KR20150088875A - 열 처리 방법 및 장치 - Google Patents

열 처리 방법 및 장치 Download PDF

Info

Publication number
KR20150088875A
KR20150088875A KR1020157017061A KR20157017061A KR20150088875A KR 20150088875 A KR20150088875 A KR 20150088875A KR 1020157017061 A KR1020157017061 A KR 1020157017061A KR 20157017061 A KR20157017061 A KR 20157017061A KR 20150088875 A KR20150088875 A KR 20150088875A
Authority
KR
South Korea
Prior art keywords
energy source
radiation
fluence
radiant energy
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020157017061A
Other languages
English (en)
Korean (ko)
Inventor
브루스 이. 아담스
스티븐 모팻
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20150088875A publication Critical patent/KR20150088875A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H01L21/324—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H01L21/268—
    • H01L21/67115—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Recrystallisation Techniques (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
KR1020157017061A 2012-11-28 2013-11-21 열 처리 방법 및 장치 Ceased KR20150088875A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261730924P 2012-11-28 2012-11-28
US61/730,924 2012-11-28
PCT/US2013/071312 WO2014085201A1 (en) 2012-11-28 2013-11-21 Thermal treatment methods and apparatus

Publications (1)

Publication Number Publication Date
KR20150088875A true KR20150088875A (ko) 2015-08-03

Family

ID=50773664

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157017061A Ceased KR20150088875A (ko) 2012-11-28 2013-11-21 열 처리 방법 및 장치

Country Status (5)

Country Link
US (1) US20140148017A1 (https=)
JP (1) JP2016506067A (https=)
KR (1) KR20150088875A (https=)
TW (1) TWI614346B (https=)
WO (1) WO2014085201A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240003725A (ko) * 2022-07-01 2024-01-09 가부시키가이샤 스크린 홀딩스 열처리 장치
KR20250032969A (ko) * 2023-08-30 2025-03-07 가부시키가이샤 스크린 홀딩스 열처리 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9830409B2 (en) * 2012-04-10 2017-11-28 The Penn State Research Foundation Electromagnetic band gap structure and method for enhancing the functionality of electromagnetic band gap structures
KR20200075531A (ko) * 2018-12-18 2020-06-26 삼성전자주식회사 기판 처리 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2923016B2 (ja) * 1990-09-17 1999-07-26 株式会社日立製作所 薄膜半導体の製造方法及びその装置
JPH05226790A (ja) * 1992-02-18 1993-09-03 Hitachi Ltd レーザアニール装置
JP4472066B2 (ja) * 1999-10-29 2010-06-02 シャープ株式会社 結晶性半導体膜の製造方法、結晶化装置及びｔｆｔの製造方法
JP2002064060A (ja) * 2000-08-22 2002-02-28 Matsushita Electric Ind Co Ltd 非結晶薄膜のレーザーアニール方法とその装置
JP3973849B2 (ja) * 2001-03-09 2007-09-12 住友重機械工業株式会社 レーザアニール方法
JP4397571B2 (ja) * 2001-09-25 2010-01-13 株式会社半導体エネルギー研究所 レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
TWI289896B (en) * 2001-11-09 2007-11-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7521651B2 (en) * 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method
US20070212859A1 (en) * 2006-03-08 2007-09-13 Paul Carey Method of thermal processing structures formed on a substrate
US8148663B2 (en) * 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
JP2010212478A (ja) * 2009-03-11 2010-09-24 Panasonic Corp レーザ加工方法およびレーザ加工装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240003725A (ko) * 2022-07-01 2024-01-09 가부시키가이샤 스크린 홀딩스 열처리 장치
KR20250032969A (ko) * 2023-08-30 2025-03-07 가부시키가이샤 스크린 홀딩스 열처리 장치

Also Published As

Publication number Publication date
US20140148017A1 (en) 2014-05-29
TWI614346B (zh) 2018-02-11
TW201430139A (zh) 2014-08-01
WO2014085201A1 (en) 2014-06-05
JP2016506067A (ja) 2016-02-25

Similar Documents

Publication Publication Date Title
JP5641965B2 (ja) レーザアニール方法及びレーザアニール装置
JP2002205180A5 (ja) レーザ加工方法及びレーザ加工装置
KR101868378B1 (ko) 기판의 어닐링시 열량 관리
WO2014030519A1 (ja) 加工対象物切断方法
WO2014030518A1 (ja) 加工対象物切断方法
KR102096829B1 (ko) 레이저 라인 빔 개선 장치 및 레이저 처리 장치
KR20150088875A (ko) 열 처리 방법 및 장치
KR20140113494A (ko) 펄스형 라인 빔들
JP5541693B2 (ja) レーザアニール装置
JP5246716B2 (ja) 半導体基板の製造方法及びレーザアニール装置
CN106663629A (zh) 扫描脉冲退火装置及方法
JP2012044046A (ja) レーザアニール装置及びレーザアニール方法
JP2016018816A (ja) 不純物導入方法、不純物導入装置及び半導体素子の製造方法
EP2943973B1 (en) Thermal processing by transmission of mid infra-red laser light through semiconductor substrate
JP5800654B2 (ja) レーザアニール装置、及び、レーザアニール方法
KR102557669B1 (ko) 이중 파장 어닐링 방법 및 장치
JP2016518698A (ja) レーザアニールシステムにおいてエッジプロファイルを制御するためのカスタマイズされた瞳ストップ形状
JP2012134228A (ja) レーザアニール方法及びレーザアニール装置
KR20130125438A (ko) 극초단 펄스 레이저의 단일광자 흡수를 이용한 레이저 가공장치
KR20130052062A (ko) 극초단 펄스 레이저의 단일광자 흡수를 이용한 레이저 가공장치
KR102238080B1 (ko) 레이저 어닐 장치 및 방법
JP2014195004A (ja) 半導体素子の製造方法及び半導体素子の製造装置
JP2015115401A (ja) レーザアニール方法およびレーザアニール装置
JP2004152888A (ja) 半導体装置の製造方法及びレーザアニーリング装置
JP2008306211A (ja) 半導体装置の製造方法及びレーザアニーリング装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000