KR20160076606A - Light emitting device - Google Patents

Abstract

A light emitting device according to an embodiment includes a body which has a cavity and a step structure around the cavity; electrodes which are arranged in the cavity; a light emitting chip which is arranged in the cavity; a transparent window which covers the upper side of the cavity and has an outer part arranged on the step structure; and an attachment member which is arranged between the transparent window and the body. The attachment member includes a first attachment member which is arranged between the outer lower surface of the transparent widow and the bottom of the step structure and a second attachment member which is attached between the outer part of the transparent window and the body. So, the light emitting device having the sealing structure of the transparent window can be provided.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

An embodiment relates to an ultraviolet light emitting element.

In general, a nitride semiconductor material including a Group V source such as nitrogen (N) and a Group III source such as gallium (Ga), aluminum (Al), or indium (In) has excellent thermal stability, Has a band structure and is widely used as a nitride semiconductor device, for example, a nitride semiconductor light emitting device in an ultraviolet region and a material for a solar cell.

The nitride-based material has a wide energy band gap of 0.7 eV to 6.2 eV, and is thus widely used as a material for a solar cell device due to its characteristics matching the solar spectrum region. In particular, ultraviolet light emitting devices have been utilized in various industrial fields such as a curing apparatus, a medical analyzer, a therapeutic apparatus, and a sterilizing, water purification, and purification system.

An embodiment provides a light emitting device having a sealing structure of a transparent window.

Embodiments provide a light emitting device having a double bonding member or a double sealing structure between a body and a transparent window.

The embodiment provides an ultraviolet light-emitting element having a moisture barrier structure.

A light emitting device according to an embodiment includes a body having a cavity and a stepped structure around the cavity; A plurality of electrodes disposed in the cavity; A light emitting chip disposed in the cavity; A transparent window covering the cavity and having an outer side disposed on the stepped structure; And a bonding member disposed between the transparent window and the body, wherein the bonding member includes: a first bonding member disposed between an outer bottom surface of the transparent window and a bottom of the step structure; And a second adhesive member adhered between the outside of the transparent window and the body.

A light emitting device according to an embodiment includes a body having a cavity and a stepped structure around the cavity; A plurality of electrodes disposed in the cavity; A light emitting chip disposed in the cavity; A transparent window covering the cavity and having an outer side disposed on the stepped structure; Wherein the step structure comprises a bottom having a lower surface than the top surface of the body and a recess having a depth less than the bottom at the outside of the bottom, Wherein the adhesive member includes a first adhesive member disposed in the groove and adhered to the projection of the transparent window and a second adhesive member adhered between the outer side of the transparent window and the body, 2 adhesive member.

According to the embodiment, moisture inflow can be blocked.

According to the embodiment, the reliability of the ultraviolet light-emitting element can be improved in a high-humidity condition or in water.

According to the embodiment, the light extraction efficiency can be improved.

Embodiments can provide a light emitting device having an ultraviolet light emitting device and an ultraviolet lamp having the same.

1 is a view showing a light emitting device according to a first embodiment.
2 is a partial enlarged view of the light emitting device of Fig.
3 is a view illustrating a light emitting device according to a second embodiment.
4 is a partially enlarged view of the light emitting device of Fig.
5 is a view illustrating a light emitting device according to a third embodiment.
6 is a view illustrating a light emitting device according to a fourth embodiment.
7 is a partial enlarged view of the light emitting device of Fig.
8 is a view illustrating a light emitting device according to the fifth embodiment.
9 is a view illustrating a light emitting device according to a sixth embodiment.
10 is a view illustrating a light emitting device according to a seventh embodiment.
11 is a view illustrating a light emitting device according to an eighth embodiment.
12 is a view illustrating an example of a light emitting chip of a light emitting device according to an embodiment
13 is a view showing another example of the light emitting chip of the light emitting device according to the embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on / over" or "under / under" Quot; on " and "under" are to be understood as being "directly" or "indirectly & . In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

≪ Light emitting element &

FIG. 1 is a cross-sectional view of a light emitting device according to a first embodiment, and FIG. 2 is a partial enlarged view of the light emitting device of FIG.

1 and 2, the light emitting device 100 includes a body 110 having an upper opened cavity, a plurality of electrodes 141 and 143 disposed in the cavity 111, a cavity 111, A light emitting chip 131 electrically connected to the plurality of electrodes 141 and 143, a plurality of lead electrodes 145 and 147 disposed on the lower surface of the body 110, a transparent window 161 on the cavity 111, And bonding members 121 and 123 between the outside of the transparent window 161 and the body 110. [

The body 110 includes a ceramic material, and the ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). As another example, the body 110 may include an insulating member such as a nitride or an oxide, and may preferably include a metal nitride having a higher thermal conductivity than the oxide or nitride. The material of the body 110 may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ or AlN, mK or more.

The body 110 includes a reflective portion 115 and the reflective portion 115 is disposed around the cavity 111 to reflect the light emitted from the light emitting chip 131.

The cavity 111 has a lower depth than the upper surface 11 of the body 110 at an upper portion of the body 110, and the upper portion of the cavity 111 is opened. Here, the upward direction of the cavity 111 may be a direction in which light emitted from the light emitting chip 131 is extracted.

The cavity 111 may have a circular, elliptical, or polygonal top view shape. The polygonal cavity 111 may have a chamfered shape, for example, a curved shape.

The width of the cavity 111 may be larger than the width of the lower portion. As another example, the width of the cavity 111 may be the same as the width of the upper portion and the width of the lower portion. The side wall 116 of the cavity 111 may be inclined or perpendicular to the bottom of the cavity 111, but the present invention is not limited thereto.

A metal layer may be disposed on the side wall 116 of the cavity 111, and the metal layer may be a reflective metal or a metal having a high thermal conductivity. The metal layer improves the light extraction efficiency in the cavity 111 and improves the heat radiation characteristic.

The transparent window 161 may be spaced apart from the light emitting chip 131. It is possible to prevent the transparent window 161 from being expanded due to the heat generated by the light emitting chip 131 by being separated from the light emitting chip 131. The area of the cavity 111 below the transparent window 161 may be an empty space or may be filled with a chemical element of a non-metallic or metallic material.

The step structure 12 is disposed on the upper side of the body 110, for example, inside the reflective portion 115. [ The step structure 12 may be disposed around the upper portion of the cavity 111.

The step structure 12 is disposed in an area lower than an upper surface 11 of the body 110 and includes a bottom 13 and a side 15. The side surface 15 of the step structure 12 may be a vertical surface or an inclined surface from the bottom 13. The step structure 12 may be disposed in a region between the side wall 116 of the cavity 111 and the upper surface 11 of the body 110. [

A plurality of electrodes 141, 142, 143, 144, 145, 147 may be coupled to the body 110. The plurality of electrodes 141, 142, 143, 144, 145 and 147 include first and second electrodes 141 and 143 disposed in the cavity 111, first and second lead electrodes 145 and 147 disposed on the lower surface of the body 110, A first connection electrode 142 that is disposed in the first electrode 141 and connects the first electrode 141 and the first lead electrode 145 and a second connection electrode 142 that connects the second electrode 143 and the second lead electrode 147, Two connecting electrodes 144 may be included.

The first and second electrodes 141 and 143 may extend from the bottom of the cavity 111 to the interior of the body 110. The first electrode 141 may be connected to the first lead electrode 145 through the first connection electrode 142 and the second electrode 143 may be connected to the second connection electrode 142 through the second connection electrode 142. [ And may be connected to the lead electrode 145.

The first and second lead electrodes 145 and 147 are disposed on the lower surface of the body 110 and can supply power and dissipate heat conducted from the body 110. The bottom surface area of the first or second lead electrode 145 or 147 may be wider than the top surface area of the first or second electrode 141 or 143. At least one of the first and second lead electrodes 145 and 147 may be arranged in a plurality.

At least one of the first and second connection electrodes 142 and 144 may be disposed in plural. The first and second connection electrodes 142 and 144 may have a via structure and may be electrically connected to a circuit pattern inside the body 110.

The plurality of electrodes 141, 142, 143, 144, 145 and 147 selectively include a metal layer such as Pt, Ti, Cu, Ni, Au, Ta, can do. Each of the electrodes 141, 142, 143, 144, 145, 147 may be formed as a single layer or a multilayer. Here, in the multi-layered electrode structure, gold (Au) material having good bonding can be disposed on the uppermost layer, and materials of titanium (Ti), chromium (Cr), and tantalum Platinum (Pt), nickel (Ni), copper (Cu), or the like may be disposed on the intermediate layer. The present invention is not limited to a laminated structure of such electrodes.

The light emitting chip 131 may be disposed in the cavity 111. The light emitting chip 131 may be disposed on at least one of the first and second electrodes 141 and 143. When the light emitting chip 131 is disposed on the first electrode 141, the bonding member 130 may bond the first electrode 141 and the light emitting chip 131. The light emitting chip 131 may be flip-chip bonded in the cavity 111, but the present invention is not limited thereto.

As another example, the light emitting chip 131 may be disposed on the first and second electrodes 141 and 143. As another example, the light emitting chip 131 may be disposed on the body 110 rather than the first and second electrodes 141 and 143. As another example, the light emitting chip 131 may be disposed on a heat dissipation plate made of a metal, which is electrically isolated from the first and second electrodes 141 and 143, but is not limited thereto.

The light emitting chip 131 may be connected to the first and second electrodes 141 and 143 through connecting members 133 and 135. The connecting members 133 and 135 include wires made of a conductive material.

The light emitting chip 131 may be an ultraviolet light emitting diode, and may be an ultraviolet light emitting diode having a wavelength of 200 nm to 405 nm. That is, the light emitting chip 131 may emit a wavelength of 200 nm to 289 nm, emit a wavelength of 290 nm to 319 nm, or emit a wavelength of 320 nm to 405 nm. A protective element may be further disposed in the cavity 111, but the present invention is not limited thereto.

The transparent window 161 is disposed on the body 110. The transparent window 161 may cover the cavity 111 and may be coupled to the body 110. The upper surface of the transparent window 161 may be a flat surface, a concave surface, or a convex surface. The lower surface of the transparent window 161 may be a flat surface, a concave surface, or a convex surface.

The transparent window 161 may comprise a glass-based material. The transparent window 161 is, for _{example, LiF, MgF 2, CaF 2} , BaF 2, Al 2 O 3, SiO 2 or the optical glass can be formed of a transparent material of the (N-BK7), and, in the case of SiO _2, kwojeu Crystal or UV Fused Silica. In addition, the transparent window 161 may be a low iron glass.

An area between the transparent window 161 and the body 110 may be a double-adhesive structure or a double-sealed structure.

The outer side of the transparent window 161 is disposed on the step structure 12 of the body 110. The depth T0 of the bottom 13 of the step structure 12 is equal to the thickness of the transparent window 161 or lower than the lower surface of the transparent window 161 from the top surface 11 of the body 110 And the present invention is not limited thereto.

The bonding members 121 and 123 include a first bonding member 121 disposed between the lower surface of the transparent window 161 and the bottom 13 of the step structure 12, And a second adhesive member 123 disposed on the upper surface. The first adhesive member 121 adheres the outer bottom surface of the transparent window 161 to the step structure 12 and the second adhesive member 123 adheres to the outer upper surface of the transparent window 161 and the body 110. [ As shown in Fig.

The second adhesive member 123 may have a width larger than an interval between the outer upper surface of the transparent window 161 and the upper surface 11 of the body 110 and between the transparent window 161 and the body 110 The gap can be covered. The second adhesive member 123 may be disposed along each side of the transparent window 161 and protrude above the upper surface 11 of the body 110. The shape of the second adhesive member 123 protruding from the upper surface 11 of the body 110 may be hemispherical, elliptic or polygonal, but is not limited thereto.

A portion 124 of the second adhesive member 123 may be disposed between the side surface of the transparent window 161 and the side surface 15 of the step structure 12 and adhered thereto. A portion 124 of the second adhesive member 123 may be in contact with the first adhesive member 121. [

The first and second adhesive members 121 and 123 may block moisture penetrating through the region between the transparent window 161 and the body 110 by bonding the transparent window 161 to the body 110 . Also, since the first and second adhesive members 121 and 123 provide long infiltration paths of moisture, it is possible to suppress moisture penetration. The first and second adhesive members 121 and 123 may fix the transparent window 161 and block moisture penetration.

The first and second adhesive members 121 and 123 may be silicon, a Teflon film, an Ag paste, a UV adhesive, a Pb-free low temperature glass, an acrylic adhesive, a ceramic adhesive, or the like. The first and second adhesive members 121 and 123 may be made of different materials, for example, the first adhesive member 121 may be a Teflon film and the second adhesive member 123 may be silicon. When the first and second adhesive members 121 and 123 are different materials, moisture penetration can be effectively suppressed by the interface region between the two adhesive members 121 and 123.

FIG. 3 is a view showing a light emitting device according to a second embodiment, and FIG. 4 is a partial enlarged view of the light emitting device of FIG. In describing the second embodiment, the same configuration as that of the first embodiment will be described with reference to the description of the first embodiment.

3 and 4, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes 141 and 143 coupled to the body 110, a plurality of electrodes 141 and 143 disposed on the lower surface of the body 110, A light emitting chip 131 disposed in the cavity 111 and a transparent window 161 disposed on the cavity 111. The transparent window 161 is disposed between the outside of the transparent window 161 and the body 110 (121, 123).

The body 110 includes a stepped structure 12 on which the transparent window 161 is seated and a second recess 14 disposed between the stepped structure 12 and the upper surface of the body 110 .

The transparent window 161 includes a first recess 166 that is lower than the upper surface of the tilted window 161 at its outer perimeter. The first recess 166 may have a depth T1 equal to or lower than the bottom depth of the first recess 14 of the body 110. The second recess 166 may have a depth equal to or less than the thickness of the outer lower portion of the transparent window 161. If the depth T1 of the second recess 166 is too deep, the outer rigidity of the transparent window 161 may be weakened. If the depth T1 is too thin, the adhesive strength may not be improved.

The first adhesive member 121 includes a first adhesive member 121 disposed on the step structure 12 and a second adhesive member 121 disposed on the first recess 166 of the transparent window 161 123).

The first adhesive member 121 is adhered between the bottom surface of the transparent window 161 and the bottom 13 of the step structure 12. The second adhesive member 123 is disposed on the first recess 166 of the transparent window 161 and on the second recess 14 of the body 110.

The widths W1 and W2 of the first recess 166 and the second recess 14 may be equal to or different from each other. For example, the width W2 of the second recess 14 may be greater than the width W1 of the first recess 166, which maintains the rigidity of the outer portion of the transparent window 161, Can be increased. The second recess 14 may not be formed.

A portion 126 of the second adhesive member 123 may be extended and adhered to a region between the side surface of the transparent window 161 and the side surface of the step structure 12. [ A part 126 of the second adhesive member 123 can be contacted on the first adhesive member 121. [

The upper surface of the second adhesive member 123 may protrude from the upper surface of the body 110 or the upper surface of the transparent window 161, and may be curved or flat. As another example, the second adhesive member 123 may extend to the upper surface of the body 110 and the upper surface of the transparent window 161.

The first and second adhesive members 121 and 123 may be silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, or ceramic adhesive. The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

5 is a view illustrating a light emitting device according to a third embodiment. In describing the third embodiment, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

5, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes 141 and 143 coupled to the body 110, a plurality of lead electrodes 145 and 147 disposed on the lower surface of the body 110, A transparent window 161 on the cavity 111 and adhesive members 121 and 123 disposed between the outer side of the transparent window 161 and the body 110. The light emitting chip 131 is disposed in the cavity 111, .

The body 110 includes a step structure 12 on which the transparent window 161 is seated and an inclined structure 17 inclined between the step structure 12 and the upper surface 11 of the body 110 do.

The inclined structure 17 includes an inclined surface extending from a side surface 15 of the step structure 12 to an upper surface 11 of the body 110. The inclined structure 17 is inclined at an angle? 1 of not less than 15 degrees and not more than 60 degrees from the upper surface 11 of the body 110. When the angle? 1 is less than the above range, And if it is larger than the above range, the rigidity of the upper portion of the upper portion of the body 110 becomes weak.

The adhesive members 121 and 123 include a first adhesive member 121 disposed between an outer bottom surface of the transparent window 161 and a bottom surface 13 of the step structure 12, And a second adhesive member (123) disposed between the inclined structures (17).

Since the second adhesive member 123 is disposed in the inclined structure 17 outside the transparent window 161, the adhesive force to the outer surface of the transparent window 161 can be enhanced. The second adhesive member 123 may extend to the upper surface of the body 110 and the upper surface of the transparent window 161.

The first and second adhesive members 121 and 123 may block moisture penetrating into the region between the body 110 and the transparent window 161. In addition, the second adhesive member 123 can provide a long infiltration path of moisture penetrating into the surface of the body 110 by the inclined structure 17, thereby effectively blocking moisture.

The first and second adhesive members 121 and 123 may be silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, or ceramic adhesive. The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

FIG. 6 is a view showing a light emitting device according to a fourth embodiment, and FIG. 7 is a partially enlarged view of the light emitting device of FIG. In describing the fourth embodiment, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

6 and 7, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes 141 and 143 coupled to the body 110, a plurality of electrodes 141 and 143 disposed on the lower surface of the body 110, A light emitting chip 131 disposed in the cavity 111, a transparent window 161 on the cavity 111, and a light emitting chip 131 disposed between the outside of the transparent window 161 and the body 110 And includes adhesive members 121 and 123 arranged thereon.

The body 110 includes a step structure 12 disposed around an upper portion of the cavity 111 and a groove 112 disposed in the step structure 12. [ The step structure 12 may include the groove 112. The grooves 112 may be disposed along the upper circumference of the body 110. The grooves 112 may be disposed outside the bottom 13 of the step structure 12. In this case, the side surface 15 of the step structure 12 can extend perpendicularly to the inside of the groove 112, so that the outer surface of the transparent window 161 can be guided.

The groove 112 may be disposed at a depth D1 lower than the depth D2 of the cavity 111 from the upper surface of the body 110. [ The grooves 112 are spaced from the sidewalls 116 of the cavity 111 with a depth D1 that is less than the bottom 13 of the step structure 12. The bottom 13 of the step structure 12 may be disposed between the groove 112 and the sidewall 116 of the cavity 111.

The transparent window 161 includes a protrusion 165 protruding downward from the body 110 at an outer lower portion thereof. The protrusions 165 may be disposed on the outer circumference of the transparent window 161 in a single or a plurality of positions. The protrusions 165 may be arranged in a loop shape when the protrusions 165 are single. The protrusions 165 may be arranged in each of the side walls 116 of the cavity 111, respectively.

The height D3 of the protrusion 165 may be equal to or thinner than the thickness of the transparent window 161, but is not limited thereto. When the height D3 of the protrusion 165 is greater than the thickness of the transparent window 161, the depth of the cavity 111 and the depth of the step structure 12 become deeper, There is a problem that it increases.

The distance between the protrusions 165 disposed on the opposite sides of the cavity 111 of the protrusion 165 of the transparent window 161 may be larger than the bottom width of the cavity 111.

The adhesive members 121 and 123 may include a first adhesive member 121 disposed on the groove 112 and bonded to the protrusion 165 of the transparent window 161 and a second adhesive member 121 disposed on the outer upper surface of the transparent window 161, And a second adhesive member 123 disposed between the upper surfaces of the first and second adhesive members 110 and 110.

The first adhesive member 121 may be disposed in the groove 112 and adhered to the periphery of the protrusion 165. A portion of the first adhesive member 121 may be extended and adhered between the bottom surface of the transparent window 161 and the bottom 13 of the step structure 12.

The second adhesive member 123 is adhered between the outer upper surface of the transparent window 161 and the upper surface of the body 110 to penetrate into the region between the transparent window 161 and the upper surface of the body 110, .

A portion 124 of the second adhesive member 123 is adhered between the outer surface of the transparent window 161 and the side surface of the step structure 12 so as to block moisture penetration. Also, the part 124 of the second adhesive member 123 can be adhered to the first adhesive member 121, thereby improving the moisture barrier effect. The inclined structure may be disposed between the step structure 12 and the upper surface 11 of the body 110 so that the adhesive area of the second adhesive member 123 may be improved.

The first and second adhesive members 121 and 123 may be silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, or ceramic adhesive. The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

8 is a side sectional view showing a light emitting device according to a fifth embodiment. In describing the fifth embodiment, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

8, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes 141 and 143 coupled to the body 110, a plurality of lead electrodes (not shown) disposed on the lower surface of the body 110, A transparent window 161 on the cavity 111 and an adhesive member 160 disposed between the outside of the transparent window 161 and the body 110. The light emitting chip 131 is disposed in the cavity 111, (121, 123).

At least one of the upper surface 164 and the lower surface of the transparent window 161 may include a curved surface. For example, the top surface 164 of the transparent window 161 can be arranged in a curved surface, and the curved surface can guide the light to a predetermined area, thereby improving the light extraction efficiency. The shape of the curved surface may include a hemispherical shape or an elliptical shape.

The transparent window 161 may be provided with a gradually thinner thickness from the central portion of the transparent window 161 toward the outer side by the curved surface shape.

The adhesive members 121 and 123 include a first adhesive member 121 disposed between the outer bottom surface of the transparent window 161 and the step structure 12 of the body 110, And a second adhesive member 123 disposed between the bodies 110. The second adhesive member 123 may be adhered on a curved surface that is the upper surface 164 of the transparent window 161. Accordingly, the area of adhesion of the second adhesive member 123 to the upper surface 164 of the transparent window 161 can be improved.

The protrusion 165 of the transparent window 161 may be adhered to the first adhesive member 121 filled in the groove 112 of the step structure 12 of the body 110. The grooves 112 and the protrusions 165 may not be formed, and a tilted structure may be further disposed on the step structure 12, but the present invention is not limited thereto.

The first and second adhesive members 121 and 123 may be silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, or ceramic adhesive. The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

9 is a side sectional view showing a light emitting device according to a sixth embodiment. In describing the sixth embodiment, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

8, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes coupled to the body 110, a light emitting chip 131 disposed in the cavity 111, A transparent window 161 on the transparent window 161 and adhesion members 121 and 123 disposed between the outer side of the transparent window 161 and the body 110.

The transparent window 161 includes a shape in which at least one of the upper surface and the lower surface 162 is a curved surface. For example, the lower surface 162 of the transparent window 161 includes a curved shape. The straight distance D3 of the curved surface may be the same as or narrower than the bottom width D4 of the cavity 111. [

The transparent window 161 has a thinner central portion due to the curved shape of the lower surface 162 and gradually becomes thicker toward the outer side from the central portion. Since the lower surface 162 of the transparent window 161 has a curved surface shape, the light incident on the curved surface can be changed in critical angle, and extraction efficiency can be improved.

The transparent window 161 may be disposed on a flat surface at an outer bottom surface thereof and may be bonded to the step structure 12 with a first adhesive member 121. A second adhesive member 123 may be adhered between the outer side of the transparent window 161 and the upper surface of the body 110.

The first and second adhesive members 121 and 123 may be silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, or ceramic adhesive. The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

10 is a side sectional view showing a light emitting device according to the seventh embodiment. In describing the seventh embodiment, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

10, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes 141 and 143 coupled to the body 110, a plurality of lead electrodes (not shown) disposed on the lower surface of the body 110, A transparent window 161 on the cavity 111 and an adhesive member 160 disposed between the outside of the transparent window 161 and the body 110. The light emitting chip 131 is disposed in the cavity 111, (121, 123).

The transparent window 161 includes a shape in which at least one or both of the upper surface and the lower surface 162 is curved. For example, the lower surface 162 of the transparent window 161 may be a flat surface or a curved surface, and the upper surface may be a flat surface or a curved surface.

The concavo-convex pattern 163A may be disposed on the upper surface of the transparent window 161, and the concavo-convex pattern 163A may be disposed in a region of the upper surface of the transparent window 161, .

The adhesive members 121 and 123 include first and second adhesive members 121 and 123. The first adhesive member 121 adheres the outer bottom surface of the transparent window 161 on the step structure 12 and the second adhesive member 123 adheres to the outer upper surface of the transparent window 161 and the upper surface of the body 110. [ As shown in FIG. The first and second adhesive members 121 and 123 may fix the transparent window 161 and block moisture penetration.

The first and second adhesive members 121 and 123 may be silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, or ceramic adhesive. The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

11 is a side sectional view showing a light emitting device according to an eighth embodiment. In describing the eighth embodiment, the same configuration as the above-described embodiment will be described with reference to the description of the embodiments disclosed above.

11, the light emitting device includes a body 110 having a cavity 111, a plurality of electrodes 141 and 143 coupled to the body 110, a plurality of lead electrodes (not shown) disposed on the lower surface of the body 110, A transparent window 161 on the cavity 111 and an adhesive member 160 disposed between the outside of the transparent window 161 and the body 110. The light emitting chip 131 is disposed in the cavity 111, (121, 123), and a waterproof layer (171).

The body 110 includes a stepped structure 12 and an inclined structure 17. The adhesive members 121 and 123 include first and second adhesive members 121 and 123. The first adhesive member 121 is disposed between the transparent window 161 and the step structure 12 of the body 110 to adhere the transparent window 161.

The first adhesive member 121 is disposed on the side of the transparent window 161 and the inclined structure 17 of the body 110 so that the outer side of the transparent window 161 is inclined to the inclined structure 17 It can be bonded. The first and second adhesive members 121 and 123 can fix the transparent window 161 and prevent moisture penetration. The inclined structure 17 may not be formed, but the present invention is not limited thereto.

A waterproof layer 171 may be disposed on the transparent window 161. The waterproof layer 171 may extend from the upper surface of the transparent window 161 to the upper surface of the body 110. [ The first and second adhesive members 121 and 123 may be bonded to the second adhesive member 123. The first and second adhesive members 121 and 123 may be made of silicon, Teflon film, Ag paste, UV adhesive, Pb-free low temperature glass, acrylic adhesive, The first and second adhesive members 121 and 123 may be formed of different materials, but the present invention is not limited thereto.

The waterproof layer 171 may include a silicone material or a Teflon film and may include the same or different materials as the first or second adhesive members 121 and 123. The waterproof layer 171 may be a transparent window 161 The second adhesive member 123 and the upper surface of the body 110 to effectively block water or moisture. The waterproof layer extends to the side and lower surface of the body 110, 110).

12 is a view showing an example of a light emitting chip according to an embodiment.

12, the light emitting chip 131 includes a first conductivity type semiconductor layer 41, an active layer 51 disposed on the first conductivity type semiconductor layer 41, An electron blocking structure layer 60 disposed on the electron blocking structure layer 60, and a second conductive semiconductor layer 73 disposed on the electron blocking structure layer 60.

The light emitting chip 131 may include one or more of a low conductivity layer 33, a buffer layer 31, and a substrate 21 under the first conductivity type semiconductor layer 41.

The light emitting chip 131 includes a first clad layer 43 between the first conductivity type semiconductor layer 41 and the active layer 51 and a second clad layer 43 between the active layer 51 and the second conductivity type semiconductor layer 73. 2 cladding layer 71 as shown in FIG.

The light emitting chip 131 may be an ultraviolet light emitting diode having a wavelength of 200 nm to 405 nm. That is, the light emitting chip 131 may emit a wavelength of 200 nm to 289 nm, emit a wavelength of 290 nm to 319 nm, or emit a wavelength of 320 nm to 405 nm.

The substrate 21 may be, for example, a translucent, conductive substrate or an insulating substrate. For example, the substrate 21 may include at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ . A plurality of protrusions (not shown) may be formed on the upper surface and / or the lower surface of the substrate 21, and each of the plurality of protrusions may include at least one of a hemispherical shape, a polygonal shape, and an elliptical shape, Or in the form of a matrix. The protrusions can improve the light extraction efficiency.

A plurality of compound semiconductor layers may be grown on the substrate 21. The plurality of compound semiconductor layers may be grown using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) A dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), or the like. However, the present invention is not limited thereto.

A buffer layer 31 may be formed between the substrate 21 and the first conductivity type semiconductor layer 41. The buffer layer 31 may be formed of at least one layer using Group II to VI compound semiconductors. The buffer layer 31 includes a semiconductor layer using a Group III-V compound semiconductor, for example, In _x Al _y Ga _1-xy N (0? _X? 1, 0? Y? Lt; = 1). The buffer layer 31 includes at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and ZnO.

The buffer layer 31 may be formed in a super lattice structure by alternately arranging different semiconductor layers. The buffer layer 31 may be formed to reduce the difference in lattice constant between the substrate 21 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 31 may have a value between lattice constants between the substrate 21 and the nitride semiconductor layer. The buffer layer 31 may not be formed, but the present invention is not limited thereto.

The low conductivity layer 33 may be disposed between the buffer layer 31 and the first conductive semiconductor layer 41. The low conductivity layer 33 is an undoped semiconductor layer and has lower electrical conductivity than the first conductivity type semiconductor layer 41.

The low conduction layer 33 may be formed of a Group II-VI compound semiconductor, for example, a Group III-V compound semiconductor. Even if the undoped semiconductor layer is intentionally doped with a conductive dopant, . The undoped semiconductor layer may not be formed, but the present invention is not limited thereto. The low conduction layer 33 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The low conductivity layer 33 may not be formed, but the present invention is not limited thereto.

The first conductive semiconductor layer 41 may be disposed between the active layer 51 and at least one of the substrate 21, the buffer layer 31, and the conductive layer 33. The first conductive semiconductor layer 41 may be formed of at least one of Group III-V and Group II-VI compound semiconductors doped with a first conductivity type dopant.

The first conductivity type semiconductor layer 41 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? . The first conductive semiconductor layer 41 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, And may be an n-type semiconductor layer doped with an n-type dopant such as Sn, Se, or Te.

The first conductivity type semiconductor layer 41 may be a single layer or a multilayer structure. The first conductive semiconductor layer 41 may have a superlattice structure in which at least two different layers are alternately arranged. The first conductive semiconductor layer 41 may be an electrode contact layer.

The first cladding layer 43 may include an AlGaN-based semiconductor. The first cladding layer 43 may be an n-type semiconductor layer having a dopant of the first conductivity type, for example, an n-type dopant. The first cladding layer 43 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May be an n-type semiconductor layer doped with an n-type dopant.

The first conductivity type semiconductor layer 41 and the first clad layer 43 may be formed of an AlGaN-based semiconductor to prevent absorption of ultraviolet wavelengths.

The active layer 51 may be formed of at least one of a single well, a single quantum well, a multi-well, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure .

The active layer 51 is formed by combining electrons (or holes) injected through the first conductive type semiconductor layer 41 and holes (or electrons) injected through the second conductive type semiconductor layer 73, And is a layer that emits light due to a band gap difference of an energy band according to a material of the active layer 51. [

The active layer 51 may be formed of a compound semiconductor. The active layer 51 may be formed of at least one of Group II-VI and Group III-V compound semiconductors.

When the active layer 51 is implemented as a multi-well structure, the active layer 51 includes a plurality of well layers and a plurality of barrier layers. In the active layer 51, a well layer and a barrier layer are alternately arranged. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles.

The well layer may be disposed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? The barrier layer may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y?

InGaN / AlGaN, InGaN / InGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InGaN / AlGaN, InGaN / AlGaN, / GaAs. ≪ / RTI >

The well layer of the active layer 51 according to the embodiment may be implemented with AlGaN, and the barrier layer may be implemented with AlGaN. The active layer 51 may emit ultraviolet light. The aluminum composition of the barrier layer has a composition higher than that of aluminum of the well layer. The aluminum composition of the well layer may range from 20% to 50%, and the aluminum composition of the barrier layer may range from 40% to 95%.

On the other hand, the electron blocking structure layer 60 includes a multi-layer structure. The electron blocking structure layer 60 may be a material having a composition of aluminum of 50% or more, or a material having a composition equal to or higher than the composition of aluminum of the barrier layer. The electron blocking structure layer 60 may be arranged as a single layer or a multi-layer AlGaN semiconductor, and may include a p-type dopant.

The second cladding layer 71 is disposed on the electron blocking structure layer 60. The second clad layer 71 is disposed between the electron blocking structure layer 60 and the second conductive type semiconductor layer 73.

The second cladding layer 71 may include an AlGaN-based semiconductor. The second cladding layer 71 may be a p-type semiconductor layer having a second conductivity type dopant, for example, a p-type dopant. The second cladding layer 71 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, Type dopant such as Ba.

The second conductive semiconductor layer 73 may be disposed on the second clad layer 71. The second conductivity type semiconductor layer 73 is a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? . The second conductive semiconductor layer 73 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, May be a doped p-type semiconductor layer.

The second conductivity type semiconductor layer 73 may be a single layer or a multilayer. The second conductive semiconductor layer 73 may have a superlattice structure in which at least two different layers are alternately arranged. The second conductive semiconductor layer 73 may be an electrode contact layer. The second conductivity type semiconductor layer 73 and the second clad layer 71 may be formed of an AlGaN-based semiconductor in order to prevent absorption of ultraviolet wavelengths.

The light emitting structure may include the first conductivity type semiconductor layer 41 to the second conductivity type semiconductor layer 73. As another example, in the light emitting structure, the first conductivity type semiconductor layer 41 and the first cladding layer 43 are the p-type semiconductor layer, the second cladding layer 71 and the second conductivity type semiconductor layer 73 are n Type semiconductor layer. Such a light emitting structure can be implemented by any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure.

The first electrode 91 may be electrically connected to the first conductive semiconductor layer 41 and the second electrode 95 may be electrically connected to the second conductive semiconductor layer 73. The first electrode 91 may be disposed on the first conductive semiconductor layer 41 and the second electrode 95 may be disposed on the second conductive semiconductor layer 73.

The first electrode 91 and the second electrode 95 may have a current diffusion pattern having an arm structure or a finger structure. The first electrode 91 and the second electrode 95 may be made of a metal having properties of an ohmic contact, an adhesive layer, and a bonding layer, and may not be transparent. The first electrode 93 and the second electrode 95 are formed of a material selected from the group consisting of Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Alloys.

An electrode layer 93 may be disposed between the second electrode 95 and the second conductive type semiconductor layer 73. The electrode layer 93 may be a light transmitting material that transmits light of 70% And may be formed of a metal or a metal oxide, for example. The electrode layer 93 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), ZnO, IrOx, RuOx, NiO, Al, Ag, Pd, Rh, Pt and Ir.

An insulating layer 81 may be disposed on the electrode layer 93. The insulating layer 81 may be disposed on the upper surface of the electrode layer 93 and the side surface of the semiconductor layer and may be selectively in contact with the first and second electrodes 91 and 95. The insulating layer 81 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr. The insulating layer 81 may be selectively formed of, for example, SiO2, Si3N4, Al2O3, or TiO2. The insulating layer 81 may be formed as a single layer or a multilayer, but is not limited thereto.

13 is a side sectional view showing another example of the light emitting chip according to the embodiment. In explaining FIG. 13, the same structure as FIG. 12 will be described with reference to FIG. 12. FIG.

13, the light emitting chip 102 includes a plurality of conductive layers 96, 97, 98, and 99 formed under the first electrode 91 and the second conductive type semiconductor layer 73 on the first conductive type semiconductor layer 41, And a second electrode.

The second electrode is disposed under the second conductive semiconductor layer 73 and includes a contact layer 96, a reflective layer 97, a bonding layer 98, and a support member 99. The contact layer 96 is in contact with the semiconductor layer, for example, the second conductivity type semiconductor layer 73. The contact layer 96 may be made of a low conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or Ni or Ag. A reflective layer 97 is disposed under the contact layer 96 and the reflective layer 97 is formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, And at least one layer made of a material selected from the group. The reflective layer 97 may be in contact with the second conductive semiconductor layer 73, but the present invention is not limited thereto.

A bonding layer 98 is disposed under the reflective layer 97 and the bonding layer 98 may be used as a barrier metal or a bonding metal. The material may be, for example, Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A channel layer 83 and a current blocking layer 85 are disposed between the second conductive type semiconductor layer 73 and the second electrode.

The channel layer 83 is formed along the bottom edge of the second conductive semiconductor layer 73, and may be formed in a ring shape, a loop shape, or a frame shape. The channel layer 83 comprises a transparent conductive material or an insulating material, such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , and TiO ₂ . The inner side of the channel layer 163 is disposed below the second conductivity type semiconductor layer 73 and the outer side is disposed further outward than the side surface of the light emitting structure.

The current blocking layer 85 may be disposed between the second conductive semiconductor layer 73 and the contact layer 96 or the reflective layer 97. The current blocking layer 85 may include at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ and TiO ₂ . As another example, the current blocking layer 85 may also be formed of a metal for Schottky contact.

The current blocking layer 161 is disposed to correspond to the first electrode 181 disposed on the light emitting structure 150A and the thickness direction of the light emitting structure 150A. The current blocking layer 161 may cut off current supplied from the second electrode 170 and diffuse the current blocking layer 161 to another path. The current blocking layer 85 may be disposed in one or a plurality of regions, and at least a part of the current blocking layer 85 may overlap the first electrode 91 in the vertical direction.

A support member 99 is formed under the bonding layer 98 and the support member 99 may be formed of a conductive material such as copper-copper, gold-gold, nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), and carrier wafers (e.g., Si, Ge, GaAs, ZnO, SiC and the like). As another example, the support member 99 may be embodied as a conductive sheet.

Here, the substrate of FIG. 12 is removed. The growth substrate may be removed by a physical method such as laser lift off or chemical method such as wet etching to expose the first conductivity type semiconductor layer 41. The first electrode 91 is formed on the first conductive type semiconductor layer 41 by performing the isolation etching through the direction in which the substrate is removed.

The upper surface of the first conductive semiconductor layer 41 may be formed with a light extraction structure (not shown) such as a roughness. An insulating layer (not shown) may be further disposed on the surface of the semiconductor layer, but the present invention is not limited thereto. Accordingly, the light emitting device 102 having a vertical electrode structure having the first electrode 91 and the supporting member 99 under the light emitting structure can be manufactured.

The light emitting device according to the embodiment can be applied to a light unit. The light unit is an assembly having one or a plurality of light emitting devices or light emitting device packages, and may include an ultraviolet lamp.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

12: step structure 17: inclined structure
110: body 111: cavity
121, 123: Adhesive member 131: Light emitting chip
141, 143: electrodes 142, 144:
145, 147: lead electrode 161: transparent window
171: Waterproof layer

Claims (13)

A body having a cavity and a stepped structure around the cavity;
A plurality of electrodes disposed in the cavity;
A light emitting chip disposed in the cavity;
A transparent window covering the cavity and having an outer side disposed on the stepped structure;
And an adhesive member disposed between the transparent window and the body,
Wherein the adhesive member comprises a first adhesive member disposed between an outer bottom surface of the transparent window and a bottom of the stepped structure, and a second adhesive member adhered between the outer side of the transparent window and the body. A body having a cavity and a stepped structure around the cavity;
A plurality of electrodes disposed in the cavity;
A light emitting chip disposed in the cavity;
A transparent window covering the cavity and having an outer side disposed on the stepped structure;
And an adhesive member disposed between the outside of the transparent window and the body,
Wherein the step structure comprises a bottom having a lower surface than the top surface of the body and a depth outside of the bottom having a depth less than the bottom,
Wherein the transparent window includes protrusions protruding from the grooves in an outer lower portion thereof,
The bonding member includes a first bonding member disposed in the groove and bonded to the projection of the transparent window, and a second bonding member bonded between the outside of the transparent window and the body. 3. The method according to claim 1 or 2,
And the second adhesive member is bonded to the upper surface of the transparent window and the upper surface of the body. 3. The method according to claim 1 or 2,
Wherein the body includes an inclined structure disposed between the step structure and an upper surface of the body,
Wherein the second adhesive member is adhered to an outer side of the transparent window and an inclined structure of the body. 3. The method according to claim 1 or 2,
And a first recess below the top surface of the transparent window about an outer periphery of the transparent window,
And the second adhesive member is bonded to the first recess and the body. 6. The method of claim 5,
Wherein the body includes a second recess disposed between the step structure and an upper surface of the body,
And the second adhesive member is disposed on the first and second recesses. 3. The method according to claim 1 or 2,
And a waterproof layer disposed on the transparent window and the body. 8. The method of claim 7,
And the waterproof layer is disposed on the second adhesive member. 3. The method according to claim 1 or 2,
Wherein the first and second adhesive members comprise different materials. 3. The method according to claim 1 or 2,
Wherein at least one of the upper surface and the lower surface of the transparent window includes a curved surface. 3. The method according to claim 1 or 2,
And a concavo-convex pattern on an upper surface of the transparent window. 3. The method according to claim 1 or 2,
Wherein the body comprises a ceramic material,
Wherein the transparent window comprises a glass material,
The light emitting chip emits ultraviolet light. 13. The method of claim 12,
First and second lead electrodes disposed on the lower surface of the body;
A first connection electrode disposed in the body and connected to the first electrode and the first lead electrode, and a second connection electrode connected to the first electrode and the second lead electrode.

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