CN103840045A - 具有多个发光叠层的发光装置 - Google Patents

具有多个发光叠层的发光装置 Download PDF

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Publication number
CN103840045A
CN103840045A CN201310594256.5A CN201310594256A CN103840045A CN 103840045 A CN103840045 A CN 103840045A CN 201310594256 A CN201310594256 A CN 201310594256A CN 103840045 A CN103840045 A CN 103840045A
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CN
China
Prior art keywords
light
quantum well
multiple quantum
emitting
well structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310594256.5A
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English (en)
Chinese (zh)
Inventor
谢明勋
林义杰
李荣仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/683,476 external-priority patent/US8927958B2/en
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN103840045A publication Critical patent/CN103840045A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

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  • Led Devices (AREA)
CN201310594256.5A 2012-11-21 2013-11-21 具有多个发光叠层的发光装置 Pending CN103840045A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/683,476 2012-11-21
US13/683,476 US8927958B2 (en) 2011-07-12 2012-11-21 Light-emitting element with multiple light-emitting stacked layers

Publications (1)

Publication Number Publication Date
CN103840045A true CN103840045A (zh) 2014-06-04

Family

ID=50625700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310594256.5A Pending CN103840045A (zh) 2012-11-21 2013-11-21 具有多个发光叠层的发光装置

Country Status (5)

Country Link
JP (1) JP2014103391A (enrdf_load_stackoverflow)
KR (2) KR20140065340A (enrdf_load_stackoverflow)
CN (1) CN103840045A (enrdf_load_stackoverflow)
DE (1) DE102013108782B4 (enrdf_load_stackoverflow)
TW (1) TWI589019B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593289A (zh) * 2011-01-10 2012-07-18 晶元光电股份有限公司 发光元件
CN108365062A (zh) * 2017-01-26 2018-08-03 晶元光电股份有限公司 半导体元件
CN113140657A (zh) * 2021-05-13 2021-07-20 西安瑞芯光通信息科技有限公司 一种紫外led外延结构及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10396240B2 (en) * 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
DE102017103856A1 (de) 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163038A (en) * 1997-10-20 2000-12-19 Industrial Technology Research Institute White light-emitting diode and method of manufacturing the same
CN1636259A (zh) * 2000-05-15 2005-07-06 通用电气公司 用于发光二极管器件的发白光的磷光体混合物
CN102169934A (zh) * 2010-02-26 2011-08-31 三星Led株式会社 具有多单元阵列的半导体发光装置及其制造方法

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JP2000299493A (ja) * 1999-04-15 2000-10-24 Daido Steel Co Ltd 半導体面発光素子
JP4140157B2 (ja) * 1999-12-28 2008-08-27 東芝ライテック株式会社 発光ダイオードを用いた照明用光源および照明装置
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
KR100631832B1 (ko) 2003-06-24 2006-10-09 삼성전기주식회사 백색 발광소자 및 그 제조방법
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
CN100349306C (zh) * 2004-08-27 2007-11-14 中国科学院半导体研究所 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法
DE102004047763A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Mehrfachleuchtdiodenanordnung
JP4760082B2 (ja) * 2005-03-25 2011-08-31 日亜化学工業株式会社 発光装置、発光素子用蛍光体及びその製造方法
JP2007095844A (ja) 2005-09-27 2007-04-12 Oki Data Corp 半導体発光複合装置
DE102006051745B4 (de) * 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
JP2008141118A (ja) 2006-12-05 2008-06-19 Rohm Co Ltd 半導体白色発光装置
JP2009152297A (ja) 2007-12-19 2009-07-09 Rohm Co Ltd 半導体発光装置
JP2010267571A (ja) * 2009-05-18 2010-11-25 Toshiba Lighting & Technology Corp 照明装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6163038A (en) * 1997-10-20 2000-12-19 Industrial Technology Research Institute White light-emitting diode and method of manufacturing the same
CN1636259A (zh) * 2000-05-15 2005-07-06 通用电气公司 用于发光二极管器件的发白光的磷光体混合物
CN102169934A (zh) * 2010-02-26 2011-08-31 三星Led株式会社 具有多单元阵列的半导体发光装置及其制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102593289A (zh) * 2011-01-10 2012-07-18 晶元光电股份有限公司 发光元件
CN108365062A (zh) * 2017-01-26 2018-08-03 晶元光电股份有限公司 半导体元件
CN113140657A (zh) * 2021-05-13 2021-07-20 西安瑞芯光通信息科技有限公司 一种紫外led外延结构及其制备方法
CN113140657B (zh) * 2021-05-13 2022-04-19 西安瑞芯光通信息科技有限公司 一种紫外led外延结构及其制备方法

Also Published As

Publication number Publication date
DE102013108782A1 (de) 2014-05-22
TW201421737A (zh) 2014-06-01
KR20140065340A (ko) 2014-05-29
JP2014103391A (ja) 2014-06-05
KR20180064348A (ko) 2018-06-14
TWI589019B (zh) 2017-06-21
DE102013108782B4 (de) 2024-05-08

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Application publication date: 20140604