CN111621741A - Alignment device and method, film forming device and method, method for manufacturing electronic device, recording medium, and program - Google Patents

Alignment device and method, film forming device and method, method for manufacturing electronic device, recording medium, and program Download PDF

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Publication number
CN111621741A
CN111621741A CN202010114406.8A CN202010114406A CN111621741A CN 111621741 A CN111621741 A CN 111621741A CN 202010114406 A CN202010114406 A CN 202010114406A CN 111621741 A CN111621741 A CN 111621741A
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Prior art keywords
mask
substrate
alignment
thickness information
moving
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CN202010114406.8A
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Chinese (zh)
Inventor
小林康信
菅原洋纪
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Abstract

The invention relates to an alignment apparatus, a film forming apparatus, an alignment method, a film forming method, a method for manufacturing an electronic device, a recording medium, and a program. A reduction in alignment accuracy due to individual differences in masks is suppressed. The alignment device is provided with a control unit for controlling a movement mechanism and a position adjustment mechanism, and a thickness information acquisition member for acquiring thickness information of a mask (220), wherein the movement mechanism moves at least one of a substrate (10) and the mask (220) in a first direction to cause the substrate (10) and the mask (220) to approach or separate from each other, the position adjustment mechanism adjusts the relative position between the substrate (10) and the mask (220), and the control unit controls the movement mechanism based on the thickness information of the mask acquired by the thickness information acquisition member.

Description

Alignment device and method, film forming device and method, method for manufacturing electronic device, recording medium, and program
Technical Field
The invention relates to an alignment apparatus, a film forming apparatus, an alignment method, a film forming method, a method for manufacturing an electronic device, a recording medium, and a program.
Background
In recent years, organic EL display devices have attracted attention as flat panel display devices. Organic EL display devices are superior to liquid crystal panel displays in characteristics such as response speed, viewing angle, and reduction in thickness as self-luminous displays, and are rapidly replacing conventional liquid crystal panel displays in monitors, televisions, various portable terminals typified by smartphones, and the like. In addition, the application field thereof is also expanded to displays for automobiles and the like.
An organic light-emitting element (organic EL element; OLED) constituting an organic EL display device has a basic structure in which an organic layer that emits light is formed between two opposing electrodes (cathode electrode, anode electrode). The organic layer and the electrode metal layer of the organic EL element are manufactured by forming a film forming substance on a substrate through a mask in which a pixel pattern is formed in a vacuum chamber. In order to form a film forming material in a desired pattern at a desired position on a substrate, it is necessary to precisely adjust the relative position between a mask and the substrate before forming a film on the substrate.
As an alignment method for adjusting the relative position between the substrate and the mask, the following methods are known: as in the technique disclosed in patent document 1, marks for position adjustment (alignment) are formed on the substrate and the mask, the alignment marks are photographed by a camera provided in the film forming apparatus, and the substrate or the mask is relatively moved based on the photographed images so that the alignment marks of the substrate and the mask are in a predetermined positional relationship.
In such an alignment method, generally, the substrate and the mask are separated from each other and opposed to each other, and a horizontal position deviation between the substrate and the mask is adjusted by a relative movement. Next, the substrate and the mask are brought into close contact with each other by using a magnet plate or the like as necessary, thereby preparing for film formation on the substrate through the mask.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2006 and 176809
Problems to be solved by the invention
In the film deposition apparatus using the mask, after alignment is performed in a state where the mask and the substrate are separated from each other, the aligned substrate is moved and placed on the mask, thereby completing preparation for film deposition. In this case, when the aligned substrate is placed on the mask, the substrate must be placed while maintaining the positional relationship without causing a relative position between the substrate and the mask to be shifted again after the position adjustment in the alignment step. Therefore, it is preferable that the substrate and the mask are first brought into close proximity to each other as much as possible while maintaining the alignment between the substrate and the mask, and then the substrate is finally placed on the mask. That is, it is preferable that the substrate after completion of the positional shift adjustment is moved down toward the mask (or the mask is moved up relatively), and then the substrate is moved to a position as close to the mask as possible with respect to the mask, and then the substrate is moved to the mounting operation.
However, the masks used in the film formation process are generally different from mask to mask. As a result of intensive studies, the present inventors have found that such individual differences between masks, particularly, the thicknesses of masks, are different for each mask, and this causes a reduction in alignment accuracy. That is, as described above, the substrate whose positional shift has been adjusted in the alignment step is preferably moved to a position as close to the mask as possible before being placed on the mask, but if the amount of movement by which the aligned substrate is moved toward the mask is set to a fixed value without taking individual differences (differences in thickness) between the masks into account, it is known that the adjusted positional relationship between the substrate and the mask may be shifted again by the mask in the process of being placed on the mask after the alignment is completed.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object thereof is to suppress a decrease in alignment accuracy due to individual differences in masks.
Means for solving the problems
The present invention adopts the following means to solve the above problems.
That is, an alignment apparatus according to the present invention is an alignment apparatus for aligning a mask and a substrate, the alignment apparatus including:
a moving mechanism that moves at least one of the substrate and the mask in a first direction to bring the substrate close to or away from the mask;
a position adjustment mechanism that moves at least one of the substrate and the mask in at least one of a second direction intersecting the first direction and a third direction intersecting the first direction and the second direction, and adjusts a relative position between the substrate and the mask;
a control unit that controls the moving mechanism and the position adjustment mechanism; and
a thickness information acquiring means that acquires thickness information of the mask,
the control unit controls the moving mechanism based on the thickness information of the mask acquired by the thickness information acquiring unit.
Effects of the invention
As described above, it is possible to suppress a decrease in alignment accuracy due to individual differences in masks.
Drawings
Fig. 1 is a schematic diagram of a part of a production line of an organic EL display device.
FIG. 2 is a schematic view of a film forming apparatus.
Fig. 3 is a schematic view of the substrate supporting unit.
Fig. 4(a) to (c) are views for explaining the first alignment step.
Fig. 5(a) to (d) are diagrams showing the substrate transfer and clamping method after the first alignment step is completed.
Fig. 6(a) to (d) are views for explaining the second alignment step.
Fig. 7(a) to (c) are diagrams showing the substrate transfer and clamping method after the second alignment step.
Fig. 8 is an example of an association table associating mask identifiers with mask thickness information.
Fig. 9(a) and (b) are an overall view of the organic EL display device and a cross-sectional view of elements of the organic EL display device.
Description of the reference numerals
10 base plate
220 mask
250 substrate Z actuator (moving mechanism)
270 control part
280 mask thickness information acquiring member
Detailed Description
Preferred embodiments and examples of the present invention will be described below with reference to the accompanying drawings. However, the following embodiments and examples merely illustrate preferred configurations of the present invention by way of example, and the scope of the present invention is not limited to these configurations. In the following description, the scope of the present invention is not limited to the hardware configuration and the software configuration of the apparatus, the process flow, the manufacturing conditions, the dimensions, the materials, the shapes, and the like unless otherwise specified.
The present invention relates to a technique for performing highly accurate position adjustment of a substrate. The present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern on a surface of a substrate by vacuum deposition or sputtering. As a material of the substrate, any material such as glass, resin, metal, or the like can be selected, and as a film formation material, any material such as an organic material, an inorganic material (metal, metal oxide, or the like) can be selected. Specifically, the technique of the present invention can be applied to manufacturing apparatuses for organic electronic devices (e.g., organic EL display devices, thin-film solar cells), optical components, and the like. Among these, the manufacturing apparatus of the organic EL display device is one of preferable application examples of the present invention because further improvement of alignment accuracy between the substrate and the mask and further reduction of time required for the alignment process between the substrate and the mask are required due to the increase in size of the substrate and the high definition of the display panel.
< production line of electronic device >
Fig. 1 is a plan view schematically showing a part of the structure of a production line of electronic devices. The production line of fig. 1 is used, for example, for manufacturing a display panel of an organic EL display device for a smart phone. In the case of a display panel for a smartphone, for example, a plurality of small-sized panels are produced by forming organic EL films on substrates having a size of about 1800mm × 1500mm or about 900mm × 1500mm, and then cutting the substrates. As shown in fig. 1, a film formation group 1 in a production line of an organic EL display device generally includes: a plurality of film forming chambers 110 for performing processes (e.g., film formation) on the substrate 10, a mask stocker 120 for storing masks before and after use, and a transfer chamber 130 disposed at the center thereof.
In the transfer chamber 130, a transfer robot 140 is provided for transferring the substrate 10 between the plurality of film forming chambers 110 and transferring the mask between the film forming chambers 110 and the mask stock chamber 120. The transfer robot 140 is, for example, a robot having a configuration in which a robot hand for holding the substrate 10 or the mask is attached to an articulated arm.
In the film formation group 1 as a film formation system, there are connected in the conveyance direction of the substrate 10: a passage chamber 150 for transporting the substrate 10 sent from the upstream side to the film formation group 1, and a buffer chamber 160 for transporting the substrate 10 having completed the film formation process in the film formation group 1 to another film formation group on the downstream side. The transfer robot 140 of the transfer chamber 130 receives the substrate 10 from the passage chamber 150 on the upstream side and transfers the substrate to one of the film forming chambers 110 in the film forming group 1. The transfer robot 140 receives the substrate 10 having completed the film formation process in the film formation group 1 from one of the plurality of film formation chambers 110, and transfers the substrate to the buffer chamber 160 connected to the downstream side. A swirl chamber 170 for changing the direction of the substrate 10 is provided between the buffer chamber 160 and the passage chamber 150 on the further downstream side. This makes it possible to make the directions of the substrates the same in the upstream film formation group and the downstream film formation group, thereby facilitating the substrate processing.
In the mask stock chamber 120, a mask to be used in a film forming process in the film forming chamber 110 and a used mask are separately stored in two cassettes. The transfer robot 140 transfers a used mask from the film forming chamber 110 to the cassette of the mask stock chamber 120, and transfers a new mask stored in another cassette of the mask stock chamber 120 to the film forming chamber 110.
The respective chambers such as the film forming chamber 110, the mask stock chamber 120, the transfer chamber 130, the buffer chamber 160, and the spin chamber 170 are maintained in a high vacuum state during the manufacturing process of the organic EL display panel. Each of the film forming chambers 110 is provided with a film forming device (vapor deposition device in the present embodiment). A series of film formation processes such as transfer of the substrate 10 to and from the transfer robot 140, adjustment (alignment) of the relative positions of the substrate 10 and the mask, fixing of the substrate 10 to the mask, and film formation (vapor deposition) are automatically performed by the film formation apparatus. Although the film forming apparatuses in the respective film forming chambers have portions differing in size such as differences in evaporation sources and differences in masks, the basic configuration (particularly, the configuration related to the conveyance and alignment of the substrate) is generally used. The general structure of the film forming apparatus in each film forming chamber will be described below. In the following description, an upward deposition structure in which film formation is performed in a state in which the film formation surface of the substrate faces downward in the direction of gravity during film formation will be described. However, the present invention is not limited to this, and a downward deposition structure may be adopted in which film formation is performed in a state in which the film formation surface of the substrate faces upward in the direction of gravity during film formation, or a structure (side deposition) in which film formation is performed in a state in which the substrate stands vertically, that is, in a state in which the film formation surface of the substrate is substantially parallel to the direction of gravity.
< film Forming apparatus >
Fig. 2 is a sectional view schematically showing the structure of the film formation apparatus. In the following description, an XYZ rectangular coordinate system in which the vertical direction is the Z direction is used. When the substrate is fixed so as to be parallel to a horizontal plane (XY plane) during film formation, the width direction (direction parallel to the short side) of the substrate is defined as the X direction, and the length direction (direction parallel to the long side) is defined as the Y direction. In addition, the rotation angle around the Z axis is represented by θ. The Z direction corresponds to a "first direction", the X direction corresponds to a "second direction intersecting the first direction", and the Y direction corresponds to a "third direction intersecting the first direction and the second direction".
The film forming apparatus has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. The vacuum chamber 200 is provided therein with a substrate supporting unit 210, a mask 220, a mask stage 221, a cooling plate 230, and an evaporation source 240.
The substrate support unit 210 is a member that supports and conveys the substrate 10 received from the conveyance robot 140, and is also referred to as a substrate holder. The mask 220 is a metal mask having an opening pattern corresponding to a thin film pattern to be formed on the substrate 10, and is fixed to a frame-shaped mask stage 221 as a mask support unit for supporting the mask 220.
During film formation, the substrate 10 is placed on the mask 220. Therefore, the mask 220 also functions as a carrier on which the substrate 10 is mounted. The cooling plate 230 is a plate-like member that is brought into close contact with (a surface of) the substrate 10 (the surface opposite to the surface in contact with the mask 220) during film formation, and suppresses temperature increase of the substrate 10 during film formation, thereby suppressing deterioration or degradation of the organic material. The cooling plate 230 may also serve as a magnet plate. The magnet plate is a member that attracts the mask 220 by magnetic force to improve adhesion between the substrate 10 and the mask 220 during film formation. That is, the adhesion member (magnet plate) that adheres the substrate 10 and the mask 220 to each other may also serve as a temperature adjustment member that adjusts (typically, cools) the temperature of at least one of the substrate 10 and the mask 220.
The evaporation source 240 is configured by a container (crucible) that accommodates a vapor deposition material, a heater that heats the container, a shutter that stops discharge of the vapor deposition material, a drive mechanism that drives various members such as the shutter, an evaporation rate monitor that identifies the thickness of a film to be deposited, and the like (none of which are shown). In the present embodiment, a vapor deposition apparatus using the evaporation source 240 as a film formation source is described, but the present invention is not limited to this, and can be applied to a sputtering apparatus using a sputtering target as a film formation source.
A substrate Z actuator 250 (moving mechanism), a gripper Z actuator 251, a cooling plate Z actuator 252, an X actuator (not shown), a Y actuator (not shown), and a θ actuator (not shown) are provided at an upper portion (outside) of the vacuum chamber 200. These actuators are constituted by, for example, a motor and a ball screw, a motor and a linear guide, and the like. The substrate Z actuator 250 is a driving member for raising and lowering (moving in the Z direction (first direction)) the entire substrate support unit 210. The gripper Z actuator 251 is a driving member for opening and closing a gripping mechanism (described later) of the substrate support unit 210.
Cooling plate Z actuator 252 is a driving means for raising and lowering cooling plate 230. The X actuator, the Y actuator, and the θ actuator (hereinafter, collectively referred to as "XY θ actuator") are driving mechanisms (position adjusting mechanisms) for aligning the substrate 10. The XY θ actuator has a function of moving the entire substrate support unit 210 and/or the cooling plate 230 in the X direction (second direction), moving the entire substrate support unit in the Y direction (third direction), and rotating the entire substrate support unit around the θ direction. In the present embodiment, the θ actuator for performing the θ rotation is provided separately from the X actuator and the Y actuator, but the θ rotation may be performed by a combination of the X actuator and the Y actuator. In the present embodiment, the X, Y and θ of the substrate 10 are adjusted with the mask 220 fixed, but the alignment of the substrate 10 and the mask 220 may be performed by adjusting the position of the mask 220 or adjusting the positions of both the substrate 10 and the mask 220. In this way, the position adjustment mechanism (XY θ actuator) has a function of moving at least one of the substrate 10 and the mask 220 in at least one of the X direction and the Y direction to adjust the relative position between the substrate 10 and the mask 220.
Cameras 260 and 261 for measuring the positions of the substrate 10 and the mask 220 are provided at the upper portion (outside) of the vacuum chamber 200 to align the substrate 10 and the mask 220. The cameras 260 and 261 image the substrate 10 and the mask 220 through a window provided in the vacuum chamber 200. By identifying the alignment mark on the substrate 10 and the alignment mark on the mask 220 from the image, the respective XY positions and relative shifts in the XY plane can be measured.
In order to achieve highly accurate alignment in a short time, it is preferable to perform alignment in two stages, a first alignment in which alignment is roughly performed (also referred to as "rough alignment") and a second alignment in which alignment is performed with high accuracy (also referred to as "fine alignment"). In this case, two kinds of cameras, i.e., a low-resolution but wide-field-of-view first alignment camera 260 and a narrow-field but high-resolution second alignment camera 261, may be used. In the present embodiment, the alignment marks attached to two portions of a pair of opposing sides are measured by two first alignment cameras 260 and the alignment marks attached to four corners (or two diagonal positions) of the substrate 10 and the mask 220 are measured by four second alignment cameras 261, respectively, with respect to the substrate 10 and the mask 220. The number of alignment marks and the number of cameras for measuring the alignment marks are not particularly limited, and for example, in the case of fine alignment, marks attached to both corners of the substrate 10 and the mask 220 may be measured by two cameras 261.
The film forming apparatus includes a control unit 270. The controller 270 has functions of conveying and aligning the substrate 10, controlling the evaporation source, controlling film formation, and the like, in addition to the control of the substrate Z actuator 250, the gripper Z actuator 251, the cooling plate Z actuator 252, the XY θ actuator, and the cameras 260 and 261. The control unit 270 may be configured by a computer having a processor, a memory, a storage, an I/O, and the like, for example. In this case, the function of the control unit 270 is realized by executing a program (computer program) stored in a memory or a storage unit by a processor. The memory or storage corresponds to a "computer-readable recording medium on which a program for causing a computer to execute an alignment method for aligning a substrate and a mask is recorded". As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, a part or all of the functions of the control unit 270 may be constituted by circuits such as ASICs or FPGAs. The controller 270 may be provided for each of the film forming apparatuses, or a plurality of film forming apparatuses may be controlled by one controller 270.
The film deposition apparatus of the present embodiment includes a mask thickness information acquiring means 280 for acquiring thickness information on the mask 220 loaded into the film deposition apparatus. The controller 270 variably controls the amount of movement (movement position) when the aligned substrate 10 is moved toward the mask 220 (or the mask 220 is moved toward the substrate 10) to place the substrate on the mask 220, based on the mask thickness information acquired by the mask thickness information acquiring means 280. The details of the embodiment of the mask thickness information acquiring means 280 and the control of the substrate movement position after the alignment based on the mask thickness information is completed will be discussed later.
< substrate supporting means >
The structure of the substrate support unit 210 will be described with reference to fig. 3. Fig. 3 is a perspective view of the substrate supporting unit 210. The substrate support unit 210 is a member that holds and conveys the substrate 10 by clamping the peripheral edge of the substrate 10 with a clamping mechanism. Specifically, the substrate support unit 210 includes: a support frame 301 provided with a plurality of supports 300 for supporting each of the 4 sides of the substrate 10 from below; and a holding member 303 provided with a plurality of pressing pieces 302 for sandwiching the substrate 10 between the holding member and each of the supporting members 300. The support member 300 and the pressing member 302 form a clamping mechanism in a pair. In the example of fig. 3, three supports 300 are arranged along the short side of the substrate 10, and six clamping mechanisms (the supports 300 and the pressing members 302 form a pair) are arranged along the long side, so that both long sides are clamped. However, the configuration of the chucking mechanism is not limited to the example shown in fig. 3, and the number and arrangement of the chucking mechanisms are appropriately changed in accordance with the size, shape, film deposition conditions, and the like of the substrate to be processed. It should be noted that the support 300 is also referred to as a "finger plate", and the pressing member 302 is also referred to as a "holding member".
The transfer of the substrate 10 from the transfer robot 140 to the substrate support unit 210 is performed, for example, as follows. First, the clamp member 303 is raised by the clamp Z actuator 251 to separate the pusher 302 from the supporter 300, thereby bringing the clamp mechanism into a released state. After the substrate 10 is introduced between the support 300 and the pusher 302 by the transfer robot 140, the gripper Z actuator 251 lowers the gripper 303 to press the pusher 302 against the support 300 with a predetermined pressing force. Thereby, the substrate 10 is sandwiched between the pressing piece 302 and the supporting piece 300. In this state, the substrate support unit 210 is driven by the substrate Z actuator 250, and the substrate 10 can be moved up and down (moved in the Z direction). That is, the substrate Z actuator 250 as a moving mechanism moves the substrate 10 in a first direction (Z direction) perpendicular to the surface of the mask 220 or the film formation surface of the substrate 10, and the substrate 10 and the mask 220 can be moved closer to or away from each other. Since the clamper Z actuator 251 is raised or lowered together with the substrate support unit 210, the state of the clamping mechanism does not change even if the substrate support unit 210 is raised or lowered.
Reference numeral 101 in fig. 3 denotes a second alignment mark attached to four corners of the substrate 10, and reference numeral 102 denotes a first alignment mark attached to the center of a short side of the substrate 10.
< alignment >
Fig. 4 is a diagram illustrating a first alignment step. Fig. 4(a) shows a state immediately after the transfer of the substrate 10 from the transfer robot 140 to the substrate support unit 210. The substrate 10 is deflected downward at its center by its own weight. Next, as shown in fig. 4(b), the holding member 303 is lowered, and the left and right side portions of the substrate 10 are held by the holding mechanism including the pressing member 302 and the supporting member 300.
Next, as shown in fig. 4 c, the first alignment is performed in a state where the substrate 10 is separated from the mask 220 by a predetermined height (a state where the substrate 10 and the mask 220 are separated by a predetermined distance). The first alignment is a first position adjustment process of roughly adjusting the relative position of the substrate 10 and the mask 220 within the XY plane (in a direction parallel to the surface of the mask 220 or the film formation surface of the substrate 10), and is also referred to as "rough alignment". In the first alignment, the substrate alignment mark 102 provided on the substrate 10 and a mask alignment mark (not shown) provided on the mask 220 are recognized by the camera 260, and the positions of the positions in the XY plane and the XY position are measured to perform alignment. That is, the first alignment is performed as follows: the first alignment is performed by adjusting a positional shift between the substrate 10 and the mask 220 at a first position where the substrate 10 is separated from the mounting surface of the mask 220 by a first distance by imaging first alignment marks formed on the substrate 10 and the mask 220, respectively, based on the image. The camera 260 used for the first alignment is a low resolution but wide field of view camera to enable coarse alignment. At the time of alignment, the position of the substrate 10 (substrate support unit 210), the position of the mask 220, or both the substrate 10 and the mask 220 may be adjusted.
When the first alignment process is completed, the substrate 10 is lowered as shown in fig. 5 (a). Next, as shown in fig. 5(b), before the substrate 10 comes into contact with the mask 220, the presser 302 is raised to release the chucking mechanism. Next, as shown in fig. 5(c), in the released state (non-clamped state), after the substrate support unit 210 is lowered to the position where the second alignment is performed, as shown in fig. 5(d), the peripheral portion of the substrate 10 is clamped again by the clamping mechanism. The position where the second alignment is performed is a position where the substrate 10 is temporarily placed on the mask 220 in order to measure the positional deviation between the substrate 10 and the mask 220, and is, for example, a position where the support surface (upper surface) of the support 300 is slightly higher than the placement surface of the mask 220. At this time, at least the central portion of the substrate 10 is in contact with the mask 220, and the left and right side portions of the peripheral portion of the substrate 10 supported by the chucking mechanism are in a state of being slightly separated (floating) from the mounting surface of the mask 220. In the present embodiment, the description has been given of the case where the substrate 10 is lowered in the released state after the first alignment is completed to the measurement position for the second alignment, but the present invention is not limited to this, and the substrate may be lowered in the state where the substrate is held by the substrate holding mechanism.
Fig. 6(a) to 6(d) are views for explaining the second alignment. The second alignment is an alignment process for performing high-precision alignment, and is also referred to as "fine alignment". First, as shown in fig. 6 a, the substrate alignment mark 101 provided on the substrate 10 and the mask alignment mark (not shown) provided on the mask 220 are recognized by the camera 261, and the XY position and the positional deviation in the XY plane are measured. The camera 261 is a narrow-field high-resolution camera so that high-precision alignment can be performed. When the measured positional deviation exceeds a threshold value, the alignment process is performed. Hereinafter, a case where the detected positional deviation exceeds a threshold value will be described.
When the measured positional deviation exceeds the threshold value, as shown in fig. 6(b), the substrate Z actuator 250 is driven to lift the substrate 10 and separate it from the mask 220. In fig. 6(c), the XY θ actuator is driven based on the positional deviation detected by the camera 261 to perform the alignment. At the time of alignment, the position of the substrate 10 (substrate support unit 210), the position of the mask 220, or both the substrate 10 and the mask 220 may be adjusted.
Thereafter, as shown in fig. 6(d), the substrate 10 is again lowered to the position where the second alignment is performed, and the substrate 10 is placed on the mask 220. Next, the alignment marks of the substrate 10 and the mask 220 are photographed by the camera 261, and the positional deviation is measured. When the detected positional deviation exceeds the threshold value, the above-described alignment process is repeated. When the positional deviation is within the threshold value, as shown in fig. 7(a) to 7(b), the substrate support unit 210 is lowered with the substrate 10 sandwiched therebetween, and the support surface of the substrate support unit 210 is aligned with the height of the mask 220. Thereby, the entire substrate 10 is placed on the mask 220. Thus, the second alignment is performed as follows: the second alignment is performed by imaging the second alignment marks formed on the substrate 10 and the mask 220 at a second position where the substrate 10 and the mask 220 are closer to each other than the first distance, adjusting the positional deviation between the substrate 10 and the mask 220 based on the imaged image of the second alignment marks at a position where the substrate 10 and the mask 220 are separated again, and then bringing the substrate 10 and the mask 220 closer to the second position again.
Through the above steps, when the process of placing the substrate 10 on the mask 220 is completed, the cooling plate Z actuator 252 is driven to lower the cooling plate 230 and bring it into close contact with the substrate 10 as shown in fig. 7 (c). Thus, the preparation of the film formation process (vapor deposition process) by the film formation apparatus is completed.
In the present embodiment, as shown in fig. 6(a) to 6(d), an example in which the second alignment is repeated in a state in which the substrate 10 is held by the chucking mechanism has been described, but the chucking mechanism may be set to a released state or a chucking force of the chucking mechanism may be weakened (chucking may be released) when the substrate 10 is placed on the mask 220.
In the present embodiment, the film formation process (vapor deposition process) is performed in a state of fig. 7 c, that is, in a state where the cooling plate 230 is lowered (or, in a case where a magnet plate is separately provided from the cooling plate 230, the magnet is also lowered next to the cooling plate 230) and the substrate 10 placed on the mask 220 is brought into close contact with the mask 220. However, the present invention is not limited to this, and the film forming process (vapor deposition process) may be performed after the substrate 10 and the mask 220 are brought into close contact, the pressing tool 302 is raised to release the clamping mechanism, and the substrate Z actuator 250 is driven to further lower the support 300.
< mask thickness information acquiring Member >
The substrate movement position control after the alignment based on the mask thickness information will be described in detail below.
As described above, in the present embodiment, first, in a state where the substrate 10 and the mask 220 are separated from each other, rough alignment (first alignment) for roughly adjusting the relative positions of the substrate 10 and the mask 220 in the XY plane is performed based on the imaging result of the camera 260 (see fig. 4 c). Next, when the position adjustment by the rough alignment is completed, the substrate 10 is lowered to a position close to the mask 220 while maintaining the aligned state. Specifically, in the above embodiment, the substrate 10 is lowered to a position where the center portion of the substrate 10 is in contact with the mask 220 and the left and right side portions of the substrate 10 are slightly separated from the mounting surface of the mask 220 (see fig. 5 (d)). However, the present invention is not limited to such control. That is, "approaching" when the substrate and the mask after alignment are moved to be close to each other after the alignment is completed includes not only a case where a part of the substrate is moved to a position where the substrate comes into contact with the mask but also a case where the substrate is moved to be close to a limit immediately before the substrate comes into physical contact.
In the present embodiment, the target movement position (movement amount) when the substrate whose positional displacement is adjusted and the mask are moved close to each other is controlled based on the thickness information of the mask used in the alignment step as described above. That is, when the substrate 10 and the mask 220, the positional deviation of which is adjusted by the first alignment, are moved from the first position to the second position so as to approach each other, the controller 270 controls the moving mechanism based on the thickness information of the mask 220 acquired by the mask thickness information acquiring means 280. More specifically, the thickness information of the mask 220 loaded into the film deposition apparatus is acquired, and the amount of movement of the substrate 10 that moves closer to the mask 220 by driving the substrate Z actuator 250 is controlled based on the acquired thickness information. In other words, the amount of movement when the aligned substrate 10 is moved toward the mask 220 is corrected according to the difference in thickness between the masks. This makes it possible to prevent the adjusted positional relationship between the substrate and the mask from being shifted again due to individual differences of the masks in the process of placing the substrate on the mask after the alignment is completed.
In order to perform the above control, the film deposition apparatus according to the present embodiment includes a mask thickness information acquiring means 280 for acquiring the thickness information of the mask 220 loaded into the film deposition apparatus. As a specific embodiment of the mask thickness information acquiring means 280, that is, a detailed method for acquiring the thickness information of the mask 220, several methods (modes) can be considered as follows.
As a first aspect, a user using the film formation apparatus can directly input the thickness information of the mask 220 that is fed into the film formation apparatus via the operation terminal. That is, the thickness information of the mask is input to each mask 220 loaded into the film forming apparatus by the user, and the thickness information of the mask is directly input by the user through an input means such as a keyboard, a mouse, or a touch panel by manual operation, so that the film forming apparatus can acquire the mask thickness information. The control unit 270 of the film deposition apparatus controls the driving of the substrate Z actuator 250 so as to adjust the target movement position (movement amount) when the aligned substrate and the mask are moved close to each other, based on the thickness information of each mask 220 acquired by the input from the user.
As a second aspect, the thickness information of the mask may be stored in the storage unit as a table together with an identifier that can identify each mask, and the thickness information may be acquired by reading the identifier and referring to the table. Masks put into a production line of organic EL display elements are assigned with Identifiers (IDs) for the purpose of process control management on the production line. The identifier is given to each mask as a form such as a barcode. The mask thickness information acquiring means 280 according to the present embodiment includes: the mask information processing apparatus includes a reading unit capable of reading the identifier given to each mask as described above, and a storage unit storing the mask identifier and the thickness information of the mask in association with each other as an association table. Fig. 8 shows an example of the association table stored in the storage unit. That is, the association table includes at least an identifier of each mask and thickness information of the mask of the identifier. The mask thickness information acquiring means 280 according to the present embodiment can acquire the thickness information corresponding to the identifier by reading the mask identifier given to the mask 220 in the form of a barcode or the like by the reading unit when the mask 220 is loaded into the film deposition apparatus, and referring to the association table stored in the storage unit based on the read identifier.
As a third aspect, the mask thickness information may be acquired by communication from an upstream side transport device of a mask transport system that transports the mask into the film deposition apparatus or a control device that controls the upstream side transport device. As described above, the film formation group 1 in the production line of the organic EL display device includes the mask stock chamber 120 that temporarily stores the mask conveyed from the upstream side conveying device of the mask conveying system before the mask is sent into the film formation chamber 110. The mask stocker 120 stores a plurality of masks in a cassette having a plurality of layers, and sequentially pulls out the masks used in the film forming process from the cassette as necessary, and feeds the masks into the film forming apparatus constituting the film forming chamber 110. The mask thickness information in the present embodiment is acquired as follows: when the masks are transported from the upstream side transport device of the mask transport system and stored in the mask stock chamber 120, the thickness information of each mask being transported by the film formation device is also received by communication from the upstream side transport device or a control device that controls the upstream side transport device.
The second embodiment described above is a method of: while the film deposition apparatus recognizes each mask by reading the identifier and acquires the thickness information of the corresponding mask by referring to the table based on the recognition result, the third embodiment is a system in which the thickness information itself of the mask is directly received from the upstream apparatus that conveys the mask without performing another mask recognition operation in the film deposition apparatus. That is, when the masks are transferred from the upstream apparatus of the mask transfer system to the mask stocker 120, for example, the film deposition apparatus receives the thickness information of the masks being transferred so that the mask stored in the first layer has a first thickness and the mask stored in the second layer has a second thickness for each layer of the cassette, and thus the film deposition apparatus can check the thickness information of the masks when the masks are sequentially transferred from the cassette of the mask stocker 120.
As a fourth aspect for acquiring the mask thickness information, a measuring member for measuring the thickness of the mask by measurement may be provided in the film formation group. That is, the thickness measuring means may be used to acquire the thickness information of the mask fed into the film forming apparatus by actual measurement. The thickness measuring means may be provided at an arbitrary position where the mask is located within the film formation group 1. As described above, the mask transferred from the upstream apparatus of the mask transfer system is temporarily stored in the mask stock chamber 120, and then is transferred by the transfer robot into the film forming apparatus constituting the film forming chamber 110 via the transfer chamber 130. The measuring member for measuring the thickness of the mask may be provided at any position on the mask transfer path, that is, at any position such as in the mask stocker 120, in the transfer chamber 130, or in the film forming chamber 110 constituting the film forming apparatus. As a specific structure of the member for measuring the thickness by actual measurement, any known structure of the thickness measuring member may be adopted, and the structure is not limited to the structure of a specific thickness actual measurement member.
The controller 270 of the film deposition apparatus according to the present embodiment controls the driving of the substrate Z actuator 250 so as to adjust the target movement position (movement amount) when the aligned substrate is moved toward the mask in close proximity, in accordance with the thickness information of each mask acquired as described above. This makes it possible to prevent the adjusted positional relationship between the substrate and the mask from being shifted again due to individual differences of the masks in the process of placing the substrate on the mask after the alignment is completed. In particular, according to the configurations of the second to fourth embodiments among the above-described configurations, as an embodiment for acquiring the thickness information of the mask, it is possible to avoid the possibility of an input error when the user directly inputs the mask thickness information by a manual operation, and it is possible to more reliably suppress a decrease in alignment accuracy due to an individual difference of the mask.
In the above description, the operation of relatively moving the substrate and the mask close to each other after the alignment step has been described centering on the first alignment, that is, the rough alignment for roughly adjusting the relative positions of the substrate and the mask, but the present invention is not limited to this. For example, the present invention can also be applied to fine alignment (second alignment) performed after the first alignment. As described above, after the alignment operation by the rough alignment (first alignment), in a state where the substrate 10 is brought close to the mask 220 (see fig. 5 d and 6 a), each alignment mark on the substrate 10 and the mask 220 is imaged by the high-resolution camera 261 provided at the corner, and when the detected positional deviation exceeds the threshold value, the substrate 10 is raised again to be separated from the mask 220 (fig. 6 b), and in this separated state, the XY θ actuator is driven to perform the alignment (fig. 6 c), and then the substrate 10 is lowered again to the measurement position where a part of the center portion of the substrate is placed on the mask 220, and the substrate is brought close to the mask 220 (fig. 6 d). Then, the separation and approach operations between the substrate and the mask are repeated until the positional deviation between the substrate and the mask is within the predetermined threshold by the above alignment operation. The present invention can also be applied to a case where the substrate 10 and the mask 220 are moved relatively close to each other after the alignment process (fig. 6 c) by the second alignment (fine alignment) (fig. 6 d). That is, when the substrate 10 and the mask 220 are moved relatively close to each other, the thickness information of each mask is used, so that the reduction of the alignment accuracy due to the individual difference of the masks can be suppressed. In this way, the controller 270 may control the moving mechanism based on the thickness information of the mask 220 acquired by the thickness information acquiring means 280 when the substrate 10 and the mask 220 are moved closer to each other to the second position (the position where the center portion of the substrate 10 is in contact with the mounting surface of the mask 220 and the side portion of the substrate 10 is separated from the mounting surface of the mask 220) after the positional shift adjustment based on the second alignment is performed between the substrate 10 and the mask 220 at the separated position based on the captured image of the second alignment mark.
The present invention can be similarly applied to the case where the substrate 10 is completely placed on the mask 220 after the second alignment. That is, as described with reference to fig. 7, when the positional deviation is within the threshold value by the second alignment (fine alignment), the substrate support unit 210 is further lowered so that the entire substrate 10 is finally completely placed on the mask 220, and in this case, the driving of the substrate Z actuator 250 may be controlled based on the mask thickness information so as to adjust the amount of lowering movement of the substrate support unit 210 according to the present invention. In this way, the controller 270 may control the moving mechanism based on the thickness information of the mask 220 acquired by the thickness information acquiring means 280 when the substrate 10 and the mask 220, the positional deviation of which has been adjusted by the second alignment, are moved from the second position further toward each other until the substrate 10 is completely mounted on the mask 220.
The present invention can be applied to a case where the cooling plate 230 is lowered toward the mounting unit (a combination of the mask 220 and the substrate 10 mounted on the mask 200 is referred to as a "mounting unit") after the substrate 10 is mounted on the mask 220 as described above (or a case where a magnet plate is separately provided from the cooling plate 230, and then the cooling plate 230 is lowered) as shown in fig. 7 (c). That is, although individual differences may occur in the placement unit on which the substrate is placed on the mask when there is a difference in thickness between the masks, according to the present invention, the driving of the cooling plate Z actuator 252 may be controlled so that the amount of movement when the cooling plate is moved down toward the placement unit is also adjusted based on the thickness information of the mask. That is, the film deposition apparatus may include a second moving mechanism (cooling plate Z actuator 252 or magnet plate Z actuator (not shown)) for moving up or down a magnet plate (not shown) as a magnetic force applying member for applying a magnetic force to the mask 220 through the substrate 10 or a cooling plate 230 as a cooling member for cooling the substrate 10. The controller 270 may control the second moving mechanism based on the mask thickness information acquired by the mask thickness information acquiring means 280.
< method for producing electronic device >
Next, an example of a method for manufacturing an electronic device using the film formation apparatus of the present embodiment will be described. Hereinafter, the structure and the manufacturing method of the organic EL display device are exemplified as an example of the electronic device.
First, the organic EL display device manufactured will be described. Fig. 9(a) is an overall view of the organic EL display device 60, and fig. 9(b) shows a cross-sectional structure of one pixel. As shown in fig. 9(a), a plurality of pixels 62 each including a plurality of light-emitting elements are arranged in a matrix in a display region 61 of an organic EL display device 60. Each light emitting element has a structure including an organic layer sandwiched between a pair of electrodes, and details thereof will be described later. Here, the pixel is the smallest unit that can display a desired color in the display region 61. In the case of the organic EL display device of the present embodiment, the pixel 62 is configured by a combination of the first light-emitting element 62R, the second light-emitting element 62G, and the third light-emitting element 62B showing different light emissions from each other. The pixel 62 is often configured by a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but is not particularly limited as long as it is a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element and at least one color is used.
Fig. 9(B) is a partial cross-sectional view at the line a-B of fig. 9 (a). The pixel 62 includes an organic EL element including a first electrode (anode) 64, a hole transport layer 65, one of light-emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode (cathode) 68 on a substrate 63. The hole transport layer 65, the light emitting layers 66R, 66G, and 66B, and the electron transport layer 67 correspond to organic layers. In this embodiment, the light-emitting layer 66R is an organic EL layer that emits red light, the light-emitting layer 66G is an organic EL layer that emits green light, and the light-emitting layer 66B is an organic EL layer that emits blue light. The light-emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light-emitting elements (also referred to as organic EL elements) that emit red light, green light, and blue light, respectively. The first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, and 62B, or may be formed for each light emitting element. In order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter, an insulating layer 69 is provided between the first electrodes 64. Since the organic EL layer is degraded by moisture and oxygen, a protective layer 70 for protecting the organic EL element from moisture and oxygen is provided.
In fig. 9(b), the hole transport layer 65 and the electron transport layer 67 are illustrated as one layer, but may be formed of a plurality of layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. Further, a hole injection layer having a band structure in which holes can be smoothly injected from the first electrode 64 into the hole transport layer 65 may be formed between the first electrode 64 and the hole transport layer 65. Similarly, an electron injection layer may be formed between the second electrode 68 and the electron transport layer 67.
Next, an example of a method for manufacturing an organic EL display device will be specifically described. First, a substrate 63 on which a circuit (not shown) for driving the organic EL display device and the first electrode 64 are formed is prepared. An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the insulating layer 69 is formed by patterning the acrylic resin by photolithography so as to form an opening in a portion where the first electrode 64 is formed. The opening corresponds to a light-emitting region where the light-emitting element actually emits light.
The substrate 63 on which the insulating layer 69 is patterned is sent to a first film formation device, and is held by a substrate holding unit, and the hole transport layer 65 is formed as a common layer on the first electrode 64 in the display region. The hole transport layer 65 is formed by vacuum evaporation. In practice, the hole transport layer 65 is formed to have a size larger than that of the display region 61, and therefore a high-definition mask is not required.
Next, the substrate 63 formed on the hole transport layer 65 is carried into the second film formation apparatus and held by the substrate support unit. Alignment between the substrate and the mask (first alignment and second alignment) is performed, the substrate is placed on the mask, and the light-emitting layer 66R that emits red light is formed on the portion of the substrate 63 where the element that emits red light is disposed. Similarly to the formation of the light-emitting layer 66R, the light-emitting layer 66G emitting green light is formed by a third film formation device, and the light-emitting layer 66B emitting blue light is formed by a fourth film formation device. After the completion of the formation of the light-emitting layers 66R, 66G, and 66B, the electron transport layer 67 is formed over the entire display region 61 by the fifth film formation device. The electron transport layer 67 is formed as a common layer in the light emitting layers 66R, 66G, and 66B of the three colors. The substrate on which the electron transport layer 67 was formed was moved to a sputtering apparatus to form a second electrode 68, and then moved to a plasma CVD apparatus to form a protective layer 70, thereby completing the organic EL display device 60.
When the substrate 63 patterned with the insulating layer 69 is exposed to an environment containing moisture and oxygen until the formation of the protective layer 70 is completed after being carried into the film forming apparatus, the light-emitting layer made of an organic EL material may be deteriorated by moisture and oxygen. Therefore, in this example, the substrate is carried in and out between the film deposition apparatuses in a vacuum atmosphere or an inert gas atmosphere.
The above-described embodiments are examples of the present invention, and the present invention is not limited to the configurations of the above-described embodiments, and may be modified as appropriate within the scope of the technical idea thereof. In the above embodiments, the film deposition apparatus and the film deposition method have been described in detail, but the present invention can be applied to, for example, an alignment apparatus and an alignment method for aligning a mask and a substrate. The present invention may be configured such that a program (software) for realizing one or more functions of the above-described embodiments is supplied to a system or an apparatus via a network or various storage media, and the program and the storage media readable by a computer storing the program are included in a process in which one or more processors in a computer of the system or the apparatus read the program and execute the program.

Claims (28)

1. An alignment apparatus for performing alignment between a mask and a substrate, comprising:
a moving mechanism that moves at least one of the substrate and the mask in a first direction to bring the substrate close to or away from the mask;
a position adjustment mechanism that moves at least one of the substrate and the mask in at least one of a second direction intersecting the first direction and a third direction intersecting the first direction and the second direction, and adjusts a relative position between the substrate and the mask;
a control unit that controls the moving mechanism and the position adjustment mechanism; and
a thickness information acquiring means that acquires thickness information of the mask,
the control unit controls the moving mechanism based on the thickness information of the mask acquired by the thickness information acquiring unit.
2. The alignment device of claim 1,
the control unit controls the position adjustment mechanism so that the substrate and the mask are aligned at a position where the mask and the substrate are separated from each other,
when the substrate and the mask that have been aligned are moved close to each other, the control unit controls the movement mechanism so as to adjust the target movement position based on the thickness information of the mask acquired by the thickness information acquisition means.
3. The alignment device of claim 1 or 2,
the thickness information acquiring means is input means for receiving, from a user, input of thickness information of the mask with respect to the mask.
4. The alignment device of claim 1 or 2,
identifiers for identifying the respective masks are formed on the masks,
the thickness information acquiring means reads an identifier assigned to each of the masks to acquire the thickness information of the mask corresponding to the identifier.
5. The alignment device of claim 4,
the thickness information acquisition member includes: the mask information processing apparatus includes a reading unit that reads an identifier given to each of the masks, and a storage unit that stores the identifier of the mask and the thickness information of the mask in association with each other.
6. The alignment device according to any of claims 1 to 5,
the thickness information acquiring means receives the thickness information of the mask from an upstream side conveying device that conveys the mask to the alignment device or a control device that controls the upstream side conveying device.
7. The alignment device of claim 1 or 2,
the thickness information acquiring means is a means for measuring thickness information of the mask.
8. The alignment device of claim 7,
the thickness information acquiring member is provided at an arbitrary position on a conveying path that conveys the mask to the alignment device.
9. The alignment device of claim 8,
the alignment device is provided in a film formation system including a film formation chamber for forming a film on the substrate,
the film forming system includes: a mask storage chamber for temporarily storing the mask to be transferred to the film forming chamber, and a transfer chamber serving as a transfer path for transferring the mask from the mask storage chamber to the film forming chamber,
the thickness information acquiring member is provided in any one of the film forming chamber, the transfer chamber, and the mask reserve chamber.
10. The alignment device according to any of claims 1 to 9,
the control section controls the position adjustment mechanism so as to sequentially perform a first alignment in which a positional deviation of the substrate and the mask is roughly adjusted, and a second alignment in which a positional deviation of the substrate and the mask is adjusted with higher accuracy than the positional deviation adjustment by the first alignment,
the control unit controls the moving mechanism based on the thickness information of the mask acquired by the thickness information acquiring unit when the substrate and the mask, the positional deviation of which is adjusted by the first alignment, are moved to be close to each other.
11. The alignment device of claim 10,
the first alignment is performed as follows: performing the first alignment by adjusting a positional shift between the substrate and the mask at a first position on the basis of an image obtained by imaging first alignment marks formed on the substrate and the mask at the first position at which the substrate is separated from a mounting surface on the mask by a first distance,
the second alignment is performed as follows: performing the second alignment by imaging a second alignment mark formed on the substrate and the mask, respectively, at a second position where the substrate and the mask are closer than the first distance, adjusting a positional deviation between the substrate and the mask based on an imaged image of the second alignment mark at a position where the substrate and the mask are separated again, and then bringing the substrate and the mask closer to the second position again,
the control unit controls the moving mechanism based on the thickness information of the mask acquired by the thickness information acquiring unit when the substrate and the mask, the positional deviation of which is adjusted by the first alignment, are moved from the first position to the second position so as to approach each other.
12. The alignment device of claim 11,
the control unit controls the moving mechanism based on the thickness information of the mask acquired by the thickness information acquiring unit when the substrate and the mask are moved closer to the second position again after performing position shift adjustment based on the second alignment between the substrate and the mask at the separated position based on the captured image of the second alignment mark.
13. The alignment device of claim 11 or 12,
the second position is a position where the center portion of the substrate is in contact with the mounting surface of the mask and the side portion of the substrate is spaced apart from the mounting surface of the mask.
14. The alignment device of claim 13,
the control unit controls the moving mechanism based on the thickness information of the mask acquired by the thickness information acquiring unit when the substrate and the mask, the positional deviation of which is adjusted by the second alignment, are moved from the second position to a position where the substrate is completely mounted on the mask.
15. The alignment device according to any one of claims 1 to 14,
the alignment apparatus includes a second moving mechanism that moves at least one of a magnetic force applying member for applying a magnetic force to the mask with the substrate interposed therebetween and a cooling member for cooling the substrate in the first direction,
the control unit controls the second movement mechanism based on the thickness information of the mask acquired by the thickness information acquiring means.
16. An alignment apparatus for performing alignment between a mask and a substrate, comprising:
a moving mechanism that moves at least one of the substrate and the mask in a first direction to bring the substrate close to or away from the mask;
a position adjustment mechanism that moves at least one of the substrate and the mask in at least one of a second direction intersecting the first direction and a third direction intersecting the first direction and the second direction, and adjusts a relative position between the substrate and the mask;
a second moving mechanism that moves at least one of a magnetic force applying member for applying a magnetic force to the mask via the substrate and a cooling member for cooling the substrate in the first direction;
a control unit that controls the moving mechanism, the position adjustment mechanism, and the second moving mechanism; and
a thickness information acquiring means that acquires thickness information of the mask,
the control unit controls the second movement mechanism based on the thickness information of the mask acquired by the thickness information acquiring means.
17. A film forming apparatus for forming a film on a substrate through a mask,
the film forming apparatus includes an alignment device that aligns the substrate and the mask,
the alignment device is as claimed in any one of claims 1 to 16.
18. An alignment method for performing alignment of a substrate and a mask, comprising:
a position adjustment step of adjusting a relative position between the substrate and the mask by moving at least one of the substrate and the mask in at least one of a second direction and a third direction intersecting the second direction at a position where the mask is separated from the substrate by a position adjustment mechanism;
a moving step of moving at least one of the substrate and the mask, which are aligned, in a first direction intersecting the second direction and the third direction by a moving mechanism so as to be close to each other; and
a step of acquiring thickness information of the mask by using a thickness information acquiring means,
in the moving step, the moving mechanism is controlled so as to adjust the target moving position based on the thickness information of the mask acquired by the thickness information acquiring means.
19. The alignment method of claim 18,
the step of acquiring the thickness information is a step of receiving, from a user, input of the thickness information of the mask with respect to the mask loaded into the film deposition apparatus.
20. The alignment method of claim 18,
identifiers for identifying the respective masks are formed on the masks,
the step of acquiring the thickness information is a step of reading an identifier given to each of the masks to acquire the thickness information of the mask corresponding to the identifier.
21. The alignment method of claim 18,
the step of acquiring the thickness information is a step of receiving the thickness information of the mask from an upstream side transport device that transports the mask into the film formation apparatus or a control device that controls the upstream side transport device.
22. The alignment method of claim 18,
the step of acquiring the thickness information is a step of measuring the thickness information of the mask fed into the film forming apparatus by actual measurement using a thickness measuring means.
23. The alignment method according to any one of claims 18 to 22,
the alignment method includes a second moving step of moving at least one of a magnetic force applying member for applying a magnetic force to the mask via the substrate and a cooling member for cooling the substrate in the first direction toward the substrate in proximity to the mask by a second moving mechanism,
in the second moving step, the second moving mechanism is controlled so as to adjust the target moving position based on the thickness information of the mask acquired by the thickness information acquiring means.
24. An alignment method for performing alignment of a substrate and a mask, comprising:
a position adjustment step of adjusting a relative position between the substrate and the mask by moving at least one of the substrate and the mask in at least one of a second direction and a third direction intersecting the second direction at a position where the mask is separated from the substrate by a position adjustment mechanism;
a moving step of moving at least one of the substrate and the mask, which are aligned, in a first direction intersecting the second direction and the third direction by a moving mechanism so as to be close to each other;
a second moving step of moving at least one of a magnetic force applying member for applying a magnetic force to the mask via the substrate and a cooling member for cooling the substrate in the first direction toward the substrate in proximity to the mask by a second moving mechanism; and
a step of acquiring thickness information of the mask by using a thickness information acquiring means,
in the second moving step, the second moving mechanism is controlled so as to adjust the target moving position based on the thickness information of the mask acquired by the thickness information acquiring means.
25. A film forming method for forming a film on a substrate through a mask,
comprising the alignment method of any one of claims 18 to 24.
26. A method for manufacturing an electronic device, wherein the film-forming method according to claim 25 is used to manufacture an electronic device.
27. A computer-readable recording medium having a program recorded thereon for causing a computer to execute an alignment method for aligning a substrate and a mask,
the alignment method according to any one of claims 18 to 24.
28. A program for causing a computer to execute the alignment method according to any one of claims 18 to 24.
CN202010114406.8A 2019-02-27 2020-02-25 Alignment device and method, film forming device and method, method for manufacturing electronic device, recording medium, and program Pending CN111621741A (en)

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