KR20130121947A - 고체 촬상 장치 - Google Patents

고체 촬상 장치 Download PDF

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Publication number
KR20130121947A
KR20130121947A KR1020137021916A KR20137021916A KR20130121947A KR 20130121947 A KR20130121947 A KR 20130121947A KR 1020137021916 A KR1020137021916 A KR 1020137021916A KR 20137021916 A KR20137021916 A KR 20137021916A KR 20130121947 A KR20130121947 A KR 20130121947A
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KR
South Korea
Prior art keywords
region
semiconductor region
pixel
signal
semiconductor
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Application number
KR1020137021916A
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English (en)
Korean (ko)
Inventor
후지오 마스오카
노조무 하라다
Original Assignee
유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 filed Critical 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드
Publication of KR20130121947A publication Critical patent/KR20130121947A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020137021916A 2012-02-20 2012-02-20 고체 촬상 장치 KR20130121947A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2012/053995 WO2013124956A1 (ja) 2012-02-20 2012-02-20 固体撮像装置

Publications (1)

Publication Number Publication Date
KR20130121947A true KR20130121947A (ko) 2013-11-06

Family

ID=49005179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137021916A KR20130121947A (ko) 2012-02-20 2012-02-20 고체 촬상 장치

Country Status (5)

Country Link
JP (1) JP5547853B2 (zh)
KR (1) KR20130121947A (zh)
CN (1) CN103384916A (zh)
TW (1) TW201336062A (zh)
WO (1) WO2013124956A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160081531A (ko) 2014-12-31 2016-07-08 에스에프씨 주식회사 고효율과 장수명을 갖는 유기 발광 소자
KR20160095827A (ko) 2015-02-04 2016-08-12 에스에프씨 주식회사 저전압구동이 가능하며 장수명을 갖는 유기 발광 소자
KR20160102881A (ko) 2015-02-23 2016-08-31 에스에프씨 주식회사 저전압구동이 가능하며 고효율을 갖는 유기 발광 소자

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11114480B2 (en) 2013-03-15 2021-09-07 ActLight SA Photodetector
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US10964837B2 (en) 2013-03-15 2021-03-30 ActLight SA Photo detector systems and methods of operating same
US10269855B2 (en) 2013-03-15 2019-04-23 ActLight SA Photo detector systems and methods of operating same
EP3555926B1 (en) * 2017-03-17 2024-05-01 Actlight S.A. Photo detector systems and methods of operating same
US11251217B2 (en) 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011021161A (ja) * 2009-07-21 2011-02-03 National Printing Bureau 蛍光体
WO2011111662A1 (ja) * 2010-03-08 2011-09-15 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
JP5054182B2 (ja) * 2010-03-12 2012-10-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 固体撮像装置
US8487357B2 (en) * 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
JP5085688B2 (ja) * 2010-06-10 2012-11-28 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 不揮発性半導体メモリトランジスタ、不揮発性半導体メモリ、および、不揮発性半導体メモリの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160081531A (ko) 2014-12-31 2016-07-08 에스에프씨 주식회사 고효율과 장수명을 갖는 유기 발광 소자
US10947449B2 (en) 2014-12-31 2021-03-16 Sfc Co., Ltd. Organic light-emitting diode with high efficiency and long lifetime
KR20160095827A (ko) 2015-02-04 2016-08-12 에스에프씨 주식회사 저전압구동이 가능하며 장수명을 갖는 유기 발광 소자
US10468603B2 (en) 2015-02-04 2019-11-05 Sfc Co., Ltd. Organic light-emitting diode having low driving voltage and long lifespan
KR20160102881A (ko) 2015-02-23 2016-08-31 에스에프씨 주식회사 저전압구동이 가능하며 고효율을 갖는 유기 발광 소자

Also Published As

Publication number Publication date
JP5547853B2 (ja) 2014-07-16
JPWO2013124956A1 (ja) 2015-05-21
WO2013124956A1 (ja) 2013-08-29
CN103384916A (zh) 2013-11-06
TW201336062A (zh) 2013-09-01

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application