KR101997253B1 - Light emitting device and lighting system having the same - Google Patents

Abstract

The light emitting device of the present invention includes a substrate, a mask layer formed on the substrate at a predetermined interval, a first conductive semiconductor layer formed on the mask layer, an active layer formed on the first conductive semiconductor layer, A second conductivity type semiconductor layer formed on the active layer, and a hole diffusion preventing layer formed in the second conductivity type semiconductor layer.
According to the present invention, the mask layer and the hole diffusion preventing layer are formed so as not to overlap with the mask layer, thereby effectively blocking the coupling between the TD potential and the hole propagating in the growth direction.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device,

The present invention relates to a light emitting device, and more particularly, to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system for improving light emitting characteristics.

Light Emitting Device is a compound semiconductor whose electrical energy is converted into light energy. It can be produced from compound semiconductors such as Group III and Group V on the periodic table and can be implemented in various colors by controlling the composition ratio of compound semiconductors. Do.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. For example, nitride semiconductors are widely used in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. I am receiving great attention. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

A conventional nitride semiconductor light emitting device uses a two-step growth method using a buffer layer of GaN or AlN grown at a low temperature.

However, according to the related art, potentials such as TD (threading dislocation) propagate in the growth direction, and the TD potential can be lowered by coupling with holes. In addition, the TD potential has an adverse effect on the ESD characteristics, adversely affecting various characteristics of the light emitting device such as low leakage current due to the leaky source.

In order to solve the above-mentioned problems, it is an object of the present invention to provide a light emitting device and a lighting system including the same that prevent a decrease in light intensity and a low current characteristic due to the TD potential.

According to an aspect of the present invention, there is provided a light emitting device including a substrate, a mask layer spaced apart from the substrate, a first conductive semiconductor layer formed on the mask layer, A second conductivity type semiconductor layer formed on the active layer, and a hole diffusion preventing layer formed in the second conductivity type semiconductor layer.

The present invention has the effect of effectively blocking the TD potential and improving the characteristics of the light emitting device by forming the mask layer on the substrate.

In addition, the present invention has the effect of preventing the TD potential from being combined with the hole by further forming the hole diffusion preventing layer so as not to overlap with the mask layer.

1 is a sectional view showing a light emitting device according to the present invention,
Fig. 2 is an enlarged sectional view showing a part of Fig. 1,
Figs. 3 to 5 are a cross-sectional view and a perspective view showing a modification of Fig. 1,
6 to 13 are cross-sectional views illustrating a detailed manufacturing method of a light emitting device according to the present invention,
14 is a sectional view of a light emitting device package according to the present invention, and Fig.
15 to 17 are exploded perspective views showing embodiments of an illumination system provided with a light emitting device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is an enlarged cross-sectional view showing a part of FIG. 1, FIGS. 3 to 5 are a cross-sectional view and a perspective view showing a modification of FIG. 1, and FIGS. 13 is a cross-sectional view illustrating a detailed manufacturing method of the light emitting device according to the present invention.

1 and 2, a light emitting device 100 according to the present invention includes a substrate 110, a buffer layer 191 formed on the substrate 110, A first conductive semiconductor layer 130 formed on the mask layer 120 and a second conductive semiconductor layer 130 formed on the first conductive semiconductor layer 130 to expose an upper portion of the first conductive semiconductor layer 130. [ An active layer 140 formed on the strain control layer 195 and a current spreading layer 193 and a strain control layer 195 sequentially formed on the active layer 140 and an electron blocking layer A second conductivity type semiconductor layer 150 formed on the electron blocking layer 197, a hole diffusion preventing layer 160 formed in the second conductivity type semiconductor layer, A first electrode 180 formed on the first conductive semiconductor layer 130 and a second electrode 180 formed on the ohmic layer 199, It generated a second electrode (170).

The substrate 110 may be formed of a material having excellent thermal conductivity, or may be a conductive substrate or an insulating substrate. For example, the substrate 110 is a sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ 0 ₃ May be used. The concavo-convex structure may be formed on the substrate 110, but the present invention is not limited thereto.

A buffer layer 191 may be formed on the substrate 110.

The buffer layer 191 serves to relieve the lattice mismatch between the material of the light emitting structure and the substrate 110. The buffer layer 191 may include a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN , InAlGaN, and AlInN. Alternatively, the buffer layer 191 may be an undoped gallium nitride layer.

The buffer layer 191 may be formed of one or more layers, and the buffer layer 191 formed by stacking a plurality of layers may be formed of different materials. For example, when the first buffer layer 191 is formed of two buffer layers 191, the first buffer layer may be an undoped gallium nitride layer, and the second buffer layer may be formed of Al _x Ga _(1-x) N Layer.

The second buffer layer Al _x Ga _(1-x) N (0 _{? X?} 1) / GaN superlattice layer effectively blocks dislocations due to lattice mismatch between the material of the light emitting structure and the substrate 110 .

A mask layer 120 may be formed on the buffer layer 191.

The mask layer 120 may be formed on the buffer layer 191 so as to be spaced apart from each other, thereby blocking the TD potential. The mask layer 120 may be formed of an insulating material including SiO ₂ , SiN, and the like. The mask layer 120 may have a polygonal shape including a triangle, a square, a circular shape, or a polygonal shape or a line shape It is possible. The thickness of the mask layer 120 may be 1 占 퐉 to 30 占 퐉.

Although the mask layer 120 is formed on the buffer layer 191, the mask layer 120 may be formed on the substrate 110 without being limited thereto.

The first conductive semiconductor layer 130 may be formed on the mask layer 120.

The first conductive semiconductor layer 130 may be formed to cover a plurality of mask layers 120 spaced apart from each other. The first conductive semiconductor layer 130 may be formed of a compound semiconductor such as a Group 3-Group-5, Group-6, or Group-6 semiconductor, and may be doped with a first conductive-type dopant. When the first conductive semiconductor layer 130 is an N-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, and Te as an N-type dopant.

Alternatively, the first conductive semiconductor layer 130 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) Semiconductor material. The first conductive semiconductor layer 130 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

The thickness t1 of the first conductivity type semiconductor layer 130 may be twice the thickness t2 of the mask layer 120. For example, the thickness t2 of the mask layer 120 May be formed to a half of the thickness t1 of the first conductivity type semiconductor layer 130. [

A current diffusion layer 193 may be formed on the first conductive semiconductor layer 130.

The current diffusion layer 193 may increase the light efficiency by improving the internal quantum efficiency and may be an undoped GaN layer.

Further, an electron injection layer (not shown) may be further formed on the current diffusion layer 193. The electron injection layer may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element ^{6.0x10 18 atoms / cm 3 ~ 3.0x10} 19 atoms / cm 3.

A strain control layer 195 may be formed on the electron injection layer.

The strain control layer 195 effectively relaxes the stress caused by the lattice mismatch between the first conductive semiconductor layer 130 and the active layer 140. The strain control layer 195 may be formed in a multi-layer structure. For example, the strain control layer 195 may include Al _x In _y Ga _1-xy N and GaN in a plurality of pairs can do.

The lattice constant of the strain control layer 195 may be greater than the lattice constant of the first conductive semiconductor layer 130 but less than the lattice constant of the active layer 140. Accordingly, the stress due to the difference in lattice constant between the active layer 140 and the first conductivity type semiconductor layer 130 can be minimized.

The active layer 140 may be formed on the strain control layer 195.

Electrons injected through the first conductive type semiconductor layer 130 and holes injected through the second conductive type semiconductor layer 150 formed after the first and second conductive type semiconductor layers 150 and 150 form an active layer 140, Which emits light having an energy determined by < RTI ID = 0.0 >

The active layer 140 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 140 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

An electron blocking layer 197 may be formed on the active layer 140.

The electron blocking layer 197 functions as an electron blocking layer and a cladding layer of the active layer (MQW cladding), thereby improving the luminous efficiency. The electron blocking layer 197 may be formed of an Al _x In _y Ga _(1-xy) N (0? _{X ? 1, 0? Y ? 1} ) semiconductor and is higher than the energy band gap of the active layer 140 An energy bandgap, and may be formed to a thickness of about 100 A to about 600 A, but the present invention is not limited thereto. Alternatively, the electron blocking layer 197 may be formed of a superlattice of Al _z Ga _(1-z) N / GaN (0? _Z ? 1).

The second conductive semiconductor layer 150 may be formed on the electron blocking layer 197.

The second conductive semiconductor layer 150 may be formed of a semiconductor compound. 3-group-5, group-2-group-6, and the like, and the second conductivity type dopant may be doped.

For example, the second conductivity type semiconductor layer 150 may be a semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + ≪ / RTI > When the second conductive semiconductor layer 150 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, and Ba as a P-type dopant.

The hole diffusion preventing layer 160 may be formed in the second conductive semiconductor layer 150.

The hole diffusion preventing layer 160 prevents holes from diffusing to prevent coupling of the TD potential and holes which are propagated to the mask layers 120 formed separately from each other, Germanium (Ge) material.

That is, when silicon or germanium is used to form the hole diffusion preventing layer 160, the resistance in the region where the TD potential is high becomes high, and the coupling of the TD potential and the hole can be effectively prevented. In addition, the hole diffusion preventing layer 160 can be formed on the second conductive semiconductor layer 150 having a relatively high resistance, and thus the hole diffusion can be more effectively prevented.

The hole diffusion preventing layer 160 may be divided into a plurality of holes in the second conductivity type semiconductor layer 150 and spaced apart from the hole diffusion preventing layer 160. The hole diffusion preventing layer 160 may be formed so as not to overlap the mask layer 120 . That is, the hole diffusion preventing layer 160 may be formed to correspond to the space between the mask layers 120.

The hole diffusion preventing layer 160 may be formed in the second conductive semiconductor layer 150 by ion implantation so that the hole diffusion preventing layer 160 is formed on the upper surface and the lower surface of the second conductive semiconductor layer 150, As shown in FIG.

2, the lateral width w of the hole diffusion preventing layer 160 may be formed to correspond to the distance d between the mask layers 120. [ When the lateral width w of the hole diffusion preventing layer 160 is larger than the distance d between the mask layers 120, the TD potential can be blocked more effectively, but the operation voltage is increased. This can cause a failure of the light emitting element.

Alternatively, the lateral width w of the hole diffusion preventing layer 160 may be formed to be smaller than the distance d between the mask layers 120.

3, the lateral width w of the hole diffusion preventing layer 160 may be smaller than the distance d between the mask layers 120. In addition, the hole diffusion preventing layer 160 and the mask The left and right distances of the layer 120 may be formed identically.

The width H of the hole diffusion preventing layer 160 is set such that the right and left width W of the hole diffusion preventing layer 160 becomes smaller than the distance d between the mask layers 120. [ The resistance decreases and the coupling of the holes and the TD potential can not be effectively blocked as compared with the case where the distance d between the layers 120 is the same. On the contrary, the operation voltage can be lowered to improve the operation efficiency.

However, it is preferable to improve the operation efficiency while adjusting the range of the hole diffusion preventing layer 160 because the combination of the hole and the TD potential is sufficiently blocked by sufficiently increasing the resistance even by forming the hole diffusion preventing layer 160.

The hole diffusion preventing layer 160 may be formed to correspond to the thickness t2 of the mask layer 120. Alternatively, the thickness of the hole diffusion preventing layer 160 may be set to correspond to the thickness t2 of the mask layer 120, It may be formed to be 1/2 of the thickness.

Although the hole diffusion preventing layer 160 is formed between the upper surface and the lower surface of the second conductive semiconductor layer 150 in the above description, the hole diffusion preventing layer 160 may be formed as shown in FIGS.

4, the hole diffusion preventing layer 160 is formed in the second conductive semiconductor layer 150. More specifically, the lower surface of the hole diffusion preventing layer 160 is formed in the second conductive semiconductor layer 150, As shown in FIG.

The width H of the hole diffusion preventing layer 160 may correspond to the distance d between the mask layers 120 and the thickness of the hole diffusion preventing layer 160 may be equal to the thickness t2 of the mask layer 120 Or a half of the thickness of the second conductive type semiconductor layer 150.

The second conductivity type semiconductor layer 150 may be formed by depositing after the hole diffusion preventing layer 160 is formed on the current blocking layer 197.

5, the hole diffusion preventing layer 160 is formed in the second conductive type semiconductor layer 150, and more specifically, the upper surface of the hole diffusion preventing layer 160 is formed in the second conductive type semiconductor layer 150. In addition, May be formed on the same line as the upper surface of the substrate 150. The lateral width w and the thickness of the hole diffusion preventing layer 160 may correspond to the conditions described in Figs. 1 and 4.

As described above, the hole diffusion preventing layer 160 can more effectively prevent the TD potential propagated in the growth direction from propagating through the mask layer 120 to combine with the holes, thereby improving the operation characteristics of the light emitting device.

Although the hole diffusion barrier layer 160 is formed on the second conductivity type semiconductor layer 150 in the above description, the hole diffusion barrier layer 160 may be formed on the upper layer of the active layer 140.

Referring back to FIG. 1, an ohmic layer 199 may be formed on the second conductive semiconductor layer 150.

The ohmic layer 199 may be formed by stacking a single metal, a metal alloy, a metal oxide, or the like in multiple layers so as to efficiently perform carrier injection. For example, the ohmic layer 199 may be formed of a material having excellent electrical contact with the semiconductor. The ohmic layer 199 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide IZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON NiO, IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, RuOx / NiO, RuOx / ITO, And may include at least one of Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf.

The second electrode 170 is formed on the ohmic layer 199 and the first electrode 180 is formed on the first conductive semiconductor layer 130 having the upper part exposed. .

Hereinafter, a manufacturing process of the light emitting device according to the present invention will be described with reference to FIGS. 6 to 13. FIG.

As shown in FIG. 6, when the substrate 110 is provided, a step of forming a buffer layer 191 on one surface of the substrate 110 is performed.

The buffer layer 191 may be formed by depositing GaN on the substrate 110 to a predetermined thickness by sputtering. As the buffer layer 191, AIN and ZnO may be used in addition to GaN.

7, when the buffer layer 191 is formed on the substrate 110, a step of forming the mask layer 120 on the buffer layer 191 is performed.

The mask layer 120 may be formed by depositing SiO ₂ on the buffer layer 191 and may control the size of a predetermined pattern using a photoresistor or pore wideing.

8, when the mask layer 130 is formed on the buffer layer 191, a step of forming the first conductive semiconductor layer 130 on the mask layer 120 is performed.

The first conductive semiconductor layer 130 may be formed to cover the mask layer 120 and may be formed by depositing a Group 3-5 or Group 2-6 compound. The first conductive semiconductor layer 130 may be formed by a CVD method, a molecular beam epitaxy (MBE) method, a sputtering method, or a vapor phase epitaxy (HVPE) method.

In addition, the first conductive semiconductor layer 130 may be formed by depositing a silane containing an n-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ) Gas (SiH ₄ ) may be implanted and formed.

9, when the first conductivity type semiconductor layer 130 is formed on the mask layer 120, the current diffusion layer 193, the strain control layer 195, , And an active layer 140 are sequentially formed.

The current diffusion layer 193 and the strain control layer 195 may be deposited to a predetermined thickness by MOCVD and an electron injection layer (not shown) may be further formed between the current diffusion layer 193 and the strain control layer 195 .

The active layer 140 is selectively supplied to a source of H ₂ and / or TMGa (or TEGa), TNin, and TMAI at a predetermined growth temperature, for example, in a range of 700 to 900 degrees to form a well layer made of GaN or InGaN, , A barrier layer made of AlGaN, InGaN or InAlGaN can be formed.

10, when the current diffusion layer 193, the strain control layer 195, and the active layer 140 are sequentially stacked on the first conductive semiconductor layer 130, The blocking layer 197 and the second conductive semiconductor layer 150 are formed.

The electron blocking layer 197 may be formed by ion implantation into the second conductive semiconductor layer 150. For example, the electron blocking layer 197 may be formed of AlxInyGa (1-x-y) having an Al composition ranging from 1 to 30%.

The second conductivity type semiconductor layer 150 is formed by injecting biscyclopentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ } on the electron blocking layer 197 Accordingly, the second conductive semiconductor layer 150 may be formed of a p-type GaN layer.

11, when the electron blocking layer 197 and the second conductivity type semiconductor layer 150 are formed on the active layer 140, the hole diffusion preventing layer 160 is formed in the second conductivity type semiconductor layer 150, May be performed.

The hole diffusion preventing layer 160 may be formed in the second conductivity type semiconductor layer 150 and may be formed by implanting Si or Ge into the second conductivity type semiconductor layer 150. The hole diffusion preventing layer 160 may be disposed between the upper surface and the lower surface of the second conductive semiconductor layer 150. The hole diffusion preventing layer 160 may be formed in a multiple, circular, or line-shaped cross section.

The hole diffusion preventing layer 160 may be formed on the entire upper portion of the active layer 140, for example, the entire upper and lower portions of the second conductive type semiconductor layer 150 and the region including the electron blocking layer 197.

12, when the hole diffusion preventing layer 160 is formed in the second conductivity type semiconductor layer 150, a step of forming the ohmic layer 199 on the second conductivity type semiconductor layer 150 is performed do.

The ohmic layer 199 can be formed by depositing ITO. When the ohmic layer 199 is formed on the second conductive semiconductor layer 150, the mesa etching process may be performed such that a part of the first conductive semiconductor layer 130 is exposed. For example, the ohmic layer 199, the second conductivity type semiconductor layer 150 in which the hole diffusion prevention layer 160 is formed, the electron blocking layer 197, the active layer 140, the strain control layer 195, 193 may be partially removed to expose a portion of the upper portion of the first conductivity type semiconductor layer 130.

13, when the upper part of the first conductive semiconductor layer 130 is exposed, the first electrode 180 is formed on the first conductive semiconductor layer 130, the ohmic layer 199 is formed, The second electrode 170 may be formed on the second electrode 170 to complete the manufacturing process of the light emitting device according to the present invention.

14 is a cross-sectional view of a light emitting device package according to the present invention. The light emitting device package according to the present invention may be mounted with the light emitting device having the structure as described above.

The light emitting device package 200 includes a package body portion 205, a third electrode layer 213 and a fourth electrode layer 214 disposed on the package body portion 205, A light emitting device 100 arranged to be electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100 are included.

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be disposed on the package body 205 or may be disposed on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. The light emitting device 100 is electrically connected to the third electrode layer 213 and the fourth electrode layer 214 through wires. However, the present invention is not limited thereto.

The molding member 230 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100.

15 to 17 are exploded perspective views showing embodiments of an illumination system equipped with a light emitting device according to the present invention.

15, the lighting apparatus according to the present invention includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, a socket 2800, . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include the light emitting device 100 or the light emitting device package 200 according to the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

16, the lighting apparatus according to the present invention includes a cover 3100, a light source unit 3200, a heat sink 3300, a circuit unit 3400, an inner case 3500, and a socket 3600 can do. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source unit 3200 and the member 3350 can be inserted through the opening 3110. [

The cover 3100 may be coupled to the heat discharging body 3300 and surround the light source unit 3200 and the member 3350. The light source part 3200 and the member 3350 may be shielded from the outside by the combination of the cover 3100 and the heat discharging body 3300. The coupling between the cover 3100 and the heat discharging body 3300 may be combined through an adhesive, or may be combined by various methods such as a rotational coupling method and a hook coupling method. The rotation coupling method is a method in which a screw thread of the cover 3100 is engaged with a thread groove of the heat dissipating body 3300 so that the cover 3100 is coupled to the heat dissipating body 3300 by rotation of the cover 3100 In the hook coupling method, the protrusion of the cover 3100 is inserted into the groove of the heat discharging body 3300, and the cover 3100 and the heat discharging body 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200. Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor inside / outside or in the inside thereof to excite light from the light source part 3200.

The inner surface of the cover 3100 may be coated with a milky white paint. Here, the milky white paint may include a diffusing agent for diffusing light. The surface roughness of the inner surface of the cover 3100 may be larger than the surface roughness of the outer surface of the cover 3100. This is for sufficiently scattering and diffusing light from the light source part 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 3100 may be a transparent material that can be seen from the outside of the light source unit 3200 and the member 3350, and may be an invisible and opaque material. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 is disposed on the member 3350 of the heat sink 3300 and may be disposed in a plurality of units. Specifically, the light source portion 3200 may be disposed on at least one of the plurality of side surfaces of the member 3350. The light source unit 3200 may be disposed at the upper end of the member 3350.

The light source portion 3200 may be disposed on three of the six sides of the member 3350. However, the present invention is not limited thereto, and the light source portion 3200 may be disposed on all the sides of the member 3350. The light source unit 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one side of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a printed circuit pattern on an insulator. For example, the substrate 3210 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI > In addition, a COB (Chips On Board) type that can directly bond an unpackaged LED chip on a printed circuit board can be used. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface efficiently reflects light, for example, white, silver, or the like. The substrate 3210 may be electrically connected to the circuit unit 3400 housed in the heat discharging body 3300. The substrate 3210 and the circuit portion 3400 may be connected, for example, via a wire. The wire may pass through the heat discharging body 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .

The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.

The heat discharging body 3300 may be coupled to the cover 3100 to dissipate heat from the light source unit 3200. The heat discharging body 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. An upper surface 3310 of the heat discharging body 3300 can be engaged with the cover 3100. The upper surface 3310 of the heat discharging body 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of radiating fins 3370 may be disposed on the side surface 3330 of the heat discharging body 3300. The radiating fin 3370 may extend outward from the side surface 3330 of the heat discharging body 3300 or may be connected to the side surface 3330. The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipator 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the radiating fin 3370.

The member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. The member 3350 may be integral with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal column. Specifically, the member 3350 may be a hexagonal column. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides. Here, the member 3350 may be a circular column or an elliptic column as well as a polygonal column. When the member 3350 is a circular column or an elliptic column, the substrate 3210 of the light source portion 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six sides of the member 3350. The light source unit 3200 may be disposed on all six sides and the light source unit 3200 may be disposed on some of the six sides. In FIG. 16, the light source unit 3200 is disposed on three sides of six sides.

The substrate 3210 is disposed on a side surface of the member 3350. The side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat discharging body 3300. Accordingly, the upper surface 3310 of the substrate 3210 and the heat discharging body 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to receive the heat generated from the light source 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn) Or the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are advantageous in that they are lighter in weight than metals and have unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the supplied power to the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat discharging body 3300. Specifically, the circuit unit 3400 may be housed in the inner case 3500 and stored in the heat discharging body 3300 together with the inner case 3500. The circuit portion 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may be in the shape of an oval or polygonal plate. Such a circuit board 3410 may be one in which a circuit pattern is printed on an insulator.

The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected by wire, for example. The wires may be disposed inside the heat discharging body 3300 to connect the circuit board 3410 and the substrate 3210.

The plurality of components 3430 include, for example, a DC converter for converting AC power supplied from an external power source to DC power, a driving chip for controlling the driving of the light source 3200, An electrostatic discharge (ESD) protection device, and the like.

The inner case 3500 houses the circuit portion 3400 therein. The inner case 3500 may have a receiving portion 3510 for receiving the circuit portion 3400.

The receiving portion 3510 may have a cylindrical shape as an example. The shape of the accommodating portion 3510 may vary depending on the shape of the heat discharging body 3300. The inner case 3500 can be housed in the heat discharging body 3300. The receiving portion 3510 of the inner case 3500 may be received in a receiving portion formed on the lower surface of the heat discharging body 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection portion 3530 that engages with the socket 3600. The connection portion 3530 may have a threaded structure corresponding to the thread groove structure of the socket 3600. The inner case 3500 is nonconductive. Therefore, electrical short circuit between the circuit portion 3400 and the heat discharging body 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 3600 may be coupled to the inner case 3500. Specifically, the socket 3600 may be engaged with the connection portion 3530 of the inner case 3500. The socket 3600 may have the same structure as a conventional incandescent bulb. The circuit portion 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected via a wire. Accordingly, when external power is applied to the socket 3600, the external power may be transmitted to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the threaded structure of the connection portion 3550.

17, the illuminating device, for example, a backlight unit according to the present invention includes a light guide plate 1210, a light emitting module 1240 for providing light to the light guide plate 1210, A bottom cover 1230 for housing the light guide plate 1210, the light emitting module unit 1240 and the reflection member 1220 may be included in the lower portion of the bottom cover 1220. However, the present invention is not limited thereto.

The light guide plate 1210 serves to diffuse light into a surface light source. The light guide plate 1210 may be made of a transparent material such as acrylic resin such as PMMA (polymethyl methacrylate), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1240 provides light to at least one side of the light guide plate 1210 and ultimately acts as a light source of a display device in which the backlight unit is disposed.

The light emitting module 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which the light is emitted is spaced apart from the light guiding plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may receive the light guide plate 1210, the light emitting module 1240, and the reflective member 1220. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined by the appended claims. You will understand.

100: light emitting device 110: substrate
120: mask layer 130: first conductivity type semiconductor layer
140: active layer 150: second conductivity type semiconductor layer
160: Hole diffusion preventing layer 170, 180: First electrode and second electrode

Claims (13)

Board;
A plurality of mask layers formed on the substrate at regular intervals;
A first conductive semiconductor layer formed on the mask layer;
An active layer formed on the first conductive semiconductor layer;
A second conductive semiconductor layer formed on the active layer; And
And a hole diffusion preventing layer formed in the second conductivity type semiconductor layer,
The upper surface and both side surfaces of the mask layer contact the first conductive type semiconductor layer,
The region between the adjacent mask layers and the hole diffusion preventing layer overlap vertically,
The hole diffusion preventing layer does not overlap with the mask layer in the vertical direction,
The hole diffusion preventing layer is surrounded by the second conductivity type semiconductor layer,
Wherein the hole diffusion preventing layer is formed in a plurality of spaces. The method according to claim 1,
And an ohmic layer disposed on the second conductive type semiconductor layer,
The ohmic layer may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide) ZnO, ZnO, IrOx, RuOx, NiO, Al2O3, Al2O3, Al2O3, Al2O3, AZO, ATO, GZO, IZON, IZO, At least one of RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, . The method according to claim 2,
And the lateral width of the hole diffusion preventing layer is equal to the distance between adjacent mask layers. The method according to claim 2,
And the lateral width of the hole diffusion preventing layer is shorter than the distance between the mask layers. The method according to claim 1,
And the hole diffusion preventing layer is formed between the upper surface and the lower surface of the second conductivity type semiconductor layer. The method of claim 5,
And the thickness of the mask layer is 1/2 of the thickness of the first conductive type semiconductor layer. delete delete delete delete delete delete delete

Images