KR20160112244A - Light emitting device and light emitting diode - Google Patents

Light emitting device and light emitting diode Download PDF

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Publication number
KR20160112244A
KR20160112244A KR1020150037560A KR20150037560A KR20160112244A KR 20160112244 A KR20160112244 A KR 20160112244A KR 1020150037560 A KR1020150037560 A KR 1020150037560A KR 20150037560 A KR20150037560 A KR 20150037560A KR 20160112244 A KR20160112244 A KR 20160112244A
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KR
South Korea
Prior art keywords
light emitting
electrode
emitting cell
contact electrode
cell
Prior art date
Application number
KR1020150037560A
Other languages
Korean (ko)
Inventor
김종규
이소라
윤여진
Original Assignee
서울바이오시스 주식회사
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Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020150037560A priority Critical patent/KR20160112244A/en
Priority to CN201680010257.2A priority patent/CN107223285B/en
Priority to DE112016000731.0T priority patent/DE112016000731T5/en
Priority to CN201910953376.7A priority patent/CN110690242B/en
Priority to CN201911070837.2A priority patent/CN110854250B/en
Priority to EP16749413.7A priority patent/EP3258507A2/en
Priority to CN201911037711.5A priority patent/CN110676286B/en
Priority to PCT/KR2016/001255 priority patent/WO2016129873A2/en
Priority to CN201910175807.1A priority patent/CN110061027B/en
Priority to CN201911073767.6A priority patent/CN110690249B/en
Priority to CN201911074035.9A priority patent/CN110690250A/en
Publication of KR20160112244A publication Critical patent/KR20160112244A/en
Priority to US15/409,306 priority patent/US10438992B2/en
Priority to US16/594,239 priority patent/US11282892B2/en
Priority to US17/697,410 priority patent/US20220208851A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting device, and a light emitting device according to an embodiment of the present invention includes: a first light emitting cell; At least one second light emitting cell disposed on the same plane as the first light emitting cell and electrically connected to the first light emitting cell; A first electrode formed on the first light emitting cell or the one or more second light emitting cells and electrically connected to one of the first light emitting cell and the one or more second light emitting cells; A second electrode formed on the first light emitting cell or the one or more second light emitting cells and electrically connected to the other of the first light emitting cell and the one or more second light emitting cells; And a heat dissipation pad formed on the first light emitting cell and the at least one second light emitting cell and radiating heat generated from the first light emitting cell and the at least one second light emitting cell, And the at least one second light emitting cell may be disposed to surround the first light emitting cell. According to the present invention, by disposing one of the plurality of light emitting cells included in the light emitting element at the center of the light emitting element and arranging the other light emitting cells around the center of the light emitting cell, The light intensity can be improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode (LED)

The present invention relates to a light emitting device and a light emitting diode, and more particularly, to a light emitting device and a light emitting diode having improved light efficiency of the light emitting device.

In recent years, there has been an increasing demand for a large-area flip chip type light emitting device having excellent heat dissipation efficiency, with an increasing demand for a small high power light emitting device. As the electrode is directly bonded to the secondary substrate, the flip chip type light emitting device has a merit that heat dissipation efficiency is higher than that of a horizontal type light emitting device because a wire for supplying external power is not used. That is, even when a high-density current is applied to the flip chip type light emitting device, the heat is transferred to the secondary substrate side, so that the flip chip type light emitting device can be used as a high output light emitting source.

In order to reduce the size of the light emitting device, there is an increasing demand for a chip scale package in which the light emitting device itself is used as a package by omitting the step of separately packaging the light emitting device into a housing or the like. The flip chip type light emitting device can be used in a chip scale package as described above because the electrode can function similarly to the lead of the package.

At this time, a plurality of light emitting cells in the form of a chip scale package are connected in series or in parallel and disposed on the substrate, whereby a light emitting device can be manufactured. When a plurality of light emitting cells are arranged to realize a light emitting device, a region where light is not emitted between a plurality of light emitting cells is formed, which results in poor light efficiency of light emitted from the center of the light emitting device.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting device and a light emitting device which improve lightness of light emitted from the center of a light emitting device even when a plurality of light emitting cells are connected in series, Diode.

A light emitting device according to an embodiment of the present invention includes: a first light emitting cell; At least one second light emitting cell disposed on the same plane as the first light emitting cell and electrically connected to the first light emitting cell; A first electrode formed on the first light emitting cell or the one or more second light emitting cells and electrically connected to one of the first light emitting cell and the one or more second light emitting cells; A second electrode formed on the first light emitting cell or the one or more second light emitting cells and electrically connected to the other of the first light emitting cell and the one or more second light emitting cells; And a heat dissipation pad formed on the first light emitting cell and the at least one second light emitting cell and radiating heat generated from the first light emitting cell and the at least one second light emitting cell, And the at least one second light emitting cell may be disposed to surround the first light emitting cell.

At this time, at least three planar surfaces of the heat-radiating pad may be exposed to the outside.

Each of the first light emitting cell and the at least one second light emitting cell includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer A light emitting structure comprising; A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And an insulating layer covering a part of the first contact electrode and the second contact electrode for insulation between the first contact electrode and the second contact electrode, wherein the first electrode and the second electrode are respectively connected to the first contact electrode And the second contact electrode.

A first opening portion formed between the first and second contact electrodes to cover a part of the second contact electrode and partially exposing the first conductivity type semiconductor layer and the second contact electrode, A first insulating layer having two openings; And a second insulating layer formed to cover a part of the first contact electrode partially covering the first insulating layer and having a third opening and a fourth opening partially exposing the first contact electrode and the second contact electrode, . ≪ / RTI >

At least one of the first electrode, the second electrode, and the heat dissipation pad may be formed on the second insulating layer. The first electrode may be electrically connected to the first contact electrode through the third opening, and the second electrode may be electrically connected to the second contact electrode through the fourth opening.

The first electrode, the second electrode, and the heat radiating pad may include at least one of Cu, Pt, Au, Ti, Ni, Al, and Ag. And can be spaced apart.

The first light emitting cells may be circular or polygonal having four or more angles.

Meanwhile, the light emitting diode according to an embodiment of the present invention includes a first light emitting cell, at least one second light emitting cell arranged on the same plane as the first light emitting cell, a first light emitting cell and a second light emitting cell A first electrode and a second electrode electrically connected to the first light emitting cell and the second light emitting cell, respectively, and a heat radiation pad formed on the first light emitting cell and the one or more second light emitting cells to radiate heat generated in the at least one light emitting cell device; And a printed circuit board on which the light emitting device is mounted, the printed circuit board including: a substrate body for dispersing heat transmitted through the heat radiation pad; And a lead portion formed on the substrate body and electrically connected to the first and second electrodes.

At this time, the substrate body may be in contact with the heat radiating pad, and the printed circuit board may further include a heat radiating part formed on the substrate body and in contact with the heat radiating pad. Here, the lead portion and the heat dissipating portion may be insulated from each other.

The printed circuit board may further include an insulating portion interposed between the substrate body and the lead portion.

The light emitting device may further include a lens disposed above the light emitting device and emitting light emitted from the light emitting device. The lens may include a phosphor for wavelength-converting light emitted from the light emitting device.

According to the present invention, by disposing one of the plurality of light emitting cells included in the light emitting element at the center of the light emitting element and arranging the other light emitting cells around the center of the light emitting cell, The light intensity can be improved.

In addition, in addition to the electrode for applying external electric power to the light emitting cell, the light emitting element is provided with a heat dissipating pad for dissipating the heat generated in the light emitting cell, so that the heat generated from the light emitting element can be more efficiently dissipated.

1 is a bottom view showing a lower surface of a light emitting device according to an embodiment of the present invention.
Figure 2 is a cross-sectional view taken along the perforations AA ', BB' and CC 'of Figure 1.
3 is a view illustrating a light emitting diode according to an embodiment of the present invention.
4 is a view illustrating a light emitting diode to which a light emitting device and a dome-shaped lens according to an embodiment of the present invention are applied.
5 is a view illustrating a light emitting diode using a light emitting device and a concave lens according to an embodiment of the present invention.
6 is a view illustrating a light emitting diode to which a light emitting device, a printed circuit board, and a lens according to an embodiment of the present invention are applied.
7 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.
8 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
9 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.
10 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

Preferred embodiments of the present invention will be described more specifically with reference to the accompanying drawings.

FIG. 1 is a bottom view of a lower surface of a light emitting device according to an embodiment of the present invention, and FIGS. 2 (a), 2 (b) and 2 (c) ', BB' and CC ', respectively.

Referring to FIGS. 1 and 2, a light emitting device 100 according to an embodiment of the present invention includes first to fourth light emitting cells C1, C2, C3, and C4, a first electrode 39, An electrode 41 and a heat-radiating pad 43.

As shown in Fig. 1, in an embodiment of the present invention, it is explained that four light emitting cells C1, C2, C3 and C4 are used, the number of light emitting cells is smaller or larger .

The third light emitting cell C3 of the first through fourth light emitting cells C1, C2, C3, and C4 is connected to the light emitting element C1, And the remaining light emitting cells C1, C2, and C4 are arranged to surround the third light emitting cells C3. The first through fourth light emitting cells C1, C2, C3 are arranged such that a current applied through the first and second electrodes 39, 41 sequentially flows from the first light emitting cell C1 to the fourth light emitting cell C4. , C4) are connected in series.

In this case, the planar shape of the light emitting device 100 is a quadrangular shape, and the planar shape of the third light emitting cell C3 is circular. The shape of the light emitting device 100 and the shapes of the third light emitting cells C3, May be variously modified as required, such as a triangular shape, a rectangular shape, a hexagonal shape, and an octagonal shape.

The first light emitting cell C1, the second light emitting cell C2 and the fourth light emitting cell C4 are formed in a rectangular shape in a state in which the circular third light emitting cell C3 is disposed at the center of the rectangular shape of the light emitting device 100, The light emitting device 100 is formed in a different shape.

In the embodiment of the present invention, the arrangement of the first to fourth light emitting cells is arranged on the same plane as shown in Fig. 1. For the sake of convenience of description, upper, lower, left, and right are defined with reference to the drawing shown in FIG.

The first light emitting cell C1 is disposed on the upper right side of the third light emitting cell C3 and the second light emitting cell C2 is disposed on the upper left side of the third light emitting cell C3. And the fourth light emitting cell C4 is disposed on the lower side of the third light emitting cell C3. Accordingly, the first light emitting cell C1 and the second light emitting cell C2 may be formed in a line-symmetrical shape.

The second light emitting cell C2 is electrically connected to the first light emitting cell C1 and electrically connected to the third light emitting cell C3 and the third light emitting cell C3, C3 at the upper left position. The second light emitting cell C2 is spaced apart from the fourth light emitting cell C4 by a predetermined distance to be electrically insulated.

The fourth light emitting cell C4 is electrically connected to the third light emitting cell C3 and is spaced apart from the first and second light emitting cells C1 and C2 by a predetermined distance.

Although the first through fourth light emitting cells C1, C2, C3, and C4 are connected in series in the exemplary embodiment of the present invention, the first through fourth light emitting cells C1, C2, C3, and C4 may be connected in parallel or in series.

The first and second electrodes 39 and 41 are electrically connected to the fourth and fourth light emitting cells C4 and C4 in the state where the first to fourth light emitting cells C1 to C3 are disposed, C1. The first electrode 39 is electrically connected to the fourth light emitting cell C4 and the second electrode 41 is electrically connected to the first light emitting cell C1.

In an embodiment of the present invention, the first and second electrodes 39 and 41 are formed in a triangular shape on the edge sides of the plurality of light emitting cells C1, C2, C3 and C4, respectively, ) And the second electrode 41 may be formed in a hexagonal shape. At this time, the shapes of the first and second electrodes 39 and 41 and the shape of the heat radiation pad 43 are not limited to those shown in the drawings, and can be variously modified as needed. The first electrode 39, the second electrode 41, and the heat radiating pad 43 may be spaced apart from each other by a predetermined distance.

As described above, the third light emitting cell C3 is disposed at the center of the light emitting device 100, and the first light emitting cell, the second light emitting cell, and the fourth light emitting cells C1, C2, The light emitting efficiency of the center of the light emitting device 100 can be increased by increasing the current density of the third light emitting cells C3 disposed at the center in a state where the light emitting devices are arranged to surround the light emitting devices. The current density of the third light emitting cell C3 can be increased by forming the area of the third light emitting cell C3 to be smaller than that of the remaining light emitting cells C1, C2, and C4, for example.

If the current density of the third light emitting cells C3 is increased, the heat can be intensively generated in the third light emitting cells C3. 1, the heat-radiating pad 43 is provided with a heat-radiating pad 43 for radiating heat generated in the third light-emitting cell C3. In this embodiment of the present invention, And may be disposed so as to cover the entire light emitting cells C3.

2, the light emitting device 100 includes a substrate 21, a light emitting structure 23, a first contact electrode 31 (see FIG. 2) , A second contact electrode (33), a first insulating layer (35), and a second insulating layer (37).

The substrate 21 is not limited as long as it can grow the light emitting structure 23 and may be, for example, a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. Such a substrate 21 can be separated and removed from the light emitting structure 23 using a known technique. Though not shown in the drawing, the lower surface of the light emitting structure 23 may have a surface with increased roughness.

The light emitting structure 23 includes a first conductivity type semiconductor layer 25, an active layer 27 located on the first conductivity type semiconductor layer 25, and a second conductivity type semiconductor layer 29 ). The first conductive semiconductor layer 25, the active layer 27 and the second conductive semiconductor layer 29 may include a Group III-V compound semiconductor. For example, (Al, Ga, In) N Based semiconductor, for example.

The first conductivity type semiconductor layer 25 may include an n-type impurity (for example, Si), the second conductivity type semiconductor layer 29 may include a p-type impurity (for example, Mg) It could be the opposite. The active layer 27 may include a multiple quantum well structure (MQW), and the composition ratio may be determined so as to emit light having a desired peak wavelength.

The light emitting structure 23 may include a region where the second conductivity type semiconductor layer 29 and the active layer 27 are partially removed and the first conductivity type semiconductor layer 25 is partially exposed. 2, a plurality of holes h may be formed through the second conductive semiconductor layer 29 and the active layer 27 to expose the first conductive semiconductor layer 25 . At this time, the shape and arrangement of the holes h may be variously modified.

The first contact electrode 31 and the second contact electrode 33 may be in ohmic contact with the first conductivity type semiconductor layer 25 and the second conductivity type semiconductor layer 29, respectively. The second contact electrode 33 is formed on the second conductivity type semiconductor layer 29 and a part or the whole of the second conductivity type semiconductor layer 29 is formed Can be covered.

The second contact electrode 33 may be a material that can be in ohmic contact with the second conductive semiconductor layer 29. For example, the second contact electrode 33 may include at least one of a metallic material and a conductive oxide.

In the case where the second contact electrode 33 includes a metallic material, the second contact electrode 33 includes a reflective layer (not shown) in ohmic contact with the second conductive type semiconductor layer 29 and a reflective layer And a cover layer (not shown). To this end, the reflective layer may comprise a metal and may be formed as a single layer or multiple layers. The second contact electrode 33 can be formed in a wider area on the upper surface of the second conductive type semiconductor layer 29 than in the case where the second contact electrode 33 includes a conductive oxide. So that the forward voltage V f of the light emitting device 100 can be reduced.

The first insulating layer 35 may be formed on the upper surface of the light emitting structure 23 and may cover the entire surface excluding a portion for exposing the second contact electrode 33. The first insulating layer 35 is formed to cover the second conductive type semiconductor layer 29 and the active layer 28 exposed by the hole h formed in the light emitting structure 23. The first insulating layer is formed on the bottom surface of the hole h so as to partially expose the first conductivity type semiconductor layer 25 for ohmic contact between the first conductive type semiconductor layer 25 and the first contact electrode 31, (h). The first insulating layer 35 may be formed on the second contact electrode 33 to partially expose the second contact electrode 33.

The first insulating layer 35 may include an insulating material, for example, SiO 2 , SiN x , MgF 2, or the like. The first insulating layer 35 may be formed of multiple layers, and may include distributed Bragg reflectors in which materials having different refractive indices are alternately stacked.

When the second contact electrode 33 includes a conductive oxide, the first insulating layer 35 may include a distributed Bragg reflector to improve the luminous efficiency of the light emitting device 100. The first insulating layer 35 may be formed of a transparent insulating oxide (for example, SiO 2 ) and may be formed by stacking the second contact electrode 33, the first insulating layer 35 and the first contact electrode 31 The omnidirectional reflector can be formed.

3, the first insulating layer 35 may be formed to cover a part of the substrate 21. The first insulating layer 35 may be varied depending on the chip unit isolation in the manufacturing process of the light emitting device 100. A part of the substrate 21 may be covered with the first insulating layer 35 when the first insulating layer 35 is formed after the wafers are individually formed in a chip unit in the manufacturing process of the light emitting device 100.

The first contact electrode 31 is formed on the upper portion of the light emitting structure 23 and may be formed to cover the entire first insulating layer 35 except a part of the first insulating layer 35. At this time, the first contact electrode 31 is formed to fill the hole h formed in the light emitting structure 23, so that the first contact electrode 31 is in ohmic contact with the first conductive type semiconductor layer 25 exposed on the bottom surface of the hole h. As described above, since the first contact electrode 31 is formed to cover most of the first insulating layer 35, the light emitted from the light emitting structure 23 can be reflected by the first contact electrode 31.

The first contact electrode 31 and the second contact electrode 33 may be electrically insulated from each other by the first insulating layer 35.

As described above, the first contact electrode 31 is in ohmic contact with the first conductivity type semiconductor layer 25 and reflects light. Accordingly, the first contact electrode 31 may include a highly reflective metal layer such as an Al layer, and may be formed of a single layer or may be formed of multiple layers. At this time, the highly reflective metal layer may be formed on a contact layer such as Ti, Cr, or Ni, and the first contact electrode 31 may be formed of Ni, Pt, Pd, Rh, W, Ti, Al, Mg, And may include one or more.

The second insulating layer 37 is formed so as to cover the whole except the part of the first contact electrode 31. The second insulating layer 37 may be formed with a first opening op1 partially exposing the first contact electrode 31 as shown in FIG. 2 (c) , A second opening (op2) for partially exposing the second contact electrode 33 may be formed. At this time, the second opening op2 may be formed over the first insulating layer 35, the first contact electrode 31, and the second insulating layer 37. At least one of the first opening (op1) and the second opening (op2) may be formed.

The second insulating layer 37 may include an insulating material and may include, for example, SiO 2 , SiN x , MgF 2 , and the like, and may include multiple layers, Lt; RTI ID = 0.0 > Bragg reflector. ≪ / RTI > When the second insulating layer 37 is composed of multiple layers, the uppermost layer of the second insulating layer 37 may be formed of SiN x . When the uppermost layer of the second insulating layer 37 is formed of SiN x , it is possible to effectively prevent moisture from penetrating into the light emitting structure 23. [

The first electrode 39 and the second electrode 41 are located on the second insulating layer 37 and may be electrically connected to the first contact electrode 31 and the second contact electrode 33, respectively. The first electrode 39 is electrically connected to the first contact electrode 31 through the first opening op1 and the second electrode 41 is electrically connected to the second contact electrode via the second opening op2. 33 to be electrically connected.

In this case, the first electrode 39 is electrically connected to the fourth light emitting cell C4, as shown in FIG. 2 (c), so that the first opening op1 is electrically connected to the fourth And may be formed in the light emitting cell C4.

2B, the first light emitting cell C1 and the second light emitting cell C2 may be formed on the same substrate 21, and the first light emitting cell C1 and the second light emitting cell C2 may be formed on the same substrate 21, A space is formed between the second light emitting cells C2. At this time, the side surface and the bottom surface of the spaced space between the first light emitting cell (C1) and the second light emitting cell (C2) may be covered with the first insulating layer (35) of the first light emitting cell (C1).

The first contact electrode 31 of the first light emitting cell C1 is connected to the second contact electrode 33 of the second light emitting cell C2 in order for the first light emitting cell C1 and the second light emitting cell C2 to be connected in series, ). At this time, the first contact electrode 31 of the first light emitting cell C1 may fill a space between the first light emitting cell C1 and the second light emitting cell C2.

Since the first electrode 39 and the second electrode 41 are formed to have a thickness of several tens of μm or more, the light emitting device 100 itself can be used as a chip scale package.

In addition, the first electrode 39 and the second electrode 41 may be formed of a single layer or a multilayer, and may include a material having electrical conductivity. For example, the first electrode 39 and the second electrode 41 may each include at least one of Cu, Pt, Au, Ti, Cr, Ni, Al, and Ag, And a non-metallic material interposed between the metal particles. Here, the first electrode 39 and the second electrode 41 may be formed by plating, vapor deposition, dipping, screen printing, or the like.

When the first electrode 39 and the second electrode 41 are formed by plating, a seed metal is formed on the entire surfaces of the first and second openings op1 and op2 by a method such as sputtering. The seed metal may include Ti, Cu, Au, Cr, and the like, and may function as an under bump metallization layer. For example, the seed metal may have a Ti / Cu laminated structure. After the seed metal is formed, a mask is formed on the seed metal. The mask masks the portion corresponding to the region where the insulating support is formed, and opens the region where the first and second electrodes 39 and 41 are formed . Next, the first and second electrodes 39 and 41 are formed in the open region of the mask through the plating process, and then the mask and the seed metal are removed through the etching process, so that the first and second electrodes 39 and 41 .

The first and second electrodes 39 and 41 are formed using a screen printing method as follows. A UBM layer is formed on at least a part of the first opening op1 and the second opening op2 through a deposition and patterning method such as sputtering or a deposition and liftoff method. The UBM layer may be formed on a region where the first and second electrodes 39 and 41 are to be formed and may include a (Ti or TiW) layer and a (Cu, Ni, Au single layer or a combination) layer. For example, the UBM layer may have a Ti / Cu laminate structure. Next, a mask is formed, the mask masking a portion corresponding to the region where the insulating support is formed, and the region where the first and second electrodes 39 and 41 are formed is opened. Subsequently, a material such as an Ag paste, an Au paste, and a Cu paste is formed in the open area through a screen printing process, and is cured. Then, the first and second electrodes 39 and 41 may be formed by removing the mask through an etching process.

The heat radiating pad 43 may be formed on the plane of the second insulating layer 37 and may be formed in contact with the second insulating layer 37. The thickness of the heat radiating pad 43 may be the same as that of the first and second electrodes 39 and 41 or may be formed to have a thickness smaller than that of the first and second electrodes 39 and 41. The area of the heat radiating pad 43 may be formed to have a larger area than the area of the planar surfaces of the first and second electrodes 39 and 41. As shown in FIG. 1, at least three surfaces are exposed to the outside . For example, the area of the heat-radiating pad may be 50% or more of the planar shape of the light-emitting element, and the larger the area of the heat-radiating pad, the higher the heat radiation efficiency.

Since the first electrode 39 and the second electrode 41 are formed on the edge side of the light emitting structure 23 to have a certain area or less in the first embodiment of the present invention, the first and second electrodes 39 and 41 May not be formed. At this time, the first and second electrodes 39 and 41 and the heat radiating pad 43 may be spaced apart from each other by a predetermined distance so as to be electrically insulated from each other. That is, the heat radiating pad 43 may be formed of the same material as the first and second electrodes 39 and 41, and the heat radiating pad 43 may be spaced apart from the first and second electrodes 39 and 41 The heat dissipation pad 43 can be formed so that no current flows. Here, the shapes of the first and second electrodes 39 and 41 and the shape of the heat radiation pad 43 are not limited to those shown in the drawings, and can be variously modified as needed.

3 (a) is a cross-sectional view illustrating an example of a combination of a light emitting device and a printed circuit board according to an embodiment of the present invention.

A light emitting diode according to an exemplary embodiment of the present invention includes a light emitting device 100 and a printed circuit board 200. The light emitting device 100 is as described above and the printed circuit board 200 includes a substrate body 201, an insulating portion 203, and a lead portion 205.

The substrate body 201 is made of metal and is in direct contact with the heat radiation pad 43 so that the heat generated in the light emitting device 100 is transferred to the substrate body 201 through the heat radiation pad 43 . As shown in the drawing, the lead portions 205 are formed in two or more, and when the light emitting device 100 is mounted on the printed circuit board 200, the lead portions 205 are in contact with the first and second electrodes 39 and 41, do. The insulating portion 203 is interposed between the substrate main body 201 and the lead portion 205 to insulate the lead portion 205 from the substrate main body 201.

At this time, the substrate main body 201 is protruded in a position where the lead part 205 is not formed so as to be in contact with the heat radiating pad 43, and the height of the protruding part is the same as the height of the lead part 205. The protruded portion of the substrate main body 201 and the lead portion 205 may be spaced apart from each other by a predetermined distance so that the substrate main body 201 and the lead portion 205 are electrically insulated.

3 (b) is a cross-sectional view showing another example of the combination of the light emitting device and the printed circuit board according to the embodiment of the present invention.

The light emitting diode according to another example of the present invention includes the light emitting device 100 and the printed circuit board 200 and explains another example of the present invention while omitting the description of the same configuration as in the example of the present invention .

In another example of the present invention, the substrate body 201 is protruded at a position where the lead portion 205 is not formed, and the height of the projected formed portion is protruded by the height of the insulating portion 203. The protruded portion of the substrate main body 201 and the lead portion 205 may be spaced apart from each other by a predetermined distance so that the substrate main body 201 and the lead portion 205 are electrically insulated.

A heat dissipation unit 207 is formed on the protruded portion of the substrate main body 201. As shown in the drawing, the heat radiating portion 207 is spaced apart from the lead portion 205 by a predetermined distance, and has the same height as the lead portion 205. Accordingly, when the light emitting device 100 is mounted on the printed circuit board 200, the heat dissipating unit 207 is brought into contact with the heat dissipating pad 43. The heat dissipation portion 207 may be formed of the same metal as the lead portion 205, but is not limited thereto.

3 (c) is a cross-sectional view illustrating another example of the combination of the light emitting device and the printed circuit board according to the embodiment of the present invention.

A light emitting diode according to another embodiment of the present invention includes a light emitting device and a printed circuit board, and further description of the present invention will be omitted, and a description of the same configuration as in the example of the present invention will be omitted.

In another embodiment of the present invention, the substrate body 201 may be formed of an insulating material such as silicon or ceramic, and the lead portion 205 may be formed on one surface of the substrate body 201, And the heat radiating portion 207 may be formed on one surface and the other surface, respectively. When the light emitting device 100 is mounted on the printed circuit board 200, the first and second electrodes 39 and 41 are in direct contact with the lead portion 205 and the heat radiating pad 43 is in contact with the heat dissipating portion 207, respectively. At this time, the lead portion 205 and the heat dissipating portion 207 may be spaced apart from each other.

4 is a view illustrating a light emitting diode to which a light emitting device and a dome-shaped lens according to an embodiment of the present invention are applied.

The light emitting device 100 may be mounted on the printed circuit board 200 and the dome lens 310 may be mounted on the light emitting device 100. In this case, ) Can be combined. The dome-shaped lens 310 has a light incidence surface 312 on which the light emitted from the light emitting device 100 is incident, and a light exiting surface 314 on the upper surface. The light incidence surface 312 may be formed in a flat plane, and may be variously modified as needed. And the light-exiting surface 314 may be formed as a surface having a curvature of a circular or modified circular cross-section.

The light emitting device 100 is mounted on the printed circuit board 200 and can supply power externally applied through the first electrode 39 and the second electrode 41 of the light emitting device 100. Further, a heat radiating portion for radiating heat transmitted from the light emitting device 100 may be formed on the lower portion of the printed circuit board 200.

As a result of measuring the light efficiency of a conventional light emitting diode having the same configuration as that of the light emitting diode to which the light emitting device 100 according to an embodiment of the present invention is applied, when the light efficiency of the conventional light emitting diode is 100% It can be confirmed that the light emitting diode according to an embodiment of the present invention has a light efficiency of 100.7%.

As described above, in the comparison between the conventional light emitting diode and the light emitting diode according to the embodiment of the present invention, the same single phosphor having the chromaticity coordinate CIEx of 0.330 is applied.

Also, in the case where the concave lens 320 as shown in FIG. 5 is applied instead of the dome-shaped lens, the light emitted from the light emitting diode according to the embodiment of the present invention can increase the luminance at the center, The light efficiency of the light source can be increased.

The concave lens 320 may be a TIR lens. That is, the concave lens 320 has a light incidence surface 322 on which light emitted from the light emitting device 100 is incident, a reflector 324 on an upper surface, and a light exiting surface 326 on a side surface. Accordingly, the light emitted from the light emitting device 100 is incident on the concave lens 320, and the light is reflected to the side of the concave lens 320 and is output. At this time, in the embodiment of the present invention, although the light incidence surface 322 is shown as being formed in a planar shape, it may be formed in a convex shape if necessary.

6 is a view illustrating a light emitting diode to which a light emitting device, a printed circuit board, and a lens according to an embodiment of the present invention are applied.

6A to 6C illustrate a state in which the light emitting device 100 according to the embodiment of the present invention is mounted on the printed circuit board 200 shown in FIG. (Not shown). The light emitting device 100 may be formed so as to cover the entire printed circuit board 200 on which the light emitting device 100 is mounted as shown in FIGS. 6 (a) to 6 (c) The two electrodes 39 and 41 may be in direct contact with the lead portion 205 to be electrically connected. The heat radiating pad 43 may be in direct contact with the heat radiating portion 207 of the printed circuit board 200 or may be in direct contact with the printed circuit board 200 when the printed circuit board 200 is formed of metal.

In this case, the dome-shaped lens 310 or the concave lens 320 described in the embodiment of the present invention may include a phosphor for wavelength-converting the light emitted from the light emitting device 100. The phosphor can emit light emitted from the light emitting device 100 in various colors, and in particular, can realize mixed light such as white light.

7 is an exploded perspective view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a lighting device.

Referring to FIG. 7, the illumination device according to the present embodiment includes a diffusion cover 1010, a light emitting device module 1020, and a body part 1030. The body 1030 may receive the light emitting module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the light emitting module 1020.

The body part 1030 is not limited as long as it can receive and support the light emitting element module 1020 and supply the electric power to the light emitting element module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [

The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the light emitting device module 1020, and may include at least one IC chip. The IC chip may control, convert, or control the characteristics of the power supplied to the light emitting device module 1020. The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 . The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 115 may be electrically connected to the power supply unit 1033 in the power supply case 1035 and may serve as a path through which external power may be supplied to the power supply unit 1033. [

The light emitting element module 1020 includes a substrate 1023 and a light emitting element 1021 disposed on the substrate 1023. The light emitting device module 1020 is provided on the body case 1031 and can be electrically connected to the power supply device 1033.

The substrate 1023 is not limited as long as it is a substrate capable of supporting the light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [ The light emitting device 1021 may include at least one of the light emitting devices according to the embodiments of the present invention described above.

The diffusion cover 1010 is disposed on the light emitting element 1021 and may be fixed to the body case 1031 to cover the light emitting element 1021. [ The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.

8 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a display device.

The display device of this embodiment includes a display panel 2110, a backlight unit BLU1 for providing light to the display panel 2110 and a panel guide 2100 for supporting the lower edge of the display panel 2110. [

The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCBs 2112 and 2113 are not formed on a separate PCB, but may be formed on a thin film transistor substrate.

The backlight unit (BLU1) includes a light source module including at least one substrate (2150) and a plurality of light emitting elements (2160). Further, the backlight unit BLU1 may further include a bottom cover 2180, a reflection sheet 2170, a diffusion plate 2131, and optical sheets 2130. [

The bottom cover 2180 is open at the top and can accommodate the substrate 2150, the light emitting element 2160, the reflection sheet 2170, the diffusion plate 2131 and the optical sheets 2130. In addition, the bottom cover 2180 can be engaged with the panel guide 2100. The substrate 2150 may be disposed under the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface. In addition, a plurality of substrates 2150 may be arranged so that a plurality of substrates 2150 are arranged side by side, but it is not limited thereto and may be formed as a single substrate 2150.

The light emitting device 2160 may include at least one of the light emitting devices according to the embodiments of the present invention described above. The light emitting elements 2160 may be regularly arranged on the substrate 2150 in a predetermined pattern. In addition, a lens 2210 is disposed on each light emitting element 2160, so that the uniformity of light emitted from the plurality of light emitting elements 2160 can be improved.

The diffusion plate 2131 and the optical sheets 2130 are placed on the light emitting element 2160. The light emitted from the light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.

9 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment is applied to a display device.

The display device having the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit BLU2 disposed on the back surface of the display panel 3210 to emit light. The display device further includes a frame 240 supporting the display panel 3210 and storing the backlight unit BLU2 and covers 3240 and 3280 surrounding the display panel 3210. [

The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed. Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate. The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit BLU2.

The backlight unit BLU2 for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the upper surface thereof, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 for converting the light into the plane light. The backlight unit BLU2 of the present embodiment is disposed on the light guide plate 3250 and includes optical sheets 3230 for diffusing and condensing light, a light guide plate 3250 disposed below the light guide plate 3250, And a reflective sheet 3260 that reflects the light toward the display panel 3210. [

The light source module includes a substrate 3220 and a plurality of light emitting devices 3110 disposed on a surface of the substrate 3220 at predetermined intervals. The substrate 3220 is not limited as long as it supports the light emitting element 3110 and is electrically connected to the light emitting element 3110, for example, it may be a printed circuit board. The light emitting device 3110 may include at least one light emitting device according to the embodiments of the present invention described above. The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. Through the light guide plate 3250 and the optical sheets 3230, the point light source emitted from the light emitting elements 3110 can be transformed into a surface light source.

As described above, the light emitting device according to the embodiments of the present invention can be applied to the edge display device as in the present embodiment.

10 is a cross-sectional view illustrating an example in which a light emitting device according to an embodiment of the present invention is applied to a headlamp.

Referring to FIG. 10, the head lamp includes a lamp body 4070, a substrate 4020, a light emitting element 4010, and a cover lens 4050. Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.

Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070. The substrate 4020 is not limited as long as it can support the light emitting element 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [ Also, the light emitting device 4010 may be electrically connected to an external power source through the conductive pattern of the substrate 4020. In addition, the light emitting device 4010 may include at least one light emitting device according to the embodiments of the present invention described above.

The cover lens 4050 is located on the path through which light emitted from the light emitting element 4010 travels. For example, as shown, the cover lens 4050 may be disposed apart from the light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is to be emitted from the light emitting device 4010 . The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted. The connecting member 4040 may serve as a light guide for fixing the cover lens 4050 to the substrate 4020 and for arranging the light emitting element 4010 to provide the light emitting path 4045. [ At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate heat generated when the light emitting device 4010 is driven.

As described above, the light emitting device according to the embodiments of the present invention can be applied to a head lamp, particularly, a headlamp for a vehicle as in the present embodiment.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It should be understood that the scope of the present invention is to be understood as the scope of the following claims and their equivalents.

100: light emitting element 21: substrate
23: light emitting structure 25: first conductivity type semiconductor layer
27: active layer 29: second conductivity type semiconductor layer
31: first contact electrode 33: second contact electrode
35: first insulating layer 37: second insulating layer
39: first electrode 41: second electrode
43: heat radiating pad h: hole
op1: first opening portion op2: second opening portion
C1 to C4: first to fourth light emitting cells
200: printed circuit board 201: substrate body
203: insulation part 205: lead part
207:

Claims (16)

A first light emitting cell;
At least one second light emitting cell disposed on the same plane as the first light emitting cell and electrically connected to the first light emitting cell;
A first electrode formed on the first light emitting cell or the one or more second light emitting cells and electrically connected to one of the first light emitting cell and the one or more second light emitting cells;
A second electrode formed on the first light emitting cell or the one or more second light emitting cells and electrically connected to the other of the first light emitting cell and the one or more second light emitting cells; And
And a heat dissipation pad formed on the first light emitting cell and the one or more second light emitting cells and radiating heat generated from the first light emitting cell and the one or more second light emitting cells,
Wherein the first light emitting cell is disposed at the center, and the at least one second light emitting cell is disposed so as to surround the first light emitting cell. The method according to claim 1,
Wherein at least three planar surfaces of the heat radiation pad are exposed on the outer surface. 2. The organic light emitting display according to claim 1, wherein each of the first light emitting cell and the one or more second light emitting cells comprises:
A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;
A first contact electrode and a second contact electrode located on the light emitting structure and ohmically contacting the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And
And an insulating layer covering a part of the first contact electrode and the second contact electrode for insulation between the first contact electrode and the second contact electrode,
Wherein the first electrode and the second electrode are electrically connected to the first contact electrode and the second contact electrode, respectively. The method of claim 3,
A first opening portion formed between the first and second contact electrodes to cover a part of the second contact electrode and partially exposing the first conductivity type semiconductor layer and the second contact electrode, A first insulating layer formed on the first insulating layer; And
A second insulating layer formed to cover a part of the first contact electrode partially covering the first insulating layer and having a third opening portion and a fourth opening portion for partially exposing the first contact electrode and the second contact electrode, . The method of claim 4,
Wherein at least one of the first electrode, the second electrode, and the heat radiation pad is formed on the second insulating layer. The method of claim 4,
The first electrode is electrically connected to the first contact electrode through the third opening,
And the second electrode is electrically connected to the second contact electrode through the fourth opening. The method according to claim 1,
Wherein the first electrode, the second electrode, and the heat dissipation pad each include at least one of Cu, Pt, Au, Ti, Ni, Al, and Ag. The method according to claim 1,
Wherein the first electrode, the second electrode, and the heat radiating pad are spaced apart from each other. The method according to claim 1,
Wherein the first light emitting cell is a polygon having a circle or four or more angles. A first light emitting cell, at least one second light emitting cell disposed on the same plane as the first light emitting cell, first and second light emitting cells electrically connected to one and the other of the first light emitting cell and the one or more second light emitting cells, A second electrode, and a heat radiating pad formed on the first light emitting cell and the at least one second light emitting cell to radiate heat generated in the at least one light emitting cell; And
And a printed circuit board on which the light emitting device is mounted,
Wherein the printed circuit board includes:
A substrate body for dispersing heat transferred through the heat dissipation pad; And
And a lead portion formed on the substrate body and electrically connected to the first and second electrodes. The method of claim 10,
And the substrate body is in contact with the heat radiating pad. [Claim 11] The printed circuit board according to claim 10,
And a heat dissipation unit formed on the substrate body and in contact with the heat dissipation pad. The method of claim 12,
And the lead portion and the heat radiating portion are insulated from each other. [Claim 11] The printed circuit board according to claim 10,
And an insulating portion interposed between the substrate body and the lid portion. The method of claim 10,
And a lens positioned above the light emitting device and emitting light emitted from the light emitting device. 16. The method of claim 15,
Wherein the lens comprises a phosphor for wavelength-converting light emitted from the light emitting element.
KR1020150037560A 2015-02-13 2015-03-18 Light emitting device and light emitting diode KR20160112244A (en)

Priority Applications (14)

Application Number Priority Date Filing Date Title
KR1020150037560A KR20160112244A (en) 2015-03-18 2015-03-18 Light emitting device and light emitting diode
PCT/KR2016/001255 WO2016129873A2 (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201910175807.1A CN110061027B (en) 2015-02-13 2016-02-04 Light-emitting element
CN201910953376.7A CN110690242B (en) 2015-02-13 2016-02-04 Light-emitting element
CN201911070837.2A CN110854250B (en) 2015-02-13 2016-02-04 Light-emitting element
EP16749413.7A EP3258507A2 (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201911037711.5A CN110676286B (en) 2015-02-13 2016-02-04 Light-emitting element and light-emitting diode
CN201680010257.2A CN107223285B (en) 2015-02-13 2016-02-04 Light emitting element and light emitting diode
DE112016000731.0T DE112016000731T5 (en) 2015-02-13 2016-02-04 LIGHT OUTDOOR ELEMENT AND LUMINAIRE DIODE
CN201911073767.6A CN110690249B (en) 2015-02-13 2016-02-04 Light-emitting element
CN201911074035.9A CN110690250A (en) 2015-02-13 2016-02-04 Light emitting element and light emitting diode
US15/409,306 US10438992B2 (en) 2015-02-13 2017-01-18 Light-emitting element and light-emitting diode
US16/594,239 US11282892B2 (en) 2015-02-13 2019-10-07 Light-emitting element including intermediate connection and branches
US17/697,410 US20220208851A1 (en) 2015-02-13 2022-03-17 Light-emitting element and light-emitting diode

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021210919A1 (en) * 2020-04-16 2021-10-21 서울바이오시스주식회사 Single-chip multi-band light-emitting diode
EP4135056A4 (en) * 2020-04-16 2024-05-08 Seoul Viosys Co., Ltd. Single-chip multi-band light-emitting diode
EP4141971A4 (en) * 2020-06-19 2024-05-29 Seoul Viosys Co., Ltd Single-chip multi band light-emitting diode and applications thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021210919A1 (en) * 2020-04-16 2021-10-21 서울바이오시스주식회사 Single-chip multi-band light-emitting diode
EP4135056A4 (en) * 2020-04-16 2024-05-08 Seoul Viosys Co., Ltd. Single-chip multi-band light-emitting diode
US12095001B2 (en) 2020-04-16 2024-09-17 Seoul Viosys Co., Ltd. Single chip multi band LED
EP4141971A4 (en) * 2020-06-19 2024-05-29 Seoul Viosys Co., Ltd Single-chip multi band light-emitting diode and applications thereof

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