KR20160041908A - 연마 가공 공구 및 부재의 가공 방법 - Google Patents
연마 가공 공구 및 부재의 가공 방법 Download PDFInfo
- Publication number
- KR20160041908A KR20160041908A KR1020167002949A KR20167002949A KR20160041908A KR 20160041908 A KR20160041908 A KR 20160041908A KR 1020167002949 A KR1020167002949 A KR 1020167002949A KR 20167002949 A KR20167002949 A KR 20167002949A KR 20160041908 A KR20160041908 A KR 20160041908A
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- polished
- workpiece
- tool
- curved surface
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 159
- 238000003672 processing method Methods 0.000 title 1
- 238000003754 machining Methods 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000012530 fluid Substances 0.000 claims description 10
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 15
- 239000004745 nonwoven fabric Substances 0.000 abstract description 4
- 229920003002 synthetic resin Polymers 0.000 abstract description 4
- 239000000057 synthetic resin Substances 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 2
- 239000004744 fabric Substances 0.000 abstract description 2
- 239000006260 foam Substances 0.000 abstract description 2
- 239000002649 leather substitute Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 20
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- -1 polyethylene Polymers 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical class [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 235000012245 magnesium oxide Nutrition 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical class [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229940064004 antiseptic throat preparations Drugs 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- PPNAOCWZXJOHFK-UHFFFAOYSA-N manganese(2+);oxygen(2-) Chemical class [O-2].[Mn+2] PPNAOCWZXJOHFK-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013167116 | 2013-08-09 | ||
JPJP-P-2013-167116 | 2013-08-09 | ||
PCT/JP2014/070712 WO2015020082A1 (ja) | 2013-08-09 | 2014-08-06 | 研磨加工工具及び部材の加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20160041908A true KR20160041908A (ko) | 2016-04-18 |
Family
ID=52461413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020167002949A KR20160041908A (ko) | 2013-08-09 | 2014-08-06 | 연마 가공 공구 및 부재의 가공 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20160167192A1 (ja) |
EP (1) | EP3031577A4 (ja) |
JP (1) | JPWO2015020082A1 (ja) |
KR (1) | KR20160041908A (ja) |
CN (1) | CN105451938A (ja) |
TW (1) | TW201527048A (ja) |
WO (1) | WO2015020082A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180018890A (ko) * | 2016-08-09 | 2018-02-22 | 삼성디스플레이 주식회사 | 임프린트 마스터 템플릿 및 이의 제조 방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6292397B2 (ja) * | 2014-04-23 | 2018-03-14 | 富士紡ホールディングス株式会社 | 研磨パッド |
CN107073674B (zh) * | 2014-10-31 | 2020-01-21 | 株式会社荏原制作所 | 用于对工件进行研磨的化学机械研磨装置 |
CN106985059B (zh) * | 2017-04-27 | 2018-12-28 | 厦门大学 | 一种空心球体内外球面研抛方法及装置 |
JP6446590B1 (ja) * | 2018-08-09 | 2018-12-26 | 国立大学法人 東京大学 | 局所研磨加工方法、および局所研磨加工装置、並びに該局所研磨加工装置を用いた修正研磨加工装置 |
JP7093875B2 (ja) * | 2021-06-24 | 2022-06-30 | 一郎 片山 | ワーク加工装置、砥石、およびワーク加工方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE25620E (en) * | 1964-07-21 | Polishing synthetic resin lenses | ||
US1570177A (en) * | 1923-01-29 | 1926-01-19 | James B Pointer | Sanding block |
US3144737A (en) * | 1962-09-27 | 1964-08-18 | Bausch & Lomb | Aluminum foil lens grinding pad |
JPS5933587Y2 (ja) * | 1980-12-09 | 1984-09-19 | 昭和ソキ−株式会社 | 線材等の研削用砥石 |
JP2559650B2 (ja) * | 1991-11-27 | 1996-12-04 | 信越半導体株式会社 | ウエーハ面取部研磨装置 |
US5662515A (en) * | 1993-12-15 | 1997-09-02 | Evensen; Kenneth | Method and apparatus for abrading with a profiled soft roller |
JPH08267347A (ja) * | 1995-03-31 | 1996-10-15 | Shin Etsu Handotai Co Ltd | オリエンテーション・フラットを有するウエーハ面取り部の鏡面研磨方法とその装置 |
JPH11188590A (ja) | 1997-12-22 | 1999-07-13 | Speedfam Co Ltd | エッジポリッシング装置 |
JPH11320363A (ja) * | 1998-05-18 | 1999-11-24 | Tokyo Seimitsu Co Ltd | ウェーハ面取り装置 |
JP2000061792A (ja) * | 1998-08-14 | 2000-02-29 | Nikon Corp | 総形研削砥石 |
JP2001205549A (ja) | 2000-01-25 | 2001-07-31 | Speedfam Co Ltd | 基板エッジ部の片面研磨方法およびその装置 |
DE10004578C1 (de) * | 2000-02-03 | 2001-07-26 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante |
JP2004058186A (ja) * | 2002-07-26 | 2004-02-26 | Hitachi Zosen Corp | 薄板状ワーク外周部加工装置 |
US8075372B2 (en) * | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
JP2007088143A (ja) * | 2005-09-21 | 2007-04-05 | Elpida Memory Inc | エッジ研磨装置 |
EP2213415A1 (en) * | 2009-01-29 | 2010-08-04 | S.O.I. TEC Silicon | Device for polishing the edge of a semiconductor substrate |
CN201366642Y (zh) * | 2009-03-26 | 2009-12-23 | 常州工业技术玻璃有限公司 | 内圆磨轮 |
US20120315739A1 (en) * | 2010-02-26 | 2012-12-13 | Sumco Corporation | Manufacturing method for semiconductor wafer |
JP2012009550A (ja) * | 2010-06-23 | 2012-01-12 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
CN102441830A (zh) * | 2011-11-24 | 2012-05-09 | 上海腾企机械技术配套有限公司 | 切入式磨削/研磨/抛光加工内/外曲面新工艺及系统 |
JP5982971B2 (ja) * | 2012-04-10 | 2016-08-31 | 住友電気工業株式会社 | 炭化珪素単結晶基板 |
CN103128627B (zh) * | 2013-02-18 | 2016-06-08 | 洛阳轴研科技股份有限公司 | 一种球头销球头磨削加工方法及装置 |
JP2015196224A (ja) * | 2014-04-01 | 2015-11-09 | 株式会社フジミインコーポレーテッド | 研磨方法、及び保持具 |
-
2014
- 2014-08-06 CN CN201480044902.3A patent/CN105451938A/zh active Pending
- 2014-08-06 KR KR1020167002949A patent/KR20160041908A/ko not_active Application Discontinuation
- 2014-08-06 JP JP2015530920A patent/JPWO2015020082A1/ja active Pending
- 2014-08-06 EP EP14834968.1A patent/EP3031577A4/en not_active Withdrawn
- 2014-08-06 US US14/910,059 patent/US20160167192A1/en not_active Abandoned
- 2014-08-06 WO PCT/JP2014/070712 patent/WO2015020082A1/ja active Application Filing
- 2014-08-07 TW TW103127111A patent/TW201527048A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180018890A (ko) * | 2016-08-09 | 2018-02-22 | 삼성디스플레이 주식회사 | 임프린트 마스터 템플릿 및 이의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20160167192A1 (en) | 2016-06-16 |
EP3031577A1 (en) | 2016-06-15 |
WO2015020082A1 (ja) | 2015-02-12 |
JPWO2015020082A1 (ja) | 2017-03-02 |
EP3031577A4 (en) | 2017-03-22 |
TW201527048A (zh) | 2015-07-16 |
CN105451938A (zh) | 2016-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11833704B2 (en) | Dynamic regulation of contact pressures in a blade sharpening system | |
KR20160041908A (ko) | 연마 가공 공구 및 부재의 가공 방법 | |
JP5406890B2 (ja) | 2つの加工層をトリミングするための方法およびトリミング装置 | |
KR102252945B1 (ko) | 워크의 평면 연삭 방법 | |
CN1986151A (zh) | 一种超硬碳化硅陶瓷纳米镜面的磨削方法 | |
TW201529224A (zh) | 硏磨裝置及硏磨方法 | |
CN104942690B (zh) | 一种异形工件的弹性抛光设备以及方法 | |
KR200445915Y1 (ko) | 연마장치 | |
CN103878684B (zh) | 一种带有抛光功能的研磨盘 | |
JP2015196224A (ja) | 研磨方法、及び保持具 | |
JP5959284B2 (ja) | 曲面研磨方法および研磨装置 | |
JP2008110420A (ja) | 内面研削装置用砥石および内面研削方法 | |
TWI689378B (zh) | 研磨裝置,研磨構件的加工方法,研磨構件的修整方法,形狀加工用切削工具及表面修整用工具 | |
JP2016198878A (ja) | 砥石、加工装置、被加工物の加工方法 | |
US20180009084A1 (en) | Abrading Disc | |
JP4791291B2 (ja) | Cmpパッド | |
Suzuki et al. | Precision machining and measurement of micro aspheric molds | |
JP2005103668A (ja) | 自由曲面加工法及び装置 | |
JP2023139462A (ja) | 研削ホイール及び研削装置 | |
KR101296830B1 (ko) | 센터리스 연삭기용 드레서 | |
Jiao et al. | Research on Ultrasonic Aided Fixed-Abrasive Lapping Technology for Engineering Ceramics Cylindrical Part | |
Wang et al. | Polishing experiment study of the elastic coated abrasives | |
JP2005040899A (ja) | ダイヤモンド砥石 | |
JP2020531298A (ja) | 表面突起研磨パッド | |
Gleb et al. | Using magnetorheological methods to process optical items on a series of automated polishing–lapping machines |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |