KR20160016361A - 발광 다이오드 및 그 제조 방법 - Google Patents
발광 다이오드 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20160016361A KR20160016361A KR1020140100364A KR20140100364A KR20160016361A KR 20160016361 A KR20160016361 A KR 20160016361A KR 1020140100364 A KR1020140100364 A KR 1020140100364A KR 20140100364 A KR20140100364 A KR 20140100364A KR 20160016361 A KR20160016361 A KR 20160016361A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- electrode
- semiconductor layer
- emitting units
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 30
- 230000017525 heat dissipation Effects 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 208
- 239000006185 dispersion Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140100364A KR20160016361A (ko) | 2014-08-05 | 2014-08-05 | 발광 다이오드 및 그 제조 방법 |
| PCT/KR2015/008150 WO2016021919A1 (ko) | 2014-08-05 | 2015-08-04 | 발광 다이오드 및 그 제조 방법 |
| CN201580042254.2A CN106663723B (zh) | 2014-08-05 | 2015-08-04 | 发光二极管及其制造方法 |
| US15/501,815 US9923121B2 (en) | 2014-08-05 | 2015-08-04 | Light-emitting diode and manufacturing method therefor |
| US15/925,533 US10290772B2 (en) | 2014-08-05 | 2018-03-19 | Light-emitting diode and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140100364A KR20160016361A (ko) | 2014-08-05 | 2014-08-05 | 발광 다이오드 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20160016361A true KR20160016361A (ko) | 2016-02-15 |
Family
ID=55357115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020140100364A KR20160016361A (ko) | 2014-08-05 | 2014-08-05 | 발광 다이오드 및 그 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20160016361A (zh) |
| CN (1) | CN106663723B (zh) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170116296A (ko) * | 2016-04-08 | 2017-10-19 | 삼성전자주식회사 | 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널 |
| WO2018044102A1 (ko) * | 2016-09-05 | 2018-03-08 | 서울바이오시스주식회사 | 칩 스케일 패키지 발광 다이오드 |
| KR20180027004A (ko) * | 2016-09-05 | 2018-03-14 | 서울바이오시스 주식회사 | 칩 스케일 패키지 발광 다이오드 |
| KR20180083159A (ko) * | 2017-01-12 | 2018-07-20 | 삼성전자주식회사 | 플로팅 도전성 패턴을 포함하는 반도체 발광 소자 |
| KR101997104B1 (ko) * | 2018-02-21 | 2019-07-05 | 순천대학교 산학협력단 | 마이크로 어레이 발광 다이오드 및 이의 제조 방법 |
| CN110005997A (zh) * | 2017-12-29 | 2019-07-12 | Lg电子株式会社 | 使用半导体发光器件的车灯及其控制方法 |
| KR20210007065A (ko) * | 2019-07-09 | 2021-01-20 | 상하이 아스코어 테크놀로지 컴퍼니 리미티드 | 레이저 소자 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102499308B1 (ko) * | 2017-08-11 | 2023-02-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
| CN110192287B (zh) | 2017-12-22 | 2022-10-28 | 首尔伟傲世有限公司 | 芯片级封装发光二极管 |
| WO2019140625A1 (zh) * | 2018-01-19 | 2019-07-25 | 厦门市三安光电科技有限公司 | 发光二极管及其制作方法 |
| CN108807612A (zh) * | 2018-06-26 | 2018-11-13 | 山东浪潮华光光电子股份有限公司 | 一种发光二极管制备方法 |
| CN110797370B (zh) * | 2019-05-06 | 2022-06-24 | 深圳第三代半导体研究院 | 一种集成单元二极管芯片 |
| CN116053381A (zh) * | 2021-08-24 | 2023-05-02 | 厦门三安光电有限公司 | 倒装发光二极管及其制备方法 |
| CN114188454B (zh) * | 2021-12-03 | 2024-01-09 | 泉州三安半导体科技有限公司 | 紫外发光二极管及发光装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9111950B2 (en) * | 2006-09-28 | 2015-08-18 | Philips Lumileds Lighting Company, Llc | Process for preparing a semiconductor structure for mounting |
| US8124999B2 (en) * | 2008-07-18 | 2012-02-28 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making the same |
| US8084775B2 (en) * | 2010-03-16 | 2011-12-27 | Bridgelux, Inc. | Light sources with serially connected LED segments including current blocking diodes |
| KR101252032B1 (ko) * | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
| JP5333382B2 (ja) * | 2010-08-27 | 2013-11-06 | 豊田合成株式会社 | 発光素子 |
| KR101142965B1 (ko) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| KR101926361B1 (ko) * | 2012-06-13 | 2018-12-07 | 삼성전자주식회사 | 반도체 발광소자, 발광장치 및 반도체 발광소자 제조방법 |
-
2014
- 2014-08-05 KR KR1020140100364A patent/KR20160016361A/ko not_active Application Discontinuation
-
2015
- 2015-08-04 CN CN201580042254.2A patent/CN106663723B/zh active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170116296A (ko) * | 2016-04-08 | 2017-10-19 | 삼성전자주식회사 | 발광 다이오드 모듈 및 이를 구비한 디스플레이 패널 |
| WO2018044102A1 (ko) * | 2016-09-05 | 2018-03-08 | 서울바이오시스주식회사 | 칩 스케일 패키지 발광 다이오드 |
| KR20180027004A (ko) * | 2016-09-05 | 2018-03-14 | 서울바이오시스 주식회사 | 칩 스케일 패키지 발광 다이오드 |
| US10985206B2 (en) | 2016-09-05 | 2021-04-20 | Seoul Viosys Co., Ltd. | Chip-scale package light emitting diode |
| US11749707B2 (en) | 2016-09-05 | 2023-09-05 | Seoul Viosys Co., Ltd. | Chip-scale package light emitting diode |
| KR20180083159A (ko) * | 2017-01-12 | 2018-07-20 | 삼성전자주식회사 | 플로팅 도전성 패턴을 포함하는 반도체 발광 소자 |
| CN110005997A (zh) * | 2017-12-29 | 2019-07-12 | Lg电子株式会社 | 使用半导体发光器件的车灯及其控制方法 |
| KR101997104B1 (ko) * | 2018-02-21 | 2019-07-05 | 순천대학교 산학협력단 | 마이크로 어레이 발광 다이오드 및 이의 제조 방법 |
| KR20210007065A (ko) * | 2019-07-09 | 2021-01-20 | 상하이 아스코어 테크놀로지 컴퍼니 리미티드 | 레이저 소자 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106663723A (zh) | 2017-05-10 |
| CN106663723B (zh) | 2019-06-14 |
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| WITN | Withdrawal due to no request for examination |