KR20160110692A - Semiconductor light emitting diode - Google Patents

Semiconductor light emitting diode Download PDF

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Publication number
KR20160110692A
KR20160110692A KR1020150033444A KR20150033444A KR20160110692A KR 20160110692 A KR20160110692 A KR 20160110692A KR 1020150033444 A KR1020150033444 A KR 1020150033444A KR 20150033444 A KR20150033444 A KR 20150033444A KR 20160110692 A KR20160110692 A KR 20160110692A
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KR
South Korea
Prior art keywords
line
light emitting
layer
emitting device
electrode
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KR1020150033444A
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Korean (ko)
Inventor
이소라
이미희
장미나
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서울바이오시스 주식회사
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Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020150033444A priority Critical patent/KR20160110692A/en
Priority to DE112015005634.3T priority patent/DE112015005634T5/en
Priority to PCT/KR2015/013270 priority patent/WO2016099061A1/en
Priority to US15/527,807 priority patent/US10193020B2/en
Priority to CN201510954206.2A priority patent/CN105720161B/en
Priority to CN201810927330.3A priority patent/CN108807632B/en
Publication of KR20160110692A publication Critical patent/KR20160110692A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device including a hole electrode structure for improving current dispersion.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device including a hole electrode structure for improving current dispersion.

In general, a semiconductor light emitting device includes a light emitting structure in which an active layer is disposed between a first conductivity type semiconductor layer (generally, an n-type semiconductor layer) and a second conductivity type semiconductor layer (Generally, an n-electrode) for injecting electrons into the conductive type semiconductor layer and a second electrode (generally, a p-electrode) for injecting holes into the second conductive type semiconductor layer.

Electrons supplied through the first conductive type semiconductor layer and holes injected from the second conductive type semiconductor layer are recombined in the active layer to generate light.

A semiconductor light emitting device in which a first electrode electrically connected to the first conductivity type semiconductor layer is formed in the form of a conductive substrate has emerged.

However, in the case of the semiconductor light emitting device having the above-described structure, there is a problem that current is concentrated around the first electrode.

In addition, in order to realize high output, various studies have been conducted on formation and arrangement of electrodes.

In recent years, a structure has been developed in which a first electrode and a first conductive semiconductor are electrically connected to each other by using a hole electrode formed to penetrate the light emitting structure in the vertical direction.

However, when the first electrode and the second electrode are formed on the same surface, a part of the light emitting region must be removed to form an electrode, so that the light emitting area is reduced and the luminous efficiency is lowered.

Therefore, a structure that minimizes the loss of the light emitting area by reducing the size of the hole electrode has been proposed. However, it is difficult to form the hole electrode of several to several tens of micrometers in a precise circular shape at the current etching process level.

That is, when a hole electrode having a few to several tens of micrometers is formed in a circular shape, a hole electrode having an irregular outline line may be formed instead of forming a circular electrode precisely.

At this time, there is a high possibility that the current injected around the irregular part of the hole electrode is concentrated, and the luminous efficiency of the light emitting device ultimately deteriorates due to current density.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a structure of a hole electrode and a semiconductor light emitting device including the same to solve the current crowding phenomenon in a hole electrode having an irregular cross section and to secure a maximum light emitting area.

According to an aspect of the present invention, there is provided a light emitting structure including a conductive substrate, a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer stacked on the conductive substrate, A second electrode layer and a cover metal layer are formed under the second conductive type semiconductor layer, and the first electrode layer is formed between the insulating layer and the second conductive type semiconductor layer, Type semiconductor layer, and a plurality of hole electrodes extending through the active layer to the inside of the first conductive type semiconductor layer, wherein the upper surface of the hole electrode on the transverse section is a first line, a second line, And a fourth line, wherein the first line is parallel to the second line, the third line is parallel to the fourth line, and the connection line connecting the first line and the third line is a non- Type may be provided with a semiconductor light-emitting device.

The connection line connecting the first line and the third line may be formed along a part of the virtual circle.

The connection line connecting the second line and the fourth line may be non-linear.

The connection line connecting the second line and the fourth line may be formed along a part of the virtual circle.

The sum of the diameter of a virtual circle forming a connection line connecting the first line and the third line and the diameter of a virtual circle forming a connection line connecting the second line and the fourth line, The distance between the first line and the third line, and the distance between the second line and the fourth line.

Wherein a distance between the first line and the second line on the cross section is a diameter of a virtual circle forming a connection line connecting the first line and the third line and a connection line connecting the second line and the third line May be less than the sum of the diameters of the imaginary circles forming the line.

Wherein the distance between the third line and the fourth line on the cross section is a diameter of a virtual circle forming a connection line connecting the first line and the third line and a connection line connecting the second line and the third line May be less than the sum of the diameters of the imaginary circles forming the line.

The hole electrode is formed in the opening of the insulating layer and at least one corner of the opening of the insulating layer is formed along a part of a virtual circle having a diameter larger than a virtual circle forming the corner of the hole electrode .

Different irregular patterns may be formed on the first conductive semiconductor layer at the same time.

The semiconductor light emitting device according to the present invention can form a regular outline even when a relatively small size hole electrode is formed, thereby eliminating current crowding in the hole electrode and improving the luminous efficiency .

In addition, since the process difficulty for forming the hole electrode is reduced, it is possible to form a hole electrode having a smaller size, thereby maximizing the light emitting area of the semiconductor light emitting device.

1 is a perspective view schematically showing a semiconductor light emitting device according to an embodiment of the present invention.
FIG. 2A schematically shows a cross-sectional view of the semiconductor light emitting device shown in FIG. 1 and the hole electrode disposed in the semiconductor light emitting device.
FIG. 2B is a vertical sectional view taken along line AA in FIG. 2A.
FIG. 2C is a vertical sectional view taken along line BB in FIG. 2A. FIG.
3A to 3C schematically show a process of forming a concave-convex pattern on the top surface of the light emitting structure (particularly, the first conductivity type semiconductor layer).
4A is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention.
4B is a longitudinal sectional view taken along line CC of FIG. 4A.
4C is a vertical sectional view taken along line DD of FIG. 4A.
5A is a cross-sectional view schematically showing a semiconductor light emitting device according to another embodiment of the present invention.
5B is a vertical sectional view taken along line CC in FIG. 5A.
5C is a vertical sectional view taken along line DD of FIG. 5A.
6 is an exploded perspective view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a lighting device.
7 is a cross-sectional view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a display device.
8 is a cross-sectional view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a display device.
9 is a cross-sectional view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a headlamp.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, a semiconductor light emitting device according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

The first conductive type semiconductor layer is an n-type semiconductor layer and the second conductive type semiconductor layer is a p-type semiconductor layer. However, the present invention is not limited to this, Semiconductor layer, and the second conductivity type semiconductor layer may be composed of an n-type semiconductor layer.

The active layer is a layer through which electrons and holes are recombined and emits light. The active layer preferably has a first energy-transferring semiconductor layer having an energy bandgap different from that of the first conductivity-type semiconductor layer and the second conductivity- And is formed as a layer having an energy band gap smaller than that of the second conductivity type semiconductor layer.

FIG. 1 is a perspective view schematically showing a semiconductor light emitting device 100 according to an embodiment of the present invention. FIG. 2a is a cross-sectional view of a semiconductor light emitting device 100 shown in FIG. 1 and a hole A schematic cross-sectional view of the electrode 110 is shown. 2B and 2C are longitudinal sectional views taken along line A-A and line B-B in FIG. 2A, respectively.

The semiconductor light emitting device includes a conductive substrate 170, a second conductivity type semiconductor layer 104, an active layer 103 (not shown) And a first conductivity type semiconductor layer 102 are stacked.

A first electrode layer 150 and an insulating layer 140 are formed between the conductive substrate 170 and the second conductivity type semiconductor layer 104. [

The second electrode layer 120 and the cover metal layer 130 are formed under the second conductive semiconductor layer 104.

The first electrode layer 150 includes a plurality of hole electrodes 110 extending through the insulating layer 140, the second conductivity type semiconductor layer 104, and the active layer 103 to the inside of the first conductivity type semiconductor layer 101 ).

The first electrode layer 150 and the first conductive type semiconductor layer 101 are electrically connected through the hole electrode 100.

Then, a protective layer 190 is additionally formed on the semiconductor light emitting device 100. The protective layer 190 is formed to surround the exposed cover metal layer 130, the insulating layer 140 and the light emitting structure 101, and exposes the electrode pad 180 to the outside.

Hereinafter, the structure of the semiconductor light emitting device 100 will be described in more detail.

The second conductivity type semiconductor layer 104, the active layer 103 and the first conductivity type semiconductor layer 102 in the light emitting structure 101 may be sequentially stacked. A mesa region May be formed obliquely through a technique such as photoresist reflow to improve light extraction efficiency.

The light emitting structure 101 is provided on the conductive substrate 170 and electrically connected to the conductive substrate 170 and the second conductive semiconductor layer 102 to electrically connect the conductive substrate 170 and the first conductive semiconductor layer 102 104 are sandwiched between the first electrode layer 150 and the first electrode layer 150.

The first electrode layer 150 and the conductive substrate 170 may be bonded to each other by a bonding metal layer 160 formed of a metal such as Sn / Au or Sn / Ag.

The conductive substrate 170 may be formed of a conductive material such as Au, Ni, Al, Cu, W, Si, Se, CuW, CuMo or GaAs.

The first electrode layer 150 may be formed of a conductive material capable of forming an ohmic contact with the first conductive semiconductor layer 102. The first electrode layer 150 may be formed as a single layer as shown in the drawings, .

The first electrode layer 150 may be formed of a conductive material such as Au, Ag, Cu, Zn, Al, In, Ti, Si, Ge, Sn, Mg, Ta, Cr, W, Ru, Rh, Ir, Pt, or an alloy formed of at least one of these metals may be used.

The first electrode layer 150 is formed on the conductive substrate 170, and a part of the first electrode layer 150 is formed to extend upward by a predetermined height.

At this time, the first electrode layer 150 extends to a region where at least the second conductivity type semiconductor layer 104, preferably the first conductivity type semiconductor layer 102 is formed, so that the first electrode layer 150 is formed of the first conductivity type And is configured to be electrically connected to the semiconductor layer 102.

In this case, the first electrode layer 150 does not extend to the region where the first conductivity type semiconductor layer 102 is formed, but extends through the second conductivity type semiconductor layer 104 and the active layer 103, Type semiconductor layer 102 through a plurality of hole electrodes 110 formed to extend to the inside of the first conductive semiconductor layer 102. [

The hole electrode 110 may be formed on the first electrode layer 150 having the highest extension.

The hole electrode 110 is formed to fill the opening 140a of the insulating layer 140, which will be described later.

The hole electrode 110 may be formed of Au, Ag, Cu, Zn, Al, In, Ti, Si, Ge, Sn, Mg, Ta, Cr, W, Ru, Rh, Pd and Pt, or an alloy formed of at least two of these metals.

Also, the hole electrode 110 may be formed integrally with the first electrode layer 150 in a single process.

The first electrode layer 150 is formed on the first electrode layer 150 by using the conductive substrate 170 and another semiconductor layer except for the first conductivity type semiconductor layer 102 (for example, the active layer 103, An insulating layer 140 is formed to prevent the semiconductor layer 104 from being electrically connected.

The insulating layer 140 may be formed on both the upper surface of the first electrode layer 150 and the side surface (or inclined side surface) of the first electrode layer 150 formed by extending the predetermined height.

As described above, the plurality of hole electrodes 110 are formed to penetrate the insulating layer 140, and the exposed hole electrodes 110 and the first conductive type semiconductor layer 102 are electrically connected.

The second electrode layer 120 is formed under the second conductive semiconductor layer 104.

The second electrode layer 120 may be formed of a material such as Ag, Al, Pt, or Ni, which is excellent in electrical conductivity and reflection characteristics. Or a laminated structure such as Ni / Ag, NiZn / Ag or TiO / Ag.

In this case, the second electrode layer 120 may be formed such that the area of the upper surface facing the second conductive type semiconductor layer 104 is equal to or narrower than the area of the lower surface of the second conductive type semiconductor layer 104, The upper surface and the side surface of the second electrode layer 120 are not exposed to the outside.

However, when forming the second electrode layer 120, a part of the metal forming the second electrode layer 120 contacts with the first conductive type semiconductor layer 102 or the active layer 103 to prevent a short circuit from occurring, The second electrode layer 120 is formed on the lower surface of the second conductivity type semiconductor layer 104 such that the area of the upper surface facing the second conductivity type semiconductor layer 104 is larger than that of the lower surface of the second conductivity type semiconductor layer 104. [ It is preferable to form it slightly smaller than the area.

A cover metal layer 130 is formed on the lower surface of the second electrode layer 120 and a cover metal layer 130 is formed to cover both the side surface and the lower surface of the second electrode layer 120.

At this time, a part of the cover metal layer 130 comes into contact with the second conductive type semiconductor layer 104.

The cover metal layer 130 may be formed of one of Cr, Ni, Ru, Os, Ir, V, Nb, Ta, Co, Fe, W, and Ti, Or may be formed of a conductive material such as an alloy formed of two or more metals. The cover metal layer 130 may be formed as a single layer as shown in the drawings, but may also be formed in a multi-layer structure.

The cover metal layer 130 includes an opening portion 130a and a portion of the first electrode layer 150 may extend upward by a predetermined height through the opening portion 130a.

At this time, the cover metal layer 130 and the first electrode layer 150 are electrically insulated from each other by the insulating layer 140 extending upward along the first electrode layer 150.

Some areas of the top surface of the cover metal layer 130 are exposed in at least one corner of the light emitting structure 101 or adjacent to both edges present in the same side of the light emitting structure 101, The electrode pad 180 is formed on a part of the region where the electrode pad 180 is formed.

For example, as shown in Figs. 1 and 2A, the cover metal layer 130 is exposed at both corners present in the same side of the light emitting structure 101, and two electrode pads 180 are formed thereon .

As described above, since the electrode pad 180 is not formed on the upper surface of the first conductivity type semiconductor layer 102 corresponding to the light emitting surface, the loss of the light emitting area can be minimized.

The electrode pad 180 is electrically connected to the second electrode layer 120 to provide power to the semiconductor light emitting device from the external power source. As shown in FIG.

Accordingly, the electrode pad 180 formed on a part of the exposed portion of the cover metal layer 130 is electrically connected to the second electrode layer 120 by the cover metal layer 130.

As a result, the cover metal layer 130 on which the electrode pad 180 is formed is formed so as to simultaneously contact the second electrode layer 120 and the electrode pad 180.

In addition, the cover metal layer 130 may serve as an etching stopper in a semiconductor etching process for forming the electrode pad 180. In addition, the cover metal layer 130 can prevent the metal material of the second electrode layer 120 from being diffused or contaminated.

Next, referring to FIG. 2A, an enlarged cross-sectional view of the hole electrode 110 can be confirmed.

As described above, since the light emitting area decreases as the size of the hole electrode existing in the light emitting region increases, it is preferable to form the hole electrode in the size of several to several tens of micrometers.

However, when a hole electrode having a few to several tens of micrometers is formed in a circular shape, if a hole electrode having an irregular outline line is formed, there is a high possibility that a current injected around the irregular part of the hole electrode is concentrated .

2A, the top surface of the hole electrode 110 on the cross section includes the first line, the second line, the third line and the fourth line which are straight lines.

For example, when the top surface of the hole electrode 110 is assumed to be a square, the first line, the second line, the third line, and the fourth line may be square-shaped.

Here, the first line is parallel to the second line, the third line is parallel to the fourth line, the first line and the third line are connected to each other by a connecting line, and the second line and the fourth line are connected to the connecting line Respectively.

At this time, the connection line (or edge) connecting the first line and the third line may be nonlinear, and the connection line connecting the second line and the fourth line may be nonlinear.

It is preferable that the connection lines are formed so as not to have an angular shape because the current may be concentrated around the irregular portions on the upper surface of the hole electrode 110.

Preferably, each connection line may be formed along a portion of a virtual circle or an arc of a virtual circle. At this time, the central angle of the arc can be 90 degrees or less.

That is, the imaginary circle on the cross section is inscribed in the connection line of the hole electrode 110, so that the connection line can be formed to have a predetermined radius of curvature r1.

It is preferable that the diameters of virtual circles forming the connection lines of the hole electrodes 110 are all the same.

As a result, it is possible to form the hole electrode 110 by a simple and easy method, rather than forming the hole electrode 110 of several to several tens of micrometers in a precise circular shape, Since the arc is formed along a circular arc of a circle having a predetermined center angle or a part of the circle of the circle electrode 110, current density can be prevented from being concentrated in the hole electrode 110,

According to one embodiment, a diameter of a virtual circle forming a connection line connecting the first line and the third line of the hole electrode 110 on the cross-sectional surface and a connection line connecting the second line and the fourth line are formed The sum of the diameters of the imaginary circles (i.e., the sum of the diameters of the imaginary circles forming the two opposing diagonally opposite edges) is a connecting line connecting the first and third lines and a connecting line connecting the second and fourth lines May be designed to be smaller than the distance between connecting connecting lines (i.e., the distance d1 between two edges).

According to another embodiment, the distance W1 between the first line and the second line of the hole electrode 110 on the cross section (that is, the distance between the two straight lines facing each other in the width direction) The sum of the diameter of the imaginary circle forming the connecting line connecting the lines and the diameter of the imaginary circle forming the connecting line connecting the second and third lines (i.e., forming the two adjacent edges in the width direction The sum of the diameters of the imaginary circles).

In addition, the distance between the third line and the fourth line of the hole electrode 110 on the cross section can be made equal to the distance between the first line and the second line.

Accordingly, the distance between the third line and the fourth line also forms a connecting line connecting the second line and the third line, the diameter of a virtual circle forming a connecting line connecting the first line and the third line May be designed to be smaller than the sum of the diameters of the imaginary circles (i.e., the sum of the diameters of the imaginary circles forming the two adjacent edges in the width direction).

In other words, virtual circles forming a connection line connecting the first line and the third line of the hole electrode 110 and virtual circles forming the connection line connecting the second line and the fourth line do not overlap each other, A virtual circle forming a connection line connecting the first line and the third line and a virtual circle forming a connection line connecting the first line and the fourth line may overlap each other.

Likewise, virtual circles forming a connection line connecting the second line and the third line and virtual circles forming a connection line connecting the second line and the fourth line may overlap each other.

The design of the hole electrode 110 as described above is such that when the hole electrode 110 is formed in the size of several to several tens of micrometers, the hole electrode 110 is not angled or irregular It is possible to secure a maximum electrode area.

The hole electrode 110 is exposed through the opening portion 140a of the insulating layer 140 and the opening portion 140a of the insulating layer 140 is exposed through the opening portion 140a of the insulating layer 140. [ 140a are formed in the openings 104a of the second conductivity type semiconductor layer 104. [

The hole electrode 110 exposed through the opening 140a of the insulating layer 140 is in contact with the first conductive semiconductor layer 102 and the first electrode layer 150 and the first conductive semiconductor layer 102 May be electrically connected.

Here, like the hole electrode 110, at least one corner is formed along a part of the imaginary circle. The radius r2 of the virtual circle forming at least one corner of the opening 104a may be larger than the radius r1 of the virtual circle forming the corner of the hole electrode 110. [

The width W2 of the opening 104a is larger than the width W1 of the hole electrode 110 and the hole electrode 110 is disposed within the opening 104a with a predetermined margin distance.

At this time, the conductive material forming the first electrode layer 150 or the hole electrode 110 is removed from the opening of the insulating layer 140 so as not to be exposed at the height where the active layer 103 or the second conductive type semiconductor layer 104 is formed 140a may be formed in a region where the first conductive semiconductor layer 102 is present.

The opening 104a of the second conductivity type semiconductor layer 104 is formed in the opening 130a of the cover metal layer 130 and has a radius of a virtual circle forming at least one corner of the opening 104a r2 is smaller than the radius r3 of the imaginary circle forming at least one corner of the opening 130a of the cover metal layer 130. [

The width W3 of the opening portion 130a is larger than the width W2 of the opening portion 104a and the opening portion 104a is disposed within the opening portion 130a with a predetermined margin distance.

Similarly, the opening 130a of the cover metal layer 130 is formed in the opening 120a of the second electrode layer 120, and the radius r3 of the imaginary circle forming at least one corner of the opening 130a is (R4) of an imaginary circle forming at least one corner of the opening 120a of the second electrode layer 130. [

The width W4 of the opening portion 120a is larger than the width W3 of the opening portion 130a and the opening portion 130a is disposed within the opening portion 120a with a predetermined margin distance.

As described above, when the circular hole electrodes are formed to have a size of several to several tens of micrometers by forming openings for exposing the hole electrodes 110 and the hole electrodes 110, It is possible to prevent defects from being generated by contact with each other, to prevent irregular portions or irregular portions from being formed in the hole electrode 110, and to ensure a maximum electrode area.

Therefore, the light emitting device 100 according to an embodiment of the present invention is formed so that the corner of the hole electrode has a predetermined radius of curvature, rather than the circular hole electrode, so that the hole electrode having a regular shape can be easily and accurately Accordingly, it is possible to prevent the current from being crowded at the hole electrode, and thus the luminous efficiency can be improved.

In addition, even if a hole electrode having a smaller size than the circular hole electrode is formed as described above, the maximum electrode area can be ensured, so that current loss and loss of the light emitting area can be minimized.

In addition, irregularities may be formed on the upper surface of the first conductivity type semiconductor layer 102.

The irregularities can be introduced by various commonly used techniques, but the formation process of irregularities according to an embodiment of the present invention is shown in FIGS. 3A to 3C.

3A, a light emitting structure 101 in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are stacked is grown on a support substrate 200 having a concavo-convex pattern. At this time, in order to form the irregularities on the upper surface of the first conductivity type semiconductor layer, the first conductivity type semiconductor layer is first grown on the support substrate 200, and then the active layer and the second conductivity type semiconductor layer are successively grown.

3B, when the supporting substrate 200 is separated from the light emitting structure 101, a first irregular pattern corresponding to the irregular pattern provided on the supporting substrate 200 is formed on one surface of the light emitting structure 101 Exposed.

3C, it is possible to introduce a second concave-convex pattern different from the first concave-convex pattern by performing PEC etching on one surface of the light emitting structure 101 in which the first concave-convex pattern is exposed.

As described above, the extraction efficiency to the upper portion of the light generated from the light emitting structure 101 is further improved by introducing different concave-convex patterns on the light emitting structure 101, more specifically, on the upper surface of the first conductivity type semiconductor layer 102 .

FIG. 4A is a schematic cross-sectional view of a semiconductor light emitting device according to another embodiment of the present invention, and FIGS. 4B and 4C are longitudinal sectional views taken along line C-C and D-D in FIG. 4A, respectively.

Unlike the semiconductor light emitting device shown in FIGS. 2B and 2C, the cover metal layer 130 formed in the semiconductor light emitting device shown in FIGS. 4B and 4C is formed in a part of the lower surface of the second electrode layer 120, Are formed along the outer periphery of the light emitting structure 101 so as to surround the light emitting structure 101.

That is, in the semiconductor light emitting device shown in FIGS. 2B and 2C, the cover metal layer 130 is formed substantially on the lower front surface of the light emitting structure 101 and the opening 130a is formed at a position where the hole electrode 110 is formed 4B and 4C, the cover metal layer 130 is formed to have a predetermined width along the outer periphery of the light emitting structure 101 and is not formed on the inside.

Here, the cover metal layer 130 is formed in a larger width to expose the electrode pad 180 at both corners present on the same side of the light emitting structure 101.

Accordingly, the cover metal layer 130 may act as an etching stopper in a semiconductor etching process for forming the electrode pad 180 and may prevent the metal material of the second electrode layer 120 from being diffused or contaminated can do.

However, in the case of the second electrode layer 120 in which the cover metal layer 130 is not formed, the insulating layer 140 can prevent the metal material of the second electrode layer 120 from being diffused or contaminated.

When the cover metal layer 130 covers both the side surface and the bottom surface of the second electrode layer 120 as in the semiconductor light emitting device shown in FIGS. 2B and 2C, a part of the cover metal layer 130 is electrically connected to the second conductive semiconductor layer 104).

In this case, since the cover metal layer 130 is formed to cover both the side surface and the bottom surface of the second electrode layer 120, the second electrode layer 120 is formed under the second conductive type semiconductor layer 104 The area for contacting the cover metal layer 130 as well as the area must be present at the same time.

That is, in order to prevent a part of the metal forming the cover metal layer 130 from contacting with the first conductivity type semiconductor layer 102 or the active layer 103 to cause a short circuit, A further process margin must be secured.

The area for forming the second electrode layer 120 by the process margin for forming the cover metal layer 130 must be relatively reduced. This reduces the area of reflection of light generated from the light emitting structure 101, that is, .

Therefore, the cover metal layer 130 applied to the semiconductor light emitting device shown in FIGS. 4B and 4C is formed by partially overlapping a part of the lower surface of the second electrode layer 120 disposed along the outer periphery of the light emitting structure 101, And the cover metal layer 130 is not formed on the second electrode layer 120 disposed on the inner side of the light emitting structure 101.

That is, the cover metal layer 130 is formed so as to cover only a part of the lower surface of the second electrode layer 120 and one side surface thereof, so that the cover metal layer 130 covers the second surface of the second electrode layer 120, The area where the second electrode layer 120 is formed by the process margin to be secured in the lower portion of the conductive type semiconductor layer 104 can be increased.

The reflection efficiency of light generated from the light emitting structure 101 increases as the area of the second electrode layer 120 formed on the lower surface of the second conductivity type semiconductor layer 104 increases. Can also be improved.

The protective layer 190 formed on the semiconductor light emitting device 100 may include an oxide layer such as SiO 2 , a nitride layer such as SiN x , or an insulating layer such as SiON and MgF 2 . have.

5A is a cross-sectional view schematically illustrating a semiconductor light emitting device according to another embodiment of the present invention, and FIGS. 5B and 5C are longitudinal sectional views taken along line C-C and line D-D in FIG. 5A, respectively.

In the semiconductor light emitting device shown in the drawings, the cover metal layer 130 is formed on at least one edge of the light emitting structure 101, preferably at both edges present within the same side of the light emitting structure 101.

At this time, the cover metal layer 130 is formed so as to surround only a part of the lower surface of the second electrode layer 120 and one side surface in both corner regions existing within the same side of the light emitting structure 101.

The cover metal layer 130 is exposed on both edges of the light emitting structure 101 and the electrode pad 180 is formed on the exposed cover metal layer 130.

The cover metal layer 130 may serve as an etching stopper in a semiconductor etching process for forming the electrode pad 180. The insulating metal layer 130 may function as an etching stopper in an area where the cover metal layer 130 is not formed, It is possible to prevent the metal material of the second electrode layer 120 from being diffused or contaminated.

As described above, the area of the second electrode layer 120 can be increased by the process margin for forming the cover metal layer 130 by minimizing the area where the cover metal layer 130 is formed.

Accordingly, the light reflection area can be increased by the area of the widened second electrode layer 120, which results in an increase in the light emitting area of the semiconductor light emitting device and an increase in the light emitting efficiency.

6 is an exploded perspective view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a lighting device.

Referring to FIG. 6, the illumination device according to the present embodiment includes a diffusion cover 1010, a semiconductor light emitting device module 1020, and a body part 1030.

The body 1030 may receive the semiconductor light emitting device module 1020 and the diffusion cover 1010 may be disposed on the body 1030 to cover the upper portion of the semiconductor light emitting device module 1020 .

The body 1030 is not limited as long as it can receive and support the semiconductor light emitting device module 1020 and supply electrical power to the semiconductor light emitting device module 1020. For example, as shown, the body portion 1030 may include a body case 1031, a power supply 1033, a power supply case 1035, and a power connection 1037. [

The power supply unit 1033 is accommodated in the power supply case 1035 and is electrically connected to the semiconductor light emitting device module 1020 and may include at least one IC chip.

The IC chip can control, convert, or control the characteristics of the power supplied to the semiconductor light emitting device module 1020.

The power supply case 1035 can receive and support the power supply device 1033 and the power supply case 1035 in which the power supply device 1033 is fixed can be located inside the body case 1031 .

The power connection portion 115 is disposed at the lower end of the power source case 1035 and can be connected to the power source case 1035. [ The power connection unit 115 may be electrically connected to the power supply unit 1033 in the power supply case 1035 and may serve as a path through which external power may be supplied to the power supply unit 1033. [

The semiconductor light emitting element module 1020 includes a substrate 1023 and a semiconductor light emitting element 1021 disposed on the substrate 1023. [

The semiconductor light emitting device module 1020 may be provided on the body case 1031 and electrically connected to the power supply device 1033.

The substrate 1023 is not limited as long as it is a substrate capable of supporting the semiconductor light emitting element 1021, and may be, for example, a printed circuit board including wiring. The substrate 1023 may have a shape corresponding to the fixing portion on the upper portion of the body case 1031 so as to be stably fixed to the body case 1031. [

The semiconductor light emitting device 1021 may include at least one of the semiconductor light emitting devices according to various embodiments of the present invention described above.

The diffusion cover 1010 is disposed on the semiconductor light emitting device 1021 and may be fixed to the body case 1031 to cover the semiconductor light emitting device 1021. [

The diffusion cover 1010 may have a light-transmitting material and may control the shape and the light transmittance of the diffusion cover 1010 to control the directivity characteristics of the illumination device. Accordingly, the diffusion cover 1010 can be modified into various forms depending on the purpose and application of the illumination device.

7 is a cross-sectional view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a display device.

The display device of this embodiment includes a display panel 2110, a backlight unit BLU1 for providing light to the display panel 2110, and a panel guide 2100 for supporting the lower edge of the display panel 2110. [

The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 2110, a gate driving PCB for supplying a driving signal to the gate line may be further disposed.

Here, the gate driving PCBs 2112 and 2113 are not formed on a separate PCB, but may be formed on a thin film transistor substrate.

The backlight unit (BLU1) includes a light source module including at least one substrate (2150) and a plurality of semiconductor light emitting elements (2160). Further, the backlight unit BLU1 may further include a bottom cover 2180, a reflection sheet 2170, a diffusion plate 2131, and optical sheets 2130. [

The bottom cover 2180 is opened to cover the substrate 2150, the semiconductor light emitting element 2160, the reflection sheet 2170, the diffusion plate 2131 and the optical sheets 2130.

In addition, the bottom cover 2180 can be engaged with the panel guide 2100. The substrate 2150 may be disposed under the reflective sheet 2170 and surrounded by the reflective sheet 2170. However, the present invention is not limited thereto, and it may be placed on the reflective sheet 2170 when the reflective material is coated on the surface.

In addition, a plurality of substrates 2150 may be arranged so that a plurality of substrates 2150 are arranged side by side, but it is not limited thereto and may be formed as a single substrate 2150.

The semiconductor light emitting device 2160 may include at least one of the semiconductor light emitting devices according to various embodiments of the present invention described above.

The semiconductor light emitting elements 2160 may be regularly arranged on the substrate 2150 in a predetermined pattern.

Further, a lens 2210 is disposed on each of the semiconductor light emitting elements 2160, so that the uniformity of light emitted from the plurality of semiconductor light emitting elements 2160 can be improved.

The diffusion plate 2131 and the optical sheets 2130 are located on the semiconductor light emitting element 2160. The light emitted from the semiconductor light emitting element 2160 may be supplied to the display panel 2110 in the form of a surface light source via the diffusion plate 2131 and the optical sheets 2130. [

As described above, the semiconductor light emitting device according to the embodiments of the present invention can be applied to the direct-type display device as in the present embodiment.

8 is a cross-sectional view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a display device.

The display device having the backlight unit according to the present embodiment includes a display panel 3210 on which an image is displayed, and a backlight unit BLU2 disposed on the back surface of the display panel 3210 to emit light.

The display device further includes a frame 240 supporting the display panel 3210 and storing the backlight unit BLU2 and covers 3240 and 3280 surrounding the display panel 3210. [

The display panel 3210 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. At the edge of the display panel 3210, a gate driving PCB for supplying a driving signal to the gate line may be further disposed.

Here, the gate driving PCB may not be formed on a separate PCB, but may be formed on the thin film transistor substrate.

The display panel 3210 is fixed by the covers 3240 and 3280 located at the upper and lower portions thereof and the cover 3280 located at the lower portion can be engaged with the backlight unit BLU2.

The backlight unit BLU2 for providing light to the display panel 3210 includes a lower cover 3270 partially opened on the upper surface thereof, a light source module disposed on one side of the inner side of the lower cover 3270, And a light guide plate 3250 for converting the light into the plane light.

The backlight unit BLU2 of the present embodiment is disposed on the light guide plate 3250 and includes optical sheets 3230 for diffusing and condensing light, a light guide plate 3250 disposed below the light guide plate 3250, And a reflective sheet 3260 that reflects the light toward the display panel 3210. [

The light source module includes a substrate 3220 and a plurality of semiconductor light emitting devices 3110 spaced apart from each other on a surface of the substrate 3220.

The substrate 3220 is not limited as long as it supports the semiconductor light emitting device 3110 and is electrically connected to the semiconductor light emitting device 3110, and may be, for example, a printed circuit board.

The semiconductor light emitting device 3110 may include at least one of the semiconductor light emitting devices according to various embodiments of the present invention described above.

The light emitted from the light source module is incident on the light guide plate 3250 and is supplied to the display panel 3210 through the optical sheets 3230. The point light source emitted from the semiconductor light emitting elements 3110 through the light guide plate 3250 and the optical sheets 3230 can be transformed into a surface light source.

As described above, the semiconductor light emitting device according to the embodiments of the present invention can be applied to an edge type display device like this embodiment.

9 is a cross-sectional view illustrating an example in which a semiconductor light emitting device according to an embodiment of the present invention is applied to a headlamp.

9, the head lamp includes a lamp body 4070, a substrate 4020, a semiconductor light emitting element 4010, and a cover lens 4050. [

Furthermore, the head lamp may further include a heat dissipating unit 4030, a support rack 4060, and a connecting member 4040.

Substrate 4020 is fixed by support rack 4060 and is spaced apart on lamp body 4070.

The substrate 4020 is not limited as long as it can support the semiconductor light emitting device 4010, and may be a substrate having a conductive pattern such as a printed circuit board. The semiconductor light emitting element 4010 is located on the substrate 4020 and can be supported and fixed by the substrate 4020. [

In addition, the semiconductor light emitting device 4010 may be electrically connected to an external power source through a conductive pattern of the substrate 4020. In addition, the semiconductor light emitting device 4010 may include at least one semiconductor light emitting device according to the embodiments of the present invention described above.

The cover lens 4050 is located on the path through which the light emitted from the semiconductor light emitting element 4010 travels.

For example, as shown in the figure, the cover lens 4050 may be disposed apart from the semiconductor light emitting device 4010 by the connecting member 4040, and may be disposed in a direction in which light is emitted from the semiconductor light emitting device 4010 .

The directional angle and / or color of the light emitted from the headlamp to the outside by the cover lens 4050 can be adjusted.

The connecting member 4040 may serve as a light guide to fix the cover lens 4050 to the substrate 4020 and to surround the semiconductor light emitting device 4010 to provide the light emitting path 4045 .

At this time, the connection member 4040 may be formed of a light reflective material or may be coated with a light reflective material. The heat dissipation unit 4030 may include a heat dissipation fin 4031 and / or a heat dissipation fan 4033 to dissipate the heat generated when the semiconductor light emitting device 4010 is driven.

As described above, the semiconductor light emitting device according to the embodiments of the present invention can be applied to a head lamp such as the present embodiment, particularly, a headlamp for a vehicle.

While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments. Such changes and modifications are intended to fall within the scope of the present invention unless they depart from the scope of the present invention. Accordingly, the scope of the present invention should be determined by the following claims.

102: first conductivity type semiconductor layer 103: active layer
104: second conductive type semiconductor layer 110: hole electrode
120: second electrode layer 130: cover metal layer
140: insulating layer 150: first electrode layer
160: bonding metal layer 170: conductive substrate
180: electrode pad 190: protective layer

Claims (9)

A light emitting structure in which a conductive substrate, a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer are stacked,
A first electrode layer and an insulating layer are formed between the conductive substrate and the second conductive type semiconductor layer,
A second electrode layer and a cover metal layer are formed under the second conductive semiconductor layer,
Wherein the first electrode layer includes a plurality of hole electrodes extending through the insulating layer, the second conductivity type semiconductor layer, and the active layer to the inside of the first conductivity type semiconductor layer,
The top surface of the hole electrode on the cross section includes a first line, a second line, a third line and a fourth line which are straight lines,
The first line being parallel to the second line,
The third line is parallel to the fourth line,
Wherein the connection line connecting the first line and the third line is a non-
Semiconductor light emitting device.
The method according to claim 1,
A connection line connecting the first line and the third line is formed along a part of a virtual circle,
Semiconductor light emitting device.
The method according to claim 1,
And the connection line connecting the second line and the fourth line is a non-linear type,
Semiconductor light emitting device.
The method of claim 3,
A connecting line connecting the second line and the fourth line is formed along a part of the circle,
Semiconductor light emitting device.
5. The method of claim 4,
The sum of the diameter of a virtual circle forming a connection line connecting the first line and the third line and the diameter of a virtual circle forming a connection line connecting the second line and the fourth line, And a third line, and a connection line connecting the second line and the fourth line,
Semiconductor light emitting device.
6. The method of claim 5,
Wherein a distance between the first line and the second line on the cross section is a diameter of a virtual circle forming a connection line connecting the first line and the third line and a connection line connecting the second line and the third line Which is smaller than the sum of the diameters of the imaginary circles forming the line,
Semiconductor light emitting device.
6. The method of claim 5,
Wherein the distance between the third line and the fourth line on the cross section is a diameter of a virtual circle forming a connection line connecting the first line and the third line and a connection line connecting the second line and the third line Which is smaller than the sum of the diameters of the imaginary circles forming the line,
Semiconductor light emitting device.
The method according to claim 1,
The hole electrode is formed in the opening of the insulating layer on the cross section,
Wherein at least one corner of the opening of the insulating layer is formed along a portion of a virtual circle having a diameter larger than a virtual circle forming an edge of the hole electrode,
Semiconductor light emitting device.
The method according to claim 1,
The first conductive semiconductor layer may be formed on the first conductive semiconductor layer.
Semiconductor light emitting device.
KR1020150033444A 2014-12-19 2015-03-10 Semiconductor light emitting diode KR20160110692A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020150033444A KR20160110692A (en) 2015-03-10 2015-03-10 Semiconductor light emitting diode
DE112015005634.3T DE112015005634T5 (en) 2014-12-19 2015-12-04 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THEM
PCT/KR2015/013270 WO2016099061A1 (en) 2014-12-19 2015-12-04 Semiconductor light emitting device and method of manufacturing the same
US15/527,807 US10193020B2 (en) 2014-12-19 2015-12-04 Semiconductor light emitting device and method of manufacturing the same
CN201510954206.2A CN105720161B (en) 2014-12-19 2015-12-17 Light emitting semiconductor device
CN201810927330.3A CN108807632B (en) 2014-12-19 2015-12-17 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150033444A KR20160110692A (en) 2015-03-10 2015-03-10 Semiconductor light emitting diode

Publications (1)

Publication Number Publication Date
KR20160110692A true KR20160110692A (en) 2016-09-22

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Country Status (1)

Country Link
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