KR20160054877A - Light emitting device - Google Patents

Abstract

According to an embodiment of the present invention, disclosed is a light emitting device, comprising: a light emitting structure including a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer; a first electrode layer arranged under the second semiconductor layer; a second electrode layer arranged under the second semiconductor layer and electrically coupled to the first semiconductor layer; a first insulation layer arranged between the first and second electrode layers; and a third electrode layer coupled to the first electrode layer and spaced apart from the second electrode layer under the first electrode layer; and a second insulation layer arranged between the second electrode layer and the third electrode layer. According to the present invention, provided is a light emitting device capable of effectively dividing a boundary between a cathode and an anode.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a light emitting device package, and a light unit.

Light emitting diodes (LEDs) are widely used as light emitting devices. Light emitting diodes convert electrical signals into light, such as infrared, visible, and ultraviolet, using the properties of compound semiconductors.

As the light efficiency of a light emitting device is increased, a light emitting device is applied to various fields including a display device and a lighting device.

A light emitting device having a plurality of electrode layers under a light emitting structure according to an embodiment is provided.

Embodiments provide a light emitting device that is spaced below the light emitting structure and stacked with the same metal layer.

The embodiment provides a light emitting element capable of effectively separating the boundary between the cathode and the anode of the light emitting element.

A light emitting device according to an embodiment includes: a light emitting structure including a first semiconductor layer, an active layer below the first semiconductor layer, and a second semiconductor layer below the active layer; A first electrode layer disposed below the second semiconductor layer; A second electrode layer disposed under the second semiconductor layer and electrically connected to the first semiconductor layer; A first insulating layer disposed between the first and second electrode layers; A third electrode layer connected to the first electrode layer and spaced apart from the second electrode layer below the first electrode layer; And a second insulating layer disposed between the second electrode layer and the third electrode layer.

The heat dissipation efficiency can be improved by bonding through the plurality of conductive supporting members under the light emitting structure according to the embodiment.

The embodiment has the effect of facilitating the separation of the cathode and the anode of the light emitting device by bonding through a plurality of supporting members having conductivity below the light emitting structure.

The embodiment provides a light emitting element capable of effectively separating the boundary between the cathode and the anode of the light emitting element.

1 is a side sectional view showing a light emitting device according to a first embodiment.
2 is a bottom view of the light emitting device of FIG.
3 to 15 are views illustrating a manufacturing process of the light emitting device of FIG.
16 is a side sectional view showing a light emitting device according to the second embodiment.
17 is a side sectional view showing a light emitting device according to the third embodiment.
FIG. 18 is a view showing a light emitting device package having the light emitting device of FIG. 1;

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

Hereinafter, a light emitting device according to embodiments will be described in detail with reference to the accompanying drawings.

FIG. 1 is a side sectional view of a light emitting device according to an embodiment, and FIG. 2 is an example of a bottom view of the light emitting device of FIG.

1 and 2, the light emitting device 100 includes a light emitting structure 10 having a plurality of semiconductor layers 11, 12 and 13, a first electrode layer 81 under the light emitting structure 10, A second electrode layer 83 under the first electrode layer 81, a first insulating layer 41 between the first and second electrode layers 81 and 83, and a first electrode layer 81 connected to the first electrode layer 81, A third electrode layer 85 adjacent to the insulating layer 41 and the second electrode layer 83 and a second insulating layer 85 disposed in the hole 46A between the second electrode layer 83 and the third electrode layer 85. [ (46).

The light emitting structure 10 may include a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13. The active layer 12 may be disposed between the first semiconductor layer 11 and the second semiconductor layer 13. The active layer 12 may be disposed under the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed under the active layer 12. [

For example, the first semiconductor layer 11 may include an n-type semiconductor layer doped with a first conductive dopant such as an n-type dopant, and the second semiconductor layer 13 may include a second conductive dopant such as p And a p-type semiconductor layer to which a dopant is added. Conversely, the first semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 may be formed of an n-type semiconductor layer.

The first semiconductor layer 11 may include, for example, an n-type semiconductor layer. The first semiconductor layer 11 may be formed of a compound semiconductor. The first semiconductor layer 11 may be formed of at least one of a Group II-VI compound semiconductor and a Group III-V compound semiconductor, for example.

For example, the first semiconductor layer 11 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + . The first semiconductor layer 11 may be selected from among GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, An n-type dopant such as Te can be doped.

The active layer 12 is formed in such a manner that electrons (or holes) injected through the first semiconductor layer 11 and holes (or electrons) injected through the second semiconductor layer 13 meet with each other, The light emitting layer is a layer that emits light due to a band gap difference of an energy band according to a forming material of the light emitting layer. The active layer 12 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure and a quantum wire structure, but is not limited thereto.

The active layer 12 may be formed of a compound semiconductor. The active layer 12 may be formed of at least one of Group II-VI and Group III-V compound semiconductors. The active layer 12 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? When the active layer 12 is implemented in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer, An InGaN well layer / AlGaN barrier layer, an InAlGaN well layer / InAlGaN barrier layer, or a GaN well layer / AlGaN barrier layer.

The second semiconductor layer 13 may be formed of, for example, a p-type semiconductor layer. The second semiconductor layer 13 may be formed of a compound semiconductor. The second semiconductor layer 13 may be formed of at least one of a Group II-VI compound semiconductor and a Group III-V compound semiconductor, for example.

For example, the second semiconductor layer 13 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + . The second semiconductor layer 13 may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, A p-type dopant such as Ba can be doped.

Meanwhile, the first semiconductor layer 11 may include a p-type semiconductor layer and the second semiconductor layer 13 may include an n-type semiconductor layer. In addition, a semiconductor layer including an n-type or p-type semiconductor layer having a conductivity type different from that of the second semiconductor layer 13 may be further formed under the second semiconductor layer 13. Accordingly, the light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. The doping concentration of impurities in the first semiconductor layer 11 and the second semiconductor layer 13 may be uniform or non-uniform. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

In addition, between the first semiconductor layer 11 and the active layer 12 or between the second semiconductor layer 13 and the active layer 12, for example, AlGaN / GaN superlattice Structure, an InGaN / GaN superlattice structure, or an InGaN / InGaN superlattice structure may be disposed. An AlGaN layer doped with a second conductive dopant may be interposed between the second semiconductor layer 13 and the active layer 12.

The upper surface of the first semiconductor layer 11 may be formed of a rough irregular portion 11A and the irregular surface 11A may improve the light extraction efficiency.

The first semiconductor layer (11) includes a protrusion (16). A plurality of the protrusions 16 are disposed apart from each other. The upper surface of the protrusion 16 may be formed as a rough surface 11A, but is not limited thereto. The protrusion 16 may be a first conductive semiconductor layer or an undoped semiconductor layer disposed separately on the first semiconductor layer 11, but the present invention is not limited thereto.

The first electrode layer 81 is disposed between the light emitting structure 10 and the second electrode layer 83 and is electrically connected to the second semiconductor layer 13 and electrically connected to the second electrode layer 83. [ Is insulated. The first electrode layer 81 includes a first contact layer 15, a reflective layer 17 and a first capping layer 35. The first contact layer 15 is formed on the reflective layer 17, Layer 13 and the reflective layer 17 is disposed between the first contact layer 15 and the first capping layer 35. The first contact layer 15, the reflective layer 17, and the first capping layer 35 may be formed of different conductive materials, but the present invention is not limited thereto.

The first contact layer 15 is in contact with the lower surface of the second semiconductor layer 13 and may be in ohmic contact with the lower surface of the second semiconductor layer 13, for example. The first contact layer 15 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. The first contact layer 15 may be formed of, for example, indium tin oxide (ITO), ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc nitride), AZO (aluminum zinc oxide) ), IZTO (Indium Zinc Tin Oxide), IZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide) IZO nitride, ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

The reflective layer 17 may be electrically connected to the first contact layer 15 and the first capping layer 35. The reflective layer 17 may be arranged to have a width wider than the width of the first contact layer 15. The reflective layer 17 may reflect light incident from the light emitting structure 10 and increase the amount of light extracted to the outside.

The reflective layer 17 may be formed of a metal having a light reflectance of 70% or more. For example, the reflective layer 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The reflective layer 17 may be formed of one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin- oxide (IZTO) A transparent conductive material such as indium-gallium-oxide (IGZO), indium-gallium-zinc-oxide (IGTO), aluminum-zinc oxide And may be formed in multiple layers. For example, in an embodiment, the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. For example, the reflective layer 17 may include an Ag layer and an Ni layer alternately or may include a Ni / Ag / Ni layer, a Ti layer, and a Pt layer. As another example, the first contact layer 15 may be disposed below the reflective layer 17, and at least a portion of the first contact layer 15 may be in contact with the second semiconductor layer 13 through the reflective layer 17. As another example, the reflective layer 17 may be disposed under the first contact layer 15, and a portion may contact the second semiconductor layer 13 through the first contact layer 15 .

The light emitting device 100 according to the embodiment may include a capping layer 35 disposed under the reflective layer 17. The first capping layer 35 is disposed between the reflective layer 17 and the first insulating layer 41. The first capping layer 35 may be connected to a lower surface of the reflective layer 17 and the third electrode layer 85. The first capping layer 35 functions as a wiring layer for transmitting power. The first capping layer 35 may include at least one of Au, Cu, Ni, Ti, Ti, W, Cr, W, Pt, V, Fe and Mo.

The outer side of the first capping layer 35 may extend below the outer protective layer 30 and the outer side may be exposed to the outside.

The protective layer 30 is disposed on the lower surface of the light emitting structure 10 and can be in contact with the lower surface of the second semiconductor layer 13 and the first contact layer 15, .

The inner portion of the passivation layer 30, which overlaps with the light emitting structure 10 in the vertical direction, may be vertically overlapped with the region of the protrusion 16. The outer side of the protective layer 30 may extend over the first capping layer 35 to separate a distance between the first capping layer 35 and the side walls of the light emitting structure 10, 10 can be prevented from penetrating moisture and can be protected from impact transmitted to the chip during the etching process.

The inner side of the passivation layer 30 may be disposed between the light emitting structure 10 and the first electrode layer 81 and the outer side may be disposed between the light transmitting layer 95 and the first capping layer 35 . Also, the protective layer 30 can function as an etching stopper during the isolation process for the individual light emitting structure 10, and the electrical characteristics of the light emitting device can be prevented from being degraded by the isolation process.

The protective layer 30 may be defined as a channel layer, a low refractive index material, or a channel layer. The protective layer 30 may be formed of an insulating material, for example, an oxide or a nitride. For example, the protective layer 30 may include at least one of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed. The protective layer 30 may be formed of a transparent material.

The light emitting device 100 according to the embodiment may include a first insulating layer 41 for electrically insulating the first electrode layer 81 and the second electrode layer 83 from each other. The first insulating layer 41 may be disposed between the first electrode layer 81 and the second electrode layer 83. A part of the first insulating layer 41 may be in contact with the protective layer 30 and may be arranged to overlap with the protrusions 16 in the vertical direction.

The first insulating layer 41 may be formed of, for example, an oxide or a nitride. For example, the first insulating layer 41 may be formed of a material selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , At least one of which may be selected and formed.

The first insulating layer 41 may be formed to a thickness of 100 nanometers to 2000 nanometers, for example. If the thickness of the first insulating layer 41 is less than 100 nanometers, a problem may arise in the insulating characteristics. If the thickness of the first insulating layer 41 is more than 2000 nanometers, Cracking may occur in the process step. The first insulating layer 41 is in contact with the lower surface of the first electrode layer 81 and the upper surface of the second electrode layer 83 and is in contact with the protective layer 30, the first capping layer 35, Layer 15, and reflective layer 17, respectively.

A second electrode layer 83 is disposed under the first region of the first electrode layer 81 and a third electrode layer 85 is disposed under the second region. The bottom width or bottom area of the second electrode layer 83 and the third electrode layer 85 may be the same or different from each other. 2, the bottom width D1 or the area of the second electrode layer 83 may be greater than the bottom width D2 of the third electrode layer 85 or the area thereof.

Each of the second electrode layer 83 and the third electrode layer 85 may include a plurality of metal layers, and at least two or more layers of the plurality of metal layers may be formed of the same metal material. The number of the metal layers of the second electrode layer 83 may be equal to or less than the number of the metal layers of the third electrode layer 85.

The second electrode layer 83 and the third electrode layer 85 may function as a cathode terminal and an anode terminal in the lower portion of the light emitting device 100. The second and third electrode layers 83 and 85 may function as a plurality of heat radiating plates below the light emitting structure 10. Each of the second and third electrode layers 83 and 85 may include support members 70 and 75 to effectively support the light emitting device 100.

The second electrode layer 83 includes a first diffusion barrier layer 50 disposed under the first insulation layer 41, a first bonding layer 60 disposed under the first diffusion barrier layer 50, 1 bonding layer 60 and may be electrically connected to the first semiconductor layer 11. The first semiconductor layer 11 may include a first supporting member 70 disposed under the bonding layer 60, The second electrode layer 83 may selectively include one or two of the first diffusion preventing layer 50, the first bonding layer 60, and the first supporting member 70, 1 diffusion preventing layer 50 or the first bonding layer 60 may not be formed. 2, the bottom width D1 of the first supporting member 70 may be equal to the width of the first diffusion preventing layer 50 and the first bonding layer 60, but the present invention is not limited thereto.

The first diffusion barrier layer 50 may include at least one of Cu, Ni, Ti, Ti, W, Cr, W, Pt, V, Fe and Mo. The first diffusion barrier layer 50 may function as a diffusion barrier layer between the first insulation layer 41 and the first bonding layer 60. The first diffusion preventing layer 50 may be electrically connected to the first bonding layer 60 and the first supporting member 70 and may be electrically connected to the first semiconductor layer 11.

The first diffusion barrier layer 50 prevents diffusion of a material contained in the first bonding layer 60 toward the reflective layer 17 in the process of providing the first bonding layer 60 can do. The first diffusion barrier layer 50 may prevent a material such as tin contained in the first bonding layer 60 from affecting the reflective layer 17.

The first bonding layer 60 may include a barrier metal or a bonding metal and may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, One can be included. The first support member 70 supports the light emitting structure 10 according to the embodiment and can perform a heat dissipation function. The first bonding layer 60 may include a seed layer.

The first supporting member 70 may be formed of a metal or a carrier substrate such as Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- Ge, GaN, GaAs, ZnO, SiC, SiGe, and the like). The first supporting member 70 is a layer for supporting the light emitting device 100. The thickness of the first supporting member 70 may be 80% or more of the thickness of the second electrode layer 83 and 30 mu m or more.

On the other hand, the second contact layer 33 is disposed inside the first semiconductor layer 11 and is in contact with the inner surface of the first semiconductor layer 11. The upper surface of the second contact layer 33 may be positioned higher than the lower surface of the first semiconductor layer 11 and lower than the upper surface of the first semiconductor layer 11. [ The second contact layer 33 is electrically connected to the first semiconductor layer 11 and is insulated from the active layer 12 and the second semiconductor layer 13.

The second contact layer 33 may be electrically connected to the second electrode layer 83. The second contact layer 33 may be disposed through the first electrode layer 81, the active layer 12, and the second semiconductor layer 15. The second contact layer 33 is disposed in a recess 2 disposed in the light emitting structure 10 and is electrically connected to the active layer 12 and the second semiconductor layer 15 by a protective layer 30. [ . A plurality of the second contact layers 33 may be spaced apart from each other to distribute current. Each of the plurality of second contact layers 33 may be disposed so as to be vertically overlapped with each of the protrusions 16, but the present invention is not limited thereto.

The second contact layer 33 may be connected to at least one of the protrusions 51 and 61 of the second electrode layer 83. The protrusions 51 and 61 may be connected to the protrusions 51 and a protrusion 61 protruding from the first bonding layer 60. The protrusions 51 and 61 penetrate through the holes 41A disposed in the first insulating layer 41 and the protective layer 30 and can be insulated from the first electrode layer 81. [

The second contact layer 33 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo. The protrusions 51 and 61 may include at least one of the first diffusion barrier layer 50 and the first bonding layer 60, but the present invention is not limited thereto. For example, the projections 51 and 61 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd or Ta.

The third electrode layer 85 may be disposed under the outer region of the light emitting structure 10. That is, the third electrode layer 85 may be disposed in an edge region rather than a center region of the light emitting structure 10. The third electrode layer 85 includes a second capping layer 45, a second diffusion barrier layer 55, a second bonding layer 65, and a second support member 75.

The second capping layer 45 is disposed between the first capping layer 35 and the second diffusion preventing layer 55 and electrically connects the capping layer 35 and the second diffusion preventing layer 55. The second capping layer 45 functions as a wiring layer together with the first capping layer 35. The second capping layer 45 may be in contact with the first capping layer 35, the second insulating layer 46, and the second diffusion preventing layer 55.

The second capping layer 45 may include at least one of Au, Cu, Ni, Ti, Ti, W, Cr, W, Pt, V, Fe and Mo.

The second diffusion barrier layer 55 may be formed of the same metal as the first diffusion barrier layer 50. The second diffusion preventing layer 55 may have the same thickness as the first diffusion preventing layer 50. The second diffusion barrier layer 55 may include at least one of Cu, Ni, Ti, W, Cr, W, Pt, V, Fe and Mo.

The second bonding layer 65 may be disposed of the same metal as the first bonding layer 60. The second bonding layer 65 may have a thickness equal to the thickness of the first bonding layer 60. The second bonding layer 65 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd or Ta.

The second support member 75 may include the same metal or the same semiconductor substrate as the metal constituting the first support member 70. The second support member 75 may include a metal or another semiconductor substrate different from the first support member 70, but is not limited thereto. The second support member 75 may have a thickness equal to the thickness of the first support member 70. 2, the width D2 of the second support member 75 may be equal to the width of the second diffusion preventing layer 55 and the second bonding layer 65. [ The lower surfaces of the first and second support members 70 and 75 can be arranged in the same horizontal plane so that the bonding process and the bonding efficiency can be prevented from being lowered when bonding the substrate or the package.

A hole 46A is formed between the second and third electrode layers 83 and 85 and the hole 46A extends from the lower surface of the second support member 75 or the first support member 70 to the first To the bottom surface of the capping layer 35. The hole 46A may have the same length as the length D3 of the first or second supporting member 70 or 75 as shown in FIG.

The hole 46A is disposed in a region between the third electrode layer 85 and the first insulating layer 41 and the second electrode layer 83. [ The hole 46A allows the second and third electrode layers 83 and 85 to be spaced apart from each other to electrically insulate the second and third electrode layers 83 and 85 from each other. A second insulating layer 46 is disposed in the hole 46A. The second insulating layer 46 may be disposed in a region between the first insulating layer 41 and the first, second, and third electrode layers 81, 83, and 85. The second insulating layer 46 may be in contact with the first capping layer 35 and the first insulating layer 41. The second insulating layer 46 may be disposed under the lower surface of the first capping layer 35, for example, between the lower surface of the first capping layer 35 and the upper surface of the first supporting member 70. The second insulating layer 46 may be in contact with the first and second diffusion preventing layers 50 and 55, and the first and second bonding layers 60 and 65. The second insulating layer 46 may not contact the first and second supporting members 70 and 75, and the present invention is not limited thereto.

The second insulating layer 46 is an etching stop layer and can block penetration of the laser when forming the hole 56 between the first and second supporting members 70 and 75 . The second insulating layer 46 includes a structure in which two or more layers having different refractive indexes are alternately stacked. The second insulating layer 46 includes a DBR (Distributed Bragg Reflector) structure for reflecting the laser. The second insulating layer 46 includes at least two layers of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , and AlN.

The holes 56 extending between the first and second support members 70 and 75 of the holes 46A may be void regions, but are not limited thereto.

(Not shown) underneath the first support member 70 and a conductive second adhesive layer (not shown) below the second support member 75. The first and second support members 75, The first and second adhesive layers may include at least one of Au and Sn, and may include a solder material such as AuSn or a conductive paste material.

The light-transmitting layer 95 protects the surface of the light-emitting structure 10 and can be in contact with the outer side of the protective layer 30. The light-transmitting layer 95 has a lower refractive index than the material of the semiconductor layer constituting the light-emitting structure 10, and can improve the light extraction efficiency. The light-transmitting layer 95 may be formed of, for example, an oxide or a nitride. For example, the light-transmitting layer 95 may include at least one of the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed. Meanwhile, the light-transmitting layer 95 may be omitted according to design. According to the embodiment, the light emitting structure 10 may be driven by the first electrode layer 81 and the second electrode layer 83.

That is, the light emitting device according to the embodiment may include a plurality of light emitting structures that can be individually driven in one device. In the embodiment, two light emitting structures are disposed in one light emitting device. However, three or four or more light emitting structures may be electrically connected to one light emitting device, . The light emitting element having such a structure can be usefully applied to a lighting device of a vehicle, for example, a headlight or a tail lamp as an example.

In addition, a phosphor layer (not shown) may be provided on the light emitting structure 10, and the phosphor layer may be formed to have a uniform thickness through a conformal coating, for example. . The light emitting device according to the embodiment may further include an optical lens on the light emitting structure 10, but the present invention is not limited thereto.

A method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 3 to 15. FIG.

Referring to FIG. 3, a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13 may be formed on a substrate 5. The first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13 may be defined as a light emitting structure 10.

The substrate 5 may include at least one of a conductive, an insulating, a transparent material, and a non-transparent material. For example, at least one of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

The semiconductor layer grown on the substrate 5 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) A molecular beam epitaxy (MBE) method, a hydride vapor phase epitaxy (HVPE) method, and the like. However, the present invention is not limited thereto.

A buffer layer or a semiconductor layer such as an undoped semiconductor layer may be further formed between the first semiconductor layer 11 and the substrate 5. Wherein the first semiconductor layer (11) is formed of an n-type semiconductor layer doped with an n-type dopant as a first conductive dopant and the second semiconductor layer (13) is doped with a p-type dopant as a second conductive dopant and may be formed of a p-type semiconductor layer. Conversely, the first semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 may be formed of an n-type semiconductor layer. The first semiconductor layer 11 may include a laminated structure of an undoped semiconductor layer and a first conductive semiconductor layer, but the present invention is not limited thereto.

The active layer 12 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0? _Y? 1, 0? _X + y? When the active layer 12 is formed in the multi-well structure, the active layer 12 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the active layer 12 may be formed by a periodic structure of an InGaN well layer / GaN barrier layer .

The light emitting structure 10 may have at least one of np, pn, npn, and pnp junction structures. The doping concentration of impurities in the first semiconductor layer 11 and the second semiconductor layer 13 may be uniform or non-uniform. That is, the structure of the light emitting structure 10 may be variously formed, but the present invention is not limited thereto.

As another example, a first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure may be formed between the first semiconductor layer 11 and the active layer 12. Also, a second conductive AlGaN layer may be formed between the second semiconductor layer 13 and the active layer 12.

A plurality of recesses (2) may be formed in the light emitting structure (10). The plurality of recesses 2 may be formed to have a lower depth than a lower surface of the second conductivity type semiconductor layer 13 and the active layer 12.

A protective layer 30, a first contact layer 15 and a second contact layer 33 may be formed on the light emitting structure 10 as shown in FIG. The protective layer 30 may be formed on the upper surface of the second semiconductor layer 13 and in the recess 2. When a part of the protective layer 30 is etched by the etching process, Contact layers 15 and 33 may be formed.

The protective layer 30 may be deposited with an insulating material. For example, the protective layer 30 may be formed of an oxide or a nitride. For example, the protective layer 30 may include at least one of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed.

The first contact layer 15 may be deposited or plated on the second semiconductor layer 13. The second adhesive layer 33 may be deposited or plated on the first semiconductor layer 11 exposed to the recesses 2.

The first contact layer 15 and the second contact layer 33 may be formed of, for example, a transparent conductive oxide film. The first contact layer 15 and the second contact layer 33 may be formed of, for example, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), aluminum gallium zinc oxide (Indium Zinc Tin Oxide), IZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide) , ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

Referring to FIG. 5, a reflective layer 17 is deposited or plated on the first contact layer 15 and the protective layer 30. The reflective layer 17 may be formed of a material having a high reflectivity. For example, the reflective layer 17 may be formed of a metal or an alloy including at least one selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. Here, a portion of the protective layer 30 may be exposed.

Referring to FIG. 6, a first capping layer 35 may be deposited or plated on the reflective layer 17 and the passivation layer 30. The first capping layer 35 may include at least one of Au, Cu, Ni, Ti, Ti, W, Cr, W, Pt, V, Fe and Mo.

Referring to FIG. 7, a second capping layer 45 is deposited or plated on one region of the first capping layer 35. The second capping layer 45 may be formed of the same metal or another metal as the first capping layer 35. The second capping layer 45 may be formed of Au, Cu, Ni, Ti, Ti, W, Cr, Fe, and Mo materials.

8, a first insulating layer 41 is formed on the protective layer 30, the reflective layer 17 and the first capping layer 35. The first insulating layer 41 has a predetermined thickness Lt; / RTI > When the first insulating layer 41 is formed, a hole 41A for opening a part of the second adhesive layer 33 is formed.

9, a diffusion preventing layer 50A and a bonding layer 50A are deposited or plated on the first insulating layer 41. At least one of the bonding layer 60A and the diffusion preventing layer 50A is formed on the first insulating layer 41, (51, 61) through which the second contact layer (33) is contacted via the second contact layer (41A). Here, the protrusion 61 of the diffusion preventing layer 50A may form a hole after forming the bonding layer 60A to form the protrusion 61, but the present invention is not limited thereto.

The diffusion preventing layer 50A may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe and Mo. The bonding layer 60A may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, .

Referring to FIG. 10, a hole 46A is formed through the bonding layer 60A to a region of the first capping layer 35. Referring to FIG. The hole 46A may be formed through a drilling process or an etching process, but is not limited thereto. The bonding layer 60A is separated into the first and second bonding layers 60 and 65 by the hole 46A and the diffusion preventing layer 50A is separated into the first and second diffusion preventing layers 50 and 55 Separated. The second diffusion barrier layer 55 is disposed in the upper region of the second capping layer 45 and the first diffusion barrier layer 50 is disposed on the first insulation layer 41.

Referring to FIG. 11, a second insulating layer 46 may be deposited on the hole 46A. The second insulating layer 46A may have a DBR structure in which different dielectric layers are stacked. At least two layers of the DBR structure are alternately arranged in the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , Such a DBR structure can reflect light later when the laser is irradiated, thereby blocking the laser from affecting the light emitting structure 10. [

The second insulating layer 46 is formed in the region between the first capping layer 35 and the first capping layer 45 and the first insulating layer 41 through the hole 46A, May be disposed in the region between the first and second bonding layers 60 and 65, and between the first and second diffusion preventing layers 50 and 55.

The second insulating layer 46 may have the same height as the upper surfaces of the first and second bonding layers 60 and 65, or may be disposed higher or lower.

Referring to FIG. 12, a supporting member 70A may be attached or deposited on the first and second bonding layers 60 and 65. When the support member 70A is attached, a hole 56 extending from the hole 46A is formed in a region corresponding to the hole 46A through a laser drilling process. By the extended hole 56, the support member 70A is separated into the first and second support members 70 and 75, and can be separated as shown in the example of FIG. At this time, in the laser drilling process, the second insulating layer 46 prevents the penetration of the laser, thereby protecting the first capping layer 35 and the light emitting structure 10. The second insulating layer 46 functions as an etching stop layer.

A first supporting member 70 may be attached to the first bonding layer 60 and a second supporting member 75 may be attached to the second bonding layer 65. A layer or sheet that can conductively bond the region between the first bonding layer 60 and the first support member 70 and between the second bonding layer 65 and the second support member 75, (Not shown) may be further disposed. The hole 56 between the first and second support members 70, 75 may be an extended region of the hole 46, which may be a void region or may be filled with a separate insulating material.

The first or second supporting member 70 or 75 may be formed of a metal or a carrier substrate such as Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu- (E.g., Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.).

Accordingly, the second electrode layer 70 and the third electrode layer 75 may be disposed on the light emitting structure 10. (Not shown) on the first support member 70 and a second adhesive layer (not shown) on the second support member 75. [ The first and second adhesive layers may include at least one of Au and Sn, and may be a paste material or a solder material.

Referring to FIG. 13, the substrate 5 is removed from the first semiconductor layer 11. As one example, the substrate 5 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a process of irradiating a laser on the lower surface of the substrate 5 to peel the substrate 5 and the first semiconductor layer 11 from each other.

As shown in FIG. 14, the structure from which the substrate is removed in FIG. 13 is subjected to isolation etching so that the side surface of the light emitting structure 10 is etched and a part of the protective layer 30 is exposed. The isolation etching can be performed by, for example, dry etching such as ICP (Inductively Coupled Plasma), but is not limited thereto. By the isolation etching, adjacent light emitting structures 10 can be separated from each other.

Here, the first semiconductor layer 11 of the light emitting structure 10 may be etched to form a protrusion 16 protruding at a predetermined height T1. Here, the protrusion 16 may be a first conductive semiconductor layer or an undoped semiconductor layer, but the present invention is not limited thereto.

The light emitting structure 10 may include a first semiconductor layer 11 of a first conductivity type, an active layer 12, and a second semiconductor layer 13 of a second conductivity type.

As shown in FIG. 15, the concave and convex portions 11A may be formed on the upper surface of the light emitting structure 10. The concave and convex portions 11A provided in the light emitting structure 10 may be formed by a photoelectrochemical (PEC) etching process as an example. Accordingly, according to the embodiment, the effect of extracting external light can be increased.

On the other hand, a light-transmitting layer 95 may be formed on the surface of the light-emitting structure 10. The light-transmitting layer 95 may protect the light-emitting structure 10. The light-transmitting layer 95 may be formed of, for example, an oxide or a nitride. For example, the light-transmitting layer 95 may include at least one of the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed. Meanwhile, the light-transmitting layer 95 may be omitted according to design.

In the light emitting device according to the embodiment, a phosphor layer (not shown) or a lens may be formed on the light emitting structure 10. The manufacturing process described above is described as an example, and the manufacturing process may be variously modified depending on the design and purpose.

That is, the light emitting device according to the embodiment may include a plurality of light emitting structures that can be individually driven in one device. In the embodiment, one light emitting structure is disposed on one light emitting element. However, two or more light emitting structures may be disposed on one light emitting element, or may be separately driven.

16 is a side sectional view showing a light emitting device according to the second embodiment. In describing the second embodiment, the same portions as those of the first embodiment will be described with reference to the description of the first embodiment.

16, a light emitting device includes a light emitting structure 10 having a plurality of semiconductor layers 11, 12, and 13, a first electrode layer 81 under the light emitting structure 10, a first electrode layer 81, A first insulating layer 41 between the first and second electrode layers 81 and 83 and a first insulating layer 41 connected to the first electrode layer 81, A third electrode layer 85 adjacent to the second electrode layer 83, a second insulating layer 46 disposed in the holes 46A and 56 between the second electrode layer 83 and the third electrode layer 85, And an insulating material 57.

A second insulating layer 46 is disposed in the hole 46A between the second electrode layer 83 and the third electrode layer 85. [ The second insulating layer 46 is formed on the first diffusion preventing layer 50 and the first bonding layer 60 of the second electrode layer 83 and the second diffusion preventing layer 55 of the third electrode layer 85, Layer 65 as shown in FIG.

An insulating material 57 may be disposed in the hole 56 between the first and second support members 70 and 75 of the hole 46A. The insulating material 57 may be in contact with the second insulating layer 46 and may attach the first and second supporting members 70 and 75 to each other. The insulating material 57 may be disposed of a material such as silicon or epoxy. The insulating material 57 may also include a ceramic material such as AlN, which may be a thermal conductive impurity. Accordingly, the heat radiation efficiency can be improved due to the heat transfer between the first and second support members 70 and 75.

17 is a side sectional view showing a light emitting device according to the third embodiment. In describing the third embodiment, the same portions as those of the first and second embodiments will be described with reference to the first and second embodiments.

17, the light emitting device includes a light emitting structure 10 having a plurality of semiconductor layers 11, 12 and 13, a first electrode layer 81 under the light emitting structure 10, a first electrode layer 81, A first insulating layer 41 between the first and second electrode layers 81 and 83 and a first insulating layer 41 connected to the first electrode layer 81, A third electrode layer 85 adjacent to the second electrode layer 83 and a second insulating layer 46 disposed in a hole 46A between the second electrode layer 83 and the third electrode layer 85 .

A second insulating layer 46 is disposed in the hole 46A between the second electrode layer 83 and the third electrode layer 85. [ The second insulating layer 46 is formed on the first diffusion preventing layer 50 and the first bonding layer 60 of the second electrode layer 83 and the second diffusion preventing layer 55 of the third electrode layer 85, Layer 65 as shown in FIG.

As shown in FIG. 1, the hole 46A may have an opening in the hole 56 between the first and second supporting members 70 and 75, or an insulating material may be disposed as shown in FIG.

The third electrode layer 85 is disposed under a partial region of the first electrode layer 81 and is connected to the first capping layer 35. The third electrode layer 85 includes a second capping layer 45, a second diffusion barrier layer 55, a second bonding layer 65, and a second support member 75.

The second support member 75 may be an area where an adhesive layer (not shown) such as solder is adhered, and it may be necessary to secure an adhesion area. The bottom width B2 or bottom area of the second supporting member 75 may be larger than the bottom width B1 or the bottom area of the second bonding layer 65. [ Accordingly, the adhesion area between the second support member 75 and the adhesive layer (not shown) can be improved, and the heat transfer efficiency between the second support member 75 and the adhesive layer can be improved.

The light emitting device according to the embodiment described above may be mounted on a substrate, or may be provided in the package as shown in FIG.

18 is a view illustrating a light emitting device package to which the light emitting device according to the embodiment is applied.

18, the light emitting device package includes a body 101, first and second lead electrodes 121 and 123 disposed on the body 101, A light emitting device 100 according to an embodiment electrically connected to the first lead electrode 121 and the second lead electrode 123 and a molding member 131 surrounding the light emitting device 100.

The body 101 includes an insulating material or a conductive material. The body 101 may be formed of, for example, a silicon material, a synthetic resin material, or a metal material. A cavity 103 having an inclined surface around the light emitting device 100 .

The first lead electrode 121 and the second lead electrode 123 are electrically separated from each other by the gap portion 125 and provide power to the light emitting device 100. The gap portion 125 may be made of the same insulating material as the body 101 or may be made of another insulating material. The first lead electrode 121 and the second lead electrode 123 may increase light efficiency by reflecting the light generated from the light emitting device 100, To the outside.

The first and second support members 70 and 75 of the light emitting device 100 shown in FIG. 1 may be disposed on the first lead electrode 121 and the second lead electrode 123. The first and second supporting members 70 and 75 may be die-bonded to the first and second adhesive layers 131 and 133 which are conductive with the first lead electrode 121 and the second lead electrode 123 . The gap between the first and second adhesive layers 131 and 133 may be equal to the width of the hole 56. The hole 56 between the first and second support members 70 and 75 may extend to the lower surface of the adhesive layer 131 or 133, or may be filled with an insulating material.

The molding member 131 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 131 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

10: light emitting structure 11: first semiconductor layer
12: active layer 13: second semiconductor layer
15: first contact layer 16: protrusion
17: reflective layer 30: protective layer
33: second contact layer 35: first capping layer
41: first insulating layer 45: second capping layer
46: second insulating layer 50: first diffusion preventing layer
55: second diffusion preventing layer 60: first bonding layer
65: second bonding layer 70: first supporting member
75: second supporting member 95: light-transmitting layer
81: first electrode layer 83: second electrode layer
85: Third electrode layer

Claims (11)

A light emitting structure including a first semiconductor layer, an active layer below the first semiconductor layer, and a second semiconductor layer below the active layer;
A first electrode layer disposed below the second semiconductor layer;
A second electrode layer disposed under the second semiconductor layer and electrically connected to the first semiconductor layer;
A first insulating layer disposed between the first and second electrode layers;
A third electrode layer connected to the first electrode layer and spaced apart from the second electrode layer below the first electrode layer; And
And a second insulating layer disposed between the second electrode layer and the third electrode layer. The method according to claim 1,
And the second insulating layer is disposed between the first insulating layer and the first, second, and third electrode layers. The method according to claim 1,
And the bottom width of the second electrode layer is larger than the bottom width of the third electrode layer. 4. The method according to any one of claims 1 to 3,
Wherein the first electrode layer comprises a first electrode layer,
A contact layer contacting the second semiconductor layer;
A reflective layer disposed below the contact layer; And
And a first capping layer disposed between the reflective layer and the insulating layer,
And the first capping layer is connected to the third electrode layer. 5. The method of claim 4,
And the second electrode layer
A first diffusion barrier layer disposed under the first insulation layer;
A first bonding layer disposed below the first diffusion barrier layer; And
And a first support member disposed below the first bonding layer,
Wherein at least one of the first diffusion prevention layer and the first bonding layer is connected to the first semiconductor layer. 6. The method of claim 5,
And the third electrode layer includes a plurality of metal layers which are the same as the layers constituting the second electrode layer. The method according to claim 6,
Wherein the third electrode layer comprises
A second capping layer disposed under the first capping layer;
A second diffusion barrier layer disposed below the second capping layer;
A second bonding layer below the second diffusion barrier layer; And
And a second supporting member below the second bonding layer,
And the second insulating layer is disposed under the lower surface of the first capping layer. The method according to claim 6,
Wherein the second insulating layer is formed by stacking different dielectric layers. 8. The method of claim 7,
Wherein the hole disposed between the first and second support members comprises a void region or an insulating material. 8. The method of claim 7,
And a bottom width of the second supporting member is larger than a bottom width of the second bonding layer. 10. The method of claim 9,
And first and second conductive adhesive layers spaced apart from each other by the same width as the hole below the second and third electrode layers.

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