KR20160057963A - Device having a film and manufacturing method thereof - Google Patents

Device having a film and manufacturing method thereof Download PDF

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Publication number
KR20160057963A
KR20160057963A KR1020150112416A KR20150112416A KR20160057963A KR 20160057963 A KR20160057963 A KR 20160057963A KR 1020150112416 A KR1020150112416 A KR 1020150112416A KR 20150112416 A KR20150112416 A KR 20150112416A KR 20160057963 A KR20160057963 A KR 20160057963A
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South Korea
Prior art keywords
film
groove
substrate
silicon substrate
metal film
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KR1020150112416A
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Korean (ko)
Inventor
마사무네 다카노
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가부시끼가이샤 도시바
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Priority claimed from JP2014231875A external-priority patent/JP6325421B2/en
Priority claimed from JP2014231874A external-priority patent/JP2016096265A/en
Priority claimed from JP2015014569A external-priority patent/JP6370720B2/en
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20160057963A publication Critical patent/KR20160057963A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking
    • H01L2924/35121—Peeling or delaminating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Plasma & Fusion (AREA)

Abstract

A method of manufacturing a device of an embodiment is a method of forming a film on a second surface side of a substrate having a first surface and a second surface and partially forming grooves in the substrate so as to leave a film from the first surface side, And the film on the second surface side of the portion where the groove is formed is removed.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a device having a membrane,

The present application is based on Japanese Patent Application No. 2014-231874 filed on November 14, 2014, Japanese Patent Application No. 2014-231875 filed on November 14, 2014, and Japanese Patent Application No. 2015-14569 filed on November 14, January 28, 2015) as the basic application. This application is intended to cover all aspects of the basic application by reference to this basic application.

An embodiment of the present invention relates to a device provided with a film of a metal film, a resin film, or the like, and a manufacturing method thereof.

A plurality of semiconductor elements formed on a semiconductor substrate such as a wafer are divided into a plurality of semiconductor chips by dicing along a dicing region provided on the semiconductor substrate. In the case where a metal film serving as an electrode of a semiconductor element or a resin film such as a die bonding film is formed on one surface of a semiconductor substrate, it is necessary to remove the metal film and the resin film in the dicing region at the time of dicing.

As a method for removing a metal film or a resin film, for example, there is a method of removing a semiconductor substrate and a metal film or a resin film by blade dicing at the same time. In this case, the metal film or the resin film is liable to be deformed such as projections (burrs). If the shape of the metal film or the resin film is abnormal, it is judged that the appearance of the semiconductor chip is defective or the defective bonding between the semiconductor chip and the bed occurs, which causes a problem in that the product yield is lowered.

Japanese Patent Application No. 2014-231874 (filed on November 14, 2014) Japanese Patent Application No. 2014-231875 (filed on November 14, 2014) Japanese Patent Application No. 2015-14569 (filed on January 28, 2015)

Embodiments of the present invention provide a device capable of suppressing a shape abnormality in processing a film and a method of manufacturing the same.

A method of manufacturing a device of an embodiment is a method of forming a film on a side of a second surface of a substrate having a first surface and a second surface, forming a groove partially in the substrate so that the film remains from the first surface side, A material is sprayed from the second surface side to the film, and the film on the second surface side of the portion where the groove is formed is removed.

1 (A), 1 (B), 1 (C), 1 (D), 1 (E), 1 (F) and 1 1 is a schematic sectional view of a device manufacturing method of the first embodiment.
2 is a schematic cross-sectional view of a device manufactured by the device manufacturing method of the first embodiment;
3 (A), 3 (B), 3 (C), 3 (D), 3 (E), 3 (F) and 3 Fig. 7 is a cross-sectional view of a schematic process showing a device manufacturing method of the second embodiment.
4 (A), 4 (B), 4 (C), 4 (D), 4 (E), 4 (F) and 4 FIG. 12 is a cross-sectional view of a schematic process showing a device manufacturing method of a fifth embodiment.
5 (A), 5 (B), 5 (C), 5 (D), 5 (E), 5 (F) and 5 Sectional view showing a schematic process step of the device manufacturing method of the sixth embodiment.
6 (A), 6 (B), 6 (C), 6 (D), 6 (E), 6 (F) and 6 Sectional view of a schematic process view showing the device manufacturing method of the seventh embodiment.
7 (A), 7 (B), 7 (C), 7 (D), 7 (E), 7 (F) and 7 FIG. 12 is a cross-sectional view of a schematic process showing a device manufacturing method of an eighth embodiment.
8 (A), 8 (B), 8 (C), 8 (D), 8 (E), 8 (F) and 8 FIG. 12 is a cross-sectional view of the schematic process showing the device manufacturing method of the ninth embodiment.
9 is a schematic cross-sectional view of a device manufactured by the device manufacturing method of the ninth embodiment.
10 (A), 10 (B), 10 (C), 10 (D), 10 (E), 10 (F) and 10 FIG. 10 is a cross-sectional view of a schematic process showing a device manufacturing method of a tenth embodiment.
11 (A), 11 (B), 11 (C), 11 (D), 11 (E), 11 (F) and 11 FIG. 13 is a cross-sectional view of a schematic process showing a method for manufacturing a device of a thirteenth embodiment.
12 (A), 12 (B), 12 (C), 12 (D), 12 (E), 12 (F) and 12 FIG. 12 is a cross-sectional view of a schematic process showing a method for manufacturing a device of the fourteenth embodiment.
13 (A), 13 (B) and 13 (C) are SEM photographs of Example 1 after dicing.
Figs. 14 (A) and 14 (B) are SEM photographs after dicing of Example 1. Fig.
15 is an optical microscope photograph of Example 1 after dicing.
16 (A), 16 (B) and 16 (C) are SEM photographs of the second embodiment after dicing.
17 is an optical microscope photograph of Example 3 after dicing.
18 (A), 18 (B) and 18 (C) are SEM photographs after dicing of Comparative Example 1. Fig.
19 (A), 19 (B) and 19 (C) are SEM pictures after dicing of Comparative Example 2. Fig.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same or similar members are denoted by the same reference numerals, and a description thereof will be appropriately omitted.

(First Embodiment)

In the device manufacturing method of the present embodiment, a film is formed on the second surface side of the substrate having the first surface and the second surface, a groove is formed in part on the substrate so that the film remains from the first surface side, And the film on the second surface side of the portion where the groove is formed is removed.

Hereinafter, a case where the device to be manufactured is a vertical type power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) using silicon (Si) having metal electrodes on both sides will be described as an example. In this case, the substrate becomes a semiconductor substrate. Further, the film becomes a metal film. The case where the substance to be sprayed onto the metal film is particles containing carbon dioxide will be described as an example. In addition, particles containing carbon dioxide (hereinafter, simply referred to as carbon dioxide particles) are particles composed mainly of carbon dioxide. In addition to carbon dioxide, for example, it may contain inevitable impurities.

1 (A), 1 (B), 1 (C), 1 (D), 1 (E), 1 (F) and 1 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, a base region of a vertical MOSFET (semiconductor element) is formed on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface A gate insulating film, a gate electrode, and a source electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film. It is preferable that the silicon substrate 10 is exposed on the surface of the dicing region provided on the surface side.

Then, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 (Fig. 1 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a metal film 14 is formed on the back side of the silicon substrate 10 (Fig. 1 (B)). The metal film 14 is formed on substantially the entire back surface.

The metal film 14 is a drain electrode of the MOSFET. The metal film 14 is, for example, a heterogeneous metal laminated film. The metal film 14 is, for example, a laminated film of aluminum / titanium / nickel / gold from the back side of the silicon substrate 10. [ The metal film 14 is formed by, for example, a sputtering method. The film thickness of the metal film 14 is, for example, 0.5 m or more and 1.0 m or less.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is bonded to the surface of the metal film 14. Thereafter, the support substrate 12 is peeled off from the silicon substrate 10 (Fig. 1 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 so that the metal film 14 on the back surface side is exposed from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (D) of FIG. Here, the dicing region is a predetermined region having a predetermined width for dividing a plurality of semiconductor elements into a plurality of semiconductor chips by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided on the surface side of the silicon substrate 10, for example, in a lattice shape to partition the semiconductor elements.

The groove 20 is formed by, for example, plasma etching. Plasma etching is a so-called Bosch process in which, for example, an isotropic etching step using an F-based radical, a protective film forming step using a CF 4 -based radical, and anisotropic etching using an F-based ion are repeated.

The grooves 20 are preferably formed by etching the entire surface of the silicon substrate 10 with the protective film on the front surface side as a mask. According to this method, since lithography is not used, the manufacturing process can be simplified and the cost can be reduced.

Then, the resin sheet 22 is attached to the surface side of the silicon substrate 10. [ The resin sheet 22 is a so-called dicing sheet. The resin sheet 22 is fixed to the metal frame 24, for example. The resin sheet 22 is bonded to the surface of the protective film or the metal electrode on the front side. Thereafter, the back side resin sheet 16 is peeled off (FIG. 1 (E)).

Then, carbon dioxide particles are sprayed onto the metal film 14 from the back side of the silicon substrate 10 (Fig. 1 (F)). By spraying the carbon dioxide particles, the metal film 14 on the back surface side of the portion where the groove 20 is formed is removed. The metal film 14 is removed by carving and dropping into the grooves 20 which are physically cavities by the carbon dioxide particles (Fig. 1 (G)).

The carbon dioxide particles are carbon dioxide in a solid state. The carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, a pellet shape, a powder shape, a spherical shape or an irregular shape.

The carbon dioxide particles are produced, for example, by adiabatically expanding liquefied carbon dioxide gas. The generated carbon dioxide particles are injected from the nozzle together with nitrogen gas, for example, and sprayed onto the metal film 14. It is preferable that the average particle diameter of the carbon dioxide particles is 10 占 퐉 or more and 200 占 퐉 or less. The average particle diameter of the carbon dioxide particles can be obtained, for example, by capturing the carbon dioxide particles ejected from the nozzle with a high-speed camera and measuring the particles in the captured image. The particle diameter of one particle is, for example, an average value of a long diameter and a short diameter of a rectangle circumscribing the particles of the image. The particle diameter of the particles is set to be the particle diameter just after ejected from the nozzle.

The spot diameter on the surface of the metal film 14 when the carbon dioxide particles are injected into the metal film 14 is preferably 3 mm or more and 10 mm or less, for example.

When the carbon dioxide particles are sprayed to remove the metal film 14, it is preferable to cover the area of the resin sheet 22 with the mask 26 as shown in Fig. 1 (F). The area of the resin sheet 22 is covered with the mask 26 so that the resin sheet 22 can be prevented from peeling off from the frame 24 due to the impact of the carbon dioxide particles. The mask 26 is, for example, a metal.

Thereafter, the resin sheet 22 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided MOSFETs.

Hereinafter, the operation and effect of the device manufacturing method of the present embodiment will be described.

When the metal film 14 is formed also on the back side of the silicon substrate 10 like the vertical MOSFET, it is necessary to remove the metal film 14 on the back side of the dicing region at the time of dicing. For example, when the semiconductor substrate 10 and the metal film 14 are simultaneously removed from the surface side by blade dicing, the metal film 14 at the end of the groove 20 in the dicing region is curled up to the back side , So-called burrs occur.

If burrs of the metal film 14 are formed, for example, the semiconductor chip may fail to be visually inspected and may not be commercialized. Further, when the semiconductor chip and the metal bed are joined together by a bonding material such as solder, for example, adhesion at the burr portion is deteriorated, and there is a fear that bonding failure occurs.

The grooves 20 are formed along the dicing region of the silicon substrate 10 and then the carbon dioxide particles are sprayed from the back surface of the metal film 14 and the metal The membrane 14 is removed. Since the removed metal film 14 is shaved in the cavity 20, the burr is suppressed. It is possible to remove only the metal film 14 of the groove 20 in a self-aligning manner.

It is considered that the removal of the metal film 14 in the portion over the groove 20 is mainly caused by the physical impact of the carbon dioxide particles. In addition, since the metal film 14 is quenched by the low temperature carbon dioxide particles and the force of vaporization and expansion of the carbon dioxide impinging on the metal film 14 is applied, the effect of removing the metal film 14 by the physical impact As shown in Fig.

In addition, when the groove 20 of the silicon substrate 10 is formed by blade dicing, the silicon substrate 10 at the back side of the groove 20 may be chipped (chipped). In this embodiment, since the grooves 20 are formed by plasma etching, it is possible to prevent the silicon substrate 10 at the end portion on the back side of the groove 20 from being cut out.

In addition, when the groove 20 of the silicon substrate 10 is formed by blade dicing, a width at least equal to the thickness of the blade is required in the dicing region. For this reason, for example, a dicing region width of 50 mu m or more is required.

In this embodiment, since the groove 20 is formed by plasma etching, the width of the dicing region can be narrowed. For example, the width of the dicing region can be set to, for example, 10 占 퐉 or more and less than 50 占 퐉, and furthermore, 20 占 퐉 or less.

In addition, in the present embodiment, a metal film or the like is removed by physical impact mainly by carbon dioxide particles. Therefore, unlike the case of dry etching, for example, even if the metal film is a laminated film of dissimilar metals, it is possible to remove it without depending on the difference in chemical properties of each film. Therefore, even in the case of different metal laminated films, it is possible to suppress the shape abnormality and remove it easily.

A device manufactured by the manufacturing method according to the present embodiment is a device in which a laminated structure of a substrate and a metal film formed on one surface of a substrate is cut to form a piece and the inclination angle with respect to the end face of the metal film is Lt; / RTI > A device manufactured by the manufacturing method of the present embodiment is a device in which a laminated structure of a substrate and a metal film formed on one surface of a substrate is cut to form a piece and the irregularity of the cut surface of the metal film is smaller than the irregularity of the cut surface of the substrate small.

2 is a schematic cross-sectional view of a device manufactured by the manufacturing method of the present embodiment. Sectional shape in the vicinity of the groove 20. The inclination angle? 1 with respect to the end surface (second surface) of the metal film 14 on the groove 20 side is smaller than the inclination angle? 1 with respect to the side surface (second surface) of the groove 20 2).

The end of the metal film 14 is located on the opposite side of the groove from the boundary silicon end of the silicon substrate 10 and the metal film 14. [ The end of the metal film 14 is inclined in the direction away from the groove toward the surface of the metal film 14 from the boundary between the silicon substrate 10 and the metal film 14. [ The inclination becomes gentler toward the surface of the metal film 14. [ The angle of the upper surface side of the end portion of the metal film 14 is a curved surface. When the end of the metal film 14 has the shape shown in Fig. 2, the junction characteristics when the MOSFET is bonded to a bed or the like is improved.

Particularly when the groove 20 is formed by plasma etching as in the present embodiment, irregularities in the cut surface (the end on the groove 20 side of the metal film 14) of the metal film 14 (The side surface of the groove 20) of the silicon substrate 10 becomes smaller. In other words, the surface roughness of the end of the metal film 14 on the groove 20 side is smaller than the surface roughness of the side surface of the groove 20.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Second Embodiment)

The device manufacturing method of the present embodiment is different from the first embodiment in that a semiconductor device having a resin film instead of a metal film is formed on the back side of the silicon substrate 10. [ Hereinafter, the description of the contents overlapping with those of the first embodiment will be omitted.

Hereinafter, the case where the device to be manufactured is a semiconductor memory using silicon (Si) having a resin film on the back side will be described as an example.

3 (A), 3 (B), 3 (C), 3 (D), 3 (E), 3 (F) and 3 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface (hereinafter also referred to as a back surface) , A power electrode, a ground electrode, and an I / O electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film.

Then, the support substrate 12 is bonded to the front surface side of the silicon substrate 10 (Fig. 3A). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a resin film 30 is formed on the back surface side of the silicon substrate 10 (Fig. 3 (B)). The resin film 30 is formed on substantially the entire back surface.

The resin film 30 is, for example, DAF (Die Attach Film) for bonding the divided semiconductor chips to the substrate. The film thickness of the resin film 30 is, for example, 10 占 퐉 or more and 200 占 퐉 or less.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is adhered to the surface of the resin film 30. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 3 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 so that the resin film 30 on the back surface side is exposed from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (D) of FIG. Here, the dicing region is a predetermined region having a predetermined width for dividing the semiconductor chip by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided in a lattice shape on the surface side of the silicon substrate 10, for example.

The grooves 20 are formed, for example, by blade dicing.

Then, the resin sheet 22 is attached to the surface side of the silicon substrate 10. [ The resin sheet 22 is a so-called dicing sheet. The resin sheet 22 is fixed to the metal frame 24, for example. The resin sheet 22 is bonded to the surface of the protective film or the metal electrode on the front side. Thereafter, the resin sheet 16 on the back side is peeled off (Fig. 3 (E)).

Then, carbon dioxide particles are sprayed onto the resin film 30 from the back side of the silicon substrate 10 (FIG. 3 (F)). By spraying the carbon dioxide particles, the resin film 30 on the back surface side of the portion where the groove 20 is formed is removed. The resin film 30 is removed by dropping the resin film 30 into the groove 20 physically by the carbon dioxide particles (Fig. 3 (G)).

The carbon dioxide particles are carbon dioxide in a solid state. The carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, a pellet shape, a powder shape, a spherical shape or an irregular shape.

The carbon dioxide particles are injected from the nozzle together with nitrogen gas, for example, and sprayed onto the resin film 30. It is preferable that the average particle diameter of the carbon dioxide particles is 10 占 퐉 or more and 200 占 퐉 or less. The average particle diameter of the carbon dioxide particles can be obtained, for example, by capturing the carbon dioxide particles ejected from the nozzle with a high-speed camera and measuring the particles in the captured image.

It is preferable that the spot diameter on the surface of the resin film 30 when the carbon dioxide particles are injected onto the resin film 30 is, for example, 3 mm or more and 10 mm or less.

When the carbon dioxide particles are sprayed and the resin film 30 is removed, it is preferable to cover the area of the resin sheet 22 with the mask 26 as shown in Fig. 3 (F). The area of the resin sheet 22 is covered with the mask 26 so that the resin sheet 22 can be prevented from peeling off from the frame 24 due to the impact of the carbon dioxide particles. The mask 26 is, for example, a metal.

Thereafter, the resin sheet 22 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided semiconductor memories.

Hereinafter, the operation and effect of the device manufacturing method of the present embodiment will be described.

For example, in a semiconductor device used in a small electronic apparatus represented by a cellular phone, such as a semiconductor memory, a BGA (Ball Grid Array) or an MCP (Multi Chip Package), which is a small and thin semiconductor package, is used. In the BGA or MCP, a film-shaped die bonding material such as DAF is used instead of the die-bonding material in paste state.

When the resin film 30 such as DAF is formed on the back side of the silicon substrate 10, it is necessary to remove the resin film 30 on the back side of the dicing region at the time of dicing. For example, when the semiconductor substrate 10 and the resin film 30 are simultaneously removed from the surface side by blade dicing, the resin film 30 is peeled off from the end of the groove 20 in the dicing region, There is a problem that the cut surface of the film 30 does not become a straight line but becomes irregular.

The grooves 20 are formed along the dicing regions of the silicon substrate 10 and then the carbon dioxide particles are sprayed onto the resin film 30 from the back side and the resin The membrane 30 is removed. Since the removed resin film 30 is shaved in the cavity 20, peeling of the resin film 30 is suppressed. Further, the cut surface of the resin film 30 becomes linear.

It is considered that the removal of the resin film 30 in the portion extending over the groove 20 is mainly caused by the physical impact of the carbon dioxide particles. In addition, since the resin film 30 is quenched by the low temperature carbon dioxide particles and the force of vaporization and expansion of the carbon dioxide impinging on the resin film 30 is applied, the removal effect of the resin film 30 by the physical impact As shown in Fig.

A device manufactured by the manufacturing method of the present embodiment is a device in which a substrate and a laminated structure of a resin film formed on one side of the substrate are cut to form a piece and the inclination angle with respect to the end face of the resin film is Lt; / RTI > A device manufactured by the manufacturing method of the present embodiment is a device in which a laminated structure of a resin film formed on one side of a substrate is cut and separated into a plurality of laminated structures in which a concave- small.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a resin film.

(Third Embodiment)

The device manufacturing method of this embodiment is the same as the first embodiment except that pressurized water is used instead of carbon dioxide particles. Hereinafter, the description of the contents overlapping with those of the first embodiment will be omitted.

In this embodiment, the pressurized water is sprayed from the back surface side of the silicon substrate 10 to the metal film 14. [ The metal film 14 on the back surface side of the groove 20 is removed by spraying pressurized water. The metal film 14 is removed by scooping off the metal film 14 into the groove 20 physically by the pressurized water.

As described above, according to the present embodiment, it is also possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Fourth Embodiment)

The device manufacturing method of the present embodiment is the same as the first embodiment except that pressurized water containing abrasive grains is used in place of carbon dioxide particles. Hereinafter, the description of the contents overlapping with those of the first embodiment will be omitted.

In this embodiment, the pressurized water containing abrasive grains is sprayed from the back side of the silicon substrate 10 to the metal film 14. [ The metal film 14 on the back side of the groove 20 is removed by spraying pressurized water containing abrasive grains. The metal film 14 is removed by scooping the groove 20, which is physically in the cavity, with pressurized water containing abrasive grains. This processing is so-called abrasive jet processing.

 The abrasive grains are, for example, alumina particles, silicon carbide particles, silica particles and the like.

 As described above, according to the present embodiment, it is also possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Fifth Embodiment)

The device manufacturing method of the present embodiment is different from the first embodiment in that a part of the substrate remains when the groove is partially formed in the substrate. Hereinafter, the description of the contents overlapping with those of the first embodiment will be omitted.

4 (A), 4 (B), 4 (C), 4 (D), 4 (E), 4 (F) and 4 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, a base region of a vertical MOSFET (semiconductor element) is formed on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface A gate insulating film, a gate electrode, and a source electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film. It is preferable that the silicon substrate 10 is exposed on the surface of the dicing region provided on the surface side.

Then, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 (Fig. 4 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a metal film 14 is formed on the back side of the silicon substrate 10 (Fig. 4 (B)). The metal film 14 is formed on substantially the entire back surface.

The metal film 14 is a drain electrode of the MOSFET. The metal film 14 is, for example, a heterogeneous metal laminated film. The metal film 14 is, for example, a laminated film of aluminum / titanium / nickel / gold from the back side of the silicon substrate 10. [ The metal film 14 is formed by, for example, a sputtering method. The film thickness of the metal film 14 is, for example, 0.5 m or more and 1.0 m or less.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is bonded to the surface of the metal film 14. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 4 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (Fig. 4 (D)). When the grooves 20 are formed, the grooves 20 are formed so that the silicon substrate 10 on the back side is partially left. The semiconductor substrate on the back side of the groove 20 is left to be 20 mu m or less, more preferably 10 mu m or less.

Here, the dicing region is a predetermined region having a predetermined width for dividing a plurality of semiconductor elements into a plurality of semiconductor chips by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided on the surface side of the silicon substrate 10, for example, in a lattice shape to partition the semiconductor elements.

The grooves 20 are formed, for example, by blade dicing. The groove 20 may be formed by, for example, plasma etching.

Then, the resin sheet 22 is attached to the surface side of the silicon substrate 10. [ The resin sheet 22 is a so-called dicing sheet. The resin sheet 22 is fixed to the metal frame 24, for example. The resin sheet 22 is bonded to the surface of the protective film or the metal electrode on the front side. Thereafter, the resin sheet 16 on the back side is peeled off (Fig. 4 (E)).

Then, carbon dioxide particles are sprayed onto the metal film 14 from the back side of the silicon substrate 10 (Fig. 4 (F)). The metal film 14 and the silicon substrate 10 on the rear surface side of the portion where the groove 20 is formed are removed by injecting the carbon dioxide particles. The metal film 14 and the silicon substrate 10 are removed by scooping down into the grooves 20 which are physically cavities by the carbon dioxide particles (Fig. 4 (G)).

It is preferable to cover the area of the resin sheet 22 with the mask 26 as shown in Fig. 4 (F) when the carbon dioxide particles are sprayed to remove the metal film 14 and the silicon substrate 10 Do. The area of the resin sheet 22 is covered with the mask 26 so that the resin sheet 22 can be prevented from peeling off from the frame 24 due to the impact of the carbon dioxide particles. The mask 26 is, for example, a metal.

Thereafter, the resin sheet 22 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided MOSFETs.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Sixth Embodiment)

The device manufacturing method of the present embodiment is different from the second embodiment in that a part of the substrate remains when the groove is partially formed in the substrate. Hereinafter, the description of the contents overlapping with those of the second embodiment will be omitted.

5 (A), 5 (B), 5 (C), 5 (D), 5 (E), 5 (F) and 5 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface (hereinafter also referred to as a back surface) , A power electrode, a ground electrode, and an I / O electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film.

Then, the support substrate 12 is bonded to the front surface side of the silicon substrate 10 (Fig. 5 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a resin film 30 is formed on the back side of the silicon substrate 10 (Fig. 5 (B)). The resin film 30 is formed on substantially the entire back surface.

The resin film 30 is, for example, DAF (Die Attach Film) for bonding the divided semiconductor chips to the substrate. The film thickness of the resin film 30 is, for example, 10 占 퐉 or more and 200 占 퐉 or less.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is adhered to the surface of the resin film 30. Thereafter, the support substrate 12 is peeled off from the silicon substrate 10 (Fig. 5 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (Fig. 5 (D)). When the grooves 20 are formed, the grooves 20 are formed so that the silicon substrate 10 on the back side is partially left. The semiconductor substrate on the back side of the groove 20 is left to be 20 mu m or less, more preferably 10 mu m or less.

Here, the dicing region is a predetermined region having a predetermined width for dividing the semiconductor chip by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided in a lattice shape on the surface side of the silicon substrate 10, for example.

The grooves 20 are formed, for example, by blade dicing. The groove 20 may be formed by, for example, plasma etching.

Then, the resin sheet 22 is attached to the surface side of the silicon substrate 10. [ The resin sheet 22 is a so-called dicing sheet. The resin sheet 22 is fixed to the metal frame 24, for example. The resin sheet 22 is bonded to the surface of the protective film or the metal electrode on the front side. Thereafter, the resin sheet 16 on the back surface side is peeled off (FIG. 5 (E)).

Then, carbon dioxide particles are sprayed onto the resin film 30 from the back side of the silicon substrate 10 (Fig. 5 (F)). By spraying the carbon dioxide particles, the resin film 30 and the silicon substrate 10 on the back surface side of the portion where the groove 20 is formed are removed. The resin film 30 is removed by dropping the resin film 30 into the groove 20 physically by the carbon dioxide particles (Fig. 5 (G)).

When the carbon dioxide particles are sprayed to remove the resin film 30, it is preferable to cover the area of the resin sheet 22 with the mask 26 as shown in Fig. 5 (F). The area of the resin sheet 22 is covered with the mask 26 so that the resin sheet 22 can be prevented from peeling off from the frame 24 due to the impact of the carbon dioxide particles. The mask 26 is, for example, a metal.

Thereafter, the resin sheet 22 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided semiconductor memories.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a resin film.

(Seventh Embodiment)

The device manufacturing method of the present embodiment is different from the first embodiment in that a part of the film is removed when a groove is partially formed in the substrate. Hereinafter, the description of the contents overlapping with those of the first embodiment will be omitted.

6 (A), 6 (B), 6 (C), 6 (D), 6 (E), 6 (F) and 6 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, a base region of a vertical MOSFET (semiconductor element) is formed on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface A gate insulating film, a gate electrode, and a source electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film. It is preferable that the silicon substrate 10 is exposed on the surface of the dicing region provided on the surface side.

Then, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 (Fig. 6 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a metal film 14 is formed on the back side of the silicon substrate 10 (Fig. 6 (B)). The metal film 14 is formed on substantially the entire back surface.

The metal film 14 is a drain electrode of the MOSFET. The metal film 14 is, for example, a heterogeneous metal laminated film. The metal film 14 is, for example, a laminated film of aluminum / titanium / nickel / gold from the back side of the silicon substrate 10. [ The metal film 14 is formed by, for example, a sputtering method. The film thickness of the metal film 14 is, for example, 0.5 m or more and 1.0 m or less.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is bonded to the surface of the metal film 14. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 6 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (Fig. 6 (D)). When the groove 20 is formed, the groove 20 is formed to remove a part of the metal film 14 on the back side.

Here, the dicing region is a predetermined region having a predetermined width for dividing a plurality of semiconductor elements into a plurality of semiconductor chips by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided on the surface side of the silicon substrate 10, for example, in a lattice shape to partition the semiconductor elements.

The grooves 20 are formed, for example, by blade dicing. The groove 20 may be formed by, for example, plasma etching.

Then, the resin sheet 22 is attached to the surface side of the silicon substrate 10. [ The resin sheet 22 is a so-called dicing sheet. The resin sheet 22 is fixed to the metal frame 24, for example. The resin sheet 22 is bonded to the surface of the protective film or the metal electrode on the front side. Thereafter, the resin sheet 16 on the back side is peeled off (Fig. 6 (E)).

Then, carbon dioxide particles are sprayed onto the metal film 14 from the back side of the silicon substrate 10 (Fig. 6 (F)). By spraying the carbon dioxide particles, the metal film 14 on the back surface side of the portion where the groove 20 is formed is removed. The metal film 14 is removed by dropping the metal film 14 physically into the groove 20 by the carbon dioxide particles (Fig. 6 (G)).

When the carbon dioxide particles are sprayed and the metal film 14 is removed, it is preferable to cover the area of the resin sheet 22 with the mask 26 as shown in Fig. 6 (F). The area of the resin sheet 22 is covered with the mask 26 so that the resin sheet 22 can be prevented from peeling off from the frame 24 due to the impact of the carbon dioxide particles. The mask 26 is, for example, a metal.

Thereafter, the resin sheet 22 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided MOSFETs.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Eighth embodiment)

The device manufacturing method of the present embodiment is different from the second embodiment in that a part of the film is removed when the groove is partially formed in the substrate and when the groove is partially formed in the substrate. Hereinafter, the description of the contents overlapping with those of the second embodiment will be omitted.

7 (A), 7 (B), 7 (C), 7 (D), 7 (E), 7 (F) and 7 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface (hereinafter also referred to as a back surface) , A power electrode, a ground electrode, and an I / O electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film.

Then, the supporting substrate 12 is bonded to the front surface side of the silicon substrate 10 (Fig. 7 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a resin film 30 is formed on the back surface side of the silicon substrate 10 (Fig. 7 (B)). The resin film 30 is formed on substantially the entire back surface.

The resin film 30 is, for example, DAF (Die Attach Film) for bonding the divided semiconductor chips to the substrate. The film thickness of the resin film 30 is, for example, 10 占 퐉 or more and 200 占 퐉 or less.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is adhered to the surface of the resin film 30. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 7 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (Fig. 7 (D)). When the groove 20 is formed, the groove 20 is formed to remove a part of the metal film 14 on the back side.

Here, the dicing region is a predetermined region having a predetermined width for dividing the semiconductor chip by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided in a lattice shape on the surface side of the silicon substrate 10, for example.

The grooves 20 are formed, for example, by blade dicing. The groove 20 may be formed by, for example, plasma etching.

Then, the resin sheet 22 is attached to the surface side of the silicon substrate 10. [ The resin sheet 22 is a so-called dicing sheet. The resin sheet 22 is fixed to the metal frame 24, for example. The resin sheet 22 is bonded to the surface of the protective film or the metal electrode on the front side. Thereafter, the resin sheet 16 on the back side is peeled off (Fig. 7 (E)).

Then, carbon dioxide particles are sprayed onto the resin film 30 from the backside of the silicon substrate 10 (Fig. 7 (F)). By spraying the carbon dioxide particles, the resin film 30 on the back surface side of the portion where the groove 20 is formed is removed. The resin film 30 is removed by dropping the resin film 30 into the cavity 20 physically by the carbon dioxide particles (Fig. 7 (G)).

It is preferable to cover the area of the resin sheet 22 with the mask 26 as shown in Fig. 7 (F) when the resin film 30 is removed by spraying the carbon dioxide particles. The area of the resin sheet 22 is covered with the mask 26 so that the resin sheet 22 can be prevented from peeling off from the frame 24 due to the impact of the carbon dioxide particles. The mask 26 is, for example, a metal.

Thereafter, the resin sheet 22 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided semiconductor memories.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a resin film.

In the first embodiment, the groove is formed by plasma etching as an example. However, it is also possible to form the groove by blade dicing or laser dicing. In the second embodiment, the groove is formed by blade dicing as an example, but it is also possible to form the groove by plasma etching or laser dicing.

In the first to eighth embodiments, the grooves are formed so as to expose the metal film or the resin film. However, it is also possible to form grooves to leave a part of the substrate. In this case, by ejecting the material to the metal film or the resin film, the substrate of the remaining groove portion is also removed at the same time.

(Ninth embodiment)

The device manufacturing method of the present embodiment is a device manufacturing method in which a substrate having a first surface and a second surface is partially formed with grooves from the first surface side and the substrate on the second surface side of the portion where the grooves are formed remains, A film is formed on the second surface side and a substance is sprayed onto the film from the second surface side and the film on the second surface side of the groove formed portion and the second surface side Is removed so that the groove is exposed.

Hereinafter, a case where the device to be manufactured is a vertical type power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) using silicon (Si) having metal electrodes on both sides will be described as an example. In this case, the substrate becomes a semiconductor substrate. Further, the film becomes a metal film. The case where the substance to be sprayed onto the metal film is particles containing carbon dioxide will be described as an example. Further, particles containing carbon dioxide (hereinafter, simply referred to as carbon dioxide particles) are particles containing carbon dioxide as a main component. In addition to carbon dioxide, for example, it may contain inevitable impurities.

8 (A), 8 (B), 8 (C), 8 (D), 8 (E), 8 (F) and 8 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, a base region of a vertical MOSFET (semiconductor element) is formed on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface A gate insulating film, a gate electrode, and a source electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film. It is preferable that the silicon substrate 10 is exposed on the surface of the dicing region provided on the surface side.

Subsequently, grooves 20 are partially formed in the silicon substrate 10 from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (Fig. 8 (A)). Here, the dicing region is a predetermined region having a predetermined width for dividing a plurality of semiconductor elements into a plurality of semiconductor chips by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided on the surface side of the silicon substrate 10, for example, in a lattice shape to partition the semiconductor elements.

The groove 20 is formed by, for example, plasma etching. Plasma etching is a so-called Bosch process in which, for example, an isotropic etching step using an F-based radical, a protective film forming step using a CF 4 radical, and anisotropic etching using a F-based ion are repeated.

The grooves 20 are preferably formed by etching the entire surface of the silicon substrate 10 with the protective film on the front surface side as a mask. According to this method, since lithography is not used, the manufacturing process can be simplified and the cost can be reduced.

The formation of the groove 20 is a so-called DBG (Dicing Before Grinding) process in which grooves are formed in the dicing region from the front side before grinding the back surface. The depth of the groove 20 is set so as to be shallower than a grinding scheduled position (dotted lines in Figs. 8A and 8B) at the time of back grinding. In other words, the depth of the groove 20 is set so that the semiconductor substrate 10 remains on the back surface of the groove 20 after the back side grinding.

Subsequently, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 using an adhesive layer (not shown) (Fig. 8B). The supporting substrate 12 is, for example, quartz glass.

Subsequently, the back surface side of the silicon substrate 10 is removed by grinding, and the silicon substrate 10 is thinned (Fig. 8 (C)). At this time, the semiconductor substrate 10 on the rear surface side of the portion where the groove 20 is formed remains. The semiconductor substrate on the back side of the groove 20 is left to be 20 mu m or less, more preferably 10 mu m or less.

Thereafter, the metal film 14 is formed on the back side of the silicon substrate 10 (Fig. 8 (D)). The metal film 14 is formed on substantially the entire back surface. At this time, since the silicon substrate 10 is present on the back side of the groove 20, the metal film 14 is not formed in the groove 20.

The metal film 14 is a drain electrode of the MOSFET. The metal film 14 is, for example, a heterogeneous metal laminated film. The metal film 14 is, for example, a laminated film of aluminum / titanium / nickel / gold from the back side of the silicon substrate 10. [ The metal film 14 is formed by, for example, a sputtering method. The film thickness of the metal film 14 is, for example, 0.5 m or more and 1.0 m or less.

Then, carbon dioxide particles are sprayed onto the metal film 14 from the backside of the silicon substrate 10 (Fig. 8 (E)). The silicon substrate 10 on the back surface side of the portion where the metal film 14 and the groove 20 are formed on the back surface side of the groove 20 is removed by exposing the groove 20 to the carbon dioxide particles. The metal film 14 and the silicon substrate 10 are removed by scooping down into the grooves 20 which are physically cavities by the carbon dioxide particles (Fig. 8 (F)).

The carbon dioxide particles are carbon dioxide in a solid state. The carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, a pellet shape, a powder shape, a spherical shape or an irregular shape.

The carbon dioxide particles are produced, for example, by adiabatically expanding liquefied carbon dioxide gas. The generated carbon dioxide particles are injected from the nozzle together with, for example, nitrogen gas, and sprayed onto the metal film 14. [ It is preferable that the average particle diameter of the carbon dioxide particles is 10 占 퐉 or more and 200 占 퐉 or less. The average particle diameter of the carbon dioxide particles can be obtained, for example, by capturing the carbon dioxide particles ejected from the nozzle with a high-speed camera and measuring the particles in the captured image.

The spot diameter on the surface of the metal film 14 when the carbon dioxide particles are injected into the metal film 14 is preferably 3 mm or more and 10 mm or less, for example.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is bonded to the surface of the metal film 14. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 8 (G)).

Thereafter, the resin sheet 16 on the front surface side of the silicon substrate 10 is peeled off to obtain a plurality of divided MOSFETs.

Hereinafter, the operation and effect of the device manufacturing method of the present embodiment will be described.

When the metal film 14 is formed also on the back side of the silicon substrate 10 like the vertical MOSFET, it is necessary to remove the metal film 14 on the back side of the dicing region at the time of dicing. For example, when the semiconductor substrate 10 and the metal film 14 are simultaneously removed from the surface side by blade dicing, the end metal film 14 of the groove 20 of the dicing region is rolled up to the back side , So-called burrs occur.

If burrs of the metal film 14 are formed, for example, the semiconductor chip may fail to be visually inspected and may not be commercialized. In addition, when the semiconductor chip and the metal bed are bonded by a bonding material such as solder, adhesion at the burr portion is deteriorated, which may cause bonding failure.

The grooves 20 are formed along the dicing region of the silicon substrate 10 and then the carbon dioxide particles are sprayed from the back surface of the metal film 14 and the metal The film 14 and the silicon substrate 10 are removed. Since the removed metal film 14 and the silicon substrate 10 are shrunk in the cavity 20, the occurrence of burrs is suppressed. It is possible to remove only the metal film 14 of the groove 20 and the silicon substrate 10 in a self-aligning manner.

It is considered that the removal of the metal film 14 and the silicon substrate 10 in the portion over the groove 20 is mainly caused by the physical impact of the carbon dioxide particles. In addition, since the metal film 14 and the silicon substrate 10 are quenched by the low temperature carbon dioxide particles and the carbon dioxide which has collided with the metal film 14 and the silicon substrate 10 is vaporized and expanded, It is considered that the effect of removing the metal film 14 and the silicon substrate 10 due to physical impact is promoted.

In addition, when the groove 20 of the silicon substrate 10 is formed by blade dicing, a width at least equal to the thickness of the blade is required in the dicing region. For this reason, for example, a dicing region width of 50 mu m or more is required.

In this embodiment, since the groove 20 is formed by plasma etching, the width of the dicing region can be narrowed. For example, the width of the dicing region can be set to, for example, 10 占 퐉 or more and less than 50 占 퐉, and furthermore, 20 占 퐉 or less.

In addition, in the present embodiment, a metal film or the like is removed by physical impact mainly by carbon dioxide particles. Therefore, unlike the case of dry etching, for example, even if the metal film is a different metal laminated film, it is possible to remove it without depending on the difference in chemical properties of each film. Therefore, even in the case of different metal laminated films, it is possible to suppress the shape abnormality and remove it easily.

9 is a schematic cross-sectional view of a device manufactured by the manufacturing method of the present embodiment. Sectional shape in the vicinity of the groove 20. The inclination angle? 1 with respect to the end surface (second surface) of the metal film 14 on the groove 20 side is smaller than the inclination angle? 1 with respect to the side surface (second surface) of the groove 20 2).

The end of the metal film 14 is located on the opposite side of the groove from the boundary silicon end of the silicon substrate 10 and the metal film 14. [ The end of the metal film 14 is inclined in the direction away from the groove toward the surface of the metal film 14 from the boundary between the silicon substrate 10 and the metal film 14. [ The inclination becomes gentler toward the surface of the metal film 14. [ The angle of the upper surface side of the end portion of the metal film 14 is a curved surface. Since the end of the metal film 14 has the shape shown in Fig. 9, the junction characteristics when the MOSFET is bonded to a bed or the like is improved.

Particularly, when the groove 20 is formed by plasma etching, as in the present embodiment, the edge irregularity of the metal film 14 on the groove 20 side becomes the groove 20 of the silicon substrate 10, Is smaller than that of the side irregularities. In other words, the surface roughness of the end of the metal film 14 on the groove 20 side is made smaller than the surface roughness of the side surface of the groove 20.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Tenth Embodiment)

The device manufacturing method of the present embodiment is different from the ninth embodiment in that a semiconductor device having a resin film instead of a metal film is formed on the back side of the silicon substrate 10. [ Hereinafter, the description of the contents overlapping with the ninth embodiment will be omitted.

Hereinafter, the case where the device to be manufactured is a semiconductor memory using silicon (Si) having a resin film on the back side will be described as an example.

10 (A), 10 (B), 10 (C), 10 (D), 10 (E), 10 (F) and 10 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface (hereinafter also referred to as a back surface) , A power electrode, a ground electrode, and an I / O electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film.

Subsequently, grooves 20 are partially formed in the silicon substrate 10 from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (Fig. 10 (A)). Here, the dicing region is a predetermined region having a predetermined width for dividing a plurality of semiconductor elements into a plurality of semiconductor chips by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided on the surface side of the silicon substrate 10, for example, in a lattice shape to partition the semiconductor elements.

The grooves 20 are formed, for example, by blade dicing.

The formation of the groove 20 is a so-called DBG (Dicing Before Grinding) process in which grooves are formed in the dicing region from the front side before grinding the back surface. The depth of the groove 20 is set so as to be shallower than a grinding scheduled position (dotted line in FIG. 10 (A) and FIG. 10 (B)) at the back grinding time. In other words, the depth of the groove 20 is set so that the semiconductor substrate 10 remains on the back surface of the groove 20 after the back side grinding.

Then, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 using an adhesive layer (not shown) (FIG. 10 (B)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin (FIG. 10 (C)). At this time, the semiconductor substrate 10 on the rear surface side of the portion where the groove 20 is formed remains. The semiconductor substrate on the back side of the groove 20 is left to be 20 mu m or less, more preferably 10 mu m or less.

Thereafter, a resin film 30 is formed on the back surface side of the silicon substrate 10 (Fig. 10 (D)). The resin film 30 is formed on substantially the entire back surface.

The resin film 30 is, for example, DAF (Die Attach Film) for bonding the divided semiconductor chips to the substrate. The film thickness of the resin film 30 is, for example, 10 占 퐉 or more and 200 占 퐉 or less.

Then, carbon dioxide particles are sprayed onto the resin film 30 from the back side of the silicon substrate 10 (Fig. 10 (E)). The resin film 30 on the back surface side of the portion where the groove 20 is formed and the silicon substrate 10 on the back surface side of the portion where the groove 20 is formed are removed so that the groove 20 is exposed by injecting the carbon dioxide particles . The resin film 30 and the silicon substrate 10 are removed by scooping down into the grooves 20 which are physically cavities by the carbon dioxide particles (Fig. 10 (F)).

The carbon dioxide particles are carbon dioxide in a solid state. The carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, a pellet shape, a powder shape, a spherical shape or an irregular shape.

The carbon dioxide particles are produced, for example, by adiabatically expanding liquefied carbon dioxide gas. The generated carbon dioxide particles are injected from the nozzle together with, for example, nitrogen gas, and sprayed onto the metal film 14. [ It is preferable that the average particle diameter of the carbon dioxide particles is 10 占 퐉 or more and 200 占 퐉 or less.

The average particle diameter of the carbon dioxide particles can be obtained, for example, by capturing the carbon dioxide particles ejected from the nozzle with a high-speed camera and measuring the particles in the captured image.

The spot diameter on the surface of the metal film 14 when the carbon dioxide particles are injected into the metal film 14 is preferably 3 mm or more and 10 mm or less, for example.

Then, a resin sheet 16 is attached to the back surface side of the silicon substrate 10. The resin sheet 16 is a so-called dicing sheet. The resin sheet 16 is fixed to the metal frame 18, for example. The resin sheet 16 is adhered to the surface of the resin film 30. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 10 (G)).

Thereafter, the resin sheet 16 is peeled off to obtain a plurality of divided semiconductor memories.

Hereinafter, the operation and effect of the device manufacturing method of the present embodiment will be described.

For example, in a semiconductor device used in a small electronic apparatus represented by a cellular phone, such as a semiconductor memory, a BGA (Ball Grid Array) or an MCP (Multi Chip Package), which is a small and thin semiconductor package, is used. In the BGA or MCP, a film-shaped die bonding material such as DAF is used instead of the die-bonding material in paste state.

When the resin film 30 such as DAF is formed on the back side of the silicon substrate 10, it is necessary to remove the resin film 30 on the back side of the dicing region at the time of dicing. For example, when the semiconductor substrate 10 and the resin film 30 are simultaneously removed from the surface side by blade dicing, the resin film 30 is peeled off from the end of the groove 20 in the dicing region, There is a problem that the cut surface of the film 30 does not become a straight line but becomes irregular.

The grooves 20 are formed along the dicing regions of the silicon substrate 10 and then the carbon dioxide particles are sprayed onto the resin film 30 from the back side and the resin The film 30 and the silicon substrate 10 are removed. Since the removed resin film 30 and the silicon substrate 10 are shrunk in the cavity 20, the peeling of the resin film 30 is suppressed. Further, the cut surface of the resin film 30 becomes linear.

It is considered that the removal of the resin film 30 and the silicon substrate 10 in the portion over the groove 20 is mainly caused by the physical impact of the carbon dioxide particles. In addition, since the resin film 30 and the silicon substrate 10 are quenched by the low temperature carbon dioxide particles and the force of the carbon dioxide which collides with the resin film 30 and the silicon substrate 10 is vaporized and expanded, It is considered that the effect of removing the resin film 30 and the silicon substrate 10 due to physical impact is promoted.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a resin film.

(Eleventh Embodiment)

The device manufacturing method of the present embodiment is the same as the ninth embodiment except that pressurized water (water jet) is used instead of carbon dioxide particles. Hereinafter, the description of the contents overlapping with the ninth embodiment will be omitted.

In this embodiment, the pressurized water is sprayed from the back surface side of the silicon substrate 10 to the metal film 14. [ The metal film 14 on the back side of the groove 20 and the silicon substrate 10 are removed by spraying pressurized water. The metal film 14 is removed by scooping off the metal film 14 into the groove 20 physically by the pressurized water. This processing is so-called water jet processing.

As described above, according to the present embodiment, it is also possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Twelfth Embodiment)

The device manufacturing method of the present embodiment is the same as the ninth embodiment except that pressurized water containing abrasive grains is used in place of carbon dioxide particles. Hereinafter, the description of the contents overlapping with the ninth embodiment will be omitted.

In this embodiment, the pressurized water containing abrasive grains is sprayed from the back side of the silicon substrate 10 to the metal film 14. [ The metal film 14 on the back surface side of the groove 20 and the silicon substrate 10 are removed by spraying pressurized water containing abrasive grains. The metal film 14 is removed by scooping the groove 20, which is physically in the cavity, with pressurized water containing abrasive grains. This processing is so-called abrasive jet processing.

The abrasive grains are, for example, alumina particles, silicon carbide particles, silica particles and the like.

As described above, according to the present embodiment, it is also possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

In the ninth embodiment, the groove is formed by plasma etching as an example, but it is also possible to form the groove by blade dicing or laser dicing. In the tenth embodiment, the groove is formed by blade dicing as an example, but it is also possible to form the groove by plasma etching or laser dicing.

(Thirteenth Embodiment)

A device manufacturing method of the present embodiment is a method for manufacturing a device, comprising: forming a film on a second surface side of a substrate having a first surface and a second surface; forming a groove partially on the substrate so as to leave a film from the first surface side; And the film on the second surface side of the portion where the groove is formed is removed.

Hereinafter, a case where the device to be manufactured is a vertical type power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) using silicon (Si) having metal electrodes on both sides will be described as an example. In this case, the substrate becomes a semiconductor substrate. Further, the film becomes a metal film. The case where the substance to be sprayed onto the metal film is particles containing carbon dioxide will be described as an example. Further, particles containing carbon dioxide (hereinafter, simply referred to as carbon dioxide particles) are particles containing carbon dioxide as a main component. In addition to carbon dioxide, for example, it may contain inevitable impurities.

11 (A), 11 (B), 11 (C), 11 (D), 11 (E), 11 (F) and 11 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, a base region of a vertical MOSFET (semiconductor element) is formed on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface A gate insulating film, a gate electrode, and a source electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film. It is preferable that the silicon substrate 10 is exposed on the surface of the dicing region provided on the surface side.

Then, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 (Fig. 11 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a metal film 14 is formed on the back surface side of the silicon substrate 10 (Fig. 11 (B)). The metal film 14 is formed on substantially the entire back surface.

The metal film 14 is a drain electrode of the MOSFET. The metal film 14 is, for example, a heterogeneous metal laminated film. The metal film 14 is, for example, a laminated film of aluminum / titanium / nickel / gold from the back side of the silicon substrate 10. [ The metal film 14 is formed by, for example, a sputtering method. The film thickness of the metal film 14 is, for example, 0.5 m or more and 1.0 m or less.

Then, the silicon substrate 10 is placed on the tray 36 with its backside down. Only the peripheral portion of the silicon substrate 10 is supported by the tray 36. Except for the peripheral portion of the silicon substrate 10, there is a gap between itself and the tray 36. The metal film 14 in the peripheral portion of the silicon substrate 10 and the peripheral portion of the tray 36 may be fixed using an adhesive layer. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 11 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 so that the metal film 14 on the back surface side is exposed from the surface side along the dicing region provided on the surface side of the silicon substrate 10 (D) of FIG. Here, the dicing region is a predetermined region having a predetermined width for dividing a plurality of semiconductor elements into a plurality of semiconductor chips by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided on the surface side of the silicon substrate 10, for example, in a lattice shape to partition the semiconductor elements.

The groove 20 is formed by, for example, plasma etching. Plasma etching is a so-called Bosch process in which, for example, an isotropic etching step using an F-based radical, a protective film forming step using a CF 4 radical, and anisotropic etching using a F-based ion are repeated.

The grooves 20 are preferably formed by etching the entire surface of the silicon substrate 10 with the protective film on the front surface side as a mask. According to this method, since lithography is not used, the manufacturing process can be simplified and the cost can be reduced.

Then, carbon dioxide particles are sprayed from the surface side of the silicon substrate 10 (Fig. 11 (E)). By spraying the carbon dioxide particles, the metal film 14 on the back surface side of the portion where the groove 20 is formed is removed. The metal film 14 is physically removed by the carbon dioxide particles (Fig. 11 (F)).

The carbon dioxide particles are carbon dioxide in a solid state. The carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, a pellet shape, a powder shape, a spherical shape or an irregular shape.

The carbon dioxide particles are produced, for example, by adiabatically expanding liquefied carbon dioxide gas. The generated carbon dioxide particles are injected from the nozzle together with, for example, nitrogen gas, and sprayed onto the metal film 14. [ It is preferable that the average particle diameter of the carbon dioxide particles is 10 占 퐉 or more and 200 占 퐉 or less. The average particle diameter of the carbon dioxide particles can be obtained, for example, by capturing the carbon dioxide particles ejected from the nozzle with a high-speed camera and measuring the particles in the captured image.

The spot diameter on the surface of the metal film 14 when the carbon dioxide particles are injected into the metal film 14 is preferably 3 mm or more and 10 mm or less, for example.

The MOSFETs divided by the removal of the metal film 14 on the backside of the groove 20 are dropped and held on the tray 36 (Fig. 11 (G)).

Hereinafter, the operation and effect of the device manufacturing method of the present embodiment will be described.

When the metal film 14 is formed also on the back side of the silicon substrate 10 like the vertical MOSFET, it is necessary to remove the metal film 14 on the back side of the dicing region at the time of dicing. For example, when the semiconductor substrate 10 and the metal film 14 are simultaneously removed from the surface side by blade dicing, the metal film 14 at the end of the groove 20 in the dicing region is curled up to the back side , So-called burrs occur.

If burrs of the metal film 14 are formed, for example, the semiconductor chip may fail to be visually inspected and may not be commercialized. In addition, when the semiconductor chip and the metal bed are bonded by a bonding material such as solder, adhesion at the burr portion is deteriorated, which may cause bonding failure.

The groove 20 is formed along the dicing region of the silicon substrate 10 and then the carbon dioxide particles are sprayed from the surface side and the metal film 14 in the portion that spans the groove 20 is removed do. The removed metal film 14 is shrunk in the space on the side of the tray 36, and the occurrence of burrs is suppressed. It is possible to remove only the metal film 14 of the groove 20 in a self-aligning manner.

It is considered that the removal of the metal film 14 in the portion over the groove 20 is mainly caused by the physical impact of the carbon dioxide particles. In addition, since the metal film 14 is quenched by the low temperature carbon dioxide particles and the force of vaporization and expansion of the carbon dioxide impinging on the metal film 14 is applied, the effect of removing the metal film 14 by the physical impact As shown in Fig.

In addition, when the groove 20 of the silicon substrate 10 is formed by blade dicing, the silicon substrate 10 at the back side of the groove 20 may be chipped (chipped). In this embodiment, since the groove 20 is formed by plasma etching, it is possible to prevent the silicon substrate 10 at the end portion on the back side of the groove 20 from being cut out.

In addition, when the groove 20 of the silicon substrate 10 is formed by blade dicing, a width at least equal to the thickness of the blade is required in the dicing region. For this reason, for example, a dicing region width of 50 mu m or more is required.

In this embodiment, since the groove 20 is formed by plasma etching, the width of the dicing region can be narrowed. For example, the width of the dicing region can be set to, for example, 10 占 퐉 or more and less than 50 占 퐉, and furthermore, 20 占 퐉 or less.

In addition, in the present embodiment, a metal film or the like is removed by physical impact mainly by carbon dioxide particles. Therefore, unlike the case of dry etching, for example, even if the metal film is a different metal laminated film, it is possible to remove it without depending on the difference in chemical properties of each film. Therefore, even in the case of different metal laminated films, it is possible to suppress the shape abnormality and remove it easily.

Particularly, when the groove 20 is formed by plasma etching, as in the present embodiment, the edge irregularity of the metal film 14 on the groove 20 side becomes the groove 20 of the silicon substrate 10, Is smaller than that of the side irregularities. In other words, the surface roughness of the end of the metal film 14 on the groove 20 side is made smaller than the surface roughness of the side surface of the groove 20.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Fourteenth Embodiment)

The device manufacturing method of the present embodiment is different from the thirteenth embodiment in that a semiconductor device having a resin film instead of a metal film is formed on the back side of the silicon substrate 10. [ Hereinafter, the description of the contents overlapping with the thirteenth embodiment will be omitted.

Hereinafter, the case where the device to be manufactured is a semiconductor memory using silicon (Si) having a resin film on the back side will be described as an example.

12 (A), 12 (B), 12 (C), 12 (D), 12 (E), 12 (F) and 12 Sectional view showing a schematic process step of the device manufacturing method of the present embodiment.

First, on the surface side of a silicon substrate (substrate) 10 having a first surface (hereinafter also referred to as a surface) and a second surface (hereinafter also referred to as a back surface) , A power electrode, a ground electrode, and an I / O electrode. Thereafter, a protective film is formed on the uppermost layer of the silicon substrate 10. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film.

Then, a support substrate (support) 12 is bonded to the surface side of the silicon substrate 10 (Fig. 12 (A)). The supporting substrate 12 is, for example, quartz glass.

Then, the back surface side of the silicon substrate 10 is removed by grinding to make the silicon substrate 10 thin. Thereafter, a resin film 30 is formed on the back surface side of the silicon substrate 10 (Fig. 12 (B)). The resin film 30 is formed on substantially the entire back surface.

The resin film 30 is, for example, DAF (Die Attach Film) for bonding the divided semiconductor chips to the substrate. The film thickness of the resin film 30 is, for example, 10 占 퐉 or more and 200 占 퐉 or less.

Then, the silicon substrate 10 is placed on the tray 36 with its backside down. Only the peripheral portion of the silicon substrate 10 is supported by the tray 36. Except for the peripheral portion of the silicon substrate 10, there is a gap between itself and the tray 36. The resin film 30 in the peripheral portion of the silicon substrate 10 and the peripheral portion of the tray 36 may be fixed using an adhesive layer. Thereafter, the support substrate 12 is peeled from the silicon substrate 10 (Fig. 12 (C)).

Subsequently, grooves 20 are partially formed in the silicon substrate 10 so that the resin film 30 on the back surface side is exposed from the front side to the dicing region provided on the front surface side of the silicon substrate 10 (D) of FIG. Here, the dicing region is a predetermined region having a predetermined width for dividing the semiconductor chip by dicing, and is provided on the surface side of the silicon substrate 10. [ In the dicing region, a pattern of semiconductor elements is not formed. The dicing region is provided in a lattice shape on the surface side of the silicon substrate 10, for example.

The grooves 20 are formed, for example, by blade dicing.

Then, carbon dioxide particles are sprayed from the surface side of the silicon substrate 10 (Fig. 12E). By spraying the carbon dioxide particles, the resin film 30 on the back surface side of the portion where the groove 20 is formed is removed. The resin film 30 is physically removed by the carbon dioxide particles (Fig. 12 (F)).

The carbon dioxide particles are carbon dioxide in a solid state. The carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, a pellet shape, a powder shape, a spherical shape or an irregular shape.

The carbon dioxide particles are injected from the nozzle together with nitrogen gas, for example, and sprayed onto the resin film 30. It is preferable that the average particle diameter of the carbon dioxide particles is 10 占 퐉 or more and 200 占 퐉 or less. The average particle diameter of the carbon dioxide particles can be obtained, for example, by capturing the carbon dioxide particles ejected from the nozzle with a high-speed camera and measuring the particles in the captured image.

It is preferable that the spot diameter on the surface of the resin film 30 when the carbon dioxide particles are injected onto the resin film 30 is, for example, 3 mm or more and 10 mm or less.

The resin film 30 on the back side of the groove 20 is removed so that the divided semiconductor memories are dropped on the tray 36 and held there (FIG. 12 (G)).

Hereinafter, the operation and effect of the device manufacturing method of the present embodiment will be described.

For example, in a semiconductor device used in a small electronic apparatus represented by a cellular phone, such as a semiconductor memory, a BGA (Ball Grid Array) or an MCP (Multi Chip Package), which is a small and thin semiconductor package, is used. In the BGA or MCP, a film-shaped die bonding material such as DAF is used instead of the die-bonding material in paste state.

When the resin film 30 such as DAF is formed on the back side of the silicon substrate 10, it is necessary to remove the resin film 30 on the back side of the dicing region at the time of dicing. For example, when the semiconductor substrate 10 and the resin film 30 are simultaneously removed from the surface side by blade dicing, the resin film 30 is peeled off from the end of the groove 20 in the dicing region, There is a problem that the cut surface of the film 30 does not become a straight line but becomes irregular.

The grooves 20 are formed along the dicing region of the silicon substrate 10 and then the carbon dioxide particles are sprayed from the surface side to the resin film 30 and the resin The membrane 30 is removed. The removed resin film 30 is shrunk in the space on the side of the tray 36, and the occurrence of burrs is suppressed. Further, the cut surface of the resin film 30 becomes linear.

It is considered that the removal of the resin film 30 in the portion extending over the groove 20 is mainly caused by the physical impact of the carbon dioxide particles. In addition, since the resin film 30 is quenched by the low temperature carbon dioxide particles and the force of vaporization and expansion of the carbon dioxide impinging on the resin film 30 is applied, the removal effect of the resin film 30 by the physical impact As shown in Fig.

As described above, according to the present embodiment, it becomes possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a resin film.

(Fifteenth embodiment)

The device manufacturing method of this embodiment is the same as the thirteenth embodiment except that pressurized water (water jet) is used instead of carbon dioxide particles. Hereinafter, the description of the contents overlapping with the thirteenth embodiment will be omitted.

In this embodiment, the pressurized water is sprayed from the surface side of the silicon substrate 10 to the metal film 14. The metal film 14 on the back surface side of the groove 20 is removed by spraying pressurized water. The metal film 14 is physically removed by the pressurized water. This processing is so-called water jet processing.

As described above, according to the present embodiment, it is also possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

(Sixteenth Embodiment)

The device manufacturing method of the present embodiment is similar to the thirteenth embodiment except that pressurized water containing abrasive grains is used in place of carbon dioxide particles. Hereinafter, the description of the contents overlapping with the thirteenth embodiment will be omitted.

In this embodiment, the pressurized water containing abrasive grains is sprayed from the surface side of the silicon substrate 10 to the metal film 14. [ The metal film 14 on the back side of the groove 20 is removed by spraying pressurized water containing abrasive grains. The metal film 14 is physically removed by pressurized water containing abrasive grains. This processing is so-called abrasive jet processing.

The abrasive grains are, for example, alumina particles, silicon carbide particles, silica particles and the like.

As described above, according to the present embodiment, it is also possible to provide a device manufacturing method capable of suppressing a shape or the like at the time of processing a metal film.

In the thirteenth embodiment, the case where the grooves are formed by plasma etching is described as an example, but it is also possible to form the grooves by blade dicing or laser dicing. In the fourteenth embodiment, the groove is formed by blade dicing as an example, but it is also possible to form the groove by plasma etching or laser dicing.

In the thirteenth to sixteenth embodiments, the grooves are formed in such a manner that the metal film or the resin film is exposed. However, it is also possible to form grooves to leave a part of the substrate. In this case, by spraying the material, the substrate of the remaining trench and the metal film or the resin film are simultaneously removed.

[Example]

 Hereinafter, examples will be described.

[Example 1]

Dicing of a silicon substrate having a plurality of semiconductor elements on its surface and a metal film on its back surface was performed. A method similar to that of the first embodiment was used. First, etching was performed from the surface side of the silicon substrate until the metal film was exposed by a plasma etching (Bosch process), and grooves were formed. Thereafter, carbon dioxide particles were sprayed onto the surface of the metal film from the back side, and the metal film on the back side of the groove was removed.

The average particle diameter of the carbon dioxide particles was set to 10 μm or more and 200 μm or less. The spot diameter on the surface of the metal film when the carbon dioxide particles were injected into the metal film was 3 mm.

Figs. 13 (A), 13 (B), 13 (C), 14 (A) and 14 (B) are SEM photographs after dicing of the embodiment, This is an optical microscope photograph. 15 was photographed on the metal film side.

 Particularly, as is apparent from Figs. 13A, 13B and 13C, a shape abnormality (bur) in which the metal film is rolled up at the end of the groove is not observed. In addition, particularly, as shown in Fig. 13C, the end portion of the metal film is located on the opposite side of the groove from the boundary silicon end portion of the silicon substrate and the metal film. The end portion of the metal film is inclined in a direction away from the groove toward the surface of the metal film from the boundary between the silicon substrate and the metal film. The inclination becomes gentle toward the metal film surface.

In particular, as is apparent from Fig. 15, the end portion of the metal film has a small unevenness and is processed linearly. The protruding amount of the metal film toward the groove side is controlled to be less than half of the groove width. In addition, in particular, as shown in Figs. 14A, 14B and 15, concave portions and scratches caused by collision of carbon dioxide particles are not seen on the surface of the metal film.

Particularly, as shown in Figs. 13A, 13B and 13C, wavy irregularities caused by the Bosch process are observed on the side surfaces of the silicon substrate. As a result, the concave-convex difference at the groove-side end of the metal film is smaller than the concave-convex difference of the groove at the groove side.

[Example 2]

Dicing of a silicon substrate having a plurality of semiconductor elements on its surface and a metal film on its back surface was performed. First, etching was performed from the surface side of the silicon substrate until the metal film was exposed by a plasma etching (Bosch process), and grooves were formed. Thereafter, water pressurized from the back side was sprayed onto the surface of the metal film, and the metal film on the back side of the groove was removed.

16 (A), 16 (B) and 16 (C) are SEM photographs of the second embodiment after dicing. 16C was photographed on the metal film side.

As in the first embodiment, the metal film of the groove portion is removed, and no abnormal shape (bur) as if the metal film is curled up at the end of the groove is observed. As is apparent from Fig. 16 (B), the end portion of the metal film is located on the groove side with respect to the boundary silicon end portion between the silicon substrate and the metal film. Further, the surface of the metal film has a shape extending to the groove side.

Particularly, as is apparent from FIG. 16 (C), a portion where the unevenness of the end portion of the metal film is large and the amount of projection of the metal film toward the groove side is equal to or more than half of the groove width is also observed.

[Example 3]

Dicing of a silicon substrate having a plurality of semiconductor elements on its surface and a metal film on its back surface was performed. First, etching was performed from the surface side of the silicon substrate until the metal film was exposed by a plasma etching (Bosch process), and grooves were formed. Thereafter, pressurized water containing abrasive grains was sprayed onto the surface of the metal film from the back side, and the metal film on the back side of the groove was removed. The metal film was removed by so-called abrasive jet processing.

17 is an optical microscope photograph of Example 3 after dicing. 17 was photographed on the metal film side.

As in the first embodiment, the metal film of the groove portion is removed, and no abnormal shape (bur) as if the metal film is curled up at the end of the groove is observed. On the surface of the metal film, scratches due to abrasive grains were observed.

(Comparative Example 1)

Dicing of a silicon substrate having a plurality of semiconductor elements on its surface and a metal film on its back surface was performed. The silicon substrate and the metal film were simultaneously removed from the surface side by blade dicing.

18 (A), 18 (B) and 18 (C) are SEM photographs of Comparative Example 1 after dicing. FIG. 18C is an enlarged view of a portion surrounded by a circle in FIG. 18B.

As shown in Figs. 18 (A), 18 (B), and 18 (C), a shape abnormality (bur) in which the metal film was rolled up at the end of the groove was observed. Further, as shown in Fig. 18 (A), chipping of silicon was observed near the boundary between the silicon substrate and the metal film.

(Comparative Example 2)

Dicing of a silicon substrate having a plurality of semiconductor elements on its surface and a metal film on its back surface was performed. The silicon substrate and the metal film were simultaneously removed from the surface side by laser dicing.

19 (A), 19 (B) and 19 (C) are SEM photographs of the comparative example 2 after dicing. 19C is photographed on the metal film side.

A structure showing that the surface was melted by laser energy was confirmed on the groove side surface of the silicon substrate and the end portion of the metal film.

Comparing Examples 1 to 3 and Comparative Examples 1 and 2, it was confirmed that, according to the Examples in particular, the shape abnormality of burrs and the like was suppressed. Particularly, in Example 1, it was confirmed that scratches and scratches on the surface of the metal film were also suppressed. Particularly, in Example 1, it was clear that the end portion of the metal film had a small irregularity and was processed linearly.

In the first to sixteenth embodiments, the case where the semiconductor element is a vertical type MOSFET or a semiconductor memory has been described as an example, but the semiconductor element is not limited to a vertical type MOSFET and a semiconductor memory.

In the first to sixteenth embodiments, the case where the present invention is applied to the fabrication of a MOSFET and a semiconductor memory has been described as an example. However, the present invention can be applied to manufacturing of an IGBT (Insulated Gate Bipolar Transistor), a sophisticated device, MEMS (Micro Electro Mechanical Systems) It is also possible to apply it.

In the first to sixteenth embodiments, the semiconductor substrate has been described as an example of the substrate. However, the present invention can be applied to other substrates such as a ceramic substrate, a glass substrate, and a sapphire substrate other than the semiconductor substrate It is possible.

In the first to sixteenth embodiments, the case where the carbon dioxide particles are jetted onto the metal film or the resin film is described as an example. However, in the case where the jet is ejected from the nozzle, It is also possible to apply other particles. For example, it is also possible to apply nitrogen or argon particles.

In the first to sixteenth embodiments, the metal film and the resin film are described as examples of the film formed on the second surface side, but it is also possible to apply other films such as an inorganic insulating film such as a nitride film or an oxide film Do.

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other forms, and various omissions, substitutions, and alterations can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention described in the claims and their equivalents.

Claims (20)

Forming a film on the second surface side of the substrate having the first surface and the second surface,
Forming a groove partially in the substrate so that the film remains from the first surface side of the substrate,
Wherein a material is sprayed from the second surface side of the substrate to the film and the film on the second surface side of the portion where the groove is formed is removed. The method according to claim 1,
Wherein the film is a metal film or a resin film. The method according to claim 1,
Wherein the material is carbon dioxide-containing particles. The method according to claim 1,
Wherein when forming the groove, the groove is formed such that the film is exposed. The method according to claim 1,
Wherein the substrate is a semiconductor substrate. The method according to claim 1,
The inclination angle of the end of the film on the groove side with respect to the second face is made smaller than the inclination angle with respect to the side face of the groove when the film is removed. The method according to claim 1,
Wherein when forming the groove, the groove is formed by plasma etching. The method according to claim 1,
Wherein the grooves are formed by blade dicing when forming the grooves. The method according to claim 1,
Removing the second side of the substrate before forming the film, and thinning the substrate. The method according to claim 1,
A resin sheet is adhered to the first surface side after the groove is formed and before the film is removed and the resin sheet is covered with a mask to eject the material when the film is removed. 1. A device formed by cutting a laminated structure of a substrate and a metal film or a resin film formed on one side of the substrate,
Wherein an inclination angle of an end portion of the metal film or the resin film with respect to the surface is smaller than an inclination angle with respect to the surface of the side surface of the substrate. 1. A device formed by cutting a laminated structure of a substrate and a metal film or a resin film formed on one side of the substrate,
Wherein a concavo-convex difference of a cut surface of the metal film or the resin film is smaller than a concavo-convex difference of a cut surface of the substrate. 13. The method according to claim 11 or 12,
Wherein the device is a MOSFET, an IGBT, a discrete device, or a MEMS device. Forming a groove partially in the substrate from the first surface side of the substrate having the first surface and the second surface,
The second surface side of the substrate is removed so that the substrate on the second surface side of the groove-formed portion remains,
Forming a film on the second surface side,
And the substrate on the second surface side of the portion where the groove and the film are formed is exposed on the second surface side of the portion where the groove is formed so that the groove is exposed Gt; a < / RTI > device. 15. The method of claim 14,
Wherein the film is a metal film or a resin film. 15. The method of claim 14,
Wherein the material is carbon dioxide-containing particles. Forming a film on the second surface side of the substrate having the first surface and the second surface,
Forming a groove partially in the substrate so that the film remains from the first surface side,
Wherein a material is sprayed from the first surface side and the film on the second surface side of the portion where the groove is formed is removed. 18. The method of claim 17,
Wherein the film is a metal film or a resin film. 18. The method of claim 17,
Wherein the material is carbon dioxide-containing particles. 18. The method of claim 17,
Wherein when forming the groove, the groove is formed such that the film is exposed.
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JP2014231874A JP2016096265A (en) 2014-11-14 2014-11-14 Manufacturing method of device
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