KR20140081140A - Light emitting device and lighting system having the same - Google Patents

Light emitting device and lighting system having the same Download PDF

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Publication number
KR20140081140A
KR20140081140A KR1020120150547A KR20120150547A KR20140081140A KR 20140081140 A KR20140081140 A KR 20140081140A KR 1020120150547 A KR1020120150547 A KR 1020120150547A KR 20120150547 A KR20120150547 A KR 20120150547A KR 20140081140 A KR20140081140 A KR 20140081140A
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South Korea
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layer
light emitting
emitting device
barrier layer
substrate
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KR1020120150547A
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Korean (ko)
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임현철
정명훈
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엘지이노텍 주식회사
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Priority to KR1020120150547A priority Critical patent/KR20140081140A/en
Publication of KR20140081140A publication Critical patent/KR20140081140A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

A light emitting device according to the present invention includes a substrate, a first conductive semiconductor layer which is formed on the substrate, an active layer which is formed on the first conductive semiconductor layer, a barrier layer which includes a hole injection improving layer which is formed on the active layer and a magnesium diffusion preventing layer which is formed on the hole injection improving layer, and a second conductive semiconductor layer which is formed on the barrier layer. The preset invention improves luminous intensity by forming the hole injection improving layer and the magnesium diffusion preventing layer between the second conductive semiconductor layer and the active layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device,

The present invention relates to a light emitting device, and more particularly, to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system for improving light emitting characteristics.

Light Emitting Device is a compound semiconductor whose electrical energy is converted into light energy. It can be produced from compound semiconductors such as Group III and Group V on the periodic table and can be implemented in various colors by controlling the composition ratio of compound semiconductors. Do.

When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. For example, nitride semiconductors are widely used in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. I am receiving great attention. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.

Conventional nitride semiconductors are formed of an n-type first conductivity type semiconductor layer, an active layer, and a p-type second conductivity type semiconductor layer, and enhance the radiative recombination of electrons and holes in the active layer Much research is under way.

However, in the conventional nitride semiconductor, it is difficult to inject a large amount of holes into the active layer due to the low carrier concentration and mobility of the p-type second conductivity type semiconductor layer, resulting in a problem of lowering the light intensity.

In addition, in the conventional nitride semiconductor, a certain amount of magnesium (Mg) diffuses into the active layer, and the brightness of the light emitting device is lowered due to magnesium diffused into the active layer.

In order to solve the above-mentioned problems, it is an object of the present invention to provide a light emitting device and an illumination system including the light emitting device for improving the luminous intensity of the light emitting device.

According to an aspect of the present invention, there is provided a light emitting device comprising: a substrate; a first conductive semiconductor layer formed on the substrate; an active layer formed on the first conductive semiconductor layer; A barrier layer including an injection enhancement layer, a magnesium diffusion prevention layer formed on the hole injection enhancement layer, and a second conductivity type semiconductor layer formed on the barrier layer.

The present invention has an effect of preventing a decrease in luminous intensity by magnesium by forming a magnesium diffusion preventing layer between the p-type second conductivity type semiconductor layer and the active layer.

Further, according to the present invention, the hole injection improving layer is formed between the second conductivity type semiconductor layer and the active layer, so that the amount of hole injected into the active layer is increased to improve the luminous intensity.

Further, the present invention has the effect of preventing the diffusion of magnesium more effectively by forming the magnesium diffusion preventing layer and the hole injection improving layer in multiple layers.

1 is a cross-sectional view of a light emitting device according to the present invention,
2 is a cross-sectional view showing a barrier layer of a light emitting device according to the present invention,
FIG. 3 is a cross-sectional view showing a state where holes and magnesium of the light emitting device according to the present invention pass through the barrier layer,
4 to 9 are sectional views showing a method of manufacturing a light emitting device according to the present invention,
10 is a cross-sectional view of a light emitting device package according to the present invention, and Fig.
11 to 13 are exploded perspective views illustrating embodiments of an illumination system having a light emitting device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 1 is a cross-sectional view illustrating a light emitting device according to the present invention, FIG. 2 is a cross-sectional view illustrating a barrier layer of a light emitting device according to the present invention, and FIG. And FIGS. 4 to 9 are cross-sectional views illustrating a method of manufacturing the light emitting device according to the present invention.

1 to 3, a light emitting device 100 according to the present invention includes a substrate 110, a buffer layer 181 formed on the substrate 110, a first conductive layer 130 formed on the buffer layer 181, A current diffusion layer 183 and a strain control layer 185 formed sequentially on the first conductivity type semiconductor layer 120 such that an upper portion of the first conductivity type semiconductor layer 120 is exposed, An active layer 130 formed on the strain control layer 185, a barrier layer 140 formed on the active layer 130, an electron blocking layer 187 formed on the barrier layer 140, A second conductivity type semiconductor layer 150 formed on the electron blocking layer 187, an ohmic layer 189 formed on the second conductivity type semiconductor layer 150, And a second electrode 170 formed on the ohmic layer 189. The first electrode 160 is formed on the ohmic layer 189,

The substrate 110 may be formed of a material having excellent thermal conductivity, or may be a conductive substrate or an insulating substrate. For example, the substrate 110 is a sapphire (Al 2 O 3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga 2 0 3 May be used. The concavo-convex structure may be formed on the substrate 110, but the present invention is not limited thereto.

A buffer layer 181 may be formed on the substrate 110.

The buffer layer 181 serves to mitigate the lattice mismatch between the material of the light emitting structure and the substrate 110. The buffer layer 181 may be a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN , InAlGaN, and AlInN. Alternatively, the buffer layer 181 may be an undoped gallium nitride layer.

The buffer layer 181 may be formed of one or more layers, and the buffer layer 181 formed by stacking a plurality of layers may be formed of different materials. For example, when formed of two buffer layers 181, the first buffer layer may be an undoped gallium nitride layer, and the second buffer layer may be formed of Al x Ga 1-x N (0 ? X? 1) / GaN super lattice Layer.

The second buffer layer Al x Ga (1-x) N (0 ? X? 1) / GaN superlattice layer effectively blocks dislocations due to lattice mismatch between the material of the light emitting structure and the substrate 110 .

The first conductive semiconductor layer 120 may be formed on the buffer layer 181.

The first conductive semiconductor layer 120 may be formed of a compound semiconductor such as a Group 3-Group-5, Group-6, or Group-6 semiconductor, and may be doped with a first conductive dopant. When the first conductive semiconductor layer 120 is an N-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, and Te as an N-type dopant.

Alternatively, the first conductive semiconductor layer 120 may have a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + y? 1) Semiconductor material. The first conductive semiconductor layer 120 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP and InP.

A current diffusion layer 183 may be formed on the first conductive semiconductor layer 120.

The current diffusion layer 183 may increase the light efficiency by improving the internal quantum efficiency and may be an undoped GaN layer.

Further, a strain control layer 185 may be formed on the current diffusion layer 183.

The strain control layer 185 effectively relaxes the stress caused by the lattice mismatch between the first conductive semiconductor layer 120 and the active layer 130. For example, the strain control layer 185 may include a plurality of pairs of Al x In y Ga 1 -x- y N and GaN, and the strain control layer 185 may be formed in a multi- As shown in FIG.

The lattice constant of the strain control layer 185 may be greater than the lattice constant of the first conductivity type semiconductor layer 120 but less than the lattice constant of the active layer 130. Accordingly, the stress due to the difference in lattice constant between the active layer 130 and the first conductivity type semiconductor layer 120 can be minimized.

The active layer 130 may be formed on the strain control layer 185.

Electrons injected through the first conductive type semiconductor layer 120 and holes injected through the second conductive type semiconductor layer 150 to be formed later are brought into mutual contact with each other to form an energy band unique to the active layer Which emits light having an energy determined by < RTI ID = 0.0 >

The active layer 130 may be formed of at least one of a single quantum well structure, a multi quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer 130 may be formed of a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 130 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But is not limited thereto. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

A barrier layer 140 according to the present invention may be formed on the active layer 130.

The barrier layer 140 improves hole injection and prevents magnesium diffusion to improve brightness, and may be formed by laminating a GaN / InGaN layer. The barrier layer 140 may have a thickness t1 ranging from 5 nm to 20 nm, for example, 10 nm.

When the thickness t1 of the barrier layer 140 is less than 5 nm, the quality of the barrier layer 140 deteriorates and it can not serve as the barrier layer 140. When the thickness t1 of the barrier layer 140 is When the thickness is 20 nm or more, there is a problem that the hole injection is not smoothly performed.

The barrier layer 140 may be formed by stacking two or more layers, for example, to form a barrier layer having five periods. In the embodiment of the present invention, the first barrier layer 140a to the fifth barrier layer 140e may be included.

The first barrier layer 140a includes a hole injection improving layer 142a and a magnesium diffusion preventing layer 142b.

The hole injection improving layer 142a may be formed of GaN. The thickness t3 of the hole injection enhancing layer 142a may be 0.5 nm to 5 nm, and may be 0.5 nm, for example. If the thickness t3 of the hole injection enhancing layer 142a is 5 nm or more, a problem of lowering the hole main input may occur. The thickness t3 of the hole injection enhancing layer 142a is not limited thereto and may be formed to a thickness of 1/4 of the thickness t2 of the first barrier layer 140a.

The hole injection enhancing layer 142a improves the hole injection to improve the luminous intensity of the light emitting device. At the same time, the hole injection enhancing layer 142a has an effect of controlling the process temperature and growth atmosphere of the light emitting device.

The magnesium diffusion prevention layer 144a may be formed of InGaN material. The thickness t4 of the magnesium diffusion prevention layer 144a may be 0.5 nm to 15 nm, and may be 1.5 nm, for example. When the thickness t4 of the magnesium diffusion prevention layer 144a is 15 nm or more, the thickness of InGaN may become thick due to the characteristics of InGaN grown at a relatively low temperature.

The thickness t4 of the magnesium prevention diffusion layer 144a is not limited thereto and may be set to be three times the thickness t3 of the hole injection improving layer 142a and the thickness t3 of the first barrier layer 140a may be 3 / 4 < / RTI >

The magnesium blocking of the magnesium diffusion preventing layer 144a can be determined by adjustment to phosphorus (In), and the content of In contained in the magnesium diffusion preventing layer 144a is 1% to 15%, for example, 7% . When the content of In contained in the magnesium diffusion prevention layer 144a is 15%, the crystallinity of the barrier layer 140 is deteriorated, and the failure of the device can be caused. Thus, the magnesium diffusion preventing layer 144a can prevent diffusion of magnesium injected into the active layer 130, thereby improving the brightness.

Although the magnesium diffusion barrier layer 144a has been described as an example of InGaN in the above description, it is not limited thereto, and may be formed of another InGaN material including In.

Although the first barrier layer 140a has been described above, the second barrier layer 140b to the fifth barrier layer 140e may be formed to correspond to the first barrier layer 140a. For example, the thicknesses of the first barrier layer 140a to the fifth barrier layer 140e may be the same or different from each other. When the thicknesses of the barrier layers 140 are different from each other, The improvement layer and the magnesium diffusion preventing layer.

3, when the holes and magnesium reach the top of the fifth barrier layer 140e, the holes will pass through the fifth barrier layer 140e while the magnesium will pass through the fifth barrier layer 140e And is blocked by the magnesium diffusion preventing layer 140e.

Holes passing through the fifth barrier layer 140e reach the first barrier layer 140a via the fourth barrier layer 140d, the third barrier layer 140c and the second barrier layer 140b, The first barrier layer 140a can be easily passed through the first barrier layer 140a.

On the other hand, a part of magnesium not blocked by the fifth barrier layer 140e is prevented from diffusing through the fourth barrier layer 140d, the third barrier layer 140c, and the second barrier layer 140b, A small amount of magnesium can be blocked by the magnesium diffusion preventing layer 144a of the first barrier layer 140a to completely prevent diffusion of magnesium.

As described above, since the magnesium diffusion preventing layer can not be formed over a certain thickness, if the hole injection improving layer is formed between the magnesium diffusion preventing layers, the hole injection can be smoothly performed and the magnesium diffusion can be prevented more effectively.

Although the barrier layer 140 is formed in units of five cycles in the above description, the barrier layer 140 is not limited to five cycles, and may be formed in five cycles or in five cycles or more.

Hereinafter, a manufacturing process of the light emitting device according to the present invention will be described with reference to FIGS. 4 to 9. FIG.

4, the buffer layer 181 and the first conductivity type semiconductor layer 120 are sequentially formed on one surface of the substrate 110 when the substrate 110 is provided.

The buffer layer 181 may be formed by depositing GaN on the substrate 110 to a predetermined thickness by sputtering. As the buffer layer 181, AIN and ZnO may be used in addition to GaN.

The first conductive semiconductor layer 120 may be formed by depositing a Group 3-5 or Group 2-6 compound. The first conductive semiconductor layer 120 may be formed by a CVD method, molecular beam epitaxy (MBE), sputtering, or vapor phase epitaxy (HVPE).

The first conductivity type semiconductor layer 120 may be formed by depositing a silane containing an n-type impurity such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ) Gas (SiH 4 ) may be implanted and formed.

5, when the buffer layer 181 and the first conductivity type semiconductor layer 120 are formed on the substrate 110, a current diffusion layer 183, a strain A control layer 185, and an active layer 130 sequentially.

The current diffusion layer 183 may generate a prompt GaN layer (undoped GaN layer) is sentenced by sputtering, a strain control layer 185 is deposited a Al x In y Ga 1 -x- y N and GaN single-layer or And may be formed in multiple layers.

The active layer 130 is selectively supplied to a source of H 2 and / or TMGa (or TEGa), TNin, and TMAI at a predetermined growth temperature, for example, in a range of 700 to 900 degrees to form a well layer made of GaN or InGaN, , A barrier layer made of AlGaN, InGaN or InAlGaN can be formed.

6, a current diffusion layer 183, a strain control layer 185, and an active layer 130 are sequentially formed on the first conductive semiconductor layer 120, 1 barrier layer 140a.

First, the hole injection improving layer 142a may be formed by depositing GaN on the active layer 130 to a predetermined thickness by, for example, sputtering or chemical vapor deposition (MOCVD). The thickness of the hole injection improving layer 142a may be Lt; / RTI >

When the hole injection improving layer 142a is formed on the active layer 130, the magnesium diffusion preventing layer 144a may be formed by depositing InGaN to a certain thickness on the hole injection improving layer 142a. Here, the magnesium diffusion prevention layer 144a may be formed to have a thickness of 1.5 nm.

7, when the first barrier layer 140a is formed on the active layer 130, a second barrier layer 140b to a fifth barrier layer 140e are formed on the first barrier layer 140a. Forming step.

The second barrier layer 140b to the fifth barrier layer 140e may be formed in the same manner as the first barrier layer 140a by sequentially stacking the hole injection enhancing layer and the magnesium enhancing layer . Here, the thicknesses of the first barrier layer 140a to the fifth barrier layer 140e may be the same or different from each other.

8, when a barrier layer 140 is formed on the active layer 130, an electron blocking layer 187, a second conductivity type semiconductor layer 150, and an ohmic layer (not shown) are formed on the barrier layer 140 189).

The electron blocking layer 187 may be formed of AlxInyGa (1-x-y) having an Al composition ranging from 1 to 30%.

The second conductivity type semiconductor layer 150 is formed by injecting biscyclopentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } on the electron blocking layer 187 And the second conductive semiconductor layer 150 may be a p-type GaN layer. The ohmic layer 189 may be formed by depositing ITO on the second conductive type semiconductor layer 150 to a predetermined thickness.

9, when the electron blocking layer 187, the second conductivity type semiconductor layer 150, and the ohmic layer 189 are formed on the barrier layer 140, the first electrode 160 and the second electrode 160 The electrode 170 may be formed.

A mesa etching process may be performed to expose a portion of the first conductivity type semiconductor layer 120. For example, the ohmic layer 189, the second conductivity type semiconductor layer 150, the electron blocking layer 187, A part of the barrier layer 140, the active layer 130, the strain control layer 185 and the current diffusion layer 183 may be removed to expose the upper portion of the first conductivity type semiconductor layer 120.

The first electrode 160 may be formed on the first conductive semiconductor layer 120 and the second electrode 170 may be formed on the ohmic layer 189. [ So that the manufacturing process of the light emitting device according to the present invention can be completed.

10 is a cross-sectional view of a light emitting device package according to the present invention. The light emitting device package according to the present invention may be mounted with the light emitting device having the structure as described above.

The light emitting device package 200 includes a package body portion 205, a third electrode layer 213 and a fourth electrode layer 214 disposed on the package body portion 205, A light emitting device 100 arranged to be electrically connected to the third electrode layer 213 and the fourth electrode layer 214 and a molding member 230 surrounding the light emitting device 100 are included.

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and the inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be disposed on the package body 205 or may be disposed on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. The light emitting device 100 is electrically connected to the third electrode layer 213 and the fourth electrode layer 214 through wires. However, the present invention is not limited thereto.

The molding member 230 surrounds the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100.

11 to 13 are exploded perspective views illustrating embodiments of an illumination system having a light emitting device according to the present invention.

11, the lighting apparatus according to the present invention includes a cover 2100, a light source module 2200, a heat discharger 2400, a power supply unit 2600, an inner case 2700, a socket 2800, . Further, the illumination device according to the embodiment may further include at least one of the member 2300 and the holder 2500. The light source module 2200 may include the light emitting device 100 or the light emitting device package 200 according to the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat discharging body 2400. The cover 2100 may have an engaging portion that engages with the heat discharging body 2400.

The inner surface of the cover 2100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is for sufficiently diffusing and diffusing the light from the light source module 2200 and emitting it to the outside.

The cover 2100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 2100 may be transparent so that the light source module 2200 is visible from the outside, and may be opaque. The cover 2100 may be formed by blow molding.

The light source module 2200 may be disposed on one side of the heat discharging body 2400. Accordingly, heat from the light source module 2200 is conducted to the heat discharger 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on the upper surface of the heat discharging body 2400 and has guide grooves 2310 through which the plurality of light source portions 2210 and the connector 2250 are inserted. The guide groove 2310 corresponds to the substrate of the light source unit 2210 and the connector 2250.

The surface of the member 2300 may be coated or coated with a light reflecting material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects the light reflected by the inner surface of the cover 2100 toward the cover 2100 in the direction toward the light source module 2200. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 2400 and the connecting plate 2230. The member 2300 may be formed of an insulating material to prevent an electrical short circuit between the connection plate 2230 and the heat discharging body 2400. The heat discharger 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to dissipate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating portion 2710 of the inner case 2700. Therefore, the power supply unit 2600 housed in the insulating portion 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides the electrical signal to the light source module 2200. The power supply unit 2600 is housed in the receiving groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide portion 2630 may be inserted into the holder 2500. A plurality of components may be disposed on one side of the base 2650. The plurality of components include, for example, a DC converter for converting AC power supplied from an external power source into DC power, a driving chip for controlling driving of the light source module 2200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension portion 2670 has a shape protruding outward from the other side of the base 2650. The extension portion 2670 is inserted into the connection portion 2750 of the inner case 2700 and receives an external electrical signal. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 2670 and the other end of the positive wire and the negative wire are electrically connected to the socket 2800 .

The inner case 2700 may include a molding part together with the power supply part 2600. The molding part is a hardened portion of the molding liquid so that the power supply unit 2600 can be fixed inside the inner case 2700.

12, the lighting apparatus according to the present invention includes a cover 3100, a light source unit 3200, a heat sink 3300, a circuit unit 3400, an inner case 3500, and a socket 3600 can do. The light source unit 3200 may include a light emitting device or a light emitting device package according to the embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110. The light source unit 3200 and the member 3350 can be inserted through the opening 3110. [

The cover 3100 may be coupled to the heat discharging body 3300 and surround the light source unit 3200 and the member 3350. The light source part 3200 and the member 3350 may be shielded from the outside by the combination of the cover 3100 and the heat discharging body 3300. The coupling between the cover 3100 and the heat discharging body 3300 may be combined through an adhesive, or may be combined by various methods such as a rotational coupling method and a hook coupling method. The rotation coupling method is a method in which a screw thread of the cover 3100 is engaged with a thread groove of the heat dissipating body 3300 so that the cover 3100 is coupled to the heat dissipating body 3300 by rotation of the cover 3100 In the hook coupling method, the protrusion of the cover 3100 is inserted into the groove of the heat discharging body 3300, and the cover 3100 and the heat discharging body 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200. Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200. The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor inside / outside or in the inside thereof to excite light from the light source part 3200.

The inner surface of the cover 3100 may be coated with a milky white paint. Here, the milky white paint may include a diffusing agent for diffusing light. The surface roughness of the inner surface of the cover 3100 may be larger than the surface roughness of the outer surface of the cover 3100. This is for sufficiently scattering and diffusing light from the light source part 3200.

The cover 3100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 3100 may be a transparent material that can be seen from the outside of the light source unit 3200 and the member 3350, and may be an invisible and opaque material. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 is disposed on the member 3350 of the heat sink 3300 and may be disposed in a plurality of units. Specifically, the light source portion 3200 may be disposed on at least one of the plurality of side surfaces of the member 3350. The light source unit 3200 may be disposed at the upper end of the member 3350.

The light source portion 3200 may be disposed on three of the six sides of the member 3350. However, the present invention is not limited thereto, and the light source portion 3200 may be disposed on all the sides of the member 3350. The light source unit 3200 may include a substrate 3210 and a light emitting device 3230. The light emitting device 3230 may be disposed on one side of the substrate 3210.

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a printed circuit pattern on an insulator. For example, the substrate 3210 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI > In addition, a COB (Chips On Board) type that can directly bond an unpackaged LED chip on a printed circuit board can be used. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or may be formed of a color whose surface efficiently reflects light, for example, white, silver, or the like. The substrate 3210 may be electrically connected to the circuit unit 3400 housed in the heat discharging body 3300. The substrate 3210 and the circuit portion 3400 may be connected, for example, via a wire. The wire may pass through the heat discharging body 3300 to connect the substrate 3210 and the circuit unit 3400.

The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .

The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.

The heat discharging body 3300 may be coupled to the cover 3100 to dissipate heat from the light source unit 3200. The heat discharging body 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330. A member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. An upper surface 3310 of the heat discharging body 3300 can be engaged with the cover 3100. The upper surface 3310 of the heat discharging body 3300 may have a shape corresponding to the opening 3110 of the cover 3100.

A plurality of radiating fins 3370 may be disposed on the side surface 3330 of the heat discharging body 3300. The radiating fin 3370 may extend outward from the side surface 3330 of the heat discharging body 3300 or may be connected to the side surface 3330. The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipator 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the radiating fin 3370.

The member 3350 may be disposed on the upper surface 3310 of the heat discharging body 3300. The member 3350 may be integral with the top surface 3310 or may be coupled to the top surface 3310. The member 3350 may be a polygonal column. Specifically, the member 3350 may be a hexagonal column. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides. Here, the member 3350 may be a circular column or an elliptic column as well as a polygonal column. When the member 3350 is a circular column or an elliptic column, the substrate 3210 of the light source portion 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six sides of the member 3350. The light source unit 3200 may be disposed on all six sides and the light source unit 3200 may be disposed on some of the six sides. In FIG. 12, the light source unit 3200 is disposed on three sides of six sides.

The substrate 3210 is disposed on a side surface of the member 3350. The side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat discharging body 3300. Accordingly, the upper surface 3310 of the substrate 3210 and the heat discharging body 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to receive the heat generated from the light source 3200 quickly. The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn) Or the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics are advantageous in that they are lighter in weight than metals and have unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the supplied power to the light source unit 3200. The circuit unit 3400 supplies the converted power to the light source unit 3200. The circuit unit 3400 may be disposed on the heat discharging body 3300. Specifically, the circuit unit 3400 may be housed in the inner case 3500 and stored in the heat discharging body 3300 together with the inner case 3500. The circuit portion 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410.

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may be in the shape of an oval or polygonal plate. Such a circuit board 3410 may be one in which a circuit pattern is printed on an insulator.

The circuit board 3410 is electrically connected to the substrate 3210 of the light source unit 3200. The electrical connection between the circuit board 3410 and the substrate 3210 may be connected by wire, for example. The wires may be disposed inside the heat discharging body 3300 to connect the circuit board 3410 and the substrate 3210.

The plurality of components 3430 include, for example, a DC converter for converting AC power supplied from an external power source to DC power, a driving chip for controlling the driving of the light source 3200, An electrostatic discharge (ESD) protection device, and the like.

The inner case 3500 houses the circuit portion 3400 therein. The inner case 3500 may have a receiving portion 3510 for receiving the circuit portion 3400.

The receiving portion 3510 may have a cylindrical shape as an example. The shape of the accommodating portion 3510 may vary depending on the shape of the heat discharging body 3300. The inner case 3500 may be housed in the heat discharging body 3300. The receiving portion 3510 of the inner case 3500 may be received in a receiving portion formed on the lower surface of the heat discharging body 3300.

The inner case 3500 may be coupled to the socket 3600. The inner case 3500 may have a connection portion 3530 that engages with the socket 3600. The connection portion 3530 may have a threaded structure corresponding to the thread groove structure of the socket 3600. The inner case 3500 is nonconductive. Therefore, electrical short circuit between the circuit portion 3400 and the heat discharging body 3300 is prevented. For example, the inner case 3500 may be formed of plastic or resin.

The socket 3600 may be coupled to the inner case 3500. Specifically, the socket 3600 may be engaged with the connection portion 3530 of the inner case 3500. The socket 3600 may have the same structure as a conventional incandescent bulb. The circuit portion 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected via a wire. Accordingly, when external power is applied to the socket 3600, the external power may be transmitted to the circuit unit 3400. The socket 3600 may have a screw groove structure corresponding to the threaded structure of the connection portion 3550.

13, a backlight unit according to the present invention includes a light guide plate 1210, a light emitting module unit 1240 for providing light to the light guide plate 1210, a light guide plate 1210, A bottom cover 1230 for housing the light guide plate 1210, the light emitting module unit 1240 and the reflection member 1220 may be included in the lower portion of the bottom cover 1220. However, the present invention is not limited thereto.

The light guide plate 1210 serves to diffuse light into a surface light source. The light guide plate 1210 may be made of a transparent material such as acrylic resin such as PMMA (polymethyl methacrylate), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. ≪ / RTI >

The light emitting module 1240 provides light to at least one side of the light guide plate 1210 and ultimately acts as a light source of a display device in which the backlight unit is disposed.

The light emitting module 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which the light is emitted is spaced apart from the light guiding plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may receive the light guide plate 1210, the light emitting module 1240, and the reflective member 1220. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as defined by the appended claims. You will understand.

100: light emitting device 110: substrate
120: first conductivity type semiconductor layer 130: active layer
140: barrier layer 142: hole injection enhancement layer
144: Magnesium diffusion preventing layer 150: Second conductive type semiconductor layer

Claims (13)

Board;
A first conductive semiconductor layer formed on the substrate;
An active layer formed on the first conductive semiconductor layer;
A barrier layer including a hole injection enhancement layer formed on the active layer and a magnesium diffusion prevention layer formed on the hole injection enhancement layer; And
And a second conductivity type semiconductor layer formed on the barrier layer. The method according to claim 1,
Wherein the barrier layer has a thickness of 5 nm to 20 nm. The method of claim 2,
Wherein the barrier layer comprises a first barrier layer to a fifth barrier layer. The method according to claim 1,
Wherein the thickness of the hole injection enhancing layer is 1/3 of the thickness of the magnesium diffusion preventing layer. The method according to claim 1,
Wherein the magnesium diffusion prevention layer comprises an InGaN series. The method of claim 5,
And the phosphorus (In) content of the magnesium diffusion prevention layer is 1% to 15%. The method of claim 6,
Wherein the magnesium diffusion preventing layer has a thickness of 0.5 nm to 15 nm. The method according to claim 1,
Wherein the hole injection enhancing layer comprises a GaN series. The method of claim 8,
Wherein the hole injection enhancing layer has a thickness of 0.5 nm to 5 nm. Board;
A first conductive semiconductor layer formed on the substrate;
An active layer formed on the first conductive semiconductor layer;
A magnesium diffusion prevention layer formed on the active layer; And
And a second conductivity type semiconductor layer formed on the magnesium diffusion prevention layer. The method of claim 10,
Wherein the magnesium diffusion prevention layer includes an InGaN series and the phosphorus content of the magnesium diffusion prevention layer is 1% to 15%. The method of claim 11,
Wherein the magnesium diffusion preventing layer has a thickness of 0.5 nm to 15 nm. An illumination system having a light emitting device according to any one of claims 1 to 12.
KR1020120150547A 2012-12-21 2012-12-21 Light emitting device and lighting system having the same KR20140081140A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
KR20140081140A true KR20140081140A (en) 2014-07-01

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