KR20150114226A - Light emitting device package, backlight unit, lighting device and its manufacturing method - Google Patents

Abstract

The present invention relates to a light emitting device package used for display or lighting, a backlight unit, a lighting device and its manufacturing method. The light emitting device package may include: a substrate core layer made of a thermal conductivity material; a substrate insulating layer which surrounds the substrate core layer and is made of an insulating mixture where binder and heat radiating powder are mixed; an upper electrode layer which is formed on the upper side of the substrate insulating layer and comprises a first electrode layer and a second insulating layer with an electrode separation space; a lower electrode layer formed on the lower side of the substrate insulating layer; and a lateral electrode layer which is formed on the lateral side of the substrate insulating layer and electrically connects the upper electrode layer and the lower electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package, a backlight unit, a lighting device, and a method of manufacturing a light emitting device package. More particularly, the present invention relates to a light emitting device package and a method of manufacturing the light emitting device package.

A light emitting diode (LED) is a kind of semiconductor device that can emit light of various colors by forming a light emitting source through the formation of a PN diode of a compound semiconductor. Such a light emitting device has a long lifetime, can be reduced in size and weight, and can be driven at a low voltage. In addition, these LEDs are resistant to shock and vibration, do not require preheating time and complicated driving, can be packaged after being mounted on a substrate or lead frame in various forms, so that they can be modularized for various purposes and used as a backlight unit A lighting device, and the like.

However, the conventional light emitting device package uses a metal lead frame, a ceramic substrate, or a metal substrate. The manufacturing process and process are complicated and troublesome, such as using a large-capacity press for cutting or cutting a metal mold or a metal material , It is not easy to insulate the metal plate and it is difficult to form a pattern on the metal plate. As a result, the cost of the package is increased and the productivity and the formability are greatly deteriorated.

For example, in the case of using a conventional lead frame or metal substrate of a metal material, it is difficult to form the lead frame by tapping the metal mold or to change it easily once the metal mold is developed, There is a problem that the terminals are easily peeled off from the high temperature due to the difference in thermal expansion coefficient between the resin material of the lead frame and the metal material of the lead frame.

On the other hand, when a conventional ceramic substrate is used, metal interconnects of three-dimensionally very complicated shapes are required inside. In order to accomplish this, it is necessary to plastic-process the ceramic material, And the like.

The present invention has been made to solve the above problems and it is an object of the present invention to provide a high heat dissipation package using a substrate core layer made of a metallic material, The process of trimming, cutting, punching, sheet bonding, pattern forming, molding, etc. using the material is very easy, using PCB equipment and so on. A light emitting device package, a backlight unit, a lighting device, and a manufacturing method of a light emitting device package that can greatly improve productivity and greatly improve moldability such as multi-chip bonding, complicated pattern formation, and additional process . However, these problems are exemplary and do not limit the scope of the present invention.

According to an aspect of the present invention, there is provided a light emitting device package including: a substrate core layer made of a thermally conductive material; A substrate insulating layer formed in a shape surrounding the substrate core layer and made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; An upper electrode layer formed on the upper surface of the substrate insulation layer and including a first electrode layer and a second electrode layer having an electrode separation space; A lower electrode layer formed on a lower surface of the substrate insulating layer; And a side electrode layer formed on a side surface of the substrate insulating layer and electrically connecting the top electrode layer and the bottom electrode layer.

According to an aspect of the present invention, the binder includes an epoxy-based resin, and the heat-dissipating powder includes at least one selected from ceramic powder, metal powder, metal powder coated with an insulator, Lt; / RTI >

According to an aspect of the present invention, the side electrode layer may be a plating layer plated along the inner wall of the penetration window formed in the substrate insulation layer.

The light emitting device package according to the present invention may further include: a light emitting element mounted on the top electrode layer; A bonding medium disposed between the top electrode layer and the light emitting device; And a lower heat dissipation layer disposed on the lower surface of the substrate insulation layer so as to be electrically insulated from the lower electrode layer, wherein the lower surface heat dissipation layer includes a lower heat dissipation layer, The recessed groove portion may be thermally connected to the substrate core layer by pressing the recessed groove portion formed through a part of the recessed groove portion.

According to an aspect of the present invention, there is provided a backlight unit including: a substrate core layer made of a thermally conductive material; A substrate insulating layer formed in a shape surrounding the substrate core layer and made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; An upper electrode layer formed on the upper surface of the substrate insulation layer and including a first electrode layer and a second electrode layer having an electrode separation space; A lower electrode layer formed on a lower surface of the substrate insulating layer; A side electrode layer formed on a side surface of the substrate insulating layer and electrically connecting the top electrode layer and the bottom electrode layer; And a light guide plate installed in an optical path of the light emitting device.

According to an aspect of the present invention, there is provided an illumination device including: a substrate core layer made of a thermally conductive material; A substrate insulating layer formed in a shape surrounding the substrate core layer and made of an insulating mixed material in which a binder and a heat dissipating powder are mixed; An upper electrode layer formed on the upper surface of the substrate insulation layer and including a first electrode layer and a second electrode layer having an electrode separation space; A lower electrode layer formed on a lower surface of the substrate insulating layer; And a side electrode layer formed on a side surface of the substrate insulating layer and electrically connecting the top electrode layer and the bottom electrode layer.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, the method comprising the steps of: preparing a substrate core layer substrate made of a thermally conductive material and having a receiving space; Wherein a substrate insulating layer made of an insulating mixed material in which a binder and a heat dissipating powder are mixed is provided on the top and bottom surfaces of the substrate core layer original plate and the top surface electrode layer sheet is attached to the top surface of the substrate insulating layer, Attaching a lower surface electrode layer sheet to the lower electrode sheet; Pressing the upper surface electrode layer sheet and the lower surface electrode layer sheet in a vacuum state at a high temperature and a high pressure using a hot press so that the substrate insulation layer is filled in the accommodating space; Boring a penetration window having a width smaller than the width of the accommodation space in the substrate insulation layer filled in the accommodation space; Plating a plating layer so that a side electrode layer is formed on an inner wall of the penetrating window; Attaching a photosensitive mask film to the top electrode layer sheet or the bottom electrode sheet so that an electrode separation space or a pattern is formed on the top electrode layer sheet or the bottom electrode sheet, And cutting the etched upper electrode layer sheet, the lower electrode layer sheet, the substrate core layer original plate, and the substrate insulating layer into a unit package.

The method of manufacturing a light emitting device package according to an aspect of the present invention is characterized in that before the step of cutting the etched upper electrode layer sheet, the lower electrode layer sheet, the substrate core layer original plate and the substrate insulating layer into unit packages, Further comprising the step of plating an additional plating layer on a surface selected from any one or more of the top electrode layer sheet, the bottom electrode layer sheet, the side electrode layer, the substrate core layer original plate, the substrate insulating layer, and combinations thereof have.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package, comprising the steps of: cutting the upper surface electrode layer sheet, the lower electrode layer sheet, the substrate core layer original plate, Forming a bonding medium on the top surface electrode layer sheet; And placing the light emitting device on the bonding medium.

According to an aspect of the present invention, a photosensitive mask film is attached to the upper surface electrode layer sheet or the lower surface electrode layer sheet so that an electrode separation space or a pattern is formed on the upper surface electrode layer sheet or the lower surface electrode layer sheet, A lower surface heat dissipation layer is formed on the lower surface electrode layer sheet so as to be electrically insulated from the lower surface electrode layer and a lower surface heat dissipation layer is formed on the lower surface heat dissipation layer through a portion of the substrate core layer Forming depressed trenches; And pressing the upper electrode layer sheet with a press so that the substrate core layer is thermally connected to the lower heat dissipation layer.

According to some embodiments of the present invention as described above, the substrate core layer made of the metal material and the mixed material of the binder and the heat-dissipating powder are used to provide excellent heat dissipation, easy manufacturing process, It is possible to remarkably improve the moldability such as the multi-flip chip bonding, the complex pattern formation, and the additional process, thereby greatly reducing the production time and the production cost and producing the high quality product. Of course, the scope of the present invention is not limited by these effects.

1 is a perspective view illustrating a light emitting device package according to some embodiments of the present invention.
2 is a cross-sectional view of a light emitting device package of FIG. 1 taken along line II-II.
FIGS. 3 to 13 are cross-sectional views illustrating steps of manufacturing the light emitting device package of FIG. 1. FIG.
14 is a cross-sectional view illustrating a backlight unit according to some embodiments of the present invention.
15 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.
16 is a flowchart showing a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified in various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

It is to be understood that throughout the specification, when an element such as a film, region or substrate is referred to as being "on", "connected to", "laminated" or "coupled to" another element, It will be appreciated that elements may be directly "on", "connected", "laminated" or "coupled" to another element, or there may be other elements intervening therebetween. On the other hand, when one element is referred to as being "directly on", "directly connected", or "directly coupled" to another element, it is interpreted that there are no other components intervening therebetween do. Like numbers refer to like elements. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Also, relative terms such as "top" or "above" and "under" or "below" can be used herein to describe the relationship of certain elements to other elements as illustrated in the Figures. Relative terms are intended to include different orientations of the device in addition to those depicted in the Figures. For example, if the element is inverted in the figures, the elements depicted as being on the upper surface of the other elements will have a direction on the lower surface of the other elements. Thus, the example "top" may include both "under" and "top" directions depending on the particular orientation of the figure. If the elements are oriented in different directions (rotated 90 degrees with respect to the other direction), the relative descriptions used herein can be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

1 is a perspective view illustrating a light emitting device package 100 according to some embodiments of the present invention. 2 is a cross-sectional view showing a II-II cross-section of the light emitting device package 100 of FIG.

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes a substrate 10, a light emitting device 20, a top electrode layer 30, And a lower electrode layer 50 and a side electrode layer 40. [

Here, for example, the substrate 10 has a relatively thick thickness of 500 micrometers (占 퐉) or more, and includes a substrate core layer 10-1 and a substrate insulation layer 10-1 surrounding the substrate core layer 10-1 Layer 10-2.

More specifically, for example, the substrate core layer 10-1 is made of a thermally conductive material, and a thermally conductive material having various types of excellent thermal conductivity may be applied. For example, the substrate core layer 10-1 may be made of copper, aluminum, or a metal material such as gold, silver, or iron having a high thermal conductivity.

The substrate insulating layer 10-2 may be formed of an insulating material mixed with the binder 11 and the heat dissipating powder 12 so as to surround the substrate core layer 10-1 .

Here, for example, the binder 11 includes an epoxy-based resin, and the heat-dissipating powder 12 includes at least a ceramic powder 12-1, a metal powder 12-2, and an insulator 12-3 Coated metal powder (12-4), and combinations thereof.

The substrate 10 can support the top electrode layer 30, the bottom electrode layer 50, and the side electrode layer 40 as well as the light emitting device 20 and is electrically insulated from the top electrode layer 30 And can be made of a mixed material having suitable mechanical strength for this purpose.

More specifically, for example, the substrate insulating layer 10-2 of the substrate 10 may be formed of a resin, a glass, a silicone resin composition, a modified epoxy resin composition, a modified silicone resin composition, a polyimide resin (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin, EMC (Epoxy Mold Compound) ), A metal powder 12-4 having excellent thermal conductivity and coated with various insulators 12-3 such as an oxide layer, that is, a metal such as aluminum, Copper, zinc, tin, lead, gold, silver, or the like.

Here, the insulator 12-3 coated on the metal powder 12-4 is an insulating material that entirely surrounds the metal powder 12-4. For example, the insulator 12-3 may be formed by oxidizing the metal powder 12-4 . When the metal powder 12-4 includes aluminum in the metal, the insulator 12-3 may include alumina, which is aluminum oxide. Although various methods are available for such an oxidation method, an aluminum component may be oxidized on the surface of the metal powder 12-4 by using an anodizing method to form the insulator 12-3.

That is, the metal powder 12-4 may include an aluminum component, and the insulator 12-3 may be an aluminum oxide layer. In addition, the insulator 12-3 may be formed of silicon oxide, silicon nitride, or the like.

The substrate insulating layer 10-2 may be an insulating substrate of a flexible printed circuit board (PCB), which is a mixture of the binder 11 and the heat dissipating powder 12, And may be an insulating substrate of a flexible printed circuit board (FPCB).

Meanwhile, the binder 11 of the substrate insulating layer 10-2 may be a mixed material mixed with thermoplastic, thermosetting, or volatile materials that can be partially or wholly cured after being mixed with the heat dissipating powder 12 have.

Accordingly, since the heat dissipation performance of the substrate core layer 10-1 made of a metal material is improved and the heat dissipation powder 12 of the substrate insulation layer 10-2 is used, Cutting, perforating, sheet bonding, pattern formation, molding, and the like using the substrate 10 using the mixed material of the binder 11 and the heat radiation powder 12, It is very similar to conventional PCB manufacturing process, and it is very economical and can greatly improve the productivity.

The light emitting device 20 is mounted on the upper surface electrode layer 30 and includes a flip chip LED having a first pad P1 and a second pad P2 Diode).

The light emitting device 20 may be made of a semiconductor, as shown in FIG. For example, LEDs of blue, green, red, and yellow light emission, LEDs of ultraviolet light emission, and LEDs of infrared light emission, which are made of a nitride semiconductor, can be applied. The nitride semiconductor is represented by a general formula Al _x Ga _y In _z N (0? X? 1, 0? Y? 1, 0? Z? 1, x + y + z = 1).

The light emitting device 20 can be formed by epitaxially growing nitride semiconductors such as InN, AlN, InGaN, AlGaN, and InGaAlN on a sapphire substrate for growth or a silicon carbide substrate by a vapor phase growth method such as MOCVD To grow. The light emitting device 20 may be formed using semiconductors such as ZnO, ZnS, ZnSe, SiC, GaP, GaAlAs, and AlInGaP in addition to the nitride semiconductor. These semiconductors can be stacked in the order of an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer. The light emitting layer (active layer) may be a laminated semiconductor having a multiple quantum well structure or a single quantum well structure or a laminated semiconductor having a double hetero structure. In addition, the light emitting device 20 can be selected to have an arbitrary wavelength depending on the application such as display use and illumination use.

Here, as the growth substrate, an insulating, conductive or semiconductor substrate may be used if necessary. For example, the growth substrate may be sapphire, SiC, Si, MgAl 2 O 4, MgO, LiAlO 2, LiGaO 2, GaN. A GaN substrate, which is a homogeneous substrate, is preferable for epitaxial growth of a GaN material, but a GaN substrate has a problem of high production cost due to its difficulty in manufacturing.

Sapphire and silicon carbide (SiC) substrates are mainly used as the different substrates. Sapphire substrates are more utilized than expensive silicon carbide substrates. When using a heterogeneous substrate, defects such as dislocation are increased due to the difference in lattice constant between the substrate material and the thin film material. Also, due to the difference in the thermal expansion coefficient between the substrate material and the thin film material, warping occurs at a temperature change, and warping causes a crack in the thin film. This problem may be reduced by using a buffer layer between the substrate and the GaN-based light emitting laminate.

In addition, the substrate for growth may be completely or partially removed or patterned in order to improve the optical or electrical characteristics of the LED chip before or after the growth of the LED structure.

For example, in the case of a sapphire substrate, the substrate can be separated by irradiating the laser to the interface with the semiconductor layer through the substrate, and the silicon or silicon carbide substrate can be removed by a method such as polishing / etching.

Another supporting substrate may be used for removing the growth substrate. In order to improve the light efficiency of the LED chip on the opposite side of the growth substrate, the supporting substrate may be bonded using a reflective metal, As shown in FIG.

In addition, patterning of the growth substrate improves the light extraction efficiency by forming irregularities or slopes before or after the LED structure growth on the main surface (front surface or both sides) or side surfaces of the substrate. The size of the pattern can be selected from the range of 5 nm to 500 μm and it is possible to make a structure for improving the light extraction efficiency with a rule or an irregular pattern. Various shapes such as a shape, a column, a mountain, a hemisphere, and a polygon can be adopted.

In the case of the sapphire substrate, the crystals having a hexagonal-rhombo-cubic (Hexa-Rhombo R3c) symmetry have lattice constants of 13.001 and 4.758 in the c-axis direction and the a-axis direction, respectively, and have C plane, A plane and R plane. In this case, the C-plane is relatively easy to grow the nitride film, and is stable at high temperature, and thus is mainly used as a substrate for nitride growth.

Another material of the growth substrate is a Si substrate, which is more suitable for large-scale curing and relatively low in cost, so that mass productivity can be improved.

In addition, since the silicon (Si) substrate absorbs light generated from the GaN-based semiconductor and the external quantum efficiency of the light emitting device is lowered, the substrate may be removed as necessary, and Si, Ge, SiAl, A support substrate such as a metal substrate is further formed and used.

When a GaN thin film is grown on a different substrate such as the Si substrate, the dislocation density increases due to the lattice constant mismatch between the substrate material and the thin film material, and cracks and warpage Lt; / RTI > The buffer layer may be disposed between the growth substrate and the light emitting stack for the purpose of preventing dislocation and cracking of the light emitting stack. The buffer layer also functions to reduce the scattering of the wavelength of the wafer by adjusting the degree of warping of the substrate during the growth of the active layer.

Herein, the buffer layer may be made of Al _x In _y Ga _1-xy N (0? X? 1, 0? _Y? 1, x + y? 1), in particular GaN, AlN, AlGaN, InGaN or InGaNAlN. Materials such as ZrB2, HfB2, ZrN, HfN and TiN can also be used as needed. Further, a plurality of layers may be combined, or the composition may be gradually changed.

Although not shown, the light emitting device 20 may be a flip chip type having a signal transmission medium such as a pump or a solder in addition to the pads P1 and P2. In addition, a bonding wire may be applied to the terminal, A light emitting element to which a bonding wire is applied only to the first terminal or a second terminal in part, or a horizontal or vertical type light emitting element can be applied.

In addition, the first pad P1 and the second pad P2 may be formed in various shapes other than the rectangular shape shown in FIG. 1, and may have a finger structure having a plurality of fingers on one arm have.

1, one or more light emitting devices 20 may be provided on the substrate 10, and a plurality of light emitting devices 20 may be provided on the substrate 10, although not shown in the drawings.

1 and 2, the top electrode layer 30 is formed on the top surface of the substrate insulation layer 10-2, and includes a first electrode layer 31 having an electrode separation space and a second electrode layer And an electrode layer 32 made of a conductive material.

More specifically, for example, the first electrode layer 31 and the second electrode layer 32 may be formed on the upper surface of the substrate insulating layer 10-2 so as to face the light emitting device 20, An electrode separation space may be formed between the first electrode layer 31 and the second electrode layer 32.

For example, as shown in FIG. 1, on the upper surface of the substrate insulating layer 10-2, the first electrode layer 31 and the second electrode layer 32 may be formed.

Also, as shown in FIGS. 1 and 2, the lower electrode layer 50 may be an electrode layer of a conductive material formed on the lower surface of the substrate insulating layer 10-2. Although not shown, the bottom electrode layer 50 may be formed to correspond to a shape of an external power connection terminal or a module substrate so as to be electrically connected to an external power connection terminal or a module substrate.

The top electrode layer 30 and the bottom electrode layer 50 may be formed of a conductive material such as copper (Cu), gold (Au), silver (Ag), platinum (Pt), aluminum (Al) A sheet attaching method in which a sheet having a predetermined thickness is attached to the upper surface and the lower surface of the substrate 10 and is pressed at a high temperature and a high pressure by using a hot press,

Therefore, the manufacturing process is very easy, such as using a hot press, which is a PCB device, similar to the conventional PCB manufacturing process, and a comparatively low-cost mixed material is used as the substrate 10 to reduce the package price, .

In addition, the top electrode layer 30 and the bottom electrode layer 50 may be formed using various processes such as various deposition processes, plating processes such as pulse plating and direct current plating, soldering processes, adhesion processes, and spray processes.

1 and 2, the side surface electrode layer 40 is formed on the side surface of the substrate insulation layer 10-2 and the upper surface electrode layer 30 and the lower surface electrode layer 50 And may be a plated layer plated along the inner wall of the penetrating window W formed in the substrate 10.

As shown in FIGS. 1 and 2, the plating method can be performed by electroless plating or electrolytic plating only on the inner wall of the through window W, or by plating the substrate insulating layer 10-2 ) Can be partially or wholly electrolessly or electrolytically plated.

The side electrode layer 40 may be formed by plating a conductive paste such as a solder paste on the side surface of the substrate 10, by super-precise transfer, by ultra-precision stamping, In addition, various printing methods such as an inkjet printing method, a stencil printing method, and a squeeze printing method can be used.

As described above, the top electrode layer 30, the bottom electrode layer 50, and the side electrode layer 40 are formed of copper (Cu), gold (Au), silver (Ag), platinum (Pt) Al, solder, nickel, or the like, and may be formed using various processes such as plating with various sheets, vapor deposition, pulse plating or direct current plating, soldering, bonding, spraying .

1 and 2, a light emitting device package 100 according to some embodiments of the present invention includes an additional plating layer 60, a bonding medium 70, a lower heat dissipation layer 80, And a filler 90 or a phosphor.

1 and 2, the additional plating layer 60 is formed on the top electrode layer 30 and may include, for example, the top electrode layer 30 and the bottom electrode layer 30, 50 and the side surface electrode layer 40 may be additionally provided on the outer surface of the top surface electrode layer 30 and the bottom electrode layer 50 and the side surface electrode layer 40 so as to be physically or electrically connected to each other .

In addition, the additional plating layer 60 may be a reflective layer formed only on the top electrode layer 30. Although not shown, the reflective layer may be formed of a reflective plating layer of silver (Ag), platinum (Pt), aluminum (Al), nickel, or the like having high reflectivity. Therefore, the physical and electrical characteristics of the package can be improved by using the additional plating layer 60, and the light efficiency of the package can be improved.

In addition to the plating method, the reflective layer may be formed by using a silicone resin composition, a modified epoxy resin composition such as a silicone modified epoxy resin, a modified silicone resin composition such as an epoxy modified silicone resin, a polyimide resin composition, a modified polyimide resin composition, PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenol resin, acrylic resin, PBT resin and the like.

It is also possible to add a light reflecting material such as titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, chromium, have.

In addition, although not shown, a separate sealing material made of various resin materials described above may be additionally molded on the substrate 10.

Here, the light emitting device 20 may be mounted on the top electrode layer 30 or the additional plating layer 60 or the bonding medium 70 described above.

1 and 2, the bonding medium 70 is disposed between the top electrode layer 30 and the light emitting device 20, And the second pad P2 may be electrically connected to the first electrode 31 and the second electrode 32 of the top electrode layer 30, respectively.

The bonding medium 70 may be AuSn, Sn, SAC (Sn-Ag-Cu) or the like which is a general eutectic bonding material and may be applied to the top electrode layer 30 Or solder paste or solder paste dispensed.

Therefore, the physical and electrical contact between the light emitting device 20 and the top electrode layer 30 or the additional plating layer 60 can be improved by using the bonding medium 70.

In addition, the bonding medium 70 may be a conductive bonding medium that is in a flowable state during bonding such as a lead layer, a copper layer, an aluminum layer, and a solder layer, or any hardenable material that is cured upon cooling or heating or drying .

1 and 2, the lower surface heat dissipation layer 80 is provided on a lower surface of the substrate 10, and when the lower surface electrode layer 50 is formed, The lower electrode layer 50 may be electrically insulated from the lower electrode layer 50 or may be electrically connected to the electrode of any one of the polarities of the lower electrode layer 50.

Therefore, although not shown, the external heat path may be thermally connected to the heat dissipation layer 80 to easily dissipate the heat of the substrate 10 to the outside.

More specifically, for example, as shown in FIG. 10, the lower heat-dissipating layer 80 is formed to extend from the lower heat-dissipating layer 80 to a lower portion of the substrate insulating layer 10-2, And may be thermally connected to the substrate core layer 10-1 by a press to press the recessed groove portion R formed through a part of the layer 10-1.

The filler 90 may guide the path of light generated in the light emitting device 20 and may include a modified epoxy resin composition such as glass, an epoxy resin composition, a silicone resin composition, and a silicone modified epoxy resin, (PPA), a polycarbonate resin, a polyphenylene sulfide (PPS), a liquid crystal polymer (LCP), an ABS resin, a phenol resin , Acrylic resin, PBT resin, and the like can be applied.

In addition, the filling material 90 may include a phosphor. The phosphor may be formed in the same shape as the lens 90 so as to replace the function of the lens 90 or may be contained in the lens 90 or may be provided around the light emitting element 20 Is possible.

Such a phosphor may have the following composition formula and color.

Oxide system: yellow and green Y3Al5O12: Ce, Tb3Al5O12: Ce, Lu3Al5O12: Ce

(Ba, Sr) 2SiO4: Eu, yellow and orange (Ba, Sr) 3SiO5: Ce

Eu, Sr2Si5N8: Eu, SrSiAl4N7: Eu, Eu3O3: Eu, Eu3O3: Eu,

The composition of the phosphor should basically correspond to stoichiometry, and each element may be substituted with another element in each group on the periodic table. For example, Sr can be substituted with Ba, Ca, Mg, etc. of the alkaline earth (II) group, and Y can be replaced with lanthanum series of Tb, Lu, Sc, Gd and the like. Ce, Tb, Pr, Er, Yb and the like, and the active agent may be used alone or as a negative active agent for the characteristic modification.

As a substitute for the phosphor, materials such as a quantum dot may be used. Alternatively, a fluorescent material and QD may be mixed with the LED or used alone.

QD can be composed of a core (3 to 10 nm) such as CdSe and InP, a shell (0.5 to 2 nm) such as ZnS and ZnSe, and a ligand for stabilizing the core and the shell. Can be implemented.

In addition, the coating method of the fluorescent material or the quantum dot may include at least one of a method of being applied to an LED chip or a light emitting device, a method of covering the material in a film form, a method of attaching a sheet form such as a film or a ceramic fluorescent material .

Dispensing and spray coating are common methods of spraying, and dispensing includes mechanical methods such as pneumatic method and screw, linear type. It is also possible to control the amount of dyeing through a small amount of jetting by means of a jetting method and control the color coordinates thereof. The method of collectively applying the phosphor on the wafer level or the light emitting device substrate by the spray method can easily control productivity and thickness.

The method of directly covering the light emitting device 20 or the LED chip in a film form can be applied by a method of electrophoresis, screen printing or phosphor molding, and the method may have a difference depending on necessity of application of the side of the LED chip.

In order to control the efficiency of the long-wavelength light-emitting phosphor that reabsers light emitted from a short wavelength among two or more kinds of phosphors having different emission wavelengths, two or more kinds of phosphor layers having different emission wavelengths can be distinguished. A DBR (ODR) layer may be included between each layer to minimize absorption and interference.

In order to form a uniform coating film, the phosphor may be formed into a film or ceramic form and then attached onto the LED chip or the light emitting device.

In order to make a difference in light efficiency and light distribution characteristics, a photoelectric conversion material may be located in a remote format. In this case, the photoelectric conversion material is located together with a transparent polymer, glass, or the like depending on its durability and heat resistance.

Since the phosphor coating technique plays a major role in determining the optical characteristics in the light emitting device, control techniques such as the thickness of the phosphor coating layer and the uniform dispersion of the phosphor have been studied variously. QD can also be placed in the LED chip or the light emitting element in the same manner as the phosphor, and can be positioned between the glass or translucent polymer material for light conversion.

In addition, although not shown, various other reflective members, light-transmitting encapsulants, opaque encapsulants, filters, light guide plates, display panels, and the like can be additionally provided around the light emitting element 20.

A part of the heat generated in the light emitting device 20 can be transmitted to the outside through the top electrode layer 30, the side electrode layer 40 and the bottom electrode layer 50, Are transferred to the substrate core layer 10-1 through an insulating mixed material composed of the binder 11 and the heat dissipating powder 12 and then transferred to the substrate core layer 10-1 May be connected to the heat dissipation layer 80 to easily radiate heat to the outside.

FIGS. 3 to 13 are cross-sectional views illustrating steps of manufacturing the light emitting device package of FIG. 1. FIG.

3 to 13, the manufacturing process of the light emitting device package 100 of FIG. 1 will be described step by step. First, as shown in FIG. 3, the light emitting device package 100 is made of a thermally conductive material, May be formed on the substrate core layer 1-1.

At this time, the substrate core layer original plate 1-1 may have a thickness of 10 to 200 percent of a desired thickness on a metal plate made of copper or aluminum.

The accommodating space A may have a width W1 larger than that of the penetration window W to be described later by using general trim equipment, a mold, a drill, a router, an etching equipment, a cutting equipment, a punching equipment, Can be formed on the substrate core layer original plate 1-1.

4, a substrate insulation layer sheet 1-2 made of an insulating mixed material obtained by mixing the binder 11 and the heat dissipation powder 12 is formed on the substrate core layer original plate 1-1, The upper surface electrode sheet 3 is attached to the upper surface of the substrate insulation sheet 1-2 provided on the upper surface and the upper surface of the substrate insulation sheet 1-2 provided on the lower surface, The lower electrode layer sheet 5 can be attached to the lower surface of the lower electrode layer sheet 5.

In this case, the binder 11 may be an epoxy-based insulating resin, and the heat-dissipating powder 12 may be a ceramic powder or an insulated metal powder combined with the binder 11, The substrate core layer original plate 1-1, the substrate insulating layer sheet 1-2, the top electrode layer sheet 3 and the bottom electrode layer sheet 5 have a thickness of 50 to 500 micrometers ), And may be, for example, 510 x 610 mm ² to 1020 x 1200 mm ² so as to be applicable to general PCB equipment.

For example, the upper electrode layer sheet 3 and the lower electrode layer sheet 5 may be formed of copper or aluminum sheets of 10 to 100 micrometers (μm).

5, the upper surface electrode layer sheet 3 and the lower surface electrode sheet 5 are hot pressed in a vacuum state so that the substrate insulation layer 10-2 is filled in the accommodation space A, It is possible to pressurize at high temperature and high pressure.

At this time, when the substrate is pressurized to a vacuum state at 150 degrees or more by using a hot press widely used as a PCB manufacturing equipment, the substrate insulating layer 10-2, which is in a fluid state due to high temperature, And can be charged inside.

Subsequently, as shown in FIG. 6, a substrate insulation layer (not shown) filled in the accommodating space A is formed by using a general trim device, a mold, a drill, a router, an etching device, a cutting device, a punching device, (W) having a width (W2) smaller than the width (W1) of the accommodation space (A).

The shape of the penetrating window W may be variously formed, such as a circular hole, a square hole, a polygonal hole, an elliptical hole, a long hole, and various geometric holes.

Subsequently, as shown in FIG. 7, the plating layer may be plated so that the side surface electrode layer 40 is formed on the inner wall of the through window W by electroless plating.

Here, the electroless plating method is also referred to as chemical plating or autocatalytic plating, in which a reducing agent such as formaldehyde or hydrazine in an aqueous solution supplies electrons such that metal ions are reduced to metal molecules, and this reaction can occur at the catalyst surface.

As the plating agent, copper, nickel-phosphorus, nickel-boron alloy, gold, silver, or the like can be used, and the plating layer is dense compared to electroplating and can have a uniform thickness of about 25 탆.

In the electroless plating method, not only a conductor but also a graphite powder or the like may be painted on various objects to be processed such as a plastic or an organic material to partially apply the desired portion.

Further, after the electroless plating, the thickness of the plating layer can be further increased by using electrolytic plating again with electricity.

8, the upper electrode layer sheet 3 or the lower electrode layer sheet 5 is formed so as to have an electrode separation space or a pattern on the upper electrode layer sheet 3 or the lower electrode layer sheet 5, A photosensitive mask film may be attached and etched with an etching solution after exposure.

Here, as the photosensitive mask film, a dry film photoresist (DFR) used when a printed circuit board or a TFT-LCD is manufactured can be applied.

When the photosensitive mask film is attached to the top electrode layer sheet 3 and the bottom electrode layer sheet 5, the electrode separation space of the top electrode layer sheet 3 is exposed to the etching solution, The penetrating window W may be sealed from the etchant so as to protect the penetrating window W to preserve the side electrode layer 40 formed on the inner wall of the penetrating window W described above.

In addition, a pattern may be formed on the lower electrode layer sheet 5 so that the lower surface heat dissipation layer 80 may be etched to be electrically insulated from the lower electrode layer 50.

9, at least the top electrode layer sheet 3, the bottom electrode layer sheet 5, the side electrode layer 40, the substrate core layer original plate 1-1, and the substrate insulating layer (not shown) 10-2), and a combination thereof may be plated with a further plating layer 60 on the surface.

10, a portion of the substrate core layer 10-1 is exposed through the lower surface of the substrate insulating layer 10-2 from the lower surface heat radiation layer 80 to the lower surface heat radiation layer 80, The recessed groove portion R may be formed through the through hole.

At this time, the depressed trench R may be formed by using a general trim device, a mold, a drill, a router, an etching device, a cutting device, a punching device, a laser drilling device, (10-2) and the substrate core layer (10-1).

11, the upper surface electrode sheet 3 may be pressed by a press so that the substrate core layer 10-1 is thermally connected to the lower surface heat dissipation layer 80. In this case,

At this time, it is possible to use various molds as well as presses and hot presses which are generally used as PCB manufacturing equipment.

12, a bonding medium 70 such as solder paste, solder cream, or solder is applied, dispensed or printed onto the top electrode sheet 3 or the additional plating layer 60 , The light emitting device 20 can be mounted on the bonding medium 70.

At this time, after the light emitting device 20 is mounted on the bonding medium 70, the reflow process may be performed to cure or re-cure the bonding medium 70.

Subsequently, the etched top electrode layer sheet 3, the bottom electrode sheet 5, the substrate core layer original plate 1-1 and the substrate insulating layer 10-2 are cut in a unit package in a cutting line CL It can be cut along with it.

The cutting process is a process of cutting the substrate core layer 10-1 and the substrate insulation layer 10 made of the binder 11 and the heat radiation powder 12, -2), it is very easy to cut by using general trim equipment, molds, drills, routers, etching equipment, cutting equipment, punching equipment and laser drilling equipment.

Therefore, it is possible to form the high heat dissipation package using the substrate core layer 10-1 and the heat dissipation powder 12, and to provide the binder 11 and the heat dissipation powder 12, which are relatively soft materials, The process of trimming, cutting, punching, sheet bonding, pattern formation, molding, and the like is very similar to the conventional PCB manufacturing process using a mixed material of PCB 10, The cost of the package can be reduced, productivity can be greatly improved, and the process is very easy, which can greatly improve moldability such as multi-chip bonding, complicated pattern formation, and additional process.

14 is a cross-sectional view illustrating a backlight unit 1000 according to some embodiments of the present invention.

14, the backlight unit 1000 according to some embodiments of the present invention includes a substrate core layer 10-1 made of a thermally conductive material, and a substrate core layer 10-1 surrounding the substrate core layer 10-1 A substrate 10 made of an insulating mixed material and made of a mixture of a binder 11 and a heat dissipating powder 12; An upper electrode layer 30 formed on the upper surface of the substrate insulating layer 10-2 and including a first electrode layer 31 and a second electrode layer 32 having an electrode separation space and a lower electrode layer 50 A side surface electrode layer 40 formed on a side surface of the substrate insulating layer 10-2 and electrically connecting the top surface electrode layer 30 and the bottom electrode layer 50 to each other, And a light guide plate 110 installed in the path.

1 to 13, the substrate 10, the top electrode layer 30, the bottom electrode layer 50, and the side electrode layer 40 may be formed using various methods as described above. The functions and the configuration of the components of the light emitting device package according to the examples may be the same. Therefore, detailed description is omitted.

Also, the light guide plate 110 may be an optical member that can be made of a light-transmitting material to guide light generated from the light emitting device 20.

The light guide plate 110 may be installed in a path of light generated by the light emitting device 20 to transmit light generated by the light emitting device 20 over a wider area.

The light guide plate 110 may be made of polycarbonate, polysulfone, polyacrylate, polystyrene, polyvinyl chloride, polyvinyl alcohol, polynorbornene, polyester, or the like , And various light transmitting resin materials may be applied. In addition, the light guide plate 110 may be formed by various methods such as forming fine patterns, fine protrusions, diffusion films, or the like on the surface, or forming fine bubbles therein.

Although not shown, various diffusion sheets, prism sheets, filters, and the like may be additionally provided above the light guide plate 110. In addition, various display panels such as an LCD panel may be installed above the light guide plate 110. [

Although not shown, the present invention may include a lighting device including any one or more of the above-described light emitting device packages according to the technical idea of the present invention. Here, the components of the lighting apparatus according to some embodiments of the present invention may have the same configuration and functions as those of the above-described light emitting device package of the present invention. Therefore, detailed description is omitted.

15 is a flowchart showing a method of manufacturing a light emitting device package according to some embodiments of the present invention.

1 to 15, a method of manufacturing a light emitting device package according to some embodiments of the present invention includes the steps of forming a substrate core layer disc 1 - 1 comprising a thermally conductive material, (1), and then a substrate insulating sheet (1-2) made of an insulating mixed material obtained by mixing the binder (11) and the heat dissipating powder (12) And the upper surface electrode sheet 3 is attached to the upper surface of the substrate insulation sheet 1-2 provided on the upper surface and the upper surface of the substrate insulation sheet 1-2 (S2) for attaching the lower surface electrode sheet (5) to the lower surface of the top surface electrode sheet (3) so that the substrate insulating layer (10-2) A step S3 of pressing the electrode sheet 5 in a vacuum state at a high temperature and a high pressure using a hot press, A step S4 of drilling a penetrating window W having a width W2 smaller than the width W1 of the accommodating space A in the substrate insulating layer 10-2 filled in the accommodating space A, A step S5 of plating a plating layer so that a side surface electrode layer 40 is formed on the inner wall of the penetration window W and a step S5 of applying a plating layer to the top surface electrode sheet 3 or the bottom electrode sheet 5, (S6) of attaching a photosensitive mask film to the top electrode layer sheet (3) or the bottom electrode layer sheet (5) so as to form a separation space or pattern and then etching the exposed top surface electrode layer sheet (3) A step S7 of forming a bonding medium 70 on the bonding medium 70 and a step S8 of mounting the light emitting device on the bonding medium 70 and a step S8 of bonding the top surface electrode sheet 3 and the bottom electrode sheet 5, (S9) of cutting the substrate core layer original plate 1-1 and the substrate insulating layer 10-2 into unit packages .

16 is a flowchart showing a method of manufacturing a light emitting device package according to some other embodiments of the present invention.

16, the manufacturing method of a light emitting device package according to some other embodiments of the present invention may include at least a step of forming the top electrode sheet 3, the bottom electrode sheet 5, , The side surface electrode layer (40), the substrate core layer original plate (1-1), the substrate insulating layer (10-2), and a combination thereof is further plated The lower surface electrode layer sheet 5 is formed with a lower surface heat dissipation layer 80 and the lower surface heat dissipation layer 80 is formed with the lower electrode layer sheet 50 in the step S6, (S11) forming a depression groove (R) formed through a part of the substrate core layer (10-1) through the lower surface of the substrate insulating layer (10-2) from the lower surface heat dissipation layer (80) The upper electrode layer sheet 3 is thermally bonded to the lower heat dissipation layer 80 so that the substrate core layer 10-1 is thermally connected to the lower heat dissipation layer 80 (S12) of pressurizing with a press.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1-1: substrate core layer original plate
1-2: substrate insulating sheet sheet
3: Top electrode layer sheet
5: Lower electrode layer sheet
10: substrate
10-1: substrate core layer
10-2: substrate insulating layer
11: Binder
12: Heat-resisting powder
20: Light emitting element
30: upper surface electrode layer
31: first electrode layer
32: second electrode layer
40: side electrode layer
50: lower electrode layer
60: additional plating layer
70: bonding medium
80: lower heat radiating layer
90: packing
110: light guide plate
100, 200, 300, 400: Light emitting device package
1000: Backlight unit

Claims (10)

A substrate core layer made of a thermally conductive material;
A substrate insulating layer formed in a shape surrounding the substrate core layer and made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
An upper electrode layer formed on the upper surface of the substrate insulation layer and including a first electrode layer and a second electrode layer having an electrode separation space;
A lower electrode layer formed on a lower surface of the substrate insulating layer; And
A side electrode layer formed on a side surface of the substrate insulating layer and electrically connecting the top electrode layer and the bottom electrode layer;
Emitting device package. The method according to claim 1,
Wherein the binder comprises an epoxy-based resin, and the heat-dissipating powder is selected from at least one of ceramic powder, metal powder, metal powder coated with an insulator, and combinations thereof. The method according to claim 1,
Wherein the side electrode layer is a plating layer plated along an inner wall of a penetrating window formed in the substrate insulating layer. The method according to claim 1,
A light emitting element mounted on the top electrode layer;
A bonding medium disposed between the top electrode layer and the light emitting device; And
A lower heat dissipation layer disposed on the lower surface of the substrate insulation layer so as to be electrically insulated from the lower electrode layer;
Further comprising:
Wherein the heat dissipation layer is thermally connected to the substrate core layer by a press which presses the recessed groove portion formed through a portion of the substrate core layer through the lower portion of the substrate insulation layer from the lower heat dissipation layer, A light emitting device package. A substrate core layer made of a thermally conductive material;
A substrate insulating layer formed in a shape surrounding the substrate core layer and made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
An upper electrode layer formed on the upper surface of the substrate insulation layer and including a first electrode layer and a second electrode layer having an electrode separation space;
A lower electrode layer formed on a lower surface of the substrate insulating layer;
A side electrode layer formed on a side surface of the substrate insulating layer and electrically connecting the top electrode layer and the bottom electrode layer; And
A light guide plate installed in an optical path of the light emitting element;
And a backlight unit. A substrate core layer made of a thermally conductive material;
A substrate insulating layer formed in a shape surrounding the substrate core layer and made of an insulating mixed material in which a binder and a heat dissipating powder are mixed;
An upper electrode layer formed on the upper surface of the substrate insulation layer and including a first electrode layer and a second electrode layer having an electrode separation space;
A lower electrode layer formed on a lower surface of the substrate insulating layer; And
A side electrode layer formed on a side surface of the substrate insulating layer and electrically connecting the top electrode layer and the bottom electrode layer;
. Preparing a substrate core layer original plate made of a thermally conductive material and having a receiving space formed therein;
Wherein a substrate insulating layer made of an insulating mixed material in which a binder and a heat dissipating powder are mixed is provided on the top and bottom surfaces of the substrate core layer original plate and the top surface electrode layer sheet is attached to the top surface of the substrate insulating layer, Attaching a lower surface electrode layer sheet to the lower electrode sheet;
Pressing the upper surface electrode layer sheet and the lower surface electrode layer sheet in a vacuum state at a high temperature and a high pressure using a hot press so that the substrate insulation layer is filled in the accommodating space;
Boring a penetration window having a width smaller than the width of the accommodation space in the substrate insulation layer filled in the accommodation space;
Plating a plating layer so that a side electrode layer is formed on an inner wall of the penetrating window;
Attaching a photosensitive mask film to the top electrode layer sheet or the bottom electrode sheet so that an electrode separation space or a pattern is formed on the top electrode layer sheet or the bottom electrode sheet, And
Cutting the etched top electrode layer sheet, the bottom electrode layer sheet, the substrate core layer original plate, and the substrate insulating layer into unit packages;
Emitting device package. 8. The method of claim 7,
Wherein the step of cutting the etched top electrode layer sheet, the bottom electrode layer sheet, the substrate core layer original plate, and the substrate insulating layer into a unit package includes the steps of: cutting at least the top electrode layer sheet, the bottom electrode layer sheet, Plating an additional plating layer on a surface of the core layer original plate, the substrate insulating layer, and a combination thereof;
Emitting device package. 8. The method of claim 7,
Forming a bonding medium on the top electrode layer sheet before cutting the etched top electrode layer sheet, the bottom electrode layer sheet, the substrate core layer master plate, and the substrate insulating layer into unit packages; And
Placing a light emitting device on the bonding medium;
Emitting device package. 8. The method of claim 7,
A step of attaching a photosensitive mask film to the top electrode layer sheet or the bottom electrode layer sheet so as to form an electrode separation space or a pattern on the top electrode layer sheet or the bottom electrode sheet, A lower surface heat dissipation layer is formed on the lower surface electrode sheet,
Forming a recessed depressed portion formed in the heat dissipation layer through a portion of the substrate core layer from the lower heat dissipation layer through the lower portion of the substrate insulation layer; And
Pressing the upper electrode layer sheet with a press so that the substrate core layer is thermally connected to the lower heat dissipation layer;
Emitting device package.

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