KR20130118551A - Light emitting device, method for fabricating the same, and light emitting device package - Google Patents

Abstract

PURPOSE: A light emitting device, a manufacturing method thereof, and a light emitting device package are provided to prevent a power drop due to a zener diode by removing the zener diode. CONSTITUTION: A light emitting structure layer (120) includes a first conductive semiconductor layer (117), a second conductive semiconductor layer (123), and an active layer (119). A first electrode (141) is electrically connected to the first conductive semiconductor layer. A second electrode (151) is electrically connected to the second conductive semiconductor layer. The second electrode includes a discharge part (152) corresponding to the first electrode. The discharge part of the second electrode spatially corresponds to the first electrode by a hollow part (25).

Description

LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE}

Embodiments relate to a light emitting device, a light emitting device manufacturing method, and a light emitting device package.

A light emitting diode (LED) is a light emitting element that converts current into light. Recently, light emitting diodes have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination because the luminance gradually increases.

In recent years, high output light emitting chips capable of realizing full color by generating short wavelength light such as blue or green have been developed. By applying a phosphor that absorbs a part of the light output from the light emitting chip and outputs a wavelength different from the wavelength of the light, the light emitting diodes of various colors can be combined and a light emitting diode emitting white light can be realized Do.

The embodiment provides a light emitting device having an electrode structure of a new structure.

The embodiment provides a light emitting device capable of inducing a discharge through two electrodes corresponding to each other.

The embodiment provides a light emitting device in which an electrode connected to a second conductive semiconductor layer and a first conductive semiconductor layer correspond to each other to induce discharge.

An embodiment is an electrostatic discharge (ESD) through space discharge between different conductive materials Provided is a light emitting device package capable of protecting a light emitting device.

The light emitting device according to the embodiment may include a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure layer comprising a; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive semiconductor layer, wherein the second electrode includes a discharge part corresponding to the first electrode, and spatially separates the discharge part of the second electrode and the first electrode. It includes pupils to correspond with.

The light emitting device according to the embodiment may include a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Light emitting structure layer comprising a; A first electrode electrically connected to the first conductive semiconductor layer; And a second electrode electrically connected to the second conductive semiconductor layer, wherein a portion of the upper surface of the first conductive semiconductor layer is opened, and the second electrode corresponds to a portion of the upper surface of the first conductive semiconductor layer. And a cavity for spatially matching the discharge portion of the second electrode with a portion of the upper surface of the first conductive semiconductor layer.

The embodiment can provide a light emitting device having a new discharge structure.

The embodiment may protect the light emitting device from ESD.

The embodiment can improve the electrical reliability of the light emitting device.

Since the embodiment does not include a zener diode, a light emitting device package and a light emitting module capable of preventing a power drop caused by a zener diode may be provided.

Embodiments can improve the reliability of the light emitting device and the light emitting device package having the same.

1 is a side cross-sectional view of a light emitting device according to the first embodiment.
FIG. 2 is a side view of the light emitting device of FIG. 1.
3 is another example of the light emitting device of FIG. 1.
4 is another example of the light emitting device of FIG. 1.
5 is a side sectional view of the light emitting device according to the second embodiment.
6 is a side cross-sectional view of a light emitting device according to a third embodiment.
7 is a side cross-sectional view of the light emitting device according to the fourth embodiment.
8 is a side cross-sectional view of a light emitting device according to a fifth embodiment.
9 is a side cross-sectional view of a light emitting device according to a sixth embodiment.
10 is a side cross-sectional view of a light emitting device according to a seventh embodiment.
11 is a side cross-sectional view of a light emitting device according to an eighth embodiment.
12 to 15 are views illustrating a manufacturing process of the light emitting device of FIG. 1.
16 is a perspective view showing a light emitting device package having a light emitting device according to the embodiment.
17 is a side cross-sectional view of the light emitting device package of FIG. 16.
18 is a diagram illustrating a display device according to an exemplary embodiment.
19 is a diagram illustrating another example of a display device according to an exemplary embodiment.
20 is a view showing a lighting apparatus according to an embodiment.

Hereinafter, a light emitting device and a method of manufacturing the same according to the embodiment will be described in detail with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a side cross-sectional view of a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device 101 may include a substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second conductive semiconductor layer. 123, an electrode layer, a first electrode 141, and a second electrode 151.

The substrate 111 may be selectively formed from a light transmissive, insulating or conductive material. For example, sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga At least one of ₂ O ₃ and LiGaO ₃ may be used. A plurality of protrusions 112 may be formed on an upper surface of the substrate 111, and the plurality of protrusions 112 may be formed through etching of the substrate 111 or may have a light extraction structure such as a separate roughness. It can be formed as. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The thickness of the substrate 111 may be formed in the range of 30㎛ ~ 300㎛, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), or plasma laser deposition (PLD). It can be formed by a dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited to such equipment.

A buffer layer 113 may be formed on the substrate 111, and the buffer layer 113 may be formed of at least one layer using a group II-VI or group III-V compound semiconductor. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V group compound semiconductor, and the undoped semiconductor layer may have low conductivity even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be formed between the plurality of first conductive semiconductor layers 117.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a Group III-V compound semiconductor doped with a first conductive dopant, and is, for example, In _x Al _y Ga _{1- x- y} N (0 _{≦ x ≦} 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 117 is an n-type semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a few Å or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first cladding layer may be formed of a GaN-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer and a barrier layer are alternately disposed, and the well layer may be a well layer having a continuous energy level. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer. For example, In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + It can be formed from a semiconductor material having a compositional formula of y≤1). The pair of the well layer and the barrier layer includes, for example, at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN.

The thickness of the well layer may be formed in the range of 1.5 ~ 5nm, for example may be formed in the range of 2 ~ 4nm. The thickness of the barrier layer is thicker than the thickness of the well layer and may be formed in the range of 5-30 nm, for example, may be formed in the range of 5-7 nm. The barrier layer may include an n-type dopant, but is not limited thereto. The active layer 119 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

A clad layer 121 is formed on the active layer 119, and the clad layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119, and is a group III-V compound semiconductor, eg, GaN. It may be formed of a system semiconductor. For example, the cladding layer 121 may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The clad layer 121 may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 123 is formed on the clad layer 121, and the second conductive semiconductor layer 123 includes a dopant of a second conductive type. The second conductive semiconductor layer 123 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The conductive types of the layers of the light emitting structure layer 120 may be formed to be opposite to each other. For example, the second conductive semiconductor layers 121 and 123 may be n-type semiconductor layers, and the first conductive semiconductor layer 117 may be p-type. It may be implemented as a semiconductor layer. An n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 123. The light emitting device 101 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 123 as a light emitting structure layer 120. 120 may include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. The np and pn junctions have an active layer disposed between two layers, and the npn junction or pnp junction includes at least one active layer between three layers.

An electrode layer 131 and a second electrode 151 are formed on the light emitting structure layer 120, and a first electrode 141 is formed on the first conductive semiconductor layer 117.

The electrode layer 131 may be formed of a material having permeability and electrical conductivity as a current diffusion layer. The electrode layer 131 may be formed of a transparent electrode layer having a refractive index lower than that of the compound semiconductor layer.

The electrode layer 131 is formed on an upper surface of the second conductive semiconductor layer 123, and the material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum (AZO). zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, etc. Selected, and may be formed of at least one layer. The electrode layer 131 may be formed as a reflective electrode layer, and the material may be selectively formed among, for example, Al, Ag, Pd, Rh, Pt, Ir, and two or more alloys thereof.

The second electrode 151 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 131, and may include an electrode pad. The second electrode 151 may further have a current diffusion pattern having an arm structure or a finger structure. The second electrode 151 may be made of a non-transmissive metal having a characteristic of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

The second electrode 151 may be formed to be 40% or less, for example, 20% or less of the upper surface area of the second conductive semiconductor layer 123, but is not limited thereto.

The first electrode 141 is formed in the open area A1 of the first conductive semiconductor layer 117. The first electrode 141 and the second electrode 151 may be formed of a metal such as Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Can be selected from among the optional alloys.

An insulating layer 161 may be further formed on the surface of the light emitting device 101, and the insulating layer 161 may prevent an interlayer short of the light emitting structure layer 120 and prevent moisture penetration. have.

The insulating layer 161 is formed on the open area A1 of the light emitting structure layer 120 to insulate between the first electrode 141 and the sidewall 21 of the light emitting structure layer 120. In addition, a portion 162 of the insulating layer 161 may be formed between the electrode layer 131 and the second electrode 151.

The second electrode 151 includes a discharge unit 152, which protrudes toward the open area A1 of the light emitting structure layer 120 and is mutually opposite to the first electrode 141. Corresponding. The discharge part 152 of the second electrode 151 may be disposed to overlap the first electrode 141 in the vertical direction, or may be disposed at a position adjacent to the first electrode 141. Here, the discharge part 152 of the second electrode 151 is in the direction of the side wall 13 of the light emitting element 101, that is, the opposite side wall, from the side surface 22 of the insulating layer 161 to a predetermined length D1. It may protrude in the opposite direction to 12. Here, the length (D1) may be formed in the range of 100nm-2000㎛, but is not limited thereto.

The discharge part 152 of the second electrode 151 may protrude from the sidewall 21 of the light emitting structure layer 120 to a length thicker than the thickness of the insulating layer 161, for example, a length D2. . The length D2 may be longer or shorter than an interval between the sidewall 21 of the light emitting structure layer 120 and the first electrode 141, but is not limited thereto.

The distance T1 between the discharge part 152 of the second electrode 151 and the first electrode 141 is the height of the pupil 25 and is disposed within a range of 100 nm-10 μm, for example, 100 nm-3 μm. Can be.

An area between the discharge part 152 of the second electrode 151 and the first electrode 141 of the open area A1 may include a pupil 25, and the pupil 25 may be an air region. Or with a gas having various dielectric strengths, such as SF6. This cavity 25 may be described as a substantial discharge path or discharge region. The pupil 25 has a smaller capacitance value than the material of the insulating layer 161.

As shown in FIG. 2, the discharging unit 152 of the second electrode 151 and the first electrode 141 are disposed so that even if an abnormal voltage is applied to the first electrode 141, the pupil 25 may be used. The discharge E1 is performed to the discharge unit 152 of the second electrode 151. Accordingly, the breakdown by the gas is not permanent compared to a dielectric such as a solid, thereby protecting the light emitting device from ESD and providing electrical reliability. The pupil 25 may flow an abnormal voltage supplied to the second electrode 151 in the opposite direction.

Referring to FIG. 2, the width W1 of the discharge part 152 of the second electrode 151 is larger than the width W2 of the insulating layer 161 disposed on the sidewall of the light emitting structure layer 120. It can be formed widely. The width W1 may be narrower than the width of the second electrode 151, and may be formed in a 2-5 μm range, for example, in a 2-3 μm range.

The discharge part 152 of the second electrode 151 may overlap the first electrode 141 in the vertical direction or may spatially correspond to the diagonal direction. The pupil 25 may be disposed adjacent to the insulating layer 161 between the discharge part 152 of the second electrode 151 and the first electrode 141. Even if the pupil 25 is molded with the same resin material as the molding member, the pupil 25 is maintained so that the discharge part 152 of the second electrode 151 and the upper surface of the first electrode 141 are spatially connected to each other. .

In addition, a phosphor layer (not shown) may be coated on the electrode layer 131, and the phosphor layer may emit at least one color of blue, red, green, and yellow. The phosphor layer may be formed to a thickness of 10000 μm or less from the electrode layer 131, but is not limited thereto. The phosphor layer may be further formed on the side surface of the light emitting structure layer 120 and / or the side surface of the substrate 111, but is not limited thereto. The phosphor layer may be disposed on the electrode layer 131 in the form of a flat sheet, but is not limited thereto.

Such a phosphor layer can be selectively formed, so that the space of the pupil 25 can be maintained.

3 is another example of the light emitting device of FIG. 1. Referring to FIG. 3, the light emitting device arranges the insulating layer 161 on the sidewall 21 disposed in the open area A1 of the light emitting structure layer 120. The discharge part 152 of the second electrode 151 is disposed to protrude more than the side surface 22 of the insulating layer 161 and corresponds to the top surface of the first electrode 141. A pupil 25 is disposed between the discharge portion 152 of the second electrode 151 and the first electrode 141, and the pupil 25 is a discharge portion 152 of the second electrode 151. And a portion of the upper surface of the first electrode 141.

Since the lower surface of the discharge unit 152 of the second electrode 151 is disposed on the same line as the upper surface of the second conductive semiconductor layer 123, the discharge unit 152 of the second electrode 151 and the The interval T2 between the upper surfaces of the first electrodes 141 may be close to FIG. 1, for example, may be formed in a range of 100 nm to 2.5 μm, but is not limited thereto.

4 is another example of the light emitting device of FIG. 1. Referring to FIG. 4, in the light emitting device, the insulating layer 161 is disposed on the sidewall 21 disposed in the open area A1 of the light emitting structure layer 120. The discharge part 153 of the second electrode 151 is in a horizontal direction from the side surface 22 of the insulating layer 161 or the side wall 21 of the light emitting structure layer 120 to the side wall 13 of the light emitting device. Protrudes to a predetermined length (D3, D4). The discharge part 153 of the second electrode 151 corresponds to the top surface of the first electrode 141. A pupil 25 is disposed between the discharge part 153 of the second electrode 151 and the first electrode 141, and the pupil 25 is formed of the second electrode 151 even though a molding member is filled. The discharge part 152 and a part of the upper surface of the first electrode 141 are brought into contact with each other. The length D3 or D4 may be formed in the range of 1 μm-2000 μm.

The discharge unit 153 of the second electrode 151 may correspond to the first electrode 141 in a structure having one or two or more branches.

5 is a side cross-sectional view illustrating a light emitting device according to a second embodiment. In the description of the second embodiment, the same parts as the first embodiment will be referred to the first embodiment.

Referring to FIG. 5, a second insulating layer 166 is disposed on a portion of the surface of the first electrode 141 to block interference with the discharge unit 155 of the second electrode 151. The first insulating layer 161 is formed on the sidewall 21 of the light emitting structure layer 120 and supports the lower portion of the discharge part 155 of the second electrode 151. The discharge parts 155 of the second electrode 151 correspond to the first conductive semiconductor layer 117 and are in contact with each other by the pupil 25. Accordingly, when an abnormal voltage is applied to the first electrode 141, the first conductive semiconductor layer 117 and the pupil 25 exposed to the open area A1 together with the first electrode 141. ) And the discharge part 155 of the second electrode 151.

An interval T5 between the discharge part 155 of the second electrode 151 and the first conductive semiconductor layer 117 may be formed in a range of 100 nm to 10 μm, but is not limited thereto. The interval T5 is an electrical path between the metal and the semiconductor layer, and may be formed to be shorter than that of the metal and the metal as shown in FIG. 1, but is not limited thereto. The protruding length D5 of the discharge part 155 of the second electrode 151 may be in the range of 1 μm to 2000 μm.

6 is a side cross-sectional view of a light emitting device according to a third embodiment. In the description of the third embodiment, the same parts as those of the first embodiment will be referred to the first embodiment.

Referring to FIG. 6, the light emitting device has a structure in which an electrostatic discharge (ESD) function is disposed in a center region of the light emitting structure layer 120.

At least one recess 31 is formed in a center region of the light emitting structure layer 120, and a first conductive semiconductor layer 117 is exposed at the recess 31, and the first conductive semiconductor layer is exposed. The first electrode 146 is formed on the 117. The recess 31 is a structure in which the recess 31 is etched from an upper portion of the light emitting structure layer 120 to a part of the first conductive semiconductor layer 117 in a center region spaced from the outside of the light emitting structure layer 120. In addition, the light emitting structure layer 120 is formed in a region different from the portion etched in the outer region of the light emitting structure layer 120 of FIG. 1.

The insulating layer 161 is disposed around the recess 31, and the discharge part 155 of the second electrode 151 is disposed to correspond to the first electrode 146. A pupil 25 is disposed between the discharge portion 155 of the second electrode 151 and the first electrode 146, and the pupil 25 is a discharge portion 155 of the second electrode 151. ) And the first electrode 146 are spatially connected.

As another example, the discharge part 155 of the second electrode 151 may correspond to an open top surface of the first conductive semiconductor layer 117 instead of the first electrode 146 to have an electrostatic discharge function. Can be.

7 is a side cross-sectional view of a light emitting device according to a fourth embodiment. In the description of the fourth embodiment, the same parts as those of the first embodiment will be referred to the first embodiment.

Referring to FIG. 7, the light emitting device has a structure in which an electrostatic discharge (ESD) function is disposed in a plurality of regions.

The discharge portions 156 of the first electrode 141 and the second electrode 151 are disposed on both sides of the pupil 25 in the open area A2 of the light emitting structure layer 120 adjacent to the first side wall 12 of the light emitting device. To match. The discharge portion 156 of the first electrode 141 and the second electrode 151 is disposed in the open area A2 of the light emitting structure layer 120 adjacent to the second side wall 13 of the light emitting device. Corresponds to both sides.

The first electrodes 141 may be connected to each other, but is not limited thereto.

When the abnormal voltage is applied to the first electrode 141 disposed in the different open areas A1 and A2 of the light emitting structure layer 120, the discharge part 156 of the second electrode is formed through the pupil 25. Can be delivered to discharge.

8 is a side cross-sectional view of a light emitting device according to a fifth embodiment. In the description of the fifth embodiment, the same parts as those of the first embodiment will be referred to the first embodiment.

Referring to FIG. 8, the light emitting device has a structure in which at least one electrostatic discharge (ESD) function is disposed on one sidewall 13, for example, the sidewall of the substrate 111. In addition, since the open area is not disposed in the light emitting structure layer 120, the emission area may be reduced.

A recess 32 is opened from a lower surface of the substrate 111 to a lower surface of a portion of the first conductive semiconductor layer 117. The recess 32 has a narrow upper portion and a wider lower portion. An insulating layer 163 is formed around the recess 32, and the insulating layer 163 adheres between the first electrode 142 and the substrate 111. The insulating layer 163 may not be formed.

The first electrode 142 is formed on the surface of the insulating layer 163, the contact portion 143 of the first electrode 142 is disposed on the bottom surface of the substrate 111, the discharge unit 144 is a substrate ( It is arranged on the second side wall 13 of 111.

The discharge part 144 of the first electrode 142 may extend to a side surface of the first conductive semiconductor layer 117 or to a side surface of the low conductive layer 115. The discharge part 144 of the first electrode 142 corresponds to the discharge part 157 of the second electrode 151 and is spatially contacted with each other by the pupil 25. The distance T3 between the discharge part 144 of the first electrode 142 and the discharge part 157 of the second electrode 151 is the height of the pupil 25 and is formed in a range of 1 μm-10 μm. Can be.

The discharge part 144 of the first electrode 142 and the discharge part 157 of the second electrode 151 may be disposed to correspond to two adjacent side surfaces or opposite sides of the substrate 111, respectively. It does not limit to this.

9 is a side cross-sectional view of a light emitting device according to a sixth embodiment. In describing the sixth embodiment, reference will be made to the first embodiment for the same parts as the first embodiment.

Referring to FIG. 9, a plurality of recesses 33 are disposed in the light emitting structure layer 120, and an insulating layer 164 is disposed on the recesses 33 and the electrode layer 131. A first electrode 147 is disposed on the insulating layer 164, and the first electrode 147 is insulated by the insulating layer 164 disposed in the concave portion 33 and is a first conductive semiconductor layer. Contact portion 147A in physical contact with 117 and a discharge portion 148 protruding from the insulating layer 164 to correspond to the discharge portion of the second electrode 151. The discharge part 148 of the first electrode 147 protrudes over the discharge part of the second electrode 151, thereby discharging the discharge part 148 and the second electrode 151 of the first electrode 147. The pupil 25 may be disposed between the discharge portions of the. The pupil 25 transmits an abnormal voltage supplied to the first electrode 147 to the second electrode 151 to protect the light emitting device. The discharge part 148 of the first electrode 147 may be disposed to correspond to the second electrode 151 on different areas.

The distance T4 between the discharge part 148 of the first electrode 147 and the second electrode 151 is a height of the pupil 25 and may be formed in a range of 100 nm to 10 μm. The protruding length D1 of the discharge portion 148 of the electrode 147 is a length of an overlapping region, and may be formed in a range of 100 nm to 1000 μm.

10 is a side cross-sectional view of a light emitting device according to a seventh embodiment. In describing the seventh embodiment, the same parts as in the first embodiment will be referred to the first embodiment.

Referring to FIG. 10, the light emitting device may include a recess 34 extending from an open area A1 of the light emitting structure layer 120 to a center area of the light emitting structure layer 120 or an area adjacent to the second electrode 151. It includes.

An electrode pattern of the first electrode 141 may extend in the recess 34 to be electrically connected to the first conductive semiconductor layer 117.

The second electrode 151 may include an electrode pattern 158, and the electrode pattern 158 may include a loop shape, for example, a circular or polygonal loop shape, and may include a closed loop or open loop structure. The electrode pattern 158 includes a discharge part 159, and the discharge part 159 corresponds to each other through an electrode pattern and a concave part 34 of the first electrode 141. The recess 34 includes a pupil.

12 is a side sectional view showing a light emitting device according to an eighth embodiment. In describing the eighth embodiment, the same parts as those of the first embodiment will be described with reference to the first embodiment.

Referring to FIG. 12, in the light emitting device, a first electrode 241 is disposed on the light emitting structure layer 220, and a second electrode 270 and a conductive support member 273 are disposed below the light emitting structure layer 220. Is placed.

The light emitting structure layer 220 includes a first conductive semiconductor layer 217, an active layer 219, a cladding layer 221, and a second conductive semiconductor layer 223.

An upper surface 217A of the first conductive semiconductor layer 217 may have a light extraction structure such as an uneven pattern, but is not limited thereto.

An insulating layer 261 may be disposed on the surface of the light emitting structure layer 220, and a portion of the insulating layer 261 may be further formed on the top surface 217A of the first conductive semiconductor layer 217. have.

The first electrode 341 includes a discharge part 243, and the discharge part 243 protrudes outward from the side surface of the light emitting structure layer 220 and is exposed outward from the second electrode 270. Corresponds to the discharge section.

The second electrode 270 includes an ohmic contact layer 265, a reflective layer 267, and a bonding layer 269. The ohmic contact layer 265 may be a low conductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or a metal of Ni or Ag. A reflective layer 267 is formed below the ohmic contact layer 265, and the reflective layer 267 is formed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and a combination thereof. It may be formed into a structure including at least one layer of a material selected from the group consisting of. The reflective layer 267 may be contacted under the second conductive semiconductor layer 223, may be in ohmic contact with a metal, or ohmic contact with a low conductive material such as ITO, but is not limited thereto.

A bonding layer 269 is formed below the reflective layer 267, and the bonding layer 269 may be used as a barrier metal or a bonding metal, and the material may be, for example, Ti, Au, Sn, Ni, Cr, And at least one of Ga, In, Bi, Cu, Ag, and Ta and an optional alloy.

A conductive support member 273 is formed below the bonding layer 269, and the conductive support member 273 includes, for example, a metal or carrier wafer, and the material may be copper (Cu-copper) or gold (Au-). It may be formed of a conductive material such as gold, nickel (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, etc.). As another example, the conductive support member 273 may be implemented as a conductive sheet.

A channel layer 263 is disposed around the second electrode 270 and the light emitting structure layer 220, and the channel layer 263 is formed along the bottom edge of the second conductive semiconductor layer 123. It may be formed in a ring shape, a loop shape or a frame shape. The channel layer 263 may include at least one of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . It may comprise or be formed of a metal. An inner portion of the channel layer 263 is disposed under the second conductive semiconductor layer 223, and an outer portion of the channel layer 263 is disposed outside the side surface of the light emitting structure layer 220.

Here, the method of removing the substrate, that is, the growth substrate as shown in FIG. 1 may be removed by a physical method (eg, laser lift off) or / and a chemical method (eg, wet etching), and the first conductive semiconductor layer 217 may be removed. Expose Isolation etching is performed through the direction in which the substrate is removed.

Accordingly, a light emitting device having a vertical electrode structure having a first electrode 241 on the light emitting structure layer 220 and a conductive support member 273 below may be manufactured.

An interval between the reflective layer 265 of the second electrode 270 and the discharge part 243 of the first electrode 241 may be spaced in a range of 1 μm-20 μm, and the second electrode 270 may be spaced apart from each other. The reflective layer 265 and the discharge part 243 of the first electrode 241 may be in contact with each other by the pupil 25.

12 to 15 are views illustrating a manufacturing process of the light emitting device of FIG. 1.

Referring to FIG. 12, the substrate 111 may be loaded into growth equipment, and a compound semiconductor of Group II-VI or Group III-V elements may be formed in a layer or pattern form thereon. The substrate 111 is used as a growth substrate.

Here, the substrate 111 may be made of a light transmissive substrate, an insulating substrate or a conductive substrate, for example, sapphire substrate (Al ₂ 0 ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ 0 ₃ , and GaAs and the like. A light extraction structure such as an uneven pattern may be formed on the upper surface of the substrate 111. The uneven pattern may change the critical angle of the light to improve the light extraction efficiency.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, metal organic chemical (MOCVD) vapor deposition) and the like, and the present invention is not limited thereto.

A buffer layer 113 is formed on the substrate 111, and the buffer layer 113 may be formed using a compound semiconductor of a group III-V group element. The buffer layer 113 reduces the difference in the lattice constant with the substrate 111. A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 may be formed of an undoped semiconductor layer, and the undoped semiconductor layer is intentionally doped. It may be formed of a semiconductor.

The light emitting structure layer 120 may be formed on the low conductive layer 115. The light emitting structure layer 120 may be formed in the order of the first conductive semiconductor layer 117, the active layer 119, the cladding layer 121, and the second conductive semiconductor layer 123.

The first conductive semiconductor layer 117 is a compound semiconductor of a group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like can be selected. When the first conductive type is an N type semiconductor, the first conductive type dopant includes an N type dopant such as Si, Ge, Sn, Se, Te, or the like.

An active layer 119 is formed on the first conductive semiconductor layer 117, and the active layer 119 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum line structure, and a quantum dot structure. . The active layer 119 is a group III -V compound of an element using a semiconductor material _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1 Cycle of the well layer and barrier layer having a composition formula), e.g. It is not limited thereto.

The cladding layer 121 may be formed on the active layer 119, and the cladding layer 121 may be formed of an AlGaN-based semiconductor. The barrier layer of the active layer 119 may be formed higher than the band gap of the well layer, and the clad layer may be formed higher than the band gap of the barrier layer.

The second conductive semiconductor layer 123 is formed on the clad layer 121, and the second conductive semiconductor layer 123 is a compound semiconductor of a group III-V group element doped with a second conductive dopant. , GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductive type is a P type semiconductor, the second conductive type dopant includes a P type dopant such as Mg and Zn. The second conductive semiconductor layer 119 may be formed as a single layer or a multilayer, but is not limited thereto. The second conductive semiconductor layer 123 may further include a superlattice structure having different materials, but is not limited thereto.

The first conductive semiconductor layer 117, the active layer 119, the cladding layer 121, and the second conductive semiconductor layer 123 may be defined as the light emitting structure layer 120. In addition, a third conductive semiconductor layer, eg, an N-type semiconductor layer, having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 123. Accordingly, the light emitting structure layer 120 may be formed of at least one of an n-p junction, a p-n junction, an n-p-n junction, and a p-n-p junction structure.

Referring to FIG. 13Dmf, an electrode layer 131 is formed on the light emitting structure layer 120, and the electrode layer 131 may be formed by sputtering or deposition. An open area A1 through which a portion of the first conductive semiconductor layer 117 is exposed is formed through a first etching process on a portion of the light emitting structure layer 120. The first etching process includes dry etching, wherein the dry etching includes at least one of Inductively Coupled Plasma (ICP) equipment, Reactive Ion Etching (RIE) equipment, Capacitive Coupled Plasma (CCP) equipment, and Electron Cyclotron Resonance (ECR) equipment. It includes one. Another etching method may further include, but is not limited to, wet etching.

An open area A1 of the light emitting structure layer 120 may be formed, and the first conductive semiconductor layer 117 may be exposed, and an exposed portion of the first conductive semiconductor layer 117 may be formed in the active layer ( It may be formed at a height lower than the upper surface of the (119).

The open area A1 of the light emitting structure layer 120 may be an etching area, and may be set to an arbitrary area, and the number of areas A1 may be one or plural.

An insulating layer 161 may be formed on the sidewall 21 exposed to the open area A1 of the light emitting structure layer 120, and the insulating layer 161 may be formed to a part of the upper surface of the electrode layer 131. It is not limited thereto. The insulating layer 161 may be formed using a sputtering method or a deposition method. The insulating layer 161 may include an insulating material or an insulating resin such as oxides, nitrides, fluorides, sulfides, and the like of Al, Cr, Si, Ti, Zn, and Zr. The insulating layer 161 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The insulating layer 161 may be formed as a single layer or a multilayer, but is not limited thereto.

Referring to FIG. 14, a first electrode 141 is formed on the first conductive semiconductor layer 117 disposed in the open area A1, and a second electrode 151 is formed on the electrode layer 131. Done. The first electrode 141 and the second electrode 151 may be formed by sputtering and / or deposition equipment after masking a region other than the electrode formation region with a mask, but are not limited thereto. The first electrode 141 and the second electrode 151 are Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, W, La, Ta, Ti And optionally alloys thereof. The first electrode 141 and the second electrode 151 may be formed in multiple layers, and may include, for example, at least two layers of an adhesive layer / reflection layer / diffusion prevention layer / bonding layer using the above materials. The first electrode 141 and the second electrode 151 may be formed in the same stacked structure in the same process, but is not limited thereto.

The discharge part 152 of the second electrode 151 is formed on the insulating layer 161. Here, after forming the first electrode 141, the insulating layer 161 may be formed, which corresponds to the discharge part 152 of the first electrode 141 and the second electrode 151. You can change it as much as possible. Alternatively, the formation order of the insulating layer 161 and the first electrode 141 may be changed.

The insulating layer 161 is etched through a second etching process. The second etching process includes dry etching.

In the etching process of the insulating layer 161, etching is performed from the side surface 22 adjacent to the first electrode 141. The thickness of a portion or the entire area of the insulating layer 161 is increased by the etching process. Thinner. Accordingly, as illustrated in FIG. 15, the discharge part 152 of the second electrode 151 may protrude more than the side surface of the insulating layer 161 and may be in spatial contact with the first electrode 141. In this case, in order to overlap the discharge part 152 of the first electrode 141 and the second electrode 151, the insulating layer 161 is further formed on the first electrode 141. The discharge part 152 of the second electrode 151 may be formed and then etched through a second etching process. Through this process, a copper 25 may be formed between the discharge unit 152 of the first electrode 141 and the second electrode 151, and the pupil 25 may have an electrostatic discharge function. .

16 is a perspective view of a light emitting device package having the light emitting device, and FIG. 17 is a side cross-sectional view of the light emitting device of FIG.

16 and 17, the light emitting device package 600 includes a body 610 having a recess 660, a first lead frame 621 having a first cavity 625, and a second cavity 635. The second lead frame 631, the connection frame 646, the light emitting devices 671 and 672, the connection members 603 to 606, the molding member 651, and the paste members 681 and 682 may be included. For the description of the embodiment, the light emitting device package 600 may have a length of 3mm-12mm in the first direction, 3mm-12mm in the second direction orthogonal to the first direction, and a thickness of 800㎛. For example, a configuration in which a plurality of light emitting devices 671 and 672 are disposed will be described as an example, but is not limited thereto.

The body 610 may include at least one of insulation, acceleration, or a metallic material. The body 610 may include at least one of a resin material such as polyphthalamide (PPA), silicon (Si), a metal material, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and a printed circuit board (PCB). It can be formed as one. For example, the body 610 may be made of a resin material such as polyphthalamide (PPA).

As another example, when the body 610 is formed of a conductive material, an insulating film (not shown) is further formed on the surface of the body 610 to electrically short the conductive body 610 with another lead frame. Can be prevented.

The shape of the body 610 may be formed in a shape having a triangle, a square, a polygon, a circle, or a curved surface when viewed from above. The body 610 may include a plurality of side parts 611 ˜ 614, and at least one of the plurality of side parts 611 ˜ 614 may be disposed perpendicularly or inclined with respect to a bottom surface of the body 610. The body 610 describes the first to fourth side parts 611 to 614 as an example, and the first side part 611 and the second side part 612 are opposite sides, and the third side part 613 and the third side part 613 are different from each other. The fourth side portions 614 are opposite sides. The length of each of the first side portion 611 and the second side portion 612 may be different from that of the third side portion 613 and the fourth side portion 614. For example, the first side portion 611 and the second side portion 612 may be different from each other. The length of the side portion 612 (eg, a short side length) may be shorter than the length of the third side portion 613 and the fourth side portion 614. The length of the first side portion 611 or the second side portion 612 may be a distance between the third side portion 613 and the fourth side portion 614, the length direction of the second and third cavities ( 625, 635 may be a direction passing through the center.

The first lead frame 621 and the second lead frame 631 may be disposed on a lower surface of the body 610 to be mounted on a circuit board. As another example, the first lead frame 621 and the second lead frame 631 may be disposed on one side of the body 610 to be mounted on a circuit board. The thickness of the first lead frame 621 and the second lead frame 631 may be formed to 0.2mm ± 0.05 mm. The first and second lead frames 621 and 631 serve as leads for supplying power.

The body 610 includes a concave portion 660, and the concave portion 660 is open at an upper portion thereof and includes a side and a bottom 616. The concave portion 660 may be formed in a shape such as a cup structure, a cavity structure, or a recess structure concave from the upper surface 615 of the body 610, but is not limited thereto. The side of recess 660 may be perpendicular or inclined with respect to its bottom 616. The shape of the concave portion 660 as viewed from above may be circular, elliptical, polygonal (eg, rectangular), or polygonal with corners curved.

The first lead frame 621 is disposed below the first region of the recess 660, and a part of the first lead frame 621 is disposed at the bottom 616 of the recess 660 and at the center thereof. A concave first cavity 625 is disposed to have a lower depth than the bottom 616. The first cavity 625 has a concave shape from the bottom 616 of the concave portion 660 toward the bottom surface of the body 610, for example, a cup structure or a recess shape.

Side and bottom 622 of the first cavity 625 is formed by the first lead frame 621, the peripheral side of the first cavity 625 is the bottom 622 of the first cavity 625. Can be beveled or bent vertically). Two opposite sides of the side surface of the first cavity 625 may be inclined at the same angle or inclined at different angles.

The second lead frame 631 is disposed in a second region spaced apart from the first region of the recess 660, and a part of the second lead frame 631 is disposed at the bottom 616 of the recess 660, and the center of the second lead frame 631 is disposed at the center of the recess 660. The second cavity 635 is formed to have a lower depth than the bottom 616 of the recess 660. The second cavity 635 includes a concave shape, for example, a cup structure or a recess shape, in the direction of the bottom surface of the body 610 from the top surface of the second lead frame 631. The bottom 632 and side surfaces of the second cavity 635 are formed by the second lead frame 631, and the side surface of the second cavity 635 is the bottom 632 of the second cavity 635. It can be bent from or bent vertically from. Two opposite sides of the side surface of the second cavity 635 may be inclined at the same angle or inclined at different angles.

When viewed from above, the first cavity 625 and the second cavity 635 may be formed in the same shape or symmetric with each other, but is not limited thereto.

Each of the central portions of the first lead frame 621 and the second lead frame 631 may be exposed to the lower portion of the body 610, and may be disposed on the same plane or a different plane as a lower surface of the body 610. have.

The first lead frame 621 includes a first lead portion 623, and the first lead portion 623 is disposed under the body 610 and the third side portion 613 of the body 610. Can protrude. The second lead frame 631 includes a second lead part 633, and the second lead part 633 is disposed under the body 610, and the third side part 613 of the body 610. Protrude to the fourth side portion 614 on the opposite side.

The first lead frame 621, the second lead frame 631, and the connection frame 646 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), It may include at least one of chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed in a single layer or multiple layers. The first and second lead frames 621 and 631 may have the same thickness, but the thickness of the first and second lead frames 621 and 631 is not limited thereto.

The bottom shape of the first cavity 625 and the second cavity 635 may be a circle or ellipse having a rectangle, a regular rectangle or a curved surface.

A connection frame 646 is disposed on the bottom 616 of the concave portion 660, and the connection frame 646 is disposed between the first lead frame 621 and the second lead frame 631. Used as a connection terminal. The connection frame 646 may be removed. When the connection frame 646 is removed, the first and second light emitting devices 671 and 672 may be connected to the first lead frame 621 and the second lead frame 631. Can be electrically connected.

The first light emitting device 671 is disposed in the first cavity 625 of the first lead frame 621, and the second light emitting device (2) is located in the second cavity 635 of the second lead frame 631. 672 may be disposed.

The first and second light emitting devices 671 and 672 may selectively emit light in a range of visible light to ultraviolet light, for example, among red LED chips, blue LED chips, green LED chips, and yellow green LED chips. Can be selected. The first and second light emitting devices 671 and 672 include a compound semiconductor light emitting device of a group II-VI element or a group III-V element.

The first light emitting device 671 is connected to the first connection frame 621 and the connection frame 646 by connecting members 603 and 604. The second light emitting element 672 is connected to the second connecting frame 631 and the connecting frame 646 by connecting members 605 and 606. The connection members 603-606 may be implemented by wires.

The protection element may be disposed on a portion of the first lead frame 621 or the second lead frame 631. The protection device may be implemented with a thyristor, a zener diode, or a transient voltage suppression (TVS), and the zener diode protects the light emitting device from electro static discharge (ESD). The protection device may be connected to the connection circuits of the first light emitting device 671 and the second light emitting device 672 in parallel to protect the light emitting devices 671 and 672.

A molding member 651 may be formed in the recess 660, the first cavity 625, and the second cavity 635. The molding member 651 may include a translucent resin material such as silicon or epoxy, and may be formed in a single layer or multiple layers.

The first paste member 681 is disposed between the first light emitting element 671 and the bottom 622 of the first cavity 625 to bond and electrically connect each other. The second paste member 682 is disposed between the second light emitting element 672 and the bottom 632 of the second cavity 635 to bond and electrically connect each other.

The first and second paste members 681,682 comprise an insulating adhesive, for example epoxy. In addition, the epoxy may include a filler, but is not limited thereto.

The molding member 651 may include a phosphor for converting a wavelength of light emitted onto the light emitting devices 671 and 672, wherein the phosphor is one of the first cavity 625 and the second cavity 635. It may be added to the molding member 651 formed in one or all areas, but is not limited thereto. The phosphor excites a part of light emitted from the light emitting devices 671 and 672 to emit light of different wavelengths. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 651 may be formed in a flat shape, concave shape, convex shape, and the like, for example, the surface of the molding member 651 may be formed in a concave curved surface, the concave curved surface is light It can be an exit surface.

The circumference of the recess 660 may be formed to be inclined with respect to the bottom 616 of the recess 660. The circumference of the recess 660 may be formed in a stepped structure to prevent the molding member 651 from overflowing.

The upper surface of the molding member 651 may be formed as a concave, convex or flat surface. In addition, the upper surface of the molding member 651 may be formed of a rough uneven surface, but is not limited thereto.

A fluorescent sheet may be disposed on the light emitting device 600, or a phosphor layer may be coated on each of the light emitting devices 671 and 672. This is an example for blocking the disappearance of the pupil of the light emitting device of FIG.

Although the package of the embodiment is illustrated and described in the form of a top view, it is implemented in a side view to improve the heat dissipation, conductivity, and reflection characteristics as described above. After packaging, the lens may be formed or adhered to the resin layer, but is not limited thereto.

<Lighting system>

The light emitting device or the light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and includes a display device shown in FIGS. 18 and 19 and a lighting device shown in FIG. 20. Etc. may be included.

18 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 18, the display device 1000 according to the exemplary embodiment includes a light guide plate 1041, a light emitting module 1031 providing light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as PMMA (polymethyl methacrylate), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. &Lt; / RTI &gt;

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a substrate 1033 and a light emitting device package 30 according to the above-described embodiment, and the light emitting device packages 1035 and 30 are disposed on the substrate 1033 at predetermined intervals. Can be arrayed.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 1035 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the substrate 1033 may be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 1035 may be mounted on the substrate 1033 such that the light emitting surface of the light emitting device package 1035 is spaced apart from the light guiding plate 1041 by a predetermined distance. The light emitting device package 1035 may directly or indirectly provide light to the light-incident portion on one side of the light guide plate 1041, but the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

19 is a diagram illustrating a display device according to an exemplary embodiment.

Referring to FIG. 19, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 1124 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 1124 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit 1150.

The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

The optical member 1154 is disposed on the light emitting module 1060, and performs surface light source, diffusion, condensing, etc. of the light emitted from the light emitting module 1060.

20 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 20, the lighting device 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 1534 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 1534 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator. For example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, FR-4 substrates and the like.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 1534 may be mounted on the substrate 1532. Each of the light emitting device packages 1534 may include at least one light emitting diode (LED) chip. The LED chip may include a light emitting diode in a visible light band such as red, green, blue, or white, or a UV light emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 1534 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

The embodiment may be implemented as a light emitting module by arranging a package in which a light emitting device is packaged on the substrate, or may be implemented as a light emitting module by arranging and packaging a light emitting device as shown in FIG.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

100 light emitting element 111 substrate
113: buffer layer 115: low conductive layer
117,217: first conductive semiconductor layer 119,219: active layer
121,221: cladding layer 123,223: second conductive semiconductor layer
131: electrode layer 141, 142, 143, 241: first electrode
151,270: second electrode 152,153,155,156,157,144,243: discharge part
161,163,164,261: insulation layer

Claims (16)

A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode electrically connected to the first conductive semiconductor layer; And
A second electrode electrically connected to the second conductive semiconductor layer;
The second electrode includes a discharge part corresponding to the first electrode,
And a pupil for spatially matching the discharge portion of the second electrode and the first electrode. A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
A first electrode electrically connected to the first conductive semiconductor layer; And
A second electrode electrically connected to the second conductive semiconductor layer;
A portion of the upper surface of the first conductive semiconductor layer is opened,
The second electrode may include a discharge part corresponding to a portion of an upper surface of the first conductive semiconductor layer.
And a pupil for spatially matching the discharge portion of the second electrode with a portion of the upper surface of the first conductive semiconductor layer. The light emitting device of claim 1 or 2, further comprising a transparent electrode layer or a reflective electrode layer between the second conductive semiconductor layer and the second electrode. The light emitting device of claim 3, wherein the pupil height is in a range of 100 nm to 10 μm. The light emitting device of claim 3, wherein the pupil comprises air or sulfur hexafluoride (SF6). The light emitting device of claim 3, wherein the first electrode is disposed on a portion of an upper surface of the first conductive semiconductor layer, and the discharge portion of the second electrode protrudes outward from a sidewall of the light emitting structure layer to correspond to the first electrode. Light emitting device. The light emitting device of claim 1, wherein a plurality of discharge parts of the second electrode correspond to the first electrode in different regions of the light emitting structure layer. The light emitting device of claim 3, further comprising an insulating layer disposed between the discharge portion of the second electrode and the first conductive semiconductor layer. The light emitting device of claim 8, wherein the discharge portion of the second electrode protrudes outward from a side surface of the insulating layer. The light emitting device of claim 9, wherein the discharge portion of the second electrode protrudes from a side surface of the insulating layer in a length ranging from 100 nm to 2000 μm. 4. The discharge device of claim 3, wherein the first electrode is disposed outside the discharge portion of the second electrode and a portion of an upper surface of the first conductive semiconductor layer, and the discharge portion of the second electrode is disposed on the surface of the first electrode. Light emitting device comprising an insulating layer to block the interference. The light emitting device of claim 1 or 2, wherein the first electrode is disposed in a center area spaced apart from the outside of the light emitting structure layer to correspond to the discharge portion of the second electrode. The semiconductor device of claim 1, further comprising: at least one recess in the light emitting structure layer and formed from the second conductive semiconductor layer to a part of the first conductive semiconductor layer; An insulating layer disposed on the circumference of the recess and on the second conductive semiconductor layer,
The first electrode includes a contact portion disposed in the concave portion, and a discharge portion corresponding to the discharge portion of the second electrode on the insulating layer. The light emitting device of claim 1, further comprising a substrate disposed under the first conductive semiconductor layer. The semiconductor device of claim 14, further comprising a recess disposed in a portion of the substrate and the first conductive semiconductor layer.
The first electrode may include a contact portion contacting the bottom of the first conductive semiconductor layer through the recess portion; And a discharge part disposed on the sidewall of the substrate and corresponding to the discharge part of the second electrode from the contact part. The semiconductor device of claim 1, wherein the second electrode comprises an ohmic contact layer disposed on the second conductive semiconductor layer, a reflective layer disposed on the ohmic contact layer, and a bonding layer disposed on the reflective layer.
And at least one of the ohmic contact layer, the reflective layer, and the bonding layer includes the discharge part corresponding to the first electrode.

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