KR20140062945A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- KR20140062945A KR20140062945A KR1020120129276A KR20120129276A KR20140062945A KR 20140062945 A KR20140062945 A KR 20140062945A KR 1020120129276 A KR1020120129276 A KR 1020120129276A KR 20120129276 A KR20120129276 A KR 20120129276A KR 20140062945 A KR20140062945 A KR 20140062945A
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- South Korea
- Prior art keywords
- electrode
- layer
- semiconductor layer
- light emitting
- light
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
The light emitting device according to the embodiment includes a substrate 105; A first conductive semiconductor layer 112 on the substrate 105; An active layer 114 on the first conductive semiconductor layer 112; A second conductive semiconductor layer 116 on the active layer 114; A plurality of through holes (H) penetrating the second conductivity type semiconductor layer (116) and a part of the active layer (114) to expose a part of the first conductivity type semiconductor layer (112); A first insulating layer (151) formed on the second conductive type semiconductor layer; A first pad electrode 141a formed on the first insulating layer 151; A first branched electrode 141b connected to the first pad electrode 141a and formed on the first insulating layer 151; A second branched electrode formed in the through hole H and connected to the first branched electrode 141b and in contact with the first conductive semiconductor layer 112 exposed by the through hole H; And a second electrode 142 on the second conductive type semiconductor layer 116. [
Description
Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
Light Emitting Device is a pn junction diode whose electrical energy is converted into light energy. It can be produced from compound semiconductor such as group III and group V on the periodic table and by controlling the composition ratio of compound semiconductor, It is possible.
When a forward voltage is applied to the light emitting device, electrons in the n-layer and holes in the p-layer are coupled to emit energy corresponding to the band gap energy of the conduction band and the valance band. Is mainly emitted in the form of heat or light, and when emitted in the form of light, becomes a light emitting element.
For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, blue light emitting devices, green light emitting devices, ultraviolet (UV) light emitting devices, and the like using nitride semiconductors have been commercialized and widely used.
The nitride semiconductor light emitting device may be classified into a lateral type light emitting device and a vertical type light emitting device depending on the position of the electrode layer.
A horizontal type light emitting device is formed such that a nitride semiconductor layer is formed on a sapphire substrate and two electrode layers are disposed on the upper side of the nitride semiconductor layer.
Conventional horizontal light emitting devices have a large loss of the active layer because mesa etching proceeds over a large area.
In order to compensate for this, various attempts have been made to secure an active layer widely, but there is a problem such as an increase in a forward voltage (Vf).
Embodiments provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system in which the operating voltage is not increased and reliability and light extraction efficiency are improved.
The light emitting device according to the embodiment includes a
According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the illumination system according to the embodiments, the size of the through hole through which the second branched electrode is formed is made larger than the width of the first branched electrode, It is possible to prevent the operating voltage from rising due to the lowering of the current mill.
In addition, the embodiment includes a first pad electrode and a first reflective layer formed under the first branched electrode, so that a thermally stable material is applied to the first pad electrode regardless of the reflectivity of the material of the first pad electrode and the first branched electrode, It can be adopted as one electrode material and the stability of the device can be achieved and the light emitted by the first reflection layer is reflected to be extracted to the outside to increase the light extraction efficiency.
In addition, according to the embodiment, the power drop, which is a disadvantage of the prior art, can be minimized and the current can be uniformly injected into the active layer as a whole, so that the light efficiency can be increased.
1 is a top view of a light emitting device according to an embodiment.
2 is a projection view of a light emitting device according to an embodiment.
3 is a partial cross-sectional view of a light emitting device according to an embodiment.
4 to 5 are process sectional views of a light emitting device according to an embodiment.
6 is a cross-sectional view of a light emitting device package according to an embodiment.
7 to 9 are views showing a lighting apparatus according to an embodiment.
10 and 11 are views showing another example of the lighting apparatus according to the embodiment.
12 is a perspective view of a backlight unit according to an embodiment;
In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.
(Example)
1 is a top view of a light emitting device according to an embodiment, and FIG. 2 is a projection view of a light emitting device according to an embodiment. 2 is a diagram illustrating a first
3 is a partial cross-sectional view of a light emitting device according to an embodiment, specifically, taken along the line I-I 'in Fig.
The light emitting device according to the embodiment includes a first
Conventional horizontal light emitting devices have a large loss of the active layer because mesa etching proceeds over a large area.
In order to solve this problem, in the embodiment, a chip can be designed so that the active layer is wide.
For example, the embodiment may include a plurality of through holes H that penetrate the second conductivity
The first
The first
The first
The second
The second conductivity
The second
On the other hand, as in the embodiment, there is a fear that the operating voltage (Forward Voltage, Vf) increases due to a high current density at a portion where branch electrodes are locally bonded to the first conductivity
In order to prevent an increase in the operating voltage, in the embodiment, the size of the through hole H in which the second
In the embodiment, the shape of the through hole H may be circular, square, line type or the like. The size of the through hole H may be a diameter in the case of a circle, a length of one side in the case of a quadrangle, But is not limited thereto.
For example, the size of the through hole H in which the second
In addition, in the embodiment, the size of the through hole H in which the second
The conventional technology uses a reflective metal of Al or Ag series to improve the light extraction efficiency. However, these materials are characterized in that physical properties are changed at a relatively high temperature as compared with other metal materials, The physical properties are changed and the electrical characteristics are lowered, which is a major factor for raising the operating voltage Vf.
The embodiment of the present invention includes the
The horizontal cross section of the first
For example, the width of the first
The embodiment may further include a second
In this embodiment, the first
According to the light emitting device according to the embodiment, the power drop, which is a disadvantage of the prior art, can be minimized and the current can be uniformly injected into the active layer as a whole, so that the light efficiency can be increased.
According to an embodiment of the present invention, the size of the through hole H in which the second
The embodiment also includes the
Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS.
First, the
The
At this time, in the embodiment, a buffer layer (not shown) may be formed on the
In addition, the embodiment may form an undoped semiconductor layer (not shown) on the buffer layer, but the embodiment is not limited thereto.
The first
The first
The first
The first
Next, a current diffusion layer (not shown) is formed on the first conductive
Next, in the embodiment, an electron injection layer (not shown) may be formed on the current diffusion layer. The electron injection layer may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element 6.0x10 18 atoms / cm 3 ~ 8.0x10 18 atoms / cm 3. The electron injection layer may be formed to a thickness of about 1000 Å or less, but is not limited thereto.
In addition, the embodiment can form a strain control layer (not shown) on the electron injection layer. For example, a strain control layer formed of In y Al x Ga (1-xy) N (0? X? 1, 0? Y? 1) / GaN or the like can be formed on the electron injection layer.
The strain control layer can effectively alleviate the stress that is caused by the lattice mismatch between the first
Further, as the strain control layer is repeatedly laminated in at least six cycles having compositions such as first In x1 GaN and second In x2 GaN, more electrons are collected at a low energy level of the
Thereafter, the
Electrons injected through the first conductive
The
The well layer / barrier layer of the
In the embodiment, an electron blocking layer (not shown) is formed on the
The electron blocking layer may be formed of a superlattice of Al z Ga (1-z) N / GaN (0? Z ? 1), but is not limited thereto.
The electron blocking layer can efficiently block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency. For example, the electron blocking layer can effectively prevent electrons that are overflowed by ion implantation of Mg in a concentration range of about 10 18 to 10 20 / cm 3 , and increase the hole injection efficiency.
The embodiment may improve the luminous efficiency by forming an electron blocking layer on the
The second
For example, the second
The second conductive
In an embodiment, the first
Thereafter, a first
In the embodiment, the first
For example, the first
The first embodiment includes a
The horizontal section of the first
For example, the width of the first
Next, a light-transmitting
The light-transmitting
For example, the
5, a plurality of through holes (not shown) may be formed in the second conductivity
The embodiment can prevent electrical shorting through the first insulating
The first
The second
The second conductivity
The second
The size of the through hole H in which the second
In the embodiment, the shape of the through hole H may be circular, square, line type or the like. The size of the through hole H may be a diameter in the case of a circle, a length of one side in the case of a quadrangle, But is not limited thereto.
For example, the size of the through hole H in which the second
In addition, in the embodiment, the size of the through hole H in which the second
According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the illumination system according to the embodiments, the size of the through hole through which the second branched electrode is formed is made larger than the width of the first branched electrode, It is possible to prevent the operating voltage from rising due to the lowering of the current mill.
In addition, the embodiment includes a first pad electrode and a first reflective layer formed under the first branched electrode, so that a thermally stable material is applied to the first pad electrode regardless of the reflectivity of the material of the first pad electrode and the first branched electrode, It can be adopted as one electrode material and the stability of the device can be achieved and the light emitted by the first reflection layer is reflected to be extracted to the outside to increase the light extraction efficiency.
In addition, according to the embodiment, the power drop, which is a disadvantage of the prior art, can be minimized and the current can be uniformly injected into the active layer as a whole, so that the light efficiency can be increased.
6 is a view illustrating a light emitting
The light emitting
The
The
The
The
The
The
A light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.
7 to 9 are views showing a lighting apparatus according to an embodiment.
FIG. 7 is a perspective view of the illumination device according to the embodiment viewed from above, FIG. 8 is a perspective view of the illumination device shown in FIG. 7, and FIG. 9 is an exploded perspective view of the illumination device shown in FIG.
7 to 9, the illumination device according to the embodiment includes a
For example, the
The inner surface of the
The
The
The
The surface of the
The
The
The
The
The
The
The
10 and 11 are views showing another example of the lighting apparatus according to the embodiment.
FIG. 10 is a perspective view of a lighting apparatus according to the embodiment, and FIG. 11 is an exploded perspective view of the lighting apparatus shown in FIG.
10 and 11, the lighting device according to the embodiment includes a
The
The
The
The inner surface of the
The
The
11, the
The
In addition, the
The light emitting device 3230 may be a light emitting diode chip that emits red, green, or blue light, or a light emitting diode chip that emits UV light. Here, the light emitting diode chip may be a lateral type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green light. .
The light emitting device 3230 may have a phosphor. The phosphor may be at least one of a garnet system (YAG, TAG), a silicate system, a nitride system, and an oxynitride system. Alternatively, the fluorescent material may be at least one of a yellow fluorescent material, a green fluorescent material, and a red fluorescent material.
The
A plurality of radiating
The
Specifically, the
The
The
The material of the
The
The
The plurality of
The
The
The
12 is an exploded
The
The
The light emitting
The
The
The plurality of light emitting device packages 200 may be mounted on the
The
The
The
According to the light emitting device, the method of manufacturing the light emitting device, the light emitting device package, and the illumination system according to the embodiments, the size of the through hole through which the second branched electrode is formed is made larger than the width of the first branched electrode, It is possible to prevent the operating voltage from rising due to the lowering of the current mill.
In addition, the embodiment includes a first pad electrode and a first reflective layer formed under the first branched electrode, so that a thermally stable material is applied to the first pad electrode regardless of the reflectivity of the material of the first pad electrode and the first branched electrode, It can be adopted as one electrode material and the stability of the device can be achieved and the light emitted by the first reflection layer is reflected to be extracted to the outside to increase the light extraction efficiency.
In addition, according to the embodiment, the power drop, which is a disadvantage of the prior art, can be minimized and the current can be uniformly injected into the active layer as a whole, so that the light efficiency can be increased.
The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.
The
The
A through hole H, a first insulating
The
The second
The first
Claims (10)
A first conductive semiconductor layer on the substrate;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer;
A plurality of through holes penetrating the second conductivity type semiconductor layer and a part of the active layer to expose a part of the first conductivity type semiconductor layer;
A first insulating layer formed on the second conductive semiconductor layer;
A first pad electrode formed on the first insulating layer;
A first branched electrode connected to the first pad electrode and formed on the first insulating layer;
A second branched electrode formed in the through hole and connected to the first branched electrode, the second branched electrode being in contact with the first conductive type semiconductor layer exposed by the through hole; And
And a second electrode on the second conductive semiconductor layer.
And a first reflective layer formed under the first pad electrode and the first branched electrode.
And a second insulating layer formed on a side wall of the through hole,
And the second branched electrode formed on a sidewall of the through hole is formed on the second insulating layer.
The first reflective layer
And a DBR (Distributed Bragg Reflector).
The second branched electrode
Wherein the first conductive semiconductor layer is in direct contact with only the region exposed by the through hole.
The size of the through hole through which the second branched electrode is formed
Wherein the width of the first branched electrode is larger than the width of the first branched electrode.
The size of the through hole through which the second branched electrode is formed
Wherein the width of the first branched electrode is three times or more the width of the first branched electrode.
The size of the through hole through which the second branched electrode is formed
And the size of the light emitting element is not more than half of the upper surface of the light emitting element.
The horizontal cross-section of the first reflective layer may be,
The first branched electrode, the second branched electrode, and the first pad electrode.
And a second reflective layer formed under the second electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020120129276A KR20140062945A (en) | 2012-11-15 | 2012-11-15 | Light emitting device |
Applications Claiming Priority (1)
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KR1020120129276A KR20140062945A (en) | 2012-11-15 | 2012-11-15 | Light emitting device |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150087445A (en) * | 2014-01-20 | 2015-07-30 | 삼성전자주식회사 | Semiconductor light emitting device |
KR20160045397A (en) * | 2014-10-17 | 2016-04-27 | 엘지이노텍 주식회사 | Light emitting device package |
KR101646666B1 (en) * | 2015-03-26 | 2016-08-08 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package including the device, and lighting apparatus including the package |
WO2017052344A1 (en) * | 2015-09-25 | 2017-03-30 | 엘지이노텍 주식회사 | Light-emitting element, light-emitting element package, and light-emitting device |
US9634192B2 (en) | 2014-08-07 | 2017-04-25 | Lg Innotek Co., Ltd. | Light emitting device and lighting system |
KR20180092913A (en) * | 2018-08-06 | 2018-08-20 | 엘지이노텍 주식회사 | Light emitting device package |
KR20190008402A (en) * | 2019-01-15 | 2019-01-23 | 엘지이노텍 주식회사 | Light emitting device package and lighting apparatus |
-
2012
- 2012-11-15 KR KR1020120129276A patent/KR20140062945A/en not_active Application Discontinuation
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150087445A (en) * | 2014-01-20 | 2015-07-30 | 삼성전자주식회사 | Semiconductor light emitting device |
US9634192B2 (en) | 2014-08-07 | 2017-04-25 | Lg Innotek Co., Ltd. | Light emitting device and lighting system |
KR20160045397A (en) * | 2014-10-17 | 2016-04-27 | 엘지이노텍 주식회사 | Light emitting device package |
KR101646666B1 (en) * | 2015-03-26 | 2016-08-08 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package including the device, and lighting apparatus including the package |
WO2016153214A1 (en) * | 2015-03-26 | 2016-09-29 | 엘지이노텍(주) | Light-emitting element and light-emitting element package |
US10418523B2 (en) | 2015-03-26 | 2019-09-17 | Lg Innotek Co., Ltd. | Light-emitting device and light-emitting device package |
WO2017052344A1 (en) * | 2015-09-25 | 2017-03-30 | 엘지이노텍 주식회사 | Light-emitting element, light-emitting element package, and light-emitting device |
CN108140699A (en) * | 2015-09-25 | 2018-06-08 | Lg伊诺特有限公司 | Light-emitting component, light-emitting element package and lighting device |
US10497835B2 (en) | 2015-09-25 | 2019-12-03 | Lg Innotek Co., Ltd. | Light emitting device, light emitting element package, and light emitting device |
CN108140699B (en) * | 2015-09-25 | 2020-09-25 | Lg伊诺特有限公司 | Light emitting device, light emitting element package, and lighting apparatus |
KR20180092913A (en) * | 2018-08-06 | 2018-08-20 | 엘지이노텍 주식회사 | Light emitting device package |
KR20190008402A (en) * | 2019-01-15 | 2019-01-23 | 엘지이노텍 주식회사 | Light emitting device package and lighting apparatus |
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