KR20140039041A - Base material film for semiconductor processing sheet, semiconductor processing sheet, and method for manufacturing semiconductor device - Google Patents

Abstract

The present invention is constituted by a resin layer (A) comprising a resin composition containing a resin density of 0.870 to 0.900 g / cm ³ and a heat flux at a melting peak of 10 to 70 mass% of an olefinic resin having 2.5 W / g or less. A semiconductor processing sheet 1 comprising a base film 2 and an adhesive layer 3 laminated on one side of the base film 2. Such a semiconductor processing sheet 1 has good pick-up performance and can suppress the time-dependent fall of the pick-up performance.

Description

BASE MATERIAL FILM FOR SEMICONDUCTOR PROCESSING SHEET, SEMICONDUCTOR PROCESSING SHEET, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE}

The present invention relates to a semiconductor processing sheet used for processing a semiconductor, for example, dicing and die bonding, a base film used for the semiconductor processing sheet, and a method for manufacturing a semiconductor device using the same.

Semiconductor wafers, such as silicon and gallium arsenide, and various packages (hereinafter, these may be collectively described as a "cut material") are manufactured in a large diameter state, and these are element element pieces (hereinafter referred to as After being separated into pieces (dicing) as "chips" and separately peeled off (pickup), they are transferred to the next step, the mounting step. At this time, the object to be cut such as a semiconductor wafer is provided in each step of dicing, cleaning, drying, exposing, picking up, and mounting in a state of being adhered to the adhesive sheet in advance.

Conventionally, the dicing sheet in which the adhesive layer is formed on a base film as a semiconductor process sheet is used at the process from the dicing process of a to-be-processed object to a pick-up process. Specifically, the to-be-cut material is provided to dicing in the state fixed to the dicing sheet via the adhesive layer, and the chip | tip after dicing is picked up from the adhesive layer of a dicing sheet.

On the other hand, in order to simplify the process of a pick-up process and a mounting process, a dicing die bonding sheet may be used as a semiconductor processing sheet which has a dicing function and a function for adhering a chip | tip simultaneously. When using such a sheet, the to-be-cut material is provided to dicing in the state fixed to the base film through the adhesive bond layer, and the chip | tip after dicing is picked up with an adhesive bond layer from a base film. The adhesive layer attached to the chip is then used to adhere (mount) the chip to a substrate or the like. As such a dicing die bonding sheet, what is disclosed by patent documents 1-3 is mentioned, for example.

In the same dicing die bonding sheet as mentioned above, in order to pick up the chip | tip with an adhesive bond layer, the peelability of a base film and an adhesive bond layer is calculated | required.

Japanese Patent Laid-Open No. 2-32181 Japanese Patent Laid-Open No. 2006-156754 Japanese Patent Application Laid-Open No. 2007-012670

However, in the conventional dicing die bonding sheet, an adhesive bond layer and a base film adhere closely with time, especially when the sheet is stored for a long time, As a result, peelability of a base film and an adhesive bond layer falls, There was a case where the pickup of the chip could not be performed well.

In particular, in recent years, with the miniaturization and thinning of semiconductor devices, thinning of semiconductor chips mounted on the semiconductor devices is also progressing. Therefore, when the peelability of the base film and the adhesive layer is lowered as described above, picking up of chips is difficult. In addition, in some cases, defects such as chip splitting or pulling out occur.

This invention is made | formed in view of the same situation as the above, It aims at providing the base film for semiconductor process sheets and a semiconductor process sheet which have favorable pick-up performance and can suppress the time-dependent fall of the said pick-up performance.

In order to achieve the said objective, 1st this invention is a base film for semiconductor processing sheets which consists of a single layer or a multilayer resin layer, At least 1 layer of the said resin layer has resin density of 0.870-0.900g / cm <^3> , melt | dissolution Provided is a base film for semiconductor processing sheets, comprising a resin layer (A) comprising a resin composition containing 10 to 70 mass% of an olefinic resin having a heat flux at a peak of 2.5 W / g or less (Invention 1). .

Although the semiconductor process sheet which concerns on this invention can be preferably used especially as a dicing die bonding sheet, it is not limited to this. On the other hand, the semiconductor processing sheet which concerns on this invention shall also include what has a separate base material and an adhesive layer for affixing a ring frame. In addition, the "sheet" in this invention shall also include the concept of "tape."

The base film for semiconductor processing sheets which concerns on the said invention (invention 1) is equipped with the resin layer (A) which consists of the said resin composition, and has favorable pick-up performance and can suppress the time-dependent fall of this pick-up performance.

The base film for semiconductor processing sheets which concerns on the said invention (invention 1) consists of two layers of the resin layer (A) and the resin layer (B) which consists of materials other than the said resin composition which comprises the said resin layer (A). May be made (Invention 2).

In the said invention (invention 1, 2), it is preferable that the heat of fusion ((DELTA) H) of the said olefin resin is 85.0 J / g or less (invention 3).

In the said invention (Invention 1-3), it is preferable that the said resin composition which comprises the said resin layer (A) consists of the said olefin resin and olefin resin other than the said olefin resin (Invention 4).

In the said invention (Invention 1-4), it is preferable that the softening temperature of the said resin layer (A) is 90-120 degreeC (invention 5).

In the said invention (Invention 2-5), it is preferable that the said resin layer (B) consists of the resin composition which has an ethylene- (meth) acrylic-acid copolymer as a main component (invention 6).

In the said invention (invention 6), it is preferable that content of (meth) acrylic acid as a structural component in the ethylene- (meth) acrylic acid copolymer of the said resin layer (B) is 5-20 mass% (invention 7).

It is preferable that the base film for semiconductor process sheets which concerns on the said invention (invention 1-7) is used for the said base film of the sheet | seat for semiconductor processing which has a base film and the adhesive bond layer laminated | stacked on the single side | surface of the said base film ( Invention 8).

In the said invention (invention 8), it is preferable that the said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent (invention 9).

 Secondly, the present invention provides a semiconductor processing sheet having the substrate film for semiconductor processing sheet (Invention 1 to 9) and an adhesive layer laminated on one side of the substrate film for semiconductor processing sheet (Invention 10).

In the said invention (invention 10), it is preferable that the said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent (invention 11).

In the said invention (invention 10, 11), it is preferable that the said resin layer (A) in the said base film for semiconductor process sheets is in contact with the said adhesive bond layer (invention 12).

Thirdly, in the present invention, after attaching the semiconductor processing sheet to the semiconductor wafer through the adhesive layer of the semiconductor processing sheet having the substrate film and the adhesive layer laminated on one side of the substrate film, the semiconductor wafer is semiconductor. The process of cutting into a chip | tip, the process of peeling off both at the interface of the said base film for semiconductor processing sheets, and the said adhesive bond layer, and making the chip | tip with the said adhesive bond layer, and the chip | tip with the said adhesive bond layer, the said adhesive bond layer A semiconductor processing sheet for use in a method of manufacturing a semiconductor device comprising a step of adhering to a substrate with a circuit through the substrate, wherein the base film is the substrate film for the semiconductor processing sheet (Inventions 1 to 9), A semiconductor processing sheet is provided (invention 13).

Fourthly, the present invention is a process of cutting the semiconductor wafer into a semiconductor chip after affixing the semiconductor processing sheet (invention 10-12) to the semiconductor wafer through the adhesive layer, and the base film for semiconductor processing sheet; Peeling both at the interface of the adhesive layer to form a chip with the adhesive layer attached thereto, and attaching the chip with the adhesive layer to the substrate with a circuit through the adhesive layer. A semiconductor device manufacturing method is provided (invention 14).

The base film and semiconductor processing sheet for semiconductor process sheets which concern on this invention have favorable pick-up performance, and can suppress the time-dependent fall of the said pick-up performance.

1 is a cross-sectional view of a semiconductor processing sheet according to a first embodiment of the present invention.
2 is a cross-sectional view of a semiconductor processing sheet according to a second embodiment of the present invention.

Hereinafter, an embodiment of the present invention will be described.

[First Embodiment]

1 is an example of sectional drawing of the semiconductor process sheet which concerns on 1st Embodiment of this invention. As shown in FIG. 1, the semiconductor processing sheet 1 according to the present embodiment includes the base film 2 and the adhesive layer 3 laminated on one side (the top surface in FIG. 1) of the base film 2. Equipped. On the other hand, before using the semiconductor processing sheet 1, in order to protect the adhesive bond layer 3, it is preferable to laminate | stack a peelable peeling sheet on the exposed surface (upper surface in FIG. 1) of the adhesive bond layer 3. FIG. This semiconductor processing sheet 1 can take all shapes, such as a tape form and a label form.

The base film 2 in this embodiment consists of a single layer resin layer (A). This resin layer (A) has an resin density of 0.870-0.900 g / cm <^3> , and may be called olefin resin (henceforth "olefin resin (D)") whose heat flow rate in a melting peak is 2.5 W / g or less. It is formed by forming a resin composition containing 10 to 70 mass% of.

Here, the resin density in this specification is made into the value obtained by measuring according to JISK7112. In this specification, the heat flow rate at the melting peak is a value obtained by a differential scanning calorimeter (DSC) (in the test example, manufactured by T-A Instruments, Model No .: Q2000). In this embodiment, the DSC is used to raise the sample from -40 ° C to 250 ° C at a rate of 20 ° C / min, perform rapid cooling to -40 ° C, and again to 250 ° C at a rate of 20 ° C / min. It heated up and hold | maintained at 250 degreeC for 5 minutes, and then cooled down to -40 degreeC at the speed of 20 degreeC / min, and obtained the melting curve which shows a melting peak, From the obtained melting curve, the heat flow in a melting peak and the amount of heat of melting mentioned later (ΔH) is calculated.

By using the base film 2 which consists of the resin layer (A) which formed the resin composition containing the predetermined amount of the olefin resin (D) by which the resin density and heat flux in a melting peak prescribed | regulated as mentioned above were used, semiconductor processing The sheet 1 has a good peelability between the base film 2 and the adhesive bond layer 3, that is, a good pick-up performance, and can suppress the time-dependent fall of the pick-up performance. The reason why such an effect is obtained is not necessarily clear, but it is considered that the crystallinity of the olefin-based resin (D) that defines the density and the heat flow rate at the melting peak contained in the resin composition contributes.

The density of the olefin resin (D) in the present embodiment is 0.870 to 0.900 g / cm ³ as above, preferably 0.890 to 0.900 g / cm ³ , and particularly preferably 0.895 to 0.900 g / cm ^3. to be. The density of the olefin resin (D) is 0.870 g / cm ³ If less than tuck occurs in the resin composition containing the olefinic resin (D), clogging occurs in the hopper portion when the resin composition is formed, or when the formed film is wound and removed, the films are blocked. Back trouble occurs. On the other hand, when the density of an olefin resin (D) exceeds 0.900 g / cm <^3> , the peelability of the base film 2 and the adhesive bond layer 3 will fall with time, and the base film 2 of the adhesive bond layer 3 will fall. The pick-up force for) increases, and the above-mentioned good pick-up performance and its continuity effect are not obtained.

In this embodiment, the heat flow rate in the melting peak of olefin resin (D) is 2.5 W / g or less as mentioned above, Preferably it is 2.3 W / g or less. If the heat flow rate at the melting peak exceeds 2.5 W / g, good pickup performance is not obtained. Moreover, it is preferable that the minimum of the heat flow amount in the melting peak of olefin resin (D) in this embodiment is 1.0 W / g. When the heat flow rate at the melting peak is 1.0 W / g or less, the surface of the resin layer (A) becomes sticky, and when the resin composition is formed and processed, the coating liquid for forming an adhesive layer is applied to the formed base film (2). When forming the adhesive bond layer 3, handling property may fall remarkably.

The reason why the same effect is obtained is not always clear, but if the heat flow rate at the melting peak is 2.5 W / g or less, the molecular weight distribution of the olefin resin (D) is somewhat widened, whereby the crystallinity of the resin layer (A) It is considered that the low molecular weight component is transferred between the adhesive layer 3 and the adhesive layer 3, thereby exhibiting good pick-up performance.

The heat of fusion (ΔH) of the olefin resin (D) in the present embodiment is preferably 85.0 J / g or less, particularly preferably 83.0 J / g or less, further preferably 80.0 J / g or less. . If the amount of heat of fusion (ΔH) of the olefinic resin (D) exceeds 85.0 J / g, there is a concern that good pickup performance may not be obtained. On the other hand, the lower limit of the amount of heat of fusion ΔH is naturally determined by the relationship with the density and the skeleton of each resin, but in theory, it is preferable that it is zero.

As olefin resin (D), the homopolymer or copolymer which superposed | polymerized 1 type (s) or 2 or more types chosen from an olefin monomer whose heat flow rate in a density and melting peak is in the said range is preferable. As an olefin monomer, a C2-C18 olefin monomer, a C3-C18 alpha-olefin monomer, etc. are mentioned. As such an olefin monomer, For example, C2-C8 olefin monomers, such as ethylene, propylene, 2-butene, an octene; Α-olefin monomers such as propylene, 1-butene, 4-methyl-1-pentene, 1-hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, 1-octadecene and the like. have. The olefin resin (D) which is a homopolymer or copolymer of these olefin monomers can be used individually by 1 type or in mixture of 2 or more types.

As said olefin resin (D), the homopolymer or copolymer of ethylene is preferable, and the copolymer of ethylene and an alpha-olefin monomer is more preferable. Examples of the α-olefin monomers include those mentioned above. Also in the said olefin resin (D), the homopolymer or copolymer of ethylene containing 60-100 mass%, especially 70-99.9 mass% of ethylene as a monomeric unit (henceforth "polyethylene" may be called.). desirable.

In the present specification, the density is 0.870 g / cm ³ Or more, 0.910g / cm ³ Less than polyethylene is called ultra low density polyethylene (VLDPE). In this embodiment, it is preferable to select as an olefin resin (D) the density of 0.870-0.900g / cm < ³ > among this ultra low density polyethylene. Such ultra low density polyethylene is easily available as an olefin resin (D) that satisfies the above conditions.

The resin composition which comprises the resin layer (A) contains 8-70 mass% of said olefin resins (D), Preferably it contains 10-65 mass%, Especially preferably, it contains 10-50 mass%. . When content of the said olefin resin (D) is less than 8 mass%, the said favorable pick-up performance and its continuity effect are not acquired. Moreover, when content of the said olefin resin (D) exceeds 70 mass%, the elasticity modulus of the base film 2 obtained will fall, and when a secondary processing etc., a problem arises about handling property. Furthermore, when content of the said olefin resin (D) exceeds 70 mass%, blocking will generate | occur | produce in the base film 2 wound up from the low density of the olefin resin (D), and the surface of the base film 2 There is a possibility that a mark is generated and the handling property in the case of unwinding the base film 2 or the semiconductor processing sheet 1 from the roll or the like deteriorates.

As mentioned above, although the resin layer (A) contains 8-70 mass% of olefin resins (D), as a component other than this olefin resin (D), olefin resins other than olefin resin (D) ( Hereinafter, it may be called "olefin resin (E)." It is preferable to contain).

That is, olefin resin (E) is resin which does not satisfy | fill either or both of the requirements of resin density of 0.870-0.900g / cm <^3> , and the heat flow rate in a melting peak of 2.5W / g or less. As olefin resin (E), they are polyethylene (homopolymer or copolymer of ethylene containing 60-100 mass%, especially 70-99.9 mass% of ethylene as a monomer unit), a propylene butene copolymer, etc., for example. and a density of 0.910g / cm ³ Or more, 0.920g / cm ³ . As a copolymer of ethylene, an ethylene propylene copolymer, an ethylene butene copolymer, etc. are preferable, for example. Among them, polyethylene having a density of 0.915 to 0.918 g / cm ³ (hereinafter, may be referred to as “low density polyethylene”) is more preferable. Olefin resin (E), such as such a low density polyethylene, has the advantage of high compatibility with the said olefin resin (D).

The thickness of the base film 2 is 20-500 micrometers normally, Preferably it is 30-200 micrometers, More preferably, it is 40-150 micrometers.

The base film 2 can be manufactured by a conventional method. For example, the olefin resin (D) and the olefin resin (E) are kneaded, and the pellets are prepared directly or once from the kneaded product, and then extruded. It can form into a film by etc. The temperature for kneading is preferably 180 to 230 캜.

It is preferable that softening temperature is 90-120 degreeC, and, as for the resin composition (in this embodiment, resin layer (A)) which comprises the base film 2, it is especially preferable that it is 100-115 degreeC. When the softening temperature of the resin layer (A) is 90 degreeC or more, blocking of the base film 2 will not occur and the favorable handleability of the base film 2 or the semiconductor process sheet 1 can be ensured. Moreover, when the softening temperature of the resin layer (A) is 120 degreeC or more, in the expand process after dicing, the base film 2 may be necked and there exists a possibility that a chip space may not be extended uniformly.

Here, the softening temperature in this specification is taken as the value obtained by the solidification type flow tester (In the test example, Shimadzu Corporation make, model number: CFT-100D). Specifically, the temperature at which the change began to occur in the stroke is defined as a softening temperature when measured at a temperature increase rate of 10 degrees / minute using a die having a load of 9.81 N and a hole having a diameter of 2.0 mm and a length of 5.0 mm. do.

As a material which comprises the adhesive bond layer 3, if it has a wafer fixing function and a die bonding function, it can use without a restriction | limiting in particular. As a material which comprises such an adhesive bond layer 3, what consists of a thermoplastic resin and a low molecular weight thermosetting adhesive component, the thing which consists of a thermosetting adhesive component of B stage (semi-cured state), etc. can be used. Examples of the thermoplastic resin include acrylic polymers, polyester resins, urethane resins, phenoxy resins, polybutenes, polybutadienes, polyvinyl chlorides, polyethylene terephthalates, polybutylene terephthalates, ethylene (meth) acrylic acid copolymers, and ethylene (meth). Acrylic ester copolymer, polystyrene, polycarbonate, polyimide, etc. are mentioned, Especially, an acrylic polymer is preferable from a viewpoint of adhesiveness and film forming property (sheet formability). As the thermosetting adhesive component, epoxy resin, polyimide resin, phenol resin, silicone resin, cyanate resin, bismaleimide triazine resin, allylated polyphenylene ether resin (thermosetting PPE), formaldehyde resin, Unsaturated polyester, these copolymers, etc. are mentioned, Especially, an epoxy resin is preferable from an adhesive viewpoint. Especially as a material which comprises the adhesive bond layer 3, the material containing an acrylic polymer (a), an epoxy resin (b), and a hardening | curing agent (c) is preferable.

There is no restriction | limiting in particular as acrylic polymer (a), A conventionally well-known acrylic polymer can be used. It is preferable that it is 10,000-2 million, and, as for the weight average molecular weight (Mw) of an acrylic polymer (a), it is more preferable that it is 100,000-1,500,000. When Mw of an acrylic polymer (a) is too low, peelability of the adhesive bond layer 3 and the base film 2 may fall, and the pick-up defect of a chip | tip may arise. If Mw of an acrylic polymer (a) is too high, the adhesive bond layer 3 may not be able to follow the unevenness | corrugation of a to-be-adhered body, and it may become a generation factor, such as a void. In addition, the weight average molecular weight (Mw) in this specification is polystyrene conversion value measured by the gel permeation chromatography (GPC) method.

It is preferable that it is -60-70 degreeC, and, as for the glass potential temperature (Tg) of an acrylic polymer (a), it is more preferable that it is -30-50 degreeC. When the Tg of the acrylic polymer (a) is too low, the peelability of the adhesive layer 3 and the base film 2 is lowered, so that pick-up failure of the chip may occur. If the Tg of the acrylic polymer (a) is too high, there is a fear that the adhesive force for fixing the wafer becomes insufficient.

As a monomer which comprises an acrylic polymer (a), the (meth) acrylic acid ester monomer or its derivative (s) is mentioned, More specifically, for example, methyl (meth) acrylate, ethyl (meth) acrylate, and (meth) acrylic acid (Meth) acrylic acid alkyl esters having 1 to 18 carbon atoms in alkyl groups such as propyl and butyl acrylate; (Meth) acrylic acid cycloalkyl esters, (meth) acrylic acid benzyl esters, isobornyl (meth) acrylates, dicyclopentanyl (meth) acrylates, dicyclopentenyl (meth) acrylates, dicyclopentenyloxyethyl (meth) (Meth) acrylic acid esters having a cyclic skeleton such as acrylate and imide (meth) acrylate; Hydroxyl group-containing (meth) acrylic acid esters such as hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, and 2-hydroxypropyl (meth) acrylate; Glycidyl acrylate, glycidyl methacrylate, and the like. Moreover, you may use the unsaturated monomer containing carboxy groups, such as acrylic acid, methacrylic acid, and itaconic acid. These may be used individually by 1 type and may use 2 or more types together.

As a monomer which comprises an acrylic polymer (a), in the above, it is preferable to use a hydroxyl group containing (meth) acrylic acid ester at least from a compatible viewpoint with an epoxy resin (b). In this case, in the acrylic polymer (a), the structural unit derived from the hydroxyl group-containing (meth) acrylic acid ester is preferably included in the range of 1 to 20% by mass, more preferably in the range of 3 to 15% by mass. desirable. As an acrylic polymer (a), the copolymer of (meth) acrylic-acid alkylester and hydroxyl-containing (meth) acrylic acid ester is preferable specifically ,.

In addition, the acrylic polymer (a) may copolymerize monomers, such as vinyl acetate, an acrylonitrile, styrene, in the range which does not impair the objective of this invention.

As the epoxy resin (b), various conventionally known epoxy resins can be used. Examples of the epoxy resin include bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenylene skeletal type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, dicyclopentadiene (DCPD) type epoxy resins, and biphenyls. Epoxy resins containing two or more functional groups in structural units, such as epoxy resins, triphenol methane epoxy resins, heterocyclic epoxy resins, stilbene epoxy resins, condensed cyclic aromatic hydrocarbon-modified epoxy resins and these halides Can be. This epoxy resin may be used individually by 1 type, and may use two or more types together.

Although the epoxy equivalent of an epoxy resin is not specifically limited, It is preferable that it is 150-1000 (g / eq). In addition, an epoxy equivalent is a value measured according to JISK7236: 2008.

1-1500 mass parts is preferable with respect to 100 mass parts of acrylic polymers (a), and, as for content of epoxy resin (b), 3-1000 mass parts is more preferable. When content of an epoxy resin (b) is less than the said range, sufficient adhesive force may not be obtained. When content of an epoxy resin (b) exceeds the said range, film formability will fall and an adhesive bond layer 3 ) May be difficult to form.

The hardening | curing agent (c) functions as a hardening | curing agent with respect to epoxy resin (b). As a hardening | curing agent (c), the compound which has two or more functional groups which can react with an epoxy group is mentioned in a molecule | numerator, As this functional group, a phenolic hydroxyl group, alcoholic hydroxyl group, an amino group, a carboxy group, anhydrous carbonate group, etc. are mentioned. have. In these, a phenolic hydroxyl group, an amino group, and anhydrous carbonate group are preferable, and a phenolic hydroxyl group and an amino group are more preferable.

As a specific example of a hardening | curing agent (c), Phenolic thermosetting agents, such as a novolak-type phenol resin, a dicyclopentadiene type phenol resin, a triphenol methane type phenol resin, an aralkyl phenol resin; Amine type, such as DICY (dicyandiamide) And a thermosetting agent. A hardening | curing agent (c) may be used individually by 1 type, and may use 2 or more types together.

0.1-500 mass parts is preferable with respect to 100 mass parts of epoxy resins (b), and, as for content of a hardening | curing agent (c), 1-200 mass parts is more preferable. When content of a hardening | curing agent (c) is less than the said range, the adhesive bond layer 3 which has sufficient adhesive force may not be obtained. When content of a hardening | curing agent (c) exceeds the said range, the moisture absorption of the adhesive bond layer 3 may become high, and the reliability of a semiconductor package may fall.

Materials other than the above (adhesive composition) constituting the adhesive layer 3 may be, if desired, a curing accelerator, a coupling agent, a crosslinking agent, an energy ray polymerizable compound, a photoinitiator, a plasticizer, an antistatic agent, an antioxidant, a pigment, a dye, Various additives, such as an inorganic filler, may be contained. Each of these additives may be included individually by 1 type, and may be included in combination of 2 or more type.

A hardening accelerator is used in order to adjust the hardening rate of an adhesive composition. As a hardening accelerator, the compound which can accelerate | stimulate reaction with an epoxy group and phenolic hydroxyl group, an amine, etc. is preferable. Specific examples of such compounds include imidazoles such as tertiary amines, 2-phenyl-4 and 5-di (hydroxymethyl) imidazole, organic phosphines, tetraphenylborone salts and the like.

The coupling agent has a function of improving adhesion and adhesion to the adherend of the adhesive composition. Moreover, the water resistance of the said hardened | cured material can be improved by using a coupling agent, without impairing the heat resistance of the hardened | cured material obtained by hardening | curing an adhesive composition. It is preferable that a coupling agent is a compound which has group reacting with the functional group which the said acrylic polymer (a) and epoxy resin (b) have. As such a coupling agent, a silane coupling agent is preferable. There is no restriction | limiting in particular as a silane coupling agent, A well-known thing can be used.

The crosslinking agent is for adjusting the cohesion force of the adhesive layer 3. As a crosslinking agent of the said acrylic polymer (a), it can use without a restriction | limiting especially, For example, an organic polyvalent isocyanate compound, an organic polyvalent imine compound, etc. are mentioned.

The energy ray polymerizable compound is a compound which is polymerized and cured when irradiated with energy rays such as ultraviolet rays and electron beams. By hardening an energy ray polymeric compound by energy ray irradiation, since peelability of the adhesive bond layer 3 and the base film 2 improves, pick-up becomes easy.

As the energy ray polymerizable compound, an acrylate compound is preferable, and one having at least one polymerizable double bond in the molecule is particularly preferable. As such an acrylate type compound, a dicyclopentadiene dimethoxy diacrylate, a trimethol propane triacrylate, a pentaerythritol triacrylate, a pentaerythritol tetraacrylate, and a dipentaerythritol monohydroxy penta specifically, Acrylate, dipentaerythritol hexaacrylate, 1, 4-butylene glycol diacrylate, 1, 6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy Modified acrylate, polyether acrylate, itaconic acid oligomer, etc. are mentioned.

The weight average molecular weight of an acrylate compound is 100-30000 normally, Preferably it is about 300-10000.

When an adhesive composition contains an energy beam polymeric compound, content of an energy beam polymeric compound is 1-400 mass parts normally with respect to 100 mass parts of acrylic polymer (a), Preferably it is 3-300 mass parts, More Preferably it is 10-200 mass parts.

In the case where the adhesive layer 3 contains the energy ray-polymerizable compound, the photoinitiator is capable of reducing the polymerization curing time and the irradiation dose of energy ray on the occasion of polymerizing and curing by irradiation of energy ray. As a photoinitiator, a well-known thing can be used.

The thickness of the adhesive bond layer 3 is 3-100 micrometers normally, Preferably it is about 5-80 micrometers.

The semiconductor processing sheet 1 similar to the above can be manufactured by a conventional method. For example, the material which comprises the adhesive bond layer 3, and the coating agent which further contains a solvent as needed are manufactured, and a roll coater, a knife coater, a roll knife coater, an air knife coater, a die coater, a bar coater, and a gravure coater It can manufacture by apply | coating to the single side | surface of the base film 2 with coating machines, such as a curtain coater, and drying, and forming the adhesive bond layer 3. FIG. Or after apply | coating the said coating agent to the peeling surface of a desired peeling sheet, and forming an adhesive bond layer 3, it can also manufacture by crimping | bonding the base film 2 to the adhesive bond layer 3.

In the above semiconductor processing sheet 1, while having good peelability, ie, good pick-up performance, between the base film 2 and the adhesive bond layer 3, the time-dependent fall of this pick-up performance is suppressed.

The semiconductor processing sheet 1 which concerns on this embodiment can be used suitably as a dicing die bonding sheet used for a dicing process and a die bonding process.

[Second embodiment]

2 is a cross-sectional view of the semiconductor processing sheet 10 according to the second embodiment of the present invention.

As shown in FIG. 2, the semiconductor processing sheet 10 which concerns on this embodiment is laminated | stacked on the base film 20 which consists of two resin layers, and the single side | surface (upper surface in FIG. 2) of the base film 20. As shown in FIG. The adhesive layer 3 is provided.

The base film 20 in this embodiment is comprised from the resin layer (A) located in the side which contact | connects the adhesive bond layer 3, and the resin layer (B) located in the side which does not contact the adhesive bond layer (3). do. The resin layer A is made of the same material as the resin layer A in the semiconductor processing sheet 1 according to the first embodiment. However, it is preferable that the thickness of the resin layer (A) in this embodiment is 10-120 micrometers, It is more preferable that it is 20-100 micrometers, It is especially preferable that it is 30-80 micrometers.

The resin layer (B) in this embodiment is for giving expand performance to the base film 20. In other words, the base film 20 composed of the resin layer (A) and the resin layer (B) has good pick-up performance and is also excellent in expandability.

The resin layer (B) may be made of resin excellent in extensibility, and is not particularly limited. As such resin, the copolymer which superposed | polymerized 1 type (s) or 2 or more types chosen from an olefin monomer and an acryl-type monomer is mentioned, for example.

It is preferable that especially the resin layer (B) consists of the resin composition which has a ethylene- (meth) acrylic-acid copolymer excellent in extensibility as a main component. In particular, the ethylene component in the ethylene- (meth) acrylic acid copolymer gives good extensibility and expandability to the resin layer (B). The ethylene- (meth) acrylic acid copolymer may be an ethylene-acrylic acid copolymer, an ethylene-methacrylic acid copolymer, or an ethylene-acrylic acid-methacrylic acid copolymer.

It is preferable that (meth) acrylic acid content as a structural component in the said ethylene- (meth) acrylic acid copolymer is 3-20 mass%, It is more preferable that it is 4-15 mass%, It is especially that it is 5-12 mass% desirable. When the content of (meth) acrylic acid in the ethylene- (meth) acrylic acid copolymer is less than 3% by mass, the crystallinity of the resin layer (B) becomes high, and the base film 20 is necked at the time of expansion after dicing. The chip spacing may be difficult to uniformly expand. On the other hand, if the content of (meth) acrylic acid exceeds 20% by mass, sticking may occur in the resin layer (B) itself, and when the dicing is performed using an apparatus, the semiconductor processing sheet 10 There is a fear that the product cannot be returned.

In the ethylene- (meth) acrylic acid copolymer, portions other than the structural units derived from acrylic acid and / or methacrylic acid are basically structural units derived from ethylene, but according to the semiconductor processing sheet 10 according to the present embodiment As an olefin monomer other than ethylene, as an olefin monomer other than ethylene, and an acryl-type monomer other than (meth) acrylic acid, methyl (meth) acrylic acid ester, ethyl (meth) acrylic acid ester, and alkyl vinyl ester in the range which does not impair the objective of the The structural unit derived from etc. may be included. The structural unit guide | induced from monomers other than these may be contained in the said ethylene- (meth) acrylic acid copolymer in the ratio of less than 10 mass%.

There is no restriction | limiting in particular about the copolymerization form of ethylene- (meth) acrylic-acid copolymer, Any of a random, a block, and a graft copolymer may be sufficient. Moreover, it is preferable that it is 10,000-1,000,000, and, as for the molecular weight of an ethylene- (meth) acrylic acid copolymer in a weight average molecular weight (Mw), it is especially preferable that it is 50,000-500,000.

The main component of the resin composition constituting the resin layer (B) may be one kind of ethylene- (meth) acrylic acid copolymer, or may be a mixture of two or more kinds of ethylene- (meth) acrylic acid copolymers.

The resin composition constituting the resin layer (B) is, in addition to the ethylene- (meth) acrylic acid copolymer, ethylene-butyl acrylate and ethylene in a range that does not impair the purpose of the semiconductor processing sheet 10 according to the present embodiment. -Vinyl acetate, ethylene-propylene copolymer, ethylene-butene copolymer, or the like. It is preferable that content of this resin is 30 mass% or less in the said resin composition, and it is especially preferable that it is 10 mass% or less.

In addition, a resin layer (B) is not limited to said material, For example, Polyolefin, such as polyethylene, a polypropylene, polyethylene butene; Ethylene copolymers such as ethylene-vinyl acetate copolymer and ethylene- (meth) acrylic acid ester; Polyesters such as polyethylene terephthalate and polyethylene naphthalate; Polyurethane; Polyvinyl chloride; It may consist of polyamide or the like. When the resin layer (B) consists of these materials, the handling property of the base film 2 or the semiconductor process sheet 10 can be improved.

It is preferable that it is 40-120 micrometers, and, as for the thickness of a resin layer (B), it is especially preferable that it is 50-100 micrometers. In addition, the thickness of the resin layer (B) is more preferably thicker than the thickness of the resin layer (A). When the thickness of the resin layer (B) is in the above range, good expand performance can be imparted to the base film 20.

The base film 20 may be produced by simultaneously forming a resin layer (A) and a resin layer (B) by coextrusion or the like, and laminating them, and after forming each of the resin layers (A) and (B), You may manufacture these by laminating | stacking a resin layer (A) and a resin layer (B) with an adhesive agent.

It is preferable that the breaking elongation of the base film 20 in this embodiment is 100% or more, and it is especially preferable that it is 200% or more. The base film 20 having an elongation at break of 100% or more does not break at the time of the expansion process, and easily cuts the chips formed by cutting the cut object.

Moreover, it is preferable that the tensile modulus of the base film 20 in this embodiment is 80-160 MPa. When the tensile modulus of elasticity is less than 80 MPa, when the wafer is attached to the semiconductor processing sheet 10 and fixed to the ring frame, the base film 20 is soft, so that sagging occurs, which may cause a conveyance error. On the other hand, if the tensile modulus exceeds 160 MPa, the load applied during the expansion process must be increased, which may cause problems such as peeling off of the semiconductor processing sheet 10 itself from the ring frame.

In the above semiconductor processing sheet 10, by providing the resin layer (A), it has good peelability between the base film 20 and the adhesive bond layer 3, that is, good pick-up performance, and also of the pick-up performance. Deterioration with time is suppressed. In addition, since the base film 20 consists of a resin layer (A) and a resin layer (B) as mentioned above, the semiconductor processing sheet 10 which concerns on this embodiment will have favorable expandability.

The semiconductor processing sheet 10 which concerns on this embodiment can be used suitably as a dicing die bonding sheet used for a dicing process, an expansion process, and a die bonding process.

The embodiments described above are described for the purpose of facilitating understanding of the present invention and are not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design modifications and equivalents falling within the technical scope of the present invention.

For example, the base films 2 and 20 may consist of three or more resin layers. In this case, the resin layer which contacts the adhesive bond layer 3 consists of the same material as the resin layer (A).

Hereinafter, the present invention will be described in more detail with reference to Examples and the like, but the scope of the present invention is not limited to these Examples and the like.

[Example 1]

As the olefin resin (D), 10 masses of ultra-low density polyethylene (made by Sumitomo Chemical Co., Ltd., exelene EUL731, density: 0.895 g / cm ³ , heat flow rate at melting peak: 1.4 W / g, melting heat: 69.5 J / g) As the olefin resin (E), low-density polyethylene (manufactured by Sumitomo Chemical Co., Ltd., Sumikasen L705, density 0.918 g / cm ³ , heat flux at the melting peak: 5.5 W / g, heat of fusion (ΔH): 126.0J / g) 90 parts by mass was melt kneaded in a twin screw kneader (manufactured by Toyo Seiki Seisakusho, Labo Plast Mill) to obtain a raw material for extrusion for the resin layer (A).

Furthermore, as a raw material for extrusion for the resin layer (B), the resin composition (Mitsui Dupont Polychemical Co., Ltd., Nukrel N0903HC, meta acrylic acid content: 9.0 mass%) which has the ethylene-methacrylic acid copolymer as a main component was prepared.

Next, the raw material for extrusion for the resin layer (A) and the raw material for extrusion for the resin layer (B) are extruded and formed by a small T-die extruder (manufactured by Toyo Seiki Seisaku Co., Ltd., Labo Plast Mill). The base film of the two-layered structure which consists of a 40 micrometers resin layer (A) and a 60 micrometers resin layer (B) was obtained.

In addition, the following component was mix | blended and the coating liquid for adhesive bond layer formation was adjusted. In addition, the numerical value (mass%) of each component shows the mass% of solid content conversion, and solid content means all the components other than a solvent in this specification.

ACRYLIC POLYMER (A)

Acrylic copolymer mainly composed of n-butyl acrylate (manufactured by Nippon Kosei Chemical Co., Ltd., product name "Coponyl N235--6", MV: approximately 900,000, solid content concentration 34% by mass): 14% by mass

Epoxy watch resin

Bisphenol A epoxy resin (manufactured by Mitsubishi Chemical Co., Ltd., product name "EVR2", epoxy equivalent weight of 1 g / er): 1 mass%

DCP type epoxy resin (manufactured by Dainippon Ink & Chemicals Co., Ltd., product name "EPCICONHPHP-7200HH", epoxy equivalent weight of 260-300 g / E, softening point 750-0 0C): 55% by mass

Curing Agent (c)

Dicyandiamide (manufactured by Asahi Denka Co., Ltd., product name "ADECA HARDNER 363 AS": 1.6% by mass)

[Hardening accelerator]

2-phenyl-4,5-di (hydroxymethyl) imidazole (manufactured by Shikoku Chemical Co., Ltd., product name "Cursol 2PHH"): 1.5 mass%

[Silane coupling agent]

Silicate compound (γ Mitsubishi Chemical Co., Ltd. make, product name "MCC Siiketo MSEP2") which added γ- glycidoxy propyl trimethoxysilane: 0.5 mass%

[Energy-ray polymerizable compound]

Dicyclopentadiene dimethoxy diacrylate (manufactured by Nippon Kayaku Co., Ltd., product name "Karaya R6 64"): ９．1 mass%

[Photoinitiator]

Α-hydroxycyclohexyl phenyl ketone (manufactured by Chiba Specialty Chemicals Co., Ltd., product name "Vayl Cure 14.4"): 0.3% by mass

The obtained coating liquid for adhesive layer formation was apply | coated so that the coating film after drying might be set to 20 micrometers on the surface of the said resin layer (A), it dried at 100 degreeC for 1 minute, the contact layer was formed, and the semiconductor process sheet was produced.

[Example 2]

In Example 1, it is the same as that of Example 1 except having changed the compounding quantity of olefin resin (D) in the raw material for extrusion of a resin layer (A) into 30 mass parts, and the compounding quantity of olefin resin (E) to 70 mass parts. A semiconductor processing sheet was prepared.

[Example 3]

In Example 1, it is the same as that of Example 1 except having changed the compounding quantity of the olefin resin (D) in the raw material for extrusion of a resin layer (A) into 50 mass parts, and the compounding quantity of an olefin resin (E) to 50 mass parts. A semiconductor processing sheet was prepared.

[Example 4]

In Example 3, the olefin resin (D) in the raw material for extrusion was subjected to ultra low density polyethylene (manufactured by Sumitomo Chemical Co., Ltd., Excellence VL-200, density 0.900 g / cm ³ , heat flow rate at melting peak: 2.0 W / g, A semiconductor processed sheet was produced in the same manner as in Example 3 except that the heat of fusion (ΔH) was 79.1 J / g).

[Example 5]

Example 2 WHEREIN: Except changing the raw material for extrusion of the resin layer (B) into ethylene-methacrylic acid copolymer (made by Mitsui Dupont Polychemical, Nucrel AN4225C, methacrylic acid content: 5.0 mass%), In the same manner as in Example 2, a semiconductor processing sheet was manufactured.

[Example 6]

Example 2 WHEREIN: Except changing the raw material for extrusion of the resin layer (B) into ethylene-methacrylic acid copolymer (made by Mitsui Dupont Polychemistry, Nukrel N1207C, methacrylic acid content: 12.0 mass%). In the same manner as in Example 2, a semiconductor processing sheet was manufactured.

[Example 7]

In Example 1, it is the same as that of Example 1 except having changed the compounding quantity of the olefin resin (D) in the raw material for extrusion of a resin layer (A) into 60 mass parts, and the compounding quantity of an olefin resin (E) to 40 mass parts. A semiconductor processing sheet was prepared.

[Example 8]

Example 2 WHEREIN: Except changing the raw material for extrusion of the resin layer (B) into ethylene-methacrylic acid copolymer (made by Mitsui Dupont Polychemistry, Nucrel AN4214C, methacrylic acid content: 4.0 mass%). In the same manner as in Example 2, a semiconductor processing sheet was manufactured.

EXAMPLE 9

Example 2 WHEREIN: Except changing the raw material for extrusion of the resin layer (B) into ethylene-methacrylic acid copolymer (made by Mitsui Dupont Polychemistry, Nucrel N1525, methacrylic acid content: 15.0 mass%). In the same manner as in Example 2, a semiconductor processing sheet was manufactured.

EXAMPLE 10

In Example 2, a base film having a thickness of 100 μm was formed only from the resin layer (A) single layer without extruding the resin layer (B), and then an adhesive layer was formed on the base film in the same manner as in Example 1 , A semiconductor processing sheet was prepared.

[Comparative Example 1]

In Example 1, it is the same as that of Example 1 except having changed the compounding quantity of olefin resin (D) in the raw material for extrusion of a resin layer (A) into 0 mass part, and the compounding quantity of olefin resin (E) to 100 mass parts. A semiconductor processing sheet was prepared.

[Comparative Example 2]

In Example 1, it is the same as that of Example 1 except having changed the compounding quantity of the olefin resin (D) in the raw material for extrusion of a resin layer (A) into 5 mass parts and the compounding quantity of an olefin resin (E) to 95 mass parts. A semiconductor processing sheet was prepared.

[Comparative Example 3]

In Example 2, as the olefin resin (D), ultra low density polyethylene (manufactured by Tosoh Corporation, Lumichin 43-1, density 0.905 g / cm3, heat flow rate at melting peak: 2.4 W / g, heat of fusion (ΔH)) A semiconductor processed sheet was produced in the same manner as in Example 2, except that 88.9 J / g) was used.

[Comparative Example 4]

In Example 2, as the olefin resin (D), ultra low density polyethylene (manufactured by Prime Polymer, Evory SP90100, density 0.890 g / cm ³ , heat flux at the melting peak: 2.8 W / g, heat of fusion (ΔH) 87.8 A semiconductor processed sheet was produced in the same manner as in Example 2 except that J / g) was used.

[Comparative Example 5]

In the comparative example 1, the raw material for extrusion of the resin layer (B) is compared except having changed into the ethylene-methacrylic acid copolymer (made by Mitsui Dupont Polychemical, Nucrel N4214C, methacrylic acid content: 4.0 mass%). In the same manner as in Example 1, a semiconductor processing sheet was manufactured.

[Test Example 1] (Evaluation of pickup performance)

The semiconductor processing sheet manufactured by the Example and the comparative example was cut | disconnected by 25 mm x 250 mm, and the test piece was produced. This test piece was affixed on the grinding surface of # 2000 silicon wafer (200 mm diameter, 350 micrometers in thickness), and both were crimped | bonded by reciprocating 1 kg of rubber rolls. After being left for 20 minutes or more under conditions of 23 ° C. and 50% RH in this state, 180 ° peeling was performed at a rate of 300 mm / min using an all-purpose tensile tester (manufactured by Orientec Co., Ltd.), and an adhesive layer and The peeling force between base films was measured, and the value was made into (initial value: f1 (mN / 25mm)).

On the other hand, after heating the semiconductor processed sheet for 24 hours under 40 degreeC conditions (40 degreeC thermostat bath), it returns to room temperature and the peeling force between an adhesive bond layer and a base film is measured by the same method as the above, and the value ( The value after acceleration: f2 (mN / 25mm) was set. Both of these values were introduced into the following equation, and the rate of change of peeling force: R (%) was calculated. The pick-up performance was set as ○ if R was 50% or less, Δ if R was more than 50%, 100% or less, and × if R was more than 100%. The results are shown in Table 1.

R = (f2 - f1) x100 / f1

[Test Example 2] (Softening Temperature Measurement Test)

The softening temperature was measured with respect to the raw material for extrusion for the resin layer (A) melt-kneaded in the twin-screw kneader mentioned in Example 1 (manufactured by Toyo Seiki Seisakusho, Labo Plast Mill). Specifically, using a solid flow tester (manufactured by Shimadzu Corporation, Model No .: CFT-100D), a die having a hole shape of φ 2.0 mm and a length of 5.0 mm was used, and the sample amount was 4 g, the load was 9.81 N, and the temperature increase rate. The measurement was performed under the condition of 10 deg. The results are shown in Table 1.

[Test Example 3] (Expandability Test)

After attaching the 6-inch wafer to the adhesive layer of the semiconductor processing sheet prepared in Examples and Comparative Examples, the semiconductor processing sheet was mounted on a flat frame, and the wafer was pulled with a 5 mm square chip by a 20 μm thick diamond blade. Cut. Then, using an expanding jig (die bonder CSP-100VX manufactured by NEC Machinery Co., Ltd.), the semiconductor processed sheet was pulled down by 10 mm at a speed of 300 mm / min. The expansion state of the whole wafer at this time was visually confirmed. As a result, it is possible to expand without a problem, and when the chips are uniformly arranged as a whole, the expansion is possible, but when there are chips and uneven portions, and when the semiconductor processing sheet is broken at the time of expansion. Was determined as x. The results are shown in Table 1.

[Test Example 4] (Handling property evaluation)

The base film prepared in the Example and the comparative example was wound up by 100m in the plastic pipe of 3 inch diameter and 330mm width, and the evaluation sample was produced. After storing this sample for 1 week in 40 degreeC atmosphere, the state when rewinding was performed was evaluated based on the following reference | standard. The results are shown in Table 1.

(Circle): It can unwind without resistance.

(Triangle | delta): Although it can unwind, a blocking generate | occur | produces partially and a mark remains on the sheet surface.

X: Blocking generate | occur | produces partially or entirely and cannot unwind.

As can be seen from Table 1, in the semiconductor processing sheets of Examples 1 to 10 in which the resin layer (A) satisfies the requirements of the present invention, good pickup performance was maintained even after promotion. Moreover, it was confirmed that the semiconductor processing sheets of Examples 1-9 which consist of two layers of the resin layer (A) and the resin layer (B) which satisfy | fill the requirements of this invention are excellent also in expandability in addition to pick-up property. Furthermore, content of olefin resin (D) in a resin layer (A) is 10-50 mass%, and methacrylic acid content in the ethylene-methacrylic acid copolymer in a resin layer (B) is 5.0-12.0 mass%. In addition to pick-up property, it was confirmed that the semiconductor processing sheets of Examples 1-6 which are the phosphorus Examples 1-6 were especially excellent in both handling property and expandability.

On the other hand, in the semiconductor processing sheet of the comparative example in which the resin layer (A) did not satisfy the requirements of the present invention, the pick-up force was increased after acceleration, and good pickup performance was not obtained.

The base film and semiconductor processing sheet for semiconductor process sheets which concern on this invention are especially suitable for using for a dicing die bonding sheet.

1, 10... Semiconductor Processing Sheet
2, 20... Base film
3 ... Adhesive layer

Claims (14)

As a base film for semiconductor processing sheets which consists of a single layer or a multilayer resin layer,
At least one layer of the resin layer is a resin layer composed of a resin composition having a resin density of 0.870 to 0.900 g / cm ³ and a heat composition of 10 to 70 mass% of an olefin resin having a heat flux of 2.5 W / g or less at a melting peak. (A) The base film for semiconductor processing sheets characterized by the above-mentioned. The method according to claim 1,
The resin layer (A),
The base film for semiconductor process sheets characterized by consisting of two layers of the resin layer (B) which consists of materials other than the said resin composition which comprises the said resin layer (A). The method according to claim 1 or 2,
The heat of fusion (ΔH) of the olefin resin is 85.0 J / g or less, the base film for semiconductor processing sheets. 4. The method according to any one of claims 1 to 3,
The said resin composition which comprises the said resin layer (A) consists of the said olefin resin and olefin resin other than the said olefin resin, The base film for semiconductor process sheets characterized by the above-mentioned. 5. The method according to any one of claims 1 to 4,
The softening temperature of the said resin layer (A) is 90-120 degreeC, The base film for semiconductor process sheets characterized by the above-mentioned. 6. The method according to any one of claims 2 to 5,
The said resin layer (B) consists of a resin composition which has an ethylene- (meth) acrylic-acid copolymer as a main component, The base film for semiconductor process sheets characterized by the above-mentioned. The method of claim 6,
Content of the (meth) acrylic acid as a structural component in the ethylene- (meth) acrylic acid copolymer of the said resin layer (B) is 5-20 mass%, The base film for semiconductor process sheets characterized by the above-mentioned. The method according to any one of claims 1 to 7,
A base film for semiconductor processing sheets, comprising a base film and an adhesive layer laminated on one side of the base film, used for the base film. The method of claim 8,
The said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent, The base film for semiconductor process sheets characterized by the above-mentioned. The base film for semiconductor processing sheets of any one of Claims 1-9,
A semiconductor processing sheet having an adhesive layer laminated on one side of the substrate film for semiconductor processing sheet. The method of claim 10,
The said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent. 12. The method according to claim 10 or 11,
The said resin layer (A) in the said base film for semiconductor process sheets is in contact with the said adhesive bond layer, The semiconductor process sheet characterized by the above-mentioned. Attaching the semiconductor processing sheet to a semiconductor wafer through the adhesive layer of the semiconductor processing sheet having a substrate film and an adhesive layer laminated on one side of the substrate film, and then cutting the semiconductor wafer into a semiconductor chip; ,
Peeling both at the interface between the substrate film for semiconductor processing sheet and the adhesive layer to form a chip with the adhesive layer;
A semiconductor processing sheet for use in a method of manufacturing a semiconductor device comprising the step of adhering a chip having the adhesive layer attached to a substrate having a circuit through the adhesive layer,
The said base film is a base film for semiconductor process sheets of any one of Claims 1-9, The semiconductor process sheet characterized by the above-mentioned. After affixing the semiconductor processing sheet in any one of Claims 10-12 to a semiconductor wafer through the said adhesive bond layer, cutting the said semiconductor wafer into a semiconductor chip,
Peeling both at the interface between the substrate film for semiconductor processing sheet and the adhesive layer to form a chip with the adhesive layer;
And bonding the chip with the adhesive layer to the substrate with the circuit through the adhesive layer.

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