KR20150109832A - Light emitting device, and lighting system - Google Patents

Abstract

An embodiment of the present invention relates to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package, and a lighting system. The light emitting device according to the embodiment comprises: a substrate(102); an insulation layer(110) on the substrate(102); a first conductive semiconductor layer(132) on the substrate(102) and the insulation layer(110); an active layer(134) on the first conductive semiconductor layer(132); a second conductive semiconductor layer(136) on the active layer(134); a first electrode(151) on the first conductive semiconductor layer(132); and a second electrode(152) on a second conductive semiconductor layer(152).

Description

[0001] LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM [0002]

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

Light Emitting Device is a pn junction diode whose electrical energy is converted into light energy. It can be produced from compound semiconductor such as group III and group V on the periodic table and by controlling the composition ratio of compound semiconductor, It is possible.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, becomes a light emitting element.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

The nitride semiconductor light emitting device may be classified into a lateral type light emitting device and a vertical type light emitting device depending on the position of the electrode layer.

A horizontal type light emitting device is formed such that a nitride semiconductor layer is formed on a sapphire substrate and two electrode layers are disposed on the upper side of the nitride semiconductor layer.

According to the conventional technology, as the continuous high power LED is required, the size of the LED chip is increased and the amount of current applied is also increasing.

Thus, the design of the pad is increased and the width and thickness of the pad must also be widened to apply a high current.

In addition, the current crowding effect is increased in the current flow between the spatially separated p-pad and the n-pad, and the power amount contributing to the light emission relative to the injected power efficiency is not linearly increased .

Therefore, there is a need to increase the current spreading effect so as to use the entire area of the LED chip evenly.

Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving a current crowding problem.

A light emitting device according to an embodiment includes a substrate 102; An insulator layer 110 on the substrate 102; A first conductive semiconductor layer 132 on the substrate 102 and the insulator layer 110; An active layer 134 on the first conductive semiconductor layer 132; A second conductive semiconductor layer 136 on the active layer 134; And a first electrode 151 on the first conductive semiconductor layer 132 and a second electrode 152 on the second conductive semiconductor layer 136.

An illumination system according to an embodiment may include a light emitting module having the light emitting element.

According to the embodiments, it is possible to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving current efficiency by improving a current spreading effect.

1 is a sectional view of a light emitting device according to a first embodiment;
2 is a partial cross-sectional view of a light emitting device according to the first embodiment;
3 is a partial cross-sectional view of a light emitting device according to a second embodiment;
4 is a partial cross-sectional view of a light emitting device according to a third embodiment;
5 to 9 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment.
10 is a cross-sectional view of a light emitting device package according to an embodiment.
11 is an exploded perspective view of a lighting apparatus according to an embodiment.

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment.

A light emitting device 100 according to an embodiment includes a substrate 102, an insulator layer 110 on the substrate 102, and a first conductive semiconductor layer (not shown) on the substrate 102 and the insulator layer 110 An active layer 134 on the first conductive semiconductor layer 132, a second conductive semiconductor layer 136 on the active layer 134, and a first conductive semiconductor layer 132 on the first conductive semiconductor layer 132. [ And a second electrode 152 on the second conductive type semiconductor layer 136. The first electrode 151 and the second electrode 152 are formed on the first conductive type semiconductor layer 136 and the second conductive type semiconductor layer 136, respectively.

The first conductive semiconductor layer 132, the active layer 134, and the second conductive semiconductor layer 136 may form the light emitting structure 130.

According to the embodiment, the insulator layer 110 may be disposed under the light emitting structure 130 to increase the current spreading effect to improve the light efficiency.

The insulator layer 110 may include a DBR structure to contribute to the current diffusion as well as to increase the light reflectance to increase the light extraction efficiency. The insulator layer 110 may include, but is not limited to, a plurality of stacked insulating layer structures, for example, SiO _x / TiO _y (where 0 <x <1, 0 <y <1) .

Also, in the embodiment, the insulator layer 110 may include a first insulator layer 111 and a second insulator layer 112 which are spaced apart from each other. The first insulator layer 111 may include a first SiO _x layer 111b and a first TiO _y layer 111a and the second insulator layer 112 may include a second SiO _x layer 112b / And a second TiO _y layer 112a.

At this time, the second insulator layer 112 overlaps with the second electrode 152 to prevent current concentration at the second electrode 152, thereby contributing to current diffusion. For example, the second insulator layer 112 may be arranged to overlap with the second electrode 152 in the vertical direction.

The first insulator layer 111 is disposed so as not to overlap with the first electrode 151 in the vertical direction so that the first conductivity type carrier in the first electrode 151, Thereby contributing to the current diffusion.

1, the lower surface of the first electrode 151 is disposed lower than the upper surface of the insulator layer 110, so that the first conductive type carrier, which is supplied from the first electrode 151, (110) to prevent current concentration in the mesa edge region.

In addition, according to the embodiment, the insulator layer 110 and the conductive layer 115 electrically conductive on the lower side can increase the side current diffusion. For example, the conductive layer 115 may include a first conductive layer 115a under the first insulator layer 111 and a second conductive layer 115b under the second insulator layer 112 But is not limited thereto.

Accordingly, according to the embodiment, the insulator layer 110 and the conductive layer 115 form an ODR structure, for example, a SiO _x / metal structure, thereby maximizing current diffusion and light extraction efficiency.

The conductive layer 115 may be made of a material having high current conductivity such as Al, Ag, or Au, but is not limited thereto.

Also, the embodiment may include the insulator layer 110 and the undoped semiconductor layer 120 on the substrate 102. For example, an undoped nitride semiconductor layer may be formed on the substrate 102 to minimize potential generation due to lattice mismatch between the substrate 102 and the light emitting structure 130, The untowled semiconductor layer 120 is laterally grown and then merged to improve the crystal quality of the first conductivity type semiconductor layer 132 formed later.

2 is a sectional view (102) of the light emitting device according to the second embodiment.

The second embodiment can employ the technical features of the first embodiment, and will be described mainly on the main features of the second embodiment.

According to the second embodiment, the heat dissipation efficiency can be improved by including the heat conduction layer 105 disposed on the substrate 102.

For example, the second embodiment may include a metal layer of Cu, Al, Ag or the like as the heat conduction layer 105 to increase the heat dissipation efficiency, thereby improving the reliability of the device.

In the embodiment, the thermally conductive layer 105 is disposed so as to overlap with the insulator layer 110 in the vertical direction, thereby providing a wide diffusion function of the first conductivity type carrier having a high moving speed, Stability can be enhanced.

3 is a sectional view (103) of the light emitting device according to the third embodiment.

The third embodiment can adopt the technical features of the first embodiment and the second embodiment, and will be described mainly about the main features of the third embodiment.

In the third embodiment, the thermally conductive layer includes the air gap 107 to improve the reliability of the device by improving the heat radiation function.

According to the embodiments, it is possible to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving current efficiency by improving a current spreading effect.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. The following description is based on the first embodiment, but the manufacturing method of the embodiment is not limited thereto.

The light emitting device in the embodiment may be formed of a material such as GaN, GaAs, GaAsP, or GaP. For example, Green-Blue LEDs can use GaN (InGaN), Yellow-Red LEDs can use InGaAIP and AIGaAs, and Full Color can be realized by changing the composition of materials.

First, a substrate 102 is prepared as shown in FIG. The substrate 102 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 102 is a sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used. A concavo-convex structure may be formed on the substrate 102, but the present invention is not limited thereto. The substrate 102 may be wet-cleaned to remove impurities on the surface.

Next, as shown in FIG. 5, the insulator layer 110 may be formed on the substrate 102 to increase the current spreading effect to improve the light efficiency.

The insulator layer 110 may include a DBR structure to contribute to the current diffusion as well as to increase the light reflectance to increase the light extraction efficiency. The insulator layer 110 may include, but is not limited to, a plurality of stacked insulating layer structures, for example, SiO _x / TiO _y (where 0 <x <1, 0 <y <1) .

The insulator layer 110 may include a first insulator layer 111 and a second insulator layer 112 which are spaced apart from each other.

The first insulator layer 111 may include a first SiO _x layer 111b and a first TiO _y layer 111a and the second insulator layer 112 may include a second SiO _x layer 112b / And a second TiO _y layer 112a.

At this time, the second insulator layer 112 is disposed to overlap the second electrode 152 formed later in the vertical direction, thereby preventing current concentration at the second electrode 152, and contributing to the current diffusion.

The first insulator layer 111 is disposed so as not to vertically overlap with the first electrode 151 to be formed thereafter so that the first conductivity type carrier in the first electrode 151, And can contribute to current diffusion by being dispersed and moved.

In addition, according to the embodiment, the insulator layer 110 and the conductive layer 115 electrically conductive on the lower side can increase the side current diffusion.

Accordingly, according to the embodiment, the insulator layer 110 and the conductive layer 115 form an ODR structure, for example, a SiO _x / metal structure, thereby maximizing current diffusion and light extraction efficiency.

The conductive layer 115 may be made of a material having high current conductivity such as Al, Ag, or Au, but is not limited thereto.

Next, as shown in FIG. 6, an undoped semiconductor layer 120 may be formed on the substrate 102 and the insulator layer 110.

The undoped semiconductor layer 120 may mitigate the lattice mismatch between the material of the light emitting structure 130 and the substrate 102 and the material of the undoped semiconductor layer 120 may be a Group III- , GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.

According to the embodiment, an undoped nitride semiconductor layer may be formed on the substrate 102 to minimize dislocations due to lattice mismatch between the substrate 102 and the light emitting structure 130, The untowled semiconductor layer 120 is laterally grown and then merged to improve the crystal quality of the first conductivity type semiconductor layer 132 formed later.

7, a light emitting structure 130 including a first conductivity type semiconductor layer 132, an active layer 134, and a second conductivity type semiconductor layer 136 is formed on the undoped semiconductor layer 120, .

The first conductive semiconductor layer 132 may be formed of a semiconductor compound. Group 3-Group 5, Group 2-Group 6, and the like, and the first conductive type dopant may be doped. When the first conductive semiconductor layer 132 is an N-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, and Te as an N-type dopant.

The first conductive semiconductor layer 132 may include a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + .

The first conductive semiconductor layer 132 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The N-type GaN layer may be formed on the first conductive semiconductor layer 132 by a chemical vapor deposition (CVD) method, molecular beam epitaxy (MBE), sputtering, or vapor phase epitaxy (HVPE) . The first conductivity type semiconductor layer 132 may be formed by depositing a silane containing an n-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ) Gas (SiH ₄ ) may be implanted and formed.

In an embodiment, a current diffusion layer (not shown) may be formed on the first conductive semiconductor layer 132. The current diffusion layer may be an undoped GaN layer, but is not limited thereto.

In the embodiment, an electron injection layer (not shown) may be formed on the current diffusion layer. The electron injection layer may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element ^{6.0x10 18 atoms / cm 3 ~ 8.0x10} 18 atoms / cm 3.

Embodiments can form a strain control layer (not shown) on the electron injection layer. For example, a strain control layer formed of In _y Al _x Ga _(1-xy) N (0? X? 1, 0? _Y? 1) / GaN or the like can be formed on the electron injection layer.

The strain control layer can effectively relax the stress due to the lattice mismatch between the first conductivity type semiconductor layer 132 and the active layer 134.

Thereafter, the active layer 134 may be formed on the strain control layer.

Electrons injected through the first conductivity type semiconductor layer 132 and holes injected through the second conductivity type semiconductor layer 136 which are formed later meet with each other to form an energy band unique to the active layer Which emits light having an energy determined by &lt; RTI ID = 0.0 &gt;

The active layer 134 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 134 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 134 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP But is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

The second conductive semiconductor layer 136 may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and the second conductivity type dopant may be doped. For example, the second conductive semiconductor layer 136 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And the like. When the second conductive semiconductor layer 136 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

The second conductive semiconductor layer 136 is formed on the second conductive semiconductor layer 136. The second conductive semiconductor layer 136 may include a p-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium The p-type GaN layer may be formed by implanting pentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ }, but the present invention is not limited thereto.

The first conductive semiconductor layer 132 may be an n-type semiconductor layer and the second conductive semiconductor layer 136 may be a p-type semiconductor layer. However, the present invention is not limited thereto. Also, on the second conductive semiconductor layer 136, a semiconductor (e.g., an n-type semiconductor layer) (not shown) having a polarity opposite to the polarity of the second conductive type may be formed. Accordingly, the light emitting structure 130 may have any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Then, an ohmic layer 140 is formed on the second conductive semiconductor layer 136.

For example, the ohmic layer 140 may be formed by laminating a single metal, a metal alloy, a metal oxide, or the like so as to efficiently perform carrier injection. For example, the ohmic layer 140 may be formed of a superior material that is in electrical contact with a semiconductor. For example, the ohmic layer 140 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (ZnO), indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON nitride, AGZO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Ni, IrOx / Au, and Ni / IrOx / , Au, and Hf, and is not limited to such a material.

9, a part of the ohmic layer 140, the second conductivity type semiconductor layer 136, the active layer 134, and the first conductivity type semiconductor layer 132 is removed to form a first conductivity type semiconductor layer 132 may be exposed.

The second electrode 152 and the first electrode 151 may be formed on the ohmic layer 140 and the exposed first conductive semiconductor layer 132, respectively.

The first electrode 151 and the second electrode 152 may be formed of a metal such as Ti, Cr, Ni, Al, Pt, Au, Molybdenum (Mo) or a semiconductor substrate into which an impurity is implanted.

According to the embodiments, it is possible to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of improving current efficiency by improving a current spreading effect.

10 is a view illustrating a light emitting device package 200 to which the light emitting device according to the embodiment is applied.

10, a light emitting device package according to an embodiment includes a body 205, a first lead electrode 213 and a second lead electrode 214 disposed on the body 205, a body 205, A light emitting device 100 according to an embodiment of the present invention is provided in the first lead electrode 213 and the second lead electrode 214 and is electrically connected to the first lead electrode 213 and the second lead electrode 214. A molding member 230 surrounding the light emitting device 100 .

The body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 213 and the second lead electrode 214 are electrically isolated from each other and provide power to the light emitting device 100. [ The first lead electrode 213 and the second lead electrode 214 may increase the light efficiency by reflecting the light generated from the light emitting device 100. The heat generated from the light emitting device 100 To the outside.

The light emitting device 100 may be disposed on the body 205 or may be disposed on the first lead electrode 213 or the second lead electrode 214.

The light emitting device 100 may be electrically connected to the first lead electrode 213 and the second lead electrode 214 by a wire, flip chip, or die bonding method.

The molding member 230 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiments may be arrayed on a substrate, and a lens, a light guide plate, a prism sheet, a diffusion sheet, etc., which are optical members, may be disposed on the light path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. The light unit may be implemented as a top view or a side view type and may be provided in a display device such as a portable terminal and a notebook computer, or may be variously applied to a lighting device and a pointing device. Still another embodiment may be embodied as a lighting device including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting device may include a lamp, a streetlight, an electric signboard, and a headlight.

11 is an exploded perspective view of a lighting apparatus according to an embodiment.

12, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, and a socket 2800 . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device package according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

The substrate 102, the insulator layer 110,
The first conductive semiconductor layer 132, the active layer 134,
The second conductive semiconductor layer 136, the first electrode 151, the second electrode 152,

Claims (11)

Board;
An insulator layer on the substrate;
A first conductivity type semiconductor layer on the substrate and the insulator layer;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer; And
A first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. The method according to claim 1,
The insulator layer
A light emitting device comprising a first insulator layer and a second insulator layer spaced apart from each other. The method according to claim 1,
And the second insulator layer overlaps with the second electrode in the vertical direction. The method according to claim 1,
Wherein the first insulator layer does not overlap with the first electrode in the vertical direction. The method according to claim 1,
And a conductive layer on the lower side of the insulator layer. The method according to claim 1,
Further comprising an insulator layer and an on-state semiconductor layer on the substrate. The method according to claim 1,
And a thermally conductive layer disposed on the substrate. 8. The method of claim 7,
The heat-
And overlaps with the insulator layer in the vertical direction. 8. The method of claim 7,
The heat-
A light emitting device comprising a metal layer. 8. The method of claim 7,
The heat-
A light emitting device comprising an air gap. A lighting system comprising a light emitting module comprising a light emitting element according to any one of claims 1 to 10.

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