant 4QD or y (-) axis and the three protrusions 140p are located on the x (+) axis, the x (-) axis, and the y (+) axis, respectively. Therefore, a current is injected into the region corresponding to the periphery of the fourth quadrant 4QD or the y (-) axis by the second electrode extension portion 163, and the current flows through the x (+) axis, the x The currents may be injected into the regions corresponding to the periphery of the axis by the protrusions 140p.
The positions of the protrusions 140p and the positions of the interface 165 between the second electrode pad 161 and the second electrode extension 163 may be variously modified. 25 (a) and 25 (b) are enlarged plan views for explaining a light emitting device according to embodiments of the present invention. 25A and FIG. 25B, a hypothetical plane (virtual coordinate system) having the x axis and the y axis is defined with the center portion 161c of the second electrode pad 161 as the origin. The hypothetical plane includes a first quadrant 1QD, a second quadrant 2QD, a third quadrant 3QD and a fourth quadrant 4QD. The interface between the second electrode extension 161 and the second electrode extension 163 extends from the second electrode pad 161 to the interface between the second electrode extension 161 and the second electrode extension 161 165 is located on at least one of the x (+) axis, the x (-) axis, the y (+) axis, the y (-) axis and the first through fourth quadrants 1QD, 2QD, 3QD, . At least one protrusion 140p may be formed on the remaining x (+) axis, x (-) axis, y (+) axis, y 1 to 4 < th > quadrant 1QD, 2QD, 3QD and 4QD. For example, in this embodiment, the interface 165 between the second electrode pad 161 and the second electrode extension 163 is located on the fourth quadrant 4QD or y (-) axis and the three protrusions 140p are located on the x (+) axis, the x (-) axis, and the y (+) axis, respectively. Therefore, a current is injected into the region corresponding to the periphery of the fourth quadrant 4QD or the y (-) axis by the second electrode extension portion 163, and the current flows through the x (+) axis, the x The currents may be injected into the regions corresponding to the periphery of the axis by the protrusions 140p.
On the other hand, the area of the portion of the second electrode pad 161 that is in contact with the second conductive oxide electrode 140 may be 1% or more and 20% or less with respect to the total area of the second electrode pad 161, , 1.5% or more and 13% or less, and further, 3% or more and 5% or less. The area of the portion of the second electrode pad 161 that is in contact with the second conductive oxide electrode 140 is adjusted to the above ratio so that the portion of the second electrode pad 161 that is in contact with the pad current blocking layer 131 The area can be relatively increased. Therefore, the peeling of the second electrode pad 161, which may occur at a portion where the second electrode pad 161 and the second conductive oxide electrode 140 are in contact with each other, can be effectively suppressed. Further, the protrusion 140p may have various shapes and may have, for example, an arc shape or an elliptical arc shape as shown in the figure.
Since the second conductive oxide electrode 140 is interposed only in a part of the interface between the second electrode pad 161 and the pad current blocking layer 131 as in the present embodiment, . In addition, since the second electrode pad 161 comes into contact with the protrusion 140p of the second conductive oxide electrode 140, the second electrode pad 161 can be separated from the second electrode pad 161 and the second conductive oxide electrode 140 The current densification phenomenon can be alleviated and the current can be smoothly dispersed to portions where the second electrode extension portion 163 is not located. By smoothly distributing the current in the horizontal direction, the power of the light emitting element can be improved and the forward voltage Vf can be lowered. In addition, since there is no portion where the second electrode pad 161 and the second conductive type semiconductor layer 125 are directly connected to each other through the second conductive oxide electrode 140, defects or damage due to static electricity can be prevented So that a light emitting element having high resistance to electrostatic discharge can be provided.
The first electrode 200 is electrically connected to the first conductive semiconductor layer 121. The first electrode 200 is formed by ohmic contact with a part of the upper surface of the first conductive type semiconductor layer 121 exposed by partially removing the second conductive type semiconductor layer 125 and the active layer 123, Layer 121 as shown in FIG. The first electrode 200 is positioned on the light emitting structure 120. For example, at least a portion of the first electrode 200 may be located on the first conductivity type semiconductor layer 121, or at least a portion of the first electrode 200 may be located on the mesa 120m .
The first electrode 200 may include first electrode pads 151 and 181 and first electrode extensions 153, 182, 183, 184, and 185. The first electrode 200 includes a metal electrode 150 and a first conductive oxide electrode 180. The metal electrode 150 may include a metal electrode pad 151 and a metal electrode extension 153. The first conductive oxide electrode 180 may include first conductive oxide electrode extensions 182, 183, 184, 185 And further, may further include a first conductive oxide electrode pad 181. The first electrode pads 151 and 181 may include a metal electrode pad 151 and may further include a first conductive oxide electrode pad 181. The first electrode extensions 153, 182, 183, 184 and 185 include at least one metal electrode extension 153 and at least one first conductive oxide electrode extension 182, 183, 184 and 185 .
At least one metal electrode extension 153 and at least one first conductive oxide electrode extension 182, 183, 184, 185 extend from the first electrode pad 151, 181. The metal electrode extension 153 may extend from one side of the first electrode pads 151 and 181 and the first conductive oxide electrode extensions 182, 183, 184, and 185 may extend from one side of the first electrode pads 151 and 181, Electrode pads 151 and 181, respectively. For example, the first conductive oxide electrode extensions 182, 183, 184, 185 and the metal electrode extensions 153 may extend in opposite directions. The first conductive-oxide-electrode extension portions 182, 183, 184 and 185 are located on the exposed region of the first conductive type semiconductor layer 121 of the light emitting structure 120, 121, respectively. In particular, the first conductive oxide electrode extensions 182, 183, 184, and 185 may be located on at least a portion of the area around the mesa 120m and may be disposed along at least some of the sides of the mesa 120m have. Accordingly, the first conductive oxide electrode extensions 182, 183, 184, and 185 may at least partially surround the mesa 120m, and in various embodiments, the first conductive oxide electrode extensions 182, 183 , 184, and 185 may form a closed curve surrounding the mesa 120m. The first conductive oxide electrode extensions 182, 183, 184, and 185 are disposed around the mesa 120m, thereby improving the current dispersion efficiency of the light emitting device.
Also, in some embodiments, the first conductive oxide electrode extensions 182, 183, 184, and 185 may extend from the first conductive oxide electrode pad 181. At this time, the first conductive oxide electrode pad 181 may be electrically connected to the metal electrode pad 151. The metal electrode pad 151 may be positioned on the first conductive oxide electrode pad 181. The area of the metal electrode pad 151 may be smaller than the area of the first conductive oxide electrode pad 181.
Hereinafter, the structure of the first electrode 200 in the light emitting device according to the present embodiment will be described in more detail with reference to FIGS. 1 to 7. FIG. However, the structure of the first electrode 200 according to the present embodiment is merely an example, and the first electrode 200 is not limited according to the structure of the illustrated light emitting device.
First, the metal first electrode 200 including the metal electrode extension 153 and the metal electrode pad 151 will be described. In this embodiment, the metal first electrode 200 is located on the mesa 120m, and an insulating layer 170 may be interposed between the metal first electrode 200 and the mesa 120m. At this time, the insulating layer 170 may include an insulating material, for example, SiO 2 , SiN x , distributed Bragg reflectors in which layers having different refractive indexes are repeatedly stacked, and the like. At this time, the insulating layer 170 may cover a part of the side surface of the mesa 120m. The insulating layer 170 may include at least one opening that at least partially exposes an upper surface of the first conductive type semiconductor layer 121 exposed in the groove 120g of the mesa 120m.
In addition, a part of the metal electrode extension portion 153 can be in contact with the first conductive type semiconductor layer 121. The metal electrode extension 153 may include an extension contact portion 155 and may be in ohmic contact with the first conductive semiconductor layer 121 through the extension contact portion 155. The metal electrode pad 151 is located on the insulating layer 170 and may not be in contact with the first conductive type semiconductor layer 121. However, the present invention is not limited thereto, and in various embodiments, a part of the metal electrode pad 151 may be formed in ohmic contact with the first conductive type semiconductor layer 121.
The metal electrode extension part 153 is located on the insulating layer 170 and a part of the metal electrode extension part 153 overlaps with at least one groove 120g in the vertical direction. The metal electrode extended portion 153 includes an extended portion contact portion 155 that is in contact with the first conductive type semiconductor layer 121. The extended portion contact portion 155 includes the first conductive type semiconductor layer 121, And ohmic contacts. The extension contact portion 155 forms an electrical connection with the first conductivity type semiconductor layer 121 exposed by the at least one groove 120g and the remaining portion of the metal electrode extension 153 is electrically connected to the insulation layer 170 The electrons are moved to the first conductive type semiconductor layer 121 through the extended portion contact portion 155 when the light emitting device is driven. That is, current is conducted through the extended portion contact portion 155.
When the first electrode 200 is an n-type electrode, the electrons move in a direction from the first electrode 200 toward the second electrode 160, The density of electrons injected into the first conductivity type semiconductor layer 121 may vary according to the distance from the metal electrode pad 151. [ That is, the density of electrons injected from the portion of the metal electrode extension 153 located relatively closer to the metal electrode pad 151 is relatively far from the metal electrode extension 151 in the metal electrode extension 153 Is higher than the density of electrons injected from the portion. Therefore, when the entire metal electrode extension 153 contacts the first conductive type semiconductor layer 121, the current spreading performance may be lowered.
The remaining portions of the metal electrode extension portion 153 are electrically connected to the first conductive semiconductor layer 121 through the extended portion contact portion 155 of the metal electrode extension portion 153, And is insulated from the first conductivity type semiconductor layer 121 by the layer 170. Thus, electron injection can be made through the extension contact portion 155, so that the electron injection density at the plurality of extension contact portions 155 can be maintained substantially similar. Accordingly, electrons can be smoothly injected even through a portion of the metal electrode extension 153 that is far from the metal electrode pad 151, thereby improving the current dispersion efficiency of the light emitting device.
The extension contact portions 155 may correspond to the position and number of the grooves 120g so that the spacing distance of the extension contact portions 155 may be substantially the same and the extension contact portions 155 may be formed on one side of the light emitting element Lt; / RTI > For example, the extension contact portions 155 may be located adjacent the second side 102 of the light emitting element. However, the present invention is not limited thereto, and the extension contact portions 155 may be formed along at least two sides of the light emitting element.
On the other hand, the insulating layer 170 located under the extended portion contact portion 155 can have a width larger than the line width of the metal electrode extending portion 153, and the distance between the mesa 120m and the metal electrode extending portion 153 Thereby more effectively preventing conduction of electricity. Further, a portion of the insulating layer 170 located under the metal electrode extension portion 153 may be located in a region defined by the side surface of the mesa 120m. Therefore, as shown in the figure, a part of the upper surface of the mesa 120m may be exposed around the portion of the insulating layer 170 located under the metal electrode extension portion 153. When the mesa 120m includes a concavo-convex pattern (not shown) formed on a side surface thereof, the concavo-convex pattern is exposed without being covered with the insulating layer 170. [ However, the present invention is not limited thereto.
In addition, the insulating layer 170 may at least partially cover the side surface of the groove 120g. Further, the insulating layer 170 may be formed to further cover the periphery of the upper portion of the groove 120g. As shown, the insulating layer 170 may further cover the upper surface of the mesa 120m around the groove 120g. Accordingly, it is possible to prevent the static electricity from being conducted to the second conductive type semiconductor layer 125 through the upper surface of the mesa 120m around the groove 120g, thereby improving the immunity of the light emitting element to the electrostatic discharge.
In addition, the insulating layer 170 may be spaced apart from the second conductive oxide electrode 140. As shown, the insulating layer 170 located on the mesa 120m may be spaced apart from the second conductive oxide electrode 140. The insulating layer 170 may be formed during the formation process or may have a microcurrent to conduct due to defects contained therein. When the insulating layer 170 is in contact with the second conductive oxide electrode 140 having a relatively low electrical resistance, the leakage current flowing between the second conductive oxide electrode 140 and the first electrode 200 through the insulating layer 170 Current may be generated. Accordingly, the insulating layer 170 and the second conductive oxide electrode 140 are spaced apart from each other, thereby preventing the occurrence of leakage current through the insulating layer 170, thereby improving the electrical characteristics of the light emitting device.
The metal electrode 150 may serve to supply external power to the first conductivity type semiconductor layer 121 and may include a metal material such as Ti, Pt, Au, Cr, Ni, Al, . In addition, the metal electrode 150 may be a single layer or a multilayer. The metal electrode pad 151 can be connected to a wire (not shown), so that external power can be supplied to the light emitting element through the wire.
The first conductive oxide electrode 180 may include first conductive oxide electrode extensions 182, 183, 184, and 185 extending from the first electrode pads 151 and 181. The first conductive oxide electrode extension 180 may further include a first conductive oxide electrode pad 181. In this case, the first conductive oxide electrode extension 182, 183, 184, And may extend from the oxide electrode pad 181.
The first conductive oxide electrode 180 may include a conductive material having light transmittance. In this embodiment, the first conductive oxide electrode 180 may include a light-transmitting conductive oxide, and may include, for example, ZnO including a dopant. The dopant may be at least one selected from the group consisting of Ag, indium, tin, zinc, cadmium, gallium, aluminum, magnesium, titanium, At least one of Ti, Mo, Ni, Cu, Au, Pt, Rh, Ir, Ru, . ≪ / RTI > In one embodiment, the first conductive oxide electrode 180 may be formed of Ga-doped ZnO, i.e., GZO.
ZnO or GZO included in the first conductive oxide electrode 180 may be formed through various methods. The ZnO or GZO may be formed through various known methods, for example, by sputtering, atomic layer deposition, vacuum deposition, electrochemical deposition, pulse laser deposition, or the like. The first conductive oxide electrode 180 may include at least one of single crystal ZnO, single crystal GZO, polycrystalline ZnO, polycrystalline GZO, amorphous ZnO, and amorphous GZO. In addition, the first conductive oxide electrode 180 may be formed of a single layer or multiple layers. For example, the first conductive oxide electrode 180 may be composed of multiple layers including an undoped ZnO layer and a doped ZnO (e.g., GZO) layer.
The first conductive-oxide-electrode extension portions 182, 183, 184, and 185 may at least partially be in electrical contact with the first conductive-type semiconductor layer 121, It can also be contacted. The first conductive-oxide electrode extension portions 182, 183, 184 and 185 are located on the exposed region of the first conductive type semiconductor layer 121 of the light-emitting structure 120, 121). For example, the first conductive oxide electrode extensions 182, 183, 184, and 185 are located on the upper surface of the first conductive type semiconductor layer 121 exposed at the periphery of the mesa 120m, It can be partially surrounded. At this time, the first conductive oxide electrode extensions 182, 183, 184, and 185 are spaced apart from the side surfaces of the mesa 120m. The first conductive oxide electrode extensions 182, 183, 184, and 185 may be spaced apart from the sides of the first conductive type semiconductor layer 121, but the present invention is not limited thereto. In some embodiments, The side surfaces of the first conductive oxide electrode extensions 182, 183, 184 and 185 may be formed to be substantially flush with the side surfaces of the first conductive type semiconductor layer 121.
In one embodiment, the first conductive oxide electrode extensions 182, 183, 184, and 185 may include a first portion 182, a second portion 183, a third portion 182, A second portion 184 and a fourth portion 185.
The first portion 182 extends from the first electrode pads 151 and 181 and extends in the direction toward the fourth side 104 of the light emitting device while the third side 120c of the mesa 120m, And the third side 103. The first portion 182 may extend in a direction different from the direction in which the metal electrode extension portion 153 extends from the metal electrode pad 151. For example, And may be opposite to the direction in which the portion 153 extends. The first portion 182 is connected to the first conductive oxide electrode pad 181 and the first conductive oxide electrode pad 181 is located under the metal electrode pad 151 and electrically connected to the metal electrode pad 151 . At this time, the first conductive oxide electrode pad 181 is formed to have a wider area than the metal electrode pad 151, so that the metal electrode pad 151 can be stably formed. An insulating layer 170 may be interposed between the first conductive oxide electrode pad 181 and the second conductive type semiconductor layer 125. A portion of the first conductive oxide electrode pad 181 may extend along the side surface of the mesa 120m so that a portion of the first conductive oxide electrode pad 181 is exposed to the periphery of the mesa 120m The first conductive semiconductor layer 121 may be in contact with the first conductive semiconductor layer 121. However, the first conductive oxide electrode pad 181 may be omitted. In this case, the first portion 182 is electrically connected to the metal electrode pad 151.
The second portion 183 may extend from the first portion 182 and extend along the fourth side 104 of the light emitting element. The second portion 183 may be located between the fourth side 120d of the mesa 120m and the fourth side 104 of the light emitting device. The third portion 184 may extend from the second portion 183 and extend along the first side 101 of the light emitting element. The third portion 184 may be positioned between the first side 120a of the mesa 120m and the first side 101 of the light emitting device. The fourth portion 185 may also extend from the third portion 184 and extend along the second side 102 of the light emitting element. The fourth portion 185 may be located between the second side 120b of the mesa 120m and the second side 102 of the light emitting device. In this embodiment, the fourth portion 185 does not extend to the portion where the metal electrode extension portion 153 is located. That is, the fourth portion 185 may be formed along a portion of the second side 102 of the light emitting device so as not to extend to the periphery of the portion where the groove 120g of the mesa 120m is formed.
The first conductive oxide electrode extension portions 182, 183, 184 and 185 are formed to be electrically connected to the first conductive type semiconductor layer 121 exposed at the periphery of the mesa 120m, Thereby smoothly distributing the current to the peripheral portion of the outer periphery of the substrate. More specifically, referring to FIG. 3, the current applied during driving the light emitting device is mainly transferred through the first electrode 200 and the second electrode 160. This increases the probability that the current is concentrated in the current path region CPR including the set of the lines L corresponding to the straight path between the first electrode 200 and the second electrode 160, CPR), the probability that the current is dispersed is low. In this embodiment, the first electrode 200 is electrically connected to the first conductive type semiconductor layer 121 through the extended portion contact portion 155, and therefore, as shown in FIG. 3, Current may not be smoothly supplied to the peripheral regions of the first side surface 101, the third side surface 103, and the fourth side surface 104. According to this embodiment, the first conductive oxide electrode extensions 182, 183, 184, and 185 are formed to at least partially surround the mesa 120m so that the first conductive oxide electrode extensions 182, 183, 184, The current path can be smoothly formed even in a region including a set of lines corresponding to the linear path between the first electrode 185 and the second electrode 160. Accordingly, the current dispersion efficiency of the light emitting device can be improved, and the non-light emitting region of the active layer 123 can be minimized to improve the light emitting efficiency of the light emitting device. Further, the forward current (Vf) of the light emitting element can be reduced by making the current evenly distributed in the horizontal direction.
The first conductive oxide electrode extensions 182, 183, 184 and 185 are light transmissive so that light emitted from the light emitting structure 120 is transmitted through the first conductive oxide electrode extensions 182, 183, 184 and 185, And can be prevented from being lost. When the first electrode has a metal electrode extension portion and the metal electrode extension portion is arranged as the first conductive oxide electrode extension portions 182, 183, 184, and 185 of the present embodiment, Even if the current dispersion efficiency is increased due to the optical loss caused by the metal electrode extension portion, the optical output is rather lowered. On the other hand, the light emitting device of the present embodiment includes the first conductive oxide electrode extensions 182, 183, 184, and 185, thereby improving the electrical characteristics of the light emitting device and preventing the loss of light loss. The output can be improved.
In particular, the first conductive oxide electrode extensions 182, 183, 184, and 185 may include ZnO or GZO having excellent light transmittance, or may be formed of ZnO or GZO, and the first conductive oxide electrode extensions 182, 183, 184, and 185 may be relatively thick, light absorption and light loss by the first conductive-oxide-electrode extended portions 182, 183, 184, and 185 may be minimized. For example, the first conductive-oxide electrode extensions 182, 183, 184, and 185 may have a light transmittance of 90% or more, even if the thickness is 200 nm or more and 800 nm or more. The first conductive-oxide-electrode extension portions 182, 183, 184, and 185 may have a relatively large thickness, so that the first conductive-oxide-electrode extension portions 182, 183, 184, Can be more smoothly dispersed. That is, according to this embodiment, a light emitting device having improved electrical characteristics and optical characteristics is provided through the first conductive oxide electrode extensions 182, 183, 184, and 185 including ZnO or GZO.
Referring again to FIGS. 1 to 7, the first conductive oxide electrode extensions 182, 183, 184, and 185 may have line widths different from those of the metal electrode extensions 151. The line width W1 of the metal electrode extension portion 151 may be larger than the line width W2 of the first conductive oxide electrode extension portions 182, 183, 184, Since the metal electrode extension portion 151 is generally patterned through a lift-off process, there is a limit to reducing the line width W1 in consideration of process margin and the like. Since the first conductive oxide electrode extensions 182, 183, 184 and 185 are patterned through the etching process, the line width W2 that is smaller than the line width W1 of the metal electrode extension 151, Lt; / RTI > Therefore, the area of the first conductivity type semiconductor layer 121 exposed around the mesa 120m for forming the first conductive oxide electrode extensions 182, 183, 184, and 185 can be minimized, It is possible to minimize the reduction in the area of the luminescent area due to the decrease in area of the mesa 120m. However, the present invention is not limited thereto.
In various embodiments, the arrangement of the first conductive oxide electrode 180 can be variously modified. 10 to 24 are views for explaining the first conductive oxide electrode 180 in the light emitting device according to various embodiments.
10 to 14, the first conductive oxide electrode extensions 182, 183, 184, and 185 of the first conductive oxide electrode 180 may be formed to surround the mesa 120m. Accordingly, the first conductive oxide electrode extensions 182, 183, 184, and 185 may form a closed curve surrounding the mesa 120m. 10 and 11, the fourth portion 185 may also be formed on the upper surface of the first conductive semiconductor layer 121 exposed around the grooves 120g of the mesa 120m. The fourth portion 185 extends along the second side 102 of the light emitting element and extends to the third side 103. The light emitting device of this embodiment includes a plurality of first portions 182 and the two first portions 182 are electrically connected to the second side surface 102 and the fourth side surface 104 As shown in Fig. Accordingly, the direction in which at least one of the plurality of first portions 182 extends may be substantially the same as the direction in which the metal electrode extension portion 153 extends. The first portion 182 may be connected to the fourth portion 185 so that the first conductive oxide electrode extensions 182, 183, 184 and 185 are formed as a closed curve surrounding the periphery of the mesa 120m. .
According to this embodiment, the first conductive-oxide-electrode extensions 182, 183, 184, and 185 form a closed curve, and the first conductive-oxide-electrode extensions 182, 183, 184, As shown in Fig. Since the first conductive oxide electrode extensions 182, 183, 184, and 185 are formed of a conductive oxide such as ZnO or GZO, the first conductive oxide electrode extensions 182, 183, 184, and 185 may be peeled off at the end portions thereof. In this embodiment, the first conductive-oxide-electrode extensions 182, 183, 184, and 185 do not include these ends, and the first conductive-oxide-electrode extensions 182, 183, 184, The reliability of the device can be prevented from lowering.
15 to 19, the first conductive-oxide electrode extensions 182, 183, 184, and 185 of the first conductive-oxide electrode 180 are formed on the side surfaces of the first conductive-type semiconductor layer 121, that is, substantially flush with the sides of the first and second electrodes 121, 121. Accordingly, the line width W3 of the first conductive oxide electrode extensions 182, 183, 184, and 185 according to the present embodiment is the same as that of the first conductive oxide electrode extensions 182 , 183, 184, 185). The line width W3 of the first conductive oxide electrode extensions 182, 183, 184 and 185 may be greater than the line width W1 of the metal electrode extension 153. [
According to the present embodiment, the first conductive oxide electrode extensions 182, 183, 184 and 185 are formed to have a relatively larger line width W3 so that the first conductive oxide electrode extensions 182, 183, 184, 185 and the first conductive semiconductor layer 121 are in contact with each other. Therefore, current supply through the first conductive-oxide-electrode extended portions 182, 183, 184, and 185 is further facilitated, thereby further improving the current dispersion efficiency. In addition, the first conductive oxide electrode extensions 182, 183, 184, and 185 have a relatively larger line width W3, so that the first conductive oxide electrode extensions 182, 183, 184, 185) can be reduced.
20 to 24, at least a portion of the first conductive oxide electrode extensions 182, 183, 184, 185, 186 are in contact with at least a portion of the metal electrode extension 153 . The light emitting device of the present embodiment may include first conductive oxide electrode extensions 182, 183, 184, 185, 186 that further include a fifth portion 186. The fifth portion 186 is located under the metal electrode extension 153 and can contact the metal electrode extension 153. A portion of the fifth portion 186 may be interposed between the insulating layer 170 and the metal electrode extension 153. At least a portion of the fifth portion 186 may be interposed between the extended portion contact portion 155 and the first conductive type semiconductor layer 121 exposed in the groove 120g. Thus, the extended portion contact portion 155 is not in direct ohmic contact with the first conductivity type semiconductor layer 121, and the fifth portion 186 forms an ohmic contact with the first conductivity type semiconductor layer 121 The fifth portion 186, and the metal electrode extension portion 153, respectively.
According to the present embodiment, the metal electrode extension 153 is located on the first conductive oxide electrode extensions 182, 183, 184, 185, 186, particularly on the fifth portion 186. When the metal electrode extension 153 is located on the surfaces of the first conductive oxide electrode extensions 182, 183, 184, 185 and 186 formed of the conductive oxide, the insulating layer 170 or the light emitting structure 120 The bonding property is superior to the case where the metal electrode extension portion 153 is located on the surface. Therefore, the metal electrode extension 153 can be stably formed, and the probability of peeling off is reduced, thereby improving the stability and reliability of the light emitting device. In addition, depending on the material forming the metal electrode extension part 153 and the materials for forming the first conductive-oxide electrode extensions 182, 183, 184, 185, and 186, The contact characteristics may be changed. In some embodiments, the contact resistance between the metal electrode extension 153 and the first conductive type semiconductor layer 121 is greater than the contact resistance between the first conductive oxide electrode extensions 182, 183, 184, 185, 186 and the first conductive Type semiconductor layer 121 may be higher than the contact resistance with the semiconductor layer. In this case, the first conductive-oxide electrode extensions 182, 183, 184, 185, and 186 may be connected to the first conductive-type semiconductor layer 121 and the metal electrode extension 153, The electrical contact characteristics between the first electrode 200 and the first conductivity type semiconductor layer 121 can be improved.
Referring again to FIGS. 1 to 7, the arrangement of the second electrode extension 163 and the size and position of the groove 120g of the mesa 120m can be controlled in consideration of the current dispersion efficiency of the light emitting device . The distance A1 from the metal electrode extension 153 extending along the second side 102 of the light emitting device to the second electrode extension 163 may be set to a distance from the end of the second electrode extension 163 Is greater than the distance A2 to the one-electrode pads 151 and 181. The second electrode extension part 163 extends in the direction toward the first electrode pads 151 and 181 and the metal electrode extension part 153 extending along the second electrode extension part 163 and the second side face 102 ) Is kept substantially constant, it is possible to improve the current dispersion efficiency. Further, by forming A2 smaller than A1, the current density is lowered around the end of the second electrode extension portion 163, thereby preventing the current dispersion efficiency from being lowered. The distance A3 from the end of the second electrode extension part 163 to the outer edge of the second conductive oxide electrode 140 (the edge arranged along the fourth side face 104) (The edge disposed along the fourth side face 104) of the second conductive oxide electrode 140 from the side of the second conductive oxide electrode 140. [ At this time, A3 may be about 50 to 60 mu m. In addition, the second electrode extension 163 may be biased to the fourth side 104 side of the second side 102 of the light emitting device. As shown, the second electrode extension 163 is positioned closer to the fourth side 104 than the second side 102 of the light emitting device, and the longitudinal center line A-A 'passing through the center of the light emitting device, The second electrode extension 163 may be spaced a predetermined distance A4. The A4 may be about 14 to 18 mu m. The metal electrode extension portion 153 is located adjacent to the second side surface 102 so that the second electrode extension portion 163 is disposed closer to the fourth side surface 104 than the second side surface 102, Dispersion can be improved.
The width of the portion where the extended portion contact portion 1555 of the metal electrode extension portion 153 contacts the first conductive type semiconductor layer 121, that is, the width B1 of the opening portion of the insulating layer 170, May be smaller than the interval B2 between the openings of the first electrode 170. B2 can be adjusted to be three times larger than B1, and in this case, the dispersibility of the current injected through the extension contact portion 155 can be further improved.
26 is an exploded perspective view for explaining an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.
Referring to FIG. 26, the illumination device according to the present embodiment includes a diffusion cover 1010, a light emitting device module 1020, and a body part 1030. The body 1030 may receive the light emitting module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the light emitting module 1020.
The body part 1030 is not limited as long as it can receive and support the light emitting element module 1020 and supply the electric power to the light emitting element module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [
The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the light emitting device module 1020, and may include at least one IC chip. The IC chip may control, convert, or control the characteristics of the power supplied to the light emitting device module 1020. The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 . The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 1037 is electrically connected to the power supply unit 1033 in the power supply case 1035 so that external power can be supplied to the power supply unit 1033.
The light emitting element module 1020 includes a substrate 1023 and a light emitting element 1021 disposed on the substrate 1023. The light emitting device module 1020 is provided on the body case 1031 and can be electrically connected to the power supply device 1033.
The substrate 1023 is not limited as long as it is a substrate capable of supporting the light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [ The light emitting device 1021 may include at least one of the light emitting devices according to the embodiments of the present invention described above.
The diffusion cover 1010 is disposed on the light emitting element 1021 and may be fixed to the body case 1031 to cover the light emitting element 1021. [ The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.
27 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
The display device of this embodiment includes a display panel 2110, a backlight unit for providing light to the display panel 2110, and a panel guide for supporting the lower edge of the display panel 2110.
The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate.
The backlight unit includes a light source module including at least one substrate and a plurality of light emitting elements (2160). Furthermore, the backlight unit may further include a bottom cover 2180, a reflective sheet 2170, a diffusion plate 2131, and optical sheets 2130.
The bottom cover 2180 may open upward to accommodate the substrate, the light emitting element 2160, the reflective sheet 2170, the diffusion plate 2131, and the optical sheets 2130. Further, the bottom cover 2180 can be engaged with the panel guide. The substrate may be disposed below the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface. In addition, the substrate may be formed in a plurality, and the plurality of substrates may be arranged in a side-by-side manner, but not limited thereto, and may be formed of a single substrate.
The light emitting device 2160 may include at least one of the light emitting devices according to the embodiments of the present invention described above. The light emitting elements 2160 may be regularly arranged in a predetermined pattern on the substrate. In addition, a lens 2210 is disposed on each light emitting element 2160, so that the uniformity of light emitted from the plurality of light emitting elements 2160 can be improved.
The diffusion plate 2131 and the optical sheets 2130 are placed on the light emitting element 2160. The light emitted from the light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130.
As described above, the light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.
28 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment is applied to a display device.
The display device including the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit disposed on the back surface of the display panel 3210 and configured to emit light. The display device further includes a frame 240 supporting the display panel 3210 and receiving the backlight unit and covers 3240 and 3280 surrounding the display panel 3210.
The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate. The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit.
The backlight unit for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the top surface, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 that converts light into light. The backlight unit of the present embodiment includes optical sheets 3230 positioned on the light guide plate 3250 and diffusing and condensing light, light directed downward of the light guide plate 3250 disposed below the light guide plate 3250 And a reflective sheet 3260 that reflects light toward the display panel 3210. [
The light source module includes a substrate 3220 and a plurality of light emitting devices 3110 disposed on a surface of the substrate 3220 at predetermined intervals. The substrate 3220 is not limited as long as it supports the light emitting element 3110 and is electrically connected to the light emitting element 3110, for example, it may be a printed circuit board. The light emitting device 3110 may include at least one light emitting device according to the embodiments of the present invention described above. The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. Through the light guide plate 3250 and the optical sheets 3230, the point light source emitted from the light emitting elements 3110 can be transformed into a surface light source.
As described above, the light emitting device according to the embodiments of the present invention can be applied to the edge display device as in the present embodiment.
29 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.
29, the head lamp includes a lamp body 4070, a substrate 4020, a light emitting element 4010, and a cover lens 4050. Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.
Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070. The substrate 4020 is not limited as long as it can support the light emitting element 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [ Also, the light emitting device 4010 may be electrically connected to an external power source through the conductive pattern of the substrate 4020. In addition, the light emitting device 4010 may include at least one light emitting device according to the embodiments of the present invention described above.
The cover lens 4050 is located on the path through which light emitted from the light emitting element 4010 travels. For example, as shown, the cover lens 4050 may be disposed apart from the light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is to be emitted from the light emitting device 4010 . The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted. The connecting member 4040 may serve as a light guide for fixing the cover lens 4050 to the substrate 4020 and for arranging the light emitting element 4010 to provide the light emitting path 4045. [ At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate heat generated when the light emitting device 4010 is driven.
As described above, the light emitting device according to the embodiments of the present invention can be applied to a head lamp, particularly, a headlamp for a vehicle as in the present embodiment.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Variations and changes are possible.
