201114066 【先前技術】 發光二極體（Light-emitting Diode ; LED係一種固態半導體 元件’其至少包含一 p-n接面（p-njunction) ’此ρ·η接面係形成於 Ρ型與η型半導體層之間。當於ρ_η接面上施加一定程度之偏壓時， Ρ型半導體層中之電洞與η型半導體層中之電子會結合而釋放出 光。此光產生之區域一般又稱為發光區（light-emittingregion)。 LED的主要特徵在於尺寸小、發光效率高、壽命長、反應快 速、可靠度高和色度良好’目前已經廣泛地使用在電器、汽車、招 牌和交通號誌上。隨著全彩LED的問世，LED已逐漸取代傳統的 • 照明設備’如螢光燈和白熱燈泡。 上述發光二極體可進一步地以基板經由焊塊或膠材與一 基座連接’以形成一發光裝置。另外，基座更具有至少一電路， 經由一導電結構，例如金屬線，電連接發光裝置之電極。 【發明内容】 一發光元件之晶圓包含支持基板；一透明黏結層位於支持 基板之上；以及一發光疊層位於透明黏結層之上。發光疊層至 • 少包含一第了半導體層；一活性層位於第-半導體層之上:以 及Γ"第二半導體層位於活性層之上；其中分別在第一半導體層 與第二半導體層之上具有-第一電極與一第二電極。接著從支 持基板之底面移除支持基板之一部分以形成與活性層不平行 之一第一下表面。第一下表面與支持基板之一上表面夾有一第 一夾角γ第一夾角約為20。〜70。。形成一反射層於第一下表面 之下，形成一金屬基板於反射層之下，金屬基板與支持基板 直接接觸。 本發明之第二實施例與第一實施例類似，差異在於支持基 板包含-第-下表面和-第二下表面。第一下表面和第二下^ 201114066 面於支持基板之一上表面相接，並分別與上表面夾有一第一夾 角與一第二夾角。 本發明之第三實施例與第二實酬類似，差異在於一第一 下表面和一第二下表面於金屬基板之一底面相接。 本發明之第四實施例與第一實施例類似，差異在於支持基 板包含一凹下表面。 本發明之第五實施例與第四實施例類似，差異在於支持基 板包含一凸下表面。201114066 [Prior Art] Light-emitting diode (LED) is a solid-state semiconductor device that includes at least a pn junction (p-njunction). This ρ·η junction is formed in a Ρ-type and an η-type semiconductor. Between the layers, when a certain degree of bias is applied to the ρ_η junction, the holes in the Ρ-type semiconductor layer and the electrons in the n-type semiconductor layer combine to emit light. The region in which the light is generated is generally referred to as luminescence. Light-emitting region The main characteristics of LEDs are small size, high luminous efficiency, long life, fast response, high reliability and good chromaticity. At present, they have been widely used in electrical appliances, automobiles, signboards and traffic signs. With the advent of full-color LEDs, LEDs have gradually replaced traditional lighting devices such as fluorescent lamps and incandescent bulbs. The above-mentioned light-emitting diodes can be further connected to a substrate via solder bumps or glue to form a The illuminating device further has at least one circuit electrically connected to the electrode of the illuminating device via a conductive structure, such as a metal wire. The support substrate is included; a transparent adhesive layer is disposed on the support substrate; and a light emitting layer is disposed on the transparent adhesive layer. The light emitting layer comprises: a semiconductor layer is less included; and an active layer is disposed on the first semiconductor layer: And a second semiconductor layer on the active layer; wherein the first semiconductor layer and the second semiconductor layer have a first electrode and a second electrode respectively. Then, one part of the support substrate is removed from the bottom surface of the support substrate Forming a first lower surface that is not parallel to the active layer. The first lower surface and the upper surface of one of the support substrates have a first angle γ of a first angle of about 20 to 70. A reflective layer is formed under the first Below the surface, a metal substrate is formed under the reflective layer, and the metal substrate is in direct contact with the support substrate. The second embodiment of the present invention is similar to the first embodiment except that the support substrate includes a -first-lower surface and a second a lower surface, the first lower surface and the second lower surface of the support substrate are joined to each other, and respectively have a first angle and a second angle with the upper surface. The third embodiment is similar to the second embodiment in that a first lower surface and a second lower surface are in contact with one of the bottom surfaces of the metal substrate. The fourth embodiment of the present invention is similar to the first embodiment in that the difference is in support. The substrate comprises a concave surface. The fifth embodiment of the invention is similar to the fourth embodiment, with the difference that the support substrate comprises a convex lower surface.
【實施方式】 =㈣之實施例會被詳細地描述，並且繪製於圖式令，相 同或類似的部分會以相_號碼在各圖式以及說明出現。 -，f上ί圖係第—實施例之製造流程示意圖。如第1圖所 :於包 2 持 ^二;4-透明 _12 12^ μ n β β之上，以及一發光疊層14位於透明黏結層 上。發先豐層14至少包含-第一半導體層142 ; 一活性 ^位於第—半導體層142之上；以及—第二半導體層146 導體之上；其中分別在第一半導體層142與第θ二半 古姓L 具有一第一極16與一第二電極18。接著從 絲第移^r1之一部分以形成二 脱為㈡=刻或雷射剝除法。第一下表面 之下，^if 成一反射層103於第一下表面脱 不接接觸。形成金屬基板105之方法可以為電錢。接 201114066 利用研磨或蚀刻移除金屬基板105的凸出部份(未顯示），再切 割形成如第4圖所示的發光元件1之晶粒，其中複合基板1〇 具有支持基板101、金屬基板105與反射層1〇3，反射層1〇3 則形成於支持基板101與金屬基板105之間。 支持基板101可為供發光疊層14成長用之成長基板，或 置換成長基板後利用透明黏結層12接合之基板，用以支撐位 於其上之發光疊層14，其材料可為透明或絕緣材料，例如為 電絕緣材料、藍寶石（Sapphire )、鑽石(Diamond)、玻璃(Glass)、 石英(Quartz)、壓克力(Acryl)、氧化鋅(ZnO)或氮化鋁(A1N)等。 支持基板101可以是透明的基板，可為導電或不導電，具有與 Φ 活性層144不互相平行之第一下表面1〇2，本實施例以一斜面 為例。反射層103可以反射活性層14所產生之光線，導向發 光元件之一側邊出光’以增加光摘出效率。除此之外，可依需 求設計第一下表面102，將光反射至其他側邊。反射層1〇3之 材料可為金屬或具有高反射率之材料，例如為銅(CU)、鋁(A1)、 銦(In)、錫(Sn)、金(Au)、鉑(Pt)、鋅(Zn)、銀(Ag)、鈦(Ti)、鉛 (Pb)、把(Pd)、鍺(Ge)、鎳(Ni)、鉻(Cr)、鎘(Cd)、钻(Co)、猛(Μη)、 銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(Τ1)、砷(As)、砸(Se)、碲(Te)、釙 (P〇)、銥(Ir)、銖(Re)、铑(Rh)、餓(〇s)、鎢(w)、鋰(Li)、鈉(Na)、 φ 鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、锶(Sr)、鋇(Ba)、鍅(Zr)、鉬 (Mo)、鑭(La)、銅-錫(Cu_Sn)、銅-鋅(Cu-Zn)、銅-鑛(Cu-Cd)、 錫-鉛-銻(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳·錫(Ni-Sn)、鎳· 鈷(Ni-Co)或金合金(Au alloy)。反射層1〇3也可包含一布拉格 反射層(DBR) ’材料例如為聚醯亞胺（p〇iyimide)、苯并環丁稀 (BCB)，過氟環丁烷（PFCB)、氧化銦錫(ITO)、氧化鎂 (MgO)、介電材料、Su8、環氧樹脂(Epoxy )、丙烯酸樹脂(Acrylic Resin)、環烯烴聚合物（COC)、聚甲基丙烯酸甲酯（PMMA)、 聚對苯二曱酸乙二酯（PET)、聚碳酸酯（PC)、聚醚醯亞胺 (Polyetherimide)、氟碳聚合物（FluorocarbonPolymer)、石夕膠 (Silicone)、玻璃(Glass)、氧化鋁(Al2〇3)、氧化矽(Si02)、氧 201114066 化鈦(Ti〇2)、氮化矽(SiNx)、旋塗玻璃(SOG)或其他有機材料。 金屬基板105可支撐支持基板ιοί與其上之發光疊層14，以 及幫助導熱，材料可為高散熱或反射材料，包含銅(Cu)、鋁 (A1)、銦(In)、錫(Sn)、金(Au)、麵(Pt)、鋅(Zn)、銀(Ag)、鈦 (Ti)、錯(Pb)、叙(Pd)、鍺(Ge)、錄(Ni)、鉻(Cr)、锡(Cd)、鈷(Co)、 猛(Μη)、銻(Sb)、鉍(Bi)、鎵(Ga)、鉈(T1)、砷(As)、砸(Se)、 碲(Te)、#(Po)、銥(Ir)、鍊(Re)、铑、鐵(〇s)、鎢、鋰 (Li)、鈉(Na)、鉀(K)、鈹(Be)、鎂(Mg)、鈣(Ca)、勰(Sr)、鋇(Ba)、 錯(Zr)、鉬(Mo)、鑭(La)、銅-錫(Cu-Sn)、銅-鋅(Cu-Zn)、銅-鎘(Cu-Cd)、錫-鉛-錄(Sn-Pb-Sb)、錫-鉛-鋅(Sn-Pb-Zn)、鎳-錫 φ (Ni-Sn)、鎳-勤(Ni-Co)、金合金(Au alloy)、銀化銦(inAg)、金 化銦(InAu)、鈹化金(AuBe)、鍺化金(AuGe)、鋅化金(AuZn)、 錫化鉛(PbSn)、銦化鈀(Pdln)或錫化金(AuSn)。 透明黏結層12可為導電或不導電，用以接合支持基板1〇1 與其上之發光疊層14，其材料可為透明材料或電絕緣材料， 包括聚醯亞胺（polyimide)、苯并環丁烯（BCB),過氟環丁烷 (PFCB )、乳化鎮(MgO)、介電材料、Su8、環氧樹脂（Epoxy )、 丙烯酸樹脂（Acrylic Resin)、環烯烴聚合物（c〇C)、聚甲基 丙稀酸甲酯（PMMA)、聚對苯二甲酸乙二酯（pet)、聚碳酸 春 酷（PC )、聚醚蕴亞胺（Polyetherimide )、氟碳聚合物 (Fluorocarbon Polymer)、矽膠（Silicone)、玻璃、氧化鋁 (Al2〇3)、氧化矽(Si〇2)、氧化鈦(Ti〇2)、氮化矽(沿队）、旋塗玻 璃(SOG)、其他有機黏結材料、氧化銦錫(IT〇)、氧化銦(In〇)、 氧化錫(SnO)、氧化鎘錫(CTO)、氧化銻錫(ΑΤΟ)、氧化鋅鋁 (ΑΖΟ)、氧化鋅錫(ΖΤΟ)、氧化鋅(ΖηΟ)、砷鎵化鋁(AlGaAs)、 氮化鎵(GaN)、磷化鎵(GaP)、砷化鎵(GaAs)或磷化鎵砷 (GaAsP)。發光豐層14之材料包含一種以上之物質選自嫁 (Ga)、鋁(A1)、銦(In)、磷(P)、氮(N)、鋅(zn)、鎘(cd)或硒(Se) 所構成之群組，第一半導體層142與第二半導體層146的電性 相異。 201114066 第二實施例如第5圖所示，與第一實施例類似，差里 支持基板101包含一第一下表面22和一第二下表面24，金^ 基板105形成於第一下表面22與第二下表面24之下。第二下 表面22和第二下表面24於上表面104相接，並分別與上表面 104夾有一第一夾角仏與一第二夾角02，第一夾角^或第二 夾角h之角度為20。〜70。，第一夾角化與第二夾角&之角I 可相同或不同。第三實施例如第6圖所示，與第二實施$ 似，差異在於-第-下表面32和一第二下表面34於金屬基板 105之底面相接。第一下表面32和第二下表面34分別與上表 面104夾第一夾角仏與第二夾角0”第一夾角0,或第;2夾角 • Θ2之角度為20。〜70。，第一夾角仏與第二夾角^之角度可相 同或不同。 第四實施例如第7圖所示，與第一實施例類似，差異在於 支持基板101包含一凹下表面42，通過凹下表面42之一側邊 之切線T1與上表面1〇4夾有一第一夾角0,，第一夾角&之角 度為20°〜70。。第五實施例如第§圖所示，與第四實施例類似， 差異在於支持基板101包含一凸下表面52，通過凸下表面52 之一側邊之切線T2與上表面1〇4夾有一第一夾角，第一夾 g 角A之角度為20°〜70。。 第9圖係繪示出一光源產生裝置示意圖，一光源產生裝置 6包含切割本發明任一實施例中之一晶圓發光結構所產生之晶 粒。光源產生裝置6可以是一照明裝置，例如路燈、車燈或室 内照明光源，也可以是交通號誌或一平面顯示器中背光模組的 一背光光源。光源產生裝置ό包含前述發光元件組成之一光源 ό卜一電源供應系統62以供應光源61 —電流、以及一控制元 件63，用以控制電源供應系統62。 第10圖係繪示出一背光模組剖面示意圖’一背光模組7 201114066 包含前述實施例中的光源產生裝置6，以及一光學元件71。光 學元件71可將由光源產生裝置6發出的光加以處理，以應用於 平面顯示器，例如散射光源產生裝置6發出的光。 惟上述實施例僅為例示性說明本發明之原理及其功效， 而非用於限制本發明。任何本發明所屬技術領域中具有通常知 識者均可林違背本發明之齡顧及精神⑽況下，對上述 實施例進行似及變化。g此本發明之侧倾制如後述之 申請專利範圍所列。[Embodiment] The embodiment of = (4) will be described in detail, and is drawn in the drawing, and the same or similar parts will appear in the respective figures and descriptions in the phase number. -, f is the diagram of the manufacturing process of the first embodiment. As shown in Fig. 1, on the package 2 holds ^2; 4-transparent _12 12^ μ n β β, and a light-emitting layer 14 is on the transparent adhesive layer. The first layer 14 includes at least a first semiconductor layer 142; an active layer over the first semiconductor layer 142; and a second semiconductor layer 146 over the conductor; wherein the first semiconductor layer 142 and the second half of the second semiconductor layer The ancient name L has a first pole 16 and a second electrode 18. Then, one part of ^r1 is moved from the wire to form a dip (2) = engraving or laser stripping method. Below the first lower surface, a reflective layer 103 is disengaged from the first lower surface. The method of forming the metal substrate 105 may be an electric money. Next, 201114066 removes a convex portion (not shown) of the metal substrate 105 by grinding or etching, and then cuts to form a crystal grain of the light-emitting element 1 as shown in FIG. 4, wherein the composite substrate 1 has a support substrate 101 and a metal substrate. 105 and the reflective layer 1〇3, and the reflective layer 1〇3 is formed between the support substrate 101 and the metal substrate 105. The support substrate 101 may be a growth substrate for the growth of the light-emitting laminate 14 or a substrate bonded by the transparent adhesive layer 12 after replacing the growth substrate, for supporting the light-emitting laminate 14 thereon, and the material may be transparent or insulating material. For example, it is an electrical insulating material, sapphire, diamond, glass, quartz, Acryl, zinc oxide (ZnO) or aluminum nitride (A1N). The support substrate 101 may be a transparent substrate, which may be electrically conductive or non-conductive, and has a first lower surface 1〇2 which is not parallel to the Φ active layer 144. This embodiment takes a slope as an example. The reflective layer 103 can reflect the light generated by the active layer 14 and direct light to the side of one of the light-emitting elements to increase the light extraction efficiency. In addition to this, the first lower surface 102 can be designed to reflect light to the other sides as desired. The material of the reflective layer 1〇3 may be metal or a material having high reflectivity, such as copper (CU), aluminum (A1), indium (In), tin (Sn), gold (Au), platinum (Pt), Zn, Zn, Ti, Pb, Pd, Ge, Ni, Ni, Cr猛 ()η), 锑 (Sb), 铋 (Bi), gallium (Ga), 铊 (Τ1), arsenic (As), 砸 (Se), 碲 (Te), 钋 (P〇), 铱 (Ir) , 铢 (Re), 铑 (Rh), hungry (〇 s), tungsten (w), lithium (Li), sodium (Na), φ potassium (K), bismuth (Be), magnesium (Mg), calcium ( Ca), strontium (Sr), barium (Ba), strontium (Zr), molybdenum (Mo), lanthanum (La), copper-tin (Cu_Sn), copper-zinc (Cu-Zn), copper-mine (Cu- Cd), tin-lead-bismuth (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel-tin (Ni-Sn), nickel-cobalt (Ni-Co) or gold alloy ( Au alloy). The reflective layer 1〇3 may also comprise a Bragg reflection layer (DBR) 'material such as polyfluorene (p〇iyimide), benzocyclobutylene (BCB), perfluorocyclobutane (PFCB), indium tin oxide (ITO), magnesium oxide (MgO), dielectric material, Su8, epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (COC), polymethyl methacrylate (PMMA), poly pair Ethylene benzoate (PET), polycarbonate (PC), polyetherimide, Fluorocarbon Polymer, Silicone, Glass, alumina Al2〇3), yttrium oxide (SiO2), oxygen 201114066 Titanium (Ti〇2), tantalum nitride (SiNx), spin-on glass (SOG) or other organic materials. The metal substrate 105 can support the support substrate ιοί and the light-emitting laminate 14 thereon, and help to conduct heat. The material can be a high heat dissipation or reflective material, including copper (Cu), aluminum (A1), indium (In), tin (Sn), Gold (Au), surface (Pt), zinc (Zn), silver (Ag), titanium (Ti), erbium (Pb), ruthenium (Pd), germanium (Ge), recorded (Ni), chromium (Cr), Tin (Cd), cobalt (Co), 猛 ()η), 锑 (Sb), bismuth (Bi), gallium (Ga), strontium (T1), arsenic (As), strontium (Se), strontium (Te), #(Po), 铱(Ir), chain (Re), 铑, iron (〇s), tungsten, lithium (Li), sodium (Na), potassium (K), bismuth (Be), magnesium (Mg), Calcium (Ca), strontium (Sr), barium (Ba), mal (Zr), molybdenum (Mo), lanthanum (La), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper- Cadmium (Cu-Cd), tin-lead-recorded (Sn-Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel-tin φ (Ni-Sn), nickel-diligent (Ni-Co ), Au alloy, indium, indium, gold, AuBe, AuZn, lead , indium palladium (Pdln) or tin gold (AuSn). The transparent bonding layer 12 may be electrically conductive or non-conductive to bond the supporting substrate 1〇1 with the light emitting laminate 14 thereon, and the material thereof may be a transparent material or an electrically insulating material, including a polyimide or a benzo ring. Butene (BCB), perfluorocyclobutane (PFCB), emulsified town (MgO), dielectric material, Su8, epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (c〇C) , polymethyl methacrylate (PMMA), polyethylene terephthalate (pet), polycarbonate (PC), polyetherimide, fluorocarbon polymer (Fluorocarbon Polymer) , Silicone (Silicone), glass, alumina (Al2〇3), yttrium oxide (Si〇2), titanium oxide (Ti〇2), tantalum nitride (along), spin-on glass (SOG), other organic bonding Materials, indium tin oxide (IT〇), indium oxide (In〇), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ΑΤΟ), zinc aluminum oxide (ΑΖΟ), zinc zinc oxide (ΖΤΟ) Zinc oxide, GaAs, AlGaAs, GaN, GaP, GaAs or GaAs. The material of the luminescent layer 14 comprises more than one substance selected from the group consisting of marry (Ga), aluminum (A1), indium (In), phosphorus (P), nitrogen (N), zinc (zn), cadmium (cd) or selenium ( The group of Se) is different in electrical conductivity between the first semiconductor layer 142 and the second semiconductor layer 146. 201114066 Second Embodiment As shown in FIG. 5, similar to the first embodiment, the differential support substrate 101 includes a first lower surface 22 and a second lower surface 24, and the gold substrate 105 is formed on the first lower surface 22 and Below the second lower surface 24. The second lower surface 22 and the second lower surface 24 are connected to the upper surface 104, and respectively have a first angle 仏 and a second angle 02 with the upper surface 104, and the angle between the first angle or the second angle h is 20 . ~70. The first angle of angulation may be the same as or different from the angle II of the second angle & The third embodiment, as shown in Fig. 6, is similar to the second embodiment except that the -first lower surface 32 and the second lower surface 34 are in contact with the bottom surface of the metal substrate 105. The first lower surface 32 and the second lower surface 34 respectively have a first angle 仏 with the upper surface 104 and a first angle 0 with the second angle 0′′, or an angle of the 2nd angle • Θ2 is 20. 70. The angle 仏 can be the same or different from the angle of the second angle. The fourth embodiment is shown in Fig. 7, similar to the first embodiment, except that the support substrate 101 includes a concave surface 42 through one of the concave surfaces 42. The tangent line T1 of the side has a first angle 0 with the upper surface 1〇4, and the angle of the first angle & is 20°~70. The fifth embodiment is similar to the fourth embodiment, as shown in the figure §, The difference is that the support substrate 101 includes a convex lower surface 52, and a first angle is formed by the tangent line T2 of one side of the convex lower surface 52 with the upper surface 1〇4, and the angle of the first clip g angle A is 20° to 70°. 9 is a schematic diagram showing a light source generating device, and a light source generating device 6 includes a die formed by cutting a light emitting structure of a wafer according to any embodiment of the present invention. The light source generating device 6 may be a lighting device. For example, street lights, lights or indoor lighting sources, or traffic signs or a flat A backlight source of the backlight module in the surface display. The light source generating device comprises a light source comprising a light source, a power supply system 62 for supplying a light source 61 - a current, and a control element 63 for controlling the power supply system 62. Figure 10 is a cross-sectional view showing a backlight module. A backlight module 7 201114066 includes the light source generating device 6 of the foregoing embodiment, and an optical element 71. The optical element 71 can emit light from the light source generating device 6. The invention is applied to a flat panel display, such as the light emitted by the scattered light source generating device 6. The above embodiments are merely illustrative of the principles of the present invention and its effects, and are not intended to limit the present invention. The above embodiments are susceptible to variations in the case of a person having ordinary knowledge in the light of the spirit of the invention (10). The present invention is also disclosed in the scope of the patent application.
L圖式簡單說明】 圖式用以促進對本發明之理解系 圖式之實_配合實财仏細。 第i·4圖係依據本發明之第一實施例之製造流程示意圖。 第5圖係依據本發明之第二實施例之剖面圖。 第6圖係依據本發明之第三實施例之剖面圖。A simple description of the L schema] The schema is used to promote the understanding of the present invention. Figure i4 is a schematic diagram of a manufacturing process in accordance with a first embodiment of the present invention. Figure 5 is a cross-sectional view showing a second embodiment of the present invention. Figure 6 is a cross-sectional view showing a third embodiment of the present invention.
第7圖係依據本發明之第四實施例之剖面圖。 第8圖餘據本發私紅魏例之剖面圖。 第9圖係為示意圖，顯示 之一光難絲置。 U實㈣所、、且成 第10圖係為示意圖，@ 之-背光模組之示意圖。和仙本發明實施例所組成 201114066 【主要元件符號說明】 10:複合基板 101:支持基板 102 22 32:第一下表面 24 34:第二下表面 42:凹下表面 52:凸下表面 103:反射層 104:上表面 籲 θι:第一夾角 Θ 2:第二夾角 105:金屬基板 12:透明黏結層 14:發光疊層 142:第一半導體層 144:活性層 146:第二半導體層 籲 16:第一電極 18:第二電極 6:光源產生裝置 61:光源 62:電源供應糸統 63:控制元件 7:背光模組 71:光學元件Figure 7 is a cross-sectional view showing a fourth embodiment of the present invention. Figure 8 is a cross-sectional view of the private version of the red. Figure 9 is a schematic diagram showing one of the difficult to place wires. U (4), and 10 is a schematic diagram of the @--backlight module. And the composition of the invention embodiment 201114066 [Description of main component symbols] 10: composite substrate 101: support substrate 102 22 32: first lower surface 24 34: second lower surface 42: concave surface 52: convex lower surface 103: The reflective layer 104: the upper surface θι: the first angle Θ 2: the second angle 105: the metal substrate 12: the transparent adhesive layer 14: the light-emitting layer 142: the first semiconductor layer 144: the active layer 146: the second semiconductor layer : First electrode 18: Second electrode 6: Light source generating device 61: Light source 62: Power supply system 63: Control element 7: Backlight module 71: Optical element