JP2003174153A - Peeling method, semiconductor device, and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To peel not only a peeled layer with small area, but also a peeled layer with large area over the entire surface in good yield by providing a peeling method which gives no damage to the peeled layers, to provide a semiconductor device which is made lightweight by sticking the peeled layers on various base material, and its manufacturing method, and to provide a semiconductor device which is made lightweight by sticking various elements (a thin-film diode, and a photoelectric converting element and silicon resistance element composed of PIN junctions of silicon) represented by a TFT, specially, on flexible film, and its manufacturing method. <P>SOLUTION: A metal layer or nitride layer 11 is provided on a substrate, an oxide layer 12 is provided in contact with the metal layer or nitride layer 11. Even after lamination film formation or a heat treatment of ≥500°C is carried out, fine separation in the oxide layer 12 or on its interface can easily be carried out by a physical means. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a peeling method for a peeled layer, and more particularly to a peeling method for a peeled layer including various elements. In addition, the present invention relates to a semiconductor device having a circuit including a thin film transistor (hereinafter referred to as a TFT) in which a peeled layer to be peeled is attached to a substrate and transferred, and a manufacturing method thereof. For example, an electro-optical device represented by a liquid crystal module or a light emitting device represented by an EL module,
And an electronic device in which such a device is mounted as a component.

[0002] In this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and electro-optical devices, light-emitting devices, semiconductor circuits, and electronic devices are all semiconductor devices.

[0003]

2. Description of the Related Art In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of several to several hundreds nm) formed on a substrate having an insulating surface has been receiving attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and their development is urgently needed especially as a switching element for image display devices.

Various applications using such an image display device are expected, but attention is particularly focused on their use in portable devices. At present, glass substrates and quartz substrates are often used, but they have the drawback of being fragile and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, it has been attempted to form a TFT element on a flexible substrate, typically a flexible plastic film.

However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, it is not possible to form a TFT having electric characteristics as good as when formed on a glass substrate. . Therefore, high-performance liquid crystal display devices and light-emitting elements using plastic films have not been realized.

Further, a peeling method for peeling a layer to be peeled existing on a substrate via a separation layer from the substrate has been already proposed. For example, in the techniques disclosed in Japanese Patent Laid-Open Nos. 10-125929 and 10-125931, a separation layer made of amorphous silicon (or polysilicon) is provided, and laser light is irradiated through a substrate. The hydrogen contained in the amorphous silicon is released to generate voids and separate the substrate. In addition, JP-A-10-125930 discloses that a layer to be peeled (referred to as a layer to be transferred in the gazette) is attached to a plastic film to complete a liquid crystal display device using this technique.

However, in the above method, it is essential to use a substrate having a high light-transmitting property.
Further, since energy sufficient to release hydrogen contained in the amorphous silicon is applied, relatively large laser light irradiation is required, which causes a problem that the layer to be peeled is damaged. Further, in the above method, when an element is manufactured on the separation layer, if high-temperature heat treatment or the like is performed in the element manufacturing process, hydrogen contained in the separation layer is diffused and reduced, and the separation layer is irradiated with laser light. However, peeling may not be performed sufficiently. Therefore, since the amount of hydrogen contained in the separation layer is maintained, there is a problem that the process after formation of the separation layer is limited. Further, the above-mentioned publication describes that a light-shielding layer or a reflective layer is provided in order to prevent damage to the layer to be peeled, but in that case, it is difficult to manufacture a transmissive liquid crystal display device. In addition, according to the above method, it is difficult to peel off the peeled layer having a large area.

[0008]

The present invention has been made in view of the above problems, and the present invention provides a peeling method that does not damage the peeled layer, and the peeled layer having a small area. It is an object of the present invention not only to peel off, but also to peel a layer to be peeled having a large area over the entire surface.

Another object of the present invention is to provide a peeling method which is not limited by the heat treatment temperature, the type of substrate, etc. in forming the layer to be peeled.

It is another object of the present invention to provide a light-weight semiconductor device in which a layer to be peeled is attached to various base materials and a manufacturing method thereof. In particular, to provide a light-weight semiconductor device and a method for manufacturing the semiconductor device, in which various elements typified by TFT (a thin film diode, a photoelectric conversion element including a silicon PIN junction, and a silicon resistance element) are attached to a flexible film. Is an issue.

[0011]

Means for Solving the Problems The inventors of the present invention have conducted a number of experiments and studies, and have provided a nitride layer, preferably a metal nitride layer, provided on a substrate and contacted with the metal nitride layer. To form an oxide layer, and further form a film on the oxide layer or 500
After heat treatment at ℃ or higher, no abnormalities in the process such as film peeling (peeling) will occur, but physical means, typically mechanical force, must be applied (for example, peeling by human hands). We have found a peeling method that can be easily separated in the oxide layer or at the interface.

That is, the bonding force between the nitride layer and the oxide layer is
While having sufficient strength to withstand thermal energy, the film stresses of the nitride layer and oxide layer are different from each other, and there is stress strain between the nitride layer and oxide layer. It is weak against mechanical energy and is most suitable for peeling. The inventors of the present invention call the peeling process of peeling by utilizing the film stress in this way a stress peel-off process.

In the present specification, the internal stress of a film (referred to as film stress) means that when one considers an arbitrary cross section inside a film formed on a substrate, one side of the cross section is the other side. It is the force exerted on the unit cross-sectional area. It can be said that internal stress is more or less always present in a thin film formed by vacuum vapor deposition, sputtering, vapor phase growth or the like. Its value reaches a maximum of 10 ⁹ N / m ² . The internal stress value changes depending on the material of the thin film, the substance of the substrate, the forming conditions of the thin film, and the like. In addition, the internal stress value also changes due to the heat treatment.

The state in which the force exerted on the other party through the unit cross-sectional area perpendicular to the substrate surface is in the tensile direction is called the tensile state, the internal stress at that time is the tensile stress, and the state in the pushing direction is the compressed state. The internal stress at that time is called compressive stress. In this specification, the tensile stress is positive (+) and the compressive stress is negative (-) when shown in graphs and tables.

Structure 1 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling a layer to be peeled from a substrate, wherein a nitride layer is provided on the substrate, and the nitride layer is After forming a layer to be peeled composed of a laminate including at least an oxide layer in contact with the nitride layer on the substrate provided, the layer to be peeled is oxidized from the substrate provided with the nitride layer by a physical means. The peeling method is characterized in that the peeling is performed in the layer of the object layer or at the interface.

Further, the support may be peeled after being adhered with an adhesive, and the constitution 2 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling the layer to be peeled from the substrate. A nitride layer is provided on a substrate, and a layer to be peeled is formed on the substrate on which the nitride layer is provided and which includes a layer including an oxide layer in contact with at least the nitride layer,
After adhering a support to the layer to be peeled, peeling the layer to be peeled adhered to the support from the substrate provided with the nitride layer at a physical means in or at the interface of the oxide layer. Is a peeling method.

Further, in the above-mentioned constitution 2, in order to further promote peeling, heat treatment or laser light irradiation may be performed before the support is bonded. In this case, a material that absorbs laser light may be selected for the nitride layer and the interface between the nitride layer and the oxide layer may be heated to facilitate peeling. However, when using laser light, a light-transmitting substrate is used.

In each of the above structures, the nitride layer is
Although another layer such as an insulating layer or a metal layer may be provided between the substrate and the nitride layer, it is preferable to form the nitride layer on the substrate in order to simplify the process.

Further, instead of the nitride layer, a metal layer, preferably a metal nitride layer may be used. A metal layer, preferably a metal nitride layer, provided on the substrate is provided, and an oxide layer is further provided in contact with the metal nitride layer. Even if it is provided and further subjected to a film forming treatment or a heat treatment at 500 ° C. or higher, peeling (peeling) of the film does not occur, and the oxide layer can be easily separated cleanly in the layer or at the interface by physical means.

Structure 3 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling a layer to be peeled from a substrate, wherein a metal layer is provided on the substrate, and the metal layer is provided. After forming a layer to be peeled consisting of a laminate including at least an oxide layer in contact with the metal layer on the substrate, the layer to be peeled is a layer of the oxide layer from a substrate provided with the metal layer by a physical means. The peeling method is characterized by peeling inside or at the interface.

Further, the support may be peeled after being adhered with an adhesive, and the constitution 4 of the invention relating to the peeling method disclosed in the present specification is a peeling method for peeling the layer to be peeled from the substrate. A metal layer is provided on a substrate, and a layer to be peeled is formed on the substrate provided with the metal layer, the layer to be peeled including an oxide layer in contact with at least the metal layer, and a support is provided on the layer to be peeled. After the bonding, the peeling layer bonded to the support is peeled from the substrate provided with the metal layer at a layer inside or at the interface of the oxide layer by physical means.

Also in the above-mentioned constitution 4, in order to further promote peeling, heat treatment or laser light irradiation may be performed before the support is bonded. In this case, a material that absorbs laser light may be selected for the metal layer and the interface between the metal layer and the oxide layer may be heated to facilitate peeling. However, when using laser light, a light-transmitting substrate is used.

In the present specification, the physical means is a means recognized not by chemistry but by physics, and specifically, mechanical means or mechanical means having a process capable of being reduced to the law of mechanics. It means a means and means to change some mechanical energy (mechanical energy).

However, in both of the above constitutions 2 and 4, when peeling by physical means, the bonding force between the oxide layer and the metal layer should be smaller than the bonding force with the support. is necessary.

Further, in the above Structure 3 or Structure 4, the metal layer is made of Ti, Al, Ta, W, Mo or C.
u, Cr, Nd, Fe, Ni, Co, Zr, Zn, R
an element selected from u, Rh, Pd, Os, Ir and Pt,
Alternatively, it is a single layer formed of an alloy material or a compound material containing the above element as a main component, or a stacked layer of a metal or a mixture thereof.

In Structure 3 or Structure 4, the metal layer may be provided with another layer such as an insulating layer between the substrate and the metal layer. However, in order to simplify the process, the substrate is It is preferable to form a metal layer in contact therewith.

In the present invention, the substrate is not limited to the translucent substrate, but any substrate such as a glass substrate,
A quartz substrate, a semiconductor substrate, a ceramics substrate, or a metal substrate can be used, and a layer to be peeled provided over the substrate can be peeled off.

Further, in each of the above structures, the oxide layer is a single layer made of a silicon oxide material or a metal oxide material, or a laminated layer of these.

Further, in each of the above-mentioned constitutions, in order to further promote peeling, before peeling by the physical means,
Heat treatment or laser light irradiation treatment may be performed.

Further, a semiconductor device can be manufactured by sticking (transferring) a layer to be peeled provided on a substrate to a transfer body by using the peeling method of the present invention. The configuration of the invention related to the method, a step of forming a nitride layer on the substrate, a step of forming an oxide layer on the nitride layer, a step of forming an insulating layer on the oxide layer,
A step of forming an element on the insulating layer, a step of adhering a support to the element, and then peeling the support from the substrate at a layer or interface of the oxide layer by a physical means, and the insulating layer Alternatively, a transfer member is adhered to the oxide layer,
And a step of sandwiching the element between the support and the transfer body, which is a method for manufacturing a semiconductor device.

In the above structure, in order to further promote peeling, heat treatment or laser light irradiation may be performed before the support is bonded. In this case, a material that absorbs laser light may be selected for the nitride layer and the interface between the nitride and the oxide layer may be heated to facilitate peeling. However, when using laser light, a light-transmitting substrate is used.

Further, in order to promote peeling, a granular oxide may be provided on the nitride layer and an oxide layer covering the granular oxide may be provided to facilitate peeling. This relates to a method for manufacturing a semiconductor device. The structure of the invention comprises a step of forming a nitride layer on a substrate, a step of forming a granular oxide on the nitride layer, a step of forming an oxide layer covering the oxide, and the oxide. A step of forming an insulating layer on the layer, a step of forming an element on the insulating layer, and a step of adhering a support to the element and then applying the support from the substrate to the inside of the oxide layer by physical means. Or a step of peeling at the interface,
A step of adhering a transfer body to the insulating layer or the oxide layer, and sandwiching the element between the support body and the transfer body.

Another aspect of the invention relating to a method for manufacturing a semiconductor device is that a step of forming a layer containing a metal material on a substrate, and a step of forming an oxide layer on the layer containing the metal material. A step of forming an insulating layer on the oxide layer, a step of forming an element on the insulating layer, and a step of adhering a support to the element and then removing the support from the substrate by physical means. Characterized by comprising a step of peeling in a layer or at an interface, a step of adhering a transfer body to the insulating layer or the oxide layer, and sandwiching the element between the support and the transfer body. And a method for manufacturing a semiconductor device.

Further, in the above structure, in order to further promote peeling, heat treatment or laser light irradiation may be performed before the support is bonded. In this case, a material that absorbs laser light may be selected for the metal layer and the interface between the metal layer and the oxide layer may be heated to facilitate peeling. However, when using laser light, a light-transmitting substrate is used.

Further, in order to promote peeling, a granular oxide may be provided on a layer containing a metal material, and an oxide layer covering the granular oxide may be provided to facilitate peeling. The structure of the invention relating to the manufacturing method includes a step of forming a layer containing a metal material on a substrate, a step of forming a granular oxide on the layer containing the metal material, and an oxide layer covering the oxide. A step of forming an insulating layer on the oxide layer, a step of forming an element on the insulating layer, and a step of adhering a support to the element and then physically removing the support from the substrate. A step of peeling the oxide layer in or at the interface by means, and a step of adhering a transfer body to the insulating layer or the oxide layer and sandwiching the element between the support and the transfer body. Semiconductor device characterized by having It is a manufacturing method.

In the above structure, the layer containing the metal material is preferably nitride, and the metal material is Ti, Al, Ta, W, Mo, Cu, Cr, Nd,
Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, O
a single layer made of an element selected from s, Ir and Pt, or an alloy material or a compound material containing the above element as a main component,
Alternatively, it is characterized by being a laminated layer of these metals or mixtures thereof.

A semiconductor device may be manufactured by peeling a layer to be peeled provided on a substrate by using the above-described peeling method of the present invention and then attaching the peeled layer to a first transfer body or a second transfer body. It is possible that the structure of the invention relating to the method for manufacturing a semiconductor device includes a step of forming a layer containing a metal material on a substrate,
A step of forming an oxide layer on the layer containing the metal material, a step of forming an insulating layer on the oxide layer, a step of forming an element on the insulating layer, and a physical means from the substrate. Peeling in the oxide layer or at the interface; adhering a first transfer member to the insulating layer or oxide layer; adhering a second transfer member to the element; A method of manufacturing a semiconductor device, comprising: sandwiching the element between a transfer body and the second transfer body.

In the above structure, the layer containing the metal material is preferably a nitride, and the metal material is Ti, Al, Ta, W, Mo, Cu, Cr, Nd,
Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, O
a single layer made of an element selected from s, Ir and Pt, or an alloy material or a compound material containing the above element as a main component,
Alternatively, it is characterized by being a laminated layer of these metals or mixtures thereof.

Further, the structure of the invention relating to another method for manufacturing a semiconductor device has a step of forming a nitride layer on a substrate, a step of forming an oxide layer on the nitride layer, and a step of forming an oxide layer on the oxide layer. A step of forming an insulating layer on the insulating layer, a step of forming an element on the insulating layer, a step of peeling from the substrate in a layer of the oxide layer or at an interface by a physical means, to the insulating layer or the oxide layer. A step of adhering a first transfer body, and a step of adhering a second transfer body to the element and sandwiching the element between the first transfer body and the second transfer body. And a method for manufacturing a semiconductor device.

Further, in each of the above structures relating to the method for manufacturing a semiconductor device, the oxide layer is a single layer made of a silicon oxide material or a metal oxide material, or a stacked layer thereof.

In addition, in each of the above-described structures relating to the method for manufacturing a semiconductor device, in order to further promote peeling, heat treatment or laser light irradiation treatment may be performed before peeling by the physical means.

Further, in each of the above structures relating to the method for manufacturing a semiconductor device, the element is a thin film transistor having a semiconductor layer as an active layer, and the step of forming the semiconductor layer includes forming a semiconductor layer having an amorphous structure. It is characterized in that a semiconductor layer having a crystal structure is obtained by being crystallized by heat treatment or laser light irradiation treatment.

In the present specification, a transfer member means
After being peeled off, it is to be adhered to the layer to be peeled off and is not particularly limited, and may be a base material of any composition such as plastic, glass, metal, ceramics and the like. Further, in the present specification, the support is for adhering to the layer to be peeled when peeling by a physical means, and is not particularly limited, and may have any composition such as plastic, glass, metal, and ceramics. It may be a substrate. The shape of the transfer body and the shape of the support are not particularly limited, and may be those having a flat surface, those having a curved surface, those having bendability, and those having a film shape. Further, if weight reduction is the top priority, film-like plastic substrates such as polyethylene terephthalate (PET), polyether sulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyether ether. Ketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PA
Plastic substrates such as R), polybutylene terephthalate (PBT), and polyimide are preferable.

In each of the above-described structures relating to the method for manufacturing a semiconductor device, when manufacturing a liquid crystal display device, a support is used as a counter substrate and a sealant is used as an adhesive to bond the support to a layer to be peeled. . In this case, the element provided in the peeling layer has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate.

In each of the above-described structures relating to the method for manufacturing a semiconductor device, when manufacturing a light-emitting device represented by a light-emitting device having an EL element, a support is used as a sealing material and an organic material such as moisture or oxygen is externally applied. It is preferable to completely block the light emitting device from the outside so as to prevent a substance that promotes deterioration of the compound layer from entering. Further, if the weight saving is the highest priority, a film-like plastic substrate is preferable, but since the effect of preventing a substance such as moisture or oxygen that promotes deterioration of the organic compound layer from entering from the outside is weak, If the first insulating film, the second insulating film, and the third insulating film are provided thereover, it is possible to sufficiently prevent entry of substances such as moisture and oxygen from the outside that promote deterioration of the organic compound layer. Good. However, the second insulating film (stress relaxation film) sandwiched between the first insulating film (barrier film) and the third insulating film (barrier film) is the first insulating film and the The film stress is set to be smaller than that of the third insulating film.

When a light-emitting device represented by a light-emitting device having an EL element is manufactured, not only the support but also the transfer member similarly has the first insulating film, the second insulating film, and the third insulating film.
It is preferable to provide an insulating film to prevent the entry of substances, such as moisture and oxygen, from the outside, which promote deterioration of the organic compound layer.

(Experiment 1) Here, in order to confirm whether an oxide layer is provided in contact with a nitride layer or a metal layer and a layer to be peeled provided on the oxide layer can be peeled from a substrate, the following experiment is performed. I went.

First, a layered structure as shown in FIG. 3A is formed on the substrate.

As the substrate 30, a glass substrate (# 173
7) was used. Further, the aluminum-silicon alloy layer 31 having a film thickness of 300 nm was formed on the substrate 30 by the sputtering method. Then, a titanium nitride layer 32 of 100 n is formed on the aluminum-silicon alloy layer 31 by a sputtering method.
The film was formed with a film thickness of m.

Then, a silicon oxide layer 33 was formed to a thickness of 200 nm by the sputtering method. Silicon oxide layer 3
The film forming conditions of No. 3 are as follows: RF sputtering apparatus, silicon oxide target (diameter 30.5 cm), substrate temperature 150 ° C., film forming pressure 0.4 Pa, film forming power 3 kW,
Argon flow rate / oxygen flow rate = 35 sccm / 15 sccm.

Next, a base insulating layer is formed on the silicon oxide layer 33 by the plasma CVD method. As the base insulating layer, a silicon oxynitride film 34a (composition ratio Si = 32%, O = 27%, N) formed by a plasma CVD method at a film forming temperature of 300 ° C. and source gases SiH ₄ , NH ₃ , and N ₂ O is used. = 2
4%, H = 17%) with a thickness of 50 nm. Next, after cleaning the surface with ozone water, the oxide film on the surface was diluted with dilute hydrofluoric acid (1 /
100 dilution). Then, a silicon oxynitride film 34b (composition ratio Si = 32%, O) formed by plasma CVD at a film forming temperature of 300 ° C. and source gases SiH ₄ and N ₂ O.
= 59%, N = 7%, H = 2%) to a thickness of 100 nm, and the amorphous structure is formed by a plasma CVD method at a film forming temperature of 300 ° C. and a film forming gas of SiH ₄ without exposing to the atmosphere. A semiconductor layer (here, the amorphous silicon layer 35) having
It was formed with a thickness of nm. (Fig. 3 (A)

Then, a nickel acetate salt solution containing 10 ppm by weight of nickel is applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used. Then, heat treatment is performed to crystallize the semiconductor film having a crystal structure (here, the polysilicon layer 3
6) is formed. (FIG. 3B) Here, after heat treatment for dehydrogenation (500 ° C., 1 hour), heat treatment for crystallization (550 ° C., 4 hours) is performed to obtain a silicon film having a crystal structure. . Although a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Next, a film substrate 38 (here, polyethylene terephthalate (PET)) was attached to the polysilicon layer 36 by using an epoxy resin as the adhesive layer 37. (Fig. 3 (C))

After obtaining the state shown in FIG. 3C, the film substrate 38 and the substrate 30 were pulled by a human hand so as to be separated from each other. It was confirmed that at least the titanium nitride and the aluminum-silicon alloy layer remained on the peeled substrate 30. This experiment shows that silicon oxide 33
It is expected to be peeled off in the layer or at the interface.

As described above, the oxide layer is provided in contact with the nitride layer or the metal layer, and the peeled layer provided on the oxide layer is peeled off, whereby the peeled layer is peeled from the substrate 30 over the entire surface. can do.

(Experiment 2) In order to specify where the peeling is performed, the peeling method according to the present invention was used for partial peeling, and an experiment for examining a cross section near the boundary was conducted.

As the substrate, a glass substrate (# 1737)
Was used. Further, a titanium nitride layer having a thickness of 100 nm was formed over the substrate by a sputtering method.

Then, a silicon oxide layer was formed to a thickness of 200 nm by the sputtering method. The film formation conditions for the silicon oxide layer are as follows: RF sputtering apparatus, silicon oxide target (diameter 30.5 cm), substrate temperature 15
The temperature was 0 ° C., the film formation pressure was 0.4 Pa, the film formation power was 3 kW, and the argon flow rate / oxygen flow rate was 35 sccm / 15 sccm.

Next, plasma CV is formed on the silicon oxide layer.
A base insulating layer is formed by the D method. The base insulating layer is formed by plasma CVD at a film forming temperature of 300 ° C. and a source gas S
Silicon oxynitride film made of iH ₄ , NH ₃ , and N ₂ O (composition ratio Si = 32%, O = 27%, N = 24%, H
= 17%) was formed to 50 nm. Next, after cleaning the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (diluted by 1/100). Then, the film formation temperature is set to 3 by plasma CVD method.
Silicon oxynitride film (composition ratio Si = 32%, O = 59%, N =) produced from source gas SiH ₄ and N ₂ O at 00 ° C.
(7%, H = 2%) to have a thickness of 100 nm, and the film formation temperature is 300 by plasma CVD without exposing to the atmosphere.
A semiconductor layer having an amorphous structure (here, an amorphous silicon layer) was formed with a film thickness of SiH ₄ at a temperature of 54 ° C. to a thickness of 54 nm.

Then, a nickel acetate salt solution containing 10 ppm by weight of nickel is applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used. Then, heat treatment is performed to crystallize the semiconductor film having a crystal structure (here, a polysilicon layer).
To form. Here, heat treatment for dehydrogenation (500
After heat treatment (550 ° C., 1 hour) for crystallization,
4 hours) to obtain a silicon film having a crystal structure.

Next, an adhesive tape was attached to a part of the polysilicon layer and pulled by a human hand so that the adhesive tape and the substrate were separated. Then, only the place where the adhesive tape was attached was peeled off and transferred to the tape. A TEM photograph at the separation boundary on the substrate side is shown in FIG. 20 (A), and a schematic diagram thereof is shown in FIG. 20 (B).

As shown in FIG. 20, the titanium nitride layer is
The entire surface remains on the glass substrate, and the part transferred by applying the tape is transferred cleanly and stacked (S by the sputtering method).
The iO ₂ film, the insulating films (1) and (2) by the PCVD method, and the polysilicon film) are lost. From these, it can be seen that peeling occurs at the interface between the titanium nitride layer and the SiO ₂ film formed by the sputtering method.

(Experiment 3) Here, when the material of the nitride layer or the metal layer is TiN, W, or WN, an oxide layer (silicon oxide: film thickness 200 n is formed in contact with the nitride layer or the metal layer).
The following experiment was conducted to confirm whether the layer to be peeled provided on the oxide layer can be peeled from the substrate.

As Sample 1, after TiN was formed to a film thickness of 100 nm on a glass substrate by sputtering,
A 200 nm thick silicon oxide film was formed by sputtering. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As sample 2, a W film having a film thickness of 50 nm was formed on a glass substrate by using a sputtering method, and then a silicon oxide film having a film thickness of 200 nm was formed by using the sputtering method. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

As sample 3, a WN film having a film thickness of 50 nm was formed on a glass substrate by sputtering, and then a silicon oxide film having a film thickness of 200 nm was formed by sputtering. After the formation of the silicon oxide film, stacking and crystallization were performed as in Experiment 1.

Samples 1 to 3 were formed in this manner, and an experiment was conducted as to whether or not the adhesive tape was adhered to the layer to be peeled off. The results are shown in Table 1.

[0068]

[Table 1]

The internal stress before and after the heat treatment (550 ° C., 4 hours) was measured for each of the silicon oxide film, the TiN film, and the W film. The results are shown in Table 2.

[0070]

[Table 2]

As the silicon oxide film, a film having a thickness of 400 nm formed on a silicon substrate by a sputtering method was measured, and for the TiN film and the W film, a film having a thickness of 400 nm formed on the glass substrate by the sputtering method. After forming a thick film, the internal stress was measured, and thereafter, a silicon oxide film was laminated as a cap film, heat treatment was performed, and then the cap film was removed by etching, and the internal stress was measured again. In addition, two samples were prepared and measured.

The W film has a compressive stress (about −7 × 10 ⁹ (Dyne / cm ² )) immediately after film formation, but a tensile stress (about 8 × 10 ^{9 to} 9 × 10 ⁹ ) due to heat treatment. (Dyne / c
m ² )), and the peeled state was good. Regarding the TiN film, the stress is almost the same before and after the heat treatment, and the tensile stress (about 3.9 × 10 ^{9 to} 4.5 × 10
⁹ (Dyne / cm ² ). Further, regarding the silicon oxide film, the stress hardly changes before and after the heat treatment, and the compressive stress (about -9.4 × 10 ⁸ to -1.3 × 10 ^8
9 (Dyne / cm ² ).

From these results, the peeling phenomenon is related to the adhesiveness due to various factors, but is particularly closely related to the internal stress, and when the oxide layer is formed on the nitride layer or the metal layer, the nitriding phenomenon occurs. It can be read that the layer to be peeled can be peeled over the entire surface from the interface between the object layer or the metal layer and the oxide layer.

(Experiment 4) In order to examine the dependence of the heating temperature, the following experiment was conducted.

As a sample, a W film (tungsten film) having a film thickness of 50 nm was formed on a glass substrate by a sputtering method, and then a sputtering method (using a silicon target,
Argon gas flow rate 10 sccm, oxygen gas flow rate 30 sc
cm, film formation pressure 0.4 Pa, sputtering power 3 kW, substrate temperature 300 ° C.), to form a silicon oxide film with a thickness of 200 nm. Then, as in Experiment 1, plasma CV
A base insulating layer (a silicon oxynitride film having a thickness of 50 nm and a silicon oxynitride film having a thickness of 100 nm) and an amorphous silicon film having a thickness of 54 nm are formed by a D method.

Next, after heat treatment is performed by changing the heating temperature condition, the quartz substrate is attached to the surface of the amorphous silicon film (or polysilicon film) by using an adhesive, and the quartz substrate and the glass are bonded by human hands. It was pulled so as to be separated from the substrate, and it was examined whether or not it could be peeled off. As heating temperature condition 1, 500 ° C., 1 hour, as condition 2 450 ° C., 1 hour, as condition 3, 425 ° C., 1 hour, as condition 4, 41
0 ° C., 1 hour, Condition 5 is 400 ° C., 1 hour, Condition 6
As 350 ° C. for 1 hour.

As a result of the experiment, the samples under the conditions 1 to 4 could be peeled off, but the samples under the conditions 5 and 6 could not be peeled off. Therefore, in the peeling method of the present invention, it is preferable to perform heat treatment at 410 ° C. or higher. The temperature of 410 ° C. or higher is the temperature at which hydrogen is released from the film or diffused into the film.

Further, when peeled off, the W film remains on the entire surface of the glass substrate and is laminated (SiO ₂ film by the sputtering method, insulating films (1) and (2) by the PCVD method) on the quartz substrate. The amorphous silicon film) is transferred. Transferred Si
The result of measuring the O ₂ film surface by TXRF is shown in FIG.
The surface roughness Rz (30 points) measured by AFM
Was 5.44 nm. Further, FIG. 22 shows the result of measurement of the 50 nm W film surface formed on a quartz substrate as a reference by TXRF, and the surface roughness Rz (30 points) was 22.8 nm when measured by AFM. In addition, FIG. 23 shows the result of measuring only the quartz substrate by TXRF. 21 and 22 have similar W (tungsten) peaks, the transferred S
It can be seen that a minute metal material (here, W) is attached to the surface of the iO ₂ film.

In the structure of the present invention disclosed in this specification, the peeled layer adhered to the support with an adhesive has a silicon oxide film, and a trace amount of metal is present between the silicon oxide film and the adhesive. A semiconductor device including a material.

In the above structure, the metal material is W,
Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, N
i, Co, Zr, Zn, Ru, Rh, Pd, Os, I
It is characterized by being an element selected from r and Pt, or an alloy material or a compound material containing the above element as a main component.

[0081]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below.

(Embodiment 1) A typical peeling procedure using the present invention will be briefly described below with reference to FIG.

In FIG. 1A, 10 is a substrate, 11 is a nitride layer or a metal layer, 12 is an oxide layer, and 13 is a layer to be peeled.

In FIG. 1A, the substrate 10 can be a glass substrate, a quartz substrate, a ceramic substrate, or the like. Alternatively, a silicon substrate, a metal substrate, or a stainless substrate may be used.

First, as shown in FIG. 1A, a nitride layer or a metal layer 11 is formed on the substrate 10. Typical examples of the nitride layer or the metal layer 11 include Ti, Al, and T.
a, W, Mo, Cu, Cr, Nd, Fe, Ni, Co,
A single layer made of an element selected from Zr, Zn, Ru, Rh, Pd, Os, Ir, and Pt, or an alloy material or a compound material containing the above element as a main component, a stacked layer thereof, or a nitride thereof. For example, a single layer formed using titanium nitride, tungsten nitride, tantalum nitride, molybdenum nitride, or a stacked layer thereof may be used.

Next, the oxide layer 12 is formed on the nitride layer or the metal layer 11. As a typical example of the oxide layer 12, silicon oxide, silicon oxynitride, or a metal oxide material may be used. The oxide layer 12 is formed by the sputtering method,
Any film forming method such as a plasma CVD method or a coating method may be used.

In the present invention, it is important to make the film stress of the oxide layer 12 different from the film stress of the nitride layer or the metal layer 11. Each film thickness is 1 nm to 100
The film stress may be adjusted by appropriately setting the film thickness in the range of 0 nm. Further, in FIG. 1, in order to simplify the process,
Although the example in which the nitride layer or the metal layer 11 is formed in contact with the substrate 10 is shown, an insulating layer or a metal layer is provided between the substrate 10 and the nitride layer or the metal layer 11 to improve the adhesion with the substrate 10. You may improve.

Next, the layer to be peeled 13 is formed on the oxide layer 12. (FIG. 1A) The layer to be peeled 13 is formed of various elements represented by TFT (thin film diode, PI of silicon).
A layer including a photoelectric conversion element having an N junction or a silicon resistance element may be used. In addition, heat treatment can be performed within a range that the substrate 10 can withstand. In the present invention, even if the film stress of the oxide layer 12 and the film stress of the nitride layer or the metal layer 11 are different from each other, film peeling or the like does not occur due to the heat treatment in the manufacturing process of the layer to be peeled 13.

Then, the substrate 10 provided with the nitride layer or the metal layer 11 is peeled off by a physical means.
(FIG. 1B) Since the film stress of the oxide layer 12 and the film stress of the nitride layer or the metal layer 11 are different, the film can be peeled off with a relatively small force. Further, here, an example is shown in which the mechanical strength of the layer to be peeled 13 is assumed to be sufficient. However, when the mechanical strength of the layer to be peeled 13 is insufficient, the layer to be peeled 13 is fixed. Support (not shown)
It is preferable to peel off after attaching.

In this way, the layer to be peeled 13 formed on the oxide layer 12 can be separated from the substrate 10. The state after peeling is shown in FIG.

In the experiment, peeling was confirmed by the peeling method of the present invention even if the metal layer 11 was a tungsten film of 10 nm and the oxide layer 12 was a silicon oxide film of 200 nm formed by the sputtering method. As the material layer 12, a silicon oxide film 100n formed by the sputtering method
Even with m, peeling was confirmed by the peeling method of the present invention. The metal layer 11 is a tungsten film of 50 nm and the oxide layer 12 is a silicon oxide film 400n formed by the sputtering method.
Even with m, peeling was confirmed by the peeling method of the present invention.

After peeling, the peeled layer 13 may be attached to a transfer body (not shown).

Further, the present invention can be used for various manufacturing methods of semiconductor devices. In particular, weight reduction can be achieved by using a plastic substrate for the transfer body and the support body.

In the case of manufacturing a liquid crystal display device, the support may be an opposite substrate and the support may be adhered to the layer to be peeled using a sealant as an adhesive. In this case, the element provided in the layer to be peeled has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate. The order of manufacturing the liquid crystal display device is not particularly limited, and a counter substrate as a supporting body may be attached, and after injecting liquid crystal, the substrate may be peeled off and a plastic substrate as a transfer body may be attached, After the pixel electrode is formed, the substrate may be peeled off, a plastic substrate as a first transfer body may be attached, and then an opposite substrate as a second transfer body may be attached.

In the case of manufacturing a light emitting device represented by a light emitting device having an EL element, a substance that promotes deterioration of the organic compound layer such as moisture and oxygen is introduced from the outside by using the support as a sealing material. It is preferable to completely shield the light emitting device from the outside so as to prevent it. Further, when a light-emitting device represented by a light-emitting device having an EL element is manufactured, a substance which promotes deterioration of an organic compound layer such as moisture or oxygen is sufficiently infiltrated from the outside not only in the support but also in the transfer body. It is preferable to prevent this. The order of manufacturing the light-emitting device is not particularly limited, and after forming the light-emitting element, a plastic substrate as a support may be attached, the substrate may be peeled off, and a plastic substrate as a transfer member may be attached. , After forming the light emitting element, peel off the substrate,
After attaching the plastic substrate as the first transfer body, the plastic substrate as the second transfer body may be attached.

Embodiment Mode 2 In this embodiment mode, a peeling procedure for peeling a substrate while providing a base insulating layer in contact with a layer to be peeled and preventing diffusion of impurities from a nitride layer, a metal layer, or a substrate Is briefly shown using FIG.

In FIG. 2A, 20 is a substrate, 21 is a nitride layer or a metal layer, 22 is an oxide layer, 23a and 23b are base insulating layers, and 24 is a layer to be peeled.

In FIG. 2A, the substrate 20 may be a glass substrate, a quartz substrate, a ceramic substrate, or the like. Alternatively, a silicon substrate, a metal substrate, or a stainless substrate may be used.

First, as shown in FIG. 2A, a nitride layer or a metal layer 21 is formed on the substrate 20. Typical examples of the nitride layer or the metal layer 21 include Ti, Al, and T.
a, W, Mo, Cu, Cr, Nd, Fe, Ni, Co,
A single layer made of an element selected from Zr, Zn, Ru, Rh, Pd, Os, Ir, and Pt, or an alloy material or a compound material containing the above element as a main component, a stacked layer thereof, or a nitride thereof. For example, a single layer formed using titanium nitride, tungsten nitride, tantalum nitride, molybdenum nitride, or a stacked layer thereof may be used.

Next, the oxide layer 22 is formed on the nitride layer or the metal layer 21. As a typical example of the oxide layer 22, silicon oxide, silicon oxynitride, or a metal oxide material may be used. The oxide layer 22 is formed by the sputtering method,
Any film forming method such as a plasma CVD method or a coating method may be used.

In the present invention, it is important to make the film stress of the oxide layer 22 different from the film stress of the nitride layer or the metal layer 21. Each film thickness is 1 nm to 100
The film stress may be adjusted by appropriately setting the film thickness in the range of 0 nm. Further, in FIG. 2, in order to simplify the process,
Although the example in which the nitride layer or the metal layer 21 is formed in contact with the substrate 20 is shown, an insulating layer or a metal layer is provided between the substrate 20 and the nitride layer or the metal layer 21 to improve the adhesion with the substrate 20. You may improve.

Next, the base insulating layer 23 is formed on the oxide layer 22.
a and 23b are formed. Here, the silicon oxynitride film 23a (composition ratio Si =) is formed by plasma CVD at a film forming temperature of 400 ° C. and source gases SiH ₄ , NH ₃ , and N ₂ O.
32%, O = 27%, N = 24%, H = 17%) 50
nm (preferably 10 to 200 nm), and further formed by plasma CVD at a film forming temperature of 400 ° C. and source gases SiH ₄ and N ₂
Silicon oxynitride film 23b (composition ratio S
i = 32%, O = 59%, N = 7%, H = 2%)
The layers are stacked to a thickness of 0 nm (preferably 50 to 200 nm), but are not particularly limited and may be a single layer or a stacked layer of three or more layers.

Next, the layer to be peeled 2 is formed on the base insulating layer 23b.
4 is formed. (Fig. 2 (A))

Such two layers of base insulating layers 23a and 23a
In the case of b, diffusion of impurities from the nitride layer or the metal layer 21 or the substrate 20 can be prevented in the process of forming the layer to be peeled 24. In addition, the base insulating layer 23a,
23b can also improve the adhesion between the oxide layer 22 and the layer to be peeled 24.

When the surface of the nitride layer or the metal layer 21 or the oxide layer 22 is uneven, the surface may be flattened before and after the formation of the base insulating layer. It is preferable to perform flattening because coverage in the layer to be peeled 24 is favorable and element characteristics are easily stabilized when the layer to be peeled 24 including an element is formed. As the flattening treatment, an etch back method or a mechanical chemical polishing method (CMP method) in which a coating film (resist film or the like) is formed and then flattened by etching or the like may be used.

Then, the substrate 20 provided with the nitride layer or the metal layer 21 is peeled off by a physical means.
(FIG. 2B) Since the film stress of the oxide layer 22 is different from the film stress of the nitride layer or the metal layer 21, the film can be peeled off with a relatively small force. In addition, here, an example in which the mechanical strength of the layer to be peeled 24 is assumed to be sufficient is shown, but when the mechanical strength of the layer to be peeled 24 is insufficient, the layer to be peeled 24 is fixed. Support (not shown)
It is preferable to peel off after attaching.

Thus, the layer to be peeled 24 formed on the base insulating layer 22 can be separated from the substrate 20. The state after peeling is shown in FIG.

After peeling, the peeled off layer 24 may be attached to a transfer body (not shown).

Further, the present invention can be used for various manufacturing methods of semiconductor devices. In particular, weight reduction can be achieved by using a plastic substrate for the transfer body and the support body.

In the case of manufacturing a liquid crystal display device, the support may be used as the counter substrate and the seal may be used as the adhesive to adhere the support to the layer to be peeled. In this case, the element provided in the layer to be peeled has a pixel electrode, and a liquid crystal material is filled between the pixel electrode and the counter substrate. The order of manufacturing the liquid crystal display device is not particularly limited, and a counter substrate as a supporting body may be attached, and after injecting liquid crystal, the substrate may be peeled off and a plastic substrate as a transfer body may be attached, After the pixel electrode is formed, the substrate may be peeled off, a plastic substrate as a first transfer body may be attached, and then an opposite substrate as a second transfer body may be attached.

When a light-emitting device represented by a light-emitting device having an EL element is manufactured, a substance that promotes deterioration of the organic compound layer, such as moisture or oxygen, enters from the outside by using the support as a sealing material. It is preferable to completely shield the light emitting device from the outside so as to prevent it. Further, when a light-emitting device represented by a light-emitting device having an EL element is manufactured, a substance which promotes deterioration of an organic compound layer such as moisture or oxygen is sufficiently infiltrated from the outside not only in the support but also in the transfer body. It is preferable to prevent this. The order of manufacturing the light-emitting device is not particularly limited, and after forming the light-emitting element, a plastic substrate as a support may be attached, the substrate may be peeled off, and a plastic substrate as a transfer member may be attached. , After forming the light emitting element, peel off the substrate,
After attaching the plastic substrate as the first transfer body, the plastic substrate as the second transfer body may be attached.

(Embodiment Mode 3) In addition to Embodiment Mode 1, Embodiment Mode 3 shows an example in which laser light irradiation or heat treatment is performed in order to further promote peeling.

In FIG. 4A, 40 is a substrate, 41 is a nitride layer or a metal layer, 42 is an oxide layer, and 43 is a layer to be peeled.

The step of forming the layer to be peeled 43 is the same as that of the first embodiment, and therefore its description is omitted.

After the layer 43 to be peeled is formed, laser light irradiation is performed. (FIG. 3A) As the laser light, a gas laser such as an excimer laser, a solid laser such as a YVO ₄ laser or a YAG laser, or a semiconductor laser may be used. Further, the form of laser oscillation may be continuous oscillation or pulse oscillation, and the shape of the laser beam may be linear, rectangular, circular, or elliptical. The wavelength used may be any of the fundamental wave, the second harmonic, and the third harmonic.

The material used for the nitride layer or the metal layer 41 is preferably a material that easily absorbs laser light, and titanium nitride is preferable. Note that a substrate having a light-transmitting property is used as the substrate 40 in order to pass the laser light.

Then, the substrate 40 provided with the nitride layer or the metal layer 41 is peeled off by a physical means.
(FIG. 4 (B)) Since the film stress of the oxide layer 42 and the film stress of the nitride layer or the metal layer 41 are different, the film can be peeled off with a relatively small force.

By heating the interface between the nitride layer or the metal layer 41 and the oxide layer 42 by irradiating with a laser beam, mutual film stress can be changed to promote peeling. It can be peeled off with a small force. In addition, here, an example in which the mechanical strength of the layer to be peeled 43 is assumed to be sufficient is shown, but when the mechanical strength of the layer to be peeled 43 is insufficient, the layer to be peeled 43 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

In this way, the layer to be peeled 43 formed on the oxide layer 42 can be separated from the substrate 40. The state after peeling is shown in FIG.

Further, it is not limited to laser light, and visible light from a light source such as a halogen lamp, infrared rays, ultraviolet rays, microwaves, etc. may be used.

Further, heat treatment in an electric furnace may be used instead of laser light.

Further, a heat treatment or a laser light irradiation treatment may be carried out before the support is bonded or before the support is peeled by the physical means.

Further, this embodiment can be combined with the second embodiment.

(Embodiment 4) In this embodiment, in addition to Embodiment 1, granular oxide is added to the interface between a nitride layer or a metal layer and an oxide layer in order to further promote peeling. An example of provision is shown in FIG.

In FIG. 5A, 50 is a substrate, 51 is a nitride layer or a metal layer, 52a is a granular oxide, 52b is an oxide layer, and 53 is a layer to be peeled.

Since the steps of forming the nitride layer or the metal layer 51 are the same as those in the first embodiment, description thereof will be omitted.

After forming the nitride layer or the metal layer 51,
A granular oxide 52a is formed. As the granular oxide 52a, a metal oxide material such as ITO (indium oxide-tin oxide alloy) or indium oxide-zinc oxide alloy (In ₂
O ₃ --ZnO), zinc oxide (ZnO), or the like may be used.

Next, an oxide layer 52b is formed so as to cover the granular oxide 52a. As a typical example of the oxide layer 52b, silicon oxide, silicon oxynitride, or a metal oxide material may be used. Note that the oxide layer 23b may be formed by any film formation method such as a sputtering method, a plasma CVD method, or a coating method.

Next, the peeled layer 53 is formed on the oxide layer 52b.
To form. (Figure 5 (A))

Then, the substrate 50 provided with the nitride layer or the metal layer 51 is peeled off by a physical means.
(FIG. 5B) Since the film stress of the oxide layer 52 and the film stress of the nitride layer or the metal layer 51 are different, the film can be peeled off with a relatively small force.

By providing the granular oxide 52b, it is possible to weaken the bonding force between the nitride layer or the metal layer 51 and the oxide layer 52, change the adhesiveness to each other, and promote peeling. It can be peeled off with a small force. Further, here, an example is shown in which the mechanical strength of the layer to be peeled 53 is assumed to be sufficient, but when the mechanical strength of the layer to be peeled 53 is insufficient, the layer to be peeled 53 is fixed. It is preferable that the support (not shown) is attached and then peeled off.

Thus, the layer to be peeled 53 formed on the oxide layer 52b can be separated from the substrate 50. The state after peeling is shown in FIG.

Further, this embodiment mode can be combined with the second embodiment mode or the third embodiment mode.

The present invention having the above structure will be described in more detail with reference to the following examples.

(Embodiment) [Embodiment 1] An embodiment of the present invention will be described with reference to FIGS. Here, a pixel portion and TFTs (n-channel type TFT and p-type TFT) of a driving circuit provided around the pixel portion are provided on the same substrate.
A method of simultaneously producing channel type TFTs will be described in detail.

First, a nitride layer or metal layer 101, an oxide layer 102, and a base insulating film 103 are formed over a substrate 100, a semiconductor film having a crystal structure is obtained, and then an island is formed by etching into a desired shape. Semiconductor layers 104 separated in the shape of
108 is formed.

A glass substrate (# 17) is used as the substrate 100.
37) is used.

Further, as the metal layer 101, Ti, A
l, Ta, W, Mo, Cu, Cr, Nd, Fe, Ni,
Co, Zr, Zn, Ru, Rh, Pd, Os, Ir, P
A single layer made of an element selected from t, an alloy material or a compound material containing the above element as a main component, or a stacked layer thereof may be used. More preferably, a single layer of these nitrides, for example, titanium nitride, tungsten nitride, tantalum nitride, molybdenum nitride, or a stacked layer thereof may be used. Here, the film thickness is 100 by the sputtering method.
nm titanium nitride film is used.

As the oxide layer 102, a single layer made of a silicon oxide material or a metal oxide material, or a laminated layer of these may be used. Here, the film thickness is 2 by the sputtering method.
A 00 nm silicon oxide film is used. This metal layer 101
The bond strength between the oxide layer 102 and the oxide layer 102 is strong in heat treatment and film peeling (also referred to as peeling) or the like does not occur, but the oxide layer 102 can be easily peeled by a physical means in the oxide layer or at the interface.

The base insulating film 103 is formed by plasma CVD at a film forming temperature of 400 ° C. and source gases of SiH ₄ and N 2.
Silicon oxynitride film 103a made of H ₃ and N ₂ O
(Composition ratio Si = 32%, O = 27%, N = 24%, H =
17%) is formed to 50 nm (preferably 10 to 200 nm). Next, after cleaning the surface with ozone water, the oxide film on the surface is removed with dilute hydrofluoric acid (diluted by 1/100). Then, the film formation temperature is 400 ° C. by the plasma CVD method, and the source gas Si
Silicon oxynitride film 103b made of H ₄ and N ₂ O
(Composition ratio Si = 32%, O = 59%, N = 7%, H = 2
%) To have a thickness of 100 nm (preferably 50 to 200 nm), and a semiconductor film having an amorphous structure with a film forming temperature of 300 ° C. and a film forming gas of SiH ₄ by a plasma CVD method without exposing to the atmosphere ( Here, an amorphous silicon film) is formed with a thickness of 54 nm (preferably 25 to 80 nm).

Although the base film 103 has a two-layer structure in this embodiment, it may have a single-layer structure of the insulating film or a structure in which two or more layers are laminated. The material of the semiconductor film is not limited, but is preferably silicon or silicon germanium (Si _x Ge _1-x (X = 0.0001 to 0.0).
2)) Using alloys or the like, known means (sputtering method, LP
It may be formed by a CVD method, a plasma CVD method, or the like. Further, the plasma CVD apparatus may be a single wafer type apparatus or a batch type apparatus. Alternatively, the base insulating film and the semiconductor film may be successively formed in the same film formation chamber without exposure to the air.

Next, after cleaning the surface of the semiconductor film having an amorphous structure, an extremely thin oxide film of about 2 nm is formed on the surface with ozone water. Next, a slight amount of impurity element (boron or phosphorus) is doped to control the threshold value of the TFT. Here, an ion doping method in which diborane (B ₂ H ₆ ) is plasma-excited without mass separation is used, the doping condition is an acceleration voltage of 15 kV, and diborane is hydrogen at 1%.
Flow rate of diluted gas to 30 sccm, dose amount 2 × 10 ¹²
Boron was added to the amorphous silicon film at a rate of / cm ² .

Then, a nickel acetate salt solution containing 10 ppm by weight of nickel is applied by a spinner. Instead of coating, a method of spattering nickel element over the entire surface by a sputtering method may be used.

Next, heat treatment is performed for crystallization to form a semiconductor film having a crystal structure. For this heat treatment, heat treatment of an electric furnace or irradiation of strong light may be used. When it is performed by heat treatment in an electric furnace, it is 4 to 24 at 500 to 650 ° C
You can do it in time. Here, after the heat treatment for dehydrogenation (500 ° C., 1 hour), the heat treatment for crystallization (5
50 ° C., 4 hours) to obtain a silicon film having a crystal structure. Note that here, although crystallization is performed by heat treatment using a furnace, crystallization may be performed by a lamp annealing apparatus. Although a crystallization technique using nickel as a metal element that promotes crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, the crystallization rate is increased,
Irradiation with the first laser light (XeCl: wavelength 308 nm) for repairing defects left in crystal grains is performed in the air or an oxygen atmosphere. Laser light has a wavelength of 400 nm
The following excimer laser light and the second and third harmonics of a YAG laser are used. In any case, using pulsed laser light with a repetition frequency of about 10 to 1000 Hz,
The laser light may be focused at 100 to 500 mJ / cm ² by an optical system and irradiated with an overlap rate of 90 to 95% to scan the surface of the silicon film. Here, irradiation with the first laser light is performed in the atmosphere with a repetition frequency of 30 Hz and an energy density of 393 mJ / cm ² . Since it is performed in the air or an oxygen atmosphere, an oxide film is formed on the surface by irradiation with the first laser light.

Next, after removing the oxide film formed by the irradiation of the first laser light with dilute hydrofluoric acid, the irradiation of the second laser light is performed in a nitrogen atmosphere or in a vacuum to flatten the surface of the semiconductor film. To do. This laser light (second laser light) is an excimer laser light with a wavelength of 400 nm or less, or Y
The second and third harmonics of the AG laser are used. Second
The energy density of the laser light is larger than that of the first laser light, and preferably 30 to 60 m.
Increase J / cm ² . Here, the repetition frequency 30
Irradiation with the second laser beam was performed at a frequency of Hz and an energy density of 453 mJ / cm ² , and the PV value (Peak to Valley, the difference between the maximum height and the minimum height) of the unevenness on the semiconductor film surface was 5
It becomes 0 nm or less. This PV value is obtained by AFM (atomic force microscope).

Further, although the second laser beam is applied to the entire surface in this embodiment, the OFF current can be reduced by the TF of the pixel portion.
Since T is particularly effective, at least the pixel portion may be selectively irradiated.

Next, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm.

Then, a barrier layer is formed on the barrier layer by a sputtering method.
Amorphous silicon containing elemental argon that acts as a tarring site
Forming a film having a thickness of 150 nm. Sputtering of this example
The film forming conditions by the method are as follows: film forming pressure is 0.3 Pa, gas is
(Ar) flow rate is 50 (sccm) and film formation power is 3 kW
And the substrate temperature is 150 ° C. In addition, under the above conditions
Atomic concentration of argon element contained in amorphous silicon film
Is 3 × 10²⁰/ Cm³~ 6 × 10²⁰/ Cm³, The source of oxygen
Child concentration is 1 × 10¹⁹/ Cm³~ 3 x 10¹⁹/ Cm ³And
It Then, using a lamp annealing device at 650 ° C., 3
Gettering is performed by heat treatment for a minute.

Then, the barrier layer is used as an etching stopper to selectively remove the amorphous silicon film containing the argon element which is the gettering site, and then the barrier layer is selectively removed with dilute hydrofluoric acid. In addition, at the time of gettering,
Since nickel tends to move to a region having a high oxygen concentration, it is desirable to remove the barrier layer made of an oxide film after gettering.

Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also referred to as a polysilicon film), a mask made of a resist is formed, and an etching treatment is performed into a desired shape. The semiconductor layers 104 to 108 separated into islands are formed. After forming the semiconductor layer, the resist mask is removed.

Then, after removing the oxide film with an etchant containing hydrofluoric acid and simultaneously cleaning the surface of the silicon film,
An insulating film containing silicon as its main component is formed to be the gate insulating film 109. In this embodiment, 11 is formed by the plasma CVD method.
A silicon oxynitride film with a thickness of 5 nm (composition ratio Si = 32
%, O = 59%, N = 7%, H = 2%).

Next, as shown in FIG. 6A, a first conductive film 110a having a film thickness of 20 to 100 nm and a second conductive film 1 having a film thickness of 100 to 400 nm are formed on the gate insulating film 109.
And 10b are laminated. In this embodiment, a tantalum nitride film with a thickness of 50 nm and a thickness of 370 are formed on the gate insulating film 109.
nm tungsten films are sequentially stacked.

As the conductive material for forming the first conductive film and the second conductive film, Ta, W, Ti, Mo, Al and Cu are used.
It is formed of an element selected from the above or an alloy material or a compound material containing the above element as a main component. A semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus as the first conductive film and the second conductive film,
You may use AgPdCu alloy. Further, the structure is not limited to the two-layer structure.
A three-layer structure in which a Si) film and a titanium nitride film having a film thickness of 30 nm are sequentially laminated may be used. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum may be used instead of the aluminum-silicon alloy (Al-Si) film of the second conductive film. An alloy film of titanium (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film.
Further, it may have a single layer structure.

Next, as shown in FIG. 6B, masks 112 to 117 made of resist are formed by a light exposure process, and a first etching process for forming gate electrodes and wirings is performed. The first etching process is performed under the first and second etching conditions. ICP (In
It is advisable to use an inductively coupled plasma etching method. Using ICP etching method,
Etching conditions (electric power applied to the coil type electrode,
By appropriately adjusting the amount of electric power applied to the electrode on the substrate side, the electrode temperature on the substrate side, etc., the film can be etched into a desired tapered shape. As the etching gas, chlorine-based gas represented by Cl ₂ , BCl ₃ , SiCl ₄ , CCl ₄ or the like or CF ₄ , SF ₆ , NF _{3 is used.}
A fluorine-based gas typified by, for example, or O ₂ can be appropriately used.

In this embodiment, 150 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage) to apply a substantially negative self-bias voltage. The electrode area size on the substrate side is 12.5 cm × 12.5 cm, and the coil type electrode area size (here, a quartz disk provided with a coil) is a disk having a diameter of 25 cm. The W film is etched under the first etching condition so that the end portion of the first conductive layer is tapered. The etching rate for W under the first etching condition is 200.39 nm / m
Etching rate for in and TaN is 80.32 nm
/ Min, and the selection ratio of W to TaN is about 2.5.
Is. In addition, depending on the first etching condition, W
The taper angle of is about 26 °. After that, the masks 112 to 117 made of resist are not removed, and the second etching conditions are changed to CF ₄ and Cl _{2 as} etching gas, and the gas flow rate ratio of each is 30/30 (sccm).
With a pressure of 1 Pa, RF (1 W
(3.56 MHz) Power was applied to generate plasma and etching was performed for about 30 seconds. 20 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. Under the second etching condition in which CF ₄ and Cl ₂ are mixed, the W film and the TaN film are etched to the same extent. The etching rate for W under the second etching condition is 58.97 nm / min, Ta
The etching rate for N is 66.43 nm / min. Note that in order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased at a rate of about 10 to 20%.

In the first etching process, the shape of the mask made of resist is adjusted to
The edges of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. The angle of the tapered portion may be 15 to 45 °.

Thus, the first shape conductive layers 119 to 123 (first conductive layers 119a to 123a and second conductive layer 119b) formed of the first conductive layer and the second conductive layer are formed by the first etching treatment. ~ 123b) are formed. The insulating film 109 serving as a gate insulating film is etched by about 10 to 20 nm, and becomes a gate insulating film 118 in which a region which is not covered with the first shape conductive layers 119 to 123 is thinned.

Then, a second etching process is performed without removing the resist mask. Here, SF ₆ , Cl _2, and O ₂ are used as etching gases, and the gas flow rate ratios thereof are set to 24/12/24 (sccm).
700W RF (13.56MH) on coil type electrode with pressure of Pa
z) Applying electric power to generate plasma for etching 2
It went for 5 seconds. RF of 10W on the substrate side (sample stage)
(13.56MHz) Apply power and apply substantially negative self-bias voltage. In the second etching treatment, the etching rate for W is 227.3 nm / min, the etching rate for TaN is 32.1 nm / min, and
The selection ratio of W with respect to aN is 7.1, and the insulating film 118
Etching rate for SiON is 33.7 nm
/ Min, and the selection ratio of W to SiON is 6.8.
It is 3. As described above, when SF ₆ is used as the etching gas, the selection ratio to the insulating film 118 is high, so that the film loss can be suppressed. In this embodiment, the insulating film 118 is reduced by about 8 nm.

By this second etching treatment, the taper angle of W became 70 °. The second conductive layers 126b to 131b are formed by this second etching process. On the other hand, the first conductive layer is hardly etched,
Of the conductive layers 126a to 131a. Note that the first conductive layers 126a to 131a are the first conductive layers 119a to 12a.
It is almost the same size as 4a. Actually, the width of the first conductive layer is about 0.3 μm as compared with that before the second etching process.
In some cases, the line width may recede by about 0.6 μm, but there is almost no change in size.

Further, instead of the two-layer structure, a three-layer structure in which a tungsten film having a film thickness of 50 nm, an aluminum-silicon alloy (Al-Si) film having a film thickness of 500 nm, and a titanium nitride film having a film thickness of 30 nm are sequentially laminated is provided. In this case, as the first etching condition of the first etching process, BCl ₃ , Cl ₂ and O ₂ are used as source gases, and the gas flow rate ratio of each is set to 65/10/5 (sccm). The RF power (13.56 MHz) of 300 W is applied to the (sample stage), and the RF power (13.56 MHz) of 450 W is applied to the coil-shaped electrode at a pressure of 1.2 Pa to generate plasma for 117 seconds. Etching may be performed. As the second etching condition of the first etching process, CF ₄ , Cl _2, and O ₂ are used, and the gas flow rate ratio of each is 25/2.
5/10 (sccm), 20W of RF (13.56MHz) power was also applied to the substrate side (sample stage),
RF of 500 W (13.
56MHz) Power is generated and plasma is generated for about 30
It suffices to perform the etching for about a second. BCl ₃ and Cl ₂ are used for the second etching treatment, and the gas flow rate ratio of each is set to 20/60 (sccm) and the substrate side (sample stage)
RF (13.56 MHz) power of 100 W is applied to the coil, and a pressure of 1.2 Pa is applied to the coil-shaped electrode to generate R of 600 W.
It suffices to apply F (13.56 MHz) power to generate plasma and perform etching.

Next, after removing the resist mask, the first doping process is performed to obtain the state of FIG. 6 (D). The doping treatment may be performed by an ion doping method or an ion implantation method. The conditions of the ion doping method are a dose amount of 1.5 × 10 ¹⁴ atoms / cm ² and an acceleration voltage of 60.
~ 100 keV. Phosphorus (P) or arsenic (As) is typically used as the impurity element imparting n-type. In this case, the first conductive layer 126 and the second conductive layer 126
˜130 serve as a mask for the impurity element imparting n-type, and the first impurity regions 132 to 136 are formed in a self-aligned manner. 1 × is included in the first impurity regions 132 to 136.
An impurity element imparting n-type is added within a concentration range of 10 ¹⁶ to 1 × 10 ¹⁷ / cm ³ . Here, a region having the same concentration range as the first impurity region is also called an n ⁻ region.

Although the first doping process is performed after removing the resist mask in this embodiment, the first doping process may be performed without removing the resist mask.

Next, as shown in FIG. 7A, masks 137 to 139 made of resist are formed and a second doping process is performed. A mask 137 is a mask that protects a channel formation region of a semiconductor layer that forms a p-channel TFT of a driver circuit and a peripheral region thereof, and a mask 138 is a semiconductor layer that forms one of n-channel TFTs of the driver circuit. The mask is a mask that protects the channel formation region and its peripheral region, and the mask 139 is a mask that protects the channel formation region of the semiconductor layer forming the TFT of the pixel portion, the peripheral region thereof, and the region to be the storage capacitor.

The condition of the ion doping method in the second doping process is that the dose amount is 1.5 × 10 ¹⁵ atoms / cm ² and the accelerating voltage is 60 to 100 keV, and phosphorus (P) is doped. Here, the second conductive layers 126 b to 1
An impurity region is formed in each semiconductor layer in a self-aligned manner using 28b as a mask. Of course, it is not added to the region covered with the masks 137 to 139. In this way, the second impurity regions 140 to 142 and the third impurity region 144 are formed. 1 × 10 ²⁰ is formed in the second impurity regions 140 to 142.
An impurity element imparting n-type is added in a concentration range of 1 × 10 ²¹ / cm ³ . Here, a region having the same concentration range as the second impurity region is also called an n ⁺ region.

Further, the third impurity region is formed to have a lower concentration than the second impurity region by the first conductive layer, and is 1 × 1.
An impurity element imparting n-type is added in the concentration range of 0 ¹⁸ to 1 × 10 ¹⁹ / cm ³ . Note that the third impurity region has a concentration gradient in which the impurity concentration increases toward the end portion of the tapered portion because doping is performed by passing through the portion of the first conductive layer having a tapered shape. . Here, a region having the same concentration range as the third impurity region is also called an n ⁻ region. Further, in the region covered with the masks 138 and 139, the impurity element is not added in the second doping treatment,
The first impurity regions 146 and 147 are formed.

Next, a mask 137 made of resist is used.
After removing 139, a mask 1 made of a new resist
48 to 150 are formed and a third doping process is performed as shown in FIG.

In the drive circuit, by the third doping treatment, a fourth impurity element which imparts p-type conductivity is added to the semiconductor layer forming the p-channel TFT and the semiconductor layer forming the storage capacitor. Impurity region 151,
152 and fifth impurity regions 153 and 154 are formed.

In addition, in the fourth impurity regions 151 and 152,
Is 1 × 10²⁰~ 1 x 10^{twenty one}/cm³P-type in the concentration range of
The impurity element to be added is added. In addition, the fourth failure
Phosphorus (P) was added to the pure material regions 151 and 152 in the previous process.
Added region (n^-Region), but the
Conductive because the concentration of pure element is 1.5 to 3 times that of pure element
The mold is p-type. Here, the fourth impurity region and
P in the same concentration range ⁺Also called a region.

The fifth impurity regions 153 and 154 are formed in a region overlapping the tapered portion of the second conductive layer 127a, and have a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ^3. An impurity element imparting p-type is added. Here, a region having the same concentration range as the fifth impurity region is also called ap ⁻ region.

Through the steps up to this point, each semiconductor layer has n
An impurity region having a conductivity type of p-type or p-type is formed. The conductive layers 126 to 129 serve as the gate electrodes of the TFT. In addition, the conductive layer 130 serves as one electrode which forms a storage capacitor in the pixel portion. Further, the conductive layer 131 forms a source wiring in the pixel portion.

Next, an insulating film (not shown) is formed to cover almost the entire surface. In this embodiment, a silicon oxide film having a film thickness of 50 nm is formed by the plasma CVD method. Of course, this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

Next, a step of activating the impurity element added to each semiconductor layer is performed. This activation step is performed by a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating the back surface with a YAG laser or an excimer laser, a heat treatment using a furnace, or a combination of these methods. By the method.

In this embodiment, an example in which the insulating film is formed before the activation is shown, but after the activation is performed,
It may be a step of forming an insulating film.

Next, a step of hydrogenating the semiconductor layer is performed by forming a first interlayer insulating film 155 made of a silicon nitride film and performing heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours). (FIG. 7C) This step is a step of terminating the dangling bond of the semiconductor layer by hydrogen contained in the first interlayer insulating film 155. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film (not shown) made of a silicon oxide film. However, in this embodiment, since the material containing aluminum as the main component is used as the second conductive layer, it is important to set the heat treatment conditions that the second conductive layer can withstand in the hydrogenation step. Plasma hydrogenation (using hydrogen excited by plasma) may be performed as another means of hydrogenation.

Then, a second interlayer insulating film 156 made of an organic insulating material is formed on the first interlayer insulating film 155. In this embodiment, an acrylic resin film having a thickness of 1.6 μm is formed. Next, a contact hole reaching the source wiring 131, a contact hole reaching the conductive layers 129 and 130, and a contact hole reaching each impurity region are formed. In this embodiment, a plurality of etching processes are sequentially performed.
In this embodiment, after etching the second interlayer insulating film using the first interlayer insulating film as an etching stopper, the first interlayer insulating film is etched using an insulating film (not shown) as an etching stopper, and then the insulating film (illustrated). Not etched).

After that, wirings and pixel electrodes are formed by using Al, Ti, Mo, W and the like. As a material of these electrodes and pixel electrodes, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component, or a laminated film thereof. Thus, the source or drain electrodes 157 to 162, the gate wiring 164, the connection wiring 163,
The pixel electrode 165 is formed.

As described above, the n-channel TFT 20
1, p-channel TFT 202, n-channel TFT 2
The pixel portion 207 including the driver circuit 206 including the pixel 03, the pixel TFT 204 including the n-channel TFT, and the storage capacitor 205 can be formed over the same substrate. (FIG. 8) In this specification, such a substrate is referred to as an active matrix substrate for convenience.

In the pixel portion 207, the pixel TFT 204
The (n-channel TFT) has a channel formation region 169,
A first impurity region (n ⁻ region) 147 formed outside the conductive layer 129 forming the gate electrode and a second impurity region (n ⁻ ) functioning as a source region or a drain region (n
⁺ Area) 142, 171. Further, a fourth impurity region 152 and a fifth impurity region 154 are formed in the semiconductor layer functioning as one electrode of the storage capacitor 205. The storage capacitor 205 is formed of the second electrode 130 and the semiconductor layers 152, 154, and 170 using the insulating film (the same film as the gate insulating film) 118 as a dielectric.

In the drive circuit 206, the n-channel TFT 201 (first n-channel TFT) is the channel formation region 166 and the conductive layer 12 forming the gate electrode.
Third impurity region (n
^- has a second impurity region (n ⁺ region) 140 functioning as a region) 144 and a source region or a drain region.

In the drive circuit 206, the p-channel TFT 202 has a channel formation region 167 and a fifth impurity region (p ⁻ region) 153 which overlaps with a part of the conductive layer 127 forming the gate electrode via an insulating film. A fourth impurity region (p
⁺ Area) 151.

In the drive circuit 206, the n-channel TFT 203 (second n-channel TFT) has the channel forming region 168 and the conductive layer 1 forming the gate electrode.
A first impurity region (n ⁻ region) 146 and a second impurity region (n ⁺ region) 141 functioning as a source region or a drain region are provided outside 28.

A drive circuit 206 may be formed by appropriately combining these TFTs 201 to 203 to form a shift register circuit, a buffer circuit, a level shifter circuit, a latch circuit, and the like. For example, when forming a CMOS circuit, an n-channel TFT 201 and a p-channel TFT
It may be formed by connecting 202 complementarily.

Particularly, for a buffer circuit having a high driving voltage,
The structure of the n-channel TFT 203 is suitable for the purpose of preventing deterioration due to the hot carrier effect.

For a circuit in which reliability is the highest priority,
The structure of the n-channel TFT 201 having the GOLD structure is suitable.

Further, since the reliability can be improved by improving the flatness of the semiconductor film surface, G
In the TFT having the OLD structure, sufficient reliability can be obtained even if the area of the impurity region overlapping the gate electrode and the gate insulating film is reduced. Specifically, in the GOLD structure TFT, sufficient reliability can be obtained even if the size of the gate electrode tapered portion is reduced.

In the GOLD structure TFT, the parasitic capacitance increases as the gate insulating film becomes thinner. However, if the size of the tapered portion of the gate electrode (first conductive layer) is reduced to reduce the parasitic capacitance, f characteristic (frequency characteristic)
Also, the TFT can be operated at a higher speed, and the TFT has sufficient reliability.

Also in the pixel TFT of the pixel portion 207, the reduction of the off current and the variation can be realized by the irradiation of the second laser light.

Further, although an example of manufacturing an active matrix substrate for forming a reflection type display device is shown in this embodiment, when the pixel electrode is formed of a transparent conductive film, the number of photomasks is increased by one, but the light transmission is increased. Mold display device can be formed.

Although the glass substrate is used in this embodiment, it is not particularly limited, and a quartz substrate, a semiconductor substrate, a ceramics substrate, or a metal substrate can be used.

After obtaining the state shown in FIG. 8, the oxide layer 10
If the mechanical strength of the layer including the TFT (layer to be peeled) provided on the substrate 2 is sufficient, the substrate 100 may be peeled off. In this example, since the mechanical strength of the layer to be peeled is insufficient,
It is preferable to peel off after attaching a support (not shown) for fixing the layer to be peeled.

[Embodiment 2] In this embodiment, a process of peeling the substrate 100 from the active matrix substrate manufactured in Embodiment 1 and adhering a plastic substrate to manufacture an active matrix type liquid crystal display device will be described below. To do. FIG. 9 is used for the description.

In FIG. 9A, reference numeral 400 denotes a substrate, 40
1 is a nitride layer or a metal layer, 402 is an oxide layer, 403
Is a base insulating layer, 404a is an element of the driving circuit 413, and 40
Reference numeral 4b denotes elements 404b and 405 of the pixel portion 414, which are pixel electrodes. Here, the element refers to a semiconductor element (typically a TFT) or a MIM element used as a switching element of a pixel in an active matrix type liquid crystal display device. The active matrix substrate shown in FIG. 9A is a simplified version of the active matrix substrate shown in FIG. 8, and the substrate 100 in FIG.
This corresponds to the substrate 400 in (A). Similarly, FIG.
Reference numeral 401 in FIG. 8A indicates 101 in FIG. 8, reference numeral 402 in FIG. 9A indicates reference numeral 102 in FIG. 8, and reference numeral 403 in FIG.
8 indicates 103, 404a in FIG. 9A indicates 201 and 202 in FIG. 8, and 404b in FIG. 9A.
8 in FIG. 8 and 405 in FIG.
It corresponds to 165 in each.

First, according to the first embodiment, after obtaining the active matrix substrate in the state of FIG. 8, the alignment film 406a is formed on the active matrix substrate of FIG. 8 and rubbing treatment is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for holding the space between the substrates was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, spherical spacers may be dispersed over the entire surface of the substrate instead of the columnar spacers.

Next, a counter substrate to be the support 407 is prepared. The counter substrate is provided with a color filter (not shown) in which a colored layer and a light shielding layer are arranged corresponding to each pixel. Further, a light-shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light shielding layer was provided. Next, a counter electrode 408 made of a transparent conductive film was formed in the pixel portion over the planarization film, an alignment film 406b was formed over the entire surface of the counter substrate, and a rubbing treatment was performed.

Then, the active matrix substrate 400 on which the pixel portion and the driving circuit are formed and the support 407 are attached to each other with a sealing material which becomes an adhesive layer 409. A filler is mixed in the sealing material, and the two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. After that, a liquid crystal material 410 is injected between both substrates and completely sealed by a sealant (not shown). A known liquid crystal material may be used as the liquid crystal material 410 (FIG. 9B).

Then, the substrate 400 provided with the nitride layer or the metal layer 401 is peeled off by a physical means. (FIG. 9C) Since the film stress of the oxide layer 402 is different from the film stress of the nitride layer or the metal layer 401, the film can be peeled off with a relatively small force.

Next, an adhesive layer 411 made of epoxy resin or the like.
It is attached to the transfer body 412 by. In this embodiment, the transfer member 412 is made of a plastic film substrate to reduce the weight.

In this way, a flexible active matrix type liquid crystal display device is completed. Then, if necessary, the flexible substrate 412 or the counter substrate is cut into a desired shape. Further, a polarizing plate (not shown) and the like are appropriately provided by using a known technique. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 3] In Embodiment 2, an example was shown in which a counter substrate as a support was attached, a liquid crystal was injected, and then the substrate was peeled off to attach a plastic substrate as a transfer body. In the embodiment, after forming the active matrix substrate shown in FIG. 8, the substrate is peeled off, and the plastic substrate as the first transfer body and the plastic substrate as the second transfer body are attached. Figure 10 for explanation
To use.

In FIG. 10A, reference numeral 500 denotes a substrate,
01 is a nitride layer or a metal layer, 502 is an oxide layer, 50
3 is a base insulating layer, 504 a is an element of the driving circuit 514, 5
Reference numeral 04b denotes elements 504b and 505 of the pixel portion 515, which are pixel electrodes. The active matrix substrate shown in FIG. 10A is a simplified version of the active matrix substrate shown in FIG. 8, and the substrate 100 in FIG.
This corresponds to the substrate 500 in (A). Similarly, FIG.
Reference numeral 501 in (A) corresponds to 101 in FIG. 8 and 101 in FIG.
Reference numeral 502 in FIG. 8 corresponds to 102 in FIG. 8 and 5 in FIG.
03 is the same as 103 in FIG. 8 and 504a in FIG.
Is denoted by 201 and 202 in FIG. 8 and 5 in FIG.
04b corresponds to 204 in FIG. 8 and 505 in FIG.
Correspond to 165 in FIG. 8, respectively.

First, according to the first embodiment, after obtaining the active matrix substrate in the state of FIG. 8, the substrate 500 provided with the nitride layer or the metal layer 501 is peeled off by a physical means. (FIG. 10B) Since the film stress of the oxide layer 502 and the film stress of the nitride layer or the metal layer 501 are different, the film can be peeled off with a relatively small force.

Next, an adhesive layer 506 made of epoxy resin or the like.
Then, it is attached to the transfer body 507 (first transfer body). In this embodiment, the transfer body 507 is made of a plastic film substrate to reduce the weight. (Figure 10 (C))

Then, an alignment film 508a is formed and a rubbing process is performed. In this example, before forming the alignment film, a columnar spacer (not shown) for holding the space between the substrates was formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, spherical spacers may be dispersed over the entire surface of the substrate instead of the columnar spacers.

Next, a counter substrate to be the support 510 (second transfer body) is prepared. This counter substrate has a colored layer,
A color filter (not shown) in which the light shielding layer is arranged corresponding to each pixel is provided. Further, a light-shielding layer was also provided in the drive circuit portion. A flattening film (not shown) covering the color filter and the light shielding layer was provided. Next, a counter electrode 509 made of a transparent conductive film was formed on the flattening film in the pixel portion, an alignment film 508b was formed over the entire surface of the counter substrate, and rubbing treatment was performed.

Then, the plastic film substrate 507 to which the pixel portion and the driving circuit are adhered and the supporting body 510 are attached to each other with a sealing material which becomes an adhesive layer 512. (Fig. 10
(D) The filler is mixed in the sealing material, and the filler and the columnar spacers provide a uniform spacing.
The substrates are bonded together. After that, a liquid crystal material 513 is injected between both substrates and completely sealed with a sealant (not shown). (FIG. 10D) A known liquid crystal material may be used as the liquid crystal material 513.

In this way, a flexible active matrix type liquid crystal display device is completed. Then, if necessary, the flexible substrate 507 or the counter substrate is cut into a desired shape. Further, a polarizing plate (not shown) and the like are appropriately provided by using a known technique. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 4] The structure of the liquid crystal module obtained in Embodiment 2 or 3 will be described with reference to the top view of FIG. The substrate 412 in the second embodiment or the substrate 507 in the third embodiment corresponds to the substrate 301.

A pixel portion 304 is arranged in the center of the substrate 301. A source signal line driver circuit 302 for driving a source signal line is arranged above the pixel portion 304. A gate signal line driver circuit 303 for driving a gate signal line is arranged on the left and right of the pixel portion 304. In the example shown in this embodiment, the gate signal line drive circuit 303 is arranged symmetrically with respect to the pixel portion, but this may be arranged on only one side, and the designer may consider the substrate size of the liquid crystal module or the like. May be selected as appropriate. However, considering the operation reliability and drive efficiency of the circuit,
The symmetrical arrangement shown in is preferable.

Input of a signal to each drive circuit is performed by a flexible print circuit (FPC) 3
It starts from 05. The FPC 305 opens a contact hole in the interlayer insulating film and the resin film so as to reach the wiring arranged up to a predetermined position on the substrate 301, and
After forming 09, it is pressure-bonded through an anisotropic conductive film or the like. In this embodiment, the connection electrode is made of ITO.

A sealant 307 is applied to the periphery of the driving circuit and the pixel portion along the outer circumference of the substrate, and a constant gap is formed by a spacer 310 formed on the film substrate in advance (a gap between the substrate 301 and the counter substrate 306). The counter substrate 306 is attached while maintaining After that, a liquid crystal material is injected from a portion where the sealant 307 is not applied and is sealed with a sealant 308. The liquid crystal module is completed through the above steps.

Although an example in which all the driving circuits are formed on the film substrate is shown here, several ICs may be used as a part of the driving circuits.

Further, this embodiment can be freely combined with the first embodiment.

[Embodiment 5] In Embodiment 1, an example of a reflective display device in which the pixel electrode is formed of a reflective metal material is shown, but in this embodiment, the pixel electrode is made of a light-transmissive conductive material. An example of a transmissive display device formed of a film is shown.

Example 1 up to the step of forming the interlayer insulating film
Since it is the same as, it is omitted here. After the TFT and the interlayer insulating film are formed according to the first embodiment, the pixel electrode 601 made of a light-transmitting conductive film is formed. As the light-transmitting conductive film, ITO (indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy (In ₂ O ₃ —Z
nO), zinc oxide (ZnO), or the like may be used.

After that, a contact hole is formed in the interlayer insulating film 600. Next, the connection electrode 6 overlapping the pixel electrode
02 is formed. The connection electrode 602 is connected to the drain region through a contact hole. At the same time as the connection electrode, the source electrode or drain electrode of another TFT is also formed.

Although an example in which all the drive circuits are formed on the substrate is shown here, several ICs may be used as a part of the drive circuits.

The active matrix substrate is formed as described above. Using this active matrix substrate, after peeling off the substrate, a plastic substrate is adhered thereto to manufacture a liquid crystal module according to Examples 2 to 4, a backlight 604 and a light guide plate 605 are provided, and a cover 606.
Then, an active matrix type liquid crystal display device as shown in FIG. 12 is partially completed. In addition,
The cover and the liquid crystal module are attached using an adhesive or an organic resin. Further, when the plastic substrate and the counter substrate are attached to each other, they may be surrounded by a frame and filled with an organic resin between the frame and the substrate for adhesion. Further, since it is a transmissive type, the polarizing plate 603 is attached to both the plastic substrate and the counter substrate.

This embodiment can be freely combined with Embodiments 1 to 4.

[Embodiment 6] In this embodiment, an example of manufacturing a light emitting device having an organic light emitting element formed on a plastic substrate is shown in FIG.

In FIG. 13A, reference numeral 600 denotes a substrate, 6
01 is a nitride layer or a metal layer, 602 is an oxide layer, 60
3 is a base insulating layer, 604a is an element of the drive circuit 611, 6
04b and 604c are elements of the pixel portion 612, and 605 is an EL element.
It is an element (Organic Light Emitting Device). Here, the element refers to a semiconductor element (typically a TFT) used as a switching element of a pixel in an active matrix light emitting device, a MIM element, an EL element, or the like. Then, the interlayer insulating film 60 is formed so as to cover these elements.
6 is formed. The interlayer insulating film 606 preferably has a flatter surface after film formation. The interlayer insulating film 606
Need not necessarily be provided.

601 to 60 provided on the substrate 600
3 may be formed according to any one of the second to fourth embodiments.

These elements (604a, 604b, 60)
4c) is included in the n-channel TFT 2 of the first embodiment.
01, it may be manufactured according to the p-channel TFT 202 of the first embodiment. Although an example in which two TFTs are used for one pixel is shown here, three or more TFTs may be used.

The EL element 605 includes a layer containing an organic compound (organic light emitting material) capable of obtaining luminescence generated by applying an electric field (hereinafter referred to as an organic light emitting layer), an anode layer, and a cathode layer. have.
Luminescence in an organic compound includes light emission when returning from a singlet excited state to a ground state (fluorescence) and light emission when returning from a triplet excited state to a ground state (phosphorescence),
The light emitting device of the present invention may use any one of the above-mentioned light emissions, or may use both lights. In this specification, all layers formed between the anode and the cathode of the EL element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer,
An electron injection layer, a hole transport layer, an electron transport layer, etc. are included. Basically, an EL element has a structure in which an anode / a light emitting layer / a cathode are laminated in this order. In addition to this structure, an anode / hole injection layer / light emitting layer / cathode and an anode / hole injection layer are also provided. It may have a structure in which the layers of / light emitting layer / electron transporting layer / cathode are laminated in this order.

When the state shown in FIG. 13A is obtained by the above method, the support 608 is attached by the adhesive layer 607. (FIG. 13B) In this embodiment, a plastic substrate is used as the support 608. Specifically, as the support, a resin substrate having a thickness of 10 μm or more, such as PES (polyethylene monkey file), PC (polycarbonate),
PET (polyethylene terephthalate) or PEN
(Polyethylene naphthalate) can be used.
Note that when it is located on the observer side (user side of the light emitting device) when viewed from the EL element, the support 608 and the adhesive layer 607 are provided.
Must be a material that transmits light.

Next, the substrate 600 provided with the nitride layer or the metal layer 601 is peeled off by a physical means. (FIG. 13C) Since the film stress of the oxide layer 602 and the film stress of the nitride layer or the metal layer 601 are different,
It can be peeled off with a relatively small force.

Next, an adhesive layer 609 made of epoxy resin or the like.
To be attached to the transfer body 610. (FIG. 13D) In this embodiment, the transfer body 610 is made of a plastic film substrate to reduce the weight.

Thus, the flexible support 608,
A flexible light emitting device sandwiched between the transfer bodies 610 having flexibility can be obtained. The support 60
8 and the transfer body 610 are made of the same material, the coefficients of thermal expansion become equal to each other, so that it is possible to reduce the influence of stress strain due to temperature change.

Then, if necessary, the support 608 having flexibility and the transfer body 610 having flexibility are divided into desired shapes. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 7] In Embodiment 6, an example was shown in which after the support was attached, the substrate was peeled off and the plastic substrate as the transfer body was attached. However, in this embodiment, the substrate is peeled off. After that, a plastic substrate as a first transfer body and a plastic substrate as a second transfer body are attached to each other to manufacture a light emitting device having an EL element. FIG. 14 is used for the description.

In FIG. 14A, 700 is a substrate, 7
01 is a nitride layer or a metal layer, 702 is an oxide layer, 70
3 is a base insulating layer, 704a is an element of the driving circuit 711, 7
04b and 704c are elements of the pixel portion 712, and 705 is EL
It is an element (Organic Light Emitting Device). Here, the element refers to a semiconductor element (typically a TFT) used as a switching element of a pixel in an active matrix light emitting device, a MIM element, an EL element, or the like. Then, the interlayer insulating film 706 is formed so as to cover these elements.
To form. The surface of the interlayer insulating film 706 after film formation is preferably flatter. Note that the interlayer insulating film 706 does not necessarily have to be provided.

[0232] Note that 701 to 70 provided on the substrate 700.
3 may be formed according to any one of the second to fourth embodiments.

These elements (704a, 704b, 70)
4c) is included in the n-channel TFT 2 of the first embodiment.
01, it may be manufactured according to the p-channel TFT 202 of the first embodiment.

When the state shown in FIG. 14A is obtained by the above method, the substrate 700 provided with the nitride layer or the metal layer 701 is peeled off by a physical means. (Fig. 14
(B) Since the film stress of the oxide layer 702 and the film stress of the nitride layer or the metal layer 701 are different, the film can be peeled off with a relatively small force.

Next, an adhesive layer 709 made of epoxy resin or the like.
It is attached to a transfer body (first transfer body) 710 by. In this embodiment, the transfer body 710 is made of a plastic film substrate to reduce the weight.

Then, a base material (second transfer member) 708 is attached by an adhesive layer 707. (FIG. 14C) In this embodiment, a plastic substrate is used as the base material 708.
Specifically, as the transfer body 710 and the base material 708, a resin substrate having a thickness of 10 μm or more, for example, PES (polyethylene monkey file), PC (polycarbonate), PET.
(Polyethylene terephthalate) or PEN (polyethylene naphthalate) can be used. In addition,
When located on the observer side (user side of the light emitting device) when viewed from the EL element, the base material 708 and the adhesive layer 707 need to be a material that transmits light.

Thus, a flexible light emitting device sandwiched by the flexible base material 708 and the flexible transfer member 710 can be obtained. When the base material 708 and the transfer body 710 are made of the same material, the coefficients of thermal expansion become equal to each other, which makes it possible to reduce the influence of stress strain due to temperature change.

Then, if necessary, the flexible base material 708 and the flexible transfer body 710 are divided into desired shapes. Then, an FPC (not shown) was attached using a known technique.

[Embodiment 8] In Embodiment 6 or Embodiment 7, an example of obtaining a flexible light emitting device sandwiched by flexible substrates is shown. Oxygen is easily transmitted, and deterioration of the organic light emitting layer is promoted by these substances, so that the life of the light emitting device is easily shortened.

Therefore, in this embodiment, a plurality of films (hereinafter referred to as barrier films) for preventing oxygen and moisture from entering the organic light emitting layer of the EL element on the plastic substrate, and the barrier film between the barrier films. A layer having a smaller stress (stress relaxation film) is provided. In this specification, a film obtained by stacking a barrier film and a stress relaxation film is called a sealing film.

Specifically, two or more layers of inorganic barrier films (hereinafter referred to as barrier films) are provided, and a stress relaxation film having a resin between the two barrier films (hereinafter, stress relaxation film). Called). Then, an EL element is formed on the three or more layers of insulating film and sealed to form a light emitting device. The configuration other than the substrate is the same as that of the sixth or seventh embodiment, and therefore the description thereof is omitted here.

As shown in FIG. 15, a film substrate 810.
Two or more barrier films are provided on the barrier film, and a stress relaxation film is provided between the two barrier films. As a result, a sealing film in which the barrier film and the stress relaxation film are laminated is formed between the film substrate 810 and the second adhesive layer 809.

Here, a film made of silicon nitride is formed as a barrier film 811a on the film substrate 810 by sputtering, and a stress relaxation film 811b having polyimide is formed on the barrier film 811a. A film made of silicon nitride is formed over 811b as a barrier film 811c by sputtering. Barrier film 811a, stress relaxation film 8
11b and a barrier film 811c are laminated to form a sealing film 811.
Collectively. Then, the film substrate 810 provided with the sealing film 811 may be attached to a layer to be peeled including an element by using the second adhesive layer 809.

Similarly, a film made of silicon nitride is formed as a barrier film 814a on the film substrate 812 by sputtering, and a stress relaxation film 814b having polyimide is formed on the barrier film 814a. A film made of silicon nitride is formed over 814b as a barrier film 814c by sputtering. Barrier film 814a, stress relaxation film 81
The film in which 4b and the barrier film 814c are stacked is collectively referred to as a sealing film 814. Then, the film substrate 812 provided with the sealing film 814 may be attached to a layer to be peeled including an element by using the second adhesive layer 809.

Note that the barrier film may be provided in two or more layers. Then, for the barrier film, silicon nitride, silicon nitride oxide, aluminum oxide, aluminum nitride, aluminum nitride oxide, or aluminum nitride oxide silicide (AlSiON) can be used.

Since aluminum oxynitride silicate has a relatively high thermal conductivity, by using it as a barrier film, the heat generated in the device can be efficiently radiated.

A resin having a light-transmitting property can be used for the stress relaxation film. Typically, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene, epoxy resin, or the like can be used. Note that resins other than those mentioned above can also be used.
Here, it is formed by applying heat-polymerizable polyimide and then baking it.

For silicon nitride, argon is introduced, the substrate temperature is kept at 150 ° C., and the film is formed at a sputtering pressure of about 0.4 Pa. Then, using silicon as a target, nitrogen and hydrogen were introduced in addition to argon to form a film. In the case of silicon nitride oxide, argon is introduced, the substrate temperature is kept at 150 ° C., and the film formation is performed at a sputtering pressure of about 0.4 Pa. Then, using silicon as a target, nitrogen, nitrogen dioxide, and hydrogen were introduced in addition to argon to form a film. Note that silicon oxide may be used as the target.

The thickness of the barrier film is preferably in the range of 50 nm to 3 μm. Here, silicon nitride was deposited to a film thickness of 1 μm.

The method of forming the barrier film is not limited to sputtering, and can be set by the practitioner as appropriate. For example, the film may be formed by using the LPCVD method, the plasma CVD method, or the like.

Further, the film thickness of the stress relaxation film is from 200 nm to
The range is preferably 2 μm. Here, polyimide was formed into a film having a thickness of 1 μm.

By applying the plastic substrate provided with the sealing film of this embodiment as the support 608 or the transfer member 610 in the sixth embodiment, or the base material 708 or the transfer member 710 in the seventh embodiment, an EL device can be obtained. Can be completely shielded from the atmosphere. As a result, the deterioration of the organic light emitting material due to oxidation can be suppressed almost completely, and E
The reliability of the L element can be significantly improved.

[Embodiment 9] A module having the EL element obtained in Embodiment 6 or Embodiment 7, a so-called EL.
The configuration of the module will be described with reference to the top view of FIG.
The transfer body 610 according to the seventh embodiment or the transfer body 710 according to the eighth embodiment corresponds to the film substrate 900.

FIG. 16A is a top view showing a module having an EL element, a so-called EL module, and FIG.
16B is a cross-sectional view taken along the line AA ′ in FIG. The pixel portion 902, the source side driver circuit 901, and the gate side driver circuit 903 are formed over a flexible film substrate 900 (for example, a plastic substrate or the like). These pixel portion and drive circuit can be obtained according to the above-described embodiment. Further, reference numeral 918 denotes a seal material, and 919 denotes a DLC film. The pixel portion and the driving circuit portion are covered with the seal material 918, and the seal material is covered with the protective film 919. Further, it is sealed with a cover material 920 using an adhesive material. The shape of the cover material 920 and the shape of the support are not particularly limited, and may be flat, curved, bendable, or film-shaped. In order to withstand deformation due to heat or external force, the cover material 920 is preferably made of the same material as the film substrate 900, for example, a plastic substrate, and is processed into the concave shape (depth 3 to 10 μm) shown in FIG. To use. Recesses that can be further processed to set the desiccant 921 (depth of 50-
200 μm) is desirable. Further, in the case of manufacturing an EL module by multi-chambering, the substrate and the cover material may be bonded together and then cut using a CO ₂ laser or the like so that the end faces are aligned.

Although not shown here, in order to prevent the background from being reflected by the reflection of the metal layer used (here, the cathode or the like), a circular polarizing plate including a retardation plate (λ / 4 plate) and a polarizing plate is used. A so-called circular polarization means may be provided on the substrate 900.

Reference numeral 908 denotes a wiring for transmitting a signal input to the source side driving circuit 901 and the gate side driving circuit 903, which is a video signal or a clock signal from an FPC (flexible printed circuit) 909 serving as an external input terminal. To receive. In addition, the light emitting device of this embodiment is
Digital drive may be used, analog drive may be used, and the video signal may be a digital signal or an analog signal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to this FPC. The light emitting device in this specification includes not only the light emitting device main body but also F
It also includes the state where a PC or PWB is attached. In addition, a complicated integrated circuit (memory, CPU, controller, D
A / A converter, etc.) can be formed, but it is difficult to manufacture with a small number of masks. Therefore, the memory,
I equipped with CPU, controller, D / A converter, etc.
C chip is a COG (chip on glass) type or TAB (ta
It is preferable to mount by a pe automated bonding) method or a wire bonding method.

Next, the sectional structure will be described with reference to FIG. An insulating film 910 is provided over a film substrate 900 with an adhesive layer interposed therebetween, and a pixel portion 902 and a gate side driver circuit 903 are formed above the insulating film 910.
The pixel portion 902 is formed by a plurality of pixels including a current control TFT 911 and a pixel electrode 912 electrically connected to its drain. According to any one of Embodiment Modes 1 to 4, after the layer to be peeled formed over the substrate is peeled off, the film substrate 900 is attached with an adhesive layer. The gate side drive circuit 903 is an n-channel TFT 91.
CMO combining 3 and p-channel TFT 914
It is formed using an S circuit.

These TFTs (911, 913, 914)
Is included in the n-channel TFT 20 of the first embodiment.
1. It may be manufactured according to the p-channel TFT 202 of the first embodiment.

The insulating film provided between the TFT and the EL element not only blocks diffusion of impurity ions such as alkali metal ions and alkaline earth metal ions, but also
A material that positively adsorbs impurity ions such as alkali metal ions and alkaline earth metal ions is preferable, and a material that can withstand the subsequent process temperature is suitable. As an example of a material satisfying these conditions, a silicon nitride film containing a large amount of fluorine can be given. The concentration of fluorine contained in the silicon nitride film is 1 × 10 ¹⁹ / cm ³ or more, and preferably the composition ratio of fluorine in the silicon nitride film is 1 to 5%. Fluorine in the silicon nitride film is combined with alkali metal ions, alkaline earth metal ions, etc. and adsorbed in the film. As another example, an antimony (Sb) compound that adsorbs an alkali metal ion, an alkaline earth metal ion, or the like,
An organic resin film containing fine particles of a tin (Sn) compound or an indium (In) compound, for example, an organic resin film containing fine particles of antimony pentoxide (Sb ₂ O ₅ .nH ₂ O) can also be mentioned. The organic resin film has an average particle size of 10
It contains fine particles of ˜20 nm and has a very high light transmittance. The antimony compound represented by the antimony pentoxide fine particles easily adsorbs impurity ions such as alkali metal ions and alkaline earth metal ions.

Also, between the active layer of the TFT and the EL element
Other materials for the insulating film to be provided include AlN_XO_YIndicated by
Layers may be used. Using a sputtering method, for example, nitriding
Using an aluminum (AlN) target, argon gas
Film in a mixed atmosphere of nitrogen gas and oxygen gas
And a nitride oxide layer containing aluminum (AlN _X
O_YThe layer indicated by 2) contains 2.5 atm% to 47.5 atm of nitrogen.
Membrane containing m%, blocking moisture and oxygen
In addition to the effect that can be achieved, it has high heat conductivity and heat dissipation effect,
Further, it has a feature of having a very high translucency.
In addition, impurities such as alkali metals and alkaline earth metals
Can be prevented from entering the active layer of the TFT.

In particular, a silicon nitride film formed by using an RF sputtering device and a silicon target is suitable as a passivation film for an interlayer insulating film made of an organic resin film. Since the silicon nitride film can suppress degassing of the organic resin film and also can block moisture and oxygen, the occurrence of defects called shrinkage of the organic compound layer can be suppressed.

The pixel electrode 912 functions as the anode of the EL element. In addition, a bank 915 is provided at both ends of the pixel electrode 912.
And the EL layer 916 and the cathode 917 of the light emitting element are formed on the pixel electrode 912. The bank 915 can be obtained by patterning an inorganic insulating film or an organic insulating film, and a curved surface having a curvature is formed at an upper end portion or a lower end portion of the bank 915 in order to improve coverage. It is preferable. For example, when positive photosensitive acrylic is used as the material of the bank 915, it is preferable that only the upper end portion of the bank 915 has a curved surface having a radius of curvature (0.2 μm to 3 μm). Further, as the bank 915, either a negative type which becomes insoluble in an etchant by photosensitive light or a positive type which becomes soluble in an etchant by light can be used.

As the EL layer 916, an EL layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transporting layer, or a charge injecting layer. For example, a low molecular weight organic EL material or a high molecular weight organic EL material may be used. Further, as the EL layer, a thin film formed of a light emitting material (singlet compound) that emits light (fluorescence) by singlet excitation or a thin film formed of a light emitting material (triplet compound) that emits light (phosphorescence) by triplet excitation can be used. Further, it is also possible to use an inorganic material such as silicon carbide for the charge transport layer and the charge injection layer. Known materials can be used as these organic EL materials and inorganic materials.

The cathode 917 also functions as a wiring common to all pixels, and is electrically connected to the FPC 909 via the connection wiring 908. Further, all elements included in the pixel portion 902 and the gate side driver circuit 903 are covered with the cathode 917, the sealant 918, and the protective film 919.

As the sealant 918, it is preferable to use a material that is as transparent or semitransparent to visible light as possible. Further, it is desirable that the sealing material 918 be a material that does not allow moisture and oxygen to pass therethrough as much as possible.

After the light emitting element is completely covered with the sealing material 918, at least DL as shown in FIG.
A protective film 919 made of a C film or the like is preferably provided on the surface (exposed surface) of the sealing material 918. Further, a protective film may be provided on the entire surface including the back surface of the substrate. Here, it is necessary to take care so that the protective film is not formed on the portion where the external input terminal (FPC) is provided. The protective film may not be formed using a mask, or the external input terminal portion may be covered with a tape such as a masking tape used in a CVD apparatus so that the protective film is not formed.

The light emitting element having the above structure is used as the sealing material 9
By enclosing the light emitting element with the protective film 18 and the protective film, the light emitting element can be completely shielded from the outside, and a substance such as moisture or oxygen that promotes deterioration due to oxidation of the EL layer can be prevented from entering from the outside. In addition, if a film having thermal conductivity (AlON film, AlN film, etc.) is used as the protective film, the heat generated when driven can be diffused. Therefore, a highly reliable light emitting device can be obtained.

Further, the pixel electrode may be used as a cathode and the EL layer and the anode may be laminated to emit light in the direction opposite to that shown in FIG. FIG. 17 shows an example thereof. Since the top view is the same, it is omitted.

The sectional structure shown in FIG. 17 will be described below. A plastic substrate is used as the film substrate 1000. Note that in accordance with any one of Embodiment Modes 1 to 4, after the peeled layer formed over the substrate is peeled off, the film substrate 1000 is attached with an adhesive layer. An insulating film 1010 is provided on a film substrate 1000, and a pixel portion 1002 and a gate side driver circuit 1003 are formed above the insulating film 1010. The pixel portion 1002 is electrically connected to a current control TFT 1011 and its drain. A plurality of pixels including the formed pixel electrode 1012.
The gate side drive circuit 1003 is an n-channel TFT.
It is formed by using a CMOS circuit in which 1013 and a p-channel TFT 1014 are combined.

The pixel electrode 1012 functions as the cathode of the light emitting element. In addition, the bank 1 is provided at both ends of the pixel electrode 1012.
015 is formed, and the EL layer 10 is formed on the pixel electrode 1012.
16 and the anode 1017 of the light emitting element are formed.

The anode 1017 also functions as a wiring common to all pixels, and the FPC 1009 is connected via the connection wiring 1008.
Electrically connected to. Further, all elements included in the pixel portion 1002 and the gate side driver circuit 1003 are covered with an anode 1017, a sealant 1018, and a protective film 1019 made of DLC or the like. Also, the cover material 1021
And the substrate 1000 were bonded together with an adhesive. In addition, a recess is provided in the cover material and a desiccant 1021 is placed therein.

As the sealing material 1018, it is preferable to use a material that is as transparent or semitransparent to visible light as possible. Further, it is desirable that the sealing material 1018 be a material that does not allow moisture and oxygen to permeate as much as possible.

Further, in FIG. 17, the pixel electrode is used as a cathode,
Since the EL layer and the anode are laminated, the light emitting direction is the direction of the arrow shown in FIG.

Although not shown here, a retardation plate (λ / 4 plate) is provided in order to prevent the background from being reflected by reflection of a metal layer used (here, a pixel electrode serving as a cathode, etc.).
A circularly polarizing means called a circularly polarizing plate composed of a polarizing plate or a polarizing plate may be provided on the cover material 1020.

In this embodiment, since a TFT having high electric characteristics and high reliability obtained in Embodiment 1 is used, a light emitting element having higher reliability than the conventional element can be formed. In addition, a high-performance electric appliance can be obtained by using a light-emitting device having such a light-emitting element as a display portion.

Note that this embodiment can be freely combined with Embodiment 1, Embodiment 7, Embodiment 8, or Embodiment 9.

[Embodiment 10] Various modules (active matrix type liquid crystal module, passive type liquid crystal module, active matrix type EL) are implemented by implementing the present invention.
Module, passive EL module, active matrix EC module) can be completed. That is, by implementing the present invention, all electronic devices incorporating them are completed.

Examples of such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, cell phones, electronic books, etc.). ) And the like. Examples of these are shown in FIGS. 18 and 19.

FIG. 18A shows a personal computer, which has a main body 2001, an image input section 2002, and a display section 20.
03, keyboard 2004 and the like.

FIG. 18B shows a video camera, which includes a main body 2101, a display portion 2102, a voice input portion 2103, operation switches 2104, a battery 2105, and an image receiving portion 210.
Including 6 etc.

FIG. 18C shows a mobile computer (mobile computer), which includes a main body 2201, a camera portion 2202, an image receiving portion 2203, operation switches 2204, a display portion 2205, and the like.

FIG. 18D shows a player that uses a recording medium (hereinafter referred to as a recording medium) in which a program is recorded, and has a main body 2401, a display section 2402, and a speaker section 240.
3, a recording medium 2404, operation switches 2405 and the like. This player uses a DVD (D
optical Versatile Disc), CD
It is possible to play music, watch movies, play games, and use the internet.

FIG. 18E shows a digital camera including a main body 2501, a display section 2502, an eyepiece section 2503, operation switches 2504, an image receiving section (not shown) and the like.

FIG. 19A shows a mobile phone, which is a main body 29.
01, voice output unit 2902, voice input unit 2903, display unit 2904, operation switch 2905, antenna 290
6. Image input unit (CCD, image sensor, etc.) 2907
Including etc.

[0285] FIG. 19B illustrates a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006.
Including etc.

FIG. 19C shows a display, which includes a main body 3101, a support base 3102, a display portion 3103 and the like.

By the way, the display shown in FIG. 19C has a small or medium size or a large size, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate whose one side is 1 m and perform multi-chambering for mass production.

As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to the manufacturing method of electronic devices in all fields. In addition, the electronic device of the present embodiment is
It can be realized by using any combination of nine.

[0289]

According to the present invention, since it is peeled from the substrate by physical means, the reliability of the device can be improved without damaging the semiconductor layer.

Further, according to the present invention, not only the peeled layer having a small area but also the peeled layer having a large area can be peeled over the entire surface with a good yield.

In addition, the present invention can be said to be a process suitable for mass production because it can be easily peeled off by physical means, for example, peeled off by a human hand. Further, when a manufacturing apparatus for peeling off the layer to be peeled off is manufactured at the time of mass production, a large manufacturing apparatus can be manufactured at low cost.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a first embodiment.

FIG. 2 is a diagram illustrating a second embodiment.

FIG. 3 is a diagram illustrating an experiment.

FIG. 4 is a diagram illustrating a third embodiment.

FIG. 5 is a diagram illustrating a fourth embodiment.

FIG. 6 is a diagram showing a manufacturing process of an active matrix substrate.

FIG. 7 is a diagram showing a manufacturing process of an active matrix substrate.

FIG. 8 is a diagram showing an active matrix substrate.

FIG. 9 is a diagram illustrating a second embodiment.

FIG. 10 is a diagram illustrating a third embodiment.

FIG. 11 is a diagram illustrating a fourth embodiment.

FIG. 12 is a diagram illustrating a fifth embodiment.

FIG. 13 is a diagram illustrating a sixth embodiment.

FIG. 14 is a diagram illustrating a seventh embodiment.

FIG. 15 is a diagram illustrating an eighth embodiment.

FIG. 16 is a diagram for explaining the ninth embodiment.

FIG. 17 is a diagram illustrating a ninth embodiment.

FIG. 18 illustrates examples of electronic devices.

FIG. 19 illustrates an example of an electronic device.

20A and 20B are a cross-sectional TEM photograph and a schematic view of a boundary that is partially separated.

FIG. 21 is a graph showing TXRF measurement results on the surface of a peeled silicon oxide film.

FIG. 22: TXR of W film surface formed on a quartz substrate
The graph which shows F measurement result. (reference)

FIG. 23 is a graph showing the results of TXRF measurement on the surface of a quartz substrate. (reference)

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05B 33/14 H01L 29/78 627G 626C (72) Inventor Shunpei Yamazaki 398 Hase, Atsugi, Kanagawa Co., Ltd. Semi-conductor Energy Laboratory F-term (reference) 2H088 FA11 FA23 HA06 3K007 AB18 BA07 CA06 DB03 FA00 GA00 5F110 AA28 BB02 BB04 CC02 DD01 DD12 DD13 DD15 DD17 EE01 EE02 EE03 EE04 EE06 EE09 GG32 GG32 GG32 GG03 GG02 GG GGFF GG GG47 GG51 GG58 HJ01 HJ04 HJ12 HJ13 HJ23 HL03 HL04 HL06 HL07 HM13 HM15 NN03 NN04 NN22 NN23 NN24 NN27 NN72 NN73 NN78 PP01 PP02 PP03 PP04 PP05 PP13 PP29 PP34 PP35 QQQ QQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQQ

Claims (30)

[Claims] 1. A peeling method for peeling a layer to be peeled from a substrate, wherein a nitride layer is provided on the substrate, and the substrate is provided with the nitride layer and is in contact with at least the nitride layer. After forming a layer to be peeled composed of a laminate including an oxide layer, the layer to be peeled is peeled from the substrate provided with the nitride layer at a physical means in or at the interface of the oxide layer. Peeling method. 2. A peeling method for peeling a layer to be peeled from a substrate, wherein a nitride layer is provided on the substrate, and at least the nitride layer is in contact with the substrate provided with the nitride layer. Forming a layer to be peeled composed of a laminate including an oxide layer,
After adhering a support to the layer to be peeled, peeling the layer to be peeled adhered to the support from the substrate provided with the nitride layer at a physical means in or at the interface of the oxide layer. A peeling method characterized by. 3. The peeling method according to claim 2, wherein a heat treatment or a treatment of irradiating a laser beam is performed before the support is bonded. 4. A peeling method for peeling a layer to be peeled from a substrate, wherein a metal layer is provided on the substrate, and an oxide layer in contact with at least the metal layer is provided on the substrate provided with the metal layer. After forming a layer to be peeled consisting of a laminate containing the layer to be peeled, the layer to be peeled is peeled from the substrate provided with the metal layer by physical means in the layer of the oxide layer or at the interface. . 5. A peeling method for peeling a layer to be peeled from a substrate, wherein a metal layer is provided on the substrate, and an oxide layer in contact with at least the metal layer is provided on the substrate provided with the metal layer. After forming a layer to be peeled consisting of a laminated layer containing a substrate and adhering a support to the layer to be peeled, the layer to be peeled adhered to the support is oxidized by a physical means from a substrate provided with the metal layer. A peeling method, which comprises peeling within a physical layer or at an interface. 6. The peeling method according to claim 4 or 5, wherein the metal layer is a nitride. 7. The metal layer according to claim 4, wherein the metal layer is Ti, Al, Ta, W, Mo, Cu or C.
r, Nd, Fe, Ni, Co, Zr, Zn, Ru, R
A peeling method comprising a single layer made of an element selected from h, Pd, Os, Ir, and Pt, or an alloy material or a compound material containing the above element as a main component, or a laminated layer of a metal or a mixture thereof. . 8. The peeling method according to claim 1, wherein the oxide layer is a single layer made of a silicon oxide material or a metal oxide material, or a stacked layer thereof. 9. The peeling method according to claim 1, wherein a heating treatment or a laser light irradiation treatment is performed before the peeling by the physical means. 10. The method according to any one of claims 5 to 9,
A peeling method, which comprises performing a heat treatment or a treatment of irradiating a laser beam before adhering the support. 11. A step of forming a nitride layer on a substrate, a step of forming an oxide layer on the nitride layer, a step of forming an insulating layer on the oxide layer, and a step of forming the insulating layer on the insulating layer. A step of forming an element on the element, a step of adhering a support to the element, and then peeling the support from the substrate in a layer of the oxide layer or at an interface by physical means, the insulating layer or the oxide. A step of adhering a transfer body to the layer, and sandwiching the element between the support body and the transfer body. 12. A step of forming a nitride layer on a substrate, a step of forming a granular oxide on the nitride layer, a step of forming an oxide layer covering the oxide, and the oxide. A step of forming an insulating layer on the layer, a step of forming an element on the insulating layer, and a step of adhering a support to the element and then applying the support from the substrate to the inside of the oxide layer by physical means. Or a step of peeling at an interface, and a step of adhering a transfer body to the insulating layer or the oxide layer and sandwiching the element between the support body and the transfer body. Manufacturing method. 13. A step of forming a layer containing a metal material on a substrate, a step of forming an oxide layer on the layer containing the metal material, and a step of forming an insulating layer on the oxide layer. A step of forming an element on the insulating layer, a step of adhering a support to the element, and then peeling the support from the substrate at a layer or an interface of the oxide layer by physical means, A step of adhering a transfer body to the insulating layer or the oxide layer, and sandwiching the element between the support and the transfer body. 14. A step of forming a layer containing a metal material on a substrate, a step of forming a granular oxide on the layer containing the metal material, and forming an oxide layer covering the oxide. A step of forming an insulating layer on the oxide layer,
A step of forming an element on the insulating layer, a step of adhering a support to the element, and then peeling the support from the substrate at a layer or interface of the oxide layer by a physical means, and the insulating layer Alternatively, a transfer member is adhered to the oxide layer,
And a step of sandwiching the element between the support and the transfer body. 15. The method for manufacturing a semiconductor device according to claim 11, wherein the support is a film substrate or a base material. 16. The method for manufacturing a semiconductor device according to claim 11, wherein the transfer body is a film substrate or a base material. 17. The method according to claim 15 or 16,
The second insulating film has a first insulating film, a second insulating film, and a third insulating film on the film substrate, and is sandwiched between the first insulating film and the third insulating film. A method for manufacturing a semiconductor device, wherein the insulating film has a smaller film stress than those of the first insulating film and the third insulating film. 18. The method for manufacturing a semiconductor device according to claim 11, wherein a heat treatment or a laser light irradiation treatment is performed before the support is bonded. 19. The method for manufacturing a semiconductor device according to claim 11, wherein a heat treatment or a laser light irradiation treatment is performed before peeling by the physical means. 20. The device according to claim 11, wherein the element is a thin film transistor having a semiconductor layer as an active layer, and the step of forming the semiconductor layer includes heating a semiconductor layer having an amorphous structure. A method for manufacturing a semiconductor device, which comprises crystallizing a semiconductor layer having a crystal structure by a treatment or a treatment of irradiating a laser beam. 21. The support according to claim 11, wherein the support is a counter substrate, the element has a pixel electrode, and the pixel electrode and the counter substrate are provided between the pixel electrode and the counter substrate. A method for manufacturing a semiconductor device, which is filled with a liquid crystal material. 22. The method for manufacturing a semiconductor device according to claim 11, wherein the support is a sealing material, and the element is a light emitting element. 23. A step of forming a layer containing a metal material on a substrate, a step of forming an oxide layer on the layer containing the metal material, and a step of forming an insulating layer on the oxide layer. And a step of forming an element on the insulating layer, a step of peeling from the substrate by a physical means at the inside of the oxide layer or at an interface, and a first transfer member bonded to the insulating layer or the oxide layer. And a step of adhering a second transfer body to the element and sandwiching the element between the first transfer body and the second transfer body. . 24. The method for manufacturing a semiconductor device according to claim 13, wherein the layer containing the metal material is a nitride. 25. The metal material according to claim 13, wherein the metal material is Ti, Al, Ta, W, Mo or C.
u, Cr, Nd, Fe, Ni, Co, Zr, Zn, R
an element selected from u, Rh, Pd, Os, Ir and Pt,
Alternatively, a method for manufacturing a semiconductor device, which is a single layer formed of an alloy material or a compound material containing the above element as a main component, or a stacked layer of a metal or a mixture thereof. 26. A step of forming a nitride layer on a substrate, a step of forming an oxide layer on the nitride layer, a step of forming an insulating layer on the oxide layer, and a step of forming the insulating layer on the insulating layer. A step of forming an element on the substrate, a step of peeling from the substrate by a physical means in the layer or the interface of the oxide layer, a step of adhering a first transfer body to the insulating layer or the oxide layer, and the element A step of adhering a second transfer body to the substrate, and sandwiching the element between the first transfer body and the second transfer body. 27. A method for manufacturing a semiconductor device according to claim 23, wherein a heat treatment or a laser light irradiation treatment is performed before the peeling by the physical means. 28. The method for manufacturing a semiconductor device according to claim 11, wherein the oxide layer is a single layer formed of a silicon oxide material or a metal oxide material, or a stacked layer thereof. . 29. A semiconductor device, wherein the layer to be peeled, which is adhered to the support with an adhesive, has a silicon oxide film, and a small amount of metal material is present between the silicon oxide film and the adhesive. 30. The metal material according to claim 29,
W, Ti, Al, Ta, Mo, Cu, Cr, Nd, F
e, Ni, Co, Zr, Zn, Ru, Rh, Pd, O
A semiconductor device comprising an element selected from s, Ir, and Pt, or an alloy material or a compound material containing the above element as a main component.