KR20160106007A - 백 콘택트 방식의 태양 전지 모듈의 제조 방법 - Google Patents

백 콘택트 방식의 태양 전지 모듈의 제조 방법 Download PDF

Info

Publication number
KR20160106007A
KR20160106007A KR1020157037125A KR20157037125A KR20160106007A KR 20160106007 A KR20160106007 A KR 20160106007A KR 1020157037125 A KR1020157037125 A KR 1020157037125A KR 20157037125 A KR20157037125 A KR 20157037125A KR 20160106007 A KR20160106007 A KR 20160106007A
Authority
KR
South Korea
Prior art keywords
solar cell
conductive
flexible printed
electrode
particles
Prior art date
Application number
KR1020157037125A
Other languages
English (en)
Korean (ko)
Inventor
시게오 마하라
시아오게 왕
신야 우에노야마
Original Assignee
세키스이가가쿠 고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세키스이가가쿠 고교가부시키가이샤 filed Critical 세키스이가가쿠 고교가부시키가이샤
Publication of KR20160106007A publication Critical patent/KR20160106007A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
KR1020157037125A 2014-01-08 2015-01-07 백 콘택트 방식의 태양 전지 모듈의 제조 방법 KR20160106007A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-001590 2014-01-08
JP2014001590 2014-01-08
PCT/JP2015/050234 WO2015105121A1 (ja) 2014-01-08 2015-01-07 バックコンタクト方式の太陽電池モジュールの製造方法

Publications (1)

Publication Number Publication Date
KR20160106007A true KR20160106007A (ko) 2016-09-09

Family

ID=53523946

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157037125A KR20160106007A (ko) 2014-01-08 2015-01-07 백 콘택트 방식의 태양 전지 모듈의 제조 방법

Country Status (4)

Country Link
JP (1) JPWO2015105121A1 (ja)
KR (1) KR20160106007A (ja)
CN (1) CN105324854A (ja)
WO (1) WO2015105121A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011869A (ja) 2003-06-17 2005-01-13 Sekisui Jushi Co Ltd 太陽電池モジュールおよびその製造方法
JP2012204388A (ja) 2011-03-23 2012-10-22 Sony Chemical & Information Device Corp 太陽電池モジュール、太陽電池モジュールの製造方法、タブ線が巻装されたリール巻装体
JP2013063443A (ja) 2011-09-15 2013-04-11 Toppan Printing Co Ltd アルミペーストはんだ、アルミ導電性部材の接合方法及び太陽電池モジュールの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011040189A (ja) * 2009-08-07 2011-02-24 Sekisui Chem Co Ltd 導電性粒子、異方性導電材料及び接続構造体
JP5025825B2 (ja) * 2010-07-28 2012-09-12 積水化学工業株式会社 絶縁性粒子付き導電性粒子、異方性導電材料及び接続構造体
DE102013204343A1 (de) * 2012-03-13 2013-09-19 Robert Bosch Gmbh Solarmodul und Verfahren zur Herstellung eines solchen
JP2013197343A (ja) * 2012-03-21 2013-09-30 Dexerials Corp 太陽電池モジュール及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005011869A (ja) 2003-06-17 2005-01-13 Sekisui Jushi Co Ltd 太陽電池モジュールおよびその製造方法
JP2012204388A (ja) 2011-03-23 2012-10-22 Sony Chemical & Information Device Corp 太陽電池モジュール、太陽電池モジュールの製造方法、タブ線が巻装されたリール巻装体
JP2013063443A (ja) 2011-09-15 2013-04-11 Toppan Printing Co Ltd アルミペーストはんだ、アルミ導電性部材の接合方法及び太陽電池モジュールの製造方法

Also Published As

Publication number Publication date
CN105324854A (zh) 2016-02-10
JPWO2015105121A1 (ja) 2017-03-23
WO2015105121A1 (ja) 2015-07-16

Similar Documents

Publication Publication Date Title
TWI556260B (zh) Conductive particles, anisotropic conductive materials and connecting structures
WO2007125903A1 (ja) 接着テープ及びそれを用いた太陽電池モジュール
JP6034177B2 (ja) 導電性粒子、導電材料及び接続構造体
JP5548053B2 (ja) 絶縁性粒子付き導電性粒子、絶縁性粒子付き導電性粒子の製造方法、異方性導電材料及び接続構造体
JP5318815B2 (ja) 太陽電池モジュール、太陽電池モジュールの製造方法
WO2014007237A1 (ja) 絶縁性粒子付き導電性粒子、導電材料及び接続構造体
CN103069504A (zh) 导电性粒子、导电性粒子的制造方法、各向异性导电材料及连接结构体
JP5798772B2 (ja) 太陽電池モジュール、太陽電池モジュールの製造方法、タブ線
CN103782351B (zh) 导电性粒子、导电材料及连接结构体
KR20140031225A (ko) 태양 전지 모듈, 태양 전지 모듈의 제조 방법, 도전성 접착제
KR102095291B1 (ko) 절연성 입자 부착 도전성 입자, 도전 재료 및 접속 구조체
JP6431411B2 (ja) 絶縁性粒子付き導電性粒子、導電材料及び接続構造体
WO2015105119A1 (ja) バックコンタクト方式の太陽電池モジュール用導電性粒子、導電材料及び太陽電池モジュール
WO2015105120A1 (ja) バックコンタクト方式の太陽電池モジュール用導電性粒子、導電材料及び太陽電池モジュール
CN108780677B (zh) 导电性粒子、导电材料以及连接结构体
JP2014029856A (ja) 絶縁性粒子付き導電性粒子、導電材料及び接続構造体
KR20160106007A (ko) 백 콘택트 방식의 태양 전지 모듈의 제조 방법
JP2015233129A (ja) バックコンタクト方式の太陽電池モジュール用の導電ペースト、並びにバックコンタクト方式の太陽電池モジュール及びその製造方法
JP6483958B2 (ja) 導電フィルム及び接続構造体
JP6445911B2 (ja) バックコンタクト方式の太陽電池モジュールの製造方法
JP2016167594A (ja) バックコンタクト方式の太陽電池モジュール用導電材料及び太陽電池モジュール
JP2016178303A (ja) 太陽電池モジュール用導電材料及び太陽電池モジュール
JP2016157935A (ja) 太陽電池モジュール用導電材料及び太陽電池モジュール
JP6333610B2 (ja) 導電性粒子、導電性粒子の製造方法、導電材料及び接続構造体

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination