JP6570700B2 - Touch panel - Google Patents

Description

One embodiment of the present invention relates to a touch panel. Alternatively, the present invention relates to a flexible touch panel.

Note that one embodiment of the present invention is not limited to the above technical field. One embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. One aspect of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, a technical field of one embodiment of the present invention disclosed more specifically in this specification includes a semiconductor device,
A display device, a light-emitting device, a power storage device, a storage device, an electronic device, a lighting device, an input device, an input / output device, a driving method thereof, or a manufacturing method thereof can be given as an example.

Note that in this specification and the like, a semiconductor device refers to any device that can function by utilizing semiconductor characteristics. A semiconductor element such as a transistor, a semiconductor circuit, an arithmetic device, and a memory device are one embodiment of the semiconductor device. Imaging devices, display devices, liquid crystal display devices, light emitting devices, electro-optical devices, power generation devices (including thin film solar cells, organic thin film solar cells, etc.), and electronic devices
A semiconductor device may be included.

In recent years, display devices are expected to be applied to various uses, and diversification is required. For example, development of a smart phone or a tablet terminal provided with a touch panel as a portable information terminal is underway.

Patent Document 1 discloses a flexible active matrix light-emitting device including a transistor or an organic EL element as a switching element on a film substrate.

JP 2003-174153 A

There is a demand for a touch panel in which a display panel is added with a function of inputting by touching the screen with a finger or a stylus as a user interface.

For example, the touch panel can be configured to provide a touch sensor on the viewing side of the display panel. The touch sensor provided on the touch panel is desired to have high detection sensitivity. In addition, since the touch sensor is provided so as to overlap with the display panel, the visibility may be reduced as compared with the case where the touch sensor is not provided.

In particular, when a light-shielding material is used for the wiring or the like constituting the touch sensor, the wiring or the like is visually recognized, and the display quality of the touch panel may be deteriorated. In particular, when the wiring or the like is a material that reflects light, the wiring may be visually recognized due to reflection when exposed to strong external light.

An object of one embodiment of the present invention is to improve the visibility of a touch panel. Another object is to improve detection sensitivity of a touch panel. Another object is to provide a thin touch panel. Another object is to provide a touch panel that can be bent. Another object is to provide a lightweight touch panel. Another object is to provide a highly reliable touch panel. Or
An object is to provide a novel input device. Another object is to provide a novel input / output device.

Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Problems other than these will become apparent from the description, drawings, claims, etc., and the description,
Issues other than these can be extracted from the description of the drawings and claims.

One embodiment of the present invention includes a first substrate, a second substrate, a display element, a first layer, a second layer, a first conductive layer, a second conductive layer, 3 is a touch panel having three conductive layers and an insulating layer. The first substrate and the second substrate have regions that overlap each other. A display element, a first layer, a second layer, a first conductive layer, a second conductive layer, between the first substrate and the second substrate;
A third conductive layer; and an insulating layer. The first layer is located closer to the first substrate than the display element. The first layer and the display element have regions that overlap each other. The second layer is located closer to the first substrate than the display element. The insulating layer has a region located between the first conductive layer and the second conductive layer. The first conductive layer, the second conductive layer, and the insulating layer are more first than the first layer and the second layer.
Located on the substrate side. The third conductive layer is located closer to the first substrate than the display element, and the second conductive layer
It is located on the second substrate side of the layer. The third conductive layer and the second layer have regions that overlap each other. The first conductive layer and the second conductive layer have a function of transmitting visible light. The first layer has a function of transmitting light in a specific wavelength band. The second layer has a function of shielding visible light.

In the above, the second layer has an opening, and the third conductive layer and the first conductive layer or the second conductive layer are electrically connected through the opening. preferable.

In the above, a structure including a transistor is preferable. At this time, the transistor is located closer to the first substrate than the first layer and located closer to the first substrate than the second layer, and the third conductive layer includes the gate and source of the transistor Alternatively, a structure in which the drain is electrically connected is preferable.

  In the above, a light-emitting element is preferably used as the display element.

  In the above, it is preferable that the first substrate and the second substrate have flexibility.

In addition, one of the touch panels described above and FPC (Flexible printed)
It is preferable to use a touch panel module having a circuit). An electronic device in which the touch panel module is incorporated in a housing is also one embodiment of the present invention.

According to one embodiment of the present invention, the visibility of a touch panel can be improved. Alternatively, the detection sensitivity of the touch panel can be improved. Alternatively, a thin touch panel can be provided. Alternatively, a touch panel that can be bent can be provided. Alternatively, a lightweight touch panel can be provided.
Alternatively, a highly reliable touch panel can be provided. Alternatively, a novel input device can be provided. Alternatively, a novel input / output device can be provided. Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

The structural example of the touchscreen module which concerns on embodiment. The structural example of the laminated structure which the touch panel module which concerns on embodiment has. The structural example of the laminated structure which the touch panel module which concerns on embodiment has. The structural example of the touchscreen module which concerns on embodiment. The structural example of the touchscreen module which concerns on embodiment. The structural example of the touchscreen module which concerns on embodiment. The block diagram and circuit diagram of a touch panel based on Embodiment. The circuit diagram and schematic of the structure which the touchscreen which concerns on embodiment has. The block diagram and circuit diagram of the structure which the touchscreen which concerns on embodiment has. The circuit diagram of the structure which the touchscreen which concerns on embodiment has. 8A and 8B illustrate a touch panel driving method according to an embodiment. An electronic device according to an embodiment. An electronic device according to an embodiment.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated. In addition, in the case where the same function is indicated, the hatch pattern is the same, and there is a case where no reference numeral is given.

Note that in each drawing described in this specification, the size of each component, the thickness of a layer, or a region is
May be exaggerated for clarity. Therefore, it is not necessarily limited to the scale.

In the present specification and the like, ordinal numbers such as “first” and “second” are used for avoiding confusion between components, and are not limited numerically.

A transistor is a kind of semiconductor element, and can realize amplification of current and voltage, switching operation for controlling conduction or non-conduction, and the like. The transistor in this specification is an IGFET (Insulated Gate Field Effect Trans).
istor) and thin film transistor (TFT: Thin Film Transistor)
)including.

Note that the terms “film” and “layer” can be interchanged with each other depending on the case or circumstances. For example, the term “conductive layer” may be changed to the term “conductive film”. Alternatively, for example, the term “insulating film” may be changed to the term “insulating layer” in some cases.

(Embodiment 1)
In this embodiment, structures of a touch sensor of one embodiment of the present invention, a touch sensor module including a touch sensor, a touch panel, a touch panel module, and the like are described. Hereinafter, a configuration example in the case of applying a touch sensor that detects contact or proximity of a detection target such as a finger or a stylus by detecting a change in capacitance will be described.

In this specification and the like, for example, FPC or TC
A device to which a connector such as P (Tape Carrier Package) is attached, or a device in which an IC is mounted on a substrate by a COG (Chip On Glass) method or the like may be referred to as a touch sensor module. In addition, the function as a touch sensor,
A device having both functions for displaying images and the like may be referred to as a touch panel (input / output device). Note that a touch panel to which the connector is attached or an IC is mounted may be referred to as a touch panel module or simply a touch panel.

A capacitive touch sensor that can be applied to one embodiment of the present invention includes a capacitor. The capacitor can have a stacked structure in which, for example, a first conductive layer, a second conductive layer, and an insulating layer are sandwiched therebetween. At this time, the first conductive layer and the second conductive layer each function as an electrode of the capacitor. The insulating layer functions as a dielectric.

Of the first conductive layer and the second conductive layer, the first conductive layer is provided on the touch surface (detection surface) side. A touch sensor of one embodiment of the present invention includes a detection target such as a finger or a stylus,
The touch operation can be detected by detecting the capacitance formed between the conductive layer and the conductive layer. Specifically, when a predetermined potential difference is applied between the first conductive layer and the second conductive layer, a change in the potential of the first conductive layer caused by the capacitance formed by the touch operation is detected. By doing so, the touch operation can be detected.

The touch sensor of one embodiment of the present invention can be overlapped with a display panel including a pixel including a display element to form a touch panel. The pixels emit or transmit light toward the touch surface (detection surface). Here, when a color filter (also referred to as a colored layer) is provided over the display element, the color purity of light from the pixel can be increased. In addition, if a light shielding layer is provided between two adjacent color filters, color mixing of light emitted from two adjacent pixels is suppressed,
Display quality can be improved.

Here, one embodiment of the present invention includes a third conductive layer in addition to the two conductive layers included in the capacitor. The third conductive layer preferably has a function as a wiring electrically connected to the first conductive layer, the second conductive layer, or another circuit of the capacitor. At this time, it is preferable that the third conductive layer is provided closer to the display element than the light shielding layer, and the third conductive layer and the light shielding layer have a region where they overlap each other. By doing so, it is possible to prevent the third conductive layer from being hidden by the light shielding layer and viewed when viewed from the detection surface side (that is, the display surface side) of the touch panel. Therefore, a touch panel with extremely high visibility can be obtained.

For the third conductive layer, for example, a material containing a metal or an alloy is preferably used. Since a material including a metal or an alloy has relatively high conductivity, signal delay is suppressed when used for a wiring or an electrode, and detection sensitivity of the touch sensor can be improved. Note that many of these materials have a property of blocking visible light, but the third conductive layer is hidden behind the light blocking layer, so that light from the pixels is not blocked and the aperture ratio of the touch panel is increased. be able to. Note that the third conductive layer does not necessarily need to use a material that blocks light, and a material that transmits part of visible light, such as a conductive oxide or a conductive organic compound, can also be used.

The touch panel preferably has a configuration in which two substrates, a substrate that supports the touch sensor, and a substrate that supports the display element are arranged to face each other. At this time, it is preferable that the plurality of sensor elements included in the touch sensor be an active matrix touch sensor including both a capacitor element and an active element such as a transistor. With such a configuration, it is possible to make the touch sensor less susceptible to noise caused when the display element is driven. Therefore, even if the touch sensor and the display element are sandwiched between two substrates and these are arranged close to each other, it is possible to suppress a decrease in detection sensitivity. In particular, by using a flexible material for the pair of substrates, a thin, lightweight, and flexible touch panel can be realized.

At this time, a transistor that forms a sensor element or a circuit is formed on a substrate that supports the touch sensor, and a conductive layer that functions as a wiring electrically connected to the transistor or the capacitor element
It is preferable to apply the third conductive layer. In this way, even when a device such as a transistor is provided on the detection surface side of the touch panel, the area of the electrodes and wiring visible from the detection surface side of the touch panel can be minimized. Sexual deterioration can be suppressed.

  Hereinafter, a more specific structure example of one embodiment of the present invention will be described with reference to the drawings.

[Configuration example]
FIG. 1A is a schematic perspective view of a touch panel module 10 of one embodiment of the present invention. FIG. 1B is a schematic perspective view when the touch panel module 10 is developed. The touch panel module 10 has a configuration in which a touch sensor module 20 and a display panel 30 are provided to overlap each other.

The touch sensor module 20 is a sensor element (also referred to as a detection element) on the first substrate 21.
A touch sensor (also referred to as a touch sensor panel) including the FPC 41 is provided. A plurality of sensor elements 22 are arranged in a matrix on the first substrate 21. Further, it is preferable that a circuit 23 and a circuit 24 electrically connected to the sensor element 22 are provided on the first substrate 21.

A circuit having a function of selecting a plurality of sensor elements 22 can be applied to at least one of the circuit 23 and the circuit 24. A circuit having a function of outputting a signal from the sensor element 22 can be applied to at least one of the circuit 23 and the circuit 24.

The FPC 41 has a function of supplying a signal from the outside to at least one of the sensor element 22, the circuit 23, and the circuit 24. Alternatively, the FPC 41 has a function of outputting a signal from at least one of the sensor element 22, the circuit 23, and the circuit 24 to the outside.

The display panel 30 includes a display unit 32 on the second substrate 31. The display unit 32 includes a plurality of pixels 33 arranged in a matrix. In addition, a circuit 34 that is electrically connected to the pixel 33 in the display portion 32 is preferably provided over the second substrate 31. As the circuit 34, for example, a circuit functioning as a gate driving circuit can be applied.

The FPC 42 has a function of supplying an external signal to at least one of the display unit 32 and the circuit 34. Also. In FIG. 1, the first substrate 31 includes a terminal 43. For example, an FPC is attached to the terminal 43, an IC that functions as a source driving circuit is directly mounted by a COG method or a COF method, or an FPC on which an IC is mounted,
It is possible to attach TAB, TCP, or the like. The display panel 30 has an IC or FP.
A form in which a connector such as C is mounted can also be called a display panel module.

The touch panel module 10 of one embodiment of the present invention can output position information based on a change in capacitance when a touch operation is performed by the plurality of sensor elements 22. Display unit 3
2 can display an image. That is, the touch panel module 10 can be rephrased as an input / output device.

[About laminated structure of touch panel]
FIG. 2A is a schematic diagram in which a region indicated by a broken line in FIG.

2A illustrates the capacitor 110 and the pixel 33 included in the sensor element 22 illustrated in FIG.
In this example, wiring 25 and wiring 26 are provided.

A plurality of capacitor elements 110 are arranged in a matrix. The wiring 25 is arranged between two adjacent capacitive elements 110, and a plurality of wirings 26 are arranged in a direction intersecting with the wiring 25.

A plurality of pixels 33 are arranged in a matrix. Some of the plurality of pixels 33 are provided so as to overlap with the capacitor 110, and the other part is provided so as to overlap with a region between two adjacent capacitors 110.

The pixel 33 includes at least a display element. As the display element, for example, organic EL (El
It is preferable to apply a light-emitting element such as an electro luminescence element. In addition, as a display element, an element that performs display by an electrophoresis method, an electronic powder fluid method, an electrowetting method, or the like (also referred to as electronic ink), a shutter-type MEMS display device, an optical interference-type MEMS display device, a liquid crystal device, or the like Various display elements can be used.

The present invention can also be applied to a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, a direct view liquid crystal display, and the like. Note that in the case of realizing a transflective liquid crystal display or a reflective liquid crystal display, part or all of the pixel electrode may have a function as a reflective electrode. For example, part or all of the pixel electrode may have aluminum, silver, or the like. Further, in that case, under the reflective electrode, S
A storage circuit such as a RAM may be provided. Thereby, power consumption can be further reduced. In addition, a structure suitable for a display element to be applied can be selected from various pixel circuits and used.

FIG. 2B is a schematic diagram in which a stacked structure is developed in a region overlapping with the capacitor 110. As shown in FIG. 2B, a first conductive layer 111, an insulating layer 112, a second conductive layer 113, a light shielding layer 115, and a colored layer 114r are provided between the first substrate 21 and the second substrate 31. , Colored layer 1
14g, the colored layer 114b, the third conductive layer 116, and the pixel 33 are arranged. here,
The third conductive layer 116 corresponds to one of the wirings 26 illustrated in FIG.

In the following description, the colored layer 114r, the colored layer 114g, and the colored layer 114b are not distinguished from each other, and may be simply referred to as the colored layer 114 when the matters common to them are described.

An insulating layer 112 is sandwiched between the first conductive layer 111 and the second conductive layer 113, and these constitute the capacitor 110.

Each colored layer 114 has a function of transmitting light in a specific wavelength band. Here, the colored layer 11
4r transmits red light, the colored layer 114g transmits green light, and the colored layer 114b transmits blue light. By disposing the pixel 33 and one of the colored layers 114 so as to overlap each other,
Only light in a specific wavelength band among the light from the pixels 33 can be transmitted to the first substrate 21 side.

The light shielding layer 115 has a function of shielding visible light. The light shielding layer 115 is disposed so as to overlap with a region between two adjacent colored layers 114. FIG. 2B illustrates an example in which the light-blocking layer 115 has an opening, and the opening is disposed so as to overlap with the pixel 33 and the coloring layer 114.

Note that FIG. 2B illustrates a structure in which the light shielding layer 115 is disposed on the first substrate 21 side with respect to the colored layer 114, but the colored layer 114 is disposed on the first substrate 21 side with respect to the light shielding layer 115. May be.

The first conductive layer 111, the insulating layer 112, and the second conductive layer 113 each have a region overlapping with the pixel 33 and the coloring layer 114. Therefore, the first conductive layer 111, the insulating layer 112,
The second conductive layer 113 is preferably formed using a material that transmits visible light.

The third conductive layer 116 is disposed so as to be positioned between the light shielding layer 115 and the pixel 33.
In other words, the third conductive layer 116 is located closer to the second substrate 31 than the light shielding layer 115, and
In addition, it is located closer to the first substrate 21 than the pixel 33.

The third conductive layer 116 is preferably disposed so as to overlap the light shielding layer 115. With such a structure, the pixel 33 and the third conductive layer 116 do not overlap with each other. Therefore, even if a material that blocks visible light is used for the third conductive layer 116, the aperture ratio of the pixel 33 is reduced. Can be prevented.

FIG. 3 shows a case where the optical adjustment layer 119 is disposed between two adjacent first conductive layers 111.

By providing the optical adjustment layer 119, the pattern of the first conductive layer 111 is hardly visible when viewed from the first substrate 21 side, and the display quality can be improved.

As the optical adjustment layer 119, a material having optical properties (transmittance, refractive index, reflectance, etc.) close to those of the first conductive layer 111 can be used. For example, a material whose transmittance is within plus or minus 5% of the transmittance of the first conductive layer 111 can be used. In particular, the optical adjustment layer 11
9 is preferably made of the same material as the first conductive layer 111. At this time, by forming the first conductive layer 111 and the optical adjustment layer 119 simultaneously by processing the same conductive film,
This is preferable because the process can be simplified.

In the case where a conductive material is used for the optical adjustment layer 119, a configuration in which a predetermined potential can be supplied to the optical adjustment layer 119 is preferable. For example, a configuration in which a fixed potential such as a common potential or a ground potential is supplied to the optical adjustment layer 119 may be employed. Alternatively, the first conductive layer 111 and the second conductive layer 113 may be electrically connected to each other.

FIG. 4 shows an example of the arrangement position of each component when viewed from the first substrate 21 side. Here, an example is shown in which a bottom-gate transistor 251 is provided on the first substrate 21 side.

In FIG. 4, the transistor 251, the first conductive layer 111, the second conductive layer 113, and the light shielding layer 1
15 shows third conductive layers 116a to 116g and fourth conductive layers 117a and 117b.

The transistor 251 is connected to the gate electrode 13 from the first substrate 21 side (that is, the front side in the drawing).
1, a semiconductor layer 132, an electrode 133a, and an electrode 133b. The electrode 133a functions as one of a source and a drain, and the electrode 133b functions as the other of the source and the drain.

The light shielding layer 115 has a plurality of openings arranged in a matrix. Although not shown here, each opening of the light shielding layer 115 is provided so as to overlap the pixel 33 and the coloring layer 114.

Since the third conductive layer 116a to the third conductive layer 116g are arranged so as to overlap with the light shielding layer 115, the third conductive layer 116a to the third conductive layer 116g are visible when viewed from the first substrate side as shown in FIG. Absent.

Further, the transistor 251 is provided so as to overlap with the light shielding layer 115 as illustrated in FIG. Such a configuration is preferable because the aperture ratio of the pixel is not lowered.

In addition, the gate electrode 131, the semiconductor layer 132, and the electrode 133 included in the transistor 251.
a and the electrode 133b are processed into an island shape so that each area is as small as possible. By setting it as such a structure, the area visually recognized from the detection surface side (namely, the 1st board | substrate 21 side) can be made small, and can be made not conspicuous, and the visibility of a touch panel can be improved.

FIG. 4 illustrates an example in which the semiconductor layer 132 included in the transistor 251 is provided so as to overlap the gate electrode 131. With such a structure, even when external light is irradiated to the transistor 251 from the detection surface side, the semiconductor layer 132 can be prevented from being irradiated with light. Therefore, a change in electrical characteristics of the transistor due to external light irradiation can be suppressed, and a highly reliable touch sensor can be realized. Alternatively, since it is not necessary to connect a compensation circuit or the like that reduces the influence of external light irradiation, the configuration of the touch sensor circuit can be simplified.

The first conductive layer 111 has an island shape. The second conductive layer 113 includes a contact portion between a first conductive layer 111 and a third conductive layer 116a, which will be described later, and a region overlapping with a region including the periphery thereof, and a region including the transistor 251 and the periphery thereof. An opening is provided in the overlapping part.

The first conductive layer 111 is connected to the third conductive layer 116 through an opening provided in the light shielding layer 115 or the like.
It is electrically connected to a. The third conductive layer 116a is electrically connected to the electrode 133b through an opening provided in the light shielding layer 115 and the like. The electrode 133a is electrically connected to the third conductive layer 116b through an opening provided in the light shielding layer 115 and the like. Third conductive layer 116
b and the third conductive layer 116d are electrically connected through the fourth conductive layer 117a.
The third conductive layers 116e and 116f are each electrically connected to the gate electrode 131 through an opening provided in the light shielding layer 115 and the like. Third conductive layer 116f and third conductive layer 11
6g is electrically connected through the fourth conductive layer 117b. The third conductive layer 116c is disposed so as to intersect with the fourth conductive layers 117a and 117b.

In this manner, the fourth conductive layer 117 positioned above or below the third conductive layer 116 is disposed at a location where two wirings on the same plane formed by the third conductive layer 116 intersect. Thus, the two wirings can be arranged so as to intersect each other without being electrically short-circuited.

At this time, similarly to the third conductive layer 116, the fourth conductive layer 117 is visually recognized from the detection surface side by being arranged on the second substrate 31 side (that is, the back side of the drawing) than the light shielding layer 115. This can be suppressed.

[Section configuration example]
Hereinafter, a cross-sectional configuration example of the touch panel module 10 will be described.

[Cross-section configuration example 1]
FIG. 5A is a schematic cross-sectional view of a touch panel module of one embodiment of the present invention. FIG.
The touch panel module illustrated in A) includes an active matrix touch sensor and a display element between a pair of substrates, and thus can be thinned. Note that in this specification and the like, a touch sensor in which each of a plurality of sensor elements has an active element is referred to as an active matrix touch sensor.

The touch panel module has a configuration in which a first substrate 21 and a second substrate 31 are bonded together by an adhesive layer 220. On the first substrate 21, the capacitor 110, the transistor 251, the transistor 252, the contact portion 253, the coloring layer 114, the light shielding layer 115, the third
Conductive layers 116a to 116d, a fourth conductive layer 117a, and the like are provided. Over the second substrate 31, transistors 201 to 203, a light-emitting element 204, a contact portion 205, and the like are provided.

An insulating layer 212, an insulating layer 213, and an insulating layer 21 are provided on the second substrate 31 through an adhesive layer 211.
4, an insulating layer 215, an insulating layer 216, an insulating layer 217, an insulating layer 218, a spacer 219, a conductive layer 225, and the like.

A light-emitting element 204 is provided over the insulating layer 217. The light-emitting element 204 includes the first electrode 2
21, an EL layer 222, and a second electrode 223 (see FIG. 5B). The first electrode 2
21 and an EL layer 222 are provided with an optical adjustment layer 224. The insulating layer 218 is
The first electrode 221 and the end of the optical adjustment layer 224 are provided so as to cover.

FIG. 5A illustrates a structure in which the pixel 33 includes a transistor 201 for current control and a transistor 202 for switching control. In the transistor 201, one of a source and a drain is electrically connected to the first electrode 221 through the conductive layer 225.

  FIG. 5A illustrates an example in which a transistor 203 is provided in the circuit 34.

FIG. 5A illustrates an example in which a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gate electrodes is used as the transistor 201 and the transistor 203. Such a transistor can have higher field-effect mobility than other transistors, and can increase on-state current. As a result, a circuit capable of high speed operation can be manufactured. Furthermore, the area occupied by the circuit portion can be reduced. By applying a transistor with a large on-state current, signal delay in each wiring can be reduced even if the number of wirings is increased when a display panel or a touch panel is increased in size or increased in definition. Can be suppressed.

Note that the transistor included in the circuit 34 and the transistor included in the pixel 33 may have the same structure. The transistors included in the circuit 34 may all have the same structure,
A combination of transistors having different structures may be used. In addition, the transistors included in the pixel 33 may have the same structure or may be combined with transistors having different structures. Further, a transistor (such as a transistor 251 or a transistor 252) provided on the first substrate 21 side may have a similar structure or a combination of transistors having different structures.

The light-emitting element 204 is a light-emitting element having a top emission structure, and emits light to the second electrode 223 side. Overlaid on the light emitting region of the light emitting element 204, the transistor 201 and the transistor 2
In addition to 02 and the like, the aperture ratio of the pixel 33 can be increased by arranging a capacitive element and a wiring.

On the second substrate 31 side of the first substrate 21, an insulating layer 262, an insulating layer 263, an insulating layer 264, an insulating layer 265, a first conductive layer 111, an insulating layer 112, and a second layer are provided via an adhesive layer 261. Conductive layer 113, insulating layer 266, insulating layer 267, insulating layer 268, colored layer 114, light shielding layer 115,
The third conductive layers 116a to 116d, the fourth conductive layer 117a, and the like are included. Here, FIG.
Part of A) shows a cross-sectional structure corresponding to the cutting line AB shown in FIG.

The first conductive layer 111 is electrically connected to the third conductive layer 116 a through openings provided in the insulating layer 112, the insulating layer 266, the light shielding layer 115, and the insulating layer 267. The third conductive layer 116a includes an insulating layer 264, an insulating layer 265, an insulating layer 112, an insulating layer 266, and a light shielding layer 115.
The transistor 251 is electrically connected to one of a source and a drain through an opening provided in the insulating layer 267.

The third conductive layer 116b and the other of the source and the drain of the transistor 251 are electrically connected through an opening provided in each insulating layer therebetween. Fourth conductive layer 117a
Is electrically connected to the third conductive layers 116 b and 116 d through an opening provided in the insulating layer 268. In addition, a third conductive layer 116c is disposed so as to overlap with the fourth conductive layer 117a.

Note that although FIG. 5A illustrates a structure in which the fourth conductive layer 117a is disposed on the second substrate 31 side with respect to the third conductive layer 116a and the like, the stacking order may be changed. That is, the third conductive layer 116 a and the like are disposed on the second substrate 31 side with respect to the insulating layer 268, and the fourth conductive layer 117 is disposed.
a or the like may be disposed between the insulating layer 267 and the insulating layer 268.

The light-emitting region of the light-emitting element 204 and the colored layer 114 are provided so as to overlap each other, and light emitted from the light-emitting element 204 passes through the colored layer 114 and is emitted to the first substrate 21 side. As shown in FIG. 5A, in the case where the first conductive layer 111 and the second conductive layer 113 are placed so as to overlap with the light-emitting element 204, they have conductivity which transmits light to visible light. It is preferable to use a material.

A flexible touch panel can be realized by using a flexible material for the first substrate 21 and the second substrate 31.

The touch panel of one embodiment of the present invention uses a color filter method. For example, the color layer 114 may have a configuration in which one color is expressed by pixels of three colors to which any of R (red), G (green), and B (blue) is applied. In addition to this, a configuration in which W (white) or Y (yellow) pixels are applied may be employed.

By the combination of the microcavity structure including the coloring layer 114 and the optical adjustment layer 224, light with high color purity can be extracted from the touch panel of one embodiment of the present invention. The thickness of the optical adjustment layer 224 may be different depending on the color of each pixel. In addition, some pixels may have no optical adjustment layer 224.

Further, an EL layer that emits white light is preferably used as the EL layer 222 included in the light-emitting element 204. By using such a light-emitting element 204, it is not necessary to separately apply the EL layer 222 to each pixel, so that cost can be reduced and high definition of the pixel can be easily achieved. Further, by changing the thickness of the optical adjustment layer 224 in each pixel, light emission having a wavelength suitable for each pixel can be extracted, and color purity can be improved. Note that the EL layer 222 may be separately applied to each pixel, and in that case, the optical adjustment layer 224 may not be used.

Each insulating layer or the like located in a region overlapping with the contact portion 205 provided on the second substrate 31 is provided with an opening portion, and the contact portion 205 is formed by the connection layer 260 disposed in the opening portion.
And the FPC 41 are electrically connected. Each insulating layer or the like located in a region overlapping with the first substrate 21 is provided with an opening, and the contact portion 253 and the FPC 42 are electrically connected through the connection layer 210 disposed in the opening. Yes.

FIG. 5A illustrates a structure in which the contact portion 205 includes a conductive layer formed by processing the same conductive film as a source electrode and a drain electrode of a transistor. The contact portion 253 includes a conductive layer formed by processing the same conductive film as the gate electrode of the transistor, a conductive layer formed by processing the same conductive film as the source electrode and the drain electrode of the transistor, and a second layer The structure which has the laminated structure of the conductive layer formed by processing the same electrically conductive film as this conductive layer 113 is shown. Thus, it is preferable that the contact portion has a structure in which a plurality of conductive layers are stacked because not only the electrical resistance can be reduced but also the mechanical strength can be increased.

As the connection layer 210 and the connection layer 260, an anisotropic conductive film (ACF: Anisotr) is used.
optical conductive film (ACP) or anisotropic conductive paste (ACP: Ani)
Sotropic Conductive Paste) or the like can be used.

The insulating layer 212 and the insulating layer 262 are preferably formed using a material from which impurities such as water and hydrogen hardly diffuse. That is, the insulating layer 212 and the insulating layer 262 can function as barrier films. With such a structure, even when a material having moisture permeability is used as the first substrate 21 or the second substrate 31, it is effective that impurities are diffused from the outside to the light-emitting element 204 and each transistor. A highly reliable touch panel can be realized.

[About each component]
Below, each component shown above is demonstrated.

The transistor includes a conductive layer that functions as a gate electrode, a semiconductor layer, a conductive layer that functions as a source electrode, a conductive layer that functions as a drain electrode, and an insulating layer that functions as a gate insulating layer. FIG. 5A illustrates the case where a bottom-gate transistor is used.

Note that there is no particular limitation on the structure of the transistor included in the touch panel of the present invention. For example, a staggered transistor or an inverted staggered transistor may be used. Further, a top-gate or bottom-gate transistor structure may be employed. A semiconductor material used for the transistor is not particularly limited, and examples thereof include an oxide semiconductor, silicon, and germanium.

There is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor,
Any of semiconductors having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystal region) may be used. It is preferable to use a crystalline semiconductor because deterioration of transistor characteristics can be suppressed.

As a semiconductor material used for the transistor, for example, a Group 4 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.

In particular, an oxide semiconductor is preferably used for a semiconductor in which a channel of a transistor is formed. In particular, an oxide semiconductor having a larger band gap than silicon is preferably used. It is preferable to use a semiconductor material with a wider band gap and lower carrier density than silicon because current in an off state of the transistor can be reduced.

For example, as the oxide semiconductor, at least indium (In) or zinc (Zn)
) Is preferably included. More preferably, an In-M-Zn-based oxide (M is Al, Ti,
An oxide represented by a metal such as Ga, Ge, Y, Zr, Sn, La, Ce, or Hf.

In particular, the semiconductor layer has a plurality of crystal parts, and the crystal part has a c-axis oriented substantially perpendicular to the formation surface of the semiconductor layer or the top surface of the semiconductor layer, and there is no grain between adjacent crystal parts. An oxide semiconductor film having no boundary is preferably used.

Since such an oxide semiconductor does not have a crystal grain boundary, a crack in the oxide semiconductor film due to stress when the display panel is bent is suppressed. Therefore,
Such an oxide semiconductor can be preferably used for a touch panel that is flexible and curved.

In addition, when such an oxide semiconductor is used for a semiconductor layer, a change in electrical characteristics is suppressed and a highly reliable transistor can be realized.

In addition, due to the low off-state current, the charge accumulated in the capacitor through the transistor can be held for a long time. By applying such a transistor to a pixel, the driving circuit can be stopped while maintaining the gradation of an image displayed in each display region. As a result, a display device with extremely reduced power consumption can be realized.

Alternatively, silicon is preferably used for a semiconductor in which a channel of the transistor is formed. Although amorphous silicon may be used as silicon, it is particularly preferable to use silicon having crystallinity. For example, microcrystalline silicon, polycrystalline silicon, single crystal silicon, or the like is preferably used. In particular, polycrystalline silicon can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon. By applying such a polycrystalline semiconductor to a pixel, the aperture ratio of the pixel can be improved. In addition, even when the pixel is provided with extremely high definition, the gate driver circuit and the source driver circuit can be formed over the same substrate as the pixel, and the number of components included in the electronic device can be reduced.

In addition to the gate, source, and drain of the transistor, materials that can be used for conductive layers such as various wirings and electrodes constituting the touch panel include aluminum, titanium,
A single metal composed of chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy containing this as a main component is used as a single layer structure or a multilayer structure. For example, a single layer structure of an aluminum film containing silicon, a two layer structure in which an aluminum film is stacked on a titanium film, a two layer structure in which an aluminum film is stacked on a tungsten film, and a copper film on a copper-magnesium-aluminum alloy film Two-layer structure to stack, two-layer structure to stack a copper film on a titanium film, two-layer structure to stack a copper film on a tungsten film, a titanium film or a titanium nitride film, and an overlay on the titanium film or titanium nitride film A three-layer structure in which an aluminum film or a copper film is stacked and a titanium film or a titanium nitride film is further formed thereon, a molybdenum film or a molybdenum nitride film, and an aluminum film or a copper layer stacked on the molybdenum film or the molybdenum nitride film There is a three-layer structure in which films are stacked and a molybdenum film or a molybdenum nitride film is further formed thereon. Note that a transparent conductive material containing indium oxide, tin oxide, or zinc oxide may be used. Further, it is preferable to use copper containing manganese because the controllability of the shape by etching is increased.

As the light-transmitting conductive material, conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added, or graphene can be used. Alternatively, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material can be used. Alternatively, a nitride (eg, titanium nitride) of the metal material may be used. Note that in the case where a metal material or an alloy material (or a nitride thereof) is used, it may be thin enough to have a light-transmitting property. In addition, a stacked film of the above materials can be used as a conductive layer. For example, it is preferable to use a laminated film of an alloy of silver and magnesium and indium tin oxide because the conductivity can be increased.

Examples of insulating materials that can be used for various insulating layers, spacers 219, and the like include resins such as acrylic and epoxy, resins having a siloxane bond, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, and the like. Inorganic insulating materials can also be used.

Further, as described above, the light-emitting element is preferably provided between a pair of insulating films with low water permeability. Thereby, impurities such as water can be prevented from entering the light emitting element, and a decrease in reliability of the light emitting device can be suppressed.

Examples of the low water-permeable insulating film include a film containing nitrogen and silicon such as a silicon nitride film and a silicon oxynitride film, and a film containing nitrogen and aluminum such as an aluminum nitride film. Also,
A silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

For example, the water vapor transmission rate of an insulating film having low water permeability is 1 × 10 ⁻⁵ [g / m ² · day] or less, preferably 1 × 10 ⁻⁶ [g / m ² · day] or less, more preferably 1 × 10 ⁻⁷ [
g / m ² · day] or less, and more preferably 1 × 10 ⁻⁸ [g / m ² · day] or less.

As each adhesive layer, a curable resin such as a thermosetting resin, a photocurable resin, or a two-component mixed curable resin can be used. For example, a resin such as acrylic, urethane, epoxy, or a resin having a siloxane bond can be used.

The EL layer 222 includes at least a light emitting layer. The EL layer 222 is a layer other than the light emitting layer.
Substances with a high hole-injecting property, substances with a high hole-transporting property, hole blocking materials, substances with a high electron-transporting property, substances with a high electron-injecting property, or bipolar substances (having electron-transporting and hole-transporting properties) A layer containing a high substance) or the like may be further included.

For the EL layer 222, either a low molecular compound or a high molecular compound can be used, and an inorganic compound may be included. The layers constituting the EL layer 222 can be formed by a method such as a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an ink jet method, or a coating method.

Examples of a material that can be used for the light-blocking layer 115 include carbon black, metal oxide, and a composite oxide including a solid solution of a plurality of metal oxides.

As a material that can be used for the colored layer 114, a metal material, a resin material, a resin material containing a pigment or a dye, or the like can be given.

Note that a stacked structure in which colored layers 114 of different colors are stacked instead of the light shielding layer 115 may function as the light shielding layer 115. For example, a part of two colored layers 114 provided to overlap each of the adjacent pixels 33 may be overlapped and used as the light shielding layer 115.

In addition, the light shielding layer 115 may be disposed only between pixels of different colors without being disposed between pixels of the same color among adjacent pixels. In that case, the region between two adjacent pixels of the same color and the third conductive layer 116 (and / or the fourth conductive layer 117) may be arranged so as to overlap each other. Alternatively, a light-transmitting material is used as the fourth conductive layer 117, and the light-blocking layer 11 is interposed through the fourth conductive layer 117 disposed in a portion where the light-blocking layer 115 is not provided.
The two third conductive layers 116 provided so as to overlap with 5 may be electrically connected.

[Example of production method]
Here, a method for manufacturing a flexible touch panel will be described.

Here, for convenience, a configuration including pixels and circuits, a configuration including an optical member such as a color filter, or a configuration including a touch sensor is referred to as an element layer. The element layer includes, for example, a display element,
In addition to the display element, an element such as a wiring electrically connected to the display element or a transistor used for a pixel or a circuit may be provided.

Here, a support (for example, the first substrate 21 or the second substrate 31) having an insulating surface on which an element layer is formed is referred to as a base material.

As a method of forming an element layer on a base material having a flexible insulating surface, a method of forming an element layer directly on the base material, and an element layer on a supporting base material having rigidity different from that of the base material After forming, the element layer and the supporting base material are peeled off, and the element layer is transferred to the base material.

When the material which comprises a base material has heat resistance with respect to the heat concerning the formation process of an element layer, when an element layer is directly formed on a base material, since a process is simplified, it is preferable. At this time, it is preferable to form the element layer in a state in which the base material is fixed to the support base material, because it is easy to transport the device inside and between the devices.

In the case of using a method in which an element layer is formed on a supporting substrate and then transferred to the substrate, a peeling layer and an insulating layer are first stacked on the supporting substrate, and an element layer is formed on the insulating layer. Then, a support base material and an element layer are peeled and it transfers to a base material. At this time, a material that causes peeling in the interface between the support base and the release layer, the interface between the release layer and the insulating layer, or the release layer may be selected.

For example, a layer including a high-melting-point metal material such as tungsten and a layer including an oxide of the metal material are stacked as the separation layer, and a layer in which a plurality of layers of silicon nitride or silicon oxynitride are stacked is preferably used. . Use of a refractory metal material is preferable because it increases the degree of freedom in the element layer formation process.

Peeling may be performed by applying a mechanical force, etching the peeling layer, or dropping a liquid on a part of the peeling interface to permeate the entire peeling interface. Alternatively, peeling may be performed by applying heat to the peeling interface using a difference in thermal expansion.

In the case where peeling is possible at the interface between the support base and the insulating layer, the peeling layer may not be provided.
For example, glass is used as a supporting substrate, an organic resin such as polyimide is used as an insulating layer, a part of the organic resin is locally heated using a laser beam or the like, and a starting point of peeling is formed. Peeling may be performed at the interface of the insulating layer. Alternatively, a metal layer is provided between the support base and the insulating layer made of an organic resin, and the metal layer is heated by passing an electric current through the metal layer, whereby peeling is performed at the interface between the metal layer and the insulating layer. May be. At this time, an insulating layer made of an organic resin can be used as a base material.

Examples of flexible base materials include polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resins, polyimide resins, polymethyl methacrylate resins, polycarbonate (PC) resins, and polyether sulfones. (PES) resin, polyamide resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyvinyl chloride resin and the like. In particular, a material having a low thermal expansion coefficient is preferably used. For example, a polyamideimide resin, a polyimide resin, PET, or the like having a thermal expansion coefficient of 30 × 10 ⁻⁶ / K or less can be suitably used. Also,
A substrate in which a fibrous body is impregnated with a resin (also referred to as a prepreg) or a substrate in which an inorganic filler is mixed with an organic resin to reduce the thermal expansion coefficient can also be used.

When a fibrous body is included in the material, a high-strength fiber of an organic compound or an inorganic compound is used for the fibrous body. The high-strength fiber specifically refers to a fiber having a high tensile modulus or Young's modulus, and representative examples include polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramid fiber, Examples include polyparaphenylene benzobisoxazole fibers, glass fibers, and carbon fibers. Examples of the glass fiber include glass fibers using E glass, S glass, D glass, Q glass, and the like. These may be used in the form of a woven fabric or a non-woven fabric, and a structure obtained by impregnating the fiber body with a resin and curing the resin may be used as a flexible substrate. When a structure made of a fibrous body and a resin is used as the flexible substrate, it is preferable because reliability against breakage due to bending or local pressing is improved.

Alternatively, glass, metal, or the like thin enough to have flexibility can be used for the base material. Alternatively, a composite material in which glass and a resin material are bonded together may be used.

For example, in the case of the configuration shown in FIG. 5A, the first release layer and the insulating layer 26 are formed on the first support base.
After forming 2 in order, an upper layer structure is formed. Separately from this, after the second release layer and the insulating layer 212 are formed in this order on the second support base material, the upper layer structure is formed. Subsequently, the first support base material and the second support base material are bonded together by the adhesive layer 220. Thereafter, the second supporting base and the second peeling layer are removed by peeling at the interface between the second peeling layer and the insulating layer 212, and the insulating layer 212 and the second substrate 31 are bonded by the adhesive layer 211. Paste. In addition, the first supporting substrate and the first are peeled off at the interface between the first peeling layer and the insulating layer 262.
The peeling layer is removed, and the insulating layer 262 and the first substrate 21 are bonded to each other with the adhesive layer 261.
Note that either side may be peeled and bonded first.

  The above is the description of the method for manufacturing the flexible touch panel.

[Cross-section configuration example 2]
FIG. 6 shows a cross-sectional configuration example in which a part of the configuration is different from that in FIG. The configuration shown in FIG. 6 is mainly different from the configuration shown in FIG. 5 in that the configuration of the first conductive layer 111 is different.

In FIG. 6, a case where the first conductive layer 111a having a semiconductor layer formed by processing the same film as the semiconductor layers of the transistors 251 and 252 is applied instead of the first conductive layer 111 in FIG. Show. The first conductive layer 111 a is provided in contact with the insulating layer 265.

Here, the first conductive layer 111a preferably contains an oxide semiconductor. An oxide semiconductor is a semiconductor material whose resistance can be controlled by oxygen vacancies in the film and / or the concentration of impurities such as hydrogen and water. Therefore, even when the semiconductor layer applied to the first conductive layer 111a and the semiconductor layer applied to the transistor are formed by processing the same semiconductor film, oxygen vacancy or The resistivity of these semiconductor layers can be controlled by selectively performing a process for increasing the impurity concentration / and a process for decreasing the oxygen deficiency or / and the impurity concentration.

Specifically, plasma treatment is performed on the oxide semiconductor layer included in the first conductive layer 111a functioning as an electrode of the capacitor 110, so that oxygen vacancies in the oxide semiconductor layer are increased. Alternatively, by increasing impurities such as hydrogen and water in the oxide semiconductor layer, the first conductive layer 111a including an oxide semiconductor with high carrier density and low resistance can be obtained. Further, an insulating film containing hydrogen (insulating layer 265) is formed in contact with the oxide semiconductor layer, and hydrogen is diffused from the insulating film containing hydrogen into the oxide semiconductor layer, whereby oxidation with high carrier density and low resistance is achieved. It can be a physical semiconductor layer. Such an oxide semiconductor layer can be used for the first conductive layer 111a.

On the other hand, an insulating layer 264 is provided over the transistor 251 and the transistor 252 so that the oxide semiconductor layer is not exposed to the plasma treatment. The insulating layer 264 is provided so that the oxide semiconductor layer is not in contact with the insulating layer 265 containing hydrogen.
By using an insulating film capable of releasing oxygen as the insulating layer 264, oxygen can be supplied to the oxide semiconductor layer of the transistor. The oxide semiconductor layer to which oxygen is supplied is
Oxygen vacancies are reduced in the film or at the interface of the film, so that a high-resistance oxide semiconductor layer is obtained. In addition,
As the insulating film from which oxygen can be released, for example, a silicon oxide film, a silicon oxynitride film, or the like can be used.

As a plasma treatment performed on the oxide semiconductor layer, typically, a rare gas (He, Ne) is used.
, Ar, Kr, Xe), plasma treatment using a gas containing one kind selected from phosphorus, boron, hydrogen, and nitrogen. More specifically, plasma treatment under Ar atmosphere,
Examples thereof include plasma treatment under a mixed gas atmosphere of Ar and hydrogen, plasma treatment under an ammonia atmosphere, plasma treatment under a mixed gas atmosphere of Ar and ammonia, and plasma treatment under a nitrogen atmosphere.

By the above plasma treatment, oxygen vacancies are formed in the oxide semiconductor layer in the lattice from which oxygen is released (or a portion from which oxygen is released). The oxygen deficiency may be a factor that generates carriers. Further, hydrogen is supplied from the insulating layer film adjacent to the oxide semiconductor layer, more specifically, below or above the oxide semiconductor layer, and when hydrogen enters the oxygen vacancies, electrons as carriers are generated. There is a case. Therefore, the oxide semiconductor layer applied to the first conductive layer 111a in which oxygen vacancies are increased by the plasma treatment has a higher carrier density than the oxide semiconductor layer applied to the transistor.

On the other hand, an oxide semiconductor layer applied to a transistor in which oxygen vacancies are reduced and the hydrogen concentration is reduced can be said to be a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer. Here, substantially intrinsic means that the carrier density of the oxide semiconductor is less than 1 × 10 ¹⁷ / cm ³ , preferably less than 1 × 10 ¹⁵ / cm ³ , and more preferably 1 × 10 10. ¹
It indicates being less than ³ / cm ³ . Alternatively, a low impurity concentration and a low density of defect states (small number of oxygen vacancies) is called high-purity intrinsic or substantially high-purity intrinsic. An oxide semiconductor that is highly purified intrinsic or substantially highly purified intrinsic has few carrier generation sources, and thus can have a low carrier density. Therefore, a transistor in which a channel region is formed in the oxide semiconductor film easily has electrical characteristics (also referred to as normally-off characteristics) in which the threshold voltage is positive. In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has a low defect level density; therefore, the trap level density can be reduced.

A highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor layer has an extremely small off-state current, an element having a channel width of 1 × 10 ⁶ μm and a channel length L of 10 μm. When the voltage between the drain electrodes (drain voltage) is in the range of 1V to 10V, it is possible to obtain a characteristic that the off-current is less than the measurement limit of the semiconductor parameter analyzer, that is, 1 × 10 ⁻¹³ A or less. Accordingly, the transistor 251 or the transistor 252 or the like in which a channel region is formed in the oxide semiconductor layer is a highly reliable transistor with little variation in electrical characteristics. Note that a similar oxide semiconductor layer is preferably used for the transistor 201, the transistor 202, the transistor 203, and the like provided on the second substrate 31 side.

In FIG. 6, the insulating layer 264 is provided so that a region overlapping with the first conductive layer 111a functioning as an electrode of the capacitor 110 is selectively removed. Insulating layer 2
65 may be removed from the first conductive layer 111a after being formed in contact with the first conductive layer 111a. As the insulating layer 265, for example, an insulating film containing hydrogen, in other words, an insulating film capable of releasing hydrogen, typically a silicon nitride film, is used, whereby the first conductive layer 11 is used.
Hydrogen can be supplied to la. The insulating film capable of releasing hydrogen preferably has a hydrogen concentration in the film of 1 × 10 ²² atoms / cm ³ or more. By forming such an insulating film in contact with the first conductive layer 111a, hydrogen can be effectively contained in the first conductive layer 111a. As described above, the resistance of the oxide semiconductor layer can be arbitrarily adjusted by changing the structure of the insulating film in contact with the oxide semiconductor layer in combination with the plasma treatment described above. Note that a layer including an oxide semiconductor with sufficiently low resistance can be referred to as an oxide conductor layer.

Hydrogen contained in the first conductive layer 111a reacts with oxygen bonded to metal atoms to become water, and forms oxygen vacancies in a lattice from which oxygen is released (or a portion from which oxygen is released). When hydrogen enters the oxygen vacancies, electrons serving as carriers may be generated. In some cases, a part of hydrogen is bonded to oxygen bonded to a metal atom, so that an electron serving as a carrier is generated. Therefore, the oxide semiconductor included in the first conductive layer 111a containing hydrogen has a higher carrier density than the oxide semiconductor used for the transistor.

In the oxide semiconductor layer in which the channel region of the transistor is formed, hydrogen is preferably reduced as much as possible. Specifically, in an oxide semiconductor layer, secondary ion mass spectrometry (
The hydrogen concentration obtained by SIMS (Secondary Ion Mass Spectrometry) is 2 × 10 ²⁰ atoms / cm ³ or less, preferably 5 × 10 ¹⁹ a.
toms / cm ³ or less, more preferably 1 × 10 ¹⁹ atoms / cm ³ or less, 5 × 10
Less than ¹⁸ atoms / cm ³ , preferably 1 × 10 ¹⁸ atoms / cm ³ or less, more preferably 5 × 10 ¹⁷ atoms / cm ³ or less, and even more preferably 1 × 10 ¹⁶ atoms
s / cm ³ or less.

On the other hand, the oxide semiconductor included in the first conductive layer 111a functioning as an electrode of the capacitor 110 has a higher concentration of hydrogen and / or oxygen vacancies than an oxide semiconductor used for the transistor, and thus has a low resistance. ing.

The oxide semiconductor layer applied to the first conductive layer 111a and the transistor is typically I
n-Ga oxide, In-Zn oxide, In-M-Zn oxide (M is Mg, Al, Ti,
Ga, Y, Zr, La, Ce, Nd, or Hf). Note that the first conductive layer 111a and the oxide semiconductor layer used for the transistor have a light-transmitting property.

Note that the oxide semiconductor layer applied to the first conductive layer 111a and the transistor is In-M-
In the case of Zn oxide, when the sum of In and M is 100 atomic%, In is 25 at.
omic% or more, M is less than 75 atomic%, or In is 34 atomic% or more, M
Is less than 66 atomic%.

The energy gap of the first conductive layer 111a and the oxide semiconductor layer used for the transistor is preferably 2 eV or more, 2.5 eV or more, or 3 eV or more.

The thickness of the oxide semiconductor layer applied to the first conductive layer 111a and the transistor can be 3 nm to 200 nm, 3 nm to 100 nm, or 3 nm to 60 nm.

In the case where the oxide semiconductor layer applied to the first conductive layer 111a and the transistor is an In-M-Zn oxide, the atomic ratio of the metal element of the sputtering target used for forming the In-M-Zn oxide is In ≧ M and Zn ≧ M are preferably satisfied. As the atomic ratio of the metal elements of such a sputtering target, In: M: Zn = 1: 1: 1, In:
M: Zn = 1: 1: 1.2, In: M: Zn = 2: 1: 1.5, In: M: Zn = 2: 1
: 2.3, In: M: Zn = 2: 1: 3, In: M: Zn = 3: 1: 2, and the like are preferable. Note that the atomic ratio of the first conductive layer 111a to be formed and the oxide semiconductor layer applied to the transistor varies as an error by plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target. including.

In addition, when hydrogen is added to an oxide semiconductor in which oxygen vacancies are formed, hydrogen enters oxygen vacancy sites and donor levels are formed in the vicinity of the conduction band. As a result, the oxide semiconductor has high conductivity and becomes a conductor. A conductive oxide semiconductor can be referred to as an oxide conductor.
In general, an oxide semiconductor has a large energy gap and thus has a light-transmitting property with respect to visible light. On the other hand, an oxide conductor is an oxide semiconductor having a donor level in the vicinity of the conduction band. Therefore, the influence of absorption due to the donor level is small, and the light transmittance is comparable to that of an oxide semiconductor with respect to visible light. An oxide conductor is a degenerate semiconductor, and it can also be said that the conduction band edge and the Fermi level coincide or substantially coincide. Therefore, the oxide conductor film can be used for an electrode of a capacitor element.

With the structure illustrated in FIGS. 6A and 6B, the first conductive layer 111a can be formed at the same time in the manufacturing process of the transistor, so that the process can be simplified. In addition, since a photomask for forming the first conductive layer 111a in FIG. 6 is not required, manufacturing cost can be reduced.

  The above is the description of the cross-sectional configuration example.

Note that in this embodiment, an active matrix touch sensor in which a sensor element includes an active element such as a transistor is illustrated as a touch sensor, but a passive matrix touch sensor having no active element may be used. In this embodiment mode, a structure including two substrates, a first substrate that supports a touch sensor and a second substrate that supports a display element, is described; however, the present invention is not limited thereto. For example, the display element may be sandwiched between two substrates, and a first substrate that supports the touch sensor may be bonded to the display element, and the display device and the touch sensor may be configured to have two substrates. A structure in which four substrates are provided by bonding materials sandwiched between substrates may be employed.

This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 2)
In this embodiment, an example of a structure of a touch sensor of one embodiment of the present invention and an example of a driving method thereof will be described with reference to drawings.

[Configuration example]
FIG. 7A is a block diagram illustrating a structure of a touch panel (also referred to as an input / output device) of one embodiment of the present invention. FIG. 7B is a circuit diagram illustrating the configuration of the converter CONV. FIG. 7C is a circuit diagram illustrating the configuration of the sensor element 22. FIG. 7D-1 and FIG. 7D-2 are timing charts for explaining a method for driving the sensor element 22.

The touch sensor exemplified in this embodiment includes a plurality of sensor elements 22 arranged in a matrix and a signal line DL to which the plurality of sensor elements 22 arranged in the row direction are electrically connected.
And a flexible substrate 21 on which the sensor element 22, the scanning line G1, and the signal line DL are provided (see FIG. 7A).

For example, the plurality of sensor elements 22 can be arranged in a matrix of n rows and m columns (n and m are each a natural number of 1 or more).

The sensor element 22 includes a capacitive element C that functions as a detection element. The capacitor C corresponds to the capacitor 110 in the first embodiment. For example, the first electrode of the capacitor C corresponds to the first conductive layer 111 in Embodiment 1, and the second electrode corresponds to the second conductive layer 113.

Further, the third conductive layer 116 in Embodiment Mode 1 is used for wiring such as the signal line DL and the scanning line G1.
Alternatively, the fourth conductive layer 117 can be used.

The second electrode of the capacitor C is electrically connected to the wiring CS. Accordingly, the potential of the second electrode of the capacitor C can be controlled using the control signal supplied from the wiring CS.

The sensor element 22 of one embodiment of the present invention includes at least the transistor M1. A structure including the transistor M2 and / or the transistor M3 may be employed (see FIG. 7C).

In the transistor M1, the gate is electrically connected to the first electrode of the capacitor C, and the first electrode is electrically connected to the wiring VPI. The wiring VPI has a function of supplying a ground potential, for example.

The transistor M2 has a gate electrically connected to the scan line G1, a first electrode electrically connected to the second electrode of the transistor M1, and a second electrode electrically connected to the signal line DL. Yes. The scanning line G1 has a function of supplying a selection signal, for example. The signal line DL has a function of supplying the detection signal DATA, for example.

The transistor M3 has a gate electrically connected to the wiring RES, a first electrode electrically connected to the first electrode of the capacitor C, and a second electrode electrically connected to the wiring VRES. . The wiring RES has a function of supplying a reset signal, for example. The wiring VRES has a function of supplying a potential that can turn on the transistor M1, for example.

The capacitance of the capacitive element C changes, for example, when an object is close to the first electrode or the second electrode, or the distance between the first electrode and the second electrode is changed. This
The sensor element 22 can supply a detection signal DATA based on a change in the capacitance of the capacitive element C.

In addition, the wiring CS electrically connected to the second electrode of the capacitor C has a function of supplying a control signal for controlling the potential of the second electrode of the capacitor C.

Note that a node formed by electrically connecting the first electrode of the capacitor C, the gate of the transistor M1, and the first electrode of the transistor M3 is referred to as a node A.

FIG. 8A shows an example of a circuit diagram when two sensor elements 22 are arranged in the row direction and two in the column direction.

FIG. 8B shows an example of the positional relationship between the first conductive layer 111 (corresponding to the first electrode) included in the sensor element 22 and each wiring. In the first conductive layer 111, the gate of the transistor M1 and the second electrode of the transistor M3 are electrically connected to each other. The first conductive layer 111 is disposed so as to overlap with the plurality of pixels 33 illustrated in FIG.
8B, the transistors M1 to M3 are preferably provided in a region that does not overlap with the first conductive layer 111.

Further, as shown in FIGS. 9A to 9C, the sensor element 22 may not have the transistor M2. At this time, in the plurality of sensor elements 22 arranged in the row direction, the second electrode of each capacitor element C may be electrically connected to the scanning line G1 instead of the wiring CS.

The wiring VPO and the wiring BR illustrated in FIG. 7B have a function of supplying a high power supply potential that can make a transistor in a conductive state, for example. The signal line DL is connected to the detection signal DAT.
It has a function of supplying A. The terminal OUT has a function of supplying a signal converted based on the detection signal DATA.

The converter CONV includes a conversion circuit. Various circuits that can convert the detection signal DATA and supply it to the terminal OUT can be used for the converter CONV. For example, the converter C
A circuit that functions as a source follower circuit or a current mirror circuit by electrically connecting ONV to the sensor element 22 may be applied.

Specifically, a source follower circuit can be configured using the converter CONV including the transistor M4 (see FIG. 7B). Note that a transistor that can be manufactured in the same process as the transistors M1 to M3 may be used for the transistor M4.

For example, the structure of the transistor 251 or the transistor 252 illustrated in Embodiment 1 can be applied to each of the transistors M1 to M4.

Note that the configuration of the converter CONV is not limited to the configuration shown in FIG. FIG. 10 shows a different configuration example of the converter CONV.

The converter CONV illustrated in FIG. 10A includes a transistor M5 in addition to the transistor M4. Specifically, the transistor M5 has a gate electrically connected to the signal line DL, a first electrode electrically connected to the terminal OUT, and a second electrode electrically connected to the wiring GND. The wiring GND has a function of supplying a ground potential, for example. In addition, as shown in FIG.
The transistor M4 and the transistor M5 may each have a second gate. At this time, the second gate is preferably configured to be electrically connected to the gate.

Further, the converter CONV shown in FIG. 10C includes a transistor M5 and a resistor R. Specifically, the transistor M4 has a gate electrically connected to the wiring BR1. Transistor M
5, the gate is electrically connected to the wiring BR2, the first electrode is electrically connected to the terminal OUT and the second electrode of the resistor R, and the second electrode is electrically connected to the wiring GND. . The resistor R has the first electrode electrically connected to the wiring VDD. For example, the wiring BR1 and the wiring BR2 each have a function of supplying a high power supply potential that can turn on the transistor. The wiring VDD has a function of supplying a high power supply potential, for example.

[Example of driving method]
Next, a method for driving the sensor element 22 will be described with reference to FIG.

[First step]
In the first step, a reset signal for making the transistor M3 conductive and nonconductive is supplied to the gate of the transistor M3, and the potential of the first electrode of the capacitor C (that is, the potential of the node A) is predetermined. (See FIG. 7D-1 and the period T1).

Specifically, a reset signal is supplied to the wiring RES. The transistor M3 to which the reset signal is supplied sets the potential of the node A to a potential that can turn on the transistor M1, for example.

[Second step]
In the second step, a selection signal for turning on the transistor M2 is supplied to the gate of the transistor M2, and the second electrode of the transistor M1 is electrically connected to the signal line DL (FIG. 7D-1). (See period T2).

Specifically, a selection signal is supplied to the scanning line G1. Transistor M supplied with selection signal
2 electrically connects the second electrode of the transistor M1 to the signal line DL.

[Third step]
In the third step, a control signal is supplied to the second electrode of the capacitor C, and a potential that changes based on the control signal and the capacitance of the capacitor C is supplied to the gate of the transistor M1.

Specifically, a rectangular control signal is supplied to the wiring CS. When a rectangular control signal is supplied to the second electrode of the capacitor C, the potential of the node A changes based on the capacitance of the capacitor C (FIG. 7 (
D-1), see the second half of period T2).

For example, when the capacitive element C is placed in the atmosphere, if a capacitor having a dielectric constant higher than that of the atmosphere is disposed close to the second electrode of the capacitive element C, the capacitance of the capacitive element C is apparently large. Become.

As a result, the change in potential of the node A caused by the rectangular control signal is smaller than that in the case where those having a dielectric constant higher than that of the atmosphere are not arranged close to each other (see FIG. 7D-2, solid line). .

Alternatively, the capacitance of the capacitive element C also changes when the distance between the first electrode and the second electrode of the capacitive element C changes with the deformation of the touch panel. As a result, the potential of the node A changes.

[Fourth step]
In the fourth step, a signal caused by a change in the gate potential of the transistor M1 is supplied to the signal line DL.

For example, a change in current caused by a change in the potential of the gate of the transistor M1 is supplied to the signal line DL.

The converter CONV converts, for example, a change in current flowing through the signal line DL into a change in voltage and supplies it.

[Fifth step]
In the fifth step, a selection signal for turning off the transistor M2 is supplied to the gate of the transistor M2.

This completes the operation of the plurality of sensor elements 22 electrically connected to one scanning line G1.

When there are n scanning lines G1, the scanning lines G1 (1) to G1 (n)
Each of the first step to the fifth step may be repeated.

Alternatively, when the wiring RES and the wiring CS are common to the sensor elements 22, FIG.
A driving method as shown in FIG. That is, first, a reset signal is supplied to the wiring RES. Next, in a state where a control signal is supplied to the wiring CS, the scanning lines G1 (1) to G1
By sequentially supplying a selection signal to (n), a signal caused by a change in the potential of the node A is supplied to the signal lines DL (1) to DL (m).

By such a method, the frequency of supply of the reset signal and the supply of the control signal can be reduced.

  The above is the description of the driving method.

This embodiment can be implemented in appropriate combination with at least part of the other embodiments described in this specification.

(Embodiment 3)
In this embodiment, electronic devices and lighting devices that can be manufactured according to one embodiment of the present invention will be described with reference to FIGS.

The touch panel of one embodiment of the present invention has flexibility. Therefore, it can be suitably used for flexible electronic devices and lighting devices. In addition, by applying one embodiment of the present invention, an electronic device or a lighting device with high reliability and resistance to repeated bending can be manufactured.

Examples of the electronic device include a television device (also referred to as a television or a television receiver), a monitor for a computer, a digital camera, a digital video camera, a digital photo frame, a mobile phone (also referred to as a mobile phone or a mobile phone device). ), Portable game consoles,
A large-sized game machine such as a portable information terminal, a sound reproducing device, and a pachinko machine can be given.

In addition, since the touch panel of one embodiment of the present invention has flexibility, it can be incorporated along an inner wall or an outer wall of a house or a building, or a curved surface of an interior or exterior of an automobile.

The electronic device of one embodiment of the present invention may include a touch panel and a secondary battery.
At this time, it is preferable that the secondary battery can be charged using non-contact power transmission.

Secondary batteries include, for example, lithium ion secondary batteries such as lithium polymer batteries (lithium ion polymer batteries) using a gel electrolyte, lithium ion batteries, nickel metal hydride batteries, nickel-cadmium batteries, organic radical batteries, lead storage batteries, air batteries A secondary battery, a nickel zinc battery, a silver zinc battery, etc. are mentioned.

The electronic device of one embodiment of the present invention may include a touch panel and an antenna. By receiving a signal with an antenna, video, information, and the like can be displayed on the display unit. Further, when the electronic device has a secondary battery, the antenna may be used for non-contact power transmission.

FIG. 12A illustrates an example of a mobile phone. A mobile phone 7400 includes a housing 740.
1, an operation button 7403, and an external connection port 7404.
, A speaker 7405, a microphone 7406, and the like. Note that the mobile phone 7400
It is manufactured using the touch panel of one embodiment of the present invention for the display portion 7402. According to one embodiment of the present invention, a highly reliable mobile phone including a curved display portion and high yield can be provided.

A cellular phone 7400 illustrated in FIG. 12A can touch the display portion 7402 with a finger or the like,
Information can be entered. Any operation such as making a call or inputting a character can be performed by touching the display portion 7402 with a finger or the like.

In addition, by operating the operation button 7403, the power is turned on or off, or the display portion 7402 is operated.
The type of image displayed on the screen can be switched. For example, the mail creation screen can be switched to the main menu screen.

FIG. 12B illustrates an example of a wristwatch-type portable information terminal. Portable information terminal 7100
Includes a housing 7101, a display portion 7102, a band 7103, a buckle 7104, and an operation button 7.
105, an input / output terminal 7106, and the like.

The portable information terminal 7100 can execute various applications such as a mobile phone, electronic mail, text browsing and creation, music playback, Internet communication, and computer games.

The display portion 7102 is provided with a curved display surface, and display can be performed along the curved display surface. The display portion 7102 includes a touch sensor and can be operated by touching the screen with a finger, a stylus, or the like. For example, the icon 7 displayed on the display unit 7102
By touching 107, the application can be activated.

In addition to time setting, the operation button 7105 can have various functions such as power on / off operation, wireless communication on / off operation, manner mode execution / release, and power saving mode execution / release. . For example, the function of the operation button 7105 can be freely set by an operation system incorporated in the portable information terminal 7100.

In addition, the portable information terminal 7100 can perform short-range wireless communication with a communication standard. For example, it is possible to talk hands-free by communicating with a headset capable of wireless communication.

In addition, the portable information terminal 7100 includes an input / output terminal 7106, and can directly exchange data with other information terminals via a connector. Charging can also be performed through the input / output terminal 7106. Note that the charging operation may be performed by wireless power feeding without using the input / output terminal 7106.

A touch panel of one embodiment of the present invention is incorporated in the display portion 7102 of the portable information terminal 7100. According to one embodiment of the present invention, a highly reliable portable information terminal including a curved display portion and having high yield can be provided.

12C to 12E illustrate an example of a lighting device. The lighting device 7200, the lighting device 7210, and the lighting device 7220 are each provided with a base 72 including an operation switch 7203.
01 and a light emitting portion supported by the base portion 7201.

A lighting device 7200 illustrated in FIG. 12C includes a light-emitting portion 7202 having a wavy light-emitting surface. Therefore, the lighting device has high design.

A light emitting portion 7212 included in the lighting device 7210 illustrated in FIG. 12D has a structure in which two light emitting portions curved in a convex shape are arranged symmetrically. Accordingly, all directions can be illuminated with the lighting device 7210 as the center.

A lighting device 7220 illustrated in FIG. 12E includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, since the light emitted from the light emitting unit 7222 is condensed on the front surface of the lighting device 7220, it is suitable for brightly illuminating a specific range.

In addition, since each light emitting unit included in the lighting device 7200, the lighting device 7210, and the lighting device 7220 has flexibility, the light emitting unit is fixed with a member such as a plastic member or a movable frame, and is adapted to the use. It is good also as a structure which can bend the light emission surface of a light emission part freely.

Note that although the lighting device in which the light emitting unit is supported by the base is illustrated here, a housing including the light emitting unit can be fixed to the ceiling or can be used to hang from the ceiling. Since the light emitting surface can be curved and used, the light emitting surface can be curved concavely to illuminate a specific area, or the light emitting surface can be curved convexly to illuminate the entire room.

Here, the touch panel of one embodiment of the present invention is incorporated in each light-emitting portion. According to one embodiment of the present invention, a highly reliable lighting device including a curved light-emitting portion can be provided with high yield.

FIG. 12F illustrates an example of a portable touch panel. Touch panel 7300
Includes a housing 7301, a display portion 7302, operation buttons 7303, a drawer member 7304, and a control portion 7305.

The touch panel 7300 includes a flexible display portion 7102 wound in a roll shape within a cylindrical housing 7301.

The touch panel 7300 can receive a video signal with the control unit 7305 and can display the received video on the display unit 7302. In addition, the control unit 7305 is provided with a battery. Further, the control unit 7305 may be provided with a terminal unit for connecting a connector, and a video signal and power may be directly supplied from the outside by wire.

An operation button 7303 can be used to perform power ON / OFF operations, switching of displayed images, and the like.

FIG. 12G illustrates the touch panel 7300 in a state where the display portion 7302 is pulled out by a pull-out member 7304. In this state, an image can be displayed on the display portion 7302.
An operation button 7303 arranged on the surface of the housing 7301 can be easily operated with one hand. Further, as shown in FIG. 12F, the operation button 7303 is arranged close to one side instead of the center of the housing 7301, so that it can be easily operated with one hand.

Note that a reinforcing frame may be provided on a side portion of the display portion 7302 so that the display surface of the display portion 7302 is fixed to be flat when the display portion 7302 is pulled out.

In addition to this configuration, a speaker may be provided in the housing, and audio may be output by an audio signal received together with the video signal.

The touch panel of one embodiment of the present invention is incorporated in the display portion 7302. According to one embodiment of the present invention, a lightweight and highly reliable touch panel can be provided with high yield.

13A to 13C show a foldable portable information terminal 310. FIG. FIG.
Fig. 2 shows the portable information terminal 310 in a developed state. FIG. 13B illustrates the portable information terminal 310 in a state in which the state is changing from one of the expanded state or the folded state to the other. FIG.
) Shows the portable information terminal 310 in a folded state. The portable information terminal 310 is excellent in portability in the folded state, and in the expanded state, the portable information terminal 310 is excellent in display listability due to a seamless wide display area.

The display panel 316 is supported by three housings 315 connected by a hinge 313. By bending between the two housings 315 via the hinge 313, the portable information terminal 3
10 can be reversibly deformed from a developed state to a folded state. The touch panel of one embodiment of the present invention can be used for the display panel 316. For example, curvature radius 1m
A touch panel that can be bent at m to 150 mm can be applied.

Note that one embodiment of the present invention may include a sensor that detects that the touch panel is folded or unfolded and supplies detection information. The control device of the touch panel may acquire information indicating that the touch panel is in a folded state, and stop the operation of the folded portion (or the portion that is folded and cannot be visually recognized by the user). Specifically, the display may be stopped. Moreover, you may stop the detection by a touch sensor.

Similarly, the control device of the touch panel may acquire information indicating that the touch panel is in a developed state, and restart detection by the display or the touch sensor.

13D and 13E illustrate a foldable portable information terminal 320. FIG. FIG. 13D illustrates the portable information terminal 320 in a state where the display portion 322 is folded so as to be on the outside. FIG.
FIG. 5E shows the portable information terminal 320 in a state where the display unit 322 is folded so as to be inside. When the portable information terminal 320 is not used, the non-display portion 325 is folded outward,
It is possible to suppress the display portion 322 from being dirty or damaged. The touch panel of one embodiment of the present invention is provided with the display portion 32.
2 can be used.

FIG. 13F is a perspective view illustrating the outer shape of the portable information terminal 330. FIG.
3 is a top view of a portable information terminal 330. FIG. FIG. 13H is a perspective view illustrating the outer shape of portable information terminal 340.

The portable information terminals 330 and 340 have one or a plurality of functions selected from, for example, a telephone, a notebook, an information browsing device, or the like. Specifically, each can be used as a smartphone.

The portable information terminals 330 and 340 can display characters and image information on the plurality of surfaces. For example, three operation buttons 339 can be displayed on one surface (FIG. 13F) (
H)). Further, information 337 indicated by a broken-line rectangle can be displayed on another surface (FIG. 13 (
G) (H)). Examples of the information 337 include an SNS (social networking service) notification, an e-mail or a notification indicating an incoming call such as a telephone, a title such as an e-mail, a sender name such as an e-mail, date / time, time, battery Remaining power, antenna reception strength, etc. Alternatively, an operation button 339, an icon, or the like may be displayed instead of the information 337 at a position where the information 337 is displayed. Note that FIGS. 13F and 13G illustrate examples in which the information 337 is displayed on the upper side; however, one embodiment of the present invention is not limited thereto. For example,
Like the portable information terminal 340 shown in FIG. 13H, it may be displayed on the side.

For example, the user of the portable information terminal 330 can check the display (information 337 here) in a state where the portable information terminal 330 is stored in a chest pocket of clothes.

Specifically, the telephone number or name of the caller of the incoming call is displayed at a position where it can be observed from above the portable information terminal 330. The user can check the display and determine whether to receive a call without taking out the portable information terminal 330 from the pocket.

The touch panel of one embodiment of the present invention can be used for the display portion 333 included in each of the housing 335 of the portable information terminal 330 and the housing 336 of the portable information terminal 340. According to one embodiment of the present invention, a highly reliable touch panel including a curved display portion can be provided with high yield.

Further, information may be displayed on three or more surfaces as in the portable information terminal 345 illustrated in FIG. Here, an example is shown in which information 355, information 356, and information 357 are displayed on different planes.

The touch panel of one embodiment of the present invention can be used for the display portion 358 included in the housing 354 of the portable information terminal 345. According to one embodiment of the present invention, a highly reliable touch panel including a curved display portion can be provided with high yield.

10 Touch Panel Module 20 Touch Sensor Module 21 Substrate 22 Sensor Element 23 Circuit 24 Circuit 25 Wiring 26 Wiring 30 Display Panel 31 Substrate 32 Display Unit 33 Pixel 34 Circuit 41 FPC
42 FPC
43 terminal 110 capacitor element 111 conductive layer 111a conductive layer 112 insulating layer 113 conductive layer 114 colored layer 114b colored layer 114g colored layer 114r colored layer 115 light shielding layer 116 conductive layer 116a conductive layer 116b conductive layer 116c conductive layer 116d conductive layer 116e conductive layer 116f conductive layer 116g conductive layer 117 conductive layer 117a conductive layer 117b conductive layer 119 optical adjustment layer 131 gate electrode 132 semiconductor layer 133a electrode 133b electrode 201 transistor 202 transistor 203 transistor 204 light emitting element 205 contact portion 210 connection layer 211 adhesive layer 212 insulating layer 213 Insulating layer 214 Insulating layer 215 Insulating layer 216 Insulating layer 217 Insulating layer 218 Insulating layer 219 Spacer 220 Adhesive layer 221 Electrode 222 EL layer 223 Electrode 224 Optical adjustment layer 225 Layer 251 Transistor 252 Transistor 253 Contact portion 260 Connection layer 261 Adhesive layer 262 Insulating layer 263 Insulating layer 265 Insulating layer 266 Insulating layer 267 Insulating layer 268 Insulating layer 310 Portable information terminal 313 Hinge 315 Housing 316 Display panel 320 Portable information Terminal 322 Display unit 325 Non-display unit 330 Mobile information terminal 333 Display unit 335 Case 336 Case 337 Information 339 Operation button 340 Mobile information terminal 345 Mobile information terminal 354 Case 355 Information 356 Information 357 Information 358 Display unit 7100 Mobile information terminal 7101 Housing 7102 Display unit 7103 Band 7104 Buckle 7105 Operation button 7106 Input / output terminal 7107 Icon 7200 Illuminating device 7201 Base unit 7202 Light emitting unit 7203 Operation switch 7210 Illuminating device 212 light emitting section 7220 illuminating device 7222 emitting portion 7300 touch panel 7301 housing 7302 display unit 7303 operation button 7304 member 7305 controller 7400 mobile phone 7401 housing 7402 display unit 7403 operation button 7404 an external connection port 7405 speaker 7406 microphone

Claims (2)

A flexible first substrate, a flexible second substrate, a display element, a light-shielding layer, a first conductive layer, a second conductive layer, A touch panel having three conductive layers and an insulating layer,
The first base material and the second base material have regions that overlap each other,
Between the first base material and the second base material, the display element, the light-shielding layer, the first conductive layer, the second conductive layer, and the third base material A conductive layer, and the insulating layer,
The first conductive layer is located closer to the first base than the insulating layer,
The second conductive layer is located closer to the second base than the insulating layer,
The first conductive layer has a region overlapping the second conductive layer through the insulating layer,
The first conductive layer, the second conductive layer, and the insulating layer are located closer to the first substrate than the light-shielding layer,
The third conductive layer is located closer to the second substrate than the light-shielding layer,
The touch panel, wherein the third conductive layer and the first conductive layer or the second conductive layer are electrically connected. In claim 1,
Having a transistor,
The touch panel, wherein the third conductive layer is electrically connected to a gate, a source, or a drain of the transistor.

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