KR20140006039A - 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 - Google Patents

광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 Download PDF

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KR20140006039A
KR20140006039A KR1020137024624A KR20137024624A KR20140006039A KR 20140006039 A KR20140006039 A KR 20140006039A KR 1020137024624 A KR1020137024624 A KR 1020137024624A KR 20137024624 A KR20137024624 A KR 20137024624A KR 20140006039 A KR20140006039 A KR 20140006039A
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South Korea
Prior art keywords
etch
measurement
stage
etch stage
optical metrology
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KR1020137024624A
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English (en)
Korean (ko)
Inventor
마누엘 마드리아가
신강 티안
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도쿄엘렉트론가부시키가이샤
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Publication of KR20140006039A publication Critical patent/KR20140006039A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Automation & Control Theory (AREA)
KR1020137024624A 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템 Ceased KR20140006039A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/029,349 2011-02-17
US13/029,349 US8193007B1 (en) 2011-02-17 2011-02-17 Etch process control using optical metrology and sensor devices
PCT/US2012/025746 WO2012112959A1 (en) 2011-02-17 2012-02-17 Etch process control using optical metrology and sensor devices

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177025199A Division KR20170107094A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Publications (1)

Publication Number Publication Date
KR20140006039A true KR20140006039A (ko) 2014-01-15

Family

ID=46148020

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137024624A Ceased KR20140006039A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템
KR1020177025199A Ceased KR20170107094A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177025199A Ceased KR20170107094A (ko) 2011-02-17 2012-02-17 광학적 메트롤로지 및 센서 디바이스를 이용한 에칭 프로세스 제어 방법 및 시스템

Country Status (5)

Country Link
US (1) US8193007B1 (https=)
JP (1) JP6019043B2 (https=)
KR (2) KR20140006039A (https=)
TW (1) TWI464818B (https=)
WO (1) WO2012112959A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190059329A (ko) * 2016-10-21 2019-05-30 케이엘에이-텐코 코포레이션 총 측정 불확도의 정량화 및 감소

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445296B2 (en) * 2011-07-22 2013-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and methods for end point determination in reactive ion etching
US9287097B2 (en) * 2011-11-30 2016-03-15 Sony Corporation Predicting ultraviolet ray damage with visible wavelength spectroscopy during a semiconductor manufacturing process
US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
NL2013417A (en) 2013-10-02 2015-04-07 Asml Netherlands Bv Methods & apparatus for obtaining diagnostic information relating to an industrial process.
US10217681B1 (en) * 2014-08-06 2019-02-26 American Air Liquide, Inc. Gases for low damage selective silicon nitride etching
US20160240366A1 (en) * 2015-02-17 2016-08-18 Infineon Technologies Ag Processing of Semiconductor Devices
US10386829B2 (en) * 2015-09-18 2019-08-20 Kla-Tencor Corporation Systems and methods for controlling an etch process
US10192763B2 (en) * 2015-10-05 2019-01-29 Applied Materials, Inc. Methodology for chamber performance matching for semiconductor equipment
WO2018163396A1 (ja) * 2017-03-10 2018-09-13 三菱電機株式会社 半導体製造装置および半導体製造方法
US10784174B2 (en) * 2017-10-13 2020-09-22 Lam Research Corporation Method and apparatus for determining etch process parameters
US11164768B2 (en) * 2018-04-27 2021-11-02 Kla Corporation Process-induced displacement characterization during semiconductor production
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP7413081B2 (ja) * 2020-02-28 2024-01-15 東京エレクトロン株式会社 基板処理システム
GB202010471D0 (en) * 2020-07-08 2020-08-19 Univ Exeter Control of processing equipment
US12106984B2 (en) * 2021-11-23 2024-10-01 Applied Materials, Inc. Accelerating preventative maintenance recovery and recipe optimizing using machine-learning based algorithm
US20230163001A1 (en) * 2021-11-23 2023-05-25 Applied Materials, Inc. Method to eliminate first wafer effects on semiconductor process chambers
CN114724943A (zh) * 2022-03-18 2022-07-08 福建晶安光电有限公司 一种等离子体蚀刻方法及系统
US12400888B2 (en) * 2022-03-31 2025-08-26 Tokyo Electron Limited Data fusion of multiple sensors
KR102894716B1 (ko) * 2023-09-14 2025-12-03 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
WO2026047926A1 (ja) * 2024-08-29 2026-03-05 株式会社日立ハイテク プラズマ処理・制御装置およびプラズマ処理・制御方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288367A (en) 1993-02-01 1994-02-22 International Business Machines Corporation End-point detection
US5658423A (en) 1995-11-27 1997-08-19 International Business Machines Corporation Monitoring and controlling plasma processes via optical emission using principal component analysis
US5862060A (en) 1996-11-22 1999-01-19 Uop Llc Maintenance of process control by statistical analysis of product optical spectrum
US6943900B2 (en) 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6785638B2 (en) 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
US7216045B2 (en) 2002-06-03 2007-05-08 Timbre Technologies, Inc. Selection of wavelengths for integrated circuit optical metrology
US6979578B2 (en) 2002-08-13 2005-12-27 Lam Research Corporation Process endpoint detection method using broadband reflectometry
US7352478B2 (en) 2002-12-20 2008-04-01 International Business Machines Corporation Assessment and optimization for metrology instrument
US20040267397A1 (en) 2003-06-27 2004-12-30 Srinivas Doddi Optical metrology of structures formed on semiconductor wafer using machine learning systems
US7158221B2 (en) * 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
US7065423B2 (en) * 2004-07-08 2006-06-20 Timbre Technologies, Inc. Optical metrology model optimization for process control
KR20060005830A (ko) 2004-07-14 2006-01-18 삼성전자주식회사 통합 슬롯이 탑재된 인쇄 회로 기판
US20060112796A1 (en) 2004-11-30 2006-06-01 Chang-Ying Chen Screwdriver with teethed head
US7467064B2 (en) 2006-02-07 2008-12-16 Timbre Technologies, Inc. Transforming metrology data from a semiconductor treatment system using multivariate analysis
US7596422B2 (en) * 2007-01-12 2009-09-29 Tokyo Electron Limited Determining one or more profile parameters of a structure using optical metrology and a correlation between profile models and key profile shape variables
CN101675495B (zh) * 2007-02-02 2011-12-14 雷克萨斯研究有限公司 用于测量等离子体刻蚀工艺的工艺参数的方法和装置
US7591600B2 (en) * 2007-02-23 2009-09-22 Tokyo Electron Limited Method and system for monitoring photolithography processing based on a batch change in light sensitive material
US7742177B2 (en) 2008-01-22 2010-06-22 Tokyo Electron Limited Noise-reduction metrology models
US7589845B1 (en) * 2008-03-27 2009-09-15 Tokyo Electron Limited Process control using an optical metrology system optimized with signal criteria
US7761250B2 (en) 2008-06-18 2010-07-20 Tokyo Electron Limited Optical metrology system optimized with design goals
US8173451B1 (en) * 2011-02-16 2012-05-08 Tokyo Electron Limited Etch stage measurement system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190059329A (ko) * 2016-10-21 2019-05-30 케이엘에이-텐코 코포레이션 총 측정 불확도의 정량화 및 감소

Also Published As

Publication number Publication date
TW201241949A (en) 2012-10-16
WO2012112959A1 (en) 2012-08-23
KR20170107094A (ko) 2017-09-22
TWI464818B (zh) 2014-12-11
JP2014514727A (ja) 2014-06-19
JP6019043B2 (ja) 2016-11-02
US8193007B1 (en) 2012-06-05

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