JPWO2013015012A1 - Base film for semiconductor processed sheet, semiconductor processed sheet, and method for manufacturing semiconductor device - Google Patents

Abstract

Consists of a resin layer (A) comprising a resin composition containing 10 to 70% by mass of an olefin resin having a resin density of 0.870 to 0.900 g / cm ³ and a heat flow rate at a melting peak of 2.5 W / g or less. Semiconductor processed sheet (1) provided with the base film (2) made and the adhesive bond layer (3) laminated | stacked on the single side | surface of the base film (2). Such a semiconductor processed sheet (1) has a good pickup performance and can suppress a decrease in the pickup performance over time.

Description

  The present invention relates to a semiconductor processing sheet used for semiconductor processing, for example, dicing and die bonding, a base film used for the semiconductor processing sheet, and a method of manufacturing a semiconductor device using them.

  Semiconductor wafers such as silicon and gallium arsenide, and various packages (hereinafter, these may be collectively referred to as “objects to be cut”) are manufactured in a large diameter state. And then separated (pickup) and then transferred to the next mounting step. At this time, an object to be cut such as a semiconductor wafer is attached to a pressure-sensitive adhesive sheet in advance, and is subjected to dicing, cleaning, drying, expanding, pick-up, and mounting processes.

  Conventionally, a dicing sheet in which an adhesive layer is formed on a base film is used as a semiconductor processing sheet in a process from a dicing process of a workpiece to a pickup process. Specifically, the object to be cut is subjected to dicing while being fixed to the dicing sheet via the adhesive layer, and the chip after dicing is picked up from the adhesive layer of the dicing sheet.

  On the other hand, in order to simplify the processes of the pick-up process and the mounting process, a dicing die-bonding sheet may be used as a semiconductor processing sheet having both a dicing function and a function for bonding chips. When such a sheet is used, the object to be cut is subjected to dicing while being fixed to the base film via the adhesive layer, and the chip after dicing is picked up together with the adhesive layer from the base film. . Next, the adhesive layer attached to the chip is used to bond (mount) the chip to a substrate or the like. Examples of such a dicing die bonding sheet include those disclosed in Patent Documents 1 to 3.

  In the dicing die bonding sheet as described above, in order to pick up a chip with an adhesive layer, it is required that the substrate film and the adhesive layer have good peelability.

JP-A-2-32181 JP 2006-156754 A JP 2007-012670 A

  However, in the conventional dicing die bonding sheet, particularly when the sheet is stored for a long period of time, the adhesive layer and the base film adhere to each other over time, and as a result, the peelability between the base film and the adhesive layer is improved. In some cases, the chip could not be satisfactorily picked up.

  In particular, in recent years, as semiconductor devices have become smaller and thinner, semiconductor chips mounted on the semiconductor devices have also become thinner, so that the peelability between the base film and the adhesive layer is reduced as described above. Then, not only is it difficult to pick up the chip, but in some cases, the chip is broken or chipped.

  The present invention has been made in view of the above circumstances, and has a good pick-up performance and can suppress a deterioration of the pick-up performance over time and a base film for a semiconductor processed sheet and a semiconductor An object is to provide a processed sheet.

In order to achieve the above object, first, the present invention is a base film for a semiconductor processed sheet comprising a single layer or multiple layers of resin layers, wherein at least one of the resin layers has a resin density of 0.00. A resin layer (A) comprising a resin composition containing 870 to 0.900 g / cm ³ and an olefin resin having a heat flow rate of 2.5 W / g or less at a melting peak of 10 to 70% by mass. A base film for a semiconductor processed sheet is provided (Invention 1).

  Although the semiconductor processed sheet which concerns on this invention can be preferably used especially as a dicing die-bonding sheet | seat, it is not limited to this. In addition, what has another base material and adhesive layer for sticking a ring frame is also contained in the semiconductor processed sheet which concerns on this invention. Further, the “sheet” in the present invention includes the concept of “tape”.

  The base film for a semiconductor processed sheet according to the invention (Invention 1) has a good pickup performance by including the resin layer (A) made of the resin composition, and the pickup performance is lowered over time. Can be suppressed.

  The base film for a semiconductor processed sheet according to the invention (Invention 1) includes the resin layer (A) and a resin layer (B) made of a material other than the resin composition constituting the resin layer (A). It may consist of two layers (Invention 2).

  In the said invention (invention 1 and 2), it is preferable that heat of fusion (DELTA) H of the said olefin resin is 85.0 J / g or less (invention 3).

  In the said invention (invention 1-3), it is preferable that the said resin composition which comprises the said resin layer (A) consists of the said olefin resin and olefin resins other than the said olefin resin (invention 4). .

  In the said invention (invention 1-4), it is preferable that the softening temperature of the said resin layer (A) is 90-120 degreeC (invention 5).

  In the said invention (invention 2-5), it is preferable that the said resin layer (B) consists of a resin composition which has ethylene- (meth) acrylic acid copolymer as a main component (invention 6).

  In the said invention (invention 6), it is preferable that content of the (meth) acrylic acid as a structural component in the ethylene- (meth) acrylic acid copolymer of the said resin layer (B) is 5-20 mass% ( Invention 7).

  The base film for a semiconductor processing sheet according to the above inventions (Inventions 1 to 7) is a base film for a semiconductor processing sheet comprising a base film and an adhesive layer laminated on one side of the base film. (Invention 8).

  In the said invention (invention 8), it is preferable that the said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent (invention 9).

  2ndly this invention provides the semiconductor processed sheet provided with the said base film for semiconductor processed sheets (invention 1-9) and the adhesive bond layer laminated | stacked on the single side | surface of the said base film for semiconductor processed sheets. (Invention 10).

  In the said invention (invention 10), it is preferable that the said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent (invention 11).

  In the said invention (invention 10 and 11), it is preferable that the said resin layer (A) in the said base film for semiconductor processed sheets is in contact with the said adhesive bond layer (invention 12).

  3rdly, this invention sticks the said semiconductor processing sheet to a semiconductor wafer via the said adhesive bond layer of the semiconductor processing sheet provided with the base film and the adhesive bond layer laminated | stacked on the single side | surface of the said base film. Then, the step of cutting the semiconductor wafer into semiconductor chips, the step of peeling both at the interface between the base film for semiconductor processed sheet and the adhesive layer, to form a chip with the adhesive layer, A semiconductor processing sheet for use in a method for manufacturing a semiconductor device, comprising a step of adhering a chip with an adhesive layer to a circuit board via the adhesive layer, wherein the base film is the semiconductor processing sheet Provided is a processed semiconductor sheet (Invention 13), which is a base material film (Invention 1 to 9).

  Fourthly, the present invention provides a process for attaching the semiconductor processed sheet (Inventions 10 to 12) to a semiconductor wafer via the adhesive layer, and then cutting the semiconductor wafer into semiconductor chips; The process of peeling both at the interface between the base film and the adhesive layer to form a chip with the adhesive layer, and bonding the chip with the adhesive layer to the circuit board via the adhesive layer A method of manufacturing a semiconductor device, comprising: a step of performing (Invention 14).

  The base film for semiconductor processed sheets and the semiconductor processed sheet according to the present invention have good pickup performance, and can suppress the deterioration of the pickup performance over time.

It is sectional drawing of the semiconductor processed sheet which concerns on the 1st Embodiment of this invention. It is sectional drawing of the semiconductor processing sheet which concerns on the 2nd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described.
[First Embodiment]
FIG. 1 is an example of a cross-sectional view of a semiconductor processed sheet according to the first embodiment of the present invention. As shown in FIG. 1, the semiconductor processed sheet 1 which concerns on this embodiment is equipped with the base film 2 and the adhesive bond layer 3 laminated | stacked on the single side | surface (upper surface in FIG. 1) of the base film 2. As shown in FIG. In addition, before using the semiconductor processed sheet 1, in order to protect the adhesive layer 3, it is preferable to laminate a peelable release sheet on the exposed surface (the upper surface in FIG. 1) of the adhesive layer 3. The semiconductor processed sheet 1 can take any shape such as a tape shape or a label shape.

The base film 2 in this embodiment consists of a single layer resin layer (A). This resin layer (A) has a resin density of 0.870 to 0.900 g / cm ³ and a heat flow rate at the melting peak of 2.5 W / g or less (hereinafter referred to as “olefin resin D”). May be formed by molding a resin composition containing 10 to 70% by mass.

  Here, the resin density in this specification is a value obtained by measurement according to JIS K7112. Further, in this specification, the heat flow rate at the melting peak is a value obtained by a differential scanning calorimeter (DSC) (in the test example, model number: Q2000 manufactured by TA Instruments Inc.). In this embodiment, using DSC, the sample is heated from −40 ° C. to 250 ° C. at a rate of 20 ° C./min, rapidly cooled to −40 ° C., and again raised to 250 ° C. at a rate of 20 ° C./min. After heating and holding at 250 ° C. for 5 minutes, the temperature is lowered to −40 ° C. at a rate of 20 ° C./min to obtain a melting curve showing a melting peak. From the obtained melting curve, the heat flow rate at the melting peak and A heat of fusion ΔH described later is calculated.

  By using the base film 2 made of the resin layer (A) obtained by molding a resin composition containing a predetermined amount of the olefin resin D having a specified heat density at the resin density and melting peak as described above, a semiconductor processed sheet 1 has good releasability between the base film 2 and the adhesive layer 3, that is, has good pickup performance, and can suppress deterioration of the pickup performance over time. The reason why such an effect is obtained is not necessarily clear, but it is considered that the crystallinity of the olefin resin D that defines the density and the heat flow rate at the melting peak contained in the resin composition contributes.

The density of the olefin resin D in this embodiment is as 0.870~0.900g / cm ³ of the above, preferably 0.890~0.900g / cm ^3, particularly preferably 0.895～ 0.900 g / cm ³ . When the density of the olefinic resin D is less than 0.870 g / cm ³ , the resin composition containing the olefinic resin D is tacky. Therefore, when the resin composition is molded, clogging occurs in the hopper portion, or the molded film If the film is wound, troubles such as blocking of the films will occur. On the other hand, when the density of the olefin resin D exceeds 0.900 g / cm ³ , the peelability between the base film 2 and the adhesive layer 3 decreases with time, and the pickup of the adhesive layer 3 to the base film 2 is performed. The force rises, and the above-mentioned good pickup performance and its continuity effect cannot be obtained.

  In the present embodiment, the heat flow rate at the melting peak of the olefin resin D is 2.5 W / g or less as described above, and preferably 2.3 W / g or less. When the heat flow rate at the melting peak exceeds 2.5 W / g, good pickup performance cannot be obtained. Moreover, it is preferable that the minimum of the heat flow rate in the melting peak of the olefin resin D in this embodiment is 1.0 W / g. When the heat flow rate at the melting peak is 1.0 W / g or less, the surface of the resin layer (A) starts to become sticky, and when the resin composition is molded or used for forming an adhesive layer on the molded base film 2 When the coating liquid is applied to form the adhesive layer 3, the handling property may be significantly reduced.

  The reason why the above effect can be obtained is not necessarily clear, but if the heat flow rate at the melting peak is 2.5 W / g or less, the molecular weight distribution of the olefin resin D is broadened to some extent, whereby the resin layer ( The crystallinity of A) is suppressed, and a low molecular weight component is transferred between the adhesive layer 3 and it is considered that good pickup performance is exhibited.

  Further, the heat of fusion ΔH of the olefin resin D in the present embodiment is preferably 85.0 J / g or less, particularly preferably 83.0 J / g or less, and more preferably 80.0 J / g or less. Preferably there is. If the heat of fusion ΔH of the olefin resin D exceeds 85.0 J / g, good pickup performance may not be obtained. The lower limit of the heat of fusion ΔH is naturally determined by the relationship with the density and the skeleton of each resin, but is theoretically preferably 0.

  As the olefin-based resin D, a homopolymer or copolymer obtained by polymerizing one or more selected from olefin monomers having a heat flow rate at a density and a melting peak within the above ranges is preferable. Examples of the olefin monomer include olefin monomers having 2 to 18 carbon atoms and α-olefin monomers having 3 to 18 carbon atoms. Examples of such olefin monomers include olefin monomers having 2 to 8 carbon atoms such as ethylene, propylene, 2-butene, octene; propylene, 1-butene, 4-methyl-1-pentene, 1- Examples include α-olefin monomers such as hexene, 1-octene, 1-decene, 1-dodecene, 1-tetradecene, and 1-octadecene. The olefin resin D, which is a homopolymer or copolymer of these olefin monomers, can be used singly or in combination of two or more.

  The olefin resin D is preferably an ethylene homopolymer or copolymer, and more preferably a copolymer of ethylene and an α-olefin monomer. The above-mentioned thing is mentioned as an alpha olefin monomer. Among the olefin resins D, ethylene homopolymer or copolymer (hereinafter referred to as “polyethylene”) containing 60 to 100% by mass, particularly 70 to 99.5% by mass of ethylene as a monomer unit. Is preferred).

In this specification, a density of 0.870 g / cm ³ or more, the polyethylene of less than 0.910 g / cm ³ as ultra low density polyethylene (VLDPE). In the present embodiment, it is preferable to select an olefin resin D having a density of 0.870 to 0.900 g / cm ³ among the ultra-low density polyethylene. Such ultra-low density polyethylene is easily available as the olefin resin D that satisfies the above conditions.

  The resin composition which comprises a resin layer (A) contains 8-70 mass% of the said olefin resin D, Preferably it contains 10-65 mass%, Most preferably, it contains 10-50 mass%. When the content of the olefin resin D is less than 8% by mass, the above-described good pickup performance and its continuity effect cannot be obtained. Moreover, since the elasticity modulus of the base film 2 obtained will fall when content of the said olefin resin D exceeds 70 mass%, when performing secondary processing etc., a problem will arise regarding handling property. . Furthermore, when the content of the olefin resin D exceeds 70% by mass, blocking occurs in the wound base film 2 due to the low density of the olefin resin D, and the surface of the base film 2 is blocked. In addition to leaving marks, handling properties when the base film 2 or the semiconductor processed sheet 1 is unwound from a roll may be deteriorated.

  As described above, the resin layer (A) contains 8 to 70% by mass of the olefin resin D. As a component other than the olefin resin D, an olefin resin other than the olefin resin D (hereinafter referred to as “olefin system”). It may be preferable to contain “resin E”.

That is, the olefin resin E is a resin that does not satisfy one or both of the requirement that the resin density is 0.870 to 0.900 g / cm ^{3 and} the requirement that the heat flow rate at the melting peak is 2.5 W / g or less. Examples of the olefin resin E include polyethylene (ethylene homopolymer or copolymer containing 60 to 100% by mass, particularly 70 to 99.5% by mass of ethylene as a monomer unit), propylene-butene copolymer. A polymer or the like having a density of 0.910 g / cm ³ or more and less than 0.920 g / cm ³ is preferable. As the ethylene copolymer, for example, an ethylene-propylene copolymer, an ethylene-butene copolymer, and the like are preferable. Among these, polyethylene having a density of 0.915 to 0.918 g / cm ³ (hereinafter sometimes referred to as “low density polyethylene”) is more preferable. Such an olefin resin E such as low density polyethylene has an advantage of high compatibility with the olefin resin D.

  The thickness of the base film 2 is usually 20 to 500 μm, preferably 30 to 200 μm, more preferably 40 to 150 μm.

  The base film 2 can be manufactured by a conventional method. For example, the olefin resin D and the olefin resin E are kneaded, and the pellets are directly formed from the kneaded material or once after pellets are formed by extrusion or the like. can do. The temperature at the time of kneading is preferably 180 to 230 ° C.

  The resin composition (resin layer (A) in the present embodiment) constituting the base film 2 preferably has a softening temperature of 90 to 120 ° C, particularly preferably 100 to 115 ° C. When the softening temperature of the resin layer (A) is 90 ° C. or higher, the base film 2 is less likely to be blocked, and good handling properties of the base film 2 or the semiconductor processed sheet 1 can be ensured. . In addition, if the softening temperature of the resin layer (A) is 120 ° C. or higher, the base film 2 is necked in the expanding process after dicing, and the chip interval may not be uniformly expanded.

  Here, the softening temperature in the present specification is a value obtained by a Koka type flow tester (in the test example, Shimadzu Corporation, model number: CFT-100D is used). Specifically, when the load was 9.81 N, a die having a hole shape of φ2.0 mm and a length of 5.0 mm was used and measurement was performed at a temperature rising rate of 10 ° C./min, the stroke began to change. The temperature is defined as the softening temperature.

  The material constituting the adhesive layer 3 is not particularly limited as long as it has both a wafer fixing function and a die bonding function. Examples of the material constituting the adhesive layer 3 include those composed of a thermoplastic resin and a low molecular weight thermosetting adhesive component, and materials composed of a B-stage (semi-cured) thermosetting adhesive component. Used. Thermoplastic resins include acrylic polymer, polyester resin, urethane resin, phenoxy resin, polybutene, polybutadiene, polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, ethylene (meth) acrylic acid copolymer, ethylene (meth) acrylic acid. An ester copolymer, polystyrene, polycarbonate, polyimide and the like can be mentioned. Among them, an acrylic polymer is preferable from the viewpoint of adhesiveness and film forming property (sheet processability). Thermosetting adhesive components include epoxy resins, polyimide resins, phenolic resins, silicone resins, cyanate resins, bismaleimide triazine resins, allylated polyphenylene ether resins (thermosetting PPE), formaldehyde resins, Saturated polyester or a copolymer thereof may be used, and among them, an epoxy resin is preferable from the viewpoint of adhesiveness. As a material constituting the adhesive layer 3, a material containing an acrylic polymer (a), an epoxy resin (b), and a curing agent (c) is particularly preferable.

  There is no restriction | limiting in particular as an acrylic polymer (a), A conventionally well-known acrylic polymer can be used. The weight average molecular weight (Mw) of the acrylic polymer (a) is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. If the Mw of the acrylic polymer (a) is too low, the peelability between the adhesive layer 3 and the base film 2 is lowered, and chip pick-up failure may occur. If the Mw of the acrylic polymer (a) is too high, the adhesive layer 3 may not be able to follow the unevenness of the adherend, which may cause generation of voids and the like. In addition, the weight average molecular weight (Mw) in this specification is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method.

  The glass transition temperature (Tg) of the acrylic polymer (a) is preferably −60 to 70 ° C., and more preferably −30 to 50 ° C. If the Tg of the acrylic polymer (a) is too low, the peelability between the adhesive layer 3 and the base film 2 is lowered, and chip pick-up failure may occur. If the Tg of the acrylic polymer (a) is too high, the adhesive force for fixing the wafer may be insufficient.

  Examples of the monomer constituting the acrylic polymer (a) include a (meth) acrylic acid ester monomer or a derivative thereof. More specifically, for example, methyl (meth) acrylate, ethyl (meth) acrylate, ( (Meth) acrylic acid alkyl ester having 1 to 18 carbon atoms of alkyl group such as meth) propyl acrylate and butyl (meth) acrylate; (meth) acrylic acid cycloalkyl ester, (meth) acrylic acid benzyl ester, (Meth) acrylic acid esters having a cyclic skeleton such as isobornyl (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, and imide (meth) acrylate ; Hydroxymethyl (meth) acrylate , 2-hydroxyethyl (meth) acrylate, 2-hydroxyl-containing, such as hydroxypropyl (meth) acrylate (meth) acrylic acid ester; glycidyl acrylate and glycidyl methacrylate. Moreover, you may use the unsaturated monomer containing carboxyl groups, such as acrylic acid, methacrylic acid, and itaconic acid. These may be used individually by 1 type and may use 2 or more types together.

  Among the above, it is preferable to use at least a hydroxyl group-containing (meth) acrylic acid ester as a monomer constituting the acrylic polymer (a) from the viewpoint of compatibility with the epoxy resin (b). In this case, in the acrylic polymer (a), the structural unit derived from the hydroxyl group-containing (meth) acrylic acid ester is preferably included in the range of 1 to 20% by mass, and included in the range of 3 to 15% by mass. It is more preferable. Specifically, the acrylic polymer (a) is preferably a copolymer of a (meth) acrylic acid alkyl ester and a hydroxyl group-containing (meth) acrylic ester.

  In addition, the acrylic polymer (a) may be copolymerized with monomers such as vinyl acetate, acrylonitrile, and styrene within a range that does not impair the object of the present invention.

  Various conventionally known epoxy resins can be used as the epoxy resin (b). Epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, dicyclopentadiene (DCPD) type epoxy resin, biphenyl type epoxy resin, Epoxys containing two or more functional groups in the structural unit such as triphenolmethane type epoxy resins, heterocyclic type epoxy resins, stilbene type epoxy resins, condensed ring aromatic hydrocarbon modified epoxy resins, and halides thereof. Resin. These epoxy resins may be used individually by 1 type, and may use 2 or more types together.

  Although the epoxy equivalent of an epoxy resin is not specifically limited, It is preferable that it is 150-1000 (g / eq). The epoxy equivalent is a value measured according to JIS K7236: 2008.

  1-1500 mass parts is preferable with respect to 100 mass parts of acrylic polymers (a), and, as for content of an epoxy resin (b), 3-1000 mass parts is more preferable. If the content of the epoxy resin (b) is less than the above range, sufficient adhesive strength may not be obtained. If the content of the epoxy resin (b) exceeds the above range, the film forming property is lowered. There is a possibility that it is difficult to form the adhesive layer 3.

  The curing agent (c) functions as a curing agent for the epoxy resin (b). Examples of the curing agent (c) include compounds having two or more functional groups capable of reacting with an epoxy group in the molecule, such as phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, acids. An anhydride group etc. are mentioned. In these, a phenolic hydroxyl group, an amino group, and an acid anhydride group are preferable, and a phenolic hydroxyl group and an amino group are more preferable.

  Specific examples of the curing agent (c) include phenolic thermosetting agents such as novolak type phenolic resin, dicyclopentadiene type phenolic resin, triphenolmethane type phenolic resin and aralkylphenolic resin; amine type heat such as DICY (dicyandiamide). A curing agent is mentioned. A hardening | curing agent (c) may be used individually by 1 type, and may use 2 or more types together.

  As for content of a hardening | curing agent (c), 0.1-500 mass parts is preferable with respect to 100 mass parts of epoxy-type resin (b), and 1-200 mass parts is more preferable. When content of a hardening | curing agent (c) is less than the said range, the adhesive bond layer 3 which has sufficient adhesive force may not be obtained. When the content of the curing agent (c) exceeds the above range, the moisture absorption rate of the adhesive layer 3 is increased, and the reliability of the semiconductor package may be lowered.

  In addition to the above, the material constituting the adhesive layer 3 (adhesive composition) may include a curing accelerator, a coupling agent, a crosslinking agent, an energy ray polymerizable compound, a photoinitiator, a plasticizer, and an antistatic agent, as desired. Various additives such as an agent, an antioxidant, a pigment, a dye, and an inorganic filler may be contained. Each of these additives may be included singly or in combination of two or more.

  The curing accelerator is used to adjust the curing rate of the adhesive composition. As a hardening accelerator, the compound which can accelerate | stimulate reaction with an epoxy group, a phenolic hydroxyl group, an amine, etc. is preferable. Specific examples of such compounds include tertiary amines, imidazoles such as 2-phenyl-4,5-di (hydroxymethyl) imidazole, organic phosphines, and tetraphenylboron salts.

  The coupling agent has a function of improving the adhesion and adhesion to the adherend of the adhesive composition. Moreover, the water resistance of the said hardened | cured material can be improved by using a coupling agent, without impairing the heat resistance of the hardened | cured material obtained by hardening | curing adhesive composition. The coupling agent is preferably a compound having a group that reacts with the functional group of the acrylic polymer (a) and the epoxy resin (b). As such a coupling agent, a silane coupling agent is preferable. There is no restriction | limiting in particular as a silane coupling agent, A well-known thing can be used.

  The crosslinking agent is for adjusting the cohesive force of the adhesive layer 3. There is no restriction | limiting in particular as a crosslinking agent of the said acrylic polymer (a), For example, an organic polyvalent isocyanate compound, an organic polyvalent imine compound, etc. are mentioned.

  The energy beam polymerizable compound is a compound that polymerizes and cures when irradiated with energy rays such as ultraviolet rays and electron beams. By curing the energy ray-polymerizable compound by energy ray irradiation, the peelability between the adhesive layer 3 and the base film 2 is improved, so that picking up is facilitated.

  As the energy beam polymerizable compound, acrylate compounds are preferable, and those having at least one polymerizable double bond in the molecule are particularly preferable. Specific examples of such acrylate compounds include dicyclopentadiene dimethoxydiacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate. 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate, itaconic acid oligomer, and the like.

  The weight average molecular weight of the acrylate compound is usually from 100 to 30,000, preferably from about 300 to 10,000.

  When the adhesive composition contains an energy ray polymerizable compound, the content of the energy ray polymerizable compound is usually 1 to 400 parts by mass, preferably 3 to 300 parts per 100 parts by mass of the acrylic polymer (a). It is 10 mass parts, More preferably, it is 10-200 mass parts.

  When the adhesive layer 3 contains the energy beam polymerizable compound, the photoinitiator can reduce the polymerization curing time and the energy beam irradiation amount when polymerized and cured by irradiation with energy rays. A well-known thing can be used as a photoinitiator.

  The thickness of the adhesive layer 3 is usually about 3 to 100 μm, preferably about 5 to 80 μm.

  The semiconductor processed sheet 1 as described above can be manufactured by a conventional method. For example, a coating agent containing a material constituting the adhesive layer 3 and optionally further containing a solvent is prepared, and a roll coater, knife coater, roll knife coater, air knife coater, die coater, bar coater, gravure coater, curtain coater. It can be manufactured by applying to one side of the base film 2 with a coating machine such as a coating machine and drying to form the adhesive layer 3. Or after apply | coating the said coating agent to the peeling surface of a desired peeling sheet and making it dry and forming the adhesive bond layer 3, it can also manufacture by crimping | bonding the base film 2 to the adhesive bond layer 3. .

  The semiconductor processed sheet 1 described above has good peelability between the base film 2 and the adhesive layer 3, that is, good pick-up performance, and suppresses the deterioration of the pick-up performance over time.

  The semiconductor processed sheet 1 according to the present embodiment can be preferably used as a dicing die bonding sheet used in a dicing process and a die bonding process.

[Second Embodiment]
FIG. 2 is a cross-sectional view of a semiconductor processed sheet 10 according to the second embodiment of the present invention.

  As shown in FIG. 2, the semiconductor processed sheet 10 according to this embodiment includes a base film 20 composed of two resin layers, and an adhesive layer laminated on one side (upper surface in FIG. 2) of the base film 20. 3 is provided.

  The base film 20 in the present embodiment includes a resin layer (A) located on the side in contact with the adhesive layer 3 and a resin layer (B) located on the side not in contact with the adhesive layer 3. The resin layer (A) is made of the same material as the resin layer (A) in the semiconductor processed sheet 1 according to the first embodiment. However, the thickness of the resin layer (A) in the present embodiment is preferably 10 to 120 μm, more preferably 20 to 100 μm, and particularly preferably 30 to 80 μm.

  The resin layer (B) in the present embodiment is for imparting expanding performance to the base film 20. That is, the base film 20 composed of the resin layer (A) and the resin layer (B) has good pickup performance and is excellent in expandability.

  The resin layer (B) is not particularly limited as long as it is made of a resin having excellent extensibility. Examples of such a resin include a copolymer obtained by polymerizing an olefin monomer and one or more selected from acrylic monomers.

  The resin layer (B) is particularly preferably composed of a resin composition mainly composed of an ethylene- (meth) acrylic acid copolymer excellent in extensibility. In particular, the ethylene component in the ethylene- (meth) acrylic acid copolymer gives good extensibility and expandability to the resin layer (B). The “ethylene- (meth) acrylic acid copolymer” may be an ethylene-acrylic acid copolymer, an ethylene-methacrylic acid copolymer, or an ethylene-acrylic acid-methacrylic acid. A copolymer may also be used.

  The content of (meth) acrylic acid as a constituent component in the ethylene- (meth) acrylic acid copolymer is preferably 3 to 20% by mass, more preferably 4 to 15% by mass, and 5 to 12%. It is particularly preferable that the content is% by mass. When the content of (meth) acrylic acid in the ethylene- (meth) acrylic acid copolymer is less than 3% by mass, the crystallinity of the resin layer (B) becomes high, and the base film 20 is obtained during expansion after dicing. May be necked and it may be difficult to uniformly expand the chip interval. On the other hand, if the content of (meth) acrylic acid exceeds 20% by mass, the resin layer (B) itself may be sticky, and the semiconductor processed sheet 10 can be transported when dicing using the apparatus. There is a risk of disappearing.

  In the ethylene- (meth) acrylic acid copolymer, the portion other than the structural unit derived from acrylic acid and / or methacrylic acid is basically a structural unit derived from ethylene, but the semiconductor processing according to this embodiment. As long as the purpose of the sheet 10 is not impaired, an olefin monomer other than ethylene, an α-olefin such as propylene, an acrylic monomer other than (meth) acrylic acid, methyl (meth) acrylate, ethyl (meth) A structural unit derived from an acrylate ester, an alkyl vinyl ester or the like may be contained. The structural unit derived from such other monomers may be contained in the ethylene- (meth) acrylic acid copolymer in a proportion of less than 10% by mass.

  There is no restriction | limiting in particular about the copolymerization form of an ethylene- (meth) acrylic acid copolymer, Any of a random, a block, and a graft copolymer may be sufficient. The molecular weight of the ethylene- (meth) acrylic acid copolymer is preferably 10,000 to 1,000,000 in terms of weight average molecular weight (Mw), and particularly preferably 50,000 to 500,000. preferable.

  The main component of the resin composition constituting the resin layer (B) may be one type of ethylene- (meth) acrylic acid copolymer or two or more types of ethylene- (meth) acrylic acid copolymers. May be blended.

  In addition to the ethylene- (meth) acrylic acid copolymer, the resin composition constituting the resin layer (B) is ethylene-butyl acrylate, as long as the purpose of the semiconductor processed sheet 10 according to this embodiment is not impaired. Ethylene-vinyl acetate, ethylene-propylene copolymer, ethylene-butene copolymer and the like may be contained. The content of these resins is preferably 30% by mass or less, and particularly preferably 10% by mass or less, in the resin composition.

  In addition, the resin layer (B) is not limited to the above-mentioned materials. For example, polyolefin such as polyethylene, polypropylene, and polybutene; ethylene such as ethylene-vinyl acetate copolymer and ethylene- (meth) acrylate Copolymer; Polyester such as polyethylene terephthalate and polyethylene naphthalate; Polyurethane; Polyvinyl chloride; Polyamide, etc. When the resin layer (B) is made of these materials, the handling property of the base film 2 or the semiconductor processed sheet 10 can be improved.

  The thickness of the resin layer (B) is preferably 40 to 120 μm, and particularly preferably 50 to 100 μm. Moreover, it is more preferable that the thickness of the resin layer (B) is thicker than the thickness of the resin layer (A). When the thickness of the resin layer (B) is in the above range, good expanding performance can be imparted to the base film 20.

  The base film 20 may be manufactured by simultaneously forming the resin layer (A) and the resin layer (B) by coextrusion or the like, or may be manufactured by forming each resin layer (A), (B). After the film formation, the resin layer (A) and the resin layer (B) may be laminated by an adhesive or the like.

  The breaking elongation of the base film 20 in the present embodiment is preferably 100% or more, and particularly preferably 200% or more. The base film 20 having a breaking elongation of 100% or more is not easily broken during the expanding step, and the chips formed by cutting the workpiece are easily separated.

  Moreover, it is preferable that the tensile elasticity modulus of the base film 20 in this embodiment is 80-160 MPa. When the tensile elastic modulus is less than 80 MPa, when the wafer is attached to the semiconductor processed sheet 10 and fixed to the ring frame, the base film 20 is soft and may be loosened, which may cause a conveyance error. . On the other hand, if the tensile modulus exceeds 160 MPa, the load applied during the expanding process must be increased, and thus there may be a problem that the semiconductor processed sheet 10 itself is peeled off from the ring frame.

  In the semiconductor processed sheet 10 described above, by providing the resin layer (A), it has good peelability between the base film 20 and the adhesive layer 3, that is, good pickup performance, and the pickup performance. Is suppressed over time. Moreover, the semiconductor processed sheet 10 which concerns on this embodiment has favorable expandability because the base film 20 consists of a resin layer (A) and a resin layer (B) as mentioned above.

  The semiconductor processed sheet 10 according to the present embodiment can be preferably used as a dicing die bonding sheet used in a dicing process, an expanding process, and a die bonding process.

  The embodiment described above is described for facilitating understanding of the present invention, and is not described for limiting the present invention. Therefore, each element disclosed in the above embodiment is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

  For example, the base films 2 and 20 may be composed of three or more resin layers. In this case, the resin layer in contact with the adhesive layer 3 is made of the same material as the resin layer (A).

  EXAMPLES Hereinafter, although an Example etc. demonstrate this invention further more concretely, the scope of the present invention is not limited to these Examples etc.

[Example 1]
As the olefin resin D, ultra-low density polyethylene (manufactured by Sumitomo Chemical Co., Ltd., Excellen EUL731, density: 0.895 g / cm ³ , heat flow rate at melting peak: 1.4 W / g, heat of fusion: 69.5 J / g) 10 Low-density polyethylene (Sumitomo Chemical Co., Ltd., Sumikasen L705, density 0.918 g / cm ³ , heat flow at melting peak: 5.5 W / g, heat of fusion ΔH: 126.0 J / g) 90 parts by mass were melt-kneaded with a twin-screw kneader (manufactured by Toyo Seiki Seisakusho, Labo Plast Mill) to obtain an extrusion raw material for the resin layer (A).

  Further, as a raw material for extrusion for the resin layer (B), a resin composition mainly composed of an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel N0903HC, methacrylic acid content: 9.0% by mass) ) Was prepared.

  Next, the extrusion raw material for the resin layer (A) and the extrusion raw material for the resin layer (B) are extruded using a small T-die extruder (manufactured by Toyo Seiki Seisakusho Co., Ltd., Lab Plast Mill). A base film having a two-layer structure composed of a resin layer (A) having a thickness of 40 μm and a resin layer (B) having a thickness of 60 μm was obtained.

On the other hand, the following component was mix | blended and the coating liquid for adhesive bond layer formation was adjusted. In addition, the numerical value (mass%) of each component shows the mass% of solid content conversion, and solid content means all the components other than a solvent in this specification.
[Acrylic polymer (a)]
・ Acrylic copolymer mainly composed of n-butyl acrylate (manufactured by Nippon Synthetic Chemical Industry Co., Ltd., product name “Coponil N2359-6”, Mw: about 800,000, solid content concentration: 34% by mass): 14% by mass
[Epoxy resin (b)]
Bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, product name “JER828”, epoxy equivalent 189 g / eq): 18% by mass
DCPD type epoxy resin (Dainippon Ink Chemical Co., Ltd., product name “EPICLON HP-7200HH”, epoxy equivalent 265-300 g / eq, softening point 75-90 ° C.): 55% by mass
[Curing agent (c)]
Dicyandiamide (Asahi Denka Co., Ltd., product name “Adeka Hardener 3636AS”: 1.6% by mass
[Curing accelerator]
2-phenyl-4,5-di (hydroxymethyl) imidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name “CUREZOL 2PHZ”): 1.5% by mass
[Silane coupling agent]
Silicate compound added with γ-glycidoxypropyltrimethoxysilane (Mitsubishi Chemical Co., Ltd., product name “MKC silicate MSEP2”): 0.5% by mass
[Energy ray polymerizable compound]
Dicyclopentadiene dimethoxydiacrylate (manufactured by Nippon Kayaku Co., Ltd., product name “Kalayad R684”): 9.1% by mass
[Photopolymerization initiator]
Α-Hydroxycyclohexyl phenyl ketone (Ciba Specialty Chemicals, product name “Irgacure 184”): 0.3% by mass

  The obtained coating solution for forming the adhesive layer is applied to the surface of the resin layer (A) so that the film thickness after drying becomes 20 μm, and dried at 100 ° C. for 1 minute to form an adhesive layer. Then, a semiconductor processed sheet was produced.

[Example 2]
In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 30 parts by mass and the compounding quantity of the olefin resin E to 70 parts by mass. Thus, a semiconductor processed sheet was produced.

Example 3
In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 50 parts by mass and the compounding quantity of the olefin resin E to 50 parts by mass. Thus, a semiconductor processed sheet was produced.

Example 4
In Example 3, the olefin resin D in the raw material for extrusion was changed to ultra low density polyethylene (manufactured by Sumitomo Chemical Co., Ltd., Exelen VL-200, density 0.900 g / cm ³ , heat flow at melting peak: 2.0 W / g). , A processed semiconductor sheet was produced in the same manner as in Example 3 except that the heat of fusion was changed to ΔH79.1 J / g).

Example 5
In Example 2, the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel AN4225C, methacrylic acid content: 5.0% by mass). A semiconductor processed sheet was produced in the same manner as in Example 2.

Example 6
In Example 2, except that the raw material for extrusion of the resin layer (B) is changed to an ethylene-methacrylic acid copolymer (Mitsui DuPont Polychemical Co., Ltd., Nucrel N1207C, methacrylic acid content: 12.0% by mass) A semiconductor processed sheet was produced in the same manner as in Example 2.

Example 7
In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 60 parts by mass and the compounding quantity of the olefin resin E to 40 parts by mass. Thus, a semiconductor processed sheet was produced.

Example 8
In Example 2, the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel AN4214C, methacrylic acid content: 4.0% by mass). A semiconductor processed sheet was produced in the same manner as in Example 2.

Example 9
In Example 2, the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (manufactured by Mitsui DuPont Polychemical Co., Ltd., Nucrel N1525, methacrylic acid content: 15.0% by mass). A semiconductor processed sheet was produced in the same manner as in Example 2.

Example 10
In Example 2, the resin layer (B) is not extruded, and a base film having a thickness of 100 μm is formed only by the resin layer (A), and then an adhesive is formed on the base film in the same manner as in Example 1. Layers were formed to produce semiconductor processed sheets.

[Comparative Example 1]
In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of a resin layer (A) to 0 mass part and the compounding quantity of the olefin resin E to 100 mass parts. Thus, a semiconductor processed sheet was produced.

[Comparative Example 2]
In Example 1, it is the same as Example 1 except changing the compounding quantity of the olefin resin D in the raw material for extrusion of the resin layer (A) to 5 parts by mass and the compounding quantity of the olefin resin E to 95 parts by mass. Thus, a semiconductor processed sheet was produced.

[Comparative Example 3]
In Example 2, as the olefin resin D, an ultra-low density polyethylene (manufactured by Tosoh Corporation, LumiTac 43-1, density 0.905 g / cm ³ , heat flow rate at melting peak: 2.4 W / g, heat of fusion ΔH88.9J) / G), a semiconductor processed sheet was produced in the same manner as in Example 2.

[Comparative Example 4]
In Example 2, as the olefin resin D, an ultra-low density polyethylene (Prime Polymer, Evolue SP90100, density 0.890 g / cm ³ , heat flow at melting peak: 2.8 W / g, heat of fusion ΔH87.8 J / A semiconductor processed sheet was produced in the same manner as in Example 2 except that g) was used.

[Comparative Example 5]
In Comparative Example 1, except that the raw material for extrusion of the resin layer (B) was changed to an ethylene-methacrylic acid copolymer (Mitsui DuPont Polychemical Co., Ltd., Nucrel N4214C, methacrylic acid content: 4.0% by mass), A semiconductor processed sheet was produced in the same manner as in Comparative Example 1.

[Test Example 1] (Evaluation of pickup performance)
The semiconductor processed sheets produced in the examples and comparative examples were cut into 25 mm × 250 mm to prepare test pieces. This test piece was attached to the ground surface of a # 2000 silicon wafer (200 mm diameter, 350 μm thick), and a 2 kg rubber roll was reciprocated once to pressure-bond both. In this state, after being left for 20 minutes or more under conditions of 23 ° C. and 50% RH, 180 ° peeling was performed at a speed of 300 mm / min using a universal type tensile tester (Orientec Co., Ltd., Tensilon), followed by adhesion. The peel force between the agent layer and the substrate film was measured, and the value was defined as (initial value: f1 (mN / 25 mm)).

On the other hand, the semiconductor processed sheet was heated for 24 hours under the condition of 40 ° C. (40 ° C. constant temperature bath), then returned to room temperature, and the peeling force between the adhesive layer and the base film was measured in the same manner as described above. And its value (value after promotion: f2 (mN / 25 mm)). Both these values were introduced into the following equation, and the rate of change in peel force: R (%) was calculated. The pick-up performance was ◯ when R was 50% or less, Δ when R was more than 50% and 100% or less, and x when R was more than 100%. The results are shown in Table 1.
R = (f2−f1) × 100 / f1

[Test Example 2] (Softening temperature measurement test)
The softening temperature was measured for the extrusion raw material for the resin layer (A) melt-kneaded by the twin-screw kneader shown in Example 1 (manufactured by Toyo Seiki Seisakusho, Labo Plast Mill). Specifically, using a Koka flow tester (manufactured by Shimadzu Corporation, model number: CFT-100D), using a die having a hole shape of φ2.0 mm and a length of 5.0 mm, a sample amount of 4 g, Measurement was performed under the conditions of a load of 9.81 N and a temperature increase rate of 10 ° C./min, and the temperature at which the stroke began to change was defined as the softening temperature. The results are shown in Table 1.

[Test Example 3] (Expandability test)
After a 6-inch wafer was attached to the adhesive layer of the semiconductor processed sheet produced in the examples and comparative examples, the semiconductor processed sheet was mounted on a flat frame, and the wafer was fully filled into a 5 mm square chip with a 20 μm thick diamond blade. Cut. Next, using an expanding jig (manufactured by NEC Machinery, die bonder CSP-100VX), the semiconductor processed sheet was pulled down 10 mm at a speed of 300 mm / min. The expanded state of the entire wafer at this time was confirmed visually. As a result, it is possible to expand without problems, ○ if the chips are uniformly arranged overall, can be expanded, △ if there are uneven parts of the chip, △, if the semiconductor processing sheet breaks during expansion Was judged as x. The results are shown in Table 1.

[Test Example 4] (Handling evaluation)
The base film produced in Examples and Comparative Examples was wound up 100 m on a 3 inch diameter, 330 mm wide plastic tube to prepare an evaluation sample. The sample was stored in an atmosphere at 40 ° C. for 1 week, and the state when the sample was rewound again was evaluated according to the following criteria. The results are shown in Table 1.
○: Can be unwound without resistance.
Δ: Unwinding is possible, but partial blocking occurs, leaving marks on the sheet surface.
X: Blocking occurs partially or entirely, and unwinding is not possible.

  As is clear from Table 1, the semiconductor processed sheets of Examples 1 to 10 in which the resin layer (A) satisfies the requirements of the present invention were maintained even after good pickup performance was promoted. Moreover, it confirmed that the semiconductor processed sheet of Examples 1-9 which consists of the resin layer (A) and the resin layer (B) which satisfy | fills the requirements of this invention is excellent also in expandability in addition to pick-up property. It was done. Furthermore, the content of the olefin resin D in the resin layer (A) is 10 to 50% by mass, and the methacrylic acid content in the ethylene-methacrylic acid copolymer in the resin layer (B) is 5.0 to 12.0. It was confirmed that the semiconductor processed sheets of Examples 1 to 6 which are mass% are particularly excellent in all of the handling property and the expandability in addition to the pickup property.

  On the other hand, in the semiconductor processed sheet of the comparative example in which the resin layer (A) does not satisfy the requirements of the present invention, the pick-up force increased after promotion, and good pick-up performance could not be obtained.

  The base film for semiconductor processed sheets and the semiconductor processed sheet according to the present invention are particularly suitable for use in dicing / die bonding sheets.

DESCRIPTION OF SYMBOLS 1,10 ... Semiconductor processing sheet 2,20 ... Base film 3 ... Adhesive layer

Claims (14)

A base film for a semiconductor processed sheet comprising a single layer or multiple layers of resin layers,
A resin composition in which at least one of the resin layers contains 10 to 70% by mass of an olefin resin having a resin density of 0.870 to 0.900 g / cm ³ and a heat flow rate of 2.5 W / g or less at a melting peak. A base film for a semiconductor processed sheet, which is a resin layer (A) comprising: The resin layer (A);
It consists of two layers with the resin layer (B) which consists of materials other than the said resin composition which comprises the said resin layer (A), The base film for semiconductor processed sheets of Claim 1 characterized by the above-mentioned.   The base film for a semiconductor processed sheet according to claim 1 or 2, wherein the heat of fusion ΔH of the olefin resin is 85.0 J / g or less.   The said resin composition which comprises the said resin layer (A) consists of the said olefin resin and olefin resin other than the said olefin resin, It is any one of Claims 1-3 characterized by the above-mentioned. Base film for semiconductor processed sheet.   The softening temperature of the said resin layer (A) is 90-120 degreeC, The base film for semiconductor processed sheets as described in any one of Claims 1-4 characterized by the above-mentioned.   The said resin layer (B) consists of a resin composition which has ethylene- (meth) acrylic acid copolymer as a main component, The base for semiconductor processed sheets as described in any one of Claims 2-5 characterized by the above-mentioned. Material film.   7. The semiconductor according to claim 6, wherein the content of (meth) acrylic acid as a constituent component in the ethylene- (meth) acrylic acid copolymer of the resin layer (B) is 5 to 20% by mass. Base film for processed sheet.   It is used for the said base film of the sheet | seat for semiconductor processing provided with a base film and the adhesive bond layer laminated | stacked on the single side | surface of the said base film. The base film for semiconductor processing sheets as described.   The base film for a semiconductor processed sheet according to claim 8, wherein the adhesive layer is composed of an adhesive composition containing an acrylic polymer, an epoxy resin, and a curing agent. A substrate film for a semiconductor processed sheet according to any one of claims 1 to 9,
The semiconductor processing sheet | seat provided with the adhesive bond layer laminated | stacked on the single side | surface of the said base film for semiconductor processing sheets.   The said adhesive bond layer is comprised from the adhesive composition containing an acrylic polymer, an epoxy resin, and a hardening | curing agent, The semiconductor processed sheet of Claim 10 characterized by the above-mentioned.   The semiconductor processed sheet according to claim 10 or 11, wherein the resin layer (A) in the base film for a semiconductor processed sheet is in contact with the adhesive layer. After pasting the semiconductor processed sheet on the semiconductor wafer via the adhesive layer of the semiconductor processed sheet comprising a base film and an adhesive layer laminated on one side of the base film, the semiconductor wafer Cutting into semiconductor chips;
Peeling the both at the interface between the base film for a semiconductor processed sheet and the adhesive layer, and forming the chip with the adhesive layer;
A semiconductor processing sheet used in a method for manufacturing a semiconductor device, comprising a step of bonding the chip with the adhesive layer to a circuit board through the adhesive layer,
The said base film is a base film for semiconductor processed sheets as described in any one of Claims 1-9, The semiconductor processed sheet characterized by the above-mentioned. After pasting the semiconductor processing sheet according to any one of claims 10 to 12 to the semiconductor wafer via the adhesive layer, cutting the semiconductor wafer into semiconductor chips;
Peeling the both at the interface between the base film for a semiconductor processed sheet and the adhesive layer, and forming the chip with the adhesive layer;
And a step of bonding the chip with the adhesive layer to a circuit board with the adhesive layer interposed therebetween.

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