KR20140065340A - 복수의 발광 적층형 층들을 갖는 발광 디바이스 - Google Patents

복수의 발광 적층형 층들을 갖는 발광 디바이스 Download PDF

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Publication number
KR20140065340A
KR20140065340A KR1020130139845A KR20130139845A KR20140065340A KR 20140065340 A KR20140065340 A KR 20140065340A KR 1020130139845 A KR1020130139845 A KR 1020130139845A KR 20130139845 A KR20130139845 A KR 20130139845A KR 20140065340 A KR20140065340 A KR 20140065340A
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KR
South Korea
Prior art keywords
light
light emitting
mqw structure
emitting device
layer
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Ceased
Application number
KR1020130139845A
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English (en)
Korean (ko)
Inventor
민-슨 시에
위-치에 린
롱-렌 리
Original Assignee
에피스타 코포레이션
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Priority claimed from US13/683,476 external-priority patent/US8927958B2/en
Application filed by 에피스타 코포레이션 filed Critical 에피스타 코포레이션
Publication of KR20140065340A publication Critical patent/KR20140065340A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

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  • Led Devices (AREA)
KR1020130139845A 2012-11-21 2013-11-18 복수의 발광 적층형 층들을 갖는 발광 디바이스 Ceased KR20140065340A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/683,476 2012-11-21
US13/683,476 US8927958B2 (en) 2011-07-12 2012-11-21 Light-emitting element with multiple light-emitting stacked layers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020180061939A Division KR20180064348A (ko) 2012-11-21 2018-05-30 복수의 발광 적층형 층들을 갖는 발광 디바이스

Publications (1)

Publication Number Publication Date
KR20140065340A true KR20140065340A (ko) 2014-05-29

Family

ID=50625700

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020130139845A Ceased KR20140065340A (ko) 2012-11-21 2013-11-18 복수의 발광 적층형 층들을 갖는 발광 디바이스
KR1020180061939A Ceased KR20180064348A (ko) 2012-11-21 2018-05-30 복수의 발광 적층형 층들을 갖는 발광 디바이스

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020180061939A Ceased KR20180064348A (ko) 2012-11-21 2018-05-30 복수의 발광 적층형 층들을 갖는 발광 디바이스

Country Status (5)

Country Link
JP (1) JP2014103391A (enrdf_load_stackoverflow)
KR (2) KR20140065340A (enrdf_load_stackoverflow)
CN (1) CN103840045A (enrdf_load_stackoverflow)
DE (1) DE102013108782B4 (enrdf_load_stackoverflow)
TW (1) TWI589019B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190102293A (ko) * 2017-02-24 2019-09-03 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 칩

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593289B (zh) * 2011-01-10 2015-05-20 晶元光电股份有限公司 发光元件
US10396240B2 (en) * 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
US11056434B2 (en) * 2017-01-26 2021-07-06 Epistar Corporation Semiconductor device having specified p-type dopant concentration profile
CN113140657B (zh) * 2021-05-13 2022-04-19 西安瑞芯光通信息科技有限公司 一种紫外led外延结构及其制备方法

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JPH11135838A (ja) * 1997-10-20 1999-05-21 Ind Technol Res Inst 白色発光ダイオード及びその製造方法
JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP4140157B2 (ja) * 1999-12-28 2008-08-27 東芝ライテック株式会社 発光ダイオードを用いた照明用光源および照明装置
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
KR100631832B1 (ko) 2003-06-24 2006-10-09 삼성전기주식회사 백색 발광소자 및 그 제조방법
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
CN100349306C (zh) * 2004-08-27 2007-11-14 中国科学院半导体研究所 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法
DE102004047763A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Mehrfachleuchtdiodenanordnung
JP4760082B2 (ja) * 2005-03-25 2011-08-31 日亜化学工業株式会社 発光装置、発光素子用蛍光体及びその製造方法
JP2007095844A (ja) 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
DE102006051745B4 (de) * 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
JP2008141118A (ja) 2006-12-05 2008-06-19 Rohm Co Ltd 半導体白色発光装置
JP2009152297A (ja) 2007-12-19 2009-07-09 Rohm Co Ltd 半導体発光装置
JP2010267571A (ja) * 2009-05-18 2010-11-25 Toshiba Lighting & Technology Corp 照明装置
EP2367203A1 (en) * 2010-02-26 2011-09-21 Samsung LED Co., Ltd. Semiconductor light emitting device having multi-cell array and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190102293A (ko) * 2017-02-24 2019-09-03 오스람 옵토 세미컨덕터스 게엠베하 광전자 반도체 칩
US11094844B2 (en) 2017-02-24 2021-08-17 Osram Oled Gmbh Optoelectronic semiconductor chip with two separate light emitting layers

Also Published As

Publication number Publication date
DE102013108782A1 (de) 2014-05-22
TW201421737A (zh) 2014-06-01
CN103840045A (zh) 2014-06-04
JP2014103391A (ja) 2014-06-05
KR20180064348A (ko) 2018-06-14
TWI589019B (zh) 2017-06-21
DE102013108782B4 (de) 2024-05-08

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