KR20140116877A - 소자 구조체 및 소자 구조체의 제조 방법 - Google Patents
소자 구조체 및 소자 구조체의 제조 방법 Download PDFInfo
- Publication number
- KR20140116877A KR20140116877A KR1020147020105A KR20147020105A KR20140116877A KR 20140116877 A KR20140116877 A KR 20140116877A KR 1020147020105 A KR1020147020105 A KR 1020147020105A KR 20147020105 A KR20147020105 A KR 20147020105A KR 20140116877 A KR20140116877 A KR 20140116877A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 202
- 239000011241 protective layer Substances 0.000 claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 124
- 238000007789 sealing Methods 0.000 claims abstract description 44
- 230000002093 peripheral effect Effects 0.000 claims abstract description 26
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 13
- 239000011147 inorganic material Substances 0.000 claims abstract description 13
- 239000011368 organic material Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 239000004925 Acrylic resin Substances 0.000 claims description 17
- 229920000178 Acrylic resin Polymers 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 150000003377 silicon compounds Chemical class 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229920002396 Polyurea Polymers 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 229910001374 Invar Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
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- 238000007740 vapor deposition Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- -1 silicon oxynitride Chemical compound 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000009545 invasion Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
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- 238000003672 processing method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000012466 permeate Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012011520 | 2012-01-23 | ||
JPJP-P-2012-011520 | 2012-01-23 | ||
PCT/JP2012/006938 WO2013111218A1 (ja) | 2012-01-23 | 2012-10-30 | 素子構造体及び素子構造体の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140116877A true KR20140116877A (ko) | 2014-10-06 |
Family
ID=48872997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020147020105A KR20140116877A (ko) | 2012-01-23 | 2012-10-30 | 소자 구조체 및 소자 구조체의 제조 방법 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2013111218A1 (zh) |
KR (1) | KR20140116877A (zh) |
CN (1) | CN104067692A (zh) |
TW (1) | TWI635635B (zh) |
WO (1) | WO2013111218A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015029608A1 (ja) | 2013-08-28 | 2015-03-05 | シャープ株式会社 | エレクトロルミネッセンス装置、及びその製造方法 |
WO2020004086A1 (ja) * | 2018-06-25 | 2020-01-02 | ソニーセミコンダクタソリューションズ株式会社 | 有機el素子および有機el素子の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3975779B2 (ja) * | 2002-03-01 | 2007-09-12 | 株式会社日立製作所 | 有機エレクトロルミネッセンス装置およびその製造方法 |
JP2003282241A (ja) * | 2002-03-25 | 2003-10-03 | Pioneer Electronic Corp | 有機エレクトロルミネッセンス表示パネル及び製造方法 |
JP3729262B2 (ja) * | 2002-08-29 | 2005-12-21 | セイコーエプソン株式会社 | エレクトロルミネセンス装置及び電子機器 |
KR100685845B1 (ko) * | 2005-10-21 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 및 그 제조방법 |
JP4245032B2 (ja) * | 2006-10-03 | 2009-03-25 | セイコーエプソン株式会社 | 発光装置および電子機器 |
KR100873704B1 (ko) * | 2007-06-13 | 2008-12-12 | 삼성모바일디스플레이주식회사 | 유기 전계 발광표시장치 및 그의 제조방법 |
KR101001552B1 (ko) * | 2009-01-20 | 2010-12-17 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
JP2011040173A (ja) * | 2009-08-06 | 2011-02-24 | Sharp Corp | 有機エレクトロルミネセンス装置 |
JP5197666B2 (ja) * | 2010-03-23 | 2013-05-15 | 株式会社東芝 | 有機発光装置、照明装置、表示装置及び有機発光装置の製造方法 |
-
2012
- 2012-10-30 KR KR1020147020105A patent/KR20140116877A/ko not_active Application Discontinuation
- 2012-10-30 CN CN201280067681.2A patent/CN104067692A/zh active Pending
- 2012-10-30 JP JP2013555006A patent/JPWO2013111218A1/ja active Pending
- 2012-10-30 WO PCT/JP2012/006938 patent/WO2013111218A1/ja active Application Filing
- 2012-11-07 TW TW101141296A patent/TWI635635B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPWO2013111218A1 (ja) | 2015-05-11 |
CN104067692A (zh) | 2014-09-24 |
TW201332176A (zh) | 2013-08-01 |
TWI635635B (zh) | 2018-09-11 |
WO2013111218A1 (ja) | 2013-08-01 |
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