KR20150004818A - 파장 변환 측면 코트를 갖는 발광 장치 - Google Patents
파장 변환 측면 코트를 갖는 발광 장치 Download PDFInfo
- Publication number
- KR20150004818A KR20150004818A KR1020147030414A KR20147030414A KR20150004818A KR 20150004818 A KR20150004818 A KR 20150004818A KR 1020147030414 A KR1020147030414 A KR 1020147030414A KR 20147030414 A KR20147030414 A KR 20147030414A KR 20150004818 A KR20150004818 A KR 20150004818A
- Authority
- KR
- South Korea
- Prior art keywords
- wavelength conversion
- light emitting
- emitting device
- semiconductor light
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261617903P | 2012-03-30 | 2012-03-30 | |
| US61/617,903 | 2012-03-30 | ||
| PCT/IB2013/052390 WO2013144834A1 (en) | 2012-03-30 | 2013-03-26 | Light emitting device with wavelength converting side coat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20150004818A true KR20150004818A (ko) | 2015-01-13 |
Family
ID=48326370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147030414A Ceased KR20150004818A (ko) | 2012-03-30 | 2013-03-26 | 파장 변환 측면 코트를 갖는 발광 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10043952B2 (enExample) |
| EP (1) | EP2831932B1 (enExample) |
| JP (1) | JP6435258B2 (enExample) |
| KR (1) | KR20150004818A (enExample) |
| CN (1) | CN104205374B (enExample) |
| RU (1) | RU2639565C2 (enExample) |
| WO (1) | WO2013144834A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015176960A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 発光装置 |
| CN104953014B (zh) | 2014-03-28 | 2019-01-29 | 深圳光峰科技股份有限公司 | 一种多层结构玻璃荧光粉片及其制备方法及发光装置 |
| KR20150116986A (ko) * | 2014-04-08 | 2015-10-19 | 삼성디스플레이 주식회사 | 퀀텀 도트 시트 및 이를 포함하는 라이트 유닛과 액정 표시 장치 |
| CN106575693B (zh) * | 2014-06-19 | 2020-07-31 | 亮锐控股有限公司 | 具有小源尺寸的波长转换发光设备 |
| US9373761B2 (en) * | 2014-09-23 | 2016-06-21 | Osram Sylvania Inc. | Patterned thin-film wavelength converter and method of making same |
| JP6484982B2 (ja) | 2014-09-30 | 2019-03-20 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| CN104465540A (zh) * | 2014-12-22 | 2015-03-25 | 永新电子常熟有限公司 | 稳定性好的电子芯片 |
| KR20170026801A (ko) * | 2015-08-28 | 2017-03-09 | 삼성전자주식회사 | 반도체 발광소자 패키지 및 이를 이용한 광원모듈 |
| CN107068841A (zh) * | 2017-04-11 | 2017-08-18 | 安徽芯瑞达科技股份有限公司 | 一种五面发光的量子点夹层csp背光源及其制作方法 |
| CN111213249B (zh) * | 2017-08-18 | 2023-10-03 | 奥斯兰姆奥普托半导体有限责任公司 | 半导体器件的生产 |
| TWI658610B (zh) * | 2017-09-08 | 2019-05-01 | Maven Optronics Co., Ltd. | 應用量子點色彩轉換之發光裝置及其製造方法 |
| KR102593592B1 (ko) * | 2018-05-04 | 2023-10-25 | 엘지이노텍 주식회사 | 조명 장치 |
| JP7057508B2 (ja) * | 2019-03-28 | 2022-04-20 | 日亜化学工業株式会社 | 発光装置 |
| JP7283327B2 (ja) | 2019-09-20 | 2023-05-30 | セイコーエプソン株式会社 | 波長変換素子、光源装置及びプロジェクター |
| KR20220112908A (ko) | 2021-02-04 | 2022-08-12 | 삼성전자주식회사 | 반도체 발광장치 |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
| US6351069B1 (en) | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
| US6680569B2 (en) | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
| TW455908B (en) | 1999-04-20 | 2001-09-21 | Koninkl Philips Electronics Nv | Lighting system |
| US6504301B1 (en) | 1999-09-03 | 2003-01-07 | Lumileds Lighting, U.S., Llc | Non-incandescent lightbulb package using light emitting diodes |
| AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
| JP4081985B2 (ja) | 2001-03-02 | 2008-04-30 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
| JPWO2003034508A1 (ja) * | 2001-10-12 | 2005-02-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| US6791116B2 (en) * | 2002-04-30 | 2004-09-14 | Toyoda Gosei Co., Ltd. | Light emitting diode |
| KR101030068B1 (ko) * | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
| JP4337574B2 (ja) | 2003-09-25 | 2009-09-30 | 日亜化学工業株式会社 | 発光装置およびその形成方法 |
| US7052152B2 (en) | 2003-10-03 | 2006-05-30 | Philips Lumileds Lighting Company, Llc | LCD backlight using two-dimensional array LEDs |
| US7102152B2 (en) * | 2004-10-14 | 2006-09-05 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting output light using quantum dots and non-quantum fluorescent material |
| US7250715B2 (en) | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
| US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
| JP4756841B2 (ja) * | 2004-09-29 | 2011-08-24 | スタンレー電気株式会社 | 半導体発光装置の製造方法 |
| US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
| JP4845370B2 (ja) | 2004-11-26 | 2011-12-28 | 京セラ株式会社 | 発光装置および照明装置 |
| JP2006352036A (ja) * | 2005-06-20 | 2006-12-28 | Rohm Co Ltd | 白色半導体発光素子 |
| RU2303833C2 (ru) | 2005-07-26 | 2007-07-27 | Самсунг Электро-Меканикс Ко., Лтд. | Осветительное устройство |
| JP2009512178A (ja) * | 2005-11-04 | 2009-03-19 | パナソニック株式会社 | 発光モジュールとこれを用いた表示装置及び照明装置 |
| WO2007077869A1 (ja) * | 2006-01-04 | 2007-07-12 | Rohm Co., Ltd. | 薄型発光ダイオードランプとその製造方法 |
| US7521862B2 (en) | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
| US8232564B2 (en) * | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
| JP4920497B2 (ja) * | 2007-05-29 | 2012-04-18 | 株式会社東芝 | 光半導体装置 |
| US7942556B2 (en) | 2007-06-18 | 2011-05-17 | Xicato, Inc. | Solid state illumination device |
| EP2191517B1 (en) * | 2007-08-31 | 2017-11-29 | LG Innotek Co., Ltd. | Light emitting device package |
| US7984999B2 (en) | 2007-10-17 | 2011-07-26 | Xicato, Inc. | Illumination device with light emitting diodes and moveable light adjustment member |
| WO2010017523A1 (en) | 2008-08-08 | 2010-02-11 | Xicato, Inc. | Color tunable light source |
| JP5284006B2 (ja) | 2008-08-25 | 2013-09-11 | シチズン電子株式会社 | 発光装置 |
| US7973327B2 (en) * | 2008-09-02 | 2011-07-05 | Bridgelux, Inc. | Phosphor-converted LED |
| CN101673787B (zh) * | 2008-09-12 | 2012-12-12 | 晶元光电股份有限公司 | 半导体发光装置及其封装结构 |
| WO2010035206A1 (en) | 2008-09-25 | 2010-04-01 | Koninklijke Philips Electronics N.V. | Coated light emitting device and method for coating thereof |
| US7804103B1 (en) | 2009-01-07 | 2010-09-28 | Lednovation, Inc. | White lighting device having short wavelength semiconductor die and trichromatic wavelength conversion layers |
| KR101172143B1 (ko) * | 2009-08-10 | 2012-08-07 | 엘지이노텍 주식회사 | 백색 발광다이오드 소자용 시온계 산화질화물 형광체, 그의 제조방법 및 그를 이용한 백색 led 소자 |
| KR101163902B1 (ko) * | 2010-08-10 | 2012-07-09 | 엘지이노텍 주식회사 | 발광 소자 |
| US8104908B2 (en) | 2010-03-04 | 2012-01-31 | Xicato, Inc. | Efficient LED-based illumination module with high color rendering index |
| WO2011139538A2 (en) | 2010-04-26 | 2011-11-10 | Xicato, Inc. | Led-based illumination module attachment to a light fixture |
| DE102010021011A1 (de) * | 2010-05-21 | 2011-11-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung einer Abdeckschicht |
| US20110317397A1 (en) | 2010-06-23 | 2011-12-29 | Soraa, Inc. | Quantum dot wavelength conversion for hermetically sealed optical devices |
| DE102010035490A1 (de) * | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements |
| DE102010053362B4 (de) | 2010-12-03 | 2021-09-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement |
| JP5895598B2 (ja) | 2012-02-29 | 2016-03-30 | 日亜化学工業株式会社 | 発光装置 |
| US9071981B2 (en) | 2012-09-21 | 2015-06-30 | Htc Corporation | Method of monitoring search space of enhanced downlink control channel in orthogonal frequency-division multiple access system |
-
2013
- 2013-03-26 EP EP13721410.2A patent/EP2831932B1/en active Active
- 2013-03-26 RU RU2014143771A patent/RU2639565C2/ru active IP Right Revival
- 2013-03-26 US US14/388,979 patent/US10043952B2/en active Active
- 2013-03-26 CN CN201380018279.XA patent/CN104205374B/zh active Active
- 2013-03-26 JP JP2015502519A patent/JP6435258B2/ja active Active
- 2013-03-26 WO PCT/IB2013/052390 patent/WO2013144834A1/en not_active Ceased
- 2013-03-26 KR KR1020147030414A patent/KR20150004818A/ko not_active Ceased
-
2017
- 2017-08-23 US US15/684,477 patent/US10224466B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| RU2639565C2 (ru) | 2017-12-21 |
| CN104205374A (zh) | 2014-12-10 |
| US10224466B2 (en) | 2019-03-05 |
| EP2831932B1 (en) | 2020-09-30 |
| JP6435258B2 (ja) | 2018-12-05 |
| US10043952B2 (en) | 2018-08-07 |
| EP2831932A1 (en) | 2015-02-04 |
| US20170352788A1 (en) | 2017-12-07 |
| RU2014143771A (ru) | 2016-05-27 |
| JP2015511773A (ja) | 2015-04-20 |
| CN104205374B (zh) | 2020-10-16 |
| US20150060917A1 (en) | 2015-03-05 |
| WO2013144834A1 (en) | 2013-10-03 |
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