KR20140100903A - Manufacturing device of organic el device and method of manufacturing organic el device - Google Patents

Abstract

The present invention is to provide an apparatus or a method for manufacturing an organic EL device capable of forming a high-definition pixel with a proper position, a size, and a shape. The method of the present invention includes the steps of applying a predetermined first magnetic field strength on a mask of a magnetic body to adhere a mask to a substrate to be deposited; adhering the mask to the substrate to be deposited with a second magnetic field strength stronger than the first magnetic field strength after a lapse of a predetermined time; and depositing a deposition material to the substrate to be deposited through the mask in a vacuum state.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic EL device manufacturing apparatus and a method of manufacturing an organic EL device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL device manufacturing apparatus and a method of manufacturing an organic EL device, and more particularly, to an organic EL device manufacturing apparatus and an organic EL device manufacturing method which can deposit high definition on a panel.

The organic EL display is a display using a panel in which an organic substance (luminous body) having a property of emitting light by itself is divided and applied to each of R (red), G (green) and B (blue). The pixel division coating method of the organic EL panel includes a " deposition method " for depositing an evaporation material on an organic EL panel and a " coating method " for dropping RGB inks at a target location. The present invention relates to a " deposition method "

The panel is manufactured by depositing an organic material very thinly on a transparent electrode called indium-tin oxide (ITO) formed on a glass substrate and sandwiching it between electrodes. In the organic EL device manufacturing process, pixel division coating of RGB is performed mainly by using a mask in a vacuum state. Representative examples of the mask include those formed with very fine openings (100 탆 or less), but those having very minute strips are arranged at a minute pitch (about 50 탆).

These masks are made of a magnetic material, and magnets are arranged on the back surface of the stage, which is a glass holder for placing the glass. The glass placed on the stage is sandwiched between the mask and the magnet on the back surface of the stage, ) Can be applied.

As described above, pixel-division coating is performed using this mask. However, when there is a minute gap between the mask and the glass, one pixel is blurred and the pixel becomes incomplete. A panel in which a pixel is incomplete causes a decrease in luminance or a number of pixels. There are many reasons for defects of the organic EL panel, but one of them is caused at the time of the pixel division coating deposition.

Therefore, as a first improvement measure for improving the gap between the mask and the glass, a horizontal method in which the mask and the stage are horizontally installed and the mask is brought into close contact with its own weight is now the mainstream. As a second improvement measure, there is a method of adjusting the flatness (flatness) of the stage with high precision. As a third improvement measure, there is a method in which a mask, which is a magnetic body, and a stage are kept in a standing state, a magnet on the back surface of the stage is continuously brought close to the mask, and the mask is brought into close contact with the substrate holder (stage) have.

Japanese Patent Application Laid-Open No. 2004-079349

The size of a pixel formed by the " deposition method " is several tens of 탆, and a technique of highly precise positional accuracy and pixel size at the time of pixel division coating is required. If the film is not formed in the size, shape, or film thickness that the pixel should be present, the organic EL panel becomes defective. A major cause of defective organic EL panel is that, when a pixel is divided and applied to a glass using a mask, the pixel is blurred to form a film, and the pixel becomes incomplete. The reason for this is that there is a gap between the mask and the glass at the time of film formation to form an incomplete pixel. As a result, the adhesion between the mask and the glass becomes a key point in sharp pixel formation without fading. The reason why there is no blurring is that in the formation of a high-definition pixel, the pixel is formed in a position, a size, and a shape in which the pixel should be present, and the cause of deterioration of the adhesion between the mask and the glass is that the mask is twisted, From a predetermined state to be flattened. Hereinafter, deformation from a predetermined state to be flat is simply referred to as deformation.

To improve the adhesion between the mask and the glass, there is a method of increasing the magnetic force of the magnet provided on the back surface of the stage. For example, in the above-described horizontal method, alignment of the mask and glass is performed while reducing warpage by the magnetic force of the magnets in order to reduce warpage of the mask and glass as the size of the organic EL panel increases. However, at that time, if the magnetic force is pulled by the strong magnetic force, there is a fear that the mask is affected by the magnetic force and deformed or broken.

The mask has a so-called mask having an opening for depositing with high precision and a frame (reference numeral 16a shown in Fig. 3) for fixing a so-called mask, and a so-called mask is positioned and fixed to the frame with very high precision . However, there is a possibility that the fixation may fall due to a strong magnetic field. In the following description, so-called masks are denoted by masks unless otherwise specified.

As mentioned above, it should be fully taken into consideration that the simple magnetic force strengthening causes the mask to break in the alignment of the mask and the glass.

Further, since the mask is formed at a fine pitch, the arrangement is disturbed by a strong magnetic field. For this reason, it is important to adhere closely by a magnetic contact method in which the arrangement is not disturbed by the magnetic field. However, in the third improvement, there is a possibility that the mask is disturbed by the magnetic field during the approach to bring the magnets on the back surface of the stage close to the mask continuously.

Further, in the horizontal method as the first improvement measure, the footprint (installation area) becomes large, and problems arise for enlargement. In the second improvement measure, due to the limitation of the processing accuracy and the limitation of the adjustment method, the organic EL panel becomes a large wall in the enlargement of the organic EL panel as the first improvement measure.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an organic EL device manufacturing apparatus or an organic EL device manufacturing method capable of forming a film in a position, size, and form in which a pixel should exist in high definition pixel formation.

In order to achieve the above object, the present invention has at least the following features.

The present invention relates to a method for manufacturing a mask, which comprises applying a predetermined first magnetic force to a mask of a magnetic body, bringing the mask into close contact with a substrate to be vaporized, and, after a predetermined elapsed time, Is deposited on the substrate to be vapor-deposited, and the deposition material is vapor-deposited on the substrate to be vapor-deposited through the mask in a vacuum state.

According to another aspect of the present invention, there is provided a vacuum evaporation apparatus including a vacuum chamber, an evaporation source disposed in the vacuum chamber for evaporating an evaporation material on a evaporation source substrate, a mask of a magnetic substance provided between the evaporation source and the evaporation source substrate, 1 < / RTI > strength, and the mask is brought into intimate contact with the evaporated substrate, and after a predetermined elapsed time, the mask is brought into close contact with the evaporated substrate at a second magnetic force intensity higher than that of the first magnetic force, And means for providing a control signal.

The first magnetic force intensity may be a magnetic field strength to a degree that the deformation of the mask falls within a predetermined range, and the second magnetic force intensity may be a magnetic field strength required to obtain a predetermined high-definition pixel.

The first magnetic force intensity may be 80 to 200 G, and the second magnetic force intensity may be 180 to 500 G.

The first magnetic force intensity and the second magnetic force intensity may be obtained on the basis of a previously obtained relationship between a position of a plurality of permanent magnets provided on a side opposite to the evaporated substrate with respect to the mask.

The first magnetic force intensity and the second magnetic force intensity may be obtained on the basis of a previously obtained relationship between a current of a plurality of electromagnets provided on a side opposite to the evaporation donor substrate with respect to the mask.

The first magnetic force intensity and the second magnetic force intensity may be measured by measuring the magnetic force intensity in the mask and measuring the magnetic force intensity of the plurality of permanent magnets provided on the opposite side of the mask to the mask based on the measurement result And may be obtained by controlling the position with the mask.

Wherein the first magnetic force intensity and the second magnetic force intensity are obtained by measuring a magnetic force intensity in the mask and controlling a current of a plurality of electromagnets provided on the opposite side of the mask from the mask with respect to the mask .

According to the present invention, in a method using a high-definition pixel division coating method using a mask, a problem that a pixel is incomplete is solved, a sharp pixel is formed, and a high-quality organic EL device manufacturing apparatus or an organic EL device manufacturing method Can be provided.

As a result of the above, first, it is possible to provide an organic EL device device or a method of manufacturing an organic EL device in which the mask is not damaged. Secondly, it is possible to provide an organic EL device device or a method of manufacturing an organic EL device having a low defect rate and a higher productivity.

1 is a view showing an example of a laminated structure of an organic EL device.
2 is a configuration diagram of an organic EL device device which is an embodiment of the present invention.
Fig. 3 shows a first embodiment of the two-step adhesion means, which is a feature of the present embodiment, and is a configuration diagram of the deposition chamber viewed from the direction of arrow A in Fig.
4 is a configuration diagram of an evaporation source in an embodiment of the present invention.
Fig. 5 is a view showing an example of a conveying state in which a vapor-deposited substrate is conveyed between the chambers in a process before the organic EL vapor deposition.
6 is a diagram showing a state in which alignment treatment is performed while maintaining a certain distance between a vapor-deposited substrate and a mask in the embodiment of the present invention.
Fig. 7 is a view showing the state of the substrate to be vapor-deposited and the mask in the alignment treatment.
Fig. 8 is a view for explaining an adhesion process flow in which the mask and the vapor-deposited substrate, which are features of this embodiment, are brought into close contact with each other by magnetic force.
Fig. 9 is a view showing a state in which the physical gap between the substrate to be vapor-deposited and the mask is removed after the alignment of the vapor-deposited substrate with the mask in the first embodiment of the two-step adhesion means, which is a feature of this embodiment.
10 is a diagram showing a state in which the magnet base is moved to a proper magnetic force strength position which does not affect the mask in the first embodiment of the two-stage contact means, which is a feature of the present embodiment.
11 is a view showing a state in which the magnet base is moved to a deposition adhesion strength position in which the vapor-deposited substrate and the mask are adhered more strongly in the first embodiment of the two-stage adhesion means, which is a feature of the present embodiment.
12 is a view showing a second embodiment of the two-stage contact means, which is a feature of the present embodiment.
13 is a view showing a third embodiment of the two-stage contact means, which is a feature of the present embodiment.

An embodiment of an organic EL device production apparatus of the present invention will be described with reference to Figs. 1 to 10. Fig. 1 is a view showing an example of a laminated structure of an organic EL device. The laminated structure of the organic EL includes a hole injection layer 6, a hole transport layer 5, an electron injection layer 2 and an electron transport layer 3, a cathode 1 sandwiched therebetween, , And an anode (7) are laminated on the evaporation donor substrate (12) in the form of a thin film.

Here, the configuration of the organic EL device device 100, which is an embodiment of the present invention, will be described with reference to FIG. An example of a manufacturing apparatus for depositing an evaporation material in a vacuum state on a evaporation donor substrate 12 which is a glass substrate to be processed by a " deposition method "

The organic EL device device 100 according to the present embodiment includes a load lock chamber 9 for loading and unloading a vapor-deposited substrate 12, a deposition chamber 11 for depositing the vapor-deposited substrate 12, A transfer chamber 13 for transferring the evaporated substrate 12 between the load lock chamber 9 and the deposition chamber 11 and a control device 30 for controlling them.

The load lock chamber 9 has a gate valve 10 on the atmosphere side so as to be evacuated from the atmosphere. The transfer chamber 13 has a transfer robot 14 for transferring the substrate 12 to be vapor-deposited. The organic EL device device 100 further includes a gate valve 10 between the load lock chamber 9 and the transfer chamber 13 and between the transfer chamber 13 and the deposition chamber 11. The organic EL device device 100 is capable of maintaining the vacuum of each chamber while controlling the opening and closing of the gate valve 10 and is capable of maintaining the vacuum in each of the transfer chamber 13 and the deposition chamber 11, (12) is exchanged.

The constitution of the deposition chamber 11 differs depending on the deposition material, but the deposition is performed by heating the deposition material in the crucible in a vacuum deposition chamber 11 and injecting it from the crucible.

In this way, deposition materials necessary for the organic EL device are deposited in the respective deposition chambers 11, but in particular, deposition chambers for forming an organic deposition material for high-definition pixel formation will be described as an example. Fig. 3 shows a first embodiment of a two-step adhesion means, which is a feature of this embodiment, which will be described later, and is a configuration diagram of the deposition chamber 11 of the example in the direction of arrow A in Fig. The organic EL device device 100 according to the present embodiment performs deposition of an evaporation material necessary for manufacturing an organic EL device in the evaporation chamber 11. [

The deposition chamber 11 includes an evaporation source 15 for evaporating the organic vapor deposition material, a mask 16, a stage 17 for placing the evaporation substrate 12, a base Magnet base 18). The evaporation source 15 is moved up and down in the drawing by the up-and-down moving mechanism 25, and is formed over the entire surface of the evaporation substrate 12. [ The magnet base 18 is provided with a guide mechanism 19 capable of vertical movement with respect to the stage back surface 17a and permanent magnets not shown are arranged in the magnet base 18 so as to make the magnetic force density in the mask uniform have. In the following description, an electromagnet may be used in addition to the permanent magnet, and a permanent magnet or an electromagnet is collectively referred to as a magnet.

Here, the structure of the evaporation source 15 will be described with reference to FIG. 4, and the "evaporation method" will be described with reference to FIG. 3 and FIG. The evaporation source 15 includes a heater 20 for heating, a crucible 21 filled with a target organic vapor deposition material, and a temperature measuring device 22 for measuring the temperature in the crucible, And has a structure provided in the deposition box 23 provided therein.

In the vapor deposition, a current is supplied to the heater 20 to generate heat, the crucible 21 is heated by the heat, the organic vapor deposition material in the crucible 21 is evaporated, and the vapor is supplied to the nozzle 24 To form a thin film to be opposed to the evaporation donor substrate 12 from the front side.

Next, the steps before the organic EL vapor deposition to realize the present embodiment will be described with reference to FIGS. 5 to 7. FIG. 5 is a view showing an example of a conveying state in which the evaporated substrate 12 is conveyed between the chambers in the process before the organic EL deposition. The evaporated substrate 12 is carried into the load lock chamber 9 as shown by the broken line and is then placed on the stage 17 of the deposition chamber 11 via the transfer chamber 13 as indicated by the solid line do.

As shown in Fig. 6, the deposition target substrate 12 mounted on the stage 17 is subjected to alignment treatment while maintaining a certain distance from the mask 16. [ The alignment process described above is a process for highly accurately aligning the transported substrate 12 with respect to the mask 16 placed in the correct position. More specifically, as shown in Fig. 7, the substrate alignment marks 12m provided at the four corners of the processed substrate are arranged as far as possible in the center of the window-shaped mask alignment mark 16m provided at the corresponding position of the mask 16 The posture of the evaporated substrate 12 is controlled so that the deposition of the evaporated substrate 12 is performed.

Here, the posture of the evaporated substrate 12 is controlled at the correct position of the mask 16, but conversely, the posture of the mask 16 may be controlled at the correct position of the evaporated substrate 12.

In this alignment process, when the evaporation substrate 12 and the mask 16 are relatively operated as described in the problem, if the influence of the magnetic force is applied, the arrangement of the mask 16 may be disturbed, have. This effect is stronger as the magnetic force is stronger. 6, in the alignment process, the deposition target substrate 12 has a certain distance L0 from the mask 16 so that it can be aligned regardless of the influence of the magnetic force received by the mask 16 It is carried out in a state where it is maintained.

Fig. 8 is a view for explaining a close-contact processing flow in which the mask 16 and the vapor-deposited substrate 12 are closely adhered to each other by the magnetic force, which is a feature of the present embodiment.

9, after the alignment of the evaporated substrate 12 and the mask 16 is completed, the evaporated substrate 12 and the mask 16 are physically brought into contact with each other, And the mask 16 is removed (S1). This contact treatment is also carried out in a state in which there is no influence of the magnetic force of the magnet on the mask 16.

Here, the magnet and the mask 16 provided on the magnet base 18 in the present embodiment will be described. This magnet is made to be powerful with magnetic force of several thousand Gauss.

As described above, in the case where the substrate 12 and the mask 16 are relatively operated in the alignment treatment and the contact treatment of the vapor-deposited substrate 12 and the mask 16 from the high-definition one, There is a possibility that the mask 16 may be damaged. In addition, it is impossible to deny that there is a possibility that the mask is deformed by tightly adhering it once by strong magnetic force. On the other hand, at the time of film formation (deposition), formation of high-definition pixels on the evaporation substrate 12 becomes incomplete unless the deposition target substrate 12 and the mask 16 are more strongly adhered to each other.

Therefore, the fact that the magnetic force acts on the mask 16 requires an appropriate magnetic force at any appropriate timing, and must be performed by an appropriate contact method. Therefore, in the adhesion process of the present embodiment, not only a strong magnetic force of several thousand Gauss is given at once, but also a magnetic force is given to the mask 16 in two steps. In the first step, the mask 16 is raised to a proper magnetic force strength suitable for deformation of the mask 16 to fall within a predetermined range, and is brought into close contact once (S2). The appropriate magnetic force strength depends on the configuration of the mask 16, the stage 17, and the like, but can be obtained by experiment or simulation if their configuration is determined. For example, in the present embodiment, the optimum magnetic force strength is about 80 to 200 G.

Then, once adhesion is obtained with an appropriate magnetic force strength, it is learned that stable adhesion can be obtained thereafter. Therefore, the contact is made in a state in which the deformation of the mask is not caused by the appropriate magnetic force in the first step, After the lapse of the elapsed time, the adhesion strength necessary for film formation in the second step is further raised (S3). For example, in this embodiment, the film adhesion strength is about 180 to 500G.

After the physical contact between the mask 16 and the evaporated substrate 12 as described above, the control device 30 performs the control of the two-step adhesion method in which the mask 16 is divided into two steps and a magnetic force is applied thereto.

According to the two-step adhesion method described above, the problem that the pixels are incomplete can be solved, sharp pixels can be formed, and a high-quality organic EL device manufacturing method can be provided.

As a result, firstly, it is possible to provide an organic EL device manufacturing method which does not break the mask. Secondly, it is possible to provide a method of manufacturing an organic EL device having a low defect rate and a high productivity.

Hereinafter, an example of a two-step contact means for realizing a two-step contact method and a close contact method in the two-step contact means will be described.

(Embodiment 1)

3 is a view showing a first embodiment of the two-step contact means. The two-step contact means includes a magnet base 18 provided on the stage back surface 17a side, a plurality of permanent magnets arranged on the magnet base 18 so as to equalize magnetic force density, a magnet base 18 and a stage 17 And a guide mechanism 19 capable of vertically moving with respect to the back surface of the stage for changing the distance between the stage 16 and the stage 16 (mask 16). For example, the arrangement of the permanent magnets may be arranged evenly in the region of the magnet base 18 slightly widened slightly with respect to the mask so as to correct the end effect of lowering the magnetic force at the end of the mask, . Of course, if the end effect can be neglected, it may be simply arranged evenly.

With such a configuration, the magnet base 18 is brought close to the stage back surface 17a (mask 16) by the guide mechanism 19, whereby the magnetic force of the permanent magnet to the mask 16, which is a magnetic body, The degree to which the mask 16 is attracted to the permanent magnet of the magnet base 18 is changed to change the degree of contact between the mask 16 and the evaporated substrate 12.

The guide mechanism 19 is position-controllable, and the magnet base 18 can be controlled at an arbitrary position. Therefore, the position of the magnet base 18 to which the proper magnetic force intensity and the film adhesion strength are given is made to correspond in advance. And the positions of the magnet base 18 to which the proper magnetic force strength and the film adhesion strength are given are set as the optimum magnetic force strength position L1 and the film adhesion strength position L2, respectively.

Therefore, in the first embodiment, after the vapor-deposited substrate 12 and the mask 16 are physically brought into contact with each other from the state of Fig. 6 to Fig. 9, first, as shown in Fig. 10, The base 18 is moved to a proper magnetic force strength position L1 which does not affect the deformation of the mask. The moving speed of the magnet base 18 may be a constant speed, for example, the speed may be varied with respect to a distance, for example, the speed is initially increased and the speed is decreased toward the optimum magnetic force strength position L1.

After reaching the appropriate magnetic force strength position L1, the movement of the magnet base 18 is once stopped, and then, as shown in Fig. 11, the magnet base 18 is moved to the film adhesion strength position L2. The moving speed of the magnet base 18 at this time may be a constant speed as in the case of the optimum magnetic force strength position L1 and may be set to a constant speed relative to the distance such as the speed at the beginning and the speed closer to the film adhesion strength position L2 May be variable.

(Second Embodiment)

12 is a view showing a second embodiment of the two-step contact means. The two-step contact means of the second embodiment is different from the two-step contact means of the first embodiment in that the magnet base 18D is fixed to the stage back surface 17a at a position distant from the back surface of the stage, And an electromagnet is arranged in place of the permanent magnet on the base 18D. In the second embodiment, the current flowing through the electromagnet is controlled by the control device 30 to change the magnetic force strength, and obtain the optimum magnetic force strength and the film-attached magnetic force strength. The arrangement of the electromagnets is also included, and the other points are the same as those in the first embodiment.

(Third Embodiment)

13 is a view showing a third embodiment of the two-step contact means. The two-step contact means of the third embodiment is provided with a magnetometer 26 for measuring and detecting the magnetic force in the mask in the two-step contact means of the first and second embodiments. 13 is a diagram in which a magnetometer 26 is installed in the first embodiment as an example. In the first and second embodiments, the control is performed so as to be a predetermined position or current, but open control is performed on the magnetic force strength. In the third embodiment, by directly measuring the magnetic force, the control of the proper magnetic force and the film adhesion magnetic force is controlled by the direct feedback control on the magnetic field strength.

The position at which the magnetometer 26 is provided is set in a frame 16a for fixing a so-called mask or so-called mask in the vicinity of a corner portion of a so-called mask 16, which has no end effect or can be ignored, .

In the above description of the embodiment, a high-definition mask is taken as an example of the mask 16 in particular, but it is also applicable to a generally open sphere mask and other masks which are widely used for forming a common layer.

According to the embodiment described above, the two-step adhesion method of dividing the deposition into two stages has been described. However, the first step of obtaining the proper magnetic force strength may be divided into a plurality of steps so as to prevent deformation more reliably. However, in order to avoid troubles, it is preferable to divide by 2 or 3.

According to the embodiments described above, it is possible to provide an organic EL device manufacturing apparatus and an organic EL device manufacturing method capable of solving the problem that a pixel is incomplete, forming a sharp pixel, and realizing a higher quality image.

Although the organic EL device has been described above as an example, the present invention is also applicable to a deposition apparatus that performs deposition processing in the same background as the organic EL device.

1: cathode
2: electron injection layer
3: electron transport layer
4: light emitting layer
5: hole transport layer
6: Hole injection layer
7: anode
9: Load lock chamber
10: Gate valve
11: Deposition chamber
12: Deposited substrate
13: Transfer chamber
14: Transfer robot
15: evaporation source
16: Mask
17: stage
18: Magnet base
19: guide mechanism
20: Heater
21: Crucible
22: Temperature measuring instrument
23: Deposition Box
24: Nozzle
25: Up-and-down movement mechanism
26: Magnetometer
30: Control device
100: organic EL device device

Claims (14)

A predetermined first magnetic force strength is applied to the mask of the magnetic body, the mask is brought into close contact with the evaporation substrate,
After the predetermined elapsed time, the mask is brought into close contact with the evaporated substrate at a second magnetic force intensity higher than the first magnetic force strength,
And depositing an evaporation material on the evaporated substrate through the mask in a vacuum state. The method according to claim 1,
Wherein the first magnetic force intensity is a magnetic field strength at which the deformation of the mask falls within a predetermined range,
Wherein the second magnetic force intensity is a magnetic field strength required to obtain a predetermined high-definition pixel. 3. The method according to claim 1 or 2,
The first magnetic force intensity is 80 to 200 G,
And the second magnetic force intensity is 180 to 500G. 3. The method according to claim 1 or 2,
Wherein the first magnetic force intensity and the second magnetic force intensity are determined by a relationship obtained in advance between the position of the plurality of permanent magnets provided on the side opposite to the evaporated substrate with respect to the mask and the mask, Wherein the organic EL device is obtained on the basis of a relationship between the organic EL device and the organic EL device. 3. The method according to claim 1 or 2,
Wherein the first magnetic force intensity and the second magnetic force intensity measure the magnetic force intensity in the mask,
Based on a result of the measurement, a position of a plurality of permanent magnets provided on a side opposite to the evaporation donor substrate with respect to the mask or a current of a plurality of electromagnets. 5. The method of claim 4,
Wherein the position or the current is changed at a constant speed or is made to approach the first magnetic force intensity and the second magnetic force intensity to slow the rate of change. 6. The method of claim 5,
Wherein the position or the current is changed at a constant speed or is made to approach the first magnetic force intensity and the second magnetic force intensity to slow the rate of change. 3. The method according to claim 1 or 2,
Characterized in that the first magnetic force intensity is further divided into a plurality of sets and the mask is brought into close contact with the evaporation substrate at a magnetic force intensity set in division so as to be brought into close contact with the next magnetic force intensity after a predetermined elapsed time, Gt; to < / RTI > A vacuum chamber,
An evaporation source disposed in the vacuum chamber and evaporating an evaporation material on the evaporation source substrate;
A mask of a magnetic substance provided between the evaporation source and the evaporation donor substrate,
The mask is brought into close contact with the evaporated substrate, a predetermined first magnetic force is applied to the mask, the mask is brought into close contact with the evaporated substrate, and after a predetermined elapsed time, Two-step contact means
Wherein the organic EL device manufacturing apparatus comprises: 10. The method of claim 9,
Wherein the first magnetic force intensity is a magnetic field strength at which the deformation of the mask falls within a predetermined range,
Wherein the second magnetic force intensity is a magnetic field strength required to obtain a predetermined high-definition pixel. 11. The method according to claim 9 or 10,
The two-step contact means includes a magnet base provided on a side of the mask opposite to the evaporation donor substrate, the magnet base having a plurality of permanent magnets, and a magnetic field sensor for detecting a magnetic field strength in a mask at the position of the magnet base And a control means for moving the position of the magnet base and obtaining the first magnetic force intensity and the second magnetic force intensity based on the obtained relationship. 11. The method according to claim 9 or 10,
The two-step contact means includes a magnet base provided on a side of the mask opposite to the evaporation donor substrate, the magnet base having a plurality of electromagnets, and a magnetic field sensor for detecting a current of the plurality of electromagnets and a magnetic strength in the mask at that time And control means for controlling the current to obtain the first magnetic force intensity and the second magnetic force intensity on the basis of the relationship. 11. The method according to claim 9 or 10,
The two-step contact means includes a magnet base provided on the side of the mask opposite to the evaporation donor substrate, the magnet base having a plurality of permanent magnets, a magnetometer for measuring the magnetic force strength of the mask, And a control means for moving the position of the magnet base and obtaining the first magnetic force intensity and the second magnetic force intensity on the basis of the first magnetic force intensity and the second magnetic force intensity. 11. The method according to claim 9 or 10,
The two-step contact means includes a magnet base provided on the opposite side of the mask to the mask from the evaporation substrate, the magnet base having a plurality of electromagnets, a magnetometer for measuring the magnetic force strength of the mask, And control means for controlling the current to obtain the first magnetic force intensity and the second magnetic force intensity.

Images