KR20140059444A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- KR20140059444A KR20140059444A KR1020120125920A KR20120125920A KR20140059444A KR 20140059444 A KR20140059444 A KR 20140059444A KR 1020120125920 A KR1020120125920 A KR 1020120125920A KR 20120125920 A KR20120125920 A KR 20120125920A KR 20140059444 A KR20140059444 A KR 20140059444A
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- KR
- South Korea
- Prior art keywords
- layer
- gallium nitride
- light emitting
- emitting device
- light
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Abstract
Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
The light emitting device according to the embodiment includes a first conductive semiconductor layer 112; A gallium nitride-based superlattice layer 124 on the first conductive semiconductor layer 112; An active layer 114 on the gallium nitride superlattice layer 124; And a second conductive semiconductor layer 116 on the active layer 114. The gallium nitride superlattice layer 124 may include an undoped layer on the first conductive semiconductor layer 112, ) Gallium nitride superlattice layer 124u and a doped gallium nitride superlattice layer 124d on the undoped gallium nitride superlattice layer 124u.
Description
Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
Light Emitting Device is a pn junction diode whose electrical energy is converted into light energy. It can be produced from compound semiconductor such as group III and group V on the periodic table and by controlling the composition ratio of compound semiconductor, It is possible.
When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, becomes a light emitting element.
For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.
The epitaxial structure used in the light emitting device includes an electron injection layer, an active layer, and a hole injection layer, and the active layer is a multiple quantum well structure (MQWs), which is usually composed of a heterojunction of a III-V semiconductor that is not doped.
The light emitting device requires doping in order to make the p-n junction structure, but when the doping region is widened, the film quality of the whole semiconductor is deteriorated and the characteristics of the light emitting device are adversely affected.
Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system capable of providing a highly efficient light emitting device.
The light emitting device according to the embodiment includes a first
According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the illumination system according to the embodiments, the thickness ratio of the undoped region and the doped region is appropriately adjusted for the gallium nitride superlattice layer, thereby improving the overall thin film quality A high-efficiency light emitting device can be provided.
1 is a cross-sectional view of a light emitting device according to an embodiment.
2 is a diagram illustrating a secondary-ion mass spectroscopy (SIMS) analysis of a light-emitting device according to an embodiment.
3 is an energy band diagram portion example of a light emitting device according to an embodiment.
4 is a cross-sectional view of a light emitting device package according to an embodiment.
5 to 7 are views showing a lighting apparatus according to an embodiment.
8 and 9 are views showing another example of the lighting apparatus according to the embodiment.
10 is a perspective view of a backlight unit according to an embodiment.
In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
(Example)
1 is a cross-sectional view of a
The
The first
FIG. 2 is a view illustrating a secondary-ion mass spectroscopy (SIMS) analysis of a light emitting device according to an embodiment. FIG. 3 is a diagram illustrating an energy band diagram of a light emitting device according to an embodiment.
Hereinafter, a light emitting device according to an embodiment will be described with reference to FIGS. 1 to 3. FIG.
FIG. 1 illustrates a horizontal light emitting device in which a
In the light emitting device according to the embodiment, the
The embodiment also includes a
For example, the material of the
In an exemplary embodiment, the first
For example, the first
The
The
In addition, the embodiment can efficiently inject electrons by forming the
For example, the
In addition, in the embodiment, a gallium nitride
The gallium
According to the light emitting device and the method of manufacturing the same according to the embodiments, it is possible to improve the overall thin film quality and to provide a high-efficiency light emitting device by appropriately adjusting the thickness ratio of the undoped region and the doped region with respect to the gallium nitride superlattice layer have.
That is, in order to form a pn junction structure in the light emitting device, the doping of the p-type element and the n-type element is required, and in order to form a carrier of high concentration in the intrinsic semiconductor, the degree of doping must be increased. And the strain of the light emitting device is changed, thereby adversely affecting the characteristics of the light emitting device.
Accordingly, in order to improve the light intensity through charge balance matching of the LED device, the concentration of the first conductive type element, for example Si, immediately before the growth of the multiple quantum well is important, The gallium-based
Accordingly, in the embodiment, the gallium
In the embodiment, the doped gallium nitride-based
On the other hand, in the embodiment, the concentration of the first conductive type element in the undoped gallium
The carrier injection efficiency is improved by increasing the carrier concentration in the region adjacent to the active layer in order to minimize the inverse effect of the doping while paying attention to the main role of the carrier injection layer according to the embodiment and to improve the doping efficiency of the doped gallium nitride
For example, the thickness of the doped gallium
For example, if the thickness of the doped gallium
On the other hand, when the thickness of the doped gallium
For example, in an embodiment, the thickness of the doped gallium nitride based
Table 1 is a table of device characteristics at a specific wavelength (WD: dominant wavelength) of the light emitting device according to the embodiment and the prior art reference. As a result, the operation voltage VF3 is improved as the luminous intensity is maintained or improved as compared with the prior art.
Next, the
In an embodiment, the
For example, the
The well layer 114a and the
Next, in the embodiment, the
In addition, the
The
Thereafter, a second
For example, the second
In an embodiment, the first
Next, in the embodiment, the light-transmitting
For example, the
The second conductivity
According to the light emitting device and the method of manufacturing the same according to the embodiments, it is possible to improve the overall thin film quality and to provide a high-efficiency light emitting device by appropriately adjusting the thickness ratio of the undoped region and the doped region with respect to the gallium nitride superlattice layer have.
4 is a view illustrating a light emitting
The light emitting
The
The
The
The
The
The
A light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.
5 to 7 are views showing a lighting apparatus according to an embodiment.
FIG. 5 is a perspective view of the illumination device according to the embodiment viewed from above, FIG. 6 is a perspective view of the illumination device shown in FIG. 5, and FIG. 7 is an exploded perspective view of the illumination device shown in FIG.
5 to 7, the lighting apparatus according to the embodiment includes a
For example, the
The inner surface of the
The
The
The
The surface of the
The
The
The
The
The
The
The
8 and 9 are views showing another example of the lighting apparatus according to the embodiment.
Fig. 8 is a perspective view of a lighting apparatus according to an embodiment, and Fig. 9 is an exploded perspective view of the lighting apparatus shown in Fig.
8 and 9, the illumination device according to the embodiment includes a
The
The
The
The inner surface of the
The
The
In Figure 9, the
The
In addition, the
The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .
The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.
The
A plurality of radiating
The
Specifically, the
The
The
The material of the
The
The
The plurality of
The
The
The
10 is an exploded
The
The
The light emitting
The
The
The plurality of light emitting device packages 200 may be mounted on the
The
The
The
According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the illumination system according to the embodiments, the thickness ratio of the undoped region and the doped region is appropriately adjusted for the gallium nitride superlattice layer, thereby improving the overall thin film quality A high-efficiency light emitting device can be provided.
The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.
The first
A gallium
An undoped gallium
Doped gallium nitride-based
The
Claims (11)
A gallium nitride superlattice layer on the first conductive type semiconductor layer;
An active layer on the gallium nitride superlattice layer; And
And a second conductive semiconductor layer on the active layer,
The gallium nitride-based superlattice layer may be formed,
An undoped gallium nitride superlattice layer on the first conductivity type semiconductor layer and a gallium nitride superlattice layer doped on the undoped gallium nitride superlattice layer.
The undoped gallium nitride superlattice layer
Wherein a concentration of the first conductive type element is 5 x 10 17 (atoms / cm 3 ) or less.
The doped gallium nitride superlattice layer
Wherein a concentration of the first conductive type element is 1 x 10 18 (atoms / cm 3 ) or more to 1 x 10 19 (atoms / cm 3 ).
The doped gallium nitride superlattice layer
And the active layer is closer to the active layer than the undoped gallium nitride-based superlattice layer.
And the thickness of the doped gallium nitride superlattice layer is thinner than that of the undoped gallium nitride superlattice layer.
The thickness of the doped gallium nitride superlattice layer is
And the thickness of the undoped gallium nitride superlattice layer is 10% to 30% of the thickness of the undoped gallium nitride superlattice layer.
The thickness of the doped gallium nitride superlattice layer is
50nm to 200nm.
Further comprising a current diffusion layer between the first conductivity type semiconductor layer and the gallium nitride superlattice layer,
Wherein the current diffusion layer comprises an undoped GaN layer.
The current diffusion layer
And a thickness of 50 nm to 200 nm.
And an electron injection layer between the current diffusion layer and the gallium nitride superlattice layer.
The electron injection layer
wherein the n-type doping element is doped at a concentration of 6.0 x 10 18 atoms / cm 3 to 8.0 x 10 18 atoms / cm 3 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120125920A KR20140059444A (en) | 2012-11-08 | 2012-11-08 | Light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120125920A KR20140059444A (en) | 2012-11-08 | 2012-11-08 | Light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140059444A true KR20140059444A (en) | 2014-05-16 |
Family
ID=50889254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020120125920A KR20140059444A (en) | 2012-11-08 | 2012-11-08 | Light emitting device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20140059444A (en) |
-
2012
- 2012-11-08 KR KR1020120125920A patent/KR20140059444A/en not_active Application Discontinuation
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