CN105609555B - The manufacturing method of device - Google Patents
The manufacturing method of device Download PDFInfo
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- CN105609555B CN105609555B CN201510553408.6A CN201510553408A CN105609555B CN 105609555 B CN105609555 B CN 105609555B CN 201510553408 A CN201510553408 A CN 201510553408A CN 105609555 B CN105609555 B CN 105609555B
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- film
- slot
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- silicon substrate
- metal film
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 365
- 229910052751 metal Inorganic materials 0.000 claims description 286
- 239000002184 metal Substances 0.000 claims description 286
- 239000011347 resin Substances 0.000 claims description 218
- 229920005989 resin Polymers 0.000 claims description 218
- 239000002245 particle Substances 0.000 claims description 148
- 239000004065 semiconductor Substances 0.000 claims description 116
- 238000001020 plasma etching Methods 0.000 claims description 28
- 239000007921 spray Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 abstract description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 258
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 252
- 229910052710 silicon Inorganic materials 0.000 description 252
- 239000010703 silicon Substances 0.000 description 252
- 238000005520 cutting process Methods 0.000 description 142
- 229910002092 carbon dioxide Inorganic materials 0.000 description 126
- 239000001569 carbon dioxide Substances 0.000 description 126
- 238000000034 method Methods 0.000 description 33
- 230000001681 protective effect Effects 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 20
- 238000000227 grinding Methods 0.000 description 19
- 239000012528 membrane Substances 0.000 description 18
- 239000006061 abrasive grain Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000004408 titanium dioxide Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- GCNLQHANGFOQKY-UHFFFAOYSA-N [C+4].[O-2].[O-2].[Ti+4] Chemical compound [C+4].[O-2].[O-2].[Ti+4] GCNLQHANGFOQKY-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000007664 blowing Methods 0.000 description 6
- 235000011089 carbon dioxide Nutrition 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000002309 gasification Methods 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 150000003254 radicals Chemical class 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 241000790917 Dioxys <bee> Species 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Present application is related to a kind of device and its manufacturing method comprising film.The manufacturing method of the device of embodiment is to form film in the 2nd surface side with the 1st face and the substrate in the 2nd face, slot is formed locally in substrate in a manner of keeping film remaining from the 1st surface side, and from the 2nd surface side to film injecting substances, removal forms the film of the 2nd surface side at slotted position.
Description
Related application
Present application enjoy with Japanese patent application 2014-231874 (applying date: on November 14th, 2014), Japan specially
Benefit application No. 2014-231875 (applying date: on November 14th, 2014) and Japanese patent application 2015-14569 (applying date:
On January 28th, 2015) be basic application case priority.Present application includes base by referring to the multiple basic application case
The full content of plinth application case.
Technical field
Embodiments of the present invention are related to a kind of device and its manufacturing method comprising films such as metal film, resin films.
Background technique
Along the cutting region set on semiconductor substrate to the multiple semiconductor elements being formed in the semiconductor substrates such as chip
Part is die cut, and multiple semiconductor chips are thus divided into.In being formed on one side as semiconductor element for semiconductor substrate
In the case where the resin films such as the metal film of electrode or glutinous epitaxial, when cross cutting, needs also to remove the metal film or resin of cutting region
Film.
As the method for removal metal film or resin film, such as there are as below methods: cutting (blade dicing) by piece
And it is removed simultaneously by semiconductor substrate, with metal film or resin film.In the case, metal film or resin film are easy to produce protrusion
Shape anomalies such as (burrs).If generating the shape anomaly of metal film or resin film, semiconductor chip is judged as visual examination
Bad or generation bottom plate and semiconductor chip engagement is bad, so that product yield declines, and becomes problem.
Summary of the invention
Embodiments of the present invention provide the device and its manufacturing method of a kind of shape anomaly when being able to suppress processing of films.
The manufacturing method of the device of embodiment is formed in the 2nd surface side with the 1st face and the substrate in the 2nd face
Film is formed locally slot in the substrate in a manner of keeping the film remaining from the 1st surface side, and from the 2nd surface side to
The film injecting substances, so that the film of the 2nd surface side at the position for being formed with the slot be removed.
Detailed description of the invention
Figure 1A, 1B, 1C, 1D, 1E, 1F, 1G are the exemplary steps section views for indicating the manufacturing method of device of the 1st embodiment
Figure.
Fig. 2 is the schematic sectional view of the device manufactured by the manufacturing method of the device of the 1st embodiment.
Fig. 3 A, 3B, 3C, 3D, 3E, 3F, 3G are the exemplary steps section views for indicating the manufacturing method of device of the 2nd embodiment
Figure.
Fig. 4 A, 4B, 4C, 4D, 4E, 4F, 4G are the exemplary steps section views for indicating the manufacturing method of device of the 5th embodiment
Figure.
Fig. 5 A, 5B, 5C, 5D, 5E, 5F, 5G are the exemplary steps section views for indicating the manufacturing method of device of the 6th embodiment
Figure.
Fig. 6 A, 6B, 6C, 6D, 6E, 6F, 6G are the exemplary steps section views for indicating the manufacturing method of device of the 7th embodiment
Figure.
Fig. 7 A, 7B, 7C, 7D, 7E, 7F, 7G are the exemplary steps section views for indicating the manufacturing method of device of the 8th embodiment
Figure.
Fig. 8 A, 8B, 8C, 8D, 8E, 8F, 8G are the exemplary steps section views for indicating the manufacturing method of device of the 9th embodiment
Figure.
Fig. 9 is the schematic sectional view of the device manufactured by the manufacturing method of the device of the 9th embodiment.
Figure 10 A, 10B, 10C, 10D, 10E, 10F, 10G are the signals for indicating the manufacturing method of device of the 10th embodiment
Step cross-sectional view.
Figure 11 A, Figure 11 B, Figure 11 C, Figure 11 D, Figure 11 E, Figure 11 F, Figure 11 G are the systems for indicating the device of the 13rd embodiment
Make the exemplary steps cross-sectional view of method.
Figure 12 A, Figure 12 B, Figure 12 C, Figure 12 D, Figure 12 E, Figure 12 F, Figure 12 G are the systems for indicating the device of the 14th embodiment
Make the exemplary steps cross-sectional view of method.
Figure 13 A, 13B, 13C are the SEM photographs after the cross cutting of embodiment 1.
Figure 14 A, 14B are the SEM photographs after the cross cutting of embodiment 1.
Figure 15 is the optical microscope photograph after the cross cutting of embodiment 1.
Figure 16 A, 16B, 16C are the SEM photographs after the cross cutting of embodiment 2.
Figure 17 is the optical microscope photograph after the cross cutting of embodiment 3.
Figure 18 A, 18B, 18C are the SEM photographs after the cross cutting of comparative example 1.
Figure 19 A, 19B, 19C are the SEM photographs after the cross cutting of comparative example 2.
Specific embodiment
Hereinafter, the embodiments of the present invention will be described with reference to the drawings.In addition, in the following description, to identical or
The additional the same symbol such as similar component, and for it is stated that the component etc. crossed the description thereof is omitted as appropriate.
(the 1st embodiment)
The manufacturing method of the device of present embodiment is to form film in the 2nd surface side with the 1st face and the substrate in the 2nd face,
The partial shape grooving on substrate in such a way that film is remaining from the 1st surface side, and from the 2nd surface side to film injecting substances, to will be formed
The film of 2nd surface side at slotted position removes.
Hereinafter, being to have the longitudinal type power MOSFET of silicon (Si) in the use that two sides has metal electrode with the device to be manufactured
The feelings of (Metal Oxide Semiconductor Field Effect Transistor, metal oxide field imitate transistor)
It is illustrated for condition.In the case, substrate is semiconductor substrate.In addition, film is metal film.In addition, to be sprayed to metal film
The substance penetrated be include carbon dioxide particle in case where be illustrated.In addition, so-called includes the grain of carbon dioxide
Son (also only describing below is carbon dioxide particles), refers to the particle using carbon dioxide as principal component.Other than carbon dioxide,
For example inevitable impurity can be contained.
Figure 1A, 1B, 1C, 1D, 1E, 1F, 1G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side, formed the base region of longitudinal type MOSFET (semiconductor element), source region, gate insulating film, gate electrode,
The pattern of source electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is the tree such as polyimides
The inorganic insulating membranes such as adipose membrane, silicon nitride film or silicon oxide film.It is desirable that on the surface for the cutting region for being set to face side, silicon
Substrate 10 exposes.
Next, the face side in silicon substrate 10 is bonded support substrate (supporter) 12 (Figure 1A).For support substrate 12
Such as quartz glass.
Next, removing the back side of silicon substrate 10 by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms metal film 14 (Figure 1B).Metal film 14 is set to the substantially entire surface at the back side.
Metal film 14 is the drain electrode of MOSFET.Metal film 14 is the stacked film of such as dissimilar metal.Metal film 14 is
Such as aluminium/titanium/ni au stacked film is stacked gradually from the back side of silicon substrate 10.Metal film 14 be for example, by sputtering method and
It is formed.The film thickness of metal film 14 is such as 0.5 μm or more and 1.0 μm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 then in metal film 14 surface.Later, it removes and supports from silicon substrate 10
Substrate 12 (Fig. 1 C).
Next, along the cutting region for the face side for being set to silicon substrate 10, with the metal film 14 of back side from face side
The mode of exposing partial shape grooving 20 (Fig. 1 D) on silicon substrate 10.Herein, so-called cutting region refers to for by cross cutting
Multiple semiconductor elements are divided into the presumptive area with specific width of multiple semiconductor chips, and are set to silicon substrate 10
Face side.The pattern of semiconductor element is not formed in cutting region.Cutting region is in such as 10 face side of silicon substrate to incite somebody to action
The clathrate setting of the mode that semiconductor element separates.
Slot 20 is formed for example, by plasma etching.Plasma etching be so-called wave wish technique, such as repeatedly into
Exercise the isotropic etch step for having F system free radical, using there is CF4It is the protective film forming step of free radical, using there is F
It is the anisotropic etching of ion.
Preferably slot 20 using the protective film of the face side of silicon substrate 10 as mask, is formed by overall etch.According to
This method can be realized the simplification of manufacturing step and cost effective due to not using lithographic.
Next, the face side in silicon substrate 10 is bonded resin sheet 22.Resin sheet 22 is so-called cross cutting piece.Resin sheet 22
It is fixed on the frame 24 of such as metal.Resin sheet 22 is then in the surface of the protective film of face side or metal electrode.Later, it shells
Resin sheet 16 (Fig. 1 E) from back side.
Next, from the back side side of silicon substrate 10 to 14 sparging carbon dioxide particle of metal film (Fig. 1 F).Pass through injection two
Carbon particle is aoxidized, and the metal film 14 for the back side for being formed with the position of slot 20 is removed.Metal film 14 is by utilizing dioxy
Change carbon particle physically to cut the slot 20 into cavity portion and be removed (Fig. 1 G).
Carbon dioxide particles are the carbon dioxide of solid state.Carbon dioxide particles are so-called dry ice.Titanium dioxide carbon granules
The shape of son is such as graininess, powdered, spherical or indefinite shape.
Carbon dioxide particles are generated for example, by making the heat-insulated expansion of liquefied carbon dioxide gas.Generated titanium dioxide
Carbon particle is to spray together with such as nitrogen from nozzle, and be blown to metal film 14.The average grain diameter of carbon dioxide particles is managed
What is thought is 10 μm or more and 200 μm or less.The average grain diameter of carbon dioxide particles can for example, by with high speed camera shooting from
The carbon dioxide particles of nozzle injection, and measure the particle length in captured image and find out.In addition, the grain of 1 particle
Diameter is set as the average value of such as circumscribed rectangular major diameter and minor axis with the particle of image.In addition, the partial size of particle is set as rigid
Partial size after nozzle ejection.In addition, the point diameter on 14 surface of metal film when carbon dioxide particles are blowed to metal film 14 is ideal
Be such as φ 3mm or more and φ 10mm or less.
When blowing carbon dioxide particles and removing metal film 14, as shown in fig. 1F, it is generally desirable to 26 covering resin of mask
The region of piece 22.By with the region of 26 covering resin piece 22 of mask, being able to suppress such as resin sheet 22 because of carbon dioxide particles
Impact and from frame 24 peel off situation.Mask 26 is such as metal.
Later, by removing the resin sheet 22 of the face side of silicon substrate 10, and multiple MOSFET after being divided.
Hereinafter, being illustrated to the functions and effects of the manufacturing method of the device of present embodiment.
As longitudinal type MOSFET, in the case where the back side of silicon substrate 10 is also formed with metal film 14, need when cross cutting
Also the metal film 14 of the back side of cutting region to be removed.For example, by piece cutting from face side by semiconductor substrate
10, in the case that metal film 14 removes simultaneously, the metal film 14 of 20 end of slot of the cutting region surface side that can support or oppose is rolled, and generates institute
The burr of meaning.
If generate metal film 14 burr, have the visual examination of such as semiconductor chip it is bad and can not product load
Sorrow.In addition, making such as when being engaged semiconductor chip with the bottom plate of metal by grafting material solder because of the part of burr
It obtains adhesion to be deteriorated, there is generation to engage undesirable worry.
In the present embodiment, after forming slot 20 along the cutting region of silicon substrate 10, from back side side to metal film 14
Carbon dioxide particles are blowed, will be removed across the metal film 14 of the part of slot 20.Metal film 14 through removing is cut into cavity
Slot 20, therefore it is able to suppress the generation of burr.It can remove to autoregistration the metal film 14 of slot 20.
The physical impact mainly by carbon dioxide particles is thought in removal across the metal film 14 of the part of slot 20
It generates.Further, it is contemplated that by carrying out quickly cooling to metal film 14 with the carbon dioxide particles of low temperature and applying impact metal film 14
The gasification expansive force of carbon dioxide, and promote the removal effect of the metal film 14 using physical impact.
In addition, having the silicon of the end of the back side of time slot 20 in the case where forming slot 20 to silicon substrate 10 with piece cutting
Substrate 10 can generate notch (fragment).It in the present embodiment, is slot 20 to be formed by plasma etching, therefore can prevent
The notch that the silicon substrate 10 of the end of the back side of slot 20 generates.
In addition, in the case where forming slot 20 to silicon substrate 10 with piece cutting, thickness that cutting region needs at least to be sliced
Above width.Thus, for example needing 50 μm or more of cutting region width.
It in the present embodiment, is slot 20 to be formed by plasma etching, therefore the width of cutting region can be made to become
It is narrow.For example, the width of cutting region is set as such as 10 μm or more and not up to 50 μm, additionally it is possible to further be set as 20 μm or less.
In addition, in the present embodiment, mainly removing metal film etc. by the physical impact of carbon dioxide particles.Cause
This, for example, from dry-etching the case where it is different, also can not be by the chemistry of each film even if metal film is the stacked film of dissimilar metal
Difference of property or so and be removed.Therefore, even if the stacked film for dissimilar metal also can easily inhibit shape anomaly
And it is removed.
It is by the metal film of substrate and the one side for being set to substrate by the device that the manufacturing method of present embodiment manufactures
Lit-par-lit structure cutting and the device after singualtion, the end of metal film are opposite relative to the side that the inclination angle in face is less than substrate
In the inclination angle in the face.In addition, being by substrate and to be set to substrate by the device that the manufacturing method of present embodiment manufactures
One side metal film lit-par-lit structure cutting and the device after singualtion, the bumps difference of the section of metal film are less than substrate
The bumps of section are poor.
Fig. 2 is the schematic sectional view of the device manufactured by the manufacturing method of present embodiment.It indicates near slot 20
Cross sectional shape.As shown in Fig. 2, inclination angle (θ 1) of the end of 20 side of slot of metal film 14 relative to the back side (the 2nd face), is less than slot
Inclination angle (θ 2) of 20 side relative to the back side (the 2nd face).
The end of metal film 14 is more located at the opposite side of slot than the silicon end of silicon substrate 10 and the boundary of metal film 14.Metal
The end of film 14 is tilted from the boundary of silicon substrate 10 and metal film 14 towards the surface of metal film 14 to the direction far from slot.Incline
Tiltedly flatten slow with towards 14 surface of metal film.In addition, the angle of the upper surface side of the end of metal film 14 is curved surface.Metal film
14 end has shape shown in Fig. 2, and engagement characteristics whens MOSFET to be engaged in bottom plate etc. thus are promoted.
In addition, especially as in the present embodiment, in the case where forming slot 20 by plasma etching, metal film
The bumps difference of 14 section (end of 20 side of slot of metal film 14) is less than the section (side of slot 20) of silicon substrate 10
It is concave-convex poor.In other words, the surface roughness of the end of 20 side of slot of metal film 14 is less than the surface roughness of the side of slot 20.
More than, according to the present embodiment, it is capable of providing a kind of device of shape anomaly when can inhibit processing metal film
Manufacturing method.
(the 2nd embodiment)
The manufacturing method of the device of present embodiment is with the 1st embodiment the difference lies in that the semiconductor device of manufacture
Not have metal film in the back side of silicon substrate 10 but has resin film.Hereinafter, about duplicate interior with the 1st embodiment
Hold to omit and describe.
Hereinafter, being that the use that overleaf side has resin film has the semiconductor memory of silicon (Si) with the device to be manufactured
It is illustrated for situation.
Fig. 3 A, 3B, 3C, 3D, 3E, 3F, 3G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side forms memory transistor, peripheral circuit, power electrode, the ground connection electricity of semiconductor memory (semiconductor element)
The pattern of pole, I/O electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is such as polyimides
The inorganic insulating membranes such as resin film, silicon nitride film or silicon oxide film.
Next, the face side in silicon substrate 10 is bonded support substrate 12 (Fig. 3 A).Support substrate 12 is for example quartzy glass
Glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms resin film 30 (Fig. 3 B).Resin film 30 is set to the substantially entire surface at the back side.
Resin film 30 is for example for making the semiconductor chip after segmentation be engaged in DAF (the Die Attach of substrate
Film).The film thickness of resin film 30 is such as 10 μm or more and 200 μm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in 30 surface of resin film.Later, support lining is removed from silicon substrate 10
Bottom 12 (Fig. 3 C).
Next, along the cutting region for the face side for being set to silicon substrate 10, with the resin film 30 of back side from face side
The mode of exposing is in 10 partial shape grooving 20 (Fig. 3 D) of silicon substrate.Herein, so-called cutting region refers to for being incited somebody to action by cross cutting
The presumptive area with specific width of semiconductor chip segmentation, and it is set to the face side of silicon substrate 10.Cutting region not
Form the pattern of semiconductor element.Cutting region is the clathrate setting of face side in such as silicon substrate 10.
Slot 20 is to cut and formed for example, by piece.
Next, the face side in silicon substrate 10 is bonded resin sheet 22.Resin sheet 22 is so-called cross cutting piece.Resin sheet 22
It is fixed on the frame 24 of such as metal.Resin sheet 22 is then in the surface of the protective film of face side or metal electrode.Later, it shells
Resin sheet 16 (Fig. 3 E) from back side.
Next, from the back side side of silicon substrate 10 to 30 sparging carbon dioxide particle of resin film (Fig. 3 F).Pass through injection two
Carbon particle is aoxidized, and the resin film 30 for the back side for being formed with the position of slot 20 is removed.Resin film 30 is by utilizing dioxy
Change carbon particle physically to cut the slot 20 into cavity portion and be removed (Fig. 3 G).
Carbon dioxide particles are the carbon dioxide of solid state.Carbon dioxide particles are so-called dry ice.Titanium dioxide carbon granules
The shape of son is such as graininess, powdered, spherical or indefinite shape.
Carbon dioxide particles are to spray together with such as nitrogen from nozzle, and be blown to resin film 30.Titanium dioxide carbon granules
Preferably 10 μm or more and 200 μm or less of average grain diameter of son.The average grain diameter of carbon dioxide particles is by with for example high
Fast camera shoots the carbon dioxide particles sprayed from nozzle, and measures the particle length in captured image and find out.
In addition, the point diameter on 30 surface of resin film when carbon dioxide particles are blowed to resin film 30 preferably such as φ
3mm or more and φ 10mm or less.
When blowing carbon dioxide particles and removing resin film 30, as illustrated in Figure 3 F preferably with 26 covering resin of mask
The region of piece 22.By with the region of 26 covering resin piece 22 of mask, being able to suppress such as resin sheet 22 because of carbon dioxide particles
Impact and from frame 24 peel off situation.Mask 26 is such as metal.
Later, by removing the resin sheet 22 of the face side of silicon substrate 10, and segmented multiple semiconductor storages are obtained
Device.
Hereinafter, being illustrated to the functions and effects of the manufacturing method of the device of present embodiment.
For example, as semiconductor memory, for using mobile phone as the semiconductor device in the miniaturized electronics of representative
In, it is the BGA (Ball Grid Array, ball grid array) or MCP (Multi used as small-sized, slim semiconductor packages
Chip Package, multi-chip package).In BGA or MCP, other than using paste routing grafting material, also using DAF etc.
Membranaceous routing grafting material.
In the case where the resin films such as DAF 30 are formed in the back side of silicon substrate 10, when cross cutting, needs cutting region also
Back side resin film 30 remove.For example, being gone simultaneously being cut by piece from face side by semiconductor substrate 10, resin film 30
In the case where removing, have resin film 30 from 20 end of slot of cutting region peel off or resin film 30 section and non-linear shape and
The problems such as irregular shape.
In the present embodiment, after forming slot 20 along the cutting region of silicon substrate 10, from back side side to resin film 30
Carbon dioxide particles are blowed, will be removed across the resin film 30 of the part of slot 20.Resin film 30 through removing is cut into cavity
Slot 20, therefore it is able to suppress the peeling of resin film 30.In addition, the section of resin film 30 is linear.
The physical impact mainly by carbon dioxide particles is thought in removal across the resin film 30 of the part of slot 20
It generates.Further, it is contemplated that carrying out quickly cooling to resin film 30 by the carbon dioxide particles using low temperature and applying impact resin film 30
The gasification expansive force of carbon dioxide, and promote the removal effect of the resin film 30 using physical impact.
Pass through the resin film that the device that the manufacturing method of present embodiment manufactures is by substrate and the one side set on substrate
Lit-par-lit structure cutting and a piece, the end of resin film are less than the side of substrate relative to the face relative to the inclination angle in face
Inclination angle.In addition, being by substrate and set on the one side of substrate by the device that the manufacturing method of present embodiment manufactures
The lit-par-lit structure of resin film is cut off and a piece, and the bumps that the bumps difference of the section of resin film is less than the section of substrate are poor.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing resin film
Method.
(the 3rd embodiment)
The manufacturing method of the device of present embodiment is real with the 1st other than using pressure (hydraulic) water to replace carbon dioxide particles
It is identical to apply mode.Hereinafter, about with the 1st duplicate content of embodiment, omit describe.
In the present embodiment, pressure (hydraulic) water is sprayed from the back side side of silicon substrate 10 to metal film 14.By spraying pressure (hydraulic) water,
And the metal film of the back side of slot 20 14 is removed.Metal film 14 is by physically cutting the slot 20 into cavity portion using pressure (hydraulic) water
And it is removed.
More than, according to the present embodiment, also it is capable of providing the system that can inhibit the device of shape anomaly when processing metal film
Make method.
(the 4th embodiment)
The manufacturing method of the device of present embodiment in addition to use the pressure (hydraulic) water containing abrasive grains replace carbon dioxide particles with
Outside, identical as the 1st embodiment.Hereinafter, about with the 1st duplicate content of embodiment, omit describe.
In the present embodiment, the pressure (hydraulic) water containing abrasive grains is sprayed from the back side side of silicon substrate 10 to metal film 14.Pass through
The pressure (hydraulic) water containing abrasive grains is sprayed, and the metal film of the back side of slot 20 14 is removed.Metal film 14 is by using containing grinding
The pressure (hydraulic) water of grain is physically cut the slot 20 into cavity portion and is removed.The processing is so-called abrasive jet machining.
Abrasive grains are such as aluminium oxide particles, carborundum particle, silicon oxide particle.
More than, according to the present embodiment, also it is capable of providing the system that can inhibit the device of shape anomaly when processing metal film
Make method.
(the 5th embodiment)
The manufacturing method of the device of present embodiment is with the 1st embodiment the difference lies in that in substrate partial shape grooving
When, a part of residual substrate.Hereinafter, about with the 1st duplicate content of embodiment, omit describe.
Fig. 4 A, 4B, 4C, 4D, 4E, 4F, 4G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) with the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side, formed the base region of longitudinal type MOSFET (semiconductor element), source region, gate insulating film, gate electrode,
The pattern of source electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is the tree such as polyimides
The inorganic insulating membranes such as adipose membrane, silicon nitride film or silicon oxide film.It is desirable that on the surface for the cutting region for being set to face side, silicon
Substrate 10 exposes.
Next, the face side in silicon substrate 10 is bonded support substrate (supporter) 12 (Fig. 4 A).For support substrate 12
Such as quartz glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms metal film 14 (Fig. 4 B).Metal film 14 is set to the substantially entire surface at the back side.
Metal film 14 is the drain electrode of MOSFET.Metal film 14 is the stacked film of such as dissimilar metal.Metal film 14 is
Such as aluminium/titanium/ni au stacked film is stacked gradually from the back side of silicon substrate 10.Metal film 14 be for example, by sputtering method and
It is formed.The film thickness of metal film 14 is such as 0.5 μm or more and 1.0 μm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in the surface of metal film 14.Later, it removes and supports from silicon substrate 10
Substrate 12 (Fig. 4 C).
Next, being partially formed along the cutting region for the face side for being set to silicon substrate 10 from face side in silicon substrate 10
Slot 20 (Fig. 4 D).Formed slot 20 when, by the silicon substrate 10 of back side it is a part of it is remaining in a manner of form slot 20.Make the back side of slot 20
The semiconductor substrate of side remains 20 μm hereinafter, being more preferably 10 μm of residual or less.
Herein, so-called cutting region refers to for multiple semiconductor elements to be divided into multiple semiconductors by being die cut
The presumptive area with specific width of chip, and it is set to the face side of silicon substrate 10.Cutting region does not form semiconductor element
The pattern of part.Cutting region is by such as clathrate setting in such a way that 10 face side of silicon substrate separates semiconductor element.
Slot 20 is to cut and formed for example, by piece.Slot 20 can also be formed for example, by plasma etching.
Next, the face side in silicon substrate 10 is bonded resin sheet 22.Resin sheet 22 is so-called cross cutting piece.Resin sheet 22
It is fixed on the frame 24 of such as metal.Resin sheet 22 is then in the surface of the protective film of face side or metal electrode.Later, it shells
Resin sheet 16 (Fig. 4 E) from back side.
Next, from the back side side of silicon substrate 10 to 14 sparging carbon dioxide particle of metal film (Fig. 4 F).Pass through injection two
Carbon particle is aoxidized, and the metal film 14 for the back side for being formed with the position of slot 20 and silicon substrate 10 are removed.Metal film 14 and silicon
Substrate 10 is to be removed (Fig. 4 G) and physically cutting slot 20 into cavity portion using carbon dioxide particles.
When blowing carbon dioxide particles, and removing metal film 14 and silicon substrate 10, as illustrated in figure 4f, it is generally desirable to mask
The region of 26 covering resin pieces 22.By with the region of 26 covering resin piece 22 of mask, being able to suppress such as resin sheet 22 because of two
The situation for aoxidizing the impact of carbon particle and being peeled off from frame 24.Mask 26 is such as metal.
Later, by removing the resin sheet 22 of the face side of silicon substrate 10, and segmented multiple MOSFET are obtained.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing metal film
Method.
(the 6th embodiment)
The manufacturing method of the device of present embodiment is with the 2nd embodiment the difference lies in that in substrate partial shape grooving
When, make a part residual of substrate.Hereinafter, about with the 2nd duplicate content of embodiment, omit describe.
Fig. 5 A, 5B, 5C, 5D, 5E, 5F, 5G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side forms memory transistor, peripheral circuit, power electrode, the ground connection electricity of semiconductor memory (semiconductor element)
The pattern of pole, I/O electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is such as polyimides
The inorganic insulating membranes such as resin film, silicon nitride film or silicon oxide film.
Next, the face side in silicon substrate 10 is bonded support substrate 12 (Fig. 5 A).Support substrate 12 is for example quartzy glass
Glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms resin film 30 (Fig. 5 B).Resin film 30 is set to the substantially entire surface at the back side.
Resin film 30 is DAF (the Die Attach for making the semiconductor chip after for example dividing be engaged in substrate
Film).The film thickness of resin film 30 is such as 10 μm or more and 200 μm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in 30 surface of resin film.Later, support lining is removed from silicon substrate 10
Bottom 12 (Fig. 5 C).
Next, being partially formed along the cutting region for the face side for being set to silicon substrate 10 from face side in silicon substrate 10
Slot 20 (Fig. 5 D).Formed slot 20 when, by the silicon substrate 10 of back side it is a part of it is remaining in a manner of form slot 20.The back side of slot 20
Semiconductor substrate remain 20 μm hereinafter, being more preferably residual 10 μm or less.
Herein, so-called cutting region refers to for having specific width for what semiconductor chip divide by being die cut
Presumptive area, and it is set to the face side of silicon substrate 10.Cutting region does not form the pattern of semiconductor element.Cutting region be
Such as the clathrate setting of 10 face side of silicon substrate.
Slot 20 is to cut and formed for example, by piece.Slot 20 can also be formed for example, by plasma etching.
Next, the face side in silicon substrate 10 is bonded resin sheet 22.Resin sheet 22 is so-called cross cutting piece.Resin sheet 22
It is fixed on the frame 24 of such as metal.Resin sheet 22 is then in the surface of the protective film of face side or metal electrode.Later, it shells
Resin sheet 16 (Fig. 5 E) from back side.
Next, from the back side side of silicon substrate 10 to 30 sparging carbon dioxide particle of resin film (Fig. 5 F).Pass through injection two
Carbon particle is aoxidized, and the resin film 30 for the back side for being formed with the position of slot 20 and silicon substrate 10 are removed.Resin film 30 is logical
It crosses and physically cuts the slot 20 into cavity portion using carbon dioxide particles and be removed (Fig. 5 G).
When blowing carbon dioxide particles and removing resin film 30, as illustrated in figure 5f preferably with 26 covering resin of mask
The region of piece 22.By with the region of 26 covering resin piece 22 of mask, and such as resin sheet 22 is able to suppress because of titanium dioxide carbon granules
Son impact and from frame 24 peel off situation.Mask 26 is such as metal.
Later, by removing the resin sheet 22 of the face side of silicon substrate 10, and segmented multiple semiconductor storages are obtained
Device.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing resin film
Method.
(the 7th embodiment)
The manufacturing method of the device of present embodiment is with the 1st embodiment the difference lies in that in substrate partial shape grooving
When, go a part of membrane removal.Hereinafter, about with the 1st duplicate content of embodiment, omit describe.
Fig. 6 A, 6B, 6C, 6D, 6E, 6F, 6G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side, formed the base region of longitudinal type MOSFET (semiconductor element), source region, gate insulating film, gate electrode,
The pattern of source electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is the tree such as polyimides
The inorganic insulating membranes such as adipose membrane, silicon nitride film or silicon oxide film.It is desirable that on the surface for the cutting region for being set to face side, silicon
Substrate 10 exposes.
Next, the face side in silicon substrate 10 is bonded support substrate (supporter) 12 (Fig. 6 A).For support substrate 12
Such as quartz glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms metal film 14 (Fig. 6 B).Metal film 14 is set to the substantially entire surface at the back side.
Metal film 14 is the drain electrode of MOSFET.Metal film 14 is the stacked film of such as dissimilar metal.Metal film 14 is
Such as aluminium/titanium/ni au stacked film is stacked gradually from the back side of silicon substrate 10.Metal film 14 be for example, by sputtering method and
It is formed.The film thickness of metal film 14 is such as 0.5 μm or more and 1.0 μm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in the surface of metal film 14.Later, it removes and supports from silicon substrate 10
Substrate 12 (Fig. 6 C).
Next, being partially formed along the cutting region for the face side for being set to silicon substrate 10 from face side in silicon substrate 10
Slot 20 (Fig. 6 D).When forming slot 20, slot 20 is formed in a manner of removing one of metal film 14 of back side.
Herein, so-called cutting region refers to for multiple semiconductor elements to be divided into multiple semiconductors by being die cut
The presumptive area with specific width of chip, and it is set to the face side of silicon substrate 10.Cutting region does not form semiconductor element
The pattern of part.Cutting region is by such as clathrate setting in such a way that 10 face side of silicon substrate separates semiconductor element.
Slot 20 is to cut and formed for example, by piece.Slot 20 can also be formed for example, by plasma etching.
Next, the face side in silicon substrate 10 is bonded resin sheet 22.Resin sheet 22 is so-called cross cutting piece.Resin sheet 22
It is fixed on the frame 24 of such as metal.Resin sheet 22 is then in the surface of the protective film of face side or metal electrode.Later, it shells
Resin sheet 16 (Fig. 6 E) from back side.
Next, from the back side side of silicon substrate 10 to 14 sparging carbon dioxide particle of metal film (Fig. 6 F).Pass through injection two
Carbon particle is aoxidized, and removes the metal film 14 for being formed with the back side at position of slot 20.Metal film 14 is by utilizing titanium dioxide
Carbon particle physically cuts the slot 20 into cavity portion and is removed (Fig. 6 G).
When blowing carbon dioxide particles, and removing metal film 14, as fig 6 f illustrates, it is generally desirable to 26 covering resin of mask
The region of piece 22.By with the region of 26 covering resin piece 22 of mask, being able to suppress such as resin sheet 22 because of carbon dioxide particles
Impact and from frame 24 peel off situation.Mask 26 is such as metal.
Later, by removing the resin sheet 22 of the face side of silicon substrate 10, and segmented multiple MOSFET are obtained.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing metal film
Method.
(the 8th embodiment)
The manufacturing method of the device of present embodiment is with the 2nd embodiment the difference lies in that in substrate partial shape grooving
When, go a part of membrane removal.Hereinafter, about with the 2nd duplicate content of embodiment, omit describe.
Fig. 7 A, 7B, 7C, 7D, 7E, 7F, 7G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side forms memory transistor, peripheral circuit, power electrode, the ground connection electricity of semiconductor memory (semiconductor element)
The pattern of pole, I/O electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is such as polyimides
The inorganic insulating membranes such as resin film, silicon nitride film or silicon oxide film.
Next, the face side in silicon substrate 10 is bonded support substrate 12 (Fig. 7 A).Support substrate 12 is for example quartzy glass
Glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms resin film 30 (Fig. 7 B).Resin film 30 is set to the substantially entire surface at the back side.
Resin film 30 is DAF (the Die Attach for making the semiconductor chip after for example dividing be engaged in substrate
Film).The film thickness of resin film 30 is such as 10 μm or more and 200 μm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in 30 surface of resin film.Later, support lining is removed from silicon substrate 10
Bottom 12 (Fig. 7 C).
Next, being partially formed along the cutting region for the face side for being set to silicon substrate 10 from face side in silicon substrate 10
Slot 20 (Fig. 7 D).When forming slot 20, slot 20 is formed in a manner of removing one of metal film 14 of back side.
Herein, so-called cutting region refers to for having specific width for what semiconductor chip divide by being die cut
Presumptive area, and it is set to the face side of silicon substrate 10.Cutting region does not form the pattern of semiconductor element.Cutting region be
Such as the clathrate setting of 10 face side of silicon substrate.
Slot 20 is to cut and formed for example, by piece.Slot 20 can also be formed for example, by plasma etching.
Next, the face side in silicon substrate 10 is bonded resin sheet 22.Resin sheet 22 is so-called cross cutting piece.Resin sheet 22
It is fixed on the frame 24 of such as metal.Resin sheet 22 is then in the surface of the protective film of face side or metal electrode.Later, it shells
Resin sheet 16 (Fig. 7 E) from back side.
Next, from the back side side of silicon substrate 10 to 30 sparging carbon dioxide particle of resin film (Fig. 7 F).Pass through injection two
Carbon particle is aoxidized, and the resin film 30 for the back side for being formed with the position of slot 20 is removed.Resin film 30 is by utilizing dioxy
Change carbon particle physically to cut the slot 20 into cavity portion and be removed (Fig. 7 G).
When blowing carbon dioxide particles and removing resin film 30, as shown in Figure 7 F preferably with 26 covering resin of mask
The region of piece 22.By with the region of 26 covering resin piece 22 of mask, being able to suppress such as resin sheet 22 because of carbon dioxide particles
Impact and from frame 24 peel off situation.Mask 26 is such as metal.
Later, by removing the resin sheet 22 of the face side of silicon substrate 10, and segmented multiple semiconductor storages are obtained
Device.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing resin film
Method.
In addition, in the 1st embodiment, be illustrated in case where forming slot using plasma etching, but
It can be cut by piece or laser die cutting forms slot.In addition, being to cut to form slot by piece in the 2nd embodiment
It is illustrated for situation, but also can form slot by plasma etching or laser die cutting.
In addition, in the 1st to the 8th embodiment, be by metal film or resin film expose form slot in case where into
Row explanation, but also slot can be formed in such a way that substrate portions are remaining.In the case, by being sprayed to metal film or resin film
Substance, and the substrate of remaining groove portion is also removed simultaneously.
(the 9th embodiment)
The manufacturing method of the device of present embodiment is from the 1st surface side with the 1st face and the substrate in the 2nd face in substrate part
Form slot, by formed the substrate of the 2nd surface side at slotted position it is remaining in a manner of, the 2nd surface side of substrate is removed, in the 2nd face
Side forms film, and from the 2nd surface side to film injecting substances, will be formed in such a way that slot exposes the 2nd surface side at slotted position film,
And form the substrate removal of the 2nd surface side at slotted position.
Hereinafter, being to have the longitudinal type power MOSFET of silicon (Si) in the use that two sides has metal electrode with the device to be manufactured
It is illustrated in case where (Metal Oxide Semiconductor Field Effect Transistor).In this feelings
Under condition, substrate is semiconductor substrate.In addition, film is metal film.In addition, being to contain carbon dioxide with the substance sprayed to metal film
Particle in case where be illustrated.In addition, (also only describe below is titanium dioxide carbon granules to the so-called particle containing carbon dioxide
Son), refer to the particle using carbon dioxide as principal component.It, also can be containing for example inevitably miscellaneous other than carbon dioxide
Matter.
Fig. 8 A, 8B, 8C, 8D, 8E, 8F, 8G are the exemplary steps section views for indicating the manufacturing method of device of present embodiment
Figure.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side, formed the base region of longitudinal type MOSFET (semiconductor element), source region, gate insulating film, gate electrode,
The pattern of source electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is the tree such as polyimides
The inorganic insulating membranes such as adipose membrane, silicon nitride film or silicon oxide film.It is desirable that on the surface for the cutting region for being set to face side, silicon
Substrate 10 exposes.
Next, being partially formed along the cutting region for the face side for being set to silicon substrate 10 from face side in silicon substrate 10
Slot 20 (Fig. 8 A).Herein, so-called cutting region refers to for multiple partly being led by being die cut for multiple semiconductor elements to be divided into
The presumptive area with specific width of body chip, and it is set to the face side of silicon substrate 10.Cutting region does not form semiconductor
The pattern of element.Cutting region is set by for example clathrate in such a way that 10 face side of silicon substrate separates semiconductor element
It sets.
Slot 20 is formed for example, by plasma etching.Plasma etching is that so-called wave wishes technique, repeats example
As used the isotropic etch step of F system free radical, having used CF4It is the protective film forming step of free radical, using there is F
It is the anisotropic etching of ion.
Preferably slot 20 using the protective film of the face side of silicon substrate 10 as mask, is formed by overall etch.According to
This method can be realized the simplification of manufacturing step and cost effective due to not using lithographic.
The formation of the slot 20 is the so-called DBG (Dicing for overleaf forming slot before grinding in cutting region from face side
Before Griding) processing.Grinding predetermined position when the depth of slot 20 is set as than back side grinding later is (in Fig. 8 A, 8B
Dotted line) it is shallow.In other words, the depth of slot 20 is to remain semiconductor substrate 10 in the back side of slot 20 after the grinding of the back side
Mode is set.
Next, in the face side of silicon substrate 10, the then support substrate (supporter) 12 using following layer (not shown)
(Fig. 8 B).Support substrate 12 is such as quartz glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate (Fig. 8 C).At this point, making
The semiconductor substrate 10 for being formed with the back side at the position of slot 20 remains.The semiconductor substrate of the back side of slot 20 remain 20 μm with
Under, it is more preferably 10 μm of residual or less.
Later, metal film 14 (Fig. 8 D) is formed in the back side of silicon substrate 10.Metal film 14 is set to the substantially entire of the back side
Face.At this point, metal film 14 will not be formed among slot 20 since the back side of slot 20 is there are silicon substrate 10.
Metal film 14 is the drain electrode of MOSFET.Metal film 14 is the stacked film of such as dissimilar metal.Metal film 14 is
Such as aluminium/titanium/ni au stacked film is stacked gradually from the back side of silicon substrate 10.Metal film 14 be for example, by sputtering method and
It is formed.The film thickness of metal film 14 is such as 0.5 μm or more and 1.0 μm or less.
Next, from the back side side of silicon substrate 10 to 14 sparging carbon dioxide particle of metal film (Fig. 8 E).Pass through injection two
Carbon particle is aoxidized, the silicon substrate 10 of the metal film 14 of the back side of slot 20 and the back side at the position for being formed with slot 20 is removed,
Expose slot 20.Metal film 14 and silicon substrate 10 are and physically cutting slot 20 into cavity portion using carbon dioxide particles
It is removed (Fig. 8 F).
Carbon dioxide particles are the carbon dioxide of solid state.Carbon dioxide particles are so-called dry ice.Titanium dioxide carbon granules
The shape of son is such as graininess, powdered, spherical or indefinite shape.
Carbon dioxide particles are generated and making the heat-insulated expansion of such as liquefied carbon dioxide gas.Generated titanium dioxide
Carbon particle is to spray together with such as nitrogen from nozzle, and be blown to metal film 14.The average grain diameter of carbon dioxide particles is managed
What is thought is 10 μm or more and 200 μm or less.The average grain of carbon dioxide particles be diameter be by with such as high speed camera shooting from
The carbon dioxide particles of nozzle injection, and measure the particle length in captured image and find out.
In addition, the point diameter on 14 surface of metal film when carbon dioxide particles are blowed to metal film 14 preferably such as φ
3mm or more and φ 10mm or less.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in the surface of metal film 14.Later, it removes and supports from silicon substrate 10
Substrate 12 (Fig. 8 G).
Later, by removing the resin sheet 16 of the face side of silicon substrate 10, and segmented multiple MOSFET are obtained.
Hereinafter, being illustrated to the functions and effects of the manufacturing method of the device of present embodiment.
As longitudinal type MOSFET, in the case where the back side of silicon substrate 10 is also formed with metal film 14, when cross cutting
Need also to remove the metal film 14 of the back side of cutting region.For example, by piece cutting from face side by semiconductor substrate
10, in the case that metal film 14 removes simultaneously, the metal film 14 of the end of the slot 20 of cutting region surface side of supporting or opposing is rolled, and generates institute
The burr of meaning.
If generate metal film 14 burr, have the visual examination of such as semiconductor chip it is bad and can not product load
Sorrow.In addition, making such as when grafting material by solder engages semiconductor chip with the bottom plate of metal because of burr part
It obtains adhesion to be deteriorated, to there is generation to engage undesirable worry.
In the present embodiment, after forming slot 20 along the cutting region of silicon substrate 10, from back side side to metal film 14
Sparging carbon dioxide particle will be removed across the metal film 14 of the part of slot 20 and silicon substrate 10.The metal film 14 that is removed with
Silicon substrate 10 is cut slot 20 into cavity, therefore is able to suppress the generation of burr.It can only remove to autoregistration the metal of slot 20
Film 14 and silicon substrate 10.
Think mainly across the metal film 14 of the part of slot 20 and the removal of silicon substrate 10 through carbon dioxide particles
Physical impact and generate.Further, it is contemplated that making metal film 14 and 10 quickly cooling of silicon substrate by the carbon dioxide particles of low temperature and applying
The gasification expansive force of the carbon dioxide of metal film 14 and silicon substrate 10 is impacted, and promotes to utilize the metal film 14 and silicon of physical impact
The removal effect of substrate 10.
In addition, in the case where forming slot 20 to silicon substrate 10 by piece cutting, thickness that cutting region needs at least to be sliced
Degree or more width.Thus, for example needing 50 μm or more of cutting region width.
It in the present embodiment, is slot 20 to be formed by plasma etching, therefore the width of cutting region can be made to become
It is narrow.For example, the width of cutting region is such as 10 μm or more and not up to 50 μm, it also can further be set as 20 μm or less.
In addition, in the present embodiment, mainly removing metal film etc. by the physical impact of carbon dioxide particles.Cause
This, for example, from dry-etching the case where it is different, also can not be by the chemistry of each film even if metal film is the stacked film of dissimilar metal
Difference of property or so and be removed.Therefore, even if being the stacked film of dissimilar metal, shape anomaly also can easily be inhibited
And it is removed.
Fig. 9 is the schematic sectional view of the device manufactured by the manufacturing method of present embodiment.It indicates near slot 20
Cross sectional shape.As shown in figure 9, inclination angle (θ 1) of the end of 20 side of slot of metal film 14 relative to the back side (the 2nd face), is less than slot
Inclination angle (θ 2) of 20 side relative to the back side (the 2nd face).
The end of metal film 14 is more located at the opposite side of slot than the silicon end of silicon substrate 10 and the boundary of metal film 14.Metal
The end of film 14 is tilted from the boundary of silicon substrate 10 and metal film 14 towards the surface of metal film 14 to the direction far from slot.Incline
Tiltedly flatten slow with towards 14 surface of metal film.In addition, the angle of the upper surface side of the end of metal film 14 is curved surface.Metal film
14 end has shape shown in Fig. 9, and engagement characteristics whens MOSFET to be engaged in bottom plate etc. thus are promoted.
In addition, especially as in the present embodiment, in the case where forming slot 20 by plasma etching, metal film 14
20 side of slot end bumps difference be less than silicon substrate 10 slot 20 side bumps it is poor.In other words, the slot of metal film 14
The surface roughness of the end of 20 sides is less than the surface roughness of the side of slot 20.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing metal film
Method.
(the 10th embodiment)
The manufacturing method of the device of present embodiment is with the 9th embodiment the difference lies in that the semiconductor device of manufacture
Not have metal film in the back side of silicon substrate 10, but has resin film.Hereinafter, about duplicate with the 9th embodiment
Content is omitted and is described.
Hereinafter, being that the use that overleaf side has resin film has the semiconductor memory of silicon (Si) with the device to be manufactured
It is illustrated for situation.
Figure 10 A, 10B, 10C, 10D, 10E, 10F, 10G are the signal steps for the manufacturing method of device for indicating present embodiment
Rapid cross-sectional view.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side forms memory transistor, peripheral circuit, power electrode, the ground connection electricity of semiconductor memory (semiconductor element)
The pattern of pole, I/O electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is such as polyimides
The inorganic insulating membranes such as resin film, silicon nitride film or silicon oxide film.
Next, being partially formed along the cutting region for the face side for being set to silicon substrate 10 from face side in silicon substrate 10
Slot 20 (Figure 10 A).Herein, so-called cutting region refers to for multiple semiconductor elements to be divided into multiple half by cross cutting
The presumptive area with specific width of conductor chip, and it is set to the face side of silicon substrate 10.Cutting region is not formed and is partly led
The pattern of volume elements part.Cutting region is set by for example clathrate in such a way that 10 face side of silicon substrate separates semiconductor element
It sets.
Slot 20 is to cut and formed for example, by piece.
The formation of the slot 20 is the so-called DBG (Dicing for overleaf forming slot before grinding in cutting region from face side
Before Griding) processing.Grinding predetermined position (Figure 10 A, 10B when the depth of slot 20 is set as than back side grinding later
In dotted line) it is shallow.In other words, the depth of slot 20 is to remain semiconductor substrate 10 in the back side of slot 20 after the grinding of the back side
Mode is set.
Next, in the face side of silicon substrate 10, pass through following layer (not shown) then support substrate (supporter) 12
(Figure 10 B).Support substrate 12 is such as quartz glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate (Figure 10 C).At this point, making
The semiconductor substrate 10 for being formed with the back side at the position of slot 20 remains.The semiconductor substrate of the back side of slot 20 remain 20 μm with
Under, it is more preferably 10 μm of residual or less.
Later, resin film 30 (Figure 10 D) is formed in the back side of silicon substrate 10.Resin film 30 is set to the substantially entire of the back side
Face.
Resin film 30 is DAF (the Die Attach for making the semiconductor chip after for example dividing be engaged in substrate
Film).The film thickness of resin film 30 is such as 10 μm or more and 200 μm or less.
Next, from the back side side of silicon substrate 10 to 30 sparging carbon dioxide particle of resin film (Figure 10 E).Pass through injection two
Carbon particle is aoxidized, in such a way that slot 20 exposes, by the resin film 30 for the back side for being formed with the position of slot 20 and is formed with slot 20
Position back side silicon substrate 10 remove.Resin film 30 and silicon substrate 10 are by utilizing carbon dioxide particles physically
It cuts the slot 20 into cavity portion and is removed (Figure 10 F).
Carbon dioxide particles are the carbon dioxide of solid state.Carbon dioxide particles are so-called dry ice.Titanium dioxide carbon granules
The shape of son is such as graininess, powdered, spherical or indefinite shape.
Carbon dioxide particles are generated and making the heat-insulated expansion of such as liquefied carbon dioxide gas.Generated titanium dioxide
Carbon particle sprays together with such as nitrogen from nozzle, and is blown to metal film 14.The average grain diameter of carbon dioxide particles is ideal
Be 10 μm or more and 200 μm or less.
The average grain diameter of carbon dioxide particles is by shooting the titanium dioxide carbon granules sprayed from nozzle with such as high speed camera
Son, and measure the particle length in captured image and find out.In addition, gold when carbon dioxide particles are blowed to metal film 14
Belong to point diameter preferably such as the φ 3mm or more and φ 10mm or less on 14 surface of film.
Next, the back side in silicon substrate 10 is bonded resin sheet 16.Resin sheet 16 is so-called cross cutting piece.Resin sheet 16
It is fixed on the frame 18 of such as metal.Resin sheet 16 is then in the surface of resin film 30.Later, it removes and supports from silicon substrate 10
Substrate 12 (Figure 10 G).
Later, by removing resin sheet 16, and segmented multiple semiconductor memories are obtained.
Hereinafter, being illustrated to the functions and effects of the manufacturing method of the device of present embodiment.
For example, as semiconductor memory, for using mobile phone as the semiconductor device of the miniaturized electronics of representative
In, it is the BGA (Ball Grid Array) or MCP (Multi Chip used as small-sized, slim semiconductor packages
Package).In BGA or MCP, other than the routing grafting material for using paste, also engaged using DAF etc. membranaceous routing
Material.
In the case where the resin films such as DAF 30 are formed in the back side of silicon substrate 10, when cross cutting, needs also to remove cutting area
The resin film 30 of the back side in domain.For example, being removed simultaneously being cut by piece from face side by semiconductor substrate 10, resin film 30
In the case where, have resin film 30 from 20 end of slot of cutting region peel off or resin film 30 section and non-linear shape but
The problems such as irregular shape.
In the present embodiment, after forming slot 20 along the cutting region of silicon substrate 10, to resin film 30 from back side
Sparging carbon dioxide particle will be removed across the resin film 30 of the part of slot 20 with silicon substrate 10.The resin film 30 that is removed with
Silicon substrate 10 is the slot 20 cut into cavity, therefore is able to suppress the peeling of resin film 30.In addition, the section of resin film 30 is straight
It is linear.
Think mainly across the resin film 30 of the part of slot 20 and the removal of silicon substrate 10 through carbon dioxide particles
Physical impact and generate.Further, it is contemplated that making resin film 30 and 10 quickly cooling of silicon substrate by the carbon dioxide particles of low temperature and applying
The gasification expansive force of the carbon dioxide of resin film 30 and silicon substrate 10 is impacted, and promotes to utilize the resin film 30 and silicon of physical impact
The removal effect of substrate 10.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing resin film
Method.
(the 11st embodiment)
The manufacturing method of the device of present embodiment in addition to use pressure (hydraulic) water (water spray) replace carbon dioxide particles other than, with
9th embodiment is identical.Hereinafter, about with the 9th duplicate content of embodiment, omit describe.
In the present embodiment, pressure (hydraulic) water is sprayed from the back side side of silicon substrate 10 to metal film 14.By spraying pressure (hydraulic) water,
And the metal film of the back side of slot 20 14 and silicon substrate 10 are removed.Metal film 14 is by physically being cut using pressure (hydraulic) water into sky
The slot 20 of cavity portion and be removed.The processing is so-called water spray processing.
More than, according to the present embodiment, also it is capable of providing the system that can inhibit the device of shape anomaly when processing metal film
Make method.
(the 12nd embodiment)
The manufacturing method of the device of present embodiment in addition to use the pressure (hydraulic) water containing abrasive grains replace carbon dioxide particles with
Outside, identical as the 9th embodiment.Hereinafter, about with the 9th duplicate content of embodiment, omit describe.
In the present embodiment, the pressure (hydraulic) water containing abrasive grains is sprayed from the back side side of silicon substrate 10 to metal film 14.Pass through
The pressure (hydraulic) water containing abrasive grains is sprayed, and the metal film of the back side of slot 20 14 and silicon substrate 10 are removed.Metal film 14 is to pass through
The slot 20 into cavity portion is physically cut using the pressure (hydraulic) water containing abrasive grains and is removed.The processing is that so-called abrasive jet adds
Work.
Abrasive grains are such as aluminium oxide particles, carborundum particle, silicon oxide particle.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing metal film
Method.
In addition, in the 9th embodiment, be illustrated in case where forming slot by plasma etching, but
Also it can be cut by piece or laser die cutting forms slot.In addition, being to form slot by piece cutting in the 10th embodiment
In case where be illustrated, but also can form slot by plasma etching or laser die cutting.
(the 13rd embodiment)
The manufacturing method of the device of present embodiment is to form film in the 2nd surface side with the 1st face and the substrate in the 2nd face,
From the 1st surface side in substrate partial shape grooving in such a way that film is remaining, and from the 1st surface side injecting substances, and slotted portion will be formed
The film removal of 2nd surface side of position.
Hereinafter, being to have the longitudinal type power MOSFET of silicon (Si) in the use that two sides has metal electrode with the device to be manufactured
It is illustrated in case where (Metal Oxide Semiconductor Field Effect Transistor).In this feelings
Under condition, substrate is semiconductor substrate.In addition, film is metal film.In addition, being to contain carbon dioxide with the substance sprayed to metal film
Particle in case where be illustrated.In addition, (also only describe below is titanium dioxide carbon granules to the so-called particle containing carbon dioxide
Son), refer to the particle using carbon dioxide as principal component.It, also can be containing for example inevitably miscellaneous other than carbon dioxide
Matter.
Figure 11 A, Figure 11 B, Figure 11 C, Figure 11 D, Figure 11 E, Figure 11 F, Figure 11 G are the manufactures for indicating the device of present embodiment
The exemplary steps cross-sectional view of method.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side, formed the base region of longitudinal type MOSFET (semiconductor element), source region, gate insulating film, gate electrode,
The pattern of source electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is the tree such as polyimides
The inorganic insulating membranes such as adipose membrane, silicon nitride film or silicon oxide film.It is desirable that on the surface for the cutting region for being set to face side, silicon
Substrate 10 exposes.
Next, the face side in silicon substrate 10 is bonded support substrate (supporter) 12 (Figure 11 A).For support substrate 12
Such as quartz glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms metal film 14 (Figure 11 B).Metal film 14 is set to the substantially entire surface at the back side.
Metal film 14 is the drain electrode of MOSFET.Metal film 14 is the stacked film of such as dissimilar metal.Metal film 14 is
Such as aluminium/titanium/ni au stacked film is stacked gradually from the back side of silicon substrate 10.Metal film 14 be for example, by sputtering method and
It is formed.The film thickness of metal film 14 is such as 0.5 μm or more and 1.0 μm or less.
Next, being placed in the back side of silicon substrate 10 on pallet 36 downward.Silicon substrate 10 only has peripheral portion to be held in the palm
Disk 36 supports.There are gaps between pallet 36 other than the peripheral portion of silicon substrate 10.The metal film 14 of the peripheral portion of silicon substrate 10
Also following layer is able to use with the peripheral portion of pallet 36 and is fixed.Later, support substrate 12 (Figure 11 C) is removed from silicon substrate 10.
Next, along the cutting region for the face side for being set to silicon substrate 10, with the metal film 14 of back side from face side
The mode of exposing is in 10 partial shape grooving 20 (Figure 11 D) of silicon substrate.Herein, so-called cutting region refers to for by cross cutting
Multiple semiconductor elements are divided into the presumptive area with specific width of multiple semiconductor chips, and are set to silicon substrate 10
Face side.Cutting region does not form the pattern of semiconductor element.Cutting region is for example to incite somebody to action half in 10 face side of silicon substrate
The clathrate setting of the mode that conductor element separates.
Slot 20 is formed for example, by plasma etching.Plasma etching is that so-called wave wishes technique, repeats example
As used the isotropic etch step of F system free radical, having used CF4It is the protective film forming step of free radical, using there is F
It is the anisotropic etching of ion.
Preferably slot 20 using the protective film of the face side of silicon substrate 10 as mask, is formed by overall etch.According to
This method can be realized the simplification of manufacturing step and cost effective due to not using lithographic.
Next, from the face side sparging carbon dioxide particle (Figure 11 E) of silicon substrate 10.Pass through sparging carbon dioxide grain
Son, and remove the metal film 14 for being formed with the back side at position of slot 20.Metal film 14 is by carbon dioxide particles physics
Ground is removed (Figure 11 F).
Carbon dioxide particles are the carbon dioxide of solid state.Carbon dioxide particles are so-called dry ice.Titanium dioxide carbon granules
The shape of son is such as graininess, powdered, spherical or indefinite shape.
Carbon dioxide particles are generated and making the heat-insulated expansion of such as liquefied carbon dioxide gas.Generated titanium dioxide
Carbon particle is to spray together with such as nitrogen from nozzle, and blow to metal film 14.The average grain diameter of carbon dioxide particles is ideal
Be 10 μm or more and 200 μm or less.The average grain diameter of carbon dioxide particles is by being shot with such as high speed camera from nozzle
The carbon dioxide particles of injection, and measure the particle length in captured image and find out.
In addition, the point diameter on 14 surface of metal film when carbon dioxide particles are blowed to metal film 14 preferably such as φ
3mm or more and φ 10mm or less.
The divided MOSFET of metal film 14 by removing the back side of slot 20 falls and is kept on pallet 36
(Figure 11 G).
Hereinafter, being illustrated to the functions and effects of the manufacturing method of the device of present embodiment.
As longitudinal type MOSFET, in the case where the back side of silicon substrate 10 is also formed with metal film 14, when cross cutting
Need also to remove the metal film 14 of the back side of cutting region.For example, by piece cutting from face side by semiconductor substrate
10, in the case that metal film 14 removes simultaneously, the metal film 14 of 20 end of slot of cutting region surface side of supporting or opposing is rolled, and it is so-called to generate
Burr.
If generate metal film 14 burr, have the visual examination of such as semiconductor chip it is bad and can not product load
Sorrow.In addition, such as when grafting material by solder engages semiconductor chip with the bottom plate of metal, due to the part of burr
So that adhesion is deteriorated, to there is generation to engage undesirable worry.
In the present embodiment, after forming slot 20 along the cutting region of silicon substrate 10, titanium dioxide is blowed to face side
Carbon particle, and remove the metal film 14 across the part of slot 20.The metal film 14 removed is cut space into 36 side of pallet, from
And it is able to suppress the generation of burr.It can only remove to autoregistration the metal film 14 of slot 20.
The physical impact mainly by carbon dioxide particles is thought in removal across the metal film 14 of the part of slot 20
It generates.Further, it is contemplated that making 14 quickly cooling of metal film by the carbon dioxide particles of low temperature and applying the titanium dioxide of impact metal film 14
The gasification expansive force of carbon, and promote the removal effect of the metal film 14 using physical impact.
In addition, having the end of the back side of slot 20 in the case where forming slot 20 of silicon substrate 10 by piece cutting
Silicon substrate 10 generates the situation of notch (fragment).It in the present embodiment, is the formation that slot 20 is carried out by plasma etching,
Therefore the notch that can prevent the silicon substrate 10 of the end of the back side of slot 20 from generating.
In addition, in the case where forming slot 20 of silicon substrate 10 by piece cutting, what cutting region needed at least to be sliced
Width more than thickness.Thus, for example needing 50 μm or more of cutting region width.
It in the present embodiment, is the formation of slot 20 to be carried out by plasma etching, therefore cutting region can be made
Width narrows.For example, the width of cutting region is such as 10 μm or more and not up to 50 μm, also can further be set as 20 μm with
Under.
In addition, in the present embodiment, mainly removing metal film etc. by the physical impact of carbon dioxide particles.Cause
This, for example, from dry-etching the case where it is different, also can not be by the chemistry of each film even if metal film is the stacked film of dissimilar metal
Difference of property or so and be removed.Therefore, even if being the stacked film of dissimilar metal, shape anomaly also can easily be inhibited
And it is removed.
In addition, especially as in the present embodiment, in the case where forming slot 20 by plasma etching, metal film 14
20 side of slot end bumps difference be less than silicon substrate 10 slot 20 side bumps it is poor.In other words, the slot of metal film 14
The surface roughness of the end of 20 sides is less than the surface roughness of the side of slot 20.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing metal film
Method.
(the 14th embodiment)
The manufacturing method of the device of present embodiment is with the 13rd embodiment the difference lies in that the semiconductor device of manufacture
Not have metal film in the back side of silicon substrate 10 but has resin film.Hereinafter, about duplicate with the 13rd embodiment
Content is omitted and is described.
Hereinafter, being that the use that overleaf side has resin film has the semiconductor memory of silicon (Si) with the device to be manufactured
It is illustrated for situation.
Figure 12 A, Figure 12 B, Figure 12 C, Figure 12 D, Figure 12 E, Figure 12 F, Figure 12 G are the manufactures for indicating the device of present embodiment
The exemplary steps cross-sectional view of method.
Firstly, in the silicon substrate (substrate) for having the 1st face (hereinafter also referred to positive) and the 2nd face (the hereinafter also referred to back side)
10 face side forms memory transistor, peripheral circuit, power electrode, the ground connection electricity of semiconductor memory (semiconductor element)
The pattern of pole, I/O electrode etc..Later, protective film is formed in the top layer of silicon substrate 10.Protective film is such as polyimides
The inorganic insulating membranes such as resin film, silicon nitride film or silicon oxide film.
Next, the face side in silicon substrate 10 is bonded support substrate (supporter) 12 (Figure 12 A).For support substrate 12
Such as quartz glass.
Next, the back side of silicon substrate 10 is removed by grinding, make 10 filming of silicon substrate.Later, in silicon substrate
10 back side forms resin film 30 (Figure 12 B).Resin film 30 is set to the substantially entire surface at the back side.
Resin film 30 is DAF (the Die Attach for making the semiconductor chip after for example dividing be engaged in substrate
Film).The film thickness of resin film 30 is such as 10 μm or more and 200 μm or less.
Next, being placed in the back side of silicon substrate 10 on pallet 36 downward.Silicon substrate 10 only has peripheral portion to be held in the palm
Disk 36 supports.There are gaps between pallet 36 other than the peripheral portion of silicon substrate 10.The resin film 30 of the peripheral portion of silicon substrate 10
Also following layer is able to use with the peripheral portion of pallet 36 and is fixed.Later, support substrate 12 (Figure 12 C) is removed from silicon substrate 10.
Next, along the cutting region for the face side for being set to silicon substrate 10, with the resin film 30 of back side from face side
The mode of exposing is in 10 partial shape grooving 20 (Figure 12 D) of silicon substrate.Herein, so-called cutting region refers to for by cross cutting
The presumptive area with specific width that semiconductor chip is divided, and it is set to the face side of silicon substrate 10.Cutting region is not
Form the pattern of semiconductor element.Cutting region is in such as clathrate setting of 10 face side of silicon substrate.
Slot 20 is to cut and formed for example, by piece.
Next, from the face side sparging carbon dioxide particle (Figure 12 E) of silicon substrate 10.Pass through sparging carbon dioxide grain
Son, and the resin film 30 for the back side for being formed with the position of slot 20 is removed.Resin film 30 is by carbon dioxide particles object
It is removed (Figure 12 F) to reason.
Carbon dioxide particles are the carbon dioxide of solid state.Carbon dioxide particles are so-called dry ice.Titanium dioxide carbon granules
The shape of son is such as graininess, powdered, spherical or indefinite shape.
Carbon dioxide particles are to spray together with such as nitrogen from nozzle, and be blown to resin film 30.Titanium dioxide carbon granules
Preferably 10 μm or more and 200 μm or less of average grain diameter of son.The average grain diameter of carbon dioxide particles is by with for example high
Fast camera shoots the carbon dioxide particles sprayed from nozzle, and measures the particle length in captured image and find out.
In addition, the point diameter on 30 surface of resin film when carbon dioxide particles are blowed to resin film 30 preferably such as φ
3mm or more and φ 10mm or less.
By removing the resin film 30 of the back side of slot 20, segmented semiconductor memory is fallen on pallet 36 and quilt
It keeps (Figure 12 G).
Hereinafter, being illustrated to the functions and effects of the manufacturing method of the device of present embodiment.
For example, as semiconductor memory, for using mobile phone as the semiconductor device of the miniaturized electronics of representative
In, it is the BGA (Ball Grid Array) or MCP (Multi Chip used as small-sized, slim semiconductor packages
Package).In BGA or MCP, other than the routing grafting material for using paste, also engaged using DAF etc. membranaceous routing
Material.
In the case where the resin films such as DAF 30 are formed in the back side of silicon substrate 10, when cross cutting, needs also to remove cutting area
The resin film 30 of the back side in domain.For example, being removed simultaneously being cut by piece from face side by semiconductor substrate 10, resin film 30
In the case where, have resin film 30 from 20 end of slot of cutting region peel off or resin film 30 section and non-linear shape but
The problems such as irregular shape.
In the present embodiment, after forming slot 20 along the cutting region of silicon substrate 10, from positive side to resin film 30
Carbon dioxide particles are blowed, the resin film 30 across the part of slot 20 is removed.The resin film 30 removed is cut into 36 side of pallet
Space, so as to inhibit the generation of burr.In addition, the section of resin film 30 is linear.
The physical impact mainly by carbon dioxide particles is thought in removal across the resin film 30 of the part of slot 20
It generates.Further, it is contemplated that carrying out quickly cooling to resin film 30 by the carbon dioxide particles using low temperature and applying impact resin film 30
The gasification expansive force of carbon dioxide, and promote the removal effect of the resin film 30 using physical impact.
More than, according to the present embodiment, it is capable of providing the manufacture that can inhibit the device of shape anomaly when processing resin film
Method.
(the 15th embodiment)
The manufacturing method of the device of present embodiment be except using pressure (hydraulic) water (water spray) instead of in addition to carbon dioxide particles, with
13rd embodiment is identical.Hereinafter, about with the 13rd duplicate content of embodiment, omit describe.
In the present embodiment, pressure (hydraulic) water is sprayed from the positive side of silicon substrate 10 to metal film 14.By spraying pressure (hydraulic) water,
Remove the metal film 14 of the back side of slot 20.Metal film 14 is physically removed by pressure (hydraulic) water.The processing is so-called
Water spray processing.
More than, according to the present embodiment, also it is capable of providing the system that can inhibit the device of shape anomaly when processing metal film
Make method.
(the 16th embodiment)
The manufacturing method of the device of present embodiment in addition to use the pressure (hydraulic) water containing abrasive grains replace carbon dioxide particles other than,
It is identical as the 13rd embodiment.Hereinafter, about with the 13rd duplicate content of embodiment, omit describe.
In the present embodiment, the pressure (hydraulic) water containing abrasive grains is sprayed from the positive side of silicon substrate 10 to metal film 14.Pass through
The pressure (hydraulic) water containing abrasive grains is sprayed, and removes the metal film 14 of the back side of slot 20.Metal film 14 is by adding containing abrasive grains
It presses water and is physically removed.The processing is so-called abrasive jet machining.
Abrasive grains are such as aluminium oxide particles, carborundum particle, silicon oxide particle.
More than, according to the present embodiment, also it is capable of providing the system that can inhibit the device of shape anomaly when processing metal film
Make method.
It is to be illustrated in case where forming slot by plasma etching, but also can in the 13rd embodiment
Slot is enough formed by piece cutting or laser die cutting.In addition, being to form slot by piece cutting in the 14th embodiment
It is illustrated for situation, but also can form slot by plasma etching or laser die cutting.
In addition, being the case where forming slot in such a way that metal film or resin film expose in the 13rd to the 16th embodiment
For be illustrated, but also can form slot in a manner of residual fraction substrate.In the case, by injecting substances, and incite somebody to action
The substrate of remaining groove portion removes simultaneously with metal film or resin film.
[embodiment]
Hereinafter, recording embodiment.
(embodiment 1)
Multiple semiconductor elements are formed with to front, the back side is formed with the silicon substrate of metal film and is die cut.Using with the 1st
The identical method of embodiment.Firstly, being etched to metal by plasma etching (wave wishes technique) from the face side of silicon substrate
Until film exposes, slot is formed.Later, carbon dioxide particles are blowed from back side side to metallic film surface, by the gold of the back side of slot
Belong to film removal.
The average grain diameter of carbon dioxide particles is set as 10 μm or more and 200 μm or less.Carbon dioxide particles are blown to metal film
The point diameter of metallic film surface when sending is φ 3mm.
Figure 13 A, 13B, 13C, 14A, 14B are the SEM photographs after the cross cutting of embodiment, after Figure 15 is the cross cutting of embodiment
Optical microscope photograph.Figure 15 is to shoot resulting photo from metal film side.
In particular, not observing the shape rolled such as metal film in the end of slot as being illustrated Figure 13 A, 13B, 13C
Abnormal (burr).In addition, in particular, as being illustrated Figure 13 C, the silicon of the end of metal film than the boundary of silicon substrate and metal film
End and more be located at slot opposite side.Surface of the end of metal film from the boundary of silicon substrate and metal film towards metal film, to
Direction far from slot tilts.Inclination flattens slow with towards metallic film surface.
In addition, the bumps of the end of metal film are smaller in particular, as being illustrated Figure 15, processed by straight line.Metal film to
The overhang of slot side is controlled as not up to the half of the width of slot.In addition, in particular, as that is illustrated in Figure 14 A, Figure 14 B, Figure 15
Sample, the surface in metal film and recess portion or the scratch etc. that have no impact due to carbon dioxide particles.
In particular, being observed in the side of the slot of silicon substrate as being illustrated Figure 13 A, 13B, 13C and wishing technique due to wave
Wavy bumps.Therefore, the bumps for the side that the bumps difference of the end of the slot side of metal film is less than slot are poor.
(embodiment 2)
Multiple semiconductor elements are formed with to front, the back side is formed with the silicon substrate of metal film and is die cut.Firstly, from silicon
Until the face side of substrate is etched to metal film exposing by plasma etching (wave wishes technique), slot is formed.Later, from the back side
Lateral metallic film surface blows pressure (hydraulic) water, and the metal film of the back side of slot is removed.
Figure 16 A, 16B, 16C are the SEM photographs after the cross cutting of embodiment 2.Figure 16 C is to shoot resulting photograph from metal film side
Piece.
Similarly to Example 1, the metal membrane-coating removal of groove portion, and do not observe as metal film is rolled in the end of slot
Shape anomaly (burr).As being illustrated Figure 16 B, the end of metal film than the boundary of silicon substrate and metal film silicon end more
Positioned at slot side.In addition, the surface of metal film is the shape extended along slot side.
In addition, especially as being illustrated Figure 16 C, the bumps of the end of metal film are larger, and also observe metal film to
The overhang of slot side is the part of more than half of the width of slot.
(embodiment 3)
Multiple semiconductor elements are formed with to front, the back side is formed with the silicon substrate of metal film and is die cut.Firstly, from silicon
Until the face side of substrate is etched to metal film exposing by plasma etching (wave wishes technique), slot is formed.Later, from back side
The pressure (hydraulic) water containing abrasive grains is blowed to metallic film surface, the metal film of the back side of slot is removed.Metal film is by so-called
Abrasive jet machining and remove.
Figure 17 is the optical microscope photograph after the cross cutting of embodiment 3.Figure 17 is to shoot resulting photo from metal film side.
Similarly to Example 1, the metal membrane-coating removal of groove portion, and do not observe as metal film is rolled in the end of slot
Shape anomaly (burr).The scratch due to abrasive grains is observed on the surface of metal film.
(comparative example 1)
Multiple semiconductor elements are formed with to front, the back side is formed with the silicon substrate of metal film and is die cut.It is cut by piece
It cuts and by silicon substrate, metal film while being removed from face side.
Figure 18 A, 18B, 18C are the SEM photographs after the cross cutting of comparative example 1.Figure 18 C is the part surrounded in Figure 18 B with circle
Enlarged drawing.
As being illustrated Figure 18 A, 18B, 18C, the shape anomaly (hair rolled such as metal film in the end of slot is observed
Thorn).In addition, as shown in Figure 18 A, the fragment of silicon is observed near the boundary of silicon substrate and metal film.
(comparative example 2)
Multiple semiconductor elements are formed with to front, the back side is formed with the silicon substrate of metal film and is die cut.Pass through laser
It is die cut and is removed simultaneously from face side by silicon substrate, metal film.
Figure 19 A, 19B, 19C are the SEM photographs after the cross cutting of comparative example 2.Figure 19 C is to shoot resulting photograph from metal film side
Piece.
Confirmation is shown in the slot side of silicon substrate and the end of metal film, the structure that surface is melted by the energy of laser
It makes.
According to Examples 1 to 3 compared with Comparative Examples 1 and 2, in particular according to embodiment, confirmation is able to suppress the shapes such as burr
It is abnormal.In addition, especially in embodiment 1, confirmation is also able to suppress damage, scratch of metallic film surface etc..In addition, especially in reality
It applies in example 1, the bumps for specifying the end of metal film are smaller, processed by straight line.
In addition, being using semiconductor element as longitudinal type MOSFET, semiconductor memory in the 1st to the 16th embodiment
It is illustrated for situation, but semiconductor element is not limited to longitudinal type MOSFET, semiconductor memory.
In the 1st to the 16th embodiment, for being said in case where manufacturing MOSFET, semiconductor memory
It is bright, but the present invention also can be used in manufacturing IGBT (Insulated Gate Bipolar Transistor), small signal system dress
It sets, MEMS (Micro Electro Mechanical Systems).
In addition, being to be illustrated by taking semiconductor substrate as an example, but also can as substrate in the 1st to the 16th embodiment
Enough apply the present invention to the substrate other than semiconductor substrate, other linings such as ceramic substrate, glass substrate, Sapphire Substrate
Bottom.
In addition, in the 1st to the 16th embodiment, to be to the case where metal film or resin film sparging carbon dioxide particle
An example and be illustrated, but can also gasify in solid, the atmosphere locating for the substrates such as room temperature using when being sprayed from nozzle
Other particles.For example, can also apply nitrogen particle or argon particle.
In addition, as the film for being formed in the 2nd surface side, being to be with metal film and resin film in the 1st to the 16th embodiment
Example is illustrated, but also can be using other films such as the inorganic insulating membranes such as nitride film or oxidation film.
Though several embodiments of the invention are illustrated, the multiple embodiment is mentioned as example
Show, it is not intended to limit the range of invention.The multiple novel embodiment can be implemented in various other forms, and not
It is detached from the range of inventive concept, is able to carry out various omissions, displacement, change.The multiple embodiment or its variation include
In invention scope and purport, and it is contained in the invention described in the claims and its equivalency range.
Claims (13)
1. a kind of manufacturing method of device, it is characterised in that: formed in the 2nd surface side with the 1st face and the substrate in the 2nd face
Film,
It is formed locally slot in the substrate in a manner of keeping the film remaining from the 1st surface side of the substrate,
And carbonated particle will be wrapped to the film in the point on the surface of the film from the 2nd surface side of the substrate
Diameter becomes the above φ 10mm mode below of φ 3mm and sprays, and removal is formed with the described of the 2nd surface side at the position of the slot
Film,
When removing the film, the end of the slot side of the film is less than the slot relative to the inclination angle in the 2nd face
Inclination angle of the side relative to the 2nd face.
2. the manufacturing method according to claim 1, it is characterised in that the film is metal film or resin film.
3. the manufacturing method according to claim 1, it is characterised in that be so that the film exposes when forming the slot
Mode forms the slot.
4. the manufacturing method according to claim 1, it is characterised in that the substrate is semiconductor substrate.
5. the manufacturing method according to claim 1, it is characterised in that: be to pass through plasma etching when forming the slot
And form the slot.
6. the manufacturing method according to claim 1, it is characterised in that: be to cut shape by piece when forming the slot
At the slot.
7. the manufacturing method according to claim 1, it is characterised in that: before forming the film, remove the substrate
2nd surface side, and make the thin substrates membranization.
8. the manufacturing method according to claim 1, it is characterised in that: after forming the slot, before removing the film, into one
Step attaches resin sheet in the 1st surface side, and when removing the film, by the resin sheet with mask is covered and sprays institute
State the carbonated particle of packet.
9. a kind of manufacturing method of device, it is characterised in that: from the 1st surface side of the substrate with the 1st face and the 2nd face,
The substrate is formed locally slot,
In a manner of keeping the substrate of the 2nd surface side at the position for being formed with the slot remaining, the institute of the substrate is removed
The 2nd surface side is stated,
Film is formed in the 2nd surface side,
Point diameter of the carbonated particle on the surface of the film will be wrapped to the film from the 2nd surface side becomes φ 3mm
The above φ 10mm mode below is sprayed, and in a manner of exposing the slot, removal is formed with the described 2nd of the position of the slot
The film of surface side and be formed with the slot position the 2nd surface side the substrate.
10. manufacturing method according to claim 9, it is characterised in that the film is metal film or resin film.
11. a kind of manufacturing method of device, it is characterised in that: in the 2nd surface side shape with the 1st face and the substrate in the 2nd face
Film forming,
It is formed locally slot in the substrate in a manner of keeping the film remaining from the 1st surface side,
Become the above φ of φ 3mm from the 1st surface side point diameter of the carbonated particle on the surface of the film will be wrapped
10mm mode below is sprayed, and removal is formed with the film of the 2nd surface side at the position of the slot.
12. manufacturing method according to claim 11, it is characterised in that the film is metal film or resin film.
13. manufacturing method according to claim 11, it is characterised in that be so that the film exposes when forming the slot
Mode form the slot.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014231874A JP2016096265A (en) | 2014-11-14 | 2014-11-14 | Manufacturing method of device |
| JP2014-231875 | 2014-11-14 | ||
| JP2014-231874 | 2014-11-14 | ||
| JP2014231875A JP6325421B2 (en) | 2014-11-14 | 2014-11-14 | Device manufacturing method |
| JP2015-014569 | 2015-01-28 | ||
| JP2015014569A JP6370720B2 (en) | 2014-11-14 | 2015-01-28 | Device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
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| CN105609555A CN105609555A (en) | 2016-05-25 |
| CN105609555B true CN105609555B (en) | 2019-06-14 |
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| CN201510553408.6A Active CN105609555B (en) | 2014-11-14 | 2015-09-02 | The manufacturing method of device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1881561A (en) * | 2005-06-14 | 2006-12-20 | 探微科技股份有限公司 | Wafer cutting method |
| CN101530011A (en) * | 2006-11-30 | 2009-09-09 | 株式会社德山 | Method for manufacturing metallized ceramic substrate chip |
| CN101978478A (en) * | 2008-03-25 | 2011-02-16 | 松下电器产业株式会社 | Method for processing a substrate, method for manufacturing a semiconductor chip, and method for manufacturing a semiconductor chip having a resin adhesive layer |
| US8399281B1 (en) * | 2011-08-31 | 2013-03-19 | Alta Devices, Inc. | Two beam backside laser dicing of semiconductor films |
| TW201421576A (en) * | 2012-09-28 | 2014-06-01 | Plasma Therm Llc | Method for dicing a substrate with back metal |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4856328B2 (en) * | 2001-07-13 | 2012-01-18 | ローム株式会社 | Manufacturing method of semiconductor device |
| TWI267133B (en) * | 2005-06-03 | 2006-11-21 | Touch Micro System Tech | Method of segmenting a wafer |
| JP2008135446A (en) * | 2006-11-27 | 2008-06-12 | Philtech Inc | Method of producing rf powder |
| DE102012111358A1 (en) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Method for separating a composite into semiconductor chips and semiconductor chip |
| KR20160057966A (en) * | 2014-11-14 | 2016-05-24 | 가부시끼가이샤 도시바 | Processing apparatus, nozzle and dicing apparatus |
-
2015
- 2015-09-02 CN CN201510553408.6A patent/CN105609555B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1881561A (en) * | 2005-06-14 | 2006-12-20 | 探微科技股份有限公司 | Wafer cutting method |
| CN101530011A (en) * | 2006-11-30 | 2009-09-09 | 株式会社德山 | Method for manufacturing metallized ceramic substrate chip |
| CN101978478A (en) * | 2008-03-25 | 2011-02-16 | 松下电器产业株式会社 | Method for processing a substrate, method for manufacturing a semiconductor chip, and method for manufacturing a semiconductor chip having a resin adhesive layer |
| US8399281B1 (en) * | 2011-08-31 | 2013-03-19 | Alta Devices, Inc. | Two beam backside laser dicing of semiconductor films |
| TW201421576A (en) * | 2012-09-28 | 2014-06-01 | Plasma Therm Llc | Method for dicing a substrate with back metal |
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