KR101183730B1 - Film for semiconductor device and semiconductor device - Google Patents

Abstract

Cover film, while maintaining the suppression function of the transfer mark when the adhesive film with a dicing sheet which the adhesive film laminated | stacked on the dicing film laminated | stacked in the roll shape the film for semiconductor devices laminated | stacked on the cover film at predetermined intervals. An adhesive film with a dicing sheet can be facilitated and the tip protrusion (picking) of which is excellent in reliability is excellent. The film for semiconductor devices of this invention is a film for semiconductor devices in which the adhesive film with a dicing sheet which the adhesive film was laminated | stacked on the dicing film was laminated | stacked on the cover film at predetermined intervals, and the tension of the dicing film at 23 degreeC is carried out. It is a film for semiconductor devices whose ratio Ea / Eb of the storage elastic modulus Ea and the tensile storage elastic modulus Eb of the cover film at 23 degreeC exists in the range of 0.001-100.

Description

Film and semiconductor device for semiconductor device {FILM FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE}

The present invention relates to a semiconductor device film and a semiconductor device manufactured using the film for semiconductor device.

BACKGROUND ART Conventionally, silver paste is used for fixing a semiconductor chip to a lead frame or an electrode member in the manufacturing process of a semiconductor device. Such a fixing process is performed by apply | coating a paste adhesive on the die pad of a lead frame, etc., mounting a semiconductor chip there, and hardening a paste adhesive layer.

However, paste-like adhesives generate large deviations in coating amount, coating shape, and the like due to the viscosity behavior and deterioration. As a result, since the paste adhesive thickness to be formed becomes nonuniform, the reliability of the adhesion strength with respect to a semiconductor chip is lacking. That is, when the coating amount of the paste adhesive is insufficient, the bonding strength between the semiconductor chip and the electrode member is lowered, and the semiconductor chip is peeled off in the subsequent wire bonding step. On the other hand, if the coating amount of the pasty adhesive is too large, the pasty adhesive flows out onto the semiconductor chip, resulting in poor characteristics, resulting in lower yield and reliability. The problem in such a fixing process becomes particularly remarkable with the enlargement of a semiconductor chip. Therefore, it is necessary to control the application amount of the paste adhesive frequently, which causes trouble in workability and productivity.

In the application | coating process of this paste adhesive, there exists a method of apply | coating a paste adhesive separately to a lead frame or a forming chip. However, in this method, it is difficult to homogenize the paste adhesive layer, and a special device or a long time is required for the application of the paste adhesive. For this reason, the dicing film and the adhesive film with a dicing sheet which provide the adhesive bond layer for chip | tip fixation required for a mounting process while maintaining adhesion of a semiconductor wafer in a dicing process are proposed (for example, refer patent document 1). ).

This adhesive film with a dicing sheet is formed by peeling an adhesive bond layer on a support base material, after dicing a semiconductor wafer under the holding | maintenance by the adhesive bond layer, extending | stretching a support base material, and forming a chip together with an adhesive bond layer It peels and collect | recovers this individually and makes it adhere to adherends, such as a lead frame, through the adhesive bond layer.

Conventionally, the adhesive film with a dicing sheet is produced by bonding together after producing each of a dicing film and an adhesive film separately from the constraint on a manufacturing process. For this reason, from the viewpoint of preventing the loosening, the winding shift, the position shift, the void (bubble), etc. from occurring in the film production process, the production was performed while applying tensile tension to each film during conveyance by a roll. All.

This type of adhesive film with a dicing sheet may be cured if it is placed under an environment of high temperature and high humidity, or stored for a long time under a load. As a result, the fluidity | liquidity of an adhesive bond layer, the fall of the holding force with respect to a semiconductor wafer, and the peelability after dicing are brought about. For this reason, the adhesive film with a dicing sheet is often transported while preserving in refrigeration of -30--10 degreeC, or refrigerated condition of -5-10 degreeC, and this enables the long-term storage of a film characteristic. .

As the adhesive film with a dicing sheet mentioned above, it processes beforehand into the shape (for example, circular shape) of the semiconductor wafer to attach, taking into consideration workability, such as attachment to a semiconductor wafer and installation in a ring frame at the time of dicing. There is a thing which precut processing was performed.

Such an adhesive film with a dicing sheet is manufactured by bonding the adhesive film punched in circular shape to the dicing film with which the adhesive layer was laminated | stacked on the base material, and then punching a dicing film in circular shape corresponding to a ring frame. Thereby, when dicing a semiconductor wafer, a ring frame is attached to the outer peripheral part of a dicing film, and the adhesive film with a dicing sheet can be fixed.

The precut processed adhesive film with a dicing sheet is attached to the long cover film at a predetermined interval, and then wound in a roll shape to be transported or stored as a film for semiconductor device manufacture.

Japanese Patent Laid-Open No. 60-57642

However, in the case of the film for semiconductor devices mentioned above, the thickness of the part in which the adhesive film with a dicing sheet is laminated | stacked becomes thicker than the thickness of the part which is not laminated | stacked. Therefore, especially when the number of windings increases or the tension at the time of winding up becomes high, the edge of the adhesive film with another dicing sheet is pressed by the adhesive film with one dicing sheet, and the winding marks are transferred, and the smoothness of the adhesive film is damaged. There was a case. Such transfer marks are particularly remarkable when the adhesive film is formed of a relatively soft resin, when the thickness of the adhesive film is thick, when the winding number of the film for semiconductor device is large, or the like. Then, when the adhesive film having such transfer marks and having a smoothness defect is attached to the semiconductor wafer, voids (bubbles) are generated between the semiconductor wafer and the adhesive film. Such voids may cause problems during semiconductor wafer processing, and may lower the yield of the semiconductor device to be manufactured.

Therefore, in order to suppress generation | occurrence | production of the said transcription mark, the method of weakening the winding pressure of the film for semiconductor devices is considered. However, in this method, there may be a problem in the case of actual use, such as a winding shift occurs, for example, the setting to the tape mounter becomes difficult.

Moreover, in order to suppress generation | occurrence | production of the said transcription mark, it is conceivable to provide a buffer base material in the back surface side of an adhesive sheet. However, this type of adhesive film with a dicing sheet has a high temperature and high humidity, but if stored for a long time under a load, the dicing film and the adhesive film are cured, so that the holding force to the semiconductor wafer decreases, the peeling property after dicing, and molding Poor fluidity and the like decrease. Therefore, the said adhesive film with a dicing sheet is often conveyed at the low temperature of a frozen state or a refrigerated state. By the way, a residual stress remains between an adhesive film and a buffer base material, and there exists a problem that peeling of both arises at the interface of an adhesive film and a buffer base material after transport in a low temperature state or long-term storage mentioned above by this. . Here, the temperature range of each of the freezing and refrigeration ranges from about -30 ° C to about -10 ° C and the refrigeration is -5 ° C to 10 ° C.

In addition, when the temperature change is large as in the above-described environment, stress concentration occurs on the cover film side and the base material side constituting the dicing film, and the force that cannot be absorbed or fully dispersed causes damage to the adhesive film, and transfers Marks are formed on the adhesive film, or the adhesive film is broken at the time of wafer mounting, and a cutout occurs. Moreover, when the elasticity modulus of a cover film is low, the defect which cannot make the front-end protrusion (picking) of the film at the time of peeling a cover film at the time of wafer mounting generate | occur | produces, and a machine stops by a conveyance error, or the cover film is stuck. The process proceeds to wafer bonding, and the wafer is laminated on the cover film. And since it conveys in the state which does not adhere, the wafer may be broken.

This invention is made | formed in view of the above-mentioned subject, The objective is to roll-shaped the film for semiconductor devices laminated | stacked on the cover film by the adhesive film with a dicing sheet in which the adhesive film was laminated | stacked on the dicing film at predetermined intervals. It is an object of the present invention to provide an adhesive film with a dicing sheet that can easily protrude the tip of the cover film (picking) while maintaining the suppression function of the transfer marks when wound.

The present inventors examined the film for semiconductor devices in order to solve the said conventional problem. As a result, by controlling the tensile storage modulus of the dicing film constituting the film for semiconductor devices and the tensile storage modulus of the cover film, the occurrence of transfer marks on the die bond film is suppressed, and the tip protrusion (picking) of the cover film is prevented. The inventors have found that the present invention can be facilitated, and have completed the present invention.

That is, the film for semiconductor devices which concerns on this invention is a film for semiconductor devices in which the adhesive film with a dicing sheet which the adhesive film was laminated | stacked on the dicing film was laminated | stacked on the cover film at predetermined intervals, and die | dye at 23 degreeC The ratio Ea / Eb of the tensile storage modulus Ea of the raw film and the tensile storage modulus Eb of the cover film at 23 ° C. is in the range of 0.001 to 100.

The larger the value of Ea / Eb, the harder the dicing film is and the softer the cover film is. On the other hand, as the value of Ea / Eb is smaller, the dicing film is relatively flexible, and the cover film is hard. According to the said structure, since the said Ea / Eb is 0.001 or more, the hardness (tensile storage elastic modulus Ea) of a dicing film becomes fixed or more. Therefore, it can suppress that a transcription mark generate | occur | produces in the adhesive film which comprises the adhesive film with a dicing sheet. Moreover, since said Ea / Eb is 0.001 or more and the hardness (tensile storage modulus Ea) of a dicing film becomes more than a fixed, at the time of bonding to a semiconductor wafer, the adhesive film with a dicing sheet and a cover with a dicing film The film can be appropriately peeled off (picked).

Moreover, since the said Ea / Eb is 100 or less, the hardness (tensile storage elastic modulus Eb) of a cover film becomes fixed or more, while the hardness (tensile storage elastic modulus Ea) of a dicing film becomes fixed or less. Therefore, the generation | occurrence | production of a fold in a cover film can be suppressed at the time of the bonding of an adhesive film to a cover film, and it can prevent that an adhesive film surface is damaged or a bubble mixes between films. As a result, it can suppress that a void generate | occur | produces between an adhesive film and a semiconductor wafer at the time of film lifting of a cover film, or mounting of a semiconductor wafer.

Thus, according to the said structure, when winding up in roll shape, it can suppress that a transcription mark arises in an adhesive film. Moreover, it can suppress that a void (bubble) generate | occur | produces between an adhesive film and a semiconductor wafer at the time of film lifting of a cover film, or the mounting of a semiconductor wafer.

In the above configuration, the adhesive film preferably has a glass transition temperature in the range of 0 to 100 ° C and a tensile storage modulus at 23 ° C before curing in the range of 50 MPa to 5000 MPa. By making the glass transition temperature of the said adhesive film more than O degreeC, it can suppress that the adhesiveness of the adhesive film in a B stage state becomes large, and can maintain favorable handleability. In addition, at the time of dicing, a part of adhesive film can be melted and it can prevent that an adhesive adheres to a semiconductor chip. As a result, good pickup of the semiconductor chip can be maintained. On the other hand, the fall of the fluidity | liquidity of an adhesive film can be prevented by making glass transition temperature into 100 degrees C or less. In addition, good adhesion with the semiconductor wafer can be maintained. In addition, when an adhesive film is a thermosetting type, the glass transition temperature of an adhesive film means the thing before thermosetting. Furthermore, by setting the tensile storage modulus at 23 ° C. before curing of the adhesive film to 50 MPa or more, it is possible to prevent a part of the pressure-sensitive adhesive layer from melting and adhering the pressure-sensitive adhesive to the semiconductor chip during dicing. On the other hand, when the tensile storage modulus is 5000 MPa or less, good adhesion to the semiconductor wafer or the substrate can also be maintained.

In the above structure, the thickness of the cover film is preferably 10 to 100㎛.

In the above configuration, the thickness of the dicing film is preferably 25 to 180㎛.

In the above configuration, the tensile storage modulus Ea of the dicing film at 23 ° C is preferably 1 to 500 MPa.

In the above configuration, the tensile storage modulus Eb of the cover film at 23 ° C is preferably 1 to 5000 MPa.

Moreover, the semiconductor device which concerns on this invention is manufactured using the film for semiconductor devices described above.

FIG. 1A is a plan view showing an outline of a film for semiconductor devices according to the present embodiment, and FIG. 1B is a partial cross-sectional view thereof.
FIG. 2 is a partial cross-sectional view of the semiconductor device film shown in FIGS. 1A and 1B wound in a roll shape. FIG.
It is a schematic diagram for demonstrating the manufacturing process of the film for semiconductor devices.

The film for semiconductor devices which concerns on this embodiment is demonstrated below.

FIG. 1A is a plan view showing an outline of a film for semiconductor devices according to the present embodiment, and FIG. 1B is a partial cross-sectional view thereof. The film 10 for semiconductor devices has the structure by which the adhesive film 1 with a dicing sheet was laminated | stacked on the cover film 2 at predetermined intervals. In the adhesive film 1 with a dicing sheet, the adhesive film 12 is laminated | stacked on the dicing film 11, and the dicing film 11 is the adhesive layer 14 laminated | stacked on the base material 13 Structure.

FIG. 2 is a partial cross-sectional view of the semiconductor device film shown in FIGS. 1A and 1B wound in a roll shape. FIG. As shown in FIG. 2, in the film 10 for semiconductor devices wound by roll shape, the step 19 is carried out to the part by which the adhesive film 1 with a dicing sheet is laminated | stacked, and the part 18 which is not laminated | stacked. Is present. In addition, the some adhesive film 1 with a dicing sheet on the cover film 2 is laminated | stacked mutually shifting in the horizontal direction. Therefore, the edge of the adhesive film 1 with another dicing sheet is pressed by the adhesive film 1 with one dicing sheet.

In the film 10 for semiconductor devices, the ratio Ea / Eb of the tensile storage elastic modulus Ea of the dicing film 11 at 23 degreeC, and the tensile storage elastic modulus Eb of the cover film 2 at 23 degreeC is 0.001-100 In range It is preferable that it is 0.01-50, and, as for said Ea / Eb, it is more preferable that it is 0.1-5. The larger the value of Ea / Eb, the harder the dicing film 11 is and the softer the cover film 2 is. On the other hand, as the value of Ea / Eb is smaller, the dicing film 11 is relatively soft, and the cover film 2 is hard. According to the film 10 for semiconductor devices, since said Ea / Eb is 0.001 or more, the hardness (tensile storage modulus Ea) of the dicing film 11 becomes more than a fixed. Therefore, it can suppress that a transcription mark generate | occur | produces in the adhesive film 12 which comprises the adhesive film 1 with a dicing sheet. Moreover, according to the film 10 for semiconductor devices, since the said Ea / Eb is 0.001 or more and the hardness (tensile storage modulus Ea) of the dicing film 11 becomes more than a fixed, at the time of joining to a semiconductor wafer, The adhesive film 1 with a dicing sheet and the cover film 2 which have the dicing film 11 can be peeled off (picking) suitably.

In addition, since the said Ea / Eb is 100 or less, the hardness (tensile storage modulus Eb) of the cover film 2 becomes more than a constant, while the hardness (tensile storage modulus Ea) of the dicing film 11 has a fixed value or less. do. Therefore, when the adhesive film 12 is bonded to the cover film 2, the occurrence of folding in the cover film 2 can be suppressed, and the surface of the adhesive film 12 is damaged or bubbles are mixed between the films. Can be prevented. As a result, it can suppress that a void generate | occur | produces between an adhesive bond layer and a semiconductor wafer at the time of film lift of the cover film 2, or mounting of a semiconductor wafer.

Thus, according to the film 10 for semiconductor devices, when winding up in roll shape, it can suppress that a transcription mark arises in the adhesive film 12. FIG. Moreover, it can suppress that a void (bubble) generate | occur | produces between the film of the cover film 2, and the mounting of a semiconductor wafer between the adhesive film 12 and a semiconductor wafer.

It is preferable that peeling force F1 between the adhesive film 12 and the cover film 2 is smaller than peeling force F2 between the adhesive film 12 and the dicing film 11. In the manufacturing process of the semiconductor device film 10, the dicing film 11, the adhesive film 12, and the cover film from the viewpoint of preventing occurrence of loosening, winding shift, position shift, voids (bubbles), and the like, in the manufacturing process thereof. It is produced by laminating while applying tensile tension to (2). Therefore, tensile residual distortion exists in each film. This tensile residual distortion causes shrinkage in each film, for example, when frozen at -30 to -10 ° C or transported or stored for a long time at a low temperature of -5 to 10 ° C. For example, the dicing film has the largest degree of shrinkage, and the cover film has the smallest degree of shrinkage. Here, in the film for semiconductor devices which concerns on this embodiment, by making said peeling force F1 and F2 into a relationship of F1 <F2, the interface peeling between the films resulting from the difference of shrinkage in each film, and the film of the cover film 2 The lifting phenomenon can be prevented. In addition, it is also possible to prevent part or all of the adhesive film 12 from being transferred to the cover film 2.

The peeling force F1 between the adhesive film 12 and the cover film 2 is preferably in the range of 0.025 to 0.075 N / 100 mm, more preferably in the range of 0.03 to 0.06 N / 100 mm, and in the range of 0.035 to 0.05 N / 100 mm. I am particularly preferred. When the peeling force F1 is less than 0.025N / 100mm, for example, when frozen at -30 to -10 ° C or transported at a low temperature of -5 to 10 ° C or stored for a long time, the adhesive film 12 and the cover film ( Each of 2) shrinks at a different shrinkage rate, whereby a film lifting phenomenon of the cover film 2 may occur. Moreover, during conveyance of the film 10 for semiconductor devices, etc., wrinkles, a winding shift | offset | dye, and mixing of a foreign material may be generated. In addition, voids (bubbles) may be generated between the adhesive film 12 and the semiconductor wafer when the semiconductor wafer is mounted. On the other hand, when the peeling force F1 is larger than 0.075N / 100mm, since the adhesiveness of the adhesive film 12 and the cover film 2 is too strong, at the time of peeling of the cover film 2 or its shrinkage, the adhesive film 12 will be removed. The adhesive agent (it mentions later for details) to comprise may be transferred to one part or whole surface. In addition, the value of the said peeling force F1 means the peeling force between the adhesive film 12 and the cover film 2 before thermosetting, when the adhesive film 12 is a thermosetting type.

Moreover, the peeling force F2 between the adhesive film 12 and the dicing film 11 has preferable inside of the range of 0.08-10N / 100mm, More preferable inside of the range of 0.1-6N / 100mm, and 0.15 ~ 0.4N / 100mm Range I is particularly preferred. When the peeling force F2 is 0.08 N / 100 mm or more, the dicing film 11 and the adhesive film, for example, when frozen at -30 to -10 ° C or transported or stored for a long time at a low temperature of -5 to 10 ° C Each of (12) shrinks at a different shrinkage rate, whereby interfacial peeling can be prevented from occurring between the dicing film 11 and the adhesive film 12. Moreover, during conveyance of the film 10 for semiconductor devices, etc., wrinkles, winding shift | offset | difference, mixing of a foreign material, and generation of a void can be prevented. In addition, chip scattering and chipping can be prevented when dicing a semiconductor wafer. On the other hand, when peeling force F2 is 10 N / 100 mm or less, the peelability between the adhesive film 12 and the adhesive layer 14 at the time of pickup of a semiconductor chip will become suitable, and the pickup of a semiconductor chip can be made favorable. In addition, the adhesive (which is mentioned later for details) which comprises the adhesive layer 14 to a semiconductor chip with an adhesive agent can be prevented from fully sticking. In addition, the numerical range of the said peeling force F2 includes the case where the adhesive layer of the dicing film 11 is ultraviolet curing type, and also hardened | cured to some extent by ultraviolet irradiation previously. In addition, the hardening of the adhesive layer by ultraviolet irradiation may be before bonding with the adhesive film 12, and may be after bonding.

 The value of the said peeling force F1 and F2 is the measured value in the T-type peeling test (JISK 6854-3) performed on the conditions of the temperature of 23 +/- 2 degreeC, peeling rate 300mm / min, and inter-chuck distance 100mm. In addition, the brand name "autograph AGS-H" (made by Shimadzu Corporation) was used as a tensile tester.

The base material 13 of the dicing film 11 serves as the strength matrix of not only the dicing film 11 but the film 10 for semiconductor devices. As the base material 13, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymerized polypropylene, block copolymerized polypropylene, homopolypropylene, polybutene, polymethylpentene, etc. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, poly Polyester such as urethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyether ether ketone, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass , Glass fiber, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, Silicone resin, a metal (foil), paper, etc. are mentioned. In addition, when the adhesive layer 14 is an ultraviolet curing type, it is preferable that it has ultraviolet permeability among the things illustrated above as the base material 13.

Moreover, as a material of the base material 13, polymers, such as a crosslinked body of the said resin, are mentioned. The said plastic film may be used by non-stretching, and may use the thing which performed the uniaxial or biaxial stretching process as needed. According to the resin sheet which provided heat shrinkability by an extending | stretching process etc., the contact area of the adhesive layer 14 and the adhesive film 12 is reduced by heat shrinking the base material 13 after dicing, and the recovery of a semiconductor chip is made easy. can do.

The surface of the base material 13 is chemical or physical such as conventional surface treatment, for example, chromic acid treatment, ozone exposure, flame exposure, high pressure electric shock exposure, ionization radiation treatment, etc., in order to increase the adhesiveness and retention of the adjacent layers. Treatment and coating with a primer (for example, an adhesive substance described later) can be performed.

The base material 13 can select suitably the same kind or a different kind, and can use what blended several species as needed. Moreover, in order to provide antistatic ability, the base material 13 can be provided with the vapor deposition layer of the conductive material whose thickness which consists of a metal, an alloy, these oxides, etc. is about 30-500 kPa on the base material 13. The base material 13 may be a single layer or two or more types of multilayers.

10-170 micrometers is preferable in order that the thickness of the base material 13 ensures the conveyance of a film, and also prevents tearing, crushing, and plastic deformation of the base material 13 also in the case of the expansion of a support base material in a bonding process. More preferably, it is 50-150 micrometers, More preferably, it is 100-130 micrometers.

It does not specifically limit as an adhesive used for formation of the adhesive layer 14, For example, general pressure-sensitive adhesives, such as an acrylic adhesive and a rubber-based adhesive, can be used. As said pressure sensitive adhesive, the acrylic adhesive which uses an acryl-type polymer as a base polymer from a point of cleanliness by the organic solvents, such as ultrapure water of an electronic component sensitive to contamination, such as a semiconductor wafer and glass, and alcohol, is preferable.

As said acryl-type polymer, (meth) acrylic-acid alkylester (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl Ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester , Alkyl groups such as hexadecyl ester, octadecyl ester, and acyl ester, such as linear or branched alkyl esters having 1 to 30 carbon atoms, especially 4 to 18 carbon atoms, and (meth) acrylic acid cycloalkyl esters (for example, Cyclopentyl ester, cyclohexyl ester, and the like) As there may be mentioned acrylic polymers used. In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and all of the (meth) of this invention are synonymous.

The said acryl-type polymer may contain the unit corresponding to the other monomer component copolymerizable with the said (meth) acrylic-acid alkylester or cycloalkylester as needed for the purpose of modification, such as cohesion force and heat resistance. Examples of such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid and crotonic acid; Acid anhydride monomers such as maleic anhydride and itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, Hydroxyl group-containing monomers such as (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Sulfonic acid groups such as styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate, and (meth) acryloyloxynaphthalenesulfonic acid Containing monomers; Phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate; Acrylamide, acrylonitrile, etc. are mentioned. These copolymerizable monomer components may be used alone or in combination of two or more. As for the usage-amount of these copolymerizable monomers, 40 weight% or less of all the monomer components is preferable.

In addition, in order to crosslink the said acrylic polymer, a polyfunctional monomer etc. can also be included as a monomer component for copolymerization as needed. As such a polyfunctional monomer, for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylic Late, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, Polyester (meth) acrylate, urethane (meth) acrylate, etc. are mentioned. These polyfunctional monomers can also be used by 1 type (s) or 2 or more types. As for the usage-amount of a polyfunctional monomer, 30 weight% or less of all the monomer components is preferable from a viewpoint of adhesive characteristics.

The said acrylic polymer is obtained by superposing | polymerizing a single monomer or 2 or more types of monomer mixtures. The polymerization can be carried out in any manner such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization or the like. It is preferable that the content of the low molecular weight substance is small in terms of preventing contamination to a clean adherend. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 1.5 million.

Moreover, in order to raise the number average molecular weights, such as an acryl-type polymer which is a base polymer, you may employ | adopt an external crosslinking agent suitably for the said adhesive. As a specific means of an external crosslinking method, the method of making it react by adding so-called crosslinking agents, such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine type crosslinking agent, is mentioned. In the case of using an external crosslinking agent, the amount of its use is appropriately determined depending on the balance with the base polymer to be crosslinked and also according to the use of the adhesive. Generally, it is preferable to mix | blend about 5 weight part or less and 0.1-5 weight part with respect to 100 weight part of said base polymers. In addition, you may use additives, such as various conventionally well-known tackifiers and antioxidant, other than the said component as needed for an adhesive.

The adhesive layer 14 can be formed with an ultraviolet curable adhesive. The ultraviolet curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation of ultraviolet rays, thereby easily lowering the adhesive strength thereof, and making only the portion corresponding to the semiconductor wafer attached portion of the pressure-sensitive adhesive layer 14 makes the difference in the adhesive strength with other portions. Can be.

The tensile storage modulus Ea of the dicing film 11 at 23 ° C is preferably in the range of 1 to 500 MPa, and more preferably in the range of 5 to 200 MPa. In addition, when the adhesive layer 14 is formed of the ultraviolet curable adhesive, the tensile storage elastic modulus Ea of the dicing film 11 in 23 degreeC after ultraviolet-hardening the adhesive layer 14 is in the range of 1-500 Mpa. It is preferable and the inside of the range of 5-200 MPa is more preferable. By setting the tensile storage modulus Ea to 1 MPa or more, good pickup properties can be maintained. On the other hand, by setting the tensile storage modulus Ea to 500 MPa or less, generation of chip scattering can be prevented. In addition, since the dicing film 11 can be expanded, adjacent chips can contact each other, preventing the occurrence of cracks and sticking, and achieving good pickup. In addition, it is preferable that irradiation of the said ultraviolet-ray is performed by the ultraviolet-ray integrated light quantity of 30-1000mJ / cm <2>, for example. By setting the amount of ultraviolet irradiation integrated light to 30 mJ / cm 2 or more, the pressure-sensitive adhesive layer 14 can be cured without being insufficient, and excessive adhesion with the adhesive film 12 can be prevented. As a result, good pickup can be exhibited at the time of pickup of the semiconductor chip. In addition, it is possible to prevent the adhesive of the pressure-sensitive adhesive layer 14 from adhering to the adhesive film 12 after pickup (so-called pull residue). On the other hand, by setting the amount of ultraviolet irradiation accumulated light to be 1000 mJ / cm 2 or less, an extreme decrease in the adhesive force of the pressure-sensitive adhesive layer 14 is prevented, and thereby peeling occurs between the adhesive films 12, thereby resulting in dropping of the mounted semiconductor wafer. Prevent it from happening. In addition, it is possible to prevent generation of chip scatter of the formed semiconductor chip during dicing of the semiconductor wafer.

The value of the tensile storage modulus Ea of the dicing film 11 is based on the following measuring method. That is, the solution of an adhesive composition is apply | coated and dried on the peeling liner which performed the mold release process, a base material is bonded to the surface of the said adhesive layer, and a dicing film is formed. The tensile storage modulus at 23 ° C. of the dicing film 11 is measured using this dicing film using a viscoelasticity measuring device (manufactured by Leometrics Corporation: model: RSA-II). More specifically, a measurement sample having a length of 30.0 mm x width 5.0 mm and a cross-sectional area of 0.125 to 0.9 mm 2 is set in a film tension measurement jig, and the frequency 10.0 Hz, distortion of 0.025%, and temperature rising rate in a temperature range of -30 ° C to 100 ° C. Measure under the condition of 10 ° C / min.

Here, the adhesive film 12 is a structure formed only in the attachment part according to the shape seen from the plane of a semiconductor wafer. Therefore, by hardening the ultraviolet curable adhesive layer 14 according to the shape of the adhesive film 12, the adhesive force of the part corresponding to a semiconductor wafer adhesion part can be easily reduced. Since the adhesive film 12 adheres to the portion where the adhesive force is lowered, the interface between the portion of the adhesive layer 14 and the adhesive film 12 has a property of being easily peeled off at the time of pickup. On the other hand, the part which does not irradiate an ultraviolet-ray has sufficient adhesive force.

As described above, the portion where the pressure-sensitive adhesive layer 14 is formed of an uncured ultraviolet curable pressure-sensitive adhesive adheres to the adhesive film 12 and can secure a holding force when dicing. Thus, the ultraviolet curable adhesive can support the adhesive film 12 for fixing a chip-shaped semiconductor wafer (semiconductor chip etc.) to adherends, such as a board | substrate, with good balance of adhesion | attachment and peeling. When the adhesive film 12 is laminated only on the attachment portion of the semiconductor wafer, the wafer ring is fixed in the region where the adhesive film 12 is not laminated.

An ultraviolet curable pressure sensitive adhesive has ultraviolet curable functional groups, such as a carbon-carbon double bond, and what shows adhesiveness can be used without a restriction | limiting in particular. As an ultraviolet curable adhesive, the addition type ultraviolet curable adhesive which mix | blended an ultraviolet curable monomer component and an oligomer component with general pressure-sensitive adhesives, such as the said acrylic adhesive and a rubber-based adhesive, can be illustrated, for example.

As an ultraviolet curable monomer component to mix | blend, a urethane oligomer, urethane (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth), for example Acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, etc. Can be mentioned. Moreover, various oligomers, such as a urethane type, a polyether type, a polyester type, a polycarbonate type, a polybutadiene type, are mentioned as an ultraviolet curable oligomer component, It is suitable that the molecular weight is the range of about 100-30000. The compounding quantity of an ultraviolet curable monomer component and an oligomer component can determine suitably the quantity which can lower the adhesive force of an adhesive layer according to the kind of said adhesive layer. Generally, it is 5-500 weight part, Preferably it is about 40-150 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

Moreover, as an ultraviolet curable adhesive, the internal type ultraviolet curable adhesive which used the thing which has a carbon-carbon double bond in a polymer side chain, a main chain, or a main chain terminal as a base polymer other than the addition type ultraviolet curable adhesive mentioned above is mentioned. Since the internal type ultraviolet curable pressure sensitive adhesive does not need to contain an oligomer component or the like which is a low molecular weight component or does not contain much, an oligomer component or the like does not move in the adhesive over time, and thus a pressure sensitive adhesive layer having a stable layer structure It is preferable because it can be formed.

The base polymer having a carbon-carbon double bond can be used without particular limitation as long as it has a carbon-carbon double bond and has adhesiveness. As such a base polymer, what makes an acryl-type polymer a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method of introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. However, the molecular design is easy to introduce the carbon-carbon double bond into the polymer side chain. For example, after copolymerizing a monomer having a functional group in an acrylic polymer in advance, a compound having a functional group and a carbon-carbon double bond capable of reacting with the functional group is condensed or added while maintaining the ultraviolet curability of the carbon-carbon double bond. A method of making it react is mentioned.

Examples of the combination of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups. The combination of a hydroxyl group and an isocyanate group is preferable at the point which reaction trace is easy among the combination of these functional groups. Moreover, as long as it is a combination which produces | generates the acryl-type polymer which has the said carbon-carbon double bond by the combination of these functional groups, a functional group may be any of an acryl-type polymer and the said compound, but in the above-mentioned preferable combination, an acryl-type polymer has a hydroxyl group. It is preferable that the compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ?,? -Dimethylbenzyl isocyanate and the like have. As the acrylic polymer, those obtained by copolymerizing the hydroxy group-containing monomers exemplified above, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like are used.

The intrinsic ultraviolet curable pressure sensitive adhesive can be used alone of the base polymer (particularly an acrylic polymer) having the carbon-carbon double bond, but may be blended with the ultraviolet curable monomer component or oligomer component to the extent that the properties are not deteriorated. have. An ultraviolet curable oligomer component etc. exist in the range of 30 weight part with respect to 100 weight part of base polymers normally, Preferably it is the range of 0-10 weight part.

The said ultraviolet curable adhesive contains a photoinitiator, when hardening by ultraviolet rays etc .. As a photoinitiator, 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, (alpha)-hydroxy- (alpha), (alpha) '-dimethylacetophenone, 2-methyl- 2-, for example. Α-ketol compounds such as hydroxypropiophenone and 1-hydroxycyclohexylphenyl ketone; Methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2-morpholinopropane Acetophenone compounds such as -1; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; Ketal compounds such as benzyl dimethyl ketal; Aromatic sulfonyl chloride-based compounds such as 2-naphthalenesulfonyl chloride; Optically active oxime compounds such as 1-phenone-1,1-propanedione-2- (o-ethoxycarbonyl) oxime; Benzophenone compounds such as benzophenone, benzoylbenzoic acid and 3,3'-dimethyl-4-methoxybenzophenone; Thioxanthone, 2-chloro thioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxide Thioxanthone type compounds, such as a santone and 2, 4- diisopropyl thioxanthone; Camphorquinone; Halogenated ketones; Acylphosphine oxide; Acyl phosphonate etc. are mentioned. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acryl-type polymer which comprises an adhesive.

In the said ultraviolet curable adhesive layer 14, you may make it contain the compound colored by ultraviolet irradiation as needed. By including the compound colored by ultraviolet irradiation in the adhesive layer 14, only the part irradiated with the ultraviolet ray can be colored. Thereby, whether the ultraviolet-ray is irradiated to the adhesive layer 14 can be immediately determined by visual observation, it is easy to recognize a semiconductor wafer adhesion part, and the bonding of a semiconductor wafer is easy. Moreover, when detecting a semiconductor chip by an optical sensor etc., the detection precision becomes high, and a malfunction does not occur at the time of pick-up of a semiconductor chip.

The compound which is colored by ultraviolet irradiation is a compound which is colorless or light color before ultraviolet irradiation but becomes colored by ultraviolet irradiation. Preferred examples of such compounds include leuco dyes. As the leuco dye, conventional triphenylmethane-based, fluorane-based, phenothiazine-based, auramine-based and spiropyran-based ones are preferably used. Specifically 3- [N- (p-tolylamino)]-7-anilinofluorane, 3- [N- (p-tolyl) -N-methylamino] -7-anilinofluorane, 3- [ N- (p-tolyl) -N-ethylamino] -7-anilinofluorane, 3-diethylamino-6-methyl-7-anilinofluorane, crystal violet lactone, 4,4 ', 4 "- Trisdimethylaminotriphenylmethanol, 4,4 ', 4 "-trisdimethylaminotriphenylmethane, etc. are mentioned.

As a developer used suitably together with these leuco dyes, electron acceptors, such as the initial polymer of phenol formalin resin, aromatic carboxylic acid derivative, and activated clay which are used conventionally, are mentioned, and when changing a hue, Known coloring agents can also be used in combination.

The compound colored by such ultraviolet irradiation may be once contained in an ultraviolet curable adhesive after melt | dissolving in an organic solvent etc., and may be included in the said adhesive as a fine powder shape. The use ratio of this compound is 10 weight% or less in the adhesive layer 14, Preferably it is 0.01 to 10 weight%, It is preferable that it is 0.5 to 5 weight% more preferably. When the ratio of the compound is more than 10% by weight, the ultraviolet ray irradiated to the pressure-sensitive adhesive layer 14 is absorbed excessively by this compound, so that hardening of the portion corresponding to the semiconductor wafer adhesion portion in the pressure-sensitive adhesive layer 14 is insufficient. And adhesive force may not fall enough. On the other hand, in order to fully color, it is preferable to make the ratio of the said compound into 0.01 weight% or more.

In addition, when forming the adhesive layer 14 with an ultraviolet curable adhesive, the thing in which all or one part except the part corresponding to the semiconductor wafer adhesion part of the at least single side | surface of the base material 13 was light-shielded, After the ultraviolet curable pressure sensitive adhesive layer 14 is formed, the ultraviolet ray is irradiated to harden the portion corresponding to the portion attached to the semiconductor wafer, thereby forming the portion having reduced adhesive force. As a light shielding material, what can become a photomask on a support film can be created by printing, vapor deposition, etc. According to such a manufacturing method, the film 10 for semiconductor devices of this invention can be manufactured efficiently.

Moreover, when hardening inhibition by oxygen arises at the time of ultraviolet irradiation, it is preferable to block oxygen (air) from the surface of the ultraviolet curable adhesive layer 14 by arbitrary methods. For example, the method of coating the surface of the said adhesive layer 14 with a separator, the method of irradiating an ultraviolet-ray in nitrogen gas atmosphere, etc. are mentioned.

Although the thickness of the adhesive layer 14 is not specifically limited, It is preferable that it is about 1-50 micrometers from the point of compatibility of the prevention of the notch of a chip | tip cutting surface, and the fixing holding of an adhesive film. Preferably it is 2-30 micrometers, and 5-25 micrometers is preferable.

In addition, the sum total of the thickness of the base material 13 and the thickness of the adhesive layer 14, ie, the thickness of the dicing film 11, is from the viewpoint of carrying property, the prevention of the notch of a chip cutting surface, the fixed holding of an adhesive film, and the pick-up property. 25-180 micrometers is preferable, More preferably, it is 50-150 micrometers, More preferably, it is 100-130 micrometers.

The adhesive film 12 is a layer having an adhesive function, and as the constituent material thereof, a thermoplastic resin and a thermosetting resin may be used in combination, or a thermoplastic resin may be used alone.

The glass transition temperature of the adhesive film 12 has preferable inside of the range of 0-100 degreeC, More preferably, the inside of the range of 10-80 degreeC is preferable, More preferably, it is 20 degreeC-60 degreeC. When the said glass transition temperature is 0 degreeC or more, the adhesiveness of the adhesive film 12 in a B stage state will become large and it can prevent that the handleability falls. In addition, during dicing of the semiconductor wafer, a hot melt adhesive adheres to the semiconductor chip by friction with the dicing blade, thereby preventing the pick-up from being caused. On the other hand, by making glass transition temperature 100 degrees C or less, it can prevent that fluidity | liquidity and adhesiveness with a semiconductor wafer fall. Here, the said glass transition temperature is a frequency of 10.0 Hz, a distortion of 0.025%, and a temperature increase rate of 10 degree-C / min in the temperature range of -30 degreeC-250 degreeC using a viscoelasticity measuring apparatus (made by Leometrics company: model: RSA-II). Tanδ (G "(loss modulus) / G '(storage modulus)) measured under the conditions of is a temperature indicating a maximum value.

The tensile storage modulus of the adhesive film 12 at 23 ° C before curing is preferably in the range of 50 to 5000 MPa, more preferably in the range of 100 to 3000 MPa, and even more preferably in the range of 300 to 2000 MPa. By making the said tensile storage elastic modulus of the adhesive film 12 into 50 Mpa or more, generation | occurrence | production of the transcription mark in the adhesive film 12 can be suppressed more reliably. Moreover, the slipperiness | lubricacy of the adhesive film 12 improves and it can suppress more reliably that a wrinkle generate | occur | produces at the time of bonding to the cover film 2. Moreover, adhesiveness with the mounted semiconductor wafer, the board | substrate to die-bond, etc. can be made favorable by making the said tensile storage elastic modulus of the adhesive film 12 into 5000 Mpa or less. In addition, in this invention, when the adhesive film is a thermosetting type, the tensile storage elastic modulus of an adhesive film means the tensile storage elastic modulus before thermosetting.

The value of the tensile storage modulus is based on the following measurement method. That is, the solution of an adhesive composition is apply | coated and dried on the release liner which performed the mold release process, and the adhesive film 12 of thickness 100micrometer is formed. The tensile storage elastic modulus in 23 degreeC before the hardening of the adhesive film 12 is measured using this viscoelasticity measuring apparatus (Leometrics make: model: RSA-II). More specifically, the sample size is 30.0 × 5.0 in width × 0.1 mm in thickness, and the measurement sample is set in a film tension measurement jig, and the frequency is 10.0 Hz, the distortion is 0.025%, and the temperature is raised in the temperature range of -30 ° C to 280 ° C. Measure under the condition of the rate 10 ° C / min.

It is preferable that the weight average molecular weights of the said thermoplastic resin are 300,000 or more and 1.5 million or less, More preferably, it is 350,000-1 million, More preferably, it is 400,000-80,000. By making the weight average molecular weight of the said thermoplastic resin into 300,000 or more, the tensile storage elastic modulus of the adhesive film in 23 degreeC can be controlled to a suitable value. If the weight average molecular weight of the thermoplastic resin is 300,000 or more and the content of the relatively low molecular weight substance is low, it is possible to prevent contamination of the clean adherend. In addition, a weight average molecular weight is measured by GPC (gel permeation chromatography) and says the value computed by polystyrene conversion.

Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin And polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins and fluorine resins. These thermoplastic resins can be used individually or in combination of 2 or more types. Among these thermoplastic resins, acrylic resins having less ionic impurities and high heat resistance and which can ensure the reliability of semiconductor devices are particularly preferable.

It does not specifically limit as said acrylic resin, The polymer etc. which have 1 or 2 or more types of ester of acrylic acid or methacrylic acid which have a C30 or less, especially a C4-C18 linear or branched alkyl group are mentioned. have. As said alkyl group, a methyl group, an ethyl group, a propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group or dodecyl group Etc. can be mentioned.

Moreover, it does not specifically limit as another monomer which forms the said polymer, For example, it contains carboxyl groups, such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, or crotonic acid. Monomers, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, (meth) acrylic acid 6 -Hydroxyhexyl, (meth) acrylic acid 8-hydroxyoctyl, (meth) acrylic acid 10-hydroxydecyl, (meth) acrylic acid 12-hydroxylauryl or (4-hydroxymethylcyclohexyl) -methylacrylate, etc. Hydroxyl group-containing monomer, styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamide-2-methylpropanesulfonic acid, (meth) acrylamidopropanesulfonic acid, sulfopropyl (meth) acrylate A bit or a (meth) sulfonic acid group-containing monomers such as one oxy-naphthalene sulfonic acid with acrylic or 2-hydroxyethyl acrylate may be mentioned phosphoric acid group-containing monomers such as phosphate. Especially, a carboxyl group-containing monomer is preferable from a viewpoint of making the tensile storage elastic modulus of a die bond film into a suitable value.

Examples of the thermosetting resin include a phenol resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, and a thermosetting polyimide resin. These resin can be used individually or in combination of 2 or more types. In particular, epoxy resins containing less ionic impurities or the like that corrode semiconductor chips are preferred. As the curing agent of the epoxy resin, a phenol resin is preferable.

The epoxy resin is not particularly limited as long as it is generally used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl Bifunctional epoxy resins, polyfunctional epoxy resins such as type, naphthalene type, fluorene type, phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type, or hydantoin type, tris Epoxy resins, such as glycidyl isocyanurate type or glycidyl amine type, are used. These can be used individually or in combination of 2 or more types. Of these epoxy resins, novolak type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferable. It is because these epoxy resins are rich in reactivity with the phenol resin as a hardening | curing agent, and are excellent in heat resistance.

Moreover, the said phenol resin acts as a hardening | curing agent of the said epoxy resin, For example, a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, tert- butyl phenol novolak resin, a nonyl phenol novolak resin, etc. Polyoxystyrene, such as a novolak-type phenol resin, a resol-type phenol resin, polyparaoxy styrene, etc. are mentioned. These can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferable. This is because the connection reliability of the semiconductor device can be improved.

It is preferable to mix | blend the compounding ratio of the said epoxy resin and a phenol resin so that the hydroxyl group in a phenol resin per 0.5 equivalent of epoxy groups in the said epoxy resin component may be 0.5-2.0 equivalent. More suitable is 0.8 to 1.2 equivalents. That is, when the compounding ratio of both is out of the said range, sufficient hardening reaction will not advance and it will become easy to deteriorate the characteristic of hardened | cured epoxy resin.

Moreover, in this embodiment, the adhesive film 12 containing an epoxy resin, a phenol resin, and an acrylic resin is especially preferable. Since these resins have little ionic impurities and high heat resistance, the reliability of the semiconductor chip can be ensured. In this case, the blending ratio is 10 to 200 parts by weight based on 100 parts by weight of the acrylic resin component.

The adhesive film 12 may use a thermosetting catalyst as a structural material of the adhesive film 12 as needed. As the compounding ratio, the inside of the range of 0.1-3.0 weight part is preferable with respect to 100 weight part of organic components, The inside of the range of 0.15-2.0 weight part is more preferable, The inside of the range of 0.2-1.0 weight part is especially preferable. By carrying out a compounding ratio 0.1 weight part or more, the adhesive force after thermosetting can be expressed favorably. On the other hand, the fall of storage property can be suppressed by making a compounding ratio into 3.0 weight part or less.

It does not specifically limit as said thermosetting catalyst, For example, an imidazole compound, a triphenyl phosphine type compound, an amine compound, a triphenyl borane type compound, a trihalogen borane type compound, etc. are mentioned. These can be used individually or in combination of 2 or more types.

Examples of the imidazole compound include 2-methylimidazole (trade name; 2MZ), 2-undecylimidazole (trade name; C11Z), 2-heptadecylimidazole (trade name; C17Z), and 1,2-dimethyl. Midazole (trade name; 1.2DMZ), 2-ethyl-4-methylimidazole (trade name; 2E4MZ), 2-phenylimidazole (trade name; 2PZ), 2-phenyl-4-methylimidazole (trade name; 2P4MZ), 1-benzyl-2-methylimidazole (trade name; 1B2MZ), 1-benzyl-2-phenylimidazole (trade name; 1B2PZ), 1-cyanoethyl-2-methylimidazole (trade name; 2MZ-CN), 1-cyanoethyl-2-undecylimidazole (trade name; C11Z-CN), 1-cyanoethyl-2-phenylimidazolium trimellitate (trade name; 2PZCNS-PW), 2 , 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; 2MZ-A), 2,4-diamino-6- [2'- Undecylimidazolyl- (1 ')]-ethyl-s-triazine (trade name; C11Z-A), 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- ( 1 ')]-ethyl-s-triazine (trade name; 2E4MZ-A), 2,4-diamino-6- [2'-methylimidazolyl- (1')]- Tyl-s-triazineisocyanuric acid adduct (trade name; 2MA-OK), 2-phenyl-4,5-dihydroxymethylimidazole (trade name; 2PHZ-PW), 2-phenyl-4-methyl- 5-hydroxymethylimidazole (brand name; 2P4MHZ-PW) etc. are mentioned (all are the Shikoku Kasei Co., Ltd. product).

It does not specifically limit as said triphenyl phosphine type compound, For example, triphenyl phosphine, tributyl phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyl triphosphine, etc. Organophosphine, tetraphenylphosphonium bromide (trade name; TPP-PB), methyltriphenylphosphonium chloride (trade name; TPP-MB), methyltriphenylphosphonium chloride (trade name; TPP-MC), methoxymethyltriphenyl Phosphonium (brand name; TPP-MOC), benzyl triphosphonium chloride (brand name; TPP-ZC), etc. are mentioned (all are manufactured by Hokko Chemical Co., Ltd.). Moreover, it is preferable that the said triphenyl phosphine type compound shows a substantially insoluble property with respect to an epoxy resin. When it becomes non-soluble with respect to an epoxy resin, it can suppress that thermal hardening progresses excessively. As a thermosetting catalyst which has a triphenyl phosphine structure and shows substantially insoluble to an epoxy resin, methyl triphenyl phosphonium (brand name; TPP-MB) etc. can be illustrated, for example. In addition, said "non-insoluble" means that the thermosetting catalyst which consists of a triphenylphosphine type compound is insoluble with respect to the solvent which consists of an epoxy resin, More specifically, it melt | dissolves 10 weight% or more in the range of temperature 10-40 degreeC. It means not.

It does not specifically limit as said triphenyl borane type compound, For example, tri (p-methylphenyl) borane etc. are mentioned. Moreover, what has a triphenyl phosphine structure is further included as a triphenyl borane type compound. It does not specifically limit as a compound which has the said triphenyl phosphine structure and a triphenyl borane structure, For example, tetraphenyl phosphonium tetraphenyl borate (brand name; TPP-K), tetraphenyl phosphonium tetra-p-triborate (brand name) TPP-MK), benzyl triphenyl phosphonium tetraphenyl borate (brand name; TPP-ZK), triphenyl phosphine triphenyl borane (brand name; TPP-S), etc. are mentioned (all are manufactured by Hokko Chemical Co., Ltd.).

It does not specifically limit as said amino-type compound, For example, monoethanolamine trifluoro borate (made by Stella Chemipa Co., Ltd.), dicyandiamide (made by Nakaraytex), etc. are mentioned.

It does not specifically limit as said trihalogen borane type compound, For example, trichloroborane etc. are mentioned.

In order to crosslink to some extent previously, the adhesive film 12 which concerns on this embodiment may add the polyfunctional compound which reacts with the functional group etc. of the molecular chain terminal of a polymer at the time of preparation, as a crosslinking agent. Thereby, the adhesive characteristic under high temperature is improved and heat resistance is improved.

As said crosslinking agent, a conventionally well-known thing can be employ | adopted. In particular, polyisocyanate compounds, such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1, 5- naphthalene diisocyanate, and the adduct of polyhydric alcohol and diisocyanate, are more preferable. As addition amount of a crosslinking agent, it is preferable to set it as 0.05-7 weight part normally with respect to 100 weight part of said polymers. If the amount of the crosslinking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 part by weight, cohesion is insufficient, which is not preferable. Moreover, you may make it contain together such polyisocyanate compound and other polyfunctional compounds, such as an epoxy resin, as needed.

Moreover, the inorganic filler can be mix | blended suitably with the adhesive film 12 according to the use. Mixing of an inorganic filler enables provision of conductivity, improvement of thermal conductivity, adjustment of elastic modulus, and the like. Examples of the inorganic filler include ceramics such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead and tin. And various inorganic powders made of metals such as zinc, palladium, solder, alloys, and other carbons. These can be used individually or in combination of 2 or more types. Among them, silica, in particular fused silica, is suitably used. Moreover, it is preferable that the average particle diameter of an inorganic filler exists in the range of 0.01-80 micrometers.

It is preferable to set the compounding quantity of the said inorganic filler to 0-80 weight part with respect to 100 weight part of organic components, and it is more preferable to set it to 0-70 weight part.

Moreover, the other additive can be mix | blended suitably with the adhesive film 12 as needed. As another additive, a flame retardant, a silane coupling agent, an ion trap agent, etc. are mentioned, for example. As said flame retardant, antimony trioxide, antimony pentoxide, a brominated epoxy resin etc. are mentioned, for example. These can be used individually or in combination of 2 or more types. As said silane coupling agent, (beta)-(3, 4- epoxycyclohexyl) ethyltrimethoxysilane, (gamma)-glycidoxy propyl trimethoxysilane, (gamma)-glycidoxy propylmethyl diethoxysilane, etc. are mentioned, for example. Can be. These compounds can be used individually or in combination of 2 or more types. As said ion trap agent, hydrotalcites, bismuth hydroxide, etc. are mentioned, for example. These can be used individually or in combination of 2 or more types.

Although the thickness of the adhesive film 12 is not specifically limited, For example, it is about 5-100 micrometers, Preferably it is about 5-70 micrometers.

The film 10 for semiconductor devices can be provided with antistatic ability. Thereby, generation | occurrence | production of the static electricity at the time of the adhesion | attachment and peeling, etc., breakage of a circuit by the charging of semiconductor wafer etc. by this, etc. can be prevented. The provision of the antistatic ability is a method of adding an antistatic agent or a conductive substance to the base material 13, the pressure-sensitive adhesive layer 14, or the adhesive film 12, and the conductive layer made of a charge transfer complex or a metal film to the base material 13. It can carry out by a suitable method, such as laying. As these systems, a system in which impurity ions that are likely to deteriorate the semiconductor wafer is hardly generated. Examples of conductive materials (conductive fillers) blended for the purpose of imparting conductivity, improving thermal conductivity, and the like, include silver, metal oxides such as spherical shapes such as aluminum, gold, copper, nickel, and conductive alloys, needle-shaped, flake-shaped metal powders, and alumina. , Amorphous carbon black, graphite, and the like. However, the said adhesive film 12 is preferable at the point which can prevent an electrically conductive thing from leaking electrically.

The adhesive film 12 is protected by the cover film 2. The cover film 2 has a function as a protective material which protects the adhesive film 12 until it is practically provided. The cover film 2 is peeled off when the semiconductor wafer is attached onto the adhesive film 12 of the adhesive film with a dicing sheet. As the cover film 2, a plastic film, paper, etc. surface-coated with peeling agents, such as polyethylene terephthalate (PET), polyethylene, a polypropylene, a fluorine-type peeling agent and a long-chain alkylacrylate type peeling agent, can also be used.

The tensile storage modulus Eb of the cover film 2 is preferably in the range of 1 to 5000 MPa, more preferably in the range of 50 to 4500 MPa, and even more preferably in the range of 100 to 4000 MPa. By setting the tensile storage modulus Eb of the cover film 2 to 1 MPa or more, the followability to the die bond film 12 of the cover film 2 can be further improved. In addition, by setting the tensile storage modulus Eb of the cover film 2 to 5000 MPa or less, the occurrence of folding in the cover film 2 at the time of bonding the adhesive film 12 to the cover film 2 can be further suppressed. It is possible to prevent the adhesive film 12 from being scratched or from mixing bubbles between the films.

As for the thickness of the cover film 2, 10-100 micrometers is preferable from a viewpoint of workability and conveyability, More preferably, it is 15-75 micrometers, More preferably, it is 25-50 micrometers.

Next, the manufacturing method of the film 10 for semiconductor devices which concerns on this embodiment is demonstrated below.

The manufacturing method of the film 10 for semiconductor devices which concerns on this embodiment forms the adhesive layer 14 on the base material 13, and manufactures the dicing film 11, and adhere | attaches on the base separator 22 Bonding the adhesive layer 14 and the adhesive film 12 of the dicing film 11 to the process of forming the film 12, the process of punching the adhesive film 12 according to the shape of the semiconductor wafer to which it adheres, The adhesive film 1 with a dicing sheet is made by peeling the base material separator 22 on the adhesive film 12, the process of laminating | stacking as a surface, the process of punching the dicing film 11 in the circular shape corresponding to the ring frame, and the like. And a step of bonding the adhesive film 1 with the dicing sheet to the cover film 2 at predetermined intervals.

The manufacturing process of the dicing film 11 is performed as follows, for example. First, the base material 13 can be formed into a film by a conventionally well-known film forming method. Examples of the film forming method include a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, and the like.

Next, after apply | coating an adhesive composition solution on the base material 13 and forming a coating film, the said coating film is dried (preheated crosslinking as needed), and the adhesive layer 14 is formed. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating etc. are mentioned. Moreover, as dry conditions, it can set suitably according to the thickness, material, etc. of a coating film. Specifically, it is performed within the range of a drying temperature of 80-150 degreeC and a drying time of 0.5 to 5 minutes, for example. Moreover, after apply | coating an adhesive composition on the 1st separator 21 and forming a coating film, you may dry the coating film on the said dry conditions, and may form the adhesive layer 14. FIG. Then, the adhesive layer 14 is bonded together with the 1st separator 21 on the base material 13. Thereby, the dicing film 11 in which the adhesive layer 14 was protected by the 1st separator 21 is produced (refer FIG. 3 (a)). The produced dicing film 11 may have a long shape wound in a roll shape. In this case, it is preferable to wind up while applying tensile tension in the longitudinal direction or the width direction so that loosening, winding shift | offset | difference, and position shift | offset | difference do not arise in the dicing film 11. However, by applying tensile tension, the dicing film 11 is wound into a roll shape in a state where tensile residual distortion remains. In addition, although the dicing film 11 may be extended by the said tension tension at the time of winding up of the dicing film 11, winding is not aiming for an extending | stretching operation.

As the adhesive layer 14, when it consists of an ultraviolet curable adhesive and employ | adopts ultraviolet-ray hardening previously, it forms as follows. That is, after apply | coating an ultraviolet curable adhesive composition on the base material 13, and forming a coating film, the said coating film is dried under predetermined conditions (heat crosslinking as needed), and an adhesive layer is formed. A coating method, coating conditions, and drying conditions can be performed similarly to the above. Moreover, after apply | coating an ultraviolet curable adhesive composition on the 1st separator 21 and forming a coating film, you may dry a coating film on the said dry conditions, and may form an adhesive layer. Thereafter, the pressure-sensitive adhesive layer is transferred onto the base material 13. Moreover, an ultraviolet-ray is irradiated to a pressure-sensitive adhesive layer under predetermined conditions. Although it does not specifically limit as irradiation conditions of an ultraviolet-ray, Usually, the inside of the range used as an integrated light quantity of 30-1000mJ / cm <2> is preferable, The inside of the range which becomes 50-800mJ / cm <2> is more preferable, The inside of the range which becomes 100-500mJ / cm <2> is further desirable. By adjusting the accumulated light amount within the above numerical range, the peel force F2 between the adhesive film 12 and the dicing film 11 can be controlled within the range of 0.08 to 10N / 100mm. When irradiation of an ultraviolet-ray is less than 30mJ / cm <2>, hardening of the adhesive layer 14 may become inadequate and peeling force with the adhesive film 12 may become large too much. As a result, adhesiveness with an adhesive film increases, and the pick-up property falls. In addition, glue residue may occur in the adhesive film after pick-up. On the other hand, when accumulated light amount exceeds 1000 mJ / cm <2>, the peeling force with the adhesive film 12 may become small too much. As a result, interfacial peeling may occur between the adhesive layer 14 and the adhesive film 12. As a result, chip scattering may occur at the time of dicing of a semiconductor wafer. In addition, thermal damage may be provided to the base material 13. Moreover, hardening of the adhesive layer 14 advances excessively, tensile elasticity modulus becomes large too much, and expandability falls. In addition, you may irradiate an ultraviolet-ray after the bonding process with the adhesive film 12 mentioned later. In this case, it is preferable to perform ultraviolet irradiation from the base material 13 side.

The manufacturing process of the adhesive film 12 is performed as follows. That is, the adhesive composition solution for forming the adhesive film 12 is apply | coated so that it may become predetermined thickness on the substrate separator 22, and a coating film is formed. Thereafter, the coating film is dried under predetermined conditions to form an adhesive film 12. It does not specifically limit as a coating method, For example, roll coating, screen coating, gravure coating etc. are mentioned. Moreover, as dry conditions, it can set suitably according to the thickness, material, etc. of a coating film. Specifically, it is performed within the range of a drying temperature of 70-160 degreeC and 1 to 5 minutes of drying time, for example. Moreover, after apply | coating an adhesive composition on the 2nd separator 23 and forming a coating film, you may dry the coating film on the said dry conditions, and may form the adhesive film 12. FIG. Thereafter, the adhesive film 12 is bonded together with the second separator 23 on the substrate separator 22. Thereby, the laminated | multilayer film by which the adhesive film 12 and the 2nd separator 23 were laminated | stacked sequentially on the base separator 22 is produced (refer FIG.3 (b)). This laminated film may have a long shape wound in a roll shape. In this case, it is preferable to wind up while applying tensile tension in the longitudinal direction or the width direction so that loosening, winding shift, and position shift may not occur in the adhesive film 12.

Next, the adhesive film 12 is punched in accordance with the shape of the semiconductor wafer to be attached, and bonded to the dicing film 11. Thereby, the adhesive film 1 with a dicing sheet is obtained. That is, while peeling the 1st separator 21 from the dicing film 11, the 2nd separator 23 is peeled from the punched adhesive film 12, the adhesive film 12 and the adhesive layer 14 are carried out. Are bonded to each other so as to be a bonding surface (see FIG. 3 (c)). At this time, crimping | bonding is performed with respect to at least one of the dicing film 11 or the adhesive film 12, applying tensile tension to a peripheral edge part. In addition, when the dicing film 11 is long wound by roll shape, it is preferable to convey with respect to the dicing film 11 without applying tensile tension to the maximum in the longitudinal direction. This is to suppress the tensile residual distortion of the film. However, you may apply tensile tension to the dicing film 11 within the range of 10-25 N from a viewpoint of preventing generation | occurrence | production of loosening, winding shift | offset | difference, position shift | offset | difference, a void (bubble), etc .. If it is in the said range, even if the tensile residual distortion remains in the dicing film 11, the interface peeling between the dicing film 11 and the adhesive film 12 can be prevented.

In addition, bonding of the dicing film 11 and the adhesive film 12 can be performed by crimping | bonding, for example. At this time, although lamination temperature is not specifically limited, Usually, 30-80 degreeC is preferable, 30-60 degreeC is more preferable, 30-50 degreeC is especially preferable. Moreover, although linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 1-10 kgf / cm is more preferable. With respect to the adhesive film 12 in which the glass transition temperature of an organic component exists in the range of -20-50 degreeC, an adhesive film is adjusted by laminating temperature and / or linear pressure in the said numerical range, respectively, and bonding with the dicing film 11 Peeling force F2 between (12) and dicing film 11 can be controlled in the range of 0.08-10N / 100mm. Here, for example, peeling force F2 between the dicing film 11 and the adhesive film 12 can be enlarged by making lamination temperature high in the said range. Moreover, peeling force F2 can also be enlarged also by making linear pressure large in the said range.

Subsequently, the base separator 22 on the adhesive film 12 is peeled off, and the cover film 2 is bonded while applying tensile tension. Subsequently, the dicing film 11 is punched in a circular shape corresponding to the ring frame at predetermined intervals. Thereby, the film 10 for semiconductor devices in which the precut adhesive film 1 with a dicing sheet was laminated | stacked on the cover film 2 at predetermined intervals is produced.

It is preferable to perform bonding of the adhesive film 12 in the adhesive film 1 with a dicing sheet to the cover film 2 by crimping | bonding. At this time, although lamination temperature is not specifically limited, Usually, 20-80 degreeC is preferable, 20-60 degreeC is more preferable, 20-50 degreeC is especially preferable. Moreover, although linear pressure is not specifically limited, Usually, 0.1-20 kgf / cm is preferable and 0.2-10 kgf / cm is more preferable. With respect to the adhesive film 12 in which the glass transition temperature of an organic component exists in the range of -20-50 degreeC, a lamination temperature and / or a linear pressure are adjusted in the said numerical range, respectively, and it bonds with the cover film 2, an adhesive film ( Peeling force F1 between 12) and cover film 2 can be controlled in the range of 0.025-0.075N / 100mm. Here, the peeling force F1 between the adhesive film 1 with a dicing sheet and the cover film 2 can be enlarged by making lamination temperature high in the said range, for example. Moreover, peeling force F1 can also be enlarged also by making linear pressure large in the said range. Moreover, about the cover film 2, it is preferable to convey, without adding tensile tension to the maximum in the longitudinal direction. This is to suppress the tensile residual distortion of the cover film 2. However, from a viewpoint of preventing generation | occurrence | production of loosening, winding shift | offset | difference, position shift | offset | difference, a void (bubble), etc. to the cover film 2, you may apply tensile tension within the range of 10-25N. If it is in the said range, even if the tensile residual distortion remains in the cover film 2, the film lifting phenomenon of the cover film 2 with respect to the adhesive film 1 with a dicing sheet can be prevented from occurring.

Moreover, the 1st separator 21 bonded on the adhesive layer 14 of the dicing film 11, the base material separator 22 of the adhesive film 12, and the 2nd bonded on the adhesive film 12 thereof The separator 23 is not particularly limited, and a conventionally known release treated film can be used. The first separator 21 and the second separator 23 each have a function as a protective material. In addition, the substrate separator 22 has a function as a substrate when the adhesive film 12 is transferred onto the pressure-sensitive adhesive layer 14 of the dicing film 11. The material constituting each of these films is not particularly limited, and conventionally known ones can be employed. Specifically, the plastic film, paper, etc. which were surface-coated with peeling agents, such as polyethylene terephthalate (PET), polyethylene, a polypropylene, a fluorine-type peeling agent and a long chain alkylacrylate type | system | group peeling agent, are mentioned.

The adhesive film of the present invention can be used as a die bond film or a film for flip chip type semiconductor back surface. A flip chip type semiconductor back surface film is used for forming on the back surface of a semiconductor element (for example, a semiconductor chip) flip-chip-connected on a to-be-adhered body (for example, various board | substrates, such as a lead frame and a circuit board). .

<Examples>

In the following, preferred embodiments of the present invention will be described in detail by way of example. However, unless otherwise indicated, the material, compounding quantity, etc. which are described in this Example are not the meaning which limits only the summary of this invention only to them. In addition, a part means a weight part.

(Example 1)

(Production of the pressure-sensitive adhesive layer of the dicing film)

In a reaction vessel equipped with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 76 parts of 2-ethylhexyl acrylate (2EHA), 24 parts of 2-hydroxyethyl acrylate (HEA), 0.2 parts of benzoyl peroxide and 60 parts of toluene It put in, and it superposed | polymerized at 61 degreeC for 6 hours in nitrogen stream, and obtained the acrylic polymer A of the weight average molecular weight 750,000. The molar ratio of 2EHA and HEA was 100 mol to 20 mol. The measurement of the weight average molecular weight is as above-mentioned.

10 parts (80 mol% with respect to HEA) of 2-methacryloyloxyethyl isocyanate (henceforth "MOI") are added to this acrylic polymer A, and addition reaction process is performed at 50 degreeC for 48 hours in air stream, And acrylic polymer A 'were obtained.

Next, with respect to 100 parts of acrylic polymer A ', 6 parts of isocyanate type crosslinking agents (brand name "Coronate L", Nippon Polyurethane Co., Ltd. product), and a photoinitiator (brand name "Irgacure 651", Ciba specialty chemicals) 4 parts) was added, and the adhesive solution was produced.

The adhesive solution prepared above was apply | coated on the surface which carried out the silicone process of PET peeling liner (1st separator), and it heat-crosslinked at 120 degreeC for 2 minutes, and formed the adhesive layer of thickness 30micrometer. Subsequently, a low density polyethylene resin (Sumikasen F218 manufactured by Sumitomo Chemical Co., Ltd.) was extruded by a T-die method, a sheet-like base material having a thickness of 40 µm was prepared, and bonded to the surface of the pressure-sensitive adhesive layer. Then, it preserve | saved for 24 hours at 50 degreeC.

Moreover, the said PET peeling liner was peeled off, and ultraviolet-ray was directly irradiated only to the part (circular shape of diameter 220mm) corresponded to the semiconductor wafer adhesion part (circular shape of diameter 200mm) of an adhesive layer. This produced the dicing film which concerns on a present Example. In addition, irradiation conditions are as follows.

<Irradiation condition of ultraviolet rays>

Ultraviolet (UV) Irradiation Device: High Pressure Mercury Lamp

UV irradiation integrated light quantity: 500mJ / ㎠

Output: 120W

Irradiation intensity: 200mW / ㎠

<Production of adhesive film>

228 parts of epoxy resin 1 (made by JER Corporation, Epicoat 1004), epoxy resin 2 (made by JER Corporation) with respect to 100 parts of acrylic rubber ("SG80H"; Nagase ChemteX Corporation) which have an epoxy group Epicoat 827) 206 parts, phenol resin (Mitsui Chemical Industries, Ltd., Mirex XLC-4L) 466 parts, spherical silica (Admatex Co., Ltd. product, brand name; SO-25R, average particle diameter) as an inorganic filler 0.5 micrometer) 667 parts and 3 parts of hardening catalysts (made by Shikoku Chemical Co., Ltd., C11-Z) were melt | dissolved in methyl ethyl ketone, and it adjusted so that it might become concentration 25weight%. Moreover, the tensile storage elastic modulus of the adhesive film in 23 degreeC was 1421 Mpa, and the glass transition temperature was 41.5 degreeC.

The solution of this adhesive composition was apply | coated with a fountain coater on a release process film (substrate separator), and an application layer was formed, and 150 degreeC and 10 m / s hot air were sprayed directly on this application layer for 2 minutes, and it dried. . This produced the 25-micrometer-thick adhesive film on the mold release process film. In addition, as a mold release process film (substrate separator), what carried out the silicone mold release process to the polyethylene terephthalate film (50 micrometers in thickness) was used.

<Production of adhesive film with dicing sheet>

Subsequently, the adhesive film was cut out into a circular shape having a diameter of 230 mm, and the pressure-sensitive adhesive layer and the adhesive film cut out into a circular shape were bonded to each other. Bonding uses a nip roll, bonding conditions are lamination temperature 50 degreeC, linear pressure 3kgf / cm, and also the base material separator on an adhesive film is peeled off, and as a mold release process film (cover film), the polyethylene terephthalate processed by silicone mold release The film (50 micrometers in thickness) was bonded. At this time, in order to prevent position shift, voids, etc. with respect to a cover film, the lamination temperature is not added but linear pressure is 2 kgf / cm, applying the tensile tension of 17N to MD direction using a dancer roll. It bonded together and produced the adhesive film with a dicing sheet.

<Production of film for semiconductor device>

Moreover, the film for semiconductor devices which concerns on this Example with which the adhesive film with 250 sheets of dicing sheet was bonded by space | interval of 10 mm was obtained by punching a dicing film in circular shape of diameter 270mm so that an adhesive film might become the center.

(Example 2)

<Production of dicing film>

The dicing film which concerns on a present Example used the same thing as Example 1 except having bonded the 100 micrometers polyolefin film (base material) to the said adhesive layer.

<Production of adhesive film>

Epoxy to 100 parts of acrylic ester polymers (manufactured by Negami Kogyo Co., Ltd., trade name; Paraclone W-197CM, Tg: 18 ° C, weight average molecular weight: 400,000) containing ethyl acrylate-methyl methacrylate as a main component 434 parts of resin (Nipbon Kayaku Co., Ltd. make, brand name; EOCN-1027), a phenol resin (Mitsui Chemical Co., Ltd. product, Mirex XLC-4L) 466 parts, an inorganic filler, spherical silica (Admatex ( 1500 parts of manufacture), brand name; SO-25R, average particle diameter: 0.5 micrometer), and 3 parts of hardening catalysts (made by Shikoku Kasei Co., Ltd., C11-Z) were dissolved in methyl ethyl ketone, and it adjusted so that it might become 20 weight% of concentration. Moreover, the tensile storage elastic modulus of the adhesive film in 23 degreeC was 517 Mpa, and the glass transition temperature was 47.5 degreeC.

The solution of this adhesive composition was apply | coated with a fountain coater on a release process film (substrate separator), and an application layer was formed, and 150 degreeC and 10 m / s hot air were sprayed directly on this application layer for 2 minutes, and it dried. . This produced the 25-micrometer-thick adhesive film on the mold release process film. In addition, as a mold release process film (substrate separator), what carried out the silicone mold release process to the polyethylene terephthalate film (50 micrometers in thickness) was used.

<Production of adhesive film with dicing sheet>

The adhesive film was cut out in a circular shape having a diameter of 230 mm, and the pressure-sensitive adhesive layer and the adhesive film cut out in a circular shape were bonded to each other. Moreover, the adhesive film with a dicing sheet was produced by peeling the base material separator on an adhesive film and bonding the polyolefin film (25 micrometers in thickness) processed by silicone mold release as a mold release process film (cover film). Joining conditions were the same as in Example 1.

<Production of film for semiconductor device>

Moreover, the film for semiconductor devices which concerns on this Example with which the adhesive film with 250 sheets of dicing sheet was bonded by space | interval of 100 mm was obtained by punching a dicing film in circular shape of diameter 270mm so that an adhesive film might become the center.

(Example 3)

<Production of dicing film>

The dicing film which concerns on a present Example is the same as that of Example 1 except having used the adhesive tape base material (100 micrometers in thickness) which consists only of random polypropylene resin (MFR: 2g / 10min, ethylene component content: 60weight%) as an adhesive layer. The same was used. Moreover, the corona treatment was given to one side of the adhesive tape base material. Subsequently, the polyolefin film (base material) of thickness 100micrometer was bonded to the surface of the said adhesive layer. Then, it preserve | saved for 24 hours at 50 degreeC.

<Production of adhesive film>

434 parts of epoxy resins (Nipbon Kayaku Co., Ltd. make, brand name; EOCN-1027) with respect to 100 parts of acrylic rubbers (made by Nagase Chemtex Co., Ltd., brand name: SG-708-6), phenol resin (Mitsui Chemical Industries, Ltd.) 429 parts of spherical silica (Admatex Co., Ltd. make, brand name; SO-25R, average particle diameter: 0.5 micrometer) as an inorganic filler was prepared by dissolving 466 parts of Mirex XLC-LL) and concentration 25 The weight was adjusted to be%. Moreover, the tensile storage elastic modulus of the adhesive film in 23 degreeC was 2320 Mpa, and the glass transition temperature was 38.9 degreeC.

The solution of this adhesive composition was apply | coated with a fountain coater on a release process film (substrate separator), and an application layer was formed, and 150 degreeC and 10 m / s hot air were sprayed directly on this application layer for 2 minutes, and it dried. . This produced the 25-micrometer-thick adhesive film on the mold release process film. In addition, as a mold release process film (substrate separator), what carried out the silicone mold release process to the polyethylene terephthalate film (50 micrometers in thickness) was used.

<Production of adhesive film with dicing sheet>

The adhesive film was cut out in a circular shape having a diameter of 230 mm, and the pressure-sensitive adhesive layer and the adhesive film cut out in a circular shape were bonded to each other. Moreover, the base material separator on an adhesive film was peeled off, and low-density polyethylene resin (Sumikasen F218 by Sumitomo Chemical Co., Ltd.) was extruded by a T-die method as a mold release process film (cover film), and the film which made the sheet | seat of 25 micrometers in thickness is bonded. By doing this, the adhesive film with a dicing sheet was produced. Joining conditions were the same as in Example 1.

<Production of film for semiconductor device>

Moreover, the film for semiconductor devices which concerns on this Example with which the adhesive film with 250 sheets of dicing sheet was bonded by space | interval of 10 mm was obtained by punching a dicing film in circular shape of diameter 270mm so that an adhesive film might become the center.

(Comparative Example 1)

<Production of film for semiconductor device>

As a cover film, the film for semiconductor devices which concerns on this comparative example was produced like Example 1 except having used the polyethylene terephthalate film by which the silicone release process of 100 micrometers in thickness was used.

(Comparative Example 2)

<Production of dicing film>

The dicing film which concerns on this comparative example is a thing similar to Example 1 except having used 130 micrometers of adhesive tape base materials which consist only of random polypropylene resin (MFR: 1.7 g / 10min, ethylene component content: 75 weight%) as an adhesive layer. Used.

<Production of adhesive film>

The adhesive film similar to Example 3 was used for the adhesive film which concerns on this comparative example.

<Production of adhesive film with dicing sheet>

The adhesive film was cut out in a circular shape having a diameter of 230 mm, and the pressure-sensitive adhesive layer and the adhesive film cut out in a circular shape were bonded to each other. Moreover, the adhesive film with a dicing sheet was produced by peeling the base-material separator on an adhesive film and bonding the 25-micrometer-thick silicone-releasing-processed polyolefin film as a mold release process film (cover film). Joining conditions were the same as in Example 1.

<Production of film for semiconductor device>

Moreover, the film for semiconductor devices which concerns on this comparative example which bonded 250 dicing sheets adhesive films with a space | interval of 100 mm was obtained by punching a dicing film in circular shape of diameter 270mm so that an adhesive film might become the center.

(Tension Storage Modulus Ea of Dicing Film at 23 ° C)

The dicing film of each Example and the comparative example was measured for tensile storage elastic modulus in 23 degreeC before hardening of a dicing film using the viscoelasticity measuring apparatus (made by Reimetrics company: model: RSA-II). More specifically, a measurement sample having a length of 30.0 mm x width 5.0 mm and a cross-sectional area of 0.125 to 0.9 mm 2 is set in a film tension measurement jig, and the frequency 10.0 Hz, distortion of 0.025%, and temperature rising rate in a temperature range of -30 ° C to 100 ° C. It measured under the conditions of 10 degree-C / min.

(Tension Storage Modulus Eb of Cover Film at 23 ° C)

About the cover film of each Example and the comparative example, the tensile elasticity modulus in 23 degreeC was measured using the viscoelasticity measuring apparatus (Leometrics company make: model: RSA-II). More specifically, the sample size was set to 30 mm in length x 5 mm in width, and the measurement sample was set in a film tension measurement jig, and the frequency was 1.0 Hz, the distortion was 0.025%, and the temperature increase rate was 10 ° C / in the temperature range of -30 to 280 ° C. It measured under the conditions of minutes.

Tensile Storage Modulus of Adhesive Film at 23 ° C

About the adhesive film of each Example and the comparative example, the tensile elasticity modulus in 23 degreeC was measured using the viscoelasticity measuring apparatus (Leometrics company make: model: RSA-II). More specifically, the sample size is set to 30 mm in length x 5 mm in width, the measurement sample is set in a film tension measurement jig, and the frequency is 10.0 Hz, the distortion is 0.025%, and the temperature increase rate is 10 ° C./min in the temperature range of -30 to 280 ° C. It was measured under the conditions of.

(Glass transition temperature)

The glass transition temperature of each Example and a comparative example used the viscoelasticity measuring apparatus (The Rheometry Co., Ltd., model: RSA-II), The frequency 10.0Hz, the distortion 0.025%, the temperature increase rate 10 in the temperature range of -30 degreeC-250 degreeC Tanδ (G "(loss modulus) / G '(storage modulus)) measured under the conditions of ° C / min was taken as the temperature at which the maximum value was shown.

(Evaluation of pickup)

The cover film was peeled from each film for semiconductor devices, and the semiconductor wafer was mounted on the adhesive film. As a semiconductor wafer, the thing of 8 inches in size and thickness of 75 micrometers was used. The mounting conditions of the semiconductor wafer were the same as above.

Subsequently, the semiconductor wafer was diced according to the following conditions, and 30 semiconductor chips were formed. In addition, the semiconductor chip was picked up together with the die bond film. The pickup was performed for 30 semiconductor chips (5 mm in length x 5 mm in width), and the success rate was calculated by counting the cases where the pickup of the semiconductor chip was successful without damage. The results are shown in Table 1 below. Pickup conditions are as follows.

<Dicing Condition>

Dicing Method: Step Cut

Dicing apparatus: DISCO DFD6361 (brand name, a disco company)

Dicing Speed: 50mm / sec

Dicing blade: Z1; Disco company production "NBC-ZH2030-SE27HDD"

Z2; Disco company "NBC-ZH2030-SE27HBB"

Dicing blade rotation speed: Z1; 50,000 rpm, Z2; 50,000 rpm

Dicing tape cutting depth: 20 μm

Wafer Chip Size: 5mm × 5mm

<Pickup condition>

Pickup device: Brand name `` SPA-300 '' manufactured by Shinkawa Corporation

Number of needles: 5

Lifting amount: 400㎛

Lifting speed: 10mm / sec

Pulling volume: 3mm

<Evaluation of voids by wound wound transcription after freezing preservation>

The film for semiconductor devices obtained by each Example and the comparative example was wound up in roll shape with winding tension 2 kg. And in this state, it was left to stand for two weeks in the refrigerator of temperature -30 degreeC. Then, after returning to room temperature, the roll was unwinded and the semiconductor wafer was mounted using the 100th sheet adhesive film with a dicing sheet, and the presence or absence of the void was visually confirmed. As a semiconductor wafer, the thing of 8 inches in size and thickness of 75 micrometers was used. In addition, joining conditions were as follows. The results are shown in Table 1.

<Join conditions>

Adhesion apparatus: ACC Corporation make, brand name; RM-300

Attachment Speed: 20mm / sec

Attachment pressure: 0.25MPa

Attachment temperature: 60 ℃

<Returnability in Automatic Attachment Machine>

Using MA-3000III manufactured by Nitto Seiki Co., Ltd., the adhesive film with the dicing sheet was attached to 100 wafers, and the number of troubles such that the device was paused was measured. The adhesion conditions were adhesion rate: 20 mm / sec, adhesion pressure: 0.25 MPa, and adhesion temperature: 60 degreeC.

Moisture Reliability Evaluation

The film for semiconductor devices used for the cryopreservation test was mounted, diced, and picked up on the above conditions. Subsequently, the semiconductor element was die-bonded to the bismaleimide-triazine resin board | substrate on 120 degreeC * 500 gf * 1 second conditions, and the thermal history was applied at 180 degreeC for 1 hour. Next, these were molded using a mold machine (Model-Y-serise, manufactured by TOWA). Specifically, the epoxy-based sealing resin (Nitto Denko Co., HC-300B6) was used and molded at 175 ° C. at 3 seconds of preheat setting, 12 seconds of injection time, and 120 seconds of curing time. Then, it heat-hardened on the conditions of 175 degreeC and 5 hours, and obtained the semiconductor package. This package was hygroscopically treated for 192 hours in a constant temperature and humidity chamber (30 degreeC, 60% RH), and it injected into the IR reflow apparatus SAI-2604M (made by Senju Kinjoku Kogyo) three times repeatedly. The package surface peak temperature at that time was adjusted to be 260 degreeC. The presence or absence of peeling was observed with an ultrasonic exploration imaging apparatus (FS-200 manufactured by Hitachi Genki Fine Tech), and then the center of the package was cut and the cut surface was polished, and then the cross section of the package was observed using an optical microscope manufactured by Keyence. The thing which peeled off was recognized as (circle) and the thing which peeled off was made into x.

(result)

As is apparent from Table 1, in the film for semiconductor device manufacture of Examples 1, 2, and 3, even if it preserve | saved for two weeks in the freezer of temperature -30 degreeC, the void by winding wound transcription | transfer was not confirmed. Moreover, there was no conveyance trouble to an apparatus, mountability, dicing, and pickup property were favorable, and peeling was not seen even in the moisture absorption reliability test.

On the other hand, in the film for semiconductor devices of the comparative example 1, the film lifting of the cover film and the folding of the film occurred at the time of semiconductor wafer mounting. Moreover, when it stored for two weeks in the freezer of temperature -30 degreeC, the void by winding wound transcription was confirmed. Moreover, when the moisture absorption reliability test of the film wound by the transfer trace was carried out, the void by the wound trace transfer was confirmed.

In the film for semiconductor devices of the comparative example 2, when it preserve | saved for two weeks in the freezer, the void by winding wound transcription was confirmed. Moreover, although the pick-up success rate was 100%, chip scattering occurred. Moreover, when the moisture absorption reliability test of the film wound by the transfer trace was carried out, the void by the wound trace transfer was confirmed.

1: adhesive film with dicing sheet
2: cover film
10: film for semiconductor devices
11: dicing film
12: adhesive film
13: description
14: adhesive layer
21: first separator
22: substrate separator
23: second separator

Claims (7)

The adhesive film with a dicing sheet in which the adhesive film was laminated | stacked on the dicing film is a film for semiconductor devices laminated | stacked on the cover film at predetermined intervals,
The ratio Ea / Eb of the tensile storage elastic modulus Ea of the dicing film at 23 degreeC, and the tensile storage elastic modulus Eb of the cover film at 23 degreeC exists in the range of 0.001-100, The film for semiconductor devices. The film for semiconductor devices according to claim 1, wherein the adhesive film has a glass transition temperature in the range of 0 to 100 ° C and a tensile storage modulus at 23 ° C before curing in the range of 50 MPa to 5000 MPa. The film for semiconductor devices according to claim 1, wherein the cover film has a thickness of 10 to 100 µm. The film for semiconductor devices according to claim 1, wherein the dicing film has a thickness of 25 to 180 µm. The semiconductor device film according to claim 1, wherein the tensile storage modulus Ea of the dicing film at 23 ° C is 1 to 500 MPa. The film for semiconductor devices according to claim 1, wherein the tensile storage modulus Eb of the cover film at 23 ° C is 1 to 5000 MPa. The semiconductor device manufactured using the film for semiconductor devices in any one of Claims 1-6.

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