KR101686750B1 - Light emitting diode with array pattern and method for manufacturing the same - Google Patents

Light emitting diode with array pattern and method for manufacturing the same Download PDF

Info

Publication number
KR101686750B1
KR101686750B1 KR1020150131711A KR20150131711A KR101686750B1 KR 101686750 B1 KR101686750 B1 KR 101686750B1 KR 1020150131711 A KR1020150131711 A KR 1020150131711A KR 20150131711 A KR20150131711 A KR 20150131711A KR 101686750 B1 KR101686750 B1 KR 101686750B1
Authority
KR
South Korea
Prior art keywords
light emitting
layer
semiconductor layer
light
electrode
Prior art date
Application number
KR1020150131711A
Other languages
Korean (ko)
Inventor
김상묵
백종협
이광철
구희성
김자연
Original Assignee
한국광기술원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한국광기술원 filed Critical 한국광기술원
Priority to KR1020150131711A priority Critical patent/KR101686750B1/en
Application granted granted Critical
Publication of KR101686750B1 publication Critical patent/KR101686750B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Abstract

An object of the present invention is to provide a light emitting device having an array structure in which a light emitting device is configured so that a unit cell has an array structure and the light emitting device is moved at a time to form a package, and a method for manufacturing the same. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on the etching region, and the first semiconductor layer, the active layer, and the second semiconductor layer are sequentially formed on the substrate, To form a light-emitting structure (A); b) etching a part of the active layer and the second semiconductor layer to expose a part of the first semiconductor layer, and etching the side surfaces of the etched active layer and the second semiconductor layer, Forming a first protective layer to prevent short-circuiting; c) forming a first electrode and a second electrode on the upper surface of the substrate in the first semiconductor layer and the second semiconductor layer, respectively; d) forming a second protective layer for protecting the light emitting structure (A), the first and second electrodes; And e) removing the etching region to separate the substrate from the light emitting structure (A), the first electrode, and the second electrode. Accordingly, the present invention is advantageous in that a light emitting device is configured so that a plurality of light emitting structures have an array structure, and a light emitting device having a plurality of array structures other than a unit cell is moved at a time to form a light emitting device package.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a light emitting device having an array structure and a method of manufacturing the same,

The present invention relates to a light emitting device having an array structure and a method of manufacturing the same. More particularly, the present invention relates to a light emitting device having a plurality of light emitting structures having an array structure, Emitting device having an array structure which can be configured as a light-emitting device package by moving the light-emitting device package at a time, and a method of manufacturing the same.

In general, a light emitting diode (LED) is a semiconductor device that converts current into light.

The wavelength of the light emitted by the light emitting element depends on the characteristics of the semiconductor material used to manufacture the light emitting element.

This is because the wavelength of the emitted light depends on the band gap characteristics of the semiconductor material, which represents the energy difference between the valence band, the electrons and the conduction band electrons.

In particular, Gallium Nitride (GaN) has attracted much attention.

This is because the GaN can be combined with other elements to produce a semiconductor layer emitting green, blue or white light.

These GaN-based light emitting devices are generally stacked on a sapphire (Al 2 O 3) layer (or a sapphire wafer).

This is because the sapphire layer is available in a size suitable for mass production of GaN-based devices, supports relatively high-quality GaN thin film growth and has a wide temperature processing capability.

In addition, the sapphire layer is chemically or thermally stable, has a high melting point enabling a high temperature manufacturing process, and has a high binding energy (122.4 kcal) and a dielectric constant.

When such a sapphire layer is used, a horizontal element type method can be adopted.

The description will be made with reference to Fig. 1 showing conceptually the light emitting element 10 of the horizontal element type.

In the horizontal light emitting device 10, a semiconductor layer S is stacked on a sapphire layer 11. [

The semiconductor layer S includes an n-GaN layer 12 stacked on the sapphire layer 11, an active region 13 stacked on the n-GaN layer 12, And a p-GaN layer 14 stacked on the p-GaN layer 13.

At this time, a transparent electrode layer 15 and a p-electrode P are stacked on the p-GaN layer 14.

In addition, an n-electrode N is stacked on one side of the n-GaN layer 12.

At this time, the insulating layer 17 is stacked on the exposed portion between the p-electrode P and the n-electrode N.

In other words, all of the electrodes of the horizontal type light emitting device 10 are located on the upper surface.

As described above, the conventional horizontal flat light emitting device 10 can fabricate a chip in the simplest form, but has a problem that the light emitting area is small, current spreading, and heat transfer.

To solve this problem, a vertical light emitting device 20 has been proposed.

The vertical light emitting device 20 will be described with reference to FIG. 2 showing the concept of the vertical light emitting device 20. FIG.

As shown in the figure, the vertical light emitting device 20 has a p-GaN layer 22 stacked on a conductive substrate 21.

An active layer 23 is stacked on the p-GaN layer 22 and an n-GaN layer 24 is stacked thereon.

An n-electrode N is stacked on the n-GaN layer 24, and a transparent electrode 25 is stacked on the n-electrode N.

The vertical type light emitting device 20 can increase the number of chips, increase the light emitting area, and increase current diffusion.

Korean Patent Laid-Open Publication No. 10-2014-0092090 (entitled: Light Emitting Device Package) discloses a light emitting device package using a general light emitting device.

However, the conventional light emitting devices are manufactured to be unit cells and then individually mounted on the LED package, which makes it difficult to manufacture a micro-sized LED package.

In addition, when the conventional light emitting devices are mounted on a flexible substrate, it is difficult to form a light emitting device formed by a unit cell in an LED package due to the flexibility of the flexible substrate.

Korean Patent Laid-Open Publication No. 10-2014-0092090 (entitled: Light emitting device package)

In order to solve such problems, the present invention can be configured as a light emitting device package by constructing a light emitting device such that a plurality of light emitting structures have an array structure, and moving the light emitting devices having a plurality of array structures, And a method of manufacturing the same.

According to an aspect of the present invention, there is provided a method of manufacturing a light emitting device, including the steps of: a) growing an etching region on a substrate for separating a light emitting device and a substrate; forming a first semiconductor layer, Sequentially forming a semiconductor layer; b) etching a part of the active layer and the second semiconductor layer at a predetermined interval to form a plurality of light emitting structures (A) arranged in a matrix pattern in which a part of the first semiconductor layer is exposed, Forming a first passivation layer to prevent a side of the second semiconductor layer and a short of the first and second semiconductor layers; c) forming a first electrode and a second electrode, respectively, on the upper surface of the substrate in the first semiconductor layer and the second semiconductor layer of the light emitting structure (A); d) forming a second protective layer for protecting the plurality of light emitting structures (A), the first and second electrodes, and photo-converting light emitted from the light emitting structure (A) on the second protective layer, And a passive region formed at a predetermined interval according to a pattern in which the light emitting structure A is arranged to prevent leakage of light emitted from the light emitting structure A, ; And e) removing the etching region to separate the substrate from the light emitting structure (A), the first electrode, and the second electrode.

The etching region of step a) according to the present invention may be formed of a material having a composition formula of AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1) .

In addition, the step d) may further include forming a phosphor layer so that light emitted from the light emitting structure A is photo-converted to emit light having at least one color .

In addition, the phosphor layer according to the present invention includes at least one phosphor selected from the group consisting of a transparent, red light conversion phosphor, a green light conversion phosphor and a yellow light conversion phosphor.

In addition, the phosphor layer according to the present invention is formed as a thin film using at least one of silicon, epoxy, and acrylic.

According to another aspect of the present invention, there is provided a light emitting device including a first semiconductor layer, an active layer, and a second semiconductor layer successively formed on a substrate, wherein a part of the active layer and a portion of the second semiconductor layer are etched at regular intervals, A plurality of light emitting structures (A) arrayed in the exposed matrix pattern; A first protective layer that protects the periphery of the light emitting structure A to prevent a short of the first and second semiconductor layers; A first electrode formed to extend from the exposed first semiconductor layer to a bottom surface of the light emitting structure A by a predetermined length; A second electrode extending from the second semiconductor layer to a bottom surface of the light emitting structure A by a predetermined length; A second protective layer for protecting the plurality of light emitting structures (A), the first and second electrodes; And a second passivation layer disposed on the second passivation layer to convert light emitted from the light emitting structure into light having at least one color, And a passivation layer for preventing leakage of light emitted from the light emitting structure A is formed.

In addition, the light emitting device according to the present invention is characterized in that it comprises a plurality of light emitting structure A, and a module in which first and second electrodes are arrayed.

The light emitting device according to the present invention is arranged in a matrix pattern and outputs at least one of blue, green, red, and white light.

The present invention is advantageous in that a light emitting device is configured such that a plurality of light emitting structures have an array structure, and a light emitting device having a plurality of array structures other than a unit cell is moved at a time to constitute a light emitting device package.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing a light-emitting element of a horizontal element type.
2 is a cross-sectional view conceptually showing a vertical element type light emitting device.
3 is a cross-sectional view illustrating a light emitting device having an array structure according to the present invention.
4 is a cross-sectional view showing a light emitting structure of a light emitting device having an array structure according to FIG. 3;
5 is a sectional view showing a state in which the light emitting device having the array structure according to FIG. 3 is etched.
6 is a sectional view showing a state in which electrodes are formed in a light emitting device having an array structure according to the present invention.
7 is a sectional view showing a state in which a fluorescent layer is formed in a light emitting device having an array structure according to the present invention.
8 is a cross-sectional view illustrating a state in which a substrate is removed from a light emitting device having an array structure according to the present invention.

Hereinafter, preferred embodiments of a light emitting device having an array structure and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a cross-sectional view illustrating a light emitting device having an array structure according to the present invention, FIG. 4 is a cross-sectional view illustrating a light emitting device having an array structure according to FIG. 3, and FIG. 5 is a cross- 6 is a cross-sectional view illustrating a state in which an electrode is formed in a light emitting device having an array structure according to the present invention, and FIG. 7 is a cross-sectional view illustrating a state in which a light emitting device having an array structure according to the present invention, FIG. 8 is a cross-sectional view illustrating a state in which a substrate is removed from a light emitting device having an array structure according to the present invention.

3 to 8, a light emitting device 100 having an array structure according to the present invention includes a substrate 110, an etching region 111, a first semiconductor layer 120, an active layer 130, The current blocking layer 160, the first electrode 170, the second electrode 180, and the light emitting structure A formed of the first semiconductor layer 140, the second semiconductor layer 140, the first passivation layer 150, A plurality of light emitting devices 100, which include at least one of a first protective layer 190, a second protective layer 190 and a phosphor layer 200 and output at least one of blue, green, red, and white, are arranged in a matrix pattern, The first electrode 110 and the etching region 111 are formed separately from the light emitting structure A, the first electrode 170, and the second electrode 180.

The substrate 110 is made of any one of sapphire (Al 2 O 3 ), gallium nitride (GaN), silicon carbide (SiC), silicon (Si) and gallium arsenide (GaAs) Al 2 O 3 ).

The etching region 111 is made of a material having a composition formula of AlxInyGa (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y?

The light emitting structure A includes a first semiconductor layer 120, an active layer 130, a second semiconductor layer 140, and a second semiconductor layer 140. The first semiconductor layer 120 includes a plurality of compound semiconductor layers, for example, Are sequentially formed.

The light-emitting structure A may be formed by, for example, a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) , Molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE), but the present invention is not limited thereto.

The active layer 130 of the arrayed light emitting structure A and the active layer 130 of the second semiconductor layer 140 may be formed by etching the light emitting structure A at a predetermined interval so as to be arrayed in a matrix pattern, A part of the first semiconductor layer 120 is exposed by etching a part of the region.

The first semiconductor layer 120 may be formed of a semiconductor compound. For example, the first semiconductor layer 120 may be formed of a compound semiconductor such as a group III-V or a group II-VI. have.

In addition, when the first semiconductor layer 120 is an n-type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te, or the like as the n-type dopant, but is not limited thereto.

In addition, when the first semiconductor layer 120 is a p-type semiconductor layer, the first conductive dopant may include Mg, Zn, Ca, Sr, and Ba as p-type dopants, but is not limited thereto.

The first semiconductor layer 120 may include a semiconductor material having a composition formula of AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1) The first semiconductor layer 120 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The active layer 130 is a layer in which electrons and holes meet each other to emit light having energy determined by an energy band inherent in an active layer (light emitting layer) material. The first semiconductor layer 120 is an n- When the second semiconductor layer 140 is a p-type semiconductor layer, electrons may be injected from the first semiconductor layer 120 and holes may be injected from the second semiconductor layer 140.

The active layer 130 may be formed of a single well structure, a multi-well structure, a quantum-wire structure, or a quantum dot structure. The active layer 130 may be formed into a multi- The InGaN / InGaN, InGaN / AlGaN, InAlGaN / GaN, InGaN / AlGaN, GaAs (InGaAs) / AlGaAs and GaP (InGaP) / AlGaP well layers / barrier layers of the active layer 130 are formed of InGaN / But the present invention is not limited thereto.

The second semiconductor layer 140 may be formed of a semiconductor compound, for example, a compound semiconductor such as a group III-V group or a group II-VI-VI compound, have.

When the second semiconductor layer 140 is a p-type semiconductor layer, the second conductive dopant may include, but not limited to, Mg, Zn, Ca, Sr, and Ba as p-type dopants.

In addition, when the second semiconductor layer 140 is an n-type semiconductor layer, the second conductive dopant may include Si, Ge, Sn, Se, and Te as n-type dopants. However, The second semiconductor layer 140 may include a semiconductor material having a composition formula of AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? , InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

Hereinafter, the case where the first semiconductor layer 120 is an n-type semiconductor layer and the second semiconductor layer 140 is a p-type semiconductor layer will be described as an example.

The first passivation layer 150 protects the active layer 130 and the second semiconductor layer 140 of the light emitting structure A exposed through etching and the periphery of the light emitting structure A, The second semiconductor layer 120 and 140 may be formed of any one material selected from the group consisting of SiO2, Si3N4, resin, and spin on glass (SOG).

The current diffusion layer 160 is formed on the upper surface of the second semiconductor layer 140 and improves the spreading characteristic of the current supplied to the second semiconductor layer 140 through the second electrode 180, And is made of a metal such as Ni / Au or an oxide film such as ITO or ZnO.

The current diffusion layer 160 may be formed of a reflective layer and may be formed of Ag, Ni, Al, Ti, Pd, Pt, Pt, ruthenium, gold, rhodium, iridium, indium tin oxide, indium zinc oxide, indium oxide, tin oxide, silicon dioxide, (Si 3 N 4), aluminum oxide, titanium oxide, or the like.

The first electrode 170 is provided on the first semiconductor layer 120 exposed on one side 170a and the other side 170b is extended from the first semiconductor layer 120 on the bottom surface of the light emitting structure A by a predetermined length And is formed to be in contact with the upper surface of the substrate 110, and is formed using a known electrode material.

The second electrode 180 is formed on one side 180a of the second semiconductor layer 140 and the current diffusion layer 160 and the other side 180b of the second electrode 180 is formed on the bottom surface of the light emitting structure A from the second semiconductor layer 40. [ To be in contact with the upper surface of the substrate 110, and is formed using a known electrode material.

The second passivation layer 190 is formed of SiO 2, Si 3 N 4, resin or SOG (Spin) so that the light emitting structure A, the current diffusion layer 160, the first and second electrodes 170 and 180 are insulated and protected. on Glass). < / RTI >

The phosphor layer 200 is formed on an upper portion of the light emitting structure A patterned in the form of a matrix so that light emitted from the light emitting structure A is converted into light, And includes a phosphor such that light having an arbitrary wavelength range (or color) is emitted by being excited and absorbed by a part of light.

The phosphor includes a ceramic-based fluorescent material, a quantum dot fluorescent material, a garnet-based fluorescent material, a silicate-based fluorescent material, a nitrite-based fluorescent material, an oxynitride-based fluorescent material, or the like.

Also, at least one of the red light-converting phosphor, the green light-converting phosphor and the yellow light-converting phosphor is formed so that light conversion can occur at a position corresponding to the light-emitting structure A, or the light- So that the red phosphor layer 200a emitting red light, the green phosphor layer 200b emitting green light, and the blue phosphor layer 200c emitting blue light can be constituted.

The phosphor layer 200 may be formed of a thin film made of at least one material selected from the group consisting of silicon, epoxy, and acrylic as a transparent resin that allows light emitted from the light emitting structure A to pass therethrough desirable.

The phosphor layer 200 may be formed by forming a passive region 210 at regular intervals according to a pattern in which the light emitting structures A are arranged. Thus, when the light emitting structure A composed of unit cells emits light, It can prevent light leakage and can be made of light absorbing or diffusing material such as CNT, reflective metal, TiO 2 , ceramic powder and so on.

Next, a manufacturing process of a light emitting device having an array structure according to the present invention will be described.

An etching region 111 for separating the light emitting device 100 and the substrate 110 is grown on the substrate 110 and the first semiconductor layer 120, the active layer 130, And a second semiconductor layer 140 are sequentially formed, and a light emitting structure A arrayed in a matrix pattern is formed through etching.

The substrate 110 is made of any one of sapphire (Al 2 O 3 ), gallium nitride (GaN), silicon carbide (SiC), silicon (Si) and gallium arsenide (GaAs) Al 2 O 3 ).

The etching region 111 is made of a material having a composition formula of AlxInyGa (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y?

The active layer 130 of the arrayed light emitting structure A and a part of the second semiconductor layer 140 may be formed by etching the light emitting structure A at a predetermined interval so as to be arrayed in a matrix pattern, So that a portion of the first semiconductor layer 120 is exposed.

In order to prevent the side surfaces of the active layer 130 and the second semiconductor layer 140 exposed by the etching and the shorting between the first semiconductor layer 120 and the second semiconductor layer 140, So that the first passivation layer 150 is formed along the periphery of the first passivation layer A.

A current spreading layer 160 is formed on the upper surface of the second semiconductor layer 140 of the light emitting structure A to improve the spreading characteristics of the current supplied to the second semiconductor layer 140 through the second electrode 180. [ So that the light extraction efficiency is enhanced.

The first electrode 170 is disposed on the exposed upper surface of the first semiconductor layer 120 and the upper surface of the substrate 110.

The upper surface of the unetched second semiconductor layer 140 and the current diffusion layer 160 and the upper surface of the substrate 110 dispose the second electrode 180.

The first and second electrodes 170 and 180 may be formed of at least one selected from the group consisting of Mo, Cr, Ni, Au, Al, Ti, Pt, Layer structure including at least one of tungsten (V), tungsten (W), lead (Pd), copper (Cu), rhodium (Rh) or iridium (Ir).

When the first and second electrodes 170 and 180 are formed, the light emitting structure A, the current diffusion layer 160, and the first and second electrodes 170 and 180 are formed between the light emitting structure A, The diffusion layer 160 and the second passivation layer 190 for protecting the first and second electrodes 170 and 180 may be additionally formed to further function as a support substrate in the process of removing the substrate 110.

The second passivation layer 190 may include a phosphor such that the light emitted from the light emitting structure A is photo-converted corresponding to a pattern in which the light emitting structure A is arranged to output light having at least one color. A phosphor layer 200 is formed.

The phosphor layer 200 includes at least one phosphor selected from the group consisting of transparent, red light conversion fluorescent substance, green light conversion fluorescent substance, and yellow light conversion fluorescent substance so that any one of red, green, blue, As a composition, it is formed into a film of thin film using at least one of the preferred silicon, epoxy or acrylic.

When the phosphor layer 200 is disposed, the substrate 110 is removed to expose the first and second electrodes 170 and 180 on the bottom surface of the light emitting structure A, The light emitting device 100 having a balanced array structure can be provided.

Accordingly, the first, second, and third light emitting devices 100a, 100b, and 100c are arranged such that the first light emitting device 100a, the second light emitting device 100b, the third light emitting device 100c, A red phosphor layer 200a emitting red light, a green phosphor layer 200b emitting green light, and a blue phosphor layer 200c emitting blue light are arranged on the substrate 200 to provide the light emitting element 100 having an array structure And the light emitting device 100 is cut along a perforated line such as C1 or C2 according to a required size, thereby providing a light emitting device with improved degree of design freedom.

In addition, since the light emitting device can be constructed so that the plurality of light emitting structures have an array structure, and the light emitting device having multiple array structures other than the unit cells can be moved at a time to constitute the light emitting device package, ) At the same time, it is possible to improve the manufacturing efficiency.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that

In the course of the description of the embodiments of the present invention, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, , Which may vary depending on the intentions or customs of the user, the operator, and the interpretation of such terms should be based on the contents throughout this specification.

100: light emitting element 100a: first light emitting element
100b: second light emitting device 100c: third light emitting device
110: substrate 120: first semiconductor layer
130: active layer 140: second semiconductor layer
150: first protection layer 160: current diffusion layer
170: first electrode 180: second electrode
190: Second protective layer 200: Phosphor layer
200a: red phosphor layer 200b: green phosphor layer
200c: blue phosphor layer 210: passive region

Claims (8)

a) an etching region 111 for separating the light emitting device 100 and the substrate 110 is grown on the substrate 110 and a first semiconductor layer 120, an active layer 130, and a second semiconductor layer 140 sequentially;
b) etching a portion of the active layer 130 and the second semiconductor layer 140 at regular intervals to form a plurality of light emitting structures A arranged in a matrix pattern in which a part of the first semiconductor layer 120 is exposed, And a first passivation layer 150 for preventing the side surfaces of the etched active layer 130 and the second semiconductor layer 140 and the first and second semiconductor layers 120 and 140 from short- ;
c) a first electrode 170 and a second electrode 180 are formed on the upper surface of the substrate 110 in the first semiconductor layer 120 and the second semiconductor layer 140 of the light emitting structure A, respectively, ;
d) forming a second passivation layer 190 for protecting the plurality of light emitting structures A, the first and second electrodes 170 and 180, and forming a light emitting structure A (A) on the second passivation layer 190, (A) is formed at a predetermined interval according to a pattern in which the light emitting structure (A) is arranged, so that leakage of light emitted from the light emitting structure (A) Forming a phosphor layer (200) having a passive region (210) for preventing the phosphor layer (200) from being formed; And
e) removing the etching region (111) to separate the substrate (110) from the light emitting structure (A), the first electrode (170), and the second electrode (180) Way.
The method according to claim 1,
The etching region 111 in the step a) is formed of a material having a composition formula of AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1) Emitting element having an array structure.
delete The method according to claim 1,
Wherein the phosphor layer (200) comprises at least one phosphor selected from the group consisting of transparent, red light conversion fluorescent substance, green light conversion fluorescent substance, and yellow light conversion fluorescent substance.
The method according to claim 1,
Wherein the phosphor layer (200) is formed of a thin film using at least one of silicon, epoxy, and acrylic.
A first semiconductor layer 120, an active layer 130 and a second semiconductor layer 140 are sequentially formed and a part of the active layer 130 and the second semiconductor layer 140 are etched at regular intervals, A plurality of light emitting structures (A) arranged in a matrix pattern in which a part of one semiconductor layer (120) is exposed;
The active layer 130 and the second semiconductor layer 140 exposed by the etching and the peripheral portion of the light emitting structure A are protected to prevent a short of the first and second semiconductor layers 120 and 140 A first passivation layer (150);
A first electrode 170 formed by extending a predetermined length from the exposed first semiconductor layer 120 to the bottom surface of the light emitting structure A;
A second electrode 180 formed to extend from the second semiconductor layer 140 to a bottom surface of the light emitting structure A by a predetermined length;
A second passivation layer 190 for protecting the plurality of light emitting structures A, the first and second electrodes 170 and 180; And
The second light emitting structure A is disposed on the second passivation layer 190 so that light emitted from the light emitting structure A is photo-converted to output light having at least one color, And a phosphor layer (200) formed at regular intervals to form a passive region (210) for preventing leakage of light emitted from the light emitting structure (A).
delete The method according to claim 6,
Wherein the light emitting device is arranged in a matrix pattern and outputs at least one of blue, green, red, and white light.
KR1020150131711A 2015-09-17 2015-09-17 Light emitting diode with array pattern and method for manufacturing the same KR101686750B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150131711A KR101686750B1 (en) 2015-09-17 2015-09-17 Light emitting diode with array pattern and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150131711A KR101686750B1 (en) 2015-09-17 2015-09-17 Light emitting diode with array pattern and method for manufacturing the same

Publications (1)

Publication Number Publication Date
KR101686750B1 true KR101686750B1 (en) 2016-12-14

Family

ID=57575650

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150131711A KR101686750B1 (en) 2015-09-17 2015-09-17 Light emitting diode with array pattern and method for manufacturing the same

Country Status (1)

Country Link
KR (1) KR101686750B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019190089A1 (en) * 2018-03-27 2019-10-03 ㈜라이타이저 Display device and method for manufacturing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060121454A (en) * 2005-05-24 2006-11-29 엘지전자 주식회사 Method for fabricating light emitting device array
KR100757800B1 (en) * 2006-06-30 2007-09-11 서울옵토디바이스주식회사 Light emitting diode for ac operation with insulation passivation layer and method of fabricating the same
KR20090122833A (en) * 2008-05-26 2009-12-01 한국광기술원 Light emitting diode and method for fabricating the same
KR20110086348A (en) * 2010-01-22 2011-07-28 영남대학교 산학협력단 Method for manufacturing vertical light emitting diode
KR20140092090A (en) 2013-01-15 2014-07-23 엘지이노텍 주식회사 Light emitting device package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060121454A (en) * 2005-05-24 2006-11-29 엘지전자 주식회사 Method for fabricating light emitting device array
KR100757800B1 (en) * 2006-06-30 2007-09-11 서울옵토디바이스주식회사 Light emitting diode for ac operation with insulation passivation layer and method of fabricating the same
KR20090122833A (en) * 2008-05-26 2009-12-01 한국광기술원 Light emitting diode and method for fabricating the same
KR20110086348A (en) * 2010-01-22 2011-07-28 영남대학교 산학협력단 Method for manufacturing vertical light emitting diode
KR20140092090A (en) 2013-01-15 2014-07-23 엘지이노텍 주식회사 Light emitting device package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019190089A1 (en) * 2018-03-27 2019-10-03 ㈜라이타이저 Display device and method for manufacturing same

Similar Documents

Publication Publication Date Title
JP5450399B2 (en) Semiconductor light emitting device and manufacturing method thereof
EP2221873B1 (en) Light emitting device
US8853719B2 (en) Semiconductor light-emitting device and light-emitting device package having the same
US9214606B2 (en) Method of manufacturing light-emitting diode package
US11901487B2 (en) Ultrathin solid state dies and methods of manufacturing the same
US9537073B2 (en) Method for fabricating a light emitting diode (LED) die having strap layer
KR102353570B1 (en) Light emitting device and light emitting device package having thereof
KR20100093973A (en) Lighting emitting device and fabrication method thereof
KR102164087B1 (en) Light emitting deviceand light emitting device package thereof
KR102237149B1 (en) Light emitting device and lighting system
KR102250516B1 (en) Light emitting device
KR101686750B1 (en) Light emitting diode with array pattern and method for manufacturing the same
KR101689164B1 (en) Light-Emitting device
KR101007145B1 (en) Light emitting device chip, light emitting device package and method for fabricating the light emitting device chip
KR102237148B1 (en) Method of manufacturing light emitting device
KR102250523B1 (en) Light emitting device and lighting system
KR101232069B1 (en) Light emitting device and method fabricating the same
EP3376546B1 (en) Ultraviolet light-emitting element
KR102346649B1 (en) Light emitting device and light emitting device package having thereof
KR101681573B1 (en) Method of manufacturing Light emitting device
KR102249637B1 (en) Light emitting device and light emitting device package thereof
KR101205836B1 (en) Semiconductor light emitting device array and manufacturing method thereof
KR102175329B1 (en) Light emitting device and lighting system having the same
KR20150140938A (en) Light emitting device and light emitting device package
KR20160054330A (en) Light emitting device and light emitting device package thereof

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20191202

Year of fee payment: 4