KR20150126297A - Touch sensor and touch panel - Google Patents

Abstract

The present invention increases the detection sensitivity of a touch panel. Or, the present invention improves the visibility of the touch panel. Or, the present invention provides a flexible touch panel. Or, the present invention provides a touch panel having a thin thickness. Or, the present invention provides a lightweight touch panel. The configuration of the touch panel includes: a first substrate, a first conductive layer, a second conductive layer, and an insulation layer. The first conductive layer includes an area arranged between the first substrate and a second conductive layer. The insulation layer includes an area arranged between the first conductive layer and a second conductive layer. The first conductive layer, the second conductive layer, and the insulation layer forms a capacitor element. The second conductive layer includes an opening. The opening of the second conductive layer includes an area overlapping the first conductive layer.

Description

TOUCH SENSOR AND TOUCH PANEL [0002]

One aspect of the present invention relates to a touch sensor or a touch sensor having flexibility. Alternatively, one aspect of the present invention relates to a touch panel or a flexible touch panel.

However, one form of the present invention is not limited to the above technical field. An aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. An aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. More specifically, the present invention relates to a semiconductor device, a display device, a light emitting device, a storage device, a storage device, an electronic device, a lighting device, an input device, an input / output device, , Or a method of producing them may be mentioned as an example.

In the present specification and the like, a semiconductor device refers to a general device that can function by utilizing semiconductor characteristics. BACKGROUND ART [0002] Semiconductor devices, arithmetic devices, and storage devices, including semiconductor devices such as transistors, are a form of semiconductor devices. An image pickup device, a display device, a liquid crystal display device, a light emitting device, an electro-optical device, a power generation device (including a thin film solar cell, an organic thin film solar cell, and the like) and an electronic device may have a semiconductor device.

2. Description of the Related Art In recent years, display devices are expected to be used in various applications, and diversification is required. For example, development of a smart phone or a tablet terminal equipped with a touch panel as a portable information terminal is underway.

Patent Document 1 discloses a flexible active matrix type light emitting device having transistors and organic EL elements as switching elements on a film substrate.

Japanese Patent Application Laid-Open No. 2003-174153

A touch panel in which a function of inputting by touching a screen with a finger or a stylus as a user interface is added to the display panel is desired.

For example, the touch panel may be configured to provide a touch sensor on the viewing side of the display panel. The touch sensor provided on the touch panel is required to have a high detection sensitivity. In addition, since the touch sensor is provided so as to overlap with the display panel, the visibility may be lowered compared with the case where the touch sensor is not provided.

One of the problems of the present invention is to improve the detection sensitivity of the touch panel. Or to improve the visibility of the touch panel. Another object of the present invention is to provide a touch panel having a small thickness. Another object of the present invention is to provide a touch panel which bends. Alternatively, one of the tasks is to provide a light touch panel. Another object of the present invention is to provide a highly reliable touch panel.

Or to provide a new input device. Or to provide a new input / output device.

Further, the description of these tasks does not hinder the existence of other tasks. In addition, one aspect of the present invention does not need to solve all these problems. Further, all of the other problems are clarified from the description of the specification, the drawings, the claims, etc., and other problems can be extracted from the description of the specification, the drawings, the claims, and the like.

An aspect of the present invention is a touch sensor having a first substrate, a first conductive layer, a second conductive layer, and an insulating layer. The first conductive layer includes a region located between the first substrate and the second conductive layer. The insulating layer includes a region located between the first conductive layer and the second conductive layer. The first conductive layer, the second conductive layer and the insulating layer form a capacitive element. The second conductive layer has an opening. The opening of the second conductive layer and the first conductive layer include regions overlapping with each other.

Further, in the above configuration, it is preferable to have a first transistor electrically connected to the first conductive layer.

Another aspect of the present invention is a touch panel having the touch sensor, the second substrate, the display element, the first layer, and the second layer. The second substrate includes a region overlapping with the first substrate. Further, a display element, a first layer, and a second layer are provided between the first substrate and the second substrate. The first layer has a function of transmitting light of a specific wavelength band and includes a region overlapping with the display element. The second layer has a function of shielding visible light. The first conductive layer includes a region overlapping with the first layer and a region overlapping with the second layer. The second conductive layer includes a region overlapping with the second layer. The opening of the second conductive layer and the display element include a region overlapping with each other. Further, the opening of the second conductive layer and the first layer include regions overlapping with each other.

In the above configuration, the display element is preferably a light emitting element.

In the above configuration, it is preferable that the first substrate and the second substrate each have flexibility.

According to another aspect of the present invention, there is provided a touch sensor comprising a touch sensor and a first FPC (Flexible Printed Circuit), wherein the first FPC has a function of supplying a signal to at least one of the first conductive layer and the second conductive layer, Sensor module.

According to another aspect of the present invention, there is provided a touch panel, a second FPC, and a third FPC, wherein the second FPC has a function of supplying a signal to at least one of the first conductive layer and the second conductive layer, 3 FPC is a touch panel module that has a function to supply signals to the display device.

According to another aspect of the present invention, the touch sensor module or the touch panel module is an electronic device provided in the housing.

According to an aspect of the present invention, detection sensitivity of the touch panel can be improved. Or the visibility of the touch panel can be improved. Alternatively, a thin touch panel can be provided. Or a light touch panel. Alternatively, a highly reliable touch panel can be provided.

Alternatively, a new input device can be provided. Or a new input / output device. Also, the description of these effects does not preclude the presence of other effects. In addition, one form of the invention need not necessarily have all of these effects. Further, the effects other than these are obvious from the description of the specification, the drawings, the claims, and the like, and other effects can be extracted from the description of the specification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a configuration example of a touch panel module according to an embodiment; Fig.
2 is a diagram showing a configuration example of a laminated structure of a touch panel module according to an embodiment;
3 is a view showing a configuration example of a laminated structure of a touch panel module according to the embodiment;
4 is a view showing a configuration example of a laminated structure of a touch panel module according to the embodiment;
5 is a diagram showing a configuration example of a touch panel module according to the embodiment;
6 is a diagram showing a configuration example of a touch panel module according to the embodiment;
7 is a view showing a configuration example of a touch panel module according to the embodiment;
8 is a view showing a configuration example of a touch panel module according to the embodiment;
9 is a block diagram, a circuit diagram, and a timing chart of a touch panel according to the embodiment.
10 is a circuit diagram and a schematic diagram of the configuration of the touch panel according to the embodiment;
11 is a block diagram and a circuit diagram of the configuration of the touch panel according to the embodiment;
12 is a circuit diagram of the configuration of the touch panel according to the embodiment;
13 is a view showing a configuration example of a touch panel according to the embodiment;
14 is a view for explaining a method of driving a touch panel according to the embodiment;
15 is a view showing an electronic apparatus according to the embodiment;
16 is a view showing an electronic apparatus according to the embodiment;

Embodiments will be described in detail with reference to the drawings. It is to be understood, however, that the present invention is not limited to the following description, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention. Therefore, the present invention is not construed as being limited to the description of the embodiments described below.

In the following description of the present invention, the same reference numerals are used for the same portions or portions having the same functions in common between different drawings, and the repeated description thereof will be omitted. When a portion having the same function is indicated, the hatch pattern may be made the same, and there may be a case in which no special code is given.

In each of the drawings described in the present specification, the size, the layer thickness, or the area of each structure may be exaggerated for clarity. Therefore, it is not necessarily limited to the scale.

In this specification and the like, ordinal numbers such as 'first' and 'second' are used to avoid confusion of components, and are not limited to numerals.

A transistor is a type of semiconductor device, and can realize a switching operation for controlling current or voltage amplification, conduction or non-conduction. The transistor in this specification includes an IGFET (Insulated Gate Field Effect Transistor) or a thin film transistor (TFT: Thin Film Transistor).

In addition, the words 'membrane' and 'layer' can be interchanged depending on case or situation. For example, the term " conductive layer " may be replaced with the term " conductive film ". Or " insulating film " may be replaced with the term " insulating layer ".

(Embodiment 1)

In this embodiment, examples of configurations of a touch sensor, a touch sensor module having a touch sensor, a touch panel, and a touch panel module according to an embodiment of the present invention will be described. Hereinafter, the case where the capacitive touch sensor is applied as the touch sensor will be described.

In this specification and the like, a substrate provided with a touch sensor is provided with a connector such as FPC or TCP (Tape Carrier Package), or an IC (Integrated Circuit) is provided on a substrate by a COG In some cases, a directly mounted sensor is called a touch sensor module. In addition, a device having a function as a touch sensor and a function of displaying an image or the like is sometimes referred to as a touch panel (input / output device). In addition, the case where the connector is provided on the touch panel or the IC is mounted is called a touch panel module or simply a touch panel.

A capacitive touch sensor applicable to an embodiment of the present invention includes a capacitive element. The capacitor element may have a laminated structure including, for example, a first conductive layer, a second conductive layer, and an insulating layer therebetween. At this time, each of the first conductive layer and the second conductive layer functions as an electrode of the capacitor. Further, the insulating layer functions as a dielectric.

The first conductive layer of the first conductive layer and the second conductive layer is provided on the touch surface (detection surface) side. A touch sensor according to an embodiment of the present invention can detect a touch operation by detecting a capacitance formed between a detected object such as a finger or a stylus and the first conductive layer. Specifically, when there is a predetermined potential difference between the first conductive layer and the second conductive layer, the touch operation can be detected by detecting the potential change of the first conductive layer caused by the capacitance formed by the touch operation.

Here, it is preferable that the area of the first conductive layer is larger than the area of the second conductive layer in the region having the touch detection function among the touch sensors. As a result, the size of the capacitance between the first conductive layer and the second conductive layer can be reduced. Further, by increasing the electrode area of the first conductive layer, the capacitance formed between the to-be-monitored body and the first conductive layer can be increased. As a result, since the potential change of the first conductive layer at the time of touch operation is increased, the detection sensitivity can be increased.

For example, it is preferable to arrange the first conductive layer and the second conductive layer so that the second conductive layer has an opening, and the opening and the first conductive layer overlap with each other. The capacitance value formed between the first conductive layer and the second conductive layer can be easily changed without changing the thickness or material of the insulating layer by changing the number and area of the openings provided in the second conductive layer.

Further, a touch panel according to an embodiment of the present invention can be constructed by superimposing a touch sensor on a display panel having a pixel having a display element. At this time, since the opening of the second conductive layer is provided so as to overlap the display element, it is not necessary for the light from the display element to transmit through the second conductive layer, thereby improving the brightness and visibility of the image displayed by the touch panel . When the touch panel is provided with a color filter (also referred to as a colored layer) which overlaps with the display element and a light shielding layer provided between adjacent color filters, the second conductive layer is provided so as to overlap the light shielding layer, It is preferable to provide the opening of the conductive layer to overlap with the color filter.

At this time, it is preferable that the two substrates (the substrate for supporting the touch sensor and the substrate for supporting the display element) are arranged so as to face each other. The touch sensor included in the touch panel according to an embodiment of the present invention is less susceptible to the noise generated when driving the display element because the area of the second conductive layer disposed on the display element side is small. Therefore, even if the touch sensor and the display element are interposed between the two substrates, and they are arranged so as to be close to each other, the deterioration of the detection sensitivity can be suppressed. As a result, the thickness of the touch panel can be reduced. Particularly, by using a flexible material for a pair of substrates, a thin, light and flexible touch panel can be realized.

Hereinafter, a more specific configuration example of an embodiment of the present invention will be described with reference to the drawings.

[Configuration example]

1 (A) is a perspective view of a touch panel module 10 according to an embodiment of the present invention. 1 (B) is a perspective view of a strap when the touch panel module 10 is opened. The touch panel module 10 has a configuration in which the touch sensor module 20 and the display panel 30 are arranged to overlap with each other.

The touch sensor module 20 has a configuration in which an FPC 41 is provided on a touch sensor having a sensor element (also referred to as a detection element) 22 on a first substrate 21. A plurality of sensor elements 22 are arranged on the first substrate 21 in a matrix form. It is preferable that a circuit 23 and a circuit 24, which are electrically connected to the sensor element 22, are provided on the first substrate 21. A circuit having a function of selecting a plurality of sensor elements 22 can be applied to at least one of the circuit 23 and the circuit 24. [ A circuit having a function of outputting a signal from the sensor element 22 can be applied to at least one of the circuit 23 and the circuit 24. [ The FPC 41 has a function of supplying an external signal to at least one of the sensor element 22, the circuit 23, and the circuit 24. [ Alternatively, the FPC 41 has a function of outputting a signal from at least one of the sensor element 22, the circuit 23, and the circuit 24 to the outside.

The display panel 30 has a display portion 32 on a second substrate 31. The display section 32 has a plurality of pixels 33 arranged in a matrix form. It is preferable to have a circuit 34 electrically connected to the pixel 33 in the display portion 32 on the second substrate 31. [ The circuit 34 may be, for example, a circuit functioning as a gate driving circuit. The FPC 42 has a function of supplying an external signal to at least one of the display section 32 and the circuit 34. [ 1 (A) and 1 (B) show a configuration in which a terminal 43 is provided on the second substrate 31. In FIG. The terminal 43 may be provided with, for example, an FPC, or an IC functioning as a source driving circuit may be directly mounted by a COG method or a COF method, or an FPC, TAB, TCP, or the like on which an IC is mounted . A form in which a connector such as an IC or an FPC is mounted on the display panel 30 may be referred to as a display panel module.

The touch panel module 10 according to an embodiment of the present invention can output the position information according to the capacitance change when the touch operation is performed by the plurality of sensor elements 22. Further, an image can be displayed by the display section 32. [

[About the laminated structure of the touch panel]

Fig. 2 (A) is a schematic view showing an enlarged view of a region indicated by a broken line in Fig. 1 (A).

2A shows an example in which the capacitance element 110, the pixel 33, the wiring 25, and the wiring 26 of the sensor element 22 shown in FIG. 1A are provided.

The plurality of capacitive elements 110 are arranged in a matrix form. The wiring 25 is arranged between two adjacent capacitive elements 110 and the wiring 26 is arranged in plural in the direction intersecting with the wiring 25.

A plurality of pixels 33 are arranged in a matrix form. Some of the plurality of pixels 33 are provided so as to overlap with the capacitive element 110 and the other portion thereof is provided to overlap with an area between two adjacent capacitive elements 110. [

The pixel 33 has at least a display element. As the display element, for example, a light emitting element such as an organic EL (Electro Luminescence) element is preferably used. In addition, a display element (also referred to as an electronic ink) that performs display by an electrophoresis method, an electronic powder liquid, an electronic liquid powder (registered trademark) method, or an electrowetting method, a shutter type MEMS display element, Various display elements such as a light interference type MEMS display element and a liquid crystal element can be used as a display element.

In addition, the present invention can be applied to a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct viewing type liquid crystal display, and the like. When a semi-transmissive liquid crystal display or a reflective liquid crystal display is realized, a part or the whole of the pixel electrode may have a function as a reflective electrode. For example, some or all of the pixel electrodes may include aluminum, silver, and the like. In this case, it is also possible to provide a storage circuit such as SRAM under the reflective electrode. As a result, the power consumption can be further reduced. Further, a configuration suitable for a display element to be applied can be selected from various pixel circuits and used.

FIG. 2B is a schematic view in which a stacked structure of regions overlapping with the capacitive element 110 is developed. 2B, a first conductive layer 111, an insulating layer 112, a second conductive layer 113, and a light shielding layer 113 are formed between the first substrate 21 and the second substrate 31, A layer 115, a colored layer 114r, a colored layer 114g, a colored layer 114b, and a pixel 33 are arranged.

In the following description, the coloring layer 114r, the coloring layer 114g, and the coloring layer 114b are not distinguished from each other, and when they are described in common, the coloring layer 114 may be simply referred to as a coloring layer 114. [

An insulating layer 112 is interposed between the first conductive layer 111 and the second conductive layer 113, and these constitute the capacitor element 110.

Each coloring layer 114 has a function of transmitting light in a specific wavelength band. Here, the colored layer 114r transmits red light, the colored layer 114g transmits green light, and the colored layer 114b transmits blue light. Only one of the pixel 33 and the coloring layer 114 overlaps with each other so that only light of a specific wavelength band from the pixel 33 can be transmitted to the first substrate 21 side.

The light shielding layer 115 has a function of shielding visible light. The light shielding layer 115 is disposed so as to overlap with an area between two adjacent coloring layers 114. 2B shows an example in which the light shielding layer 115 has a shape having an opening and the opening is arranged so as to overlap with the pixel 33 and the colored layer 114. [

2B shows a structure in which the light shielding layer 115 is disposed on the first substrate 21 side with respect to the colored layer 114. The light shielding layer 115 may be provided on the first substrate 21 side The coloring layer 114 may be disposed.

The first conductive layer 111 and the insulating layer 112 include regions overlapping with the pixel 33 and the colored layer 114, respectively. Therefore, as the first conductive layer 111 and the insulating layer 112, it is preferable to use a material that transmits visible light, respectively.

The second conductive layer 113 has a plurality of openings 118. Thus, the area where the first conductive layer 111 and the second conductive layer 113 are overlapped with each other can be reduced. 2 (B), it is preferable that the second conductive layer 113 is arranged so that the opening 118 overlaps with the pixel 33. In this case, as shown in Fig. It is preferable that the second conductive layer 113 is disposed so as to overlap with the light shielding layer 115. As a result, the light from the pixel 33 is emitted to the first substrate 21 side without passing through the second conductive layer 113, so that the decrease in brightness can be suppressed and a touch panel having better visibility can be realized. In addition, since the light extraction efficiency is improved, a touch panel with low power consumption can be realized.

3A to 3C show examples of the shape of the second conductive layer 113 and the light shielding layer 115 in the region overlapping the display portion 32. FIG.

The upper surface of the opening 118 of the second conductive layer 113 and the upper surface of the opening of the light shielding layer 115 may be substantially aligned with each other as shown in Fig. 3B, the size of the opening 118 of the second conductive layer 113 is larger than that of the light shielding layer 115 so that the second conductive layer 113 is positioned inside the light shielding layer 115. [ Or may have a shape larger than the size of the opening of the opening 115. As a result, the influence of the relative positional shift of the second conductive layer 113 and the light shielding layer 115 can be reduced. 3 (C), the size of the opening 118 is larger than the opening of the light shielding layer 115 so that a portion not overlapping the light shielding layer 115 is formed in the second conductive layer 113. [ As shown in Fig. With this structure, the width of the second conductive layer 113 can be increased, and the conductivity can be increased. In addition, the thickness of the second conductive layer 113 can be reduced. When the second conductive layer 113 is thin, it is possible to make the second conductive layer 113 hardly visible when viewed from the first substrate 21 side.

In addition, when a material that transmits visible light through the second conductive layer 113 is used, it is difficult to visually recognize the first conductive layer 113 from the first substrate 21 side.

3 (A) and 3 (B), when the second conductive layer 113 is disposed so as not to be viewed as the light shielding layer 115, the second conductive layer 113 may be formed from the pixel 33 A light-shielding conductive material such as a metal or an alloy may be used in addition to the conductive material having light-transmitting properties. In particular, by using a low-resistance conductive material, it is possible to reduce the wiring resistance and is suitable for a large-sized touch panel.

Fig. 4 shows a case where the optical adjusting layer 119 is disposed between two adjacent first conductive layers 111. Fig.

By providing the optical adjustment layer 119, the pattern of the first conductive layer 111 becomes less visible when viewed from the first substrate 21 side, and therefore the display quality can be improved.

As the optical adjusting layer 119, a material having optical properties (transmittance, refractive index, reflectance, etc.) close to that of the first conductive layer 111 can be used. For example, a material whose transmittance is within ± 5% of the transmittance of the first conductive layer 111 can be used. Particularly, it is preferable to use the same material as the first conductive layer 111 for the optical adjustment layer 119. In this case, if the first conductive layer 111 and the optical adjusting layer 119 are formed at the same time by processing the same conductive film, the film thicknesses can be made equal and the process can be simplified, which is preferable.

When a conductive material is used as the optical adjusting layer 119, it is preferable that the optical adjusting layer 119 is capable of supplying a predetermined potential. For example, a configuration may be employed in which a fixed potential such as a common potential or a ground potential is supplied to the optical adjustment layer 119. Alternatively, the first conductive layer 111 and the second conductive layer 113 may be electrically connected to each other.

5A shows an example of the top surface shape of the wiring 25, the wiring 26, the first conductive layer 111, and the optical adjusting layer 119 as viewed from the first substrate 21 side Respectively.

As shown in Fig. 5 (A), it is preferable that the wiring 25 and the plurality of wirings 26 each include a conductive layer obtained by processing the same conductive film. At this time, it is preferable to use a conductive layer provided on the side of the first substrate 21 most. Thereby, the distance in the thickness direction between the wiring 25 or the wiring 26 and the first conductive layer 111 can be increased. As a result, the parasitic capacitance generated between each wiring and the first conductive layer 111 can be reduced, and the detection sensitivity can be increased.

In the portion where the wiring 25 and the wiring 26 intersect with each other, the wiring 26 includes the conductive layer 117 provided on the side opposite to the first substrate 21 of the wiring 25 via the insulating layer, And an opening provided in the insulating layer. At this time, if the optical adjusting layer 119, the first conductive layer 111, and the like are not disposed in a region overlapping with the conductive layer 117, the parasitic capacitance caused by the wiring 26 is reduced, It is preferable.

5B shows a configuration example in which the transistor 120 including the semiconductor layer 121 is provided. It is preferable to arrange a light shielding layer such as a conductive layer constituting the wiring 26 or the like on the first substrate 21 side rather than the semiconductor layer 121 as shown in Fig. At this time, a part of the wiring 26 can function as a gate electrode of the transistor. As a result, since the external light transmitted through the first substrate 21 is not irradiated to the semiconductor layer 121, variations in the electrical characteristics of the transistor can be suppressed. Particularly, since the portion overlapping with the display portion 32 is easily affected by external light, it is preferable to apply such a structure to the transistor provided here.

[Example of sectional configuration]

Hereinafter, an example of a sectional configuration of the touch panel module 10 will be described.

[Cross-sectional configuration example 1]

6 (A) is a schematic cross-sectional view of a touch panel module according to an embodiment of the present invention. The touch panel module shown in Fig. 6A has an active matrix type touch sensor and a display element between a pair of substrates, so that the touch panel module can be made thin. In this specification and the like, a touch sensor having a plurality of sensor elements each having an active element is called an active matrix type touch sensor.

The touch panel module has a structure in which the first substrate 21 and the second substrate 31 are bonded together by an adhesive layer 220. A capacitor element 110, a transistor 251, a transistor 252, a contact portion 253, a colored layer 114, a light shielding layer 115, and the like are provided on the side of the second substrate 31 of the first substrate 21 . A transistor 201, a transistor 202, a transistor 203, a light emitting element 204, a contact portion 205, and the like are provided on the second substrate 31.

An insulating layer 212, an insulating layer 213, an insulating layer 214, an insulating layer 215, an insulating layer 216, an insulating layer 217, and an insulating layer 212 are formed on the second substrate 31 with an adhesive layer 211 interposed therebetween. An insulating layer 218, a spacer 219, a conductive layer 225, and the like are provided.

A light emitting element 204 is provided on the insulating layer 217. The light emitting element 204 has a first electrode 221, an EL layer 222, and a second electrode 223 (see FIG. 6B). An optical adjustment layer 224 is provided between the first electrode 221 and the EL layer 222. [ The insulating layer 218 is provided so as to cover the ends of the first electrode 221 and the optical adjustment layer 224.

FIG. 6A shows a configuration in which the pixel 33 includes the current control transistor 201 and the switching control transistor 202. FIG. One of the source and the drain of the transistor 201 is electrically connected to the first electrode 221 through the conductive layer 225.

FIG. 6A shows a configuration in which the transistor 203 is provided in the circuit 34. FIG.

6A shows an example in which a semiconductor layer in which a channel is formed as a transistor 201 and a transistor 203 is interposed between two gate electrodes. Such a transistor can increase the electric field effect mobility as compared with other transistors, and can increase on current. As a result, a circuit capable of high-speed operation can be manufactured. Further, the area occupied by the circuit portion can be reduced. By applying the transistor having a large on-current, it is possible to reduce the signal delay in each wiring and to suppress display irregularities even if the number of wiring increases when the display panel or the touch panel is made large or fine .

The transistor included in the circuit 34 and the transistor included in the pixel 33 may have the same structure. The transistors included in the circuit 34 may all have the same structure or may have different structures. The transistors included in the pixel 33 may all have the same structure or may have different structures. The transistors (transistor 251, transistor 252, etc.) provided on the first substrate 21 side may all have the same structure or different structures.

6A shows an example in which a light emitting element having a top emission structure is used as the light emitting element 204. In this case, The light emitting element 204 emits light to the second electrode 223 side. The transistor 202, the capacitor, and the wiring are arranged on the second substrate 31 side of the light emitting element 204 so as to overlap with the light emitting region of the light emitting element 204, The aperture ratio can be increased.

An insulating layer 262, an insulating layer 263, an insulating layer 264, an insulating layer 265, a first conductive layer 262, and an insulating layer 264 are formed on the second substrate 31 side of the first substrate 21 with an adhesive layer 261 interposed therebetween. An insulating layer 112, a second conductive layer 113, an insulating layer 266, a colored layer 114, a light shielding layer 115, and the like. An overcoat 267 covering the colored layer 114 and the light shielding layer 115 may also be provided.

The first conductive layer 111 is electrically connected to one of a source and a drain of the transistor 251.

The second conductive layer 113 is provided on the second substrate 31 side of the insulating layer 112. The second conductive layer 113 has openings 118. The second conductive layer 113 is provided so as to overlap the light shielding layer 115. The opening 118 of the second conductive layer 113 is provided so as to overlap with the colored layer 114.

The light emitting region of the light emitting device 204 and the coloring layer 114 are provided so as to overlap with each other and the light emitted from the light emitting device 204 is transmitted through the coloring layer 114 and emitted to the first substrate 21 side. Since the opening 118 of the second conductive layer 113 is provided so as to overlap the colored layer 114 and the emitted light does not need to pass through the second conductive layer 113, Can be suppressed from being lowered.

By using a flexible material for the first substrate 21 and the second substrate 31, a flexible touch panel can be realized.

In addition, a color filter method is used for a touch panel according to an embodiment of the present invention. For example, one color may be represented by the three color pixels to which the color R (red), G (green), or B (blue) is applied as the coloring layer 114. In addition to these, a configuration in which pixels of W (white) or Y (yellow) are applied may be used.

Light having high color purity can be extracted from the touch panel according to an embodiment of the present invention by the combination of the micro-cavity structure by the coloring layer 114 and the optical adjustment layer 224. [ The thickness of the optical adjustment layer 224 may be different depending on the color of each pixel. Further, depending on the pixel, the optical adjustment layer 224 may not be provided.

As the EL layer 222 of the light emitting element 204, it is preferable to apply an EL layer that emits white light. By applying such a light emitting element 204, it is not necessary to separately form the EL layer 222 of each pixel, so that it is possible to reduce the cost, and it is easy to make the EL layer 222 more flexible. Further, by changing the thickness of the optical adjustment layer 224 of each pixel, it is possible to extract luminescence of a wavelength suitable for each pixel, thereby increasing the color purity. Alternatively, the EL layer 222 of each pixel may be separately formed. In this case, the structure may be such that the optical adjusting layer 224 and the coloring layer 114 are not used.

An opening is provided in each insulating layer or the like located in a region overlapping with the contact portion 205 provided on the second substrate 31 and the contact portion 205 and the FPC 41 are electrically connected. The contact portions 253 and the FPCs 42 are electrically connected to each other through the connection layer 210 disposed in the openings, Respectively.

6A shows a structure in which the contact portion 205 has a conductive layer formed by processing the same conductive film as the source electrode and the drain electrode of the transistor. The contact portion 253 is formed of a conductive layer formed by processing the same conductive film as the gate electrode of the transistor, a conductive layer formed by processing the same conductive film as the source electrode and the drain electrode of the transistor, And a laminated structure of a conductive layer formed by processing a conductive film. In this manner, by forming the contact portion to have a laminated structure of a plurality of conductive layers, not only the electrical resistance can be reduced but also the mechanical strength can be increased, which is preferable.

As the connection layer 210 and the connection layer 260, an anisotropic conductive film (ACF), anisotropic conductive paste (ACP), or the like can be used.

The insulating layer 212 and the insulating layer 262 are preferably made of a material that is less likely to be impurities such as water or hydrogen. That is, the insulating layer 212 and the insulating layer 262 can function as a barrier film. With this structure, even when a material having moisture permeability is used as the first substrate 21 or the second substrate 31, it is possible to prevent diffusion of impurities from the outside to the light emitting element 204 and each transistor Can be effectively suppressed, and a highly reliable touch panel can be realized.

[For each component]

Hereinafter, each of the above-described components will be described.

The transistor has a conductive layer functioning as a gate electrode, a semiconductor layer, a conductive layer functioning as a source electrode, a conductive layer functioning as a drain electrode, and an insulating layer functioning as a gate insulating layer. 6A shows a case in which a transistor having a bottom gate structure is applied.

The structure of the transistor included in the touch panel according to an embodiment of the present invention is not particularly limited. For example, it may be a staggered transistor or a reverse staggered transistor. Further, the transistor may have either of a top-gate type and a bottom-gate type. The semiconductor material used for the transistor is not particularly limited, and examples thereof include an oxide semiconductor, silicon, and germanium.

The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor, a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystal region in part) may be used. Use of a semiconductor having crystallinity is preferable because deterioration of transistor characteristics is suppressed.

As the semiconductor material used for the transistor, for example, a Group 4 element, a compound semiconductor, or an oxide semiconductor may be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be applied.

In particular, it is preferable to apply an oxide semiconductor to the semiconductor in which the channel of the transistor is formed. In particular, it is preferable to apply an oxide semiconductor having a band gap larger than that of silicon. Use of a semiconductor material having a larger bandgap than silicon and a smaller carrier density is preferable because the current in the OFF state of the transistor can be reduced.

For example, the oxide semiconductor preferably includes at least indium (In) or zinc (Zn). More preferably, the oxide includes an oxide represented by an In-M-Zn based oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce or Hf).

In particular, the semiconductor layer has a plurality of crystal portions, and the crystal portion has an oxide semiconductor film in which the c-axis is oriented substantially perpendicular to the surface of the semiconductor layer or the upper surface of the semiconductor layer, and no grain boundary is observed between adjacent crystal portions Is preferably used.

Since such an oxide semiconductor does not have a grain boundary, cracks are prevented from being generated in the oxide semiconductor film due to stress when the display panel is warped. Therefore, it is possible to suitably use such an oxide semiconductor as a flexible and flexible touch panel.

Further, by using such an oxide semiconductor as the semiconductor layer, variations in electric characteristics are suppressed and a transistor with high reliability can be realized.

In addition, since the off current is low, the charge accumulated in the capacitor through the transistor can be maintained for a long time. By applying such a transistor to a pixel, it becomes possible to stop the driving circuit while maintaining the gradation of the image displayed in each display area. As a result, a display device in which power consumption is greatly reduced can be realized.

Alternatively, it is preferable to use silicon as the semiconductor in which the channel of the transistor is formed. Amorphous silicon may be used as silicon, but it is particularly preferable to use silicon having crystallinity. For example, it is preferable to use microcrystalline silicon, polycrystalline silicon, single crystal silicon or the like. In particular, polycrystalline silicon can be formed at a lower temperature than monocrystalline silicon, and has higher field effect mobility and reliability than amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. Further, even when the pixels are arranged at a very high density, the gate driving circuit and the source driving circuit can be formed on the same substrate as the pixel, and the number of parts constituting the electronic device can be reduced.

In addition to the gate, source, and drain of the transistor, materials that can be used for conductive layers such as various wirings and electrodes constituting the touch panel include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, Rut, or tungsten, or an alloy containing any of them as a main component is used as a single layer structure or a laminate structure. For example, a single-layer structure of an aluminum film including silicon, a two-layer structure of stacking an aluminum film on a titanium film, a two-layer structure of stacking an aluminum film on a tungsten film, and a two-layer structure of stacking a copper film on a copper- magnesium- , A two-layer structure in which a copper film is laminated on a titanium film, a two-layer structure in which a copper film is laminated on a tungsten film, an aluminum film or a copper film is laminated on a titanium film or a titanium nitride film, and a titanium film or a titanium nitride film is further formed thereon A three-layer structure in which an aluminum film or a copper film is stacked on a three-layer structure, a molybdenum film or a molybdenum nitride film, and a molybdenum decontamination film or a molybdenum disbonded film is further formed thereon. Further, a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used. Use of copper containing manganese is preferable because shape control by etching is improved.

As the conductive material having translucency, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide added with gallium, or graphene may be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium or an alloy material containing this metal material may be used. Alternatively, a nitride of the metal material (for example, titanium nitride) may be used. When a metal material or an alloying material (or nitride thereof) is used, it may be made thin enough to have transparency. In addition, a laminated film of the above material can be used as the conductive layer. For example, it is preferable to use a lamination film of an alloy of silver and magnesium and indium tin oxide or the like because the conductivity can be increased.

As the insulating material that can be used for each of the insulating layers, the overcoat 267, and the spacer 219, for example, a resin such as acrylic or epoxy, a resin having a siloxane bond, silicon oxide, silicon oxynitride, silicon nitride oxide, An inorganic insulating material such as silicon or aluminum oxide may also be used.

Further, as described above, it is preferable that the light emitting element is provided between a pair of insulating films having low water permeability. This makes it possible to suppress the entry of impurities such as water into the light emitting element, thereby suppressing the reliability of the light emitting device from deteriorating.

Examples of the insulating film having a low water permeability include a film containing nitrogen and silicon such as a silicon nitride film and a silicon nitride oxide film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Further, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

For example, the water vapor permeation amount of the low water-permeable insulating layer is ^{1 × 10 -5 [g / (} m 2 · day)] or less, preferably ^{1 × 10 -6 [g / (} m 2 · day)] or less, more preferably at most 1 × 10 ^-7 [g / (day · m ^2)], more preferably at most 1 × 10 ^-8 [g / (day · m ^2)].

As each adhesive layer, a curable resin such as a thermosetting resin, a photo-curing resin, and a two-component type curing resin can be used. For example, resins such as acryl, urethane, epoxy, or resins having siloxane bonds can be used.

The EL layer 222 has at least a light emitting layer. The EL layer 222 is a layer other than the light emitting layer. The EL layer 222 may be formed of a material having a high hole injecting property, a hole transporting material, a hole blocking material, a material having a high electron transporting property, a material having high electron injecting property, or a bipolar material A material having high hole transportability), and the like.

The EL layer 222 may be either a low molecular weight compound or a high molecular weight compound or may contain an inorganic compound. The layers constituting the EL layer 222 can be formed by a deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.

Examples of the material usable for the light-shielding layer 115 include carbon black, a metal oxide, and a complex oxide containing a solid solution of a plurality of metal oxides.

Examples of the material usable for the coloring layer 114 include a metal material, a resin material, a resin material containing a pigment or a dye, and the like.

[Production method example]

Here, a method of manufacturing a flexible touch panel will be described.

For convenience, a configuration including a pixel or a circuit, a configuration including an optical member such as a color filter, or a configuration including a touch sensor is referred to as an element layer. The element layer includes, for example, a display element and may include elements other than the display element, such as a wiring, a transistor used in a pixel or a circuit, and the like, which are electrically connected to the display element.

Here, a support (for example, the first substrate 21 or the second substrate 31) having an insulating surface on which an element layer is formed will be referred to as a substrate.

As a method of forming an element layer on a substrate having a flexible insulating surface, there are a method of forming an element layer directly on the substrate, a method of forming an element layer on a supporting substrate having rigidity, There is a method in which the substrate is peeled off and the element layer is transferred to the substrate.

In the case where the material constituting the substrate has heat resistance to the heat applied in the step of forming the element layer, formation of the element layer directly on the substrate is preferable because the process is simplified. At this time, formation of the element layer with the substrate fixed to the supporting substrate is preferable because the transport in the apparatus and between the apparatus becomes easy.

In addition, when the element layer is formed on the supporting substrate and then transferred to the substrate, a peeling layer and an insulating layer are laminated on the supporting substrate, and an element layer is formed on the insulating substrate. Subsequently, the supporting substrate and the element layer are peeled off and transferred to the substrate. At this time, it is preferable to select a material from which the interface between the supporting substrate and the peeling layer, the interface between the peeling layer and the insulating layer, or the peeling occurs in the peeling layer.

For example, a layer in which a layer containing a refractory metal material such as tungsten or the like and a layer containing an oxide of the above-described metal material are laminated as a release layer and a plurality of layers of a silicon nitride layer or a silicon oxynitride layer are laminated on the release layer . The use of a refractory metal material is preferable because it increases the degree of freedom in forming the element layer.

The peeling may be performed by applying a mechanical force, etching the peeling layer, or dropping a liquid onto a part of the peeling interface to permeate the entire peeling interface. Or peeling may be carried out by applying heat to the peeling interface and using the difference in thermal expansion coefficient.

In addition, when peeling is possible at the interface between the supporting substrate and the insulating layer, it is not necessary to provide a peeling layer. For example, glass is used as a supporting substrate, an organic resin such as polyimide is used as an insulating layer, and a part of the organic resin is locally heated by laser light or the like to form a starting point of peeling, Peeling may be performed at the interface. Alternatively, a metal layer may be provided between the supporting substrate and the insulating layer made of the organic resin, and current may be applied to the metal layer to separate the insulating layer from the interface between the metal layer and the insulating layer. At this time, an insulating layer made of an organic resin can be used as a substrate.

Examples of the substrate having flexibility include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin and polyvinyl chloride resin. Particularly, it is preferable to use a material having a low coefficient of thermal expansion. For example, polyamideimide resin, polyimide resin, PET or the like having a thermal expansion coefficient of 30 x 10 < ^-6 > Further, a substrate (impregnated with a resin) impregnated with a resin (also referred to as a prepreg) or a substrate having a thermal expansion coefficient lowered by mixing an inorganic filler with an organic resin may be used.

When the above-mentioned materials include a fibrous body, high-strength fibers of an organic compound or an inorganic compound are used as the fibrous body. The high-strength fiber refers to a fiber having a high tensile elastic modulus or a Young's modulus. Typical examples of the high-strength fiber include a polyvinyl alcohol fiber, a polyester fiber, a polyamide fiber, a polyethylene fiber, an aramid fiber Fiber, polyparaphenylene benzobisoxazole fiber, glass fiber, or carbon fiber. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like. They may be used in the form of a woven or nonwoven fabric, and a structure in which the resin is impregnated with the resin to cure the resin may be used as a flexible substrate. Use of a structure made of a fibrous body and a resin as the substrate having flexibility is preferable because reliability against breakage due to bending or local pressurization is improved.

Alternatively, glass, metal, or the like thin enough to have flexibility may be used for the substrate. Alternatively, a composite material in which glass and a resin material are bonded may be used.

For example, in the case of the configuration shown in FIG. 6A, a first peeling layer and an insulating layer 262 are sequentially formed on a first supporting substrate, and a structure above these is formed. Separately, a second peelable layer and an insulating layer 212 are sequentially formed on the second supporting substrate, and then a structure above these is formed. Next, the first supporting substrate and the second supporting substrate are bonded together by the adhesive layer 220. Thereafter, the second supporting substrate and the second peeling layer are removed by peeling off from the interface between the second peeling layer and the insulating layer 212, and the insulating layer 212 and the second substrate 31 are bonded to each other by the adhesive layer 211 . The first supporting substrate and the first peeling layer are removed by peeling at the interface between the first peeling layer and the insulating layer 262 and the insulating layer 262 and the first substrate 21 are bonded to each other by the adhesive layer 261 do. Either of peeling and joining may be performed first.

Here is a description of a method of manufacturing a flexible touch panel.

[Example of sectional configuration 2]

Fig. 7 shows an example of a sectional configuration different from that of Fig. 6 in part. The configuration shown in Fig. 7 differs from the configuration shown in Fig. 6 in the configuration of the first conductive layer 111 mainly in different points.

7 shows a case where a first conductive layer 111a having a semiconductor layer formed by processing the same film as the semiconductor layer of the transistor 251 and the transistor 252 is used in place of the first conductive layer 111 in FIG. Respectively. The first conductive layer 111a is provided in contact with the insulating layer 265. [

Here, the first conductive layer 111a preferably includes an oxide semiconductor. The oxide semiconductor is a semiconductor material capable of controlling the resistance by the oxygen deficiency in the film and / or the impurity concentration such as hydrogen or water. Therefore, even when the semiconductor layer to be applied to the first conductive layer 111a and the semiconductor layer to be applied to the transistor are formed by processing the same semiconductor film, the processing of increasing the oxygen deficiency and / or the impurity concentration in each semiconductor layer, Or a process of reducing the oxygen deficiency and / or the impurity concentration is selectively performed, whereby the resistivity of these semiconductor layers can be controlled.

Specifically, the oxide semiconductor layer included in the first conductive layer 111a functioning as an electrode of the capacitor device 110 is subjected to plasma treatment to increase the oxygen deficiency in the oxide semiconductor layer. And / or by increasing impurities such as hydrogen and water in the oxide semiconductor layer, the first conductive layer 111a including the oxide semiconductor having high carrier density and low resistance can be obtained. Further, an insulating film containing hydrogen (insulating layer 265) is formed so as to be in contact with the oxide semiconductor layer, and hydrogen is diffused from the insulating film containing hydrogen to the oxide semiconductor layer, . The oxide semiconductor layer may be applied to the first conductive layer 111a.

On the other hand, an insulating layer 264 is provided on the transistor 251 or the transistor 252 so that the oxide semiconductor layer is not exposed to the plasma treatment. Further, by providing the insulating layer 264, the insulating layer 265 including hydrogen and the oxide semiconductor layer can be prevented from contacting each other. By using an insulating film capable of emitting oxygen as the insulating layer 264, oxygen can be supplied to the oxide semiconductor layer of the transistor. The oxide semiconductor layer to which oxygen has been supplied becomes an oxide semiconductor layer having a high resistance by reducing the oxygen deficiency in the film or at the film interface. As the insulating film capable of emitting oxygen, for example, a silicon oxide film, a silicon oxynitride film, or the like can be used.

As the plasma treatment to be performed on the oxide semiconductor layer, a plasma treatment using a gas including a rare gas (He, Ne, Ar, Kr, Xe), phosphorus, boron, hydrogen, have. More specifically, plasma treatment in an Ar atmosphere, plasma treatment in a mixed gas atmosphere of Ar and hydrogen, plasma treatment in an ammonia atmosphere, plasma treatment in a mixed gas atmosphere of Ar and ammonia, or plasma treatment in a nitrogen atmosphere can be given .

By the plasma treatment, oxygen deficiency is formed in the oxide semiconductor layer in the lattice where the oxygen is removed (or the oxygen-removed portion). The oxygen deficiency may be a factor for generating a carrier. Further, hydrogen is supplied from the insulating layer in contact with the oxide semiconductor layer, more specifically, the insulating layer in contact with the lower side or the upper side of the oxide semiconductor layer. When hydrogen enters the oxygen vacancies, electrons as carriers are sometimes generated. Therefore, the oxide semiconductor layer applied to the first conductive layer 111a having increased oxygen deficiency due to the plasma treatment has a higher carrier density than the oxide semiconductor layer applied to the transistor.

On the other hand, the oxide semiconductor layer to be applied to the transistor in which the oxygen deficiency is reduced and the hydrogen concentration is reduced can be said to be an oxide semiconductor layer which is highly purity or is made substantially pure. Here, substantially intrinsic means that the carrier density of the oxide semiconductor is less than 1 x 10 ¹⁷ / cm ³ , preferably less than 1 x 10 ¹⁵ / cm ³ , more preferably less than 1 x 10 ¹³ / cm ³ . Alternatively, a substance having a low impurity concentration and a low defect level density (less oxygen deficiency) is called high purity intrinsic or substantially high purity intrinsic. Oxide semiconductors having high purity intrinsic characteristics or substantially high purity intrinsic properties can reduce the carrier density because they have fewer carrier generation sources. Therefore, the transistor in which the channel region is formed in the oxide semiconductor film tends to become an electrical characteristic (also referred to as a normally-off characteristic) in which the threshold voltage becomes positive. In addition, since the oxide semiconductor layer of high purity intrinsic or substantially high purity is low in defect level density, the trap level density can be reduced.

The oxide semiconductor layer of high purity intrinsic or substantially high purity has a considerably small off current, and even if the channel width is 1 x 10 ⁶ m and the channel length (L) is 10 m, the voltage between the source electrode and the drain electrode ) Is in the range of 1 V to 10 V, the off current is less than or equal to the measurement limit of the semiconductor parameter analyzer, that is, 1 × 10 ^-13 A or less. Therefore, the transistor 251, the transistor 252, or the like in which the channel region is formed in the oxide semiconductor layer is less likely to fluctuate in electric characteristics and becomes a transistor with high reliability. It is preferable to apply the same oxide semiconductor layer to the transistor 201, the transistor 202, and the transistor 203 provided on the second substrate 31 side.

7, the insulating layer 264 is provided so as to selectively remove a region overlapping the first conductive layer 111a functioning as an electrode of the capacitive element 110. In addition, The insulating layer 265 may be formed to contact the first conductive layer 111a and then removed from the first conductive layer 111a. As the insulating layer 265, hydrogen can be supplied to the first conductive layer 111a, for example, by using an insulating film containing hydrogen, in other words, an insulating film capable of releasing hydrogen, typically a silicon nitride film. It is preferable that the insulating film capable of emitting hydrogen has a concentration of hydrogen contained in the film of 1 x 10 ²² atoms / cm ³ or more. By forming such an insulating film so as to be in contact with the first conductive layer 111a, it is possible to effectively contain hydrogen in the first conductive layer 111a. In this manner, in addition to the above-described plasma treatment, the resistance of the oxide semiconductor layer can be arbitrarily adjusted by changing the configuration of the insulating film in contact with the oxide semiconductor layer. In addition, a layer including an oxide semiconductor which is sufficiently low in resistance may be referred to as an oxide conductor layer.

Hydrogen contained in the first conductive layer 111a reacts with oxygen bonded to the metal atoms to form water and forms an oxygen deficiency in the lattice in which the oxygen is removed (or the oxygen-removed portion). When hydrogen enters the oxygen vacancies, electrons as carriers can be generated. In addition, a part of hydrogen can be combined with oxygen bonded to a metal atom to generate an electron as a carrier. Therefore, the oxide semiconductor included in the first conductive layer 111a including hydrogen has a higher carrier density than the oxide semiconductor used in the transistor.

It is preferable that the oxide semiconductor layer in which the channel region of the transistor is formed is reduced as much as possible of hydrogen. Concretely, in the oxide semiconductor layer, the hydrogen concentration obtained by secondary ion mass spectrometry (SIMS) is 2 x 10 ²⁰ atoms / cm ³ or less, preferably 5 x 10 ¹⁹ atoms / cm ³ or less, preferably from 1 × 10 ¹⁹ atoms / cm ³ or ^{less, 5 × 10 18 atoms / cm} 3 , preferably less than 1 × 10 ¹⁸ atoms / cm ³ or less, more preferably 5 × 10 ¹⁷ atoms / cm ³ or less, More preferably 1 x 10 < ¹⁶ > atoms / cm < ³ > or less.

On the other hand, the oxide semiconductor included in the first conductive layer 111a functioning as the electrode of the capacitor 110 has a higher hydrogen concentration and / or oxygen deficiency than the oxide semiconductor applied to the transistor, and has a lower resistance.

The first conductive layer 111a and the oxide semiconductor layer to be applied to the transistor are typically made of In-Ga oxide, In-Zn oxide, In-M-Zn oxide (M is Mg, Al, Ti, Ga, La, Ce, Nd, or Hf). In addition, the first conductive layer 111a and the oxide semiconductor layer applied to the transistor have light-transmitting properties.

In the case where the oxide semiconductor layer applicable to the first conductive layer 111a and the transistor is an In-M-Zn oxide, when the sum of In and M is 100 atomic%, In is at least 25 atomic%, M is at least 75 atomic %, Or more than 34 atomic% of In, and less than 66 atomic% of M.

The first conductive layer 111a and the oxide semiconductor layer applicable to the transistor preferably have an energy gap of 2 eV or more, 2.5 eV or more, or 3 eV or more.

The thickness of the oxide semiconductor layer applicable to the first conductive layer 111a and the transistor may be 3 nm or more and 200 nm or less, 3 nm or more and 100 nm or less, or 3 nm or more and 60 nm or less.

When the first conductive layer 111a and the oxide semiconductor layer applicable to the transistor are In-M-Zn oxide, the atomic ratio of the metal element of the sputtering target used for forming the In-M-Zn oxide is In? M, and Zn? M. M: Zn = 1: 1: 1.2, In: M: Zn = 2: 1: 1.5, In: M: Zn = 1: 1: 1 as the atomic ratio of the metal element of the sputtering target, : Zn = 2: 1: 2.3, In: M: Zn = 2: 1: 3, In: M: Zn = 3: 1: The atomic ratio of the first conductive layer 111a to be formed and the oxide semiconductor layer applicable to the transistor includes an error variation of +/- 40% of the atomic ratio of the metal element contained in the sputtering target.

Further, when hydrogen is added to the oxide semiconductor in which oxygen deficiency is formed, hydrogen enters the site of oxygen deficiency and a donor level is formed in the vicinity of the conduction band. As a result, the oxide semiconductor becomes conductive and becomes conductive. The oxide semiconductor that is made conductive may be referred to as an oxide conductor. Generally, since the oxide semiconductor has a large energy gap, it has transparency to visible light. On the other hand, the oxide conductor is an oxide semiconductor having a donor level near the conduction band. Therefore, the influence of the absorption due to the donor level is small, and the transmittance to visible light is about the same as that of the oxide semiconductor. The oxide conductor is a degenerate semiconductor, and it may be said that the conduction band edge and the Fermi level coincide or coincide with each other. Therefore, an oxide conductor film can be used as an electrode of a capacitive element or the like.

With the structure shown in Fig. 7, the first conductive layer 111a can be formed simultaneously in the transistor fabrication process, so that the process can be simplified. In addition, since the photomask for forming the first conductive layer 111 in Fig. 6 is unnecessary, the manufacturing cost can be reduced.

[Example of sectional configuration 3]

Fig. 8 shows an example of a sectional configuration which is different from that of Fig. 6 and Fig. The configuration shown in FIG. 8 is different from the configuration shown in FIG. 6 in that it does not have a transistor provided on the first substrate 21 side. That is, the sectional configuration shown in Fig. 8 can be applied to a passive matrix type touch panel.

Here, the first conductive layer 111 may have a strip shape extending in one direction. The second conductive layer 113 may have a band shape extending in a direction intersecting with the first conductive layer 111. A passive matrix type touch panel can be realized by arranging a plurality of the first conductive layer 111 and the second conductive layer 113 side by side.

8 shows the contact portion 271 of the first conductive layer 111 and the wiring 273 and the contact portion 272 of the second conductive layer 113 and the wiring 274. [ The first conductive layer 111 and the wiring 273 are electrically connected through an opening provided in the insulating layer 264. Further, the second conductive layer 113 and the wiring 274 are electrically connected through the opening provided in the insulating layer 264 and the insulating layer 112.

Up to this point, an example of the sectional configuration is described.

In the present embodiment, the first substrate supporting the touch sensor and the second substrate supporting the display element are provided, but the present invention is not limited thereto. For example, the display device may be interposed between two substrates, and the first substrate supporting the touch sensor may be bonded to the three substrates, and the display device and the touch sensor may be respectively provided between the two substrates And the substrate may be bonded to form a structure having four substrates.

At least a part of the present embodiment can be implemented by appropriately combining with other embodiments described in this specification.

(Embodiment 2)

In the present embodiment, a configuration example of a touch sensor and an example of a driving method thereof according to an embodiment of the present invention will be described with reference to the drawings.

[Configuration example]

9A is a block diagram for explaining a configuration of a touch panel (also referred to as an input / output device) according to an embodiment of the present invention. FIG. 9B is a circuit diagram illustrating the configuration of the converter CONV. Fig. 9C is a circuit diagram for explaining the configuration of the sensor element 22. Fig. 9 (D-1) and (D-2) are timing charts for explaining a method of driving the sensor element 22. FIG.

The touch sensor illustrated in this embodiment includes a plurality of sensor elements 22 arranged in a matrix form, a signal line DL to which a plurality of sensor elements 22 arranged in the row direction are electrically connected, ), A scanning line G1, and a signal line DL (see Fig. 9 (A)).

For example, the plurality of sensor elements 22 can be arranged in a matrix of n rows and m columns (n and m are natural numbers of 1 or more, respectively).

Further, the sensor element 22 is provided with a capacitance element C which functions as a detection element. The capacitor C corresponds to the capacitor 110 of the first embodiment. For example, the first electrode of the capacitive element C corresponds to the first conductive layer 111 of the first embodiment, and the second electrode corresponds to the second conductive layer 113.

The second electrode of the capacitive element C is electrically connected to the wiring CS. Thus, the potential of the second electrode of the capacitive element C can be controlled using a control signal supplied by the wiring CS.

The sensor element 22 according to an aspect of the present invention has at least a transistor M1. Further, the structure may have the transistor M2 and / or the transistor M3 (see Fig. 9 (C)).

In the transistor M1, the gate is electrically connected to the first electrode of the capacitor C, and the first electrode is electrically connected to the wiring VPI. The wiring VPI has a function of supplying a ground potential, for example.

The gate of the transistor M2 is electrically connected to the scanning line G1, the first electrode is electrically connected to the second electrode of the transistor M1, and the second electrode is electrically connected to the signal line DL. The scanning line G1 has a function of supplying, for example, a selection signal. Further, the signal line DL has a function of supplying a detection signal (DATA), for example.

The gate of the transistor M3 is electrically connected to the wiring RES, the first electrode is electrically connected to the first electrode of the capacitive element C, and the second electrode is electrically connected to the wiring VRES. The wiring RES has a function of supplying a reset signal, for example. The wiring VRES has a function of supplying a potential capable of turning on the transistor M1, for example.

The capacitance value of the capacitance element C is changed, for example, by the proximity of the object to the first electrode or the second electrode, or by changing the distance between the first electrode and the second electrode. Thereby, the sensor element 22 can supply the detection signal DATA according to the change of the capacitance of the capacitance element C.

The wiring CS electrically connected to the second electrode of the capacitive element C has a function of supplying a control signal for controlling the potential of the second electrode of the capacitive element C. [

A node where the first electrode of the capacitor C, the gate of the transistor M1, and the first electrode of the transistor M3 are electrically connected to each other is referred to as a node A. [

Fig. 10 (A) shows an example of a circuit diagram in the case where two sensor elements 22 are arranged in the row direction and the column direction.

10B shows an example of the positional relationship between the first conductive layer 111 (corresponding to the first electrode) included in the sensor element 22 and each wire. In the first conductive layer 111, the gate of the transistor M1 and the second electrode of the transistor M3 are electrically connected to each other. The first conductive layer 111 is arranged so as to overlap with the plurality of pixels 33 shown in FIG. 10 (C). It is also preferable to dispose the transistors M1 to M3 in regions not overlapped with the first conductive layer 111 as shown in Fig. 10 (B).

11 (A) to 11 (C), the sensor element 22 may not have the transistor M2. At this time, in the sensor element 22 arranged in plural in the row direction, the second electrode of each capacitive element C may be configured to be electrically connected to the scanning line G1 instead of the wiring CS.

The wiring VPO and the wiring BR shown in Fig. 9B have a function of supplying a high power source potential enough to turn on the transistor, for example. Further, the signal line DL has a function of supplying the detection signal (DATA). The terminal OUT has a function of supplying a signal converted in accordance with the detection signal (DATA).

The converter CONV has a conversion circuit. Various circuits capable of converting the detection signal DATA and supplying it to the terminal OUT can be used for the converter CONV. For example, by electrically connecting the converter CONV to the sensor element 22, a circuit functioning as a source follower circuit or a current mirror circuit may be applied.

Specifically, the source follower circuit can be constructed by using the converter CONV using the transistor M4 (see FIG. 9B). A transistor which can be fabricated in the same process as the transistors M1 to M3 may be used as the transistor M4.

For example, the configuration of the transistor 251 or the transistor 252 illustrated in Embodiment 1 can be applied to each of the transistors M1 to M4.

The configuration of the converter CONV is not limited to the configuration shown in Fig. 9B. Fig. 12 shows an example of a converter CONV having another configuration.

The converter CONV shown in Fig. 12A has a transistor M5 in addition to the transistor M4. Specifically, the gate of the transistor M5 is electrically connected to the signal line DL, the first electrode is electrically connected to the terminal OUT, and the second electrode is electrically connected to the wiring GND. The wiring GND has a function of supplying a ground potential, for example. Further, as shown in Fig. 12B, each of the transistor M4 and the transistor M5 may have a second gate. In this case, it is preferable that the second gate is electrically connected to the gate.

The converter CONV shown in Fig. 12 (C) has a transistor M4, a transistor M5, and a resistor R. Fig. Specifically, the gate of the transistor M4 is electrically connected to the wiring BR1. The transistor M5 has a gate electrically connected to the wiring BR2 and a first electrode electrically connected to the terminal OUT and a second electrode of the resistor R and a second electrode electrically connected to the wiring GND Respectively. The first electrode of the resistor R is electrically connected to the wiring VDD. Each of the wiring BR1 and the wiring BR2 has a function of supplying, for example, a high electric potential enough to turn on the transistor. The wiring VDD has a function of supplying, for example, a high electric potential.

13A and 13B are schematic diagrams showing examples of the positional relationship between the first electrode on the first substrate 21, the signal line DL and the converter CONV.

As shown in Fig. 13A, when the converters CONV are arranged in the extending direction of the signal lines DL, the lengths of the signal lines DL electrically connected to the converters CONV can be made substantially equal have. For example, when the electrical resistance of the signal line DL has a significant influence on the detection sensitivity, such an arrangement method is preferable.

In Fig. 13B, a plurality of converters CONV are arranged close to each other by changing the length and shape of the signal lines DL. When the positional dependency of the electrical characteristics of the transistor included in the converter CONV is large, the deviation of the electrical characteristics of the converter CONV can be reduced and the detection sensitivity can be improved by disposing them close to each other.

[Driving method example]

Next, a method of driving the sensor element 22 will be described with reference to Fig.

[Step 1]

A reset signal for turning off the transistor M3 and then turning off the transistor M3 is supplied to the gate of the transistor M3 so that the potential of the first electrode of the capacitance element C (Refer to (D-1) and (T1) in FIG. 9).

Specifically, a reset signal is supplied to the wiring RES. The transistor M3 to which the reset signal is supplied sets the potential of the node A to, for example, a potential capable of turning on the transistor M1.

[Second Step]

In the second step, a selection signal for turning on the transistor M2 is supplied to the gate of the transistor M2 to electrically connect the second electrode of the transistor M1 to the signal line DL D-1), and the period T2).

Specifically, a selection signal is supplied to the scanning line G1. The transistor M2 supplied with the selection signal electrically connects the second electrode of the transistor M1 to the signal line DL.

[Third Step]

In the third step, a control signal is supplied to the second electrode of the capacitive element C, and a potential which varies in accordance with the control signal and the capacitance of the capacitive element C is supplied to the gate of the transistor M1.

Specifically, a rectangular control signal is supplied to the wiring CS. When a rectangular control signal is supplied to the second electrode of the capacitor C, the potential of the node A changes according to the capacitance of the capacitor C ((D-1) in FIG. 9, See the latter half of.

For example, when the capacitance element C is placed in the air and the dielectric constant higher than that of the atmosphere is arranged close to the second electrode of the capacitance element C, the capacitance of the capacitance element C apparently becomes larger.

Thus, the potential change of the node A in accordance with the rectangular control signal becomes smaller than that in the case where the dielectric constant is higher than that in the atmosphere, as compared with the case where the dielectric constant is not arranged close to the atmosphere (see (D-2), solid line in FIG. 9).

Alternatively, the capacity of the capacitive element C changes even when the distance between the first electrode and the second electrode of the capacitive element C changes with the deformation of the touch panel. Thereby, the potential of the node A is changed.

[Step 4]

In the fourth step, a signal corresponding to the potential change of the gate of the transistor M1 is supplied to the signal line DL.

For example, a current change due to the potential change of the gate of the transistor M1 is supplied to the signal line DL.

The converter CONV converts, for example, a change in the current flowing through the signal line DL into a change in voltage and supplies the change.

[Step 5]

In a fifth step, a selection signal for turning off the transistor M2 is supplied to the gate of the transistor M2.

Through the above-described steps, the operation of the plurality of sensor elements 22 electrically connected to one scanning line G1 is completed.

In the case of having n scanning lines G1, the first to fifth steps may be repeated for each of the main lines G1 (1) to G1 (n).

Alternatively, when each sensor element 22 commonly includes the wiring RES and the wiring CS, the driving method as shown in Fig. 14A may be performed. That is, first, a reset signal is supplied to the wiring RES. Next, a selection signal is sequentially supplied to the scanning lines G1 (1) to G1 (n) while supplying a control signal to the wiring CS to sequentially supply a signal corresponding to the potential change of the node A to the signal line (DL) 1 to the signal line DL (m).

By using such a method, it is possible to reduce the frequency of the supply of the reset signal and the supply of the control signal.

Here, the potential of the node A may change with time due to various factors. For example, the potential of the node A may change in accordance with a change in environment such as temperature or humidity.

Thus, as a rectangular control signal to be supplied to the second electrode of the capacitive element C, two kinds of potentials are used to operate, and the difference between the two detection signals DATA is taken, Can be canceled out. The detection sensitivity can be increased by such an operation.

14B shows an example of a driving method in which the period R1 and the period R2 are alternately repeated.

In the period R1 in FIG. 14 (B), a low level potential is supplied to the wiring CS while the potential for turning on the transistor M3 is supplied to the signal line RES. Subsequently, a high level potential is supplied to the wiring CS. That is, in the period R1, the detection signal DATA corresponding to the potential change of the node A is applied to the signal line DL (DL) in the state in which the potential of the second electrode of the capacitive element C is changed from the low level potential to the high level potential . Then, the signal converted by the converter CONV is supplied to the terminal OUT in accordance with the detection signal (DATA).

On the other hand, in the period R2, while the potential for turning on the transistor M3 is supplied to the signal line RES, a high level potential is supplied to the line CS. Subsequently, a low level potential is supplied to the wiring CS. That is, in the period R2, the detection signal DATA according to the potential change of the node A changes from the high level potential to the low level potential on the signal line DL . Then, the signal converted by the converter CONV is supplied to the terminal OUT in accordance with the detection signal (DATA).

Thereafter, by taking the difference between the signal supplied to the terminal OUT in the period R1 and the signal supplied to the terminal OUT in the period R2, the influence of the potential change of the node A over time Can be obtained.

FIG. 14C shows an example in which the signal supplied to the wiring CS is different from that shown in FIG. 14B.

In (C) of Fig. 14, the control signal supplied to the wiring CS has three potentials of a high level potential, a middle level potential and a low level potential. More specifically, a low level potential is supplied to the wiring CS while the potential for turning on the transistor M3 is supplied to the signal line RES in the period R1. Thereafter, the selection signals are sequentially supplied to the scanning lines G1 (1) to G1 (n) while supplying the middle level potential to the wiring CS. On the other hand, in the period R2, a high level potential is supplied to the wiring CS while a potential for turning on the transistor M3 is supplied to the signal line RES. Thereafter, the selection signal is sequentially supplied to the scanning lines G1 (1) to G1 (n) while supplying the middle level potential to the wiring CS.

Thereafter, similarly to the above, by taking the difference between the signal supplied to the terminal OUT in the period R1 and the signal supplied to the terminal OUT in the period R2, A signal canceling the influence of the potential change can be obtained.

Here is a description of the driving method.

At least a part of the present embodiment can be carried out by appropriately combining with another embodiment described in this specification.

(Embodiment 3)

In this embodiment, an electronic apparatus and a lighting apparatus which can be manufactured by applying an embodiment of the present invention will be described with reference to Figs. 15 and 16. Fig.

The touch panel according to an aspect of the present invention has flexibility. Therefore, it can be suitably used for flexible electronic apparatuses and lighting apparatuses. Further, by applying an embodiment of the present invention, it is possible to manufacture an electronic device or a lighting device which is highly reliable and is resistant to repetitive warping.

Examples of the electronic device include a television (such as a television or a television receiver), a monitor such as a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device) , A portable information terminal, a sound reproducing apparatus, a pachinko machine, and the like.

Further, since the touch panel according to an embodiment of the present invention has flexibility, the touch panel may be provided along an inner wall or an outer wall of a house or a building, or a curved surface of an interior or exterior of an automobile.

Further, an electronic device according to an aspect of the present invention may have a touch panel and a secondary battery. In this case, it is preferable that the secondary battery can be charged using the non-contact power transmission.

Examples of the secondary battery include a lithium ion secondary battery such as a lithium polymer battery using a gel electrolyte, a lithium ion secondary battery, a nickel hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, Nickel-zinc batteries, and silver-zinc batteries.

An electronic apparatus according to an aspect of the present invention may have a touch panel and an antenna. By receiving a signal through the antenna, the display unit can display the image, information, and the like. Further, when the electronic apparatus has a secondary battery, the antenna may be used for non-contact power transmission.

Fig. 15 (A) shows an example of a cellular phone. The portable telephone 7400 includes an operation button 7403, an external connection port 7404, a speaker 7405, a microphone 7406, and the like in addition to the display portion 7402 provided in the housing 7401. The portable telephone 7400 is manufactured by using the touch panel according to an embodiment of the present invention in the display portion 7402. [ According to an aspect of the present invention, it is possible to provide a highly reliable portable telephone provided with a warped display portion at a high yield.

The portable telephone 7400 shown in Fig. 15A can input information by touching the display unit 7402 with a finger or the like. In addition, all operations such as dialing or inputting characters can be performed by touching the display portion 7402 with a finger or the like.

The ON / OFF operation of the power source and the type of the image displayed on the display unit 7402 can be switched by the operation of the operation button 7403. [ For example, it is possible to switch from the mail creation screen to the main menu screen.

15 (B) shows an example of a wristwatch-type portable information terminal. The portable information terminal 7100 includes a housing 7101, a display portion 7102, a band 7103, a buckle 7104, an operation button 7105, an input / output terminal 7106, and the like.

The portable information terminal 7100 can execute various applications such as a mobile phone, an e-mail, a sentence reading and writing, a music reproduction, an internet communication, a computer game and the like.

The display portion 7102 is provided with its display surface curved, and can perform display along the curved display surface. The display unit 7102 includes a touch sensor, and can be operated by touching the screen with a finger, a stylus, or the like. For example, by touching the icon 7107 displayed on the display unit 7102, the application can be started.

In addition to the time setting, the operation button 7105 can have various functions such as power ON / OFF operation, wireless communication ON / OFF operation, execution and release of the silent mode, execution and release of the power saving mode, and the like. For example, the function of the operation button 7105 can be freely set by the operating system provided in the portable information terminal 7100. [

Further, the portable information terminal 7100 can execute the short-range wireless communication according to the communication standard. For example, it is possible to talk hands-free by communicating with a headset capable of wireless communication.

In addition, the portable information terminal 7100 includes an input / output terminal 7106, and can exchange data directly with other information terminals through the connector. It is also possible to charge through the input / output terminal 7106. Also, the charging operation may be performed by wireless power supply without passing through the input / output terminal 7106. [

A display panel 7102 of the portable information terminal 7100 is provided with a touch panel according to an embodiment of the present invention. According to an aspect of the present invention, a highly reliable portable information terminal having a warped display portion can be provided at a high yield.

Figs. 15C to 15E show an example of the illumination device. The lighting device 7200, the lighting device 7210 and the lighting device 7220 each have a pedestal portion 7201 provided with an operation switch 7203 and a light emitting portion supported by the pedestal portion 7201.

The lighting apparatus 7200 shown in Fig. 15C has a light emitting portion 7202 having a wavy light emitting surface. This results in a lighting device with high design capability.

The light emitting portion 7212 included in the illumination device 7210 shown in FIG. 15D has a configuration in which two light emitting portions that are convexly curved are symmetrically arranged. Accordingly, all directions can be illuminated with the illumination device 7210 as the center.

The illuminating device 7220 shown in (E) of FIG. 15 has a concave curved light emitting portion 7222. Therefore, since the light emitted from the light emitting portion 7222 is condensed on the front surface of the illuminating device 7220, it is suitable for brightening a specific range.

Since each light emitting portion of the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light emitting portion is fixed by a member such as a plastic member or a movable frame, The light-emitting surface of the negative portion may be freely rotated.

Here, the illumination device in which the light emitting portion is supported by the pedestal portion is exemplified, but the housing having the light emitting portion may be fixed to the ceiling or used in a state of being suspended from the ceiling. Since the light emitting surface can be bent and used, the light emitting surface can be concavely curved to bright a specific area, or the light emitting surface can be curved convexly to brightly illuminate the whole room.

Here, each of the light emitting portions is provided with a touch panel according to an embodiment of the present invention. According to an aspect of the present invention, it is possible to provide a highly reliable lighting device having a bent light emitting portion at a high yield.

15 (F) shows an example of a portable touch panel. The touch panel 7300 includes a housing 7301, a display portion 7302, an operation button 7303, a lead member 7304, and a control portion 7305.

The touch panel 7300 has a column-shaped housing 7301 and a flexible display portion 7302 that is rolled up in a roll shape.

In addition, the touch panel 7300 can receive a video signal by the control unit 7305, and display the received video on the display unit 7302. [ The control unit 7305 includes a battery. Further, the control unit 7305 may be provided with a terminal portion for connecting a connector, and a configuration in which a video signal or electric power is supplied directly from the outside by wire.

Further, the operation button 7303 can perform ON / OFF operation of the power supply, switching of the image to be displayed, and the like.

Fig. 15G shows the touch panel 7300 in a state in which the display portion 7302 is taken out by the drawing member 7304. In this state, an image can be displayed on the display unit 7302. [ Further, the operation button 7303 disposed on the surface of the housing 7301 allows easy operation with one hand. 15 (F), the operation button 7303 can be easily operated by one hand by disposing the operation button 7303 on one side of the housing instead of the center of the housing 7301.

Further, a frame for reinforcing the side surface of the display portion 7302 may be provided so that the display surface of the display portion 7302 is fixed so as to be flat when the display portion 7302 is taken out.

In addition to this configuration, a configuration may also be employed in which a speaker is provided in the housing and a voice is output by the voice signal received together with the video signal.

The display unit 7302 is provided with a touch panel according to an embodiment of the present invention. According to one aspect of the present invention, a light and highly reliable touch panel can be provided at a high yield.

Figs. 16A to 16C show the folding portable information terminal 310. Fig. 16 (A) shows the portable information terminal 310 in an unfolded state. FIG. 16B shows the portable information terminal 310 in the middle state in which the state changes from one of the opened state or the folded state to the other state. Fig. 16C shows the folded portable information terminal 310. Fig. The portable information terminal 310 has excellent visibility in the folded state, and excellent display visibility due to a large display area having no joints in the unfolded state.

The display panel 316 is supported by three housings 315 connected by a hinge 313. The portable information terminal 310 can be reversibly deformed from the expanded state to the folded state by bending the two housings 315 using the hinge 313. [ The touch panel according to an embodiment of the present invention can be used for the display panel 316. [ For example, a touch panel having a radius of curvature of 1 mm or more and 150 mm or less can be applied.

In an embodiment of the present invention, a configuration may be employed in which a sensor for detecting that the touch panel is in the folded state or the unfolded state and supplying the detection information is provided. The control device of the touch panel may acquire information indicating that the touch panel is in a folded state and stop the operation of the folded portion (or the folded portion that the user can not see). More specifically, the display may be stopped. Further, the detection by the touch sensor may be stopped.

Similarly, the control device of the touch panel may acquire information indicating that the touch panel is in the unfolded state, and may resume the display or detection by the touch sensor.

Figs. 16D and 16E show the folding portable information terminal 320. Fig. 16D shows the portable information terminal 320 in a folded state such that the display portion 322 is outside. 16 (E) shows the portable information terminal 320 in a folded state such that the display portion 322 is inward. When the portable information terminal 320 is not used, the display portion 322 can be prevented from being dirty or cracked when the non-display portion 325 is folded outward. The touch panel according to an embodiment of the present invention can be used for the display portion 322. [

FIG. 16F is a perspective view for explaining the external shape of the portable information terminal 330. FIG. Fig. 16G is a top view of the portable information terminal 330. Fig. 16 (H) is a perspective view for explaining the outline of the portable information terminal 340.

The portable information terminals 330 and 340 function as one or a plurality of, for example, a telephone, a notebook, or an information browsing device. Specifically, each can be used as a smartphone.

The portable information terminals 330 and 340 can display characters and image information on the plurality of faces. For example, three operation buttons 339 can be displayed on one side (see (F) and (H) in FIG. 16). Further, the information 337 (the rectangles drawn by the broken line in the figure) can be displayed on the other side (see (G) and (H) in FIG. 16). Examples of the information 337 include a notification of an SNS (Social Networking Service), an indication of an incoming call such as an e-mail or a telephone call, a title of an electronic mail or the like, a sender name, date and time, And the reception strength of the antenna. Alternatively, an operation button 339, an icon, or the like may be displayed instead of the information 337 at a position where the information 337 is displayed. 16 (F) and (G) show an example in which the information 337 is displayed on the upper side, but one form of the present invention is not limited to this. For example, it may be displayed on the side surface like the portable information terminal 340 shown in (H) of FIG.

For example, the user of the portable information terminal 330 can check the display (here, information 337) while inserting the portable information terminal 330 into the breast pocket of the clothes.

Specifically, the phone number or the name of the caller of the incoming call is displayed at a position that can be confirmed from above the portable information terminal 330. The user can check the display even if the portable information terminal 330 is not taken out of the pocket and judge whether or not to receive the telephone call.

A touch panel according to an embodiment of the present invention can be used for the display portion 333 of each of the housing 335 of the portable information terminal 330 and the housing 336 of the portable information terminal 340. [ According to an aspect of the present invention, a highly reliable touch panel having a warped display portion can be provided with a good yield.

Further, the information may be displayed on three or more sides as in the portable information terminal 345 shown in (I) of Fig. In this example, the information 355, the information 356, and the information 357 are displayed on different faces, respectively.

A touch panel according to an embodiment of the present invention can be used for the display section 358 of the housing 354 of the portable information terminal 345. [ According to an aspect of the present invention, a highly reliable touch panel having a warped display portion can be provided with a good yield.

10: Touch panel module
20: Touch sensor module
21: substrate
22: Sensor element
23: Circuit
24: Circuit
25: Wiring
26: Wiring
30: Display panel
31: substrate
32:
33: pixel
34: Circuit
41: FPC
42: FPC
43: terminal
110: Capacitive element
111: conductive layer
111a: conductive layer
112: insulating layer
113: conductive layer
114: colored layer
114b: colored layer
114 g: colored layer
114r: colored layer
115: Shading layer
117: conductive layer
118: opening
119: Optical adjustment layer
120: transistor
121: semiconductor layer
201: transistor
202: transistor
203: transistor
204: Light emitting element
205:
210: connecting layer
211: Adhesive layer
212: insulation layer
213: Insulation layer
214: insulating layer
215: insulating layer
216: insulating layer
217: Insulating layer
218: Insulation layer
219: Spacer
220: adhesive layer
221: Electrode
222: EL layer
223: Electrode
224: Optical adjustment layer
225: conductive layer
251: transistor
252: transistor
253:
260: connecting layer
261: Adhesive layer
262: Insulating layer
263: Insulating layer
264: Insulating layer
265: Insulation layer
266: Insulating layer
267: Overcoat
271:
272:
273: Wiring
274: Wiring
310: portable information terminal
313: Hinge
315: Housing
316: Display panel
320: portable information terminal
322:
325: Non-
330: Portable information terminal
333:
335: Housing
336: Housing
337: Information
339: Operation button
340: Portable information terminal
345: Portable information terminal
354: housing
355: Information
356: Information
357: Information
358:
7100: portable information terminal
7101: Housing
7102:
7103: Band
7104: Buckle
7105: Operation button
7106: I / O terminal
7107: Icon
7200: Lighting system
7201:
7202:
7203: Operation switch
7210: Lighting system
7212:
7220: Lighting system
7222:
7300: Touch panel
7301: Housing
7302:
7303: Operation button
7304: Absence
7305:
7400: Mobile phone
7401: Housing
7402:
7403: Operation button
7404: External connection port
7405: Speaker
7406: microphone

Claims (18)

In the touch sensor,
A first substrate;
A first conductive layer;
A second conductive layer;
And an insulating layer,
Wherein the first conductive layer includes a region located between the first substrate and the second conductive layer,
Wherein the insulating layer includes a region located between the first conductive layer and the second conductive layer,
Wherein the first conductive layer, the second conductive layer, and the insulating layer form a capacitive element,
The second conductive layer having an opening,
Wherein the opening of the second conductive layer and the first conductive layer overlap each other in one region. The method according to claim 1,
And a first transistor electrically connected to the first conductive layer. In the touch panel,
A touch sensor according to claim 1;
A second substrate;
A display element;
A first layer;
And a second layer,
Wherein the second substrate includes a region overlapping with the first substrate,
Wherein the display element, the first layer, and the second layer are positioned between the first substrate and the second substrate,
Wherein the first layer has a function of transmitting light of a specific wavelength band and includes a region overlapping with the display element,
The second layer has a function of shielding visible light,
Wherein the first conductive layer includes a region overlapping with the first layer and a region overlapping with the second layer,
Wherein the second conductive layer includes a region overlapping the second layer,
A region where the opening of the second conductive layer and the display element overlap with each other,
Wherein the opening of the second conductive layer and the first layer overlap each other in an area. The method of claim 3,
Wherein the display element is a light emitting element. The method of claim 3,
Wherein the first substrate and the second substrate each have flexibility. In the touch sensor module,
A touch sensor according to claim 1;
Comprising a first FPC,
Wherein the first FPC has a function of supplying a signal to at least one of the first conductive layer and the second conductive layer. In the touch panel module,
A touch panel according to claim 3;
A second FPC;
A third FPC,
Wherein the second FPC has a function of supplying a signal to at least one of the first conductive layer and the second conductive layer,
And the third FPC has a function of supplying a signal to the display element. In the electronic device,
A touch sensor module according to claim 6;
Comprising a housing,
And the touch sensor module is provided in the housing. In the electronic device,
A touch panel module according to claim 7;
Comprising a housing,
Wherein the touch panel module is provided in the housing. In the touch sensor,
And a capacitive element including a first conductive layer, a second conductive layer having an opening, and an insulating layer between the first conductive layer and the second conductive layer,
Wherein the opening of the second conductive layer and the first conductive layer overlap each other in one region. 11. The method of claim 10,
And a first transistor electrically connected to the first conductive layer. In the touch panel,
A touch sensor according to claim 10;
A first substrate;
A second substrate;
A display element;
A first layer;
And a second layer,
Wherein the second substrate includes a region overlapping with the first substrate,
Wherein the display element, the first layer, and the second layer are positioned between the first substrate and the second substrate,
Wherein the first layer has a function of transmitting light of a specific wavelength band and includes a region overlapping with the display element,
The second layer has a function of shielding visible light,
Wherein the first conductive layer includes a region overlapping with the first layer and a region overlapping with the second layer,
Wherein the second conductive layer includes a region overlapping the second layer,
A region where the opening of the second conductive layer and the display element overlap with each other,
Wherein the opening of the second conductive layer and the first layer overlap each other in an area. 13. The method of claim 12,
Wherein the display element is a light emitting element. 13. The method of claim 12,
Wherein the first substrate and the second substrate each have flexibility. In the touch sensor module,
A touch sensor according to claim 10;
Comprising a first FPC,
Wherein the first FPC has a function of supplying a signal to at least one of the first conductive layer and the second conductive layer. In the touch panel module,
A touch panel according to claim 12;
A second FPC;
A third FPC,
Wherein the second FPC has a function of supplying a signal to at least one of the first conductive layer and the second conductive layer,
And the third FPC has a function of supplying a signal to the display element. In the electronic device,
A touch sensor module according to claim 15;
Comprising a housing,
And the touch sensor module is provided in the housing. In the electronic device,
A touch panel module according to claim 16;
Comprising a housing,
Wherein the touch panel module is provided in the housing.

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