KR102212752B1 - Light emitting device, and lighting system - Google Patents

Abstract

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.
The light emitting device according to the embodiment includes a substrate 102; An insulator layer 110 on the substrate 102; A first conductivity type semiconductor layer 132 on the substrate 102 and the insulator layer 110; An active layer 134 on the first conductivity type semiconductor layer 132; A second conductivity type semiconductor layer 136 on the active layer 134; And a first electrode 151 on the first conductivity type semiconductor layer 132 and a second electrode 152 on the second conductivity type semiconductor layer 136.

Description

Light emitting device and lighting system {LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM}

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

Light Emitting Device is a pn junction diode that converts electrical energy into light energy. It can be created as a compound semiconductor such as Group III and Group V on the periodic table. Various colors can be realized by controlling the composition ratio of the compound semiconductor. It is possible.

When a forward voltage is applied, the electrons in the n-layer and the holes in the p-layer are combined to emit energy equivalent to the band gap energy of the conduction band and the balance band. Is mainly emitted in the form of heat or light, and becomes a light emitting device when radiated in the form of light.

For example, nitride semiconductors are attracting great interest in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light-emitting device, a green light-emitting device, and an ultraviolet (UV) light-emitting device using a nitride semiconductor are commercialized and widely used.

The nitride semiconductor light emitting device can be classified into a horizontal type light emitting device and a vertical type light emitting device according to the position of the electrode layer.

The horizontal type light emitting device is formed such that a nitride semiconductor layer is formed on a sapphire substrate, and two electrode layers are disposed above the nitride semiconductor layer.

According to the prior art, as a continuous high power LED is required, the size of the LED chip increases, and the amount of applied current is also increasing.

Therefore, the design of the pad is increased, and the width or thickness of the pad must also be widened to apply a high current.

In addition, there is a problem that the amount of power contributing to light emission is not linearly increased compared to the injected power efficiency due to the increased current crowding effect in the flow of current between the p-pad and the n-pad that are spatially separated. .

Therefore, there is a need to increase the current spreading effect to evenly use the entire area of the LED chip.

The embodiment is to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system capable of improving the current crowding problem.

The light emitting device according to the embodiment includes a substrate 102; An insulator layer 110 on the substrate 102; A first conductivity type semiconductor layer 132 on the substrate 102 and the insulator layer 110; An active layer 134 on the first conductivity type semiconductor layer 132; A second conductivity type semiconductor layer 136 on the active layer 134; And a first electrode 151 on the first conductivity type semiconductor layer 132 and a second electrode 152 on the second conductivity type semiconductor layer 136.

The lighting system according to the embodiment may include a light emitting module including the light emitting device.

According to the embodiment, a light emitting device capable of improving light efficiency by increasing a current spreading effect, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system can be provided.

1 is a cross-sectional view of a light emitting device according to a first embodiment.
2 is a partial cross-sectional view of a light emitting device according to the first embodiment.
3 is a partial cross-sectional view of a light emitting device according to a second embodiment.
4 is a partial cross-sectional view of a light emitting device according to a third embodiment.
5 to 9 are cross-sectional views illustrating a method of manufacturing a light emitting device according to an embodiment.
10 is a cross-sectional view of a light emitting device package according to an embodiment.
11 is an exploded perspective view of a lighting device according to an embodiment.

In the description of the embodiment, each layer (film), region, pattern, or structure is "on/over" or "under" of the substrate, each layer (film), region, pad, or patterns. In the case of being described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed do. In addition, standards for the top/top or bottom of each layer will be described based on the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment.

The light emitting device 100 according to the embodiment includes a substrate 102, an insulator layer 110 on the substrate 102, and a first conductivity-type semiconductor layer on the substrate 102 and the insulator layer 110 ( 132, an active layer 134 on the first conductivity type semiconductor layer 132, and a second conductivity type semiconductor layer 136 on the active layer 134 and the first conductivity type semiconductor layer 132 A second electrode 152 may be included on the first electrode 151 and the second conductivity type semiconductor layer 136.

The first conductivity type semiconductor layer 132, the active layer 134 and the second conductivity type semiconductor layer 136 may constitute the light emitting structure 130.

According to the embodiment, the insulator layer 110 is disposed under the light emitting structure 130 to increase a current spreading effect, thereby improving light efficiency.

The insulator layer 110 includes a DBR structure and not only contributes to current diffusion, but also increases light reflectance, thereby increasing light extraction efficiency. The insulator layer 110 may include a plurality of stacked insulating layer structures, for example, SiO _x /TiO _y (however, 0<x<1, 0<y<1), but is not limited thereto. .

In addition, in an embodiment, the insulator layer 110 may include a first insulator layer 111 and a second insulator layer 112 spaced apart from each other. The first insulation layer 111 is the first SiO _x layer (111b) / a first TiO _y may include a layer (111a), the second insulator layer 112 is a second SiO _x layer (112b) / The second TiO _y layer 112a may be included, but is not limited thereto.

In this case, the second insulator layer 112 is disposed so as to overlap the second electrode 152 and the upper and lower portions thereof to prevent current concentration in the second electrode 152, thereby contributing to current diffusion. For example, the second insulator layer 112 may be disposed to overlap the second electrode 152 in a vertical direction.

On the other hand, the first insulator layer 111 is disposed so as not to overlap the first electrode 151 in a vertical direction so that the first conductivity type carriers, for example, electrons in the first electrode 151 are dispersed and moved downward. Thus, it can contribute to current diffusion.

In addition, in an embodiment, the bottom surface of the first electrode 151 is disposed lower than the upper surface of the insulator layer 110, unlike the illustration in FIG. 1, so that the first conductivity type carrier supplied from the first electrode 151 is an insulator layer Blocked by (110) can prevent current concentration in the mesa edge region.

In addition, according to the embodiment, the insulator layer 110 and the conductive layer 115 having electrical conductivity underneath may be included to increase side current diffusion. For example, the conductive layer 115 may include a first conductive layer 115a under the first insulator layer 111 and a second conductive layer 115b under the second insulator layer 112. However, it is not limited thereto.

Accordingly, according to an embodiment, the insulator layer 110 and the conductive layer 115 form an ODR structure, for example, a SiO _x /metal structure, thereby maximizing current diffusion and light extraction efficiency.

The conductive layer 115 may be formed of a material such as Al, Ag, or Au having high current conductivity, but is not limited thereto.

In addition, the embodiment may include an undoped semiconductor layer 120 on the insulator layer 110 and the substrate 102. For example, an undoped nitride semiconductor layer is formed on the substrate 102 to minimize the occurrence of dislocations due to lattice mismatch between the substrate 102 and the light emitting structure 130, and the insulator layer 110 Since the undoped semiconductor layer 120 is laterally grown and then merged, the crystal quality of the first conductivity type semiconductor layer 132 to be formed may be improved.

2 is a cross-sectional view 102 of a light emitting device according to a second embodiment.

The second embodiment can adopt the technical features of the first embodiment, and the main features of the second embodiment will be described below.

According to the second embodiment, heat dissipation efficiency may be improved by including the heat conductive layer 105 disposed on the substrate 102.

For example, the second embodiment includes a metal layer such as Cu, Al, or Ag as the heat conductive layer 105 to increase heat dissipation efficiency, thereby increasing the reliability of the device.

In the embodiment, the heat conductive layer 105 is disposed so as to overlap the insulator layer 110 in a vertical direction to impart a wide diffusion function of the first conductive type carrier having a high moving speed, and increase the heat dissipation function to increase the thermal effect of the element. It can increase the stability.

3 is a cross-sectional view 103 of a light emitting device according to a third embodiment.

The third embodiment can adopt the technical features of the first and second embodiments, and the main features of the third embodiment will be described below.

In the third embodiment, the heat conductive layer includes an air gap 107 to improve the reliability of the device by improving the heat dissipation function.

According to the embodiment, a light emitting device capable of improving light efficiency by increasing a current spreading effect, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system can be provided.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 4 to 9. In the following description, the description will be made based on the first embodiment, but the manufacturing method of the embodiment is not limited thereto.

The light emitting device in the embodiment may be formed of a material such as GaN, GaAs, GaAsP, or GaP. For example, Green~Blue LEDs can use GaN (InGaN), Yellow~Red LEDs can use InGaAIP, AIGaAs, and full color can be implemented according to the change of the material composition.

First, a substrate 102 is prepared as shown in FIG. 4. The substrate 102 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 102 is sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ At least one of can be used. An uneven structure may be formed on the substrate 102, but the embodiment is not limited thereto. The substrate 102 may be wet cleaned to remove impurities from the surface.

Next, as shown in FIG. 5, the insulator layer 110 is formed on the substrate 102 to increase a current spreading effect, thereby improving light efficiency.

The insulator layer 110 includes a DBR structure and not only contributes to current diffusion, but also increases light reflectance, thereby increasing light extraction efficiency. The insulator layer 110 may include a plurality of stacked insulating layer structures, for example, SiO _x /TiO _y (however, 0<x<1, 0<y<1), but is not limited thereto. .

The insulator layer 110 may include a first insulator layer 111 and a second insulator layer 112 spaced apart from each other.

The first insulation layer 111 is the first SiO _x layer (111b) / a first TiO _y may include a layer (111a), the second insulator layer 112 is a second SiO _x layer (112b) / The second TiO _y layer 112a may be included, but is not limited thereto.

In this case, the second insulator layer 112 may be disposed to overlap the second electrode 152 formed later in a vertical direction to prevent current concentration in the second electrode 152, thereby contributing to current diffusion.

On the other hand, the first insulator layer 111 is disposed so as not to overlap in the vertical direction with the first electrode 151 to be formed thereafter, so that the first conductivity type carrier, for example, electrons from the first electrode 151 goes downward. Dispersion movement can contribute to current diffusion.

In addition, according to the embodiment, the insulator layer 110 and the conductive layer 115 having electrical conductivity underneath may be included to increase side current diffusion.

Accordingly, according to an embodiment, the insulator layer 110 and the conductive layer 115 form an ODR structure, for example, a SiO _x /metal structure, thereby maximizing current diffusion and light extraction efficiency.

The conductive layer 115 may be formed of a material such as Al, Ag, or Au having high current conductivity, but is not limited thereto.

Next, as shown in FIG. 6, afterwards, an undoped semiconductor layer 120 may be formed on the substrate 102 and the insulator layer 110.

The undoped semiconductor layer 120 may alleviate lattice mismatch between the material of the light emitting structure 130 and the substrate 102, and the material of the undoped semiconductor layer 120 is a group III-5 compound semiconductor, for example , GaN, InN, AlN, InGaN, AlGaN, InAlGaN, may be formed of at least one of AlInN.

According to the embodiment, the undoped nitride semiconductor layer is formed on the substrate 102 to minimize the generation of dislocations due to lattice mismatch between the substrate 102 and the light emitting structure 130, and the insulator layer 110 The undoped semiconductor layer 120 is laterally grown and then merged, thereby improving the crystal quality of the first conductivity type semiconductor layer 132 to be formed thereafter.

Next, as shown in FIG. 7, a light emitting structure 130 including a first conductivity type semiconductor layer 132, an active layer 134, and a second conductivity type semiconductor layer 136 on the undoped semiconductor layer 120 is formed. Can be formed.

The first conductivity type semiconductor layer 132 may be formed of a semiconductor compound. It may be implemented with a compound semiconductor such as Group 3-5 and Group 2-6, and may be doped with a first conductivity type dopant. When the first conductivity-type semiconductor layer 132 is an N-type semiconductor layer, the first conductivity-type dopant is an N-type dopant, and may include Si, Ge, Sn, Se, and Te, but is not limited thereto.

The first conductivity type semiconductor layer 132 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) Can include.

The first conductivity type semiconductor layer 132 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The first conductivity-type semiconductor layer 132 may be formed of an N-type GaN layer using a method such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputtering or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductivity-type semiconductor layer 132 is a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and silicon (Si) in the chamber. It may be formed by injecting gas (SiH ₄ ).

In an embodiment, a current diffusion layer (not shown) may be formed on the first conductivity type semiconductor layer 132. The current diffusion layer may be an undoped gallium nitride layer, but is not limited thereto.

In an embodiment, an electron injection layer (not shown) may be formed on the current diffusion layer. The electron injection layer may be a first conductivity type gallium nitride layer. For example, since the electron injection layer is doped with an n-type doping element at a concentration of 6.0x10 ¹⁸ atoms/cm ³ to 8.0x10 ¹⁸ atoms/cm ³ , electron injection can be efficiently performed.

In the embodiment, a strain control layer (not shown) may be formed on the electron injection layer. For example, a strain control layer formed of In _y Al _x Ga _(1-xy) N(0≦x≦1, 0≦y≦1)/GaN, etc. may be formed on the electron injection layer.

The strain control layer may effectively relieve stress caused by a lattice mismatch between the first conductivity type semiconductor layer 132 and the active layer 134.

Thereafter, an active layer 134 may be formed on the strain control layer.

In the active layer 134, electrons injected through the first conductivity-type semiconductor layer 132 and holes injected through the second conductivity-type semiconductor layer 136 formed thereafter meet each other to form an energy band specific to the active layer (light emitting layer) material. It is a layer that emits light with energy determined by.

The active layer 134 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, in the active layer 134, trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) may be injected to form a multiple quantum well structure. It is not limited thereto.

The well layer/barrier layer of the active layer 134 may be formed in one or more pair structures of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, GaP(InGaP)/AlGaP. However, it is not limited thereto. The well layer may be formed of a material having a band gap lower than that of the barrier layer.

The second conductivity type semiconductor layer 136 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor such as Group 3-5 and Group 2-6, and may be doped with a second conductivity type dopant. For example, the second conductivity type semiconductor layer 136 has a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may include a semiconductor material having. When the second conductivity-type semiconductor layer 136 is a P-type semiconductor layer, the second conductivity-type dopant is a P-type dopant and may include Mg, Zn, Ca, Sr, Ba, or the like.

The second conductivity type semiconductor layer 136 is a vicetyl cyclo containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium (Mg) in the chamber. Pentadienyl magnesium (EtCp ₂ Mg) {Mg(C ₂ H ₅ C ₅ H ₄ ) ₂ } may be implanted to form a p-type GaN layer, but is not limited thereto.

In an embodiment, the first conductivity-type semiconductor layer 132 may be an n-type semiconductor layer, and the second conductivity-type semiconductor layer 136 may be implemented as a p-type semiconductor layer, but is not limited thereto. In addition, a semiconductor, for example, an n-type semiconductor layer (not shown) having a polarity opposite to that of the second conductivity type may be formed on the second conductivity type semiconductor layer 136. Accordingly, the light emitting structure 130 may be implemented in any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Thereafter, an ohmic layer 140 is formed on the second conductivity type semiconductor layer 136.

For example, the ohmic layer 140 may be formed by stacking a single metal, a metal alloy, or a metal oxide in multiple layers so that carrier injection can be efficiently performed. For example, the ohmic layer 140 may be formed of an excellent material that is in electrical contact with a semiconductor. For example, the ohmic layer 140 is ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt , Au, and may be formed to include at least one of Hf, but is not limited to these materials.

Next, as shown in FIG. 9, a part of the ohmic layer 140, the second conductivity type semiconductor layer 136, the active layer 134, and the first conductivity type semiconductor layer 132 is removed to form the first conductivity type semiconductor layer ( Part of the upper surface of 132) can be exposed.

Thereafter, a second electrode 152 and a first electrode 151 may be formed on the ohmic layer 140 and the exposed first conductivity type semiconductor layer 132, respectively.

The first electrode 151 and the second electrode 152 are titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), It may be formed of at least one of a semiconductor substrate implanted with molybdenum (Mo) or impurities.

According to the embodiment, a light emitting device capable of improving light efficiency by increasing a current spreading effect, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system can be provided.

10 is a diagram illustrating a light emitting device package 200 to which a light emitting device according to an embodiment is applied.

Referring to FIG. 10, a light emitting device package according to an embodiment includes a body 205, a first lead electrode 213 and a second lead electrode 214 disposed on the body 205, and the body 205 The light emitting device 100 according to the embodiment provided in the first lead electrode 213 and electrically connected to the second lead electrode 214, and a molding member 230 surrounding the light emitting device 100 Can include.

The body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 213 and the second lead electrode 214 are electrically separated from each other, and supply power to the light emitting device 100. In addition, the first lead electrode 213 and the second lead electrode 214 reflect light generated from the light emitting device 100 to increase light efficiency, and heat generated from the light emitting device 100 It can also play a role of discharging to outside.

The light emitting device 100 may be disposed on the body 205 or may be disposed on the first lead electrode 213 or the second lead electrode 214.

The light emitting device 100 may be electrically connected to the first lead electrode 213 and the second lead electrode 214 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 230 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change a wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiment may be arrayed on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on the optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided to display devices such as portable terminals and notebook computers, or may be variously applied to lighting devices and indication devices. Another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above-described embodiments. For example, the lighting device may include a lamp, a street light, an electric sign, and a headlamp.

11 is an exploded perspective view of a lighting device according to an embodiment.

Referring to FIG. 12, a lighting device according to an embodiment includes a cover 2100, a light source module 2200, a radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. I can. In addition, the lighting device according to the embodiment may further include one or more of a member 2300 and a holder 2500. The light source module 2200 may include a light emitting device package according to the embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape with a hollow and an open portion. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the radiator 2400. The cover 2100 may have a coupling portion coupled to the radiator 2400.

A milky white paint may be coated on the inner surface of the cover 2100. The milky white paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is to allow light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 2100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent or opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the radiator 2400. Accordingly, heat from the light source module 2200 is conducted to the radiator 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the radiator 2400 and has guide grooves 2310 into which a plurality of light source units 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the substrate and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects light reflected on the inner surface of the cover 2100 and returning toward the light source module 2200 toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700. Accordingly, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides it to the light source module 2200. The power supply unit 2600 is accommodated in the storage groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide portion 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A number of components may be disposed on one surface of the base 2650. A number of components include, for example, a DC converter for converting AC power provided from an external power source to DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension part 2670, and the other end of the "+ wire" and "- wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is solidified, and allows the power supply part 2600 to be fixed inside the inner case 2700.

Features, structures, effects, and the like described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the embodiments have been described above, these are only examples and are not intended to limit the embodiments, and those of ordinary skill in the field to which the embodiments belong are not departing from the essential characteristics of the embodiments. It will be seen that branch transformation and application are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set in the appended claims.

Substrate 102, insulator layer 110,
First conductivity type semiconductor layer 132, active layer 134,
The second conductivity type semiconductor layer 136, the first electrode 151, the second electrode 152

Claims (11)

Board;
An insulator layer disposed on the substrate;
A first conductivity type semiconductor layer disposed on the substrate and the insulator layer;
An active layer disposed on the first conductivity type semiconductor layer;
A second conductivity type semiconductor layer disposed on the active layer;
A first electrode disposed on the first conductivity type semiconductor layer;
A second electrode disposed on the second conductivity type semiconductor layer;
A conductive layer disposed under the insulator layer; And
And an undoped semiconductor layer disposed on the substrate and covering the insulator layer and the conductive layer,
The insulator layer,
A first insulator layer disposed so as not to overlap with the first electrode in a vertical direction; And
A second insulator layer spaced apart from the first electrode and disposed to overlap the second electrode in a vertical direction,
Further comprising a heat conductive layer disposed on the substrate,
The heat conductive layer has the same height as the substrate, and is disposed at a position overlapping the insulator layer in a vertical direction. The method of claim 1,
The conductive layer,
A first conductive layer disposed under the first insulator layer and having the same width as the first insulator layer; And
A light emitting device comprising a second conductive layer disposed under the second insulator layer and having the same width as the second insulator layer. delete delete delete delete The method of claim 2,
The heat conductive layer includes a metal layer,
A first heat conductive layer overlapping the first insulator layer in a vertical direction; And
And a second heat conductive layer overlapping the second insulator layer in a vertical direction,
The top surface of the first heat conductive layer is in contact with the first conductive layer,
A light emitting device having a top surface of the second heat conductive layer in contact with the second conductive layer. delete delete The method of claim 2,
The thermally conductive layer includes an air gap,
A first heat conductive layer overlapping the first insulator layer in a vertical direction; And
And a second heat conductive layer overlapping the second insulator layer in a vertical direction,
The lower surface of the first conductive layer is exposed by the first heat conductive layer,
A light emitting device in which a lower surface of the second conductive layer is exposed by the second heat conductive layer. A lighting system comprising a light-emitting module including any one of claims 1, 2, 7 and 10.

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