KR102042437B1 - Light emitting device and lighting system having the same - Google Patents

Light emitting device and lighting system having the same Download PDF

Info

Publication number
KR102042437B1
KR102042437B1 KR1020130046061A KR20130046061A KR102042437B1 KR 102042437 B1 KR102042437 B1 KR 102042437B1 KR 1020130046061 A KR1020130046061 A KR 1020130046061A KR 20130046061 A KR20130046061 A KR 20130046061A KR 102042437 B1 KR102042437 B1 KR 102042437B1
Authority
KR
South Korea
Prior art keywords
semiconductor layer
type semiconductor
nano
layer
nanofiller
Prior art date
Application number
KR1020130046061A
Other languages
Korean (ko)
Other versions
KR20140127567A (en
Inventor
이성환
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020130046061A priority Critical patent/KR102042437B1/en
Publication of KR20140127567A publication Critical patent/KR20140127567A/en
Application granted granted Critical
Publication of KR102042437B1 publication Critical patent/KR102042437B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Devices (AREA)

Abstract

The light emitting device according to the embodiment includes a substrate, an n-type semiconductor layer formed on the substrate, an active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, and the n-type semiconductor layer. It includes a plurality of nanofiller structures formed.
According to the embodiment, by forming the nanofiller structure in the n-type semiconductor layer, it is possible to prevent the occurrence of stress in the light emitting device due to the lattice mismatch and the thermal expansion coefficient difference between the silicon substrate and the n-type semiconductor layer.

Description

LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME}

Embodiments relate to a light emitting device, and more particularly, to a light emitting device for improving the light emitting efficiency of the light emitting device and an illumination system having the same.

In general, a light emitting device is a compound semiconductor having a characteristic in which electrical energy is converted into light energy. The light emitting device may be formed of compound semiconductors such as group III and group V on the periodic table, and various colors may be adjusted by adjusting the composition ratio of the compound semiconductor. Implementation is possible.

When the forward voltage is applied, the n-layer electrons and the p-layer holes combine to emit energy corresponding to the bandgap energy of the conduction band and the valence band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, it becomes a light emitting device. For example, nitride semiconductors have high thermal stability and wide bandgap energy. I'm getting great attention. In particular, blue light emitting devices, green light emitting devices, and ultraviolet light emitting devices using nitride semiconductors are commercially used and widely used.

Conventional nitride semiconductors are formed by sequentially stacking an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a silicon (Si) substrate.

However, when an n-type semiconductor layer made of GaN is grown on a silicon substrate, since the substrate and the n-type semiconductor layer have different crystal structures, lattice mismatch occurs between the interfaces or thermal expansion coefficient difference (Thermal Expansion) Stress due to coeifficient difference occurs.

In order to solve the above problems, the embodiment provides a light emitting device and a lighting system having the same to prevent the stress generated in the light emitting device due to the lattice mismatch, the thermal expansion coefficient difference between the substrate and the n-type semiconductor layer It is for that purpose.

In order to achieve the above object, a light emitting device according to an embodiment includes a substrate, a first conductive semiconductor layer formed on the substrate, an active layer formed on the first conductive semiconductor layer, and a first formed on the active layer. A second conductive semiconductor layer and a plurality of nanofiller structures formed in the first conductive semiconductor layer are included.

According to the embodiment, by forming the nanofiller structure in the first conductive semiconductor layer, it is possible to prevent the stress generated inside the light emitting device due to the lattice mismatch and the thermal expansion coefficient difference between the silicon substrate and the first conductive semiconductor layer.

In addition, the embodiment has the effect of improving the luminous efficiency by removing the strain inside the light emitting device.

1 is a cross-sectional view showing a light emitting device according to the first embodiment.
2 is a cross-sectional view illustrating a first conductive semiconductor layer in which a nanofiller structure according to a first embodiment is formed.
3 is a plan view illustrating a first conductive semiconductor layer having a nanofiller structure according to a first embodiment.
4 is a cross-sectional view illustrating a light emitting device according to a second embodiment.
FIG. 5 is a cross-sectional view illustrating a first conductive semiconductor layer having a nanofiller structure according to a second embodiment.
6 is a cross-sectional view illustrating a light emitting device according to a third embodiment.
FIG. 7 is a cross-sectional view illustrating a first conductive semiconductor layer having a nanofiller structure according to a third embodiment. FIG.
8 and 9 are cross-sectional views illustrating modified examples of the first conductive semiconductor layer in which the nanofiller structure according to the third embodiment is formed.
10 is a cross-sectional view of a light emitting device package according to the embodiment.
11 to 13 are exploded perspective views showing embodiments of a lighting system having a light emitting device according to the embodiment.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a light emitting device according to a first embodiment, FIG. 2 is a cross-sectional view showing a first conductive semiconductor layer having a nanofiller structure according to a first embodiment, and FIG. 3 according to the first embodiment. A top plan view of a first conductivity type semiconductor layer having a nanofiller structure formed thereon.

Referring to FIG. 1, the light emitting device 100 according to the first embodiment may be formed on a substrate 110, a buffer layer 171 formed on the substrate 110, and a buffer layer 171. A first conductive semiconductor layer 120 having a pillar structure 124 formed thereon, a current diffusion layer 173 and a strain control layer 175 sequentially formed on the first conductive semiconductor layer 120, and the strain control An active layer 130 formed on the layer 175, an electron blocking layer 177 formed on the active layer 130, a second conductive semiconductor layer 140 formed on the electron blocking layer 177, An ohmic layer 179 formed on the second conductive semiconductor layer 140, a first electrode 150 formed on the first conductive semiconductor layer 120, and an ohmic layer 179 formed on the second conductive semiconductor layer 140. The second electrode 160 is included.

The substrate 110 may be formed of a material having excellent thermal conductivity, and may be a conductive substrate or an insulating substrate. For example, the substrate 110 may include sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga 2 0 3 At least one of may be used. An uneven structure may be formed on the substrate 110, but is not limited thereto.

A buffer layer 171 may be formed on the substrate 110.

The buffer layer 171 serves to mitigate lattice mismatch between the material of the light emitting structure and the substrate 110. The buffer layer 171 may be formed of at least one of Group III-V compound semiconductors, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and may be formed by a sputtering method. Alternatively, the buffer layer 171 may be an undoped gallium nitride layer.

The buffer layer 171 may be formed of one or more layers, and the buffer layer 171 formed of a plurality of layers may be formed of different materials. For example, when formed of two buffer layers 171, the first buffer layer may be an undoped gallium nitride layer, and the second buffer layer may be an Al x Ga (1-x) N (0≤x≤1) / GaN superlattice layer. Can be.

The second buffer layer, Al x Ga (1-x) N (0≤x≤1) / GaN superlattice layer, may effectively block dislocations due to lattice mismatch between the material of the light emitting structure and the substrate 110. Can be.

The first conductive semiconductor layer 120 according to the embodiment may be formed on the buffer layer 171.

The first conductivity-type semiconductor layer 120 may be formed of a semiconductor compound, for example, a compound semiconductor, such as Group 3-5, Group 2-6, or the like, and may be doped with an n-type dopant. The N-type dopant may include Si, Ge, Sn, Se, Te, but is not limited thereto.

On the other hand, having a composition formula of the first conductive semiconductor layer 120 may be In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may include a semiconductor material. The first conductive semiconductor layer 120 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The nanofiller structure 124 may be formed in the first conductive semiconductor layer 120. The nanofiller structure 124 has a lattice mismatch and thermal expansion coefficient generated in the substrate 110 and the first conductivity-type semiconductor layer 120 when the n-type semiconductor layer of GaN is grown on the silicon substrate 110. It prevents strain from occurring due to the difference.

The structure of the first conductivity-type semiconductor layer 120 on which the nanofiller structure 124 is formed will be described in more detail with reference to the accompanying drawings.

The current diffusion layer 173 may be formed on the first conductivity type semiconductor layer 120.

The current spreading layer 173 may increase light efficiency by improving internal quantum efficiency and may be an undoped gallium nitride layer.

In addition, an electron injection layer (not shown) may be further formed on the current diffusion layer 173. The electron injection layer may be a conductive gallium nitride layer. For example, in the electron injection layer, the n-type doping element is doped at a concentration of 6.0x10 18 atoms / cm 3 to 3.0x10 19 atoms / cm 3 , thereby enabling efficient electron injection.

A strain control layer 175 may be formed on the electron diffusion layer 173.

The strain control layer 175 effectively mitigates the stress caused by the lattice mismatch between the first conductive semiconductor layer 120 and the active layer 130. The strain control layer 175 may be formed in a multi-layer, for example, the strain control layer 175 may be a plurality of pairs of Al x In y Ga 1 -x- y N and GaN. It can be provided as.

The lattice constant of the strain control layer 175 may be larger than the lattice constant of the first conductive semiconductor layer 120, but smaller than the lattice constant of the active layer 130. Accordingly, stress due to the lattice constant difference between the active layer 130 and the first conductivity-type semiconductor layer 120 can be minimized.

The active layer 130 may be formed on the strain control layer 175.

The active layer 130 has an energy band inherent to the active layer (light emitting layer) material because electrons injected through the first conductive semiconductor layer 120 and holes injected through the second conductive semiconductor layer 140 formed thereafter meet each other. It is a layer that emits light with energy determined by.

The active layer 130 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 130 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 130 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

An electron blocking layer 177 may be formed on the active layer 130.

The electron blocking layer 177 may serve as electron blocking and cladding of the active layer, thereby improving luminous efficiency. The electron blocking layer 177 may be formed of an Al x In y Ga (1-xy) N (0 ≦ x ≦ 1,0 ≦ y ≦ 1) based semiconductor, and may be higher than the energy band gap of the active layer 130. It may have an energy band gap, and may be formed to a thickness of about 100 kPa to about 600 kPa, but is not limited thereto. Alternatively, the electron blocking layer 177 may be formed of Al z Ga (1-z) N / GaN (0 ≦ z ≦ 1) superlattice.

The second conductivity type semiconductor layer 140 may be formed on the electron blocking layer 177.

The second conductivity type semiconductor layer 140 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the second conductivity type dopant may be doped.

For example, a semiconductor having a composition formula of the second conductive type semiconductor layer 140 is In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may include a substance. As the dopant of the second conductive semiconductor layer 140, Mg, Zn, Ca, Sr, Ba, or the like may be included.

An ohmic layer 179 may be formed on the second conductive semiconductor layer 140.

The ohmic layer 179 may stack a single metal, a metal alloy, a metal oxide, or the like in multiple layers so as to efficiently inject carriers. For example, the ohmic layer 179 may be formed of a material having excellent electrical contact with a semiconductor. The ohmic layer 179 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or indium zinc tin oxide (IZTO). , Indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO Nitride ), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr , Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf may be formed including at least one, and is not limited to these materials.

The second electrode 160 is formed on the ohmic layer 179, and the first electrode 150 is formed on the n-type semiconductor layer 130 where the upper portion is exposed. Thereafter, the first electrode 150 and the second electrode 160 are finally connected to each other to complete the manufacture of the light emitting device.

2 and 3, the first conductive semiconductor layer 120 having the nanofiller structure according to the first embodiment includes a first n-type semiconductor layer 122 and the first n-type. And a trapezoidal pillar-shaped nanofiller structure 124 formed on the semiconductor layer 122 and a second n-type semiconductor layer 126 formed on the nanofiller structure 124.

The first first conductivity-type semiconductor layer 120 may be formed of a semiconductor compound, for example, compound semiconductors such as Groups 3-5, 2-6, and the like, and may be formed on the substrate to a predetermined thickness by MOCVD. have.

The nanofiller structure 124 may be formed on the first n-type semiconductor layer 122, and may be formed on the first n-type semiconductor layer 122 to be spaced at a predetermined interval. Here, the interval between the nanofiller structures 124 may be formed to have a nano size.

The nanopillar structure 124 may be formed of a pillar having a trapezoidal cross section. The nanopillar structure 124 may have a pillar shape having various shapes such as a square pillar and a cylinder, in addition to a pillar having a trapezoidal cross section.

When the cross section of the nanopillar structure 124 is formed of a trapezoidal pillar, the side of the nanopillar structure 124 has an inclination, so that each layer of the light emitting device is compared to a nanopillar structure formed of a square pillar or a cylinder. It will alleviate stress.

The upper diameter (Diameter, L1) of the nanofiller structure 124 may be formed from 100nm to 200nm, the lower diameter (L2) of the nanofiller structure 124 may be formed larger than the upper diameter (L1). For example, the lower diameter L2 of the nanofiller structure 124 may be 1.5 to 2.0 times the upper diameter L1 of the nanofiller structure 124, and may be formed to be 150 nm to 400 nm.

The height H1 of the nanopillar structure 124 may be formed to be 0.5 to 1 times the upper diameter L1 of the nanofiller structure 124, and may be, for example, 50 nm to 200 nm.

The nanofiller structure 124 may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. For example, the nanofiller structure 124 may be formed to correspond to the material of the first n-type semiconductor layer 122.

The nanofiller structure 124 grows the first n-type semiconductor layer 122 on the substrate 110 and then uses the inductively coupled plasma (ICP) etching method to form the first n-type semiconductor layer 122. By etching a portion of), it is possible to form a nanopillar structure 124 having a cross-sectional trapezoidal columnar shape.

As described above, when the nanofiller structure 124 is formed on the first n-type semiconductor layer 122, the second n-type semiconductor layer 126 may be formed on the nanofiller structure 124 by MOCVD.

Since the nanofiller structure 124 is formed only in a predetermined region on the first n-type semiconductor layer 122, the second n-type semiconductor layer 126 is formed of the nanofiller structure 124 and the nanofiller structure 124. The first n-type semiconductor layer 122 may be formed to cover the region.

As described above, in the embodiment, the nanofiller structure 124 is formed in the first conductivity type semiconductor layer 120, whereby the GaN layer region having many dislocations and the GaN layer region having good crystallinity may be evenly distributed. It is possible to reduce the stress in the device.

4 is a cross-sectional view illustrating a light emitting device according to a second embodiment, and FIG. 5 is a cross-sectional view illustrating a first conductive semiconductor layer in which a nanofiller structure according to a second embodiment is formed.

As shown in FIG. 4, the light emitting device 100 according to the second embodiment is formed on the substrate 110, the buffer layer 171 formed on the substrate 110, and the buffer layer 171. A first conductive semiconductor layer 220 having a nanofiller structure 224 formed thereon, a current diffusion layer 173 and a strain control layer 175 sequentially formed on the first conductive semiconductor layer 220, and The active layer 130 formed on the strain control layer 175, the electron blocking layer 177 formed on the active layer 130, and the second conductive semiconductor layer 140 formed on the electron blocking layer 177. And an ohmic layer 179 formed on the second conductive semiconductor layer 140, a first electrode 150 formed on the first conductive semiconductor layer 220, and an ohmic layer 179. It includes a second electrode 160 formed in. Here, since the configuration except for the first conductivity type semiconductor layer 220 overlaps with the first embodiment, it is omitted.

As shown in FIG. 5, the first conductivity-type semiconductor layer 220 according to the second embodiment has an inverted trapezoid formed on the first n-type semiconductor layer 222 and the first n-type semiconductor layer 222. The pillar-shaped nanofiller structure 224 includes a second n-type semiconductor layer 226 formed on the nanofiller structure 224.

The nanofiller structure 224 may be formed on the first n-type semiconductor layer 222, and may be formed on the first n-type semiconductor layer 222 so as to be spaced apart at a predetermined interval. Here, the interval between the nanofiller structures 224 may be formed to have a nano size.

Unlike the nanopillar structure of the first embodiment, the nanopillar structure 224 may be formed in a columnar shape having a trapezoidal cross section.

The lower diameter (Diameter, L4) of the nanofiller structure 224 may be formed from 100nm to 200nm, the upper diameter (L3) of the nanofiller structure 224 may be formed larger than the lower diameter (L4). For example, the upper diameter L3 of the nanofiller structure 224 may be formed to be 1.5 to 2.0 times the lower diameter L4 of the nanofiller structure 224, and may be formed to be 150 nm to 400 nm.

The height H2 of the nanopillar structure 224 may be formed to be 0.5 to 1 times the lower diameter of the nanofiller structure 224, for example, 50 nm to 200 nm.

The nanofiller structure 224 may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

After the nanofiller structure 224 is grown on the first n-type semiconductor layer 222 with the above-described material, a pillar having an inverted trapezoid cross section is formed by using an inductively coupled plasma (ICP) etching method. can do.

The second n-type semiconductor layer 226 may be formed on the nanofiller structure 224 by MOCVD, and may be formed to cover the nanofiller structure 224 and the first n-type semiconductor layer 222. .

As described above, the nanofiller structure 224 has a cross-sectional inverted trapezoidal column shape, thereby reducing the contact area with the first n-type semiconductor layer 222, which is a trapezoidal cross-section Compared to the nanopillar structure according to the first embodiment, the light emitting device may have an effect of further reducing stress.

6 is a cross-sectional view illustrating a light emitting device according to a third embodiment, FIG. 7 is a cross-sectional view illustrating a first conductive semiconductor layer having a nanofiller structure according to a third embodiment, and FIGS. 8 and 9 illustrate a third embodiment. A cross-sectional view showing a modified example of the first conductive semiconductor layer on which a nanofiller structure according to an example is formed.

Referring to FIG. 6, the light emitting device 100 according to the third embodiment may be formed on a substrate 110, a buffer layer 171 formed on the substrate 110, and a buffer layer 171 formed therein, such that the light emitting device 100 may be formed in a nano structure. A first conductive semiconductor layer 320 having pillar structures 323 and 327, a current diffusion layer 173 and a strain control layer 175 sequentially formed on the first conductive semiconductor layer 320, and The active layer 130 formed on the strain control layer 175, the electron blocking layer 177 formed on the active layer 130, and the second conductive semiconductor layer 140 formed on the electron blocking layer 177. And an ohmic layer 179 formed on the second conductive semiconductor layer 140, a first electrode 150 formed on the first conductive semiconductor layer 320, and an ohmic layer 179. It includes a second electrode 160 formed in. Here, since the configuration except for the first conductivity type semiconductor layer 320 is the same as that of the first embodiment, it is omitted.

As illustrated in FIG. 7, the first conductive semiconductor layer 320 according to the third embodiment may include a first n-type semiconductor layer 321 and a plurality of first n-type semiconductor layers 321. A first nanofiller structure 323, a second n-type semiconductor layer 325 formed on the first nanofiller structure 323, and a plurality of second formed on the second n-type semiconductor layer 325. A nanofiller structure 327 and a third n-type semiconductor layer 329 formed on the second nanofiller structure 327.

A plurality of first nanofiller structures 323 may be formed to be spaced apart on the first n-type semiconductor layer 321, and the first nanofiller structures 323 may have a columnar shape having a trapezoidal cross section. Here, the first nanofiller structure 323 may be formed to have a nano size by being deposited by ICP etching after the first n-type semiconductor layer 321 is deposited on the substrate 110 by MOCVD. have.

A plurality of second nanofiller structures 327 may be formed to be spaced apart on the second n-type semiconductor layer 325, and may have a columnar shape having a trapezoidal cross section to correspond to the first nanofiller structure 323. have.

A third n-type semiconductor layer 329 is formed on the second nanofiller structure 327, and the third n-type semiconductor layer 329 includes a second nanofiller structure 327 and a second n-type semiconductor layer. It may be formed to cover the top of the (325).

The second nanofiller structure 327 may be formed in a region that does not overlap the first nanofiller structure 323. For example, the second nanofiller structure 327 may be formed on the second n-type semiconductor layer 325 corresponding to a region between the first nanofiller structures 323.

An upper diameter, a lower diameter, and a height of the first nanopillar structure 323 and the second nanopillar structure 327 may be formed to be the same as the size of the nanopillar structure according to the first embodiment.

As shown in FIG. 7, the upper diameter L5 of the first nanopillar structure 323 may correspond to the upper diameter L6 of the second nanofiller structure 327, and the first nanopillar structure 323 The lower diameter L7 of) may correspond to the lower diameter L8 of the second nanofiller structure 327. In addition, the height H3 of the first nanopillar structure 323 may correspond to the height H4 of the second nanofiller structure 327.

The first nanopillar structures 323 may be formed to be spaced apart from each other, and the distance D1 between the first nanofiller structures 323 may correspond to the lower diameter L8 of the second nanofiller structure 327. .

As described above, the second nanofiller structure 327 is formed in a region between the first nanofiller structures 323, thereby further reducing the stress applied to the light emitting device.

Although the lower diameter L8 of the second nanofiller structure 327 is formed to be the same as the distance D1 between the first nanofiller structures 323, the first nanofiller structure 323 and The second nanopillar structure 327 may be formed as shown in FIGS. 8 and 9.

As shown in FIG. 8, the first nanofiller structure 323 is formed on the first n-type semiconductor layer 321, and the second n-type semiconductor layer 325 is formed on the first nanofiller structure 323. Is formed. The second nanofiller structure 327 is formed on the second n-type semiconductor layer 325, and the third n-type semiconductor layer 329 is formed on the second nanofiller structure 327. Here, the remaining configuration except for the arrangement structure of the first nanopillar structure 323 and the second nanopillar structure 327 is omitted because it overlaps with the structure according to the third embodiment.

The upper diameter L5, the lower diameter L7, and the height H3 of the first nanofiller structure 321 are the upper diameter L6, the lower diameter L8, and the height H4 of the second nanofiller structure 327. It may be formed to correspond to.

The first nanofiller structures 323 are formed to be spaced apart by a predetermined distance, and the distance D2 between the first nanofiller structures 323 is greater than the lower diameter L8 of the second nanofiller structures 327. Can be. From this, the first nanopillar structure 323 may be formed in a region that does not overlap the second nanofiller structure 327.

Alternatively, as shown in FIG. 9, the first nanofiller structure 323 is formed on the first n-type semiconductor layer 321, and the second n-type semiconductor layer ( 325 is formed. The second nanofiller structure 327 is formed on the second n-type semiconductor layer 325, and the third n-type semiconductor layer 329 is formed on the second nanofiller structure 327. Here, the rest of the configuration except for the arrangement structure of the first nanopillar structure 323 and the second nanopillar structure 327 is corresponding to the structure according to the third embodiment and will be omitted.

The first nanopillar structures 323 may be formed to be spaced apart from each other by a predetermined distance, and the second nanofiller structures 327 may be formed to overlap the first nanofiller structures 323. For example, the distance D3 between the first nanofiller structures 323 may be formed to be smaller than the lower diameter L9 of the second nanofiller structures 327.

As described above, the second nanofiller structure 327 may be partially overlapped with the first nanofiller structures 323 to more effectively block the stress applied to the light emitting device.

As described above, in the first conductive semiconductor layer according to the third embodiment, a nanofiller structure may be formed over multiple layers, thereby more effectively preventing strain caused by stress in the light emitting device.

In the above, although the first nanopillar structure 323 and the second nanopillar structure 327 are formed in a columnar shape having a trapezoidal cross section, the present invention is not limited thereto, and the first nanofiller structure 323 and the second nanofiller structure ( 327) can be formed in the shape of a column with an inverted trapezoid.

Alternatively, the first nanopillar structure 323 may be formed in a trapezoidal shape, and the second nanofiller structure 327 may be formed in an inverted trapezoidal shape. In addition, the first nanopillar structure 323 may be formed in an inverted trapezoidal shape, and the second nanofiller structure 327 may be formed in a trapezoidal shape.

10 is a cross-sectional view of a light emitting device package according to the embodiment. The light emitting device package according to the embodiment may be mounted with the light emitting device according to the first embodiment to the third embodiment.

The light emitting device package 400 includes a package body 405, a third electrode layer 413 and a fourth electrode layer 414 disposed on the package body 405, and a package body 405. The light emitting device 100 is disposed and electrically connected to the third electrode layer 413 and the fourth electrode layer 414, and a molding member 430 surrounding the light emitting device 100 is included.

The package body 405 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The third electrode layer 413 and the fourth electrode layer 414 are electrically separated from each other, and serve to provide power to the light emitting device 100. In addition, the third electrode layer 413 and the fourth electrode layer 414 may serve to increase light efficiency by reflecting the light generated from the light emitting device 100, and may be generated in the light emitting device 100. It may also serve to release heat to the outside.

The light emitting device 100 may be disposed on the package body 405 or on the third electrode layer 413 or the fourth electrode layer 414.

The light emitting device 100 may be electrically connected to the third electrode layer 413 and / or the fourth electrode layer 414 by any one of a wire method, a flip chip method, and a die bonding method. In the exemplary embodiment, the light emitting device 100 is electrically connected to the third electrode layer 413 and the fourth electrode layer 414 through wires, but is not limited thereto.

The molding member 430 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 430 may include a phosphor 432 to change the wavelength of the light emitted from the light emitting device 100.

11 to 13 are exploded perspective views showing embodiments of a lighting system having a light emitting device according to the embodiment.

As shown in FIG. 11, the lighting apparatus according to the embodiment includes a cover 2100, a light source module 2200, a heat radiator 2400, a power supply 2600, an inner case 2700, and a socket 2800. It may include. In addition, the lighting apparatus according to the embodiment may further include any one or more of the member 2300 and the holder 2500. The light source module 2200 may include a light emitting device 100 or a light emitting device package 200 according to an embodiment.

For example, the cover 2100 may have a shape of a bulb or hemisphere, may be hollow, and may be provided in an open shape. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter or excite the light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat sink 2400. The cover 2100 may have a coupling part coupled to the heat sink 2400.

An inner surface of the cover 2100 may be coated with a milky paint. The milky paint may include a diffuser to diffuse light. The surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100. This is for the light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent and opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the heat sink 2400. Thus, heat from the light source module 2200 is conducted to the heat sink 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the heat dissipator 2400, and has a plurality of light source parts 2210 and guide grooves 2310 into which the connector 2250 is inserted. The guide groove 2310 corresponds to the board and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 is reflected on the inner surface of the cover 2100 to reflect the light returned to the light source module 2200 side again toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 may block the accommodating groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside to provide the light source module 2200. The power supply unit 2600 is accommodated in the accommodating groove 2725 of the inner case 2700, and is sealed in the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide unit 2630, a base 2650, and an extension unit 2670.

The guide part 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A plurality of parts may be disposed on one surface of the base 2650. The plurality of components may include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided to be equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and the "-wire" may be electrically connected to the extension 2670, and the other end of the "+ wire" and the "-wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply part 2600 can be fixed inside the inner case 2700.

In addition, as shown in FIG. 12, the lighting apparatus according to the embodiment includes a cover 3100, a light source unit 3200, a heat sink 3300, a circuit unit 3400, an inner case 3500, and a socket 3600. can do. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source 3200 and the member 3350 may be inserted through the opening 3110.

The cover 3100 may be coupled to the radiator 3300 and may surround the light source unit 3200 and the member 3350. By combining the cover 3100 and the radiator 3300, the light source 3200 and the member 3350 may be blocked from the outside. The cover 3100 and the radiator 3300 may be coupled to each other through an adhesive, and may be coupled in various ways such as a rotation coupling method and a hook coupling method. The rotation coupling method is a method in which a screw thread of the cover 3100 is coupled to a screw groove of the heat sink 3300, and the cover 3100 and the heat sink 3300 are coupled by the rotation of the cover 3100. The hook coupling method is a method in which the jaw of the cover 3100 is fitted into the groove of the heat sink 3300 and the cover 3100 and the heat sink 3300 are coupled to each other.

The cover 3100 is optically coupled to the light source 3200. In detail, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor on the inside / outside or inside to excite the light from the light source unit 3200.

An inner surface of the cover 3100 may be coated with a milky paint. Here, the milky white paint may include a diffusion material for diffusing light. The surface roughness of the inner surface of the cover 3100 may be greater than the surface roughness of the outer surface of the cover 3100. This is to sufficiently scatter and diffuse the light from the light source unit 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 3100 may be a transparent material that can be seen by the light source unit 3200 and the member 3350 from the outside, or may be an invisible opaque material. The cover 3100 may be formed through, for example, blow molding.

The light source unit 3200 may be disposed on the member 3350 of the radiator 3300 and may be disposed in plural. Specifically, the light source 3200 may be disposed on one or more side surfaces of the plurality of side surfaces of the member 3350. In addition, the light source 3200 may be disposed at an upper end of the side of the member 3350.

The light source unit 3200 may be disposed on three side surfaces of six side surfaces of the member 3350. However, the present invention is not limited thereto, and the light source 3200 may be disposed on all sides of the member 3350. The light source 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one surface of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a circuit pattern printed on an insulator. For example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like may be printed. It may include. In addition, it is possible to use a Chips On Board (COB) type that can directly bond the LED chip unpacked on the printed circuit board. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color that reflects light efficiently, for example, white, silver, or the like. The substrate 3210 may be electrically connected to the circuit unit 3400 accommodated in the radiator 3300. The substrate 3210 and the circuit unit 3400 may be connected by, for example, a wire. A wire may pass through the radiator 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip emitting red, green, or blue light or a light emitting diode chip emitting UV. Here, the LED chip may be a horizontal type or a vertical type, and the LED chip may emit blue, red, yellow, or green. Can be.

The light emitting device 3230 may have a phosphor. The phosphor may be one or more of a Garnet-based (YAG, TAG), a silicate (Silicate), a nitride (Nitride) and an oxynitride (oxyxyride). Alternatively, the phosphor may be one or more of a yellow phosphor, a green phosphor, and a red phosphor.

The radiator 3300 may be coupled to the cover 3100 to radiate heat from the light source unit 3200. The radiator 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the top surface 3310 of the heat sink 3300. An upper surface 3310 of the heat sink 3300 may be coupled to the cover 3100. The top surface 3310 of the heat sink 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of heat sink fins 3370 may be disposed on the side surface 3330 of the heat sink 3300. The heat radiating fins 3370 may extend outward from the side surface 3330 of the heat sink 3300 or may be connected to the side surface 3330. The heat dissipation fins 3370 may improve heat dissipation efficiency by widening a heat dissipation area of the heat dissipator 3300. Here, the side surface 3330 may not include the heat dissipation fins 3370.

The member 3350 may be disposed on an upper surface 3310 of the heat sink 3300. The member 3350 may be integrated with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal pillar. Specifically, the member 3350 may be a hexagonal pillar. The member 3350 of the hexagonal column has a top side and a bottom side and six sides. Here, the member 3350 may be a circular pillar or an elliptical pillar as well as a polygonal pillar. When the member 3350 is a circular pillar or an elliptic pillar, the substrate 3210 of the light source unit 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six side surfaces of the member 3350. The light source unit 3200 may be disposed on all six side surfaces, or the light source unit 3200 may be disposed on some of the six side surfaces. In FIG. 16, the light source unit 3200 is disposed on three side surfaces of the six side surfaces.

The substrate 3210 is disposed on the side surface of the member 3350. Side surfaces of the member 3350 may be substantially perpendicular to the top surface 3310 of the heat sink 3300. Accordingly, the substrate 3210 and the top surface 3310 of the heat sink 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is for receiving heat generated from the light source unit 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn), or an alloy of the metals. Alternatively, the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are lighter than metals and have the advantage of having unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the received power to match the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat sink 3300. In detail, the circuit unit 3400 may be accommodated in the inner case 3500 and may be accommodated in the radiator 3300 together with the inner case 3500. The circuit unit 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may have an oval or polygonal plate shape. The circuit board 3410 may have a circuit pattern printed on an insulator.

The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected through, for example, a wire. A wire may be disposed in the heat sink 3300 to connect the circuit board 3410 and the board 3210.

The plurality of components 3430 may include, for example, a DC converter for converting an AC power provided from an external power source into a DC power source, a driving chip for controlling the driving of the light source unit 3200, and the protection of the light source unit 3200. Electrostatic discharge (ESD) protection element and the like.

The inner case 3500 accommodates the circuit unit 3400 therein. The inner case 3500 may have an accommodating part 3510 for accommodating the circuit part 3400.

For example, the accommodating part 3510 may have a cylindrical shape. The shape of the accommodating part 3510 may vary depending on the shape of the heat sink 3300. The inner case 3500 may be accommodated in the heat sink 3300. The accommodating part 3510 of the inner case 3500 may be accommodated in an accommodating part formed on a lower surface of the heat sink 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection part 3530 that is coupled to the socket 3600. The connection part 3530 may have a thread structure corresponding to the screw groove structure of the socket 3600. The inner case 3500 is an insulator. Therefore, an electrical short circuit between the circuit part 3400 and the heat sink 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 3600 may be coupled to the inner case 3500. In detail, the socket 3600 may be coupled to the connection part 3530 of the inner case 3500. The socket 3600 may have a structure such as a conventional conventional incandescent bulb. The circuit unit 3400 and the socket 3600 are electrically connected to each other. Electrical connection between the circuit unit 3400 and the socket 3600 may be connected through a wire. Therefore, when external power is applied to the socket 3600, the external power may be transferred to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the screw structure of the connection part 3550.

In addition, as shown in FIG. 13, the lighting apparatus according to the embodiment, for example, the backlight unit includes a light guide plate 1210, a light emitting module unit 1240 for providing light to the light guide plate 1210, and the light guide plate 1210. A bottom cover 1230, which accommodates the reflective member 1220, the light guide plate 1210, the light emitting module unit 1240, and the reflective member 1220, may be included, but is not limited thereto.

The light guide plate 1210 serves to surface light by diffusing light. The light guide plate 1210 is made of a transparent material, for example, an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module unit 1240 provides light to at least one side of the light guide plate 1210 and ultimately serves as a light source of a display device in which the backlight unit is disposed.

The light emitting module unit 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module unit 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242, wherein the substrate 1242 is connected to the light guide plate 1210. It may be encountered, but is not limited thereto.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB), and the like, but is not limited thereto.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which light is emitted is spaced apart from the light guide plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflective member 1220 may improve the luminance of the backlight unit by reflecting the light incident on the lower surface of the light guide plate 1210 upward. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may accommodate the light guide plate 1210, the light emitting module unit 1240, the reflective member 1220, and the like. To this end, the bottom cover 1230 may be formed in a box shape having an upper surface opened, but is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

Although described above with reference to the drawings and embodiments, those skilled in the art will understand that the embodiments can be modified and changed in various ways without departing from the spirit of the embodiments described in the claims below. Could be.

100: light emitting element 110: substrate
120, 220, 320: n-type semiconductor layer 124, 224, 323, 327: nanofiller structure
130: active layer 140: p-type semiconductor layer
150: first electrode 160: second electrode

Claims (15)

Board;
A first conductive semiconductor layer formed on the substrate and including a first n-type semiconductor layer and a second n-type semiconductor layer disposed on the first n-type semiconductor layer;
A plurality of first nanofiller structures disposed in the first conductive semiconductor layer and spaced apart from each other by a predetermined interval;
An active layer formed on the first conductive semiconductor layer; And
A second conductive semiconductor layer formed on the active layer,
The first nano-pillar structure is in contact with the top surface of the first n-type semiconductor layer and disposed inside the second n-type semiconductor layer,
The first conductive semiconductor layer includes a third n-type semiconductor layer disposed on the second n-type semiconductor layer,
A plurality of second nano-filler structure is disposed in the third n-type semiconductor layer spaced apart by a predetermined interval,
The second nanofiller structure is in contact with the top surface of the second n-type semiconductor layer,
A portion of the first nano-pillar structure and the second nano-pillar structure are disposed overlapping in the vertical direction,
The first nano-pillar structure and the second nano-pillar structure is formed of a column having a trapezoidal cross section,
The distance between the adjacent first nano-filler structure is smaller than the lower diameter of the second nano-filler structure. The method of claim 1,
The lower diameter of the first nano-filler structure and the second nano-pillar structure is a light emitting device is formed 1.5 times to 2.0 times the upper diameter of the first nano-filler structure and the second nano-filler structure. The method of claim 2,
The first nano-filler structure and the second nano-filler structure is formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP . The method of claim 3,
The height of the first nano-filler structure and the second nano-filler structure is a light emitting device is formed 0.5 times to 1 times the upper diameter of the first nano-filler structure and the second nano-filler structure. delete delete delete delete delete delete delete delete delete delete delete
KR1020130046061A 2013-04-25 2013-04-25 Light emitting device and lighting system having the same KR102042437B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020130046061A KR102042437B1 (en) 2013-04-25 2013-04-25 Light emitting device and lighting system having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130046061A KR102042437B1 (en) 2013-04-25 2013-04-25 Light emitting device and lighting system having the same

Publications (2)

Publication Number Publication Date
KR20140127567A KR20140127567A (en) 2014-11-04
KR102042437B1 true KR102042437B1 (en) 2019-11-08

Family

ID=52451780

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130046061A KR102042437B1 (en) 2013-04-25 2013-04-25 Light emitting device and lighting system having the same

Country Status (1)

Country Link
KR (1) KR102042437B1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270431A (en) * 2007-04-18 2008-11-06 Sony Corp Manufacturing methods of light-emitting diode, semiconductor device, electronic device, and nitride-based iii-v compound semiconductor substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887067B1 (en) * 2006-02-14 2009-03-04 삼성전기주식회사 Manufacturing Method for Semiconductor Emitting Device with nano pattern structure
KR101125397B1 (en) * 2009-10-20 2012-04-02 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
KR20120029276A (en) * 2010-09-16 2012-03-26 삼성엘이디 주식회사 Manufacturing method of nitride single crystal, semiconductor light emitting devide using the same, and manufacturing method of the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270431A (en) * 2007-04-18 2008-11-06 Sony Corp Manufacturing methods of light-emitting diode, semiconductor device, electronic device, and nitride-based iii-v compound semiconductor substrate

Also Published As

Publication number Publication date
KR20140127567A (en) 2014-11-04

Similar Documents

Publication Publication Date Title
KR102328457B1 (en) Light emitting device, light emitting device manufacturing method and lighting system having the same
KR101936312B1 (en) Light emitting device
KR102175320B1 (en) Light emitting device and lighting system having the same
KR101916140B1 (en) Light emitting device
KR101956048B1 (en) Light emitting device
KR102261948B1 (en) Light emitting device and lighting system having the same
KR102249640B1 (en) Light emitting device, light emitting device package having the same, and light system having the same
KR102199983B1 (en) Light emitting device and light emitting device package having the same
KR101997253B1 (en) Light emitting device and lighting system having the same
KR102119836B1 (en) Light emitting device and lighting system having the same
KR102042437B1 (en) Light emitting device and lighting system having the same
KR101997255B1 (en) Light emitting device
KR101961303B1 (en) Light emitting device package and light emitting system
KR102042263B1 (en) Light emitting device and lighting system having the same
KR20150089816A (en) Light emitting device and lighting system having the same
KR102187482B1 (en) Light emitting device and lighting system having the same
KR102212739B1 (en) Light emitting device and lighting system having the same
KR102313352B1 (en) Light emitting device and lighting system having the same
KR101969336B1 (en) Light emitting device
KR102153090B1 (en) Light emitting device
KR102250519B1 (en) Light emitting device, light emitting device package having the same, and light system having the same
KR20140089745A (en) Light emitting device and lighting system having the same
KR20140059445A (en) Light emitting device
KR20140009794A (en) Light emitting device
KR20140081140A (en) Light emitting device and lighting system having the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant