JP6745833B2 - Vapor deposition apparatus, vapor deposition method, and method for manufacturing organic EL display device - Google Patents

Description

The present invention relates to a vapor deposition device for vapor depositing an organic layer of an organic EL display device, a vapor deposition method, and a method for manufacturing an organic EL display device.

For example, when an organic EL display device is manufactured, a switch element such as a TFT is formed on a support substrate, and an organic layer is laminated on the electrode corresponding to each pixel. This organic layer is sensitive to moisture and cannot be etched. Therefore, the stacking of the organic layers is performed by arranging the supporting substrate (the substrate to be vapor-deposited) and the vapor deposition mask so as to overlap each other, and performing vapor deposition of the organic material through the opening of the vapor deposition mask. Then, the necessary organic material is laminated only on the electrodes of the necessary pixels. If the vapor deposition substrate and the vapor deposition mask are not as close to each other as possible, the organic layer is not formed only in the correct region of the pixel. If the organic material is not deposited only in the correct pixel area, the displayed image tends to be blurred. Therefore, a magnetic chuck is used in which a magnetic material is used for the vapor deposition mask and the vapor deposition substrate is interposed between the permanent magnet or electromagnet and the vapor deposition mask to bring the vapor deposition substrate into close contact with the vapor deposition mask (for example, See Patent Document 1).

JP, 2008-024956, A

Conventionally, a metal mask has been used as a vapor deposition mask, but in recent years, in order to form a finer opening, a hybrid type vapor deposition mask in which the periphery of the opening of a mask formed of a resin film is supported by a metal supporting layer. Tend to be used. A vapor deposition mask having a small amount of magnetic material, such as a hybrid mask, cannot perform sufficient adsorption unless a stronger magnetic field (magnetic field) is used.

As described above, if the adsorption is not sufficient, the adhesion between the vapor deposition substrate and the vapor deposition mask deteriorates. A strong magnetic field is necessary to sufficiently attract the vapor deposition mask to the vapor deposition substrate side. When a permanent magnet is used as the magnet of the magnetic chuck, it becomes difficult to align the vapor deposition substrate and the vapor deposition mask when the magnetic field is strong. On the other hand, when the electromagnet is used, the magnetic field can be applied after the alignment without applying the magnetic field during the alignment, and therefore the alignment between the deposition target substrate and the deposition mask becomes easy. However, if a strong magnetic field is applied after the deposition substrate and the deposition mask are aligned using the electromagnet, it may occur that the TFT of the deposition substrate or the laminated film of the organic material may have poor performance or deterioration of characteristics. The present inventors have found out. In particular, when a hybrid-type vapor deposition mask is used, a strong magnetic field is necessary for sufficient adsorption. In this case, the magnetic field to be strengthened is at most about twice, which is not enough to require a large electromagnet. However, even in the case of the electromagnet in the case of the conventional metal mask, the change in the magnetic flux when the current is applied is very large, and the change in the magnetic flux becomes more remarkable as the current increases. The inventors of the present invention have found that the electromagnetic induction generated when the current is applied can cause the defects of the TFT formed on the substrate to be vapor-deposited and the deterioration of the organic layer to appear significantly.

The present invention has been made to solve such a problem, and even if an electromagnet is used as a magnet of a magnetic chuck, defective or deteriorated elements such as TFTs formed on a substrate to be vapor-deposited, and organic An object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method that suppress deterioration of layer characteristics.

Another object of the present invention is to provide a method for manufacturing an organic EL display device having excellent display quality by using the above vapor deposition method.

The vapor deposition apparatus of the present invention is provided with an electromagnet, a substrate holder for holding a vapor deposition substrate to be provided at a position facing one magnetic pole of the electromagnet, and the electromagnet of the vapor deposition substrate held by the substrate holder. A vapor deposition mask having a magnetic material provided on a surface not provided, a vapor deposition source provided to face the vapor deposition mask and vaporizing or sublimating a vapor deposition material, a power supply circuit for driving the electromagnet, and the power supply circuit. And a control circuit that is connected between the electromagnet and that gently changes a magnetic field generated by the electromagnet when a current is applied to the electromagnet.

A vapor deposition method according to an embodiment of the present invention is a method in which an electromagnet, a vapor deposition substrate, and a vapor deposition mask having a magnetic material are superposed, and the vapor deposition substrate and the vapor deposition are performed by energizing the electromagnet from a power supply circuit. A step of adsorbing a mask, and a step of depositing the vapor deposition material on the vapor deposition target substrate by scattering the vapor deposition material from a vapor deposition source arranged apart from the vapor deposition mask, the electromagnet and the vapor deposition mask At the time of adsorption, the electric current is applied to the electromagnet by gently changing the magnetic field generated by the electromagnet.

A method of manufacturing an organic EL display device according to an exemplary embodiment of the present invention includes forming at least a TFT and a first electrode on a support substrate, and depositing an organic material on the support substrate by using the above-described vapor deposition method. Forming a laminated film of layers and forming a second electrode on the laminated film.

According to the vapor deposition apparatus and vapor deposition method of one embodiment of the present invention, it is possible to suppress defects and deterioration of elements such as TFTs formed on a substrate to be vapor-deposited and further deterioration of characteristics of organic layers.

It is a circuit diagram of the 1st example of the control circuit used for the vapor deposition device of one embodiment of the present invention. It is a figure which shows the change of the magnetic field H after an electric current is input in the circuit of FIG. 1A. It is a circuit diagram of the 2nd example of the control circuit used for the vapor deposition device of one embodiment of the present invention. It is a figure which shows the change of the magnetic field H after an electric current is input in the circuit of FIG. 2A. It is a circuit diagram of the 3rd example of the control circuit used for the vapor deposition device of one embodiment of the present invention. It is a figure which shows the change of the magnetic field H after an electric current is input in the circuit of FIG. 3A. It is a figure which shows an example of the switch circuit of FIG. 3A. This is a modified example of the circuit of FIG. 3A and is an example in which an AC power supply is rectified and used. It is a circuit diagram of the 4th example of the control circuit used for the vapor deposition device of one embodiment of the present invention. It is a figure which shows the change of the magnetic field H after an electric current is input in the circuit of FIG. 4A. It is a figure which shows the relationship of the electromagnet of a vapor deposition apparatus, a to-be-deposited substrate, and a vapor deposition mask. It is an enlarged view of an example of a vapor deposition mask. It is a figure which shows typically the magnetic field generated by an electromagnet. It is a figure which shows the relationship between a magnetic flux and the space|interval of a to-be-deposited substrate and a vapor deposition mask. It is a figure which shows the vapor deposition process by the manufacturing method of the organic EL display device of this invention. It is a figure which shows the state by which the organic layer was laminated|stacked by the manufacturing method of the organic EL display device of this invention.

Next, a vapor deposition apparatus and vapor deposition method according to an embodiment of the present invention will be described with reference to the drawings. FIG. 5A shows an example of the entire configuration of the vapor deposition apparatus of this embodiment, and FIG. 1A shows a circuit example of the first example of the control circuit thereof. As shown in FIG. 5A, the electromagnet 3, a substrate holder 29 for holding the deposition target substrate 2 to be provided at a position facing one magnetic pole of the electromagnet 3, and the deposition target substrate 2 held by the substrate holder 29 It includes a vapor deposition mask 1 provided on the surface on which the electromagnet 3 is not provided and having a magnetic material, and a vapor deposition source 5 provided to face the vapor deposition mask 1 and vaporizing or sublimating the vapor deposition material. Further, as shown in FIGS. 1A to 4A, a power supply circuit 6 for driving the electromagnet 3 is connected between the power supply circuit 6 and the electromagnet 3, and is generated by the electromagnet 3 when an electric current is applied to the electromagnet 3. And a control circuit 7 for gently changing the magnetic field.

Here, "gradual" means increasing the rise time of the current, which is 100 times or more the normal rise time, specifically, the rise time (from when the switch is turned on to when the current reaches a predetermined value). Time) is on the order of milliseconds.

Here, in order to obtain adhesion between the vapor deposition mask 1 and the substrate 2 to be vapor deposited, the present inventors use a permanent magnet instead of the electromagnet in the configuration as shown in FIG. The plate 4, the vapor deposition substrate 2 and the vapor deposition mask 1 were overlaid, and the relationship between the magnetic flux and the gap between the vapor deposition mask 1 and the vapor deposition substrate 2 was examined. The result is shown in FIG. As the permanent magnet, a sheet magnet was used in which a magnetic field was generated on one surface and a magnetic field was not generated on the other surface (magnetic field was 0). Three permanent magnets having different magnetic fields were prepared, the three permanent magnets were exchanged, and the relationship between the magnetic field on the surface of the vapor deposition mask 1 and the gap between the vapor deposition substrate 2 and the vapor deposition mask 1 was examined. A hybrid type mask was used as the vapor deposition mask 1. From the result of confirming the relationship between the gap and the deposition state of the organic material, it is found that the smaller the gap between the deposition target substrate 2 and the deposition mask 1 is, the more preferable it is. There is.

Therefore, it is understood from the investigation result shown in FIG. 6 that the larger the magnetic field H or the magnetic flux density B (B=μH; μ is magnetic permeability) of the magnet, the more preferable. However, as described above, when the vapor deposition mask 1 is attracted by the electromagnet 3 by a strong magnetic field to bring the vapor deposition substrate 2 and the vapor deposition mask 1 into close contact with each other, the TFTs formed on the vapor deposition substrate 2 as described above. It has been found that such elements may be damaged or the performance may be deteriorated. It has also been found that organic materials can deteriorate. As a result of further intensive studies, the inventors of the present invention have investigated the cause, and as a result, when a current is applied to the electromagnetic coil 32 of the electromagnet 3, the TFT formed on the deposition target substrate 2 by electromotive force due to electromagnetic induction (see FIG. It has been found that an overcurrent flows in a circuit such as (not shown). Then, the inventors of the present invention may destroy or deteriorate the TFT or the organic layer 25 (see FIG. 7B) due to the overcurrent or the Joule heat generated in the electrode 22 (see FIG. 7B) or the like due to the overcurrent. I found that

When a current is passed through the electromagnetic coil 32 of the electromagnet 3 by the power supply circuit 6 (see FIG. 1A), the current rapidly flows, and the magnetic flux Φ (Φ=BS=μHS; S is the cross-sectional area of the core) generated by the electromagnet 3. Increase rapidly. When the magnetic flux Φ changes rapidly, an electromotive force corresponding to V∝-dΦ/dt is generated. When a current is applied to the electromagnetic coil 32, the time (rise time) Δt from when the current reaches 0 to a predetermined current depends on the magnitude of the self-inductance of the electromagnet 3, but in the normal electromagnet 3, 10 μs. (Seconds). Since Δt is very small, the minute time dt can be approximated by this Δt. Therefore, for example, when a magnetic flux of about 300 gauss is changed in this time Δt, an electromotive force of about 30 MV is generated by electromagnetic induction. This electromotive force causes a current to flow in a closed circuit in the substrate 2 to be vapor-deposited, and damages the TFT and the like. As can be seen from the above equation, this electromotive force V becomes larger as the change in the magnetic flux Φ is larger and the time change is shorter. Since the electromagnetic coil 32 of the electromagnet 3 has a self-inductance, the change of the magnetic flux Φ is suppressed, but the large induced electromotive force of about 30 MV described above still occurs, and such induced electromotive force causes damage to the element and deterioration of characteristics. Have been shown to affect. Further, as the amount of Joule heat Q(J), heat represented by Q=V ² ·t/R is generated (R: closed circuit electric resistance (Ω) in the deposition target substrate 2). Due to the generation of Joule heat, the characteristics of an organic material that is weak to high temperature may deteriorate.

As a result of further intensive studies by the present inventors, the magnetomotive force (N·I; N is the number of turns of the coil, I is the magnitude of the current flowing through the electromagnetic coil) generated by the electromagnet 3 is gradually increased. It was found that such a problem can be solved by gradually changing the generated magnetic flux. That is, the induced electromotive force can be reduced by gradually increasing not only the self-inductance of the electromagnet 3 but also the number of turns N or the current I of the electromagnetic coil 32 or increasing the rising time Δt. It was found that it could be resolved. Specifically, it has been found that the induced electromotive force can be reduced to about 1/1000 and the problem can be solved by extending the conventional rise time Δt by about 100 times, more preferably about 1000 times. The specific means for grading the change in the magnetic flux is to gradually increase the magnetomotive force itself applied to the electromagnet 3, that is, to gradually increase the number of turns of the electromagnetic coil 32 or the current, or to delay circuit, that is, a chopper or , Gradually increasing the application of current to the electromagnetic coil 32 using a reactance element such as a capacitor. It has been found that the rise of the magnetomotive force (magnetic field) that causes the electromagnetic induction can be moderated to prevent damage and deterioration of elements such as TFTs and organic layers formed on the deposition target substrate 2. ..

To reduce the induced electromotive force, it is necessary to reduce the change in the magnetic flux Φ, as described above. dt can be approximately regarded as the time when the magnetic flux changes from 0 to Φ. Therefore, for example, the time Δt required to reach the predetermined magnetic field shown in FIG. 1B should be increased. As described above, this Δt may be set to be about 1000 times as large as the case without delay, that is, about 10 ms (milliseconds). In the above description, the current is applied to the electromagnetic coil 32 of the electromagnet 3, but when the current is turned off and the magnetic flux Φ is set to 0, the magnetic flux also rapidly changes. Therefore, also in this case, the induced electromotive force in the opposite direction is generated, and there is a similar problem, but the problem can be solved by inserting the same tap control and delay circuit as in the case of supplying the current. .. Specific examples thereof will be described in more detail with reference to FIGS.

(Example 1)
In the example shown in FIGS. 1A and 1B, a plurality of taps 32b, 32c, and 32d are formed in the electromagnetic coil 32 of the electromagnet 3, and the connection is sequentially changed from the tap 32b to the tap 32c by sequentially rotating the switch 71. It has become. If the number of turns of the coil is N and the current is I, the magnetic flux Φ becomes Φ=N·I. For example, when the switch 71 is connected to the tap 32b, a current flows only in about 1/3 of the electromagnetic coil 32 in FIG. 1A. As a result, the number of turns is about 1/3, and the magnetic flux Φ is =N·I/3. Then, the switch 71 is sequentially switched to the taps 32c and 32d to gradually increase the magnetic flux Φ. Therefore, the change in the magnetic flux becomes small, and the state in which the magnetic flux is hardly influenced by electromagnetic induction can be achieved. The number of the taps 32b to 32d is not limited to this example, and can be set to a number that is not affected by electromagnetic induction. Further, by increasing the switching time of the switch 71, the rise time can be further delayed. When changing the length of the electromagnetic coil 32, strictly speaking, when the length of the electromagnetic coil 32 is different, the resistance value of the electromagnetic coil 32 is changed and the current I is also changed, but the resistance of the electromagnetic coil 32 is as small as possible. Since it is formed so that the change can be ignored.

A change in the magnetic field H (or the number of turns N of the electromagnetic coil 32) with time by the control circuit 7 shown in FIG. 1A is shown in FIG. 1B. The change of the vertical axis can be freely adjusted by the number of taps 32a to 32c, and the interval of the horizontal axis can be freely adjusted by the switching speed of the switch 71.

(Example 2)
In the example shown in FIG. 2A, the power supply circuit 6 is composed of an AC power supply 61 and a rectification circuit 64, and the voltage of the AC power supply 61 can be changed by switching the taps 63 a to 63 c of the secondary coil 63 of the transformer 62. In the example shown in FIG. 2A, three taps 63 a, 63 b, 63 c are formed on the secondary coil 63, and each tap 63 a to 63 c can be switched by the switch 71. The output terminal is connected to the rectifier circuit 64. The rectifier circuit 64 is a normal type in which four diodes are bridge-connected, and the output thereof is connected to the electromagnetic coil 32 of the electromagnet 3. In the example shown in FIG. 2A, for example, when the switch 71 is connected to the tap 63a, only about 1/3 of the secondary coil 63 of the transformer 62 is used as an output. Therefore, the DC current obtained by rectifying this output is used only about 1/3 of the output appearing in the secondary coil 63 of the transformer 62, and the magnetomotive force is generated with a small current. That is, when the switch 71 is connected to the tap 63a, the current flowing through the electromagnetic coil 32 is about I/3, so that the magnetic flux Φ (magnetic field H) is similar to the example shown in FIG. 1A. Φ=N·I/3, and a weak magnetic flux (magnetic field) is generated. After that, by switching the taps 63a to 63c, a desired magnetic flux (magnetic field) can be obtained in about 10 ms as described above. Therefore, the magnetic field is small only at the start, and the suction force of the vapor deposition mask 1 finally obtained is not affected at all.

The change of the magnetic flux Φ (magnetic field H, current I) by the control circuit 7 shown in FIG. 2A can also be changed as in FIG. 1B, as shown in FIG. 2B. Also in this case, the change in the vertical axis can be freely adjusted by the number of taps 63a to 63c, and the time interval in the horizontal axis can be freely adjusted by the switching speed of the switch 71.

(Example 3)
The example shown in FIG. 3A utilizes a so-called chopper circuit, in which the rising of the power supply circuit 6 is delayed by intermittently supplying a current. A switch 72 and a smoothing circuit 73 having a smoothing coil 73a and a diode 73b are connected between the power supply circuit 6 (DC power supply) and the electromagnetic coil 32 of the electromagnet 3. The smoothing coil 73a is connected in series between the switch 72 and one terminal of the electromagnetic coil 32 of the electromagnet 3, and the diode 73b is connected in parallel with the electromagnet 3 between the switch 72 and the other terminal of the electromagnetic coil 32 of the electromagnet 3. It is connected to the. By turning the switch 72 on and off when the current rises, the energy stored in the smoothing coil 73a causes a current to flow through the diode 73b during the off time, so the current does not completely become 0 and is slightly current. When the switch 72 is turned on again only by lowering the current, the current rises again. This state is schematically shown in FIG. 3B.

In FIG. 3B, the upward-sloping curved portion is when the switch 72 is turned on, and the downward-sloping linear portion (not shown as a straight line in practice but shown for convenience) is when the switch 72 is turned off. .. If the change of this electric current (magnetic field) is written approximately, it will become like the dashed-two dotted line of FIG. 3B. In other words, even with such a chopper circuit 73, the rising of the magnetic flux can be made gentle. The rising of the magnetic flux is delayed by the chopper by the switch 72, but is influenced by the smoothing coil 73a, and the smoothing circuit 73 in FIG. 3A can be regarded as a delay circuit by inductive reactance.

As the switch 72, for example, a thyristor as shown in FIG. 3C can be used. The thyristor 72 is, for example, a pnpn junction, and the gate terminal 72g is formed in the inner p layer. A semiconductor switch element is connected to the gate terminal 72g, and the thyristor 72 is on/off controlled by high-speed switching of the semiconductor switch element. Instead of a thyristor, a bipolar transistor for high power, a field effect transistor (including MOS type and junction type), GTO, IGBT, etc. can be used to turn on/off at the gate terminal. Further, when the power supply circuit is an alternating current, a diode can be used.

The circuit shown in FIG. 3D is a modification of FIG. 3A, and the control circuit 7 is formed by integrating the switch, the rectifying circuit 74, and the smoothing circuit 75 using the AC power supply 61. The rectifier circuit 74 for converting alternating current into direct current is formed of a bridge circuit including two thyristors 72b also serving as switches and two diodes 75b. The smoothing circuit 75 is formed by the diode 75b and the smoothing coil 75a. With this circuit, even if the input is AC, it is possible to chopper as in the structure of FIG. 3A for DC input. According to the control circuit 7, the alternating current can be rectified while being choppered to supply the direct current to the electromagnet 3, and the increase of the magnetic flux can be moderated as in the circuit of FIG. 3A.

(Example 4)
FIG. 4A shows a configuration in which a capacitor 75 is connected in parallel with the electromagnet 3 between the power supply circuit 6 and the electromagnet 3. With such a configuration, when a current is output from the power supply circuit 6, a large amount of current first flows through the capacitor 75, and the current flowing through the electromagnetic coil 32 increases as the capacitor 75 is charged. Therefore, as shown in FIG. 4B, the current (magnetic field) flowing through the electromagnetic coil 32 of the electromagnet 3 gradually increases. When the resistance of the electromagnetic coil 32 is R and the capacitance of the capacitor 75 is C, the time Δt that gradually increases to reach the predetermined current value is related to the time constant τ=R·C. This time Δt needs to be about 10 ms or more, as described above. On the other hand, when a copper wire having a diameter of about 1 mm (resistivity 1.71×10 ⁻⁸ Ω/m) is used as the electromagnetic coil 32, the length R is 100 m and the resistance R is 0.2 Ω. Then, the required capacitance C of the capacitor is 0.01 (s)/0.2 (Ω)=0.05 F (F: farad)=50 mF=50000 μF. In the future, in order to make this capacity as small as possible, there is a possibility that aluminum wire (having a resistivity about twice that of copper) having a higher resistivity than copper wire will be used, and coil optimization (reduction of coil wire diameter Considering the fact that the resistance is increased about 5 times by increasing the coil length), the capacitance of the capacitor 75 is preferably 5000 μF or more.

Also in the above-mentioned embodiment, even when the power supply circuit 6 is disconnected, the rapid change in the magnetic flux accompanies the generation of electromagnetic induction, and therefore it is necessary to be interrupted via the same circuit. Also shown in FIG. 4B is the change in current in the case of that interruption. That is, even if the circuit is disconnected by a switch (not shown), the electric charge accumulated in the capacitor 75 is discharged, and the current gradually decreases. Therefore, when the capacitor 75 is provided, not only the rising current gradually increases but also the falling current gradually decreases, which is preferable. In other words, in order to slow down the fall, in the case of inductive reactance, the same control as the control to slow down the rise is required when disconnecting the switch circuit. A gentle fall can be obtained.

As shown in FIG. 5A, the vapor deposition device (power supply circuit 6 and control circuit 7 are not shown) according to an embodiment of the present invention includes one of the electromagnet 3 mounted on the touch plate 4 and one of the electromagnets 3. A substrate holder 29 provided on the surface of the magnetic pole of the vapor deposition substrate 2 so as to hold the vapor deposition substrate 2 via the touch plate 4, and the vapor deposition mask 1 provided on the surface of the vapor deposition substrate 2 held by the substrate holder 29 opposite to the electromagnet 3. And a vapor deposition source 5 which is provided so as to face the vapor deposition mask 1 and vaporizes or sublimes the vapor deposition material. The vapor deposition mask 1 has a metal layer (metal support layer 12: see FIG. 5B) made of a magnetic material, and the electromagnet 3 applies a current to the electromagnetic coil 32 so as to attract the metal support layer 12 of the vapor deposition mask 1. It is connected to the power supply circuit 6 and the control circuit 7 (see FIGS. 1A to 4A) for applying voltage. The vapor deposition mask 1 is placed on the mask holder 15, and the substrate holder 29 and the support frame 41 holding the touch plate 4 are each lifted up. Then, the vapor deposition substrate 2 carried by a robot arm (not shown) is placed on the substrate holder 29, and the substrate holder 29 is lowered to bring the vapor deposition substrate 2 into contact with the vapor deposition mask 1. By further lowering the support frame 41, the touch plate 4 is superposed on the deposition target substrate 2. Then, the electromagnet 3 is mounted on the touch plate 4 by operating an electromagnet supporting member (not shown). The touch plate 4 is provided to flatten the deposition target substrate 2 and to cool the deposition target substrate 2 and the deposition mask 1 by circulating cooling water inside (not shown). The material and thickness of the touch plate 4 are determined in order to make the in-plane distribution of the magnetic field on the surface of the vapor deposition mask uniform.

As shown in the schematic view of FIG. 5C, the electromagnet 3 has an electromagnetic coil 32 wound around a magnetic core 31 made of an iron core or the like. In FIG. 5A, for example, since the size of the vapor deposition mask 1 is about 1.5 m×1.8 m, the electromagnet 3 having the magnetic core 31 having a cross section of about 5 cm square shown in FIG. FIG. 5 shows a structure in which a plurality of vapor deposition masks 1 are arranged according to the size of the vapor deposition mask 1 (in FIG. 5A, the horizontal direction is scaled down, and the number of electromagnets is reduced). In the example shown in FIG. 5A, electromagnetic coils 32 (each electromagnet is referred to as a unit electromagnet) wound around each magnetic core 31 of the electromagnet 3 are connected in series. However, the electromagnetic coils 32 of each unit electromagnet 3 may be connected in parallel. Also, several units may be connected in series. If the taps 32b to 32d are formed in the connection portion of the electromagnetic coil 32 of the unit electromagnet, the circuit structure as a whole corresponds to the structure shown in FIG. 1A. However, the tap may be formed in the middle of the electromagnetic coil 32 of the unit electromagnet. It is also possible to independently apply a current to a part of the unit electromagnet.

When a direct current is applied to the electromagnetic coil 32 of the electromagnet 3, a magnetic field H is generated according to the right-handed screw law, as shown in FIG. 5C. When the magnetic body is placed in the magnetic field H, magnetism corresponding to the magnitude of the magnetic field H is induced in the magnetic body. The magnitude of this magnetic field H is determined by the product N·I of the number N of turns of the electromagnetic coil 32 and the magnitude I of the flowing current, as described above. Therefore, the larger the number of turns N of the electromagnetic coil 32 and the larger the current I, the larger the magnetomotive force N·I can be obtained. However, since electromagnetic induction occurs in accordance with the rate of change of N·I, if the change is too large, trouble will occur as described above. Therefore, the above-mentioned control circuit 7 (FIGS. 1A to 4A) is formed so as to prevent this sudden change in the magnetic field H.

In the example shown in FIG. 5A, the periphery of the unit electromagnet is fixed with a resin 33 such as silicone rubber, silicone resin, or epoxy resin. The resin 33 is not always necessary, but the unit electromagnet can be fixed, and the electromagnet 3 can be easily handled. However, in the present embodiment, since this electromagnet is used in a vacuum state, the unit electromagnet is not solidified with the resin 33, but the surroundings are passed through so that the electromagnet can be cooled by heat radiation. be able to. At this time, the surface of the electromagnet is preferably a treated surface that has been subjected to blackening treatment such as alumite treatment. Further, the surface of the electromagnet may be a roughened surface having a roughness of, for example, 10 μm or more in terms of arithmetic mean roughness Ra. That is, it is preferable that the surface is roughened so that the surface roughness is Ra 10 μm or more. The surface roughness Ra of 10 μm means that the surface area is 2.18 times when the roughening is an ideal hemisphere. As a result, the heat dissipation effect is more than doubled. The cooling device has a broad sense including an electromagnet having a surface on which the treated surface of the electromagnet 3 is formed, in addition to such a device capable of heat radiation or water cooling. When a large amount of current is continuously applied, the electromagnet 3 may generate heat. In such a case, it is preferable to cool the electromagnet 3 with water.

As shown in FIG. 5A, the vapor deposition apparatus is provided with a substrate holder 29 and a mask holder 15. This substrate holder 29 is connected to a driving device (not shown) so that the peripheral portion of the deposition target substrate 2 can be held by a plurality of hook-shaped arms and can be moved up and down. The deposition target substrate 2 carried into the chamber by the robot arm is received by the hook-shaped arm, and the substrate holder 29 descends until the deposition target substrate 2 approaches the deposition mask 1. An image pickup device (not shown) is also provided so that alignment can be performed. The touch plate 4 is supported by the support frame 41, and is connected via the support frame 41 to a driving device that lowers the touch plate 4 until it comes into contact with the deposition target substrate 2. By lowering the touch plate 4, the deposition target substrate 2 is flattened. When aligning the vapor deposition mask 1 and the vapor deposition substrate 2 of the present embodiment, the vapor deposition apparatus captures the vapor deposition mask 1 and the vapor deposition substrate 2 while imaging the alignment marks formed on the vapor deposition mask 1 and the vapor deposition substrate 2, respectively. Also provided is a fine movement device that moves the vapor deposition mask 1 relatively. The alignment is performed with the energization of the electromagnet 3 stopped so that the deposition mask 1 is not unnecessarily attracted by the electromagnet 3. Although not shown, the vapor deposition apparatus is also provided with a device in which the entire device shown in FIG. 5A is placed in a chamber and the inside is evacuated.

The vapor deposition mask 1 includes a resin film 11, a metal supporting layer 12, and a frame (frame body) 14 formed around the resin film 11, the metal supporting layer 12, and the vapor deposition mask 1 includes a frame 14 as shown in FIGS. 5A and 5B. Are placed on the mask holder 15. A magnetic material is used for the metal supporting layer 12. As a result, an attractive force acts between the electromagnet 3 and the magnetic core 31, and the substrate 2 to be deposited is sandwiched and adsorbed. The metal supporting layer 12 may be made of a ferromagnetic material. In this case, the metal supporting layer 12 is magnetized by the strong magnetic field of the electromagnet 3 (a state in which strong magnetization remains even if the external magnetic field is removed). When such a ferromagnetic material is used, when the electromagnet 3 and the vapor deposition mask 1 are separated, it is easier to separate the electromagnet 3 by applying a current in the opposite direction. Even when a strong magnetic field for such magnetization is generated, the control circuit 7 (see FIGS. 1A to 4A) of the present embodiment is provided, so that no trouble occurs due to electromagnetic induction.

As the metal supporting layer 12, for example, Fe, Co, Ni, Mn or alloys thereof can be used. Among them, Invar (alloy of Fe and Ni) is particularly preferable because it has a small difference in coefficient of linear expansion from the substrate to be vapor-deposited 2 and has almost no expansion due to heat. The metal supporting layer 12 is formed to have a thickness of about 5 μm to 30 μm. Even if the metal supporting layer 12 is not provided, the surrounding frame body 14 may be formed of a magnetic material.

In FIG. 5B, the opening 11a of the resin film 11 and the opening 12a of the metal supporting layer 12 are tapered so as to taper toward the deposition target substrate 2 (see FIG. 5A). The reason is explained below. As the vapor deposition source 5, various vapor deposition sources such as a dot shape, a linear shape, and a planar shape can be used. For example, a line-type vapor deposition source 5 (extending in a direction perpendicular to the paper surface of FIG. 5A) formed by arranging crucibles linearly is scanned from, for example, the left end to the right end of the paper surface, so that the entire surface of the deposition target substrate 2 is scanned. Deposition is performed on. As described above, the vapor deposition source 5 radiates the vapor deposition material in such a manner that the cross section of the radiation beam of the vapor deposition material, which is determined by the shape of the crucible, has a fan-shaped cross section that spreads at a constant angle θ. Even the vapor-deposited particles on the side surface of the fan-shaped cross-sectional shape reach the predetermined place of the vapor-deposited substrate 2 without being blocked by the metal support layer 12 and the resin film 11, and the openings of the metal support layer 12 and the resin film 11 are formed. 12a and the opening 11a are formed in a tapered shape. If the opening 12a of the metal supporting layer 12 is formed large, it may not be tapered. However, from the viewpoint of enhancing the effect of attraction by the electromagnet 3 described above, it is preferable that the electromagnet 3 is formed to be as large as possible so as to reach as close as possible to the opening 11a of the resin film.

(Vapor deposition method)
Next, a vapor deposition method according to an embodiment of the present invention will be described. In the vapor deposition method of one embodiment of the present invention, as shown in FIG. 5A, the electromagnet 3, the vapor deposition substrate 2, and the vapor deposition mask 1 having a magnetic material are superposed on each other, and the power supply circuit 6 (see FIG. 1A to 4A) to adsorb the vapor deposition substrate 2 and the vapor deposition mask 1 by energizing the electromagnet 3 and scattering of the vapor deposition material 51 from the vapor deposition source 5 arranged apart from the vapor deposition mask 1 The step of depositing a vapor deposition material on the vapor deposition substrate 2 is included. Then, when the electromagnet 3 and the vapor deposition mask 1 are attracted to each other, a current is applied to the electromagnet 3 by gently changing the magnetic field generated by the electromagnet 3. Before the attraction by the electromagnet 3, the vapor deposition mask 1 and the vapor deposition substrate 2 may be aligned with each other.

As described above, the vapor deposition substrate 2 is overlaid on the vapor deposition mask 1. The alignment between the vapor deposition substrate 2 and the vapor deposition mask 1 is performed as follows. This is performed by moving the vapor deposition substrate 2 relative to the vapor deposition mask 1 while observing the alignment marks for alignment formed on the vapor deposition substrate 2 and the vapor deposition mask 1 with an imaging device. At this time, since it can be performed without generating a magnetic field by the electromagnet 3, accurate alignment can be performed without being affected by the magnetic field (suction). By this method, the opening 11a of the vapor deposition mask 1 and the deposition location of the deposition target substrate 2 (for example, in the case of an organic EL display device described later, the pattern of the first electrode of the device substrate) can be matched. After the alignment, a current is applied to the electromagnetic coil 32. At this time, as described above, although not shown in FIG. 5A, since the control circuit 7 for gently changing the magnetic field generated by the electromagnet 3 is inserted between the power supply circuit 6 and the electromagnet 3, the magnetic flux The changes will be gradual. When the magnetic flux is stable, the magnetic flux is maintained and no electromagnetic induction occurs, so that a stable magnetic field can be obtained. As a result, a strong attractive force acts between the electromagnet 3 and the vapor deposition mask 1, and the vapor deposition substrate 2 and the vapor deposition mask 1 are firmly adhered to each other.

After that, as shown in FIG. 5A, the vapor deposition material 51 is deposited on the vapor deposition substrate 2 by scattering (vaporization or sublimation) of the vapor deposition material 51 from the vapor deposition source 5 which is arranged apart from the vapor deposition mask 1. Specifically, as described above, a crucible or a line source formed by arranging linearly is used, but the present invention is not limited to this. For example, when manufacturing an organic EL display device, a plurality of types of vapor deposition masks having openings 11a formed in some pixels are prepared, the vapor deposition mask 1 is replaced, and an organic layer is formed by a plurality of vapor deposition operations.

According to this vapor deposition method, the magnetic field (magnetic flux) applied by the electromagnet 3 is moderated by the control circuit (see FIGS. 1A to 4A) in the initial rise of the application, so that electromotive force due to electromagnetic induction is suppressed. As a result, the overcurrent that flows in the deposition target substrate 2 due to electromagnetic induction is suppressed, and the influence on the elements, organic materials, and the like formed on the deposition target substrate 2 can be suppressed.

(Method for manufacturing organic EL display device)
Next, a method of manufacturing an organic EL display device using the vapor deposition method of the above embodiment will be described. Since manufacturing methods other than the vapor deposition method can be performed by known methods, a method of stacking organic layers by the vapor deposition method of the present invention will be mainly described with reference to FIGS.

According to the method for manufacturing an organic EL display device of one embodiment of the present invention, a TFT (not shown), a flattening film, and a first electrode (eg, anode) 22 are formed on a support substrate 21, and the vapor deposition mask 1 is positioned on one surface of the TFT. In the case of aligning and stacking and depositing the organic material 51, it includes forming the laminated film 25 of the organic layer by using the above-described vapor deposition method. A second electrode 26 (see FIG. 7B; cathode) is formed on the laminated film 25.

The support substrate 21 such as a glass plate is not completely illustrated, but a switch element such as a TFT is formed for each RGB subpixel of each pixel, and the first electrode 22 connected to the switch element is flat. It is formed of a combination of a metal film such as Ag or APC and an ITO film on the chemical conversion film. As shown in FIGS. 7A and 7B, an insulating bank 23 made of SiO ₂ or an acrylic resin, a polyimide resin, or the like for partitioning the sub-pixels is formed between the sub-pixels. The above vapor deposition mask 1 is aligned and fixed on the insulating bank 23 of the support substrate 21. As shown in FIG. 5A described above, this fixing is performed by, for example, using an electromagnet 3 provided via a touch plate 4 on the opposite side of the vapor deposition surface of the support substrate 21 and adsorbing. As described above, since the magnetic material is used for the metal supporting layer 12 of the vapor deposition mask 1 (see FIG. 5B), when a magnetic field is applied by the electromagnet 3, the metal supporting layer 12 of the vapor deposition mask 1 is magnetized to have a magnetic core. A suction force is generated between 31 and 31. Even when the electromagnet 3 does not have the magnetic core 31, it is attracted by the magnetic field generated by the current flowing through the electromagnetic coil 32. The opening 11 a of the vapor deposition mask 1 is formed smaller than the distance between the surfaces of the insulating bank 23. An organic material is prevented from being deposited on the side wall of the insulating bank 23 as much as possible to prevent a decrease in luminous efficiency of the organic EL display device.

In this state, as shown in FIG. 7A, the organic material 51 is scattered from the vapor deposition source (crucible) 5 in the vapor deposition apparatus, and the organic material 51 is deposited only on the portion of the vapor deposition mask 1 where the opening 11a is formed. 51 is vapor-deposited, and the laminated film 25 of the organic layer is formed on the first electrode 22 of the desired sub-pixel. As described above, since the opening 11a of the vapor deposition mask 1 is formed smaller than the space between the surfaces of the insulating bank 23, the organic material 51 is less likely to be deposited on the side wall of the insulating bank 23. As a result, as shown in FIGS. 7A and 7B, the laminated film 25 of the organic layer is deposited almost only on the first electrode 22. This vapor deposition process may be performed for each sub-pixel by sequentially exchanging the vapor deposition mask 1. A vapor deposition mask in which the same material is vapor deposited on a plurality of sub-pixels at the same time may be used. When the vapor deposition mask 1 is replaced, a power circuit for removing the magnetic field to the metal supporting layer 12 (see FIG. 5B) of the vapor deposition mask 1 by the electromagnet 3 (see FIG. 5A) not shown in FIG. 7A. 6 (see FIGS. 1A-4A) is turned off. Also at this time, the control circuit 7 is formed so that the elements such as the TFT formed on the support substrate 21 can operate so as to suppress the influence of electromagnetic induction.

7A to 7B, the laminated film 25 of the organic layer is simply shown as one layer, but the laminated film 25 of the organic layer may be formed of a laminated film of a plurality of layers made of different materials. For example, as the layer in contact with the anode 22, there may be a case where a hole injection layer made of a material having a high ionization energy matching property that improves hole injection properties is provided. On this hole injection layer, a hole transport layer capable of improving stable transport of holes and confining electrons (energy barrier) to the light emitting layer is formed of, for example, an amine-based material. Further, a light emitting layer selected according to the emission wavelength is formed thereon by doping Alq ₃ for red and green with a red or green organic fluorescent material. A DSA-based organic material is used as the blue-based material. On the light emitting layer, an electron transporting layer for further improving the electron injecting property and stably transporting the electron is formed by Alq ₃ or the like. A laminated film 25 of an organic layer is formed by laminating each of these layers by several tens of nm. An electron injection layer for improving electron injection properties such as LiF and Liq may be provided between the organic layer and the metal electrode. In the present embodiment, these are collectively referred to as the organic layer laminated film 25. Such a laminated film 25 may be affected by electromagnetic induction, but in the present embodiment, as described above, the control circuits 71 to 75 (FIGS. 1A to 4A) are provided between the power supply circuit 6 and the electromagnet 3. Since they are connected, the rise is gentle and the influence of electromagnetic induction is suppressed.

In the light emitting layer of the laminated film 25 of organic layers, organic layers of materials corresponding to the colors of RGB are deposited. In addition, the hole transport layer, the electron transport layer, and the like are preferably separately deposited with materials suitable for the light emitting layer, when light emission performance is important. However, in consideration of the material cost, the same material may be laminated in common for two colors of RGB or three colors. When materials common to two or more color sub-pixels are stacked, a vapor deposition mask having openings formed in the common sub-pixels is formed. When vapor deposition layers are different for individual sub-pixels, for example, one vapor deposition mask 1 can be used for R sub-pixels to successively vapor-deposit each organic layer. In addition, when a common organic layer is deposited for RGB, the organic layer of each sub-pixel is vapor deposited up to the bottom side of the common layer, and an aperture is formed for RGB at the common organic layer. The mask 1 is used to deposit the organic layers of all pixels at one time. In the case of mass production, a number of chambers of the vapor deposition apparatus are arranged, different vapor deposition masks 1 are attached to the chambers, and the support substrate 21 (the vapor deposition target substrate 2) moves continuously in each vapor deposition apparatus. Vapor deposition may be performed.

When the formation of the laminated film 25 of all the organic layers including the electron injection layer such as the LiF layer is completed, the power supply circuit 6 of the electromagnet 3 is turned off and the electromagnet 3 is separated from the vapor deposition mask 1 as described above. After that, the second electrode (for example, cathode) 26 is formed on the entire surface. The example shown in FIG. 7B is a top emission type and emits light from the surface opposite to the supporting substrate 21 in the figure, so that the second electrode 26 is made of a translucent material such as a thin film of Mg-Ag. It is formed by a eutectic film. Alternatively, Al or the like may be used. In the case of the bottom emission type in which light is emitted from the support substrate 21 side, ITO, In ₃ O ₄ or the like is used for the first electrode 22, and the second electrode 26 is made of a metal having a small work function, for example, Mg, K, Li, Al, etc. can be used. A protective film 27 made of, for example, Si ₃ N ₄ is formed on the surface of the second electrode 26. The entire structure is sealed by a sealing layer (not shown) made of glass, resin film, or the like, so that the laminated film 25 of the organic layer does not absorb moisture. Further, the organic layer can be made as common as possible, and a color filter can be provided on the surface side of the organic layer.

(Summary)
(1) The vapor deposition apparatus according to the first embodiment of the present invention includes an electromagnet, a substrate holder that holds a substrate to be vapor-deposited to be provided at a position facing one magnetic pole of the electromagnet, and the substrate holder. A vapor deposition mask provided on a surface of the substrate to be vapor deposited on which the electromagnet is not provided, a vapor deposition mask having a magnetic material, a vapor deposition source provided to face the vapor deposition mask and vaporizing or sublimating a vapor deposition material, and the electromagnet. And a control circuit that is connected between the power supply circuit and the electromagnet and that gently changes a magnetic field generated by the electromagnet when a current is applied to the electromagnet.

According to the vapor deposition apparatus of one embodiment of the present invention, since the vapor deposition mask is attracted by the electromagnet, the vapor deposition substrate and the vapor deposition mask can be easily aligned with each other without applying a magnetic field. Further, by applying the magnetic field, the deposition target substrate and the deposition mask sandwiched therebetween can be sufficiently brought into close contact with each other. Moreover, since the control circuit that moderates the change in the magnetic field generated by the electromagnet is inserted between the power supply circuit and the electromagnetic coil of the electromagnet, even if a current is applied to the electromagnet, the TFT formed on the deposition target substrate It is possible to suppress elements such as the above from being affected by electromagnetic induction generated by the application of electric current.

(2) It is preferable that the control circuit includes a circuit that sets a rise time from a current supplied to an electromagnetic coil of the electromagnet to a predetermined current in the electromagnetic coil on the order of milliseconds. By doing so, the rise time becomes 100 times or more that of the conventional one, and the change in the magnetic flux becomes small, so that the influence of electromagnetic induction can be prevented.

(3) A circuit in which the control circuit gradually changes a magnetic field generated by the electromagnet by sequentially switching connection between a plurality of taps formed in the coil of the electromagnet and the power supply circuit. Good. With this structure, since the number of turns of the coil gradually increases, the magnetic field gradually increases and the rise time can be extended.

(4) The power supply circuit includes an AC power supply and a transformer having a plurality of taps in a secondary coil, and the control circuit sequentially switches the plurality of taps of the secondary coil and the switch circuit. And a rectifying circuit for converting the AC output of the above into a DC, and the output of the rectifying circuit is connected to the coil of the electromagnet. Also in this configuration, since the current gradually increases, the magnetic field gradually increases and the rise time can be extended.

(5) The control circuit is formed by a chopper control circuit, and in the chopper control circuit, a switch circuit and an inductive reactance element are provided between the first terminals of the pair of output terminals of the power supply circuit and one end of the coil of the electromagnet. Connected in series, between the connection point of the switch circuit with the inductive reactance element and the second terminal of the pair of output terminals of the power supply circuit, in parallel with the electromagnet, and opposite to the polarity of the power supply circuit. A circuit in which a diode is connected in the direction may be used. With this structure, since the rise time is intermittent, the rise time can be extended similarly.

(6) Since the switch circuit is formed by one selected from a GTO thyristor, an IGBT, a diode, a bipolar transistor, and a field effect transistor, the rise time can be interrupted with a simple configuration.

(7) The control circuit may include a capacitive reactance element connected in parallel with the electromagnet between a pair of output terminals of the power supply circuit. With this configuration, the rise time can be extended only by inserting a capacitor, for example.

(8) It is preferable that the capacitive reactance element has a capacitance of at least 5000 μF because the rise of the current can be moderated to the extent that the problem of electromagnetic induction does not occur. In addition, the capacitive reactance is particularly excellent from the viewpoint of preventing the influence of electromagnetic induction because the fall when the power supply circuit is disconnected is automatically slowed down.

(9) The magnetic substance included in the vapor deposition mask may be a ferromagnetic substance.

(10) A circuit in which the electromagnet is formed of a plurality of electromagnet elements for one vapor deposition mask, and the power supply circuit independently changes a generated magnetic field in at least one of the plurality of electromagnet elements. , The strength of the magnetic field of each electromagnet can be adjusted.

(11) It is preferable that a cooling device that cools the electromagnet is provided close to the electromagnet because the electromagnet can be cooled easily even when the current is large.

(12) It is preferable that the surface of the electromagnet is at least one of an alumite-treated surface, a blackening-treated surface, and a roughening-treated surface in order to improve heat dissipation.

(13) It is more preferable that the roughened surface has a surface roughness Ra of 10 μm or more.

(14) Further, in the vapor deposition method of the second embodiment of the present invention, an electromagnet, a vapor deposition substrate, and a vapor deposition mask having a magnetic material are superposed on each other, and the electromagnet is energized from a power supply circuit. A step of adsorbing the vapor deposition substrate and the vapor deposition mask, and a step of depositing the vapor deposition material on the vapor deposition substrate by scattering the vapor deposition material from a vapor deposition source that is arranged apart from the vapor deposition mask, This includes applying a current to the electromagnet by gently changing the magnetic field generated by the electromagnet when the electromagnet and the vapor deposition mask are attracted to each other.

According to the vapor deposition method of the second embodiment of the present invention, the vapor deposition substrate and the vapor deposition mask can be aligned with each other without attraction by an electromagnet, and thus can be easily performed. In addition, by driving the electromagnet thereafter, the deposition target substrate and the deposition mask can be completely adsorbed. At this time, since the magnetic field is gently generated, damage to the element formed on the deposition target substrate and deterioration of the characteristics of the element and the organic layer can be suppressed.

(15) It is preferable that the current is applied to the electromagnet so that the rise time from the application of the current to the electromagnetic coil of the electromagnet until the predetermined current is reached in the electromagnetic coil is on the order of milliseconds. By increasing the rise time, the change in magnetic flux is reduced, and the influence of electromagnetic induction can be reduced.

(16) By changing the number of turns of the coil of the electromagnet and passing an electric current, the magnetic field generated by the electromagnet can be gently changed.

(17) By applying the current to the coil of the electromagnet via the reactance element, the generation of the magnetic field can be moderated.

(18) Furthermore, in the method of manufacturing an organic EL display device according to the third embodiment of the present invention, at least a TFT and a first electrode are formed on a supporting substrate, and the above (14) to (17) are formed on the supporting substrate. Forming a laminated film of organic layers by vapor-depositing an organic material by using the vapor deposition method described in any one of 1 to 3, and forming a second electrode on the laminated film.

According to the method for manufacturing the organic EL display device of the third embodiment of the present invention, when the organic EL display device is manufactured, the characteristics of the element and the organic layer formed on the support substrate are not deteriorated, and the delicate A display screen with various patterns can be obtained.

1 Vapor Deposition Mask 2 Deposition Substrate 3 Electromagnet 4 Touch Plate 5 Vapor Deposition Source 6 Power Supply Circuit 7 Control Circuit 11 Resin Film 11a Opening 12 Metal Support Layer 12a Opening 14 Frame 15 Mask Holder 21 Support Substrate 22 First Electrode 23 Bank 25 Laminated Film 26 Second electrode 27 Protective film 29 Substrate holder 31 Magnetic core 32 Electromagnetic coil 33 Resin 41 Support frame

Claims (5)

An electromagnet,
A substrate holder for holding a vapor deposition substrate to be provided at a position facing one magnetic pole of the electromagnet;
An evaporation mask having a magnetic material, which is provided on the surface of the deposition target substrate held by the substrate holder on which the electromagnet is not provided,
A power supply circuit for driving the electromagnet,
A control circuit that is connected between the power supply circuit and the electromagnet and that is formed to reduce an induced electromotive force that may occur due to a change in current supplied to the electromagnet;
An AC power supply is used as the power supply circuit,
The anode and the diode series circuit having a cathode connected to the second diode, the anode and cathode bridge circuit constituted by the connected thyristors in series circuit of a second thyristor of the first thyristor of the first diode A cathode of the first diode and the cathode of the first thyristor are connected to each other, and an anode of the second diode and the anode of the second thyristor are connected to each other,
One output terminal of the AC power supply is connected to a connection point of the first and second diodes,
The other output terminal of the AC power supply is connected to the connection point of the first and second thyristors,
Connected portion of the anodes in the bridge circuit to one end of the series circuit of the smoothing coil and coil of the electromagnet is connected, connecting portions of the cathodes of the said bridge circuit is connected to the other end, the deposition apparatus .. The vapor deposition apparatus according to claim 1, wherein the vapor deposition substrate has an organic layer that constitutes a TFT and/or a light emitting element. The vapor deposition apparatus according to claim 1 or 2, wherein the vapor deposition mask is a hybrid mask in which a magnetic metal support layer is attached to a resin film. Using the vapor deposition device according to any one of claims 1 to 3,
A step of superposing an electromagnet, a vapor deposition substrate, and a vapor deposition mask having a magnetic material, and adsorbing the vapor deposition substrate and the vapor deposition mask by energizing the electromagnet from a power supply circuit; and the vapor deposition mask And a step of depositing the vapor deposition material on the vapor deposition target substrate by scattering of the vapor deposition material from a vapor deposition source arranged apart from
Including,
A vapor deposition method in which, when the electromagnet and the vapor deposition mask are attracted, a current is applied to the electromagnet by gently changing a magnetic field generated by the electromagnet. Forming at least a TFT and a first electrode on a supporting substrate,
Forming a laminated film of organic layers on the supporting substrate by depositing an organic material using the vapor deposition method according to claim 4;
A method of manufacturing an organic EL display device, comprising forming a second electrode on the laminated film.

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